Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149489) > Сторінка 385 з 2492
| Фото | Назва | Виробник | Інформація |
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CY7C1463KV33-133AXC | Infineon Technologies |
Description: IC SRAM 36MBIT PARALLEL 100TQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 36Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 133 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 6.5 ns Memory Organization: 2M x 18 DigiKey Programmable: Not Verified |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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BA885E7631HTMA1 | Infineon Technologies |
Description: RF DIODE PIN 50V PG-SC79-2-1 Packaging: Bulk Package / Case: SC-79, SOD-523 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz Resistance @ If, F: 7Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SC79-2-1 Grade: Automotive Current - Max: 50 mA Qualification: AEC-Q101 |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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| IEWS20R5135IPBXKMA1 | Infineon Technologies |
Description: IGBT PWR MOD 20A 1350V TO247-6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IPU60R1K4C6AKMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 3.2A TO251-3Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V Power Dissipation (Max): 28.4W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: PG-TO251-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V |
на замовлення 2370 шт: термін постачання 21-31 дні (днів) |
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IPU60R1K4C6BKMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 3.2A TO251-3 |
на замовлення 40500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
| IPA50R140CP | Infineon Technologies |
Description: IPA50R140 - 500V COOLMOS N-CHANNPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 930µA Supplier Device Package: PG-TO220-3-111 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BSZ0501NSIATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 25A/40A TSDSONPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BSZ0501NSIATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 25A/40A TSDSONPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V |
на замовлення 4876 шт: термін постачання 21-31 дні (днів) |
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IPD60R210PFD7SAUMA1 | Infineon Technologies |
Description: MOSFET N-CH 600V 16A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V Power Dissipation (Max): 64W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 240µA Supplier Device Package: PG-TO252-3-344 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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IPP220N25NFD | Infineon Technologies |
Description: MOSFET N-CH 250V 61A TO220-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR7304STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8SOIC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IRFHS8342TRPBFTR | Infineon Technologies |
Description: IRFHS8342 - 20V-100V N-CHANNEL SPackaging: Bulk Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V Power Dissipation (Max): 2.1W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 6-PQFN Dual (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SPD07N60C3ATMA1 | Infineon Technologies |
Description: LOW POWER_LEGACYPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 350µA Supplier Device Package: PG-TO252-3-313 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SPD07N60C3ATMA1 | Infineon Technologies |
Description: LOW POWER_LEGACYPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 350µA Supplier Device Package: PG-TO252-3-313 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V |
на замовлення 2209 шт: термін постачання 21-31 дні (днів) |
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IPP60R199CP | Infineon Technologies |
Description: IPP60R199 - 600V COOLMOS N-CHANN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TDA5221INCT-ND | Infineon Technologies |
Description: ASK/FSK 915MHZ RECEIVERPackaging: Bulk Package / Case: 28-TSSOP (0.173", 4.40mm Width) Sensitivity: -113dBm Mounting Type: Surface Mount Frequency: 300MHz ~ 340MHz Modulation or Protocol: ASK, FSK Data Interface: PCB, Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 4.5V ~ 5.5V Applications: RKE, Remote Control Systems Current - Receiving: 6.2mA Data Rate (Max): 100kbps Antenna Connector: PCB, Surface Mount Supplier Device Package: PG-TSSOP-28 Part Status: Active |
на замовлення 2711 шт: термін постачання 21-31 дні (днів) |
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TDA5251 | Infineon Technologies |
Description: ASK/FSK 315 MHZ WIRELESS TRANSVRPackaging: Bulk Package / Case: 38-TFSOP (0.173", 4.40mm Width) Sensitivity: -109dBm Mounting Type: Surface Mount Frequency: 315MHz Type: TxRx Only Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.1V ~ 5.5V Power - Output: 13dBm Current - Receiving: 8.8mA ~ 9.8mA Data Rate (Max): 64Kbps Current - Transmitting: 5.4mA ~ 18.7mA Supplier Device Package: PG-TSSOP-38 Modulation: ASK, FSK RF Family/Standard: General ISM < 1GHz Serial Interfaces: I²C, SPI Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 2820 шт: термін постачання 21-31 дні (днів) |
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TDA5230 | Infineon Technologies |
