Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117869) > Сторінка 146 з 1965

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CY14B104K-ZS45XI CY14B104K-ZS45XI Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1512KV18-300BZXI CY7C1512KV18-300BZXI Infineon Technologies CY7C1510%2C2%2C4%2C25KV18.pdf Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1514KV18-333BZXI CY7C1514KV18-333BZXI Infineon Technologies CY7C1510%2C2%2C4%2C25KV18.pdf Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1515KV18-300BZXI CY7C1515KV18-300BZXI Infineon Technologies Infineon-CY7C1526KV18_CY7C1513KV18_CY7C1515KV18_72-Mbit_QDR(R)_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe15e1314b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1518KV18-333BZC CY7C1518KV18-333BZC Infineon Technologies Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611 Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1518KV18-333BZXC CY7C1518KV18-333BZXC Infineon Technologies Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611 Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1520KV18-300BZXI CY7C1520KV18-300BZXI Infineon Technologies Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611 Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
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CY7C1545KV18-400BZXI CY7C1545KV18-400BZXI Infineon Technologies download Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1568KV18-400BZC CY7C1568KV18-400BZC Infineon Technologies download Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1568KV18-450BZXC CY7C1568KV18-450BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1568KV18-450BZXI CY7C1568KV18-450BZXI Infineon Technologies CY7C1568%2C70KV18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1568KV18-500BZXI CY7C1568KV18-500BZXI Infineon Technologies CY7C1568%2C70KV18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1568KV18-550BZXI CY7C1568KV18-550BZXI Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1570KV18-400BZXI CY7C1570KV18-400BZXI Infineon Technologies CY7C1568%2C70KV18.pdf Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1570KV18-450BZC CY7C1570KV18-450BZC Infineon Technologies CY7C1568%2C70KV18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1570KV18-500BZC CY7C1570KV18-500BZC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
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CY7C1570KV18-500BZXC CY7C1570KV18-500BZXC Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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IRFH5250TR2PBF IRFH5250TR2PBF Infineon Technologies irfh5250pbf.pdf?fileId=5546d462533600a40153561b2c791eb8 Description: MOSFET N-CH 25V 45A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
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IRFH5300TR2PBF IRFH5300TR2PBF Infineon Technologies irfh5300pbf.pdf?fileId=5546d462533600a40153561b3e141ebc Description: MOSFET N-CH 30V 40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
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IRFH5250TRPBF IRFH5250TRPBF Infineon Technologies irfh5250pbf.pdf?fileId=5546d462533600a40153561b2c791eb8 Description: MOSFET N-CH 25V 45A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
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IRFH5300TRPBF IRFH5300TRPBF Infineon Technologies irfh5300pbf.pdf?fileId=5546d462533600a40153561b3e141ebc Description: MOSFET N-CH 30V 40A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+33.82 грн
Мінімальне замовлення: 4000
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ITS5215LCUMA1 ITS5215LCUMA1 Infineon Technologies Infineon-ITS5215L-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428dba73e98&ack=t Description: IC PWR SWITCH N-CHAN 1:1 DSO-12
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-9
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1000+107.74 грн
2000+101.18 грн
3000+99.90 грн
Мінімальне замовлення: 1000
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ITS5215LCUMA1 ITS5215LCUMA1 Infineon Technologies Infineon-ITS5215L-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428dba73e98&ack=t Description: IC PWR SWITCH N-CHAN 1:1 DSO-12
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-9
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 3495 шт:
термін постачання 21-31 дні (днів)
2+196.88 грн
10+142.15 грн
25+130.13 грн
100+109.75 грн
250+103.85 грн
500+100.29 грн
Мінімальне замовлення: 2
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BTS149NKSA1 BTS149NKSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC PWR SWITCH N-CHAN 1:1 TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 14mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 19A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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BTS949NKSA1 BTS949NKSA1 Infineon Technologies BTS949.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO220-5
