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SDT10A100P5-13 DIODES INCORPORATED SDT10A100P5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Leakage current: 20mA
Max. forward voltage: 0.68V
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 0.24kA
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MUR120-T DIODES INCORPORATED ds30178.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 35A; DO41; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 25ns
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DMN2710UT-7 DMN2710UT-7 DIODES INCORPORATED DMN2710UT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT523
Polarisation: unipolar
Gate charge: 0.6nC
Kind of channel: enhancement
Power dissipation: 0.52W
On-state resistance: 0.75Ω
Drain current: 0.7A
Pulsed drain current: 5.6A
Gate-source voltage: ±6V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
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DMN3010LFG-13 DIODES INCORPORATED DMN3010LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Polarisation: unipolar
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 37nC
On-state resistance: 10.5mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMN3010LFG-7 DIODES INCORPORATED DMN3010LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Polarisation: unipolar
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 37nC
On-state resistance: 10.5mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMT35M4LFDF-7 DIODES INCORPORATED DMT35M4LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 90A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 14.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BAV99Q-7-F DIODES INCORPORATED BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAV99-13-F BAV99-13-F DIODES INCORPORATED BAV99.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
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AS431HANTR-G1 AS431HANTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 2967 шт:
термін постачання 21-30 дні (днів)
32+13.77 грн
40+10.07 грн
46+8.87 грн
54+7.43 грн
100+6.07 грн
250+5.59 грн
500+5.28 грн
Мінімальне замовлення: 32
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AS431HMBNTR-G1 AS431HMBNTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
на замовлення 1910 шт:
термін постачання 21-30 дні (днів)
27+16.35 грн
33+12.31 грн
38+10.71 грн
45+9.03 грн
100+7.27 грн
250+6.63 грн
500+6.23 грн
Мінімальне замовлення: 27
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AS431BZTR-E1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: Ammo Pack
Maximum output current: 0.1A
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AS431ANTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BNTR-E1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431HMANTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431AKTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431ANTR-E1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431ARTR-E1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431AZTR-E1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431AZTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BKTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BNTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BRTR-E1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BRTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BZTR-G1 DIODES INCORPORATED AS431.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: Ammo Pack
Maximum output current: 0.1A
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AS431HAZTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431HBNTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431HBZTR-G1 DIODES INCORPORATED AS431H.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: Ammo Pack
Maximum output current: 0.1A
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AS431IANTR-G1 DIODES INCORPORATED AS431I.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431IAZTR-G1 DIODES INCORPORATED AS431I.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431IBNTR-G1 DIODES INCORPORATED AS431I.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431IBRTR-G1 DIODES INCORPORATED AS431I.pdf Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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ZTX851STZ DIODES INCORPORATED ZTX851.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.2W
Case: TO92
Current gain: 25...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 130MHz
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FZT956TA FZT956TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=E1FC156684ACC4F1A303005056AB0C4F&compId=FZT9556.pdf?ci_sign=c067c9625cffe9c89deda90f074fb9a4781106da Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
на замовлення 456 шт:
термін постачання 21-30 дні (днів)
5+96.40 грн
10+56.35 грн
100+35.17 грн
250+33.33 грн
Мінімальне замовлення: 5
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FZT956QTA DIODES INCORPORATED FZT956.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 110MHz
