Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123001) > Сторінка 358 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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CY2304NZZXC-1 | Infineon Technologies |
Description: IC CLK ZDB 4OUT 140MHZ 8TSSOPDigiKey Programmable: Not Verified Number of Circuits: 1 PLL: No Supplier Device Package: 8-TSSOP Differential - Input:Output: No/No Ratio - Input:Output: 1:4 Main Purpose: PCI Express (PCIe) Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C Input: LVCMOS, LVTTL Frequency - Max: 140MHz Output: LVCMOS Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Tube |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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BTS409L1CHIPX2LA1 | Infineon Technologies |
Description: AUTOMOTIVE HIGH SIDE SWITCH Part Status: Active Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLE4473GV53AUMA2 | Infineon Technologies |
Description: IC REG LINEAR 3.3V/5V DSO12-6Qualification: AEC-Q100 Grade: Automotive Current - Quiescent (Iq): 265 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 300mA, 180mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad Packaging: Tape & Reel (TR) Current - Supply (Max): 20 mA Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage Voltage Dropout (Max): -, 0.6V @ 100mA PSRR: 65dB (100Hz), 65dB (100Hz) Part Status: Active Control Features: Inhibit, Reset, Watchdog Voltage - Output (Min/Fixed): 3.3V, 5V Supplier Device Package: P-DSO-12-6 Number of Regulators: 2 Voltage - Input (Max): 42V |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
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TLE4473GV53AUMA2 | Infineon Technologies |
Description: IC REG LINEAR 3.3V/5V DSO12-6Qualification: AEC-Q100 Grade: Automotive Voltage - Input (Max): 42V Current - Quiescent (Iq): 265 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C (TJ) Current - Output: 300mA, 180mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad Packaging: Cut Tape (CT) Current - Supply (Max): 20 mA Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage Voltage Dropout (Max): -, 0.6V @ 100mA PSRR: 65dB (100Hz), 65dB (100Hz) Part Status: Active Control Features: Inhibit, Reset, Watchdog Voltage - Output (Min/Fixed): 3.3V, 5V Supplier Device Package: P-DSO-12-6 Number of Regulators: 2 |
на замовлення 5026 шт: термін постачання 21-31 дні (днів) |
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TLE92623QXXUMA1 | Infineon Technologies |
Description: IC INTERFACE SPECIALIZED 48VQFNGrade: Automotive Part Status: Not For New Designs Supplier Device Package: PG-VQFN-48-31 Interface: SPI Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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IRFR3709ZTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 86A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTN7960BAUMA1 | Infineon Technologies |
Description: IC MOTOR DRIVER 8V-18V TO263-7Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 47A Interface: On/Off Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 8V ~ 18V Applications: General Purpose Technology: Power MOSFET Voltage - Load: 8V ~ 18V Supplier Device Package: PG-TO263-7-1 Motor Type - AC, DC: Brushed DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS282ZDELCO | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V Drain to Source Voltage (Vdss): 49 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: P-TO220-7-3 Vgs(th) (Max) @ Id: 2V @ 240µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-7 Formed Leads Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFS7430TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 195A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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IRFS7430TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 40V 195A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V |
на замовлення 1735 шт: термін постачання 21-31 дні (днів) |
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IPB65R660CFDAATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 6A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: PG-TO263-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V Qualification: AEC-Q101 |
на замовлення 4006 шт: термін постачання 21-31 дні (днів) |
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IPB65R660CFDATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 6A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 200µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V |
на замовлення 97 шт: термін постачання 21-31 дні (днів) |
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BAS1602VH6327XTSA1 | Infineon Technologies |
Description: DIODE STANDARD 80V 200MA PGSC792Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: 150°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 1 µA @ 75 V |
на замовлення 1560 шт: термін постачання 21-31 дні (днів) |
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BAS7002VH6327XTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 70V 70MA PGSC7921Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 100 ps Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 70mA Supplier Device Package: PG-SC79-2-1 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 44602 шт: термін постачання 21-31 дні (днів) |
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BAT6202VH6327XTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 40V 20MA PGSC7921Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz Current - Average Rectified (Io): 20mA Supplier Device Package: PG-SC79-2-1 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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BAT6202VH6327XTSA1 | Infineon Technologies |
Description: DIODE SCHOTTKY 40V 20MA PGSC7921Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz Current - Average Rectified (Io): 20mA Supplier Device Package: PG-SC79-2-1 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA Current - Reverse Leakage @ Vr: 10 µA @ 40 V |
на замовлення 14864 шт: термін постачання 21-31 дні (днів) |
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BBY5602VH6327XTSA1 | Infineon Technologies |
Description: DIODE VARACTOR 10V SNGL PG-SC79Packaging: Cut Tape (CT) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz Capacitance Ratio Condition: C1/C3 Supplier Device Package: PG-SC79-2-1 Voltage - Peak Reverse (Max): 10 V Capacitance Ratio: 3.3 |
на замовлення 20901 шт: термін постачання 21-31 дні (днів) |
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IPB80N08S207ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 75V 80A TO263-3Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
