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BSP320SH6327XTSA1 BSP320SH6327XTSA1 Infineon Technologies Infineon-BSP320S-DS-v02_05-en.pdf?fileId=db3a30433b47825b013b515cf1f42949 Description: MOSFET N-CH 60V 2.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 582 шт:
термін постачання 21-31 дні (днів)
4+85.51 грн
10+51.62 грн
100+33.94 грн
500+24.70 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BSS138NH6433XTMA1 BSS138NH6433XTMA1 Infineon Technologies Infineon-BSS138N-DS-v02_86-en.pdf?fileId=db3a304330f68606013104d944d53efb Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8117 шт:
термін постачання 21-31 дні (днів)
25+13.15 грн
38+8.39 грн
100+5.47 грн
500+5.04 грн
1000+4.02 грн
2000+3.94 грн
5000+3.37 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BSS214NWH6327XTSA1 BSS214NWH6327XTSA1 Infineon Technologies Infineon-BSS214NW-DS-v02_02-en.pdf?fileId=db3a30431b3e89eb011b695aebc01bde Description: MOSFET N-CH 20V 1.5A SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 74738 шт:
термін постачання 21-31 дні (днів)
18+18.91 грн
27+11.80 грн
100+7.41 грн
500+5.79 грн
1000+5.28 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
BSZ150N10LS3GATMA1 BSZ150N10LS3GATMA1 Infineon Technologies Infineon-BSZ150N10LS3_G-DS-v02_02-en.pdf?fileId=db3a30433c8a9179013c8aa12472000f Description: MOSFET N-CH 100V 40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 33µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 6123 шт:
термін постачання 21-31 дні (днів)
3+127.44 грн
10+83.92 грн
100+59.11 грн
500+47.17 грн
1000+45.01 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPB011N04NGATMA1 IPB011N04NGATMA1 Infineon Technologies IPB011N04N_rev1.0.pdf?folderId=db3a3043163797a6011643468e7505a4&fileId=db3a3043163797a601164373e07005f8 Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 20 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPD038N06N3GATMA1 IPD038N06N3GATMA1 Infineon Technologies IPD038N06N3_Rev1.01.pdf?folderId=db3a3043132679fb0113346bdc4505a3&fileId=db3a304317a7483601181bf8dae11675 Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 30 V
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
2+205.54 грн
10+127.47 грн
100+87.55 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD068N10N3GATMA1 IPD068N10N3GATMA1 Infineon Technologies Infineon-IPD068N10N3G-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1eb7aeb615d1 Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
на замовлення 8128 шт:
термін постачання 21-31 дні (днів)
4+84.68 грн
10+70.15 грн
100+69.49 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD33CN10NGATMA1 IPD33CN10NGATMA1 Infineon Technologies Infineon-IPP35CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42b457b44b1 Description: MOSFET N-CH 100V 27A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 27A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 29µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
на замовлення 28538 шт:
термін постачання 21-31 дні (днів)
4+109.35 грн
10+58.51 грн
100+41.96 грн
500+33.67 грн
1000+31.61 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD80R1K0CEATMA1 IPD80R1K0CEATMA1 Infineon Technologies Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590 Description: MOSFET N-CH 800V 5.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
на замовлення 4554 шт:
термін постачання 21-31 дні (днів)
3+147.17 грн
10+97.78 грн
100+67.26 грн
500+50.25 грн
1000+46.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPN60R2K1CEATMA1 IPN60R2K1CEATMA1 Infineon Technologies Infineon-IPN60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af64ab85b44 Description: MOSFET N-CH 600V 3.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 800mA, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
3000+11.88 грн
6000+10.48 грн
9000+9.56 грн
15000+8.86 грн
21000+8.55 грн
30000+8.41 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPN60R3K4CEATMA1 IPN60R3K4CEATMA1 Infineon Technologies Infineon-IPN60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af659125b4d Description: MOSFET N-CH 600V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+10.65 грн
6000+9.45 грн
9000+7.97 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPN70R1K5CEATMA1 IPN70R1K5CEATMA1 Infineon Technologies Infineon-IPN70R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547aff80a65b6f Description: MOSFET N-CH 700V 5.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+19.88 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPA80R1K4CEXKSA2 IPA80R1K4CEXKSA2 Infineon Technologies Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43 Description: MOSFET N-CH 800V 3.9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
