Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (121548) > Сторінка 2016 з 2026

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CY15B128Q-SXA INFINEON TECHNOLOGIES Infineon-CY15B128Q_128_Kbit_(16K_8)_Automotive_Serial_(SPI)_FRAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf864e49e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirI Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 40MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: SPI
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CY15B128Q-SXAT INFINEON TECHNOLOGIES Infineon-CY15B128Q_128_Kbit_(16K_8)_Automotive_Serial_(SPI)_FRAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf864e49e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirI Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 40MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: SPI
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CY15B128Q-SXE INFINEON TECHNOLOGIES Infineon-CY15B128Q-SXE-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee807ad70f9 Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.7...3.6V DC
Memory: 128kb FRAM
Clock frequency: 33MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: SPI
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CY15B128Q-SXET INFINEON TECHNOLOGIES Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 2.7...3.6V DC
Memory: 128kb FRAM
Clock frequency: 33MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: SPI
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FM18W08-SG FM18W08-SG INFINEON TECHNOLOGIES FM18W08-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2.7÷5.5VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 2.7...5.5V DC
Access time: 70ns
Case: SO28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
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IPP023N08N5AKSA1 IPP023N08N5AKSA1 INFINEON TECHNOLOGIES IPP023N08N5-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BCX42E6327 BCX42E6327 INFINEON TECHNOLOGIES BCX42E6327.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
на замовлення 1178 шт:
термін постачання 14-30 дні (днів)
20+23.48 грн
29+14.51 грн
100+8.97 грн
250+7.46 грн
500+6.46 грн
1000+6.04 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IRFS4310ZTRLPBF IRFS4310ZTRLPBF INFINEON TECHNOLOGIES irfb4310zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IAUC100N08S5N031ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 80V
Power dissipation: 167W
Pulsed drain current: 400A
Kind of channel: enhancement
Technology: OptiMOS™ 5
Mounting: SMD
Kind of package: reel; tape
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IAUC100N08S5N034ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Polarisation: unipolar
Gate charge: 66nC
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 80V
Power dissipation: 136W
Pulsed drain current: 400A
Kind of channel: enhancement
Technology: OptiMOS™ 5
Mounting: SMD
Kind of package: reel; tape
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IAUC100N08S5N043ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 80V
Power dissipation: 120W
Pulsed drain current: 400A
Kind of channel: enhancement
Technology: OptiMOS™ 5
Mounting: SMD
Kind of package: reel; tape
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IPB80N08S2L07ATMA1 IPB80N08S2L07ATMA1 INFINEON TECHNOLOGIES IPB80N08S2L07.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 183nC
Kind of channel: enhancement
Technology: OptiMOS™
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IAUA180N08S5N026AUMA1 INFINEON TECHNOLOGIES Infineon-IAUA180N08S5N026-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39a3760b35 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 546A
Power dissipation: 179W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IRFP3077PBF IRFP3077PBF INFINEON TECHNOLOGIES irfp3077pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Gate charge: 160nC
Technology: HEXFET®
Power dissipation: 340W
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IRFU120NPBF IRFU120NPBF INFINEON TECHNOLOGIES irfr120n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 16.7nC
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 2092 шт:
термін постачання 14-30 дні (днів)
7+72.25 грн
11+40.42 грн
25+36.57 грн
50+33.71 грн
75+32.04 грн
150+31.45 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CY15B104Q-LHXIT CY15B104Q-LHXIT INFINEON TECHNOLOGIES CY15B104Q-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 2÷3.6VDC; 40MHz; TDFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: TDFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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CY15B104Q-SXIT CY15B104Q-SXIT INFINEON TECHNOLOGIES CY15B104Q-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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FM1808B-SGTR FM1808B-SGTR INFINEON TECHNOLOGIES FM1808B-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 4.5÷5.5VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Interface: parallel 8bit
