Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148655) > Сторінка 357 з 2478
Фото | Назва | Виробник | Інформація |
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XMC1302Q024X0064ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 24VQFN Packaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 13x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-VQFN-24-19 Part Status: Active Number of I/O: 18 DigiKey Programmable: Not Verified |
на замовлення 12096 шт: термін постачання 21-31 дні (днів) |
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IPB04N03LAG | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
BSM75GB120DLCHOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 170A 690W Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 125°C Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A NTC Thermistor: No Supplier Device Package: Module Current - Collector (Ic) (Max): 170 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 690 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V |
на замовлення 4599 шт: термін постачання 21-31 дні (днів) |
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TLE5501E0001XUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Analog Voltage Operating Temperature: -40°C ~ 150°C (TA) Termination Style: Gull Wing Voltage - Supply: 2.7V ~ 5.5V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle Supplier Device Package: PG-DSO-8-16 Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous Output Signal: Cosine, Sine Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE5501E0001XUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: Analog Voltage Operating Temperature: -40°C ~ 150°C (TA) Termination Style: Gull Wing Voltage - Supply: 2.7V ~ 5.5V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle Supplier Device Package: PG-DSO-8-16 Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous Output Signal: Cosine, Sine Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5542 шт: термін постачання 21-31 дні (днів) |
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BAS 40-07 E6327 | Infineon Technologies |
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на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
IRG4BC40UPBF-INF | Infineon Technologies |
Description: ULTRAFAST SPEED IGBT Packaging: Bulk Part Status: Active |
на замовлення 64 шт: термін постачання 21-31 дні (днів) |
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BSO080P03NS3GXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3.1V @ 150µA Supplier Device Package: PG-DSO-8 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
IRFS30067PPBF | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
SIPC69SN60C3X2SA2 | Infineon Technologies |
Description: MOSFET Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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TLE6208-6GXUMA2 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 600mA Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (6) Voltage - Supply: 4.75V ~ 5.5V Applications: General Purpose Technology: DMOS Voltage - Load: 5.5V ~ 40V Supplier Device Package: PG-DSO-28-41 Motor Type - AC, DC: Brushed DC Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE62086G | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 600mA Interface: SPI Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (6) Voltage - Supply: 4.75V ~ 5.5V Applications: Automotive Technology: DMOS Voltage - Load: 5.5V ~ 40V Supplier Device Package: PG-DSO-28-41 Motor Type - AC, DC: Brushed DC Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC856AE6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23-3-1 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 330 mW Qualification: AEC-Q101 |
на замовлення 48000 шт: термін постачання 21-31 дні (днів) |
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BC856A-E6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT23-3-1 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 330 mW Qualification: AEC-Q101 |
на замовлення 18000 шт: термін постачання 21-31 дні (днів) |
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IGCM04B60HAXKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 24-PowerDIP Module (1.028", 26.10mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 4 A Voltage: 600 V |
на замовлення 280 шт: термін постачання 21-31 дні (днів) |
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IGCM04B60GAXKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 24-PowerDIP Module (1.028", 26.10mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 4 A Voltage: 600 V |
на замовлення 2143 шт: термін постачання 21-31 дні (днів) |
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IGCM06F60HAXKMA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: 24-PowerDIP Module (1.028", 26.10mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Part Status: Obsolete Current: 6 A Voltage: 600 V |
на замовлення 1915 шт: термін постачання 21-31 дні (днів) |
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IGCM10B60GAXKMA1 | Infineon Technologies |
Description: IGBT 600V 24MDIP Packaging: Tube Mounting Type: Through Hole Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SAF-TC1165-192F80HLAA | Infineon Technologies |
Description: RISC FLASH MICROCONTROLLER, 32 B Packaging: Bulk Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 1.5MB (1.5M x 8) RAM Size: 100K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: TriCore™ Data Converters: A/D 36x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V Connectivity: CANbus, SPI, UART/USART Peripherals: DMA, POR, WDT Supplier Device Package: PG-LQFP-176-2 Part Status: Active Number of I/O: 81 DigiKey Programmable: Not Verified |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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BC856UE6327HTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-74, SOT-457 Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: 150°C (TJ) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 65V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SC74-6 Part Status: Last Time Buy |
на замовлення 33999 шт: термін постачання 21-31 дні (днів) |
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IHW20N135R5XKSA | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 20A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/235ns Switching Energy: 950µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 170 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 60 A Power - Max: 288 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IHW20N135R3 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/335ns Switching Energy: -, 1.3mJ (off) Test Condition: 600V, 20A, 15Ohm, 15V Gate Charge: 195 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 60 A Power - Max: 310 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRL2203NPBF-INF | Infineon Technologies |