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 14mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 19A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-5-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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IPP023NE7N3GXKSA1 IPP023NE7N3GXKSA1 Infineon Technologies Infineon-IPP023NE7N3+G-DS-v02_11-EN.pdf?fileId=5546d4624fb7fef2014ff58007437938 Description: MOSFET N-CH 75V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
на замовлення 760 шт:
термін постачання 21-31 дні (днів)
2+298.85 грн
50+182.91 грн
100+180.70 грн
500+164.71 грн
Мінімальне замовлення: 2
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IPP023NE7N3 G IPP023NE7N3 G Infineon Technologies Description: MOSFET N-CH 75V 120A TO220
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BSC017N04NSGATMA1 BSC017N04NSGATMA1 Infineon Technologies BSC017N04NSG_rev1.24.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304318a6cd680118efe5d5a60236 Description: MOSFET N-CH 40V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC026N02KSGAUMA1 BSC026N02KSGAUMA1 Infineon Technologies BSC026N02KS+G+Rev1.05.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a3043163797a6011637c2a4280019 Description: MOSFET N-CH 20V 25A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC027N04LSGATMA1 BSC027N04LSGATMA1 Infineon Technologies BSC027N04LSG_rev1.04.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c4323646080c Description: MOSFET N-CH 40V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 49µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V
на замовлення 414 шт:
термін постачання 21-31 дні (днів)
3+106.68 грн
10+64.73 грн
100+43.05 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC028N06LS3GATMA1 BSC028N06LS3GATMA1 Infineon Technologies BSC028N06LS3_rev2.2.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebafa4c607f8c Description: MOSFET N-CH 60V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
на замовлення 17559 шт:
термін постачання 21-31 дні (днів)
2+233.75 грн
10+146.23 грн
100+101.37 грн
500+77.12 грн
1000+73.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC030N04NSGATMA1 BSC030N04NSGATMA1 Infineon Technologies BSC030N04NSG_rev1.04.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c45f30440837 Description: MOSFET N-CH 40V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 49µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 20 V
на замовлення 4421 шт:
термін постачання 21-31 дні (днів)
4+100.40 грн
10+61.03 грн
100+40.70 грн
500+29.98 грн
1000+27.34 грн
2000+25.11 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC031N06NS3GATMA1 BSC031N06NS3GATMA1 Infineon Technologies BSC031N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebaff49fa7fa6 Description: MOSFET N-CH 60V 100A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
на замовлення 8318 шт:
термін постачання 21-31 дні (днів)
2+221.98 грн
10+138.60 грн
100+95.74 грн
500+72.66 грн
1000+68.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC046N02KSGAUMA1 BSC046N02KSGAUMA1 Infineon Technologies BSC046N02KS+G+Rev1.05.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a3043163797a6011637c34414001c Description: MOSFET N-CH 20V 19A/80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
на замовлення 4773 шт:
термін постачання 21-31 дні (днів)
2+160.80 грн
10+99.10 грн
100+67.32 грн
500+50.40 грн
1000+46.29 грн
2000+42.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC054N04NSGATMA1 BSC054N04NSGATMA1 Infineon Technologies BSC054N04NSG_rev1.04.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c46167a0083c Description: MOSFET N-CH 40V 17A/81A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 27µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V
на замовлення 6967 шт:
термін постачання 21-31 дні (днів)
4+89.42 грн
10+54.08 грн
100+35.62 грн
500+26.00 грн
1000+23.60 грн
2000+21.59 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC057N08NS3GATMA1 BSC057N08NS3GATMA1 Infineon Technologies BSC057N08NS3G_rev2.4.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae803c9345616 Description: MOSFET N-CH 80V 16A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V
на замовлення 75874 шт:
термін постачання 21-31 дні (днів)
2+189.04 грн
10+117.46 грн
100+80.55 грн
500+60.77 грн
1000+56.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC060N10NS3GATMA1 BSC060N10NS3GATMA1 Infineon Technologies BSC060N10NS3+Rev2.4.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1aab7f90133a Description: MOSFET N-CH 100V 14.9/90A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
на замовлення 11816 шт:
термін постачання 21-31 дні (днів)
2+171.78 грн
10+106.28 грн
100+72.81 грн
500+54.91 грн
1000+54.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC072N03LDGATMA1 BSC072N03LDGATMA1 Infineon Technologies BSC072N03LDG.pdf Description: MOSFET 2N-CH 30V 11.5A 8TDSON
товару немає в наявності
В кошику  од. на суму  грн.
