Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (148596) > Сторінка 428 з 2477
Фото | Назва | Виробник | Інформація |
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IPD60R600PFD7SAUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V Power Dissipation (Max): 31W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 80µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V |
на замовлення 4694 шт: термін постачання 21-31 дні (днів) |
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PX3746DDQSM1383XUMA1 | Infineon Technologies |
Description: LED PX3746DDQSM1383XUMA1 Packaging: Tray Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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S25FL064P0XBHV020 | Infineon Technologies |
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на замовлення 338 шт: термін постачання 21-31 дні (днів) |
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IAUT165N08S5N029ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 165A (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 108µA Supplier Device Package: PG-HSOF-8-1 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SAF-XC164LM-16F20F BA | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 20MHz Program Memory Size: 128KB (128K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V Connectivity: SPI, UART/USART Peripherals: PWM, WDT Supplier Device Package: PG-LQFP-64-4 Number of I/O: 47 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SAF-XC164LM-16F40F BA | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
BTS5020-1EKA | Infineon Technologies |
![]() Features: Slew Rate Controlled Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 20mOhm Input Type: Non-Inverting Voltage - Load: 5V ~ 28V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 6.5A Ratio - Input:Output: 1:1 Supplier Device Package: PG-DSO-14-30 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IRF8714TRPBF-1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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DD261N20KHPSA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
ND261N20KHPSA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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ITS42K5DLDFXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 10-TFDFN Exposed Pad Output Type: P-Channel Mounting Type: Surface Mount, Wettable Flank Number of Outputs: 2 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: High Side Rds On (Typ): 2.5Ohm Input Type: Non-Inverting Voltage - Load: 4.5V ~ 42V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 250mA Ratio - Input:Output: 1:1 Supplier Device Package: PG-TSON-10-2 Fault Protection: Over Temperature, UVLO Part Status: Not For New Designs |
на замовлення 127501 шт: термін постачання 21-31 дні (днів) |
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TLE9877QTW40XUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 48-TQFP Exposed Pad Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 64KB (64K x 8) RAM Size: 6K x 8 Operating Temperature: -40°C ~ 175°C (TJ) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: ARM® Cortex®-M3 Data Converters: A/D 5x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V Connectivity: LINbus, SPI, SSC, UART/USART Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Grade: Automotive Part Status: Active Number of I/O: 10 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE9012AQUXUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Number of Cells: 12 Function: Battery Balancer Interface: UART |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR3742MTRPBF | Infineon Technologies |
![]() Features: Bootstrap Circuit, Status Flag Packaging: Tape & Reel (TR) Package / Case: 17-PowerVQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 7.5V Rds On (Typ): 4mOhm LS, 8mOhm HS Applications: Synchronous Buck Converters Current - Output / Channel: 20A Technology: Power MOSFET Voltage - Load: 1V ~ 21V Supplier Device Package: 17-PQFN (5x6) Fault Protection: Current Limiting, Over Temperature, UVLO Load Type: Inductive |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPD12CN10N | Infineon Technologies |
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на замовлення 3175 шт: термін постачання 21-31 дні (днів) |
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IPP12CN10LG | Infineon Technologies |
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на замовлення 1380 шт: термін постачання 21-31 дні (днів) |
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TLE9012AQUXUMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Number of Cells: 12 Function: Battery Balancer Interface: UART |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPTC014N08NM5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 230µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPTC014N08NM5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 230µA Supplier Device Package: PG-HDSOP-16-2 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IPB60R299CPAATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V Power Dissipation (Max): 96W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 440µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
SKW04N120FKSA1 | Infineon Technologies | Description: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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PBL38620/2SOA | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 24-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Function: Subscriber Line Interface Concept (SLIC) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5V Current - Supply: 2.8mA Supplier Device Package: PG-DSO-24-8 Number of Circuits: 1 Power (Watts): 290 mW |
на замовлення 1510 шт: термін постачання 21-31 дні (днів) |
