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BSC070N10NS5SCATMA1 BSC070N10NS5SCATMA1 Infineon Technologies Infineon-BSC070N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7de4910086 Description: MOSFET N-CH 100V 14A/82A 8SWSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
на замовлення 11834 шт:
термін постачання 21-31 дні (днів)
2+183.83 грн
10+129.89 грн
100+94.15 грн
500+74.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC070N10LS5ATMA1 BSC070N10LS5ATMA1 Infineon Technologies Infineon-BSC070N10LS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626bb628d7016bdc41b1c2214d Description: MOSFET N-CH 100V 14A/79A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
BSC070N10LS5ATMA1 BSC070N10LS5ATMA1 Infineon Technologies Infineon-BSC070N10LS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626bb628d7016bdc41b1c2214d Description: MOSFET N-CH 100V 14A/79A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
на замовлення 3992 шт:
термін постачання 21-31 дні (днів)
3+134.49 грн
10+99.09 грн
25+89.45 грн
100+72.57 грн
250+66.42 грн
500+62.40 грн
1000+57.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BBY5502VH6327XTSA1 BBY5502VH6327XTSA1 Infineon Technologies INFNS15716-1.pdf?t.download=true&u=5oefqw Description: DIODE VARACTOR 16V SGL SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 3.0
на замовлення 16820 шт:
термін постачання 21-31 дні (днів)
13+24.67 грн
21+15.10 грн
100+14.50 грн
500+12.90 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
IPD90N06S407ATMA2 IPD90N06S407ATMA2 Infineon Technologies Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87 Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 47500 шт:
термін постачання 21-31 дні (днів)
2500+37.52 грн
5000+33.98 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD90N06S407ATMA2 IPD90N06S407ATMA2 Infineon Technologies Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87 Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 51853 шт:
термін постачання 21-31 дні (днів)
3+134.49 грн
10+82.53 грн
100+55.49 грн
500+41.20 грн
1000+37.70 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD90N06S4L-05 Infineon Technologies INFNS14111-1.pdf?t.download=true&u=5oefqw Description: IPD90N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
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IPI90N06S4L04AKSA2 IPI90N06S4L04AKSA2 Infineon Technologies Infineon-I90N06S4L_04-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d111570ce3 Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
на замовлення 32222 шт:
термін постачання 21-31 дні (днів)
208+110.71 грн
Мінімальне замовлення: 208
В кошику  од. на суму  грн.
IPW60R125P6 Infineon Technologies INFNS30506-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
товару немає в наявності
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IPP60R125C6 IPP60R125C6 Infineon Technologies INFN-S-A0004583435-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
товару немає в наявності
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SP000685844 SP000685844 Infineon Technologies INFN-S-A0004583435-1.pdf?t.download=true&u=5oefqw Description: IPP60R125C6XKSA1 - COOLMOS N-CHA
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IPI60R125CP IPI60R125CP Infineon Technologies INFNS16994-1.pdf?t.download=true&u=5oefqw Description: 25A, 600V, 0.125OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
товару немає в наявності
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IPA60R125CP IPA60R125CP Infineon Technologies INFNS15802-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
товару немає в наявності
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IPP60R125CP IPP60R125CP Infineon Technologies INFNS15863-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 2
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IPW60R125CP IPW60R125CP Infineon Technologies INFNS16489-1.pdf?t.download=true&u=5oefqw Description: 25A, 600V, 0.125OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
товару немає в наявності
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IPP60R190C6 IPP60R190C6 Infineon Technologies INFN-S-A0004583470-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 2
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SP000660618 SP000660618 Infineon Technologies Infineon-IPI60R190C6-DS-v02_02-EN.pdf?fileId=db3a30432239cccd0122650f87c6114d Description: IPI60R190C6XKSA1 - COOLMOS N-CHA
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
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SP000797380 SP000797380 Infineon Technologies INFN-S-A0003614948-1.pdf?t.download=true&u=5oefqw Description: IPA60R190E6XKSA1 - POWER FIELD-E
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
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IPW60R190P6 IPW60R190P6 Infineon Technologies INFN-S-A0001301528-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 20.2A TO247
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IPW60R190E6 IPW60R190E6 Infineon Technologies Infineon-IPW60R190E6-DS-v02_04-EN.pdf?fileId=db3a3043284aacd801286cadc33a2932 Description: 600V, 0.19OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
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TLE4251D TLE4251D Infineon Technologies Infineon-TLE4251-DS-v02_90-EN.pdf?fileId=5546d46259d9a4bf0159f918181239ff Description: TLE4251 - LINEAR VOLTAGE REGULAT
Packaging: Bulk
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Max): 40V
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 20 mA
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IKW15T120 IKW15T120 Infineon Technologies INFNS27300-1.pdf?t.download=true&u=5oefqw description Description: IKW15T120 - DISCRETE IGBT WITH A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 50ns/520ns
Switching Energy: 1.3mJ (on), 1.4mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
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IPI100N10S305AKSA1 IPI100N10S305AKSA1 Infineon Technologies Infineon-IPP_B_I100N10S3-DS-v01_00-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908bd4d8595c&ack=t Description: MOSFET N-CH 100V 100A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
на замовлення 19500 шт:
термін постачання 21-31 дні (днів)
160+142.40 грн
Мінімальне замовлення: 160
В кошику  од. на суму  грн.