BSC080P03LSGAUMA1 BSC080P03LSGAUMA1 Infineon Technologies BSC080P03LS+G_Rev1.03.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304314dca38901154a7800621a6c Description: MOSFET P-CH 30V 16A/30A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 122.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2+237.67 грн
10+148.88 грн
100+103.24 грн
500+78.58 грн
1000+72.70 грн
2000+67.75 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC093N04LSGATMA1 BSC093N04LSGATMA1 Infineon Technologies BSC093N04LSG_rev1.04.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c44a1fa80822 Description: MOSFET N-CH 40V 13A/49A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
на замовлення 17107 шт:
термін постачання 21-31 дні (днів)
6+61.97 грн
10+37.01 грн
100+24.09 грн
500+17.37 грн
1000+15.68 грн
2000+14.26 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSC100N06LS3GATMA1 BSC100N06LS3GATMA1 Infineon Technologies BSC100N06LS3_rev2.2.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb0823387fd7 Description: MOSFET N-CH 60V 12A/50A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
на замовлення 3953 шт:
термін постачання 21-31 дні (днів)
3+113.74 грн
10+69.11 грн
100+46.26 грн
500+34.21 грн
1000+31.24 грн
2000+30.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC110N06NS3GATMA1 BSC110N06NS3GATMA1 Infineon Technologies BSC110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb0be43c7fe6 Description: MOSFET N-CH 60V 50A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 23µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
на замовлення 1789 шт:
термін постачання 21-31 дні (днів)
4+95.70 грн
10+58.09 грн
100+38.57 грн
500+28.31 грн
1000+25.77 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC123N08NS3GATMA1 BSC123N08NS3GATMA1 Infineon Technologies BSC123N08NS3G_rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae80eb8555625 Description: MOSFET N-CH 80V 11A/55A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 40 V
на замовлення 12898 шт:
термін постачання 21-31 дні (днів)
3+140.41 грн
10+86.18 грн
100+58.12 грн
500+43.26 грн
1000+39.63 грн
2000+37.69 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC150N03LDGATMA1 BSC150N03LDGATMA1 Infineon Technologies BSC150N03LD_rev1.4.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304316f66ee80116fb504a5d729f Description: MOSFET 2N-CH 30V 8A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
на замовлення 49295 шт:
термін постачання 21-31 дні (днів)
4+91.77 грн
10+55.44 грн
100+36.57 грн
500+26.71 грн
1000+24.26 грн
2000+22.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC190N15NS3GATMA1 BSC190N15NS3GATMA1 Infineon Technologies BSC190N15NS3_Rev2.4.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431d8a6b3c011d8bf2fcf30076 Description: MOSFET N-CH 150V 50A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 75 V
на замовлення 14695 шт:
термін постачання 21-31 дні (днів)
2+185.90 грн
10+115.64 грн
100+79.64 грн
500+61.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC340N08NS3GATMA1 BSC340N08NS3GATMA1 Infineon Technologies BSC340N08NS3G_rev2.6.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae81c21f2563a Description: MOSFET N-CH 80V 7A/23A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 40 V
на замовлення 13753 шт:
термін постачання 21-31 дні (днів)
4+93.34 грн
10+56.35 грн
100+37.22 грн
500+27.21 грн
1000+24.72 грн
2000+22.63 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSD235C L6327 BSD235C L6327 Infineon Technologies BSD235C_rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433580b371013585a2d0d53326 Description: MOSFET N/P-CH 20V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA
Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Supplier Device Package: PG-SOT363-PO
товару немає в наявності
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BSL316CL6327HTSA1 BSL316CL6327HTSA1 Infineon Technologies BSL316C_rev2.1.pdf?folderId=db3a30431add1d95011aed428f2d0285&fileId=db3a30431add1d95011aed6aee7702ee Description: MOSFET N/P-CH 30V TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
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BSO220N03MDGXUMA1 BSO220N03MDGXUMA1 Infineon Technologies BSO220N03MD_rev1.1.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d922ec17e5c Description: MOSFET 2N-CH 30V 6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
на замовлення 8052 шт:
термін постачання 21-31 дні (днів)
4+79.22 грн
10+47.89 грн
100+31.47 грн
500+22.91 грн
1000+20.78 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSP452HUMA1 BSP452HUMA1 Infineon Technologies Infineon-BSP452-DS-v01_00-en.pdf?folderId=db3a304314dca389011537739e37155f&fileId=db3a30431b3e89eb011b7eac4d321531&ack=t Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 59328 шт:
термін постачання 21-31 дні (днів)
2+170.21 грн
10+121.68 грн
25+111.06 грн
100+93.25 грн
250+88.02 грн
500+84.87 грн
1000+80.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSP742RXUMA1 BSP742RXUMA1 Infineon Technologies Infineon-BSP742R-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aae0b5fd54c4d Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 36019 шт:
термін постачання 21-31 дні (днів)
4+103.54 грн
10+73.04 грн
25+66.32 грн
100+55.27 грн
250+51.95 грн
500+49.96 грн
