Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149786) > Сторінка 158 з 2497
| Фото | Назва | Виробник | Інформація |
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BFR183WH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ PG-SOT-323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 18.5dB Power - Max: 450mW Current - Collector (Ic) (Max): 65mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT323 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BFR193FH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ PG-TSFP-3Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 12.5dB Power - Max: 580mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-TSFP-3 Part Status: Active |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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BFR193WH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 8GHZ PG-SOT-323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 10.5dB ~ 16dB Power - Max: 580mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT323 Part Status: Active |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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BFR340FH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 13dB ~ 28dB Power - Max: 75mW Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 9V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz Supplier Device Package: PG-TSFP-3 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BFR360FH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 15.5dB Power - Max: 210mW Current - Collector (Ic) (Max): 35mA Voltage - Collector Emitter Breakdown (Max): 9V DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V Frequency - Transition: 14GHz Noise Figure (dB Typ @ f): 1dB @ 1.8GHz Supplier Device Package: PG-TSFP-3 Part Status: Active |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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BFR720L3RHE6327XTSA1 | Infineon Technologies |
Description: TRANS RF NPN 4V 20MA TSLP-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BFR92WH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 15V 5GHZ PG-SOT-323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Gain: 11.5dB ~ 17dB Power - Max: 280mW Current - Collector (Ic) (Max): 45mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Frequency - Transition: 5GHz Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT323 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BFR93AWH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 6GHZ PG-SOT-323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 10.5dB ~ 15.5dB Power - Max: 300mW Current - Collector (Ic) (Max): 90mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V Frequency - Transition: 6GHz Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT323 Part Status: Active |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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BFS17SH6327XTSA1 | Infineon Technologies |
Description: RF TRANS 2NPN 15V 1.4GHZ SOT-363Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Power - Max: 280mW Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz Supplier Device Package: PG-SOT363-PO Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BFS17WH6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 15V 1.4GHZ PGSOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 280mW Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V Frequency - Transition: 1.4GHz Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz Supplier Device Package: PG-SOT323 Part Status: Not For New Designs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BFS481H6327XTSA1 | Infineon Technologies |
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Gain: 20dB Power - Max: 175mW Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT363-PO Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BFS483H6327XTSA1 | Infineon Technologies |
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 150°C (TJ) Gain: 19dB Power - Max: 450mW Current - Collector (Ic) (Max): 65mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT363-PO Part Status: Active |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BFY193PZZZA1 | Infineon Technologies |
Description: RF TRANS NPN 12V 7.5GHZ MICRO-X1Packaging: Box Package / Case: MICRO-X1 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 200°C (TJ) Gain: 12.5dB ~ 13.5dB Power - Max: 580mW Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 8V Frequency - Transition: 7.5GHz Noise Figure (dB Typ @ f): 2.3dB ~ 2.9dB @ 2GHz Supplier Device Package: MICRO-X1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BG3123H6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH DUAL 8V 25MA SOT363 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BG3123RH6327XTSA1 | Infineon Technologies |
Description: RF MOSFET 5V SOT363Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Current Rating (Amps): 25mA, 20mA Mounting Type: Surface Mount Frequency: 800MHz Configuration: 2 N-Channel (Dual) Gain: 25dB Technology: MOSFET (Metal Oxide) Noise Figure: 1.8dB Supplier Device Package: PG-SOT363-PO Voltage - Rated: 8 V Voltage - Test: 5 V Current - Test: 14 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BG3130H6327XTSA1 | Infineon Technologies |
Description: RF MOSFET 5V SOT363Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Current Rating (Amps): 25mA Mounting Type: Surface Mount Frequency: 800MHz Configuration: 2 N-Channel (Dual) Gain: 24dB Technology: MOSFET (Metal Oxide) Noise Figure: 1.3dB Supplier Device Package: PG-SOT363-PO Part Status: Obsolete Voltage - Rated: 8 V Voltage - Test: 5 V Current - Test: 14 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BG3130RH6327XTSA1 | Infineon Technologies |
