Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123003) > Сторінка 364 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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| IGC20T60TEX7SA1 | Infineon Technologies |
Description: IGBT 600V 20A WAFER Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IRGC15B60KB | Infineon Technologies |
Description: IGBT CHIP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IRGC15B60KD | Infineon Technologies |
Description: IGBT CHIP |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SLE 66CX80PE M5.1 | Infineon Technologies |
Description: IC SECURITY CTRLR 8/16BIT M5.1Packaging: Bulk Package / Case: M5.1 Chip Card Module Applications: Security Supplier Device Package: T-M5.1-9 Part Status: Discontinued at Digi-Key DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SLE 66CX80PE MFC5.6 | Infineon Technologies |
Description: IC SECURITY CTRLR 8/16BIT MFC5.6Packaging: Bulk Package / Case: MFC5.6 Chip Card Module Applications: Security Supplier Device Package: T-M6.3-8 Part Status: Discontinued at Digi-Key DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| SLE 66CX80PE MFC5.8 | Infineon Technologies |
Description: IC SECURITY CTRLR 8/16BIT MFC5.8Packaging: Bulk Package / Case: MFC5.8 Chip Card Module Applications: Security Supplier Device Package: S-MFC5.8-9 Part Status: Discontinued at Digi-Key DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SLE 66CX80PE DSO8 | Infineon Technologies |
Description: IC SECURITY CTRLR 8/16BIT DS08Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Applications: Security Supplier Device Package: PG-DSO-8 Part Status: Discontinued at Digi-Key DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPI50N12S3L15AKSA1 | Infineon Technologies |
Description: MOSFET N-CHANNEL_100+Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 60µA Supplier Device Package: PG-TO262-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 15500 шт: термін постачання 21-31 дні (днів) |
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IPP50N12S3L15AKSA1 | Infineon Technologies |
Description: MOSFET N-CHANNEL_100+Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 60µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 12500 шт: термін постачання 21-31 дні (днів) |
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ADM6996LC-AC-T-1 | Infineon Technologies |
Description: LAN CONTROLLERPackaging: Bulk Package / Case: 128-BFQFP Function: Switch Interface: RMII Protocol: Ethernet Standards: 10/100 Base-T/TX PHY Supplier Device Package: PG-BFQFP-128 Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 104651 шт: термін постачання 21-31 дні (днів) |
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ADM6996L-AA-T-1 | Infineon Technologies |
Description: LAN CONTROLLER, 7 CHANNEL(S), 12Packaging: Tray Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 771 шт: термін постачання 21-31 дні (днів) |
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| FF600R12KF4NOSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 600A 3900WPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 600A NTC Thermistor: No Part Status: Active Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 3900 W Current - Collector Cutoff (Max): 8 mA Input Capacitance (Cies) @ Vce: 45 nF @ 25 V |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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FF600R12KE4PBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 600A AG-62MM-1Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A NTC Thermistor: No Supplier Device Package: AG-62MM-1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 38 nF @ 25 V |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
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FF600R12ME4B73BPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 1200A 20MWPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 1200 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FF600R12ME4PB72BPSA1 | Infineon Technologies |
Description: MEDIUM POWER ECONOPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD-5 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 37 nF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | ||||||||||||||||
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FF900R12IE4VBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 900A 5100WPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Not For New Designs Current - Collector (Ic) (Max): 900 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 5100 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 54 nF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 3 шт В кошику од. на суму грн. | ||||||||||||||||
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S6E1C32B0AGP20000 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 32LQFPDigiKey Programmable: Not Verified Number of I/O: 24 Supplier Device Package: 32-LQFP (7x7) Peripherals: LVD, POR, PWM, WDT Connectivity: CSIO, I2C, LINbus, UART/USART, USB Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V Core Size: 32-Bit Single-Core Data Converters: A/D 6x12b Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 128KB (128K x 8) Speed: 40MHz Mounting Type: Surface Mount Package / Case: 32-LQFP Packaging: Tray |