3+136.48 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPAN50R500CEXKSA1 IPAN50R500CEXKSA1 Infineon Technologies Infineon-IPAN50R500CE-DS-v02_01-EN.pdf?fileId=5546d46254e133b40154e74070a8194e Description: MOSFET N-CH 500V 11.1A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
на замовлення 406 шт:
термін постачання 21-31 дні (днів)
3+125.79 грн
50+57.81 грн
100+51.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPAN65R650CEXKSA1 IPAN65R650CEXKSA1 Infineon Technologies Infineon-IPAN65R650CE-DS-v02_00-EN.pdf?fileId=5546d46254e133b40154e76e439a1b24 Description: MOSFET N-CH 650V 10.1A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.1A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
4+97.02 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPS70R950CEAKMA1 IPS70R950CEAKMA1 Infineon Technologies Infineon-IPD70R950CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a32b85797d3c Description: MOSFET N-CH 700V 7.4A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD70R1K4CEAUMA1 IPD70R1K4CEAUMA1 Infineon Technologies Infineon-IPD70R1K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a2a2125c7af1 Description: MOSFET N-CH 700V 5.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 14900 шт:
термін постачання 21-31 дні (днів)
4+91.26 грн
10+55.18 грн
100+36.32 грн
500+26.47 грн
1000+24.02 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD70R950CEAUMA1 IPD70R950CEAUMA1 Infineon Technologies Infineon-IPD70R950CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a32b85797d3c Description: MOSFET N-CH 700V 7.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
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IPN60R3K4CEATMA1 IPN60R3K4CEATMA1 Infineon Technologies Infineon-IPN60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af659125b4d Description: MOSFET N-CH 600V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
на замовлення 18201 шт:
термін постачання 21-31 дні (днів)
8+46.86 грн
12+28.34 грн
100+18.18 грн
500+12.94 грн
1000+11.62 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IPD50R380CEAUMA1 IPD50R380CEAUMA1 Infineon Technologies Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38 Description: MOSFET N-CH 500V 14.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
2500+25.38 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD50R380CEAUMA1 IPD50R380CEAUMA1 Infineon Technologies Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38 Description: MOSFET N-CH 500V 14.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
на замовлення 17989 шт:
термін постачання 21-31 дні (днів)
4+101.95 грн
10+63.26 грн
100+43.36 грн
500+32.03 грн
1000+29.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FM25040B-GA1TR FM25040B-GA1TR Infineon Technologies Description: IC FRAM 4KBIT SPI 14MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 14 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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S29GL01GP11FAIR12 S29GL01GP11FAIR12 Infineon Technologies S29GLyyyP_Dec-16-2015.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S29GL01GP11FFIR23 S29GL01GP11FFIR23 Infineon Technologies S29GLyyyP_Dec-16-2015.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S29GL01GP12FAI020 S29GL01GP12FAI020 Infineon Technologies S29GLyyyP_Dec-16-2015.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 120ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S29GL512P10FAIR12 S29GL512P10FAIR12 Infineon Technologies S29GLyyyP_Dec-16-2015.pdf Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
1+676.64 грн
10+605.19 грн
25+586.66 грн
50+537.38 грн
100+524.32 грн
В кошику  од. на суму  грн.
FM25040B-GA1 FM25040B-GA1 Infineon Technologies Description: IC FRAM 4KBIT SPI 14MHZ 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 14 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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IR2214SSTRPBF IR2214SSTRPBF Infineon Technologies Infineon-IR2x14SS-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a5a8fa04a9b Description: IC GATE DRVR HALF-BRIDGE 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 24-SSOP
Rise / Fall Time (Typ): 24ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 3A
DigiKey Programmable: Not Verified
на замовлення 10097 шт:
термін постачання 21-31 дні (днів)
1+450.55 грн
10+333.55 грн
25+308.42 грн
100+263.55 грн
250+251.20 грн
500+243.75 грн
1000+233.74 грн
В кошику  од. на суму  грн.