IKU10N60RXK IKU10N60RXK Infineon Technologies INFNS16819-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: PG-TO-251-3-341
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/192ns
Switching Energy: 210µJ (on), 380µJ (off)
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
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IKD10N60RF IKD10N60RF Infineon Technologies INFN-S-A0004163151-1.pdf?t.download=true&u=5oefqw Description: IKD10N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/168ns
Switching Energy: 190µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 26Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
товару немає в наявності
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BAS40-04E6327 BAS40-04E6327 Infineon Technologies INFNS11688-1.pdf?t.download=true&u=5oefqw Description: BAS40 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
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TLS115D0EJXUMA1 TLS115D0EJXUMA1 Infineon Technologies Infineon-TLS115D0EJ-DataSheet-v01_11-EN.pdf?fileId=5546d46279cccfdb0179ce5faaf26d95 Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Max): 14V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable, Power Good
Part Status: Active
PSRR: 85dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 14 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+67.10 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLS115D0EJXUMA1 TLS115D0EJXUMA1 Infineon Technologies Infineon-TLS115D0EJ-DataSheet-v01_11-EN.pdf?fileId=5546d46279cccfdb0179ce5faaf26d95 Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Max): 14V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable, Power Good
Part Status: Active
PSRR: 85dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 14 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5430 шт:
термін постачання 21-31 дні (днів)
3+133.70 грн
10+94.34 грн
25+85.77 грн
100+71.67 грн
250+67.46 грн
500+64.93 грн
1000+61.81 грн
Мінімальне замовлення: 3
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IPI80P03P4-05AKSA1 Infineon Technologies Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
на замовлення 2596 шт:
термін постачання 21-31 дні (днів)
378+62.87 грн
Мінімальне замовлення: 378
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IPB80P03P4-05ATMA1 IPB80P03P4-05ATMA1 Infineon Technologies INFNS13097-1.pdf?t.download=true&u=5oefqw Description: P-CHANNEL POWER MOSFET
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IPDD60R150G7XTMA1 IPDD60R150G7XTMA1 Infineon Technologies Infineon-IPDD60R150G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170806aa57863 Description: MOSFET N-CH 600V 16A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
на замовлення 1680 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPDD60R150G7XTMA1 IPDD60R150G7XTMA1 Infineon Technologies Infineon-IPDD60R150G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170806aa57863 Description: MOSFET N-CH 600V 16A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
на замовлення 1680 шт:
термін постачання 21-31 дні (днів)
2+302.41 грн
10+191.66 грн
100+134.93 грн
500+103.91 грн
Мінімальне замовлення: 2
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PTFA181001EV4XWSA1 PTFA181001EV4XWSA1 Infineon Technologies PTFA181001%28E%2CF%29.pdf Description: RF MOSFET LDMOS 28V H-36248-2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.88GHz
Power - Output: 100W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-36248-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 750 mA
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PTFA181001EV4R250XTMA1 PTFA181001EV4R250XTMA1 Infineon Technologies PTFA181001%28E%2CF%29.pdf Description: RF MOSFET LDMOS 28V H-36248-2
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.88GHz
Power - Output: 100W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-36248-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 750 mA
товару немає в наявності
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IRFR1010ZTRPBF IRFR1010ZTRPBF Infineon Technologies irfr1010zpbf.pdf?fileId=5546d462533600a40153562d001f203f Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
товару немає в наявності
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IRFR1010ZTRPBF IRFR1010ZTRPBF Infineon Technologies irfr1010zpbf.pdf?fileId=5546d462533600a40153562d001f203f Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
2+159.96 грн
10+98.70 грн
Мінімальне замовлення: 2
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TC1337A136F150EBAAKXUMA2 Infineon Technologies Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2533 шт:
термін постачання 21-31 дні (днів)
52+437.80 грн
Мінімальне замовлення: 52
В кошику  од. на суму  грн.
