Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123023) > Сторінка 2018 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IPB160N04S4LH1ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 160A Pulsed drain current: 640A Power dissipation: 167W Case: PG-TO263-7-3 Gate-source voltage: -16...20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||
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IRS2304SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Power: 625mW Turn-off time: 185ns |
на замовлення 80 шт: термін постачання 14-30 дні (днів) |
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BTS4141N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD Technology: Classic PROFET Kind of integrated circuit: high-side Type of integrated circuit: power switch Mounting: SMD Kind of output: N-Channel Case: PG-SOT223-4 On-state resistance: 0.175Ω Output current: 0.7A Output voltage: 12...45V Number of channels: 1 |
на замовлення 2411 шт: термін постачання 14-30 дні (днів) |
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BTS4880R | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 0.625A; Ch: 1; N-Channel; SMD; BSSOP36 Type of integrated circuit: power switch Mounting: SMD Number of channels: 1 Case: BSSOP36 Kind of output: N-Channel On-state resistance: 0.15Ω Output current: 0.625A Supply voltage: 11...45V DC Technology: Classic PROFET Kind of integrated circuit: high-side |
на замовлення 755 шт: термін постачання 14-30 дні (днів) |
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BTS452T | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5 Kind of output: N-Channel Technology: Classic PROFET Case: TO252-5 Kind of integrated circuit: high-side Number of channels: 1 On-state resistance: 0.15Ω Mounting: SMD Supply voltage: 6...52V DC Output current: 1.8A Type of integrated circuit: power switch |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS4175SGA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Case: SO8 On-state resistance: 0.175Ω Mounting: SMD Type of integrated circuit: power switch Number of channels: 1 Output current: 1.3A Supply voltage: 6...52V DC Technology: Classic PROFET Kind of integrated circuit: high-side Kind of output: N-Channel |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS436L2GATMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 9.8A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: D2PAK On-state resistance: 35mΩ Supply voltage: 4.7...41V DC Technology: SIPMOS™ Operating temperature: -40...150°C Power dissipation: 75W Integrated circuit features: thermal protection Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
| SPD06N80C3ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.8A Pulsed drain current: 18A Power dissipation: 83W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.9Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
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IRFR1205TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 37A Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Power dissipation: 107W Technology: HEXFET® |
на замовлення 1159 шт: термін постачання 14-30 дні (днів) |
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IRFR120ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.7A Power dissipation: 35W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||
| BGS14MPA9E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switchesDescription: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz Case: ATSLP-9-3 Mounting: SMD Type of integrated circuit: RF switch Application: telecommunication Output configuration: SP4T Interface: MIPI Number of channels: 4 Bandwidth: 0.05...6GHz Supply voltage: 1.65...1.95V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRS21867STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -4...4A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 192ns Power: 625mW Turn-off time: 188ns |
на замовлення 1468 шт: термін постачання 14-30 дні (днів) |
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IRS2186STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -4...4A Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 192ns Power: 625mW Turn-off time: 188ns |
на замовлення 1298 шт: термін постачання 14-30 дні (днів) |
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IRS2110SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16 Output current: -2...2A Power: 1.25W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 500V Turn-on time: 155ns Turn-off time: 137ns |
на замовлення 59 шт: термін постачання 14-30 дні (днів) |
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IRS21864SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -4...4A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRS2118PBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,gate driver; DIP8; 1W Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Case: DIP8 Output current: -600...290mA Power: 1W Number of channels: 1 Supply voltage: 10...20V DC Mounting: THT Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 140ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IRS2181STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC8 Output current: 1.9A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Input voltage: 10...20V Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| IRS2109STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver Type of integrated circuit: driver Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
