Продукція > GENESIC SEMICONDUCTOR > Всі товари виробника GENESIC SEMICONDUCTOR (5817) > Сторінка 33 з 97

Обрати Сторінку:   [  << Попередня Сторінка ]  1 9 18 27 28 29 30 31 32 33 34 35 36 37 38 45 54 63 72 81 90 97  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
GD30MPS12J GeneSiC Semiconductor Description: 1200V 30A TO-263-7 SIC SCHOTTKY
на замовлення 266 шт:
термін постачання 21-31 дні (днів)
1+887.33 грн
10+768.79 грн
25+737.34 грн
100+649.51 грн
250+646.67 грн
В кошику  од. на суму  грн.
GC50MPS33H GC50MPS33H GeneSiC Semiconductor GC50MPS33H.pdf Description: DIODE SIL CARB 3.3KV 50A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
на замовлення 78 шт:
термін постачання 21-31 дні (днів)
1+18694.36 грн
10+17013.03 грн
25+16634.47 грн
В кошику  од. на суму  грн.
GE04MPS06E GE04MPS06E GeneSiC Semiconductor GE04MPS06E.pdf Description: DIODE SIL CARB 650V 11A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 186pF @ 1V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
на замовлення 2420 шт:
термін постачання 21-31 дні (днів)
3+131.31 грн
10+109.74 грн
25+103.76 грн
100+89.39 грн
250+84.50 грн
500+80.98 грн
1000+76.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GD60MPS17H GD60MPS17H GeneSiC Semiconductor GD60MPS17H.pdf Description: DIODE SIL CARB 1.7KV 122A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4577pF @ 1V, 1MHz
Current - Average Rectified (Io): 122A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 40 µA @ 1700 V
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
1+3386.17 грн
10+3015.91 грн
25+2923.97 грн
100+2617.84 грн
В кошику  од. на суму  грн.
GD10MPS12H GD10MPS12H GeneSiC Semiconductor GD10MPS12H.pdf Description: DIODE SIL CARB 1.2KV 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
1+356.52 грн
10+304.92 грн
25+290.29 грн
100+253.96 грн
250+242.32 грн
500+233.42 грн
В кошику  од. на суму  грн.
GD30MPS06A GD30MPS06A GeneSiC Semiconductor GD30MPS06A.pdf Description: DIODE SIL CARB 650V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
на замовлення 1744 шт:
термін постачання 21-31 дні (днів)
1+389.15 грн
10+333.05 грн
25+318.37 грн
100+278.06 грн
250+265.64 грн
500+256.67 грн
1000+243.64 грн
В кошику  од. на суму  грн.
GD2X30MPS12N GD2X30MPS12N GeneSiC Semiconductor GD2X30MPS12N.pdf Description: 1200V 60A SOT-227 SIC SCHOTTKY M
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
1+2767.03 грн
10+2446.99 грн
25+2365.16 грн
100+2151.21 грн
В кошику  од. на суму  грн.
G3R20MT17N G3R20MT17N GeneSiC Semiconductor G3R20MT17N.pdf Description: SIC MOSFET N-CH 100A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 523W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
1+10277.88 грн
10+9231.50 грн
25+8979.40 грн
В кошику  од. на суму  грн.
GD2X100MPS12N GD2X100MPS12N GeneSiC Semiconductor GD2X100MPS12N.pdf Description: DIODE MOD SIC 1200V 136A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 136A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
1+6286.10 грн
10+5578.38 грн
25+5399.38 грн
В кошику  од. на суму  грн.
G3R60MT07J GeneSiC Semiconductor G3R60MT07J.pdf Description: 750V 60M TO-263-7 G3R SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 750 V
на замовлення 1348 шт:
термін постачання 21-31 дні (днів)
1+776.71 грн
В кошику  од. на суму  грн.
