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SPU03N60C3 SPU03N60C3 Infineon Technologies Infineon-SPD03N60C3-DS-v02_06-NA.pdf?fileId=db3a3043191a246301192907f3b27f4b Description: POWER FIELD-EFFECT TRANSISTOR, 3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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MB89635PF-GT-255-BNDE1 Infineon Technologies Description: IC MCU 8BIT 16KB MROM 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: EBI/EMI, Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (14x20)
Part Status: Obsolete
Number of I/O: 53
DigiKey Programmable: Not Verified
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IRG4PC30KD IRG4PC30KD Infineon Technologies Infineon-IRG4PC30KD-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a401535643cb6d22c4 Description: IGBT 600V 28A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
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IRG4PC30K IRG4PC30K Infineon Technologies irg4pc30k.pdf Description: IGBT 600V 28A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 360µJ (on), 510µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
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IRG4PC30S IRG4PC30S Infineon Technologies Infineon-IRG4PC30S-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a401535643dbdd22c8 Description: IGBT 600V 34A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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IRF7488PBF IRF7488PBF Infineon Technologies irf7488pbf.pdf?fileId=5546d462533600a4015355ffa6da1c36 description Description: MOSFET N-CH 80V 6.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
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MB91195ABGL-G-278-ERE1 Infineon Technologies Description: IC MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
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MB91195ABGL-G-278-ERYE1 Infineon Technologies Description: IC MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
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MB90562APMC-G-278-JNE1 Infineon Technologies ProductGuide_2008.1.pdf Description: IC MICROCONTROLLER 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
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MB91195ABGL-G-278-K8ERE1 Infineon Technologies Description: IC MICROCONTROLLER
Packaging: Bulk
DigiKey Programmable: Not Verified
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BAT54WE6327 BAT54WE6327 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 30V 200MA PGSOT3233
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
8955+2.22 грн
Мінімальне замовлення: 8955
В кошику  од. на суму  грн.
BAT54WH6327XTSA1 BAT54WH6327XTSA1 Infineon Technologies BAT54_Series.pdf Description: DIODE SCHOTTK 30V 200MA PGSOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+7.39 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAT54WH6327 Infineon Technologies INFNS15399-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTT 30V 200MA SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
товару немає в наявності
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BAS4005E6433HTMA1 BAS4005E6433HTMA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 8709 шт:
термін постачання 21-31 дні (днів)
15+23.10 грн
24+13.76 грн
100+8.61 грн
500+5.97 грн
1000+5.29 грн
2000+4.72 грн
5000+4.03 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BAS4005WH6327XTSA1 BAS4005WH6327XTSA1 Infineon Technologies INFNS19700-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
на замовлення 29693 шт:
термін постачання 21-31 дні (днів)
15+23.10 грн
24+13.76 грн
100+8.61 грн
500+5.97 грн
1000+5.29 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
SPA15N65C3 SPA15N65C3 Infineon Technologies Infineon-SPA15N65C3-DS-v02_00-en.pdf?fileId=db3a304412b407950112b42eb47e4a23 Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
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BC857SH6327 BC857SH6327 Infineon Technologies INFNS16506-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
5602+4.46 грн
Мінімальне замовлення: 5602
В кошику  од. на суму  грн.
