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AZV393MTR-G1 AZV393MTR-G1 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F41CA496DA9E28&compId=AZV393.pdf?ci_sign=474f0f24e77c2d18c6562a18a25d124dc6d6054b Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; SMT; SO8; reel,tape; 150nA
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Voltage supply range: 2.5...5.5V DC
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
65+6.55 грн
Мінімальне замовлення: 65
В кошику  од. на суму  грн.
AS393AMTR-E1 DIODES INCORPORATED AS393-A.pdf Category: SMD comparators
Description: IC: comparator; precision; Cmp: 2; SMT; SO8; reel,tape; Iio: 200nA
Type of integrated circuit: comparator
Kind of comparator: precision
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 5mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 200nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Input bias current: 0.4µA
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AS393MTR-E1 DIODES INCORPORATED AS393-A.pdf Category: SMD comparators
Description: IC: comparator; precision; Cmp: 2; SMT; SO8; reel,tape; Iio: 200nA
Type of integrated circuit: comparator
Kind of comparator: precision
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 7mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 200nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Input bias current: 0.4µA
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AS393MTR-G1 AS393MTR-G1 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F3F447ACF97E28&compId=AS393x.pdf?ci_sign=bba55b337ec09780594fa5b8568d6b34774d544b Category: SMD comparators
Description: IC: comparator; precision; Cmp: 2; SMT; SO8; reel,tape; 200nA
Type of integrated circuit: comparator
Kind of comparator: precision
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 7mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 200nA
Voltage supply range: ± 1...18V DC; 2...36V DC
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AS358MTR-G1 AS358MTR-G1 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B79C079C6B164143&compId=AS358-358A-358B.pdf?ci_sign=eb1db62d9d0f3d6c05364836e9f10525722211c3 Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SO8; 3÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: 3...36V DC
Kind of package: reel; tape
Power dissipation: 0.55W
Open-loop gain: 100dB
на замовлення 4042 шт:
термін постачання 21-30 дні (днів)
36+11.91 грн
43+9.32 грн
49+8.14 грн
58+6.86 грн
100+5.47 грн
250+4.90 грн
339+2.74 грн
930+2.59 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
AS358MTR-E1 DIODES INCORPORATED AS358-358A-358B.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SO8; 3÷36VDC; reel,tape; IB: 0.2uA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: 3...36V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
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ZTX603 DIODES INCORPORATED ZTX602.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
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ZTX605STZ DIODES INCORPORATED ZTX604.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 150MHz
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ZTX603STZ DIODES INCORPORATED ZTX602.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 250MHz
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BAT54T-7-F BAT54T-7-F DIODES INCORPORATED BAT54T_AT_CT_ST.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.15W
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
39+11.06 грн
54+7.42 грн
100+5.20 грн
250+4.53 грн
274+3.39 грн
753+3.21 грн
3000+3.13 грн
Мінімальне замовлення: 39
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BAT54TA BAT54TA DIODES INCORPORATED bat54srs.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.15W
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BAT54TQ-7-F BAT54TQ-7-F DIODES INCORPORATED BAT54TQ-STQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
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BAT54TWQ-7-F BAT54TWQ-7-F DIODES INCORPORATED BAT54SDWQ-TWQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: triple independent
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
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AP7383-18WR-7 AP7383-18WR-7 DIODES INCORPORATED AP7383.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Output current: 0.15A
Output voltage: 1.8V
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Input voltage: 3.5...30V
Manufacturer series: AP7383
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AP7383-18FDC-7 DIODES INCORPORATED AP7383.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.05A; uDFN6; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Output current: 50mA
Output voltage: 1.8V
Case: uDFN6
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Input voltage: 3.5...30V
Manufacturer series: AP7383
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AP7383-18W5-7 DIODES INCORPORATED AP7383.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Integrated circuit features: shutdown mode control input
Mounting: SMD
Output current: 0.15A
Output voltage: 1.8V
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Input voltage: 3.5...30V
Manufacturer series: AP7383
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AP7383-18WW-7 AP7383-18WW-7 DIODES INCORPORATED AP7383.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.05A; SOT25; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Output current: 50mA
Output voltage: 1.8V
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Input voltage: 3.5...30V
Manufacturer series: AP7383
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AP7383-18Y-13 AP7383-18Y-13 DIODES INCORPORATED AP7383.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Output current: 0.15A
Output voltage: 1.8V
Case: SOT89
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Input voltage: 3.5...30V
Manufacturer series: AP7383
