Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (121550) > Сторінка 2012 з 2026

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IPD65R600E6ATMA1 IPD65R600E6ATMA1 INFINEON TECHNOLOGIES IPD65R600E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
On-state resistance: 0.6Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPD65R600E6BTMA1 IPD65R600E6BTMA1 INFINEON TECHNOLOGIES IPD65R600E6-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
On-state resistance: 0.6Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPD65R660CFDATMA1 IPD65R660CFDATMA1 INFINEON TECHNOLOGIES IPD65R660CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 0.66Ω
Gate-source voltage: ±20V
Power dissipation: 62.5W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPD65R660CFDBTMA1 IPD65R660CFDBTMA1 INFINEON TECHNOLOGIES IPD65R660CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 0.66Ω
Gate-source voltage: ±20V
Power dissipation: 62.5W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPD65R950CFDATMA1 IPD65R950CFDATMA1 INFINEON TECHNOLOGIES IPD65R950CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
Power dissipation: 36.7W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPD65R950CFDBTMA1 IPD65R950CFDBTMA1 INFINEON TECHNOLOGIES IPD65R950CFD-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
Power dissipation: 36.7W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPP60R120P7 IPP60R120P7 INFINEON TECHNOLOGIES IPP60R120P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
On-state resistance: 0.12Ω
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™ P7
Kind of package: tube
Gate-source voltage: ±20V
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IPB60R120P7ATMA1 IPB60R120P7ATMA1 INFINEON TECHNOLOGIES IPB60R120P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: D2PAK
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Technology: CoolMOS™ P7
Kind of package: reel
Gate-source voltage: ±20V
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XC886C6FFI5VACFXUMA1 XC886C6FFI5VACFXUMA1 INFINEON TECHNOLOGIES XC88X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
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XC8866FFI5VACFXUMA1 XC8866FFI5VACFXUMA1 INFINEON TECHNOLOGIES XC88X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
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XC8868FFI5VACFXUMA1 XC8868FFI5VACFXUMA1 INFINEON TECHNOLOGIES XC88X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
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XC886C6FFI3V3ACFXUMA1 XC886C6FFI3V3ACFXUMA1 INFINEON TECHNOLOGIES XC88X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
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XC886C8FFI5VACFXUMA1 XC886C8FFI5VACFXUMA1 INFINEON TECHNOLOGIES XC88X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
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XC886LM6FFI5VACFXUMA1 XC886LM6FFI5VACFXUMA1 INFINEON TECHNOLOGIES XC88X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
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XC886LM8FFI5VACFXUMA1 XC886LM8FFI5VACFXUMA1 INFINEON TECHNOLOGIES XC88X-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
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FF200R12KE3HOSA1 FF200R12KE3HOSA1 INFINEON TECHNOLOGIES FF200R12KE3.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
1+10664.52 грн
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FF200R17KE4HOSA1 FF200R17KE4HOSA1 INFINEON TECHNOLOGIES FF200R17KE4.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+14892.22 грн
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IPP90R340C3XKSA2 IPP90R340C3XKSA2 INFINEON TECHNOLOGIES Infineon-IPP90R340C3-DS-v01_01-en.pdf?fileId=db3a30432313ff5e0123a8a4f73e5c14 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: TO220-3
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 94nC
Kind of channel: enhancement
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
2+297.14 грн
10+248.24 грн
Мінімальне замовлення: 2
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IPB90R340C3ATMA2 INFINEON TECHNOLOGIES Infineon-IPB90R340C3-DS-v02_00-en.pdf?fileId=db3a304336c52a950136c5c59ef500ad Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: D2PAK; TO263
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 94nC
Kind of channel: enhancement
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BAT6302VH6327XTSA1 BAT6302VH6327XTSA1 INFINEON TECHNOLOGIES BAT6302VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
12+37.93 грн
16+27.68 грн
18+23.82 грн
Мінімальне замовлення: 12
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BSP171PL6327 BSP171PL6327 INFINEON TECHNOLOGIES BSP171PL6327-Infineon.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Power dissipation: 1.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
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BSZ105N04NSGATMA1 BSZ105N04NSGATMA1 INFINEON TECHNOLOGIES BSZ105N04NSG.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 29A
Power dissipation: 35W
Case: PG-TSDSON-8
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 3
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S25FL512SAGBHMC10 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S70FL01GSAGBHMC10 INFINEON TECHNOLOGIES Infineon-S70FL01GS_1_Gbit_(128_Mbyte)_3.0V_SPI_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edb3adf5e12&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_2_3_1 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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TD92N16KOFHPSA2 TD92N16KOFHPSA2 INFINEON TECHNOLOGIES TD92N16KOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 92A; BG-PB20-1; Ufmax: 1.62V; screw
