Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (121549) > Сторінка 2015 з 2026
| Фото | Назва | Виробник | Інформація |
Доступність |
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BSO220N03MDGXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8 Mounting: SMD Kind of channel: enhancement Technology: OptiMOS™ 3 Type of transistor: N-MOSFET Case: PG-DSO-8 Polarisation: unipolar On-state resistance: 22mΩ Power dissipation: 1.56W Drain current: 7.7A Gate-source voltage: ±20V Drain-source voltage: 30V |
на замовлення 2440 шт: термін постачання 14-30 дні (днів) |
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| CY8C4248LQI-BL583 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: PSoC microcontroller; 48MHz; QFN36; 32kBSRAM,256kBFLASH Type of integrated circuit: PSoC microcontroller Mounting: SMD Case: QFN36 Operating temperature: -40...85°C Memory: 32kB SRAM; 256kB FLASH Bluetooth version: 4.2 Clock frequency: 48MHz Kind of core: 32-bit Interface: I2C; SPI; UART Integrated circuit features: watchdog Supply voltage: 1.9...5.5V DC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SPP18P06PHXKSA1 | INFINEON TECHNOLOGIES |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3 Case: PG-TO220-3 Type of transistor: P-MOSFET Technology: SIPMOS™ Mounting: THT Kind of package: tube Polarisation: unipolar Drain-source voltage: -60V Drain current: -18.7A On-state resistance: 0.13Ω Gate-source voltage: ±20V Power dissipation: 81.1W Kind of channel: enhancement |
на замовлення 558 шт: термін постачання 14-30 дні (днів) |
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| S25FL064LABBHV030 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: QUAD SPI Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating frequency: 108MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| S26KS512SDABHV030 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 512Mb FLASH Interface: HyperBus Operating frequency: 100MHz Operating voltage: 1.7...1.95V Case: FBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| S28HL01GTFPBHV030 | INFINEON TECHNOLOGIES |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 1GbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 1Gb FLASH Interface: octal Operating voltage: 2.7...3.6V Case: BGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray Operating frequency: 166MHz |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| S29GL064S80BHV030 | INFINEON TECHNOLOGIES |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; FBGA48; parallel Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 64Mb FLASH Interface: CFI; parallel Operating voltage: 2.7...3.6V Access time: 80ns Case: FBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IRF7815TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 5.1A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BFR380L3E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 15V Collector current: 80mA Power dissipation: 0.38W Case: TSLP-3-1 Mounting: SMD Kind of package: reel; tape Frequency: 14GHz |
на замовлення 11825 шт: термін постачання 14-30 дні (днів) |
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BFR193L3E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1 Type of transistor: NPN Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 20V Collector current: 80mA Power dissipation: 0.58W Case: TSLP-3-1 Mounting: SMD Kind of package: reel; tape Frequency: 8GHz |
на замовлення 751 шт: термін постачання 14-30 дні (днів) |
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| BTS500851TMBAKSA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 38A; Ch: 1; N-Channel; THT Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 38A Number of channels: 1 Kind of output: N-Channel Mounting: THT Case: PG-TO220-7-11 On-state resistance: 7.2mΩ Supply voltage: 5...58V DC Technology: High Current PROFET |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BSR316PH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -100V Drain current: -290mA Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±20V On-state resistance: 2.2Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| IPB65R110CFDAATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 31.2A Power dissipation: 277.8W Case: D2PAK; TO263 On-state resistance: 99mΩ Mounting: SMD Kind of channel: enhancement Gate charge: 118nC Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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IPB65R110CFDATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 31.2A Power dissipation: 277.8W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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XC8888FFI5VACFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollersDescription: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: SPI; UART x2 Supply voltage: 3...5V DC Case: PG-LQFP-64 Mounting: SMD Number of 16bit timers: 4 Number of PWM channels: 4 Memory: 1.75kB SRAM; 32kB FLASH Operating temperature: -40...85°C Integrated circuit features: watchdog Number of 10bit A/D converters: 8 Number of output compare channels: 1 Number of input capture channels: 1 Kind of core: 8-bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BTS70041EPPXUMA1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 15A; Ch: 1; N-Channel; SMD; SO14-W Mounting: SMD Operating temperature: -40...150°C Kind of output: N-Channel Type of integrated circuit: power switch Turn-off time: 220µs Turn-on time: 210µs On-state resistance: 8mΩ Number of channels: 1 Output current: 15A Supply voltage: 4.1...28V DC Technology: PROFET™+ 12V Case: SO14-W Kind of integrated circuit: high-side |
