Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (122998) > Сторінка 389 з 2050
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRL530NSTRRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 17A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
IRL530NSTRRPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 17A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V Power Dissipation (Max): 3.8W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
IPDD60R125CFD7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 27A HDSOP-10Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-HDSOP-10-1 Vgs(th) (Max) @ Id: 4.5V @ 340µA Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1700 шт В кошику од. на суму грн. | ||||||||||||||
|
IPDD60R125CFD7XTMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 27A HDSOP-10Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: PG-HDSOP-10-1 Vgs(th) (Max) @ Id: 4.5V @ 340µA |
на замовлення 1688 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BSS126IXTSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 21MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 8µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BSS126IXTSA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 21MA SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.7V @ 8µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V |
на замовлення 4285 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| BSS126 H6906 | Infineon Technologies |
Description: SMALL SIGNAL N-CHANNEL MOSFET |
товару немає в наявності |
Мінімальне замовлення: 1181 шт В кошику од. на суму грн. | |||||||||||||||
|
TDA4916GG | Infineon Technologies |
Description: SWITCHING CONTROLLERPackaging: Bulk Part Status: Active |
на замовлення 667 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BTS5210G | Infineon Technologies |
Description: BUFFER/INVERTER BASED PERIPHERALPart Status: Active Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Supplier Device Package: PG-DSO-14 Ratio - Input:Output: 1:1 Current - Output (Max): 1.8A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 5.5V ~ 40V Input Type: Non-Inverting Rds On (Typ): 110mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 150°C (TJ) Switch Type: General Purpose Interface: On/Off Number of Outputs: 2 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| PX8897EDQGR2ER1232AXUMA1 | Infineon Technologies | Description: IC REGULATOR PG-VQFN-48-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| PX8897EDQGR2ER1233AXUMA1 | Infineon Technologies | Description: IC REGULATOR PG-VQFN-48-2 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
FF300R12KE4B2HOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 460A 1600W MODPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 460 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 1600 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 19 nF @ 25 V |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ADM6992X-AD-T-1 | Infineon Technologies |
Description: IC ETHERNET CONVERTER 128QFPDigiKey Programmable: Not Verified Package / Case: 128-BFQFP Packaging: Tray Part Status: Obsolete Supplier Device Package: PG-BFQFP-128 Standards: 10/100 Base-FX/T/TX PHY Protocol: Ethernet Voltage - Supply: 3.135V ~ 3.465V Operating Temperature: 0°C ~ 115°C Function: Switch |
на замовлення 384 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
ADM6992KX-AB-T-1-INF | Infineon Technologies |
Description: NINJA: FIBER TO FAST ETHERNET CODigiKey Programmable: Not Verified Part Status: Active Packaging: Tray |
на замовлення 2486 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IRFS7534TRLPBF | Infineon Technologies |
Description: MOSFET N CH 60V 195A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO263-7 Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IRFS7534TRLPBF | Infineon Technologies |
Description: MOSFET N CH 60V 195A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: PG-TO263-7 Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 294W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) |
на замовлення 2061 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IRFS7534TRL7PP | Infineon Technologies |
Description: MOSFET N CH 60V 240A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: D2PAK (7-Lead) Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
IRFS7534TRL7PP | Infineon Technologies |
Description: MOSFET N CH 60V 240A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: D2PAK (7-Lead) Vgs(th) (Max) @ Id: 3.7V @ 250µA Power Dissipation (Max): 290W (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 240A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
SAF-XC836M-1FRIAB | Infineon Technologies |
Description: XC800 I-FAMILY MICROCONTROLLER ,Core Processor: XC800 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 512 x 8 Program Memory Size: 4KB (4K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.173", 4.40mm Width) Packaging: Bulk Number of I/O: 25 Part Status: Active Supplier Device Package: PG-TSSOP-28-1 Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT Connectivity: I2C, SSC, UART/USART Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x10b DigiKey Programmable: Not Verified |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| SAK-XC836MT-2FRAAB | Infineon Technologies |
Description: XC800 I-FAMILY MICROCONTROLLER ,Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 512 x 8 Program Memory Size: 8KB (8K x 8) Speed: 24MHz Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.173", 4.40mm Width) Packaging: Bulk Number of I/O: 25 Part Status: Active Supplier Device Package: PG-TSSOP-28-1 Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT Connectivity: I²C, SSC, UART/USART Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 8x10b Core Processor: XC800 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