Case: BG-PB20-1
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 120mA
Max. forward impulse current: 2.05kA
Max. forward voltage: 1.62V
Max. off-state voltage: 1.6kV
Load current: 92A
Max. load current: 160A
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
1+14387.35 грн
3+11397.24 грн
5+8981.94 грн
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BCR141E6327 BCR141E6327 INFINEON TECHNOLOGIES BCR141.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
на замовлення 126 шт:
термін постачання 14-30 дні (днів)
18+25.29 грн
25+17.11 грн
40+10.48 грн
100+8.89 грн
Мінімальне замовлення: 18
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IRGB4620DPBF IRGB4620DPBF INFINEON TECHNOLOGIES IRGB4620DPBF.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 140W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 140W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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IGCM04G60HAXKMA1 IGCM04G60HAXKMA1 INFINEON TECHNOLOGIES IGCM04G60HA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; ClPOS™ Mini,TRENCHSTOP™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -4...4A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 21.8W
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
1+602.41 грн
3+509.06 грн
5+474.68 грн
10+420.16 грн
14+398.36 грн
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CY7C1062G30-10BGXI INFINEON TECHNOLOGIES Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: PBGA119
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx32bit
Memory: 16Mb SRAM
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CY7C1062G30-10BGXIT INFINEON TECHNOLOGIES Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211 Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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IPW60R040C7XKSA1 IPW60R040C7XKSA1 INFINEON TECHNOLOGIES IPW60R040C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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TT400N26KOF TT400N26KOF INFINEON TECHNOLOGIES TT400N26KOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.6kV
Load current: 400A
Case: BG-PB60-1
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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S25FS256TDPBHI113 INFINEON TECHNOLOGIES Infineon-S25FS256T_256Mb_SEMPER_Nano_Flash_Quad_SPI_1-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c80027ecd0180740c5a46707a&da=t Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; QPI,Quad I/O,SPI; FBGA24
Type of integrated circuit: FLASH memory
Mounting: SMD
Case: FBGA24
Operating temperature: -40...85°C
Kind of memory: NOR
Interface: QPI; Quad I/O; SPI
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
2500+420.87 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRF1010NSTRLPBF IRF1010NSTRLPBF INFINEON TECHNOLOGIES irf1010nspbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Gate charge: 0.12µC
On-state resistance: 11mΩ
Power dissipation: 180W
Gate-source voltage: ±20V
на замовлення 349 шт:
термін постачання 14-30 дні (днів)
4+134.57 грн
10+81.10 грн
100+63.65 грн
200+59.96 грн
250+58.79 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
AUIRF1010ZSTRL AUIRF1010ZSTRL INFINEON TECHNOLOGIES auirf1010z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 94A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IDH20G120C5XKSA1 IDH20G120C5XKSA1 INFINEON TECHNOLOGIES IDH20G120C5-DTE.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; PG-TO220-2; 330W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 0.168kA
Leakage current: 8.5µA
Power dissipation: 330W
Kind of package: tube
на замовлення 486 шт:
термін постачання 14-30 дні (днів)
1+509.38 грн
В кошику  од. на суму  грн.
IDH20G65C6XKSA1 IDH20G65C6XKSA1 INFINEON TECHNOLOGIES IDH20G65C6.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 6G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Leakage current: 153µA
Power dissipation: 108W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
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IDH20G65C5 IDH20G65C5 INFINEON TECHNOLOGIES Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 157W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 119A
Leakage current: 4.1µA
Power dissipation: 157W
Kind of package: tube
Heatsink thickness: 1.17...137mm
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IRLHS6242TRPBF IRLHS6242TRPBF INFINEON TECHNOLOGIES irlhs6242pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 1.98W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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AUIRF7343QTR AUIRF7343QTR INFINEON TECHNOLOGIES auirf7343q.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 4.7W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 4.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43/95mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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DZ600N12K DZ600N12K INFINEON TECHNOLOGIES DZ600N18K.pdf Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Case: BG-PB501-1
Semiconductor structure: single diode
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.75V
Max. load current: 600A
Load current: 600A
Max. forward impulse current: 22kA
Max. off-state voltage: 1.2kV
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+24956.14 грн
В кошику  од. на суму  грн.