на замовлення 2845 шт: термін постачання 14-30 дні (днів) |
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BTS5090-1EJA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8 Mounting: SMD Kind of output: N-Channel Type of integrated circuit: power switch On-state resistance: 90mΩ Number of channels: 1 Output current: 3A Supply voltage: 13.5V DC Technology: PROFET™+ 12V Case: DSO8 Kind of integrated circuit: high-side |
на замовлення 1775 шт: термін постачання 14-30 дні (днів) |
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BTS3050EJ | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP Mounting: SMD Operating temperature: -40...150°C Kind of output: N-Channel Type of integrated circuit: power switch Turn-off time: 210µs Turn-on time: 115µs On-state resistance: 0.1Ω Number of channels: 1 Output current: 4A Output voltage: 40V Technology: HITFET® Case: SO8-EP Kind of integrated circuit: low-side |
на замовлення 2795 шт: термін постачання 14-30 дні (днів) |
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BTS5012SDA | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5 Mounting: SMD Kind of output: N-Channel Type of integrated circuit: power switch On-state resistance: 12mΩ Number of channels: 1 Output current: 6A Supply voltage: 5.5...20V DC Technology: High Current PROFET Case: TO252-5 Kind of integrated circuit: high-side |
на замовлення 990 шт: термін постачання 14-30 дні (днів) |
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BTS3035TF | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3 Mounting: SMD Operating temperature: -40...150°C Kind of output: N-Channel Type of integrated circuit: power switch Turn-off time: 210µs Turn-on time: 115µs On-state resistance: 70mΩ Number of channels: 1 Output current: 5A Output voltage: 40V Technology: HITFET® Case: PG-TO252-3 Kind of integrated circuit: low-side |
на замовлення 1071 шт: термін постачання 14-30 дні (днів) |
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BTS3035EJ | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuitsDescription: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP Mounting: SMD Operating temperature: -40...150°C Kind of output: N-Channel Type of integrated circuit: power switch Turn-off time: 210µs Turn-on time: 115µs On-state resistance: 70mΩ Number of channels: 1 Output current: 5A Output voltage: 40V Technology: HITFET® Case: SO8-EP Kind of integrated circuit: low-side |
на замовлення 2995 шт: термін постачання 14-30 дні (днів) |
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BSC010N04LSATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BSC010N04LSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 100A Power dissipation: 139W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 1mΩ Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BCR320UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; single transistor; current regulator,LED driver Case: SC74 Mounting: SMD Operating voltage: 0...25V DC Output current: 0.25A Kind of integrated circuit: current regulator; LED driver Type of integrated circuit: driver Number of channels: 1 Topology: single transistor |
на замовлення 759 шт: термін постачання 14-30 дні (днів) |
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| BCR321UE6327HTSA1 | INFINEON TECHNOLOGIES |
Category: LED driversDescription: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 0.25A Number of channels: 1 Mounting: SMD Operating voltage: 0...4.5V DC Topology: single transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SN7002NH6327XTSA2 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IPW60R031CFD7 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Power dissipation: 278W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: THT Gate charge: 141nC Kind of package: tube Kind of channel: enhancement |
на замовлення 13 шт: термін постачання 14-30 дні (днів) |
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IPW60R037P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 600V Drain current: 48A Power dissipation: 255W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 37mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhancement Version: ESD |
на замовлення 158 шт: термін постачання 14-30 дні (днів) |
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| IPW60R037CSFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 25A Power dissipation: 245W Case: TO247-3 On-state resistance: 37mΩ Mounting: THT Gate charge: 136nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BCV46E6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD Darlington transistorsDescription: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23 Type of transistor: PNP Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.36W Case: SOT23 Mounting: SMD Frequency: 200MHz |
на замовлення 8720 шт: термін постачання 14-30 дні (днів) |
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BCR112E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 140MHz Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 4.7kΩ |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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BCV61BE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143 Mounting: SMD Case: SOT143 Collector current: 0.1A Power dissipation: 0.3W Type of transistor: NPN x2 Collector-emitter voltage: 30V Polarisation: bipolar Frequency: 250MHz |
на замовлення 928 шт: термін постачання 14-30 дні (днів) |
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BCR505E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
на замовлення 5972 шт: термін постачання 14-30 дні (днів) |
