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IPW60R099CPFKSA1 IPW60R099CPFKSA1 INFINEON TECHNOLOGIES IPW60R099CP.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
1+468.74 грн
5+418.49 грн
В кошику  од. на суму  грн.
IPP60R099CPXKSA1 IPP60R099CPXKSA1 INFINEON TECHNOLOGIES IPP60R099CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 138 шт:
термін постачання 14-30 дні (днів)
2+438.94 грн
10+293.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R099C6XKSA1 IPP60R099C6XKSA1 INFINEON TECHNOLOGIES IPP60R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
2+330.56 грн
10+250.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R099P7 IPP60R099P7 INFINEON TECHNOLOGIES IPP60R099P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 138 шт:
термін постачання 14-30 дні (днів)
2+338.69 грн
3+282.62 грн
10+267.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R099CPAFKSA1 IPW60R099CPAFKSA1 INFINEON TECHNOLOGIES Infineon-IPW60R099CPA-DS-v02_00-en.pdf?fileId=db3a304328c6bd5c0128ee4b902f59fe Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: TO247-3
On-state resistance: 90mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 80nC
Application: automotive industry
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
1+536.48 грн
2+469.64 грн
5+412.62 грн
10+375.71 грн
В кошику  од. на суму  грн.
IPB60R099CPATMA1 IPB60R099CPATMA1 INFINEON TECHNOLOGIES IPB60R099CP-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO263-3-2
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of channel: enhancement
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IPW60R099C6FKSA1 IPW60R099C6FKSA1 INFINEON TECHNOLOGIES IPW60R099C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB60R099C7ATMA1 IPB60R099C7ATMA1 INFINEON TECHNOLOGIES IPB60R099C7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
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IPB60R099P7ATMA1 IPB60R099P7ATMA1 INFINEON TECHNOLOGIES IPB60R099P7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel
Kind of channel: enhancement
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IPW60R099C7XKSA1 IPW60R099C7XKSA1 INFINEON TECHNOLOGIES IPW60R099C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB60R099C6 IPB60R099C6 INFINEON TECHNOLOGIES IPB60R099C6.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB60R099C6ATMA1 IPB60R099C6ATMA1 INFINEON TECHNOLOGIES IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB60R099CPAATMA1 INFINEON TECHNOLOGIES Infineon-IPB60R099CPA-DS-v02_01-en.pdf?folderId=db3a30431a5c32f2011a8084a04a6500&fileId=db3a304328c6bd5c0128ee28d90159e0&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: D2PAK; TO263
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Application: automotive industry
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IPI60R099CPXKSA1 IPI60R099CPXKSA1 INFINEON TECHNOLOGIES IPI60R099CP-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO262-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO262-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
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IPP60R099C7XKSA1 IPP60R099C7XKSA1 INFINEON TECHNOLOGIES IPP60R099C7-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP60R099P6XKSA1 IPP60R099P6XKSA1 INFINEON TECHNOLOGIES IPP60R099P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPZA60R099P7XKSA1 IPZA60R099P7XKSA1 INFINEON TECHNOLOGIES IPZA60R099P7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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IPA040N06NXKSA1 IPA040N06NXKSA1 INFINEON TECHNOLOGIES IPA040N06N-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP
Mounting: THT
Case: TO220FP
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 4mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 69A
Drain-source voltage: 60V
Kind of package: tube
на замовлення 86 шт:
термін постачання 14-30 дні (днів)
3+177.92 грн