SAK-TC1367A-264F150EBAA Infineon Technologies Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 322 шт:
термін постачання 21-31 дні (днів)
30+741.93 грн
Мінімальне замовлення: 30
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TLF50281ELXUMA2 TLF50281ELXUMA2 Infineon Technologies Description: TLF50281 - SWITCHING REGULATOR,
Packaging: Bulk
Part Status: Active
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TLF50281EL TLF50281EL Infineon Technologies INFN-S-A0004583611-1.pdf?t.download=true&u=5oefqw Description: TLF50281 - OPTIREG SWITCHERS (AU
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-1
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
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IGB30N60T IGB30N60T Infineon Technologies INFN-S-A0001299339-1.pdf?t.download=true&u=5oefqw Description: IGB30N60 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
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IGP30N60H3 IGP30N60H3 Infineon Technologies INFNS30178-1.pdf?t.download=true&u=5oefqw Description: IGP30N60 - DISCRETE IGBT WITHOUT
товару немає в наявності
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SGW30N60FKSA1 SGW30N60FKSA1 Infineon Technologies SGx30N60.pdf Description: IGBT NPT 600V 41A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/291ns
Switching Energy: 1.29mJ
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 140 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
на замовлення 117 шт:
термін постачання 21-31 дні (днів)
81+259.58 грн
Мінімальне замовлення: 81
В кошику  од. на суму  грн.
SS07N70AKMA1 Infineon Technologies Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)
520+40.58 грн
Мінімальне замовлення: 520
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SS07N70AKMA1046 SS07N70AKMA1046 Infineon Technologies Description: SS07N70 - 650V AND 700V COOLMOS
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
634+35.40 грн
Мінімальне замовлення: 634
В кошику  од. на суму  грн.
BTS134DNT BTS134DNT Infineon Technologies Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
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XMC1402Q048X0128AAXUMA1 XMC1402Q048X0128AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+121.23 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
XMC1402Q048X0128AAXUMA1 XMC1402Q048X0128AAXUMA1 Infineon Technologies Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2 Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
на замовлення 3502 шт:
термін постачання 21-31 дні (днів)
2+228.40 грн
10+164.53 грн
25+150.81 грн
100+127.33 грн
250+120.55 грн
500+116.46 грн
1000+111.25 грн
Мінімальне замовлення: 2
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EVAL2K5WCCM4PV3TOBO1 EVAL2K5WCCM4PV3TOBO1 Infineon Technologies EVAL_2.5KW_CCM_4PIN_EB.pdf Description: EVAL BOARD PFC CCM 2500W
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
1+48775.97 грн
В кошику  од. на суму  грн.
IR2128PBF IR2128PBF Infineon Technologies ir2127.pdf?fileId=5546d462533600a4015355c868861696 Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
48+143.88 грн
Мінімальне замовлення: 48
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IAUC28N08S5L230ATMA1 IAUC28N08S5L230ATMA1 Infineon Technologies Infineon-IAUC28N08S5L230-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1dd9c8340050 Description: MOSFET N-CH 80V 28A 8TDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 14A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 40 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+23.00 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IAUC28N08S5L230ATMA1 IAUC28N08S5L230ATMA1 Infineon Technologies Infineon-IAUC28N08S5L230-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1dd9c8340050 Description: MOSFET N-CH 80V 28A 8TDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 14A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 40 V
Qualification: AEC-Q101
на замовлення 9526 шт:
термін постачання 21-31 дні (днів)
4+97.88 грн
10+59.16 грн
100+39.08 грн
500+28.59 грн
1000+25.99 грн
2000+23.81 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IKD15N60RF IKD15N60RF Infineon Technologies INFN-S-A0004163154-1.pdf?t.download=true&u=5oefqw Description: IKD15N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
товару немає в наявності
В кошику  од. на суму  грн.