1000+47.52 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSP742RIXUMA1 BSP742RIXUMA1 Infineon Technologies Infineon-BSP742RI-DS-v01_01-en.pdf?folderId=db3a304314dca389011537739e37155f&fileId=db3a304316f112290116f22466b271a6&ack=t Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-6
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 5902 шт:
термін постачання 21-31 дні (днів)
3+120.01 грн
10+84.82 грн
25+77.10 грн
100+64.46 грн
250+60.68 грн
500+58.41 грн
1000+55.61 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSP752TXUMA1 BSP752TXUMA1 Infineon Technologies Infineon-BSP752T-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a8533f0fa778a Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 4973 шт:
термін постачання 21-31 дні (днів)
3+129.42 грн
10+91.55 грн
25+83.33 грн
100+69.77 грн
250+65.75 грн
500+63.32 грн
1000+60.32 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSP75NHUMA1 BSP75NHUMA1 Infineon Technologies Infineon-BSP75N-DS-v01_04-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f471f5a0256d1&ack=t Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Not For New Designs
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BSP76E6433HUMA1 BSP76E6433HUMA1 Infineon Technologies Infineon-BSP76-DS-v01_03-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043271faefd01274d00e2695d45&ack=t Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 12252 шт:
термін постачання 21-31 дні (днів)
4+97.26 грн
10+67.98 грн
25+61.64 грн
100+51.31 грн
250+48.19 грн
500+46.32 грн
1000+44.04 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSP77E6433HUMA1 BSP77E6433HUMA1 Infineon Technologies Infineon-BSP77%20E6433-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aaddd9fa44c3d Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.17A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 14213 шт:
термін постачання 21-31 дні (днів)
3+111.38 грн
10+78.25 грн
25+71.12 грн
100+59.35 грн
250+55.82 грн
500+53.70 грн
1000+51.10 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSP78HUMA1 BSP78HUMA1 Infineon Technologies Infineon-BSP78-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aaddd91c74c39 Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 11607 шт:
термін постачання 21-31 дні (днів)
3+123.15 грн
10+87.32 грн
25+79.49 грн
100+66.46 грн
250+62.59 грн
500+60.25 грн
1000+57.37 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSR202NL6327HTSA1 BSR202NL6327HTSA1 Infineon Technologies BSR202N_Rev1.06.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043156fd573011622e5576e1f72 Description: MOSFET N-CH 20V 3.8A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Qualification: AEC-Q101
на замовлення 1585 шт:
термін постачання 21-31 дні (днів)
7+50.99 грн
10+30.52 грн
100+19.71 грн
500+14.11 грн
1000+12.70 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BSS215PL6327HTSA1 BSS215PL6327HTSA1 Infineon Technologies BSS215P.pdf Description: MOSFET P-CH 20V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V
товару немає в наявності
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BSS315PL6327HTSA1 BSS315PL6327HTSA1 Infineon Technologies BSS315P.pdf Description: MOSFET P-CH 30V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 15 V
товару немає в наявності
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CY14B104K-ZS45XI download
CY14B104K-ZS45XI
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY7C1512KV18-300BZXI CY7C1510%2C2%2C4%2C25KV18.pdf
CY7C1512KV18-300BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1514KV18-333BZXI CY7C1510%2C2%2C4%2C25KV18.pdf
CY7C1514KV18-333BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1515KV18-300BZXI Infineon-CY7C1526KV18_CY7C1513KV18_CY7C1515KV18_72-Mbit_QDR(R)_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v24_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe15e1314b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1515KV18-300BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1518KV18-333BZC Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611
CY7C1518KV18-333BZC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1518KV18-333BZXC Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611
CY7C1518KV18-333BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1520KV18-300BZXI Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611
CY7C1520KV18-300BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
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CY7C1545KV18-400BZXI download
CY7C1545KV18-400BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1568KV18-400BZC download
CY7C1568KV18-400BZC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1568KV18-450BZXC download
CY7C1568KV18-450BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1568KV18-450BZXI CY7C1568%2C70KV18.pdf
CY7C1568KV18-450BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1568KV18-500BZXI CY7C1568%2C70KV18.pdf
CY7C1568KV18-500BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1568KV18-550BZXI download
CY7C1568KV18-550BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 550 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1570KV18-400BZXI CY7C1568%2C70KV18.pdf
CY7C1570KV18-400BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Obsolete