Pulsed collector current: 5A
Current gain: 10...300
Application: automotive industry
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ZXTD2090E6TA DIODES INCORPORATED Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 1.7W
Case: SOT26
Pulsed collector current: 2A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 215MHz
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DMN2028UFDF-7 DIODES INCORPORATED DMN2028UFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMAJ14CA-13-F SMAJ14CA-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3535 шт:
термін постачання 21-30 дні (днів)
30+14.63 грн
36+11.35 грн
43+9.35 грн
100+4.44 грн
Мінімальне замовлення: 30
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BCP55TA BCP55TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BD9B26063B93D1&compId=BCP54_55_56.pdf?ci_sign=66bdad1e68e52d13d809cbbbb1660d4a6af0e046 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
17+25.82 грн
32+12.71 грн
Мінімальне замовлення: 17
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AP22913CN4-7 DIODES INCORPORATED AP22913.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: X1-WLB0909-4
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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MMDT3946Q-7R DIODES INCORPORATED MMDT3946Q.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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BAS40-06Q-7-F BAS40-06Q-7-F DIODES INCORPORATED BAS40_-04_-05_-06.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Application: automotive industry
Reverse recovery time: 5ns
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BAS40-06Q-13-F BAS40-06Q-13-F DIODES INCORPORATED Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Application: automotive industry
Reverse recovery time: 5ns
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BAS40-06T-7-F BAS40-06T-7-F DIODES INCORPORATED BAS40T_-04T_-05T_-06T.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Reverse recovery time: 5ns
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MMBTA06-7-F MMBTA06-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE996BF73E184E9F8BF&compId=MMBTA05_06.pdf?ci_sign=0d4cdefb1e6991c001427b5eb4ad8e4960eb1f18 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 3031 шт:
термін постачання 21-30 дні (днів)
39+11.19 грн
53+7.67 грн
80+5.00 грн
100+4.13 грн
500+2.73 грн
1000+2.33 грн
1500+2.15 грн
3000+1.89 грн
Мінімальне замовлення: 39
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AP2552AW6-7 AP2552AW6-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED8839727D5E0D30A18&compId=AP255x.pdf?ci_sign=548c7692904889236f1e909fa7e34cbf6a357229 Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Type of integrated circuit: power switch
Case: SOT26
On-state resistance: 135mΩ
Number of channels: 1
Output current: 2.1A
Supply voltage: 2.7...5.5V DC
на замовлення 1336 шт:
термін постачання 21-30 дні (днів)
18+24.10 грн
22+18.86 грн
24+16.78 грн
28+14.39 грн
100+12.71 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
ZXMC4559DN8TA ZXMC4559DN8TA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C30D27D74C4749&compId=ZXMC4559DN8.pdf?ci_sign=6dc7814dd543b44b19b056e7ec5289c548167779 Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 3.6/-2.6A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 137 шт:
термін постачання 21-30 дні (днів)
4+111.04 грн
10+69.62 грн
25+57.63 грн
100+44.04 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ZXMC4559DN8TC ZXMC4559DN8TC DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B8234F04D71BF&compId=ZXMC4559DN8TC.pdf?ci_sign=dcb7aeca60d7c533da77278259cf0e804d2aa21e Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 3.9/-4.7A
Power dissipation: 2.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.055/0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FZT690BTA FZT690BTA DIODES INCORPORATED FZT690B.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 659 шт:
термін постачання 21-30 дні (днів)
7+61.97 грн
10+43.48 грн
50+33.57 грн
100+29.97 грн
250+26.06 грн
500+23.58 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DXT690BP5-13 DIODES INCORPORATED ds31801.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Type of transistor: NPN
Case: PowerDI®5
Kind of package: reel; tape
Mounting: SMD
Collector current: 3A
Pulsed collector current: 6A
Power dissipation: 3.2W
Collector-emitter voltage: 45V
Current gain: 60...700
Quantity in set/package: 5000pcs.
Frequency: 150MHz
Polarisation: bipolar
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DXT690BP5Q-13 DIODES INCORPORATED ds31801.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Type of transistor: NPN
Case: PowerDI®5
Kind of package: reel; tape
Mounting: SMD
Collector current: 3A
Pulsed collector current: 6A
Power dissipation: 3.2W
Collector-emitter voltage: 45V
Current gain: 60...700
Quantity in set/package: 5000pcs.