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DMP3036SFV-7 DMP3036SFV-7 DIODES INCORPORATED DMP3036SFV.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -7A
Gate charge: 16.5nC
On-state resistance: 29mΩ
Power dissipation: 2.3W
Gate-source voltage: ±25V
Kind of package: 7 inch reel; tape
на замовлення 1969 шт:
термін постачання 21-30 дні (днів)
9+48.48 грн
12+34.52 грн
62+15.09 грн
169+14.30 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
ZXTN25015DFHTA DIODES INCORPORATED ZXTN25015DFH.pdf Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+20.16 грн
Мінімальне замовлення: 3000
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ZXTP25012EFHTA DIODES INCORPORATED ZXTP25012EFH.pdf Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
3000+20.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMN10H220LE-13 DIODES INCORPORATED DMN10H220LE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 8.3nC
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ZXTD619MCTA DIODES INCORPORATED ZXTD619MC.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 4A; 2.45W; DFN3020B-8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 4A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 40...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...165MHz
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FZT951TA FZT951TA DIODES INCORPORATED FZT951_FZT953.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Power dissipation: 3W
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
9+52.74 грн
10+41.31 грн
25+36.25 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FCX790ATA FCX790ATA DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C5610F53C86749&compId=FCX790A.pdf?ci_sign=3c605a9ae92b687525150bb4becf48c7b9a8674f Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 2A
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Power dissipation: 1W
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
8+56.14 грн
10+40.91 грн
12+35.31 грн
Мінімальне замовлення: 8
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FCX555TA FCX555TA DIODES INCORPORATED FCX555.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 700mA; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.7A
Case: SOT89
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 936 шт:
термін постачання 21-30 дні (днів)
8+55.29 грн
13+32.22 грн
50+24.25 грн
70+13.35 грн
192+12.64 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FZT949TA FZT949TA DIODES INCORPORATED FZT949.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5.5A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 5.5A
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Power dissipation: 3W
на замовлення 157 шт:
термін постачання 21-30 дні (днів)
5+105.47 грн
10+57.58 грн
28+33.65 грн
76+31.83 грн
Мінімальне замовлення: 5
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BAT54LP-7 BAT54LP-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983E731098CB34143&compId=BAT54LP.pdf?ci_sign=e935419e32d10145da12ed6f57f2facde4c361fc Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN2; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.25W
Reverse recovery time: 5ns
Capacitance: 10pF
на замовлення 838 шт:
термін постачання 21-30 дні (днів)
23+18.71 грн
29+13.90 грн
33+12.16 грн
100+7.16 грн
338+2.75 грн
Мінімальне замовлення: 23
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BAT54LPS-7 DIODES INCORPORATED BAT54LPS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X2-DFN1006-2; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky rectifying
Case: X2-DFN1006-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.25V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.65W
Leakage current: 2µA
Reverse recovery time: 5ns
Capacitance: 10pF
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BAT54LP-7B DIODES INCORPORATED BAT54LP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.25W
Leakage current: 2µA
Reverse recovery time: 5ns
Capacitance: 10pF
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BAT54LPQ-7 DIODES INCORPORATED BAT54LPQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.25W
Leakage current: 2µA
Reverse recovery time: 5ns
Capacitance: 10pF
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SB140-T DIODES INCORPORATED ds23022.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
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TT8M_HF DIODES INCORPORATED TT8M_LS.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)
1500+13.01 грн
Мінімальне замовлення: 1500
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SB180-T DIODES INCORPORATED ds30116.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 1A; DO41; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.8V
Max. forward impulse current: 25A
Capacitance: 80pF
Kind of package: reel; tape
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DMC4050SSDQ-13 DIODES INCORPORATED DMC4050SSDQ_Web.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 5.8/-5.8A
Power dissipation: 2.14W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
Mounting: SMD
Gate charge: 37.56/33.66nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN4008LFG-13 DIODES INCORPORATED DMN4008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 15.4A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
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DMN4008LFG-7 DIODES INCORPORATED DMN4008LFG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 15.4A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
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DMT4008LFV-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 17.1nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Drain current: 9.7A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 70A
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DMTH4008LFDFW-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
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DMTH4008LPS-13 DIODES INCORPORATED DMTH4008LPS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 13mΩ