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1570KV18-450BZC CY7C1568%2C70KV18.pdf
CY7C1570KV18-450BZC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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CY7C1570KV18-500BZC download
CY7C1570KV18-500BZC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 2M x 36
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CY7C1570KV18-500BZXC download
CY7C1570KV18-500BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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IRFH5250TR2PBF irfh5250pbf.pdf?fileId=5546d462533600a40153561b2c791eb8
IRFH5250TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 45A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
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IRFH5300TR2PBF irfh5300pbf.pdf?fileId=5546d462533600a40153561b3e141ebc
IRFH5300TR2PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
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IRFH5250TRPBF irfh5250pbf.pdf?fileId=5546d462533600a40153561b2c791eb8
IRFH5250TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 45A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
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IRFH5300TRPBF irfh5300pbf.pdf?fileId=5546d462533600a40153561b3e141ebc
IRFH5300TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 40A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+33.82 грн
Мінімальне замовлення: 4000
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ITS5215LCUMA1 Infineon-ITS5215L-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428dba73e98&ack=t
ITS5215LCUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-12
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-9
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+107.74 грн
2000+101.18 грн
3000+99.90 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
ITS5215LCUMA1 Infineon-ITS5215L-DS-v01_01-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b428dba73e98&ack=t
ITS5215LCUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-12
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-9
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 3495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+196.88 грн
10+142.15 грн
25+130.13 грн
100+109.75 грн
250+103.85 грн
500+100.29 грн
Мінімальне замовлення: 2
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BTS149NKSA1 fundamentals-of-power-semiconductors
BTS149NKSA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 14mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 19A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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BTS949NKSA1 BTS949.pdf
BTS949NKSA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-5
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 14mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 19A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-5-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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IPP023NE7N3GXKSA1 Infineon-IPP023NE7N3+G-DS-v02_11-EN.pdf?fileId=5546d4624fb7fef2014ff58007437938
IPP023NE7N3GXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
на замовлення 760 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+298.85 грн
50+182.91 грн
100+180.70 грн
500+164.71 грн
Мінімальне замовлення: 2
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IPP023NE7N3 G
IPP023NE7N3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A TO220
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BSC017N04NSGATMA1 BSC017N04NSG_rev1.24.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a304318a6cd680118efe5d5a60236
BSC017N04NSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
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BSC026N02KSGAUMA1 BSC026N02KS+G+Rev1.05.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a3043163797a6011637c2a4280019
BSC026N02KSGAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 25A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
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BSC027N04LSGATMA1 BSC027N04LSG_rev1.04.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c4323646080c
BSC027N04LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 49µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V
на замовлення 414 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+106.68 грн
10+64.73 грн
100+43.05 грн
Мінімальне замовлення: 3
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BSC028N06LS3GATMA1 BSC028N06LS3_rev2.2.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebafa4c607f8c
BSC028N06LS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
на замовлення 17559 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+233.75 грн
10+146.23 грн
100+101.37 грн
500+77.12 грн
1000+73.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC030N04NSGATMA1 BSC030N04NSG_rev1.04.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c45f30440837
BSC030N04NSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 49µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 20 V
на замовлення 4421 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+100.40 грн
10+61.03 грн
100+40.70 грн
500+29.98 грн
1000+27.34 грн