BAT60BE6327HTSA1 BAT60BE6327HTSA1 INFINEON TECHNOLOGIES BAT60BE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 5A
Power dissipation: 1.35W
на замовлення 305 шт:
термін постачання 14-30 дні (днів)
18+25.29 грн
26+16.61 грн
50+12.24 грн
100+10.90 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
CY7C1480BV33-167AXI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 167MHz
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
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CY7C1480BV33-200AXC INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 200MHz
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
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CY7C1480BV33-250BZI INFINEON TECHNOLOGIES download Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Case: FBGA165
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 250MHz
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
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AUIRGSL4062D1 AUIRGSL4062D1 INFINEON TECHNOLOGIES AUIRGx4062D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Turn-off time: 176ns
Type of transistor: IGBT
Power dissipation: 123W
Collector current: 39A
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Collector-emitter voltage: 600V
Technology: Trench
Gate charge: 77nC
Turn-on time: 35ns
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
2+234.82 грн
3+203.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRGSL4062DPBF IRGSL4062DPBF INFINEON TECHNOLOGIES irgs4062dpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Power dissipation: 250W
Collector current: 48A
Collector-emitter voltage: 600V
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IPD33CN10NGATMA1 INFINEON TECHNOLOGIES Infineon-IPP35CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42b457b44b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 108A
Power dissipation: 58W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhancement
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TLE42712AKSA1 TLE42712AKSA1 INFINEON TECHNOLOGIES TLE4271-2.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO220-7; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5V
Output current: 0.55A
Case: TO220-7
Mounting: THT
Kind of package: tube
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 6...40V
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TLE42712GATMA1 TLE42712GATMA1 INFINEON TECHNOLOGIES TLE4271-2G.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5V
Output current: 0.55A
Case: TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 6...40V
на замовлення 832 шт:
термін постачання 14-30 дні (днів)
3+177.02 грн
10+124.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
S26HL01GTFPBHB030 INFINEON TECHNOLOGIES Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: HyperBus
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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IRFL4105TRPBF IRFL4105TRPBF INFINEON TECHNOLOGIES irfl4105pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Case: SOT223
Polarisation: unipolar
Power dissipation: 2.1W
Drain current: 3.7A
Drain-source voltage: 55V
на замовлення 1815 шт:
термін постачання 14-30 дні (днів)
7+66.83 грн
11+39.50 грн
50+30.11 грн
100+27.00 грн
200+24.32 грн
500+22.56 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BBY5303WE6327HTSA1 BBY5303WE6327HTSA1 INFINEON TECHNOLOGIES Infineon-BBY53SERIES-DS-v01_01-en.pdf Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SOD323; single diode; reel,tape; Ir: 200nA
Mounting: SMD
Features of semiconductor devices: RF
Semiconductor structure: single diode
Type of diode: varicap
Capacitance: 1.85...5.8pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 6V
Kind of package: reel; tape
Case: SOD323
на замовлення 2250 шт:
термін постачання 14-30 дні (днів)
21+21.68 грн
27+15.93 грн
28+15.01 грн
100+12.33 грн
250+11.41 грн
500+10.73 грн
650+10.48 грн
1000+10.40 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
BB535E7904HTSA1 BB535E7904HTSA1 INFINEON TECHNOLOGIES BB535-DTE.pdf Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF
Mounting: SMD
Features of semiconductor devices: RF
Semiconductor structure: single diode
Type of diode: varicap
Capacitance: 2...20pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
Kind of package: reel; tape
Case: SOD323
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
3+150.83 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BBY5502VH6327XTSA1 BBY5502VH6327XTSA1 INFINEON TECHNOLOGIES BBY55_SER.pdf Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Case: SC79
Features of semiconductor devices: RF
Type of diode: varicap
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 5.5...19.6pF
Leakage current: 0.1µA
Kind of package: reel; tape
Load current: 20mA
Max. off-state voltage: 16V
на замовлення 1933 шт:
термін постачання 14-30 дні (днів)
23+19.87 грн
27+15.77 грн
28+15.18 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
DD340N16SHPSA1 INFINEON TECHNOLOGIES DD340N16S.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 330A; BG-PB50SB-1; screw
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Case: BG-PB50SB-1
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DD340N20SHPSA1 INFINEON TECHNOLOGIES DD340N20S.pdf Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2kV