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IPB80N08S207ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 75V 80A TO263-3Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-TO263-3-2 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 80A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 389 шт: термін постачання 21-31 дні (днів) |
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IPD70N04S307ATMA1 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETInput Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3-11 Vgs(th) (Max) @ Id: 4V @ 50µA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 82A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRFI7536GPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 86A TO220Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 86A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 4V @ 150µA Supplier Device Package: TO-220 Full Pack Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V |
на замовлення 1330 шт: термін постачання 21-31 дні (днів) |
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TLE92623BQXV33XUMA1 | Infineon Technologies |
Description: IC INTERFACE SPECIALIZED 48VQFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: SPI Voltage - Supply: 28V Supplier Device Package: PG-VQFN-48-31 Grade: Automotive Part Status: Not For New Designs |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TLE92623BQXV33XUMA1 | Infineon Technologies |
Description: IC INTERFACE SPECIALIZED 48VQFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: SPI Voltage - Supply: 28V Supplier Device Package: PG-VQFN-48-31 Grade: Automotive Part Status: Not For New Designs |
на замовлення 9029 шт: термін постачання 21-31 дні (днів) |
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TLE92623BQXXUMA1 | Infineon Technologies |
Description: IC INTERFACE SPECIALIZED 48VQFNPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: SPI Voltage - Supply: 28V Supplier Device Package: PG-VQFN-48-31 Grade: Automotive Part Status: Not For New Designs |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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TLE92623BQXXUMA1 | Infineon Technologies |
Description: IC INTERFACE SPECIALIZED 48VQFNPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: SPI Voltage - Supply: 28V Supplier Device Package: PG-VQFN-48-31 Grade: Automotive Part Status: Not For New Designs |
на замовлення 2120 шт: термін постачання 21-31 дні (днів) |
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IPB50R199CP | Infineon Technologies |
Description: MOSFET N-CH 500V 17A TO263-3-2 |
товару немає в наявності |
Мінімальне замовлення: 213 шт В кошику од. на суму грн. | ||||||||||||||
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IRFHM8334TRPBF-INF | Infineon Technologies |
Description: MOSFET N-CH 30V 13A/43A 8PQFN DL |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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T2563NH80TOHXOSA1 | Infineon Technologies |
Description: SCR 8KV 3600A BG-T17240L-1Packaging: Tray Package / Case: TO-200AF Mounting Type: Chassis Mount SCR Type: Standard Recovery Operating Temperature: 120°C (TJ) Current - Hold (Ih) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz Current - On State (It (AV)) (Max): 3330 A Voltage - On State (Vtm) (Max): 2.95 V Supplier Device Package: BG-T17240L-1 Current - On State (It (RMS)) (Max): 3600 A Voltage - Off State: 8 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRF7410TRPBF-1 | Infineon Technologies |
Description: MOSFET P-CH 12V 16A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSL296SNH6327XTSA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 1.4A TSOP-6Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TSOP6-6 Vgs(th) (Max) @ Id: 1.8V @ 100µA Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Bulk |
на замовлення 108300 шт: термін постачання 21-31 дні (днів) |
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ICE3B2065JFKLA1 | Infineon Technologies |
Description: IC OFFLINE SWITCH FLYBACK 8DIPPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -25°C ~ 130°C (TJ) Duty Cycle: 75% Frequency - Switching: 67kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V Supplier Device Package: PG-DIP-8 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 18 V Control Features: Soft Start Part Status: Obsolete Power (Watts): 57 W |
на замовлення 84000 шт: термін постачання 21-31 дні (днів) |
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IRFR2307ZTRLPBF | Infineon Technologies |
Description: MOSFET N-CH 75V 42A DPAKRds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V Current - Continuous Drain (Id) @ 25°C: 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 4V @ 100µA Power Dissipation (Max): 110W (Tc) |
на замовлення 7703 шт: термін постачання 21-31 дні (днів) |
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TZ240N34KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 3.4KV 700A MODULEVoltage - Off State: 3.4 kV Current - On State (It (RMS)) (Max): 700 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Current - On State (It (AV)) (Max): 240 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 6100A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 300 mA Structure: Single Operating Temperature: -40°C ~ 125°C Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TZ240N36KOFS1HPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK Part Status: Obsolete Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TZ240N36KOFS2HPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DK Part Status: Obsolete Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TZ240N32KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 3.2KV 700A MODULE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPD50N06S4L08ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 60V 50A TO252-31Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 35µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4818 шт: термін постачання 21-31 дні (днів) |
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CY7C1312KV18-300BZXI | Infineon Technologies |
Description: IC SRAM 18MBIT PARALLEL 165FBGAMemory Organization: 1M x 18 Memory Interface: Parallel Part Status: Active Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 300 MHz Technology: SRAM - Synchronous, QDR II Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 18Mbit Mounting Type: Surface Mount Package / Case: 165-LBGA Packaging: Tray DigiKey Programmable: Not Verified |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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CY7C15632KV18-450BZXI | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGAPackaging: Tray Package / Case: 165-LBGA Mounting Type: Surface Mount Memory Size: 72Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.9V Technology: SRAM - Synchronous, QDR II+ Clock Frequency: 450 MHz Memory Format: SRAM Supplier Device Package: 165-FBGA (13x15) Memory Interface: Parallel Memory Organization: 4M x 18 DigiKey Programmable: Not Verified |