Description: RF MOSFET 5V SOT363Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Current Rating (Amps): 25mA Mounting Type: Surface Mount Frequency: 800MHz Configuration: 2 N-Channel (Dual) Gain: 24dB Technology: MOSFET (Metal Oxide) Noise Figure: 1.3dB Supplier Device Package: PG-SOT363-PO Part Status: Obsolete Voltage - Rated: 8 V Voltage - Test: 5 V Current - Test: 14 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BG3430RH6327XTSA1 | Infineon Technologies |
Description: RF MOSFET 5V SOT363Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Current Rating (Amps): 25mA Mounting Type: Surface Mount Frequency: 800MHz Configuration: 2 N-Channel (Dual) Gain: 25dB Technology: MOSFET (Metal Oxide) Noise Figure: 1.3dB Supplier Device Package: PG-SOT363-PO Voltage - Rated: 8 V Voltage - Test: 5 V Current - Test: 14 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BG5120KH6327XTSA1 | Infineon Technologies |
Description: RF MOSFET 5V SOT363Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Current Rating (Amps): 20mA Mounting Type: Surface Mount Frequency: 800MHz Configuration: 2 N-Channel (Dual) Gain: 23dB Technology: MOSFET (Metal Oxide) Noise Figure: 1.1dB Supplier Device Package: PG-SOT363-PO Voltage - Rated: 8 V Voltage - Test: 5 V Current - Test: 10 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BG5412KH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH DUAL 8V 25MA SOT363 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGA420H6327XTSA1 | Infineon Technologies |
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3DPackaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Frequency: 0Hz ~ 3GHz RF Type: General Purpose Voltage - Supply: 3V ~ 6V Gain: 13dB Current - Supply: 6.7mA Noise Figure: 2.3dB P1dB: -2.5dBm Test Frequency: 1GHz Supplier Device Package: PG-SOT343-3D |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BGA420H6433XTMA1 | Infineon Technologies |
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3DPackaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Frequency: 0Hz ~ 3GHz RF Type: General Purpose Voltage - Supply: 3V ~ 6V Gain: 13dB Current - Supply: 6.7mA Noise Figure: 2.3dB P1dB: -2.5dBm Test Frequency: 1GHz Supplier Device Package: PG-SOT343-3D Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGA427H6327XTSA1 | Infineon Technologies |
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3DPackaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Frequency: 0Hz ~ 3GHz RF Type: General Purpose Voltage - Supply: 2V ~ 5V Gain: 18.5dB Current - Supply: 25mA Noise Figure: 2.2dB Test Frequency: 1.8GHz Supplier Device Package: PG-SOT343-3D Part Status: Not For New Designs |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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BGA428H6327XTSA1 | Infineon Technologies |
Description: IC AMP GPS 100MHZ-6GHZ SOT363-POPackaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Frequency: 100MHz ~ 6GHz RF Type: General Purpose Voltage - Supply: 2.4V ~ 3V Gain: 20dB Current - Supply: 8.2mA Noise Figure: 1.4dB P1dB: -19dBm Test Frequency: 1.8GHz Supplier Device Package: PG-SOT363-PO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGA614H6327XTSA1 | Infineon Technologies |
Description: IC AMP CDMA 0HZ-2.4GHZ SOT343-3DPackaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Frequency: 0Hz ~ 2.4GHz RF Type: CDMA, GSM, PCS Gain: 19dB Noise Figure: 2.1dB P1dB: 12dBm Test Frequency: 1GHz Supplier Device Package: PG-SOT343-3D Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGA616H6327XTSA1 | Infineon Technologies |
Description: IC AMP CDMA 0HZ-2.7GHZ SOT343-3DPackaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Frequency: 0Hz ~ 2.7GHz RF Type: CDMA, GSM, PCS Gain: 19dB Noise Figure: 2.5dB P1dB: 18dBm Test Frequency: 1GHz Supplier Device Package: PG-SOT343-3D Part Status: Active |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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BGA622H6820XTSA1 | Infineon Technologies |
Description: IC AMP DCS 500MHZ-6GHZ SOT343-3DPackaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Frequency: 500MHz ~ 6GHz RF Type: DCS, GSM, ISM Voltage - Supply: 3.5V Gain: 13.6dB Current - Supply: 10mA Noise Figure: 1.05dB P1dB: -13dBm Test Frequency: 2.14GHz Supplier Device Package: PG-SOT343-3D Part Status: Not For New Designs |
на замовлення 21000 шт: термін постачання 21-31 дні (днів) |
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BGA628L7E6327XTMA1 | Infineon Technologies |
Description: IC RF AMP GP 400MHZ-6GHZ TSLP7-8Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 400MHz ~ 6GHz RF Type: General Purpose Voltage - Supply: 2.75V Gain: 21.5dB Current - Supply: 5.8mA Noise Figure: 0.75dB P1dB: -20.5dBm Test Frequency: 1575.42MHz Supplier Device Package: PG-TSLP-7-8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGA711L7E6327XTSA1 | Infineon Technologies |
Description: IC AMP UMTS 1.9GHZ 2.1GHZ TSLP7Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 1.9GHz, 2.1GHz RF Type: UMTS Voltage - Supply: 2.6V ~ 3V Gain: 17dB Current - Supply: 3.6mA Noise Figure: 1.1dB P1dB: -8dBm Test Frequency: 2.1GHz Supplier Device Package: PG-TSLP-7-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGA735N16E6327XTSA1 | Infineon Technologies |
Description: IC AMP UMTS 800MHZ 900MHZ TSNP16Packaging: Tape & Reel (TR) Package / Case: 16-XFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz RF Type: UMTS Voltage - Supply: 3.6V Gain: 16dB Current - Supply: 10mA Noise Figure: 1.1dB P1dB: -6dBm Supplier Device Package: TSNP-16-1 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGA748L16E6327XTSA1 | Infineon Technologies |