Kind of interface: parallel
Mounting: SMD
Case: SO28
Operating temperature: -40...85°C
Access time: 70ns
Supply voltage: 4.5...5.5V DC
Memory: 256kb FRAM
Memory organisation: 32kx8bit
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BCX41E6327 BCX41E6327 INFINEON TECHNOLOGIES BCX41.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
на замовлення 1010 шт:
термін постачання 14-30 дні (днів)
20+23.48 грн
21+20.13 грн
50+15.35 грн
100+12.58 грн
250+9.31 грн
500+7.38 грн
1000+6.04 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IRFP4868PBF IRFP4868PBF INFINEON TECHNOLOGIES IRFP4868PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Gate charge: 180nC
Technology: HEXFET®
Power dissipation: 517W
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IRFP4868PBFAKMA1 INFINEON TECHNOLOGIES Infineon-IRFP4868-DataSheet-v01_00-EN.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
2+321.53 грн
3+269.21 грн
10+237.34 грн
25+220.56 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFB4229PBF IRFB4229PBF INFINEON TECHNOLOGIES irfb4229pbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 142 шт:
термін постачання 14-30 дні (днів)
3+212.24 грн
10+124.12 грн
50+88.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TDA21472AUMA1 INFINEON TECHNOLOGIES Infineon-TDA21472-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d175ca2e1448e Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; PQFN; 70A; Ch: 1; MOSFET; 4.25÷16V
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Mounting: SMD
Supply voltage: 4.25...16V
Number of channels: 1
Case: PQFN
Output current: 70A
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)
5000+272.75 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IRF100P219AKMA1 INFINEON TECHNOLOGIES Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 316A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IRFP4310ZPBFXKMA1 INFINEON TECHNOLOGIES Infineon_IRFP4310Z_DataSheet_v01_01_EN-3363303.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB017N10N5ATMA1 IPB017N10N5ATMA1 INFINEON TECHNOLOGIES IPB017N10N5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPB017N06N3GATMA1 IPB017N06N3GATMA1 INFINEON TECHNOLOGIES IPB017N06N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPB017N10N5LFATMA1 INFINEON TECHNOLOGIES Infineon-IPB017N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b379cf73c7f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 313W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 313W
Case: D2PAK-7
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhancement
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IRS4427PBF IRS4427PBF INFINEON TECHNOLOGIES IRS4427PBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W
Kind of package: tube
Mounting: THT
Operating temperature: -40...125°C
Output current: -3.3...2.3A
Turn-off time: 50ns
Turn-on time: 50ns
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Topology: MOSFET half-bridge
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IRS4426SPBF IRS4426SPBF INFINEON TECHNOLOGIES IRSDS11546-1.pdf?t.download=true&u=5oefqw Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Kind of package: tube
Operating temperature: -40...125°C
Output current: -3.3...2.3A
Turn-on time: 50ns
Turn-off time: 50ns
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Topology: MOSFET half-bridge
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IRF7503TRPBF IRF7503TRPBF INFINEON TECHNOLOGIES irf7503pbf.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.4A; 1.25W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET x2
Kind of package: reel
Power dissipation: 1.25W
Drain current: 2.4A
Drain-source voltage: 30V
Polarisation: unipolar
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CY62177EV30LL-55BAXIT INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62177EV30LL-55BAXI INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.2÷3.6V; 55ns; FBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
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CY62177EV30LL-55ZXI INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.2÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
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CY62177EV18LL-70BAXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 70ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.25V DC
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CY62177EV30LL-55ZXIT INFINEON TECHNOLOGIES Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62146ELL-45ZSXI CY62146ELL-45ZSXI INFINEON TECHNOLOGIES Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 4.5÷5.5V; 45ns; TSOP44 II
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Access time: 45ns
Operating voltage: 4.5...5.5V
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
на замовлення 91 шт:
термін постачання 14-30 дні (днів)
1+1121.73 грн
В кошику  од. на суму  грн.
