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IPG20N06S4L26ATMA1 INFINEON TECHNOLOGIES Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 33W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 33W
Case: PG-TDSON-8
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
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BSC050N10NS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 136W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 136W
Case: PG-TDSON-8
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 61nC
Kind of channel: enhancement
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ISC011N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISC011N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6d6d80982 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 1.1mΩ
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
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ISC017N04NM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC017N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e446d60004 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 115W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 193A
Power dissipation: 115W
Case: PG-TDSON-8 FL
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
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BSC015NE2LS5IATMA1 INFINEON TECHNOLOGIES Infineon-BSC015NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3bdacb5c1b44 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 33A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 33A
Power dissipation: 50W
Case: PG-TDSON-8
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
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BSC025N08LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC025N08LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626b2d8e69016b4c46568213e4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
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BSC0500NSIATMA1 INFINEON TECHNOLOGIES Infineon-BSC0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd4e65546362 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
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BSZ0500NSIATMA1 INFINEON TECHNOLOGIES Infineon-BSZ0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd7c2c2163ad Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
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BSZ0501NSIATMA1 INFINEON TECHNOLOGIES Infineon-BSZ0501NSI-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014cff6f9da822b8 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 123A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 123A
Power dissipation: 50W
Case: PG-TDSON-8
On-state resistance: 2.1mΩ
Mounting: SMD
Kind of channel: enhancement
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IKFW90N60EH3XKSA1 INFINEON TECHNOLOGIES Infineon-IKFW90N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e976f32b5 Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 77A; 178W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
Turn-on time: 77ns
Turn-off time: 237ns
Gate charge: 440nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 77A
Power dissipation: 178W
Pulsed collector current: 300A
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
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BSC093N15NS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC093N15NS5-DS-v02_00-EN.pdf?fileId=5546d462503812bb01507033a3fa1175 Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IRS2453DSTRPBF IRS2453DSTRPBF INFINEON TECHNOLOGIES irs2453d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 1W
Voltage class: 600V
Topology: H-bridge
на замовлення 2425 шт:
термін постачання 14-30 дні (днів)
5+87.22 грн
10+79.67 грн
25+74.64 грн
Мінімальне замовлення: 5
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IPT067N20NM6ATMA1 INFINEON TECHNOLOGIES IPT067N20NM6ATMA1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 137A; Idm: 548A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 137A
Pulsed drain current: 548A
Power dissipation: 300W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel
Kind of channel: enhancement
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IPB043N10NF2SATMA1 INFINEON TECHNOLOGIES Infineon-IPB043N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc08991b18 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 135A; 167W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 135A
Power dissipation: 167W
Case: D2PAK-3
On-state resistance: 4.35mΩ
Mounting: SMD
Gate charge: 57nC
Kind of channel: enhancement
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IRFR24N15DTRPBF IRFR24N15DTRPBF INFINEON TECHNOLOGIES IRFR24N15DTRPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFR5410TRPBF IRFR5410TRPBF INFINEON TECHNOLOGIES irfr5410pbf.pdf description Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 4032 шт:
термін постачання 14-30 дні (днів)
5+111.09 грн
10+65.58 грн
100+44.20 грн
250+38.58 грн
500+35.06 грн
1000+34.64 грн
Мінімальне замовлення: 5
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IRS2104STRPBF INFINEON TECHNOLOGIES IRS2104STRPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 270mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 270mA
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