Description: IC AMP UMTS 800MHZ 900MHZ TSLP16Packaging: Tape & Reel (TR) Package / Case: 16-XFQFN Exposed Pad Mounting Type: Surface Mount Frequency: 800MHz, 900MHz, 1.9GHz, 2.1GHz RF Type: UMTS Voltage - Supply: 3.6V Gain: 16dB Current - Supply: 10mA Noise Figure: 1.1dB P1dB: -7dBm Test Frequency: 880MHz Supplier Device Package: TSLP-16-1 |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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BGA751L7E6327XTSA1 | Infineon Technologies |
Description: IC AMP UMTS 800MHZ 900MHZ TSLP7Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 800MHz, 900MHz RF Type: UMTS Voltage - Supply: 2.6V ~ 3V Gain: 15.8dB Current - Supply: 3.3mA Noise Figure: 1.05dB P1dB: -5dBm Test Frequency: 800MHz Supplier Device Package: PG-TSLP-7-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGA777L7E6327XTSA1 | Infineon Technologies |
Description: IC AMP UMTS 2.3/2.7GHZ TSLP7-1Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 2.3GHz, 2.7GHz RF Type: UMTS Voltage - Supply: 2.6V ~ 3V Gain: 16.8dB Current - Supply: 10mA Noise Figure: 1.2dB P1dB: -11dBm Test Frequency: 2.3GHz Supplier Device Package: PG-TSLP-7-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGB707L7ESDE6327XTSA1 | Infineon Technologies |
Description: IC RF AMP 802.11A/B/G/N TSLP7-1Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 2.3GHz, 2.7GHz RF Type: 802.11a/b/g/n Voltage - Supply: 1.8V ~ 4V Gain: 27dB Current - Supply: 25mA Noise Figure: 0.7dB P1dB: 8dBm Test Frequency: 1.5GHz Supplier Device Package: PG-TSLP-7-1 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGB717L7ESDE6327XTSA1 | Infineon Technologies |
Description: IC AMP FM 76MHZ-108MHZ TSLP7-1Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 76MHz ~ 108MHz RF Type: FM Voltage - Supply: 1.8V ~ 4V Gain: 12dB Current - Supply: 3mA Noise Figure: 1dB P1dB: -5.5dBm Test Frequency: 100MHz Supplier Device Package: PG-TSLP-7-1 Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGB717L7ESDE6433XTMA1 | Infineon Technologies |
Description: IC AMP MMIC LN TSLP7-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGB741L7ESDE6327XTSA1 | Infineon Technologies |
Description: IC AMP CELL 50MHZ-3.5GHZ TSLP7-1Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 50MHz ~ 3.5GHz RF Type: Cellular, RKE, WiFi Voltage - Supply: 1.8V ~ 4V Gain: 19.5dB Current - Supply: 30mA Noise Figure: 1dB P1dB: -6.5dBm Test Frequency: 1.5GHz Supplier Device Package: PG-TSLP-7-1 |
на замовлення 37500 шт: термін постачання 21-31 дні (днів) |
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BGF104CE6328XTSA1 | Infineon Technologies |
Description: IC HSMMC FILTER/ESD PROT WLP-16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGF108CE6328XTSA1 | Infineon Technologies |
Description: FILTER RC 70 OHMS/17PF ESD SMDPackaging: Tape & Reel (TR) Voltage - Rated: 5V Package / Case: 18-UFBGA, WLCSP Size / Dimension: 0.079" L x 0.066" W (2.02mm x 1.68mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 70Ohms, C = 17pF Height: 0.026" (0.65mm) Attenuation Value: 45dB @ 800MHz ~ 2GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC Resistance - Channel (Ohms): 70 ESD Protection: Yes Number of Channels: 7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGF112E6328XTSA1 | Infineon Technologies |
Description: FILTER RC(PI) 15 OHM/0.005UF SMDPackaging: Tape & Reel (TR) Package / Case: 5-UFBGA, WLCSP Size / Dimension: 0.046" L x 0.030" W (1.16mm x 0.76mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 15Ohms, C = 5000pF Height: 0.026" (0.65mm) Attenuation Value: 30dB @ 30MHz ~ 1.5GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Resistance - Channel (Ohms): 15 ESD Protection: Yes Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGF113E6328XTSA1 | Infineon Technologies | Description: IC FILTER/ESD PROT WLP-8-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGF119E6329XTSA1 | Infineon Technologies |
Description: TVS DIODE 8VWM 13VC S-WLP-4Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLCSP Mounting Type: Surface Mount Type: Zener Operating Temperature: -30°C ~ 85°C (TA) Applications: General Purpose Voltage - Reverse Standoff (Typ): 8V (Max) Supplier Device Package: WLP-4-1 Unidirectional Channels: 1 Voltage - Breakdown (Min): 10V Voltage - Clamping (Max) @ Ipp: 13V Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGM781N11E6327XUSA1 | Infineon Technologies |
Description: MODULE GPS FRONT-END TSNP-11-2Packaging: Tape & Reel (TR) Package / Case: 10-WFDFN Exposed Pad Frequency: 1575.42MHz RF Type: GPS Supplier Device Package: PG-TSNP-11 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGR405H6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 5V PG-SOT-343 3DPackaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Power - Max: 50mW Current - Collector (Ic) (Max): 12mA Voltage - Collector Emitter Breakdown (Max): 5V Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 400MHz ~ 1.8GHz Supplier Device Package: PG-SOT343-3D Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGR420H6327XTSA1 | Infineon Technologies |
Description: RF TRANS NPN 13V SOT343-4Packaging: Tape & Reel (TR) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Power - Max: 120mW Current - Collector (Ic) (Max): 25mA Voltage - Collector Emitter Breakdown (Max): 13V Noise Figure (dB Typ @ f): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz Supplier Device Package: PG-SOT343-3D |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BGS 12AL7-6 E6327 | Infineon Technologies |
