Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148679) > Сторінка 386 з 2478
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
TLE75080EMDXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: SPI Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 1Ohm Voltage - Load: 3V ~ 28V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 330mA Ratio - Input:Output: 1:8 Supplier Device Package: PG-SSOP-24-9 Fault Protection: Open Load Detect, Over Temperature, Over Voltage Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
TLE75080EMHXUMA1 | Infineon Technologies |
![]() Features: 0.10" (2.54mm) Tip Length Packaging: Tape & Reel (TR) Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 8 Interface: SPI Switch Type: Relay, Solenoid Driver Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 1Ohm Voltage - Load: 3V ~ 28V Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Current - Output (Max): 330mA Ratio - Input:Output: 1:8 Supplier Device Package: PG-SSOP-24-9 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
IKW20N60H3 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 112 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 17ns/194ns Switching Energy: 560µJ (on), 240µJ (off) Test Condition: 400V, 20A, 14.6Ohm, 15V Gate Charge: 120 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 80 A Power - Max: 170 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
IHW20N120R5 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 20A Supplier Device Package: PG-TO247-3-41 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/260ns Switching Energy: -, 750µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 170 nC Part Status: Active Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 288 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
T920N04TOFXPSA1 | Infineon Technologies |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
IPB120N04S302ATMA1 | Infineon Technologies |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
TLI4966GHTSA1 | Infineon Technologies |
![]() Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: Digital Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Bipolar Switch Operating Temperature: -40°C ~ 115°C (TA) Voltage - Supply: 2.7V ~ 18V Technology: Hall Effect Sensing Range: 10mT Trip, -10mT Release Current - Output (Max): 10mA Current - Supply (Max): 7mA Supplier Device Package: PG-TSOP6-6-9 Test Condition: 25°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
TLI4966GHTSA1 | Infineon Technologies |
![]() Features: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: Digital Polarization: North Pole, South Pole Mounting Type: Surface Mount Function: Bipolar Switch Operating Temperature: -40°C ~ 115°C (TA) Voltage - Supply: 2.7V ~ 18V Technology: Hall Effect Sensing Range: 10mT Trip, -10mT Release Current - Output (Max): 10mA Current - Supply (Max): 7mA Supplier Device Package: PG-TSOP6-6-9 Test Condition: 25°C |
на замовлення 2834 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
IFX91041EJV50 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 1.8A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 370kHz Voltage - Input (Max): 45V Topology: Buck Supplier Device Package: PG-DSO-8 Synchronous Rectifier: No Voltage - Input (Min): 4.75V Voltage - Output (Min/Fixed): 5V Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
SAF-XE167FM-48F80L AA | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 384KB (384K x 8) RAM Size: 34K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 24x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-144-4 Number of I/O: 119 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
SAK-XE167FM-48F80L AA | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 144-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 384KB (384K x 8) RAM Size: 34K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 24x10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I2S, POR, PWM, WDT Supplier Device Package: PG-LQFP-144-4 Number of I/O: 119 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
TDB6HK180N16RRBOSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter with Brake Operating Temperature: 175°C (TJ) Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode Current - Hold (Ih) (Max): 220 mA Current - Gate Trigger (Igt) (Max): 100 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A Number of SCRs, Diodes: 3 SCRs, 3 Diodes Voltage - Gate Trigger (Vgt) (Max): 2 V NTC Thermistor: No Supplier Device Package: AG-ECONO2B Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 140 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 515 W Voltage - Off State: 1.6 kV Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
KP219N3621 | Infineon Technologies |
![]() Packaging: Bulk Features: Amplified Output, Temperature Compensated Package / Case: 8-SMD Module Output Type: Analog Voltage Mounting Type: Surface Mount Output: 0.25V ~ 4.95V Operating Pressure: 2.18 ~ 14.79PSI (15 ~ 102kPa) Pressure Type: Absolute Accuracy: ±0.65PSI (4.50kPa) Operating Temperature: -40°C ~ 125°C (TA) Termination Style: SMD (SMT) Tab Voltage - Supply: 4.5V ~ 5.5V Applications: Board Mount Supplier Device Package: PG-DSOF-8-16 Port Style: No Port Part Status: Active |
на замовлення 42180 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BA592E6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-76, SOD-323 Diode Type: Standard - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz Resistance @ If, F: 500mOhm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 35V Supplier Device Package: PG-SOD323-2-1 Part Status: Active Current - Max: 100 mA |
