Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (80096) > Сторінка 1333 з 1335
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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DMN53D0LDW-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.25A Power dissipation: 0.31W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD |
на замовлення 895 шт: термін постачання 21-30 дні (днів) |
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DMN63D8LDWQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.3W; SOT363; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.26A Power dissipation: 0.3W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2.8Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Application: automotive industry |
на замовлення 4575 шт: термін постачання 21-30 дні (днів) |
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DMN3190LDW-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.9A Power dissipation: 0.32W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Version: ESD Pulsed drain current: 9.6A |
на замовлення 513 шт: термін постачання 21-30 дні (днів) |
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DDC123JU-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ Type of transistor: NPN x2 Kind of package: reel; tape Case: SOT363 Collector current: 0.1A Power dissipation: 0.2W Collector-emitter voltage: 50V Current gain: 100...600 Base resistor: 2.2kΩ Quantity in set/package: 3000pcs. Base-emitter resistor: 47kΩ Frequency: 250MHz Polarisation: bipolar Kind of transistor: BRT Mounting: SMD |
на замовлення 2549 шт: термін постачання 21-30 дні (днів) |
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DMN2450UFD-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 890mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.7A Pulsed drain current: 3A Power dissipation: 0.89W Case: X1-DFN1212-3 Gate-source voltage: ±12V On-state resistance: 1.6Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 0.7nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMN2450UFB4-7B | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.8A Pulsed drain current: 3A Power dissipation: 0.9W Case: X2-DFN1006-3 Gate-source voltage: ±12V On-state resistance: 0.7Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 1.3nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMN2450UFB4-7R | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.8A Pulsed drain current: 3A Power dissipation: 0.9W Case: X2-DFN1006-3 Gate-source voltage: ±12V On-state resistance: 0.7Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 1.3nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMN2451UFB4Q-7B | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 3A; 1.1W; ESD Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1.3A Pulsed drain current: 3A Power dissipation: 1.1W Case: X2-DFN1006-3 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate charge: 6.4nC Version: ESD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMN2451UFB4-7B | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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DMN2451UFDQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
на замовлення 57000 шт: термін постачання 21-30 дні (днів) |
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74AHC1G07QSE-7 | DIODES INCORPORATED |
![]() Description: IC: digital Type of integrated circuit: digital |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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DMP6110SVTQ-7 | DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -6.5A Power dissipation: 1.2W Case: TSOT26 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 1333 шт: термін постачання 21-30 дні (днів) |
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RS1G-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SMA Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
RS1GB-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Case: SMB Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
RS1DB-13-F | DIODES INCORPORATED |
![]() Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Case: SMB Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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GBU1010 | DIODES INCORPORATED |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 10A Max. forward impulse current: 220A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
DMN2501UFB4-7 | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; Idm: 6A; 700mW Case: X2-DFN1006-3 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 2nC On-state resistance: 0.7Ω Power dissipation: 0.7W Drain current: 1.4A Pulsed drain current: 6A Gate-source voltage: ±8V Drain-source voltage: 20V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DMN2250UFB-7B | DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1.03A; Idm: 6A; 300mW Case: X1-DFN1006-3 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Gate charge: 3.1nC On-state resistance: 0.25Ω Power dissipation: 0.3W Drain current: 1.03A Pulsed drain current: 6A Gate-source voltage: ±8V Drain-source voltage: 20V Kind of package: 7 inch reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
ZXTP2012ASTZ | DIODES INCORPORATED |
![]() Description: Transistor: PNP; unipolar; 60V; 3.5A; 1W; TO92 Type of transistor: PNP Polarisation: unipolar Collector-emitter voltage: 60V Collector current: 3.5A Power dissipation: 1W Case: TO92 Pulsed collector current: 15A Current gain: 10...300 Mounting: THT Quantity in set/package: 2000pcs. Frequency: 120MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FMMT718TC | DIODES INCORPORATED |
![]() Description: Transistor: PNP Type of transistor: PNP |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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FMMT734TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; Darlington; 100V; 0.8A; 806mW; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 0.8A Power dissipation: 0.806W Case: SOT23 Pulsed collector current: 5A Current gain: 150...60000 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 140MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FMMT717QTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 12V; 2.5A; 806mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 2.5A Power dissipation: 0.806W Case: SOT23 Pulsed collector current: 10A Current gain: 45...475 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 80...110MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FMMT723QTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 100V; 1A; 806mW; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 0.806W Case: SOT23 Pulsed collector current: 2.5A Current gain: 30...475 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 150...200MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
ZXTN25100DGQTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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ZXTN2011G | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 6A; 3W; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Power dissipation: 3W Case: SOT223 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 130MHz |
на замовлення 6 шт: термін постачання 21-30 дні (днів) |
