Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126741) > Сторінка 145 з 2113
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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CY7C1568KV18-500BZXI | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGAMemory Organization: 4M x 18 Memory Interface: Parallel Part Status: Obsolete Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 500 MHz Technology: SRAM - Synchronous, DDR II+ Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 72Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY7C1568KV18-550BZXI | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGADigiKey Programmable: Not Verified Memory Organization: 4M x 18 Memory Interface: Parallel Part Status: Active Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 550 MHz Technology: SRAM - Synchronous, DDR II+ Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 72Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 680 шт В кошику од. на суму грн. | ||||||||||||||
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CY7C1570KV18-400BZXI | Infineon Technologies |
Description: IC SRAM 72MBIT PARALLEL 165FBGAOperating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 72Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray DigiKey Programmable: Not Verified Memory Organization: 2M x 36 Memory Interface: Parallel Part Status: Obsolete Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 400 MHz Technology: SRAM - Synchronous, DDR II+ Voltage - Supply: 1.7V ~ 1.9V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY7C1570KV18-450BZC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGADigiKey Programmable: Not Verified Memory Organization: 2M x 36 Memory Interface: Parallel Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 450 MHz Technology: SRAM - Synchronous, DDR II+ Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 72Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY7C1570KV18-500BZC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGAClock Frequency: 500 MHz Technology: SRAM - Synchronous, DDR II+ Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 72Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray Memory Organization: 2M x 36 Memory Interface: Parallel Part Status: Active Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY7C1570KV18-500BZXC | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGADigiKey Programmable: Not Verified Memory Organization: 2M x 36 Memory Interface: Parallel Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 500 MHz Technology: SRAM - Synchronous, DDR II+ Voltage - Supply: 1.7V ~ 1.9V Memory Size: 72Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) |
товару немає в наявності |
Мінімальне замовлення: 680 шт В кошику од. на суму грн. | ||||||||||||||
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IRFH5250TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 25V 45A PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Obsolete Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFH5300TR2PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 40A PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: PQFN (5x6) Single Die Part Status: Obsolete Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFH5250TRPBF | Infineon Technologies |
Description: MOSFET N-CH 25V 45A/100A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 160W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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IRFH5300TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 40A/100A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 150µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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ITS5215LCUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-12Features: Status Flag Packaging: Tape & Reel (TR) Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 40V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-12-9 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active |
на замовлення 1695 шт: термін постачання 21-31 дні (днів) |
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ITS5215LCUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-12Features: Status Flag Packaging: Cut Tape (CT) Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -30°C ~ 85°C (TA) Output Configuration: High Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 5.5V ~ 40V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-12-9 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active |
на замовлення 2148 шт: термін постачання 21-31 дні (днів) |
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BTS149NKSA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO220-3Packaging: Tube Package / Case: TO-220-3 Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 14mOhm Input Type: Non-Inverting Voltage - Load: 60V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 19A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-3-1 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS949NKSA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO220-5Packaging: Tube Package / Case: TO-220-5 Formed Leads Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 14mOhm Input Type: Non-Inverting Voltage - Load: 60V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 19A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO220-5-11 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP023NE7N3GXKSA1 | Infineon Technologies |
Description: MOSFET N-CH 75V 120A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 273µA Supplier Device Package: PG-TO220-3-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V |
на замовлення 760 шт: термін постачання 21-31 дні (днів) |
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IPP023NE7N3 G | Infineon Technologies | Description: MOSFET N-CH 75V 120A TO220 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC017N04NSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 30A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 85µA Supplier Device Package: PG-TDSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC026N02KSGAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 20V 25A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 200µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC027N04LSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 24A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2V @ 49µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V |
на замовлення 60040 шт: термін постачання 21-31 дні (днів) |
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BSC028N06LS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 23A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 93µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V |
на замовлення 17559 шт: термін постачання 21-31 дні (днів) |
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BSC030N04NSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 23A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 4V @ 49µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 20 V |
на замовлення 4421 шт: термін постачання 21-31 дні (днів) |
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BSC031N06NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 100A TDSON-8-1Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 139W (Tc) Vgs(th) (Max) @ Id: 4V @ 93µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V |
на замовлення 1238 шт: термін постачання 21-31 дні (днів) |
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BSC046N02KSGAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 20V 19A/80A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 4.5V Power Dissipation (Max): 2.8W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 1.2V @ 110µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V |
на замовлення 4773 шт: термін постачання 21-31 дні (днів) |
