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GD60MPS06H GD60MPS06H GeneSiC Semiconductor GD60MPS06H.pdf Description: DIODE SIL CARB 650V 82A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1463pF @ 1V, 1MHz
Current - Average Rectified (Io): 82A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 804 шт:
термін постачання 21-31 дні (днів)
1+842.23 грн
10+729.28 грн
25+699.48 грн
100+616.64 грн
250+590.86 грн
500+572.44 грн
В кошику  од. на суму  грн.
GD2X30MPS12D GD2X30MPS12D GeneSiC Semiconductor GD2X30MPS12D.pdf Description: DIODE ARR SIC 1200V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 55A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 569 шт:
термін постачання 21-31 дні (днів)
1+1413.65 грн
10+1242.31 грн
25+1198.24 грн
100+1063.96 грн
250+1026.31 грн
500+998.25 грн
В кошику  од. на суму  грн.
GD30MPS12H GD30MPS12H GeneSiC Semiconductor GD30MPS12H.pdf Description: DIODE SIL CARB 1200V 55A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1101pF @ 1V, 1MHz
Current - Average Rectified (Io): 55A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 155 шт:
термін постачання 21-31 дні (днів)
1+740.04 грн
10+640.22 грн
25+613.57 грн
100+540.62 грн
В кошику  од. на суму  грн.
GD20MPS12H GD20MPS12H GeneSiC Semiconductor GD20MPS12H.pdf Description: DIODE SIL CARB 1200V 39A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 737pF @ 1V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 2914 шт:
термін постачання 21-31 дні (днів)
1+535.66 грн
10+462.84 грн
25+443.42 грн
100+390.41 грн
250+374.17 грн
500+362.67 грн
1000+345.41 грн
В кошику  од. на суму  грн.
GD2X20MPS12D GD2X20MPS12D GeneSiC Semiconductor GD2X20MPS12D.pdf Description: DIODE ARR SIC 1200V 39A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 39A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
1+895.88 грн
10+780.53 грн
25+749.37 грн
100+662.04 грн
В кошику  од. на суму  грн.
MSRT200120A MSRT200120A GeneSiC Semiconductor Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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MSRT200140A MSRT200140A GeneSiC Semiconductor Description: DIODE MODULE GP 1.4KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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MSRT200100A MSRT200100A GeneSiC Semiconductor MSRT20060%7E200100%28A%29.pdf Description: DIODE MOD GP 1000V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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MSRT200160A MSRT200160A GeneSiC Semiconductor Description: DIODE MOD GP 1600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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MSRT200120AD MSRT200120AD GeneSiC Semiconductor Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товару немає в наявності
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MSRT200100AD MSRT200100AD GeneSiC Semiconductor Description: DIODE MODULE GP 1KV 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
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MSRT200160AD MSRT200160AD GeneSiC Semiconductor Description: DIODE MOD GP 1600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
товару немає в наявності
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MSRT200140AD MSRT200140AD GeneSiC Semiconductor Description: DIODE MODULE GP 1.4KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
товару немає в наявності
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GD2X60MPS06N GD2X60MPS06N GeneSiC Semiconductor GD2X60MPS06N.pdf Description: DIODE MOD SIC 650V 70A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 369 шт:
термін постачання 21-31 дні (днів)
1+2818.79 грн
10+2493.30 грн
25+2410.51 грн
100+2150.07 грн
250+2078.25 грн
В кошику  од. на суму  грн.
GB10SLT12-214 GeneSiC Semiconductor Description: SIC SCHOTTKY DIODE 1200V 10A
товару немає в наявності
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MSRTA30080A MSRTA30080A GeneSiC Semiconductor Description: DIODE MODULE GP 800V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
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KBL403G GeneSiC Semiconductor KBL401G%7EKBL404G.pdf Description: BRIDGE RECT 1PHASE 200V 4A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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GBPC2510W GBPC2510W GeneSiC Semiconductor gbpc2506t.pdf Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 291 шт:
термін постачання 21-31 дні (днів)
2+309.13 грн
10+236.59 грн
25+216.04 грн
100+176.61 грн
250+161.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
GBPC2502W GBPC2502W GeneSiC Semiconductor gbpc25005t.pdf Description: BRIDGE RECT 1P 200V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 4011 шт:
термін постачання 21-31 дні (днів)
2+309.13 грн
10+236.59 грн
25+216.04 грн
100+176.61 грн
250+161.25 грн
500+150.49 грн
1000+138.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1N1184A 1N1184A GeneSiC Semiconductor 1n1183a.pdf Description: DIODE STANDARD 100V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
1+772.40 грн
10+622.42 грн
25+579.81 грн
100+488.73 грн
250+455.30 грн
В кошику  од. на суму  грн.
