Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123028) > Сторінка 2012 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||||
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IRL3103STRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 64A Power dissipation: 110W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
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IRFH7084TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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IRFS3206TRRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 210A Power dissipation: 300W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||||||
| DZ1070N22K | INFINEON TECHNOLOGIES |
Category: Diode modulesDescription: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw Type of semiconductor module: diode Semiconductor structure: single diode Max. off-state voltage: 2.2kV Load current: 1.07kA Case: BG-PB70AT-1 Max. forward voltage: 0.75V Max. forward impulse current: 41kA Electrical mounting: screw Mechanical mounting: screw Max. load current: 1.1kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DZ1070N18K | INFINEON TECHNOLOGIES |
Category: Diode modulesDescription: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw Type of semiconductor module: diode Semiconductor structure: single diode Max. off-state voltage: 1.8kV Load current: 1.07kA Case: BG-PB70AT-1 Max. forward voltage: 0.75V Max. forward impulse current: 41kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DZ1070N28K | INFINEON TECHNOLOGIES |
Category: Diode modulesDescription: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw Type of semiconductor module: diode Semiconductor structure: single diode Max. off-state voltage: 2.8kV Load current: 1.07kA Case: BG-PB70AT-1 Max. forward voltage: 0.75V Max. forward impulse current: 41kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| DZ1070N26K | INFINEON TECHNOLOGIES |
Category: Diode modulesDescription: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw Type of semiconductor module: diode Semiconductor structure: single diode Max. off-state voltage: 2.6kV Load current: 1.07kA Case: BG-PB70AT-1 Max. forward voltage: 0.75V Max. forward impulse current: 41kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IRF2907ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 170A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 330W Technology: HEXFET® |
на замовлення 78 шт: термін постачання 14-30 дні (днів) |
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| IMBG65R260M1HXTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; N; 650V; 6A; 65W; D2PAK-7 Type of transistor: N-MOSFET Polarisation: N Drain-source voltage: 650V Drain current: 6A Power dissipation: 65W Case: D2PAK-7 Gate-source voltage: -5...23V On-state resistance: 0.26Ω Mounting: SMD Gate charge: 6nC Kind of channel: enhancement |
на замовлення 4000 шт: термін постачання 14-30 дні (днів) |
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FM25L16B-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 16kb FRAM Interface: SPI Memory organisation: 2kx8bit Supply voltage: 2.7...3.6V DC Clock frequency: 20MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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BSC160N10NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Power dissipation: 60W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||||
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SMBT3904SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363 Mounting: SMD Type of transistor: NPN Case: SOT363 Collector current: 0.2A Power dissipation: 0.25W Collector-emitter voltage: 40V Frequency: 300MHz Polarisation: bipolar |
на замовлення 63 шт: термін постачання 14-30 дні (днів) |
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CY8CMBR3102-SX1I | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuitsDescription: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; SO8 Case: SO8 Mounting: SMD Interface: GPIO; I2C Supply voltage: 1.71...5.5V DC Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C Integrated circuit features: watchdog |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| CY8CMBR3108-LQXI | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuitsDescription: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16 Case: QFN16 Mounting: SMD Interface: GPIO; I2C Supply voltage: 1.71...5.5V DC Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 4900 шт В кошику од. на суму грн. | |||||||||||||||||||
| CY8CMBR3108-LQXIT | INFINEON TECHNOLOGIES |
Category: Interfaces others - integrated circuitsDescription: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16 Case: QFN16 Mounting: SMD Interface: GPIO; I2C Supply voltage: 1.71...5.5V DC Type of integrated circuit: PSoC microcontroller Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||||
| CY8CMBR3106S-LQXI | INFINEON TECHNOLOGIES |
Category: Drivers - integrated circuitsDescription: CY8CMBR3106S-LQXI |
на замовлення 2450 шт: термін постачання 14-30 дні (днів) |
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IRFR3410TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
| IRFR3410TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 31A Case: DPAK Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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ICE2QS02GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS Type of integrated circuit: PMIC Kind of integrated circuit: PWM controller Frequency: 20...150kHz Number of channels: 1 Case: PG-DSO-8 Mounting: SMD Operating temperature: -25...125°C Topology: flyback Input voltage: 80...265V Application: SMPS Operating voltage: 11...25V DC |
на замовлення 1794 шт: термін постачання 14-30 дні (днів) |
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IRLMS5703TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.3A Power dissipation: 1.7W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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IRLMS1503TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.2A Power dissipation: 1.7W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BC850BE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 7507 шт: термін постачання 14-30 дні (днів) |