на замовлення 25252 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BAR6402LRHE6327XTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SOD-882 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-TSLP-2-7 Part Status: Obsolete Current - Max: 100 mA Power Dissipation (Max): 250 mW |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BAR64-03W | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BAR64-03WE6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-76, SOD-323 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-SOD323-2-1 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BCW65A | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BCW65C | Infineon Technologies |
![]() Packaging: Bulk Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
TLE4205GNTMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Function: Driver - Fully Integrated, Control and Power Stage Current - Output: 1A Interface: Parallel Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 6V ~ 32V Applications: Automotive Technology: Bipolar Voltage - Load: 6V ~ 32V Supplier Device Package: PG-DSO-20 Motor Type - AC, DC: Brushed DC Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
AUIR3242BOARDUNIDIRTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Function: Power Distribution Switch (Load Switch) Type: Power Management Utilized IC / Part: AUIR3242S Supplied Contents: Board(s) Part Status: Obsolete |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
AUIR3242SDEMOBOARDTOBO1 | Infineon Technologies |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
IGW25T120 | Infineon Technologies |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BAS12504WH6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SOT-323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 25 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA Current - Reverse Leakage @ Vr: 150 nA @ 25 V |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BAS12504WH6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: SOT-323 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 25 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA Current - Reverse Leakage @ Vr: 150 nA @ 25 V |
на замовлення 9535 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BAS12507WH6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 100mA (DC) Supplier Device Package: PG-SOT343-4-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 25 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA Current - Reverse Leakage @ Vr: 150 nA @ 25 V |
на замовлення 10214 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
IRS2982STRPBF | Infineon Technologies |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
IRS2982STRPBF | Infineon Technologies |
![]() |
на замовлення 609 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
IHW30N60T | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A Supplier Device Package: PG-TO247-3-21 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 23ns/254ns Switching Energy: 770µJ (off) Test Condition: 400V, 30A, 10.6Ohm, 15V Gate Charge: 167 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 187 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
BAS4007WH6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: PG-SOT343-4 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
BAS40-07WH6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: SC-82A, SOT-343 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: PG-SOT343-4 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
BAS40-07E6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-253-4, TO-253AA Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 120mA (DC) Supplier Device Package: SOT143 (SC-61) Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA Current - Reverse Leakage @ Vr: 1 µA @ 30 V |
на замовлення 760249 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IPU95R450P7AKMA1 | Infineon Technologies |
![]() |
на замовлення 972 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
IFX1763LDVXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 10-TFDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 20V Number of Regulators: 1 Supplier Device Package: PG-TSON-10 Voltage - Output (Max): 20V Voltage - Output (Min/Fixed): 1.22V Control Features: Enable Part Status: Obsolete PSRR: 65dB (120Hz) Voltage Dropout (Max): 0.45V @ 500mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 31 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
IFX1763LDV33XUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 10-TFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 60 µA Voltage - Input (Max): 20V Number of Regulators: 1 Supplier Device Package: PG-TSON-10 Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Obsolete PSRR: 65dB (120Hz) Voltage Dropout (Max): 0.45V @ 500mA Protection Features: Over Current, Over Temperature, Reverse Polarity Current - Supply (Max): 31 mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
IPA60R190C6 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V Power Dissipation (Max): 34W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 630µA Supplier Device Package: PG-TO220-3-111 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
TLE9461ESXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Type: System Basis Chip (SBC) Applications: CAN Supplier Device Package: PG-TSDSO-24-1 DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