Application: automotive industry
Frequency: 150MHz
Polarisation: bipolar
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DF02S-T DF02S-T DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED8469D2A7DEA18&compId=DF005_10S.pdf?ci_sign=30eda941a5f999695fd9671432c1e265c8f7bd8f Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 200V
Load current: 1A
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: DFS
Max. forward voltage: 1.1V
Electrical mounting: SMT
Type of bridge rectifier: single-phase
на замовлення 869 шт:
термін постачання 21-30 дні (днів)
12+38.73 грн
16+25.02 грн
100+14.47 грн
500+10.55 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SBRT15U50SP5-13 DIODES INCORPORATED SBRT15U50SP5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 290A
Kind of package: reel; tape
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SBRT15U50SP5-13D DIODES INCORPORATED SBRT15U50SP5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Leakage current: 170µA
Max. forward impulse current: 290A
Kind of package: reel; tape
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SBRT15U50SP5-7 DIODES INCORPORATED SBRT15U50SP5.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Leakage current: 170µA
Max. forward impulse current: 290A
Kind of package: reel; tape
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DMP2200UFCL-7 DIODES INCORPORATED DMP2200UFCL.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
Pulsed drain current: -8A
Power dissipation: 1.58W
Case: U-DFN1616-6
Gate-source voltage: ±8V
On-state resistance: 0.65Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BAS521-7 BAS521-7 DIODES INCORPORATED ds32175.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 50ns; SOD523; Ufmax: 1.1V
Mounting: SMD
Reverse recovery time: 50ns
Case: SOD523
Kind of package: reel; tape
Load current: 0.25A
Features of semiconductor devices: small signal
Max. forward voltage: 1.1V
Semiconductor structure: single diode
Max. off-state voltage: 300V
Type of diode: switching
на замовлення 1580 шт:
термін постачання 21-30 дні (днів)
42+10.33 грн
59+6.87 грн
75+5.34 грн
100+4.76 грн
250+4.08 грн
500+3.62 грн
1000+3.50 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
BAS521Q-13 DIODES INCORPORATED BAS521Q.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 50ns; SOD523; Ufmax: 1.1V
Mounting: SMD
Reverse recovery time: 50ns
Case: SOD523
Kind of package: reel; tape
Load current: 0.25A
Features of semiconductor devices: small signal
Max. forward voltage: 1.1V
Semiconductor structure: single diode
Max. off-state voltage: 300V
Type of diode: switching
Application: automotive industry
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BAS521LP-7 DIODES INCORPORATED BAS521LP.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 325V; 0.4A; 50ns; X1-DFN1006-2; Ufmax: 1.1V
Mounting: SMD
Reverse recovery time: 50ns
Case: X1-DFN1006-2
Kind of package: reel; tape
Load current: 0.4A
Max. forward impulse current: 3A
Features of semiconductor devices: small signal
Max. forward voltage: 1.1V
Semiconductor structure: single diode
Max. off-state voltage: 325V
Type of diode: switching
Capacitance: 5pF
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AP7341-25FS4-7 DIODES INCORPORATED AP7341.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; X2DFN4; SMD
Kind of voltage regulator: fixed; LDO; linear
Integrated circuit features: shutdown mode control input
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: X2DFN4
Operating temperature: -40...85°C
Output current: 0.3A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±1.5%
Input voltage: 1.7...5.25V
Output voltage: 2.5V
Manufacturer series: AP7341
Kind of package: reel; tape
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GBU401 GBU401 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D71195BF740D2&compId=GBU4_ser.pdf?ci_sign=0398007d0535d95d97c2eba676c71bae9770bb88 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A
Max. off-state voltage: 100V
Case: GBU
Kind of package: tube
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 4A
Max. forward impulse current: 150A
Leads: flat pin
Features of semiconductor devices: glass passivated
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SDT10A100P5-13 SDT10A100P5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 100V; 10A; reel,tape
Case: PowerDI®5
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Leakage current: 20mA
Max. forward voltage: 0.68V
Max. off-state voltage: 100V
Load current: 10A
Max. forward impulse current: 0.24kA
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MUR120-T ds30178.pdf
Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; reel,tape; Ifsm: 35A; DO41; 25ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward impulse current: 35A
Case: DO41
Reverse recovery time: 25ns
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DMN2710UT-7 DMN2710UT.pdf
DMN2710UT-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 5.6A; 520mW; SOT523
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT523
Polarisation: unipolar
Gate charge: 0.6nC
Kind of channel: enhancement
Power dissipation: 0.52W
On-state resistance: 0.75Ω
Drain current: 0.7A
Pulsed drain current: 5.6A
Gate-source voltage: ±6V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
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DMN3010LFG-13 DMN3010LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Polarisation: unipolar
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 37nC
On-state resistance: 10.5mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
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DMN3010LFG-7 DMN3010LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 2.4W
Polarisation: unipolar
Case: PowerDI3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Pulsed drain current: 90A