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BC850CE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 248 шт: термін постачання 14-30 дні (днів) |
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| BC850BWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar Type of transistor: NPN Polarisation: bipolar Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||||
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BC850CWH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT323 Current gain: 420 Mounting: SMD Frequency: 250MHz Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||||
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PVT412LSPBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 200mA On-state resistance: 35Ω Mounting: SMT Case: DIP6 Operating temperature: -40...85°C Manufacturer series: PVT412PbF Relay variant: MOSFET Control current: 3...25mA Operate time: 2ms Switched voltage: 0...400V AC; 0...400V DC Release time: 0.5ms |
на замовлення 123 шт: термін постачання 14-30 дні (днів) |
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PVT412APBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PV; 6Ω; THT; DIP6 Type of relay: solid state Contacts configuration: SPST-NO Control voltage: 1.2V DC Control current max.: 25mA On-state resistance: 6Ω Mounting: THT Case: DIP6 Body dimensions: 8.63x6.47x3.42mm Leads: for PCB Insulation voltage: 4kV Kind of output: MOSFET Operating temperature: -40...85°C Manufacturer series: PV |
на замовлення 3859 шт: термін постачання 14-30 дні (днів) |
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PVT322PBF | INFINEON TECHNOLOGIES |
Category: One Phase Solid State RelaysDescription: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA Type of relay: solid state On-state resistance: 10Ω Mounting: THT Manufacturer series: PVT322PbF Relay variant: MOSFET Control voltage: 1.2V DC Operating temperature: -40...85°C Contacts configuration: DPST-NO Control current: 2...25mA Operate time: 3ms Switched voltage: 0...250V AC; 0...250V DC Case: DIP8 Release time: 0.5ms Max. operating current: 0.5A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRFI540NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Polarisation: unipolar Drain-source voltage: 100V Drain current: 18A Gate charge: 62.7nC On-state resistance: 52mΩ Gate-source voltage: ±20V Power dissipation: 42W Technology: HEXFET® Case: TO220FP Kind of channel: enhancement |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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S29AL008J70TFI020 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel Mounting: SMD Type of integrated circuit: FLASH memory Operating temperature: -40...85°C Memory: 8Mb FLASH Kind of interface: parallel Case: TSSOP48 Interface: CFI; parallel Operating voltage: 2.7...3.6V Kind of memory: NOR |
на замовлення 514 шт: термін постачання 14-30 дні (днів) |
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| XMC DIGITAL POWER EXPLORER KIT | INFINEON TECHNOLOGIES |
Category: Development kits - others Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1 Type of development kit: ARM Infineon Family: XMC1300; XMC4200 Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller Components: BSC0924ND; IRS2011S; XMC1300; XMC4200 Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2 Connection: pin strips; USB B micro Number of add-on connectors: 1 Kind of architecture: Cortex M4; Cortex M0 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CY3210-MINIPROG1 | INFINEON TECHNOLOGIES |
Category: Development kits - othersDescription: Dev.kit: Cypress; Software: included Kit contents: board with DIP 28 socket; CY8C29466-24PXI microcontroller; USB cable; USB programmer Type of development kit: Cypress Software: included Programmers and development kits features: ISP programmer Associated circuits: PSoC Interface: USB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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XC822MT1FRIAAFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: microcontroller 8051; Interface: I2C,SPI,UART; DALI; -40÷85°C Interface: I2C; SPI; UART Communictions protocol: DALI Type of integrated circuit: microcontroller 8051 Case: PG-TSSOP-16 Mounting: SMD Operating temperature: -40...85°C Number of 10bit A/D converters: 4 Number of 16bit timers: 3 Number of PWM channels: 1 Number of input capture channels: 1 Number of output compare channels: 1 Supply voltage: 2.5...5.5V DC Memory: 500B SRAM; 4kB FLASH Kind of core: 8-bit Clock frequency: 24MHz Integrated circuit features: LEDTSCU; MDU; RTC; watchdog |
на замовлення 167 шт: термін постачання 14-30 дні (днів) |
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CY8C5267AXI-LP051 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 67MHz; TQFP100; 32kBSRAM,128kBFLASH Mounting: SMD Interface: GPIO; I2C; SPI; UART; USB Type of integrated circuit: PSoC microcontroller Case: TQFP100 Integrated circuit features: watchdog Operating temperature: -40...85°C Supply voltage: 1.71...5.5V DC Number of inputs/outputs: 72 Memory: 32kB SRAM; 128kB FLASH Clock frequency: 67MHz Kind of core: 32-bit |
на замовлення 90 шт: термін постачання 14-30 дні (днів) |
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IRF7343TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 55/-55V Drain current: 4.7/-3.4A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 50/105mΩ Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
на замовлення 5583 шт: термін постачання 14-30 дні (днів) |
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IRS20957STRPBF | INFINEON TECHNOLOGIES |
Category: RTV - audio integrated circuitsDescription: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16 Type of integrated circuit: audio amplifier Mounting: SMD Supply voltage: 10...15V DC Number of channels: 1 Amplifier class: D Case: SO16 Kind of package: reel; tape |
на замовлення 606 шт: термін постачання 14-30 дні (днів) |
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IRF7316TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.9A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
на замовлення 1597 шт: термін постачання 14-30 дні (днів) |