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BCR135E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 150MHz Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
на замовлення 372 шт: термін постачання 14-30 дні (днів) |
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BCR185E6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 200MHz Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
на замовлення 1615 шт: термін постачання 14-30 дні (днів) |
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BCX71KE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 11042 шт: термін постачання 14-30 дні (днів) |
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BCR148E6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 100MHz Kind of transistor: BRT Base resistor: 47kΩ Base-emitter resistor: 47kΩ |
на замовлення 135 шт: термін постачання 14-30 дні (днів) |
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BCR533E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz Kind of transistor: BRT Base resistor: 10kΩ Base-emitter resistor: 10kΩ |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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BCR158E6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SOT23 Mounting: SMD Frequency: 200MHz Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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BCX70HE6327 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 1050 шт: термін постачання 14-30 дні (днів) |
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BCX71HE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 2380 шт: термін постачання 14-30 дні (днів) |
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BCR503E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 100MHz Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
на замовлення 3310 шт: термін постачання 14-30 дні (днів) |
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BC847SH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistorsDescription: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.25W Case: SOT363 Mounting: SMD Frequency: 250MHz |
на замовлення 1281 шт: термін постачання 14-30 дні (днів) |
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BCX71GE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 250MHz |
на замовлення 2720 шт: термін постачання 14-30 дні (днів) |
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BCW67CE6327 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 32V Collector current: 0.8A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 200MHz |
на замовлення 48 шт: термін постачання 14-30 дні (днів) |
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BCR555E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.5A Power dissipation: 0.33W Case: SOT23 Mounting: SMD Frequency: 150MHz Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ |
на замовлення 2500 шт: термін постачання 14-30 дні (днів) |
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FM24VN10-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Mounting: SMD Operating temperature: -40...85°C Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Interface: I2C Kind of interface: serial Supply voltage: 2...3.6V DC Memory: 1Mb FRAM Clock frequency: 3.4MHz Memory organisation: 128kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FM24V01A-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Interface: I2C Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 128kb FRAM Clock frequency: 3.4MHz Memory organisation: 16kx8bit Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FM24V01A-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Interface: I2C Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 128kb FRAM Clock frequency: 3.4MHz Memory organisation: 16kx8bit Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FM24V05-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Type of integrated circuit: FRAM memory Kind of memory: FRAM Memory: 512kb FRAM Interface: I2C Memory organisation: 64kx8bit Supply voltage: 2...3.6V DC Clock frequency: 3.4MHz Case: SO8 Mounting: SMD Kind of interface: serial Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FM24V02A-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Interface: I2C Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 256kb FRAM Clock frequency: 3.4MHz Memory organisation: 32kx8bit Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FM24V05-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Mounting: SMD Operating temperature: -40...85°C Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Interface: I2C Kind of interface: serial Supply voltage: 2...3.6V DC Memory: 512kb FRAM Clock frequency: 3.4MHz Memory organisation: 64kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FM24V02A-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Interface: I2C Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 256kb FRAM Clock frequency: 3.4MHz Memory organisation: 32kx8bit Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Kind of interface: serial |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FM24VN10-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8 Mounting: SMD Kind of memory: FRAM Type of integrated circuit: FRAM memory Interface: I2C Kind of interface: serial Case: SO8 Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 1Mb FRAM Clock frequency: 3.4MHz Memory organisation: 128kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FM24W256-G | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO8 Mounting: SMD Operating temperature: -40...85°C Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Interface: I2C Kind of interface: serial Supply voltage: 2.7...5.5V DC Memory: 256kb FRAM Clock frequency: 1MHz Memory organisation: 32kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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FM24W256-GTR | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO8 Mounting: SMD Operating temperature: -40...85°C Case: SO8 Kind of memory: FRAM Type of integrated circuit: FRAM memory Interface: I2C Kind of interface: serial Supply voltage: 2.7...5.5V DC Memory: 256kb FRAM Clock frequency: 1MHz Memory organisation: 32kx8bit |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAT165E6327HTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A Type of diode: Schottky rectifying Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 0.75A Semiconductor structure: single diode Max. forward voltage: 0.74V |