50+82.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPW60R070CFD7 IPW60R070CFD7 INFINEON TECHNOLOGIES IPW60R070CFD7.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 67nC
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IPW60R070P6XKSA1 IPW60R070P6XKSA1 INFINEON TECHNOLOGIES IPW60R070P6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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HFA15TB60PBF HFA15TB60PBF INFINEON TECHNOLOGIES HFA15TB60PBF.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; Ufmax: 1.7V; 74ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 74ns
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IRFR7440TRPBF INFINEON TECHNOLOGIES irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Pulsed drain current: 760A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB100N06S205ATMA4 IPB100N06S205ATMA4 INFINEON TECHNOLOGIES IPB100N06S205.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Technology: OptiMOS™
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BSZ100N06LS3GATMA1 BSZ100N06LS3GATMA1 INFINEON TECHNOLOGIES BSZ100N06LS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSZ100N06NSATMA1 BSZ100N06NSATMA1 INFINEON TECHNOLOGIES BSZ100N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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IPB100N06S2L05ATMA2 IPB100N06S2L05ATMA2 INFINEON TECHNOLOGIES IPB100N06S2L05.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Technology: OptiMOS™
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IPP100N06S2L05AKSA2 INFINEON TECHNOLOGIES Infineon-IPP_B100N06S2L_05-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4322a685747&ack=t Category: THT N channel transistors
Description: Transistor: N-MOSFET; 55V; 100A; 300W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 230nC
Kind of channel: enhancement
Application: automotive industry
Technology: MOSFET
на замовлення 750 шт:
термін постачання 14-30 дні (днів)
50+211.34 грн
200+176.96 грн
Мінімальне замовлення: 50
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FM25VN10-G FM25VN10-G INFINEON TECHNOLOGIES Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
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FM25V20A-DGQTR FM25V20A-DGQTR INFINEON TECHNOLOGIES FM25V20A-DGQ-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2...3.6V DC
Memory: 2Mb FRAM
Memory organisation: 256kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
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FM25V20A-DGTR FM25V20A-DGTR INFINEON TECHNOLOGIES FM25V20A-DG-DTE.pdf Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2...3.6V DC
Memory: 2Mb FRAM
Memory organisation: 256kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
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TD160N18SOF INFINEON TECHNOLOGIES TT160N18SOF_TD160N18SOF.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Max. load current: 160A
Mechanical mounting: screw
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TT160N18SOF INFINEON TECHNOLOGIES TT160N18SOF_TD160N18SOF.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IPT010N08NM5ATMA1 INFINEON TECHNOLOGIES Infineon-IPT010N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d462766cbe860176761d659d581e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 425A; 375W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 425A
Power dissipation: 375W
Case: HSOF-8
On-state resistance: 1.05mΩ
Mounting: SMD
Gate charge: 178nC
Kind of channel: enhancement
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IDWD30G120C5XKSA1 IDWD30G120C5XKSA1 INFINEON TECHNOLOGIES infineon-idwd30g120c5-datasheet-en.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Load current: 30A
Max. forward impulse current: 0.24kA
Power dissipation: 332W
Max. off-state voltage: 1.2kV
Technology: CoolSiC™ 5G; SiC
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IPW60R041C6FKSA1 IPW60R041C6FKSA1 INFINEON TECHNOLOGIES IPW60R041C6-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
1+852.58 грн
5+683.50 грн
В кошику  од. на суму  грн.