IKB15N60T Infineon Technologies INFN-S-A0001300113-1.pdf?t.download=true&u=5oefqw Description: IKB15N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 220µJ (on), 350µj (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
товару немає в наявності
В кошику  од. на суму  грн.
IRFR9120NTRLPBF IRFR9120NTRLPBF Infineon Technologies irfr9120npbf.pdf?fileId=5546d462533600a40153563607932138 Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+32.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFR9120NTRLPBF IRFR9120NTRLPBF Infineon Technologies irfr9120npbf.pdf?fileId=5546d462533600a40153563607932138 Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 4879 шт:
термін постачання 21-31 дні (днів)
7+49.34 грн
10+46.90 грн
100+38.59 грн
500+31.27 грн
1000+29.88 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SLS32AIA020X4USON10XTMA4 SLS32AIA020X4USON10XTMA4 Infineon Technologies Infineon-OPTIGA%20TRUST%20X%20SLS%2032AIA-DS-v02_60-EN.pdf?fileId=5546d462602a9dc801606f1c2ebb7fe9 Description: OPTIGA TRUST
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Program Memory Type: NVM (10kB)
Applications: Embedded Security Trusted Computing
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IGP20N60H3 IGP20N60H3 Infineon Technologies INFNS30175-1.pdf?t.download=true&u=5oefqw Description: IGP20N60 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 450µJ (on), 240µJ (off)
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
товару немає в наявності
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AUIPS7145RTRL AUIPS7145RTRL Infineon Technologies auips7145r.pdf?fileId=5546d462533600a4015355a7ff1a1334 Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
товару немає в наявності
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ESD106B1W0201E6327XTSA1 ESD106B1W0201E6327XTSA1 Infineon Technologies Infineon-ESD106-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb48375972ca5 Description: TVS DIODE 5.5VWM 10VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 15W
Power Line Protection: No
Part Status: Active
на замовлення 17787 шт:
термін постачання 21-31 дні (днів)
29+11.14 грн
46+6.74 грн
106+2.90 грн
500+2.59 грн
1000+2.45 грн
2000+2.42 грн
5000+2.35 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
BSC070N10NS5SCATMA1 Infineon-BSC070N10NS5SC-DataSheet-v02_00-EN.pdf?fileId=5546d462712ef9b701712f7de4910086
BSC070N10NS5SCATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 14A/82A 8SWSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
на замовлення 11834 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+183.83 грн
10+129.89 грн
100+94.15 грн
500+74.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BSC070N10LS5ATMA1 Infineon-BSC070N10LS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626bb628d7016bdc41b1c2214d
BSC070N10LS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 14A/79A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
товару немає в наявності
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BSC070N10LS5ATMA1 Infineon-BSC070N10LS5-DataSheet-v02_00-EN.pdf?fileId=5546d4626bb628d7016bdc41b1c2214d
BSC070N10LS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 14A/79A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 49µA
Supplier Device Package: PG-TDSON-8-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
на замовлення 3992 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+134.49 грн
10+99.09 грн
25+89.45 грн
100+72.57 грн
250+66.42 грн
500+62.40 грн
1000+57.90 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
BBY5502VH6327XTSA1 INFNS15716-1.pdf?t.download=true&u=5oefqw
BBY5502VH6327XTSA1
Виробник: Infineon Technologies
Description: DIODE VARACTOR 16V SGL SC79-2
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 6.5pF @ 10V, 1MHz
Capacitance Ratio Condition: C2/C10
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 3.0
на замовлення 16820 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+24.67 грн
21+15.10 грн
100+14.50 грн
500+12.90 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
IPD90N06S407ATMA2 Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87
IPD90N06S407ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 47500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+37.52 грн
5000+33.98 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
IPD90N06S407ATMA2 Infineon-IPD90N06S4_07-DS-v01_00-en.pdf?fileId=db3a30431ff988150120386e3b5b0c87
IPD90N06S407ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 90A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 40µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 51853 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+134.49 грн
10+82.53 грн
100+55.49 грн
500+41.20 грн
1000+37.70 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPD90N06S4L-05 INFNS14111-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IPD90N06 - 55V-60V N-CHANNEL AUT
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 90A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 60µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8180 pF @ 25 V
товару немає в наявності
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IPI90N06S4L04AKSA2 Infineon-I90N06S4L_04-DS-v01_00-en.pdf?fileId=db3a30431ff98815012038d111570ce3
IPI90N06S4L04AKSA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 90A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 90µA
Supplier Device Package: PG-TO262-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 25 V
на замовлення 32222 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
208+110.71 грн
Мінімальне замовлення: 208
В кошику  од. на суму  грн.
