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BC857BWE6327 BC857BWE6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 333000 шт:
термін постачання 21-31 дні (днів)
8955+2.17 грн
Мінімальне замовлення: 8955
В кошику  од. на суму  грн.
BC857BWH6327 BC857BWH6327 Infineon Technologies INFNS16508-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
6512+3.88 грн
Мінімальне замовлення: 6512
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IR2154 IR2154 Infineon Technologies IR2154.pdf Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IR2154S IR2154S Infineon Technologies IR2154.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IPB120N06S4H1ATMA2 IPB120N06S4H1ATMA2 Infineon Technologies Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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TDA5255 Infineon Technologies Description: ASK/FSK 434 MHZ WIRELESS TRANSVR
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Sensitivity: -109dBm
Mounting Type: Surface Mount
Frequency: 434MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 5.5V
Power - Output: 13dBm
Current - Receiving: 8.6mA ~ 9.5mA
Data Rate (Max): 100kbps
Current - Transmitting: 5.2mA ~ 17.4mA
Supplier Device Package: PG-TSSOP-38
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I²C, SPI
Part Status: Active
DigiKey Programmable: Not Verified
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IFX007TAUMA1 IFX007TAUMA1 Infineon Technologies IFX007T_Rev1.0_2018-02-21.pdf Description: IC HALF BRIDGE DRVR 55A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 55A
Technology: Power MOSFET
Voltage - Load: 8V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2+240.15 грн
10+174.02 грн
25+159.62 грн
100+134.90 грн
250+127.81 грн
500+123.53 грн
Мінімальне замовлення: 2
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S26KL512SDABHB020 S26KL512SDABHB020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3354 шт:
термін постачання 21-31 дні (днів)
1+771.55 грн
10+689.42 грн
25+668.02 грн
50+611.76 грн
100+596.73 грн
338+570.74 грн
676+552.46 грн
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CY14B104NA-ZS45XE CY14B104NA-ZS45XE Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.63V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 2553 шт:
термін постачання 21-31 дні (днів)
1+1272.29 грн
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CY14B104NA-BA20XI CY14B104NA-BA20XI Infineon Technologies download Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-BA45XET CY14B104NA-BA45XET Infineon Technologies download Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-ZS25XET CY14B104NA-ZS25XET Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-ZS45XE CY14B104NA-ZS45XE Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.63V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-ZS25XE CY14B104NA-ZS25XE Infineon Technologies download Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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DF23MR12W1M1PB11BPSA1 DF23MR12W1M1PB11BPSA1 Infineon Technologies Infineon-DF23MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017153f0de295eb5 Description: MOSFET 2N-CH 1200V 25A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
1+6490.89 грн
В кошику  од. на суму  грн.
SIPC03S2N03LX3MA1 Infineon Technologies Description: LV POWER MOS
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BSB012N03LX3 G BSB012N03LX3 G Infineon Technologies BSB012N03LX3G.pdf Description: MOSFET N-CH 30V 39A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V
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T830N12TOFXPSA1 T830N12TOFXPSA1 Infineon Technologies T830N.pdf Description: SCR MODULE 1800V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 844 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
3+8729.17 грн
Мінімальне замовлення: 3
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IRFR1018EPBF-INF Infineon Technologies Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
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CY2304NZZXC-1 CY2304NZZXC-1 Infineon Technologies Infineon-CY2304NZ_Four_Output_PCI-X_and_General_Purpose_Buffer-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcd7a92ea3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK ZDB 4OUT 140MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 140MHz
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
2+172.87 грн
Мінімальне замовлення: 2
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BTS409L1CHIPX2LA1 BTS409L1CHIPX2LA1 Infineon Technologies Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Part Status: Active
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TLE4473GV53AUMA2 TLE4473GV53AUMA2 Infineon Technologies Infineon-TLE4473-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595f72a5831f31 Description: IC REG LINEAR 3.3V/5V DSO12-6
Packaging: Tape & Reel (TR)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 180mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 265 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: P-DSO-12-6
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 65dB (100Hz), 65dB (100Hz)
Voltage Dropout (Max): -, 0.6V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Current - Supply (Max): 20 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