Description: ASK/FSK SINGLE RECEIVER Packaging: Bulk Package / Case: 28-TSSOP (0.173", 4.40mm Width) Sensitivity: -111dBm Mounting Type: Surface Mount Frequency: 433MHz ~ 450MHz, 865MHz ~ 868MHz Modulation or Protocol: ASK, FSK Data Interface: PCB, Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V Applications: RKE, TPM, Security Systems Current - Receiving: 8mA Data Rate (Max): 20kbps Antenna Connector: PCB, Surface Mount Supplier Device Package: PG-TSSOP-28 Part Status: Active |
на замовлення 2272 шт: термін постачання 21-31 дні (днів) |
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TDA5231 | Infineon Technologies |
Description: ASK/FSK SINGLE RECEIVER Packaging: Bulk Package / Case: 28-TSSOP (0.173", 4.40mm Width) Sensitivity: -111dBm Mounting Type: Surface Mount Frequency: 302MHz ~ 320MHz Modulation or Protocol: ASK, FSK Data Interface: PCB, Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V Applications: RKE, TPM, Security Systems Current - Receiving: 8.4mA Data Rate (Max): 20kbps Antenna Connector: PCB, Surface Mount Supplier Device Package: PG-TSSOP-28 Part Status: Active |
на замовлення 2151 шт: термін постачання 21-31 дні (днів) |
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TLD5095EL | Infineon Technologies | Description: TLD5095 - LITIX POWER - POWER LE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IKFW50N65ES5XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 74A HSIP247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 69 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A Supplier Device Package: PG-HSIP247-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/130ns Switching Energy: 860µJ (on), 400µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 95 nC Part Status: Active Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 127 W |
на замовлення 66 шт: термін постачання 21-31 дні (днів) |
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IKZ50N65NH5XKSA | Infineon Technologies |
Description: IKZ50N65 - DISCRETE IGBT WITH ANPackaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 46 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: PG-TO247-4-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 22ns/252ns Switching Energy: 350µJ (on), 200µJ (off) Test Condition: 400V, 25A, 15Ohm, 15V Gate Charge: 109 nC Part Status: Active Current - Collector (Ic) (Max): 85 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 273 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AIGB50N65F5ATMA1 | Infineon Technologies |
Description: IGBT NPT 650V 50A TO263-3-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 650 V |
на замовлення 537 шт: термін постачання 21-31 дні (днів) |
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AIKB40N65DH5ATMA1 | Infineon Technologies |
Description: IGBT NPT 650V 40A TO263-3-2Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AIKB40N65DH5ATMA1 | Infineon Technologies |
Description: IGBT NPT 650V 40A TO263-3-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V |
на замовлення 2943 шт: термін постачання 21-31 дні (днів) |
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AIKB40N65DF5ATMA1 | Infineon Technologies |
Description: IGBT NPT 650V 40A TO263-3-2Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AIKB40N65DF5ATMA1 | Infineon Technologies |
Description: IGBT NPT 650V 40A TO263-3-2Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Supplier Device Package: PG-TO263-3-2 IGBT Type: NPT Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 650 V |
на замовлення 950 шт: термін постачання 21-31 дні (днів) |
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IGW40N65H5 | Infineon Technologies |
Description: IGBT 650V 74A 255W PG-TO247-3Packaging: Bulk Part Status: Active |
на замовлення 45097 шт: термін постачання 21-31 дні (днів) |
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IGW40N65F5 | Infineon Technologies |
Description: IGBT 650V 74A 255W PG-TO247-3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IGW40N65H5AXKSA1 | Infineon Technologies |
Description: IGBT TRENCH 650V 74A TO247-3Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Td (on/off) @ 25°C: 20ns/149ns Switching Energy: 360µJ (on), 110µJ (off) Test Condition: 400V, 20A, 15Ohm, 15V Gate Charge: 92 nC Grade: Automotive Part Status: Obsolete Current - Collector (Ic) (Max): 74 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 250 W Qualification: AEC-Q101 |
на замовлення 3360 шт: термін постачання 21-31 дні (днів) |
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TLI4971A120T5E0001XUMA1 | Infineon Technologies |
Description: CURRENT SENSOR PG-TISON-8-5Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Supplier Device Package: PG-TISON-8-5 Part Status: Active |
на замовлення 8427 шт: термін постачання 21-31 дні (днів) |
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| MB89485L-G-223-CHIP | Infineon Technologies |
Description: IC MCU 8BIT 16KB MROMPackaging: Tray Speed: 12.5MHz Program Memory Size: 16KB (16K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-8L Data Converters: A/D 4x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V Connectivity: Serial I/O, UART/USART Peripherals: LCD, POR, PWM, WDT Part Status: Obsolete Number of I/O: 39 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MB89983L-G-223-CHIP | Infineon Technologies |