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BSC054N04NSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 17A/81A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 27µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V |
на замовлення 11800 шт: термін постачання 21-31 дні (днів) |
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BSC057N08NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 16A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 114W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 73µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V |
на замовлення 46536 шт: термін постачання 21-31 дні (днів) |
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BSC060N10NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 14.9/90A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V |
на замовлення 12483 шт: термін постачання 21-31 дні (днів) |
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BSC072N03LDGATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 30V 11.5A 8TDSON |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSC080P03LSGAUMA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 16A/30A TDSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 122.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSC093N04LSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 13A/49A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10V Power Dissipation (Max): 2.5W (Ta), 35W (Tc) Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V |
на замовлення 8783 шт: термін постачання 21-31 дні (днів) |
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BSC100N06LS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 12A/50A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 23µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V |
на замовлення 9612 шт: термін постачання 21-31 дні (днів) |
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BSC110N06NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 50A TDSON-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 4V @ 23µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V |
на замовлення 288 шт: термін постачання 21-31 дні (днів) |
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BSC123N08NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 11A/55A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 12.3mOhm @ 33A, 10V Power Dissipation (Max): 2.5W (Ta), 66W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 33µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 40 V |
на замовлення 34 шт: термін постачання 21-31 дні (днів) |
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BSC150N03LDGATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 30V 8A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 26W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active |
на замовлення 48039 шт: термін постачання 21-31 дні (днів) |
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BSC190N15NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 50A TDSON-8-1Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 50A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 75 V |
на замовлення 24641 шт: термін постачання 21-31 дні (днів) |
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BSC340N08NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 80V 7A/23A TDSON-8-5Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V Power Dissipation (Max): 2.5W (Ta), 32W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 12µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 40 V |
на замовлення 4127 шт: термін постачання 21-31 дні (днів) |
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BSD235C L6327 | Infineon Technologies |
Description: MOSFET N/P-CH 20V SOT-363Packaging: Cut Tape (CT) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 1.6µA Supplier Device Package: PG-SOT363-PO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSL316CL6327HTSA1 | Infineon Technologies |
Description: MOSFET N/P-CH 30V TSOP-6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 3.7µA Supplier Device Package: PG-TSOP6-6 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSO220N03MDGXUMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 30V 6A 8DSOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PG-DSO-8 Part Status: Active |
на замовлення 8052 шт: термін постачання 21-31 дні (днів) |
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BSP452HUMA1 | Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 160mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 700mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223-4 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
на замовлення 117605 шт: термін постачання 21-31 дні (днів) |
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BSP742RXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 250mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 400mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-8-6 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Active |
на замовлення 31743 шт: термін постачання 21-31 дні (днів) |
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BSP742RIXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 250mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 34V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 400mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-8-6 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
на замовлення 4747 шт: термін постачання 21-31 дні (днів) |
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BSP752TXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 150mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 52V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-8-24 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
на замовлення 4648 шт: термін постачання 21-31 дні (днів) |
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BSP76E6433HUMA1 | Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4Features: Auto Restart Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 150mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1.4A Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223-4 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
на замовлення 31134 шт: термін постачання 21-31 дні (днів) |
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BSP77E6433HUMA1 | Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4Features: Auto Restart Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.17A Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223-4 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
на замовлення 12706 шт: термін постачання 21-31 дні (днів) |
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BSP78HUMA1 | Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4Features: Auto Restart Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 35mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223-4 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSR202NL6327HTSA1 | Infineon Technologies |
Description: MOSFET N-CH 20V 3.8A SC59Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 3.8A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 30µA Supplier Device Package: PG-SC59-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V Qualification: AEC-Q101 |
на замовлення 2142 шт: термін постачання 21-31 дні (днів) |
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BSS215PL6327HTSA1 | Infineon Technologies |