1000+167.98 грн
2000+158.00 грн
3000+156.12 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
TLE4473GV53AUMA2 TLE4473GV53AUMA2 Infineon Technologies Infineon-TLE4473-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595f72a5831f31 Description: IC REG LINEAR 3.3V/5V DSO12-6
Packaging: Cut Tape (CT)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 180mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 265 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: P-DSO-12-6
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 65dB (100Hz), 65dB (100Hz)
Voltage Dropout (Max): -, 0.6V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Current - Supply (Max): 20 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5026 шт:
термін постачання 21-31 дні (днів)
2+299.76 грн
10+217.89 грн
25+200.32 грн
100+169.92 грн
250+161.28 грн
500+156.08 грн
Мінімальне замовлення: 2
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TLE92623QXXUMA1 TLE92623QXXUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
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IRFR3709ZTRLPBF IRFR3709ZTRLPBF Infineon Technologies irfr3709zpbf.pdf?fileId=5546d462533600a401535631a47a20c5 Description: MOSFET N-CH 30V 86A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
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BTN7960BAUMA1 BTN7960BAUMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IC MOTOR DRIVER 8V-18V TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 47A
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-TO263-7-1
Motor Type - AC, DC: Brushed DC
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BTS282ZDELCO BTS282ZDELCO Infineon Technologies INFNS13361-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: P-TO220-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
товару немає в наявності
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IRFS7430TRLPBF IRFS7430TRLPBF Infineon Technologies Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
товару немає в наявності
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IRFS7430TRLPBF IRFS7430TRLPBF Infineon Technologies Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
на замовлення 243 шт:
термін постачання 21-31 дні (днів)
2+278.47 грн
10+175.74 грн
100+122.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB65R660CFDAATMA1 IPB65R660CFDAATMA1 Infineon Technologies INFN-S-A0003823031-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
на замовлення 4006 шт:
термін постачання 21-31 дні (днів)
2+206.94 грн
10+128.42 грн
100+88.03 грн
500+66.40 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB65R660CFDATMA1 IPB65R660CFDATMA1 Infineon Technologies IPx65R660CFD.pdf Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
3+133.70 грн
10+115.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BAS1602VH6327XTSA1 BAS1602VH6327XTSA1 Infineon Technologies bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff Description: DIODE GEN PURP 80V 200MA SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 23795 шт:
термін постачання 21-31 дні (днів)
12+29.81 грн
17+19.93 грн
100+9.73 грн
500+7.61 грн
1000+5.29 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BAS7002VH6327XTSA1 BAS7002VH6327XTSA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 70V 70MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7627 шт:
термін постачання 21-31 дні (днів)
22+16.18 грн
36+9.27 грн
100+8.79 грн
500+6.10 грн
1000+5.40 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
BAT6202VH6327XTSA1 BAT6202VH6327XTSA1 Infineon Technologies Infineon-BAT62-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017eb4959b1821f7 Description: DIODE SCHOTTKY 40V 20MA PGSC7921
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+7.58 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAT6202VH6327XTSA1 BAT6202VH6327XTSA1 Infineon Technologies Infineon-BAT62-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017eb4959b1821f7 Description: DIODE SCHOTTKY 40V 20MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 5905 шт:
термін постачання 21-31 дні (днів)
11+33.21 грн
18+19.11 грн
100+11.38 грн
500+10.17 грн
1000+9.98 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BBY5602VH6327XTSA1 BBY5602VH6327XTSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: DIODE VARACTOR 10V SNGL PG-SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SC79-2-1
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
на замовлення 2920 шт:
термін постачання 21-31 дні (днів)
29+11.92 грн
33+10.09 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
IPB80N08S207ATMA1 IPB80N08S207ATMA1 Infineon Technologies Infineon-IPP_B_I80N08S2_07_GREEN-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426df983adf&ack=t Description: MOSFET N-CH 75V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPB80N08S207ATMA1 IPB80N08S207ATMA1 Infineon Technologies Infineon-IPP_B_I80N08S2_07_GREEN-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426df983adf&ack=t Description: MOSFET N-CH 75V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 389 шт:
термін постачання 21-31 дні (днів)
1+430.91 грн
10+276.85 грн
100+198.96 грн
В кошику  од. на суму  грн.