Power dissipation: 2.99W
Drain current: 10.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 110A
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DMTH4008LFDFWQ-13 DIODES INCORPORATED DMTH4008LFDFWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Application: automotive industry
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DMTH4008LFDFWQ-7 DIODES INCORPORATED DMTH4008LFDFWQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Application: automotive industry
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DMTH4008LPSQ-13 DIODES INCORPORATED DMTH4008LPSQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 13mΩ
Power dissipation: 2.99W
Drain current: 10.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 110A
Application: automotive industry
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DMP4050SSDQ-13 DMP4050SSDQ-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1A38704F1F8BF&compId=DMP4050SSD.pdf?ci_sign=4349ede70acdcca9e2d1332e334f6cfdb2c63352 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -4.1A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.1A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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SMAJ54A-13-F SMAJ54A-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386 Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3094 шт:
термін постачання 21-30 дні (днів)
27+16.16 грн
39+10.35 грн
100+5.07 грн
213+4.38 грн
586+4.14 грн
1000+3.98 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
ZXMHC10A07T8TA DIODES INCORPORATED ZXMHC10A07T8.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 1.3W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 1.4/-1.3A
Power dissipation: 1.3W
Case: SM8
Gate-source voltage: ±20V
On-state resistance: 700mΩ/1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Gate charge: 2.9/3.5nC
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DMG6602SVTQ-7 DMG6602SVTQ-7 DIODES INCORPORATED DMG6602SVTQ_Rev1-2_Dec2014.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.7/-2.4A
Pulsed drain current: 25...-20A
Power dissipation: 0.84W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.06/0.095Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 2227 шт:
термін постачання 21-30 дні (днів)
14+31.47 грн
21+18.88 грн
50+13.51 грн
100+11.69 грн
148+6.32 грн
407+5.92 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SMAZ12-13-F SMAZ12-13-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AFB86DDAF826E0C4&compId=SMAZx-13-F.pdf?ci_sign=b12d4006ba65a472eaab9a6f640870a647181c64 Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; 83mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Zener current: 83mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 4840 шт:
термін постачання 21-30 дні (днів)
32+13.61 грн
37+10.82 грн
50+8.53 грн
100+7.58 грн
186+5.05 грн
510+4.74 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
1SMB5927B-13 1SMB5927B-13 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 412 шт:
термін постачання 21-30 дні (днів)
20+21.26 грн
31+12.87 грн
100+9.56 грн
147+6.40 грн
402+6.00 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
AZ23C6V2-7-F AZ23C6V2-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B7A017D94BAE6143&compId=AZ23C_ser.pdf?ci_sign=f8289f634af17fc3dccb307520c64a27b76de4d8 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 6.2V
Semiconductor structure: common anode; double
Type of diode: Zener
на замовлення 1050 шт:
термін постачання 21-30 дні (днів)
46+9.36 грн
87+4.58 грн
114+3.48 грн
250+3.17 грн
331+2.82 грн
908+2.67 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
APX823-26W5G-7 APX823-26W5G-7 DIODES INCORPORATED APX823_824_825A.pdf Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Type of integrated circuit: supervisor circuit
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Integrated circuit features: manual reset; watchdog
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 2.63V
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
19+22.97 грн
24+16.90 грн
27+15.16 грн
31+13.03 грн
97+9.64 грн
267+9.08 грн
1000+8.77 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
DDTB114EC-7-F DIODES INCORPORATED DDTB_XXXX_C.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Power dissipation: 0.2W
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BZT52C13T-7 BZT52C13T-7 DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 1854 шт:
термін постачання 21-30 дні (днів)
56+7.66 грн
85+4.66 грн
178+2.23 грн
430+2.16 грн
1183+2.05 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
BZT52C13Q-7-F BZT52C13Q-7-F DIODES INCORPORATED pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6 Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 13V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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BZT52C13LP-7 DIODES INCORPORATED DS_31_BZT52C2V4LP-BZT52C39LP.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
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BZT52C13LPQ-7 DIODES INCORPORATED BZT52C6V8LPQ-BZT52C16LPQ.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Application: automotive industry
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BZT52C13TQ-7-F DIODES INCORPORATED ds30502.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
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AZV393MTR-G1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F41CA496DA9E28&compId=AZV393.pdf?ci_sign=474f0f24e77c2d18c6562a18a25d124dc6d6054b
AZV393MTR-G1
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; low-power; Cmp: 2; SMT; SO8; reel,tape; 150nA
Type of integrated circuit: comparator
Kind of comparator: low-power
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 150nA
Voltage supply range: 2.5...5.5V DC
на замовлення 83 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
65+6.55 грн
Мінімальне замовлення: 65
В кошику  од. на суму  грн.