| IRS21864STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver Type of integrated circuit: driver Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
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IRS21814STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -2.3...1.9A Power: 1W Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 220ns Turn-off time: 240ns |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
| IRS2101STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver Type of integrated circuit: driver Mounting: SMD |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
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IRS21271STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1 Type of integrated circuit: driver Kind of integrated circuit: current sensor; high-side Case: SO8 Output current: -600...290mA Power: 625mW Number of channels: 1 Supply voltage: 9...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 0.2µs Turn-off time: 190ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IRS2183STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC8 Output current: 1.9A Number of channels: 2 Supply voltage: 10...20V Mounting: SMD Operating temperature: -40...125°C Input voltage: 10...20V Integrated circuit features: MOSFET |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
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IRF7205TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.6A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
на замовлення 1703 шт: термін постачання 14-30 дні (днів) |
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IRF7201TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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IRF7105TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8 Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 25/-25V Drain current: 3.5/-2.3A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.1/0.25Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
на замовлення 861 шт: термін постачання 14-30 дні (днів) |
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IRF7101TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.5A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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IRF7104TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.3A Power dissipation: 2W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhancement Technology: HEXFET® |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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BC858CE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
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IR2109STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -250...120mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 750ns Power: 625mW Turn-off time: 200ns |
на замовлення 3585 шт: термін постачання 14-30 дні (днів) |
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IR21094STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -250...120mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 750ns Power: 1W Turn-off time: 200ns |
на замовлення 1049 шт: термін постачання 14-30 дні (днів) |
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IR21094SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO14 Output current: -250...120mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 750ns Power: 1W Turn-off time: 200ns |
на замовлення 11 шт: термін постачання 14-30 дні (днів) |
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IR21084STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT driversDescription: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET; 10÷20V Type of integrated circuit: driver Kind of integrated circuit: high-side; low-side Case: SOIC14 Output current: 0.35A Number of channels: 2 Mounting: SMD Operating temperature: -40...125°C Input voltage: 10...20V Integrated circuit features: MOSFET |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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CY8C4245AXI-483 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: TQFP44 Number of inputs/outputs: 36 Supply voltage: 1.71...5.5V DC Memory: 4kB SRAM; 32kB FLASH Clock frequency: 48MHz Kind of core: 32-bit Integrated circuit features: CapSense; LCD controller Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||||||
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CY8C4125AXI-483 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: TQFP44 Number of inputs/outputs: 36 Supply voltage: 1.71...5.5V DC Memory: 4kB SRAM; 32kB FLASH Clock frequency: 24MHz Kind of core: 32-bit Integrated circuit features: CapSense; LCD controller Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C27543-24AXI | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 24MHz; TQFP44; 256BSRAM,16kBFLASH Type of integrated circuit: PSoC microcontroller Clock frequency: 24MHz Case: TQFP44 Memory: 256B SRAM; 16kB FLASH Number of inputs/outputs: 40 Mounting: SMD Supply voltage: 3...5.25V DC Interface: I2C; SPI; UART Kind of core: 8-bit |
товару немає в наявності |
Мінімальне замовлення: 160 шт В кошику од. на суму грн. | ||||||||||||||
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CY8C4124AXI-443 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,16kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: TQFP44 Number of inputs/outputs: 36 Supply voltage: 1.71...5.5V DC Memory: 4kB SRAM; 16kB FLASH Clock frequency: 24MHz Kind of core: 32-bit Integrated circuit features: CapSense; LCD controller Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 160 шт В кошику од. на суму грн. | ||||||||||||||
