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CY8C4124PVI-432 CY8C4124PVI-432 INFINEON TECHNOLOGIES CY8C4124AXI-443.pdf Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,16kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense; LCD controller
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BGSX24MU16E6327XUSA1 INFINEON TECHNOLOGIES Infineon-BGSX24MU16-DataSheet-v02_01-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214 Category: Analog multiplexers and switches
Description: IC: RF switch; DP4T; MIPI; ULGA16-1; 1.65÷3.4VDC; 0.1÷5GHz
Mounting: SMD
Type of integrated circuit: RF switch
Supply voltage: 1.65...3.4V DC
Bandwidth: 0.1...5GHz
Case: ULGA16-1
Output configuration: DP4T
Application: telecommunication
Interface: MIPI
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BGSX24MU16E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGSX24MU16-DataSheet-v02_02-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214 Category: Analog multiplexers and switches
Description: IC: RF switch
на замовлення 4500 шт:
термін постачання 14-30 дні (днів)
4500+55.09 грн
Мінімальне замовлення: 4500
В кошику  од. на суму  грн.
BGSX44MA12E6327XTSA1 INFINEON TECHNOLOGIES Infineon-BGSX44MA12-DataSheet-v02_02-EN.pdf?fileId=5546d462773f9324017744a682e24a43 Category: Analog multiplexers and switches
Description: IC: RF switch
Mounting: SMD
Type of integrated circuit: RF switch
на замовлення 4500 шт:
термін постачання 14-30 дні (днів)
4500+42.63 грн
Мінімальне замовлення: 4500
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IR2181STRPBF INFINEON TECHNOLOGIES ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC8; 1.8A; Ch: 2; MOSFET; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: half-bridge
Case: SOIC8
Output current: 1.8A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 40ns
Pulse fall time: 20ns
Maximum output current: 2.3A
Voltage class: 600V
Turn-on time: 180ns
Power dissipation: 0.625W
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
2500+120.12 грн
Мінімальне замовлення: 2500
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S25FL256SAGMFI011 INFINEON TECHNOLOGIES Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
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BCR431UXTSA1 BCR431UXTSA1 INFINEON TECHNOLOGIES Infineon-BCR431U-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56f0a1c023a Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 6...42V DC
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
20+23.48 грн
24+17.78 грн
27+16.02 грн
30+14.42 грн
50+13.92 грн
100+13.42 грн
Мінімальне замовлення: 20
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PVT412ASPBF INFINEON TECHNOLOGIES IRSDS10638-1.pdf?t.download=true&u=5oefqw Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; SMT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Mounting: SMT
Case: DIP6
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 1600 шт:
термін постачання 14-30 дні (днів)
50+432.61 грн
Мінімальне замовлення: 50
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BSR92PH6327XTSA1 BSR92PH6327XTSA1 INFINEON TECHNOLOGIES BSR92PH6327XTSA1.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
Case: SC59
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.11A
Power dissipation: 0.5W
On-state resistance: 20Ω
Gate-source voltage: ±20V
на замовлення 673 шт:
термін постачання 14-30 дні (днів)
9+51.48 грн
13+32.62 грн
50+22.98 грн
100+19.79 грн
500+14.42 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BSP92PH6327XTSA1 BSP92PH6327XTSA1 INFINEON TECHNOLOGIES BSP92PH6327XTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Case: PG-SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -260mA
Power dissipation: 1.8W
On-state resistance: 12Ω
Gate-source voltage: ±20V
на замовлення 2243 шт:
термін постачання 14-30 дні (днів)
9+54.19 грн
13+32.46 грн
100+20.88 грн
500+15.60 грн
1000+13.84 грн
2000+12.24 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BSS192PH6327FTSA1 BSS192PH6327FTSA1 INFINEON TECHNOLOGIES BSS192PH6327FTSA1-dte.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Case: PG-SOT89
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
On-state resistance: 12Ω
Gate-source voltage: ±20V
на замовлення 771 шт:
термін постачання 14-30 дні (днів)
10+49.67 грн
14+31.87 грн
100+18.95 грн
500+13.25 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
D1251S45TXPSA1 INFINEON TECHNOLOGIES Infineon-D1251S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb6704d13 Category: Diodes - others
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
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1EDI05I12AFXUMA1 1EDI05I12AFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -0.5...0.5A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
на замовлення 732 шт:
термін постачання 14-30 дні (днів)
4+121.93 грн
10+101.48 грн
50+86.38 грн
100+80.51 грн
250+75.48 грн
Мінімальне замовлення: 4
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1EDI60N12AFXUMA1 1EDI60N12AFXUMA1 INFINEON TECHNOLOGIES 1EDIxxy12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Protection: undervoltage UVP
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
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1EDI20N12AFXUMA1 1EDI20N12AFXUMA1 INFINEON TECHNOLOGIES 1EDI20N12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Topology: single transistor
Output current: -2...2A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
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1EDI40I12AFXUMA1 1EDI40I12AFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -4...4A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