BC857SE6327 BC857SE6327 Infineon Technologies INFNS16381-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR GEN PURPOSE TRANSISTOR
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IRLR3110ZTRLPBF IRLR3110ZTRLPBF Infineon Technologies irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a Description: MOSFET N-CH 100V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+55.70 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRLR3110ZTRLPBF IRLR3110ZTRLPBF Infineon Technologies irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a Description: MOSFET N-CH 100V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
на замовлення 5950 шт:
термін постачання 21-31 дні (днів)
2+186.53 грн
10+115.77 грн
100+79.35 грн
500+59.85 грн
1000+55.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD90N06S405ATMA2 IPD90N06S405ATMA2 Infineon Technologies INFNS14108-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+44.24 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD90N06S405ATMA2 IPD90N06S405ATMA2 Infineon Technologies INFNS14108-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
3+159.15 грн
10+97.72 грн
100+66.37 грн
500+49.67 грн
1000+47.63 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD90N06S4L03ATMA2 IPD90N06S4L03ATMA2 Infineon Technologies Infineon-IPD90N06S4L_03-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203869e3b30c7d Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5555 шт:
термін постачання 21-31 дні (днів)
2+196.80 грн
10+122.44 грн
100+84.11 грн
500+64.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPI90N06S404AKSA2 IPI90N06S404AKSA2 Infineon Technologies IPx90N06S4-04.pdf Description: MOSFET N-CHANNEL_55/60V
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
188+120.37 грн
Мінімальне замовлення: 188
В кошику  од. на суму  грн.
IPD90N06S4-07ATMA2 Infineon Technologies Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
товару немає в наявності
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IPD90N06S404ATMA2 IPD90N06S404ATMA2 Infineon Technologies INFNS13309-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7948 шт:
термін постачання 21-31 дні (днів)
2+192.52 грн
10+119.64 грн
100+82.09 грн
500+62.17 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB90N06S4L04ATMA2 IPB90N06S4L04ATMA2 Infineon Technologies Infineon-I90N06S4L_04-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d111570ce3 Description: MOSFET N-CH 60V 90A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1365 шт:
термін постачання 21-31 дні (днів)
2+228.46 грн
10+142.88 грн
100+99.01 грн
500+78.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SGP20N60 SGP20N60 Infineon Technologies INFNS14174-1.pdf?t.download=true&u=5oefqw Description: IGBT, 40A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
товару немає в наявності
В кошику  од. на суму  грн.
IRLR024NTRLPBF IRLR024NTRLPBF Infineon Technologies infineon-irlr024n-datasheet-en.pdf Description: MOSFET N-CH 55V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPG20N04S412AATMA1 IPG20N04S412AATMA1 Infineon Technologies INFNS28023-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11250 шт:
термін постачання 21-31 дні (днів)
3+119.79 грн
10+73.00 грн
100+48.85 грн
500+36.10 грн
1000+32.97 грн
2000+32.35 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS70401EPAXUMA1 BTS70401EPAXUMA1 Infineon Technologies Infineon-BTS7040-1EPA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb0163fe8f965308bc Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
3000+41.40 грн
6000+38.97 грн
9000+38.51 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ISC011N03L5SATMA1 ISC011N03L5SATMA1 Infineon Technologies Infineon-ISC011N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6d6d80982 Description: MOSFET N-CH 30V 37A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
на замовлення 14972 шт:
термін постачання 21-31 дні (днів)
7+56.47 грн
10+48.12 грн
100+39.46 грн
500+35.82 грн
1000+33.39 грн
2000+33.10 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BCR116SE6327 BCR116SE6327 Infineon Technologies INFNS16384-1.pdf?t.download=true&u=5oefqw Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
TLE4276V TLE4276V Infineon Technologies Infineon-TLE4276-DS-v02_80-EN.pdf?fileId=5546d4626102d35a01612c4b988a6576 Description: IC REG LINEAR POS ADJ TO220-5-11
Packaging: Bulk
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-5-11
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Grade: Automotive
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
300+93.28 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
BCR146E6327 BCR146E6327 Infineon Technologies INFNS11374-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товару немає в наявності
В кошику  од. на суму  грн.
BCR146 BCR146 Infineon Technologies INFNS16385-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
BCR146T E6327 BCR146T E6327 Infineon Technologies INFNS18599-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
7059+2.96 грн
Мінімальне замовлення: 7059
В кошику  од. на суму  грн.
BCR 146L3 E6327 BCR 146L3 E6327 Infineon Technologies BCR146%20%282006%29.pdf Description: TRANS PREBIAS NPN 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
BCR 146T E6327 BCR 146T E6327 Infineon Technologies BCR146%20%282006%29.pdf Description: TRANS PREBIAS NPN 50V 0.07A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
товару немає в наявності
В кошику  од. на суму  грн.