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DD340N18S INFINEON TECHNOLOGIES DD340N18S.pdf Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10kA
Case: BG-PB50SB-1
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DD340N22SHPSA1 INFINEON TECHNOLOGIES DD340N22S.pdf Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 330A; BG-PB50SB-1; screw
Max. forward voltage: 1.31V
Case: BG-PB50SB-1
Mechanical mounting: screw
Load current: 330A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 10kA
Electrical mounting: screw
Semiconductor structure: double series
Type of semiconductor module: diode
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AIDW16S65C5XKSA1 INFINEON TECHNOLOGIES Infineon-AIDW16S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2d4eb5680 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 94W
Max. forward voltage: 1.7V
Load current: 16A
Power dissipation: 94W
Max. forward impulse current: 95A
Max. off-state voltage: 650V
Application: automotive industry
Technology: CoolSiC™ 5G; SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-3
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IPD65R600E6ATMA1 IPD65R600E6-DTE.pdf
IPD65R600E6ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
On-state resistance: 0.6Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPD65R600E6BTMA1 IPD65R600E6-DTE.pdf
IPD65R600E6BTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 63W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
On-state resistance: 0.6Ω
Gate-source voltage: ±20V
Power dissipation: 63W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPD65R660CFDATMA1 IPD65R660CFD-DTE.pdf
IPD65R660CFDATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 0.66Ω
Gate-source voltage: ±20V
Power dissipation: 62.5W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPD65R660CFDBTMA1 IPD65R660CFD-DTE.pdf
IPD65R660CFDBTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 62.5W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
On-state resistance: 0.66Ω
Gate-source voltage: ±20V
Power dissipation: 62.5W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPD65R950CFDATMA1 IPD65R950CFD-DTE.pdf
IPD65R950CFDATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
Power dissipation: 36.7W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPD65R950CFDBTMA1 IPD65R950CFD-DTE.pdf
IPD65R950CFDBTMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
On-state resistance: 0.95Ω
Gate-source voltage: ±20V
Power dissipation: 36.7W
Technology: CoolMOS™
Case: PG-TO252-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IPP60R120P7 IPP60R120P7.pdf
IPP60R120P7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: PG-TO220-3
On-state resistance: 0.12Ω
Mounting: THT
Kind of channel: enhancement
Technology: CoolMOS™ P7
Kind of package: tube
Gate-source voltage: ±20V
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IPB60R120P7ATMA1 IPB60R120P7.pdf
IPB60R120P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 95W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 95W
Case: D2PAK
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 36nC
Kind of channel: enhancement
Technology: CoolMOS™ P7
Kind of package: reel
Gate-source voltage: ±20V
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XC886C6FFI5VACFXUMA1 XC88X-DTE.pdf
XC886C6FFI5VACFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
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XC8866FFI5VACFXUMA1 XC88X-DTE.pdf
XC8866FFI5VACFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
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XC8868FFI5VACFXUMA1 XC88X-DTE.pdf
XC8868FFI5VACFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
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XC886C6FFI3V3ACFXUMA1 XC88X-DTE.pdf
XC886C6FFI3V3ACFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
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XC886C8FFI5VACFXUMA1 XC88X-DTE.pdf
XC886C8FFI5VACFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: CAN x2,SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: CAN x2; SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
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В кошику  од. на суму  грн.
XC886LM6FFI5VACFXUMA1 XC88X-DTE.pdf
XC886LM6FFI5VACFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 24kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
товару немає в наявності
В кошику  од. на суму  грн.
XC886LM8FFI5VACFXUMA1 XC88X-DTE.pdf
XC886LM8FFI5VACFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-TQFP-48
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
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FF200R12KE3HOSA1 FF200R12KE3.pdf
FF200R12KE3HOSA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.05kW
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+10664.52 грн
В кошику  од. на суму  грн.
FF200R17KE4HOSA1 FF200R17KE4.pdf
FF200R17KE4HOSA1
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 200A
Max. off-state voltage: 1.7kV
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Electrical mounting: screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 400A
Power dissipation: 1.25kW
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+14892.22 грн
В кошику  од. на суму  грн.