IPD70N04S307ATMA1 IPD70N04S307ATMA1 Infineon Technologies INFNS11352-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 70A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
товару немає в наявності
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IRFI7536GPBF IRFI7536GPBF Infineon Technologies irfi7536gpbf.pdf Description: MOSFET N-CH 60V 86A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220 Full Pack
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V
на замовлення 1330 шт:
термін постачання 21-31 дні (днів)
175+140.22 грн
Мінімальне замовлення: 175
В кошику  од. на суму  грн.
TLE92623BQXV33XUMA1 TLE92623BQXV33XUMA1 Infineon Technologies Infineon-TLE9262-3BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc80160978ed9493954 Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Grade: Automotive
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+152.30 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE92623BQXV33XUMA1 TLE92623BQXV33XUMA1 Infineon Technologies Infineon-TLE9262-3BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc80160978ed9493954 Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Grade: Automotive
на замовлення 9029 шт:
термін постачання 21-31 дні (днів)
2+304.02 грн
10+221.66 грн
25+203.80 грн
100+172.90 грн
250+164.14 грн
500+158.86 грн
1000+151.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE92623BQXXUMA1 TLE92623BQXXUMA1 Infineon Technologies Infineon-TLE9262-3BQX-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609785aa013951 Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Grade: Automotive
товару немає в наявності
В кошику  од. на суму  грн.
TLE92623BQXXUMA1 TLE92623BQXXUMA1 Infineon Technologies Infineon-TLE9262-3BQX-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609785aa013951 Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Grade: Automotive
на замовлення 2120 шт:
термін постачання 21-31 дні (днів)
2+304.02 грн
10+221.66 грн
25+203.80 грн
100+172.90 грн
250+164.14 грн
500+158.86 грн
1000+151.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB50R199CP IPB50R199CP Infineon Technologies INFNS15809-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 500V 17A TO263-3-2
товару немає в наявності
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IRFHM8334TRPBF-INF IRFHM8334TRPBF-INF Infineon Technologies IRSDS19389-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 13A/43A 8PQFN DL
товару немає в наявності
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T2563NH80TOHXOSA1 T2563NH80TOHXOSA1 Infineon Technologies Infineon-T2563NH-DS-v11_00-en_de.pdf?fileId=db3a304412b407950112b430fab552bb Description: SCR 8KV 3600A BG-T17240L-1
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: 120°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Current - On State (It (AV)) (Max): 3330 A
Voltage - On State (Vtm) (Max): 2.95 V
Supplier Device Package: BG-T17240L-1
Current - On State (It (RMS)) (Max): 3600 A
Voltage - Off State: 8 kV
товару немає в наявності
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IRF7410TRPBF-1 IRF7410TRPBF-1 Infineon Technologies IRF7410TRPbF_10-16-14.pdf Description: MOSFET P-CH 12V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
товару немає в наявності
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BSL296SNH6327XTSA1 BSL296SNH6327XTSA1 Infineon Technologies BSL296SN.pdf Description: MOSFET N-CH 100V 1.4A TSOP-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 108300 шт:
термін постачання 21-31 дні (днів)
1011+22.07 грн
Мінімальне замовлення: 1011
В кошику  од. на суму  грн.
ICE3B2065JFKLA1 ICE3B2065JFKLA1 Infineon Technologies Infineon-ICE3BXX65J-DS-v02_09-en.pdf?fileId=db3a3043394427e4013953109b207cb2 Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 57 W
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)
162+133.62 грн
Мінімальне замовлення: 162
В кошику  од. на суму  грн.