6ED003L06FXUMA1 | Infineon Technologies |
Description: 6ED003L06 - HALF-BRIDGE BASED MOPackaging: Bulk Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 13V ~ 17.5V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 620 V Supplier Device Package: PG-DSO-28-17 Rise / Fall Time (Typ): 60ns, 26ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel, P-Channel) Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 165mA, 375mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 19812 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| 6ED003L06-FXUMA1 | Infineon Technologies |
Description: 6ED003L06 - HALF-BRIDGE BASED MO Driven Configuration: Half-Bridge Channel Type: 3-Phase Rise / Fall Time (Typ): 60ns, 26ns Supplier Device Package: PG-TSSOP-28 High Side Voltage - Max (Bootstrap): 620 V Input Type: Non-Inverting Voltage - Supply: 13V ~ 17.5V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.173", 4.40mm Width) Packaging: Bulk Part Status: Active Current - Peak Output (Source, Sink): 165mA, 375mA Logic Voltage - VIL, VIH: 1.1V, 1.7V Gate Type: IGBT, N-Channel, P-Channel MOSFET Number of Drivers: 6 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| 111-4204PBF | Infineon Technologies | Description: IC REGULATOR SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| SIDC73D170E6X1SA2 | Infineon Technologies |
Description: DIODE GEN PURP 1.7KV 100A WAFER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
BBY 56-02W E6127 | Infineon Technologies |
Description: DIODE TUNING 10V 20MA SCD-80Packaging: Tape & Reel (TR) Package / Case: SC-80 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz Capacitance Ratio Condition: C1/C3 Supplier Device Package: SCD-80 Part Status: Discontinued at Digi-Key Voltage - Peak Reverse (Max): 10 V Capacitance Ratio: 3.3 |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||||
|
TLE7183QUXUMB1 | Infineon Technologies |
Description: DRIVER_ICGrade: Automotive Motor Type - AC, DC: Brushless DC (BLDC) Supplier Device Package: PG-TQFP-48-8 Technology: Power MOSFET Voltage - Supply: 5.5V ~ 20V Output Configuration: Pre-Driver - Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Parallel Function: Controller - Commutation, Direction Management Mounting Type: Surface Mount Package / Case: 48-TQFP Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
TLE7183QUXUMA8 | Infineon Technologies |
Description: DRIVER_ICVoltage - Supply: 5.5V ~ 20V Output Configuration: Pre-Driver - Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Parallel Function: Controller - Commutation, Direction Management Mounting Type: Surface Mount Package / Case: 48-TQFP Exposed Pad Packaging: Tape & Reel (TR) Grade: Automotive Motor Type - AC, DC: Brushless DC (BLDC) Supplier Device Package: PG-TQFP-48-8 Technology: Power MOSFET |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
TLE7183QUXUMA6 | Infineon Technologies |
Description: DRIVER_ICGrade: Automotive Motor Type - AC, DC: Brushless DC (BLDC) Supplier Device Package: PG-TQFP-48-8 Technology: Power MOSFET Voltage - Supply: 5.5V ~ 20V Output Configuration: Pre-Driver - Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Parallel Function: Controller - Commutation, Direction Management Mounting Type: Surface Mount Package / Case: 48-TQFP Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
TLE7183QUXUMA9 | Infineon Technologies |
Description: DRIVER_ICGrade: Automotive Motor Type - AC, DC: Brushless DC (BLDC) Supplier Device Package: PG-TQFP-48-8 Technology: Power MOSFET Voltage - Supply: 5.5V ~ 20V Output Configuration: Pre-Driver - Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Parallel Function: Controller - Commutation, Direction Management Mounting Type: Surface Mount Package / Case: 48-TQFP Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
TLE7183QUXUMA7 | Infineon Technologies |
Description: DRIVER_ICGrade: Automotive Motor Type - AC, DC: Brushless DC (BLDC) Supplier Device Package: PG-TQFP-48-8 Technology: Power MOSFET Voltage - Supply: 5.5V ~ 20V Output Configuration: Pre-Driver - Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Parallel Function: Controller - Commutation, Direction Management Mounting Type: Surface Mount Package / Case: 48-TQFP Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
FF6MR12W2M1PB11BPSA1 | Infineon Technologies |
Description: MOSFET 2N-CH 1200V 200APart Status: Obsolete Vgs(th) (Max) @ Id: 5.55V @ 80mA Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V Current - Continuous Drain (Id) @ 25°C: 200A (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| DF80R12W2H3B11BOMA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 50A 190WVce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Dual Boost Chopper Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Input Capacitance (Cies) @ Vce: 2.35 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 190 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Part Status: Active NTC Thermistor: Yes |
на замовлення 285 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
| FS100R12KT4GPB11BPSA1 | Infineon Technologies |
Description: MOD IGBT LOW PWR ECONO3-4Packaging: Bulk |
на замовлення 38 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
|
DDB6U134N16RRB11BPSA1 | Infineon Technologies |