на замовлення 271 шт: термін постачання 21-31 дні (днів) |
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BGA825L6SE6327XTSA1 | Infineon Technologies |
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3Packaging: Bulk Package / Case: 6-XFDFN Mounting Type: Surface Mount Frequency: 1.55GHz ~ 1.615GHz RF Type: GPS Voltage - Supply: 1.5V ~ 3.6V Gain: 17dB Current - Supply: 4.8mA Noise Figure: 0.6dB P1dB: -10dBm Test Frequency: 1.575GHz Supplier Device Package: TSLP-6-3 Part Status: Obsolete |
на замовлення 656038 шт: термін постачання 21-31 дні (днів) |
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EVALDRIVE3PHPFD7TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR IMC101TUtilized IC / Part: IMC101T Contents: Board(s) Type: Power Management Function: Motor Controller/Driver Packaging: Box |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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PEB3264HV1.4 | Infineon Technologies |
Description: SLIC FILTERNumber of Circuits: 2 Part Status: Active Supplier Device Package: P-MQFP-64-1 Current - Supply: 105mA Voltage - Supply: 3.3V Operating Temperature: 0°C ~ 70°C Interface: IOM-2, PCM Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC) Mounting Type: Surface Mount Package / Case: 64-QFP Packaging: Bulk |
на замовлення 10974 шт: термін постачання 21-31 дні (днів) |
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PEB3264HV1.4P | Infineon Technologies |
Description: SLIC FILTERNumber of Circuits: 2 Part Status: Active Supplier Device Package: P-MQFP-64-1 Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: -40°C ~ 85°C Interface: IOM-2, PCM Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC) Mounting Type: Surface Mount Package / Case: 64-QFP Packaging: Bulk |
на замовлення 420 шт: термін постачання 21-31 дні (днів) |
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PEB3264FV1.4 | Infineon Technologies |
Description: SLIC FILTERPackaging: Bulk Package / Case: 64-LQFP Mounting Type: Surface Mount Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC) Interface: IOM-2, PCM Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.3V Current - Supply: 105mA Supplier Device Package: PG-TQFP-64-1 Part Status: Active Number of Circuits: 2 |
на замовлення 104 шт: термін постачання 21-31 дні (днів) |
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PEB 3264 F V1.4 | Infineon Technologies |
Description: IC TELECOM INTERFACE TQFP-64Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC) Interface: IOM-2, PCM Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.3V Current - Supply: 105mA Supplier Device Package: PG-TQFP-64-1 Part Status: Obsolete Number of Circuits: 2 |
товару немає в наявності |
Мінімальне замовлення: 160 шт В кошику од. на суму грн. | ||||||||||||||||
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S6E2HE6G0AGV2B000 | Infineon Technologies |
Description: IC MCU 32BIT 544KB FLASH 120LQFPNumber of I/O: 100 Part Status: Active Supplier Device Package: 120-LQFP (16x16) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 24x12b; D/A 2x12b Core Processor: ARM® Cortex®-M4F Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 64K x 8 Program Memory Size: 544KB (544K x 8) Speed: 160MHz Mounting Type: Surface Mount Package / Case: 120-LQFP Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||||
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ISC037N03L5ISATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 20A/78A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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ISC037N03L5ISATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 20A/78A TDSONInput Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PG-TDSON-8-6 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.5W (Ta), 37W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
на замовлення 18934 шт: термін постачання 21-31 дні (днів) |
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IPG20N04S412ATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 40V 20A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 15µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLS4120D0EPVXUMA1 | Infineon Technologies |
Description: OPTIREG SWITCHER |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLS4120D0EPVXUMA1 | Infineon Technologies |
Description: OPTIREG SWITCHER |
на замовлення 5200 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
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BFR181E6327 | Infineon Technologies |
Description: LOW-NOISE TRANSISTORPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 18.5dB Power - Max: 175mW Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Supplier Device Package: PG-SOT23 Part Status: Active |