TC1738192F80HLADKXUMA1 Infineon Technologies Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
товару немає в наявності
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IRL1404PBF-INF IRL1404PBF-INF Infineon Technologies IRSDS11319-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 25 V
на замовлення 796 шт:
термін постачання 21-31 дні (днів)
179+121.34 грн
Мінімальне замовлення: 179
В кошику  од. на суму  грн.
IRL100HS121 IRL100HS121 Infineon Technologies Infineon-IRL100HS121-DS-v01_04-EN.pdf?fileId=5546d46259d9a4bf015a4b31f85e118e Description: MOSFET N-CH 100V 11A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
4000+18.90 грн
8000+16.86 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRL100HS121 IRL100HS121 Infineon Technologies Infineon-IRL100HS121-DS-v01_04-EN.pdf?fileId=5546d46259d9a4bf015a4b31f85e118e Description: MOSFET N-CH 100V 11A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
на замовлення 8855 шт:
термін постачання 21-31 дні (днів)
5+81.29 грн
10+48.61 грн
100+31.86 грн
500+23.15 грн
1000+20.98 грн
2000+19.15 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BCV27E6327 BCV27E6327 Infineon Technologies INFNS10762-1.pdf?t.download=true&u=5oefqw Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 160602 шт:
термін постачання 21-31 дні (днів)
4691+4.86 грн
Мінімальне замовлення: 4691
В кошику  од. на суму  грн.
IPD100N06S403ATMA2 IPD100N06S403ATMA2 Infineon Technologies INFNS14378-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 100A TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3082 шт:
термін постачання 21-31 дні (днів)
2+196.80 грн
10+122.44 грн
100+84.11 грн
500+64.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BCM846SH6327 Infineon Technologies Infineon-BCM846S-DS-v01_01-en.pdf?fileId=db3a30431441fb5d011449d337210244 Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
товару немає в наявності
В кошику  од. на суму  грн.
TLE4729GNT Infineon Technologies Description: IC MOTOR DRIVER PAR 24DSO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
В кошику  од. на суму  грн.
IRF8721TRPBF-1 IRF8721TRPBF-1 Infineon Technologies IRF8721PbF-1_10-2-13.pdf Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
товару немає в наявності
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TLE4251GATMA1 TLE4251GATMA1 Infineon Technologies Infineon-TLE4251-DataSheet-v03_10-EN.pdf?fileId=5546d46259d9a4bf0159f918181239ff Description: IC REG LIN POS ADJ 400MA TO263-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 20 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 620 шт:
термін постачання 21-31 дні (днів)
2+174.56 грн
10+124.91 грн
25+114.00 грн
100+95.78 грн
250+90.44 грн
500+87.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE8251VSJXUMA1 TLE8251VSJXUMA1 Infineon Technologies Infineon-TLE8251VSJ-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d1b194c5ee3 Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 2Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+91.29 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SPB80N03S2L-05 SPB80N03S2L-05 Infineon Technologies SP%28B%2CI%2CP%2980N03S2L-05.pdf Description: MOSFET N-CH 30V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 110µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
на замовлення 75780 шт:
термін постачання 21-31 дні (днів)
545+39.72 грн
Мінімальне замовлення: 545
В кошику  од. на суму  грн.
SPB80N03S2L05 SPB80N03S2L05 Infineon Technologies spp_b_80n03s2l-05_1.pdf?t.download=true&u=5oefqw Description: 80A, 30V, N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 110µA
Supplier Device Package: PG-TO263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
на замовлення 72559 шт:
термін постачання 21-31 дні (днів)
545+39.72 грн
Мінімальне замовлення: 545
В кошику  од. на суму  грн.