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BSS83PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -330mA Power dissipation: 0.36W Case: PG-SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement |
на замовлення 9925 шт: термін постачання 14-30 дні (днів) |
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IRL6372TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8 Case: SO8 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Technology: HEXFET® Features of semiconductor devices: logic level Type of transistor: N-MOSFET x2 Drain-source voltage: 30V Drain current: 8.1A On-state resistance: 17.9mΩ Power dissipation: 2.5W Gate-source voltage: ±12V Polarisation: unipolar |
на замовлення 828 шт: термін постачання 14-30 дні (днів) |
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CY7C1021DV33-10ZSXI | INFINEON TECHNOLOGIES |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating voltage: 3...3.6V |
на замовлення 1056 шт: термін постачання 14-30 дні (днів) |
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IR2127SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1 Type of integrated circuit: driver Mounting: SMD Supply voltage: 10...20V DC Output current: -420...200mA Operating temperature: -40...125°C Voltage class: 600V Turn-on time: 0.2µs Power: 625mW Kind of package: tube Case: SO8 Turn-off time: 150ns Kind of integrated circuit: gate driver; high-side Number of channels: 1 |
на замовлення 165 шт: термін постачання 14-30 дні (днів) |
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IR2127PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V Type of integrated circuit: driver Mounting: THT Supply voltage: 12...20V DC Output current: -420...200mA Operating temperature: -40...125°C Voltage class: 600V Turn-on time: 0.2µs Power: 1W Kind of package: tube Case: DIP8 Turn-off time: 150ns Kind of integrated circuit: gate driver; high-side Number of channels: 1 |
на замовлення 50 шт: термін постачання 14-30 дні (днів) |
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IR21271SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1 Type of integrated circuit: driver Mounting: SMD Supply voltage: 9...20V DC Output current: -420...200mA Operating temperature: -40...125°C Voltage class: 600V Turn-on time: 150ns Power: 625mW Kind of package: tube Case: SO8 Turn-off time: 150ns Kind of integrated circuit: gate driver; high-side Number of channels: 1 |
на замовлення 64 шт: термін постачання 14-30 дні (днів) |
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IR21271PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V Type of integrated circuit: driver Mounting: THT Supply voltage: 9...20V DC Output current: -420...200mA Operating temperature: -40...125°C Voltage class: 600V Turn-on time: 150ns Power: 1W Kind of package: tube Case: DIP8 Turn-off time: 150ns Kind of integrated circuit: gate driver; high-side Number of channels: 1 |
на замовлення 32 шт: термін постачання 14-30 дні (днів) |
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IRLR8726TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 61A Pulsed drain current: 340A Power dissipation: 75W Case: DPAK Gate-source voltage: ±20V On-state resistance: 5.8mΩ Mounting: SMD Kind of channel: enhancement |
на замовлення 573 шт: термін постачання 14-30 дні (днів) |
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IR2128SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1 Type of integrated circuit: driver Mounting: SMD Supply voltage: 12...20V DC Output current: -420...200mA Operating temperature: -40...125°C Voltage class: 600V Turn-on time: 0.2µs Power: 625mW Kind of package: tube Case: SO8 Turn-off time: 150ns Kind of integrated circuit: gate driver; high-side Number of channels: 1 |
на замовлення 79 шт: термін постачання 14-30 дні (днів) |
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IRFR2905ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK Polarisation: unipolar Kind of package: reel Case: DPAK Kind of channel: enhancement Mounting: SMD Technology: HEXFET® Type of transistor: N-MOSFET Drain-source voltage: 55V Pulsed drain current: 240A Drain current: 42A Gate charge: 44nC On-state resistance: 14.5mΩ Power dissipation: 110W Gate-source voltage: ±20V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||||
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IRFB4127PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 76A Power dissipation: 375W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: enhancement |
на замовлення 999 шт: термін постачання 14-30 дні (днів) |
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IRF7324TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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BAV199E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.25A Reverse recovery time: 1.5µs Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Power dissipation: 0.33W Kind of package: reel; tape Features of semiconductor devices: fast switching |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| BAV199E6433HTMA1 | INFINEON TECHNOLOGIES |
Category: SMD universal diodesDescription: Diode: switching; SMD; 85V; 0.2A; 1.5us; Ufmax: 1.25V; Ifsm: 4.5A Type of diode: switching Mounting: SMD Max. off-state voltage: 85V Load current: 0.2A Reverse recovery time: 1.5µs Semiconductor structure: double Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Leakage current: 5nA Power dissipation: 0.33W Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. | |||||||||||||||||||
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FM24CL04B-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 4b FRAM Interface: I2C Memory organisation: 512x8bit Supply voltage: 2.7...3.65V DC Clock frequency: 1MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||||
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BFP760H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343 Mounting: SMD Kind of transistor: HBT; RF Case: SOT343 Type of transistor: NPN Technology: SiGe:C Kind of package: reel; tape Collector current: 70mA Power dissipation: 0.24W Collector-emitter voltage: 13V Frequency: 45GHz Current gain: 160...400 Polarisation: bipolar |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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IRFB4227PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB Kind of channel: enhancement Mounting: THT Technology: HEXFET® Type of transistor: N-MOSFET Kind of package: tube Gate charge: 70nC On-state resistance: 26mΩ Gate-source voltage: ±30V Drain current: 65A Power dissipation: 190W Drain-source voltage: 200V Case: TO220AB Polarisation: unipolar |