на замовлення 54000 шт: термін постачання 21-31 дні (днів) |
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BFR181WE6327 | Infineon Technologies |
Description: LOW-NOISE TRANSISTORPackaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 19dB Power - Max: 175mW Current - Collector (Ic) (Max): 20mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz Supplier Device Package: SOT-323 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLS850B0TEV33ATMA1 | Infineon Technologies |
Description: IC REG LIN 3.3V 500MA PG-TO252-5Packaging: Cut Tape (CT) Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 25 µA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: PG-TO252-5 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Grade: Automotive Part Status: Active PSRR: 63dB (100Hz) Voltage Dropout (Max): 0.6V @ 250mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 33 µA Qualification: AEC-Q100 |
на замовлення 2938 шт: термін постачання 21-31 дні (днів) |
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SPP80N03S2L05 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRLR2908TRLPBF-INF | Infineon Technologies |
Description: IRLR2908 - HEXFET POWER MOSFET Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D-Pak Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BCR198E6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR |
на замовлення 147000 шт: термін постачання 21-31 дні (днів) |
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BCR198TE6327 | Infineon Technologies |
Description: TRANS PREBIAS PNP 50V SOT23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT23-3-3 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 190 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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BCR198WH6327 | Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTORPackaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Supplier Device Package: PG-SOT323-3-1 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 190 MHz Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AUIR3316S-INF | Infineon Technologies |
Description: LATCH BASED PERIPHERAL DRIVER, 1Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 5.5mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 26V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 23A Ratio - Input:Output: 1:1 Supplier Device Package: D2PAK Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Battery |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BGSA133GN10E6327XTSA1 | Infineon Technologies |
Description: IC RF ANT DEVICE 10TSNP Packaging: Bulk Package / Case: 10-XFQFN Mounting Type: Surface Mount Function: Switch Supplier Device Package: PG-TSNP-10-1 |
на замовлення 255000 шт: термін постачання 21-31 дні (днів) |
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BGSA11GN10E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SPST 5GHZ TSNP10-1Packaging: Cut Tape (CT) Package / Case: 10-XFQFN Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SPST RF Type: General Purpose Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.8V ~ 3.6V Insertion Loss: 0.35dB Frequency Range: 100MHz ~ 5GHz Test Frequency: 2.69GHz Isolation: 14dB Supplier Device Package: PG-TSNP-10-1 IIP3: 75dBm Part Status: Active |
на замовлення 2301 шт: термін постачання 21-31 дні (днів) |
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CY7C1041GN-10ZSXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44TSOP IIPackaging: Tray Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 4Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Access Time: 10 ns Memory Organization: 256K x 16 DigiKey Programmable: Not Verified |
на замовлення 509 шт: термін постачання 21-31 дні (днів) |
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BGSA14GN10E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SP4T 5GHZ TSNP10-1Features: Single Line Control Packaging: Tape & Reel (TR) Package / Case: 10-XFQFN Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SP4T RF Type: Cellular, 3G, 4G Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.8V ~ 3.6V Insertion Loss: 0.46dB Frequency Range: 100MHz ~ 5GHz Test Frequency: 2.69GHz Isolation: 20dB Supplier Device Package: PG-TSNP-10-1 |
товару немає в наявності |
Мінімальне замовлення: 7500 шт В кошику од. на суму грн. | ||||||||||||||||
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BGSA14GN10E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SP4T 5GHZ TSNP10-1Features: Single Line Control Packaging: Cut Tape (CT) Package / Case: 10-XFQFN Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SP4T RF Type: Cellular, 3G, 4G Operating Temperature: -30°C ~ 85°C Voltage - Supply: 1.8V ~ 3.6V Insertion Loss: 0.46dB Frequency Range: 100MHz ~ 5GHz Test Frequency: 2.69GHz Isolation: 20dB Supplier Device Package: PG-TSNP-10-1 |
на замовлення 5695 шт: термін постачання 21-31 дні (днів) |
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BGSA133GN10E6327XTSA1 | Infineon Technologies |