IPB80N03S4L-03ATMA1 IPB80N03S4L-03ATMA1 Infineon Technologies INFNS14810-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
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IPB80N03S4L03 IPB80N03S4L03 Infineon Technologies INFNS14810-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
272+89.09 грн
Мінімальне замовлення: 272
В кошику  од. на суму  грн.
IPB80N04S2-H4ATMA2 Infineon Technologies INFNS11807-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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IPB80N04S2H4-ATMA2 IPB80N04S2H4-ATMA2 Infineon Technologies INFNS11807-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
на замовлення 161 шт:
термін постачання 21-31 дні (днів)
161+164.40 грн
Мінімальне замовлення: 161
В кошику  од. на суму  грн.
IPB80N04S3-04 IPB80N04S3-04 Infineon Technologies INFNS10666-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
225+115.00 грн
Мінімальне замовлення: 225
В кошику  од. на суму  грн.
BAS7004SH6327XTSA1 BAS7004SH6327XTSA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 70V SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT363-PO
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+7.60 грн
6000+6.64 грн
9000+6.30 грн
15000+5.55 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAS7004SH6327XTSA1 BAS7004SH6327XTSA1 Infineon Technologies INFNS30154-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 70V SOT363-PO
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT363-PO
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 15704 шт:
термін постачання 21-31 дні (днів)
10+35.08 грн
17+20.52 грн
100+12.98 грн
500+9.12 грн
1000+8.13 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
TT142N16KOFHPSA1 TT142N16KOFHPSA1 Infineon Technologies TT142N.pdf Description: SCR MODULE 1.6KV 230A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 142 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
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SPU03N60C3 Infineon-SPD03N60C3-DS-v02_06-NA.pdf?fileId=db3a3043191a246301192907f3b27f4b
SPU03N60C3
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 135µA
Supplier Device Package: PG-TO251-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
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MB89635PF-GT-255-BNDE1
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 64QFP
Packaging: Tray
Package / Case: 64-BQFP
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: EBI/EMI, Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 64-QFP (14x20)
Part Status: Obsolete
Number of I/O: 53
DigiKey Programmable: Not Verified
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IRG4PC30KD Infineon-IRG4PC30KD-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a401535643cb6d22c4
IRG4PC30KD
Виробник: Infineon Technologies
Description: IGBT 600V 28A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 600µJ (on), 580µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
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IRG4PC30K irg4pc30k.pdf
IRG4PC30K
Виробник: Infineon Technologies
Description: IGBT 600V 28A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 360µJ (on), 510µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
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IRG4PC30S Infineon-IRG4PC30S-DataSheet-v01_00-EN.pdf?fileId=5546d462533600a401535643dbdd22c8
IRG4PC30S
Виробник: Infineon Technologies
Description: IGBT 600V 34A TO-247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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IRF7488PBF description irf7488pbf.pdf?fileId=5546d462533600a4015355ffa6da1c36
IRF7488PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 6.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
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MB91195ABGL-G-278-ERE1
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
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MB91195ABGL-G-278-ERYE1
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
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MB90562APMC-G-278-JNE1 ProductGuide_2008.1.pdf
Виробник: Infineon Technologies
Description: IC MICROCONTROLLER 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 8x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: UART/USART
Peripherals: POR, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 51
DigiKey Programmable: Not Verified
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MB91195ABGL-G-278-K8ERE1
Виробник: Infineon Technologies
Description: IC MICROCONTROLLER
Packaging: Bulk
DigiKey Programmable: Not Verified
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BAT54WE6327 INFNS15399-1.pdf?t.download=true&u=5oefqw
BAT54WE6327
Виробник: Infineon Technologies
Description: DIODE SCHOTT 30V 200MA PGSOT3233
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 21000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8955+2.22 грн
Мінімальне замовлення: 8955
В кошику  од. на суму  грн.