на замовлення 817 шт: термін постачання 14-30 дні (днів) |
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IRFB4227PBFXKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 188 шт: термін постачання 14-30 дні (днів) |
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IRF7424TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -11A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||||
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ICE2HS01GXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - PWM circuitsDescription: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20 Mounting: SMD Case: PG-DSO-20 Type of integrated circuit: PMIC Topology: push-pull Kind of integrated circuit: resonant mode controller Application: SMPS Operating temperature: -25...125°C Output current: 6mA Operating voltage: 11...18V DC Frequency: 30kHz...1MHz |
на замовлення 999 шт: термін постачання 14-30 дні (днів) |
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SPP11N80C3 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 11A Power dissipation: 156W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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IRFP3006PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Power dissipation: 375W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: THT Gate charge: 200nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTS50085-1TMA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 38A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: PG-TO220-7-4 On-state resistance: 7.2mΩ Supply voltage: 5...58V DC Technology: High Current PROFET |
на замовлення 39 шт: термін постачання 14-30 дні (днів) |
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| IRL3103STRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 64A
Power dissipation: 110W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IRFH7084TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; PQFN5X6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Case: PQFN5X6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| IRFS3206TRRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; 300W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Power dissipation: 300W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| DZ1070N22K |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.2kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 1.1kA
Category: Diode modules
Description: Module: diode; single diode; 2.2kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.2kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Max. load current: 1.1kA
товару немає в наявності
В кошику
од. на суму грн.
| DZ1070N18K |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.8kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 1.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 1.8kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| DZ1070N28K |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.8kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 2.8kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.8kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| DZ1070N26K |
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Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.6kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; single diode; 2.6kV; If: 1.07kA; BG-PB70AT-1; screw
Type of semiconductor module: diode
Semiconductor structure: single diode
Max. off-state voltage: 2.6kV
Load current: 1.07kA
Case: BG-PB70AT-1
Max. forward voltage: 0.75V
Max. forward impulse current: 41kA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| IRF2907ZPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 170A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 170A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 330W
Technology: HEXFET®
на замовлення 78 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 279.48 грн |
| 10+ | 194.01 грн |
| 25+ | 144.27 грн |
| 50+ | 129.34 грн |
| IMBG65R260M1HXTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 6A; 65W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 65W
Case: D2PAK-7
Gate-source voltage: -5...23V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 650V; 6A; 65W; D2PAK-7
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 650V
Drain current: 6A
Power dissipation: 65W
Case: D2PAK-7
Gate-source voltage: -5...23V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
на замовлення 4000 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 162.51 грн |
| FM25L16B-GTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 16kbFRAM; SPI; 2kx8bit; 2.7÷3.6VDC; 20MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 16kb FRAM
Interface: SPI
Memory organisation: 2kx8bit
Supply voltage: 2.7...3.6V DC
Clock frequency: 20MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BSC160N10NS3GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 60W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 60W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| SMBT3904SH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Mounting: SMD
Type of transistor: NPN
Case: SOT363
Collector current: 0.2A
Power dissipation: 0.25W
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 0.2A; 0.25W; SOT363
Mounting: SMD
Type of transistor: NPN
Case: SOT363
Collector current: 0.2A
Power dissipation: 0.25W
Collector-emitter voltage: 40V
Frequency: 300MHz
Polarisation: bipolar
на замовлення 63 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 7.14 грн |
| CY8CMBR3102-SX1I |
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Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; SO8
Case: SO8
Mounting: SMD
Interface: GPIO; I2C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; SO8
Case: SO8
Mounting: SMD
Interface: GPIO; I2C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Integrated circuit features: watchdog
товару немає в наявності
В кошику
од. на суму грн.