1N1186A 1N1186A GeneSiC Semiconductor 1n1183a.pdf Description: DIODE STANDARD 200V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
1+753.66 грн
10+607.25 грн
25+565.71 грн
100+476.84 грн
В кошику  од. на суму  грн.
MSRT10060AD MSRT10060AD GeneSiC Semiconductor msrt10060ad.pdf Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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KBPC5006W KBPC5006W GeneSiC Semiconductor kbpc5006t.pdf Description: BRIDGE RECT 1P 600V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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GBU10B GeneSiC Semiconductor gbu10a.pdf Description: BRIDGE 1-PH GBU 100V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 7485 шт:
термін постачання 21-31 дні (днів)
3+132.00 грн
10+90.12 грн
25+78.56 грн
100+59.94 грн
250+52.32 грн
500+47.19 грн
1000+41.88 грн
2500+36.47 грн
Мінімальне замовлення: 3
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MSRTA400120A MSRTA400120A GeneSiC Semiconductor MSRTA400120%28A%29%7EMSRTA400160%28A%29.pdf Description: DIODE MOD GP 1200V 400A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 400 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
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GD2X25MPS17N GD2X25MPS17N GeneSiC Semiconductor GD2X25MPS17N.pdf Description: DIODE MOD SIC 1700V 50A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
на замовлення 92 шт:
термін постачання 21-31 дні (днів)
1+3666.13 грн
10+3244.48 грн
25+3137.54 грн
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GD2X150MPS06N GD2X150MPS06N GeneSiC Semiconductor GD2X150MPS06N.pdf Description: DIODE MOD SIC 650V 150A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 325 шт:
термін постачання 21-31 дні (днів)
1+4677.83 грн
10+4163.27 грн
25+4035.08 грн
100+3611.32 грн
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1N3892 1N3892 GeneSiC Semiconductor 1n3889.pdf Description: DIODE STANDARD 400V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
на замовлення 88 шт:
термін постачання 21-31 дні (днів)
1+757.92 грн
10+592.74 грн
25+545.44 грн
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MBR6045 GeneSiC Semiconductor mbr60100.pdf Description: DIODE SCHOTTKY 45V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
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1N1183A GeneSiC Semiconductor 1n1183a.pdf Description: DIODE GEN PURP 50V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
GBJ25J GeneSiC Semiconductor gbj25m.pdf Description: 600V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
GBJ25G GeneSiC Semiconductor gbj25g.pdf Description: 400V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GBJ25D GeneSiC Semiconductor gbj25g.pdf Description: 200V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
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GBJ25M GeneSiC Semiconductor gbj25m.pdf Description: BRIDGE RECT 1PHASE 1KV 25A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
GBJ25B GeneSiC Semiconductor gbj25g.pdf Description: 100V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
1N2133A GeneSiC Semiconductor 1n2133a.pdf Description: DIODE GEN PURP 300V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MUR5010 MUR5010 GeneSiC Semiconductor mur5005.pdf Description: DIODE GEN PURP 100V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
MUR5020 GeneSiC Semiconductor mur5005.pdf Description: DIODE GEN PURP 200V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
GBJ15K GBJ15K GeneSiC Semiconductor gbj15k.pdf Description: BRIDGE RECT 1PHASE 800V 15A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
1N1206A 1N1206A GeneSiC Semiconductor s12m.pdf Description: DIODE STANDARD 600V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
1N1184R 1N1184R GeneSiC Semiconductor 1n1183.pdf Description: DIODE STANDARD REV 100V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
GBJ15D GeneSiC Semiconductor gbj15b.pdf Description: BRIDGE RECT 1PHASE 200V 15A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
GBJ15G GeneSiC Semiconductor gbj15b.pdf Description: BRIDGE RECT 1PHASE 400V 15A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GBJ15B GeneSiC Semiconductor gbj15b.pdf Description: BRIDGE RECT 1PHASE 100V 15A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
GBJ15J GeneSiC Semiconductor gbj15k.pdf Description: BRIDGE RECT 1PHASE 600V 15A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
1N3671A GeneSiC Semiconductor 1n3671a.pdf Description: DIODE GEN PURP 800V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
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MSRT20060A MSRT20060A GeneSiC Semiconductor MSRT20060%7E200100%28A%29.pdf Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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MSRT20060AD MSRT20060AD GeneSiC Semiconductor Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
GBU10K GeneSiC Semiconductor gbu10j.pdf Description: BRIDGE RECT 1PHASE 800V 10A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 187 шт:
термін постачання 21-31 дні (днів)
3+132.85 грн
10+90.78 грн
25+79.15 грн
100+60.40 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
KBPC2506W KBPC2506W GeneSiC Semiconductor kbpc2506t.pdf Description: BRIDGE RECT 1P 600V 25A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