Description: HEXFET POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS70-04TE6327 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
на замовлення 33000 шт: термін постачання 21-31 дні (днів) |
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BB640E7907 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C Capacitance @ Vr, F: 3.3pF @ 28V, 1MHz Capacitance Ratio Condition: C2/C25 Supplier Device Package: PG-SOD323-2-1 Part Status: Active Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 16.6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BB640 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SKW15N60 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 279 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Supplier Device Package: PG-TO247-3-21 IGBT Type: NPT Td (on/off) @ 25°C: 32ns/234ns Switching Energy: 300µJ (on), 270µJ (off) Test Condition: 400V, 15A, 21Ohm, 15V Gate Charge: 76 nC Part Status: Active Current - Collector (Ic) (Max): 31 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 62 A Power - Max: 139 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR25602SPBF-INF | Infineon Technologies |
Description: IR25602 - HALF-BRIDGE DRIVER Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SO Rise / Fall Time (Typ): 100ns, 50ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 1 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 210mA, 360mA Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAS40-60B5000 | Infineon Technologies | Description: RECTIFIER DIODE, SCHOTTKY |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSZ065N06LS5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 20µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSZ065N06LS5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 20µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V |
на замовлення 9171 шт: термін постачання 21-31 дні (днів) |
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BSC065N06LS5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 20µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BSC065N06LS5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 20µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V |
на замовлення 10576 шт: термін постачання 21-31 дні (днів) |
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IPB065N06LG | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 80A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 2V @ 180µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BC817-40B5000 | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE49681KXTSA1 | Infineon Technologies |
![]() Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Bipolar Switch Operating Temperature: -40°C ~ 170°C (TJ) Voltage - Supply: 3V ~ 32V Technology: Hall Effect Sensing Range: 2.25mT Trip, -2.25mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SC59-3 Test Condition: 25°C |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLE49681KXTSA1 | Infineon Technologies |
![]() Features: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Output Type: Open Drain Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Bipolar Switch Operating Temperature: -40°C ~ 170°C (TJ) Voltage - Supply: 3V ~ 32V Technology: Hall Effect Sensing Range: 2.25mT Trip, -2.25mT Release Current - Output (Max): 25mA Current - Supply (Max): 2.5mA Supplier Device Package: PG-SC59-3 Test Condition: 25°C |
на замовлення 8777 шт: термін постачання 21-31 дні (днів) |
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SGW50N60HSFKSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A Supplier Device Package: PG-TO247-3-1 IGBT Type: NPT Td (on/off) @ 25°C: 47ns/310ns Switching Energy: 1.96mJ Test Condition: 400V, 50A, 6.8Ohm, 15V Gate Charge: 179 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 416 W |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
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BSC8899N03MS | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 45A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TDSON-8-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V |
на замовлення 4952 шт: термін постачання 21-31 дні (днів) |
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SGD02N60 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A Supplier Device Package: PG-TO252-3-11 IGBT Type: NPT Td (on/off) @ 25°C: 20ns/259ns Switching Energy: 36µJ (on), 28µJ (off) Test Condition: 400V, 2A, 118Ohm, 15V Gate Charge: 14 nC Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 12 A Power - Max: 30 W |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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IGC27T120T8LX1SA2 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IGT60R070D1ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Supplier Device Package: PG-HSOF-8-3 Part Status: Obsolete Vgs (Max): -10V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR21571PBF | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Frequency: 45.5kHz ~ 50.5kHz Type: Ballast Controller Operating Temperature: -40°C ~ 125°C Voltage - Supply: 10.5V ~ 16.5V Supplier Device Package: 16-DIP Dimming: No Part Status: Obsolete Current - Supply: 5.5 mA |
на замовлення 157800 шт: термін постачання 21-31 дні (днів) |
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PMB7720HV1.458PCC | Infineon Technologies |
Description: PMB7720HV DECT IC Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SAK-XC2236N-40F80LAA | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 320KB (320K x 8) RAM Size: 42K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 9x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-6 Part Status: Active Number of I/O: 38 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
SAK-XC2236N-40F80L AA | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 320KB (320K x 8) RAM Size: 42K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 9x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-6 Part Status: Active Number of I/O: 38 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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SAF-XC2236N-40F66L AB | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 66MHz Program Memory Size: 320KB (320K x 8) RAM Size: 42K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 9x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-6 Part Status: Obsolete Number of I/O: 38 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XC2236N40F66LAAFXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 66MHz Program Memory Size: 320KB (320K x 8) RAM Size: 42K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 9x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-64-6 Part Status: Obsolete Number of I/O: 38 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SGP20N60XKSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Supplier Device Package: PG-TO220-3-1 IGBT Type: NPT Td (on/off) @ 25°C: 36ns/225ns Switching Energy: 440µJ (on), 330µJ (off) Test Condition: 400V, 20A, 16Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 179 W |