IPP90R340C3XKSA2 Infineon-IPP90R340C3-DS-v01_01-en.pdf?fileId=db3a30432313ff5e0123a8a4f73e5c14
IPP90R340C3XKSA2
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: TO220-3
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 94nC
Kind of channel: enhancement
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+297.14 грн
10+248.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB90R340C3ATMA2 Infineon-IPB90R340C3-DS-v02_00-en.pdf?fileId=db3a304336c52a950136c5c59ef500ad
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 15A; 208W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 15A
Power dissipation: 208W
Case: D2PAK; TO263
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 94nC
Kind of channel: enhancement
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BAT6302VH6327XTSA1 BAT6302VH6327XTSA1.pdf
BAT6302VH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 3V; 0.1A; 100mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.1W
на замовлення 19 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+37.93 грн
16+27.68 грн
18+23.82 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BSP171PL6327 BSP171PL6327-Infineon.pdf
BSP171PL6327
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.7A; 1.6W; SOT223
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.7A
Power dissipation: 1.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of channel: enhancement
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BSZ105N04NSGATMA1 BSZ105N04NSG.pdf
BSZ105N04NSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 29A
Power dissipation: 35W
Case: PG-TSDSON-8
On-state resistance: 10.5mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Technology: OptiMOS™ 3
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S25FL512SAGBHMC10
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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S70FL01GSAGBHMC10 Infineon-S70FL01GS_1_Gbit_(128_Mbyte)_3.0V_SPI_Flash-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edb3adf5e12&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files&redirId=File_2_3_1
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; CFI,SPI; 133MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: CFI; SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray
Application: automotive
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TD92N16KOFHPSA2 TD92N16KOF.pdf
TD92N16KOFHPSA2
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 92A; BG-PB20-1; Ufmax: 1.62V; screw
Case: BG-PB20-1
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 120mA
Max. forward impulse current: 2.05kA
Max. forward voltage: 1.62V
Max. off-state voltage: 1.6kV
Load current: 92A
Max. load current: 160A
на замовлення 14 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+14387.35 грн
3+11397.24 грн
5+8981.94 грн
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BCR141E6327 BCR141.pdf
BCR141E6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23; R1: 22kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23
Mounting: SMD
Frequency: 130MHz
Kind of transistor: BRT
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
на замовлення 126 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+25.29 грн
25+17.11 грн
40+10.48 грн
100+8.89 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
IRGB4620DPBF IRGB4620DPBF.pdf
IRGB4620DPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 20A; 140W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 20A
Power dissipation: 140W
Case: TO220AB
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
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IGCM04G60HAXKMA1 IGCM04G60HA.pdf
IGCM04G60HAXKMA1
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge; ClPOS™ Mini,TRENCHSTOP™
Type of integrated circuit: driver
Topology: IGBT three-phase bridge
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -4...4A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Kind of package: tube
Voltage class: 600V
Protection: anti-overload OPP; undervoltage UVP
Power dissipation: 21.8W
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+602.41 грн
3+509.06 грн
5+474.68 грн
10+420.16 грн
14+398.36 грн
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CY7C1062G30-10BGXI Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
Case: PBGA119
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 10ns
Supply voltage: 2.2...3.6V DC
Memory organisation: 512kx32bit
Memory: 16Mb SRAM
товару немає в наявності
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CY7C1062G30-10BGXIT Infineon-CY7C1062G_CY7C1062GE_16-Mbit_(512_K_words_32_bits)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3e12d3948&utm_source=cypress&utm_medium=referral&utm_campaign=20211
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 512kx32bit; 10ns; PBGA119; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 512kx32bit
Access time: 10ns
Case: PBGA119
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2.2...3.6V DC
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IPW60R040C7XKSA1 IPW60R040C7-DTE.pdf
IPW60R040C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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TT400N26KOF TT400N26KOF.pdf
TT400N26KOF
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.6kV; 400A; BG-PB60-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.6kV
Load current: 400A
Case: BG-PB60-1
Max. forward voltage: 1.88V
Max. forward impulse current: 13kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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S25FS256TDPBHI113 Infineon-S25FS256T_256Mb_SEMPER_Nano_Flash_Quad_SPI_1-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c80027ecd0180740c5a46707a&da=t
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; QPI,Quad I/O,SPI; FBGA24
Type of integrated circuit: FLASH memory
Mounting: SMD
Case: FBGA24
Operating temperature: -40...85°C
Kind of memory: NOR
Interface: QPI; Quad I/O; SPI
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2500+420.87 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IRF1010NSTRLPBF irf1010nspbf.pdf
IRF1010NSTRLPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK
Mounting: SMD
Case: D2PAK
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 60A
Gate charge: 0.12µC
On-state resistance: 11mΩ
Power dissipation: 180W
Gate-source voltage: ±20V
на замовлення 349 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+134.57 грн
10+81.10 грн
100+63.65 грн
200+59.96 грн
250+58.79 грн
Мінімальне замовлення: 4
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AUIRF1010ZSTRL auirf1010z.pdf
AUIRF1010ZSTRL
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 94A
Power dissipation: 140W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IDH20G120C5XKSA1 IDH20G120C5-DTE.pdf
IDH20G120C5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; PG-TO220-2; 330W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.5V
Max. forward impulse current: 0.168kA
Leakage current: 8.5µA
Power dissipation: 330W
Kind of package: tube
на замовлення 486 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+509.38 грн
В кошику  од. на суму  грн.