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CY8C4125AXI-473 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: TQFP44 Number of inputs/outputs: 36 Supply voltage: 1.71...5.5V DC Memory: 4kB SRAM; 32kB FLASH Clock frequency: 24MHz Kind of core: 32-bit Integrated circuit features: CapSense; LCD controller Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 320 шт В кошику од. на суму грн. | ||||||||||||||
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CY8C4125AXQ-483 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: TQFP44 Number of inputs/outputs: 36 Supply voltage: 1.71...5.5V DC Memory: 4kB SRAM; 32kB FLASH Clock frequency: 24MHz Kind of core: 32-bit Integrated circuit features: CapSense; LCD controller Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 320 шт В кошику од. на суму грн. | ||||||||||||||
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CY8C4245AXI-473 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: TQFP44 Number of inputs/outputs: 36 Supply voltage: 1.71...5.5V DC Memory: 4kB SRAM; 32kB FLASH Clock frequency: 48MHz Kind of core: 32-bit Integrated circuit features: CapSense; LCD controller Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1600 шт В кошику од. на суму грн. | ||||||||||||||
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CY8C4245AZI-M443 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: TQFP44 Number of inputs/outputs: 38 Supply voltage: 1.71...5.5V DC Memory: 4kB SRAM; 32kB FLASH Clock frequency: 48MHz Kind of core: 32-bit Integrated circuit features: CapSense; LCD controller Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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IRF4104PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Kind of channel: enhancement Gate charge: 68nC Kind of package: tube |
на замовлення 125 шт: термін постачання 14-30 дні (днів) |
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IPP041N04NGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3 Mounting: THT Kind of channel: enhancement Technology: OptiMOS™ 3 Type of transistor: N-MOSFET Case: PG-TO220-3 Kind of package: tube Polarisation: unipolar On-state resistance: 4.1mΩ Power dissipation: 94W Drain current: 80A Gate-source voltage: ±20V Drain-source voltage: 40V |
на замовлення 176 шт: термін постачання 14-30 дні (днів) |
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| IRF40H233XTMA1 | INFINEON TECHNOLOGIES |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W Type of transistor: N-MOSFET x2 Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 32A Pulsed drain current: 140A Power dissipation: 50W Case: PQFN5X6 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | |||||||||||||||
|
AUIRF4104STRL | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 10mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 68nC Kind of package: reel |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||||
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BAS3007ARPPE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT Case: SOT143 Max. forward impulse current: 5A Load current: 0.9A Features of semiconductor devices: Schottky Max. off-state voltage: 30V Type of bridge rectifier: single-phase Kind of package: reel; tape Electrical mounting: SMT |
на замовлення 697 шт: термін постачання 14-30 дні (днів) |
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BAS3005B02VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SC79; SMD; 30V; 0.5A Mounting: SMD Case: SC79 Type of diode: Schottky switching Semiconductor structure: single diode Load current: 0.5A Max. forward voltage: 0.62V Max. forward impulse current: 5A Max. off-state voltage: 30V |
на замовлення 1180 шт: термін постачання 14-30 дні (днів) |
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S29AL008J70TFI010 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel Mounting: SMD Type of integrated circuit: FLASH memory Operating temperature: -40...85°C Memory: 8Mb FLASH Kind of interface: parallel Case: TSSOP48 Interface: CFI; parallel Operating voltage: 2.7...3.6V Kind of memory: NOR |
на замовлення 1049 шт: термін постачання 14-30 дні (днів) |
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TT215N22KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modulesDescription: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 215A Case: BG-PB50-1 Max. forward voltage: 1.8V Max. forward impulse current: 7kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TLE8366EVXUMA1 | INFINEON TECHNOLOGIES |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC Type of integrated circuit: PMIC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
|
TT260N22KOFHOSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modulesDescription: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 260A Case: BG-PB50AT-1 Max. forward voltage: 1.45V Max. forward impulse current: 8kA Gate current: 200mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPD90N04S404ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A Type of transistor: N-MOSFET Technology: OptiMOS™ T2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 81A Pulsed drain current: 360A Power dissipation: 71W Case: PG-TO252-3-313 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel Kind of channel: enhancement |
на замовлення 2239 шт: термін постачання 14-30 дні (днів) |