Description: IGBT MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Single Chopper Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A NTC Thermistor: Yes Supplier Device Package: AG-ECONO2B Part Status: Active Current - Collector (Ic) (Max): 125 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 400 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| FF225R12ME4B11BPSA1 | Infineon Technologies |
Description: FF225R12 - IGBT MODULE |
на замовлення 177 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 4 шт В кошику од. на суму грн. | |||||||||||||||
| F4100R17ME4B11BPSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 155APackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 155 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 9 nF @ 25 V |
на замовлення 68 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||
|
FF225R17ME4PB11BPSA1 | Infineon Technologies |
Description: IGBT MOD 1700V 450A 20MWIGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A Operating Temperature: -40°C ~ 150°C Configuration: Half Bridge Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V Current - Collector Cutoff (Max): 3 mA Power - Max: 20 mW Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 450 A Part Status: Active |
на замовлення 618 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FP75R12KT4PB11BPSA1 | Infineon Technologies |
Description: IGBT MODULE 1200V 150A MODULEInput Capacitance (Cies) @ Vce: 4.3 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 20 mW Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 150 A Part Status: Active IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Operating Temperature: -40°C ~ 150°C Configuration: Three Phase Inverter Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 39 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
F4250R17MP4B11BPSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 370A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 250A NTC Thermistor: No Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 370 A Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 21 nF @ 25 V |
на замовлення 177 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
TC364DP64F300WAAKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 144LQFPPart Status: Active Supplier Device Package: PG-LQFP-144-22 Peripherals: DMA, I2S, PWM, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT Voltage - Supply (Vcc/Vdd): 3.3V, 5V DigiKey Programmable: Not Verified Core Size: 32-Bit Dual-Core Core Processor: TriCore™ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 672K x 8 Program Memory Size: 4MB (4M x 8) Speed: 300MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||||
|
TC364DP64F300WAAKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 144LQFPCore Size: 32-Bit Dual-Core Core Processor: TriCore™ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 672K x 8 Program Memory Size: 4MB (4M x 8) Speed: 300MHz Mounting Type: Surface Mount Package / Case: 144-LQFP Exposed Pad Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Part Status: Active Supplier Device Package: PG-LQFP-144-22 Peripherals: DMA, I2S, PWM, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT Voltage - Supply (Vcc/Vdd): 3.3V, 5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
IMBG120R140M1HXTMA1 | Infineon Technologies |
Description: SICFET N-CH 1.2KV 18A TO263Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +18V, -15V Part Status: Active Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 2.5mA Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 189mOhm @ 6A, 18V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||
|
IMBG120R220M1HXTMA1 | Infineon Technologies |
Description: SICFET N-CH 1.2KV 13A TO263Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +18V, -15V Part Status: Active Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.7V @ 1.6mA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
CY7C1513KV18-250BZXI | Infineon Technologies |
Description: IC SRAM 72MBIT PAR 165FBGAPackage / Case: 165-LBGA Packaging: Tray DigiKey Programmable: Not Verified Memory Organization: 4M x 18 Memory Interface: Parallel Supplier Device Package: 165-FBGA (13x15) Memory Format: SRAM Clock Frequency: 250 MHz Technology: SRAM - Synchronous, QDR II Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 72Mbit Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 1360 шт В кошику од. на суму грн. | ||||||||||||||
|
IKFW40N65ES5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 60A HSIP247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A Supplier Device Package: PG-HSIP247-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/124ns Switching Energy: 560µJ (on), 320µJ (off) Test Condition: 400V, 30A, 13Ohm, 15V Gate Charge: 70 nC Part Status: Active Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 106 W |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IMM101T046MXUMA1 | Infineon Technologies |
Description: IMOTIONPart Status: Active Motor Type - AC, DC: Brushless DC (BLDC) Motor Type - Stepper: Bipolar Supplier Device Package: PG-IQFN-38-1 Technology: Power MOSFET Applications: General Purpose Voltage - Supply: 13.5V ~ 16.5V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 115°C (TJ) Interface: PWM Current - Output: 4A Function: Driver Mounting Type: Surface Mount Package / Case: 38-PowerVQFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
FS150R12KE3GBOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 200A 695WInput Capacitance (Cies) @ Vce: 10.5 nF @ 25 V Current - Collector Cutoff (Max): 5 mA Power - Max: 695 W Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 200 A IGBT Type: Trench Field Stop Supplier Device Package: Module NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A Operating Temperature: -40°C ~ 125°C Configuration: Three Phase Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 8 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