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1EDI60I12AFXUMA1 1EDI60I12AFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
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1EDI3033ASXUMA1 INFINEON TECHNOLOGIES infineon-1edi3033as-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; PG-DSO-20; 20A; Ch: 1; MOSFET
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -40...150°C
Output current: 20A
Number of channels: 1
Integrated circuit features: MOSFET
Application: automotive industry
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
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1EDI10I12MFXUMA1 1EDI10I12MFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12MF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -1...1A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
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1EDI2010ASXUMA1 INFINEON TECHNOLOGIES 1EDI2010AS.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; SPI
Case: PG-DSO-36
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Interface: SPI
Output current: -1...1A
Number of channels: 1
Supply voltage: 4.65...5.5V; 13...18V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
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1EDI20I12AFXUMA1 1EDI20I12AFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12AF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -2...2A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
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1EDI20I12MFXUMA1 1EDI20I12MFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12MF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
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1EDI3020ASXUMA1 INFINEON TECHNOLOGIES Infineon-1EDI3020AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c7f990c51 Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; PG-DSO-20; 20A; Ch: 1
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -40...150°C
Output current: 20A
Number of channels: 1
Application: automotive industry
Type of integrated circuit: driver
Kind of integrated circuit: high-side
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1EDI3030ASXUMA1 INFINEON TECHNOLOGIES 1EDI3020ASXUMA1.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; PG-DSO-20; 20A; Ch: 1
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -40...150°C
Output current: 20A
Number of channels: 1
Application: automotive industry
Type of integrated circuit: driver
Kind of integrated circuit: high-side
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1EDI30I12MFXUMA1 1EDI30I12MFXUMA1 INFINEON TECHNOLOGIES 1EDIxxI12MF.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -3...3A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
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BAT6405E6327HTSA1 BAT6405E6327HTSA1 INFINEON TECHNOLOGIES BAT6402VH6327XTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
на замовлення 2813 шт:
термін постачання 14-30 дні (днів)
46+9.93 грн
57+7.38 грн
64+6.63 грн
100+4.86 грн
500+4.10 грн
1000+3.92 грн
Мінімальне замовлення: 46
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ISC019N04NM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC019N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e458430007 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 170A; 100W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 170A
Power dissipation: 100W
Case: PG-TDSON-8 FL
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
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ISC058N04NM5ATMA1 INFINEON TECHNOLOGIES Infineon-ISC058N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4a6770013 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 63A; 42W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 63A
Power dissipation: 42W
Case: PG-TDSON-8 FL
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: 20V
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
5000+24.39 грн
Мінімальне замовлення: 5000
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BSC016N06NSTATMA1 INFINEON TECHNOLOGIES Infineon-BSC016N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801605455cb0b2c6e Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 100A; 139W; PG-TDSON-8 FL; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8 FL
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Gate-source voltage: 20V
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)
5000+149.92 грн
Мінімальне замовлення: 5000
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BSC019N06NSATMA1 INFINEON TECHNOLOGIES Infineon-BSC019N06NS-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546789c12ca7 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 100A; Idm: 100A; 136W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 100A
Power dissipation: 136W
Case: PG-TDSON-8 FL
Gate-source voltage: 20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 77nC
Kind of channel: enhancement
Application: automotive industry
Polarisation: N
Technology: MOSFET
на замовлення 25000 шт:
термін постачання 14-30 дні (днів)
5000+66.83 грн
Мінімальне замовлення: 5000
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IPB320P10LMATMA1 INFINEON TECHNOLOGIES Infineon-IPB320P10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9660ea34edc Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -63A; 300W; D2PAK,TO263
Polarisation: unipolar
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: -100V
Drain current: -63A
Gate charge: 219nC
On-state resistance: 32mΩ
Power dissipation: 300W
Case: D2PAK; TO263
Kind of channel: enhancement
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IPB320N20N3GATMA1 IPB320N20N3GATMA1 INFINEON TECHNOLOGIES IPB320N20N3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Power dissipation: 136W