на замовлення 5286 шт: термін постачання 21-31 дні (днів) |
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V29F040B-150JC | Infineon Technologies |
Description: IC MEMORY NOR Packaging: Bulk Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
ICE5QR2270AZXKLA1-ND | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DIP-7-6 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Control Features: Frequency Control, Soft Start Part Status: Active Power (Watts): 41 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ICE5QR4780BGXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DSO-12-21 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Active Power (Watts): 28 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ICE5QR4780BGXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DSO-12-21 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Active Power (Watts): 28 W |
на замовлення 2425 шт: термін постачання 21-31 дні (днів) |
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ICE5QR0680BGXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DSO-12-21 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Active Power (Watts): 77 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ICE5QR0680BGXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DSO-12-21 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Active Power (Watts): 77 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ICE5QSBGXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DSO-8 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Active Power (Watts): 109 W |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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ICE5QSBGXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DSO-8 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Active Power (Watts): 109 W |
на замовлення 3459 шт: термін постачання 21-31 дні (днів) |
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BCW67BE6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23-3-1 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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BCW67BE6327HTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23 Part Status: Not For New Designs Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW |
на замовлення 388951 шт: термін постачання 21-31 дні (днів) |
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BCW67C | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT23-3-1 Grade: Automotive Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 32 V Power - Max: 330 mW Qualification: AEC-Q101 |
на замовлення 176800 шт: термін постачання 21-31 дні (днів) |
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XMC1302Q024X0064ABXUMA1 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-24-19
Part Status: Active
Number of I/O: 18
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 24VQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-24-19
Part Status: Active
Number of I/O: 18
DigiKey Programmable: Not Verified
на замовлення 12096 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 185.42 грн |
10+ | 133.04 грн |
25+ | 121.60 грн |
100+ | 102.29 грн |
250+ | 96.65 грн |
500+ | 93.25 грн |
1000+ | 88.97 грн |
2500+ | 86.07 грн |
IPB04N03LAG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 55A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 60µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3877 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
BSM75GB120DLCHOSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 170A 690W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Description: IGBT MOD 1200V 170A 690W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 170 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 690 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
на замовлення 4599 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 5365.75 грн |
TLE5501E0001XUMA1 |
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Виробник: Infineon Technologies
Description: SENSOR ROTARY 360DEG 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 2.7V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR ROTARY 360DEG 8DSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 2.7V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 80.72 грн |
TLE5501E0001XUMA1 |
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Виробник: Infineon Technologies
Description: SENSOR ROTARY 360DEG 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 2.7V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR ROTARY 360DEG 8DSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Analog Voltage
Operating Temperature: -40°C ~ 150°C (TA)
Termination Style: Gull Wing
Voltage - Supply: 2.7V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle
Supplier Device Package: PG-DSO-8-16
Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
Output Signal: Cosine, Sine
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5542 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 131.31 грн |
5+ | 112.19 грн |
10+ | 106.90 грн |
25+ | 94.36 грн |
50+ | 90.29 грн |
100+ | 86.55 грн |
500+ | 77.77 грн |
1000+ | 75.03 грн |
BAS 40-07 E6327 |
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Виробник: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Description: RECTIFIER DIODE, SCHOTTKY
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
IRG4BC40UPBF-INF |
на замовлення 64 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
64+ | 153.27 грн |
BSO080P03NS3GXUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 12A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 15 V
Description: MOSFET P-CH 30V 12A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 14.8A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.1V @ 150µA
Supplier Device Package: PG-DSO-8
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 15 V
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IRFS30067PPBF |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-7, D²Pak (6 Leads + Tab), TO-263CB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 168A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8850 pF @ 50 V
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TLE6208-6GXUMA2 |