Description: IC MCU 8BIT 8KB MROM Packaging: Tray Speed: 4.2MHz Program Memory Size: 8KB (8K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-8L Data Converters: A/D 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V Peripherals: LCD, POR, PWM, WDT Part Status: Obsolete Number of I/O: 47 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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EVAL1EDFG1BHBGANTOBO1 | Infineon Technologies |
Description: COOLGAN EICEDRIVER Packaging: Bulk Function: Half H-Bridge Driver (External FET) Type: Power Management Utilized IC / Part: 1EDF5673K, IGOT60R070D1 Supplied Contents: Board(s) Primary Attributes: Isolated Part Status: Active Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS70202EPAXUMA1 | Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14Packaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 12.7mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14-22 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BTS70202EPAXUMA1 | Infineon Technologies |
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14Packaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 12.7mOhm Input Type: Non-Inverting Voltage - Load: 6V ~ 18V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSDSO-14-22 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 5260 шт: термін постачання 21-31 дні (днів) |
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2ED300C17STROHSBPSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 30APackaging: Tray Package / Case: Module Mounting Type: Through Hole Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 85°C NTC Thermistor: No Supplier Device Package: Module Voltage - Collector Emitter Breakdown (Max): 1700 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| MB89935BPFV-G-369-ERE1 | Infineon Technologies |
Description: IC MCU 8BIT 16KB MROM 30SSOPPackaging: Tray Package / Case: 30-LSSOP (0.220", 5.60mm Width) Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 16KB (16K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-8L Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V Connectivity: Serial I/O, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 30-SSOP Part Status: Obsolete Number of I/O: 21 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| MB90563TPFM-G-369-BNDE1 | Infineon Technologies |
Description: IC MICROCONTROLLER 64LQFP Packaging: Tray Part Status: Obsolete DigiKey Programmable: Not Verified |
товару немає в наявності |
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| MB89165PFV-G-369-BND-RE1 | Infineon Technologies |
Description: IC MCU 8BIT 16KB MROM 80LQFP Packaging: Tray Package / Case: 80-LQFP Mounting Type: Surface Mount Speed: 4.2MHz Program Memory Size: 16KB (16K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-8L Data Converters: A/D 8x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V Connectivity: Serial I/O Peripherals: LCD, POR, PWM, WDT Supplier Device Package: 80-LQFP (12x12) Part Status: Obsolete Number of I/O: 24 DigiKey Programmable: Not Verified |
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BGSA20VGL8E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SPST 6GHZ TSNP8-1Packaging: Cut Tape (CT) Package / Case: 8-XFQFN Mounting Type: Surface Mount Circuit: SPST RF Type: CDMA, EDGE, LTE, W-CDMA Voltage - Supply: 1.65V ~ 3.6V Frequency Range: 6GHz Supplier Device Package: PG-TSNP-8-1 |
товару немає в наявності |
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S25FL064LABNFB010 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 8WSON |
товару немає в наявності |
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IRS25411STRPBFCT | Infineon Technologies |
Description: IC LED DRVR CTRLR PWM 700MA 8SOPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Voltage - Output: 8V ~ 16.6V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 500kHz Type: DC DC Controller Operating Temperature: -25°C ~ 125°C (TJ) Applications: LED Lighting Current - Output / Channel: 700mA Internal Switch(s): No Topology: Step-Down (Buck) Supplier Device Package: 8-SO Dimming: PWM Voltage - Supply (Min): 8V Voltage - Supply (Max): 16.6V |
товару немає в наявності |
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BC817-25B5000 | Infineon Technologies |
Description: BIPOLAR GENERAL PURPOSE TRANSISTPackaging: Bulk Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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IGW40N60TP | Infineon Technologies |
Description: IGW40N60 - DISCRETE IGBT WITHOUTPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A Supplier Device Package: PG-TO247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/222ns Switching Energy: 1.06mJ (on), 610µJ (off) Test Condition: 400V, 40A, 10.1Ohm, 15V Gate Charge: 177 nC Part Status: Active Current - Collector (Ic) (Max): 67 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 246 W |
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IPB022N04LG | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 90A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 2V @ 95µA Supplier Device Package: PG-TO263-3-2 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V |
на замовлення 1840 шт: термін постачання 21-31 дні (днів) |
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| IPB025N08N3 G | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 270µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V |