AIHD04N60RATMA1 AIHD04N60RATMA1 INFINEON TECHNOLOGIES AIHD04N60R.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
Turn-on time: 22ns
Turn-off time: 317ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
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AIHD04N60RFATMA1 AIHD04N60RFATMA1 INFINEON TECHNOLOGIES AIHD04N60RF.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
Turn-on time: 19ns
Turn-off time: 153ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
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IPC90N04S5-3R6 IPC90N04S5-3R6 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 63W
Technology: OptiMOS™ 5
Gate charge: 32.6nC
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IPC90N04S5L-3R3 IPC90N04S5L-3R3 INFINEON TECHNOLOGIES Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 62W
Technology: OptiMOS™ 5
Gate charge: 40nC
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IPB90N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: D2PAK; TO263AB
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 150W
Application: automotive industry
Gate charge: 118nC
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IPD90N04S304ATMA1 IPD90N04S304ATMA1 INFINEON TECHNOLOGIES IPD90N04S304.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 136W
Technology: OptiMOS™ T
Gate charge: 60nC
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IPB90N04S402ATMA1 INFINEON TECHNOLOGIES Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 90A; 150W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Case: D2PAK; TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 150W
Application: automotive industry
Technology: MOSFET
Gate charge: 118nC
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
1000+89.41 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
BSC0902NSIATMA1 BSC0902NSIATMA1 INFINEON TECHNOLOGIES BSC0902NSI-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
на замовлення 4437 шт:
термін постачання 14-30 дні (днів)
8+61.41 грн
10+46.46 грн
11+41.60 грн
50+40.34 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSC0909NSATMA1 BSC0909NSATMA1 INFINEON TECHNOLOGIES BSC0909NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
на замовлення 82 шт:
термін постачання 14-30 дні (днів)
8+57.80 грн
11+39.08 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSC030P03NS3GAUMA1 BSC030P03NS3GAUMA1 INFINEON TECHNOLOGIES BSC030P03NS3GAUMA1-DTE.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
на замовлення 1025 шт:
термін постачання 14-30 дні (днів)
3+173.41 грн
5+130.83 грн
10+114.06 грн
25+94.77 грн
50+83.03 грн
100+72.96 грн
250+64.58 грн
500+58.71 грн
1000+57.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC035N10NS5ATMA1 BSC035N10NS5ATMA1 INFINEON TECHNOLOGIES BSC035N10NS5-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
на замовлення 3769 шт:
термін постачання 14-30 дні (днів)
4+139.09 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC028N06NSATMA1 BSC028N06NSATMA1 INFINEON TECHNOLOGIES BSC028N06NS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 1861 шт:
термін постачання 14-30 дні (днів)
3+202.31 грн
10+140.89 грн
50+101.48 грн
100+88.90 грн
250+82.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC093N04LSGATMA1 BSC093N04LSGATMA1 INFINEON TECHNOLOGIES BSC093N04LSG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 35W
Case: PG-TDSON-8
On-state resistance: 9.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
на замовлення 3101 шт:
термін постачання 14-30 дні (днів)
8+62.32 грн
11+41.60 грн
50+29.86 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSC0502NSIATMA1 INFINEON TECHNOLOGIES Infineon-BSC0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe055d2f662a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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ISZ065N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISZ065N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8cb687b0994 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; PG-TDSON-8 FL
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TDSON-8 FL
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 8.6mΩ
Drain-source voltage: 30V
Drain current: 40A
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ISZ019N03L5SATMA1 INFINEON TECHNOLOGIES Infineon-ISZ019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c249de0991 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TDSON-8
Polarisation: unipolar
Gate charge: 44nC
On-state resistance: 1.9mΩ
Drain-source voltage: 30V
Drain current: 40A
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BSZ065N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ065N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e55f60164817 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TDSON-8
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
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BSZ040N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ040N06LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e53aa56447aa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 69W; PG-TDSON-8
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 6.6nC
On-state resistance: 4.4mΩ
Drain current: 40A
Power dissipation: 69W
Drain-source voltage: 60V
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BSZ033NE2LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ033NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f1820c4931820 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 18A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 18A
Power dissipation: 30W
Case: PG-TDSON-8
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 18.3nC
Kind of channel: enhancement
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BSZ070N08LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSZ070N08LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e60d9bc9507d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 14.1nC
Kind of channel: enhancement
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ISC230N10NM6ATMA1 INFINEON TECHNOLOGIES Infineon-ISC230N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba4e6aba024a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 48W
Case: PG-TDSON-8
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of channel: enhancement
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BSC065N06LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC065N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5a9ad087b39 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
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ISC011N06LM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC011N06LM5-DataSheet-v02_01-EN.pdf?fileId=5546d4627956d53f01795f5741e469ea Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 288A; 188W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 288A
Power dissipation: 188W
Case: PG-TDSON-8
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 63nC
Kind of channel: enhancement
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ISC0805NLSATMA1 INFINEON TECHNOLOGIES Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 71A
Power dissipation: 74W
Case: PG-TDSON-8
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC034N10LS5ATMA1 INFINEON TECHNOLOGIES Infineon-BSC034N10LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626b2d8e69016b4c46675313e7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
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IPW60R099CPFKSA1 IPW60R099CP.pdf
IPW60R099CPFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 26 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+468.74 грн
5+418.49 грн
В кошику  од. на суму  грн.