Drain current: 11A
Drain-source voltage: 30V
Gate charge: 37nC
On-state resistance: 10.5mΩ
Power dissipation: 2.4W
Gate-source voltage: ±20V
Kind of package: 7 inch reel; tape
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DMT35M4LFDF-7 DMT35M4LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 90A; 1.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 90A
Power dissipation: 1.7W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 14.9nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BAV99Q-7-F BAV99.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: small signal
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BAV99-13-F BAV99.pdf
BAV99-13-F
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 0.3A; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.3A
Reverse recovery time: 4ns
Semiconductor structure: double series
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Kind of package: reel; tape
Features of semiconductor devices: small signal
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AS431HANTR-G1 AS431H.pdf
AS431HANTR-G1
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±0.5%; SOT23; reel,tape
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±0.5%
Mounting: SMD
Case: SOT23
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: reel; tape
Maximum output current: 0.1A
на замовлення 2967 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.77 грн
40+10.07 грн
46+8.87 грн
54+7.43 грн
100+6.07 грн
250+5.59 грн
500+5.28 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
AS431HMBNTR-G1 AS431H.pdf
AS431HMBNTR-G1
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
на замовлення 1910 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+16.35 грн
33+12.31 грн
38+10.71 грн
45+9.03 грн
100+7.27 грн
250+6.63 грн
500+6.23 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
AS431BZTR-E1 AS431.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: Ammo Pack
Maximum output current: 0.1A
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AS431ANTR-G1 AS431.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BNTR-E1 AS431.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431HMANTR-G1 AS431H.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431AKTR-G1 AS431.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431ANTR-E1 AS431.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431ARTR-E1 AS431.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431AZTR-E1 AS431.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431AZTR-G1 AS431.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BKTR-G1 AS431.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BNTR-G1 AS431.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BRTR-E1 AS431.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BRTR-G1 AS431.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431BZTR-G1 AS431.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.5V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.5V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: Ammo Pack
Maximum output current: 0.1A
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AS431HAZTR-G1 AS431H.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431HBNTR-G1 AS431H.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431HBZTR-G1 AS431H.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source; 2.495V; ±1%; TO92; Ammo Pack; 100mA
Type of integrated circuit: voltage reference source
Reference voltage: 2.495V
Tolerance: ±1%
Mounting: THT
Case: TO92
Operating temperature: -40...125°C
Operating voltage: 2.5...36V
Kind of package: Ammo Pack
Maximum output current: 0.1A
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AS431IANTR-G1 AS431I.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431IAZTR-G1 AS431I.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431IBNTR-G1 AS431I.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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AS431IBRTR-G1 AS431I.pdf
Виробник: DIODES INCORPORATED
Category: Reference voltage sources - circuits
Description: IC: voltage reference source
Type of integrated circuit: voltage reference source
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ZTX851STZ ZTX851.pdf
Виробник: DIODES INCORPORATED
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 1.2W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 1.2W
Case: TO92
Current gain: 25...300
Mounting: THT
Kind of package: Ammo Pack
Frequency: 130MHz
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FZT956TA pVersion=0046&contRep=ZT&docId=E1FC156684ACC4F1A303005056AB0C4F&compId=FZT9556.pdf?ci_sign=c067c9625cffe9c89deda90f074fb9a4781106da
FZT956TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
на замовлення 456 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+96.40 грн
10+56.35 грн
100+35.17 грн
250+33.33 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
FZT956QTA FZT956.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 200V; 2A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 200V
Collector current: 2A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 110MHz
Pulsed collector current: 5A
Current gain: 10...300
Application: automotive industry
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ZXTD2090E6TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 1A; 1.7W; SOT26
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 1A
Power dissipation: 1.7W
Case: SOT26
Pulsed collector current: 2A
Current gain: 20...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 215MHz
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DMN2028UFDF-7 DMN2028UFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 7.5A; Idm: 40A; 1.31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.5A
Pulsed drain current: 40A