Description: MOSFET P-CH 20V 1.5A SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Obsolete Supplier Device Package: PG-SOT23 Vgs(th) (Max) @ Id: 1.2V @ 11µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSS315PL6327HTSA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 1.5A SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-SOT23 Vgs(th) (Max) @ Id: 2V @ 11µA Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTM7700GXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER DSO28Packaging: Cut Tape (CT) Load Type: Inductive Fault Protection: Over Temperature, Short Circuit, UVLO Supplier Device Package: PG-DSO-28 Voltage - Load: 1.8V ~ 42V Technology: DMOS Current - Peak Output: 9.5A Applications: DC Motors, General Purpose Rds On (Typ): 80mOhm LS, 110mOhm HS Voltage - Supply: 1.8V ~ 42V Output Configuration: Half Bridge (2) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Logic Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Features: Status Flag |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTM7710GXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER DSO28Packaging: Cut Tape (CT) Features: Status Flag Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 1.8V ~ 42V Rds On (Typ): 40mOhm LS, 70mOhm HS Applications: DC Motors, General Purpose Current - Peak Output: 15A Technology: DMOS Voltage - Load: 1.8V ~ 42V Supplier Device Package: PG-DSO-28 Fault Protection: Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTM7741GXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER DSO28Features: Status Flag Packaging: Cut Tape (CT) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 1.8V ~ 42V Rds On (Typ): 100mOhm LS, 110mOhm HS Applications: DC Motors, General Purpose Current - Peak Output: 10A Technology: DMOS Voltage - Load: 1.8V ~ 42V Supplier Device Package: PG-DSO-28 Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO Load Type: Inductive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTM7750GXUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER DSO28Features: Status Flag Packaging: Cut Tape (CT) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Interface: Logic Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 1.8V ~ 42V Rds On (Typ): 45mOhm LS, 70mOhm HS Applications: DC Motors, General Purpose Current - Peak Output: 12A Technology: DMOS Voltage - Load: 1.8V ~ 42V Supplier Device Package: PG-DSO-28 Fault Protection: Over Temperature, Short Circuit, UVLO Load Type: Inductive Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTM7810KAUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER TO263-15Part Status: Obsolete Load Type: Inductive Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO Supplier Device Package: PG-TO263-15-1 Voltage - Load: 1.8V ~ 42V Technology: DMOS Current - Peak Output: 42A Applications: DC Motors, General Purpose Rds On (Typ): 14mOhm LS, 26mOhm HS Voltage - Supply: 1.8V ~ 42V Output Configuration: Half Bridge (2) Operating Temperature: -40°C ~ 110°C (TJ) Interface: Logic Mounting Type: Surface Mount Package / Case: TO-263-18 (15 Leads + 3 Tabs) Features: Status Flag Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTM7811KAUMA1 | Infineon Technologies |
Description: IC BRIDGE DRIVER PAR TO263-15 |
на замовлення 3316 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BTS118DATMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3Packaging: Cut Tape (CT) Features: Auto Restart Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.4A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO252-3-11 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
на замовлення 2303 шт: термін постачання 21-31 дні (днів) |
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BTS134DATMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3Packaging: Cut Tape (CT) Features: Auto Restart Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 35mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO252-3-11 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
на замовлення 5005 шт: термін постачання 21-31 дні (днів) |
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BTS3118NHUMA1 | Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 70mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 2.17A Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223-4 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
на замовлення 18993 шт: термін постачання 21-31 дні (днів) |
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BTS3134NHUMA1 | Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 35mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3A Ratio - Input:Output: 1:1 Supplier Device Package: PG-SOT223-4 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
на замовлення 74168 шт: термін постачання 21-31 дні (днів) |
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BTS3160DAUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 8mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 45V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 7.8A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TO252-5-13 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO Part Status: Active |
на замовлення 2949 шт: термін постачання 21-31 дні (днів) |
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BTS3205GXUMA1 | Infineon Technologies |
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8Packaging: Cut Tape (CT) Features: Auto Restart Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Low Side Rds On (Typ): 700mOhm Input Type: Non-Inverting Voltage - Load: 42V (Max) Voltage - Supply (Vcc/Vdd): Not Required Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-8-24 Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage Part Status: Active |
на замовлення 8362 шт: термін постачання 21-31 дні (днів) |
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| CY7C1568KV18-500BZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Memory Organization: 4M x 18
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 165FBGA
Memory Organization: 4M x 18
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
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| CY7C1568KV18-550BZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 550 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Description: IC SRAM 72MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 550 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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Мінімальне замовлення: 680 шт
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| CY7C1570KV18-400BZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 400 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Part Status: Obsolete
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 400 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
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| CY7C1570KV18-450BZC |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 450 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Description: IC SRAM 72MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 450 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
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| CY7C1570KV18-500BZC |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Memory Organization: 2M x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Description: IC SRAM 72MBIT PAR 165FBGA
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Memory Organization: 2M x 36
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
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| CY7C1570KV18-500BZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Description: IC SRAM 72MBIT PAR 165FBGA
DigiKey Programmable: Not Verified
Memory Organization: 2M x 36
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 500 MHz
Technology: SRAM - Synchronous, DDR II+
Voltage - Supply: 1.7V ~ 1.9V
Memory Size: 72Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
товару немає в наявності
Мінімальне замовлення: 680 шт
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| IRFH5250TR2PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 45A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
Description: MOSFET N-CH 25V 45A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Obsolete
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