на замовлення 365 шт: термін постачання 21-31 дні (днів) |
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IPD90R1K2C3ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 900V 5.1A TO252-3Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 3.5V @ 310µA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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BCR523UE6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTORCurrent - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 500mA Power - Max: 330mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Bulk Part Status: Active Supplier Device Package: PG-SC74-6-1 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 1kOhms Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BCR523UE6327HTSA1 | Infineon Technologies |
Description: TRANS 2NPN PREBIAS 0.33W SC74Part Status: Last Time Buy Supplier Device Package: PG-SC74-6 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 1kOhms Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 500mA Power - Max: 330mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Bulk |
на замовлення 106000 шт: термін постачання 21-31 дні (днів) |
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TLE4278GXUMA3 | Infineon Technologies |
Description: IC REG LIN 5V 200MA PG-DSO-14-30Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-14-30 Voltage - Output (Min/Fixed): 5V Control Features: Reset, Watchdog Grade: Automotive Part Status: Active Voltage Dropout (Max): 0.5V @ 150mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 12 mA Qualification: AEC-Q100 |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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TLE4278GXUMA3 | Infineon Technologies |
Description: IC REG LIN 5V 200MA PG-DSO-14-30Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-14-30 Voltage - Output (Min/Fixed): 5V Control Features: Reset, Watchdog Grade: Automotive Part Status: Active Voltage Dropout (Max): 0.5V @ 150mA Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 12 mA Qualification: AEC-Q100 |
на замовлення 17639 шт: термін постачання 21-31 дні (днів) |
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| AUXTALR3915 | Infineon Technologies | Description: IC DISCRETE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BTS5562EAUMA1 | Infineon Technologies |
Description: IC LED DRVR RGLTR SPI 24A 36DSOGrade: Automotive Part Status: Obsolete Voltage - Supply (Max): 28V Voltage - Supply (Min): 5.5V Dimming: SPI Supplier Device Package: PG-DSO-36-36 Topology: Switched Capacitor (Charge Pump) Internal Switch(s): Yes Current - Output / Channel: 24A Operating Temperature: -40°C ~ 150°C (TJ) Type: DC DC Regulator Number of Outputs: 5 Mounting Type: Surface Mount Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad Packaging: Bulk |
на замовлення 69000 шт: термін постачання 21-31 дні (днів) |
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| BTS5576G | Infineon Technologies |
Description: PERIPHERAL DRIVER, 5 DRIVERPackaging: Bulk |
на замовлення 1998 шт: термін постачання 21-31 дні (днів) |
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| BTS5590G | Infineon Technologies |
Description: PERIPHERAL DRIVER, 5 DRIVERPart Status: Active Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO Supplier Device Package: PG-DSO-36-34 Ratio - Input:Output: 1:1 Current - Output (Max): 18A, 27A, 48A Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V Voltage - Load: 5.5V ~ 28V Input Type: Non-Inverting Rds On (Typ): 22.8mOhm, 31.5mOhm, 81mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: Latched Driver Interface: SPI Number of Outputs: 5 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 36-BSSOP (0.295", 7.50mm Width) Features: Slew Rate Controlled Packaging: Bulk |
на замовлення 1813 шт: термін постачання 21-31 дні (днів) |
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BTS5572EAUMA1 | Infineon Technologies |
Description: IC LED DRVR RGLTR SPI 24A 36DSOVoltage - Supply (Max): 28V Voltage - Supply (Min): 5.5V Dimming: SPI Supplier Device Package: PG-DSO-36-36 Topology: Switched Capacitor (Charge Pump) Internal Switch(s): Yes Current - Output / Channel: 24A Operating Temperature: -40°C ~ 150°C (TJ) Type: DC DC Regulator Number of Outputs: 5 Mounting Type: Surface Mount Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad Packaging: Bulk Grade: Automotive |
на замовлення 39000 шт: термін постачання 21-31 дні (днів) |
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IPD25CN10NGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 100V 35A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 35A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 39µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V |
на замовлення 1268 шт: термін постачання 21-31 дні (днів) |
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IRSM516-076DA | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 4A 23DIPPart Status: Discontinued at Digi-Key Load Type: Inductive Fault Protection: UVLO Supplier Device Package: 23-DIP Voltage - Load: 480V (Max) Technology: IGBT Current - Peak Output: 15A Current - Output / Channel: 4A Applications: AC Motors Voltage - Supply: 13.5V ~ 16.5V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Logic Mounting Type: Through Hole Package / Case: 32-PowerDIP Module, 23 Leads Features: Bootstrap Circuit Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRSM516-076DA2 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 4A 23DIPPackage / Case: 23-PowerDIP Module (0.551", 14.00mm) Features: Bootstrap Circuit Packaging: Tube Part Status: Discontinued at Digi-Key Load Type: Inductive Fault Protection: UVLO Supplier Device Package: 23-DIPA Voltage - Load: 480V (Max) Technology: IGBT Current - Peak Output: 15A Current - Output / Channel: 4A Applications: AC Motors Voltage - Supply: 13.5V ~ 16.5V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Logic Mounting Type: Through Hole |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRL6342PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 9.9A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Discontinued at Digi-Key Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.1V @ 10µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ICE2A380P2BKSA1 | Infineon Technologies |