Technology: OptiMOS™ 3
Case: PG-TO263-3
Kind of channel: enhancement
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BSC032NE2LSATMA1 BSC032NE2LSATMA1 INFINEON TECHNOLOGIES BSC032NE2LS-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 25V
Drain current: 84A
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 37W
Technology: OptiMOS™
Case: PG-TDSON-8
Kind of channel: enhancement
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BSC320N20NS3GATMA1 BSC320N20NS3GATMA1 INFINEON TECHNOLOGIES BSC320N20NS3G-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 36A; 125W; PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 36A
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Power dissipation: 125W
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Kind of channel: enhancement
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IAUC120N06S5L032ATMA1 INFINEON TECHNOLOGIES Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 21A
Gate charge: 51.5nC
On-state resistance: 4.4mΩ
Gate-source voltage: ±16V
Power dissipation: 94W
Pulsed drain current: 364A
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Kind of channel: enhancement
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IPD320N20N3GATMA1 INFINEON TECHNOLOGIES Infineon-IPD320N20N3+G-DS-v02_03-en.pdf?fileId=db3a3043243b5f1701249669796017f3 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 200V; 34A; 136W; PG-TO252-3
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
Gate charge: 29nC
Gate-source voltage: 20V
Power dissipation: 136W
Technology: MOSFET
Case: PG-TO252-3
Kind of channel: enhancement
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)
2500+107.48 грн
Мінімальне замовлення: 2500
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XMC4700E196F1536AAXQMA1 XMC4700E196F1536AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4700
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
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XMC4800E196F1536AAXQMA1 XMC4800E196F1536AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4800
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
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XMC4800E196K1536AAXQMA1 XMC4800E196K1536AAXQMA1 INFINEON TECHNOLOGIES XMC4700-4800-DTE.pdf Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4800
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
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2ED2184S06FXUMA1 2ED2184S06FXUMA1 INFINEON TECHNOLOGIES infineon-2ed2184-4-s06f-j-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Mounting: SMD
Supply voltage: 10...20V
Voltage class: 650V
Integrated circuit features: integrated bootstrap functionality
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Protection: undervoltage UVP
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2ED21844S06JXUMA1 INFINEON TECHNOLOGIES infineon-2ed2184-4-s06f-j-datasheet-en.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
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IRFR3607TRPBF IRFR3607TRPBF INFINEON TECHNOLOGIES irfr3607pbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IKCM15H60GAXKMA2 IKCM15H60GAXKMA2 INFINEON TECHNOLOGIES IKCM15H60GA.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Mounting: THT
Frequency: 20kHz
Power dissipation: 25.2W
Operating voltage: 13.5...18.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Voltage class: 600V
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Operating temperature: -40...125°C
Output current: -15...15A
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
1+695.43 грн
3+605.50 грн
5+576.99 грн
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IKCM15L60GDXKMA1 IKCM15L60GDXKMA1 INFINEON TECHNOLOGIES IKCM15L60GD.pdf Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
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IKCM15L60GAXKMA1 INFINEON TECHNOLOGIES Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7 Category: Motor and PWM drivers
Description: IC: driver; half-bridge; PowerDIP24; 15A; 600V; Uin: 13.5÷18.5V
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: PowerDIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Frequency: 20kHz
Output voltage: 600V
Input voltage: 13.5...18.5V
Maximum output current: 15A
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TLE42754DATMA1 TLE42754DATMA1 INFINEON TECHNOLOGIES Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-TO252-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 5.5...42V
на замовлення 2394 шт:
термін постачання 14-30 дні (днів)
5+101.15 грн
10+71.29 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TLE4268GXUMA2 TLE4268GXUMA2 INFINEON TECHNOLOGIES TLE4268G.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.15A
Voltage drop: 0.25V
Number of channels: 1
Output voltage: 5V
Input voltage: 5.5...45V
на замовлення 298 шт:
термін постачання 14-30 дні (днів)
4+113.80 грн
5+95.61 грн
25+88.90 грн
100+82.19 грн
250+75.48 грн
Мінімальне замовлення: 4
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IKQ50N120CT2XKSA1 IKQ50N120CT2XKSA1 INFINEON TECHNOLOGIES IKQ50N120CT2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 151W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
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IKW50N120CS7XKSA1 INFINEON TECHNOLOGIES Infineon-IKW50N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d8862059d Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 82A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 82A
Pulsed collector current: 150A
Collector-emitter voltage: 1.2kV
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IKY50N120CH3XKSA1 INFINEON TECHNOLOGIES IKY50N120CH3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 173W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 325ns