на замовлення 9754 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
2ED020I12FA | Infineon Technologies |
Description: 2ED020 - GATE DRIVER Packaging: Bulk Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 13V ~ 20V Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 1200 V Supplier Device Package: PG-DSO-36 Rise / Fall Time (Typ): 30ns, 50ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel, P-Channel MOSFET Logic Voltage - VIL, VIH: 1.5V, 3.5V Current - Peak Output (Source, Sink): 2.4A, 2.4A Part Status: Active DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
IGW60T120 | Infineon Technologies |
![]() |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
BAT165E6327 | Infineon Technologies |
Description: BAT165 - RECTIFIER DIODE, SCHOTT Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 12pF @ 10V, 1MHz Current - Average Rectified (Io): 750mA Supplier Device Package: PG-SOD323-2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
BAT165 | Infineon Technologies |
Description: DIODE SCHOTT 40V 750MA SOD323-2 Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 12pF @ 10V, 1MHz Current - Average Rectified (Io): 750mA Supplier Device Package: PG-SOD323-2 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
REFICL5102U52WCCTOBO1 | Infineon Technologies |
![]() Packaging: Bulk Voltage - Output: 20V ~ 52V Voltage - Input: 198 ~ 256 VAC Utilized IC / Part: ICL5102 Supplied Contents: Board(s) Outputs and Type: 1 Non-Isolated Output Part Status: Active Contents: Board(s) |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
IPP60R060P7 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 4V @ 800µA Supplier Device Package: PG-TO220-3-123 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
IKFW75N65EH5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 75 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A Supplier Device Package: PG-HSIP247-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/206ns Switching Energy: 1.8mJ (on), 600µJ (off) Test Condition: 400V, 60A, 12Ohm, 15V Gate Charge: 144 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 148 W |
на замовлення 38 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
IKFW75N65ES5XKSA1 | Infineon Technologies |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 71 ns Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A Supplier Device Package: PG-HSIP247-3-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 24ns/152ns Switching Energy: 1.48mJ (on), 660µJ (off) Test Condition: 400V, 60A, 8Ohm, 15V Gate Charge: 144 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 240 A Power - Max: 148 W |
на замовлення 241 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
IKZ75N65NH5 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 59 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A Supplier Device Package: PG-TO247-4-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 52ns/412ns Switching Energy: 880µJ (on), 520µJ (off) Test Condition: 400V, 37.5A, 27Ohm, 15V Gate Charge: 166 nC Part Status: Active Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 395 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
BSP50E6327 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V Frequency - Transition: 200MHz Supplier Device Package: PG-SOT223-4 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1.5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
IAUC120N06S5L032ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 44µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
IAUC120N06S5L032ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tj) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 44µA Supplier Device Package: PG-TDSON-8-34 Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 10270 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
IPD040N03LG | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
IPD40N03S4L08ATMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 11282 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
IPB240N03S4LR9ATMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 180µA Supplier Device Package: PG-TO263-7-3 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 21485 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
CY90911ASPMC-GS-111E1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-16LX Data Converters: A/D 16x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, LINbus, UART/USART Peripherals: POR, WDT Supplier Device Package: 48-LQFP (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
IRFR5505TRLPBF | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
IRFR5505TRLPBF | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
![]() |
HYB25L512160AC-7.5 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 54-LFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TC) Voltage - Supply: 2.3V ~ 3.6V Technology: SDRAM - Mobile LPDDR Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 54-FBGA (8x12) Part Status: Active Write Cycle Time - Word, Page: 14ns Memory Interface: Parallel Access Time: 6 ns Memory Organization: 32M x 16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
HYB25L512160AC-7.5 REEL | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 54-LFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TC) Voltage - Supply: 2.3V ~ 3.6V Technology: SDRAM - Mobile LPDDR Clock Frequency: 133 MHz Memory Format: DRAM Supplier Device Package: 54-FBGA (8x12) Part Status: Active Write Cycle Time - Word, Page: 14ns Memory Interface: Parallel Access Time: 6 ns Memory Organization: 32M x 16 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