Description: IC OFFLINE SW FLYBACK TO220-6Packaging: Bulk Package / Case: TO-220-6 Formed Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 72% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V Supplier Device Package: PG-TO220-6-47 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 13.5 V Control Features: Soft Start Part Status: Obsolete Power (Watts): 111 W |
на замовлення 796690 шт: термін постачання 21-31 дні (днів) |
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PMB8761V3.14 | Infineon Technologies |
Description: INFINEON PMB8761V3.14 TELECOM ICPackaging: Bulk |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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| PSB7280FV3.1 | Infineon Technologies |
Description: JOINT AUDIO DECODER-ENCODERPackaging: Bulk Part Status: Active |
на замовлення 180 шт: термін постачання 21-31 дні (днів) |
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ETD420N22P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 2.2KV 700A MODULEVoltage - Off State: 2.2 kV Current - On State (It (RMS)) (Max): 700 A Part Status: Obsolete Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (AV)) (Max): 427 A Number of SCRs, Diodes: 1 SCR, 1 Diode Current - Non Rep. Surge 50, 60Hz (Itsm): 13400A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 300 mA Structure: Series Connection - SCR/Diode Operating Temperature: -40°C ~ 135°C (TC) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ETT420N22P60HPSA1 | Infineon Technologies |
Description: THYR / DIODE MODULE DKVoltage - Off State: 2.2 kV Current - On State (It (RMS)) (Max): 700 A Part Status: Obsolete Voltage - Gate Trigger (Vgt) (Max): 2.2 V Current - On State (It (AV)) (Max): 427 A Number of SCRs, Diodes: 2 SCRs Current - Non Rep. Surge 50, 60Hz (Itsm): 13400A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 300 mA Structure: Series Connection - All SCRs Operating Temperature: -40°C ~ 135°C (TC) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BSP296L6433 | Infineon Technologies |
Description: SMALL-SIGNAL N-CHANNEL MOSFETInput Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-SOT223 Vgs(th) (Max) @ Id: 1.8V @ 400µA Power Dissipation (Max): 1.79W (Ta) Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Bulk |
на замовлення 6756 шт: термін постачання 21-31 дні (днів) |
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BSP297L6327 | Infineon Technologies |
Description: SMALL-SIGNAL N-CHANNEL MOSFETPackaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 660mA (Ta) Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 1.8V @ 400µA Supplier Device Package: PG-SOT223-4-21 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
| CY2304NZZXC-1 |
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Виробник: Infineon Technologies
Description: IC CLK ZDB 4OUT 140MHZ 8TSSOP
DigiKey Programmable: Not Verified
Number of Circuits: 1
PLL: No
Supplier Device Package: 8-TSSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:4
Main Purpose: PCI Express (PCIe)
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: LVCMOS, LVTTL
Frequency - Max: 140MHz
Output: LVCMOS
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Description: IC CLK ZDB 4OUT 140MHZ 8TSSOP
DigiKey Programmable: Not Verified
Number of Circuits: 1
PLL: No
Supplier Device Package: 8-TSSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:4
Main Purpose: PCI Express (PCIe)
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: LVCMOS, LVTTL
Frequency - Max: 140MHz
Output: LVCMOS
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 157.31 грн |
| BTS409L1CHIPX2LA1 |
Виробник: Infineon Technologies
Description: AUTOMOTIVE HIGH SIDE SWITCH
Part Status: Active
Packaging: Bulk
Description: AUTOMOTIVE HIGH SIDE SWITCH
Part Status: Active
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| TLE4473GV53AUMA2 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V DSO12-6
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Iq): 265 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 300mA, 180mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Current - Supply (Max): 20 mA
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Voltage Dropout (Max): -, 0.6V @ 100mA
PSRR: 65dB (100Hz), 65dB (100Hz)
Part Status: Active
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V, 5V
Supplier Device Package: P-DSO-12-6
Number of Regulators: 2
Voltage - Input (Max): 42V
Description: IC REG LINEAR 3.3V/5V DSO12-6
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Iq): 265 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 300mA, 180mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Tape & Reel (TR)
Current - Supply (Max): 20 mA
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Voltage Dropout (Max): -, 0.6V @ 100mA
PSRR: 65dB (100Hz), 65dB (100Hz)
Part Status: Active
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V, 5V
Supplier Device Package: P-DSO-12-6
Number of Regulators: 2
Voltage - Input (Max): 42V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 152.85 грн |
| 2000+ | 143.77 грн |
| 3000+ | 142.06 грн |
| TLE4473GV53AUMA2 |
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Виробник: Infineon Technologies
Description: IC REG LINEAR 3.3V/5V DSO12-6
Qualification: AEC-Q100
Grade: Automotive
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 265 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 300mA, 180mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Current - Supply (Max): 20 mA
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Voltage Dropout (Max): -, 0.6V @ 100mA
PSRR: 65dB (100Hz), 65dB (100Hz)
Part Status: Active
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V, 5V
Supplier Device Package: P-DSO-12-6
Number of Regulators: 2
Description: IC REG LINEAR 3.3V/5V DSO12-6
Qualification: AEC-Q100
Grade: Automotive
Voltage - Input (Max): 42V
Current - Quiescent (Iq): 265 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 300mA, 180mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 12-BSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Cut Tape (CT)
Current - Supply (Max): 20 mA
Protection Features: Over Current, Over Temperature, Short Circuit, Transient Voltage
Voltage Dropout (Max): -, 0.6V @ 100mA
PSRR: 65dB (100Hz), 65dB (100Hz)
Part Status: Active
Control Features: Inhibit, Reset, Watchdog
Voltage - Output (Min/Fixed): 3.3V, 5V
Supplier Device Package: P-DSO-12-6
Number of Regulators: 2
на замовлення 5026 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 272.77 грн |
| 10+ | 198.27 грн |
| 25+ | 182.28 грн |
| 100+ | 154.62 грн |