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
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BAS170WE6327HTSA1 BAS170WE6327HTSA1 INFINEON TECHNOLOGIES BAS170WE6327HTSA1.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
на замовлення 6790 шт:
термін постачання 14-30 дні (днів)
20+22.58 грн
28+15.26 грн
32+13.17 грн
100+8.20 грн
500+6.10 грн
1000+5.43 грн
3000+4.59 грн
6000+4.30 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IDW100E60FKSA1 IDW100E60FKSA1 INFINEON TECHNOLOGIES IDW100E60FKSA1.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; Ifsm: 400A; TO247-3; 120ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: TO247-3
Reverse recovery time: 120ns
на замовлення 99 шт:
термін постачання 14-30 дні (днів)
3+174.44 грн
10+133.35 грн
20+119.93 грн
30+116.57 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP200N25N3GXKSA1 IPP200N25N3GXKSA1 INFINEON TECHNOLOGIES IPP200N25N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Case: PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
On-state resistance: 20mΩ
Power dissipation: 300W
Gate-source voltage: ±20V
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
1+513.90 грн
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IPP320N20N3GXKSA1 IPP320N20N3GXKSA1 INFINEON TECHNOLOGIES IPP320N20N3G-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 32mΩ
Power dissipation: 136W
Drain current: 34A
Gate-source voltage: ±20V
Drain-source voltage: 200V
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
3+202.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE4207GXUMA2 TLE4207GXUMA2 INFINEON TECHNOLOGIES TLE4207G.pdf Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Operating voltage: 8...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: fault detection
Application: universal
Kind of integrated circuit: IMC; motor controller
Topology: MOSFET half-bridge
Case: PG-DSO-14
Kind of package: reel; tape
Output current: 0.8A
Number of channels: 2
на замовлення 2389 шт:
термін постачання 14-30 дні (днів)
6+87.61 грн
10+77.99 грн
25+73.80 грн
100+70.45 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BTS3205NHUSA1 INFINEON TECHNOLOGIES Infineon-BTS3205N-DS-v01_01-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f4ba4f81d5ec6&ack=t Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.6A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: 7 inch reel
Case: SOT223-4
Output current: 0.6A
Power dissipation: 0.78W
Number of channels: 1
On-state resistance: 1.9Ω
Output voltage: 42V
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BTS3205NHUMA1 INFINEON TECHNOLOGIES Infineon-BTS3205N-DS-v01_01-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f4ba4f81d5ec6&ack=t Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.6A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: 13 inch reel
Case: SOT223-4
Output current: 0.6A
Power dissipation: 0.78W
Number of channels: 1
On-state resistance: 1.9Ω
Output voltage: 42V
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BCV61CE6327 BCV61CE6327 INFINEON TECHNOLOGIES bcv61.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Collector current: 0.1A
Power dissipation: 0.3W
Type of transistor: NPN x2
Collector-emitter voltage: 30V
Polarisation: bipolar
Frequency: 250MHz
на замовлення 158 шт:
термін постачання 14-30 дні (днів)
22+20.77 грн
28+15.01 грн
100+10.23 грн
Мінімальне замовлення: 22
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BCV62CE6327 BCV62CE6327 INFINEON TECHNOLOGIES BCV62.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
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IRF9389TRPBF IRF9389TRPBF INFINEON TECHNOLOGIES IRF9389TRPBF.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 3855 шт:
термін постачання 14-30 дні (днів)
10+49.67 грн
13+33.55 грн
50+23.31 грн
100+19.88 грн
250+17.95 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
CY8C4124PVI-432 CY8C4124AXI-443.pdf
CY8C4124PVI-432
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: PSoC microcontroller; 24MHz; SSOP28; 4kBSRAM,16kBFLASH
Interface: GPIO; I2C; IrDA; LIN; Smart Card; SPI; UART
Mounting: SMD
Case: SSOP28
Operating temperature: -40...85°C
Supply voltage: 1.71...5.5V DC
Number of inputs/outputs: 24
Memory: 4kB SRAM; 16kB FLASH
Clock frequency: 24MHz
Kind of core: 32-bit
Type of integrated circuit: PSoC microcontroller
Integrated circuit features: CapSense; LCD controller
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BGSX24MU16E6327XUSA1 Infineon-BGSX24MU16-DataSheet-v02_01-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214
Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; DP4T; MIPI; ULGA16-1; 1.65÷3.4VDC; 0.1÷5GHz
Mounting: SMD
Type of integrated circuit: RF switch
Supply voltage: 1.65...3.4V DC
Bandwidth: 0.1...5GHz
Case: ULGA16-1
Output configuration: DP4T
Application: telecommunication
Interface: MIPI
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BGSX24MU16E6327XTSA1 Infineon-BGSX24MU16-DataSheet-v02_02-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214
Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch
на замовлення 4500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4500+55.09 грн
Мінімальне замовлення: 4500
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BGSX44MA12E6327XTSA1 Infineon-BGSX44MA12-DataSheet-v02_02-EN.pdf?fileId=5546d462773f9324017744a682e24a43
Виробник: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch
Mounting: SMD
Type of integrated circuit: RF switch
на замовлення 4500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4500+42.63 грн
Мінімальне замовлення: 4500
В кошику  од. на суму  грн.