Description: IC RF ANT DEVICE 10TSNP Packaging: Tape & Reel (TR) Package / Case: 10-XFQFN Mounting Type: Surface Mount Function: Switch Supplier Device Package: PG-TSNP-10-1 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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CY7C1041GN-10VXI | Infineon Technologies |
Description: IC SRAM 4MBIT PARALLEL 44SOJDigiKey Programmable: Not Verified Memory Organization: 256K x 16 Access Time: 10 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 10ns Supplier Device Package: 44-SOJ Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 4Mbit Mounting Type: Surface Mount Package / Case: 44-BSOJ (0.400", 10.16mm Width) Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 850 шт В кошику од. на суму грн. | ||||||||||||||||
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BSD235N L6327 | Infineon Technologies |
Description: MOSFET 2N-CH 20V 0.95A SOT363 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSD235N L6327 | Infineon Technologies |
Description: MOSFET 2N-CH 20V 0.95A SOT363 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSC025N03LSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 25A/100A TDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-5 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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BSC025N03LSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 25A/100A TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-5 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V |
на замовлення 2015 шт: термін постачання 21-31 дні (днів) |
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BCM89071A1CUBXGT | Infineon Technologies |
Description: IC RF TXRX+MCU BLUETOOTH 42UFBGA |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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SPP07N600S5 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Part Status: Active |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
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IPB60R299CPAATMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 11A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPB100N04S2L-03ATMA2 | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V |
на замовлення 17740 шт: термін постачання 21-31 дні (днів) |
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IPB100N04S2L03ATMA2 | Infineon Technologies |
Description: MOSFET N-CH 40V 100A TO263-3Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 51328 шт: термін постачання 21-31 дні (днів) |
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IPB100N04S204ATMA4 | Infineon Technologies |
Description: MOSFET N-CH 40V 100A TO263-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IKCM20L60GBXKMA1 | Infineon Technologies |
Description: INTELLIGENT POWER MODULE (IPM)Packaging: Bulk Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Part Status: Active |
на замовлення 6655 шт: термін постачання 21-31 дні (днів) |
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IKCM15H60HAXXMA1 | Infineon Technologies |
Description: INTELLIGENT POWER MODULE (IPM) Packaging: Bulk Package / Case: 24-PowerDIP Module Mounting Type: Through Hole Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 15A Operating Temperature: -40°C ~ 125°C Output Configuration: Half Bridge (3) Voltage - Supply: 13.5V ~ 18.5V Applications: Fan Motor Driver Technology: IGBT Supplier Device Package: 24-DIP Motor Type - Stepper: Multiphase Motor Type - AC, DC: AC, Synchronous Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IKCM10H60HAXKMA1 | Infineon Technologies |
Description: IFPS MODULES 24MDIPPackaging: Bulk Package / Case: 24-PowerDIP Module (1.028", 26.10mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 10 A Voltage: 600 V |
на замовлення 624 шт: термін постачання 21-31 дні (днів) |
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IKCM20L60HAXKMA1 | Infineon Technologies |
Description: IGBT IPM 600V 20A 24-PWRDIP MODPackaging: Bulk Package / Case: 24-PowerDIP Module (1.028", 26.10mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 20 A Voltage: 600 V |
на замовлення 513 шт: термін постачання 21-31 дні (днів) |
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IKCM20L60HDXKMA1 | Infineon Technologies |
Description: IGBT IPM 600V 20A 24-PWRDIP MODPackaging: Bulk Package / Case: 24-PowerDIP Module (1.028", 26.10mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 20 A Voltage: 600 V |
на замовлення 560 шт: термін постачання 21-31 дні (днів) |
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| IRGC15B60KB |
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Виробник: Infineon Technologies
Description: IGBT CHIP
Description: IGBT CHIP
товару немає в наявності
В кошику
од. на суму грн.
| IRGC15B60KD |
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Виробник: Infineon Technologies
Description: IGBT CHIP
Description: IGBT CHIP
товару немає в наявності
В кошику
од. на суму грн.