| CY8CMBR3108-LQXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Interface: GPIO; I2C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Interface: GPIO; I2C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 4900 шт
В кошику
од. на суму грн.
| CY8CMBR3108-LQXIT |
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Виробник: INFINEON TECHNOLOGIES
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Interface: GPIO; I2C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
Category: Interfaces others - integrated circuits
Description: IC: PSoC microcontroller; 1.71÷5.5VDC; GPIO,I2C; SMD; QFN16
Case: QFN16
Mounting: SMD
Interface: GPIO; I2C
Supply voltage: 1.71...5.5V DC
Type of integrated circuit: PSoC microcontroller
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CY8CMBR3106S-LQXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Drivers - integrated circuits
Description: CY8CMBR3106S-LQXI
Category: Drivers - integrated circuits
Description: CY8CMBR3106S-LQXI
на замовлення 2450 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 490+ | 75.00 грн |
| IRFR3410TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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Мінімальне замовлення: 2000 шт
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| IRFR3410TRLPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| ICE2QS02GXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 20÷150kHz; Ch: 1; PG-DSO-8; flyback; SMPS
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Frequency: 20...150kHz
Number of channels: 1
Case: PG-DSO-8
Mounting: SMD
Operating temperature: -25...125°C
Topology: flyback
Input voltage: 80...265V
Application: SMPS
Operating voltage: 11...25V DC
на замовлення 1794 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 87.50 грн |
| 7+ | 67.99 грн |
| 10+ | 62.18 грн |
| 25+ | 54.72 грн |
| 50+ | 53.89 грн |
| IRLMS5703TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.3A; 1.7W; TSOP6
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.3A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| IRLMS1503TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; 1.7W; TSOP6
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.2A
Power dissipation: 1.7W
Case: TSOP6
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BC850BE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 7507 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.50 грн |
| 51+ | 8.21 грн |
| 100+ | 5.41 грн |
| 250+ | 4.59 грн |
| 1000+ | 3.65 грн |
| 3000+ | 3.11 грн |
| BC850CE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 248 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 39+ | 11.61 грн |
| 47+ | 8.87 грн |
| 59+ | 7.13 грн |
| 100+ | 6.23 грн |
| BC850BWH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar
Type of transistor: NPN
Polarisation: bipolar
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BC850CWH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 100mA; 250mW; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Current gain: 420
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PVT412LSPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 200mA
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Manufacturer series: PVT412PbF
Relay variant: MOSFET
Control current: 3...25mA
Operate time: 2ms
Switched voltage: 0...400V AC; 0...400V DC
Release time: 0.5ms
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 3÷25mA; 200mA; 0÷400VAC; 35Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 200mA
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Operating temperature: -40...85°C
Manufacturer series: PVT412PbF
Relay variant: MOSFET
Control current: 3...25mA
Operate time: 2ms
Switched voltage: 0...400V AC; 0...400V DC
Release time: 0.5ms
на замовлення 123 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 404.48 грн |
| 5+ | 294.34 грн |
| 10+ | 290.19 грн |
| PVT412APBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PV; 6Ω; THT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
On-state resistance: 6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Manufacturer series: PV
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PV; 6Ω; THT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
On-state resistance: 6Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.63x6.47x3.42mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Operating temperature: -40...85°C
Manufacturer series: PV
на замовлення 3859 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 394.66 грн |
| 100+ | 329.99 грн |
| PVT322PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA
Type of relay: solid state
On-state resistance: 10Ω
Mounting: THT
Manufacturer series: PVT322PbF
Relay variant: MOSFET
Control voltage: 1.2V DC
Operating temperature: -40...85°C
Contacts configuration: DPST-NO
Control current: 2...25mA
Operate time: 3ms
Switched voltage: 0...250V AC; 0...250V DC
Case: DIP8
Release time: 0.5ms
Max. operating current: 0.5A
Category: One Phase Solid State Relays
Description: Relay: solid state; DPST-NO; Ucntrl: 1.2VDC; Icntrl: 2÷25mA; 500mA
Type of relay: solid state
On-state resistance: 10Ω
Mounting: THT
Manufacturer series: PVT322PbF
Relay variant: MOSFET
Control voltage: 1.2V DC
Operating temperature: -40...85°C
Contacts configuration: DPST-NO
Control current: 2...25mA
Operate time: 3ms
Switched voltage: 0...250V AC; 0...250V DC
Case: DIP8
Release time: 0.5ms
Max. operating current: 0.5A
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| IRFI540NPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Gate charge: 62.7nC
On-state resistance: 52mΩ
Gate-source voltage: ±20V
Power dissipation: 42W
Technology: HEXFET®
Case: TO220FP
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18A
Gate charge: 62.7nC
On-state resistance: 52mΩ
Gate-source voltage: ±20V
Power dissipation: 42W
Technology: HEXFET®