| 250+ | 146.76 грн |
| 500+ | 142.03 грн |
| TLE92623QXXUMA1 |
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Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Grade: Automotive
Part Status: Not For New Designs
Supplier Device Package: PG-VQFN-48-31
Interface: SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC INTERFACE SPECIALIZED 48VQFN
Grade: Automotive
Part Status: Not For New Designs
Supplier Device Package: PG-VQFN-48-31
Interface: SPI
Mounting Type: Surface Mount
Package / Case: 48-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRFR3709ZTRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
Description: MOSFET N-CH 30V 86A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| BTN7960BAUMA1 |
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Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 8V-18V TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 47A
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-TO263-7-1
Motor Type - AC, DC: Brushed DC
Description: IC MOTOR DRIVER 8V-18V TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 47A
Interface: On/Off
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 8V ~ 18V
Applications: General Purpose
Technology: Power MOSFET
Voltage - Load: 8V ~ 18V
Supplier Device Package: PG-TO263-7-1
Motor Type - AC, DC: Brushed DC
товару немає в наявності
В кошику
од. на суму грн.
| BTS282ZDELCO |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Drain to Source Voltage (Vdss): 49 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: P-TO220-7-3
Vgs(th) (Max) @ Id: 2V @ 240µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-7 Formed Leads
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Drain to Source Voltage (Vdss): 49 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: P-TO220-7-3
Vgs(th) (Max) @ Id: 2V @ 240µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-7 Formed Leads
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| IRFS7430TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 91.45 грн |
| 1600+ | 82.10 грн |
| IRFS7430TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
Description: MOSFET N-CH 40V 195A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 460 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14240 pF @ 25 V
на замовлення 1735 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 258.04 грн |
| 10+ | 162.45 грн |
| 100+ | 113.60 грн |
| IPB65R660CFDAATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 3.2A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 543 pF @ 100 V
Qualification: AEC-Q101
на замовлення 4006 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 188.30 грн |
| 10+ | 116.86 грн |
| 100+ | 80.10 грн |
| 500+ | 60.42 грн |
| IPB65R660CFDATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
Description: MOSFET N-CH 650V 6A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.1A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 200µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 615 pF @ 100 V
на замовлення 97 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 121.66 грн |
| 10+ | 105.44 грн |
| BAS1602VH6327XTSA1 |
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Виробник: Infineon Technologies
Description: DIODE STANDARD 80V 200MA PGSC792
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
Description: DIODE STANDARD 80V 200MA PGSC792
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 75 V
на замовлення 1560 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 6.20 грн |
| 86+ | 3.51 грн |
| 105+ | 2.87 грн |
| BAS7002VH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 70V 70MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 44602 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 23.25 грн |
| 22+ | 13.58 грн |
| 100+ | 8.48 грн |
| 500+ | 5.88 грн |
| 1000+ | 5.21 грн |
| BAT6202VH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 40V 20MA PGSC7921
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE SCHOTTKY 40V 20MA PGSC7921
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 9.66 грн |
| 6000+ | 8.48 грн |
| 9000+ | 8.07 грн |
| BAT6202VH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 40V 20MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Description: DIODE SCHOTTKY 40V 20MA PGSC7921
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.6pF @ 0V, 1MHz
Current - Average Rectified (Io): 20mA
Supplier Device Package: PG-SC79-2-1
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
на замовлення 14864 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 42.62 грн |
| 12+ | 25.30 грн |
| 100+ | 16.16 грн |
| 500+ | 11.45 грн |
| 1000+ | 10.25 грн |
| BBY5602VH6327XTSA1 |
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Виробник: Infineon Technologies
Description: DIODE VARACTOR 10V SNGL PG-SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SC79-2-1
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
Description: DIODE VARACTOR 10V SNGL PG-SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: PG-SC79-2-1
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
на замовлення 20901 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 11.62 грн |
| 33+ | 9.25 грн |
| IPB80N08S207ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 80A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IPB80N08S207ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A TO263-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 75V 80A TO263-3
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO263-3-2
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 389 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 392.10 грн |
| 10+ | 251.92 грн |
| 100+ | 181.04 грн |
| IPD70N04S307ATMA1 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 50µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 82A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
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| IRFI7536GPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 86A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220 Full Pack
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V
Description: MOSFET N-CH 60V 86A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 86A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 75A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220 Full Pack
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 48 V
на замовлення 1330 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 175+ | 127.59 грн |
| TLE92623BQXV33XUMA1 |
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Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 138.58 грн |
| TLE92623BQXV33XUMA1 |