| IPP60R090CFD7 | Infineon Technologies |
Description: POWER FIELD-EFFECT TRANSISTORPart Status: Active Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
IPD380P06NMATMA1 | Infineon Technologies |
Description: MOSFET P-CH 60V 35A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 1.7mA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V |
на замовлення 14252 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
DEMOBOARDIFX81481TOBO1 | Infineon Technologies |
Description: DEMOBOARD IFX81481 |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
|
EVAL2EDL23N06PJTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR 2EDL23N06PJPackaging: Bulk Function: Gate Driver Type: Power Management Utilized IC / Part: 2EDL23N06PJ Supplied Contents: Board(s) Part Status: Active Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BAS40-06E6327 | Infineon Technologies |
Description: DIODE ARR SCHOTT 40V 120MA SOT23Current - Reverse Leakage @ Vr: 1 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Active Operating Temperature - Junction: 150°C Supplier Device Package: PG-SOT23 Current - Average Rectified (Io) (per Diode): 120mA (DC) Diode Configuration: 1 Pair Common Anode Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
BSO613SPVGXUMA1 | Infineon Technologies |
Description: MOSFET P-CH 8-SOICQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-DSO-8-6 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
BSO613SPVGXUMA1 | Infineon Technologies |
Description: MOSFET P-CH 8-SOICQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PG-DSO-8-6 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 17005 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
FS660R08A6P2FBBPSA1 | Infineon Technologies |
Description: IGBT MOD 750V 450A AG-HYBRIDD-1Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A NTC Thermistor: Yes Supplier Device Package: AG-HYBRIDD-1 IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 750 V Power - Max: 1053 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 80 nF @ 50 V |
на замовлення 20 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
IPG20N10S436AATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 100V 20A 8TDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 16µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 55536 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
KITXMCPLT2GOXMC4200TOBO1 | Infineon Technologies |
Description: XMC4200 PLATFORM2GOPackaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M4 Board Type: Evaluation Platform Utilized IC / Part: XMC4200 Platform: XMC4200 Platform2Go Part Status: Active |
на замовлення 18 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
KITXMCPLT2GOXMC4400TOBO1 | Infineon Technologies |
Description: XMC4400 PLATFORM2GOPackaging: Box Mounting Type: Fixed Type: MCU 32-Bit Contents: Board(s) Core Processor: ARM® Cortex®-M4 Utilized IC / Part: XMC4400 Platform: XMC4400 Platform2Go |
на замовлення 7 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
XMC1302T038X0064ABXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 38TSSOPPackaging: Cut Tape (CT) Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-9 Number of I/O: 26 DigiKey Programmable: Not Verified |
на замовлення 7763 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
KITA2GTC387MOTORCTRTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR LE9180D-31QKPackaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: LE9180D-31QK, TC387, TLF35584 Supplied Contents: Board(s) Primary Attributes: Motors (BLDC, PMSM) Secondary Attributes: Graphical User Interface (GUI) Embedded: Yes, MCU, 32-Bit Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. |
| IRL530NSTRRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IRL530NSTRRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 100V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 9A, 10V
Power Dissipation (Max): 3.8W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IPDD60R125CFD7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 27A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 27A HDSOP-10
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1700 шт
В кошику
од. на суму грн.
| IPDD60R125CFD7XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 27A HDSOP-10
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4.5V @ 340µA
Description: MOSFET N-CH 600V 27A HDSOP-10
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 6.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1329 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: PG-HDSOP-10-1
Vgs(th) (Max) @ Id: 4.5V @ 340µA
на замовлення 1688 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 244.87 грн |
| 10+ | 174.02 грн |
| 100+ | 131.16 грн |
| 500+ | 108.96 грн |
| BSS126IXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 6.00 грн |
| BSS126IXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
Description: MOSFET N-CH 600V 21MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.7V @ 8µA
Supplier Device Package: PG-SOT23-3-5
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V
на замовлення 4285 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 28.67 грн |
| 18+ | 16.72 грн |
| 100+ | 10.51 грн |
| 500+ | 7.30 грн |
| 1000+ | 6.48 грн |
| BSS126 H6906 |
![]() |
Виробник: Infineon Technologies
Description: SMALL SIGNAL N-CHANNEL MOSFET
Description: SMALL SIGNAL N-CHANNEL MOSFET
товару немає в наявності
Мінімальне замовлення: 1181 шт
В кошику
од. на суму грн.