Description: IC SWITCH RF SPDT TSLP7-6 |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BSB015N04NX3GXUMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 36A/180A 2WDSONPackaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSB017N03LX3 G | Infineon Technologies |
Description: MOSFET N-CH 30V 32A/147A 2WDSONPackaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 147A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSB024N03LX G | Infineon Technologies |
Description: MOSFET N-CH 30V 27A/145A 2WDSONPackaging: Tape & Reel (TR) Package / Case: 3-WDSON Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 145A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V Power Dissipation (Max): 2.8W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: MG-WDSON-2, CanPAK M™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSC042NE7NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 75V 19A/100A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 91µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 37.5 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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BSC060P03NS3EGATMA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 17.7/100A 8TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.1V @ 150µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSC077N12NS3 G | Infineon Technologies |
Description: MOSFET N-CH 120V 98A 8TDSON |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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BSC084P03NS3GATMA1 | Infineon Technologies |
Description: MOSFET P-CH 30V 14.9A 8TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 3.1V @ 105µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSC160N10NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 8.8A/42A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 33A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 33µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSC190N12NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 120V 8.6A/44A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 39A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 4V @ 42µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSC320N20NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 200V 36A TDSON-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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BSC440N10NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 5.3A/18A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 12µA Supplier Device Package: PG-TDSON-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 50 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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BSC520N15NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 150V 21A TDSON-8-5Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 35µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSC600N25NS3GATMA1 | Infineon Technologies |
Description: MOSFET N-CH 250V 25A TDSON-8-1Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 90µA Supplier Device Package: PG-TDSON-8-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSD816SNL6327HTSA1 | Infineon Technologies |
Description: MOSFET N-CH 20V 1.4A SOT363-6Packaging: Tape & Reel (TR) Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 3.7µA Supplier Device Package: PG-SOT363-PO Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. |
| BFR183WH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
товару немає в наявності
В кошику
од. на суму грн.
| BFR193FH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-TSFP-3
Part Status: Active
Description: RF TRANS NPN 12V 8GHZ PG-TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 12.5dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-TSFP-3
Part Status: Active
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.00 грн |
| 6000+ | 8.41 грн |
| 9000+ | 8.28 грн |
| 15000+ | 7.64 грн |
| 21000+ | 7.56 грн |
| BFR193WH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
Description: RF TRANS NPN 12V 8GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 16dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.00 грн |
| 6000+ | 8.41 грн |
| 9000+ | 8.28 грн |
| BFR340FH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 28dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
Supplier Device Package: PG-TSFP-3
Part Status: Active
Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 13dB ~ 28dB
Power - Max: 75mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 100MHz ~ 2.4GHz
Supplier Device Package: PG-TSFP-3
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| BFR360FH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Supplier Device Package: PG-TSFP-3
Part Status: Active
Description: RF TRANS NPN 9V 14GHZ PG-TSFP-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15.5dB
Power - Max: 210mW
Current - Collector (Ic) (Max): 35mA
Voltage - Collector Emitter Breakdown (Max): 9V
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
Frequency - Transition: 14GHz
Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
Supplier Device Package: PG-TSFP-3
Part Status: Active
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 9.00 грн |
| 6000+ | 8.41 грн |
| 9000+ | 8.28 грн |
| 15000+ | 7.64 грн |
| 21000+ | 7.56 грн |
| 30000+ | 7.48 грн |
| BFR720L3RHE6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS RF NPN 4V 20MA TSLP-3
Description: TRANS RF NPN 4V 20MA TSLP-3
товару немає в наявності
В кошику
од. на суму грн.