![]() |
IPB70N10S3L12ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 11.8mOhm @ 70A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 83µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
IPB70N10S3L12ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 11.8mOhm @ 70A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 83µA Supplier Device Package: PG-TO263-3-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V |
на замовлення 19969 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
![]() |
BSC070N10NS5SCATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 50µA Supplier Device Package: PG-WSON-8-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
|
TLE75080EMDXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:8 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-SSOP-24-9
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR DRIVER N-CHAN 1:8 24SSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-SSOP-24-9
Fault Protection: Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
TLE75080EMHXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC PWR DRIVER N-CHAN 1:8 24SSOP
Features: 0.10" (2.54mm) Tip Length
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-SSOP-24-9
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
Description: IC PWR DRIVER N-CHAN 1:8 24SSOP
Features: 0.10" (2.54mm) Tip Length
Packaging: Tape & Reel (TR)
Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: SPI
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 1Ohm
Voltage - Load: 3V ~ 28V
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Current - Output (Max): 330mA
Ratio - Input:Output: 1:8
Supplier Device Package: PG-SSOP-24-9
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
IKW20N60H3 |
![]() |
Виробник: Infineon Technologies
Description: IKW20N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/194ns
Switching Energy: 560µJ (on), 240µJ (off)
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
Description: IKW20N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 112 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/194ns
Switching Energy: 560µJ (on), 240µJ (off)
Test Condition: 400V, 20A, 14.6Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 170 W
товару немає в наявності
В кошику
од. на суму грн.
IHW20N120R5 |
![]() |
Виробник: Infineon Technologies
Description: IHW20N120 - DISCRETE IGBT WITH A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 20A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/260ns
Switching Energy: -, 750µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 288 W
Description: IHW20N120 - DISCRETE IGBT WITH A
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 20A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/260ns
Switching Energy: -, 750µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 170 nC
Part Status: Active
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 288 W
товару немає в наявності
В кошику
од. на суму грн.
T920N04TOFXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 600V 1500A DO200AA
Description: SCR MODULE 600V 1500A DO200AA
товару немає в наявності
В кошику
од. на суму грн.
IPB120N04S302ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
товару немає в наявності
В кошику
од. на суму грн.
TLI4966GHTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH BIPOLAR TSOP6-6-9
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Digital
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 115°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 10mT Trip, -10mT Release
Current - Output (Max): 10mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6-9
Test Condition: 25°C
Description: MAG SWITCH BIPOLAR TSOP6-6-9
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Digital
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 115°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 10mT Trip, -10mT Release
Current - Output (Max): 10mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6-9
Test Condition: 25°C
товару немає в наявності
В кошику
од. на суму грн.
TLI4966GHTSA1 |
![]() |
Виробник: Infineon Technologies
Description: MAG SWITCH BIPOLAR TSOP6-6-9
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Digital
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 115°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 10mT Trip, -10mT Release
Current - Output (Max): 10mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6-9
Test Condition: 25°C
Description: MAG SWITCH BIPOLAR TSOP6-6-9
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: Digital
Polarization: North Pole, South Pole
Mounting Type: Surface Mount
Function: Bipolar Switch
Operating Temperature: -40°C ~ 115°C (TA)
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 10mT Trip, -10mT Release
Current - Output (Max): 10mA
Current - Supply (Max): 7mA
Supplier Device Package: PG-TSOP6-6-9
Test Condition: 25°C
на замовлення 2834 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 46.16 грн |
8+ | 39.24 грн |
10+ | 37.01 грн |
25+ | 32.48 грн |
50+ | 30.90 грн |
100+ | 29.45 грн |
500+ | 26.13 грн |
1000+ | 25.08 грн |
IFX91041EJV50 |
![]() |
Виробник: Infineon Technologies
Description: IFX91041 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
Description: IFX91041 - SWITCHING REGULATORS