| SLE 66CX80PE M5.1 |
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Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT M5.1
Packaging: Bulk
Package / Case: M5.1 Chip Card Module
Applications: Security
Supplier Device Package: T-M5.1-9
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Description: IC SECURITY CTRLR 8/16BIT M5.1
Packaging: Bulk
Package / Case: M5.1 Chip Card Module
Applications: Security
Supplier Device Package: T-M5.1-9
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| SLE 66CX80PE MFC5.6 |
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Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT MFC5.6
Packaging: Bulk
Package / Case: MFC5.6 Chip Card Module
Applications: Security
Supplier Device Package: T-M6.3-8
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Description: IC SECURITY CTRLR 8/16BIT MFC5.6
Packaging: Bulk
Package / Case: MFC5.6 Chip Card Module
Applications: Security
Supplier Device Package: T-M6.3-8
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| SLE 66CX80PE MFC5.8 |
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Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT MFC5.8
Packaging: Bulk
Package / Case: MFC5.8 Chip Card Module
Applications: Security
Supplier Device Package: S-MFC5.8-9
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Description: IC SECURITY CTRLR 8/16BIT MFC5.8
Packaging: Bulk
Package / Case: MFC5.8 Chip Card Module
Applications: Security
Supplier Device Package: S-MFC5.8-9
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| SLE 66CX80PE DSO8 |
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Виробник: Infineon Technologies
Description: IC SECURITY CTRLR 8/16BIT DS08
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Applications: Security
Supplier Device Package: PG-DSO-8
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Description: IC SECURITY CTRLR 8/16BIT DS08
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Applications: Security
Supplier Device Package: PG-DSO-8
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IPI50N12S3L15AKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Qualification: AEC-Q101
на замовлення 15500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 360+ | 62.31 грн |
| IPP50N12S3L15AKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.7mOhm @ 50A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 60µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4180 pF @ 25 V
Qualification: AEC-Q101
на замовлення 12500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 360+ | 62.31 грн |
| ADM6996LC-AC-T-1 |
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Виробник: Infineon Technologies
Description: LAN CONTROLLER
Packaging: Bulk
Package / Case: 128-BFQFP
Function: Switch
Interface: RMII
Protocol: Ethernet
Standards: 10/100 Base-T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Active
DigiKey Programmable: Not Verified
Description: LAN CONTROLLER
Packaging: Bulk
Package / Case: 128-BFQFP
Function: Switch
Interface: RMII
Protocol: Ethernet
Standards: 10/100 Base-T/TX PHY
Supplier Device Package: PG-BFQFP-128
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 104651 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 71+ | 281.77 грн |
| ADM6996L-AA-T-1 |
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Виробник: Infineon Technologies
Description: LAN CONTROLLER, 7 CHANNEL(S), 12
Packaging: Tray
Part Status: Active
DigiKey Programmable: Not Verified
Description: LAN CONTROLLER, 7 CHANNEL(S), 12
Packaging: Tray
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 771 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 74+ | 282.59 грн |
| FF600R12KF4NOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 600A 3900W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 600A
NTC Thermistor: No
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3900 W
Current - Collector Cutoff (Max): 8 mA
Input Capacitance (Cies) @ Vce: 45 nF @ 25 V
Description: IGBT MODULE 1200V 600A 3900W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 600A
NTC Thermistor: No
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 3900 W
Current - Collector Cutoff (Max): 8 mA
Input Capacitance (Cies) @ Vce: 45 nF @ 25 V
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 49484.83 грн |
| FF600R12KE4PBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 600A AG-62MM-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
Description: IGBT MOD 1200V 600A AG-62MM-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-62MM-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 38 nF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 12874.32 грн |
| FF600R12ME4B73BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 1200A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: IGBT MOD 1200V 1200A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
товару немає в наявності
В кошику
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| FF600R12ME4PB72BPSA1 |
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Виробник: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
Description: MEDIUM POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 37 nF @ 25 V
товару немає в наявності
Мінімальне замовлення: 6 шт
В кошику
од. на суму грн.
| FF900R12IE4VBOSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 900A 5100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
Description: IGBT MOD 1200V 900A 5100W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 900A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 5100 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54 nF @ 25 V
товару немає в наявності
Мінімальне замовлення: 3 шт
В кошику
од. на суму грн.