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IPD90N04S4L04ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252 Type of transistor: N-MOSFET Drain-source voltage: 40V Drain current: 90A Power dissipation: 71W Case: DPAK; TO252 On-state resistance: 3.2mΩ Mounting: SMD Kind of channel: enhancement Application: automotive industry Polarisation: unipolar Gate charge: 60nC |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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SPD50N03S207GBTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 136W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 7.3mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ |
на замовлення 1332 шт: термін постачання 14-30 дні (днів) |
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IPD050N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 68W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
на замовлення 1285 шт: термін постачання 14-30 дні (днів) |
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IPD50N03S4L06ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 50A; 56W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 56W Case: DPAK; TO252 On-state resistance: 4.9mΩ Mounting: SMD Gate charge: 31nC Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
BSC050N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 66A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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BSZ050N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 50W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPP050N03LF2SAKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 53A; 65W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 53A Power dissipation: 65W Case: TO220-3 On-state resistance: 4.95mΩ Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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BSC050N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 72A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 |
товару немає в наявності |
В кошику од. на суму грн. |
| IPB160N04S4LH1ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Pulsed drain current: 640A
Power dissipation: 167W
Case: PG-TO263-7-3
Gate-source voltage: -16...20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 160A; Idm: 640A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Pulsed drain current: 640A
Power dissipation: 167W
Case: PG-TO263-7-3
Gate-source voltage: -16...20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IRS2304SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Power: 625mW
Turn-off time: 185ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Power: 625mW
Turn-off time: 185ns
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 169.65 грн |
| 5+ | 115.25 грн |
| 10+ | 88.72 грн |
| BTS4141N |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Technology: Classic PROFET
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Mounting: SMD
Kind of output: N-Channel
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Output current: 0.7A
Output voltage: 12...45V
Number of channels: 1
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.7A; Ch: 1; N-Channel; SMD
Technology: Classic PROFET
Kind of integrated circuit: high-side
Type of integrated circuit: power switch
Mounting: SMD
Kind of output: N-Channel
Case: PG-SOT223-4
On-state resistance: 0.175Ω
Output current: 0.7A
Output voltage: 12...45V
Number of channels: 1
на замовлення 2411 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 245.55 грн |
| 10+ | 151.73 грн |
| 100+ | 119.39 грн |
| 250+ | 106.96 грн |
| 500+ | 97.84 грн |
| 1000+ | 93.69 грн |
| BTS4880R |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: BSSOP36
Kind of output: N-Channel
On-state resistance: 0.15Ω
Output current: 0.625A
Supply voltage: 11...45V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.625A; Ch: 1; N-Channel; SMD; BSSOP36
Type of integrated circuit: power switch
Mounting: SMD
Number of channels: 1
Case: BSSOP36
Kind of output: N-Channel
On-state resistance: 0.15Ω
Output current: 0.625A
Supply voltage: 11...45V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
на замовлення 755 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 880.40 грн |
| 10+ | 648.37 грн |
| 100+ | 533.12 грн |
| 500+ | 512.40 грн |
| BTS452T |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Kind of output: N-Channel
Technology: Classic PROFET
Case: TO252-5
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.15Ω
Mounting: SMD
Supply voltage: 6...52V DC
Output current: 1.8A
Type of integrated circuit: power switch
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.8A; Ch: 1; N-Channel; SMD; TO252-5
Kind of output: N-Channel
Technology: Classic PROFET
Case: TO252-5
Kind of integrated circuit: high-side
Number of channels: 1
On-state resistance: 0.15Ω
Mounting: SMD
Supply voltage: 6...52V DC
Output current: 1.8A
Type of integrated circuit: power switch
товару немає в наявності
В кошику
од. на суму грн.
| BTS4175SGA |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.175Ω
Mounting: SMD
Type of integrated circuit: power switch
Number of channels: 1
Output current: 1.3A
Supply voltage: 6...52V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Case: SO8
On-state resistance: 0.175Ω
Mounting: SMD
Type of integrated circuit: power switch
Number of channels: 1
Output current: 1.3A
Supply voltage: 6...52V DC
Technology: Classic PROFET
Kind of integrated circuit: high-side
Kind of output: N-Channel
товару немає в наявності
В кошику
од. на суму грн.