2500+51.57 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BFQ19SH6327XTSA1 BFQ19SH6327XTSA1 INFINEON TECHNOLOGIES BFQ19SH6327XTSA1-dte.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 0.12A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 5.5GHz
на замовлення 1902 шт:
термін постачання 14-30 дні (днів)
14+33.42 грн
17+25.49 грн
19+22.81 грн
25+20.97 грн
Мінімальне замовлення: 14
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IRF7821TRPBF IRF7821TRPBF INFINEON TECHNOLOGIES irf7821pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
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IRF7821TRPBFXTMA1 INFINEON TECHNOLOGIES irf7821pbf.pdf?fileId=5546d462533600a401535608d7f31d06 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PVA1352NPBF INFINEON TECHNOLOGIES IRSD-S-A0001054330-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PVA; 5Ω; THT; DIP8
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Manufacturer series: PVA
On-state resistance: 5Ω
Mounting: THT
Case: DIP8
Body dimensions: 8.6x6.5x3.9mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Number of poles: 1
Operating temperature: -40...85°C
на замовлення 4789 шт:
термін постачання 14-30 дні (днів)
50+427.20 грн
Мінімальне замовлення: 50
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TLS715B0NAV50XTSA1 INFINEON TECHNOLOGIES Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-TSNP-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.15A
Case: PG-TSNP-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...40V
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TLS835B2ELVSEXUMA1 INFINEON TECHNOLOGIES Infineon-TLS835B2EL%20VSE-DS-v01_10-EN.pdf?fileId=5546d462625a528f01629aaf62894b1b Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V,5V; 0.35A; SSOP14
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V; 5V
Output current: 0.35A
Case: SSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...40V
Integrated circuit features: Output Voltage Select Pin
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XMC4200F64F256ABXQMA1 XMC4200F64F256ABXQMA1 INFINEON TECHNOLOGIES XMC4100-4200-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-64
Family: XMC4200
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Memory: 40kB SRAM; 256kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
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IRF6216TRPBF IRF6216TRPBF INFINEON TECHNOLOGIES irf6216pbf.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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TT104N12KOFKHPSA1 TT104N12KOFKHPSA1 INFINEON TECHNOLOGIES TT104N_Type.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 104A; BG-PB20-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 104A
Case: BG-PB20-1
Max. forward voltage: 1.62V
Max. forward impulse current: 2.05kA
Gate current: 120mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IRS2308STRPBF INFINEON TECHNOLOGIES irs2308.pdf?fileId=5546d462533600a40153567a98ac2804 Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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FS100R12W2T7B11BOMA1 INFINEON TECHNOLOGIES Infineon-FS100R12W2T7_B11-DS-v02_01-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640 Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Technology: EasyPACK™ 2B
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Case: AG-EASY2B-2
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IDW80C65D1XKSA1 IDW80C65D1XKSA1 INFINEON TECHNOLOGIES infineon-idw80c65d1-ds-en.pdf Infineon-IDW80C65D1-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a529d447a5287 Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; Ifsm: 320A; Ufmax: 1.7V; Ir: 40uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 80A
Semiconductor structure: common cathode
Max. forward voltage: 1.7V
Max. forward impulse current: 0.32kA
Reverse recovery time: 77ns
Leakage current: 40µA
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
3+181.54 грн
Мінімальне замовлення: 3
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IDH16G65C6XKSA1 IDH16G65C6XKSA1 INFINEON TECHNOLOGIES IDH16G65C6.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; PG-TO220-2; 97W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 65A
Leakage current: 123µA
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Power dissipation: 97W
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IDDD16G65C6XTMA1 INFINEON TECHNOLOGIES IDDD16G65C6.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 16A
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: PG-HDSOP-10-1
Max. forward voltage: 1.25V
Max. forward impulse current: 65A
Leakage current: 1.6µA
Kind of package: reel; tape
Power dissipation: 141W
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IPD180N10N3GATMA1 INFINEON TECHNOLOGIES IPD180N10N3_G.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 43A; Idm: 43A; 71W; DPAK
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 43A
Power dissipation: 71W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Technology: MOSFET
Application: automotive industry
на замовлення 22500 шт:
термін постачання 14-30 дні (днів)
2500+40.01 грн
Мінімальне замовлення: 2500
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BCR116SH6327 BCR116SH6327 INFINEON TECHNOLOGIES BCR116.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Mounting: SMD