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Виробник: Infineon Technologies
Description: BRUSH DC MOTOR CONTROLLER
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 600mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 4.75V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-DSO-28-41
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: BRUSH DC MOTOR CONTROLLER
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 600mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 4.75V ~ 5.5V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-DSO-28-41
Motor Type - AC, DC: Brushed DC
Part Status: Active
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TLE62086G |
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Виробник: Infineon Technologies
Description: BRUSH DC MOTOR CONTROLLER
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 600mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 4.75V ~ 5.5V
Applications: Automotive
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-DSO-28-41
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: BRUSH DC MOTOR CONTROLLER
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 600mA
Interface: SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (6)
Voltage - Supply: 4.75V ~ 5.5V
Applications: Automotive
Technology: DMOS
Voltage - Load: 5.5V ~ 40V
Supplier Device Package: PG-DSO-28-41
Motor Type - AC, DC: Brushed DC
Part Status: Active
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BC856AE6327 |
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Виробник: Infineon Technologies
Description: TRANS PNP 65V 0.1A PG-SOT23-3-1
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
Qualification: AEC-Q101
Description: TRANS PNP 65V 0.1A PG-SOT23-3-1
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
Qualification: AEC-Q101
на замовлення 48000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10764+ | 2.20 грн |
BC856A-E6327 |
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Виробник: Infineon Technologies
Description: TRANS PNP 65V 0.1A PG-SOT23-3-1
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
Qualification: AEC-Q101
Description: TRANS PNP 65V 0.1A PG-SOT23-3-1
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT23-3-1
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 330 mW
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
10764+ | 2.20 грн |
IGCM04B60HAXKMA1 |
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Виробник: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 4 A
Voltage: 600 V
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 4 A
Voltage: 600 V
на замовлення 280 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
46+ | 506.62 грн |
IGCM04B60GAXKMA1 |
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Виробник: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 4 A
Voltage: 600 V
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 4 A
Voltage: 600 V
на замовлення 2143 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
40+ | 556.15 грн |
IGCM06F60HAXKMA1 |
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Виробник: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
Description: IGBT 600V 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Obsolete
Current: 6 A
Voltage: 600 V
на замовлення 1915 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
51+ | 456.58 грн |
IGCM10B60GAXKMA1 |
Виробник: Infineon Technologies
Description: IGBT 600V 24MDIP
Packaging: Tube
Mounting Type: Through Hole
Part Status: Obsolete
Description: IGBT 600V 24MDIP
Packaging: Tube
Mounting Type: Through Hole
Part Status: Obsolete
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SAF-TC1165-192F80HLAA |
Виробник: Infineon Technologies
Description: RISC FLASH MICROCONTROLLER, 32 B
Packaging: Bulk
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 100K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 36x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: CANbus, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-2
Part Status: Active
Number of I/O: 81
DigiKey Programmable: Not Verified
Description: RISC FLASH MICROCONTROLLER, 32 B
Packaging: Bulk
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 100K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: TriCore™
Data Converters: A/D 36x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.42V ~ 1.58V
Connectivity: CANbus, SPI, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LQFP-176-2
Part Status: Active
Number of I/O: 81
DigiKey Programmable: Not Verified
на замовлення 240 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
22+ | 1048.23 грн |
BC856UE6327HTSA1 |
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Виробник: Infineon Technologies
Description: TRANS 2PNP 65V 100MA PG-SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Part Status: Last Time Buy
Description: TRANS 2PNP 65V 100MA PG-SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SC74-6
Part Status: Last Time Buy
на замовлення 33999 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2908+ | 7.59 грн |
IHW20N135R5XKSA |
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Виробник: Infineon Technologies
Description: REVERSE CONDUCTING IGBT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 20A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/235ns
Switching Energy: 950µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 288 W
Description: REVERSE CONDUCTING IGBT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 20A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/235ns
Switching Energy: 950µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 288 W
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IHW20N135R3 |
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Виробник: Infineon Technologies
Description: REVERSE CONDUCTING IGBT W/MONOLT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/335ns
Switching Energy: -, 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 195 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 310 W
Description: REVERSE CONDUCTING IGBT W/MONOLT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/335ns
Switching Energy: -, 1.3mJ (off)
Test Condition: 600V, 20A, 15Ohm, 15V
Gate Charge: 195 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 310 W
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IRL2203NPBF-INF |
Виробник: Infineon Technologies
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Description: HEXFET POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
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BAS70-04TE6327 |
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на замовлення 33000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8510+ | 2.94 грн |
BB640E7907 |