BAT54WH6327XTSA1 BAT54_Series.pdf
BAT54WH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTK 30V 200MA PGSOT323
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.39 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAT54WH6327 INFNS15399-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: DIODE SCHOTT 30V 200MA SOT323-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: PG-SOT323-3
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
товару немає в наявності
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BAS4005E6433HTMA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4005E6433HTMA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 8709 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+23.10 грн
24+13.76 грн
100+8.61 грн
500+5.97 грн
1000+5.29 грн
2000+4.72 грн
5000+4.03 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
BAS4005WH6327XTSA1 INFNS19700-1.pdf?t.download=true&u=5oefqw
BAS4005WH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 40V 120MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Qualification: AEC-Q101
на замовлення 29693 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+23.10 грн
24+13.76 грн
100+8.61 грн
500+5.97 грн
1000+5.29 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
SPA15N65C3 Infineon-SPA15N65C3-DS-v02_00-en.pdf?fileId=db3a304412b407950112b42eb47e4a23
SPA15N65C3
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 9.4A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 675µA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
BC857SH6327 INFNS16506-1.pdf?t.download=true&u=5oefqw
BC857SH6327
Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5602+4.46 грн
Мінімальне замовлення: 5602
В кошику  од. на суму  грн.
BC857SE6327 INFNS16381-1.pdf?t.download=true&u=5oefqw
BC857SE6327
Виробник: Infineon Technologies
Description: BIPOLAR GEN PURPOSE TRANSISTOR
товару немає в наявності
В кошику  од. на суму  грн.
IRLR3110ZTRLPBF irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a
IRLR3110ZTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+55.70 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRLR3110ZTRLPBF irlr3110zpbf.pdf?fileId=5546d462533600a40153566cf6e2268a
IRLR3110ZTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3980 pF @ 25 V
на замовлення 5950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+186.53 грн
10+115.77 грн
100+79.35 грн
500+59.85 грн
1000+55.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPD90N06S405ATMA2 INFNS14108-1.pdf?t.download=true&u=5oefqw
IPD90N06S405ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+44.24 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD90N06S405ATMA2 INFNS14108-1.pdf?t.download=true&u=5oefqw
IPD90N06S405ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 4V @ 60µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+159.15 грн
10+97.72 грн
100+66.37 грн
500+49.67 грн
1000+47.63 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD90N06S4L03ATMA2 Infineon-IPD90N06S4L_03-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203869e3b30c7d
IPD90N06S4L03ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5555 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+196.80 грн
10+122.44 грн
100+84.11 грн
500+64.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPI90N06S404AKSA2 IPx90N06S4-04.pdf
IPI90N06S404AKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL_55/60V
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 25000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
188+120.37 грн
Мінімальне замовлення: 188
В кошику  од. на суму  грн.
IPD90N06S4-07ATMA2
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
товару немає в наявності
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IPD90N06S404ATMA2 INFNS13309-1.pdf?t.download=true&u=5oefqw
IPD90N06S404ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7948 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+192.52 грн
10+119.64 грн
100+82.09 грн
500+62.17 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPB90N06S4L04ATMA2 Infineon-I90N06S4L_04-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d111570ce3
IPB90N06S4L04ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1365 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+228.46 грн
10+142.88 грн
100+99.01 грн
500+78.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SGP20N60 INFNS14174-1.pdf?t.download=true&u=5oefqw
SGP20N60
Виробник: Infineon Technologies
Description: IGBT, 40A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/225ns
Switching Energy: 440µJ (on), 330µJ (off)
Test Condition: 400V, 20A, 16Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 179 W
товару немає в наявності
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IRLR024NTRLPBF infineon-irlr024n-datasheet-en.pdf
IRLR024NTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
IPG20N04S412AATMA1 INFNS28023-1.pdf?t.download=true&u=5oefqw
IPG20N04S412AATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 25V