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BAR6305WH6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - 1 Pair Common Cathode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SOT23 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BAR6702VH6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-SC79-2 Part Status: Active Current - Max: 200 mA Power Dissipation (Max): 250 mW |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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BAR6305E6327HTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - 1 Pair Common Cathode Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-SOT23 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BAR6704E6327HTSA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Diode Type: PIN - 1 Pair Series Connection Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 150V Supplier Device Package: PG-SOT23 Current - Max: 200 mA Power Dissipation (Max): 250 mW |
на замовлення 440107 шт: термін постачання 21-31 дні (днів) |
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BGA9C1MN9E6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 9-XFLGA Mounting Type: Surface Mount Frequency: 4.4GHz ~ 5GHz RF Type: 5G Voltage - Supply: 1.1V ~ 2V Gain: 20.5dB Current - Supply: 5.6mA Noise Figure: 1dB P1dB: 8dBm Test Frequency: 4.9GHz Supplier Device Package: PG-TSNP-9-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BGA9C1MN9E6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 9-XFLGA Mounting Type: Surface Mount Frequency: 4.4GHz ~ 5GHz RF Type: 5G Voltage - Supply: 1.1V ~ 2V Gain: 20.5dB Current - Supply: 5.6mA Noise Figure: 1dB P1dB: 8dBm Test Frequency: 4.9GHz Supplier Device Package: PG-TSNP-9-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BGA9V1MN9E6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 9-XFLGA Mounting Type: Surface Mount Frequency: 3.3GHz ~ 4.2GHz RF Type: 4G, 5G Voltage - Supply: 1.1V ~ 2V Gain: 22.5dB Current - Supply: 5.8mA Noise Figure: 0.75dB P1dB: 7dbm Test Frequency: 3.8GHz Supplier Device Package: PG-TSNP-9-6 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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BGA9V1MN9E6327XTSA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 9-XFLGA Mounting Type: Surface Mount Frequency: 3.3GHz ~ 4.2GHz RF Type: 4G, 5G Voltage - Supply: 1.1V ~ 2V Gain: 22.5dB Current - Supply: 5.8mA Noise Figure: 0.75dB P1dB: 7dbm Test Frequency: 3.8GHz Supplier Device Package: PG-TSNP-9-6 |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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BGA 915N7 E6327 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 6-XFDFN Exposed Pad Mounting Type: Surface Mount Frequency: 1575.42MHz RF Type: GPS Voltage - Supply: 1.5V ~ 3.6V Gain: 15.5dB Current - Supply: 4.4mA Noise Figure: 0.7dB P1dB: -5dBm Test Frequency: 1575.42MHz Supplier Device Package: PG-TSNP-7-6 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
F475R07W2H3B51BOMA1 | Infineon Technologies |
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на замовлення 180 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||||
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BAT1707E6327HTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-253-4, TO-253AA Diode Type: Schottky - 2 Independent Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz Resistance @ If, F: 15Ohm @ 5mA, 10kHz Voltage - Peak Reverse (Max): 4V Supplier Device Package: PG-SOT-143-3D Part Status: Active Current - Max: 130 mA Power Dissipation (Max): 150 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BAT5405WH6327XTSA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA (DC) Supplier Device Package: PG-SOT323 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 2 µA @ 25 V |
на замовлення 99000 шт: термін постачання 21-31 дні (днів) |
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IPG20N04S409ATMA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPG20N04S409ATMA1 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSC0925NDATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 15A Input Capacitance (Ciss) (Max) @ Vds: 1157pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TISON-8 Part Status: Active |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XMC1301-T038F0032AAXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 38-TFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 32KB (32K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: I²C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT Supplier Device Package: PG-TSSOP-38-9 Part Status: Active Number of I/O: 26 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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FP35R12W2T4PBPSA1 | Infineon Technologies |
![]() Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Three Phase Bridge Rectifier Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 20 mW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 2 nF @ 25 V |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
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TLI4971A025T5UE0001XUMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Polarization: Unidirectional Sensitivity: 48mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: DC ~ 240kHz Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 250ns Sensor Type: Hall Effect, Open Loop Linearity: ±2.25% For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 25A Supplier Device Package: PG-TISON-8-5 Part Status: Active Number of Channels: 1 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3178 шт: термін постачання 21-31 дні (днів) |
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BSL373SNH6327XTSA1 | Infineon Technologies |