IR2181STRPBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; half-bridge; SOIC8; 1.8A; Ch: 2; MOSFET; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: half-bridge
Case: SOIC8
Output current: 1.8A
Number of channels: 2
Integrated circuit features: MOSFET
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 40ns
Pulse fall time: 20ns
Maximum output current: 2.3A
Voltage class: 600V
Turn-on time: 180ns
Power dissipation: 0.625W
на замовлення 2500 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2500+120.12 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
S25FL256SAGMFI011 Infineon-S25FL128S_S25FL256S_128_Mb_(16_MB)_256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
Виробник: INFINEON TECHNOLOGIES
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; QUAD SPI; 133MHz; 2.7÷3.6V; SOIC16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Interface: QUAD SPI
Operating frequency: 133MHz
Operating voltage: 2.7...3.6V
Case: SOIC16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: tube
товару немає в наявності
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BCR431UXTSA1 Infineon-BCR431U-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56f0a1c023a
BCR431UXTSA1
Виробник: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: PG-SOT23-6
Output current: 20...100mA
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 6...42V DC
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+23.48 грн
24+17.78 грн
27+16.02 грн
30+14.42 грн
50+13.92 грн
100+13.42 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
PVT412ASPBF IRSDS10638-1.pdf?t.download=true&u=5oefqw
Виробник: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 1.2VDC; 25mA; SMT; DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 1.2V DC
Control current max.: 25mA
Mounting: SMT
Case: DIP6
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 1600 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+432.61 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BSR92PH6327XTSA1 BSR92PH6327XTSA1.pdf
BSR92PH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.11A; 0.5W; SC59
Case: SC59
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -0.11A
Power dissipation: 0.5W
On-state resistance: 20Ω
Gate-source voltage: ±20V
на замовлення 673 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+51.48 грн
13+32.62 грн
50+22.98 грн
100+19.79 грн
500+14.42 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BSP92PH6327XTSA1 BSP92PH6327XTSA1-dte.pdf
BSP92PH6327XTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.26A; 1.8W; PG-SOT223
Case: PG-SOT223
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -260mA
Power dissipation: 1.8W
On-state resistance: 12Ω
Gate-source voltage: ±20V
на замовлення 2243 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
9+54.19 грн
13+32.46 грн
100+20.88 грн
500+15.60 грн
1000+13.84 грн
2000+12.24 грн
Мінімальне замовлення: 9
В кошику  од. на суму  грн.
BSS192PH6327FTSA1 BSS192PH6327FTSA1-dte.pdf
BSS192PH6327FTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -250V; -0.19A; 1W; PG-SOT89
Case: PG-SOT89
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: SIPMOS™
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -250V
Drain current: -190mA
Power dissipation: 1W
On-state resistance: 12Ω
Gate-source voltage: ±20V
на замовлення 771 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+49.67 грн
14+31.87 грн
100+18.95 грн
500+13.25 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
D1251S45TXPSA1 Infineon-D1251S-DS-v01_01-en_de.pdf?fileId=db3a304412b407950112b42fb6704d13
Виробник: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: hockey-puck rectifying
Type of diode: hockey-puck rectifying
товару немає в наявності
В кошику  од. на суму  грн.
1EDI05I12AFXUMA1 1EDIxxI12AF.pdf
1EDI05I12AFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; Ch: 1
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -0.5...0.5A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
на замовлення 732 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+121.93 грн
10+101.48 грн
50+86.38 грн
100+80.51 грн
250+75.48 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
1EDI60N12AFXUMA1 1EDIxxy12AF.pdf
1EDI60N12AFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,MOSFET gate driver
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Protection: undervoltage UVP
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
товару немає в наявності
В кошику  од. на суму  грн.
1EDI20N12AFXUMA1 1EDI20N12AF.pdf
1EDI20N12AFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Voltage class: 1.2kV
Kind of integrated circuit: gate driver; high-side
Type of integrated circuit: driver
Topology: single transistor
Output current: -2...2A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
товару немає в наявності
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1EDI40I12AFXUMA1 1EDIxxI12AF.pdf
1EDI40I12AFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -4÷4A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -4...4A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
товару немає в наявності
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1EDI60I12AFXUMA1 1EDIxxI12AF.pdf
1EDI60I12AFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -6÷6A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -6...6A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
товару немає в наявності
В кошику  од. на суму  грн.
1EDI3033ASXUMA1 infineon-1edi3033as-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side,gate driver; PG-DSO-20; 20A; Ch: 1; MOSFET
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -40...150°C
Output current: 20A
Number of channels: 1
Integrated circuit features: MOSFET
Application: automotive industry
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-side
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1EDI10I12MFXUMA1 1EDIxxI12MF.pdf
1EDI10I12MFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -1÷1A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -1...1A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
товару немає в наявності
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1EDI2010ASXUMA1 1EDI2010AS.pdf
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; SPI
Case: PG-DSO-36
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Interface: SPI
Output current: -1...1A
Number of channels: 1
Supply voltage: 4.65...5.5V; 13...18V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
товару немає в наявності
В кошику  од. на суму  грн.