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ZXTN25012EZTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 12V; 6.5A; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 6.5A Case: SOT89 Current gain: 30...1500 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 260MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
ZXTN08400BFFTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 400V; 0.5A; SOT23F Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 0.5A Case: SOT23F Pulsed collector current: 1A Current gain: 10...300 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 40MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ZXTN19020DZQTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 20V; 7.5A; SOT89; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 20V Collector current: 7.5A Case: SOT89 Pulsed collector current: 20A Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 160MHz Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ZXTN2005ZTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 25V; 5.5A; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 5.5A Case: SOT89 Current gain: 40...450 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 150MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
ZXTN2011GTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 100V; 6A; SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 6A Case: SOT223 Current gain: 10...300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 130MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
ZXTN619MATA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 50V; 4.3A; 2.45W; U-DFN2020-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 4.3A Power dissipation: 2.45W Case: U-DFN2020-3 Current gain: 40...400 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 165MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
ZXTN620MATA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 80V; 3.8A; 2.45W; DFN2020B-3 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 3.8A Power dissipation: 2.45W Case: DFN2020B-3 Pulsed collector current: 5A Current gain: 10...900 Mounting: SMD Quantity in set/package: 3000pcs. Kind of package: reel; tape Frequency: 100...160MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
ZXTN2010ZTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; 60V; 5A; 2.1W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 5A Power dissipation: 2.1W Case: SOT89 Current gain: 200 Mounting: SMD Frequency: 130MHz |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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ZXTN25040DFHTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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ZXTN04120HP5TC | DIODES INCORPORATED |
![]() Description: ZXTN04120HP5TC |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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ZXTN04120HFFTA | DIODES INCORPORATED |
![]() Description: ZXTN04120HFFTA |
на замовлення 9000 шт: термін постачання 21-30 дні (днів) |
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ZXTN19020DFFTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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ZXTN2018FTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
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ZXTN25020DFLTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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ZXTN2010ZQTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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ZXTN25020BFHTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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ZXTN07012EFFTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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ZXTN07045EFFTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 126000 шт: термін постачання 21-30 дні (днів) |
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ZXTN19020CFFTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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ZXTN19020DGTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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ZXTN19100CGTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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ZXTN2005GTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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ZXTN2018FQTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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ZXTN2038FTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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ZXTN2040FTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 69000 шт: термін постачання 21-30 дні (днів) |
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ZXTN25012EFLTA | DIODES INCORPORATED |
![]() Description: Transistor: NPN Type of transistor: NPN |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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FMMTL717TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 12V; 1.25A; 500mW; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 0.5W Collector current: 1.25A Pulsed collector current: 4A Collector-emitter voltage: 12V Current gain: 50...490 Quantity in set/package: 3000pcs. Frequency: 205MHz Polarisation: bipolar Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
FMMTL718TA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 20V; 1A; 500mW; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 0.5W Collector current: 1A Pulsed collector current: 2A Collector-emitter voltage: 20V Current gain: 50...500 Quantity in set/package: 3000pcs. Frequency: 265MHz Polarisation: bipolar Type of transistor: PNP Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
DDTC124XCA-7-F | DIODES INCORPORATED |
![]() Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 47kΩ Current gain: 68 Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
AP7361EA-25E-13 | DIODES INCORPORATED |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD Mounting: SMD Case: SOT223 Operating temperature: -40...85°C Voltage drop: 0.7V Number of channels: 1 Output current: 1A Tolerance: ±1% Input voltage: 2.2...6V Output voltage: 2.5V Manufacturer series: AP7361EA Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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FZT953QTA | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 100V; 5A; 3W; SOT223; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 5A Power dissipation: 3W Case: SOT223 Current gain: 15...200 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 125MHz Pulsed collector current: 10A Application: automotive industry |
на замовлення 193 шт: термін постачання 21-30 дні (днів) |
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FZT953TA | DIODES INCORPORATED |
![]() ![]() Description: Transistor: PNP; bipolar; 100V; 5A; 1.6W; SOT223 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 5A Power dissipation: 1.6W Case: SOT223 Current gain: 100...300 Mounting: SMD Quantity in set/package: 1000pcs. Kind of package: reel; tape Frequency: 125MHz |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BZT52C7V5-7-F | DIODES INCORPORATED |