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1.8A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 370kHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-DSO-8
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
SAF-XE167FM-48F80L AA |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
SAK-XE167FM-48F80L AA |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 384KB FLASH 144LQFP
Packaging: Tape & Reel (TR)
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 24x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-144-4
Number of I/O: 119
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
TDB6HK180N16RRBOSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE VDRM 1600V 70A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter with Brake
Operating Temperature: 175°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 2 V
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Voltage - Off State: 1.6 kV
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
Description: SCR MODULE VDRM 1600V 70A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter with Brake
Operating Temperature: 175°C (TJ)
Structure: Bridge, 3-Phase - SCRs/Diodes - IGBT with Diode
Current - Hold (Ih) (Max): 220 mA
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1600A @ 50Hz
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 100A
Number of SCRs, Diodes: 3 SCRs, 3 Diodes
Voltage - Gate Trigger (Vgt) (Max): 2 V
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 515 W
Voltage - Off State: 1.6 kV
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.3 nF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
KP219N3621 |
![]() |
Виробник: Infineon Technologies
Description: SENSOR 14.79PSIA 4.95V DSOF8
Packaging: Bulk
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.25V ~ 4.95V
Operating Pressure: 2.18 ~ 14.79PSI (15 ~ 102kPa)
Pressure Type: Absolute
Accuracy: ±0.65PSI (4.50kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
Description: SENSOR 14.79PSIA 4.95V DSOF8
Packaging: Bulk
Features: Amplified Output, Temperature Compensated
Package / Case: 8-SMD Module
Output Type: Analog Voltage
Mounting Type: Surface Mount
Output: 0.25V ~ 4.95V
Operating Pressure: 2.18 ~ 14.79PSI (15 ~ 102kPa)
Pressure Type: Absolute
Accuracy: ±0.65PSI (4.50kPa)
Operating Temperature: -40°C ~ 125°C (TA)
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Applications: Board Mount
Supplier Device Package: PG-DSOF-8-16
Port Style: No Port
Part Status: Active
на замовлення 42180 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
87+ | 275.35 грн |
BA592E6327 |
![]() |
Виробник: Infineon Technologies
Description: BA592 - PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 100 mA
Description: BA592 - PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: Standard - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
Resistance @ If, F: 500mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 100 mA
на замовлення 25252 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3904+ | 6.37 грн |
BAR6402LRHE6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: RF DIODE PIN 150V 250MW TSLP27
Packaging: Bulk
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-7
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 150V 250MW TSLP27
Packaging: Bulk
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-TSLP-2-7
Part Status: Obsolete
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12000+ | 2.28 грн |
BAR64-03WE6327 |
![]() |
Виробник: Infineon Technologies
Description: BAR64 - PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: BAR64 - PIN DIODE
Packaging: Bulk
Package / Case: SC-76, SOD-323
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
Resistance @ If, F: 1.35Ohm @ 100mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOD323-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
товару немає в наявності
В кошику
од. на суму грн.
BCW65A |
![]() |
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
BCW65C |
![]() |
Виробник: Infineon Technologies
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Packaging: Bulk
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
TLE4205GNTMA1 |
![]() |
Виробник: Infineon Technologies
Description: TLE4205 - SERVO AND STEPPER MOTO
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 32V
Applications: Automotive
Technology: Bipolar
Voltage - Load: 6V ~ 32V
Supplier Device Package: PG-DSO-20
Motor Type - AC, DC: Brushed DC
Part Status: Active
Description: TLE4205 - SERVO AND STEPPER MOTO
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1A
Interface: Parallel
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 6V ~ 32V
Applications: Automotive
Technology: Bipolar
Voltage - Load: 6V ~ 32V
Supplier Device Package: PG-DSO-20
Motor Type - AC, DC: Brushed DC
Part Status: Active
товару немає в наявності
В кошику
од. на суму грн.
AUIR3242BOARDUNIDIRTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: AUIR3242S BOARD UNIDIR
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AUIR3242S
Supplied Contents: Board(s)
Part Status: Obsolete
Description: AUIR3242S BOARD UNIDIR
Packaging: Bulk
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: AUIR3242S
Supplied Contents: Board(s)
Part Status: Obsolete
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 12315.15 грн |
AUIR3242SDEMOBOARDTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: AUIR3242S DEMOBOARD
Description: AUIR3242S DEMOBOARD
товару немає в наявності
В кошику
од. на суму грн.