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| IRFH5300TR2PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
Description: MOSFET N-CH 30V 40A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: PQFN (5x6) Single Die
Part Status: Obsolete
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
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| IRFH5250TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 45A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
Description: MOSFET N-CH 25V 45A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7174 pF @ 13 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| IRFH5300TRPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 40A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
Description: MOSFET N-CH 30V 40A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.6W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 15 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 34.53 грн |
| ITS5215LCUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-12
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-9
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 DSO-12
Features: Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-9
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 1695 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 113.98 грн |
| ITS5215LCUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-12
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-9
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 DSO-12
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -30°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 40V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-12-9
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 2148 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 208.54 грн |
| 10+ | 150.35 грн |
| 25+ | 137.69 грн |
| 100+ | 116.11 грн |
| 250+ | 109.87 грн |
| 500+ | 107.89 грн |
| BTS149NKSA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 14mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 19A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:1 TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 14mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 19A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-3-1
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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| BTS949NKSA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO220-5
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 14mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 19A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-5-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Description: IC PWR SWITCH N-CHAN 1:1 TO220-5
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 14mOhm
Input Type: Non-Inverting
Voltage - Load: 60V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 19A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO220-5-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
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| IPP023NE7N3GXKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
Description: MOSFET N-CH 75V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 273µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14400 pF @ 37.5 V
на замовлення 760 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 302.11 грн |
| 50+ | 184.90 грн |
| 100+ | 182.67 грн |
| 500+ | 166.50 грн |
| IPP023NE7N3 G |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 120A TO220
Description: MOSFET N-CH 75V 120A TO220
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| BSC017N04NSGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
Description: MOSFET N-CH 40V 30A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| BSC026N02KSGAUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 25A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
Description: MOSFET N-CH 20V 25A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 52.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| BSC027N04LSGATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 49µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V
Description: MOSFET N-CH 40V 24A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 49µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 20 V
на замовлення 60040 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.94 грн |
| 10+ | 57.80 грн |
| 50+ | 42.99 грн |
| 100+ | 35.83 грн |
| 500+ | 27.91 грн |
| BSC028N06LS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
Description: MOSFET N-CH 60V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 93µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
на замовлення 17559 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 236.29 грн |
| 10+ | 147.83 грн |
| 100+ | 102.47 грн |
| 500+ | 77.96 грн |
| 1000+ | 73.84 грн |
| BSC030N04NSGATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 49µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 20 V
Description: MOSFET N-CH 40V 23A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 49µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 20 V
на замовлення 4421 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.87 грн |
| 10+ | 63.22 грн |
| 100+ | 42.09 грн |
| 500+ | 31.01 грн |
| 1000+ | 28.28 грн |
| 2000+ | 25.98 грн |
| BSC031N06NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
Description: MOSFET N-CH 60V 100A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
Vgs(th) (Max) @ Id: 4V @ 93µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
на замовлення 1238 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 207.75 грн |
| 10+ | 129.73 грн |
| 100+ | 89.60 грн |
| 500+ | 70.52 грн |
| BSC046N02KSGAUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 19A/80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
Description: MOSFET N-CH 20V 19A/80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 50A, 4.5V
Power Dissipation (Max): 2.8W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 110µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 27.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 10 V
на замовлення 4773 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 162.55 грн |
| 10+ | 100.18 грн |
| 100+ | 68.06 грн |
| 500+ | 50.95 грн |
| 1000+ | 46.80 грн |
| 2000+ | 43.30 грн |
| BSC054N04NSGATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 17A/81A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 27µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V
Description: MOSFET N-CH 40V 17A/81A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 27µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V
на замовлення 11800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 67.40 грн |
| 10+ | 40.16 грн |
| 50+ | 29.50 грн |
| 100+ | 24.46 грн |
| 500+ | 18.77 грн |
| BSC057N08NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 16A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V
Description: MOSFET N-CH 80V 16A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 114W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 73µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V
на замовлення 46536 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 173.65 грн |
| 10+ | 107.28 грн |
| 50+ | 81.27 грн |
| 100+ | 68.39 грн |
| 500+ | 54.56 грн |
| BSC060N10NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 14.9/90A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
Description: MOSFET N-CH 100V 14.9/90A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
на замовлення 12483 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 219.64 грн |
| 10+ | 137.14 грн |
| 100+ | 94.70 грн |
| 500+ | 71.83 грн |
| 1000+ | 68.99 грн |
| BSC072N03LDGATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 11.5A 8TDSON
Description: MOSFET 2N-CH 30V 11.5A 8TDSON
товару немає в наявності
В кошику
од. на суму грн.