на замовлення 2894 шт: термін постачання 14-30 дні (днів) |
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| IPA65R400CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 15.1A; 31W; TO220FP Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 39nC On-state resistance: 0.36Ω Drain current: 15.1A Power dissipation: 31W Drain-source voltage: 650V Case: TO220FP Kind of channel: enhancement |
на замовлення 92 шт: термін постачання 14-30 дні (днів) |
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| CY15B128J-SXA | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8 Type of integrated circuit: FRAM memory Case: SOIC8 Mounting: SMD Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 128kb FRAM Clock frequency: 3.4MHz Memory organisation: 16kx8bit Kind of memory: FRAM Interface: I2C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| CY15B128J-SXAT | INFINEON TECHNOLOGIES |
Category: FRAM memories - integrated circuitsDescription: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8 Type of integrated circuit: FRAM memory Case: SOIC8 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Supply voltage: 2...3.6V DC Memory: 128kb FRAM Clock frequency: 3.4MHz Memory organisation: 16kx8bit Kind of memory: FRAM Interface: I2C |
товару немає в наявності |
В кошику од. на суму грн. |
| BSO220N03MDGXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-DSO-8
Polarisation: unipolar
On-state resistance: 22mΩ
Power dissipation: 1.56W
Drain current: 7.7A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.7A; 1.56W; PG-DSO-8
Mounting: SMD
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-DSO-8
Polarisation: unipolar
On-state resistance: 22mΩ
Power dissipation: 1.56W
Drain current: 7.7A
Gate-source voltage: ±20V
Drain-source voltage: 30V
на замовлення 2440 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 69.54 грн |
| 8+ | 52.67 грн |
| 10+ | 44.87 грн |
| 25+ | 35.06 грн |
| 50+ | 29.35 грн |
| 100+ | 25.33 грн |
| 250+ | 23.57 грн |
| CY8C4248LQI-BL583 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN36; 32kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: QFN36
Operating temperature: -40...85°C
Memory: 32kB SRAM; 256kB FLASH
Bluetooth version: 4.2
Clock frequency: 48MHz
Kind of core: 32-bit
Interface: I2C; SPI; UART
Integrated circuit features: watchdog
Supply voltage: 1.9...5.5V DC
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 48MHz; QFN36; 32kBSRAM,256kBFLASH
Type of integrated circuit: PSoC microcontroller
Mounting: SMD
Case: QFN36
Operating temperature: -40...85°C
Memory: 32kB SRAM; 256kB FLASH
Bluetooth version: 4.2
Clock frequency: 48MHz
Kind of core: 32-bit
Interface: I2C; SPI; UART
Integrated circuit features: watchdog
Supply voltage: 1.9...5.5V DC
товару немає в наявності
В кошику
од. на суму грн.
| SPP18P06PHXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Case: PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
On-state resistance: 0.13Ω
Gate-source voltage: ±20V
Power dissipation: 81.1W
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -18.7A; 81.1W; PG-TO220-3
Case: PG-TO220-3
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -18.7A
On-state resistance: 0.13Ω
Gate-source voltage: ±20V
Power dissipation: 81.1W
Kind of channel: enhancement
на замовлення 558 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 136.38 грн |
| 5+ | 95.61 грн |
| 10+ | 85.54 грн |
| 25+ | 73.80 грн |
| 50+ | 66.25 грн |
| 100+ | 59.54 грн |
| 500+ | 48.64 грн |
| S25FL064LABBHV030 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating frequency: 108MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 64MbFLASH; QUAD SPI; 108MHz; 2.7÷3.6V; BGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: QUAD SPI
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating frequency: 108MHz
товару немає в наявності
В кошику
од. на суму грн.
| S26KS512SDABHV030 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 100MHz
Operating voltage: 1.7...1.95V
Case: FBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512MbFLASH; HyperBus; 100MHz; 1.7÷1.95V; FBGA24
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 512Mb FLASH
Interface: HyperBus
Operating frequency: 100MHz
Operating voltage: 1.7...1.95V
Case: FBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
товару немає в наявності
В кошику
од. на суму грн.
| S28HL01GTFPBHV030 |
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Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: octal
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating frequency: 166MHz
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 1GbFLASH; octal; 166MHz; 2.7÷3.6V; BGA24; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 1Gb FLASH
Interface: octal
Operating voltage: 2.7...3.6V
Case: BGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Operating frequency: 166MHz
товару немає в наявності
В кошику
од. на суму грн.