IGW25T120 |
![]() |
Виробник: Infineon Technologies
Description: IGW25T120 - DISCRETE IGBT WITHOU
Description: IGW25T120 - DISCRETE IGBT WITHOU
товару немає в наявності
В кошику
од. на суму грн.
BAS12504WH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 25V 100MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 25 V
Description: DIODE ARR SCHOT 25V 100MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 25 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 16.56 грн |
6000+ | 14.68 грн |
9000+ | 14.03 грн |
BAS12504WH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 25V 100MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 25 V
Description: DIODE ARR SCHOT 25V 100MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: SOT-323
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 25 V
на замовлення 9535 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 68.44 грн |
10+ | 40.92 грн |
100+ | 26.64 грн |
500+ | 19.21 грн |
1000+ | 17.34 грн |
BAS12507WH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE ARR SCHOTT 25V SOT343-4-3
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SOT343-4-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 25 V
Description: DIODE ARR SCHOTT 25V SOT343-4-3
Packaging: Cut Tape (CT)
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SOT343-4-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 35 mA
Current - Reverse Leakage @ Vr: 150 nA @ 25 V
на замовлення 10214 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 53.32 грн |
10+ | 37.86 грн |
100+ | 30.30 грн |
500+ | 22.01 грн |
1000+ | 19.60 грн |
IRS2982STRPBF |
![]() |
Виробник: Infineon Technologies
Description: IC LED FLYBACK CTLR 8SOIC
Description: IC LED FLYBACK CTLR 8SOIC
товару немає в наявності
В кошику
од. на суму грн.
IRS2982STRPBF |
![]() |
Виробник: Infineon Technologies
Description: IC LED FLYBACK CTLR 8SOIC
Description: IC LED FLYBACK CTLR 8SOIC
на замовлення 609 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
IHW30N60T |
![]() |
Виробник: Infineon Technologies
Description: IHW30N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Description: IHW30N60 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: PG-TO247-3-21
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
товару немає в наявності
В кошику
од. на суму грн.
BAS4007WH6327 |
![]() |
Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 40V SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT343-4
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Description: DIODE ARR SCHOT 40V SOT343-4
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT343-4
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 8.71 грн |
BAS40-07WH6327 |
![]() |
Виробник: Infineon Technologies
Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT343-4
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Description: SCHOTTKY DIODE
Packaging: Bulk
Package / Case: SC-82A, SOT-343
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: PG-SOT343-4
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
BAS40-07E6327 |
![]() |
Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 40V 120MA SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT143 (SC-61)
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
Description: DIODE ARR SCHOT 40V 120MA SOT143
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 120mA (DC)
Supplier Device Package: SOT143 (SC-61)
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 1 µA @ 30 V
на замовлення 760249 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 8.71 грн |
IPU95R450P7AKMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 14A TO251-3
Description: MOSFET N-CH 950V 14A TO251-3
на замовлення 972 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 275.35 грн |
10+ | 238.41 грн |
100+ | 191.65 грн |
500+ | 147.76 грн |
IFX1763LDVXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LIN POS ADJ 500MA TSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.22V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Description: IC REG LIN POS ADJ 500MA TSON-10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 1.22V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
товару немає в наявності
В кошику
од. на суму грн.
IFX1763LDV33XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 500MA PG-TSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
Description: IC REG LIN 3.3V 500MA PG-TSON-10
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: PG-TSON-10
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Obsolete
PSRR: 65dB (120Hz)
Voltage Dropout (Max): 0.45V @ 500mA
Protection Features: Over Current, Over Temperature, Reverse Polarity
Current - Supply (Max): 31 mA
товару немає в наявності
В кошику
од. на суму грн.