| BSC080P03LSGAUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 16A/30A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 122.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
Description: MOSFET P-CH 30V 16A/30A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 122.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 240.26 грн |
| 10+ | 150.50 грн |
| 100+ | 104.36 грн |
| 500+ | 79.43 грн |
| 1000+ | 73.49 грн |
| 2000+ | 68.49 грн |
| BSC093N04LSGATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 13A/49A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
Description: MOSFET N-CH 40V 13A/49A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 35W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
на замовлення 8783 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 57.88 грн |
| 10+ | 34.82 грн |
| 50+ | 25.53 грн |
| 100+ | 21.12 грн |
| 500+ | 16.12 грн |
| BSC100N06LS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 12A/50A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
Description: MOSFET N-CH 60V 12A/50A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 23µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 30 V
на замовлення 9612 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.88 грн |
| 10+ | 48.64 грн |
| 50+ | 35.99 грн |
| 100+ | 29.93 грн |
| 500+ | 23.15 грн |
| BSC110N06NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 23µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
Description: MOSFET N-CH 60V 50A TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 4V @ 23µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
на замовлення 288 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 111.01 грн |
| 10+ | 67.58 грн |
| 50+ | 50.35 грн |
| 100+ | 42.04 грн |
| BSC123N08NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 11A/55A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 40 V
Description: MOSFET N-CH 80V 11A/55A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 33A, 10V
Power Dissipation (Max): 2.5W (Ta), 66W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1870 pF @ 40 V
на замовлення 34 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.28 грн |
| 10+ | 76.43 грн |
| BSC150N03LDGATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
Description: MOSFET 2N-CH 30V 8A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
на замовлення 48039 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 88.81 грн |
| 10+ | 53.68 грн |
| 100+ | 35.32 грн |
| 500+ | 25.74 грн |
| 1000+ | 23.36 грн |
| 2000+ | 21.35 грн |
| BSC190N15NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 50A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 75 V
Description: MOSFET N-CH 150V 50A TDSON-8-1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 50A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 75 V
на замовлення 24641 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 227.57 грн |
| 10+ | 142.25 грн |
| 100+ | 98.38 грн |
| 500+ | 74.75 грн |
| 1000+ | 72.33 грн |
| BSC340N08NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 7A/23A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 40 V
Description: MOSFET N-CH 80V 7A/23A TDSON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V
Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 756 pF @ 40 V
на замовлення 4127 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 88.81 грн |
| 10+ | 53.45 грн |
| 50+ | 39.66 грн |
| 100+ | 33.02 грн |
| 500+ | 25.64 грн |
| BSD235C L6327 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 20V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA
Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Supplier Device Package: PG-SOT363-PO
Description: MOSFET N/P-CH 20V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 950mA, 530mA
Input Capacitance (Ciss) (Max) @ Vds: 47pF @ 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 950mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.34nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 1.6µA
Supplier Device Package: PG-SOT363-PO
товару немає в наявності
В кошику
од. на суму грн.