| BTS436L2GATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V DC
Technology: SIPMOS™
Operating temperature: -40...150°C
Power dissipation: 75W
Integrated circuit features: thermal protection
Application: automotive industry
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 9.8A; Ch: 1; N-Channel; SMD; D2PAK; 75W
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 9.8A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: D2PAK
On-state resistance: 35mΩ
Supply voltage: 4.7...41V DC
Technology: SIPMOS™
Operating temperature: -40...150°C
Power dissipation: 75W
Integrated circuit features: thermal protection
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| SPD06N80C3ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.8A; Idm: 18A; 83W
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.8A
Pulsed drain current: 18A
Power dissipation: 83W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRFR1205TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 37A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 107W
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 37A; 107W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 37A
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Power dissipation: 107W
Technology: HEXFET®
на замовлення 1159 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 66.97 грн |
| 11+ | 38.31 грн |
| 100+ | 29.68 грн |
| 500+ | 27.20 грн |
| 1000+ | 25.45 грн |
| IRFR120ZTRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.7A
Power dissipation: 35W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.7A; 35W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.7A
Power dissipation: 35W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| BGS14MPA9E6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Case: ATSLP-9-3
Mounting: SMD
Type of integrated circuit: RF switch
Application: telecommunication
Output configuration: SP4T
Interface: MIPI
Number of channels: 4
Bandwidth: 0.05...6GHz
Supply voltage: 1.65...1.95V DC
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; MIPI; ATSLP-9-3; 1.65÷1.95VDC; 0.05÷6GHz
Case: ATSLP-9-3
Mounting: SMD
Type of integrated circuit: RF switch
Application: telecommunication
Output configuration: SP4T
Interface: MIPI
Number of channels: 4
Bandwidth: 0.05...6GHz
Supply voltage: 1.65...1.95V DC
товару немає в наявності
В кошику
од. на суму грн.
| IRS21867STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Power: 625mW
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Power: 625mW
Turn-off time: 188ns
на замовлення 1468 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 131.26 грн |
| 5+ | 120.22 грн |
| IRS2186STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Power: 625mW
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Power: 625mW
Turn-off time: 188ns
на замовлення 1298 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 130.36 грн |
| 10+ | 89.54 грн |
| 25+ | 82.91 грн |
| IRS2110SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...2A
Power: 1.25W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 500V
Turn-on time: 155ns
Turn-off time: 137ns
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.94 грн |
| 10+ | 183.24 грн |
| IRS21864SPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4...4A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
товару немає в наявності
В кошику
од. на суму грн.
| IRS2118PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; DIP8; 1W
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Case: DIP8
Output current: -600...290mA
Power: 1W
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 140ns
товару немає в наявності
В кошику
од. на суму грн.
| IRS2181STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRS2109STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRS21864STRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRS21814STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -2.3...1.9A
Power: 1W
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 240ns
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRS2101STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
Category: MOSFET/IGBT drivers
Description: IC: driver
Type of integrated circuit: driver
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRS21271STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor,high-side; SO8; -600÷290mA; 625mW; Ch: 1
Type of integrated circuit: driver
Kind of integrated circuit: current sensor; high-side
Case: SO8
Output current: -600...290mA
Power: 625mW
Number of channels: 1
Supply voltage: 9...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.2µs
Turn-off time: 190ns
товару немає в наявності
В кошику
од. на суму грн.