CY62146EV30LL-45BVXIT INFINEON TECHNOLOGIES Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62146EV30LL-45ZSXIT INFINEON TECHNOLOGIES Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62147EV18LL-55BVXIT INFINEON TECHNOLOGIES ?docID=45535 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 55ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.25V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62147EV30LL-45B2XIT INFINEON TECHNOLOGIES ?docID=45537 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62147EV30LL-45BVXIT INFINEON TECHNOLOGIES CY62147EV30_MoBL_RevT_6-26-20.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62147EV30LL-45ZSXIT INFINEON TECHNOLOGIES CY62147EV30_MoBL_RevT_6-26-20.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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IKQ50N120CH3XKSA1 IKQ50N120CH3XKSA1 INFINEON TECHNOLOGIES IKQ50N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 173W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
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BSZ180P03NS3GATMA1 BSZ180P03NS3GATMA1 INFINEON TECHNOLOGIES BSZ180P03NS3GATMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -39.6A
Drain-source voltage: -30V
On-state resistance: 40mΩ
Power dissipation: 40W
Gate-source voltage: ±25V
Case: PG-TSDSON-8
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BSZ180P03NS3EGATMA1 BSZ180P03NS3EGATMA1 INFINEON TECHNOLOGIES BSZ180P03NS3EGATMA-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -39.6A
Drain-source voltage: -30V
On-state resistance: 18mΩ
Power dissipation: 40W
Gate-source voltage: ±25V
Case: PG-TSDSON-8
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BGSA14GN10E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Case: TSNP10
Application: telecommunication
Type of integrated circuit: RF switch
Mounting: SMD
Output configuration: SP4T
Supply voltage: 1.8...3.6V DC
Number of channels: 4
Bandwidth: 0.1...5GHz
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CY7C1041G30-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.2÷3.6V; 10ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Access time: 10ns
Operating voltage: 2.2...3.6V
Memory organisation: 256kx16bit
Memory: 4Mb SRAM
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CY7S1061G30-10BVXI INFINEON TECHNOLOGIES Infineon-CY7S1061G_CY7S1061GE_16-Mbit_(1_M_words_16_bit)_Static_RAM_with_Deep-Sleep_Feature_and_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec35ea53850&utm_source=cypress&utm_medium=referra Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 1Mx16bit
Memory: 16Mb SRAM
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CY7C1051H30-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1051H_8_Mbit_(512K_Words_X_16_Bit)_Static_RAM_with_Error_Correcting_Code_(ECC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1d15667e0&utm_source=cypress&utm_medium=referral&utm_campa Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx16bit
Memory: 8Mb SRAM
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CY7C1061G30-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 1Mx16bit
Memory: 16Mb SRAM
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CY7C1069G30-10BVXI INFINEON TECHNOLOGIES Infineon-CY7C1069G_CY7C1069GE_16-Mbit_(2_M_words_8_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec36baa3861 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 2Mx8bit
Memory: 16Mb SRAM
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S29GL128P11FFI020
+1
 		S29GL128P11FFI020 INFINEON TECHNOLOGIES 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Kind of interface: parallel
Mounting: SMD
Case: BGA64
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
на замовлення 61 шт:
термін постачання 14-30 дні (днів)
1+562.67 грн
5+499.00 грн
25+452.87 грн
В кошику  од. на суму  грн.