G3R60MT07K G3R60MT07K GeneSiC Semiconductor G3R60MT07K.pdf Description: 750V 60M TO-247-4 G3R SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: TO-247-4
Part Status: Active
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 750 V
на замовлення 1079 шт:
термін постачання 21-31 дні (днів)
1+792.63 грн
10+692.54 грн
25+666.86 грн
100+590.70 грн
250+567.99 грн
500+552.15 грн
1000+527.53 грн
В кошику  од. на суму  грн.
G3R160MT17D G3R160MT17D GeneSiC Semiconductor G3R160MT17D.pdf Description: SIC MOSFET N-CH 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 1000 V
на замовлення 1018 шт:
термін постачання 21-31 дні (днів)
1+898.47 грн
10+782.50 грн
25+751.41 грн
100+664.03 грн
250+638.16 грн
500+618.92 грн
1000+590.51 грн
В кошику  од. на суму  грн.
G3R160MT17J G3R160MT17J GeneSiC Semiconductor G3R160MT17J.pdf Description: SIC MOSFET N-CH 18A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 854 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
G3R20MT12N G3R20MT12N GeneSiC Semiconductor G3R20MT12N.pdf Description: SIC MOSFET N-CH 105A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
на замовлення 63 шт:
термін постачання 21-31 дні (днів)
1+4263.95 грн
10+3783.93 грн
25+3662.65 грн
В кошику  од. на суму  грн.
GC05MPS33J GC05MPS33J GeneSiC Semiconductor sic-schottky-mps-selector-guide.pdf Description: DIODE SIL CARB 3300V 5A TO2637
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
товару немає в наявності
В кошику  од. на суму  грн.
GC05MPS12-220 GC05MPS12-220 GeneSiC Semiconductor GC05MPS12-220.pdf Description: DIODE SIL CARB 1200V 29A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 359pF @ 1V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
GBPC1506W GBPC1506W GeneSiC Semiconductor gbpc1506t.pdf Description: BRIDGE RECT 1P 600V 15A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
GD2X50MPS12N GD2X50MPS12N GeneSiC Semiconductor GD2X50MPS12N.pdf Description: DIODE MOD SIC 1200V 76A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 76A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
на замовлення 221 шт:
термін постачання 21-31 дні (днів)
1+3534.19 грн
10+3120.82 грн
25+3015.19 грн
100+2685.72 грн
В кошику  од. на суму  грн.
GD2X30MPS06D GD2X30MPS06D GeneSiC Semiconductor GD2X30MPS06D.pdf Description: DIODE ARR SIC 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
на замовлення 545 шт:
термін постачання 21-31 дні (днів)
1+712.25 грн
10+616.13 грн
25+590.54 грн
100+519.75 грн
250+498.12 грн
500+482.35 грн
В кошику  од. на суму  грн.
GD20MPS12A GD20MPS12A GeneSiC Semiconductor GD20MPS12A.pdf Description: DIODE SIL CARB 1200V 42A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 737pF @ 1V, 1MHz
Current - Average Rectified (Io): 42A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 2283 шт:
термін постачання 21-31 дні (днів)
1+446.45 грн
10+385.39 грн
25+368.55 грн
100+323.74 грн
250+309.83 грн
500+299.71 грн
1000+285.47 грн
В кошику  од. на суму  грн.
G3R12MT12K G3R12MT12K GeneSiC Semiconductor G3R12MT12K.pdf Description: 1200V 12M TO-247-4 G3R SIC MOSFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 157A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V
Power Dissipation (Max): 567W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 50mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V
на замовлення 466 шт:
термін постачання 21-31 дні (днів)
1+4338.75 грн
10+3890.30 грн
25+3781.16 грн
100+3399.27 грн
В кошику  од. на суму  грн.
GD60MPS06H GD60MPS06H GeneSiC Semiconductor GD60MPS06H.pdf Description: DIODE SIL CARB 650V 82A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1463pF @ 1V, 1MHz
Current - Average Rectified (Io): 82A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 804 шт:
термін постачання 21-31 дні (днів)
1+787.06 грн
10+681.50 грн
25+653.65 грн
100+576.25 грн
250+552.15 грн
500+534.94 грн
В кошику  од. на суму  грн.