IR3447MTRPBF IR3447MTRPBF Infineon Technologies ir3447m.pdf?fileId=5546d462533600a4015355cc97101723 Description: IC REG BUCK ADJ 25A 35PQFN
Packaging: Cut Tape (CT)
Package / Case: 35-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 35-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 5V
Voltage - Output (Min/Fixed): 0.6V
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IR3651STRPBF IR3651STRPBF Infineon Technologies ir3651spbf.pdf?fileId=5546d462533600a4015355d108ff178e Description: IC REG CTRLR BUCK 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 400kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 13.2V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Soft Start
Output Phases: 1
Duty Cycle (Max): 80%
Clock Sync: Yes
Number of Outputs: 1
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IRS2334MTRPBF IRS2334MTRPBF Infineon Technologies irs2334pbf.pdf?fileId=5546d462533600a40153567aa9fe280b Description: IC GATE DRVR HALF-BRIDGE 28MLPQ
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-MLPQ (5x5)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
3+152.10 грн
10+108.39 грн
25+98.84 грн
100+82.93 грн
250+78.23 грн
500+75.40 грн
1000+71.88 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CYW20707UA1KFFB1G CYW20707UA1KFFB1G Infineon Technologies download Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20707UA1KFFB4G CYW20707UA1KFFB4G Infineon Technologies Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_ Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20707UA1KFFB4GT CYW20707UA1KFFB4GT Infineon Technologies Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_ Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20707VA1PKWBGT CYW20707VA1PKWBGT Infineon Technologies Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_ Description: IC RF TXRX+MCU BLE 36WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 36-UFBGA, WLBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 36-WLBGA (2.51x2.77)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20710A1KUBXGT CYW20710A1KUBXGT Infineon Technologies Infineon-CYW20710_Single-Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1f2086813&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: IC RF TXRX+MCU BLE 42WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 42-UFBGA, WLBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 42-WLBGA (3.02x2.51)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20733A3KFB2GT CYW20733A3KFB2GT Infineon Technologies CYW20733_RevS_11-9-17.pdf Description: IC RF TXRX+MCU BLUTOOTH 121TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 121-TFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 121-FBGA (9x9)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW20735KFBG CYW20735KFBG Infineon Technologies PdfFile_564780.pdf Description: IC RF TXRX+MCU BLE 111FBGA
Packaging: Tray
Package / Case: 111-VFBGA
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 10dBm
Protocol: Bluetooth v4.2
Current - Receiving: 8mA
Data Rate (Max): 2Mbps
Current - Transmitting: 18mA
Supplier Device Package: 111-FBGA (9x9)
GPIO: 111
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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CYW43143KMLGT CYW43143KMLGT Infineon Technologies Infineon-CYW43143_Single_Chip_IEEE_802.11_b_g_n_MAC_PHY_Radio_with_USB_SDIO_Host_Interface_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee21f67687b&utm_source=cypress&utm_medium=referral& Description: IC RF TXRX+MCU WIFI 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 448kB RAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 1.2V ~ 3.6V
Power - Output: 21dBm
Protocol: 802.11b/g/n
Current - Receiving: 68mA ~ 94mA
Data Rate (Max): 150Mbps
Current - Transmitting: 368mA ~ 427mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 19
RF Family/Standard: WiFi
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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CYW43242KFFBGT Infineon Technologies BCM43242_RevD_Sep21%2C2016.pdf Description: IC RF TXRX+MCU BLUTOOTH 252TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 252-TFBGA, FCBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -10°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 13dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Current - Receiving: 23mA
Data Rate (Max): 3Mbps
Current - Transmitting: 23mA
Supplier Device Package: 252-FCFBGA (10x10)
GPIO: 13
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, PWM, SPI, UART, USB
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW43340HKUBGT CYW43340HKUBGT Infineon Technologies Description: IC RF TXRX+MCU BLUTOOTH 141UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 141-UFBGA, WLBGA
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 11dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Current - Receiving: 44.4mA ~ 57.7mA
Data Rate (Max): 150Mbps
Current - Transmitting: 254mA ~ 325mA
Supplier Device Package: 141-WLBGA (5.67x4.47)
GPIO: 8
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW4334WKUBGT Infineon Technologies Description: IC RF TXRX+MCU BLUTOOTH 109UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 109-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 11dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 39mA
Data Rate (Max): 150Mbps
Current - Transmitting: 60mA
Supplier Device Package: 109-WLBGA (4.08x4.48)
GPIO: 8
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW4339XKUBGT CYW4339XKUBGT Infineon Technologies download Description: IC RF TXRX+MCU BLUTOOTH 145UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 145-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 13dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Current - Receiving: 110mA
Data Rate (Max): 3Mbps
Current - Transmitting: 340mA