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на замовлення 10614 шт: термін постачання 21-31 дні (днів) |
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IPD038N06N3G | Infineon Technologies | Description: IPD038N06N3G |
на замовлення 120 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||||
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BSZ096N10LS5ATMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 36µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BSZ096N10LS5ATMA1 | Infineon Technologies |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 36µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V |
на замовлення 5672 шт: термін постачання 21-31 дні (днів) |
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ICE5QR4770AZXKLA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DIP-7 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Not For New Designs Power (Watts): 27 W |
на замовлення 5926 шт: термін постачання 21-31 дні (днів) |
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ICE5QR4770AGXUMA1 | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: PG-DSO-12-21 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Not For New Designs Power (Watts): 27 W |
на замовлення 1046 шт: термін постачання 21-31 дні (днів) |
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ICE5QR2270AZ | Infineon Technologies |
![]() Packaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V Supplier Device Package: PG-DIP-7 Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Control Features: Frequency Control, Soft Start Part Status: Active Power (Watts): 41 W |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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PXDNGL01TOBO1 | Infineon Technologies |
Description: EVAL DONGLE Packaging: Bulk Type: License License - User Details: USB Dongle |
на замовлення 37 шт: термін постачання 21-31 дні (днів) |
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S27KL0641DABHA033 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 100 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Obsolete Memory Interface: Parallel Access Time: 40 ns Memory Organization: 8M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S27KL0641DABHI030 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 100 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Obsolete Memory Interface: Parallel Access Time: 40 ns Memory Organization: 8M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S27KL0641DABHA030 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 100 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Obsolete Memory Interface: Parallel Access Time: 40 ns Memory Organization: 8M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S27KL0641DABHB030 | Infineon Technologies |
![]() Packaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 100 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Part Status: Obsolete Memory Interface: Parallel Access Time: 40 ns Memory Organization: 8M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S70KL1281DABHI023 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S70KL1281DABHI020 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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S70KL1281DABHV020 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
TLE73683EXUMA2 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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IPP076N12N3G | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BAR6302LE6327XTMA1 | Infineon Technologies |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-882 Diode Type: PIN - Single Operating Temperature: 150°C (TJ) Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz Resistance @ If, F: 1Ohm @ 10mA, 100MHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: PG-TSLP-2-1 Part Status: Active Current - Max: 100 mA Power Dissipation (Max): 250 mW |
на замовлення 15000 шт: термін постачання 21-31 дні (днів) |
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S71KL256SC0BHB003 | Infineon Technologies |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
BSM100GD120DN2BDLA1 | Infineon Technologies |
Description: IGBT MODULE 1200V Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A NTC Thermistor: No Supplier Device Package: Module Part Status: Last Time Buy Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 680 W Current - Collector Cutoff (Max): 2 mA Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. |
IPD60R600PFD7SAUMA1 |
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Виробник: Infineon Technologies
Description: CONSUMER PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
Description: CONSUMER PG-TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 1.7A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 80µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
на замовлення 4694 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 104.79 грн |
10+ | 64.06 грн |
100+ | 42.51 грн |
500+ | 31.22 грн |
1000+ | 28.43 грн |
PX3746DDQSM1383XUMA1 |
Виробник: Infineon Technologies
Description: LED PX3746DDQSM1383XUMA1
Packaging: Tray
Part Status: Obsolete
Description: LED PX3746DDQSM1383XUMA1
Packaging: Tray
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
S25FL064P0XBHV020 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT 104MHZ 24BGA
Description: IC FLASH 64MBIT 104MHZ 24BGA
на замовлення 338 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
26+ | 106.29 грн |
IAUT165N08S5N029ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 165A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 165A 8HSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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од. на суму грн.