S25FL256LAGNFV010 S25FL256LAGNFV010 INFINEON TECHNOLOGIES S25FL.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 1512 шт:
термін постачання 14-30 дні (днів)
2+430.81 грн
5+370.68 грн
10+345.52 грн
25+327.07 грн
100+309.46 грн
338+297.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S25FL127SABNFI101 S25FL127SABNFI101 INFINEON TECHNOLOGIES Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 108MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating frequency: 108MHz
Case: WSON8
Part status: Not recommended for new designs
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
2+401.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BAS28E6327HTSA1 BAS28E6327HTSA1 INFINEON TECHNOLOGIES BAS28E6327HTSA1.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT143; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
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SPW55N80C3FKSA1 INFINEON TECHNOLOGIES Infineon-SPW55N80C3-DS-v02_00-en.pdf?fileId=db3a3043337a914d0133878821c910bb Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 34.7A
Pulsed drain current: 150A
Power dissipation: 500W
Case: PG-TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BAT60BE6359HTMA1 INFINEON TECHNOLOGIES Infineon-BAT60BSERIES-DS-v01_01-en.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
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IPW60R099P6XKSA1 IPW60R099P6XKSA1 INFINEON TECHNOLOGIES IPW60R099P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 64 шт:
термін постачання 14-30 дні (днів)
2+290.17 грн
10+223.92 грн
20+193.73 грн
30+179.47 грн
60+167.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R099CPFKSA1 IPW60R099CPFKSA1 INFINEON TECHNOLOGIES IPW60R099CP.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
1+468.74 грн
5+418.49 грн
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CY15B128Q-SXA Infineon-CY15B128Q_128_Kbit_(16K_8)_Automotive_Serial_(SPI)_FRAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf864e49e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirI
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 40MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: SPI
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CY15B128Q-SXAT Infineon-CY15B128Q_128_Kbit_(16K_8)_Automotive_Serial_(SPI)_FRAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf864e49e8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirI
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2÷3.6VDC; 40MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 40MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: SPI
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CY15B128Q-SXE Infineon-CY15B128Q-SXE-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee807ad70f9
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 2.7...3.6V DC
Memory: 128kb FRAM
Clock frequency: 33MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: SPI
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CY15B128Q-SXET
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; SPI; 16kx8bit; 2.7÷3.6VDC; 33MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Supply voltage: 2.7...3.6V DC
Memory: 128kb FRAM
Clock frequency: 33MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: SPI
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FM18W08-SG FM18W08-DTE.pdf
FM18W08-SG
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 2.7÷5.5VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 256kb FRAM
Interface: parallel 8bit
Memory organisation: 32kx8bit
Supply voltage: 2.7...5.5V DC
Access time: 70ns
Case: SO28
Mounting: SMD
Kind of interface: parallel
Operating temperature: -40...85°C
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IPP023N08N5AKSA1 IPP023N08N5-DTE.pdf
IPP023N08N5AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BCX42E6327 BCX42E6327.pdf
BCX42E6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
на замовлення 1178 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.48 грн
29+14.51 грн
100+8.97 грн
250+7.46 грн
500+6.46 грн
1000+6.04 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IRFS4310ZTRLPBF irfb4310zpbf.pdf
IRFS4310ZTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 127A; 250W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 127A
Power dissipation: 250W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IAUC100N08S5N031ATMA1 Infineon-IAUC100N08S5N031-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a54445630016
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 167W
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 100A
Drain-source voltage: 80V
Power dissipation: 167W
Pulsed drain current: 400A
Kind of channel: enhancement
Technology: OptiMOS™ 5
Mounting: SMD
Kind of package: reel; tape
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IAUC100N08S5N034ATMA1 Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 22A; Idm: 400A; 136W
Case: PG-TDSON-8
Polarisation: unipolar
Gate charge: 66nC
On-state resistance: 4.8mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 22A
Drain-source voltage: 80V
Power dissipation: 136W
Pulsed drain current: 400A
Kind of channel: enhancement
Technology: OptiMOS™ 5
Mounting: SMD
Kind of package: reel; tape
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IAUC100N08S5N043ATMA1 Infineon-IAUC100N08S5N043-DS-v01_00-EN.pdf?fileId=5546d46266a498f50166a528eb6b0010
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 76A; Idm: 400A; 120W
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 4.3mΩ