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 15µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 11250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+119.79 грн
10+73.00 грн
100+48.85 грн
500+36.10 грн
1000+32.97 грн
2000+32.35 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BTS70401EPAXUMA1 Infineon-BTS7040-1EPA-DS-v01_00-EN.pdf?fileId=5546d462636cc8fb0163fe8f965308bc
BTS70401EPAXUMA1
Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 19mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 4.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Over Current, Over Voltage, Short Circuit, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+41.40 грн
6000+38.97 грн
9000+38.51 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ISC011N03L5SATMA1 Infineon-ISC011N03L5S-DataSheet-v02_00-EN.pdf?fileId=5546d46270c4f93e0170e8a6d6d80982
ISC011N03L5SATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 37A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
на замовлення 14972 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+56.47 грн
10+48.12 грн
100+39.46 грн
500+35.82 грн
1000+33.39 грн
2000+33.10 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
BCR116SE6327 INFNS16384-1.pdf?t.download=true&u=5oefqw
BCR116SE6327
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Frequency - Transition: 150MHz
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
товару немає в наявності
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TLE4276V Infineon-TLE4276-DS-v02_80-EN.pdf?fileId=5546d4626102d35a01612c4b988a6576
TLE4276V
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ TO220-5-11
Packaging: Bulk
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 220 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO220-5-11
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Inhibit
Grade: Automotive
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Antisaturation, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
300+93.28 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
BCR146E6327 INFNS11374-1.pdf?t.download=true&u=5oefqw
BCR146E6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
товару немає в наявності
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BCR146 INFNS16385-1.pdf?t.download=true&u=5oefqw
BCR146
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
товару немає в наявності
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BCR146T E6327 INFNS18599-1.pdf?t.download=true&u=5oefqw
BCR146T E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SOT23-3-3
Part Status: Active
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 24000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7059+2.96 грн
Мінімальне замовлення: 7059
В кошику  од. на суму  грн.
BCR 146L3 E6327 BCR146%20%282006%29.pdf
BCR 146L3 E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V TSLP-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-TSLP-3-4
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
товару немає в наявності
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BCR 146T E6327 BCR146%20%282006%29.pdf
BCR 146T E6327
Виробник: Infineon Technologies
Description: TRANS PREBIAS NPN 50V 0.07A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 70 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 150 MHz
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): 22 kOhms
Resistors Included: R1 and R2
товару немає в наявності
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TC1738192F80HLADKXUMA1
Виробник: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IRL1404PBF-INF IRSDS11319-1.pdf?t.download=true&u=5oefqw
IRL1404PBF-INF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 25 V
на замовлення 796 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
179+121.34 грн
Мінімальне замовлення: 179
В кошику  од. на суму  грн.
IRL100HS121 Infineon-IRL100HS121-DS-v01_04-EN.pdf?fileId=5546d46259d9a4bf015a4b31f85e118e
IRL100HS121
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 11A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+18.90 грн
8000+16.86 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRL100HS121 Infineon-IRL100HS121-DS-v01_04-EN.pdf?fileId=5546d46259d9a4bf015a4b31f85e118e
IRL100HS121
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 11A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 6.7A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 50 V
на замовлення 8855 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+81.29 грн
10+48.61 грн
100+31.86 грн
500+23.15 грн
1000+20.98 грн
2000+19.15 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
BCV27E6327 INFNS10762-1.pdf?t.download=true&u=5oefqw
BCV27E6327
Виробник: Infineon Technologies
Description: BIPOLAR DIGITAL TRANSISTOR
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 170MHz
Supplier Device Package: PG-SOT23-3-1
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 360 mW
Grade: Automotive
Qualification: AEC-Q101
на замовлення 160602 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4691+4.86 грн
Мінімальне замовлення: 4691
В кошику  од. на суму  грн.