![]() Description: Diode: Zener; 0.37W; 7.5V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.37W Zener voltage: 7.5V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
на замовлення 1132 шт: термін постачання 21-30 дні (днів) |
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UF1004-T | DIODES INCORPORATED |
![]() Description: Diode: rectifying Type of diode: rectifying |
на замовлення 5000 шт: термін постачання 21-30 дні (днів) |
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BC857BLP-7B | DIODES INCORPORATED |
![]() Description: Transistor: PNP; bipolar; 45V; 0.1A; 1W; X1-DFN1006-3 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 1W Case: X1-DFN1006-3 Current gain: 220...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Pulsed collector current: 0.2A Quantity in set/package: 10000pcs. |
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В кошику од. на суму грн. |
DMN53D0LDW-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.25A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.25A; 0.31W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.25A
Power dissipation: 0.31W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 895 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.36 грн |
60+ | 6.63 грн |
76+ | 5.26 грн |
100+ | 4.78 грн |
250+ | 3.71 грн |
687+ | 3.51 грн |
DMN63D8LDWQ-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.3W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.26A; 0.3W; SOT363; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.26A
Power dissipation: 0.3W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Application: automotive industry
на замовлення 4575 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
36+ | 11.91 грн |
50+ | 8.06 грн |
61+ | 6.57 грн |
100+ | 4.69 грн |
282+ | 3.30 грн |
500+ | 3.18 грн |
774+ | 3.12 грн |
3000+ | 3.00 грн |
DMN3190LDW-7 |
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Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 9.6A
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 0.9A; Idm: 9.6A; 0.32W; ESD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.9A
Power dissipation: 0.32W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
Pulsed drain current: 9.6A
на замовлення 513 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
34+ | 12.76 грн |
42+ | 9.48 грн |
49+ | 8.21 грн |
67+ | 5.92 грн |
100+ | 5.26 грн |
188+ | 4.94 грн |
500+ | 4.49 грн |
DDC123JU-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 100...600
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 200mW; SOT363; R1: 2.2kΩ
Type of transistor: NPN x2
Kind of package: reel; tape
Case: SOT363
Collector current: 0.1A
Power dissipation: 0.2W
Collector-emitter voltage: 50V
Current gain: 100...600
Base resistor: 2.2kΩ
Quantity in set/package: 3000pcs.
Base-emitter resistor: 47kΩ
Frequency: 250MHz
Polarisation: bipolar
Kind of transistor: BRT
Mounting: SMD
на замовлення 2549 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
46+ | 9.36 грн |
60+ | 6.63 грн |
67+ | 5.92 грн |
100+ | 4.12 грн |
250+ | 3.65 грн |
426+ | 2.18 грн |
1170+ | 2.06 грн |
DMN2450UFD-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 890mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.89W
Case: X1-DFN1212-3
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 0.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 3A; 890mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.7A
Pulsed drain current: 3A
Power dissipation: 0.89W
Case: X1-DFN1212-3
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 0.7nC
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DMN2450UFB4-7B |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 3A
Power dissipation: 0.9W
Case: X2-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 3A
Power dissipation: 0.9W
Case: X2-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.3nC
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DMN2450UFB4-7R |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 3A
Power dissipation: 0.9W
Case: X2-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.3nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; Idm: 3A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Pulsed drain current: 3A
Power dissipation: 0.9W
Case: X2-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 1.3nC
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DMN2451UFB4Q-7B |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 3A; 1.1W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Pulsed drain current: 3A
Power dissipation: 1.1W
Case: X2-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 6.4nC
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 3A; 1.1W; ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.3A
Pulsed drain current: 3A
Power dissipation: 1.1W
Case: X2-DFN1006-3
Gate-source voltage: ±12V
On-state resistance: 0.5Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Gate charge: 6.4nC
Version: ESD
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DMN2451UFB4-7B |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 3.16 грн |
DMN2451UFDQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
на замовлення 57000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.82 грн |
74AHC1G07QSE-7 |
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Виробник: DIODES INCORPORATED
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.33 грн |
DMP6110SVTQ-7 |
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Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.5A
Power dissipation: 1.2W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -6.5A; 1.2W; TSOT26
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -6.5A
Power dissipation: 1.2W
Case: TSOT26
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1333 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 58.69 грн |
11+ | 39.41 грн |
45+ | 20.85 грн |
123+ | 19.75 грн |
1000+ | 19.19 грн |
RS1G-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
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RS1GB-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 150ns; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
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RS1DB-13-F |
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Виробник: DIODES INCORPORATED
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; SMB; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Case: SMB
Kind of package: reel; tape
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GBU1010 |
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Виробник: DIODES INCORPORATED
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 220A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 10A
Max. forward impulse current: 220A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Features of semiconductor devices: glass passivated
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DMN2501UFB4-7 |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; Idm: 6A; 700mW
Case: X2-DFN1006-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 2nC
On-state resistance: 0.7Ω
Power dissipation: 0.7W
Drain current: 1.4A
Pulsed drain current: 6A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.4A; Idm: 6A; 700mW
Case: X2-DFN1006-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 2nC