Case: TO220FP
Kind of channel: enhancement
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 122.33 грн |
| 10+ | 67.99 грн |
| S29AL008J70TFI020 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 8Mb FLASH
Kind of interface: parallel
Case: TSSOP48
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 8Mb FLASH
Kind of interface: parallel
Case: TSSOP48
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
на замовлення 514 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 217.87 грн |
| XMC DIGITAL POWER EXPLORER KIT |
Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Connection: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
Category: Development kits - others
Description: Dev.kit: ARM Infineon; XMC1300,XMC4200; Add-on connectors: 1
Type of development kit: ARM Infineon
Family: XMC1300; XMC4200
Kit contents: base board with buck converter; board with XMC1300 microcontroller; board with XMC4200 microcontroller
Components: BSC0924ND; IRS2011S; XMC1300; XMC4200
Interface: CAN x2; Ethernet; GPIO; I2C; I2S; LIN; PWM; SPI; UART; USB; USIC x2
Connection: pin strips; USB B micro
Number of add-on connectors: 1
Kind of architecture: Cortex M4; Cortex M0
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| CY3210-MINIPROG1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Development kits - others
Description: Dev.kit: Cypress; Software: included
Kit contents: board with DIP 28 socket; CY8C29466-24PXI microcontroller; USB cable; USB programmer
Type of development kit: Cypress
Software: included
Programmers and development kits features: ISP programmer
Associated circuits: PSoC
Interface: USB
Category: Development kits - others
Description: Dev.kit: Cypress; Software: included
Kit contents: board with DIP 28 socket; CY8C29466-24PXI microcontroller; USB cable; USB programmer
Type of development kit: Cypress
Software: included
Programmers and development kits features: ISP programmer
Associated circuits: PSoC
Interface: USB
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| XC822MT1FRIAAFXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: I2C,SPI,UART; DALI; -40÷85°C
Interface: I2C; SPI; UART
Communictions protocol: DALI
Type of integrated circuit: microcontroller 8051
Case: PG-TSSOP-16
Mounting: SMD
Operating temperature: -40...85°C
Number of 10bit A/D converters: 4
Number of 16bit timers: 3
Number of PWM channels: 1
Number of input capture channels: 1
Number of output compare channels: 1
Supply voltage: 2.5...5.5V DC
Memory: 500B SRAM; 4kB FLASH
Kind of core: 8-bit
Clock frequency: 24MHz
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: I2C,SPI,UART; DALI; -40÷85°C
Interface: I2C; SPI; UART
Communictions protocol: DALI
Type of integrated circuit: microcontroller 8051
Case: PG-TSSOP-16
Mounting: SMD
Operating temperature: -40...85°C
Number of 10bit A/D converters: 4
Number of 16bit timers: 3
Number of PWM channels: 1
Number of input capture channels: 1
Number of output compare channels: 1
Supply voltage: 2.5...5.5V DC
Memory: 500B SRAM; 4kB FLASH
Kind of core: 8-bit
Clock frequency: 24MHz
Integrated circuit features: LEDTSCU; MDU; RTC; watchdog
на замовлення 167 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 91.97 грн |
| 6+ | 81.25 грн |
| 25+ | 76.28 грн |
| 100+ | 68.82 грн |
| CY8C5267AXI-LP051 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 32kBSRAM,128kBFLASH
Mounting: SMD
Interface: GPIO; I2C; SPI; UART; USB
Type of integrated circuit: PSoC microcontroller
Case: TQFP100
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 72
Memory: 32kB SRAM; 128kB FLASH
Clock frequency: 67MHz
Kind of core: 32-bit
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 67MHz; TQFP100; 32kBSRAM,128kBFLASH
Mounting: SMD
Interface: GPIO; I2C; SPI; UART; USB
Type of integrated circuit: PSoC microcontroller
Case: TQFP100
Integrated circuit features: watchdog
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 72
Memory: 32kB SRAM; 128kB FLASH
Clock frequency: 67MHz
Kind of core: 32-bit
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 895.58 грн |
| 10+ | 827.46 грн |
| IRF7343TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 50/105mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 5583 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 108.04 грн |
| 10+ | 65.42 грн |
| 100+ | 43.03 грн |
| 250+ | 37.23 грн |
| 500+ | 33.75 грн |
| 1000+ | 30.76 грн |
| 2000+ | 28.27 грн |
| 4000+ | 26.28 грн |
| IRS20957STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 10÷15VDC; Ch: 1; Amp.class: D; SO16
Type of integrated circuit: audio amplifier
Mounting: SMD
Supply voltage: 10...15V DC
Number of channels: 1
Amplifier class: D
Case: SO16
Kind of package: reel; tape
на замовлення 606 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 180.37 грн |
| 10+ | 156.70 грн |
| IRF7316TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -4.9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 1597 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 106.25 грн |
| 10+ | 68.40 грн |
| 50+ | 47.84 грн |
| 100+ | 41.70 грн |
| 200+ | 36.90 грн |
| 250+ | 35.57 грн |
| 500+ | 32.34 грн |
| 1000+ | 29.77 грн |
| BSS83PH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -0.33A; 0.36W; PG-SOT23
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -330mA
Power dissipation: 0.36W
Case: PG-SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 9925 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 28.57 грн |
| 24+ | 17.91 грн |
| 50+ | 12.19 грн |
| 100+ | 10.32 грн |
| 500+ | 7.23 грн |
| 1000+ | 6.19 грн |
| 3000+ | 5.04 грн |
| 6000+ | 4.52 грн |
| 9000+ | 4.26 грн |
| IRL6372TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Drain-source voltage: 30V
Drain current: 8.1A
On-state resistance: 17.9mΩ
Power dissipation: 2.5W
Gate-source voltage: ±12V
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 8.1A; 2.5W; SO8