AS393AMTR-E1 AS393-A.pdf
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; precision; Cmp: 2; SMT; SO8; reel,tape; Iio: 200nA
Type of integrated circuit: comparator
Kind of comparator: precision
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 5mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 200nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Input bias current: 0.4µA
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AS393MTR-E1 AS393-A.pdf
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; precision; Cmp: 2; SMT; SO8; reel,tape; Iio: 200nA
Type of integrated circuit: comparator
Kind of comparator: precision
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 7mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 200nA
Voltage supply range: ± 1...18V DC; 2...36V DC
Input bias current: 0.4µA
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AS393MTR-G1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B9F3F447ACF97E28&compId=AS393x.pdf?ci_sign=bba55b337ec09780594fa5b8568d6b34774d544b
AS393MTR-G1
Виробник: DIODES INCORPORATED
Category: SMD comparators
Description: IC: comparator; precision; Cmp: 2; SMT; SO8; reel,tape; 200nA
Type of integrated circuit: comparator
Kind of comparator: precision
Number of comparators: 2
Mounting: SMT
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 7mV
Kind of package: reel; tape
Kind of output: open collector
Input offset current: 200nA
Voltage supply range: ± 1...18V DC; 2...36V DC
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AS358MTR-G1 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B79C079C6B164143&compId=AS358-358A-358B.pdf?ci_sign=eb1db62d9d0f3d6c05364836e9f10525722211c3
AS358MTR-G1
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SO8; 3÷36VDC; reel,tape
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 2mV
Voltage supply range: 3...36V DC
Kind of package: reel; tape
Power dissipation: 0.55W
Open-loop gain: 100dB
на замовлення 4042 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
36+11.91 грн
43+9.32 грн
49+8.14 грн
58+6.86 грн
100+5.47 грн
250+4.90 грн
339+2.74 грн
930+2.59 грн
Мінімальне замовлення: 36
В кошику  од. на суму  грн.
AS358MTR-E1 AS358-358A-358B.pdf
Виробник: DIODES INCORPORATED
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SO8; 3÷36VDC; reel,tape; IB: 0.2uA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: 3...36V DC
Kind of package: reel; tape
Input bias current: 0.2µA
Input offset current: 100nA
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ZTX603 ZTX602.pdf
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 250MHz
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ZTX605STZ ZTX604.pdf
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 120V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 120V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 150MHz
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ZTX603STZ ZTX602.pdf
Виробник: DIODES INCORPORATED
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 4A
Current gain: 500...100000
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 250MHz
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BAT54T-7-F BAT54T_AT_CT_ST.pdf
BAT54T-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.15W
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
39+11.06 грн
54+7.42 грн
100+5.20 грн
250+4.53 грн
274+3.39 грн
753+3.21 грн
3000+3.13 грн
Мінімальне замовлення: 39
В кошику  од. на суму  грн.