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT363
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
31+13.42 грн
Мінімальне замовлення: 31
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SPD08N50C3ATMA1 INFINEON TECHNOLOGIES Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 7.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 7.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
2500+50.13 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BAT5402VH6327XTSA1 BAT5402VH6327XTSA1 INFINEON TECHNOLOGIES BAT5404E6327HTSA1.pdf Infineon-BAT54SERIES-DS-v01_01-en.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
на замовлення 355 шт:
термін постачання 14-30 дні (днів)
46+9.93 грн
53+8.05 грн
55+7.63 грн
70+6.04 грн
100+5.28 грн
250+4.24 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
BSZ123N08NS3GATMA1 BSZ123N08NS3GATMA1 INFINEON TECHNOLOGIES BSZ123N08NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 66W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB039N10N3GATMA1 IPB039N10N3GATMA1 INFINEON TECHNOLOGIES IPB039N10N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Case: PG-TO263-7
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
On-state resistance: 3.9mΩ
Power dissipation: 214W
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IPT039N15N5ATMA1 INFINEON TECHNOLOGIES Infineon-IPT039N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb229dfe6ca5 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 190A; 319W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 190A
Power dissipation: 319W
Case: HSOF-8
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
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IDH16G65C5 IDH16G65C5 INFINEON TECHNOLOGIES Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; PG-TO220-2; 129W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 105A
Leakage current: 3.2µA
Power dissipation: 129W
Kind of package: tube
Heatsink thickness: 1.17...137mm
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IPA50R380CEXKSA2 IPA50R380CEXKSA2 INFINEON TECHNOLOGIES IPA50R380CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; 29.2W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Power dissipation: 29.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 441 шт:
термін постачання 14-30 дні (днів)
5+98.44 грн
7+69.78 грн
10+60.55 грн
50+45.12 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPP50R380CEXKSA1 IPP50R380CEXKSA1 INFINEON TECHNOLOGIES IPP50R380CE-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 66 шт:
термін постачання 14-30 дні (днів)
5+102.96 грн
6+70.28 грн
10+62.31 грн
50+47.80 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPD50R380CEAUMA1 INFINEON TECHNOLOGIES Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14.1A; 98W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14.1A
Power dissipation: 98W
Case: DPAK; TO252
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 24.8nC
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IRS25752LTRPBF IRS25752LTRPBF INFINEON TECHNOLOGIES IRS25752ltrpbf.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SOT23-6
Output current: -240...160mA
Number of channels: 1
Supply voltage: 10...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 225ns
Turn-off time: 255ns
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IRS2302SPBF IRS2302SPBF INFINEON TECHNOLOGIES IRS2302SPBF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 650ns
Turn-off time: 200ns
Power: 625mW
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BAT15099RE6327HTSA1 INFINEON TECHNOLOGIES Infineon-BAT15-099R-DS-v01_00-EN.pdf?fileId=5546d46265f064ff0166389632964e8c Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
товару немає в наявності
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BAT6402VH6327XTSA1 BAT6402VH6327XTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 40V; 0.25A; 250mW
Case: SC79
Type of diode: Schottky switching
Semiconductor structure: single diode
Load current: 0.25A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Mounting: SMD
на замовлення 5920 шт:
термін постачання 14-30 дні (днів)
18+25.29 грн
22+19.46 грн
26+16.61 грн
100+8.29 грн
250+6.52 грн
500+5.64 грн
1000+5.03 грн
3000+4.51 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
SPP80P06PHXKSA1 SPP80P06PHXKSA1 INFINEON TECHNOLOGIES SPP80P06PHXKSA1-DTE.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -80A
Power dissipation: 340W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 91 шт:
термін постачання 14-30 дні (днів)
2+292.62 грн
5+212.18 грн
10+182.83 грн
50+140.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS3142DATMA1 BTS3142DATMA1 INFINEON TECHNOLOGIES BTS3142D.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4.6A; Ch: 1; N-Channel; SMD; TO252-3
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: TO252-3
On-state resistance: 28mΩ
Number of channels: 1
Output current: 4.6A
Output voltage: 42V
Power dissipation: 59W
Mounting: SMD
Technology: HITFET®
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IPI040N06N3GXKSA1 IPI040N06N3GXKSA1 INFINEON TECHNOLOGIES IPI040N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 4mΩ
Power dissipation: 188W
Gate-source voltage: ±20V
Drain current: 90A
Drain-source voltage: 60V
на замовлення 133 шт:
термін постачання 14-30 дні (днів)