IPW60R125P6 INFNS30506-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11.6A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 960µA
Supplier Device Package: PG-TO247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 100 V
товару немає в наявності
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IPP60R125C6 INFN-S-A0004583435-1.pdf?t.download=true&u=5oefqw
IPP60R125C6
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 960µA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2127 pF @ 100 V
товару немає в наявності
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SP000685844 INFN-S-A0004583435-1.pdf?t.download=true&u=5oefqw
SP000685844
Виробник: Infineon Technologies
Description: IPP60R125C6XKSA1 - COOLMOS N-CHA
товару немає в наявності
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IPI60R125CP INFNS16994-1.pdf?t.download=true&u=5oefqw
IPI60R125CP
Виробник: Infineon Technologies
Description: 25A, 600V, 0.125OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
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IPA60R125CP INFNS15802-1.pdf?t.download=true&u=5oefqw
IPA60R125CP
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
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IPP60R125CP INFNS15863-1.pdf?t.download=true&u=5oefqw
IPP60R125CP
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 2
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IPW60R125CP INFNS16489-1.pdf?t.download=true&u=5oefqw
IPW60R125CP
Виробник: Infineon Technologies
Description: 25A, 600V, 0.125OHM, N-CHANNEL M
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
Supplier Device Package: PG-TO247-3-21
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V
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IPP60R190C6 INFN-S-A0004583470-1.pdf?t.download=true&u=5oefqw
IPP60R190C6
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 2
товару немає в наявності
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SP000660618 Infineon-IPI60R190C6-DS-v02_02-EN.pdf?fileId=db3a30432239cccd0122650f87c6114d
SP000660618
Виробник: Infineon Technologies
Description: IPI60R190C6XKSA1 - COOLMOS N-CHA
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO262-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
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SP000797380 INFN-S-A0003614948-1.pdf?t.download=true&u=5oefqw
SP000797380
Виробник: Infineon Technologies
Description: IPA60R190E6XKSA1 - POWER FIELD-E
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
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IPW60R190P6 INFN-S-A0001301528-1.pdf?t.download=true&u=5oefqw
IPW60R190P6
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 20.2A TO247
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IPW60R190E6 Infineon-IPW60R190E6-DS-v02_04-EN.pdf?fileId=db3a3043284aacd801286cadc33a2932
IPW60R190E6
Виробник: Infineon Technologies
Description: 600V, 0.19OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO247-3-41
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
товару немає в наявності
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TLE4251D Infineon-TLE4251-DS-v02_90-EN.pdf?fileId=5546d46259d9a4bf0159f918181239ff
TLE4251D
Виробник: Infineon Technologies
Description: TLE4251 - LINEAR VOLTAGE REGULAT
Packaging: Bulk
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 300 µA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: PG-TO252-5-11
Voltage - Output (Max): 40V
Voltage - Output (Min/Fixed): Tracking
Control Features: Enable
Part Status: Active
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.52V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 20 mA
товару немає в наявності
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IKW15T120 description INFNS27300-1.pdf?t.download=true&u=5oefqw
IKW15T120
Виробник: Infineon Technologies
Description: IKW15T120 - DISCRETE IGBT WITH A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 140 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: PG-TO247-3-21
IGBT Type: NPT, Trench Field Stop
Td (on/off) @ 25°C: 50ns/520ns
Switching Energy: 1.3mJ (on), 1.4mJ (off)
Test Condition: 600V, 15A, 56Ohm, 15V
Gate Charge: 85 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
товару немає в наявності
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IPI100N10S305AKSA1 Infineon-IPP_B_I100N10S3-DS-v01_00-en.pdf?folderId=db3a3043156fd5730115c7d50620107c&fileId=db3a30431a5c32f2011a908bd4d8595c&ack=t
IPI100N10S305AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 100A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 176 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
на замовлення 19500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
160+142.40 грн
Мінімальне замовлення: 160
В кошику  од. на суму  грн.