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: HEXFET®
Features of semiconductor devices: logic level
Type of transistor: N-MOSFET x2
Drain-source voltage: 30V
Drain current: 8.1A
On-state resistance: 17.9mΩ
Power dissipation: 2.5W
Gate-source voltage: ±12V
Polarisation: unipolar
на замовлення 828 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 44.64 грн |
| 12+ | 37.14 грн |
| 13+ | 33.33 грн |
| 25+ | 26.95 грн |
| 50+ | 23.88 грн |
| CY7C1021DV33-10ZSXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 3÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3...3.6V
на замовлення 1056 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 133.04 грн |
| IR2127SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 0.2µs
Power: 625mW
Kind of package: tube
Case: SO8
Turn-off time: 150ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 10...20V DC
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 0.2µs
Power: 625mW
Kind of package: tube
Case: SO8
Turn-off time: 150ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
на замовлення 165 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 164.29 грн |
| 5+ | 117.73 грн |
| 10+ | 111.10 грн |
| 25+ | 103.64 грн |
| 50+ | 97.84 грн |
| 95+ | 93.69 грн |
| IR2127PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Mounting: THT
Supply voltage: 12...20V DC
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 0.2µs
Power: 1W
Kind of package: tube
Case: DIP8
Turn-off time: 150ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Mounting: THT
Supply voltage: 12...20V DC
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 0.2µs
Power: 1W
Kind of package: tube
Case: DIP8
Turn-off time: 150ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
на замовлення 50 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 168.31 грн |
| 10+ | 145.92 грн |
| 25+ | 136.80 грн |
| IR21271SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 9...20V DC
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 150ns
Power: 625mW
Kind of package: tube
Case: SO8
Turn-off time: 150ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 9...20V DC
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 150ns
Power: 625mW
Kind of package: tube
Case: SO8
Turn-off time: 150ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
на замовлення 64 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 129.47 грн |
| 10+ | 112.76 грн |
| IR21271PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Mounting: THT
Supply voltage: 9...20V DC
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 150ns
Power: 1W
Kind of package: tube
Case: DIP8
Turn-off time: 150ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; DIP8; -420÷200mA; 1W; Ch: 1; 600V
Type of integrated circuit: driver
Mounting: THT
Supply voltage: 9...20V DC
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 150ns
Power: 1W
Kind of package: tube
Case: DIP8
Turn-off time: 150ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 222.33 грн |
| 5+ | 182.41 грн |
| 10+ | 166.65 грн |
| 25+ | 145.92 грн |
| IRLR8726TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 340A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 340A; 75W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 340A
Power dissipation: 75W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 5.8mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 573 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.79 грн |
| 12+ | 35.74 грн |
| 100+ | 22.30 грн |
| 250+ | 19.15 грн |
| 500+ | 17.08 грн |
| IR2128SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 12...20V DC
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 0.2µs
Power: 625mW
Kind of package: tube
Case: SO8
Turn-off time: 150ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; SO8; -420÷200mA; 625mW; Ch: 1
Type of integrated circuit: driver
Mounting: SMD
Supply voltage: 12...20V DC
Output current: -420...200mA
Operating temperature: -40...125°C
Voltage class: 600V
Turn-on time: 0.2µs
Power: 625mW
Kind of package: tube
Case: SO8
Turn-off time: 150ns
Kind of integrated circuit: gate driver; high-side
Number of channels: 1
на замовлення 79 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 164.29 грн |
| 4+ | 129.34 грн |
| 10+ | 120.22 грн |
| IRFR2905ZTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Polarisation: unipolar
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Pulsed drain current: 240A
Drain current: 42A
Gate charge: 44nC
On-state resistance: 14.5mΩ
Power dissipation: 110W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 42A; Idm: 240A; 110W; DPAK
Polarisation: unipolar
Kind of package: reel
Case: DPAK
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Pulsed drain current: 240A
Drain current: 42A
Gate charge: 44nC
On-state resistance: 14.5mΩ
Power dissipation: 110W
Gate-source voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IRFB4127PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 76A; 375W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 76A
Power dissipation: 375W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 999 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 127.68 грн |
| 10+ | 100.32 грн |
| 20+ | 91.20 грн |
| 50+ | 78.77 грн |
| IRF7324TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -9A; 2W; SO8
Type of transistor: P-MOSFET x2
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| BAV199E6327HTSA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 1.5µs
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.25A; 1.5us; SOT23; Ufmax: 1.25V; 330mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.25A
Reverse recovery time: 1.5µs
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Power dissipation: 0.33W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
товару немає в наявності
В кошику
од. на суму грн.