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IMBG120R045M1HXTMA1 | Infineon Technologies |
Description: SICFET N-CH 1.2KV 47A TO263Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 63mOhm @ 16A, 18V Power Dissipation (Max): 227W (Tc) Vgs(th) (Max) @ Id: 5.7V @ 7.5mA Supplier Device Package: PG-TO263-7-12 Part Status: Active Vgs (Max): +18V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1527 pF @ 800 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IKW30N65NL5 | Infineon Technologies |
Description: IKW30N65 - DISCRETE IGBT WITH AN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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F3L400R10W3S7B11BPSA1 | Infineon Technologies |
Description: IGBT MODULE LOW POWER EASYPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 950 V Current - Collector Cutoff (Max): 70 µA Input Capacitance (Cies) @ Vce: 25.2 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FF1200R17IP5PBPSA1 | Infineon Technologies |
Description: IGBT MODULE 1700V 1200A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Part Status: Active Current - Collector (Ic) (Max): 1200 A Voltage - Collector Emitter Breakdown (Max): 1700 V Power - Max: 20 mW Current - Collector Cutoff (Max): 10 mA Input Capacitance (Cies) @ Vce: 68 nF @ 25 V |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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IPB080N03LGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 50A D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V |
на замовлення 3239 шт: термін постачання 21-31 дні (днів) |
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IPB080N03L G | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V |
на замовлення 1250 шт: термін постачання 21-31 дні (днів) |
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SPB08N03L | Infineon Technologies |
Description: N-CHANNEL POWER MOSFETPackaging: Bulk Part Status: Active |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IPB080N03LG | Infineon Technologies |
Description: OPTLMOS N-CHANNEL POWER MOSFETPackaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TLV493DB1B6HTSA1 | Infineon Technologies |
Description: IC 3D MAGN SENSOR TSOP6-6Packaging: Bulk Part Status: Discontinued at Digi-Key |
на замовлення 49711 шт: термін постачання 21-31 дні (днів) |
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KP214N2611 | Infineon Technologies |
Description: SENSOR 16.68PSIA 4.65V DSOF8Packaging: Bulk Features: Amplified Output, Temperature Compensated Package / Case: 8-SMD Module Output Type: Analog Voltage Mounting Type: Surface Mount Output: 0.18V ~ 4.65V Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa) Pressure Type: Absolute Accuracy: ±0.65PSI (4.50kPa) Operating Temperature: -40°C ~ 125°C (TA) Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 5.5V Applications: Board Mount Supplier Device Package: PG-DSOF-8-16 Port Style: No Port Part Status: Active |
на замовлення 211472 шт: термін постачання 21-31 дні (днів) |
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ICE3PCS02GXUMA2 | Infineon Technologies |
Description: ICE3PCS02 - PFC-CCM (CONTINUOUSPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C (TJ) Voltage - Supply: 11V ~ 25V Frequency - Switching: 21kHz ~ 100kHz Mode: Continuous Conduction (CCM) Supplier Device Package: PG-DSO-8-6 Part Status: Active Current - Startup: 380 µA |
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В кошику од. на суму грн. | ||||||||||||||
| IRLC8256ED | Infineon Technologies | Description: MOSFET N-CH WAFER |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
|
IR3897MTRPBF | Infineon Technologies |
Description: IC REG BUCK ADJUSTABLE 4A 16PQFNPackaging: Tape & Reel (TR) Package / Case: 16-PowerVQFN Output Type: Adjustable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 4A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 300kHz ~ 1.5MHz Voltage - Input (Max): 21V Topology: Buck Supplier Device Package: 16-PowerQFN Synchronous Rectifier: Yes Voltage - Output (Max): 18.06V Voltage - Input (Min): 1V Voltage - Output (Min/Fixed): 0.5V Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. |
| CY7C1463KV33-133AXC |
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Виробник: Infineon Technologies
Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
Description: IC SRAM 36MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 36Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 2M x 18
DigiKey Programmable: Not Verified
на замовлення 25 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1992.74 грн |
| BA885E7631HTMA1 |
Виробник: Infineon Technologies
Description: RF DIODE PIN 50V PG-SC79-2-1
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2-1
Grade: Automotive
Current - Max: 50 mA
Qualification: AEC-Q101
Description: RF DIODE PIN 50V PG-SC79-2-1
Packaging: Bulk
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
Resistance @ If, F: 7Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SC79-2-1
Grade: Automotive
Current - Max: 50 mA
Qualification: AEC-Q101
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5323+ | 4.87 грн |
| IEWS20R5135IPBXKMA1 |
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Виробник: Infineon Technologies
Description: IGBT PWR MOD 20A 1350V TO247-6
Description: IGBT PWR MOD 20A 1350V TO247-6
товару немає в наявності
В кошику
од. на суму грн.