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Drain current: 76A
Drain-source voltage: 80V
Power dissipation: 120W
Pulsed drain current: 400A
Kind of channel: enhancement
Technology: OptiMOS™ 5
Mounting: SMD
Kind of package: reel; tape
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IPB80N08S2L07ATMA1 IPB80N08S2L07.pdf
IPB80N08S2L07ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 183nC
Kind of channel: enhancement
Technology: OptiMOS™
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IAUA180N08S5N026AUMA1 Infineon-IAUA180N08S5N026-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f01798e39a3760b35
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 25A; Idm: 546A; 179W; PG-HSOF-5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 25A
Pulsed drain current: 546A
Power dissipation: 179W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IRFP3077PBF irfp3077pbf.pdf
IRFP3077PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 200A; 340W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 200A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 3.3mΩ
Gate-source voltage: ±20V
Gate charge: 160nC
Technology: HEXFET®
Power dissipation: 340W
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IRFU120NPBF irfr120n.pdf
IRFU120NPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.1A; 39W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.1A
Power dissipation: 39W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 16.7nC
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 2092 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+72.25 грн
11+40.42 грн
25+36.57 грн
50+33.71 грн
75+32.04 грн
150+31.45 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CY15B104Q-LHXIT CY15B104Q-DTE.pdf
CY15B104Q-LHXIT
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 2÷3.6VDC; 40MHz; TDFN8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: TDFN8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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CY15B104Q-SXIT CY15B104Q-DTE.pdf
CY15B104Q-SXIT
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4MbFRAM; SPI; 512kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4Mb FRAM
Interface: SPI
Memory organisation: 512kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
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FM1808B-SGTR FM1808B-DTE.pdf
FM1808B-SGTR
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; parallel 8bit; 32kx8bit; 4.5÷5.5VDC
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Interface: parallel 8bit
Kind of interface: parallel
Mounting: SMD
Case: SO28
Operating temperature: -40...85°C
Access time: 70ns
Supply voltage: 4.5...5.5V DC
Memory: 256kb FRAM
Memory organisation: 32kx8bit
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BCX41E6327 BCX41.pdf
BCX41E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 125V; 0.8A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 125V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
на замовлення 1010 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.48 грн
21+20.13 грн
50+15.35 грн
100+12.58 грн
250+9.31 грн
500+7.38 грн
1000+6.04 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IRFP4868PBF IRFP4868PBF.pdf
IRFP4868PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 517W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Gate charge: 180nC
Technology: HEXFET®
Power dissipation: 517W
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IRFP4868PBFAKMA1 Infineon-IRFP4868-DataSheet-v01_00-EN.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 70A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+321.53 грн
3+269.21 грн
10+237.34 грн
25+220.56 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFB4229PBF irfb4229pbf.pdf
IRFB4229PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 142 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+212.24 грн
10+124.12 грн
50+88.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TDA21472AUMA1 Infineon-TDA21472-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016d175ca2e1448e
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; PQFN; 70A; Ch: 1; MOSFET; 4.25÷16V
Type of integrated circuit: driver
Integrated circuit features: MOSFET
Mounting: SMD
Supply voltage: 4.25...16V
Number of channels: 1
Case: PQFN
Output current: 70A
Kind of integrated circuit: high-side; low-side
Operating temperature: -40...125°C
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5000+272.75 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IRF100P219AKMA1 Infineon-IRF100P219-DataSheet-v02_01-EN.pdf?fileId=5546d462602a9dc80160e20d52df4b86
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 316A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 316A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IRFP4310ZPBFXKMA1 Infineon_IRFP4310Z_DataSheet_v01_01_EN-3363303.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 134A; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 134A
Case: TO247AC
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB017N10N5ATMA1 IPB017N10N5-DTE.pdf
IPB017N10N5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 375W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 375W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
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IPB017N06N3GATMA1 IPB017N06N3G-DTE.pdf
IPB017N06N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 180A; 250W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 180A
Power dissipation: 250W
Case: PG-TO263-7