6+70.45 грн
10+62.90 грн
50+57.03 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPP040N06N3GXKSA1 IPP040N06N3GXKSA1 INFINEON TECHNOLOGIES IPP040N06N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 4mΩ
Power dissipation: 188W
Gate-source voltage: ±20V
Drain current: 90A
Drain-source voltage: 60V
Kind of package: tube
на замовлення 336 шт:
термін постачання 14-30 дні (днів)
4+149.92 грн
10+77.16 грн
50+73.80 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPP040N06NF2SAKMA1 IPP040N06NF2SAKMA1 INFINEON TECHNOLOGIES Infineon-IPP040N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60c2843c86 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Mounting: THT
Case: TO220-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 38nC
On-state resistance: 4mΩ
Power dissipation: 107W
Drain current: 80A
Drain-source voltage: 60V
на замовлення 194 шт:
термін постачання 14-30 дні (днів)
6+86.70 грн
10+50.74 грн
50+41.76 грн
100+40.34 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPP040N06NXKSA1 IPP040N06NXKSA1 INFINEON TECHNOLOGIES Infineon-IPP040N06N-DS-v02_02-en.pdf?fileId=db3a30433727a44301372bbaa5ad4942 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220-3
Mounting: THT
Case: TO220-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 38nC
On-state resistance: 4mΩ
Power dissipation: 36W
Drain current: 69A
Drain-source voltage: 60V
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
6+85.80 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPP040N06NAKSA1 IPP040N06NAKSA1 INFINEON TECHNOLOGIES IPP040N06NAKSA1-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: PG-TO220-3
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: tube
Technology: OptiMOS™
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IPA040N06NM5SXKSA1 IPA040N06NM5SXKSA1 INFINEON TECHNOLOGIES Infineon-IPA040N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cd966136dfa Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 288A; 36W; TO220FP
Case: TO220FP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 4mΩ
Drain current: 51A
Power dissipation: 36W
Gate-source voltage: ±20V
Pulsed drain current: 288A
Drain-source voltage: 60V
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IAUZ40N06S5L050ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N06S5L050-DataSheet-v01_02-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5178d6ff1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 36.7nC
On-state resistance: 6.4mΩ
Drain current: 12A
Power dissipation: 71W
Gate-source voltage: ±16V
Pulsed drain current: 252A
Drain-source voltage: 60V
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IAUZ40N06S5N050ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 30.5nC
On-state resistance: 6mΩ
Drain current: 14A
Power dissipation: 71W
Gate-source voltage: ±20V
Pulsed drain current: 241A
Drain-source voltage: 60V
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IAUZ40N06S5N105ATMA1 INFINEON TECHNOLOGIES Infineon-IAUZ40N06S5N105-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5239e6ff4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 16.3nC
On-state resistance: 12.8mΩ
Drain current: 8A
Power dissipation: 42W
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 60V
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1EDC40I12AHXUMA1 1EDC40I12AHXUMA1 INFINEON TECHNOLOGIES 1EDCxxX12AH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
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1EDC20I12AHXUMA1 1EDC20I12AHXUMA1 INFINEON TECHNOLOGIES 1EDCxxX12AH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
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1EDC60I12AHXUMA1 1EDC60I12AHXUMA1 INFINEON TECHNOLOGIES 1EDCxxX12AH.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
на замовлення 578 шт:
термін постачання 14-30 дні (днів)
3+205.02 грн
5+170.25 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPG20N06S4L26ATMA1 Infineon-IPG20N06S4L_26-DS-v01_00-en.pdf?fileId=db3a30432ba3fa6f012bbf68dd216c28&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 33W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 33W
Case: PG-TDSON-8
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 20nC
Kind of channel: enhancement
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BSC050N10NS5ATMA1 Infineon-BSC050N10NS5-DS-v02_00-EN.pdf?fileId=5546d462636cc8fb0164366daea34f7d
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 136W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 136W
Case: PG-TDSON-8
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 61nC
Kind of channel: enhancement
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ISC011N03L5SATMA1 Infineon-ISC011N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6d6d80982
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 96W; PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TDSON-8
Polarisation: unipolar
On-state resistance: 1.1mΩ
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 96W
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ISC017N04NM5ATMA1 Infineon-ISC017N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e446d60004
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 193A; 115W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 193A
Power dissipation: 115W
Case: PG-TDSON-8 FL
On-state resistance: 1.8mΩ
Mounting: SMD