| BFR92WH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: RF TRANS NPN 15V 5GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11.5dB ~ 17dB
Power - Max: 280mW
Current - Collector (Ic) (Max): 45mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Obsolete
Description: RF TRANS NPN 15V 5GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Gain: 11.5dB ~ 17dB
Power - Max: 280mW
Current - Collector (Ic) (Max): 45mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 5GHz
Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Obsolete
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| BFR93AWH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 6GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 15.5dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
Description: RF TRANS NPN 12V 6GHZ PG-SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 10.5dB ~ 15.5dB
Power - Max: 300mW
Current - Collector (Ic) (Max): 90mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
Frequency - Transition: 6GHz
Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT323
Part Status: Active
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 8.99 грн |
| 6000+ | 8.40 грн |
| 9000+ | 8.27 грн |
| 15000+ | 7.63 грн |
| 21000+ | 7.55 грн |
| BFS17SH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: RF TRANS 2NPN 15V 1.4GHZ SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Description: RF TRANS 2NPN 15V 1.4GHZ SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 800MHz
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
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| BFS17WH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: RF TRANS NPN 15V 1.4GHZ PGSOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Supplier Device Package: PG-SOT323
Part Status: Not For New Designs
Description: RF TRANS NPN 15V 1.4GHZ PGSOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 280mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
Supplier Device Package: PG-SOT323
Part Status: Not For New Designs
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| BFS481H6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT363-PO
Part Status: Active
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT363-PO
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 17.89 грн |
| BFS483H6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT363-PO
Part Status: Active
Description: RF TRANS 2 NPN 12V 8GHZ SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 450mW
Current - Collector (Ic) (Max): 65mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT363-PO
Part Status: Active
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 21.82 грн |
| BFY193PZZZA1 |
![]() |
Виробник: Infineon Technologies
Description: RF TRANS NPN 12V 7.5GHZ MICRO-X1
Packaging: Box
Package / Case: MICRO-X1
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 12.5dB ~ 13.5dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 2.3dB ~ 2.9dB @ 2GHz
Supplier Device Package: MICRO-X1
Description: RF TRANS NPN 12V 7.5GHZ MICRO-X1
Packaging: Box
Package / Case: MICRO-X1
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 12.5dB ~ 13.5dB
Power - Max: 580mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 8V
Frequency - Transition: 7.5GHz
Noise Figure (dB Typ @ f): 2.3dB ~ 2.9dB @ 2GHz
Supplier Device Package: MICRO-X1
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| BG3123H6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH DUAL 8V 25MA SOT363
Description: MOSFET N-CH DUAL 8V 25MA SOT363
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В кошику
од. на суму грн.
| BG3123RH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA, 20mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.8dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA, 20mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.8dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
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В кошику
од. на суму грн.
| BG3130H6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
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од. на суму грн.
| BG3130RH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
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од. на суму грн.
| BG3430RH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 25dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 14 mA
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| BG5120KH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 20mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 23dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.1dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
Description: RF MOSFET 5V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 20mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 23dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.1dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 5 V
Current - Test: 10 mA
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| BG5412KH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH DUAL 8V 25MA SOT363
Description: MOSFET N-CH DUAL 8V 25MA SOT363
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| BGA420H6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 37.19 грн |
| BGA420H6433XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 3V ~ 6V
Gain: 13dB
Current - Supply: 6.7mA
Noise Figure: 2.3dB
P1dB: -2.5dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
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| BGA427H6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 2V ~ 5V
Gain: 18.5dB
Current - Supply: 25mA
Noise Figure: 2.2dB
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Not For New Designs
Description: IC RF AMP GPS 0HZ-3GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 3GHz
RF Type: General Purpose
Voltage - Supply: 2V ~ 5V
Gain: 18.5dB
Current - Supply: 25mA
Noise Figure: 2.2dB
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Not For New Designs
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 37.13 грн |
| 6000+ | 34.37 грн |
| BGA428H6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC AMP GPS 100MHZ-6GHZ SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 100MHz ~ 6GHz
RF Type: General Purpose
Voltage - Supply: 2.4V ~ 3V
Gain: 20dB
Current - Supply: 8.2mA
Noise Figure: 1.4dB
P1dB: -19dBm
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT363-PO
Description: IC AMP GPS 100MHZ-6GHZ SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Frequency: 100MHz ~ 6GHz
RF Type: General Purpose
Voltage - Supply: 2.4V ~ 3V
Gain: 20dB
Current - Supply: 8.2mA
Noise Figure: 1.4dB
P1dB: -19dBm
Test Frequency: 1.8GHz
Supplier Device Package: PG-SOT363-PO
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од. на суму грн.