On-state resistance: 0.7Ω
Power dissipation: 0.7W
Drain current: 1.4A
Pulsed drain current: 6A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
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DMN2250UFB-7B |
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Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.03A; Idm: 6A; 300mW
Case: X1-DFN1006-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 3.1nC
On-state resistance: 0.25Ω
Power dissipation: 0.3W
Drain current: 1.03A
Pulsed drain current: 6A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.03A; Idm: 6A; 300mW
Case: X1-DFN1006-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 3.1nC
On-state resistance: 0.25Ω
Power dissipation: 0.3W
Drain current: 1.03A
Pulsed drain current: 6A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: 7 inch reel; tape
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ZXTP2012ASTZ |
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Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; unipolar; 60V; 3.5A; 1W; TO92
Type of transistor: PNP
Polarisation: unipolar
Collector-emitter voltage: 60V
Collector current: 3.5A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 15A
Current gain: 10...300
Mounting: THT
Quantity in set/package: 2000pcs.
Frequency: 120MHz
Category: PNP THT transistors
Description: Transistor: PNP; unipolar; 60V; 3.5A; 1W; TO92
Type of transistor: PNP
Polarisation: unipolar
Collector-emitter voltage: 60V
Collector current: 3.5A
Power dissipation: 1W
Case: TO92
Pulsed collector current: 15A
Current gain: 10...300
Mounting: THT
Quantity in set/package: 2000pcs.
Frequency: 120MHz
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FMMT718TC |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
Category: PNP SMD transistors
Description: Transistor: PNP
Type of transistor: PNP
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10000+ | 12.76 грн |
FMMT734TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 0.8A; 806mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 5A
Current gain: 150...60000
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 100V; 0.8A; 806mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 0.8A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 5A
Current gain: 150...60000
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 140MHz
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FMMT717QTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2.5A; 806mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 10A
Current gain: 45...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 80...110MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 2.5A; 806mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 2.5A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 10A
Current gain: 45...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 80...110MHz
Application: automotive industry
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FMMT723QTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 806mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 2.5A
Current gain: 30...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...200MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 806mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.806W
Case: SOT23
Pulsed collector current: 2.5A
Current gain: 30...475
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 150...200MHz
Application: automotive industry
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ZXTN25100DGQTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 26.20 грн |
ZXTN2011G |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; 3W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
на замовлення 6 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 65.56 грн |
ZXTN25012EZTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 6.5A; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6.5A
Case: SOT89
Current gain: 30...1500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 260MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 6.5A; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 6.5A
Case: SOT89
Current gain: 30...1500
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 260MHz
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ZXTN08400BFFTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; SOT23F
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Case: SOT23F
Pulsed collector current: 1A
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 40MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 400V; 0.5A; SOT23F
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Case: SOT23F
Pulsed collector current: 1A
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 40MHz
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ZXTN19020DZQTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 7.5A; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 7.5A
Case: SOT89
Pulsed collector current: 20A
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 7.5A; SOT89; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 20V
Collector current: 7.5A
Case: SOT89
Pulsed collector current: 20A
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 160MHz
Application: automotive industry
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ZXTN2005ZTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 5.5A; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5.5A
Case: SOT89
Current gain: 40...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 5.5A; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5.5A
Case: SOT89
Current gain: 40...450
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 150MHz
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ZXTN2011GTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: SOT223
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 6A; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 6A
Case: SOT223
Current gain: 10...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 130MHz
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ZXTN619MATA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 4.3A; 2.45W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 4.3A
Power dissipation: 2.45W
Case: U-DFN2020-3
Current gain: 40...400
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 165MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 4.3A; 2.45W; U-DFN2020-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 4.3A
Power dissipation: 2.45W
Case: U-DFN2020-3
Current gain: 40...400
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 165MHz
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ZXTN620MATA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 3.8A; 2.45W; DFN2020B-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3.8A
Power dissipation: 2.45W
Case: DFN2020B-3
Pulsed collector current: 5A
Current gain: 10...900
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...160MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 3.8A; 2.45W; DFN2020B-3
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3.8A
Power dissipation: 2.45W
Case: DFN2020B-3
Pulsed collector current: 5A
Current gain: 10...900
Mounting: SMD
Quantity in set/package: 3000pcs.