Supplier Device Package: 145-WLBGA (4.87x5.41)
GPIO: 9
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW43438KUBGT CYW43438KUBGT Infineon Technologies download Description: IC RF TXRX+MCU BLE 63WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLBGA
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 21dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 37mA ~ 41mA
Data Rate (Max): 54Mbps
Current - Transmitting: 260mA ~ 320mA
Supplier Device Package: 63-WLBGA (2.87x4.87)
GPIO: 5
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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CYW4343W1KUBGT Infineon Technologies Infineon-CYW4334WKUBGT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1f02f680f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC RF TXRX+MCU BLUETOOTH 74UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 74-UFBGA, WLBGA
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 21dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 37mA ~ 41mA
Data Rate (Max): 54Mbps
Current - Transmitting: 260mA ~ 320mA
Supplier Device Package: 74-WLBGA (4.87x2.87)
GPIO: 5
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I²S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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CYW43455XKUBGT Infineon Technologies Infineon-CYW43455_Single-Chip_5G_WiFi_IEEE_802.11n_ac_MAC_Baseband_Radio_with_Integrated_Bluetooth_5.0_Datasheet-AdditionalTechnicalInformation-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee226686889 Description: IC RF TXRX+MCU BLUTOOTH 140UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 140-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Current - Receiving: 55mA
Data Rate (Max): 433.3Mbps
Current - Transmitting: 400mA
Supplier Device Package: 140-WLBGA (4.47x5.27)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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BCM920737_LE_KIT Infineon Technologies Description: WICED SMART DEVELOPMENT KIT WIT
Packaging: Bulk
For Use With/Related Products: BCM20737
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
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BCM89359CUBGT Infineon Technologies Description: 802.11AC HT80 RSDB + BT4.1
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IPAN60R650CEXKSA1 IPAN60R650CEXKSA1 Infineon Technologies Infineon-IPAN60R650CE-DS-v02_00-EN.pdf?fileId=5546d46254e133b40154e712b822183d Description: MOSFET N-CH 600V 9.9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IPAN60R800CEXKSA1 IPAN60R800CEXKSA1 Infineon Technologies Infineon-IPAN60R800CE-DS-v02_00-EN.pdf?fileId=5546d46254bdc4f50154c95b5f3a68c2 Description: MOSFET N-CH 600V 8.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
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IPS70R2K0CEAKMA1 IPS70R2K0CEAKMA1 Infineon Technologies Infineon-IPS70R2K0CE-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153d13b95853c7d Description: MOSFET N-CH 700V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 100 V
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AUIPS7141RTRL AUIPS7141RTRL Infineon Technologies IRSDS10649-1.pdf?t.download=true&u=5oefqw Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
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AUIRLS8409-7TRL AUIRLS8409-7TRL Infineon Technologies auirls8409-7p.pdf?fileId=5546d462533600a4015355bef40e1593 Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16488 pF @ 25 V
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AUIRS20162STR AUIRS20162STR Infineon Technologies AUIRS20162S.pdf Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Voltage - Supply: 4.4V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 200ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 250mA, 250mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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IPS021STRL IPS021STRL Infineon Technologies IPS021%28S%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-2
Fault Protection: Current Limiting (Fixed), Over Temperature
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IPS031R IPS031R Infineon Technologies IPS031R.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
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IPS031RTRL IPS031RTRL Infineon Technologies IPS031R.pdf Description: IC PWR SWITCH N-CHAN 1:1 TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
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IPS511STRL IPS511STRL Infineon Technologies IPS511%28S%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
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IPS521STRL IPS521STRL Infineon Technologies IPS521%28S%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 55mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.9A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
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IPS5451STRL IPS5451STRL Infineon Technologies IPS5451%28S%29.pdf Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
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BSP320SH6327XTSA1 Infineon-BSP320S-DS-v02_05-en.pdf?fileId=db3a30433b47825b013b515cf1f42949
BSP320SH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 2.9A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Tj)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: PG-SOT223-4
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 582 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+85.51 грн
10+51.62 грн
100+33.94 грн
500+24.70 грн
Мінімальне замовлення: 4
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BSS138NH6433XTMA1 Infineon-BSS138N-DS-v02_86-en.pdf?fileId=db3a304330f68606013104d944d53efb
BSS138NH6433XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 26µA