Gate charge: 51nC
Kind of channel: enhancement
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BSC015NE2LS5IATMA1 Infineon-BSC015NE2LS5I-DS-v02_00-EN.pdf?fileId=5546d4624f205c9a014f3bdacb5c1b44
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 33A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 33A
Power dissipation: 50W
Case: PG-TDSON-8
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 30nC
Kind of channel: enhancement
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BSC025N08LS5ATMA1 Infineon-BSC025N08LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626b2d8e69016b4c46568213e4
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 55nC
Kind of channel: enhancement
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BSC0500NSIATMA1 Infineon-BSC0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd4e65546362
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
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BSZ0500NSIATMA1 Infineon-BSZ0500NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efd7c2c2163ad
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 52nC
Kind of channel: enhancement
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BSZ0501NSIATMA1 Infineon-BSZ0501NSI-DS-v02_00-EN.pdf?fileId=5546d4624cb7f111014cff6f9da822b8
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 123A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 123A
Power dissipation: 50W
Case: PG-TDSON-8
On-state resistance: 2.1mΩ
Mounting: SMD
Kind of channel: enhancement
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IKFW90N60EH3XKSA1 Infineon-IKFW90N60EH3-DS-v02_01-EN.pdf?fileId=5546d46262b31d2e0163016e976f32b5
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 77A; 178W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Technology: TRENCHSTOP™
Turn-on time: 77ns
Turn-off time: 237ns
Gate charge: 440nC
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Collector current: 77A
Power dissipation: 178W
Pulsed collector current: 300A
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
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BSC093N15NS5ATMA1 Infineon-BSC093N15NS5-DS-v02_00-EN.pdf?fileId=5546d462503812bb01507033a3fa1175
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
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IRS2453DSTRPBF irs2453d.pdf
IRS2453DSTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Turn-off time: 50ns
Turn-on time: 0.12µs
Power: 1W
Voltage class: 600V
Topology: H-bridge
на замовлення 2425 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+87.22 грн
10+79.67 грн
25+74.64 грн
Мінімальне замовлення: 5
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IPT067N20NM6ATMA1 IPT067N20NM6ATMA1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 200V; 137A; Idm: 548A
Type of transistor: N-MOSFET
Technology: OptiMOS™ 6
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 137A
Pulsed drain current: 548A
Power dissipation: 300W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 6.7mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel
Kind of channel: enhancement
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IPB043N10NF2SATMA1 Infineon-IPB043N10NF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c83cd30810183f4dc08991b18
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 135A; 167W; D2PAK-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 135A
Power dissipation: 167W
Case: D2PAK-3
On-state resistance: 4.35mΩ
Mounting: SMD
Gate charge: 57nC
Kind of channel: enhancement
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IRFR24N15DTRPBF IRFR24N15DTRPBF.pdf
IRFR24N15DTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 24A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 24A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IRFR5410TRPBF description irfr5410pbf.pdf
IRFR5410TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13A; 66W; DPAK
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13A
Power dissipation: 66W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
на замовлення 4032 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+111.09 грн
10+65.58 грн
100+44.20 грн
250+38.58 грн
500+35.06 грн
1000+34.64 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IRS2104STRPBF IRS2104STRPBF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 270mA; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 270mA
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Supply voltage: 10...20V
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2500+51.57 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BFQ19SH6327XTSA1 BFQ19SH6327XTSA1-dte.pdf
BFQ19SH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 0.12A; 1W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 0.12A
Power dissipation: 1W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 5.5GHz
на замовлення 1902 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
14+33.42 грн
17+25.49 грн
19+22.81 грн
25+20.97 грн
Мінімальне замовлення: 14
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IRF7821TRPBF irf7821pbf.pdf
IRF7821TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 2.5W
Technology: HEXFET®
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IRF7821TRPBFXTMA1 irf7821pbf.pdf?fileId=5546d462533600a401535608d7f31d06