IPP60R099CPXKSA1 IPP60R099CP-DTE.pdf
IPP60R099CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO220-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO220-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 138 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+438.94 грн
10+293.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R099C6XKSA1 IPP60R099C6-DTE.pdf
IPP60R099C6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+330.56 грн
10+250.76 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPP60R099P7 IPP60R099P7.pdf
IPP60R099P7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 138 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+338.69 грн
3+282.62 грн
10+267.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPW60R099CPAFKSA1 Infineon-IPW60R099CPA-DS-v02_00-en.pdf?fileId=db3a304328c6bd5c0128ee4b902f59fe
IPW60R099CPAFKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: TO247-3
On-state resistance: 90mΩ
Mounting: THT
Kind of channel: enhancement
Gate charge: 80nC
Application: automotive industry
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+536.48 грн
2+469.64 грн
5+412.62 грн
10+375.71 грн
В кошику  од. на суму  грн.
IPB60R099CPATMA1 IPB60R099CP-DTE.pdf
IPB60R099CPATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO263-3-2
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO263-3-2
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of channel: enhancement
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IPW60R099C6FKSA1 IPW60R099C6-DTE.pdf
IPW60R099C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB60R099C7ATMA1 IPB60R099C7.pdf
IPB60R099C7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
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IPB60R099P7ATMA1 IPB60R099P7.pdf
IPB60R099P7ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; D2PAK
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel
Kind of channel: enhancement
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IPW60R099C7XKSA1 IPW60R099C7-DTE.pdf
IPW60R099C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPB60R099C6 IPB60R099C6.pdf
IPB60R099C6
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB60R099C6ATMA1 IPB60R099C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e012394d25bd3069e
IPB60R099C6ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB60R099CPAATMA1 Infineon-IPB60R099CPA-DS-v02_01-en.pdf?folderId=db3a30431a5c32f2011a8084a04a6500&fileId=db3a304328c6bd5c0128ee28d90159e0&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: D2PAK; TO263
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 80nC
Kind of channel: enhancement
Application: automotive industry
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IPI60R099CPXKSA1 IPI60R099CP-DTE.pdf
IPI60R099CPXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 31A; 255W; PG-TO262-3-1
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 31A
Power dissipation: 255W
Case: PG-TO262-3-1
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of channel: enhancement
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IPP60R099C7XKSA1 IPP60R099C7-DTE.pdf
IPP60R099C7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; 110W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 110W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPP60R099P6XKSA1 IPP60R099P6-DTE.pdf
IPP60R099P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 37.9A
Power dissipation: 278W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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IPZA60R099P7XKSA1 IPZA60R099P7.pdf
IPZA60R099P7XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 117W
Case: PG-TO247-4
Gate-source voltage: ±30V
On-state resistance: 99mΩ
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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IPA040N06NXKSA1 IPA040N06N-DTE.pdf
IPA040N06NXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 69A; 36W; TO220FP
Mounting: THT
Case: TO220FP
Kind of channel: enhancement
Technology: OptiMOS™
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 4mΩ
Power dissipation: 36W
Gate-source voltage: ±20V
Drain current: 69A
Drain-source voltage: 60V
Kind of package: tube
на замовлення 86 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+177.92 грн
50+82.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPW60R070CFD7 IPW60R070CFD7.pdf
IPW60R070CFD7
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 156W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 156W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.129Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 67nC
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IPW60R070P6XKSA1 IPW60R070P6-DTE.pdf
IPW60R070P6XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53.5A; 391W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53.5A
Power dissipation: 391W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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HFA15TB60PBF HFA15TB60PBF.pdf
HFA15TB60PBF
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; Ufmax: 1.7V; 74ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 15A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220AC