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Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
на замовлення 9029 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 276.64 грн |
| 10+ | 201.70 грн |
| 25+ | 185.45 грн |
| 100+ | 157.33 грн |
| 250+ | 149.36 грн |
| 500+ | 144.55 грн |
| 1000+ | 138.30 грн |
| TLE92623BQXXUMA1 |
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Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
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Мінімальне замовлення: 2500 шт
В кошику
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| TLE92623BQXXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
Description: IC INTERFACE SPECIALIZED 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Voltage - Supply: 28V
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Part Status: Not For New Designs
на замовлення 2120 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 276.64 грн |
| 10+ | 201.70 грн |
| 25+ | 185.45 грн |
| 100+ | 157.33 грн |
| 250+ | 149.36 грн |
| 500+ | 144.55 грн |
| 1000+ | 138.30 грн |
| IPB50R199CP |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 17A TO263-3-2
Description: MOSFET N-CH 500V 17A TO263-3-2
товару немає в наявності
Мінімальне замовлення: 213 шт
В кошику
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| IRFHM8334TRPBF-INF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 13A/43A 8PQFN DL
Description: MOSFET N-CH 30V 13A/43A 8PQFN DL
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| T2563NH80TOHXOSA1 |
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Виробник: Infineon Technologies
Description: SCR 8KV 3600A BG-T17240L-1
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: 120°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Current - On State (It (AV)) (Max): 3330 A
Voltage - On State (Vtm) (Max): 2.95 V
Supplier Device Package: BG-T17240L-1
Current - On State (It (RMS)) (Max): 3600 A
Voltage - Off State: 8 kV
Description: SCR 8KV 3600A BG-T17240L-1
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
SCR Type: Standard Recovery
Operating Temperature: 120°C (TJ)
Current - Hold (Ih) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 93000A @ 50Hz
Current - On State (It (AV)) (Max): 3330 A
Voltage - On State (Vtm) (Max): 2.95 V
Supplier Device Package: BG-T17240L-1
Current - On State (It (RMS)) (Max): 3600 A
Voltage - Off State: 8 kV
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| IRF7410TRPBF-1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 12V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
Description: MOSFET P-CH 12V 16A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 8676 pF @ 10 V
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| BSL296SNH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1.4A TSOP-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
Description: MOSFET N-CH 100V 1.4A TSOP-6
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 152.7 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TSOP6-6
Vgs(th) (Max) @ Id: 1.8V @ 100µA
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 1.26A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
на замовлення 108300 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1011+ | 20.38 грн |
| ICE3B2065JFKLA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 57 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 130°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
Supplier Device Package: PG-DIP-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 18 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 57 W
на замовлення 84000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 162+ | 125.65 грн |
| IRFR2307ZTRLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 42A DPAK
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 110W (Tc)
Description: MOSFET N-CH 75V 42A DPAK
Rds On (Max) @ Id, Vgs: 16mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 4V @ 100µA
Power Dissipation (Max): 110W (Tc)
на замовлення 7703 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 162.73 грн |
| 10+ | 100.74 грн |
| 100+ | 68.49 грн |
| 500+ | 51.33 грн |
| 1000+ | 47.16 грн |
| TZ240N34KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 3.4KV 700A MODULE
Voltage - Off State: 3.4 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 240 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 6100A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: SCR MODULE 3.4KV 700A MODULE
Voltage - Off State: 3.4 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 240 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 6100A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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| TZ240N36KOFS1HPSA1 |
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Part Status: Obsolete
Packaging: Tray
Description: THYR / DIODE MODULE DK
Part Status: Obsolete
Packaging: Tray
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| TZ240N36KOFS2HPSA1 |
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Part Status: Obsolete
Packaging: Tray
Description: THYR / DIODE MODULE DK
Part Status: Obsolete
Packaging: Tray
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| TZ240N32KOFHPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 3.2KV 700A MODULE
Description: SCR MODULE 3.2KV 700A MODULE
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| IPD50N06S4L08ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 35µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4818 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.83 грн |
| 10+ | 82.23 грн |
| 100+ | 55.28 грн |
| 500+ | 41.06 грн |
| 1000+ | 37.57 грн |
| CY7C1312KV18-300BZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Memory Organization: 1M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 300 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Memory Organization: 1M x 18
Memory Interface: Parallel
Part Status: Active
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 300 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 795.06 грн |
| CY7C15632KV18-450BZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 450 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
на замовлення 365 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8021.07 грн |
| IPD90R1K2C3ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 900V 5.1A TO252-3
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
Description: MOSFET N-CH 900V 5.1A TO252-3
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3
Vgs(th) (Max) @ Id: 3.5V @ 310µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 100 V