2000+25.11 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC031N06NS3GATMA1 BSC031N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebaff49fa7fa6
BSC031N06NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
на замовлення 8318 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+221.98 грн
10+138.60 грн
100+95.74 грн
500+72.66 грн
1000+68.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC046N02KSGAUMA1 BSC046N02KS+G+Rev1.05.pdf?folderId=db3a3043163797a6011637c252b10018&fileId=db3a3043163797a6011637c34414001c
BSC046N02KSGAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 19A/80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
на замовлення 4773 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+160.80 грн
10+99.10 грн
100+67.32 грн
500+50.40 грн
1000+46.29 грн
2000+42.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC054N04NSGATMA1 BSC054N04NSG_rev1.04.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c46167a0083c
BSC054N04NSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 17A/81A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 27µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V
на замовлення 6967 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+89.42 грн
10+54.08 грн
100+35.62 грн
500+26.00 грн
1000+23.60 грн
2000+21.59 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC057N08NS3GATMA1 BSC057N08NS3G_rev2.4.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae803c9345616
BSC057N08NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 16A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V
на замовлення 75874 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+189.04 грн
10+117.46 грн
100+80.55 грн
500+60.77 грн
1000+56.80 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC060N10NS3GATMA1 BSC060N10NS3+Rev2.4.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431ce5fb52011d1aab7f90133a
BSC060N10NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 14.9/90A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
на замовлення 11816 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+171.78 грн
10+106.28 грн
100+72.81 грн
500+54.91 грн
1000+54.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC072N03LDGATMA1 BSC072N03LDG.pdf
BSC072N03LDGATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 11.5A 8TDSON
товару немає в наявності
В кошику  од. на суму  грн.
BSC080P03LSGAUMA1 BSC080P03LS+G_Rev1.03.pdf?folderId=db3a304314dca38901154a7313d21a66&fileId=db3a304314dca38901154a7800621a6c
BSC080P03LSGAUMA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 16A/30A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 122.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+237.67 грн
10+148.88 грн
100+103.24 грн
500+78.58 грн
1000+72.70 грн
2000+67.75 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC093N04LSGATMA1 BSC093N04LSG_rev1.04.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431689f4420116c44a1fa80822
BSC093N04LSGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 13A/49A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
на замовлення 17107 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+61.97 грн
10+37.01 грн
100+24.09 грн
500+17.37 грн
1000+15.68 грн
2000+14.26 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BSC100N06LS3GATMA1 BSC100N06LS3_rev2.2.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb0823387fd7
BSC100N06LS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 12A/50A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
на замовлення 3953 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+113.74 грн
10+69.11 грн
100+46.26 грн
500+34.21 грн
1000+31.24 грн
2000+30.74 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC110N06NS3GATMA1 BSC110N06NS3_Rev2.3.pdf?folderId=db3a30431ddc9372011ebafa04517f8b&fileId=db3a30431ddc9372011ebb0be43c7fe6
BSC110N06NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 23µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
на замовлення 1789 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+95.70 грн
10+58.09 грн
100+38.57 грн
500+28.31 грн
1000+25.77 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC123N08NS3GATMA1 BSC123N08NS3G_rev2.5.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae80eb8555625
BSC123N08NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 11A/55A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 40 V
на замовлення 12898 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+140.41 грн
10+86.18 грн
100+58.12 грн
500+43.26 грн
1000+39.63 грн
2000+37.69 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC150N03LDGATMA1 BSC150N03LD_rev1.4.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304316f66ee80116fb504a5d729f
BSC150N03LDGATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
на замовлення 49295 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.77 грн
10+55.44 грн
100+36.57 грн
500+26.71 грн
1000+24.26 грн
2000+22.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC190N15NS3GATMA1 BSC190N15NS3_Rev2.4.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431d8a6b3c011d8bf2fcf30076
BSC190N15NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 50A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 75 V
на замовлення 14695 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+185.90 грн
10+115.64 грн
100+79.64 грн