IPD100N06S403ATMA2 INFNS14378-1.pdf?t.download=true&u=5oefqw
IPD100N06S403ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 100A TO252-3-11
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10400 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3082 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+196.80 грн
10+122.44 грн
100+84.11 грн
500+64.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BCM846SH6327 Infineon-BCM846S-DS-v01_01-en.pdf?fileId=db3a30431441fb5d011449d337210244
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT363-6-1
Part Status: Active
товару немає в наявності
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TLE4729GNT
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER PAR 24DSO
Packaging: Tape & Reel (TR)
Part Status: Obsolete
товару немає в наявності
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IRF8721TRPBF-1 IRF8721PbF-1_10-2-13.pdf
IRF8721TRPBF-1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 15 V
товару немає в наявності
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TLE4251GATMA1 Infineon-TLE4251-DataSheet-v03_10-EN.pdf?fileId=5546d46259d9a4bf0159f918181239ff
TLE4251GATMA1
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 400MA TO263-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO263-5-1
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 20 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 620 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+174.56 грн
10+124.91 грн
25+114.00 грн
100+95.78 грн
250+90.44 грн
500+87.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE8251VSJXUMA1 Infineon-TLE8251VSJ-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf015a3d1b194c5ee3
TLE8251VSJXUMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER 1/1 PGDSO8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Number of Drivers/Receivers: 1/1
Data Rate: 2Mbps
Protocol: CANbus
Supplier Device Package: PG-DSO-8
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+91.29 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SPB80N03S2L-05 SP%28B%2CI%2CP%2980N03S2L-05.pdf
SPB80N03S2L-05
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 110µA
Supplier Device Package: PG-TO263-3-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
на замовлення 75780 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
545+39.72 грн
Мінімальне замовлення: 545
В кошику  од. на суму  грн.
SPB80N03S2L05 spp_b_80n03s2l-05_1.pdf?t.download=true&u=5oefqw
SPB80N03S2L05
Виробник: Infineon Technologies
Description: 80A, 30V, N-CHANNEL, MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 55A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 110µA
Supplier Device Package: PG-TO263-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 89.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3320 pF @ 25 V
на замовлення 72559 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
545+39.72 грн
Мінімальне замовлення: 545
В кошику  од. на суму  грн.
IPB80N03S4L-03ATMA1 INFNS14810-1.pdf?t.download=true&u=5oefqw
IPB80N03S4L-03ATMA1
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
товару немає в наявності
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IPB80N03S4L03 INFNS14810-1.pdf?t.download=true&u=5oefqw
IPB80N03S4L03
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 45µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
272+89.09 грн
Мінімальне замовлення: 272
В кошику  од. на суму  грн.
IPB80N04S2-H4ATMA2 INFNS11807-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
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IPB80N04S2H4-ATMA2 INFNS11807-1.pdf?t.download=true&u=5oefqw
IPB80N04S2H4-ATMA2
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
на замовлення 161 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
161+164.40 грн
Мінімальне замовлення: 161
В кошику  од. на суму  грн.
IPB80N04S3-04 INFNS10666-1.pdf?t.download=true&u=5oefqw
IPB80N04S3-04
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 80A TO263-3
Packaging: Bulk
Package / Case: TO-263-4, D²Pak (3 Leads + Tab), TO-263AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 80A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 90µA
Supplier Device Package: PG-TO263-3-1
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
225+115.00 грн
Мінімальне замовлення: 225
В кошику  од. на суму  грн.
BAS7004SH6327XTSA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7004SH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 70V SOT363-PO
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT363-PO
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.60 грн
6000+6.64 грн
9000+6.30 грн
15000+5.55 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAS7004SH6327XTSA1 INFNS30154-1.pdf?t.download=true&u=5oefqw
BAS7004SH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 70V SOT363-PO
Packaging: Cut Tape (CT)
Package / Case: 6-VSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 100 ps
Technology: Schottky
Diode Configuration: 2 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70mA (DC)
Supplier Device Package: PG-SOT363-PO
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
на замовлення 15704 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+35.08 грн
17+20.52 грн
100+12.98 грн
500+9.12 грн
1000+8.13 грн
Мінімальне замовлення: 10
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TT142N16KOFHPSA1 TT142N.pdf
TT142N16KOFHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 230A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 142 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.6 kV
товару немає в наявності
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