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Мінімальне замовлення: 2500 шт
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| BCR523UE6327 |
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Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Power - Max: 330mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-SC74-6-1
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 1kOhms
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Description: BIPOLAR DIGITAL TRANSISTOR
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Power - Max: 330mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
Part Status: Active
Supplier Device Package: PG-SC74-6-1
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 1kOhms
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
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| BCR523UE6327HTSA1 |
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Виробник: Infineon Technologies
Description: TRANS 2NPN PREBIAS 0.33W SC74
Part Status: Last Time Buy
Supplier Device Package: PG-SC74-6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 1kOhms
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Power - Max: 330mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Bulk
Description: TRANS 2NPN PREBIAS 0.33W SC74
Part Status: Last Time Buy
Supplier Device Package: PG-SC74-6
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 1kOhms
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 500mA
Power - Max: 330mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Bulk
на замовлення 106000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2039+ | 11.06 грн |
| TLE4278GXUMA3 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 200MA PG-DSO-14-30
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-30
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Grade: Automotive
Part Status: Active
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 12 mA
Qualification: AEC-Q100
Description: IC REG LIN 5V 200MA PG-DSO-14-30
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-30
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Grade: Automotive
Part Status: Active
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 12 mA
Qualification: AEC-Q100
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 77.32 грн |
| 5000+ | 72.89 грн |
| 7500+ | 72.11 грн |
| TLE4278GXUMA3 |
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Виробник: Infineon Technologies
Description: IC REG LIN 5V 200MA PG-DSO-14-30
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-30
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Grade: Automotive
Part Status: Active
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 12 mA
Qualification: AEC-Q100
Description: IC REG LIN 5V 200MA PG-DSO-14-30
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14-30
Voltage - Output (Min/Fixed): 5V
Control Features: Reset, Watchdog
Grade: Automotive
Part Status: Active
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 12 mA
Qualification: AEC-Q100
на замовлення 17639 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 151.11 грн |
| 10+ | 107.30 грн |
| 25+ | 97.84 грн |
| 100+ | 82.08 грн |
| 250+ | 77.42 грн |
| 500+ | 74.99 грн |
| AUXTALR3915 |
Виробник: Infineon Technologies
Description: IC DISCRETE
Description: IC DISCRETE
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| BTS5562EAUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRVR RGLTR SPI 24A 36DSO
Grade: Automotive
Part Status: Obsolete
Voltage - Supply (Max): 28V
Voltage - Supply (Min): 5.5V
Dimming: SPI
Supplier Device Package: PG-DSO-36-36
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): Yes
Current - Output / Channel: 24A
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Regulator
Number of Outputs: 5
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Bulk
Description: IC LED DRVR RGLTR SPI 24A 36DSO
Grade: Automotive
Part Status: Obsolete
Voltage - Supply (Max): 28V
Voltage - Supply (Min): 5.5V
Dimming: SPI
Supplier Device Package: PG-DSO-36-36
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): Yes
Current - Output / Channel: 24A
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Regulator
Number of Outputs: 5
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Bulk
на замовлення 69000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 94+ | 230.16 грн |
| BTS5576G |
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на замовлення 1998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 76+ | 283.30 грн |
| BTS5590G |
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Виробник: Infineon Technologies
Description: PERIPHERAL DRIVER, 5 DRIVER
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Supplier Device Package: PG-DSO-36-34
Ratio - Input:Output: 1:1
Current - Output (Max): 18A, 27A, 48A
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Voltage - Load: 5.5V ~ 28V
Input Type: Non-Inverting
Rds On (Typ): 22.8mOhm, 31.5mOhm, 81mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: Latched Driver
Interface: SPI
Number of Outputs: 5
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Features: Slew Rate Controlled
Packaging: Bulk
Description: PERIPHERAL DRIVER, 5 DRIVER
Part Status: Active
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Reverse Battery, Short Circuit, UVLO
Supplier Device Package: PG-DSO-36-34
Ratio - Input:Output: 1:1
Current - Output (Max): 18A, 27A, 48A
Voltage - Supply (Vcc/Vdd): 3.8V ~ 5.5V
Voltage - Load: 5.5V ~ 28V
Input Type: Non-Inverting
Rds On (Typ): 22.8mOhm, 31.5mOhm, 81mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: Latched Driver
Interface: SPI
Number of Outputs: 5
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 36-BSSOP (0.295", 7.50mm Width)
Features: Slew Rate Controlled
Packaging: Bulk
на замовлення 1813 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 69+ | 314.06 грн |
| BTS5572EAUMA1 |
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Виробник: Infineon Technologies
Description: IC LED DRVR RGLTR SPI 24A 36DSO
Voltage - Supply (Max): 28V
Voltage - Supply (Min): 5.5V
Dimming: SPI
Supplier Device Package: PG-DSO-36-36
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): Yes
Current - Output / Channel: 24A
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Regulator
Number of Outputs: 5
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Bulk
Grade: Automotive
Description: IC LED DRVR RGLTR SPI 24A 36DSO
Voltage - Supply (Max): 28V
Voltage - Supply (Min): 5.5V
Dimming: SPI
Supplier Device Package: PG-DSO-36-36
Topology: Switched Capacitor (Charge Pump)
Internal Switch(s): Yes
Current - Output / Channel: 24A
Operating Temperature: -40°C ~ 150°C (TJ)