BAT54TA bat54srs.pdf
BAT54TA
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.15W
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BAT54TQ-7-F BAT54TQ-STQ.pdf
BAT54TQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky rectifying
Case: SOT523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.15W
Application: automotive industry
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BAT54TWQ-7-F BAT54SDWQ-TWQ.pdf
BAT54TWQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT363; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: SOT363
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: triple independent
Capacitance: 10pF
Max. forward voltage: 1V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: reel; tape
Power dissipation: 0.2W
Application: automotive industry
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AP7383-18WR-7 AP7383.pdf
AP7383-18WR-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Output current: 0.15A
Output voltage: 1.8V
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Input voltage: 3.5...30V
Manufacturer series: AP7383
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AP7383-18FDC-7 AP7383.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.05A; uDFN6; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Output current: 50mA
Output voltage: 1.8V
Case: uDFN6
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Input voltage: 3.5...30V
Manufacturer series: AP7383
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AP7383-18W5-7 AP7383.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT25; SMD
Type of integrated circuit: voltage regulator
Integrated circuit features: shutdown mode control input
Mounting: SMD
Output current: 0.15A
Output voltage: 1.8V
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Input voltage: 3.5...30V
Manufacturer series: AP7383
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AP7383-18WW-7 AP7383.pdf
AP7383-18WW-7
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.05A; SOT25; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Output current: 50mA
Output voltage: 1.8V
Case: SOT25
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Input voltage: 3.5...30V
Manufacturer series: AP7383
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AP7383-18Y-13 AP7383.pdf
AP7383-18Y-13
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; SOT89; SMD
Type of integrated circuit: voltage regulator
Mounting: SMD
Output current: 0.15A
Output voltage: 1.8V
Case: SOT89
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Number of channels: 1
Tolerance: ±1%
Voltage drop: 1.5V
Input voltage: 3.5...30V
Manufacturer series: AP7383
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DMP3036SFV-7 DMP3036SFV.pdf
DMP3036SFV-7
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -7A
Gate charge: 16.5nC
On-state resistance: 29mΩ
Power dissipation: 2.3W
Gate-source voltage: ±25V
Kind of package: 7 inch reel; tape
на замовлення 1969 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+48.48 грн
12+34.52 грн
62+15.09 грн
169+14.30 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
ZXTN25015DFHTA ZXTN25015DFH.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+20.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ZXTP25012EFHTA ZXTP25012EFH.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3000+20.92 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DMN10H220LE-13 DMN10H220LE.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Gate charge: 8.3nC
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ZXTD619MCTA ZXTD619MC.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 50V; 4A; 2.45W; DFN3020B-8
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 4A
Power dissipation: 2.45W
Case: DFN3020B-8
Pulsed collector current: 6A
Current gain: 40...450
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...165MHz
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FZT951TA FZT951_FZT953.pdf
FZT951TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 5A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 120MHz
Power dissipation: 3W
на замовлення 28 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
9+52.74 грн
10+41.31 грн
25+36.25 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
FCX790ATA pVersion=0046&contRep=ZT&docId=005056AB752F1EE799C5610F53C86749&compId=FCX790A.pdf?ci_sign=3c605a9ae92b687525150bb4becf48c7b9a8674f
FCX790ATA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 2A; 1W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 2A
Case: SOT89
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Power dissipation: 1W
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+56.14 грн
10+40.91 грн
12+35.31 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FCX555TA FCX555.pdf
FCX555TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 150V; 700mA; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 150V
Collector current: 0.7A
Case: SOT89
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
на замовлення 936 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+55.29 грн
13+32.22 грн
50+24.25 грн
70+13.35 грн
192+12.64 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
FZT949TA FZT949.pdf
FZT949TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 5.5A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 5.5A
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 100MHz
Power dissipation: 3W
на замовлення 157 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+105.47 грн
10+57.58 грн
28+33.65 грн
76+31.83 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BAT54LP-7 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED983E731098CB34143&compId=BAT54LP.pdf?ci_sign=e935419e32d10145da12ed6f57f2facde4c361fc
BAT54LP-7
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN2; SMD; 30V; 0.2A; 5ns; reel,tape
Type of diode: Schottky rectifying
Case: DFN2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.25W
Reverse recovery time: 5ns
Capacitance: 10pF
на замовлення 838 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
23+18.71 грн
29+13.90 грн
33+12.16 грн
100+7.16 грн
338+2.75 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
BAT54LPS-7 BAT54LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X2-DFN1006-2; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky rectifying