Power dissipation: 1.31W
Case: U-DFN2020-6
Gate-source voltage: ±8V
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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SMAJ14CA-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ14CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3535 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
30+14.63 грн
36+11.35 грн
43+9.35 грн
100+4.44 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
BCP55TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE889BD9B26063B93D1&compId=BCP54_55_56.pdf?ci_sign=66bdad1e68e52d13d809cbbbb1660d4a6af0e046
BCP55TA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1A; 2W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 2W
Case: SOT223
Current gain: 25...250
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
17+25.82 грн
32+12.71 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
AP22913CN4-7 AP22913.pdf
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2A; Ch: 1; P-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side; USB switch
Output current: 2A
Number of channels: 1
Kind of output: P-Channel
Mounting: SMD
Case: X1-WLB0909-4
Kind of package: reel; tape
Supply voltage: 2.7...5.5V DC
Active logical level: high
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MMDT3946Q-7R MMDT3946Q.pdf
Виробник: DIODES INCORPORATED
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 40V; 0.2A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SOT363
Current gain: 30...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 300MHz
Application: automotive industry
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BAS40-06Q-7-F BAS40_-04_-05_-06.pdf
BAS40-06Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Application: automotive industry
Reverse recovery time: 5ns
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BAS40-06Q-13-F
BAS40-06Q-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.35W
Application: automotive industry
Reverse recovery time: 5ns
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BAS40-06T-7-F BAS40T_-04T_-05T_-06T.pdf
BAS40-06T-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT523; SMD; 40V; 0.2A; 5ns; reel,tape
Type of diode: Schottky switching
Case: SOT523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.2A
Semiconductor structure: common anode; double
Capacitance: 5pF
Max. forward voltage: 1V
Leakage current: 0.2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Reverse recovery time: 5ns
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MMBTA06-7-F pVersion=0046&contRep=ZT&docId=005056AB82531EE996BF73E184E9F8BF&compId=MMBTA05_06.pdf?ci_sign=0d4cdefb1e6991c001427b5eb4ad8e4960eb1f18
MMBTA06-7-F
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.5A; 350mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Quantity in set/package: 3000pcs.
на замовлення 3031 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.19 грн
53+7.67 грн
80+5.00 грн
100+4.13 грн
500+2.73 грн
1000+2.33 грн
1500+2.15 грн
3000+1.89 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
AP2552AW6-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED8839727D5E0D30A18&compId=AP255x.pdf?ci_sign=548c7692904889236f1e909fa7e34cbf6a357229
AP2552AW6-7
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; high-side,USB switch; 2.1A; Ch: 1; P-Channel; SMD
Kind of package: reel; tape
Mounting: SMD
Kind of integrated circuit: high-side; USB switch
Active logical level: low
Kind of output: P-Channel
Type of integrated circuit: power switch
Case: SOT26
On-state resistance: 135mΩ
Number of channels: 1
Output current: 2.1A
Supply voltage: 2.7...5.5V DC
на замовлення 1336 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+24.10 грн
22+18.86 грн
24+16.78 грн
28+14.39 грн
100+12.71 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
ZXMC4559DN8TA pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C30D27D74C4749&compId=ZXMC4559DN8.pdf?ci_sign=6dc7814dd543b44b19b056e7ec5289c548167779
ZXMC4559DN8TA
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 3.6/-2.6A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 137 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+111.04 грн
10+69.62 грн
25+57.63 грн
100+44.04 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ZXMC4559DN8TC pVersion=0046&contRep=ZT&docId=005056AB752F1ED6879B8234F04D71BF&compId=ZXMC4559DN8TC.pdf?ci_sign=dcb7aeca60d7c533da77278259cf0e804d2aa21e
ZXMC4559DN8TC
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 60/-60V
Drain current: 3.9/-4.7A
Power dissipation: 2.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.055/0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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FZT690BTA FZT690B.pdf
FZT690BTA
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 3A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
на замовлення 659 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+61.97 грн
10+43.48 грн
50+33.57 грн
100+29.97 грн
250+26.06 грн
500+23.58 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
DXT690BP5-13 ds31801.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Type of transistor: NPN
Case: PowerDI®5
Kind of package: reel; tape
Mounting: SMD
Collector current: 3A
Pulsed collector current: 6A
Power dissipation: 3.2W
Collector-emitter voltage: 45V
Current gain: 60...700
Quantity in set/package: 5000pcs.
Frequency: 150MHz
Polarisation: bipolar
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DXT690BP5Q-13 ds31801.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 3A; 3.2W; PowerDI®5
Type of transistor: NPN
Case: PowerDI®5
Kind of package: reel; tape
Mounting: SMD
Collector current: 3A
Pulsed collector current: 6A
Power dissipation: 3.2W
Collector-emitter voltage: 45V
Current gain: 60...700
Quantity in set/package: 5000pcs.