| S29GL064S80BHV030 |
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Виробник: INFINEON TECHNOLOGIES
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 64MbFLASH; CFI,parallel; 80ns; FBGA48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 64Mb FLASH
Interface: CFI; parallel
Operating voltage: 2.7...3.6V
Access time: 80ns
Case: FBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray
товару немає в наявності
В кошику
од. на суму грн.
| IRF7815TRPBF |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5.1A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 5.1A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 5.1A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BFR380L3E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 80mA
Power dissipation: 0.38W
Case: TSLP-3-1
Mounting: SMD
Kind of package: reel; tape
Frequency: 14GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 15V; 80mA; 0.38W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 15V
Collector current: 80mA
Power dissipation: 0.38W
Case: TSLP-3-1
Mounting: SMD
Kind of package: reel; tape
Frequency: 14GHz
на замовлення 11825 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.42 грн |
| 97+ | 4.36 грн |
| 101+ | 4.16 грн |
| 500+ | 3.96 грн |
| 1000+ | 3.82 грн |
| 2500+ | 3.64 грн |
| BFR193L3E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSLP-3-1
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; RF; 20V; 80mA; 0.58W; TSLP-3-1
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 20V
Collector current: 80mA
Power dissipation: 0.58W
Case: TSLP-3-1
Mounting: SMD
Kind of package: reel; tape
Frequency: 8GHz
на замовлення 751 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.58 грн |
| 33+ | 12.92 грн |
| BTS500851TMBAKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 38A; Ch: 1; N-Channel; THT
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 38A
Number of channels: 1
Kind of output: N-Channel
Mounting: THT
Case: PG-TO220-7-11
On-state resistance: 7.2mΩ
Supply voltage: 5...58V DC
Technology: High Current PROFET
товару немає в наявності
В кошику
од. на суму грн.
| BSR316PH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -290mA
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -0.29A; 0.5W; SC59
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -290mA
Power dissipation: 0.5W
Case: SC59
Gate-source voltage: ±20V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IPB65R110CFDAATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: D2PAK; TO263
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 118nC
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: D2PAK; TO263
On-state resistance: 99mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 118nC
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.
| IPB65R110CFDATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 277.8W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| XC8888FFI5VACFXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: SPI,UART x2; 3÷5VDC
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: SPI; UART x2
Supply voltage: 3...5V DC
Case: PG-LQFP-64
Mounting: SMD
Number of 16bit timers: 4
Number of PWM channels: 4
Memory: 1.75kB SRAM; 32kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: watchdog
Number of 10bit A/D converters: 8
Number of output compare channels: 1
Number of input capture channels: 1
Kind of core: 8-bit
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| BTS70041EPPXUMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 15A; Ch: 1; N-Channel; SMD; SO14-W
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 220µs
Turn-on time: 210µs
On-state resistance: 8mΩ
Number of channels: 1
Output current: 15A
Supply voltage: 4.1...28V DC
Technology: PROFET™+ 12V
Case: SO14-W
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 15A; Ch: 1; N-Channel; SMD; SO14-W
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 220µs
Turn-on time: 210µs
On-state resistance: 8mΩ
Number of channels: 1
Output current: 15A
Supply voltage: 4.1...28V DC
Technology: PROFET™+ 12V
Case: SO14-W
Kind of integrated circuit: high-side
на замовлення 2845 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 158.96 грн |
| 10+ | 108.19 грн |
| 25+ | 100.64 грн |
| 50+ | 95.61 грн |
| BTS5090-1EJA |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 90mΩ
Number of channels: 1
Output current: 3A
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
Case: DSO8
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; DSO8
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 90mΩ
Number of channels: 1
Output current: 3A
Supply voltage: 13.5V DC
Technology: PROFET™+ 12V
Case: DSO8
Kind of integrated circuit: high-side
на замовлення 1775 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 174.31 грн |
| 10+ | 104.83 грн |
| 25+ | 93.09 грн |
| 100+ | 77.99 грн |
| 250+ | 70.45 грн |
| 500+ | 64.58 грн |
| 1000+ | 62.90 грн |
| BTS3050EJ |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 210µs
Turn-on time: 115µs
On-state resistance: 0.1Ω
Number of channels: 1
Output current: 4A
Output voltage: 40V
Technology: HITFET®
Case: SO8-EP
Kind of integrated circuit: low-side
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 4A; Ch: 1; N-Channel; SMD; SO8-EP
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 210µs