GD2X30MPS12D GD2X30MPS12D GeneSiC Semiconductor GD2X30MPS12D.pdf Description: DIODE ARR SIC 1200V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 55A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 569 шт:
термін постачання 21-31 дні (днів)
1+1321.04 грн
10+1160.92 грн
25+1119.74 грн
100+994.26 грн
250+959.07 грн
500+932.85 грн
В кошику  од. на суму  грн.
GD30MPS12H GD30MPS12H GeneSiC Semiconductor GD30MPS12H.pdf Description: DIODE SIL CARB 1200V 55A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1101pF @ 1V, 1MHz
Current - Average Rectified (Io): 55A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 155 шт:
термін постачання 21-31 дні (днів)
1+691.56 грн
10+598.28 грн
25+573.37 грн
100+505.21 грн
В кошику  од. на суму  грн.
GD20MPS12H GD20MPS12H GeneSiC Semiconductor GD20MPS12H.pdf Description: DIODE SIL CARB 1200V 39A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 737pF @ 1V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 2914 шт:
термін постачання 21-31 дні (днів)
1+500.56 грн
10+432.52 грн
25+414.37 грн
100+364.84 грн
250+349.66 грн
500+338.91 грн
1000+322.79 грн
В кошику  од. на суму  грн.
GD2X20MPS12D GD2X20MPS12D GeneSiC Semiconductor GD2X20MPS12D.pdf Description: DIODE ARR SIC 1200V 39A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 39A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 193 шт:
термін постачання 21-31 дні (днів)
1+852.31 грн
10+742.50 грн
25+712.85 грн
100+629.77 грн
В кошику  од. на суму  грн.
MSRT200120A MSRT200120A GeneSiC Semiconductor Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT200140A MSRT200140A GeneSiC Semiconductor Description: DIODE MODULE GP 1.4KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT200100A MSRT200100A GeneSiC Semiconductor MSRT20060%7E200100%28A%29.pdf Description: DIODE MODULE GP 1KV 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT200160A MSRT200160A GeneSiC Semiconductor Description: DIODE MOD GP 1600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT200120AD MSRT200120AD GeneSiC Semiconductor Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT200100AD MSRT200100AD GeneSiC Semiconductor Description: DIODE MODULE GP 1KV 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT200160AD MSRT200160AD GeneSiC Semiconductor Description: DIODE MOD GP 1600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT200140AD MSRT200140AD GeneSiC Semiconductor Description: DIODE MODULE GP 1.4KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
товару немає в наявності
В кошику  од. на суму  грн.
GD2X60MPS06N GD2X60MPS06N GeneSiC Semiconductor GD2X60MPS06N.pdf Description: DIODE MOD SIC 650V 70A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 369 шт:
термін постачання 21-31 дні (днів)
1+2634.13 грн
10+2329.97 грн
25+2252.60 грн
100+2009.21 грн
250+1942.10 грн
В кошику  од. на суму  грн.
GB10SLT12-214 GeneSiC Semiconductor Description: SIC SCHOTTKY DIODE 1200V 10A
товару немає в наявності
В кошику  од. на суму  грн.
MSRTA30080A MSRTA30080A GeneSiC Semiconductor Description: DIODE MODULE GP 800V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRTA30080AD MSRTA30080AD GeneSiC Semiconductor Description: DIODE MODULE GP 800V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
KBL403G GeneSiC Semiconductor KBL401G%7EKBL404G.pdf Description: BRIDGE RECT 1PHASE 200V 4A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
GBPC2510W GBPC2510W GeneSiC Semiconductor gbpc2506t.pdf Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 629 шт:
термін постачання 21-31 дні (днів)
1+319.92 грн
10+245.00 грн
25+223.74 грн
100+182.92 грн
250+167.02 грн
500+155.87 грн
В кошику  од. на суму  грн.