| BGA614H6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC AMP CDMA 0HZ-2.4GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.4GHz
RF Type: CDMA, GSM, PCS
Gain: 19dB
Noise Figure: 2.1dB
P1dB: 12dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Description: IC AMP CDMA 0HZ-2.4GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.4GHz
RF Type: CDMA, GSM, PCS
Gain: 19dB
Noise Figure: 2.1dB
P1dB: 12dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
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| BGA616H6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC AMP CDMA 0HZ-2.7GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.7GHz
RF Type: CDMA, GSM, PCS
Gain: 19dB
Noise Figure: 2.5dB
P1dB: 18dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
Description: IC AMP CDMA 0HZ-2.7GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 0Hz ~ 2.7GHz
RF Type: CDMA, GSM, PCS
Gain: 19dB
Noise Figure: 2.5dB
P1dB: 18dBm
Test Frequency: 1GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 48.66 грн |
| 6000+ | 45.08 грн |
| 9000+ | 44.09 грн |
| BGA622H6820XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: IC AMP DCS 500MHZ-6GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: DCS, GSM, ISM
Voltage - Supply: 3.5V
Gain: 13.6dB
Current - Supply: 10mA
Noise Figure: 1.05dB
P1dB: -13dBm
Test Frequency: 2.14GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Not For New Designs
Description: IC AMP DCS 500MHZ-6GHZ SOT343-3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Frequency: 500MHz ~ 6GHz
RF Type: DCS, GSM, ISM
Voltage - Supply: 3.5V
Gain: 13.6dB
Current - Supply: 10mA
Noise Figure: 1.05dB
P1dB: -13dBm
Test Frequency: 2.14GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Not For New Designs
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 48.35 грн |
| 6000+ | 44.79 грн |
| 9000+ | 43.81 грн |
| 15000+ | 40.00 грн |
| BGA628L7E6327XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC RF AMP GP 400MHZ-6GHZ TSLP7-8
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 400MHz ~ 6GHz
RF Type: General Purpose
Voltage - Supply: 2.75V
Gain: 21.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: -20.5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSLP-7-8
Description: IC RF AMP GP 400MHZ-6GHZ TSLP7-8
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 400MHz ~ 6GHz
RF Type: General Purpose
Voltage - Supply: 2.75V
Gain: 21.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: -20.5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSLP-7-8
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| BGA711L7E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP UMTS 1.9GHZ 2.1GHZ TSLP7
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 17dB
Current - Supply: 3.6mA
Noise Figure: 1.1dB
P1dB: -8dBm
Test Frequency: 2.1GHz
Supplier Device Package: PG-TSLP-7-1
Description: IC AMP UMTS 1.9GHZ 2.1GHZ TSLP7
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 17dB
Current - Supply: 3.6mA
Noise Figure: 1.1dB
P1dB: -8dBm
Test Frequency: 2.1GHz
Supplier Device Package: PG-TSLP-7-1
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| BGA735N16E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP UMTS 800MHZ 900MHZ TSNP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 3.6V
Gain: 16dB
Current - Supply: 10mA
Noise Figure: 1.1dB
P1dB: -6dBm
Supplier Device Package: TSNP-16-1
Part Status: Obsolete
Description: IC AMP UMTS 800MHZ 900MHZ TSNP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.8GHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 3.6V
Gain: 16dB
Current - Supply: 10mA
Noise Figure: 1.1dB
P1dB: -6dBm
Supplier Device Package: TSNP-16-1
Part Status: Obsolete
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| BGA748L16E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP UMTS 800MHZ 900MHZ TSLP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 3.6V
Gain: 16dB
Current - Supply: 10mA
Noise Figure: 1.1dB
P1dB: -7dBm
Test Frequency: 880MHz
Supplier Device Package: TSLP-16-1
Description: IC AMP UMTS 800MHZ 900MHZ TSLP16
Packaging: Tape & Reel (TR)
Package / Case: 16-XFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz, 1.9GHz, 2.1GHz
RF Type: UMTS
Voltage - Supply: 3.6V
Gain: 16dB
Current - Supply: 10mA
Noise Figure: 1.1dB
P1dB: -7dBm
Test Frequency: 880MHz
Supplier Device Package: TSLP-16-1
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7500+ | 77.85 грн |
| BGA751L7E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP UMTS 800MHZ 900MHZ TSLP7
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 15.8dB
Current - Supply: 3.3mA
Noise Figure: 1.05dB
P1dB: -5dBm
Test Frequency: 800MHz
Supplier Device Package: PG-TSLP-7-1
Description: IC AMP UMTS 800MHZ 900MHZ TSLP7
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 800MHz, 900MHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 15.8dB
Current - Supply: 3.3mA
Noise Figure: 1.05dB
P1dB: -5dBm
Test Frequency: 800MHz
Supplier Device Package: PG-TSLP-7-1
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| BGA777L7E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP UMTS 2.3/2.7GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 16.8dB
Current - Supply: 10mA
Noise Figure: 1.2dB
P1dB: -11dBm
Test Frequency: 2.3GHz
Supplier Device Package: PG-TSLP-7-1
Description: IC AMP UMTS 2.3/2.7GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: UMTS
Voltage - Supply: 2.6V ~ 3V
Gain: 16.8dB
Current - Supply: 10mA
Noise Figure: 1.2dB
P1dB: -11dBm
Test Frequency: 2.3GHz
Supplier Device Package: PG-TSLP-7-1
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| BGB707L7ESDE6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF AMP 802.11A/B/G/N TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: 802.11a/b/g/n
Voltage - Supply: 1.8V ~ 4V
Gain: 27dB
Current - Supply: 25mA
Noise Figure: 0.7dB
P1dB: 8dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
Description: IC RF AMP 802.11A/B/G/N TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz, 2.7GHz
RF Type: 802.11a/b/g/n