| IPU60R1K4C6AKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
Description: MOSFET N-CH 600V 3.2A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.1A, 10V
Power Dissipation (Max): 28.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 100 V
на замовлення 2370 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 989+ | 23.50 грн |
| IPU60R1K4C6BKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO251-3
Description: MOSFET N-CH 600V 3.2A TO251-3
на замовлення 40500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| IPA50R140CP |
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Виробник: Infineon Technologies
Description: IPA50R140 - 500V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
Description: IPA50R140 - 500V COOLMOS N-CHANN
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 14A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 930µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
| BSZ0501NSIATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 25A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
Description: MOSFET N-CH 30V 25A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| BSZ0501NSIATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 25A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
Description: MOSFET N-CH 30V 25A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 15 V
на замовлення 4876 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 169.47 грн |
| 10+ | 104.56 грн |
| 100+ | 70.93 грн |
| 500+ | 53.04 грн |
| 1000+ | 48.70 грн |
| 2000+ | 45.04 грн |
| IPD60R210PFD7SAUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 16A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
Description: MOSFET N-CH 600V 16A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 4.9A, 10V
Power Dissipation (Max): 64W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 240µA
Supplier Device Package: PG-TO252-3-344
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1015 pF @ 400 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 46.35 грн |
| IPP220N25NFD |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 61A TO220-3
Description: MOSFET N-CH 250V 61A TO220-3
товару немає в наявності
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| IR7304STRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
товару немає в наявності
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| IRFHS8342TRPBFTR |
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Виробник: Infineon Technologies
Description: IRFHS8342 - 20V-100V N-CHANNEL S
Packaging: Bulk
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
Description: IRFHS8342 - 20V-100V N-CHANNEL S
Packaging: Bulk
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 25 V
товару немає в наявності
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| SPD07N60C3ATMA1 |
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Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Description: LOW POWER_LEGACY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
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| SPD07N60C3ATMA1 |
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Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
Description: LOW POWER_LEGACY
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO252-3-313
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 25 V
на замовлення 2209 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 216.31 грн |
| 10+ | 134.82 грн |
| 100+ | 93.12 грн |
| 500+ | 72.81 грн |
| IPP60R199CP |
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Виробник: Infineon Technologies
Description: IPP60R199 - 600V COOLMOS N-CHANN
Description: IPP60R199 - 600V COOLMOS N-CHANN
товару немає в наявності
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| TDA5221INCT-ND |
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Виробник: Infineon Technologies
Description: ASK/FSK 915MHZ RECEIVER
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 340MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 6.2mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
Description: ASK/FSK 915MHZ RECEIVER
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -113dBm
Mounting Type: Surface Mount
Frequency: 300MHz ~ 340MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 4.5V ~ 5.5V
Applications: RKE, Remote Control Systems
Current - Receiving: 6.2mA
Data Rate (Max): 100kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
на замовлення 2711 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 224+ | 104.04 грн |
| TDA5251 |
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Виробник: Infineon Technologies
Description: ASK/FSK 315 MHZ WIRELESS TRANSVR
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Sensitivity: -109dBm
Mounting Type: Surface Mount
Frequency: 315MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 5.5V
Power - Output: 13dBm
Current - Receiving: 8.8mA ~ 9.8mA
Data Rate (Max): 64Kbps
Current - Transmitting: 5.4mA ~ 18.7mA
Supplier Device Package: PG-TSSOP-38
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I²C, SPI
Part Status: Active
DigiKey Programmable: Not Verified
Description: ASK/FSK 315 MHZ WIRELESS TRANSVR
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Sensitivity: -109dBm
Mounting Type: Surface Mount
Frequency: 315MHz
Type: TxRx Only
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.1V ~ 5.5V
Power - Output: 13dBm
Current - Receiving: 8.8mA ~ 9.8mA
Data Rate (Max): 64Kbps
Current - Transmitting: 5.4mA ~ 18.7mA
Supplier Device Package: PG-TSSOP-38
Modulation: ASK, FSK
RF Family/Standard: General ISM < 1GHz
Serial Interfaces: I²C, SPI
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 2820 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 184+ | 127.85 грн |
| TDA5230 |
Виробник: Infineon Technologies
Description: ASK/FSK SINGLE RECEIVER
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -111dBm
Mounting Type: Surface Mount
Frequency: 433MHz ~ 450MHz, 865MHz ~ 868MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Applications: RKE, TPM, Security Systems
Current - Receiving: 8mA
Data Rate (Max): 20kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