Turn-on time: 115µs
On-state resistance: 0.1Ω
Number of channels: 1
Output current: 4A
Output voltage: 40V
Technology: HITFET®
Case: SO8-EP
Kind of integrated circuit: low-side
на замовлення 2795 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 95.74 грн |
| 6+ | 79.67 грн |
| 25+ | 66.25 грн |
| 100+ | 59.54 грн |
| 250+ | 55.35 грн |
| 500+ | 52.83 грн |
| 1000+ | 47.80 грн |
| BTS5012SDA |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 12mΩ
Number of channels: 1
Output current: 6A
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Case: TO252-5
Kind of integrated circuit: high-side
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 6A; Ch: 1; N-Channel; SMD; TO252-5
Mounting: SMD
Kind of output: N-Channel
Type of integrated circuit: power switch
On-state resistance: 12mΩ
Number of channels: 1
Output current: 6A
Supply voltage: 5.5...20V DC
Technology: High Current PROFET
Case: TO252-5
Kind of integrated circuit: high-side
на замовлення 990 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 177.02 грн |
| 10+ | 129.15 грн |
| BTS3035TF |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 210µs
Turn-on time: 115µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
Technology: HITFET®
Case: PG-TO252-3
Kind of integrated circuit: low-side
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; PG-TO252-3
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 210µs
Turn-on time: 115µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
Technology: HITFET®
Case: PG-TO252-3
Kind of integrated circuit: low-side
на замовлення 1071 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 119.22 грн |
| 5+ | 101.48 грн |
| 10+ | 94.77 грн |
| 25+ | 84.70 грн |
| 100+ | 73.80 грн |
| 250+ | 67.93 грн |
| 500+ | 62.90 грн |
| 1000+ | 62.06 грн |
| BTS3035EJ |
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Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 210µs
Turn-on time: 115µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
Technology: HITFET®
Case: SO8-EP
Kind of integrated circuit: low-side
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 5A; Ch: 1; N-Channel; SMD; SO8-EP
Mounting: SMD
Operating temperature: -40...150°C
Kind of output: N-Channel
Type of integrated circuit: power switch
Turn-off time: 210µs
Turn-on time: 115µs
On-state resistance: 70mΩ
Number of channels: 1
Output current: 5A
Output voltage: 40V
Technology: HITFET®
Case: SO8-EP
Kind of integrated circuit: low-side
на замовлення 2995 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 90.57 грн |
| 25+ | 76.32 грн |
| 100+ | 68.77 грн |
| 250+ | 63.74 грн |
| 500+ | 60.38 грн |
| 1000+ | 54.51 грн |
| BSC010N04LSATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
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| BSC010N04LSIATMA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 139W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 1mΩ
Mounting: SMD
Kind of channel: enhancement
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| BCR320UE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Operating voltage: 0...25V DC
Output current: 0.25A
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Topology: single transistor
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Case: SC74
Mounting: SMD
Operating voltage: 0...25V DC
Output current: 0.25A
Kind of integrated circuit: current regulator; LED driver
Type of integrated circuit: driver
Number of channels: 1
Topology: single transistor
на замовлення 759 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 28.26 грн |
| BCR321UE6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Operating voltage: 0...4.5V DC
Topology: single transistor
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 0.25A
Number of channels: 1
Mounting: SMD
Operating voltage: 0...4.5V DC
Topology: single transistor
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| SN7002NH6327XTSA2 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.2A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhancement
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| IPW60R031CFD7 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 40A; 278W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 278W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 141nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 13 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 599.70 грн |
| 3+ | 513.25 грн |
| 10+ | 481.38 грн |
| IPW60R037P7XKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 255W; PG-TO247-3; ESD
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 255W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Version: ESD
на замовлення 158 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 560.86 грн |
| 2+ | 493.13 грн |
| 5+ | 435.26 грн |
| 10+ | 409.26 грн |
| IPW60R037CSFDXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; 245W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 25A
Power dissipation: 245W
Case: TO247-3
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Kind of channel: enhancement
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| BCV46E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 60V; 0.5A; 0.36W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.36W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