Supplier Device Package: PG-SOT23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8117 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+13.15 грн
38+8.39 грн
100+5.47 грн
500+5.04 грн
1000+4.02 грн
2000+3.94 грн
5000+3.37 грн
Мінімальне замовлення: 25
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BSS214NWH6327XTSA1 Infineon-BSS214NW-DS-v02_02-en.pdf?fileId=db3a30431b3e89eb011b695aebc01bde
BSS214NWH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 1.5A SOT323-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
Supplier Device Package: PG-SOT323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 143 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 74738 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+18.91 грн
27+11.80 грн
100+7.41 грн
500+5.79 грн
1000+5.28 грн
Мінімальне замовлення: 18
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BSZ150N10LS3GATMA1 Infineon-BSZ150N10LS3_G-DS-v02_02-en.pdf?fileId=db3a30433c8a9179013c8aa12472000f
BSZ150N10LS3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 33µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
на замовлення 6123 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+127.44 грн
10+83.92 грн
100+59.11 грн
500+47.17 грн
1000+45.01 грн
Мінімальне замовлення: 3
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IPB011N04NGATMA1 IPB011N04N_rev1.0.pdf?folderId=db3a3043163797a6011643468e7505a4&fileId=db3a3043163797a601164373e07005f8
IPB011N04NGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 20 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPD038N06N3GATMA1 IPD038N06N3_Rev1.01.pdf?folderId=db3a3043132679fb0113346bdc4505a3&fileId=db3a304317a7483601181bf8dae11675
IPD038N06N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 30 V
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+205.54 грн
10+127.47 грн
100+87.55 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD068N10N3GATMA1 Infineon-IPD068N10N3G-DS-v02_02-en.pdf?fileId=db3a30431ce5fb52011d1eb7aeb615d1
IPD068N10N3GATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 90A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
на замовлення 8128 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+84.68 грн
10+70.15 грн
100+69.49 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD33CN10NGATMA1 Infineon-IPP35CN10N-DS-v01_91-en.pdf?fileId=db3a304412b407950112b42b457b44b1
IPD33CN10NGATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 27A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 27A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 4V @ 29µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
на замовлення 28538 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+109.35 грн
10+58.51 грн
100+41.96 грн
500+33.67 грн
1000+31.61 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD80R1K0CEATMA1 Infineon-IPX80R1K0CE-DS-v02_01-en.pdf?fileId=db3a304340155f3d01402ebac5992590
IPD80R1K0CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 5.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 100 V
на замовлення 4554 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+147.17 грн
10+97.78 грн
100+67.26 грн
500+50.25 грн
1000+46.12 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPN60R2K1CEATMA1 Infineon-IPN60R2K1CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af64ab85b44
IPN60R2K1CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.7A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 2.1Ohm @ 800mA, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 140 pF @ 100 V
на замовлення 63000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+11.88 грн
6000+10.48 грн
9000+9.56 грн
15000+8.86 грн
21000+8.55 грн
30000+8.41 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPN60R3K4CEATMA1 Infineon-IPN60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af659125b4d
IPN60R3K4CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+10.65 грн
6000+9.45 грн
9000+7.97 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPN70R1K5CEATMA1 Infineon-IPN70R1K5CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547aff80a65b6f
IPN70R1K5CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 5.4A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+19.88 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IPA80R1K4CEXKSA2 Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43
IPA80R1K4CEXKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 3.9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+136.48 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPAN50R500CEXKSA1 Infineon-IPAN50R500CE-DS-v02_01-EN.pdf?fileId=5546d46254e133b40154e74070a8194e
IPAN50R500CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 11.1A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.1A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 2.3A, 13V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 433 pF @ 100 V
на замовлення 406 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+125.79 грн
50+57.81 грн
100+51.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPAN65R650CEXKSA1 Infineon-IPAN65R650CE-DS-v02_00-EN.pdf?fileId=5546d46254e133b40154e76e439a1b24
IPAN65R650CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 10.1A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.1A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 210µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+97.02 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPS70R950CEAKMA1 Infineon-IPD70R950CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a32b85797d3c
IPS70R950CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 7.4A TO251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPD70R1K4CEAUMA1 Infineon-IPD70R1K4CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a2a2125c7af1