| TDA4916GG |
![]() |
на замовлення 667 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 405+ | 49.35 грн |
| BTS5210G |
![]() |
Виробник: Infineon Technologies
Description: BUFFER/INVERTER BASED PERIPHERAL
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-14
Ratio - Input:Output: 1:1
Current - Output (Max): 1.8A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5.5V ~ 40V
Input Type: Non-Inverting
Rds On (Typ): 110mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: BUFFER/INVERTER BASED PERIPHERAL
Part Status: Active
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Supplier Device Package: PG-DSO-14
Ratio - Input:Output: 1:1
Current - Output (Max): 1.8A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 5.5V ~ 40V
Input Type: Non-Inverting
Rds On (Typ): 110mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 150°C (TJ)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| PX8897EDQGR2ER1232AXUMA1 |
Виробник: Infineon Technologies
Description: IC REGULATOR PG-VQFN-48-2
Description: IC REGULATOR PG-VQFN-48-2
товару немає в наявності
В кошику
од. на суму грн.
| PX8897EDQGR2ER1233AXUMA1 |
Виробник: Infineon Technologies
Description: IC REGULATOR PG-VQFN-48-2
Description: IC REGULATOR PG-VQFN-48-2
товару немає в наявності
В кошику
од. на суму грн.
| FF300R12KE4B2HOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 460A 1600W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
Description: IGBT MOD 1200V 460A 1600W MOD
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 460 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1600 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 19 nF @ 25 V
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 7741.07 грн |
| ADM6992X-AD-T-1 |
![]() |
Виробник: Infineon Technologies
Description: IC ETHERNET CONVERTER 128QFP
DigiKey Programmable: Not Verified
Package / Case: 128-BFQFP
Packaging: Tray
Part Status: Obsolete
Supplier Device Package: PG-BFQFP-128
Standards: 10/100 Base-FX/T/TX PHY
Protocol: Ethernet
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 115°C
Function: Switch
Description: IC ETHERNET CONVERTER 128QFP
DigiKey Programmable: Not Verified
Package / Case: 128-BFQFP
Packaging: Tray
Part Status: Obsolete
Supplier Device Package: PG-BFQFP-128
Standards: 10/100 Base-FX/T/TX PHY
Protocol: Ethernet
Voltage - Supply: 3.135V ~ 3.465V
Operating Temperature: 0°C ~ 115°C
Function: Switch
на замовлення 384 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 51+ | 390.86 грн |
| ADM6992KX-AB-T-1-INF |
![]() |
Виробник: Infineon Technologies
Description: NINJA: FIBER TO FAST ETHERNET CO
DigiKey Programmable: Not Verified
Part Status: Active
Packaging: Tray
Description: NINJA: FIBER TO FAST ETHERNET CO
DigiKey Programmable: Not Verified
Part Status: Active
Packaging: Tray
на замовлення 2486 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 55+ | 382.82 грн |
| IRFS7534TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Description: MOSFET N CH 60V 195A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 103.66 грн |
| 1600+ | 98.48 грн |
| IRFS7534TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N CH 60V 195A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Description: MOSFET N CH 60V 195A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: PG-TO263-7
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
на замовлення 2061 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 291.37 грн |
| 10+ | 184.54 грн |
| 100+ | 129.81 грн |
| IRFS7534TRL7PP |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Description: MOSFET N CH 60V 240A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| IRFS7534TRL7PP |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N CH 60V 240A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Description: MOSFET N CH 60V 240A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 9990 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: D2PAK (7-Lead)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| SAF-XC836M-1FRIAB |
![]() |
Виробник: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Core Processor: XC800
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 4KB (4K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Number of I/O: 25
Part Status: Active
Supplier Device Package: PG-TSSOP-28-1
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Connectivity: I2C, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
DigiKey Programmable: Not Verified
Description: XC800 I-FAMILY MICROCONTROLLER ,
Core Processor: XC800
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 512 x 8
Program Memory Size: 4KB (4K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Number of I/O: 25
Part Status: Active
Supplier Device Package: PG-TSSOP-28-1
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Connectivity: I2C, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
DigiKey Programmable: Not Verified
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 189+ | 112.71 грн |
| SAK-XC836MT-2FRAAB |
![]() |
Виробник: Infineon Technologies
Description: XC800 I-FAMILY MICROCONTROLLER ,
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Number of I/O: 25
Part Status: Active
Supplier Device Package: PG-TSSOP-28-1
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Connectivity: I²C, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
DigiKey Programmable: Not Verified
Description: XC800 I-FAMILY MICROCONTROLLER ,
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 512 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 24MHz
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Number of I/O: 25
Part Status: Active
Supplier Device Package: PG-TSSOP-28-1