Max. forward voltage: 1.7V
Reverse recovery time: 74ns
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IRFR7440TRPBF irfr7440pbf.pdf?fileId=5546d462533600a4015356359e662117
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 125A; Idm: 760A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 125A
Pulsed drain current: 760A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Kind of channel: enhancement
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IPB100N06S205ATMA4 IPB100N06S205.pdf
IPB100N06S205ATMA4
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.7mΩ
Mounting: SMD
Gate charge: 130nC
Kind of channel: enhancement
Technology: OptiMOS™
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BSZ100N06LS3GATMA1 BSZ100N06LS3G-DTE.pdf
BSZ100N06LS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; 50W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 50W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
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BSZ100N06NSATMA1 BSZ100N06NS-DTE.pdf
BSZ100N06NSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 36W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 36W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
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IPB100N06S2L05ATMA2 IPB100N06S2L05.pdf
IPB100N06S2L05ATMA2
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 100A; 300W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 170nC
Kind of channel: enhancement
Technology: OptiMOS™
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IPP100N06S2L05AKSA2 Infineon-IPP_B100N06S2L_05-DS-v01_00-en.pdf?fileId=db3a304412b407950112b4322a685747&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; 55V; 100A; 300W; TO220-3
Type of transistor: N-MOSFET
Drain-source voltage: 55V
Drain current: 100A
Power dissipation: 300W
Case: TO220-3
Gate-source voltage: 20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 230nC
Kind of channel: enhancement
Application: automotive industry
Technology: MOSFET
на замовлення 750 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+211.34 грн
200+176.96 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
FM25VN10-G Infineon-FM25V10_1-Mbit_(128_K_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe03d63127&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25VN10-G
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; SPI; 128kx8bit; 2÷3.6VDC; 40MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 1Mb FRAM
Interface: SPI
Memory organisation: 128kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 40MHz
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
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FM25V20A-DGQTR FM25V20A-DGQ-DTE.pdf
FM25V20A-DGQTR
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2...3.6V DC
Memory: 2Mb FRAM
Memory organisation: 256kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
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FM25V20A-DGTR FM25V20A-DG-DTE.pdf
FM25V20A-DGTR
Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 2MbFRAM; SPI; 256kx8bit; 2÷3.6VDC; 40MHz; DFN8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Interface: SPI
Supply voltage: 2...3.6V DC
Memory: 2Mb FRAM
Memory organisation: 256kx8bit
Clock frequency: 40MHz
Case: DFN8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
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TD160N18SOF TT160N18SOF_TD160N18SOF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 160A; BG-PB34SB-1; Ufmax: 1.82V
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Max. load current: 160A
Mechanical mounting: screw
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TT160N18SOF TT160N18SOF_TD160N18SOF.pdf
Виробник: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 160A; BG-PB34SB-1; screw
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 160A
Case: BG-PB34SB-1
Max. forward voltage: 1.82V
Max. forward impulse current: 5.2kA
Gate current: 145mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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IPT010N08NM5ATMA1 Infineon-IPT010N08NM5-DataSheet-v02_00-EN.pdf?fileId=5546d462766cbe860176761d659d581e
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 425A; 375W; HSOF-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 425A
Power dissipation: 375W
Case: HSOF-8
On-state resistance: 1.05mΩ
Mounting: SMD
Gate charge: 178nC
Kind of channel: enhancement
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IDWD30G120C5XKSA1 infineon-idwd30g120c5-datasheet-en.pdf
IDWD30G120C5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; 332W
Mounting: THT
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.65V
Load current: 30A
Max. forward impulse current: 0.24kA
Power dissipation: 332W
Max. off-state voltage: 1.2kV
Technology: CoolSiC™ 5G; SiC
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IPW60R041C6FKSA1 IPW60R041C6-DTE.pdf
IPW60R041C6FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 77.5A; 481W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 77.5A
Power dissipation: 481W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+852.58 грн
5+683.50 грн
В кошику  од. на суму  грн.