IPD70R1K4CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 5.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 130µA
Supplier Device Package: PG-TO252-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
на замовлення 14900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.26 грн
10+55.18 грн
100+36.32 грн
500+26.47 грн
1000+24.02 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IPD70R950CEAUMA1 Infineon-IPD70R950CE-DS-v02_00-EN.pdf?fileId=5546d462533600a40153a32b85797d3c
IPD70R950CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 7.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 1.5A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 328 pF @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
IPN60R3K4CEATMA1 Infineon-IPN60R3K4CE-DS-v02_00-EN.pdf?fileId=5546d46253f6505701547af659125b4d
IPN60R3K4CEATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 2.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Power Dissipation (Max): 5W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 40µA
Supplier Device Package: PG-SOT223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 100 V
на замовлення 18201 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+46.86 грн
12+28.34 грн
100+18.18 грн
500+12.94 грн
1000+11.62 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
IPD50R380CEAUMA1 Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38
IPD50R380CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 14.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+25.38 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD50R380CEAUMA1 Infineon-IPD50R380CE-DS-v02_01-en.pdf?fileId=db3a30433ecb86d4013ed0a2ef580f38
IPD50R380CEAUMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 14.1A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.1A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 13V
Power Dissipation (Max): 98W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 260µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 13V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 584 pF @ 100 V
на замовлення 17989 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.95 грн
10+63.26 грн
100+43.36 грн
500+32.03 грн
1000+29.20 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
FM25040B-GA1TR
FM25040B-GA1TR
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT SPI 14MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 14 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GP11FAIR12 S29GLyyyP_Dec-16-2015.pdf
S29GL01GP11FAIR12
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S29GL01GP11FFIR23 S29GLyyyP_Dec-16-2015.pdf
S29GL01GP11FFIR23
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 110ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S29GL01GP12FAI020 S29GLyyyP_Dec-16-2015.pdf
S29GL01GP12FAI020
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 120ns
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S29GL512P10FAIR12 S29GLyyyP_Dec-16-2015.pdf
S29GL512P10FAIR12
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Bulk
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (11x13)
Write Cycle Time - Word, Page: 100ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+676.64 грн
10+605.19 грн
25+586.66 грн
50+537.38 грн
100+524.32 грн
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FM25040B-GA1
FM25040B-GA1
Виробник: Infineon Technologies
Description: IC FRAM 4KBIT SPI 14MHZ 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 14 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Memory Interface: SPI
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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IR2214SSTRPBF Infineon-IR2x14SS-DS-v01_00-EN.pdf?fileId=5546d46269e1c019016a4a5a8fa04a9b
IR2214SSTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 24SSOP
Packaging: Cut Tape (CT)
Package / Case: 24-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11.5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: 24-SSOP
Rise / Fall Time (Typ): 24ns, 7ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 2A, 3A
DigiKey Programmable: Not Verified
на замовлення 10097 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+450.55 грн
10+333.55 грн
25+308.42 грн
100+263.55 грн
250+251.20 грн
500+243.75 грн
1000+233.74 грн
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IR3447MTRPBF ir3447m.pdf?fileId=5546d462533600a4015355cc97101723
IR3447MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 25A 35PQFN
Packaging: Cut Tape (CT)
Package / Case: 35-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 35-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 5V
Voltage - Output (Min/Fixed): 0.6V
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IR3651STRPBF ir3651spbf.pdf?fileId=5546d462533600a4015355d108ff178e
IR3651STRPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR BUCK 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 400kHz
Topology: Buck
Voltage - Supply (Vcc/Vdd): 4.5V ~ 13.2V
Supplier Device Package: 14-SOIC
Synchronous Rectifier: Yes
Control Features: Current Limit, Enable, Soft Start
Output Phases: 1
Duty Cycle (Max): 80%
Clock Sync: Yes
Number of Outputs: 1
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IRS2334MTRPBF irs2334pbf.pdf?fileId=5546d462533600a40153567aa9fe280b
IRS2334MTRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28MLPQ
Packaging: Cut Tape (CT)
Package / Case: 28-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-MLPQ (5x5)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+152.10 грн
10+108.39 грн
25+98.84 грн
100+82.93 грн
250+78.23 грн
500+75.40 грн
1000+71.88 грн
Мінімальне замовлення: 3
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CYW20707UA1KFFB1G download
CYW20707UA1KFFB1G
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20707UA1KFFB4G Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_