| S6E1C32B0AGP20000 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 32LQFP
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 32-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 6x12b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 32-LQFP
Packaging: Tray
Description: IC MCU 32BIT 128KB FLASH 32LQFP
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 32-LQFP (7x7)
Peripherals: LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 6x12b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 32-LQFP
Packaging: Tray
на замовлення 271 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 63.54 грн |
| BGA825L6SE6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 4.8mA
Noise Figure: 0.6dB
P1dB: -10dBm
Test Frequency: 1.575GHz
Supplier Device Package: TSLP-6-3
Part Status: Obsolete
Description: IC AMP GPS 1.55-1.615GHZ TSLP6-3
Packaging: Bulk
Package / Case: 6-XFDFN
Mounting Type: Surface Mount
Frequency: 1.55GHz ~ 1.615GHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 17dB
Current - Supply: 4.8mA
Noise Figure: 0.6dB
P1dB: -10dBm
Test Frequency: 1.575GHz
Supplier Device Package: TSLP-6-3
Part Status: Obsolete
на замовлення 656038 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1888+ | 11.82 грн |
| EVALDRIVE3PHPFD7TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR IMC101T
Utilized IC / Part: IMC101T
Contents: Board(s)
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
Description: EVAL BOARD FOR IMC101T
Utilized IC / Part: IMC101T
Contents: Board(s)
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 12524.06 грн |
| PEB3264HV1.4 |
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Виробник: Infineon Technologies
Description: SLIC FILTER
Number of Circuits: 2
Part Status: Active
Supplier Device Package: P-MQFP-64-1
Current - Supply: 105mA
Voltage - Supply: 3.3V
Operating Temperature: 0°C ~ 70°C
Interface: IOM-2, PCM
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Mounting Type: Surface Mount
Package / Case: 64-QFP
Packaging: Bulk
Description: SLIC FILTER
Number of Circuits: 2
Part Status: Active
Supplier Device Package: P-MQFP-64-1
Current - Supply: 105mA
Voltage - Supply: 3.3V
Operating Temperature: 0°C ~ 70°C
Interface: IOM-2, PCM
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Mounting Type: Surface Mount
Package / Case: 64-QFP
Packaging: Bulk
на замовлення 10974 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 333.84 грн |
| PEB3264HV1.4P |
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Виробник: Infineon Technologies
Description: SLIC FILTER
Number of Circuits: 2
Part Status: Active
Supplier Device Package: P-MQFP-64-1
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Interface: IOM-2, PCM
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Mounting Type: Surface Mount
Package / Case: 64-QFP
Packaging: Bulk
Description: SLIC FILTER
Number of Circuits: 2
Part Status: Active
Supplier Device Package: P-MQFP-64-1
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: -40°C ~ 85°C
Interface: IOM-2, PCM
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Mounting Type: Surface Mount
Package / Case: 64-QFP
Packaging: Bulk
на замовлення 420 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 49+ | 448.01 грн |
| PEB3264FV1.4 |
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Виробник: Infineon Technologies
Description: SLIC FILTER
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: PG-TQFP-64-1
Part Status: Active
Number of Circuits: 2
Description: SLIC FILTER
Packaging: Bulk
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: PG-TQFP-64-1
Part Status: Active
Number of Circuits: 2
на замовлення 104 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 67+ | 320.22 грн |
| PEB 3264 F V1.4 |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE TQFP-64
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: PG-TQFP-64-1
Part Status: Obsolete
Number of Circuits: 2
Description: IC TELECOM INTERFACE TQFP-64
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Dual Channel Subscriber Line Interface Circuit (DuSLIC)
Interface: IOM-2, PCM
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.3V
Current - Supply: 105mA
Supplier Device Package: PG-TQFP-64-1
Part Status: Obsolete
Number of Circuits: 2
товару немає в наявності
Мінімальне замовлення: 160 шт
В кошику
од. на суму грн.
| S6E2HE6G0AGV2B000 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 120LQFP
Number of I/O: 100
Part Status: Active
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 544KB FLASH 120LQFP
Number of I/O: 100
Part Status: Active
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 24x12b; D/A 2x12b
Core Processor: ARM® Cortex®-M4F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 160MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| ISC037N03L5ISATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 20A/78A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Description: MOSFET N-CH 30V 20A/78A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 18.86 грн |
| 10000+ | 17.49 грн |
| ISC037N03L5ISATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 20A/78A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 20A/78A TDSON
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PG-TDSON-8-6
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 37W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
на замовлення 18934 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 52.69 грн |
| 10+ | 44.40 грн |
| 100+ | 34.03 грн |
| 500+ | 25.25 грн |
| 1000+ | 20.20 грн |
| 2000+ | 18.31 грн |
| IPG20N04S412ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-4
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TLS4120D0EPVXUMA1 |
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Виробник: Infineon Technologies
Description: OPTIREG SWITCHER
Description: OPTIREG SWITCHER
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| TLS4120D0EPVXUMA1 |
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Виробник: Infineon Technologies
Description: OPTIREG SWITCHER
Description: OPTIREG SWITCHER
на замовлення 5200 шт:
термін постачання 21-31 дні (днів)
| BFR181E6327 |
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Виробник: Infineon Technologies
Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 18.5dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: PG-SOT23
Part Status: Active
на замовлення 54000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3909+ | 6.20 грн |
| BFR181WE6327 |
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Виробник: Infineon Technologies
Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: SOT-323
Description: LOW-NOISE TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 19dB
Power - Max: 175mW
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 12V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
Frequency - Transition: 8GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Supplier Device Package: SOT-323
товару немає в наявності
В кошику
од. на суму грн.