SAF-XC164LM-16F20F BA |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 47
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: SPI, UART/USART
Peripherals: PWM, WDT
Supplier Device Package: PG-LQFP-64-4
Number of I/O: 47
DigiKey Programmable: Not Verified
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SAF-XC164LM-16F40F BA |
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Виробник: Infineon Technologies
Description: IC MCU 16BIT 128KB FLASH 64LQFP
Description: IC MCU 16BIT 128KB FLASH 64LQFP
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BTS5020-1EKA |
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Виробник: Infineon Technologies
Description: BTS5020 - PROFET - SMART HIGH SI
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-30
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
Description: BTS5020 - PROFET - SMART HIGH SI
Features: Slew Rate Controlled
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 20mOhm
Input Type: Non-Inverting
Voltage - Load: 5V ~ 28V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 6.5A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-DSO-14-30
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage, Short Circuit, UVLO
Part Status: Active
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од. на суму грн.
IRF8714TRPBF-1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
Description: MOSFET N-CH 30V 14A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 15 V
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DD261N20KHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE MODULE GP 2000V 260A
Description: DIODE MODULE GP 2000V 260A
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ND261N20KHPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GP 2KV 260A BG-PB50ND-1
Description: DIODE GP 2KV 260A BG-PB50ND-1
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ITS42K5DLDFXUMA1 |
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Виробник: Infineon Technologies
Description: IC PWR SWITCH P-CHAN 1:1 TSON10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.5Ohm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-10-2
Fault Protection: Over Temperature, UVLO
Part Status: Not For New Designs
Description: IC PWR SWITCH P-CHAN 1:1 TSON10
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Output Type: P-Channel
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 2
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: High Side
Rds On (Typ): 2.5Ohm
Input Type: Non-Inverting
Voltage - Load: 4.5V ~ 42V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 250mA
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSON-10-2
Fault Protection: Over Temperature, UVLO
Part Status: Not For New Designs
на замовлення 127501 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 116.70 грн |
10+ | 82.26 грн |
25+ | 74.71 грн |
100+ | 62.34 грн |
250+ | 58.62 грн |
500+ | 56.39 грн |
1000+ | 53.65 грн |
2500+ | 51.73 грн |
TLE9877QTW40XUMA1 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 5x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Connectivity: LINbus, SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 64KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 175°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 5x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 5.5V ~ 27V
Connectivity: LINbus, SPI, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Grade: Automotive
Part Status: Active
Number of I/O: 10
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 258.28 грн |
TLE9012AQUXUMA1 |
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Виробник: Infineon Technologies
Description: IC BATT BALANCER 12CELL
Packaging: Cut Tape (CT)
Number of Cells: 12
Function: Battery Balancer
Interface: UART
Description: IC BATT BALANCER 12CELL
Packaging: Cut Tape (CT)
Number of Cells: 12
Function: Battery Balancer
Interface: UART
товару немає в наявності
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IR3742MTRPBF |
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Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 20A 17QFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 7.5V
Rds On (Typ): 4mOhm LS, 8mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 20A
Technology: Power MOSFET
Voltage - Load: 1V ~ 21V
Supplier Device Package: 17-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 20A 17QFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Package / Case: 17-PowerVQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 7.5V
Rds On (Typ): 4mOhm LS, 8mOhm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 20A
Technology: Power MOSFET
Voltage - Load: 1V ~ 21V
Supplier Device Package: 17-PQFN (5x6)
Fault Protection: Current Limiting, Over Temperature, UVLO
Load Type: Inductive
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од. на суму грн.