Voltage - Supply: 1.8V ~ 4V
Gain: 27dB
Current - Supply: 25mA
Noise Figure: 0.7dB
P1dB: 8dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Active
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| BGB717L7ESDE6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP FM 76MHZ-108MHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 76MHz ~ 108MHz
RF Type: FM
Voltage - Supply: 1.8V ~ 4V
Gain: 12dB
Current - Supply: 3mA
Noise Figure: 1dB
P1dB: -5.5dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Obsolete
Description: IC AMP FM 76MHZ-108MHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 76MHz ~ 108MHz
RF Type: FM
Voltage - Supply: 1.8V ~ 4V
Gain: 12dB
Current - Supply: 3mA
Noise Figure: 1dB
P1dB: -5.5dBm
Test Frequency: 100MHz
Supplier Device Package: PG-TSLP-7-1
Part Status: Obsolete
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| BGB717L7ESDE6433XTMA1 |
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Виробник: Infineon Technologies
Description: IC AMP MMIC LN TSLP7-1
Description: IC AMP MMIC LN TSLP7-1
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| BGB741L7ESDE6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP CELL 50MHZ-3.5GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 50MHz ~ 3.5GHz
RF Type: Cellular, RKE, WiFi
Voltage - Supply: 1.8V ~ 4V
Gain: 19.5dB
Current - Supply: 30mA
Noise Figure: 1dB
P1dB: -6.5dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
Description: IC AMP CELL 50MHZ-3.5GHZ TSLP7-1
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 50MHz ~ 3.5GHz
RF Type: Cellular, RKE, WiFi
Voltage - Supply: 1.8V ~ 4V
Gain: 19.5dB
Current - Supply: 30mA
Noise Figure: 1dB
P1dB: -6.5dBm
Test Frequency: 1.5GHz
Supplier Device Package: PG-TSLP-7-1
на замовлення 37500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7500+ | 40.64 грн |
| 15000+ | 37.67 грн |
| BGF104CE6328XTSA1 |
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Виробник: Infineon Technologies
Description: IC HSMMC FILTER/ESD PROT WLP-16
Description: IC HSMMC FILTER/ESD PROT WLP-16
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| BGF108CE6328XTSA1 |
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Виробник: Infineon Technologies
Description: FILTER RC 70 OHMS/17PF ESD SMD
Packaging: Tape & Reel (TR)
Voltage - Rated: 5V
Package / Case: 18-UFBGA, WLCSP
Size / Dimension: 0.079" L x 0.066" W (2.02mm x 1.68mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 70Ohms, C = 17pF
Height: 0.026" (0.65mm)
Attenuation Value: 45dB @ 800MHz ~ 2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC
Resistance - Channel (Ohms): 70
ESD Protection: Yes
Number of Channels: 7
Description: FILTER RC 70 OHMS/17PF ESD SMD
Packaging: Tape & Reel (TR)
Voltage - Rated: 5V
Package / Case: 18-UFBGA, WLCSP
Size / Dimension: 0.079" L x 0.066" W (2.02mm x 1.68mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 70Ohms, C = 17pF
Height: 0.026" (0.65mm)
Attenuation Value: 45dB @ 800MHz ~ 2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC
Resistance - Channel (Ohms): 70
ESD Protection: Yes
Number of Channels: 7
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| BGF112E6328XTSA1 |
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Виробник: Infineon Technologies
Description: FILTER RC(PI) 15 OHM/0.005UF SMD
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Size / Dimension: 0.046" L x 0.030" W (1.16mm x 0.76mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 15Ohms, C = 5000pF
Height: 0.026" (0.65mm)
Attenuation Value: 30dB @ 30MHz ~ 1.5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 15
ESD Protection: Yes
Number of Channels: 2
Description: FILTER RC(PI) 15 OHM/0.005UF SMD
Packaging: Tape & Reel (TR)
Package / Case: 5-UFBGA, WLCSP
Size / Dimension: 0.046" L x 0.030" W (1.16mm x 0.76mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 15Ohms, C = 5000pF
Height: 0.026" (0.65mm)
Attenuation Value: 30dB @ 30MHz ~ 1.5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 15
ESD Protection: Yes
Number of Channels: 2
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| BGF113E6328XTSA1 |
Виробник: Infineon Technologies
Description: IC FILTER/ESD PROT WLP-8-6
Description: IC FILTER/ESD PROT WLP-8-6
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| BGF119E6329XTSA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 8VWM 13VC S-WLP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -30°C ~ 85°C (TA)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: WLP-4-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
Description: TVS DIODE 8VWM 13VC S-WLP-4
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -30°C ~ 85°C (TA)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 8V (Max)
Supplier Device Package: WLP-4-1
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 13V
Power Line Protection: No
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| BGM781N11E6327XUSA1 |
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Виробник: Infineon Technologies
Description: MODULE GPS FRONT-END TSNP-11-2
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Frequency: 1575.42MHz
RF Type: GPS
Supplier Device Package: PG-TSNP-11
Description: MODULE GPS FRONT-END TSNP-11-2
Packaging: Tape & Reel (TR)
Package / Case: 10-WFDFN Exposed Pad
Frequency: 1575.42MHz
RF Type: GPS
Supplier Device Package: PG-TSNP-11
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| BGR405H6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 5V PG-SOT-343 3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 50mW
Current - Collector (Ic) (Max): 12mA
Voltage - Collector Emitter Breakdown (Max): 5V
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 400MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
Description: RF TRANS NPN 5V PG-SOT-343 3D
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 50mW
Current - Collector (Ic) (Max): 12mA
Voltage - Collector Emitter Breakdown (Max): 5V
Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 400MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Part Status: Obsolete