1EDI20I12AFXUMA1 1EDIxxI12AF.pdf
1EDI20I12AFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -2...2A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
товару немає в наявності
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1EDI20I12MFXUMA1 1EDIxxI12MF.pdf
1EDI20I12MFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-8
Output current: -2...2A
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 3.1...17V; 13...35V
Voltage class: 1.2kV
товару немає в наявності
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1EDI3020ASXUMA1 Infineon-1EDI3020AS-DataSheet-v01_00-EN.pdf?fileId=5546d4627956d53f0179895c7f990c51
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; PG-DSO-20; 20A; Ch: 1
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -40...150°C
Output current: 20A
Number of channels: 1
Application: automotive industry
Type of integrated circuit: driver
Kind of integrated circuit: high-side
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1EDI3030ASXUMA1 1EDI3020ASXUMA1.pdf
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; high-side; PG-DSO-20; 20A; Ch: 1
Case: PG-DSO-20
Mounting: SMD
Operating temperature: -40...150°C
Output current: 20A
Number of channels: 1
Application: automotive industry
Type of integrated circuit: driver
Kind of integrated circuit: high-side
товару немає в наявності
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1EDI30I12MFXUMA1 1EDIxxI12MF.pdf
1EDI30I12MFXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -3÷3A
Case: PG-DSO-8
Kind of package: reel; tape
Topology: single transistor
Mounting: SMD
Output current: -3...3A
Number of channels: 1
Supply voltage: 3.1...17V; 13...35V
Integrated circuit features: active Miller clamp; galvanically isolated
Voltage class: 1.2kV
Type of integrated circuit: driver
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; IGBT gate driver
товару немає в наявності
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BAT6405E6327HTSA1 BAT6402VH6327XTSA1.pdf
BAT6405E6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 40V; 0.25A; 250mW
Type of diode: Schottky switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.75V
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
на замовлення 2813 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
46+9.93 грн
57+7.38 грн
64+6.63 грн
100+4.86 грн
500+4.10 грн
1000+3.92 грн
Мінімальне замовлення: 46
В кошику  од. на суму  грн.
ISC019N04NM5ATMA1 Infineon-ISC019N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e458430007
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 170A; 100W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 170A
Power dissipation: 100W
Case: PG-TDSON-8 FL
On-state resistance: 1.9mΩ
Mounting: SMD
Gate charge: 42nC
Kind of channel: enhancement
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ISC058N04NM5ATMA1 Infineon-ISC058N04NM5-DataSheet-v02_01-EN.pdf?fileId=5546d46271104011017110e4a6770013
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 40V; 63A; 42W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 40V
Drain current: 63A
Power dissipation: 42W
Case: PG-TDSON-8 FL
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: 20V
на замовлення 10000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5000+24.39 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC016N06NSTATMA1 Infineon-BSC016N06NST-DS-v02_00-EN.pdf?fileId=5546d462602a9dc801605455cb0b2c6e
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 100A; 139W; PG-TDSON-8 FL; SMT
Type of transistor: N-MOSFET
Polarisation: N
Drain-source voltage: 60V
Drain current: 100A
Power dissipation: 139W
Case: PG-TDSON-8 FL
On-state resistance: 1.6mΩ
Mounting: SMD
Kind of channel: enhancement
Technology: MOSFET
Electrical mounting: SMT
Gate-source voltage: 20V
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5000+149.92 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
BSC019N06NSATMA1 Infineon-BSC019N06NS-DS-v02_01-EN.pdf?fileId=5546d462602a9dc80160546789c12ca7
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 60V; 100A; Idm: 100A; 136W; PG-TDSON-8 FL
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 100A
Power dissipation: 136W
Case: PG-TDSON-8 FL
Gate-source voltage: 20V
On-state resistance: 1.95mΩ
Mounting: SMD
Gate charge: 77nC
Kind of channel: enhancement
Application: automotive industry
Polarisation: N
Technology: MOSFET
на замовлення 25000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5000+66.83 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IPB320P10LMATMA1 Infineon-IPB320P10LM-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c7bb971ed017bc9660ea34edc
Виробник: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -63A; 300W; D2PAK,TO263
Polarisation: unipolar
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: -100V
Drain current: -63A
Gate charge: 219nC
On-state resistance: 32mΩ
Power dissipation: 300W
Case: D2PAK; TO263
Kind of channel: enhancement
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IPB320N20N3GATMA1 IPB320N20N3G-DTE.pdf
IPB320N20N3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO263-3
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Power dissipation: 136W
Technology: OptiMOS™ 3
Case: PG-TO263-3
Kind of channel: enhancement
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BSC032NE2LSATMA1 BSC032NE2LS-DTE.pdf
BSC032NE2LSATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 84A; 37W; PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 25V
Drain current: 84A
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Power dissipation: 37W
Technology: OptiMOS™
Case: PG-TDSON-8
Kind of channel: enhancement
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BSC320N20NS3GATMA1 BSC320N20NS3G-DTE.pdf
BSC320N20NS3GATMA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 36A; 125W; PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 36A
On-state resistance: 32mΩ
Gate-source voltage: ±20V
Power dissipation: 125W
Technology: OptiMOS™ 3
Case: PG-TDSON-8
Kind of channel: enhancement
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IAUC120N06S5L032ATMA1 Infineon-IAUC120N06S5L032-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f468428461b1