IKU10N60RXK INFNS16819-1.pdf?t.download=true&u=5oefqw
IKU10N60RXK
Виробник: Infineon Technologies
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: PG-TO-251-3-341
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 14ns/192ns
Switching Energy: 210µJ (on), 380µJ (off)
Test Condition: 400V, 10A, 23Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
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IKD10N60RF INFN-S-A0004163151-1.pdf?t.download=true&u=5oefqw
IKD10N60RF
Виробник: Infineon Technologies
Description: IKD10N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 72 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/168ns
Switching Energy: 190µJ (on), 160µJ (off)
Test Condition: 400V, 10A, 26Ohm, 15V
Gate Charge: 64 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 150 W
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BAS40-04E6327 INFNS11688-1.pdf?t.download=true&u=5oefqw
BAS40-04E6327
Виробник: Infineon Technologies
Description: BAS40 - HIGH SPEED SWITCHING, CL
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT23-3-11
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
товару немає в наявності
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TLS115D0EJXUMA1 Infineon-TLS115D0EJ-DataSheet-v01_11-EN.pdf?fileId=5546d46279cccfdb0179ce5faaf26d95
TLS115D0EJXUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Max): 14V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable, Power Good
Part Status: Active
PSRR: 85dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 14 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+67.10 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TLS115D0EJXUMA1 Infineon-TLS115D0EJ-DataSheet-v01_11-EN.pdf?fileId=5546d46279cccfdb0179ce5faaf26d95
TLS115D0EJXUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR POS ADJ 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 90 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-8
Voltage - Output (Max): 14V
Voltage - Output (Min/Fixed): 2V
Control Features: Enable, Power Good
Part Status: Active
PSRR: 85dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 14 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5430 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+133.70 грн
10+94.34 грн
25+85.77 грн
100+71.67 грн
250+67.46 грн
500+64.93 грн
1000+61.81 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IPI80P03P4-05AKSA1
Виробник: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 4V @ 253µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 25 V
на замовлення 2596 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
378+62.87 грн
Мінімальне замовлення: 378
В кошику  од. на суму  грн.
IPB80P03P4-05ATMA1 INFNS13097-1.pdf?t.download=true&u=5oefqw
IPB80P03P4-05ATMA1
Виробник: Infineon Technologies
Description: P-CHANNEL POWER MOSFET
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IPDD60R150G7XTMA1 Infineon-IPDD60R150G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170806aa57863
IPDD60R150G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 16A HDSOP-10
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
на замовлення 1680 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
IPDD60R150G7XTMA1 Infineon-IPDD60R150G7-DS-v02_00-EN.pdf?fileId=5546d4626102d35a016170806aa57863
IPDD60R150G7XTMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 16A HDSOP-10
Packaging: Cut Tape (CT)
Package / Case: 10-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 5.3A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 260µA
Supplier Device Package: PG-HDSOP-10-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 902 pF @ 400 V
на замовлення 1680 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+302.41 грн
10+191.66 грн
100+134.93 грн
500+103.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PTFA181001EV4XWSA1 PTFA181001%28E%2CF%29.pdf
PTFA181001EV4XWSA1
Виробник: Infineon Technologies
Description: RF MOSFET LDMOS 28V H-36248-2
Packaging: Tray
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.88GHz
Power - Output: 100W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-36248-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 750 mA
товару немає в наявності
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PTFA181001EV4R250XTMA1 PTFA181001%28E%2CF%29.pdf
PTFA181001EV4R250XTMA1
Виробник: Infineon Technologies
Description: RF MOSFET LDMOS 28V H-36248-2
Packaging: Tape & Reel (TR)
Package / Case: 2-Flatpack, Fin Leads
Current Rating (Amps): 1µA
Mounting Type: Surface Mount
Frequency: 1.88GHz
Power - Output: 100W
Gain: 16.5dB
Technology: LDMOS
Supplier Device Package: H-36248-2
Voltage - Rated: 65 V
Voltage - Test: 28 V
Current - Test: 750 mA
товару немає в наявності
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IRFR1010ZTRPBF irfr1010zpbf.pdf?fileId=5546d462533600a40153562d001f203f
IRFR1010ZTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
товару немає в наявності
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IRFR1010ZTRPBF irfr1010zpbf.pdf?fileId=5546d462533600a40153562d001f203f
IRFR1010ZTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+159.96 грн
10+98.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TC1337A136F150EBAAKXUMA2
Виробник: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2533 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
52+437.80 грн
Мінімальне замовлення: 52
В кошику  од. на суму  грн.