IRFR2307ZTRLPBF IRFR2307ZTRLPBF Infineon Technologies irfr2307zpbf.pdf?fileId=5546d462533600a40153562d98be2074 Description: MOSFET N-CH 75V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
на замовлення 7703 шт:
термін постачання 21-31 дні (днів)
2+178.84 грн
10+110.71 грн
100+75.26 грн
500+56.41 грн
1000+51.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TZ240N34KOFHPSA1 TZ240N34KOFHPSA1 Infineon Technologies Infineon-TZ240N-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42fd8bf4e00 Description: SCR MODULE 3.4KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6100A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 240 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 3.4 kV
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TZ240N36KOFS1HPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Packaging: Tray
Part Status: Obsolete
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TZ240N36KOFS2HPSA1 Infineon Technologies Description: THYR / DIODE MODULE DK
Packaging: Tray
Part Status: Obsolete
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TZ240N32KOFHPSA1 Infineon Technologies TZ240N.pdf Description: SCR MODULE 3.2KV 700A MODULE
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IPD50N06S4L08ATMA2 IPD50N06S4L08ATMA2 Infineon Technologies INFNS14103-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5220 шт:
термін постачання 21-31 дні (днів)
3+121.78 грн
10+74.71 грн
100+50.02 грн
500+37.00 грн
1000+33.81 грн
Мінімальне замовлення: 3
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CY7C1312KV18-300BZXI CY7C1312KV18-300BZXI Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+873.74 грн
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CY7C15632KV18-450BZXI CY7C15632KV18-450BZXI Infineon Technologies download Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
на замовлення 365 шт:
термін постачання 21-31 дні (днів)
1+8814.90 грн
В кошику  од. на суму  грн.
IPD90R1K2C3ATMA2 IPD90R1K2C3ATMA2 Infineon Technologies Infineon-IPD90R1K2C3-DS-v02_00-en.pdf?fileId=db3a30433f12d084013f13d4a88e0220 Description: MOSFET N-CH 900V 5.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
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BCR523UE6327 BCR523UE6327 Infineon Technologies INFNS16394-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 330mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 100MHz
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: PG-SC74-6-1
Part Status: Active
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BC857BWE6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC857BWE6327
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A PG-SOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 333000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8955+2.17 грн
Мінімальне замовлення: 8955
В кошику  од. на суму  грн.
BC857BWH6327 INFNS16508-1.pdf?t.download=true&u=5oefqw
BC857BWH6327
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.1A SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323-3-1
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6512+3.88 грн
Мінімальне замовлення: 6512
В кошику  од. на суму  грн.
IR2154 IR2154.pdf
IR2154
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IR2154S IR2154.pdf
IR2154S
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Part Status: Obsolete
DigiKey Programmable: Not Verified
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IPB120N06S4H1ATMA2 Infineon-I120N06S4_H1-DS-v01_00-en.pdf?fileId=db3a30431ff988150120388c9cf60caf
IPB120N06S4H1ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 21900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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TDA5255
Виробник: Infineon Technologies
Description: ASK/FSK 434 MHZ WIRELESS TRANSVR
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Sensitivity: -109dBm
Mounting Type: Surface Mount
Frequency: 434MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 5.5V
Power - Output: 13dBm
Current - Receiving: 8.6mA ~ 9.5mA
Data Rate (Max): 100kbps
Current - Transmitting: 5.2mA ~ 17.4mA
Supplier Device Package: PG-TSSOP-38
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I²C, SPI
Part Status: Active
DigiKey Programmable: Not Verified
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IFX007TAUMA1 IFX007T_Rev1.0_2018-02-21.pdf
IFX007TAUMA1
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRVR 55A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 40V
Rds On (Typ): 4.7mOhm LS, 5.3mOhm HS
Applications: DC Motors, General Purpose
Current - Output / Channel: 55A
Technology: Power MOSFET
Voltage - Load: 8V ~ 40V
Supplier Device Package: PG-TO263-7-1
Fault Protection: Current Limiting, Open Load Detect, Over Temperature, Short Circuit, UVLO
Load Type: Inductive
Part Status: Active
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+240.15 грн
10+174.02 грн
25+159.62 грн
100+134.90 грн
250+127.81 грн
500+123.53 грн
Мінімальне замовлення: 2
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S26KL512SDABHB020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f
S26KL512SDABHB020
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Part Status: Active
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3354 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+771.55 грн
10+689.42 грн
25+668.02 грн
50+611.76 грн
100+596.73 грн
338+570.74 грн
676+552.46 грн
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CY14B104NA-ZS45XE download
CY14B104NA-ZS45XE
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.63V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 2553 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1272.29 грн
В кошику  од. на суму  грн.