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Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 3.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C2/C25
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 16.6
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C
Capacitance @ Vr, F: 3.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C2/C25
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 16.6
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BB640 |
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Виробник: Infineon Technologies
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Part Status: Active
Description: VARIABLE CAPACITANCE DIODE
Packaging: Bulk
Part Status: Active
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SKW15N60 |
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Виробник: Infineon Technologies
Description: IGBT, 31A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 279 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT
Td (on/off) @ 25°C: 32ns/234ns
Switching Energy: 300µJ (on), 270µJ (off)
Test Condition: 400V, 15A, 21Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 139 W
Description: IGBT, 31A I(C), 600V V(BR)CES, N
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 279 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT
Td (on/off) @ 25°C: 32ns/234ns
Switching Energy: 300µJ (on), 270µJ (off)
Test Condition: 400V, 15A, 21Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 62 A
Power - Max: 139 W
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IR25602SPBF-INF |
Виробник: Infineon Technologies
Description: IR25602 - HALF-BRIDGE DRIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IR25602 - HALF-BRIDGE DRIVER
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SO
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
Part Status: Active
DigiKey Programmable: Not Verified
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BAS40-60B5000 |
Виробник: Infineon Technologies
Description: RECTIFIER DIODE, SCHOTTKY
Description: RECTIFIER DIODE, SCHOTTKY
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BSZ065N06LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 37.77 грн |
BSZ065N06LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Description: MOSFET N-CH 60V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
на замовлення 9171 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 115.39 грн |
10+ | 79.70 грн |
100+ | 58.57 грн |
500+ | 43.58 грн |
1000+ | 38.89 грн |
2000+ | 36.84 грн |
BSC065N06LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 60V 64A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Description: MOSFET N-CHANNEL 60V 64A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 41.53 грн |
BSC065N06LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL 60V 64A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
Description: MOSFET N-CHANNEL 60V 64A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 32A, 10V
Power Dissipation (Max): 46W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 20µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 30 V
на замовлення 10576 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 131.31 грн |
10+ | 82.00 грн |
100+ | 61.63 грн |
500+ | 47.12 грн |
1000+ | 42.11 грн |
2000+ | 39.94 грн |
IPB065N06LG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 80A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 80A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 2V @ 180µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 30 V
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BC817-40B5000 |
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Виробник: Infineon Technologies
Description: BIPOLAR TRANSISTOR TRANSISTOR
Packaging: Bulk
Part Status: Active
Description: BIPOLAR TRANSISTOR TRANSISTOR
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
TLE49681KXTSA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 2.25mT Trip, -2.25mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Description: MAGNETIC SWITCH BIPOLAR SC59
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 2.25mT Trip, -2.25mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 32.76 грн |
TLE49681KXTSA1 |
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Виробник: Infineon Technologies
Description: MAGNETIC SWITCH BIPOLAR SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 2.25mT Trip, -2.25mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
Description: MAGNETIC SWITCH BIPOLAR SC59
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Open Drain
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 170°C (TJ)
Voltage - Supply: 3V ~ 32V
Technology: Hall Effect
Sensing Range: 2.25mT Trip, -2.25mT Release
Current - Output (Max): 25mA
Current - Supply (Max): 2.5mA
Supplier Device Package: PG-SC59-3
Test Condition: 25°C
на замовлення 8777 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 81.97 грн |
10+ | 59.16 грн |
25+ | 47.30 грн |
100+ | 40.70 грн |
500+ | 34.23 грн |
1000+ | 30.53 грн |
SGW50N60HSFKSA1 |
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Виробник: Infineon Technologies
Description: IGBT NPT 600V 100A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 47ns/310ns
Switching Energy: 1.96mJ
Test Condition: 400V, 50A, 6.8Ohm, 15V
Gate Charge: 179 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 416 W
Description: IGBT NPT 600V 100A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 47ns/310ns
Switching Energy: 1.96mJ
Test Condition: 400V, 50A, 6.8Ohm, 15V
Gate Charge: 179 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 416 W
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
101+ | 218.01 грн |
BSC8899N03MS |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 15 V
на замовлення 4952 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1039+ | 21.89 грн |
SGD02N60 |
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Виробник: Infineon Technologies
Description: IGBT, 6A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO252-3-11
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 36µJ (on), 28µJ (off)
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
Description: IGBT, 6A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 2A
Supplier Device Package: PG-TO252-3-11
IGBT Type: NPT
Td (on/off) @ 25°C: 20ns/259ns
Switching Energy: 36µJ (on), 28µJ (off)
Test Condition: 400V, 2A, 118Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 30 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
465+ | 47.16 грн |
IGC27T120T8LX1SA2 |
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Виробник: Infineon Technologies
Description: IGBT 1200V 25A DIE
Description: IGBT 1200V 25A DIE
товару немає в наявності
В кошику
од. на суму грн.