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 364A; 94W; PG-TDSON-8
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Drain-source voltage: 60V
Drain current: 21A
Gate charge: 51.5nC
On-state resistance: 4.4mΩ
Gate-source voltage: ±16V
Power dissipation: 94W
Pulsed drain current: 364A
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Kind of channel: enhancement
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IPD320N20N3GATMA1 Infineon-IPD320N20N3+G-DS-v02_03-en.pdf?fileId=db3a3043243b5f1701249669796017f3
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; N; 200V; 34A; 136W; PG-TO252-3
Polarisation: N
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 200V
Drain current: 34A
Gate charge: 29nC
Gate-source voltage: 20V
Power dissipation: 136W
Technology: MOSFET
Case: PG-TO252-3
Kind of channel: enhancement
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2500+107.48 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
XMC4700E196F1536AAXQMA1 XMC4700-4800-DTE.pdf
XMC4700E196F1536AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4700
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
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XMC4800E196F1536AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800E196F1536AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4800
Operating temperature: -40...85°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
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XMC4800E196K1536AAXQMA1 XMC4700-4800-DTE.pdf
XMC4800E196K1536AAXQMA1
Виробник: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: ARM microcontroller; PG-LFBGA-196; 276kBSRAM,1536kBFLASH
Kind of architecture: Cortex M4
Case: PG-LFBGA-196
Family: XMC4800
Operating temperature: -40...125°C
Supply voltage: 3.3V DC
Number of A/D channels: 26
Number of inputs/outputs: 155
Kind of core: 32-bit
Memory: 276kB SRAM; 1.5MB FLASH
Type of integrated circuit: ARM microcontroller
Interface: CAN x6; EBI; GPIO; I2C; I2S; SPI; UART
Integrated circuit features: clock gaiting; DSP; EEPROM emulation (DataFlash); RTC; watchdog
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2ED2184S06FXUMA1 infineon-2ed2184-4-s06f-j-datasheet-en.pdf
2ED2184S06FXUMA1
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-8; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-8
Output current: -2.5...2.5A
Number of channels: 2
Mounting: SMD
Supply voltage: 10...20V
Voltage class: 650V
Integrated circuit features: integrated bootstrap functionality
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Protection: undervoltage UVP
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2ED21844S06JXUMA1 infineon-2ed2184-4-s06f-j-datasheet-en.pdf
Виробник: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; PG-DSO-14; Ch: 2
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: PG-DSO-14
Output current: -2.5...2.5A
Number of channels: 2
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Supply voltage: 10...20V
Voltage class: 650V
Protection: undervoltage UVP
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IRFR3607TRPBF irfr3607pbf.pdf
IRFR3607TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 80A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 80A
Power dissipation: 140W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
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IKCM15H60GAXKMA2 IKCM15H60GA.pdf
IKCM15H60GAXKMA2
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Mounting: THT
Frequency: 20kHz
Power dissipation: 25.2W
Operating voltage: 13.5...18.5/0...400V DC
Kind of integrated circuit: 3-phase motor controller; IPM
Voltage class: 600V
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Integrated circuit features: integrated bootstrap functionality
Operating temperature: -40...125°C
Output current: -15...15A
на замовлення 40 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+695.43 грн
3+605.50 грн
5+576.99 грн
В кошику  од. на суму  грн.
IKCM15L60GDXKMA1 IKCM15L60GD.pdf
IKCM15L60GDXKMA1
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,thermistor; PG-MDIP24; 20kHz
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: ClPOS™ Mini; TRENCHSTOP™
Case: PG-MDIP24
Output current: -15...15A
Integrated circuit features: integrated bootstrap functionality
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...18.5/0...400V DC
Frequency: 20kHz
Voltage class: 600V
Power dissipation: 58.6W
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IKCM15L60GAXKMA1 Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; half-bridge; PowerDIP24; 15A; 600V; Uin: 13.5÷18.5V
Type of integrated circuit: driver
Kind of integrated circuit: half-bridge
Case: PowerDIP24
Output current: 15A
Mounting: THT
Operating temperature: -40...125°C
Frequency: 20kHz
Output voltage: 600V
Input voltage: 13.5...18.5V
Maximum output current: 15A
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TLE42754DATMA1 Infineon-TLE42754-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8e99a01fab
TLE42754DATMA1
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.45A; PG-TO252-5
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.25V
Output voltage: 5V
Output current: 0.45A
Case: PG-TO252-5
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...150°C
Number of channels: 1
Input voltage: 5.5...42V
на замовлення 2394 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+101.15 грн
10+71.29 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
TLE4268GXUMA2 TLE4268G.pdf
TLE4268GXUMA2
Виробник: INFINEON TECHNOLOGIES
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.15A; PG-DSO-20; SMD
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Case: PG-DSO-20
Type of integrated circuit: voltage regulator
Operating temperature: -40...150°C
Output current: 0.15A
Voltage drop: 0.25V
Number of channels: 1
Output voltage: 5V
Input voltage: 5.5...45V
на замовлення 298 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
4+113.80 грн
5+95.61 грн
25+88.90 грн
100+82.19 грн