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.6A; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.6A
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PVA1352NPBF IRSD-S-A0001054330-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; PVA; 5Ω; THT; DIP8
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Manufacturer series: PVA
On-state resistance: 5Ω
Mounting: THT
Case: DIP8
Body dimensions: 8.6x6.5x3.9mm
Leads: for PCB
Insulation voltage: 4kV
Kind of output: MOSFET
Number of poles: 1
Operating temperature: -40...85°C
на замовлення 4789 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+427.20 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
TLS715B0NAV50XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-TSNP-7; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 5V
Output current: 0.15A
Case: PG-TSNP-7
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...40V
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TLS835B2ELVSEXUMA1 Infineon-TLS835B2EL%20VSE-DS-v01_10-EN.pdf?fileId=5546d462625a528f01629aaf62894b1b
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V,5V; 0.35A; SSOP14
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.5V
Output voltage: 3.3V; 5V
Output current: 0.35A
Case: SSOP14
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3...40V
Integrated circuit features: Output Voltage Select Pin
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XMC4200F64F256ABXQMA1 XMC4100-4200-DTE.pdf
XMC4200F64F256ABXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LQFP-64; 40kBSRAM,256kBFLASH; 3.3VDC
Interface: CAN x2; GPIO; I2C; I2S; LIN; SPI; UART; USB
Integrated circuit features: clock gaiting; DSP; RTC; watchdog
Kind of architecture: Cortex M4
Case: PG-LQFP-64
Family: XMC4200
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 9
Number of inputs/outputs: 35
Memory: 40kB SRAM; 256kB FLASH
Kind of core: 32-bit
Type of integrated circuit: ARM microcontroller
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IRF6216TRPBF irf6216pbf.pdf
IRF6216TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -2.2A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -2.2A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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TT104N12KOFKHPSA1 TT104N_Type.pdf
TT104N12KOFKHPSA1
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 104A; BG-PB20-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 104A
Case: BG-PB20-1
Max. forward voltage: 1.62V
Max. forward impulse current: 2.05kA
Gate current: 120mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IRS2308STRPBF irs2308.pdf?fileId=5546d462533600a40153567a98ac2804
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
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FS100R12W2T7B11BOMA1 Infineon-FS100R12W2T7_B11-DS-v02_01-EN.pdf?fileId=5546d46267c74c9a01683d5d7ab56640
Виробник: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Technology: EasyPACK™ 2B
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.2kV
Case: AG-EASY2B-2
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IDW80C65D1XKSA1 infineon-idw80c65d1-ds-en.pdf Infineon-IDW80C65D1-DS-v02_01-EN.pdf?fileId=5546d4624a0bf290014a529d447a5287
IDW80C65D1XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 650V; 80A; Ifsm: 320A; Ufmax: 1.7V; Ir: 40uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 650V
Load current: 80A
Semiconductor structure: common cathode
Max. forward voltage: 1.7V
Max. forward impulse current: 0.32kA
Reverse recovery time: 77ns
Leakage current: 40µA
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+181.54 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IDH16G65C6XKSA1 IDH16G65C6.pdf
IDH16G65C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; PG-TO220-2; 97W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.25V
Max. forward impulse current: 65A
Leakage current: 123µA
Kind of package: tube
Heatsink thickness: 1.17...1.37mm
Power dissipation: 97W
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IDDD16G65C6XTMA1 IDDD16G65C6.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PG-HDSOP-10-1; SiC; SMD; 650V; 16A
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: PG-HDSOP-10-1
Max. forward voltage: 1.25V
Max. forward impulse current: 65A
Leakage current: 1.6µA
Kind of package: reel; tape
Power dissipation: 141W
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IPD180N10N3GATMA1 IPD180N10N3_G.pdf
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 100V; 43A; Idm: 43A; 71W; DPAK
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 43A
Power dissipation: 71W
Case: DPAK
Gate-source voltage: 20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhancement
Technology: MOSFET
Application: automotive industry
на замовлення 22500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2500+40.01 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BCR116SH6327 BCR116.pdf
BCR116SH6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 0.25W; SOT363; R1: 4.7kΩ
Mounting: SMD
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Frequency: 150MHz
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT363
Type of transistor: NPN x2
Collector current: 0.1A
Power dissipation: 0.25W
Collector-emitter voltage: 50V
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
31+13.42 грн
Мінімальне замовлення: 31
В кошику  од. на суму  грн.