AIHD04N60RATMA1 AIHD04N60R.pdf
AIHD04N60RATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
Turn-on time: 22ns
Turn-off time: 317ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
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AIHD04N60RFATMA1 AIHD04N60RF.pdf
AIHD04N60RFATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; 600V; 4A; 75W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 75W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Collector-emitter voltage: 600V
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Gate charge: 27nC
Turn-on time: 19ns
Turn-off time: 153ns
Collector current: 4A
Pulsed collector current: 12A
Gate-emitter voltage: ±20V
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IPC90N04S5-3R6
IPC90N04S5-3R6
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 63W
Technology: OptiMOS™ 5
Gate charge: 32.6nC
товару немає в наявності
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IPC90N04S5L-3R3
IPC90N04S5L-3R3
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 62W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TDSON-8
Gate-source voltage: ±16V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 62W
Technology: OptiMOS™ 5
Gate charge: 40nC
товару немає в наявності
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IPB90N04S402ATMA1 Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; 150W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: D2PAK; TO263AB
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 150W
Application: automotive industry
Gate charge: 118nC
товару немає в наявності
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IPD90N04S304ATMA1 IPD90N04S304.pdf
IPD90N04S304ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; OptiMOS™ T; unipolar; 40V; 90A; 136W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 136W
Technology: OptiMOS™ T
Gate charge: 60nC
товару немає в наявності
В кошику  од. на суму  грн.
IPB90N04S402ATMA1 Infineon-IPP_B_I90N04S4_02-DS-v01_01-en.pdf?folderId=db3a304412b407950112b42b75b74520&fileId=db3a304328c6bd5c01291c7efe515e2f&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 40V; 90A; 150W; D2PAK,TO263AB
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Case: D2PAK; TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Drain current: 90A
Power dissipation: 150W
Application: automotive industry
Technology: MOSFET
Gate charge: 118nC
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1000+89.41 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
BSC0902NSIATMA1 BSC0902NSI-DTE.pdf
BSC0902NSIATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
на замовлення 4437 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+61.41 грн
10+46.46 грн
11+41.60 грн
50+40.34 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSC0909NSATMA1 BSC0909NS-DTE.pdf
BSC0909NSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 34V; 44A; 27W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 34V
Drain current: 44A
Power dissipation: 27W
Case: PG-TDSON-8
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™
Gate-source voltage: ±20V
на замовлення 82 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+57.80 грн
11+39.08 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSC030P03NS3GAUMA1 BSC030P03NS3GAUMA1-DTE.pdf
BSC030P03NS3GAUMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -100A; 125W; PG-TDSON-8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -100A
Power dissipation: 125W
Case: PG-TDSON-8
Gate-source voltage: ±25V
On-state resistance: 3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ P3
на замовлення 1025 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+173.41 грн
5+130.83 грн
10+114.06 грн
25+94.77 грн
50+83.03 грн
100+72.96 грн
250+64.58 грн
500+58.71 грн
1000+57.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC035N10NS5ATMA1 BSC035N10NS5-DTE.pdf
BSC035N10NS5ATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 3.5mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
на замовлення 3769 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+139.09 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSC028N06NSATMA1 BSC028N06NS-DTE.pdf
BSC028N06NSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 83W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 83W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
на замовлення 1861 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+202.31 грн
10+140.89 грн
50+101.48 грн
100+88.90 грн
250+82.19 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BSC093N04LSGATMA1 BSC093N04LSG-DTE.pdf
BSC093N04LSGATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 35W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 35W
Case: PG-TDSON-8
