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CY8C3666LTI-201T CY8C3666LTI-201T Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C3665LTI-044T CY8C3665LTI-044T Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C3666LTI-203T CY8C3666LTI-203T Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C3666AXI-037T CY8C3666AXI-037T Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
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CY8C3666LTI-050T CY8C3666LTI-050T Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 64KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
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CY8C3865LTI-014T CY8C3865LTI-014T Infineon Technologies Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C3666LTI-027T CY8C3666LTI-027T Infineon Technologies #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88 Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C3865AXI-019T CY8C3865AXI-019T Infineon Technologies Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 8BIT 32KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
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CY8C3865LTI-014 CY8C3865LTI-014 Infineon Technologies Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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FZ2400R17KF6CB2S1NDSA1 Infineon Technologies fundamentals-of-power-semiconductors Description: IGBT MODULE 1700V 2400A
Packaging: Tray
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FZ1600R17KF6CB2S2NOSA1 Infineon Technologies Description: IGBT MODULE A-IHM130-1
Packaging: Tray
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IRFZ44VPBF IRFZ44VPBF Infineon Technologies IRSDS11299-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 55A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 31A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 25 V
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IR3892MTRPBF IR3892MTRPBF Infineon Technologies ir3892m.pdf?fileId=5546d462533600a4015355d5cbd7180d Description: IC REG BUCK ADJ 6A DL PQFN
Packaging: Tape & Reel (TR)
Package / Case: 31-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 31-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 0.5V
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CY62147DV30LL-70BVXA CY62147DV30LL-70BVXA Infineon Technologies CY62147DV30.pdf Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY62147DV30L-55BVXE CY62147DV30L-55BVXE Infineon Technologies CY62147DV30.pdf Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY62147DV30L-55ZSXE CY62147DV30L-55ZSXE Infineon Technologies CY62147DV30.pdf Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tube
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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IPS021S IPS021S Infineon Technologies IPS021%28S%29.pdf description Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature
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EVAL6EDL04I065PRTOBO1 EVAL6EDL04I065PRTOBO1 Infineon Technologies Description: EVAL6EDL04I065PRTOBO1
Packaging: Box
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BTG70013A1ESWDBTOBO1 BTG70013A1ESWDBTOBO1 Infineon Technologies Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_20-EN.pdf?fileId=5546d4626b2d8e69016bac9ebb6b24c7 Description: BTG70013A-1ESW DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG70013A-1ESW
Platform: Arduino
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+3794.72 грн
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IAUCN04S7N040DATMA1 IAUCN04S7N040DATMA1 Infineon Technologies Infineon-IAUCN04S7N040D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801918ebce4cb55ff Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 51W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V
Rds On (Max) @ Id, Vgs: 4.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: PG-TDSON-8-61
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7N040DATMA1 IAUCN04S7N040DATMA1 Infineon Technologies Infineon-IAUCN04S7N040D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801918ebce4cb55ff Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 51W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V
Rds On (Max) @ Id, Vgs: 4.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: PG-TDSON-8-61
Grade: Automotive
Qualification: AEC-Q101
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
3+129.44 грн
10+79.30 грн
100+52.81 грн
Мінімальне замовлення: 3
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CY7C1148KV18-400BZXC CY7C1148KV18-400BZXC Infineon Technologies download Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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IAUCN04S7L011ATMA1 IAUCN04S7L011ATMA1 Infineon Technologies Infineon-IAUCN04S7L011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ece8851a63 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tj)
Rds On (Max) @ Id, Vgs: 1.13mOhm @ 60A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 45µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
Qualification: AEC-Q101
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IAUCN04S7L011ATMA1 IAUCN04S7L011ATMA1 Infineon Technologies Infineon-IAUCN04S7L011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ece8851a63 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tj)