Kind of package: reel; tape
Frequency: 100...160MHz
товару немає в наявності
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од. на суму грн.
ZXTN2010ZTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 2.1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 2.1W
Case: SOT89
Current gain: 200
Mounting: SMD
Frequency: 130MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 5A; 2.1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 5A
Power dissipation: 2.1W
Case: SOT89
Current gain: 200
Mounting: SMD
Frequency: 130MHz
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 25.60 грн |
ZXTN25040DFHTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 19.39 грн |
ZXTN04120HP5TC |
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на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 15.23 грн |
ZXTN04120HFFTA |
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на замовлення 9000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 17.52 грн |
ZXTN19020DFFTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 27.64 грн |
ZXTN2018FTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 28.83 грн |
ZXTN25020DFLTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.84 грн |
ZXTN2010ZQTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 32.24 грн |
ZXTN25020BFHTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 20.16 грн |
ZXTN07012EFFTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 18.20 грн |
ZXTN07045EFFTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 126000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 19.22 грн |
ZXTN19020CFFTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 24.84 грн |
ZXTN19020DGTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 29.17 грн |
ZXTN19100CGTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 27.64 грн |
ZXTN2005GTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1000+ | 33.43 грн |
ZXTN2018FQTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 19.65 грн |
ZXTN2038FTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.78 грн |
ZXTN2040FTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 69000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 8.59 грн |
ZXTN25012EFLTA |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.16 грн |
FMMTL717TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1.25A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.5W
Collector current: 1.25A
Pulsed collector current: 4A
Collector-emitter voltage: 12V
Current gain: 50...490
Quantity in set/package: 3000pcs.
Frequency: 205MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 1.25A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.5W
Collector current: 1.25A
Pulsed collector current: 4A
Collector-emitter voltage: 12V
Current gain: 50...490
Quantity in set/package: 3000pcs.
Frequency: 205MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
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В кошику
од. на суму грн.
FMMTL718TA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.5W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 20V
Current gain: 50...500
Quantity in set/package: 3000pcs.
Frequency: 265MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 20V; 1A; 500mW; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 0.5W
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 20V
Current gain: 50...500
Quantity in set/package: 3000pcs.
Frequency: 265MHz
Polarisation: bipolar
Type of transistor: PNP
Kind of package: reel; tape
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В кошику
од. на суму грн.
DDTC124XCA-7-F |
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Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Quantity in set/package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Current gain: 68
Quantity in set/package: 3000pcs.
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В кошику
од. на суму грн.
AP7361EA-25E-13 |
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Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD
Mounting: SMD
Case: SOT223
Operating temperature: -40...85°C
Voltage drop: 0.7V
Number of channels: 1
Output current: 1A
Tolerance: ±1%
Input voltage: 2.2...6V
Output voltage: 2.5V
Manufacturer series: AP7361EA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT223; SMD
Mounting: SMD
Case: SOT223
Operating temperature: -40...85°C
Voltage drop: 0.7V
Number of channels: 1
Output current: 1A
Tolerance: ±1%
Input voltage: 2.2...6V
Output voltage: 2.5V
Manufacturer series: AP7361EA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
FZT953QTA |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Current gain: 15...200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Pulsed collector current: 10A
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 3W
Case: SOT223
Current gain: 15...200
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Pulsed collector current: 10A
Application: automotive industry
на замовлення 193 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 88.46 грн |
10+ | 57.42 грн |
28+ | 33.73 грн |
76+ | 31.91 грн |
FZT953TA | ![]() |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 5A; 1.6W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 1.6W
Case: SOT223
Current gain: 100...300
Mounting: SMD
Quantity in set/package: 1000pcs.
Kind of package: reel; tape
Frequency: 125MHz
товару немає в наявності
В кошику
од. на суму грн.
BZT52C7V5-7-F |
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Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 7.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.37W; 7.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.37W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
на замовлення 1132 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
57+ | 7.48 грн |
70+ | 5.69 грн |
80+ | 4.98 грн |
140+ | 2.83 грн |
500+ | 2.03 грн |
798+ | 1.16 грн |
UF1004-T |
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Виробник: DIODES INCORPORATED
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying
Type of diode: rectifying
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5000+ | 3.44 грн |
BC857BLP-7B |
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Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 1W; X1-DFN1006-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 1W
Case: X1-DFN1006-3
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Quantity in set/package: 10000pcs.
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В кошику
од. на суму грн.