Gate-source voltage: ±20V
On-state resistance: 1.7mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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IPB017N10N5LFATMA1 Infineon-IPB017N10N5LF-DS-v02_01-EN.pdf?fileId=5546d46259d9a4bf015a5b379cf73c7f
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 313W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 313W
Case: D2PAK-7
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 195nC
Kind of channel: enhancement
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IRS4427PBF IRS4427PBF.pdf
IRS4427PBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; DIP8; 1W
Kind of package: tube
Mounting: THT
Operating temperature: -40...125°C
Output current: -3.3...2.3A
Turn-off time: 50ns
Turn-on time: 50ns
Power: 1W
Number of channels: 2
Supply voltage: 6...20V DC
Case: DIP8
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Topology: MOSFET half-bridge
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IRS4426SPBF IRSDS11546-1.pdf?t.download=true&u=5oefqw
IRS4426SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; SO8; 625mW
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: gate driver; low-side
Kind of package: tube
Operating temperature: -40...125°C
Output current: -3.3...2.3A
Turn-on time: 50ns
Turn-off time: 50ns
Power: 625mW
Number of channels: 2
Supply voltage: 6...20V DC
Topology: MOSFET half-bridge
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IRF7503TRPBF irf7503pbf.pdf
IRF7503TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.4A; 1.25W; SO8
Mounting: SMD
Case: SO8
Kind of channel: enhancement
Technology: HEXFET®
Type of transistor: N-MOSFET x2
Kind of package: reel
Power dissipation: 1.25W
Drain current: 2.4A
Drain-source voltage: 30V
Polarisation: unipolar
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CY62177EV30LL-55BAXIT Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62177EV30LL-55BAXI Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.2÷3.6V; 55ns; FBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
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CY62177EV30LL-55ZXI Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 2.2÷3.6V; 45ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 45ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating voltage: 2.2...3.6V
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CY62177EV18LL-70BAXI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 70ns; FBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 70ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray
Supply voltage: 1.65...2.25V DC
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CY62177EV30LL-55ZXIT Infineon-CY62177EV30_MOBL_32_MBIT_(2M_X_16_4M_X_8)_STATIC_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebefcbd3300&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 32MbSRAM; 2Mx16bit; 55ns; TSOP48; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 32Mb SRAM
Memory organisation: 2Mx16bit
Access time: 55ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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CY62146ELL-45ZSXI Infineon-CY62146E_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebea9213270
CY62146ELL-45ZSXI
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 4.5÷5.5V; 45ns; TSOP44 II
Mounting: SMD
Kind of interface: parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Access time: 45ns
Operating voltage: 4.5...5.5V
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
на замовлення 91 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1121.73 грн
В кошику  од. на суму  грн.
CY62146EV30LL-45BVXIT Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62146EV30LL-45ZSXIT Infineon-CY62146EV30_MOBL_4_MBIT_(256K_X_16)_STATIC_RAM-DataSheet-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe5b4d31de&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62147EV18LL-55BVXIT ?docID=45535
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 55ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 55ns
Supply voltage: 1.65...2.25V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62147EV30LL-45B2XIT ?docID=45537
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
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CY62147EV30LL-45BVXIT CY62147EV30_MoBL_RevT_6-26-20.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; VFBGA48; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: VFBGA48
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
товару немає в наявності
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CY62147EV30LL-45ZSXIT CY62147EV30_MoBL_RevT_6-26-20.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 45ns; TSOP44 II; parallel
Mounting: SMD
Kind of interface: parallel
Kind of package: reel; tape
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Case: TSOP44 II
Operating temperature: -40...85°C
Access time: 45ns
Supply voltage: 2.2...3.6V DC
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
товару немає в наявності
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IKQ50N120CH3XKSA1 IKQ50N120CH3.pdf
IKQ50N120CH3XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247-3; H3
Type of transistor: IGBT
Power dissipation: 173W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
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BSZ180P03NS3GATMA1 BSZ180P03NS3GATMA1-DTE.pdf
BSZ180P03NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -39.6A
Drain-source voltage: -30V
On-state resistance: 40mΩ
Power dissipation: 40W