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Connectivity: I²C, SSC, UART/USART
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 8x10b
Core Processor: XC800
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| 6ED003L06FXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: 6ED003L06 - HALF-BRIDGE BASED MO
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: 6ED003L06 - HALF-BRIDGE BASED MO
Packaging: Bulk
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 620 V
Supplier Device Package: PG-DSO-28-17
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 19812 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 152+ | 130.40 грн |
| 6ED003L06-FXUMA1 |
Виробник: Infineon Technologies
Description: 6ED003L06 - HALF-BRIDGE BASED MO
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 60ns, 26ns
Supplier Device Package: PG-TSSOP-28
High Side Voltage - Max (Bootstrap): 620 V
Input Type: Non-Inverting
Voltage - Supply: 13V ~ 17.5V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Part Status: Active
Current - Peak Output (Source, Sink): 165mA, 375mA
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 6
DigiKey Programmable: Not Verified
Description: 6ED003L06 - HALF-BRIDGE BASED MO
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 60ns, 26ns
Supplier Device Package: PG-TSSOP-28
High Side Voltage - Max (Bootstrap): 620 V
Input Type: Non-Inverting
Voltage - Supply: 13V ~ 17.5V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Part Status: Active
Current - Peak Output (Source, Sink): 165mA, 375mA
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Number of Drivers: 6
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| 111-4204PBF |
Виробник: Infineon Technologies
Description: IC REGULATOR SMD
Description: IC REGULATOR SMD
товару немає в наявності
В кошику
од. на суму грн.
| SIDC73D170E6X1SA2 |
![]() |
Виробник: Infineon Technologies
Description: DIODE GEN PURP 1.7KV 100A WAFER
Description: DIODE GEN PURP 1.7KV 100A WAFER
товару немає в наявності
В кошику
од. на суму грн.
| BBY 56-02W E6127 |
![]() |
Виробник: Infineon Technologies
Description: DIODE TUNING 10V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: SCD-80
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
Description: DIODE TUNING 10V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 12.1pF @ 4V, 1MHz
Capacitance Ratio Condition: C1/C3
Supplier Device Package: SCD-80
Part Status: Discontinued at Digi-Key
Voltage - Peak Reverse (Max): 10 V
Capacitance Ratio: 3.3
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| TLE7183QUXUMB1 |
![]() |
Виробник: Infineon Technologies
Description: DRIVER_IC
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-TQFP-48-8
Technology: Power MOSFET
Voltage - Supply: 5.5V ~ 20V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
Description: DRIVER_IC
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-TQFP-48-8
Technology: Power MOSFET
Voltage - Supply: 5.5V ~ 20V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLE7183QUXUMA8 |
![]() |
Виробник: Infineon Technologies
Description: DRIVER_IC
Voltage - Supply: 5.5V ~ 20V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-TQFP-48-8
Technology: Power MOSFET
Description: DRIVER_IC
Voltage - Supply: 5.5V ~ 20V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-TQFP-48-8
Technology: Power MOSFET
товару немає в наявності
В кошику
од. на суму грн.
| TLE7183QUXUMA6 |
![]() |
Виробник: Infineon Technologies
Description: DRIVER_IC
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-TQFP-48-8
Technology: Power MOSFET
Voltage - Supply: 5.5V ~ 20V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
Description: DRIVER_IC
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-TQFP-48-8
Technology: Power MOSFET
Voltage - Supply: 5.5V ~ 20V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLE7183QUXUMA9 |
![]() |
Виробник: Infineon Technologies
Description: DRIVER_IC
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-TQFP-48-8
Technology: Power MOSFET
Voltage - Supply: 5.5V ~ 20V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
Description: DRIVER_IC
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-TQFP-48-8
Technology: Power MOSFET
Voltage - Supply: 5.5V ~ 20V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLE7183QUXUMA7 |
![]() |
Виробник: Infineon Technologies
Description: DRIVER_IC
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-TQFP-48-8
Technology: Power MOSFET
Voltage - Supply: 5.5V ~ 20V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
Description: DRIVER_IC
Grade: Automotive
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: PG-TQFP-48-8
Technology: Power MOSFET
Voltage - Supply: 5.5V ~ 20V
Output Configuration: Pre-Driver - Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Parallel
Function: Controller - Commutation, Direction Management
Mounting Type: Surface Mount
Package / Case: 48-TQFP Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| FF6MR12W2M1PB11BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 1200V 200A
Part Status: Obsolete
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: MOSFET 2N-CH 1200V 200A
Part Status: Obsolete
Vgs(th) (Max) @ Id: 5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs: 496nC @ 15V
Rds On (Max) @ Id, Vgs: 5.63mOhm @ 200A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 14700pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| DF80R12W2H3B11BOMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 50A 190W
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Dual Boost Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 2.35 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 190 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
NTC Thermistor: Yes