IGT60R070D1ATMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 600V 31A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Description: GANFET N-CH 600V 31A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Supplier Device Package: PG-HSOF-8-3
Part Status: Obsolete
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
IR21571PBF |
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Виробник: Infineon Technologies
Description: IC BALLAST CNTRL 50.5KHZ 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 45.5kHz ~ 50.5kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.5V ~ 16.5V
Supplier Device Package: 16-DIP
Dimming: No
Part Status: Obsolete
Current - Supply: 5.5 mA
Description: IC BALLAST CNTRL 50.5KHZ 16DIP
Packaging: Bulk
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 45.5kHz ~ 50.5kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 10.5V ~ 16.5V
Supplier Device Package: 16-DIP
Dimming: No
Part Status: Obsolete
Current - Supply: 5.5 mA
на замовлення 157800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
153+ | 144.61 грн |
SAK-XC2236N-40F80LAA |
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Виробник: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
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SAK-XC2236N-40F80L AA |
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Виробник: Infineon Technologies
Description: IC MCU 16/32B 320KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 320KB FLASH 64LQFP
Packaging: Bulk
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Active
Number of I/O: 38
DigiKey Programmable: Not Verified
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SAF-XC2236N-40F66L AB |
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Виробник: Infineon Technologies
Description: IC MCU 16/32B 320KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Obsolete
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 320KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Obsolete
Number of I/O: 38
DigiKey Programmable: Not Verified
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XC2236N40F66LAAFXUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 16/32B 320KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Obsolete
Number of I/O: 38
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 320KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 66MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Part Status: Obsolete
Number of I/O: 38
DigiKey Programmable: Not Verified
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SGP20N60XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT NPT 600V 40A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
Description: IGBT NPT 600V 40A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
на замовлення 5286 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
180+ | 116.85 грн |
V29F040B-150JC |
Виробник: Infineon Technologies
Description: IC MEMORY NOR
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC MEMORY NOR
Packaging: Bulk
Part Status: Obsolete
DigiKey Programmable: Not Verified
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ICE5QR2270AZXKLA1-ND |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH QUASI RESONANT
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7-6
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: Frequency Control, Soft Start
Part Status: Active
Power (Watts): 41 W
Description: IC OFFLINE SWITCH QUASI RESONANT
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7-6
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: Frequency Control, Soft Start
Part Status: Active
Power (Watts): 41 W
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ICE5QR4780BGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 28 W
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 28 W
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ICE5QR4780BGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 28 W
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 28 W
на замовлення 2425 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 138.47 грн |
10+ | 97.86 грн |
25+ | 89.05 грн |
100+ | 74.46 грн |
250+ | 70.12 грн |
500+ | 67.50 грн |
1000+ | 64.27 грн |
ICE5QR0680BGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 77 W
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 77 W
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ICE5QR0680BGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 77 W
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 77 W
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ICE5QSBGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 109 W
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 109 W
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 47.44 грн |
ICE5QSBGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 109 W
Description: IC OFFLINE SWITCH FLYBACK 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-8
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Active
Power (Watts): 109 W
на замовлення 3459 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 97.09 грн |
10+ | 67.90 грн |
25+ | 61.52 грн |
100+ | 51.13 грн |
250+ | 47.99 грн |
500+ | 46.09 грн |
1000+ | 43.79 грн |
BCW67BE6327 |
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Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5495+ | 3.98 грн |
BCW67BE6327HTSA1 |
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Виробник: Infineon Technologies
Description: TRANS PNP 32V 0.8A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Description: TRANS PNP 32V 0.8A PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
на замовлення 388951 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4508+ | 5.14 грн |
BCW67C |
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Виробник: Infineon Technologies
Description: TRANS 32V 0.8A PG-SOT23-3-1
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-1
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Qualification: AEC-Q101
Description: TRANS 32V 0.8A PG-SOT23-3-1
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT23-3-1
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 330 mW
Qualification: AEC-Q101
на замовлення 176800 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8510+ | 2.94 грн |