| TLS850B0TEV33ATMA1 |
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Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 500MA PG-TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Qualification: AEC-Q100
Description: IC REG LIN 3.3V 500MA PG-TO252-5
Packaging: Cut Tape (CT)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 25 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Grade: Automotive
Part Status: Active
PSRR: 63dB (100Hz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 33 µA
Qualification: AEC-Q100
на замовлення 2938 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 101.51 грн |
| 10+ | 71.11 грн |
| 25+ | 64.50 грн |
| 100+ | 53.70 грн |
| 250+ | 50.45 грн |
| 500+ | 48.49 грн |
| 1000+ | 47.15 грн |
| SPP80N03S2L05 |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
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| IRLR2908TRLPBF-INF |
Виробник: Infineon Technologies
Description: IRLR2908 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
Description: IRLR2908 - HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 23A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D-Pak
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
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| BCR198E6327 |
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Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Description: BIPOLAR DIGITAL TRANSISTOR
на замовлення 147000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9616+ | 2.35 грн |
| BCR198TE6327 |
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Виробник: Infineon Technologies
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 27000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8955+ | 1.97 грн |
| BCR198WH6327 |
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Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Supplier Device Package: PG-SOT323-3-1
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 190 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 47 kOhms
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| AUIR3316S-INF |
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Виробник: Infineon Technologies
Description: LATCH BASED PERIPHERAL DRIVER, 1
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Battery
Description: LATCH BASED PERIPHERAL DRIVER, 1
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 5.5mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 26V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 23A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Battery
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| BGSA133GN10E6327XTSA1 |
Виробник: Infineon Technologies
Description: IC RF ANT DEVICE 10TSNP
Packaging: Bulk
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Function: Switch
Supplier Device Package: PG-TSNP-10-1
Description: IC RF ANT DEVICE 10TSNP
Packaging: Bulk
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Function: Switch
Supplier Device Package: PG-TSNP-10-1
на замовлення 255000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1024+ | 20.73 грн |
| BGSA11GN10E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SPST 5GHZ TSNP10-1
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPST
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.35dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 14dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 75dBm
Part Status: Active
Description: IC RF SWITCH SPST 5GHZ TSNP10-1
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPST
RF Type: General Purpose
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.35dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 14dB
Supplier Device Package: PG-TSNP-10-1
IIP3: 75dBm
Part Status: Active
на замовлення 2301 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.72 грн |
| 10+ | 30.97 грн |
| 25+ | 27.79 грн |
| 100+ | 22.82 грн |
| 250+ | 21.26 грн |
| 500+ | 20.32 грн |
| 1000+ | 19.22 грн |
| CY7C1041GN-10ZSXI |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 509 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 570.33 грн |
| 10+ | 487.35 грн |
| 25+ | 464.68 грн |
| 40+ | 425.56 грн |
| 135+ | 399.51 грн |
| 270+ | 385.36 грн |
| BGSA14GN10E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SP4T 5GHZ TSNP10-1
Features: Single Line Control
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.46dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
Description: IC RF SWITCH SP4T 5GHZ TSNP10-1
Features: Single Line Control
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.46dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
товару немає в наявності
Мінімальне замовлення: 7500 шт
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| BGSA14GN10E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SP4T 5GHZ TSNP10-1
Features: Single Line Control
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.46dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
Description: IC RF SWITCH SP4T 5GHZ TSNP10-1
Features: Single Line Control
Packaging: Cut Tape (CT)
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP4T
RF Type: Cellular, 3G, 4G
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.46dB
Frequency Range: 100MHz ~ 5GHz
Test Frequency: 2.69GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