Case: X2-DFN1006-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.25V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.65W
Leakage current: 2µA
Reverse recovery time: 5ns
Capacitance: 10pF
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BAT54LP-7B BAT54LP.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.25W
Leakage current: 2µA
Reverse recovery time: 5ns
Capacitance: 10pF
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BAT54LPQ-7 BAT54LPQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; X1-DFN1006-2; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky rectifying
Case: X1-DFN1006-2
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Power dissipation: 0.25W
Leakage current: 2µA
Reverse recovery time: 5ns
Capacitance: 10pF
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SB140-T ds23022.pdf
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.5V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
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TT8M_HF TT8M_LS.pdf
Виробник: DIODES INCORPORATED
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase
Type of bridge rectifier: single-phase
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1500+13.01 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
SB180-T ds30116.pdf
Виробник: DIODES INCORPORATED
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 1A; DO41; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.8V
Max. forward impulse current: 25A
Capacitance: 80pF
Kind of package: reel; tape
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DMC4050SSDQ-13 DMC4050SSDQ_Web.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 40/-40V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Kind of transistor: complementary pair
Drain-source voltage: 40/-40V
Drain current: 5.8/-5.8A
Power dissipation: 2.14W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/45mΩ
Mounting: SMD
Gate charge: 37.56/33.66nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN4008LFG-13 DMN4008LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 15.4A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
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DMN4008LFG-7 DMN4008LFG.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W
Case: PowerDI3333-8
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 74nC
On-state resistance: 20mΩ
Power dissipation: 2.3W
Drain current: 15.4A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 90A
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DMT4008LFV-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.7A; Idm: 70A; 1.9W
Case: PowerDI3333-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 17.1nC
On-state resistance: 12mΩ
Power dissipation: 1.9W
Drain current: 9.7A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 70A
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DMTH4008LFDFW-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
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DMTH4008LPS-13 DMTH4008LPS.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 13mΩ
Power dissipation: 2.99W
Drain current: 10.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 110A
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DMTH4008LFDFWQ-13 DMTH4008LFDFWQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Application: automotive industry
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DMTH4008LFDFWQ-7 DMTH4008LFDFWQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 8.2A; Idm: 80A; 2.35W
Case: U-DFN2020-6
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 14.2nC
On-state resistance: 18mΩ
Power dissipation: 2.35W
Drain current: 8.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 80A
Application: automotive industry
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DMTH4008LPSQ-13 DMTH4008LPSQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10.2A; Idm: 110A; 2.99W
Case: PowerDI5060-8
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 15.3nC
On-state resistance: 13mΩ
Power dissipation: 2.99W
Drain current: 10.2A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 110A
Application: automotive industry
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DMP4050SSDQ-13 pVersion=0046&contRep=ZT&docId=005056AB82531EE986E1A38704F1F8BF&compId=DMP4050SSD.pdf?ci_sign=4349ede70acdcca9e2d1332e334f6cfdb2c63352
DMP4050SSDQ-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -40V; -4.1A; 1.25W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -4.1A
Power dissipation: 1.25W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 79mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
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SMAJ54A-13-F pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB5D5D61A59AC00D2&compId=SMAJ_ser.pdf?ci_sign=97d7e07ffaac288e0eb21ce6c5e39913c3418386
SMAJ54A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 60÷66.3V; 4.6A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 54V
Breakdown voltage: 60...66.3V
Max. forward impulse current: 4.6A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 3094 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
27+16.16 грн
39+10.35 грн
100+5.07 грн
213+4.38 грн
586+4.14 грн
1000+3.98 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
ZXMHC10A07T8TA ZXMHC10A07T8.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET x2; unipolar; complementary pair; 1.3W
Type of transistor: N/P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100/-100V
Drain current: 1.4/-1.3A
Power dissipation: 1.3W
Case: SM8
Gate-source voltage: ±20V
On-state resistance: 700mΩ/1Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
Gate charge: 2.9/3.5nC
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DMG6602SVTQ-7 DMG6602SVTQ_Rev1-2_Dec2014.pdf
DMG6602SVTQ-7
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 2.7/-2.4A; Idm: 25÷-20A
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.7/-2.4A
Pulsed drain current: 25...-20A
Power dissipation: 0.84W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.06/0.095Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 2227 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
14+31.47 грн
21+18.88 грн
50+13.51 грн
100+11.69 грн
148+6.32 грн
407+5.92 грн
Мінімальне замовлення: 14
В кошику  од. на суму  грн.