| BSL316CL6327HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
Description: MOSFET N/P-CH 30V TSOP-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.4A, 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 94pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 3.7µA
Supplier Device Package: PG-TSOP6-6
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| BSO220N03MDGXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
Description: MOSFET 2N-CH 30V 6A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
на замовлення 8052 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 80.09 грн |
| 10+ | 48.41 грн |
| 100+ | 31.81 грн |
| 500+ | 23.16 грн |
| 1000+ | 21.00 грн |
| BSP452HUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 160mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 700mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 117605 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 163.34 грн |
| 10+ | 117.05 грн |
| 25+ | 106.81 грн |
| 100+ | 89.68 грн |
| 250+ | 84.66 грн |
| 500+ | 82.23 грн |
| BSP742RXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Active
на замовлення 31743 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 113.39 грн |
| 10+ | 80.02 грн |
| 25+ | 72.72 грн |
| 100+ | 60.67 грн |
| 250+ | 57.04 грн |
| 500+ | 54.86 грн |
| 1000+ | 53.57 грн |
| BSP742RIXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-6
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 250mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 34V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 400mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-6
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 4747 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 131.63 грн |
| 10+ | 93.15 грн |
| 25+ | 84.79 грн |
| 100+ | 70.92 грн |
| 250+ | 66.79 грн |
| 500+ | 64.31 грн |
| 1000+ | 63.16 грн |
| BSP752TXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 PDSO-8
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 52V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 4648 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 143.52 грн |
| 10+ | 102.16 грн |
| 25+ | 93.09 грн |
| 100+ | 78.00 грн |
| 250+ | 73.52 грн |
| 500+ | 70.99 грн |
| BSP76E6433HUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 150mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 31134 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.49 грн |
| 10+ | 71.01 грн |
| 25+ | 64.44 грн |
| 100+ | 53.64 грн |
| 250+ | 50.38 грн |
| 500+ | 48.41 грн |
| 1000+ | 47.03 грн |
| BSP77E6433HUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.17A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.17A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 12706 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 115.77 грн |
| 10+ | 81.85 грн |
| 25+ | 74.34 грн |
| 100+ | 62.04 грн |
| 250+ | 58.35 грн |
| 500+ | 56.13 грн |
| 1000+ | 54.85 грн |
| BSP78HUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Features: Auto Restart
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
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| BSR202NL6327HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 3.8A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 3.8A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 3.8A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 30µA
Supplier Device Package: PG-SC59-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1147 pF @ 10 V
Qualification: AEC-Q101
на замовлення 2142 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 56.30 грн |
| 10+ | 33.29 грн |
| 100+ | 21.47 грн |
| 500+ | 15.37 грн |
| 1000+ | 13.83 грн |
| BSS215PL6327HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 20V 1.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 1.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1.2V @ 11µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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| BSS315PL6327HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 1.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 2V @ 11µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 1.5A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 282 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 2V @ 11µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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| BTM7700GXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER DSO28
Packaging: Cut Tape (CT)
Load Type: Inductive
Fault Protection: Over Temperature, Short Circuit, UVLO
Supplier Device Package: PG-DSO-28
Voltage - Load: 1.8V ~ 42V
Technology: DMOS
Current - Peak Output: 9.5A
Applications: DC Motors, General Purpose
Rds On (Typ): 80mOhm LS, 110mOhm HS
Voltage - Supply: 1.8V ~ 42V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Features: Status Flag
Description: IC HALF BRIDGE DRIVER DSO28
Packaging: Cut Tape (CT)
Load Type: Inductive
Fault Protection: Over Temperature, Short Circuit, UVLO
Supplier Device Package: PG-DSO-28
Voltage - Load: 1.8V ~ 42V
Technology: DMOS
Current - Peak Output: 9.5A
Applications: DC Motors, General Purpose
Rds On (Typ): 80mOhm LS, 110mOhm HS
Voltage - Supply: 1.8V ~ 42V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Features: Status Flag
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| BTM7710GXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER DSO28
Packaging: Cut Tape (CT)
Features: Status Flag
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 40mOhm LS, 70mOhm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 15A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: PG-DSO-28
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER DSO28
Packaging: Cut Tape (CT)
Features: Status Flag