Description: IGBT MODULE 1200V 50A 190W
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 20A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Dual Boost Chopper
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 2.35 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 190 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
NTC Thermistor: Yes
на замовлення 285 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 2874.58 грн |
| FS100R12KT4GPB11BPSA1 |
![]() |
на замовлення 38 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 10806.09 грн |
| DDB6U134N16RRB11BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Part Status: Active
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 400 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 5.1 nF @ 25 V
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 4696.87 грн |
| FF225R12ME4B11BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: FF225R12 - IGBT MODULE
Description: FF225R12 - IGBT MODULE
на замовлення 177 шт:
термін постачання 21-31 дні (днів)
| F4100R17ME4B11BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 155A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
Description: IGBT MODULE 1700V 155A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 155 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
на замовлення 68 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 6868.52 грн |
| FF225R17ME4PB11BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 450A 20MW
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
Operating Temperature: -40°C ~ 150°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
Description: IGBT MOD 1700V 450A 20MW
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 225A
Operating Temperature: -40°C ~ 150°C
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Current - Collector Cutoff (Max): 3 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 450 A
Part Status: Active
на замовлення 618 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 8081.51 грн |
| FP75R12KT4PB11BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 150A MODULE
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: IGBT MODULE 1200V 150A MODULE
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 150 A
Part Status: Active
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 7228.86 грн |
| F4250R17MP4B11BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 370A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 250A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
Description: IGBT MODULE 1700V 370A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 250A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
на замовлення 177 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 13550.81 грн |
| TC364DP64F300WAAKXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 144LQFP
Part Status: Active
Supplier Device Package: PG-LQFP-144-22
Peripherals: DMA, I2S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
DigiKey Programmable: Not Verified
Core Size: 32-Bit Dual-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 672K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 4MB FLASH 144LQFP
Part Status: Active
Supplier Device Package: PG-LQFP-144-22
Peripherals: DMA, I2S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
DigiKey Programmable: Not Verified
Core Size: 32-Bit Dual-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 672K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| TC364DP64F300WAAKXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 144LQFP
Core Size: 32-Bit Dual-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 672K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: PG-LQFP-144-22
Peripherals: DMA, I2S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Description: IC MCU 32BIT 4MB FLASH 144LQFP
Core Size: 32-Bit Dual-Core
Core Processor: TriCore™
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 672K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 300MHz
Mounting Type: Surface Mount
Package / Case: 144-LQFP Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: PG-LQFP-144-22
Peripherals: DMA, I2S, PWM, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, I2C, LINbus, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
товару немає в наявності
В кошику
од. на суму грн.
| IMBG120R140M1HXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 18A TO263
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 189mOhm @ 6A, 18V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SICFET N-CH 1.2KV 18A TO263
Input Capacitance (Ciss) (Max) @ Vds: 491 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 2.5mA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 189mOhm @ 6A, 18V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IMBG120R220M1HXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 13A TO263
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SICFET N-CH 1.2KV 13A TO263
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +18V, -15V
Part Status: Active
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.7V @ 1.6mA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 294mOhm @ 4A, 18V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 180.31 грн |
| CY7C1513KV18-250BZXI |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
Description: IC SRAM 72MBIT PAR 165FBGA
Package / Case: 165-LBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 4M x 18
Memory Interface: Parallel
Supplier Device Package: 165-FBGA (13x15)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, QDR II
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 72Mbit
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 1360 шт
В кошику
од. на суму грн.