IPD12CN10N |
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Виробник: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Description: N-CHANNEL POWER MOSFET
на замовлення 3175 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
279+ | 81.49 грн |
IPP12CN10LG |
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Виробник: Infineon Technologies
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Description: POWER FIELD-EFFECT TRANSISTOR, 6
на замовлення 1380 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
512+ | 42.82 грн |
TLE9012AQUXUMA1 |
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Виробник: Infineon Technologies
Description: IC BATT BALANCER 12CELL
Packaging: Tape & Reel (TR)
Number of Cells: 12
Function: Battery Balancer
Interface: UART
Description: IC BATT BALANCER 12CELL
Packaging: Tape & Reel (TR)
Number of Cells: 12
Function: Battery Balancer
Interface: UART
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IPTC014N08NM5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 37A/330A HDSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Description: MOSFET N-CH 80V 37A/330A HDSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
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IPTC014N08NM5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 80V 37A/330A HDSOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Description: MOSFET N-CH 80V 37A/330A HDSOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HDSOP-16-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 445.37 грн |
10+ | 325.06 грн |
100+ | 246.95 грн |
500+ | 201.39 грн |
IPB60R299CPAATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 600V 11A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 600V 11A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6.6A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 440µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 100 V
Qualification: AEC-Q101
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SKW04N120FKSA1 |
Виробник: Infineon Technologies
Description: IGBT
Description: IGBT
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PBL38620/2SOA |
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Виробник: Infineon Technologies
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
Description: IC TELECOM INTERFACE PDSO-24
Packaging: Bulk
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: Subscriber Line Interface Concept (SLIC)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5V
Current - Supply: 2.8mA
Supplier Device Package: PG-DSO-24-8
Number of Circuits: 1
Power (Watts): 290 mW
на замовлення 1510 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
76+ | 300.45 грн |
BAR6305WH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.83 грн |
BAR6702VH6327XTSA1 |
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Виробник: Infineon Technologies
Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 150V 250MW SC79-2
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SC79-2
Part Status: Active
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 8.21 грн |
6000+ | 7.67 грн |
9000+ | 7.55 грн |
BAR6305E6327HTSA1 |
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Виробник: Infineon Technologies
Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 50V 250MW PG-SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Common Cathode
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-SOT23
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 8.71 грн |
BAR6704E6327HTSA1 |
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Виробник: Infineon Technologies
Description: RF DIODE PIN 150V 250MW PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 150V 250MW PG-SOT23
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - 1 Pair Series Connection
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.55pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 150V
Supplier Device Package: PG-SOT23
Current - Max: 200 mA
Power Dissipation (Max): 250 mW
на замовлення 440107 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3328+ | 6.81 грн |
BGA9C1MN9E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF AMP 5G 4.4GHZ-5GHZ TSNP9-6
Packaging: Tape & Reel (TR)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 4.4GHz ~ 5GHz
RF Type: 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 20.5dB
Current - Supply: 5.6mA
Noise Figure: 1dB
P1dB: 8dBm
Test Frequency: 4.9GHz
Supplier Device Package: PG-TSNP-9-6
Description: IC RF AMP 5G 4.4GHZ-5GHZ TSNP9-6
Packaging: Tape & Reel (TR)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 4.4GHz ~ 5GHz
RF Type: 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 20.5dB
Current - Supply: 5.6mA
Noise Figure: 1dB
P1dB: 8dBm
Test Frequency: 4.9GHz
Supplier Device Package: PG-TSNP-9-6
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BGA9C1MN9E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF AMP 5G 4.4GHZ-5GHZ TSNP9-6
Packaging: Cut Tape (CT)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 4.4GHz ~ 5GHz
RF Type: 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 20.5dB
Current - Supply: 5.6mA
Noise Figure: 1dB
P1dB: 8dBm
Test Frequency: 4.9GHz
Supplier Device Package: PG-TSNP-9-6
Description: IC RF AMP 5G 4.4GHZ-5GHZ TSNP9-6
Packaging: Cut Tape (CT)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 4.4GHz ~ 5GHz
RF Type: 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 20.5dB
Current - Supply: 5.6mA
Noise Figure: 1dB
P1dB: 8dBm
Test Frequency: 4.9GHz
Supplier Device Package: PG-TSNP-9-6
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BGA9V1MN9E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP 4G/5G 3.3-4.2GHZ TSNP9-6