Application: automotive industry
Frequency: 150MHz
Polarisation: bipolar
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DF02S-T pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED8469D2A7DEA18&compId=DF005_10S.pdf?ci_sign=30eda941a5f999695fd9671432c1e265c8f7bd8f
DF02S-T
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 200V; If: 1A; Ifsm: 50A; DFS
Max. off-state voltage: 200V
Load current: 1A
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
Max. forward impulse current: 50A
Case: DFS
Max. forward voltage: 1.1V
Electrical mounting: SMT
Type of bridge rectifier: single-phase
на замовлення 869 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+38.73 грн
16+25.02 грн
100+14.47 грн
500+10.55 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
SBRT15U50SP5-13 SBRT15U50SP5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Max. forward impulse current: 290A
Kind of package: reel; tape
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SBRT15U50SP5-13D SBRT15U50SP5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Leakage current: 170µA
Max. forward impulse current: 290A
Kind of package: reel; tape
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SBRT15U50SP5-7 SBRT15U50SP5.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; Trench SBR®; SMD; 50V; 15A
Type of diode: Schottky rectifying
Case: PowerDI®5
Technology: Trench SBR®
Mounting: SMD
Max. off-state voltage: 50V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.47V
Leakage current: 170µA
Max. forward impulse current: 290A
Kind of package: reel; tape
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DMP2200UFCL-7 DMP2200UFCL.pdf
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.2A; Idm: -8A; 1.58W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.2A
Pulsed drain current: -8A
Power dissipation: 1.58W
Case: U-DFN1616-6
Gate-source voltage: ±8V
On-state resistance: 0.65Ω
Mounting: SMD
Gate charge: 2.2nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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BAS521-7 ds32175.pdf
BAS521-7
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 50ns; SOD523; Ufmax: 1.1V
Mounting: SMD
Reverse recovery time: 50ns
Case: SOD523
Kind of package: reel; tape
Load current: 0.25A
Features of semiconductor devices: small signal
Max. forward voltage: 1.1V
Semiconductor structure: single diode
Max. off-state voltage: 300V
Type of diode: switching
на замовлення 1580 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
42+10.33 грн
59+6.87 грн
75+5.34 грн
100+4.76 грн
250+4.08 грн
500+3.62 грн
1000+3.50 грн
Мінімальне замовлення: 42
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BAS521Q-13 BAS521Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 300V; 0.25A; 50ns; SOD523; Ufmax: 1.1V
Mounting: SMD
Reverse recovery time: 50ns
Case: SOD523
Kind of package: reel; tape
Load current: 0.25A
Features of semiconductor devices: small signal
Max. forward voltage: 1.1V
Semiconductor structure: single diode
Max. off-state voltage: 300V
Type of diode: switching
Application: automotive industry
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BAS521LP-7 BAS521LP.pdf
Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: switching; SMD; 325V; 0.4A; 50ns; X1-DFN1006-2; Ufmax: 1.1V
Mounting: SMD
Reverse recovery time: 50ns
Case: X1-DFN1006-2
Kind of package: reel; tape
Load current: 0.4A
Max. forward impulse current: 3A
Features of semiconductor devices: small signal
Max. forward voltage: 1.1V
Semiconductor structure: single diode
Max. off-state voltage: 325V
Type of diode: switching
Capacitance: 5pF
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AP7341-25FS4-7 AP7341.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 0.3A; X2DFN4; SMD
Kind of voltage regulator: fixed; LDO; linear
Integrated circuit features: shutdown mode control input
Mounting: SMD
Type of integrated circuit: voltage regulator
Case: X2DFN4
Operating temperature: -40...85°C
Output current: 0.3A
Voltage drop: 0.3V
Number of channels: 1
Tolerance: ±1.5%
Input voltage: 1.7...5.25V
Output voltage: 2.5V
Manufacturer series: AP7341
Kind of package: reel; tape
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GBU401 pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809D71195BF740D2&compId=GBU4_ser.pdf?ci_sign=0398007d0535d95d97c2eba676c71bae9770bb88
GBU401
Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 100V; If: 4A; Ifsm: 150A
Max. off-state voltage: 100V
Case: GBU
Kind of package: tube
Version: flat
Type of bridge rectifier: single-phase
Electrical mounting: THT
Load current: 4A
Max. forward impulse current: 150A
Leads: flat pin
Features of semiconductor devices: glass passivated
товару немає в наявності
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