GBU8G GBU8G GeneSiC Semiconductor gbu8a.pdf Description: BRIDGE RECT 1PHASE 400V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 7477 шт:
термін постачання 21-31 дні (днів)
3+118.58 грн
10+80.77 грн
25+70.17 грн
100+53.25 грн
250+46.27 грн
500+41.62 грн
1000+36.83 грн
2500+31.98 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBPC2502W GBPC2502W GeneSiC Semiconductor gbpc25005t.pdf Description: BRIDGE RECT 1P 200V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 4077 шт:
термін постачання 21-31 дні (днів)
2+292.86 грн
10+224.15 грн
25+204.70 грн
100+167.35 грн
250+152.80 грн
500+142.60 грн
1000+130.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1N1184A 1N1184A GeneSiC Semiconductor 1n1183a.pdf Description: DIODE STANDARD 100V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
1+721.80 грн
10+581.65 грн
25+541.83 грн
100+456.71 грн
250+425.47 грн
В кошику  од. на суму  грн.
1N1186A 1N1186A GeneSiC Semiconductor 1n1183a.pdf Description: DIODE STANDARD 200V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 679 шт:
термін постачання 21-31 дні (днів)
1+721.80 грн
10+581.65 грн
25+541.83 грн
100+456.71 грн
250+425.47 грн
500+403.22 грн
В кошику  од. на суму  грн.
MSRT10060AD MSRT10060AD GeneSiC Semiconductor msrt10060ad.pdf Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
KBP201G KBP201G GeneSiC Semiconductor kbp201g.pdf Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
KBPC5006W KBPC5006W GeneSiC Semiconductor kbpc5006t.pdf Description: BRIDGE RECT 1P 600V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
GBU10B GeneSiC Semiconductor gbu10a.pdf Description: BRIDGE 1-PH GBU 100V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 7485 шт:
термін постачання 21-31 дні (днів)
3+123.35 грн
10+84.22 грн
25+73.41 грн
100+56.02 грн
250+48.90 грн
500+44.10 грн
1000+39.13 грн
2500+34.08 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MSRTA400120A MSRTA400120A GeneSiC Semiconductor MSRTA400120(A)~MSRTA400160(A).pdf Description: DIODE MODULE 1.2KV 400A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
GD2X25MPS17N GD2X25MPS17N GeneSiC Semiconductor GD2X25MPS17N.pdf Description: DIODE MOD SIC 1700V 50A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
на замовлення 158 шт:
термін постачання 21-31 дні (днів)
1+3847.74 грн
10+3405.44 грн
25+3293.22 грн
100+2937.02 грн
В кошику  од. на суму  грн.
GD2X150MPS06N GD2X150MPS06N GeneSiC Semiconductor GD2X150MPS06N.pdf Description: DIODE MOD SIC 650V 150A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 352 шт:
термін постачання 21-31 дні (днів)
1+4668.22 грн
10+4154.99 грн
25+4027.03 грн
100+3604.09 грн
В кошику  од. на суму  грн.
GBU8D GBU8D GeneSiC Semiconductor gbu8a.pdf Description: BRIDGE RECT 1PHASE 200V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 5523 шт:
термін постачання 21-31 дні (днів)
3+118.58 грн
10+80.77 грн
25+70.17 грн
100+53.25 грн
250+46.27 грн
500+41.62 грн
1000+36.83 грн
2500+31.98 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1N3892 1N3892 GeneSiC Semiconductor 1n3889.pdf Description: DIODE STANDARD 400V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
на замовлення 88 шт:
термін постачання 21-31 дні (днів)
1+708.27 грн
10+553.91 грн
25+509.70 грн
В кошику  од. на суму  грн.