IPA60R190C6 |
![]() |
Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
Description: POWER FIELD-EFFECT TRANSISTOR, 2
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 630µA
Supplier Device Package: PG-TO220-3-111
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 100 V
товару немає в наявності
В кошику
од. на суму грн.
TLE9461ESXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC SYST BASIS CHIP TSDSO-24-1
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: System Basis Chip (SBC)
Applications: CAN
Supplier Device Package: PG-TSDSO-24-1
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC SYST BASIS CHIP TSDSO-24-1
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Type: System Basis Chip (SBC)
Applications: CAN
Supplier Device Package: PG-TSDSO-24-1
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
на замовлення 9754 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 224.42 грн |
10+ | 162.08 грн |
25+ | 148.49 грн |
100+ | 125.35 грн |
250+ | 118.65 грн |
500+ | 114.62 грн |
1000+ | 109.48 грн |
2ED020I12FA |
Виробник: Infineon Technologies
Description: 2ED020 - GATE DRIVER
Packaging: Bulk
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-36
Rise / Fall Time (Typ): 30ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Current - Peak Output (Source, Sink): 2.4A, 2.4A
Part Status: Active
DigiKey Programmable: Not Verified
Description: 2ED020 - GATE DRIVER
Packaging: Bulk
Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 13V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 1200 V
Supplier Device Package: PG-DSO-36
Rise / Fall Time (Typ): 30ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 1.5V, 3.5V
Current - Peak Output (Source, Sink): 2.4A, 2.4A
Part Status: Active
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
IGW60T120 |
![]() |
Виробник: Infineon Technologies
Description: IGW60T120 - DISCRETE IGBT WITHOU
Description: IGW60T120 - DISCRETE IGBT WITHOU
товару немає в наявності
В кошику
од. на суму грн.
BAT165E6327 |
Виробник: Infineon Technologies
Description: BAT165 - RECTIFIER DIODE, SCHOTT
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Description: BAT165 - RECTIFIER DIODE, SCHOTT
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
товару немає в наявності
В кошику
од. на суму грн.
BAT165 |
Виробник: Infineon Technologies
Description: DIODE SCHOTT 40V 750MA SOD323-2
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Description: DIODE SCHOTT 40V 750MA SOD323-2
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Current - Average Rectified (Io): 750mA
Supplier Device Package: PG-SOD323-2
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
товару немає в наявності
В кошику
од. на суму грн.
REFICL5102U52WCCTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: EVAL KIT
Packaging: Bulk
Voltage - Output: 20V ~ 52V
Voltage - Input: 198 ~ 256 VAC
Utilized IC / Part: ICL5102
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
Description: EVAL KIT
Packaging: Bulk
Voltage - Output: 20V ~ 52V
Voltage - Input: 198 ~ 256 VAC
Utilized IC / Part: ICL5102
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
Part Status: Active
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 8508.00 грн |
IPP60R060P7 |
![]() |
Виробник: Infineon Technologies
Description: 600V, 0.06OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-3-123
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
Description: 600V, 0.06OHM, N-CHANNEL MOSFET,
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 15.9A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 4V @ 800µA
Supplier Device Package: PG-TO220-3-123
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2895 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
IKFW75N65EH5XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/206ns
Switching Energy: 1.8mJ (on), 600µJ (off)
Test Condition: 400V, 60A, 12Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/206ns
Switching Energy: 1.8mJ (on), 600µJ (off)
Test Condition: 400V, 60A, 12Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
на замовлення 38 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 757.61 грн |
30+ | 432.54 грн |
IKFW75N65ES5XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/152ns
Switching Energy: 1.48mJ (on), 660µJ (off)
Test Condition: 400V, 60A, 8Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
Description: IGBT TRENCH FS 650V 80A HSIP247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 71 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 60A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/152ns
Switching Energy: 1.48mJ (on), 660µJ (off)
Test Condition: 400V, 60A, 8Ohm, 15V
Gate Charge: 144 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 148 W
на замовлення 241 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 719.41 грн |
30+ | 409.17 грн |
120+ | 346.93 грн |
IKZ75N65NH5 |
![]() |
Виробник: Infineon Technologies
Description: IKZ75N65 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/412ns
Switching Energy: 880µJ (on), 520µJ (off)
Test Condition: 400V, 37.5A, 27Ohm, 15V
Gate Charge: 166 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
Description: IKZ75N65 - DISCRETE IGBT WITH AN
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 59 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: PG-TO247-4-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 52ns/412ns
Switching Energy: 880µJ (on), 520µJ (off)
Test Condition: 400V, 37.5A, 27Ohm, 15V
Gate Charge: 166 nC
Part Status: Active
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 395 W
товару немає в наявності
В кошику
од. на суму грн.