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| BGR420H6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF TRANS NPN 13V SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 120mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 13V
Noise Figure (dB Typ @ f): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
Description: RF TRANS NPN 13V SOT343-4
Packaging: Tape & Reel (TR)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Power - Max: 120mW
Current - Collector (Ic) (Max): 25mA
Voltage - Collector Emitter Breakdown (Max): 13V
Noise Figure (dB Typ @ f): 1.5dB ~ 1.7dB @ 400MHz ~ 1.8GHz
Supplier Device Package: PG-SOT343-3D
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| BGS 12AL7-6 E6327 |
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Виробник: Infineon Technologies
Description: IC SWITCH RF SPDT TSLP7-6
Description: IC SWITCH RF SPDT TSLP7-6
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BSB015N04NX3GXUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 36A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Description: MOSFET N-CH 40V 36A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
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| BSB017N03LX3 G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 32A/147A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 147A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 15 V
Description: MOSFET N-CH 30V 32A/147A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 147A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7800 pF @ 15 V
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| BSB024N03LX G |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 27A/145A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 15 V
Description: MOSFET N-CH 30V 27A/145A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 15 V
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| BSC042NE7NS3GATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 19A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 37.5 V
Description: MOSFET N-CH 75V 19A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 91µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 37.5 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 83.28 грн |
| BSC060P03NS3EGATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 17.7/100A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 15 V
Description: MOSFET P-CH 30V 17.7/100A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 15 V
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| BSC077N12NS3 G |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 98A 8TDSON
Description: MOSFET N-CH 120V 98A 8TDSON
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BSC084P03NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 14.9A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
Description: MOSFET P-CH 30V 14.9A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.9A (Ta), 78.6A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3.1V @ 105µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4785 pF @ 15 V
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од. на суму грн.
| BSC160N10NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 8.8A/42A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 33A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
Description: MOSFET N-CH 100V 8.8A/42A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 33A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 33µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 50 V
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| BSC190N12NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 120V 8.6A/44A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 39A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 42µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 60 V
Description: MOSFET N-CH 120V 8.6A/44A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 39A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 42µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 60 V
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од. на суму грн.
| BSC320N20NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 200V 36A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Description: MOSFET N-CH 200V 36A TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
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| BSC440N10NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 5.3A/18A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 50 V
Description: MOSFET N-CH 100V 5.3A/18A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 12µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 50 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 21.29 грн |
| 10000+ | 19.25 грн |
| BSC520N15NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 21A TDSON-8-5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
Description: MOSFET N-CH 150V 21A TDSON-8-5
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 18A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 75 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 29.39 грн |
| BSC600N25NS3GATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 25A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
Description: MOSFET N-CH 250V 25A TDSON-8-1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 25A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TDSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 103.78 грн |
| BSD816SNL6327HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 1.4A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 3.7µA
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
Description: MOSFET N-CH 20V 1.4A SOT363-6
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 3.7µA
Supplier Device Package: PG-SOT363-PO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
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од. на суму грн.

