Gate-source voltage: ±25V
Case: PG-TSDSON-8
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BSZ180P03NS3EGATMA1 BSZ180P03NS3EGATMA-DTE.pdf
BSZ180P03NS3EGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -39.6A; 40W; PG-TSDSON-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -39.6A
Drain-source voltage: -30V
On-state resistance: 18mΩ
Power dissipation: 40W
Gate-source voltage: ±25V
Case: PG-TSDSON-8
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BGSA14GN10E6327XTSA1 Infineon-BGSA14GN10-DataSheet-v03_01-EN.pdf?fileId=5546d46255dd933d0155e9e3e86f09ff
Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Case: TSNP10
Application: telecommunication
Type of integrated circuit: RF switch
Mounting: SMD
Output configuration: SP4T
Supply voltage: 1.8...3.6V DC
Number of channels: 4
Bandwidth: 0.1...5GHz
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CY7C1041G30-10BVXI Infineon-CY7C1041G_CY7C1041GE_4-Mbit_(256K_words_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ece32d648bc&utm_source=cypress&utm_medium=referral&utm_campaign=202110_g
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 2.2÷3.6V; 10ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Access time: 10ns
Operating voltage: 2.2...3.6V
Memory organisation: 256kx16bit
Memory: 4Mb SRAM
товару немає в наявності
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CY7S1061G30-10BVXI Infineon-CY7S1061G_CY7S1061GE_16-Mbit_(1_M_words_16_bit)_Static_RAM_with_Deep-Sleep_Feature_and_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec35ea53850&utm_source=cypress&utm_medium=referra
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 1Mx16bit
Memory: 16Mb SRAM
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CY7C1051H30-10BVXI Infineon-CY7C1051H_8_Mbit_(512K_Words_X_16_Bit)_Static_RAM_with_Error_Correcting_Code_(ECC)-AdditionalTechnicalInformation-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1d15667e0&utm_source=cypress&utm_medium=referral&utm_campa
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx16bit
Memory: 8Mb SRAM
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CY7C1061G30-10BVXI Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 1Mx16bit
Memory: 16Mb SRAM
товару немає в наявності
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CY7C1069G30-10BVXI Infineon-CY7C1069G_CY7C1069GE_16-Mbit_(2_M_words_8_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec36baa3861
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2Mx8bit; 10ns; VFBGA48; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: VFBGA48
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 2Mx8bit
Memory: 16Mb SRAM
товару немає в наявності
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S29GL128P11FFI020 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P11FFI020
+1
Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 128MbFLASH; CFI,parallel; BGA64; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: CFI; parallel
Kind of interface: parallel
Mounting: SMD
Case: BGA64
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
на замовлення 61 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+562.67 грн
5+499.00 грн
25+452.87 грн
В кошику  од. на суму  грн.
S25FL256LAGNFV010 S25FL.pdf
S25FL256LAGNFV010
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; SPI; 133MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 1512 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+430.81 грн
5+370.68 грн
10+345.52 грн
25+327.07 грн
100+309.46 грн
338+297.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S25FL127SABNFI101 Infineon-S25FL127S_128-Mb_(16_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfa58c49f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL127SABNFI101
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 128MbFLASH; SPI; 108MHz; 2.7÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 128Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating frequency: 108MHz
Case: WSON8
Part status: Not recommended for new designs
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+401.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BAS28E6327HTSA1 BAS28E6327HTSA1.pdf
BAS28E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 4ns; SOT143; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: double independent
Features of semiconductor devices: ultrafast switching
Case: SOT143
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
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SPW55N80C3FKSA1 Infineon-SPW55N80C3-DS-v02_00-en.pdf?fileId=db3a3043337a914d0133878821c910bb
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 34.7A; Idm: 150A; 500W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 34.7A
Pulsed drain current: 150A
Power dissipation: 500W
Case: PG-TO247
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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BAT60BE6359HTMA1 Infineon-BAT60BSERIES-DS-v01_01-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
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IPW60R099P6XKSA1 IPW60R099P6-DTE.pdf
IPW60R099P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 64 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+290.17 грн
10+223.92 грн
20+193.73 грн
30+179.47 грн
60+167.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R099CPFKSA1 IPW60R099CP.pdf
IPW60R099CPFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+468.74 грн
5+418.49 грн
В кошику  од. на суму  грн.
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