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 40mOhm LS, 70mOhm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 15A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: PG-DSO-28
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
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| BTM7741GXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER DSO28
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 100mOhm LS, 110mOhm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 10A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: PG-DSO-28
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER DSO28
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 100mOhm LS, 110mOhm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 10A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: PG-DSO-28
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
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| BTM7750GXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER DSO28
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 45mOhm LS, 70mOhm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 12A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: PG-DSO-28
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
Description: IC HALF BRIDGE DRIVER DSO28
Features: Status Flag
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 1.8V ~ 42V
Rds On (Typ): 45mOhm LS, 70mOhm HS
Applications: DC Motors, General Purpose
Current - Peak Output: 12A
Technology: DMOS
Voltage - Load: 1.8V ~ 42V
Supplier Device Package: PG-DSO-28
Fault Protection: Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Obsolete
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| BTM7810KAUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER TO263-15
Part Status: Obsolete
Load Type: Inductive
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Supplier Device Package: PG-TO263-15-1
Voltage - Load: 1.8V ~ 42V
Technology: DMOS
Current - Peak Output: 42A
Applications: DC Motors, General Purpose
Rds On (Typ): 14mOhm LS, 26mOhm HS
Voltage - Supply: 1.8V ~ 42V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 110°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: TO-263-18 (15 Leads + 3 Tabs)
Features: Status Flag
Packaging: Cut Tape (CT)
Description: IC HALF BRIDGE DRIVER TO263-15
Part Status: Obsolete
Load Type: Inductive
Fault Protection: Open Load Detect, Over Temperature, Short Circuit, UVLO
Supplier Device Package: PG-TO263-15-1
Voltage - Load: 1.8V ~ 42V
Technology: DMOS
Current - Peak Output: 42A
Applications: DC Motors, General Purpose
Rds On (Typ): 14mOhm LS, 26mOhm HS
Voltage - Supply: 1.8V ~ 42V
Output Configuration: Half Bridge (2)
Operating Temperature: -40°C ~ 110°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: TO-263-18 (15 Leads + 3 Tabs)
Features: Status Flag
Packaging: Cut Tape (CT)
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| BTM7811KAUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC BRIDGE DRIVER PAR TO263-15
Description: IC BRIDGE DRIVER PAR TO263-15
на замовлення 3316 шт:
термін постачання 21-31 дні (днів)
| BTS118DATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.4A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 2303 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 140.35 грн |
| 10+ | 99.57 грн |
| 25+ | 90.71 грн |
| 100+ | 75.98 грн |
| 250+ | 71.60 грн |
| 500+ | 69.04 грн |
| BTS134DATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 5005 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.56 грн |
| 10+ | 99.03 грн |
| 25+ | 90.22 грн |
| 100+ | 75.63 грн |
| 250+ | 71.32 грн |
| 500+ | 68.72 грн |
| 1000+ | 65.49 грн |
| BTS3118NHUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.17A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 70mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.17A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 18993 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 120.53 грн |
| 10+ | 85.29 грн |
| 25+ | 77.52 грн |
| 100+ | 64.71 грн |
| 250+ | 60.89 грн |
| 500+ | 58.59 грн |
| 1000+ | 57.35 грн |
| BTS3134NHUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWTCH N-CHAN 1:1 SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-SOT223-4
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 74168 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 138.76 грн |
| 10+ | 98.42 грн |
| 25+ | 89.61 грн |
| 100+ | 75.03 грн |
| 250+ | 70.71 грн |
| 500+ | 68.15 грн |
| BTS3160DAUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 8mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-13
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 8mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 45V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 7.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5-13
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage, UVLO
Part Status: Active
на замовлення 2949 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 222.02 грн |
| 10+ | 160.27 грн |
| 25+ | 146.91 грн |
| 100+ | 124.03 грн |
| 250+ | 117.43 грн |
| 500+ | 115.62 грн |
| BTS3205GXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 700mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
Description: IC PWR SWITCH N-CHAN 1:1 DSO-8
Packaging: Cut Tape (CT)
Features: Auto Restart
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 700mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-8-24
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Active
на замовлення 8362 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 77.71 грн |
| 10+ | 54.52 грн |
| 25+ | 49.30 грн |
| 100+ | 40.87 грн |
| 250+ | 38.31 грн |
| 500+ | 36.76 грн |
| 1000+ | 34.90 грн |






























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