KBPC3502W KBPC3502W GeneSiC Semiconductor kbpc35005t.pdf Description: BRIDGE RECT 1P 200V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
KBPC35005W KBPC35005W GeneSiC Semiconductor kbpc35005t.pdf Description: BRIDGE RECT 1P 50V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
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KBPC3501W KBPC3501W GeneSiC Semiconductor kbpc35005t.pdf Description: BRIDGE RECT 1P 100V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
KBPC3506W KBPC3506W GeneSiC Semiconductor kbpc3506t.pdf Description: BRIDGE RECT 1P 600V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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KBPC3508W KBPC3508W GeneSiC Semiconductor kbpc3506t.pdf Description: BRIDGE RECT 1P 800V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
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KBU1010 GeneSiC Semiconductor kbu1006.pdf Description: BRIDGE RECT 1PHASE 1KV 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
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KBPC2508W KBPC2508W GeneSiC Semiconductor kbpc2506t.pdf Description: BRIDGE RECT 1P 800V 25A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
MBR6035 GeneSiC Semiconductor mbr6020.pdf Description: DIODE SCHOTTKY 35V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
GBU10A GBU10A GeneSiC Semiconductor gbu10a.pdf Description: BRIDGE 1-PH GBU 50V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 471 шт:
термін постачання 21-31 дні (днів)
3+132.00 грн
10+90.12 грн
25+78.56 грн
100+59.94 грн
250+52.32 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBU10G GeneSiC Semiconductor gbu10a.pdf Description: BRIDGE 1-PH GBU 400V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
3+132.00 грн
10+90.12 грн
25+78.56 грн
100+59.94 грн
250+52.32 грн
500+47.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GD60MPS06H GD60MPS06H.pdf
GD60MPS06H
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 82A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1463pF @ 1V, 1MHz
Current - Average Rectified (Io): 82A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 804 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+842.23 грн
10+729.28 грн
25+699.48 грн
100+616.64 грн
250+590.86 грн
500+572.44 грн
В кошику  од. на суму  грн.
GD2X30MPS12D GD2X30MPS12D.pdf
GD2X30MPS12D
Виробник: GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 55A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 569 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1413.65 грн
10+1242.31 грн
25+1198.24 грн
100+1063.96 грн
250+1026.31 грн
500+998.25 грн
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GD30MPS12H GD30MPS12H.pdf
GD30MPS12H
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 55A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1101pF @ 1V, 1MHz
Current - Average Rectified (Io): 55A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 155 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+740.04 грн
10+640.22 грн
25+613.57 грн
100+540.62 грн
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GD20MPS12H GD20MPS12H.pdf
GD20MPS12H
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 39A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 737pF @ 1V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 2914 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+535.66 грн
10+462.84 грн
25+443.42 грн
100+390.41 грн
250+374.17 грн
500+362.67 грн
1000+345.41 грн
В кошику  од. на суму  грн.
GD2X20MPS12D GD2X20MPS12D.pdf
GD2X20MPS12D
Виробник: GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 39A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 39A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+895.88 грн
10+780.53 грн
25+749.37 грн
100+662.04 грн
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MSRT200120A
MSRT200120A
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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MSRT200140A
MSRT200140A
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.4KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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MSRT200100A MSRT20060%7E200100%28A%29.pdf
MSRT200100A
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1000V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT200160A
MSRT200160A
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT200120AD
MSRT200120AD
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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MSRT200100AD
MSRT200100AD
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1KV 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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MSRT200160AD
MSRT200160AD
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
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MSRT200140AD
MSRT200140AD
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.4KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
товару немає в наявності
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GD2X60MPS06N GD2X60MPS06N.pdf
GD2X60MPS06N
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SIC 650V 70A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 369 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2818.79 грн
10+2493.30 грн
25+2410.51 грн
100+2150.07 грн
250+2078.25 грн
В кошику  од. на суму  грн.