на замовлення 5695 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 45.72 грн |
| 10+ | 30.97 грн |
| 25+ | 27.79 грн |
| 100+ | 22.82 грн |
| 250+ | 21.26 грн |
| 500+ | 20.32 грн |
| 1000+ | 19.22 грн |
| 2500+ | 18.42 грн |
| BGSA133GN10E6327XTSA1 |
Виробник: Infineon Technologies
Description: IC RF ANT DEVICE 10TSNP
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Function: Switch
Supplier Device Package: PG-TSNP-10-1
Description: IC RF ANT DEVICE 10TSNP
Packaging: Tape & Reel (TR)
Package / Case: 10-XFQFN
Mounting Type: Surface Mount
Function: Switch
Supplier Device Package: PG-TSNP-10-1
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| CY7C1041GN-10VXI |
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Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44SOJ
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 44-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Packaging: Tube
Description: IC SRAM 4MBIT PARALLEL 44SOJ
DigiKey Programmable: Not Verified
Memory Organization: 256K x 16
Access Time: 10 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Supplier Device Package: 44-SOJ
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 44-BSOJ (0.400", 10.16mm Width)
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 850 шт
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| BSD235N L6327 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 0.95A SOT363
Description: MOSFET 2N-CH 20V 0.95A SOT363
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| BSD235N L6327 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 0.95A SOT363
Description: MOSFET 2N-CH 20V 0.95A SOT363
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| BSC025N03LSGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
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Мінімальне замовлення: 5000 шт
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| BSC025N03LSGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
Description: MOSFET N-CH 30V 25A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 15 V
на замовлення 2015 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.31 грн |
| 10+ | 77.38 грн |
| 100+ | 52.26 грн |
| 500+ | 38.93 грн |
| 1000+ | 35.68 грн |
| 2000+ | 32.95 грн |
| BCM89071A1CUBXGT |
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Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLUETOOTH 42UFBGA
Description: IC RF TXRX+MCU BLUETOOTH 42UFBGA
товару немає в наявності
Мінімальне замовлення: 5000 шт
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| SPP07N600S5 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 400+ | 67.12 грн |
| IPB60R299CPAATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Qualification: AEC-Q101
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| IPB100N04S2L-03ATMA2 |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
на замовлення 17740 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 144+ | 161.96 грн |
| IPB100N04S2L03ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 25 V
Qualification: AEC-Q101
на замовлення 51328 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 144+ | 142.39 грн |
| IPB100N04S204ATMA4 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 100A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| IKCM20L60GBXKMA1 |
![]() |
Виробник: Infineon Technologies
Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Part Status: Active
Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Part Status: Active
на замовлення 6655 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 64+ | 322.25 грн |
| IKCM15H60HAXXMA1 |
Виробник: Infineon Technologies
Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Package / Case: 24-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18.5V
Applications: Fan Motor Driver
Technology: IGBT
Supplier Device Package: 24-DIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
Description: INTELLIGENT POWER MODULE (IPM)
Packaging: Bulk
Package / Case: 24-PowerDIP Module
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 18.5V
Applications: Fan Motor Driver
Technology: IGBT
Supplier Device Package: 24-DIP
Motor Type - Stepper: Multiphase
Motor Type - AC, DC: AC, Synchronous
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
| IKCM10H60HAXKMA1 |
![]() |
Виробник: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
Description: IFPS MODULES 24MDIP
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 10 A
Voltage: 600 V
на замовлення 624 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 414.23 грн |
| IKCM20L60HAXKMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT IPM 600V 20A 24-PWRDIP MOD
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
Description: IGBT IPM 600V 20A 24-PWRDIP MOD
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
на замовлення 513 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 594.33 грн |
| IKCM20L60HDXKMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT IPM 600V 20A 24-PWRDIP MOD
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
Description: IGBT IPM 600V 20A 24-PWRDIP MOD
Packaging: Bulk
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 20 A
Voltage: 600 V
на замовлення 560 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 815.85 грн |







