MBR6045 GeneSiC Semiconductor mbr60100.pdf Description: DIODE SCHOTTKY 45V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
KBP206 GeneSiC Semiconductor KBP206%7EKBP210.pdf Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
1N1183A GeneSiC Semiconductor 1n1183a.pdf Description: DIODE GEN PURP 50V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
GBJ25J GeneSiC Semiconductor gbj25m.pdf Description: 600V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
GBJ25G GeneSiC Semiconductor gbj25g.pdf Description: 400V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GBJ25D GeneSiC Semiconductor gbj25g.pdf Description: 200V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
GBJ25M GeneSiC Semiconductor gbj25m.pdf Description: BRIDGE RECT 1PHASE 1KV 25A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
GD30MPS12J
Виробник: GeneSiC Semiconductor
Description: 1200V 30A TO-263-7 SIC SCHOTTKY
на замовлення 266 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+887.33 грн
10+768.79 грн
25+737.34 грн
100+649.51 грн
250+646.67 грн
В кошику  од. на суму  грн.
GC50MPS33H GC50MPS33H.pdf
GC50MPS33H
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 3.3KV 50A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
на замовлення 78 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+18694.36 грн
10+17013.03 грн
25+16634.47 грн
В кошику  од. на суму  грн.
GE04MPS06E GE04MPS06E.pdf
GE04MPS06E
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 11A TO252-2
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 186pF @ 1V, 1MHz
Current - Average Rectified (Io): 11A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
на замовлення 2420 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+131.31 грн
10+109.74 грн
25+103.76 грн
100+89.39 грн
250+84.50 грн
500+80.98 грн
1000+76.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GD60MPS17H GD60MPS17H.pdf
GD60MPS17H
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.7KV 122A TO247
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4577pF @ 1V, 1MHz
Current - Average Rectified (Io): 122A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 40 µA @ 1700 V
на замовлення 170 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3386.17 грн
10+3015.91 грн
25+2923.97 грн
100+2617.84 грн
В кошику  од. на суму  грн.
GD10MPS12H GD10MPS12H.pdf
GD10MPS12H
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1.2KV 10A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+356.52 грн
10+304.92 грн
25+290.29 грн
100+253.96 грн
250+242.32 грн
500+233.42 грн
В кошику  од. на суму  грн.
GD30MPS06A GD30MPS06A.pdf
GD30MPS06A
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 30A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
на замовлення 1744 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+389.15 грн
10+333.05 грн
25+318.37 грн
100+278.06 грн
250+265.64 грн
500+256.67 грн
1000+243.64 грн
В кошику  од. на суму  грн.
GD2X30MPS12N GD2X30MPS12N.pdf
GD2X30MPS12N
Виробник: GeneSiC Semiconductor
Description: 1200V 60A SOT-227 SIC SCHOTTKY M
на замовлення 440 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2767.03 грн
10+2446.99 грн
25+2365.16 грн
100+2151.21 грн
В кошику  од. на суму  грн.
G3R20MT17N G3R20MT17N.pdf
G3R20MT17N
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 100A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 75A, 15V
Power Dissipation (Max): 523W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 15mA
Supplier Device Package: SOT-227
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 10187 pF @ 1000 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10277.88 грн
10+9231.50 грн
25+8979.40 грн
В кошику  од. на суму  грн.
GD2X100MPS12N GD2X100MPS12N.pdf
GD2X100MPS12N
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SIC 1200V 136A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 136A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6286.10 грн
10+5578.38 грн
25+5399.38 грн
В кошику  од. на суму  грн.
G3R60MT07J G3R60MT07J.pdf
Виробник: GeneSiC Semiconductor
Description: 750V 60M TO-263-7 G3R SIC MOSFET
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: TO-263-7
Part Status: Active
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 750 V
на замовлення 1348 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+776.71 грн
В кошику  од. на суму  грн.