Packaging: Tape & Reel (TR)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 22.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: 7dbm
Test Frequency: 3.8GHz
Supplier Device Package: PG-TSNP-9-6
Description: IC AMP 4G/5G 3.3-4.2GHZ TSNP9-6
Packaging: Tape & Reel (TR)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 22.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: 7dbm
Test Frequency: 3.8GHz
Supplier Device Package: PG-TSNP-9-6
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
12000+ | 37.23 грн |
BGA9V1MN9E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC AMP 4G/5G 3.3-4.2GHZ TSNP9-6
Packaging: Cut Tape (CT)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 22.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: 7dbm
Test Frequency: 3.8GHz
Supplier Device Package: PG-TSNP-9-6
Description: IC AMP 4G/5G 3.3-4.2GHZ TSNP9-6
Packaging: Cut Tape (CT)
Package / Case: 9-XFLGA
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 1.1V ~ 2V
Gain: 22.5dB
Current - Supply: 5.8mA
Noise Figure: 0.75dB
P1dB: 7dbm
Test Frequency: 3.8GHz
Supplier Device Package: PG-TSNP-9-6
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 84.15 грн |
10+ | 62.00 грн |
25+ | 55.78 грн |
100+ | 45.03 грн |
250+ | 41.07 грн |
500+ | 38.46 грн |
1000+ | 35.58 грн |
5000+ | 31.35 грн |
BGA 915N7 E6327 |
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Виробник: Infineon Technologies
Description: IC RF AMP GPS 1575.42MHZ TSNP7-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575.42MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.5dB
Current - Supply: 4.4mA
Noise Figure: 0.7dB
P1dB: -5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSNP-7-6
Description: IC RF AMP GPS 1575.42MHZ TSNP7-6
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 1575.42MHz
RF Type: GPS
Voltage - Supply: 1.5V ~ 3.6V
Gain: 15.5dB
Current - Supply: 4.4mA
Noise Figure: 0.7dB
P1dB: -5dBm
Test Frequency: 1575.42MHz
Supplier Device Package: PG-TSNP-7-6
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F475R07W2H3B51BOMA1 |
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Виробник: Infineon Technologies
Description: IGBT, 75A, 650V, N-CHANNEL
Description: IGBT, 75A, 650V, N-CHANNEL
на замовлення 180 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BAT1707E6327HTSA1 |
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Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 4V 150MW SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
Description: DIODE SCHOTTKY 4V 150MW SOT143-4
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Diode Type: Schottky - 2 Independent
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.75pF @ 0V, 1MHz
Resistance @ If, F: 15Ohm @ 5mA, 10kHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-SOT-143-3D
Part Status: Active
Current - Max: 130 mA
Power Dissipation (Max): 150 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 10.30 грн |
BAT5405WH6327XTSA1 |
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Виробник: Infineon Technologies
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Description: DIODE ARR SCHOT 30V 200MA SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: PG-SOT323
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
на замовлення 99000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.17 грн |
6000+ | 3.62 грн |
9000+ | 3.41 грн |
15000+ | 2.99 грн |
21000+ | 2.86 грн |
30000+ | 2.74 грн |
75000+ | 2.64 грн |
IPG20N04S409ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL_30/40V
Description: MOSFET N-CHANNEL_30/40V
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IPG20N04S409ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL_30/40V
Description: MOSFET N-CHANNEL_30/40V
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BSC0925NDATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 30V 15A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 1157pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
Description: MOSFET 2N-CH 30V 15A TISON8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A
Input Capacitance (Ciss) (Max) @ Vds: 1157pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TISON-8
Part Status: Active
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XMC1301-T038F0032AAXUMA1 |
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Виробник: Infineon Technologies
Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
Description: 32-BIT MCU XMC1000 ARM CORTEX-M0
Packaging: Bulk
Package / Case: 38-TFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I²C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I²S, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-38-9
Part Status: Active
Number of I/O: 26
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FP35R12W2T4PBPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 70A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
Description: IGBT MOD 1200V 70A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 5038.83 грн |
TLI4971A025T5UE0001XUMA1 |
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Виробник: Infineon Technologies
Description: SENSOR CURRENT HALL 25A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR CURRENT HALL 25A 8TISON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±2.25%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 25A
Supplier Device Package: PG-TISON-8-5
Part Status: Active
Number of Channels: 1
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3178 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2+ | 299.30 грн |
5+ | 251.21 грн |
10+ | 237.83 грн |
25+ | 208.66 грн |
50+ | 198.96 грн |
100+ | 190.30 грн |
500+ | 170.66 грн |
1000+ | 164.74 грн |