на замовлення 8720 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 18.06 грн |
| 34+ | 12.50 грн |
| 100+ | 9.23 грн |
| 250+ | 8.19 грн |
| 1000+ | 6.73 грн |
| 3000+ | 5.75 грн |
| BCR112E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 4.7kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 140MHz
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
на замовлення 20 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.58 грн |
| BCV61BE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Collector current: 0.1A
Power dissipation: 0.3W
Type of transistor: NPN x2
Collector-emitter voltage: 30V
Polarisation: bipolar
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Collector current: 0.1A
Power dissipation: 0.3W
Type of transistor: NPN x2
Collector-emitter voltage: 30V
Polarisation: bipolar
Frequency: 250MHz
на замовлення 928 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.71 грн |
| 25+ | 16.94 грн |
| 100+ | 12.58 грн |
| 250+ | 11.07 грн |
| 500+ | 10.06 грн |
| BCR505E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
на замовлення 5972 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.58 грн |
| 26+ | 16.61 грн |
| 29+ | 14.76 грн |
| 100+ | 9.56 грн |
| 250+ | 7.97 грн |
| 500+ | 6.88 грн |
| 1000+ | 6.21 грн |
| 3000+ | 5.87 грн |
| BCR135E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 372 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.74 грн |
| 53+ | 7.97 грн |
| 100+ | 5.28 грн |
| BCR185E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
на замовлення 1615 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.23 грн |
| 91+ | 4.63 грн |
| 111+ | 3.80 грн |
| 250+ | 3.35 грн |
| 500+ | 3.07 грн |
| 1000+ | 2.79 грн |
| BCX71KE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 11042 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 95+ | 4.77 грн |
| 106+ | 3.98 грн |
| 250+ | 3.51 грн |
| 1000+ | 3.04 грн |
| 3000+ | 2.99 грн |
| BCR148E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 47kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
на замовлення 135 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 80+ | 5.71 грн |
| 100+ | 4.78 грн |
| BCR533E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
на замовлення 4 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 112.90 грн |
| BCR158E6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
на замовлення 10 шт:
термін постачання 14-30 дні (днів)В кошику од. на суму грн.
| BCX70HE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 1050 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 4.55 грн |
| 111+ | 3.81 грн |
| 250+ | 3.36 грн |
| 1000+ | 2.93 грн |
| BCX71HE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 2380 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 60+ | 7.59 грн |
| 160+ | 2.65 грн |
| 180+ | 2.38 грн |
| 500+ | 2.11 грн |
| BCR503E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 100MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
на замовлення 3310 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 24.39 грн |
| 25+ | 17.28 грн |
| 30+ | 14.34 грн |
| 100+ | 7.51 грн |
| 250+ | 6.12 грн |
| 500+ | 5.40 грн |
| 1000+ | 4.87 грн |
| 1300+ | 4.70 грн |
| 3000+ | 4.31 грн |
| BC847SH6327XTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.25W; SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT363
Mounting: SMD
Frequency: 250MHz
на замовлення 1281 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.45 грн |
| 55+ | 7.72 грн |
| 72+ | 5.87 грн |
| 100+ | 5.20 грн |
| 500+ | 4.53 грн |
| BCX71GE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
на замовлення 2720 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 98+ | 4.62 грн |
| 109+ | 3.87 грн |
| 250+ | 3.42 грн |
| 1000+ | 2.98 грн |
| BCW67CE6327 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 32V; 0.8A; 0.33W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 32V
Collector current: 0.8A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 200MHz
на замовлення 48 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 16.26 грн |
| 45+ | 9.48 грн |
| 48+ | 8.39 грн |
| BCR555E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 0.33W; SOT23; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.5A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 150MHz
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 100.25 грн |
| 54+ | 7.80 грн |
| 100+ | 7.04 грн |
| 500+ | 5.95 грн |
| FM24VN10-G |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of interface: serial
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Clock frequency: 3.4MHz
Memory organisation: 128kx8bit
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of interface: serial
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Clock frequency: 3.4MHz
Memory organisation: 128kx8bit
товару немає в наявності
В кошику
од. на суму грн.
| FM24V01A-G |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 16kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 16kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
товару немає в наявності
В кошику
од. на суму грн.
| FM24V01A-GTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 16kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 16kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
товару немає в наявності
В кошику
од. на суму грн.