SAK-TC1367A-264F150EBAA
Виробник: Infineon Technologies
Description: 32-BIT RISC FLASH MCU
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 322 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
30+741.93 грн
Мінімальне замовлення: 30
В кошику  од. на суму  грн.
TLF50281ELXUMA2
TLF50281ELXUMA2
Виробник: Infineon Technologies
Description: TLF50281 - SWITCHING REGULATOR,
Packaging: Bulk
Part Status: Active
товару немає в наявності
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TLF50281EL INFN-S-A0004583611-1.pdf?t.download=true&u=5oefqw
TLF50281EL
Виробник: Infineon Technologies
Description: TLF50281 - OPTIREG SWITCHERS (AU
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.2MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-1
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
товару немає в наявності
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IGB30N60T INFN-S-A0001299339-1.pdf?t.download=true&u=5oefqw
IGB30N60T
Виробник: Infineon Technologies
Description: IGB30N60 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
товару немає в наявності
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IGP30N60H3 INFNS30178-1.pdf?t.download=true&u=5oefqw
IGP30N60H3
Виробник: Infineon Technologies
Description: IGP30N60 - DISCRETE IGBT WITHOUT
товару немає в наявності
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SGW30N60FKSA1 SGx30N60.pdf
SGW30N60FKSA1
Виробник: Infineon Technologies
Description: IGBT NPT 600V 41A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 44ns/291ns
Switching Energy: 1.29mJ
Test Condition: 400V, 30A, 11Ohm, 15V
Gate Charge: 140 nC
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 112 A
Power - Max: 250 W
на замовлення 117 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
81+259.58 грн
Мінімальне замовлення: 81
В кошику  од. на суму  грн.
SS07N70AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH
Packaging: Bulk
Part Status: Obsolete
на замовлення 42000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
520+40.58 грн
Мінімальне замовлення: 520
В кошику  од. на суму  грн.
SS07N70AKMA1046
SS07N70AKMA1046
Виробник: Infineon Technologies
Description: SS07N70 - 650V AND 700V COOLMOS
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
634+35.40 грн
Мінімальне замовлення: 634
В кошику  од. на суму  грн.
BTS134DNT
BTS134DNT
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 TO252-3
Packaging: Tape & Reel (TR)
Features: Auto Restart
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 35mOhm
Input Type: Non-Inverting
Voltage - Load: 42V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-3-11
Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
Part Status: Obsolete
товару немає в наявності
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XMC1402Q048X0128AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402Q048X0128AAXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+121.23 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
XMC1402Q048X0128AAXUMA1 Infineon-XMC1400-DS-v01_03-EN.pdf?fileId=5546d46250cc1fdf015110a2596343b2
XMC1402Q048X0128AAXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-73
Part Status: Active
Number of I/O: 34
DigiKey Programmable: Not Verified
на замовлення 3502 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+228.40 грн
10+164.53 грн
25+150.81 грн
100+127.33 грн
250+120.55 грн
500+116.46 грн
1000+111.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
EVAL2K5WCCM4PV3TOBO1 EVAL_2.5KW_CCM_4PIN_EB.pdf
EVAL2K5WCCM4PV3TOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD PFC CCM 2500W
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+48775.97 грн
В кошику  од. на суму  грн.