BSL373SNH6327XTSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 2A TSOP-6
Description: MOSFET N-CH 100V 2A TSOP-6
на замовлення 10614 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1731+ | 14.07 грн |
IPD038N06N3G |
Виробник: Infineon Technologies
Description: IPD038N06N3G
Description: IPD038N06N3G
на замовлення 120 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
BSZ096N10LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Description: MOSFET N-CH 100V 40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
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BSZ096N10LS5ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Description: MOSFET N-CH 100V 40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 20A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 36µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
на замовлення 5672 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3+ | 127.82 грн |
10+ | 87.69 грн |
100+ | 61.36 грн |
500+ | 50.68 грн |
1000+ | 49.03 грн |
ICE5QR4770AZXKLA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
на замовлення 5926 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
318+ | 69.37 грн |
ICE5QR4770AGXUMA1 |
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Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
Description: IC OFFLINE SWITCH FLYBACK 12DSO
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DSO-12-21
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Not For New Designs
Power (Watts): 27 W
на замовлення 1046 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
318+ | 69.37 грн |
ICE5QR2270AZ |
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Виробник: Infineon Technologies
Description: ICE5QR2270 - QUASI RESONANT COOL
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: Frequency Control, Soft Start
Part Status: Active
Power (Watts): 41 W
Description: ICE5QR2270 - QUASI RESONANT COOL
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 25.5V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: Frequency Control, Soft Start
Part Status: Active
Power (Watts): 41 W
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
228+ | 95.54 грн |
PXDNGL01TOBO1 |
Виробник: Infineon Technologies
Description: EVAL DONGLE
Packaging: Bulk
Type: License
License - User Details: USB Dongle
Description: EVAL DONGLE
Packaging: Bulk
Type: License
License - User Details: USB Dongle
на замовлення 37 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 4365.61 грн |
S27KL0641DABHA033 |
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Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
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S27KL0641DABHI030 |
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Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
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S27KL0641DABHA030 |
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Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
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S27KL0641DABHB030 |
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Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Part Status: Obsolete
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
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S70KL1281DABHI023 |
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Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
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S70KL1281DABHI020 |
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Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
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S70KL1281DABHV020 |
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Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
Description: IC PSRAM 128MBIT PARALLEL 24FBGA
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TLE73683EXUMA2 |
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Виробник: Infineon Technologies
Description: TLE7368 - OPTIREG PMIC (AUTOMOTI
Description: TLE7368 - OPTIREG PMIC (AUTOMOTI
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IPP076N12N3G |
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Виробник: Infineon Technologies
Description: IPP076N12 - 12V-300V N-CHANNEL P
Description: IPP076N12 - 12V-300V N-CHANNEL P
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BAR6302LE6327XTMA1 |
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Виробник: Infineon Technologies
Description: RF DIODE PIN 50V 250MW TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-TSLP-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
Description: RF DIODE PIN 50V 250MW TSLP-2
Packaging: Tape & Reel (TR)
Package / Case: SOD-882
Diode Type: PIN - Single
Operating Temperature: 150°C (TJ)
Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
Resistance @ If, F: 1Ohm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: PG-TSLP-2-1
Part Status: Active
Current - Max: 100 mA
Power Dissipation (Max): 250 mW
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
15000+ | 3.72 грн |
S71KL256SC0BHB003 |
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Виробник: Infineon Technologies
Description: IC FLASH RAM 256MBIT PAR 24FBGA
Description: IC FLASH RAM 256MBIT PAR 24FBGA
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BSM100GD120DN2BDLA1 |
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Description: IGBT MODULE 1200V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Module
Part Status: Last Time Buy
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 680 W
Current - Collector Cutoff (Max): 2 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
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