SPD08N50C3ATMA1 Infineon-SPD08N50C3-DS-v02_06-en.pdf?fileId=db3a30433f1b26e8013f1ea5b45f0334
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 500V; 7.6A; 83W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 500V
Drain current: 7.6A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: 20V
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2500+50.13 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
BAT5402VH6327XTSA1 BAT5404E6327HTSA1.pdf Infineon-BAT54SERIES-DS-v01_01-en.pdf
BAT5402VH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.2A; 230mW
Type of diode: Schottky switching
Case: SC79
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Power dissipation: 0.23W
Max. forward impulse current: 0.6A
на замовлення 355 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
46+9.93 грн
53+8.05 грн
55+7.63 грн
70+6.04 грн
100+5.28 грн
250+4.24 грн
Мінімальне замовлення: 46
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BSZ123N08NS3GATMA1 BSZ123N08NS3G-DTE.pdf
BSZ123N08NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 66W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 66W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB039N10N3GATMA1 IPB039N10N3G-DTE.pdf
IPB039N10N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 160A; 214W; PG-TO263-7
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Case: PG-TO263-7
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
On-state resistance: 3.9mΩ
Power dissipation: 214W
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IPT039N15N5ATMA1 Infineon-IPT039N15N5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7c9758f2017ccb229dfe6ca5
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 190A; 319W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 190A
Power dissipation: 319W
Case: HSOF-8
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
товару немає в наявності
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IDH16G65C5
IDH16G65C5
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; PG-TO220-2; 129W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Semiconductor structure: single diode
Case: PG-TO220-2
Max. forward voltage: 1.8V
Max. forward impulse current: 105A
Leakage current: 3.2µA
Power dissipation: 129W
Kind of package: tube
Heatsink thickness: 1.17...137mm
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IPA50R380CEXKSA2 IPA50R380CE-DTE.pdf
IPA50R380CEXKSA2
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; 29.2W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Power dissipation: 29.2W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 441 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+98.44 грн
7+69.78 грн
10+60.55 грн
50+45.12 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPP50R380CEXKSA1 IPP50R380CE-DTE.pdf
IPP50R380CEXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 66 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+102.96 грн
6+70.28 грн
10+62.31 грн
50+47.80 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IPD50R380CEAUMA1 Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14.1A; 98W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14.1A
Power dissipation: 98W
Case: DPAK; TO252
On-state resistance: 0.38Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 24.8nC
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IRS25752LTRPBF IRS25752ltrpbf.pdf
IRS25752LTRPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; SOT23-6
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: SOT23-6
Output current: -240...160mA
Number of channels: 1
Supply voltage: 10...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 225ns
Turn-off time: 255ns
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IRS2302SPBF IRS2302SPBF.pdf
IRS2302SPBF
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -0.35...0.2A
Number of channels: 2
Supply voltage: 5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 650ns
Turn-off time: 200ns
Power: 625mW
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BAT15099RE6327HTSA1 Infineon-BAT15-099R-DS-v01_00-EN.pdf?fileId=5546d46265f064ff0166389632964e8c
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching
Type of diode: Schottky switching
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BAT6402VH6327XTSA1 BAT6402VH6327XTSA1.pdf
BAT6402VH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 40V; 0.25A; 250mW
Case: SC79
Type of diode: Schottky switching
Semiconductor structure: single diode
Load current: 0.25A
Power dissipation: 0.25W
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Max. off-state voltage: 40V
Mounting: SMD
на замовлення 5920 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+25.29 грн
22+19.46 грн
26+16.61 грн
100+8.29 грн
250+6.52 грн
500+5.64 грн
1000+5.03 грн
3000+4.51 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
SPP80P06PHXKSA1 SPP80P06PHXKSA1-DTE.pdf
SPP80P06PHXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -80A; 340W; PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -80A
Power dissipation: 340W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 91 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+292.62 грн
5+212.18 грн
10+182.83 грн
50+140.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS3142DATMA1 BTS3142D.pdf
BTS3142DATMA1