CYW20707UA1KFFB4G
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tray
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20707UA1KFFB4GT Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_
CYW20707UA1KFFB4GT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 49FCBGA
Packaging: Tape & Reel (TR)
Package / Case: 49-VFBGA, FCBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 49-FCBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20707VA1PKWBGT Infineon-CYW20707_Bluetooth_SoC_for_Embedded_Wireless_Devices_Datasheet-AdditionalTechnicalInformation-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1ecf86806&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_
CYW20707VA1PKWBGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 36WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 36-UFBGA, WLBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 9dBm
Protocol: Bluetooth v4.2
Current - Receiving: 26.4mA
Data Rate (Max): 2Mbps
Current - Transmitting: 60mA
Supplier Device Package: 36-WLBGA (2.51x2.77)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20710A1KUBXGT Infineon-CYW20710_Single-Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1f2086813&utm_source=cypress&utm_medium=referral&utm_campaign=202
CYW20710A1KUBXGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 42WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 42-UFBGA, WLBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 42-WLBGA (3.02x2.51)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW20733A3KFB2GT CYW20733_RevS_11-9-17.pdf
CYW20733A3KFB2GT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 121TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 121-TFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V
Power - Output: 10dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.4mA
Current - Transmitting: 47mA
Supplier Device Package: 121-FBGA (9x9)
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW20735KFBG PdfFile_564780.pdf
CYW20735KFBG
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 111FBGA
Packaging: Tray
Package / Case: 111-VFBGA
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 3.3V
Power - Output: 10dBm
Protocol: Bluetooth v4.2
Current - Receiving: 8mA
Data Rate (Max): 2Mbps
Current - Transmitting: 18mA
Supplier Device Package: 111-FBGA (9x9)
GPIO: 111
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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CYW43143KMLGT Infineon-CYW43143_Single_Chip_IEEE_802.11_b_g_n_MAC_PHY_Radio_with_USB_SDIO_Host_Interface_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee21f67687b&utm_source=cypress&utm_medium=referral&
CYW43143KMLGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU WIFI 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Sensitivity: -97dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 256kB ROM, 448kB RAM
Type: TxRx + MCU
Operating Temperature: 0°C ~ 65°C
Voltage - Supply: 1.2V ~ 3.6V
Power - Output: 21dBm
Protocol: 802.11b/g/n
Current - Receiving: 68mA ~ 94mA
Data Rate (Max): 150Mbps
Current - Transmitting: 368mA ~ 427mA
Supplier Device Package: 56-QFN (7x7)
GPIO: 19
RF Family/Standard: WiFi
Serial Interfaces: I2C, I2S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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CYW43242KFFBGT BCM43242_RevD_Sep21%2C2016.pdf
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 252TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 252-TFBGA, FCBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -10°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 13dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Current - Receiving: 23mA
Data Rate (Max): 3Mbps
Current - Transmitting: 23mA
Supplier Device Package: 252-FCFBGA (10x10)
GPIO: 13
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, PWM, SPI, UART, USB
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW43340HKUBGT
CYW43340HKUBGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 141UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 141-UFBGA, WLBGA
Sensitivity: -94.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 11dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.0
Current - Receiving: 44.4mA ~ 57.7mA
Data Rate (Max): 150Mbps
Current - Transmitting: 254mA ~ 325mA
Supplier Device Package: 141-WLBGA (5.67x4.47)
GPIO: 8
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, I2S, JTAG, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW4334WKUBGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 109UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 109-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 11dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 39mA
Data Rate (Max): 150Mbps
Current - Transmitting: 60mA
Supplier Device Package: 109-WLBGA (4.08x4.48)
GPIO: 8
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW4339XKUBGT download
CYW4339XKUBGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 145UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 145-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 13dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Current - Receiving: 110mA
Data Rate (Max): 3Mbps
Current - Transmitting: 340mA
Supplier Device Package: 145-WLBGA (4.87x5.41)
GPIO: 9
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Obsolete
DigiKey Programmable: Not Verified
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CYW43438KUBGT download
CYW43438KUBGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 63WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 63-UFBGA, WLBGA
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 21dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 37mA ~ 41mA
Data Rate (Max): 54Mbps
Current - Transmitting: 260mA ~ 320mA