250+75.48 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IKQ50N120CT2XKSA1 IKQ50N120CT2.pdf
IKQ50N120CT2XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 151W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 2
Power dissipation: 151W
Case: TO247-3
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Collector-emitter voltage: 1.2kV
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IKW50N120CS7XKSA1 Infineon-IKW50N120CS7-DataSheet-v01_00-EN.pdf?fileId=5546d46278d64ffd0178f97d8862059d
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 82A; 428W; TO247-3
Type of transistor: IGBT
Power dissipation: 428W
Case: TO247-3
Mounting: THT
Gate-emitter voltage: ±20V
Collector current: 82A
Pulsed collector current: 150A
Collector-emitter voltage: 1.2kV
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IKY50N120CH3XKSA1 IKY50N120CH3.pdf
Виробник: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 173W; TO247PLUS-4; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Power dissipation: 173W
Case: TO247PLUS-4
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Turn-on time: 60ns
Turn-off time: 325ns
Gate-emitter voltage: ±20V
Collector current: 50A
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 200A
Manufacturer series: H3
Collector-emitter voltage: 1.2kV
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BAS170WE6327HTSA1 BAS170WE6327HTSA1.pdf
BAS170WE6327HTSA1
Виробник: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; 70mA; 250mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Power dissipation: 0.25W
на замовлення 6790 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
20+22.58 грн
28+15.26 грн
32+13.17 грн
100+8.20 грн
500+6.10 грн
1000+5.43 грн
3000+4.59 грн
6000+4.30 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
IDW100E60FKSA1 IDW100E60FKSA1.pdf
IDW100E60FKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; tube; Ifsm: 400A; TO247-3; 120ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.4kA
Case: TO247-3
Reverse recovery time: 120ns
на замовлення 99 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+174.44 грн
10+133.35 грн
20+119.93 грн
30+116.57 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPP200N25N3GXKSA1 IPP200N25N3G-DTE.pdf
IPP200N25N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 64A; 300W; PG-TO220-3
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Case: PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 64A
On-state resistance: 20mΩ
Power dissipation: 300W
Gate-source voltage: ±20V
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+513.90 грн
В кошику  од. на суму  грн.
IPP320N20N3GXKSA1 IPP320N20N3G-DTE.pdf
IPP320N20N3GXKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 34A; 136W; PG-TO220-3
Mounting: THT
Kind of channel: enhancement
Technology: OptiMOS™ 3
Type of transistor: N-MOSFET
Case: PG-TO220-3
Kind of package: tube
Polarisation: unipolar
On-state resistance: 32mΩ
Power dissipation: 136W
Drain current: 34A
Gate-source voltage: ±20V
Drain-source voltage: 200V
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+202.31 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE4207GXUMA2 TLE4207G.pdf
TLE4207GXUMA2
Виробник: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-DSO-14
Operating voltage: 8...18V DC
Mounting: SMD
Operating temperature: -40...150°C
Type of integrated circuit: driver
Integrated circuit features: fault detection
Application: universal
Kind of integrated circuit: IMC; motor controller
Topology: MOSFET half-bridge
Case: PG-DSO-14
Kind of package: reel; tape
Output current: 0.8A
Number of channels: 2
на замовлення 2389 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
6+87.61 грн
10+77.99 грн
25+73.80 грн
100+70.45 грн
Мінімальне замовлення: 6
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BTS3205NHUSA1 Infineon-BTS3205N-DS-v01_01-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f4ba4f81d5ec6&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.6A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: 7 inch reel
Case: SOT223-4
Output current: 0.6A
Power dissipation: 0.78W
Number of channels: 1
On-state resistance: 1.9Ω
Output voltage: 42V
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BTS3205NHUMA1 Infineon-BTS3205N-DS-v01_01-en.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a30431ed1d7b2011f4ba4f81d5ec6&ack=t
Виробник: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 0.6A; Ch: 1; N-Channel; SMD; SOT223-4
Mounting: SMD
Technology: HITFET®
Kind of integrated circuit: low-side
Kind of output: N-Channel
Type of integrated circuit: power switch
Kind of package: 13 inch reel
Case: SOT223-4
Output current: 0.6A
Power dissipation: 0.78W
Number of channels: 1
On-state resistance: 1.9Ω
Output voltage: 42V
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BCV61CE6327 bcv61.pdf
BCV61CE6327
Виробник: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Mounting: SMD
Case: SOT143
Collector current: 0.1A
Power dissipation: 0.3W
Type of transistor: NPN x2
Collector-emitter voltage: 30V
Polarisation: bipolar
Frequency: 250MHz
на замовлення 158 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
22+20.77 грн
28+15.01 грн
100+10.23 грн
Мінімальне замовлення: 22
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BCV62CE6327 BCV62.pdf
BCV62CE6327
Виробник: INFINEON TECHNOLOGIES
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 30V; 0.1A; 0.3W; SOT143
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SOT143
Mounting: SMD
Frequency: 250MHz
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IRF9389TRPBF IRF9389TRPBF.pdf
IRF9389TRPBF
Виробник: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 6.8/-4.6A; 2W; SO8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 6.8/-4.6A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 27/64mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Technology: HEXFET®
на замовлення 3855 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
10+49.67 грн
13+33.55 грн
50+23.31 грн
100+19.88 грн
250+17.95 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
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