G3R60MT07K G3R60MT07K.pdf
G3R60MT07K
Виробник: GeneSiC Semiconductor
Description: 750V 60M TO-247-4 G3R SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: TO-247-4
Part Status: Active
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 750 V
на замовлення 1079 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+792.63 грн
10+692.54 грн
25+666.86 грн
100+590.70 грн
250+567.99 грн
500+552.15 грн
1000+527.53 грн
В кошику  од. на суму  грн.
G3R160MT17D G3R160MT17D.pdf
G3R160MT17D
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 21A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1272 pF @ 1000 V
на замовлення 1018 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+898.47 грн
10+782.50 грн
25+751.41 грн
100+664.03 грн
250+638.16 грн
500+618.92 грн
1000+590.51 грн
В кошику  од. на суму  грн.
G3R160MT17J G3R160MT17J.pdf
G3R160MT17J
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 18A TO263-7
Packaging: Tube
Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 208mOhm @ 12A, 15V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 5mA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 854 pF @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
G3R20MT12N G3R20MT12N.pdf
G3R20MT12N
Виробник: GeneSiC Semiconductor
Description: SIC MOSFET N-CH 105A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 60A, 15V
Power Dissipation (Max): 365W (Tc)
Vgs(th) (Max) @ Id: 2.69V @ 15mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +20V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 219 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 5873 pF @ 800 V
на замовлення 63 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4263.95 грн
10+3783.93 грн
25+3662.65 грн
В кошику  од. на суму  грн.
GC05MPS33J sic-schottky-mps-selector-guide.pdf
GC05MPS33J
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 3300V 5A TO2637
Packaging: Tube
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-263-7
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 3300 V
товару немає в наявності
В кошику  од. на суму  грн.
GC05MPS12-220 GC05MPS12-220.pdf
GC05MPS12-220
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 29A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 359pF @ 1V, 1MHz
Current - Average Rectified (Io): 29A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Current - Reverse Leakage @ Vr: 4 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
GBPC1506W gbpc1506t.pdf
GBPC1506W
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 15A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 15 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
GD2X50MPS12N GD2X50MPS12N.pdf
GD2X50MPS12N
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SIC 1200V 76A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 76A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 15 µA @ 1200 V
на замовлення 221 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3534.19 грн
10+3120.82 грн
25+3015.19 грн
100+2685.72 грн
В кошику  од. на суму  грн.
GD2X30MPS06D GD2X30MPS06D.pdf
GD2X30MPS06D
Виробник: GeneSiC Semiconductor
Description: DIODE ARR SIC 600V 30A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
на замовлення 545 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+712.25 грн
10+616.13 грн
25+590.54 грн
100+519.75 грн
250+498.12 грн
500+482.35 грн
В кошику  од. на суму  грн.
GD20MPS12A GD20MPS12A.pdf
GD20MPS12A
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 42A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 737pF @ 1V, 1MHz
Current - Average Rectified (Io): 42A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 2283 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+446.45 грн
10+385.39 грн
25+368.55 грн
100+323.74 грн
250+309.83 грн
500+299.71 грн
1000+285.47 грн
В кошику  од. на суму  грн.
G3R12MT12K G3R12MT12K.pdf
G3R12MT12K
Виробник: GeneSiC Semiconductor
Description: 1200V 12M TO-247-4 G3R SIC MOSFE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 157A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 100A, 18V
Power Dissipation (Max): 567W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 50mA
Supplier Device Package: TO-247-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 288 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 9335 pF @ 800 V
на замовлення 466 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4338.75 грн
10+3890.30 грн
25+3781.16 грн
100+3399.27 грн
В кошику  од. на суму  грн.
GD60MPS06H GD60MPS06H.pdf
GD60MPS06H
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 650V 82A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1463pF @ 1V, 1MHz
Current - Average Rectified (Io): 82A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 804 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+787.06 грн
10+681.50 грн
25+653.65 грн
100+576.25 грн
250+552.15 грн
500+534.94 грн
В кошику  од. на суму  грн.