| IRS2183STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC8; 1.9A; Ch: 2; MOSFET
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC8
Output current: 1.9A
Number of channels: 2
Supply voltage: 10...20V
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 91.08 грн |
| IRF7205TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 1703 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 61.61 грн |
| 10+ | 42.53 грн |
| 50+ | 31.17 грн |
| 100+ | 27.69 грн |
| 250+ | 24.21 грн |
| 500+ | 21.97 грн |
| 1000+ | 19.82 грн |
| IRF7201TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; 2.5W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| IRF7105TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 25/-25V; 3.5/-2.3A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 3.5/-2.3A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.1/0.25Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 861 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 67.86 грн |
| 10+ | 45.27 грн |
| 50+ | 31.67 грн |
| 100+ | 27.20 грн |
| 250+ | 22.63 грн |
| 500+ | 20.06 грн |
| IRF7101TRPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 3.5A; 2W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.5A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| IRF7104TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -2.3A; 2W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2.3A
Power dissipation: 2W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| BC858CE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 41.46 грн |
| IR2109STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Power: 625mW
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Power: 625mW
Turn-off time: 200ns
на замовлення 3585 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 92.86 грн |
| 6+ | 70.48 грн |
| 10+ | 63.84 грн |
| 25+ | 57.21 грн |
| 50+ | 56.38 грн |
| IR21094STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Power: 1W
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 750ns
Power: 1W
Turn-off time: 200ns
на замовлення 1049 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 124.11 грн |
| 10+ | 87.89 грн |
| 25+ | 81.25 грн |
| 50+ | 77.11 грн |
| 100+ | 72.96 грн |
| 250+ | 69.65 грн |
| IR21094SPBF |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Power: 1W
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO14
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -250...120mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 750ns
Power: 1W
Turn-off time: 200ns
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 116.91 грн |
| 10+ | 92.03 грн |
| IR21084STRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.35A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,low-side; SOIC14; 350mA; Ch: 2; MOSFET; 10÷20V
Type of integrated circuit: driver
Kind of integrated circuit: high-side; low-side
Case: SOIC14
Output current: 0.35A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 10...20V
Integrated circuit features: MOSFET
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CY8C4245AXI-483 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику
од. на суму грн.
| CY8C4125AXI-483 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| CY8C27543-24AXI |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 256BSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Clock frequency: 24MHz
Case: TQFP44
Memory: 256B SRAM; 16kB FLASH
Number of inputs/outputs: 40
Mounting: SMD
Supply voltage: 3...5.25V DC
Interface: I2C; SPI; UART
Kind of core: 8-bit
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 256BSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Clock frequency: 24MHz
Case: TQFP44
Memory: 256B SRAM; 16kB FLASH
Number of inputs/outputs: 40
Mounting: SMD
Supply voltage: 3...5.25V DC
Interface: I2C; SPI; UART
Kind of core: 8-bit
товару немає в наявності
Мінімальне замовлення: 160 шт
В кошику
од. на суму грн.
| CY8C4124AXI-443 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,16kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 160 шт
В кошику
од. на суму грн.
| CY8C4125AXI-473 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 320 шт
В кошику
од. на суму грн.
| CY8C4125AXQ-483 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 320 шт
В кошику
од. на суму грн.
| CY8C4245AXI-473 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 36
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику
од. на суму грн.
| CY8C4245AZI-M443 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 38
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; TQFP44; 4kBSRAM,32kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: TQFP44
Number of inputs/outputs: 38
Supply voltage: 1.71...5.5V DC
Memory: 4kB SRAM; 32kB FLASH
Clock frequency: 48MHz
Kind of core: 32-bit
Integrated circuit features: CapSense; LCD controller
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRF4104PBF |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: tube
на замовлення 125 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 114.29 грн |
| 10+ | 73.79 грн |
| 50+ | 63.01 грн |
| 100+ | 58.04 грн |
| IPP041N04NGXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 4.1mΩ
Power dissipation: 94W
Drain current: 80A
Gate-source voltage: ±20V
Drain-source voltage: 40V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; 94W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 4.1mΩ
Power dissipation: 94W
Drain current: 80A
Gate-source voltage: ±20V
Drain-source voltage: 40V
на замовлення 176 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 106.25 грн |
| 10+ | 55.80 грн |
| 25+ | 49.75 грн |
| 50+ | 45.60 грн |
| 100+ | 41.87 грн |
| IRF40H233XTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; StrongIRFET™; unipolar; 40V; 32A; 50W
Type of transistor: N-MOSFET x2
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 32A