CY14B104NA-BA20XI download
CY14B104NA-BA20XI
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tray
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-BA45XET download
CY14B104NA-BA45XET
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PARALLEL 48FBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 48-FBGA (6x10)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-ZS25XET download
CY14B104NA-ZS25XET
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-ZS45XE download
CY14B104NA-ZS45XE
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.63V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY14B104NA-ZS25XE download
CY14B104NA-ZS25XE
Виробник: Infineon Technologies
Description: IC NVSRAM 4MBIT PAR 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 25ns
Memory Interface: Parallel
Access Time: 25 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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DF23MR12W1M1PB11BPSA1 Infineon-DF23MR12W1M1P_B11-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b7017153f0de295eb5
DF23MR12W1M1PB11BPSA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 1200V 25A AG-EASY1B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1840pF @ 800V
Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
Vgs(th) (Max) @ Id: 5.55V @ 10mA
Supplier Device Package: AG-EASY1B-2
Part Status: Obsolete
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6490.89 грн
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SIPC03S2N03LX3MA1
Виробник: Infineon Technologies
Description: LV POWER MOS
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BSB012N03LX3 G BSB012N03LX3G.pdf
BSB012N03LX3 G
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 39A/180A 2WDSON
Packaging: Tape & Reel (TR)
Package / Case: 3-WDSON
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2, CanPAK M™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16900 pF @ 15 V
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T830N12TOFXPSA1 T830N.pdf
T830N12TOFXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1800V 1500A DO200AB
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 14500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 844 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 1500 A
Voltage - Off State: 1.8 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+8729.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFR1018EPBF-INF
Виробник: Infineon Technologies
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V
товару немає в наявності
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CY2304NZZXC-1 Infineon-CY2304NZ_Four_Output_PCI-X_and_General_Purpose_Buffer-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcd7a92ea3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2304NZZXC-1
Виробник: Infineon Technologies
Description: IC CLK ZDB 4OUT 140MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 140MHz
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Main Purpose: PCI Express (PCIe)
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
PLL: No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+172.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS409L1CHIPX2LA1
BTS409L1CHIPX2LA1
Виробник: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Packaging: Bulk
Part Status: Active
товару немає в наявності
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TLE4473GV53AUMA2 Infineon-TLE4473-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595f72a5831f31
TLE4473GV53AUMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V DSO12-6
Packaging: Tape & Reel (TR)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 180mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 265 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: P-DSO-12-6
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 65dB (100Hz), 65dB (100Hz)
Voltage Dropout (Max): -, 0.6V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Current - Supply (Max): 20 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+167.98 грн
2000+158.00 грн
3000+156.12 грн
Мінімальне замовлення: 1000
В кошику  од. на суму  грн.