GD2X30MPS12D GD2X30MPS12D.pdf
GD2X30MPS12D
Виробник: GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 55A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 55A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 569 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1321.04 грн
10+1160.92 грн
25+1119.74 грн
100+994.26 грн
250+959.07 грн
500+932.85 грн
В кошику  од. на суму  грн.
GD30MPS12H GD30MPS12H.pdf
GD30MPS12H
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 55A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1101pF @ 1V, 1MHz
Current - Average Rectified (Io): 55A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
на замовлення 155 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+691.56 грн
10+598.28 грн
25+573.37 грн
100+505.21 грн
В кошику  од. на суму  грн.
GD20MPS12H GD20MPS12H.pdf
GD20MPS12H
Виробник: GeneSiC Semiconductor
Description: DIODE SIL CARB 1200V 39A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 737pF @ 1V, 1MHz
Current - Average Rectified (Io): 39A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 2914 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+500.56 грн
10+432.52 грн
25+414.37 грн
100+364.84 грн
250+349.66 грн
500+338.91 грн
1000+322.79 грн
В кошику  од. на суму  грн.
GD2X20MPS12D GD2X20MPS12D.pdf
GD2X20MPS12D
Виробник: GeneSiC Semiconductor
Description: DIODE ARR SIC 1200V 39A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 39A (DC)
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
на замовлення 193 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+852.31 грн
10+742.50 грн
25+712.85 грн
100+629.77 грн
В кошику  од. на суму  грн.
MSRT200120A
MSRT200120A
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT200140A
MSRT200140A
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.4KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT200100A MSRT20060%7E200100%28A%29.pdf
MSRT200100A
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1KV 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT200160A
MSRT200160A
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT200120AD
MSRT200120AD
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.2KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT200100AD
MSRT200100AD
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1KV 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT200160AD
MSRT200160AD
Виробник: GeneSiC Semiconductor
Description: DIODE MOD GP 1600V 200A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1600 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRT200140AD
MSRT200140AD
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 1.4KV 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Current - Reverse Leakage @ Vr: 10 µA @ 1400 V
товару немає в наявності
В кошику  од. на суму  грн.
GD2X60MPS06N GD2X60MPS06N.pdf
GD2X60MPS06N
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SIC 650V 70A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 70A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 369 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2634.13 грн
10+2329.97 грн
25+2252.60 грн
100+2009.21 грн
250+1942.10 грн
В кошику  од. на суму  грн.
GB10SLT12-214
Виробник: GeneSiC Semiconductor
Description: SIC SCHOTTKY DIODE 1200V 10A
товару немає в наявності
В кошику  од. на суму  грн.
MSRTA30080A
MSRTA30080A
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 800V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A (DC)
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 300 A
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
MSRTA30080AD
MSRTA30080AD
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 800V 300A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 300A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 A
Current - Reverse Leakage @ Vr: 20 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
KBL403G KBL401G%7EKBL404G.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 4A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
GBPC2510W gbpc2506t.pdf
GBPC2510W
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 629 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+319.92 грн
10+245.00 грн
25+223.74 грн
100+182.92 грн
250+167.02 грн
500+155.87 грн
В кошику  од. на суму  грн.
GBU8G gbu8a.pdf
GBU8G
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 400V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 7477 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+118.58 грн
10+80.77 грн
25+70.17 грн
100+53.25 грн
250+46.27 грн
500+41.62 грн
1000+36.83 грн
2500+31.98 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
GBPC2502W gbpc25005t.pdf
GBPC2502W
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 200V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 4077 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+292.86 грн
10+224.15 грн
25+204.70 грн
100+167.35 грн
250+152.80 грн
500+142.60 грн
1000+130.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
1N1184A 1n1183a.pdf
1N1184A
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD 100V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 256 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+721.80 грн
10+581.65 грн
25+541.83 грн
100+456.71 грн
250+425.47 грн
В кошику  од. на суму  грн.