Supplier Device Package: 63-WLBGA (2.87x4.87)
GPIO: 5
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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CYW4343W1KUBGT Infineon-CYW4334WKUBGT-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1f02f680f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 74UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 74-UFBGA, WLBGA
Sensitivity: -99dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 640kB ROM, 512kB SRAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 21dBm
Protocol: 802.11b/g/n, Bluetooth v4.0
Current - Receiving: 37mA ~ 41mA
Data Rate (Max): 54Mbps
Current - Transmitting: 260mA ~ 320mA
Supplier Device Package: 74-WLBGA (4.87x2.87)
GPIO: 5
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I²S, SPI, UART
Part Status: Active
DigiKey Programmable: Not Verified
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CYW43455XKUBGT Infineon-CYW43455_Single-Chip_5G_WiFi_IEEE_802.11n_ac_MAC_Baseband_Radio_with_Integrated_Bluetooth_5.0_Datasheet-AdditionalTechnicalInformation-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee226686889
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUTOOTH 140UFBGA
Packaging: Tape & Reel (TR)
Package / Case: 140-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Current - Receiving: 55mA
Data Rate (Max): 433.3Mbps
Current - Transmitting: 400mA
Supplier Device Package: 140-WLBGA (4.47x5.27)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
Part Status: Not For New Designs
DigiKey Programmable: Not Verified
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BCM920737_LE_KIT
Виробник: Infineon Technologies
Description: WICED SMART DEVELOPMENT KIT WIT
Packaging: Bulk
For Use With/Related Products: BCM20737
Frequency: 2.4GHz
Type: Transceiver; Bluetooth® Smart 4.x Low Energy (BLE)
Supplied Contents: Board(s)
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BCM89359CUBGT
Виробник: Infineon Technologies
Description: 802.11AC HT80 RSDB + BT4.1
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IPAN60R650CEXKSA1 Infineon-IPAN60R650CE-DS-v02_00-EN.pdf?fileId=5546d46254e133b40154e712b822183d
IPAN60R650CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 9.9A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 2.4A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 200µA
Supplier Device Package: PG-TO220-FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 100 V
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IPAN60R800CEXKSA1 Infineon-IPAN60R800CE-DS-v02_00-EN.pdf?fileId=5546d46254bdc4f50154c95b5f3a68c2
IPAN60R800CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 8.4A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 2A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: PG-TO220-FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 373 pF @ 100 V
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IPS70R2K0CEAKMA1 Infineon-IPS70R2K0CE-DS-v02_00-EN.pdf?fileId=5546d46253a864fe0153d13b95853c7d
IPS70R2K0CEAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 4A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 1A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 100 V
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AUIPS7141RTRL IRSDS10649-1.pdf?t.download=true&u=5oefqw
AUIPS7141RTRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-5
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q100
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AUIRLS8409-7TRL auirls8409-7p.pdf?fileId=5546d462533600a4015355bef40e1593
AUIRLS8409-7TRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 240A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PG-TO263-7
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 266 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16488 pF @ 25 V
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AUIRS20162STR AUIRS20162S.pdf
AUIRS20162STR
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Voltage - Supply: 4.4V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 150 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 200ns, 200ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 250mA, 250mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
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IPS021STRL IPS021%28S%29.pdf
IPS021STRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO263-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO263-2
Fault Protection: Current Limiting (Fixed), Over Temperature
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IPS031R IPS031R.pdf
IPS031R
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
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IPS031RTRL IPS031R.pdf
IPS031RTRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.3A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3
Fault Protection: Current Limiting (Fixed), Over Temperature
Part Status: Obsolete
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IPS511STRL IPS511%28S%29.pdf
IPS511STRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 110mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
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IPS521STRL IPS521%28S%29.pdf
IPS521STRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 55mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 35V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.9A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
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IPS5451STRL IPS5451%28S%29.pdf
IPS5451STRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 5.5V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: D2Pak (SMD-220 5-Lead)
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
Part Status: Obsolete
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