Description: ASK/FSK SINGLE RECEIVER
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -111dBm
Mounting Type: Surface Mount
Frequency: 433MHz ~ 450MHz, 865MHz ~ 868MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Applications: RKE, TPM, Security Systems
Current - Receiving: 8mA
Data Rate (Max): 20kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
на замовлення 2272 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 143+ | 163.82 грн |
| TDA5231 |
Виробник: Infineon Technologies
Description: ASK/FSK SINGLE RECEIVER
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -111dBm
Mounting Type: Surface Mount
Frequency: 302MHz ~ 320MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Applications: RKE, TPM, Security Systems
Current - Receiving: 8.4mA
Data Rate (Max): 20kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
Description: ASK/FSK SINGLE RECEIVER
Packaging: Bulk
Package / Case: 28-TSSOP (0.173", 4.40mm Width)
Sensitivity: -111dBm
Mounting Type: Surface Mount
Frequency: 302MHz ~ 320MHz
Modulation or Protocol: ASK, FSK
Data Interface: PCB, Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 3.6V, 4.5V ~ 5.5V
Applications: RKE, TPM, Security Systems
Current - Receiving: 8.4mA
Data Rate (Max): 20kbps
Antenna Connector: PCB, Surface Mount
Supplier Device Package: PG-TSSOP-28
Part Status: Active
на замовлення 2151 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 143+ | 163.82 грн |
| TLD5095EL |
Виробник: Infineon Technologies
Description: TLD5095 - LITIX POWER - POWER LE
Description: TLD5095 - LITIX POWER - POWER LE
товару немає в наявності
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| IKFW50N65ES5XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 69 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 127 W
Description: IGBT TRENCH FS 650V 74A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 69 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 40A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/130ns
Switching Energy: 860µJ (on), 400µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 95 nC
Part Status: Active
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 127 W
на замовлення 66 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 767.29 грн |
| 30+ | 434.82 грн |
| IKZ50N65NH5XKSA |
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Виробник: Infineon Technologies
Description: IKZ50N65 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/252ns
Switching Energy: 350µJ (on), 200µJ (off)
Test Condition: 400V, 25A, 15Ohm, 15V
Gate Charge: 109 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
Description: IKZ50N65 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: PG-TO247-4-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22ns/252ns
Switching Energy: 350µJ (on), 200µJ (off)
Test Condition: 400V, 25A, 15Ohm, 15V
Gate Charge: 109 nC
Part Status: Active
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 273 W
товару немає в наявності
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| AIGB50N65F5ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 50A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
на замовлення 537 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 436.02 грн |
| 10+ | 281.36 грн |
| 100+ | 202.88 грн |
| 500+ | 188.40 грн |
| AIKB40N65DH5ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 113.57 грн |
| AIKB40N65DH5ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
на замовлення 2943 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 322.76 грн |
| 10+ | 205.10 грн |
| 100+ | 145.13 грн |
| 500+ | 125.63 грн |
| AIKB40N65DF5ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
товару немає в наявності
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| AIKB40N65DF5ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Description: IGBT NPT 650V 40A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Supplier Device Package: PG-TO263-3-2
IGBT Type: NPT
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
на замовлення 950 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 324.46 грн |
| 10+ | 205.92 грн |
| 100+ | 145.79 грн |
| 500+ | 126.32 грн |
| IGW40N65H5 |
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Виробник: Infineon Technologies
Description: IGBT 650V 74A 255W PG-TO247-3
Packaging: Bulk
Part Status: Active
Description: IGBT 650V 74A 255W PG-TO247-3
Packaging: Bulk
Part Status: Active
на замовлення 45097 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 145+ | 164.89 грн |
| IGW40N65F5 |
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Виробник: Infineon Technologies
Description: IGBT 650V 74A 255W PG-TO247-3
Description: IGBT 650V 74A 255W PG-TO247-3
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| IGW40N65H5AXKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH 650V 74A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/149ns
Switching Energy: 360µJ (on), 110µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 92 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
Description: IGBT TRENCH 650V 74A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench
Td (on/off) @ 25°C: 20ns/149ns
Switching Energy: 360µJ (on), 110µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 92 nC
Grade: Automotive
Part Status: Obsolete
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 250 W
Qualification: AEC-Q101
на замовлення 3360 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 88+ | 246.29 грн |
| TLI4971A120T5E0001XUMA1 |
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Виробник: Infineon Technologies
Description: CURRENT SENSOR PG-TISON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Description: CURRENT SENSOR PG-TISON-8-5
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TISON-8-5
Part Status: Active
на замовлення 8427 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 332.12 грн |
| 5+ | 287.18 грн |
| 10+ | 274.80 грн |
| 25+ | 244.15 грн |
| 50+ | 234.76 грн |
| 100+ | 226.14 грн |
| 500+ | 205.50 грн |
| MB89485L-G-223-CHIP |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 39
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB MROM
Packaging: Tray