500+61.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC340N08NS3GATMA1 BSC340N08NS3G_rev2.6.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30431add1d95011ae81c21f2563a
BSC340N08NS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 7A/23A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 40 V
на замовлення 13753 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+93.34 грн
10+56.35 грн
100+37.22 грн
500+27.21 грн
1000+24.72 грн
2000+22.63 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSD235C L6327 BSD235C_rev2.3.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a30433580b371013585a2d0d53326
BSD235C L6327
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA
Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Supplier Device Package: PG-SOT363-PO
товару немає в наявності
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BSL316CL6327HTSA1 BSL316C_rev2.1.pdf?folderId=db3a30431add1d95011aed428f2d0285&fileId=db3a30431add1d95011aed6aee7702ee
BSL316CL6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
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BSO220N03MDGXUMA1 BSO220N03MD_rev1.1.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d922ec17e5c
BSO220N03MDGXUMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
на замовлення 8052 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+79.22 грн
10+47.89 грн
100+31.47 грн
500+22.91 грн
1000+20.78 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSP452HUMA1 Infineon-BSP452-DS-v01_00-en.pdf?folderId=db3a304314dca389011537739e37155f&fileId=db3a30431b3e89eb011b7eac4d321531&ack=t
BSP452HUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 59328 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+170.21 грн
10+121.68 грн
25+111.06 грн
100+93.25 грн
250+88.02 грн
500+84.87 грн
1000+80.93 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSP742RXUMA1 Infineon-BSP742R-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aae0b5fd54c4d
BSP742RXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 36019 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.54 грн
10+73.04 грн
25+66.32 грн
100+55.27 грн
250+51.95 грн
500+49.96 грн
1000+47.52 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSP742RIXUMA1 Infineon-BSP742RI-DS-v01_01-en.pdf?folderId=db3a304314dca389011537739e37155f&fileId=db3a304316f112290116f22466b271a6&ack=t
BSP742RIXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-6
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 5902 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+120.01 грн
10+84.82 грн
25+77.10 грн
100+64.46 грн
250+60.68 грн
500+58.41 грн
1000+55.61 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSP752TXUMA1 Infineon-BSP752T-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a8533f0fa778a
BSP752TXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 4973 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+129.42 грн
10+91.55 грн
25+83.33 грн
100+69.77 грн
250+65.75 грн
500+63.32 грн
1000+60.32 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSP75NHUMA1 Infineon-BSP75N-DS-v01_04-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f471f5a0256d1&ack=t
BSP75NHUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Not For New Designs
товару немає в наявності
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BSP76E6433HUMA1 Infineon-BSP76-DS-v01_03-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043271faefd01274d00e2695d45&ack=t
BSP76E6433HUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 12252 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+97.26 грн
10+67.98 грн
25+61.64 грн
100+51.31 грн
250+48.19 грн
500+46.32 грн
1000+44.04 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSP77E6433HUMA1 Infineon-BSP77%20E6433-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aaddd9fa44c3d
BSP77E6433HUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.17A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 14213 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+111.38 грн
10+78.25 грн
25+71.12 грн
100+59.35 грн
250+55.82 грн
500+53.70 грн
1000+51.10 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSP78HUMA1 Infineon-BSP78-DS-v01_03-EN.pdf?fileId=5546d4625a888733015aaddd91c74c39
BSP78HUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 11607 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+123.15 грн
10+87.32 грн
25+79.49 грн
100+66.46 грн
250+62.59 грн
500+60.25 грн
1000+57.37 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSR202NL6327HTSA1 BSR202N_Rev1.06.pdf?folderId=db3a3043156fd573011622e10b5c1f67&fileId=db3a3043156fd573011622e5576e1f72
BSR202NL6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 3.8A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Qualification: AEC-Q101
на замовлення 1585 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+50.99 грн
10+30.52 грн
100+19.71 грн
500+14.11 грн
1000+12.70 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BSS215PL6327HTSA1 BSS215P.pdf
BSS215PL6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V
товару немає в наявності
В кошику  од. на суму  грн.
BSS315PL6327HTSA1 BSS315P.pdf
BSS315PL6327HTSA1
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 15 V
товару немає в наявності
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