TLE4473GV53AUMA2 Infineon-TLE4473-DS-v01_10-EN.pdf?fileId=5546d46258fc0bc101595f72a5831f31
TLE4473GV53AUMA2
Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V DSO12-6
Packaging: Cut Tape (CT)
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA, 180mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 265 µA
Voltage - Input (Max): 42V
Number of Regulators: 2
Supplier Device Package: P-DSO-12-6
Voltage - Output (Min/Fixed): 3.3V, 5V
Control Features: Inhibit, Reset, Watchdog
Part Status: Active
PSRR: 65dB (100Hz), 65dB (100Hz)
Voltage Dropout (Max): -, 0.6V @ 100mA
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Current - Supply (Max): 20 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5026 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+299.76 грн
10+217.89 грн
25+200.32 грн
100+169.92 грн
250+161.28 грн
500+156.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE92623QXXUMA1 fundamentals-of-power-semiconductors
TLE92623QXXUMA1
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
товару немає в наявності
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IRFR3709ZTRLPBF irfr3709zpbf.pdf?fileId=5546d462533600a401535631a47a20c5
IRFR3709ZTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
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BTN7960BAUMA1 fundamentals-of-power-semiconductors
BTN7960BAUMA1
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 8V-18V TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 47A
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-TO263-7-1
Motor Type - AC, DC: Brushed DC
товару немає в наявності
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BTS282ZDELCO INFNS13361-1.pdf?t.download=true&u=5oefqw
BTS282ZDELCO
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-7 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: P-TO220-7-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
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IRFS7430TRLPBF Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d
IRFS7430TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
товару немає в наявності
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IRFS7430TRLPBF Infineon-IRFS7430-DS-v01_00-EN.pdf?fileId=5546d462576f3475015792dbfbd6000d
IRFS7430TRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
на замовлення 243 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+278.47 грн
10+175.74 грн
100+122.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB65R660CFDAATMA1 INFN-S-A0003823031-1.pdf?t.download=true&u=5oefqw
IPB65R660CFDAATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
на замовлення 4006 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+206.94 грн
10+128.42 грн
100+88.03 грн
500+66.40 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB65R660CFDATMA1 IPx65R660CFD.pdf
IPB65R660CFDATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+133.70 грн
10+115.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BAS1602VH6327XTSA1 bas16series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141b93811b03ff
BAS1602VH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 80V 200MA SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 23795 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+29.81 грн
17+19.93 грн
100+9.73 грн
500+7.61 грн
1000+5.29 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BAS7002VH6327XTSA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7002VH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7627 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+16.18 грн
36+9.27 грн
100+8.79 грн
500+6.10 грн
1000+5.40 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
BAT6202VH6327XTSA1 Infineon-BAT62-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017eb4959b1821f7
BAT6202VH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 40V 20MA PGSC7921
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.58 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAT6202VH6327XTSA1 Infineon-BAT62-02V-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017eb4959b1821f7
BAT6202VH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 40V 20MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 5905 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+33.21 грн
18+19.11 грн
100+11.38 грн
500+10.17 грн
1000+9.98 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
BBY5602VH6327XTSA1 fundamentals-of-power-semiconductors
BBY5602VH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE VARACTOR 10V SNGL PG-SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SC79-2-1
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
на замовлення 2920 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
29+11.92 грн
33+10.09 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
IPB80N08S207ATMA1 Infineon-IPP_B_I80N08S2_07_GREEN-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426df983adf&ack=t
IPB80N08S207ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IPB80N08S207ATMA1 Infineon-IPP_B_I80N08S2_07_GREEN-DS-v01_00-en.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b426df983adf&ack=t
IPB80N08S207ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 389 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+430.91 грн
10+276.85 грн
100+198.96 грн
В кошику  од. на суму  грн.