BSP50E6327 |
![]() |
Виробник: Infineon Technologies
Description: TRANS NPN DARL 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
Description: TRANS NPN DARL 45V 1A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 1mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: PG-SOT223-4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.5 W
товару немає в наявності
В кошику
од. на суму грн.
IAUC120N06S5L032ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TDSON-8-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 120A TDSON-8-34
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 38.27 грн |
IAUC120N06S5L032ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 120A TDSON-8-34
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 44µA
Supplier Device Package: PG-TDSON-8-34
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 51.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3823 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10270 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 108.23 грн |
10+ | 82.23 грн |
100+ | 58.81 грн |
500+ | 43.35 грн |
1000+ | 38.80 грн |
2000+ | 36.37 грн |
IPD040N03LG |
![]() |
Виробник: Infineon Technologies
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
Description: OPTLMOS N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
IPD40N03S4L08ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 40A TO252-31
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 40A TO252-31
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 40A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 15 V
Qualification: AEC-Q101
на замовлення 11282 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
395+ | 55.79 грн |
IPB240N03S4LR9ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 240A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 240A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.92mOhm @ 100A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 180µA
Supplier Device Package: PG-TO263-7-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20300 pF @ 25 V
Qualification: AEC-Q101
на замовлення 21485 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
112+ | 197.46 грн |
CY90911ASPMC-GS-111E1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
IRFR5505TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Description: MOSFET P-CH 55V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
IRFR5505TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Description: MOSFET P-CH 55V 18A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
HYB25L512160AC-7.5 |
![]() |
Виробник: Infineon Technologies
Description: IC DRAM 512MBIT PARALLEL 54FBGA
Packaging: Bulk
Package / Case: 54-LFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-FBGA (8x12)
Part Status: Active
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 32M x 16
Description: IC DRAM 512MBIT PARALLEL 54FBGA
Packaging: Bulk
Package / Case: 54-LFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-FBGA (8x12)
Part Status: Active
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 32M x 16
товару немає в наявності
В кошику
од. на суму грн.
HYB25L512160AC-7.5 REEL |
![]() |
Виробник: Infineon Technologies
Description: IC DRAM 512MBIT PARALLEL 54FBGA
Packaging: Bulk
Package / Case: 54-LFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-FBGA (8x12)
Part Status: Active
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 32M x 16
Description: IC DRAM 512MBIT PARALLEL 54FBGA
Packaging: Bulk
Package / Case: 54-LFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 2.3V ~ 3.6V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 133 MHz
Memory Format: DRAM
Supplier Device Package: 54-FBGA (8x12)
Part Status: Active
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Access Time: 6 ns
Memory Organization: 32M x 16
товару немає в наявності
В кошику
од. на суму грн.
IPB70N10S3L12ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 70A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
Description: MOSFET N-CH 100V 70A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1000+ | 87.69 грн |
IPB70N10S3L12ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 70A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
Description: MOSFET N-CH 100V 70A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.8mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
на замовлення 19969 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 261.03 грн |
10+ | 164.53 грн |
100+ | 115.03 грн |
500+ | 88.07 грн |
BSC070N10NS5SCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 14A/82A 8SWSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
Description: MOSFET N-CH 100V 14A/82A 8SWSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 82A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 50µA
Supplier Device Package: PG-WSON-8-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 67.73 грн |