| IKFW40N65ES5XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 60A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
Description: IGBT TRENCH FS 650V 60A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 692.77 грн |
| IMM101T046MXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IMOTION
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Bipolar
Supplier Device Package: PG-IQFN-38-1
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 115°C (TJ)
Interface: PWM
Current - Output: 4A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 38-PowerVQFN
Packaging: Cut Tape (CT)
Description: IMOTION
Part Status: Active
Motor Type - AC, DC: Brushless DC (BLDC)
Motor Type - Stepper: Bipolar
Supplier Device Package: PG-IQFN-38-1
Technology: Power MOSFET
Applications: General Purpose
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 115°C (TJ)
Interface: PWM
Current - Output: 4A
Function: Driver
Mounting Type: Surface Mount
Package / Case: 38-PowerVQFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| FS150R12KE3GBOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 200A 695W
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 695 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: IGBT MOD 1200V 200A 695W
Input Capacitance (Cies) @ Vce: 10.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 695 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 200 A
IGBT Type: Trench Field Stop
Supplier Device Package: Module
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 150A
Operating Temperature: -40°C ~ 125°C
Configuration: Three Phase Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 23345.64 грн |
| IPP60R090CFD7 |
![]() |
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR
Part Status: Active
Packaging: Bulk
Description: POWER FIELD-EFFECT TRANSISTOR
Part Status: Active
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| IPD380P06NMATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 60V 35A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
Description: MOSFET P-CH 60V 35A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
на замовлення 14252 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 203.03 грн |
| 10+ | 125.59 грн |
| 100+ | 85.80 грн |
| 500+ | 64.53 грн |
| 1000+ | 59.39 грн |
| DEMOBOARDIFX81481TOBO1 |
![]() |
Виробник: Infineon Technologies
Description: DEMOBOARD IFX81481
Description: DEMOBOARD IFX81481
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| EVAL2EDL23N06PJTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 2EDL23N06PJ
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2EDL23N06PJ
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
Description: EVAL BOARD FOR 2EDL23N06PJ
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Utilized IC / Part: 2EDL23N06PJ
Supplied Contents: Board(s)
Part Status: Active
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5988.49 грн |
| BAS40-06E6327 |
![]() |
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: DIODE ARR SCHOTT 40V 120MA SOT23
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Active
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Diode Configuration: 1 Pair Common Anode
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| BSO613SPVGXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 8-SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-DSO-8-6
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 8-SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-DSO-8-6
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 24.71 грн |
| BSO613SPVGXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 8-SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-DSO-8-6
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 8-SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-DSO-8-6
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.44A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.44A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 17005 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 103.84 грн |
| 10+ | 63.05 грн |
| 100+ | 34.97 грн |
| 500+ | 29.17 грн |
| 1000+ | 28.27 грн |
| FS660R08A6P2FBBPSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 750V 450A AG-HYBRIDD-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1053 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
Description: IGBT MOD 750V 450A AG-HYBRIDD-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: AG-HYBRIDD-1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1053 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 80 nF @ 50 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 20321.95 грн |
| IPG20N10S436AATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 20A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 43W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Input Capacitance (Ciss) (Max) @ Vds: 990pF @ 25V
Rds On (Max) @ Id, Vgs: 36mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 16µA
Supplier Device Package: PG-TDSON-8-10
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 55536 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 139.48 грн |
| 10+ | 85.89 грн |
| 100+ | 57.97 грн |
| 500+ | 43.19 грн |
| 1000+ | 39.58 грн |
| 2000+ | 37.82 грн |
| KITXMCPLT2GOXMC4200TOBO1 |
![]() |
Виробник: Infineon Technologies
Description: XMC4200 PLATFORM2GO
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4200
Platform: XMC4200 Platform2Go
Part Status: Active
Description: XMC4200 PLATFORM2GO
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Board Type: Evaluation Platform
Utilized IC / Part: XMC4200
Platform: XMC4200 Platform2Go
Part Status: Active
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4358.08 грн |
| KITXMCPLT2GOXMC4400TOBO1 |
![]() |
Виробник: Infineon Technologies
Description: XMC4400 PLATFORM2GO
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4400
Platform: XMC4400 Platform2Go
Description: XMC4400 PLATFORM2GO
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4400
Platform: XMC4400 Platform2Go
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4652.55 грн |
| XMC1302T038X0064ABXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 38TSSOP
Packaging: Cut Tape (CT)
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Number of I/O: 26
DigiKey Programmable: Not Verified
на замовлення 7763 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 175.13 грн |
| 10+ | 125.51 грн |
| 25+ | 114.80 грн |
| 100+ | 96.63 грн |
| 250+ | 91.33 грн |
| 500+ | 88.15 грн |
| 1000+ | 84.12 грн |
| KITA2GTC387MOTORCTRTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR LE9180D-31QK
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: LE9180D-31QK, TC387, TLF35584
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC, PMSM)
Secondary Attributes: Graphical User Interface (GUI)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
Description: EVAL BOARD FOR LE9180D-31QK
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: LE9180D-31QK, TC387, TLF35584
Supplied Contents: Board(s)
Primary Attributes: Motors (BLDC, PMSM)
Secondary Attributes: Graphical User Interface (GUI)
Embedded: Yes, MCU, 32-Bit
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.





