IPD70N04S307ATMA1 INFNS11352-1.pdf?t.download=true&u=5oefqw
IPD70N04S307ATMA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 70A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
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IRFI7536GPBF irfi7536gpbf.pdf
IRFI7536GPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 86A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220 Full Pack
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V
на замовлення 1330 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
175+140.22 грн
Мінімальне замовлення: 175
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TLE92623BQXV33XUMA1 Infineon-TLE9262-3BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc80160978ed9493954
TLE92623BQXV33XUMA1
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Grade: Automotive
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+152.30 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLE92623BQXV33XUMA1 Infineon-TLE9262-3BQX%20V33-DS-v01_00-EN.pdf?fileId=5546d462602a9dc80160978ed9493954
TLE92623BQXV33XUMA1
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Grade: Automotive
на замовлення 9029 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+304.02 грн
10+221.66 грн
25+203.80 грн
100+172.90 грн
250+164.14 грн
500+158.86 грн
1000+151.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE92623BQXXUMA1 Infineon-TLE9262-3BQX-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609785aa013951
TLE92623BQXXUMA1
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Grade: Automotive
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TLE92623BQXXUMA1 Infineon-TLE9262-3BQX-DS-v01_00-EN.pdf?fileId=5546d462602a9dc801609785aa013951
TLE92623BQXXUMA1
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Part Status: Not For New Designs
Grade: Automotive
на замовлення 2120 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+304.02 грн
10+221.66 грн
25+203.80 грн
100+172.90 грн
250+164.14 грн
500+158.86 грн
1000+151.98 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB50R199CP INFNS15809-1.pdf?t.download=true&u=5oefqw
IPB50R199CP
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 17A TO263-3-2
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IRFHM8334TRPBF-INF IRSDS19389-1.pdf?t.download=true&u=5oefqw
IRFHM8334TRPBF-INF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A/43A 8PQFN DL
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T2563NH80TOHXOSA1 Infineon-T2563NH-DS-v11_00-en_de.pdf?fileId=db3a304412b407950112b430fab552bb
T2563NH80TOHXOSA1
Виробник: Infineon Technologies
Description: SCR 8KV 3600A BG-T17240L-1
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: 120°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Current - On State (It (AV)) (Max): 3330 A
Voltage - On State (Vtm) (Max): 2.95 V
Supplier Device Package: BG-T17240L-1
Current - On State (It (RMS)) (Max): 3600 A
Voltage - Off State: 8 kV
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IRF7410TRPBF-1 IRF7410TRPbF_10-16-14.pdf
IRF7410TRPBF-1
Виробник: Infineon Technologies
Description: MOSFET P-CH 12V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
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BSL296SNH6327XTSA1 BSL296SN.pdf
BSL296SNH6327XTSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.4A TSOP-6
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Supplier Device Package: PG-TSOP6-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 108300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1011+22.07 грн
Мінімальне замовлення: 1011
В кошику  од. на суму  грн.
ICE3B2065JFKLA1 Infineon-ICE3BXX65J-DS-v02_09-en.pdf?fileId=db3a3043394427e4013953109b207cb2
ICE3B2065JFKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 57 W
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
162+133.62 грн
Мінімальне замовлення: 162
В кошику  од. на суму  грн.
IRFR2307ZTRLPBF irfr2307zpbf.pdf?fileId=5546d462533600a40153562d98be2074
IRFR2307ZTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
на замовлення 7703 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+178.84 грн
10+110.71 грн
100+75.26 грн
500+56.41 грн
1000+51.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TZ240N34KOFHPSA1 Infineon-TZ240N-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42fd8bf4e00
TZ240N34KOFHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 3.4KV 700A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 6100A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 240 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 3.4 kV
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TZ240N36KOFS1HPSA1
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Part Status: Obsolete
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TZ240N36KOFS2HPSA1
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Part Status: Obsolete
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TZ240N32KOFHPSA1 TZ240N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE 3.2KV 700A MODULE
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IPD50N06S4L08ATMA2 INFNS14103-1.pdf?t.download=true&u=5oefqw
IPD50N06S4L08ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5220 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+121.78 грн
10+74.71 грн
100+50.02 грн
500+37.00 грн
1000+33.81 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY7C1312KV18-300BZXI download
CY7C1312KV18-300BZXI
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 300 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Part Status: Active
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+873.74 грн
В кошику  од. на суму  грн.
CY7C15632KV18-450BZXI download
CY7C15632KV18-450BZXI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
на замовлення 365 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8814.90 грн
В кошику  од. на суму  грн.
IPD90R1K2C3ATMA2 Infineon-IPD90R1K2C3-DS-v02_00-en.pdf?fileId=db3a30433f12d084013f13d4a88e0220
IPD90R1K2C3ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
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BCR523UE6327 INFNS16394-1.pdf?t.download=true&u=5oefqw
BCR523UE6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 330mW
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 100MHz
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: PG-SC74-6-1
Part Status: Active
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