IDH20G65C6XKSA1 IDH20G65C6.pdf
IDH20G65C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 108W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 6G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 79A
Leakage current: 153µA
Power dissipation: 108W
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
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IDH20G65C5
IDH20G65C5
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; PG-TO220-2; 157W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 119A
Leakage current: 4.1µA
Power dissipation: 157W
Kind of package: tube
Heatsink thickness: 1.17...137mm
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IRLHS6242TRPBF irlhs6242pbf.pdf
IRLHS6242TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 10A; 1.98W; PQFN2X2
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 10A
Power dissipation: 1.98W
Case: PQFN2X2
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Features of semiconductor devices: logic level
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AUIRF7343QTR auirf7343q.pdf
AUIRF7343QTR
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 55/-55V; 4.7/-3.4A; 4.7W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55/-55V
Drain current: 4.7/-3.4A
Power dissipation: 4.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 43/95mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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DZ600N12K DZ600N18K.pdf
DZ600N12K
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; single diode; 1.2kV; If: 600A; BG-PB501-1; Ifsm: 22kA
Case: BG-PB501-1
Semiconductor structure: single diode
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.75V
Max. load current: 600A
Load current: 600A
Max. forward impulse current: 22kA
Max. off-state voltage: 1.2kV
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+24956.14 грн
В кошику  од. на суму  грн.
BAT60BE6327HTSA1 BAT60BE6327HTSA1.pdf
BAT60BE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 10V; 3A; 1.35W
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 10V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Max. forward impulse current: 5A
Power dissipation: 1.35W
на замовлення 305 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+25.29 грн
26+16.61 грн
50+12.24 грн
100+10.90 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
CY7C1480BV33-167AXI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; -40÷85°C
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 167MHz
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
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CY7C1480BV33-200AXC download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; TQFP100; parallel; 0÷70°C
Case: TQFP100
Mounting: SMD
Kind of memory: SRAM
Operating temperature: 0...70°C
Supply voltage: 3.135...3.6V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 200MHz
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
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CY7C1480BV33-250BZI download
Виробник: INFINEON TECHNOLOGIES
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; FBGA165; parallel; -40÷85°C
Case: FBGA165
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Supply voltage: 3.135...3.6V DC
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Frequency: 250MHz
Type of integrated circuit: SRAM memory
Kind of package: in-tray
Kind of interface: parallel
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AUIRGSL4062D1 AUIRGx4062D1.pdf
AUIRGSL4062D1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench; 600V; 39A; 123W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Turn-off time: 176ns
Type of transistor: IGBT
Power dissipation: 123W
Collector current: 39A
Gate-emitter voltage: ±20V
Pulsed collector current: 72A
Collector-emitter voltage: 600V
Technology: Trench
Gate charge: 77nC
Turn-on time: 35ns
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+234.82 грн
3+203.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRGSL4062DPBF irgs4062dpbf.pdf
IRGSL4062DPBF
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 48A; 250W; TO262
Case: TO262
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Type of transistor: IGBT
Power dissipation: 250W
Collector current: 48A
Collector-emitter voltage: 600V
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IPD33CN10NGATMA1 Infineon-IPP35CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42b457b44b1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 108A; 58W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Pulsed drain current: 108A
Power dissipation: 58W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 33mΩ
Mounting: SMD
Kind of channel: enhancement
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TLE42712AKSA1 TLE4271-2.pdf
TLE42712AKSA1
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO220-7; THT