Speed: 12.5MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 3.6V
Connectivity: Serial I/O, UART/USART
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 39
DigiKey Programmable: Not Verified
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| MB89983L-G-223-CHIP |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB MROM
Packaging: Tray
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB MROM
Packaging: Tray
Speed: 4.2MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Peripherals: LCD, POR, PWM, WDT
Part Status: Obsolete
Number of I/O: 47
DigiKey Programmable: Not Verified
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| EVAL1EDFG1BHBGANTOBO1 |
Виробник: Infineon Technologies
Description: COOLGAN EICEDRIVER
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Utilized IC / Part: 1EDF5673K, IGOT60R070D1
Supplied Contents: Board(s)
Primary Attributes: Isolated
Part Status: Active
Contents: Board(s)
Description: COOLGAN EICEDRIVER
Packaging: Bulk
Function: Half H-Bridge Driver (External FET)
Type: Power Management
Utilized IC / Part: 1EDF5673K, IGOT60R070D1
Supplied Contents: Board(s)
Primary Attributes: Isolated
Part Status: Active
Contents: Board(s)
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| BTS70202EPAXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 12.7mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 12.7mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 64.26 грн |
| BTS70202EPAXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 12.7mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: IC PWR SWTCH N-CHAN 1:1 TSDSO-14
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 12.7mOhm
Input Type: Non-Inverting
Voltage - Load: 6V ~ 18V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14-22
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, UVLO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 5260 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 128.59 грн |
| 10+ | 90.86 грн |
| 25+ | 82.60 грн |
| 100+ | 69.03 грн |
| 250+ | 64.99 грн |
| 500+ | 62.56 грн |
| 1000+ | 59.56 грн |
| 2ED300C17STROHSBPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 30A
Packaging: Tray
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 85°C
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
Description: IGBT MODULE 1700V 30A
Packaging: Tray
Package / Case: Module
Mounting Type: Through Hole
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 85°C
NTC Thermistor: No
Supplier Device Package: Module
Voltage - Collector Emitter Breakdown (Max): 1700 V
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| MB89935BPFV-G-369-ERE1 |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 30SSOP
Packaging: Tray
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 30-SSOP
Part Status: Obsolete
Number of I/O: 21
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB MROM 30SSOP
Packaging: Tray
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 5.5V
Connectivity: Serial I/O, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 30-SSOP
Part Status: Obsolete
Number of I/O: 21
DigiKey Programmable: Not Verified
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| MB90563TPFM-G-369-BNDE1 |
Виробник: Infineon Technologies
Description: IC MICROCONTROLLER 64LQFP
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
Description: IC MICROCONTROLLER 64LQFP
Packaging: Tray
Part Status: Obsolete
DigiKey Programmable: Not Verified
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| MB89165PFV-G-369-BND-RE1 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB MROM 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 16KB MROM 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 4.2MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-8L
Data Converters: A/D 8x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.2V ~ 6V
Connectivity: Serial I/O
Peripherals: LCD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Part Status: Obsolete
Number of I/O: 24
DigiKey Programmable: Not Verified
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| BGSA20VGL8E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SPST 6GHZ TSNP8-1
Packaging: Cut Tape (CT)
Package / Case: 8-XFQFN
Mounting Type: Surface Mount
Circuit: SPST
RF Type: CDMA, EDGE, LTE, W-CDMA
Voltage - Supply: 1.65V ~ 3.6V
Frequency Range: 6GHz
Supplier Device Package: PG-TSNP-8-1
Description: IC RF SWITCH SPST 6GHZ TSNP8-1
Packaging: Cut Tape (CT)
Package / Case: 8-XFQFN
Mounting Type: Surface Mount
Circuit: SPST
RF Type: CDMA, EDGE, LTE, W-CDMA
Voltage - Supply: 1.65V ~ 3.6V
Frequency Range: 6GHz
Supplier Device Package: PG-TSNP-8-1
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| S25FL064LABNFB010 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8WSON
Description: IC FLASH 64MBIT SPI/QUAD 8WSON
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| IRS25411STRPBFCT |
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Виробник: Infineon Technologies
Description: IC LED DRVR CTRLR PWM 700MA 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 8V ~ 16.6V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -25°C ~ 125°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 700mA
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-SO
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 16.6V
Description: IC LED DRVR CTRLR PWM 700MA 8SO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Voltage - Output: 8V ~ 16.6V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 500kHz
Type: DC DC Controller
Operating Temperature: -25°C ~ 125°C (TJ)
Applications: LED Lighting
Current - Output / Channel: 700mA
Internal Switch(s): No
Topology: Step-Down (Buck)
Supplier Device Package: 8-SO
Dimming: PWM
Voltage - Supply (Min): 8V
Voltage - Supply (Max): 16.6V
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| BC817-25B5000 |
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Виробник: Infineon Technologies
Description: BIPOLAR GENERAL PURPOSE TRANSIST
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
Description: BIPOLAR GENERAL PURPOSE TRANSIST
Packaging: Bulk
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 8955+ | 2.21 грн |
| IGW40N60TP |