On-state resistance: 9.3mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Gate-source voltage: ±20V
на замовлення 3101 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
8+62.32 грн
11+41.60 грн
50+29.86 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
BSC0502NSIATMA1 Infineon-BSC0502NSI-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014efe055d2f662a
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: PG-TDSON-8
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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ISZ065N03L5SATMA1 Infineon-ISZ065N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8cb687b0994
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; PG-TDSON-8 FL
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TDSON-8 FL
Polarisation: unipolar
Gate charge: 10nC
On-state resistance: 8.6mΩ
Drain-source voltage: 30V
Drain current: 40A
товару немає в наявності
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ISZ019N03L5SATMA1 Infineon-ISZ019N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8c249de0991
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: PG-TDSON-8
Polarisation: unipolar
Gate charge: 44nC
On-state resistance: 1.9mΩ
Drain-source voltage: 30V
Drain current: 40A
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BSZ065N06LS5ATMA1 Infineon-BSZ065N06LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e55f60164817
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Power dissipation: 46W
Case: PG-TDSON-8
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
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BSZ040N06LS5ATMA1 Infineon-BSZ040N06LS5-DS-v02_01-EN.pdf?fileId=5546d4625696ed760156e53aa56447aa
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; 69W; PG-TDSON-8
Case: PG-TDSON-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 6.6nC
On-state resistance: 4.4mΩ
Drain current: 40A
Power dissipation: 69W
Drain-source voltage: 60V
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BSZ033NE2LS5ATMA1 Infineon-BSZ033NE2LS5-DS-v02_00-EN.pdf?fileId=5546d4624eeb2bc7014f1820c4931820
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 18A; 30W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 18A
Power dissipation: 30W
Case: PG-TDSON-8
On-state resistance: 2.7mΩ
Mounting: SMD
Gate charge: 18.3nC
Kind of channel: enhancement
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BSZ070N08LS5ATMA1 Infineon-BSZ070N08LS5-DS-v02_02-EN.pdf?fileId=5546d4625696ed760156e60d9bc9507d
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 40A; 69W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 40A
Power dissipation: 69W
Case: PG-TDSON-8
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 14.1nC
Kind of channel: enhancement
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ISC230N10NM6ATMA1 Infineon-ISC230N10NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bba4e6aba024a
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 31A
Power dissipation: 48W
Case: PG-TDSON-8
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 7.4nC
Kind of channel: enhancement
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BSC065N06LS5ATMA1 Infineon-BSC065N06LS5-DS-v02_00-EN.pdf?fileId=5546d4625c54d85b015cc5a9ad087b39
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; 46W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Power dissipation: 46W
Case: PG-TDSON-8
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 13nC
Kind of channel: enhancement
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ISC011N06LM5ATMA1 Infineon-ISC011N06LM5-DataSheet-v02_01-EN.pdf?fileId=5546d4627956d53f01795f5741e469ea
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 288A; 188W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 288A
Power dissipation: 188W
Case: PG-TDSON-8
On-state resistance: 1.15mΩ
Mounting: SMD
Gate charge: 63nC
Kind of channel: enhancement
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ISC0805NLSATMA1 Infineon-ISC0805NLS-DataSheet-v02_01-EN.pdf?fileId=5546d46278d64ffd0178fd5077b86d89
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 74W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 71A
Power dissipation: 74W
Case: PG-TDSON-8
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
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BSC034N10LS5ATMA1 Infineon-BSC034N10LS5-DataSheet-v02_01-EN.pdf?fileId=5546d4626b2d8e69016b4c46675313e7
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 156W; PG-TDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 156W
Case: PG-TDSON-8
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 46nC
Kind of channel: enhancement
товару немає в наявності
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