1N1186A 1n1183a.pdf
1N1186A
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD 200V 40A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 190°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
на замовлення 679 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+721.80 грн
10+581.65 грн
25+541.83 грн
100+456.71 грн
250+425.47 грн
500+403.22 грн
В кошику  од. на суму  грн.
MSRT10060AD msrt10060ad.pdf
MSRT10060AD
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE GP 600V 100A 3TOWER
Packaging: Bulk
Package / Case: Three Tower
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Three Tower
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
KBP201G kbp201g.pdf
KBP201G
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 50V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 50 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
KBPC5006W kbpc5006t.pdf
KBPC5006W
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1P 600V 50A KBPC-W
Packaging: Bulk
Package / Case: 4-Square, KBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
GBU10B gbu10a.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE 1-PH GBU 100V 10A 150C
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 10 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
на замовлення 7485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+123.35 грн
10+84.22 грн
25+73.41 грн
100+56.02 грн
250+48.90 грн
500+44.10 грн
1000+39.13 грн
2500+34.08 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
MSRTA400120A MSRTA400120(A)~MSRTA400160(A).pdf
MSRTA400120A
Виробник: GeneSiC Semiconductor
Description: DIODE MODULE 1.2KV 400A 3TOWER
товару немає в наявності
В кошику  од. на суму  грн.
GD2X25MPS17N GD2X25MPS17N.pdf
GD2X25MPS17N
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SIC 1700V 50A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 50A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1700 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 1700 V
на замовлення 158 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3847.74 грн
10+3405.44 грн
25+3293.22 грн
100+2937.02 грн
В кошику  од. на суму  грн.
GD2X150MPS06N GD2X150MPS06N.pdf
GD2X150MPS06N
Виробник: GeneSiC Semiconductor
Description: DIODE MOD SIC 650V 150A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 150A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
на замовлення 352 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4668.22 грн
10+4154.99 грн
25+4027.03 грн
100+3604.09 грн
В кошику  од. на суму  грн.
GBU8D gbu8a.pdf
GBU8D
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 200V 8A GBU
Packaging: Bulk
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 5523 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+118.58 грн
10+80.77 грн
25+70.17 грн
100+53.25 грн
250+46.27 грн
500+41.62 грн
1000+36.83 грн
2500+31.98 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
1N3892 1n3889.pdf
1N3892
Виробник: GeneSiC Semiconductor
Description: DIODE STANDARD 400V 12A DO4
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 12 A
Current - Reverse Leakage @ Vr: 25 µA @ 50 V
на замовлення 88 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+708.27 грн
10+553.91 грн
25+509.70 грн
В кошику  од. на суму  грн.
MBR6045 mbr60100.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE SCHOTTKY 45V 60A DO5
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 60A
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 60 A
Current - Reverse Leakage @ Vr: 5 mA @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
KBP206 KBP206%7EKBP210.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 600V 2A KBP
Packaging: Bulk
Package / Case: 4-SIP, KBP
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBP
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 2 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
1N1183A 1n1183a.pdf
Виробник: GeneSiC Semiconductor
Description: DIODE GEN PURP 50V 40A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 40 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
GBJ25J gbj25m.pdf
Виробник: GeneSiC Semiconductor
Description: 600V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
GBJ25G gbj25g.pdf
Виробник: GeneSiC Semiconductor
Description: 400V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
GBJ25D gbj25g.pdf
Виробник: GeneSiC Semiconductor
Description: 200V 25A GBJ SINGLE PHASE BRIDGE
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
GBJ25M gbj25m.pdf
Виробник: GeneSiC Semiconductor
Description: BRIDGE RECT 1PHASE 1KV 25A GBJ
Packaging: Bulk
Package / Case: 4-SIP, GBJ
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBJ
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 9 18 27 28 29 30 31 32 33 34 35 36 37 38 45 54 63 72 81 90 97  [ Наступна Сторінка >> ]