| BAV199E6433HTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 1.5us; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: double
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 5nA
Power dissipation: 0.33W
Application: automotive industry
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 0.2A; 1.5us; Ufmax: 1.25V; Ifsm: 4.5A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 1.5µs
Semiconductor structure: double
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 5nA
Power dissipation: 0.33W
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| FM24CL04B-GTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4b FRAM
Interface: I2C
Memory organisation: 512x8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 4bFRAM; I2C; 512x8bit; 2.7÷3.65VDC; 1MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 4b FRAM
Interface: I2C
Memory organisation: 512x8bit
Supply voltage: 2.7...3.65V DC
Clock frequency: 1MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BFP760H6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Mounting: SMD
Kind of transistor: HBT; RF
Case: SOT343
Type of transistor: NPN
Technology: SiGe:C
Kind of package: reel; tape
Collector current: 70mA
Power dissipation: 0.24W
Collector-emitter voltage: 13V
Frequency: 45GHz
Current gain: 160...400
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Mounting: SMD
Kind of transistor: HBT; RF
Case: SOT343
Type of transistor: NPN
Technology: SiGe:C
Kind of package: reel; tape
Collector current: 70mA
Power dissipation: 0.24W
Collector-emitter voltage: 13V
Frequency: 45GHz
Current gain: 160...400
Polarisation: bipolar
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 111.61 грн |
| IRFB4227PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 70nC
On-state resistance: 26mΩ
Gate-source voltage: ±30V
Drain current: 65A
Power dissipation: 190W
Drain-source voltage: 200V
Case: TO220AB
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; 190W; TO220AB
Kind of channel: enhancement
Mounting: THT
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 70nC
On-state resistance: 26mΩ
Gate-source voltage: ±30V
Drain current: 65A
Power dissipation: 190W
Drain-source voltage: 200V
Case: TO220AB
Polarisation: unipolar
на замовлення 817 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 131.26 грн |
| 10+ | 111.10 грн |
| 25+ | 100.32 грн |
| 50+ | 87.89 грн |
| 100+ | 76.28 грн |
| 250+ | 63.84 грн |
| 500+ | 58.87 грн |
| IRFB4227PBFXKMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 65A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 65A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 188 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 175.01 грн |
| 10+ | 101.98 грн |
| 25+ | 88.72 грн |
| 50+ | 80.42 грн |
| 100+ | 72.96 грн |
| IRF7424TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| ICE2HS01GXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: PMIC
Topology: push-pull
Kind of integrated circuit: resonant mode controller
Application: SMPS
Operating temperature: -25...125°C
Output current: 6mA
Operating voltage: 11...18V DC
Frequency: 30kHz...1MHz
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; resonant mode controller; 6mA; 0.03÷1MHz; PG-DSO-20
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: PMIC
Topology: push-pull
Kind of integrated circuit: resonant mode controller
Application: SMPS
Operating temperature: -25...125°C
Output current: 6mA
Operating voltage: 11...18V DC
Frequency: 30kHz...1MHz
на замовлення 999 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 171.44 грн |
| 10+ | 138.46 грн |
| SPP11N80C3 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 156W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 156W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.45Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 172.33 грн |
| 10+ | 118.56 грн |
| IRFP3006PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; 375W; TO247AC
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Power dissipation: 375W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BTS50085-1TMA |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; SMD
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: PG-TO220-7-4
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
на замовлення 39 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 566.10 грн |
| 10+ | 476.74 грн |
| 25+ | 441.09 грн |