IR2128PBF ir2127.pdf?fileId=5546d462533600a4015355c868861696
IR2128PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side or Low-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 48 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
48+143.88 грн
Мінімальне замовлення: 48
В кошику  од. на суму  грн.
IAUC28N08S5L230ATMA1 Infineon-IAUC28N08S5L230-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1dd9c8340050
IAUC28N08S5L230ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 28A 8TDSON-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 14A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 40 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+23.00 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IAUC28N08S5L230ATMA1 Infineon-IAUC28N08S5L230-DataSheet-v01_00-EN.pdf?fileId=5546d4626f1cf1c5016f1dd9c8340050
IAUC28N08S5L230ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 28A 8TDSON-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 14A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 11µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 15.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 867 pF @ 40 V
Qualification: AEC-Q101
на замовлення 9526 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+97.88 грн
10+59.16 грн
100+39.08 грн
500+28.59 грн
1000+25.99 грн
2000+23.81 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IKD15N60RF INFN-S-A0004163154-1.pdf?t.download=true&u=5oefqw
IKD15N60RF
Виробник: Infineon Technologies
Description: IKD15N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 74 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 15A
Supplier Device Package: PG-TO252-3-313
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 13ns/160ns
Switching Energy: 270µJ (on), 250µJ (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 90 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 250 W
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IKB15N60T INFN-S-A0001300113-1.pdf?t.download=true&u=5oefqw
Виробник: Infineon Technologies
Description: IKB15N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/188ns
Switching Energy: 220µJ (on), 350µj (off)
Test Condition: 400V, 15A, 15Ohm, 15V
Gate Charge: 87 nC
Part Status: Active
Current - Collector (Ic) (Max): 26 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 130 W
товару немає в наявності
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IRFR9120NTRLPBF irfr9120npbf.pdf?fileId=5546d462533600a40153563607932138
IRFR9120NTRLPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+32.83 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
IRFR9120NTRLPBF irfr9120npbf.pdf?fileId=5546d462533600a40153563607932138
IRFR9120NTRLPBF
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 6.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 480mOhm @ 3.9A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
на замовлення 4879 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+49.34 грн
10+46.90 грн
100+38.59 грн
500+31.27 грн
1000+29.88 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
SLS32AIA020X4USON10XTMA4 Infineon-OPTIGA%20TRUST%20X%20SLS%2032AIA-DS-v02_60-EN.pdf?fileId=5546d462602a9dc801606f1c2ebb7fe9
SLS32AIA020X4USON10XTMA4
Виробник: Infineon Technologies
Description: OPTIGA TRUST
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Program Memory Type: NVM (10kB)
Applications: Embedded Security Trusted Computing
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
Part Status: Active
DigiKey Programmable: Not Verified
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IGP20N60H3 INFNS30175-1.pdf?t.download=true&u=5oefqw
IGP20N60H3
Виробник: Infineon Technologies
Description: IGP20N60 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/194ns
Switching Energy: 450µJ (on), 240µJ (off)
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
товару немає в наявності
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AUIPS7145RTRL auips7145r.pdf?fileId=5546d462533600a4015355a7ff1a1334
AUIPS7145RTRL
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHANNEL 1:1 DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 75mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.1A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TO252-5
Fault Protection: Current Limiting (Fixed), Over Temperature
Grade: Automotive
Part Status: Obsolete
Qualification: AEC-Q100
товару немає в наявності
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ESD106B1W0201E6327XTSA1 Infineon-ESD106-B1-W0201-DataSheet-v02_00-EN.pdf?fileId=5546d4626cb27db2016cb48375972ca5
ESD106B1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 10VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: RF Antenna
Capacitance @ Frequency: 0.13pF @ 2.5GHz
Current - Peak Pulse (10/1000µs): 1.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 15W
Power Line Protection: No
Part Status: Active
на замовлення 17787 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
29+11.14 грн
46+6.74 грн
106+2.90 грн
500+2.59 грн
1000+2.45 грн
2000+2.42 грн
5000+2.35 грн
Мінімальне замовлення: 29
В кошику  од. на суму  грн.
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