Type: DC DC Regulator
Number of Outputs: 5
Mounting Type: Surface Mount
Package / Case: 36-BSSOP (0.295", 7.50mm Width) Exposed Pad
Packaging: Bulk
Grade: Automotive
на замовлення 39000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 86+ | 261.86 грн |
| IPD25CN10NGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 35A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 39µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V
Description: MOSFET N-CH 100V 35A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 35A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 39µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V
на замовлення 1268 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 116.24 грн |
| 10+ | 70.89 грн |
| 100+ | 47.53 грн |
| 500+ | 35.20 грн |
| 1000+ | 32.18 грн |
| IRSM516-076DA |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4A 23DIP
Part Status: Discontinued at Digi-Key
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIP
Voltage - Load: 480V (Max)
Technology: IGBT
Current - Peak Output: 15A
Current - Output / Channel: 4A
Applications: AC Motors
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 32-PowerDIP Module, 23 Leads
Features: Bootstrap Circuit
Packaging: Tube
Description: IC HALF BRIDGE DRIVER 4A 23DIP
Part Status: Discontinued at Digi-Key
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIP
Voltage - Load: 480V (Max)
Technology: IGBT
Current - Peak Output: 15A
Current - Output / Channel: 4A
Applications: AC Motors
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Package / Case: 32-PowerDIP Module, 23 Leads
Features: Bootstrap Circuit
Packaging: Tube
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| IRSM516-076DA2 |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4A 23DIP
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Features: Bootstrap Circuit
Packaging: Tube
Part Status: Discontinued at Digi-Key
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIPA
Voltage - Load: 480V (Max)
Technology: IGBT
Current - Peak Output: 15A
Current - Output / Channel: 4A
Applications: AC Motors
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
Description: IC HALF BRIDGE DRIVER 4A 23DIP
Package / Case: 23-PowerDIP Module (0.551", 14.00mm)
Features: Bootstrap Circuit
Packaging: Tube
Part Status: Discontinued at Digi-Key
Load Type: Inductive
Fault Protection: UVLO
Supplier Device Package: 23-DIPA
Voltage - Load: 480V (Max)
Technology: IGBT
Current - Peak Output: 15A
Current - Output / Channel: 4A
Applications: AC Motors
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Through Hole
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| IRL6342PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Description: MOSFET N-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Discontinued at Digi-Key
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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| ICE2A380P2BKSA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SW FLYBACK TO220-6
Packaging: Bulk
Package / Case: TO-220-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-TO220-6-47
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 111 W
Description: IC OFFLINE SW FLYBACK TO220-6
Packaging: Bulk
Package / Case: TO-220-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 72%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8.5V ~ 21V
Supplier Device Package: PG-TO220-6-47
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 13.5 V
Control Features: Soft Start
Part Status: Obsolete
Power (Watts): 111 W
на замовлення 796690 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 405+ | 48.74 грн |
| PMB8761V3.14 |
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на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 52+ | 381.06 грн |
| PSB7280FV3.1 |
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Виробник: Infineon Technologies
Description: JOINT AUDIO DECODER-ENCODER
Packaging: Bulk
Part Status: Active
Description: JOINT AUDIO DECODER-ENCODER
Packaging: Bulk
Part Status: Active
на замовлення 180 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 2070.01 грн |
| ETD420N22P60HPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 2.2KV 700A MODULE
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 700 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 427 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 13400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: SCR MODULE 2.2KV 700A MODULE
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 700 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 427 A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - Non Rep. Surge 50, 60Hz (Itsm): 13400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - SCR/Diode
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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| ETT420N22P60HPSA1 |
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Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 700 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 427 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 13400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: THYR / DIODE MODULE DK
Voltage - Off State: 2.2 kV
Current - On State (It (RMS)) (Max): 700 A
Part Status: Obsolete
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (AV)) (Max): 427 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 13400A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
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од. на суму грн.
| BSP296L6433 |
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Виробник: Infineon Technologies
Description: SMALL-SIGNAL N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Power Dissipation (Max): 1.79W (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
Description: SMALL-SIGNAL N-CHANNEL MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-SOT223
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Power Dissipation (Max): 1.79W (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Bulk
на замовлення 6756 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1094+ | 19.85 грн |
| BSP297L6327 |
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Виробник: Infineon Technologies
Description: SMALL-SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V
Description: SMALL-SIGNAL N-CHANNEL MOSFET
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 660mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4-21
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 16.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 357 pF @ 25 V
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