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4.6A; Ch: 1; N-Channel; SMD; TO252-3
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Case: TO252-3
On-state resistance: 28mΩ
Number of channels: 1
Output current: 4.6A
Output voltage: 42V
Power dissipation: 59W
Mounting: SMD
Technology: HITFET®
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IPI040N06N3GXKSA1 IPI040N06N3G-DTE.pdf
IPI040N06N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO262-3
Mounting: THT
Case: PG-TO262-3
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 4mΩ
Power dissipation: 188W
Gate-source voltage: ±20V
Drain current: 90A
Drain-source voltage: 60V
на замовлення 133 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+70.45 грн
10+62.90 грн
50+57.03 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPP040N06N3GXKSA1 IPP040N06N3G-DTE.pdf
IPP040N06N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO220-3
Mounting: THT
Case: PG-TO220-3
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 4mΩ
Power dissipation: 188W
Gate-source voltage: ±20V
Drain current: 90A
Drain-source voltage: 60V
Kind of package: tube
на замовлення 336 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+149.92 грн
10+77.16 грн
50+73.80 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPP040N06NF2SAKMA1 Infineon-IPP040N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60c2843c86
IPP040N06NF2SAKMA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; TO220-3
Mounting: THT
Case: TO220-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 38nC
On-state resistance: 4mΩ
Power dissipation: 107W
Drain current: 80A
Drain-source voltage: 60V
на замовлення 194 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+86.70 грн
10+50.74 грн
50+41.76 грн
100+40.34 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPP040N06NXKSA1 Infineon-IPP040N06N-DS-v02_02-en.pdf?fileId=db3a30433727a44301372bbaa5ad4942
IPP040N06NXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220-3
Mounting: THT
Case: TO220-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 38nC
On-state resistance: 4mΩ
Power dissipation: 36W
Drain current: 69A
Drain-source voltage: 60V
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+85.80 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IPP040N06NAKSA1 IPP040N06NAKSA1-DTE.pdf
IPP040N06NAKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; 107W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 107W
Case: PG-TO220-3
On-state resistance: 4mΩ
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±20V
Kind of package: tube
Technology: OptiMOS™
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IPA040N06NM5SXKSA1 Infineon-IPA040N06NM5S-DataSheet-v02_01-EN.pdf?fileId=5546d4626cb27db2016d5cd966136dfa
IPA040N06NM5SXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 51A; Idm: 288A; 36W; TO220FP
Case: TO220FP
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Kind of package: tube
Mounting: THT
Polarisation: unipolar
On-state resistance: 4mΩ
Drain current: 51A
Power dissipation: 36W
Gate-source voltage: ±20V
Pulsed drain current: 288A
Drain-source voltage: 60V
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IAUZ40N06S5L050ATMA1 Infineon-IAUZ40N06S5L050-DataSheet-v01_02-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5178d6ff1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 12A; Idm: 252A; 71W
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 36.7nC
On-state resistance: 6.4mΩ
Drain current: 12A
Power dissipation: 71W
Gate-source voltage: ±16V
Pulsed drain current: 252A
Drain-source voltage: 60V
товару немає в наявності
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IAUZ40N06S5N050ATMA1 Infineon-IAUZ40N06S5N050-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f47191a561b9
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 241A; 71W
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 30.5nC
On-state resistance: 6mΩ
Drain current: 14A
Power dissipation: 71W
Gate-source voltage: ±20V
Pulsed drain current: 241A
Drain-source voltage: 60V
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IAUZ40N06S5N105ATMA1 Infineon-IAUZ40N06S5N105-DataSheet-v01_00-EN.pdf?fileId=5546d4627a0b0c7b017a1eb5239e6ff4
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Case: PG-TSDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 16.3nC
On-state resistance: 12.8mΩ
Drain current: 8A
Power dissipation: 42W
Gate-source voltage: ±20V
Pulsed drain current: 120A
Drain-source voltage: 60V
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1EDC40I12AHXUMA1 1EDCxxX12AH.pdf
1EDC40I12AHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -4...4A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
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1EDC20I12AHXUMA1 1EDCxxX12AH.pdf
1EDC20I12AHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
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1EDC60I12AHXUMA1 1EDCxxX12AH.pdf
1EDC60I12AHXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -6...6A
Number of channels: 1
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 600/650/1200V
на замовлення 578 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+205.02 грн
5+170.25 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
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