Pulsed drain current: 140A
Power dissipation: 50W
Case: PQFN5X6
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| AUIRF4104STRL |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 68nC
Kind of package: reel
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| BAS3007ARPPE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Max. forward impulse current: 5A
Load current: 0.9A
Features of semiconductor devices: Schottky
Max. off-state voltage: 30V
Type of bridge rectifier: single-phase
Kind of package: reel; tape
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 30V; If: 0.9A; Ifsm: 5A; SOT143; SMT
Case: SOT143
Max. forward impulse current: 5A
Load current: 0.9A
Features of semiconductor devices: Schottky
Max. off-state voltage: 30V
Type of bridge rectifier: single-phase
Kind of package: reel; tape
Electrical mounting: SMT
на замовлення 697 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 37.50 грн |
| 15+ | 28.52 грн |
| 17+ | 25.45 грн |
| 100+ | 18.41 грн |
| 500+ | 15.67 грн |
| BAS3005B02VH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.5A
Mounting: SMD
Case: SC79
Type of diode: Schottky switching
Semiconductor structure: single diode
Load current: 0.5A
Max. forward voltage: 0.62V
Max. forward impulse current: 5A
Max. off-state voltage: 30V
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC79; SMD; 30V; 0.5A
Mounting: SMD
Case: SC79
Type of diode: Schottky switching
Semiconductor structure: single diode
Load current: 0.5A
Max. forward voltage: 0.62V
Max. forward impulse current: 5A
Max. off-state voltage: 30V
на замовлення 1180 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 36+ | 12.50 грн |
| 41+ | 10.12 грн |
| 44+ | 9.62 грн |
| 100+ | 7.79 грн |
| 500+ | 6.63 грн |
| 1000+ | 6.30 грн |
| S29AL008J70TFI010 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 8Mb FLASH
Kind of interface: parallel
Case: TSSOP48
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 8MbFLASH; CFI,parallel; TSSOP48; parallel
Mounting: SMD
Type of integrated circuit: FLASH memory
Operating temperature: -40...85°C
Memory: 8Mb FLASH
Kind of interface: parallel
Case: TSSOP48
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Kind of memory: NOR
на замовлення 1049 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 228.58 грн |
| TT215N22KOF |
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Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 215A; BG-PB50-1; Ifsm: 7kA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 215A
Case: BG-PB50-1
Max. forward voltage: 1.8V
Max. forward impulse current: 7kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| TLE8366EVXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC
Type of integrated circuit: PMIC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TT260N22KOFHOSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 260A; BG-PB50AT-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 260A
Case: BG-PB50AT-1
Max. forward voltage: 1.45V
Max. forward impulse current: 8kA
Gate current: 200mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| IPD90N04S404ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Pulsed drain current: 360A
Power dissipation: 71W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T2; unipolar; 40V; 81A; Idm: 360A
Type of transistor: N-MOSFET
Technology: OptiMOS™ T2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 81A
Pulsed drain current: 360A
Power dissipation: 71W
Case: PG-TO252-3-313
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel
Kind of channel: enhancement
на замовлення 2239 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 98.22 грн |
| 6+ | 71.30 грн |
| 10+ | 62.18 грн |
| 25+ | 56.38 грн |
| IPD90N04S4L04ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 71W
Case: DPAK; TO252
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Polarisation: unipolar
Gate charge: 60nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 71W; DPAK,TO252
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Power dissipation: 71W
Case: DPAK; TO252
On-state resistance: 3.2mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Polarisation: unipolar
Gate charge: 60nC
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| SPD50N03S207GBTMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 136W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 136W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
на замовлення 1332 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 39.13 грн |
| 25+ | 37.14 грн |
| 100+ | 35.82 грн |
| 500+ | 34.41 грн |
| IPD050N03LGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
на замовлення 1285 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 96.43 грн |
| 10+ | 43.61 грн |
| 100+ | 32.83 грн |
| IPD50N03S4L06ATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 56W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK; TO252
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 56W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 56W
Case: DPAK; TO252
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 31nC
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BSC050N03LSGATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BSZ050N03LSGATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
В кошику
од. на суму грн.
| IPP050N03LF2SAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 53A; 65W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 53A
Power dissipation: 65W
Case: TO220-3
On-state resistance: 4.95mΩ
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BSC050N03MSGATMA1 |
![]() |
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 72A; 50W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 72A
Power dissipation: 50W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
товару немає в наявності
В кошику
од. на суму грн.
