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Виробник: Infineon Technologies
Description: IGW40N60 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/222ns
Switching Energy: 1.06mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 10.1Ohm, 15V
Gate Charge: 177 nC
Part Status: Active
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 246 W
Description: IGW40N60 - DISCRETE IGBT WITHOUT
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 40A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/222ns
Switching Energy: 1.06mJ (on), 610µJ (off)
Test Condition: 400V, 40A, 10.1Ohm, 15V
Gate Charge: 177 nC
Part Status: Active
Current - Collector (Ic) (Max): 67 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 246 W
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| IPB022N04LG |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 90A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 95µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
на замовлення 1840 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 335+ | 72.54 грн |
| IPB025N08N3 G |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 270µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
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| IMBG120R045M1HXTMA1 |
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Виробник: Infineon Technologies
Description: SICFET N-CH 1.2KV 47A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 16A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1527 pF @ 800 V
Description: SICFET N-CH 1.2KV 47A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 16A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5.7V @ 7.5mA
Supplier Device Package: PG-TO263-7-12
Part Status: Active
Vgs (Max): +18V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1527 pF @ 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1000+ | 493.26 грн |
| IKW30N65NL5 |
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Виробник: Infineon Technologies
Description: IKW30N65 - DISCRETE IGBT WITH AN
Description: IKW30N65 - DISCRETE IGBT WITH AN
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| F3L400R10W3S7B11BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 950 V
Current - Collector Cutoff (Max): 70 µA
Input Capacitance (Cies) @ Vce: 25.2 nF @ 25 V
Description: IGBT MODULE LOW POWER EASY
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 950 V
Current - Collector Cutoff (Max): 70 µA
Input Capacitance (Cies) @ Vce: 25.2 nF @ 25 V
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| FF1200R17IP5PBPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
Description: IGBT MODULE 1700V 1200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1200A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 1200 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 68 nF @ 25 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 47064.46 грн |
| IPB080N03LGATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Description: MOSFET N-CH 30V 50A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
на замовлення 3239 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 472+ | 47.07 грн |
| IPB080N03L G |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
на замовлення 1250 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 693+ | 34.66 грн |
| SPB08N03L |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 88+ | 292.95 грн |
| IPB080N03LG |
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Виробник: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A
Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 15 V
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| TLV493DB1B6HTSA1 |
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Виробник: Infineon Technologies
Description: IC 3D MAGN SENSOR TSOP6-6
Packaging: Bulk
Part Status: Discontinued at Digi-Key
Description: IC 3D MAGN SENSOR TSOP6-6
Packaging: Bulk
Part Status: Discontinued at Digi-Key
на замовлення 49711 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 433+ | 50.75 грн |
| KP214N2611 |
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Виробник: Infineon Technologies
Description: SENSOR 16.68PSIA 4.65V DSOF8
Packaging: Bulk
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.18V ~ 4.65V
Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.65PSI (4.50kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
Description: SENSOR 16.68PSIA 4.65V DSOF8
Packaging: Bulk
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.18V ~ 4.65V
Operating Pressure: 2.18 ~ 16.68PSI (15 ~ 115kPa)
Pressure Type: Absolute
Accuracy: ±0.65PSI (4.50kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
на замовлення 211472 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 95+ | 246.12 грн |
| ICE3PCS02GXUMA2 |
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Виробник: Infineon Technologies
Description: ICE3PCS02 - PFC-CCM (CONTINUOUS
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 21kHz ~ 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8-6
Part Status: Active
Current - Startup: 380 µA
Description: ICE3PCS02 - PFC-CCM (CONTINUOUS
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 11V ~ 25V
Frequency - Switching: 21kHz ~ 100kHz
Mode: Continuous Conduction (CCM)
Supplier Device Package: PG-DSO-8-6
Part Status: Active
Current - Startup: 380 µA
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| IRLC8256ED |
Виробник: Infineon Technologies
Description: MOSFET N-CH WAFER
Description: MOSFET N-CH WAFER
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| IR3897MTRPBF |
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Виробник: Infineon Technologies
Description: IC REG BUCK ADJUSTABLE 4A 16PQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 16-PowerQFN
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Obsolete
Description: IC REG BUCK ADJUSTABLE 4A 16PQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 4A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1.5MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 16-PowerQFN
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 0.5V
Part Status: Obsolete
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