| FM24V05-GTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 512kb FRAM
Interface: I2C
Memory organisation: 64kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Type of integrated circuit: FRAM memory
Kind of memory: FRAM
Memory: 512kb FRAM
Interface: I2C
Memory organisation: 64kx8bit
Supply voltage: 2...3.6V DC
Clock frequency: 3.4MHz
Case: SO8
Mounting: SMD
Kind of interface: serial
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| FM24V02A-G |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 256kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 32kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 256kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 32kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
товару немає в наявності
В кошику
од. на суму грн.
| FM24V05-G |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of interface: serial
Supply voltage: 2...3.6V DC
Memory: 512kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 64kx8bit
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 512kbFRAM; I2C; 64kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of interface: serial
Supply voltage: 2...3.6V DC
Memory: 512kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 64kx8bit
товару немає в наявності
В кошику
од. на суму грн.
| FM24V02A-GTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 256kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 32kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Interface: I2C
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 256kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 32kx8bit
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Kind of interface: serial
товару немає в наявності
В кошику
од. на суму грн.
| FM24VN10-GTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Mounting: SMD
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of interface: serial
Case: SO8
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Clock frequency: 3.4MHz
Memory organisation: 128kx8bit
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 1MbFRAM; I2C; 128kx8bit; 2÷3.6VDC; 3.4MHz; SO8
Mounting: SMD
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of interface: serial
Case: SO8
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 1Mb FRAM
Clock frequency: 3.4MHz
Memory organisation: 128kx8bit
товару немає в наявності
В кошику
од. на суму грн.
| FM24W256-G |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of interface: serial
Supply voltage: 2.7...5.5V DC
Memory: 256kb FRAM
Clock frequency: 1MHz
Memory organisation: 32kx8bit
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of interface: serial
Supply voltage: 2.7...5.5V DC
Memory: 256kb FRAM
Clock frequency: 1MHz
Memory organisation: 32kx8bit
товару немає в наявності
В кошику
од. на суму грн.
| FM24W256-GTR |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of interface: serial
Supply voltage: 2.7...5.5V DC
Memory: 256kb FRAM
Clock frequency: 1MHz
Memory organisation: 32kx8bit
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 256kbFRAM; I2C; 32kx8bit; 2.7÷5.5VDC; 1MHz; SO8
Mounting: SMD
Operating temperature: -40...85°C
Case: SO8
Kind of memory: FRAM
Type of integrated circuit: FRAM memory
Interface: I2C
Kind of interface: serial
Supply voltage: 2.7...5.5V DC
Memory: 256kb FRAM
Clock frequency: 1MHz
Memory organisation: 32kx8bit
товару немає в наявності
В кошику
од. на суму грн.
| BAT165E6327HTSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.75A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 0.75A
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.75A
Semiconductor structure: single diode
Max. forward voltage: 0.74V
на замовлення 2894 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.90 грн |
| 22+ | 19.71 грн |
| 50+ | 13.59 грн |
| 100+ | 11.57 грн |
| 500+ | 8.22 грн |
| 1000+ | 7.21 грн |
| IPA65R400CEXKSA1 |
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Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15.1A; 31W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 0.36Ω
Drain current: 15.1A
Power dissipation: 31W
Drain-source voltage: 650V
Case: TO220FP
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 15.1A; 31W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 0.36Ω
Drain current: 15.1A
Power dissipation: 31W
Drain-source voltage: 650V
Case: TO220FP
Kind of channel: enhancement
на замовлення 92 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 95.74 грн |
| 10+ | 56.11 грн |
| 15+ | 53.76 грн |
| 50+ | 47.47 грн |
| CY15B128J-SXA |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: I2C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: I2C
товару немає в наявності
В кошику
од. на суму грн.
| CY15B128J-SXAT |
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Виробник: INFINEON TECHNOLOGIES
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: I2C
Category: FRAM memories - integrated circuits
Description: IC: FRAM memory; 128kbFRAM; I2C; 16kx8bit; 2÷3.6VDC; 3.4MHz; SOIC8
Type of integrated circuit: FRAM memory
Case: SOIC8
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Memory: 128kb FRAM
Clock frequency: 3.4MHz
Memory organisation: 16kx8bit
Kind of memory: FRAM
Interface: I2C
товару немає в наявності
В кошику
од. на суму грн.


