SMAZ12-13-F pVersion=0046&contRep=ZT&docId=005056AB90B41ED9AFB86DDAF826E0C4&compId=SMAZx-13-F.pdf?ci_sign=b12d4006ba65a472eaab9a6f640870a647181c64
SMAZ12-13-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; 83mA; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Zener current: 83mA
Kind of package: reel; tape
Case: SMA
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 4840 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
32+13.61 грн
37+10.82 грн
50+8.53 грн
100+7.58 грн
186+5.05 грн
510+4.74 грн
Мінімальне замовлення: 32
В кошику  од. на суму  грн.
1SMB5927B-13 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE93956F8C724E00D5&compId=1SMB59xxB_ser.pdf?ci_sign=140ee87785c16e5645df5082b6b0071899735e3a
1SMB5927B-13
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 12V; SMD; reel,tape; SMB; single diode; 1uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: reel; tape
Case: SMB
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
на замовлення 412 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
20+21.26 грн
31+12.87 грн
100+9.56 грн
147+6.40 грн
402+6.00 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
AZ23C6V2-7-F pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8B7A017D94BAE6143&compId=AZ23C_ser.pdf?ci_sign=f8289f634af17fc3dccb307520c64a27b76de4d8
AZ23C6V2-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.3W
Zener voltage: 6.2V
Semiconductor structure: common anode; double
Type of diode: Zener
на замовлення 1050 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
46+9.36 грн
87+4.58 грн
114+3.48 грн
250+3.17 грн
331+2.82 грн
908+2.67 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
APX823-26W5G-7 APX823_824_825A.pdf
APX823-26W5G-7
Виробник: DIODES INCORPORATED
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); SOT25
Type of integrated circuit: supervisor circuit
Case: SOT25
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Integrated circuit features: manual reset; watchdog
DC supply current: 30µA
Maximum output current: 20mA
Delay time: 200ms
Supply voltage: 1.1...5.5V DC
Threshold on-voltage: 2.63V
Kind of integrated circuit: power on reset monitor (PoR)
Active logical level: low
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
19+22.97 грн
24+16.90 грн
27+15.16 грн
31+13.03 грн
97+9.64 грн
267+9.08 грн
1000+8.77 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
DDTB114EC-7-F DDTB_XXXX_C.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 200mW; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.5A
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 56
Quantity in set/package: 3000pcs.
Power dissipation: 0.2W
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BZT52C13T-7 pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED501D88D5DAA18&compId=BZT52CxxT_ser.pdf?ci_sign=9b1d5fda49b682032f84d8fd71549d6b9146d78b
BZT52C13T-7
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
на замовлення 1854 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
56+7.66 грн
85+4.66 грн
178+2.23 грн
430+2.16 грн
1183+2.05 грн
Мінімальне замовлення: 56
В кошику  од. на суму  грн.
BZT52C13Q-7-F pVersion=0046&contRep=ZT&docId=005056AB752F1ED7BED5211ADD746A18&compId=BZT52Cxx_ser.pdf?ci_sign=95d454b64d194db3b460a4ff8a5c90b54420aea6
BZT52C13Q-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 13V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Application: automotive industry
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BZT52C13LP-7 DS_31_BZT52C2V4LP-BZT52C39LP.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
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BZT52C13LPQ-7 BZT52C6V8LPQ-BZT52C16LPQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 13V; SMD; reel,tape; X1-DFN1006-2
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±8%
Kind of package: reel; tape
Case: X1-DFN1006-2
Semiconductor structure: single diode
Application: automotive industry
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BZT52C13TQ-7-F ds30502.pdf
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 13V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±6.5%
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: single diode
Application: automotive industry
товару немає в наявності
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