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5V
Output current: 0.55A
Case: TO220-7
Mounting: THT
Kind of package: tube
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 6...40V
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TLE42712GATMA1 TLE4271-2G.pdf
TLE42712GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.55A; TO263-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.35V
Output voltage: 5V
Output current: 0.55A
Case: TO263-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 6...40V
на замовлення 832 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+177.02 грн
10+124.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
S26HL01GTFPBHB030
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; HyperBus; 166MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: HyperBus
Operating frequency: 166MHz
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Application: automotive
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IRFL4105TRPBF irfl4105pbf.pdf
IRFL4105TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.7A; 2.1W; SOT223
Kind of channel: enhancement
Mounting: SMD
Technology: HEXFET®
Type of transistor: N-MOSFET
Kind of package: reel
Case: SOT223
Polarisation: unipolar
Power dissipation: 2.1W
Drain current: 3.7A
Drain-source voltage: 55V
на замовлення 1815 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
7+66.83 грн
11+39.50 грн
50+30.11 грн
100+27.00 грн
200+24.32 грн
500+22.56 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BBY5303WE6327HTSA1 Infineon-BBY53SERIES-DS-v01_01-en.pdf
BBY5303WE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 6V; 20mA; SOD323; single diode; reel,tape; Ir: 200nA
Mounting: SMD
Features of semiconductor devices: RF
Semiconductor structure: single diode
Type of diode: varicap
Capacitance: 1.85...5.8pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 6V
Kind of package: reel; tape
Case: SOD323
на замовлення 2250 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
21+21.68 грн
27+15.93 грн
28+15.01 грн
100+12.33 грн
250+11.41 грн
500+10.73 грн
650+10.48 грн
1000+10.40 грн
Мінімальне замовлення: 21
В кошику  од. на суму  грн.
BB535E7904HTSA1 BB535-DTE.pdf
BB535E7904HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SOD323; single diode; reel,tape; 2÷20pF
Mounting: SMD
Features of semiconductor devices: RF
Semiconductor structure: single diode
Type of diode: varicap
Capacitance: 2...20pF
Leakage current: 0.2µA
Load current: 20mA
Max. off-state voltage: 30V
Kind of package: reel; tape
Case: SOD323
на замовлення 3 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+150.83 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BBY5502VH6327XTSA1 BBY55_SER.pdf
BBY5502VH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Case: SC79
Features of semiconductor devices: RF
Type of diode: varicap
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 5.5...19.6pF
Leakage current: 0.1µA
Kind of package: reel; tape
Load current: 20mA
Max. off-state voltage: 16V
на замовлення 1933 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
23+19.87 грн
27+15.77 грн
28+15.18 грн
Мінімальне замовлення: 23
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DD340N16SHPSA1 DD340N16S.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 330A; BG-PB50SB-1; screw
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 10kA
Case: BG-PB50SB-1
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DD340N20SHPSA1 DD340N20S.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 330A; BG-PB50SB-1; Ifsm: 10kA
Case: BG-PB50SB-1
Max. forward impulse current: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 2kV
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DD340N18S DD340N18S.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 330A; BG-PB50SB-1; screw
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.31V
Load current: 330A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 10kA
Case: BG-PB50SB-1
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DD340N22SHPSA1 DD340N22S.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 330A; BG-PB50SB-1; screw
Max. forward voltage: 1.31V
Case: BG-PB50SB-1
Mechanical mounting: screw
Load current: 330A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 10kA
Electrical mounting: screw
Semiconductor structure: double series
Type of semiconductor module: diode
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AIDW16S65C5XKSA1 Infineon-AIDW16S65C5-DS-v01_03-EN.pdf?fileId=5546d462675a6972016773c2d4eb5680
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO247-3; 94W
Max. forward voltage: 1.7V
Load current: 16A
Power dissipation: 94W
Max. forward impulse current: 95A
Max. off-state voltage: 650V
Application: automotive industry
Technology: CoolSiC™ 5G; SiC
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Case: TO247-3
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