GB10SLT12-214
Виробник: GeneSiC Semiconductor
Description: SIC SCHOTTKY DIODE 1200V 10A
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MSRTA30080A
MSRTA30080A
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 800V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
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KBL403G KBL401G%7EKBL404G.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 4A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
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GBPC2510W gbpc2506t.pdf
GBPC2510W
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 291 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+309.13 грн
10+236.59 грн
25+216.04 грн
100+176.61 грн
250+161.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
GBPC2502W gbpc25005t.pdf
GBPC2502W
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 4011 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+309.13 грн
10+236.59 грн
25+216.04 грн
100+176.61 грн
250+161.25 грн
500+150.49 грн
1000+138.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1N1184A 1n1183a.pdf
1N1184A
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD 100V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+772.40 грн
10+622.42 грн
25+579.81 грн
100+488.73 грн
250+455.30 грн
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1N1186A 1n1183a.pdf
1N1186A
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD 200V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+753.66 грн
10+607.25 грн
25+565.71 грн
100+476.84 грн
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MSRT10060AD msrt10060ad.pdf
MSRT10060AD
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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KBPC5006W kbpc5006t.pdf
KBPC5006W
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
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GBU10B gbu10a.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE 1-PH GBU 100V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 7485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.00 грн
10+90.12 грн
25+78.56 грн
100+59.94 грн
250+52.32 грн
500+47.19 грн
1000+41.88 грн
2500+36.47 грн
Мінімальне замовлення: 3
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MSRTA400120A MSRTA400120%28A%29%7EMSRTA400160%28A%29.pdf
MSRTA400120A
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1200V 400A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 400A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 400 A
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
товару немає в наявності
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GD2X25MPS17N GD2X25MPS17N.pdf
GD2X25MPS17N
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SIC 1700V 50A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
на замовлення 92 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3666.13 грн
10+3244.48 грн
25+3137.54 грн
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GD2X150MPS06N GD2X150MPS06N.pdf
GD2X150MPS06N
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SIC 650V 150A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 325 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4677.83 грн
10+4163.27 грн
25+4035.08 грн
100+3611.32 грн
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1N3892 1n3889.pdf
1N3892
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD 400V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
на замовлення 88 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+757.92 грн
10+592.74 грн
25+545.44 грн
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MBR6045 mbr60100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
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1N1183A 1n1183a.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
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GBJ25J gbj25m.pdf
Виробник: GeneSiC Semiconductor
Description: 600V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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GBJ25G gbj25g.pdf
Виробник: GeneSiC Semiconductor
Description: 400V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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GBJ25D gbj25g.pdf
Виробник: GeneSiC Semiconductor
Description: 200V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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GBJ25M gbj25m.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 25A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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GBJ25B gbj25g.pdf
Виробник: GeneSiC Semiconductor
Description: 100V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N2133A 1n2133a.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 300V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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MUR5010 mur5005.pdf
MUR5010
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 100V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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MUR5020 mur5005.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 200V 50A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 50A
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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GBJ15K gbj15k.pdf
GBJ15K
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 15A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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1N1206A s12m.pdf
1N1206A
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD 600V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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1N1184R 1n1183.pdf
1N1184R
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD REV 100V 35A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 35A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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GBJ15D gbj15b.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 15A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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GBJ15G gbj15b.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 15A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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GBJ15B gbj15b.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 100V 15A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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GBJ15J gbj15k.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 15A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1N3671A 1n3671a.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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MSRT20060A MSRT20060%7E200100%28A%29.pdf
MSRT20060A
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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MSRT20060AD
MSRT20060AD
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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GBU10K gbu10j.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 800V 10A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 187 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.85 грн
10+90.78 грн
25+79.15 грн
100+60.40 грн
Мінімальне замовлення: 3
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KBPC2506W kbpc2506t.pdf
KBPC2506W
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 25A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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KBPC3502W kbpc35005t.pdf
KBPC3502W
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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KBPC35005W kbpc35005t.pdf
KBPC35005W
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 50V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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KBPC3501W kbpc35005t.pdf
KBPC3501W
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 100V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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KBPC3506W kbpc3506t.pdf
KBPC3506W
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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KBPC3508W kbpc3506t.pdf
KBPC3508W
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 35A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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KBU1010 kbu1006.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 10A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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KBPC2508W kbpc2506t.pdf
KBPC2508W
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 800V 25A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MBR6035 mbr6020.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 35V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
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GBU10A gbu10a.pdf
GBU10A
Виробник: GeneSiC Semiconductor
Description: BRIDGE 1-PH GBU 50V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 471 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.00 грн
10+90.12 грн
25+78.56 грн
100+59.94 грн
250+52.32 грн
Мінімальне замовлення: 3
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GBU10G gbu10a.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE 1-PH GBU 400V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.00 грн
10+90.12 грн
25+78.56 грн
100+59.94 грн
250+52.32 грн
500+47.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
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