Rds On (Max) @ Id, Vgs: 1.13mOhm @ 60A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 45µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
Qualification: AEC-Q101
на замовлення 335 шт:
термін постачання 21-31 дні (днів)
3+134.55 грн
10+82.58 грн
100+55.53 грн
Мінімальне замовлення: 3
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IQFH55N04NM6ATMA1 IQFH55N04NM6ATMA1 Infineon Technologies Infineon-IQFH55N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e043cb2053d Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 451A (Tc)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1+364.48 грн
10+233.31 грн
100+166.15 грн
500+147.49 грн
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DF225R07W2S5PB97BPSA1 Infineon Technologies Description: EASY STANDARD
Packaging: Tray
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CY9AF315NAPF-G-JNE1 CY9AF315NAPF-G-JNE1 Infineon Technologies Infineon-CY9A310A_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede11f262e1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 384KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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IRLU3636PBF IRLU3636PBF Infineon Technologies IRSDS10828-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 50A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
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CY62177GE30-55ZXIT CY62177GE30-55ZXIT Infineon Technologies Infineon-CY62177G30_CY62177GE30_MoBL_32-Mbit_(2M_words_16-bit_4M_words_8-bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee97f1d725c Description: IC SRAM 32MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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CY62177GE30-55ZXI CY62177GE30-55ZXI Infineon Technologies Infineon-CY62177G30_CY62177GE30_MoBL_32-Mbit_(2M_words_16-bit_4M_words_8-bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee97f1d725c Description: IC SRAM 32MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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CY7C1382D-200AXC CY7C1382D-200AXC Infineon Technologies Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1370D-200AXC CY7C1370D-200AXC Infineon Technologies Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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FD200R12KE3PHOSA1 FD200R12KE3PHOSA1 Infineon Technologies Infineon-FD200R12KE3P-DS-v02_00-EN.pdf?fileId=5546d46253e9fadc0153efbccd9b3c14 Description: IGBT MODULE 1200V 200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
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D2000U65X122XPSA1 D2000U65X122XPSA1 Infineon Technologies Description: HIGH POWER THYR / DIO
Packaging: Tray
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BGT24ATR22E6433XUMA1 BGT24ATR22E6433XUMA1 Infineon Technologies Description: BGT24ATR22E6433XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: VCO
Frequency: 24GHz ~ 24.25GHz
RF Type: Radar
Secondary Attributes: ADC
Supplier Device Package: PG-VQFN-32-9
Grade: Automotive
Qualification: AEC-Q100
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BGT24ATR22E6433XUMA1 BGT24ATR22E6433XUMA1 Infineon Technologies Description: BGT24ATR22E6433XUMA1
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: VCO
Frequency: 24GHz ~ 24.25GHz
RF Type: Radar
Secondary Attributes: ADC
Supplier Device Package: PG-VQFN-32-9
Grade: Automotive
Qualification: AEC-Q100
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
1+980.19 грн
10+716.81 грн
25+659.92 грн
100+560.61 грн
250+532.62 грн
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TLE9274QXV33XUMA2 TLE9274QXV33XUMA2 Infineon Technologies Infineon-TLE9274QX%20V33-DataSheet-v02_00-EN.pdf?fileId=5546d4627762291e01776d6101847b85 Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Converter, Automotive
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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CY241V8ASXC-12 CY241V8ASXC-12 Infineon Technologies CY241V08A-12.pdf Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 74.25MHz
Type: Clock Generator, Fanout Distribution
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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EVALCO25VMINIBOARDTOBO1 EVALCO25VMINIBOARDTOBO1 Infineon Technologies Infineon-User_manual_EVAL_CO2_5V_MINIBOARD-UserManual-v01_02-EN.pdf?fileId=8ac78c8c8d2fe47b018df40eb06f7004 Description: EVAL BOARD
Packaging: Box
Sensitivity: ±3%
Interface: I2C, PWM, UART
Contents: Board(s)
Voltage - Supply: 3.3V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
1+1598.45 грн
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EVALCO25VSENSOR2GOTOBO1 EVALCO25VSENSOR2GOTOBO1 Infineon Technologies Infineon-Quickstart_guide_PAS_CO2_Sensor2Go_eval-UserManual-v01_03-EN.pdf?fileId=8ac78c8c8d2fe47b018ded80a4b76bcf Description: EVAL BOARD
Packaging: Box
Sensitivity: ±3%
Interface: I2C, PWM, UART
Contents: Board(s)
Voltage - Supply: 3.3V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
1+2628.03 грн
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PASCO2V15AUMA1 PASCO2V15AUMA1 Infineon Technologies infineon-pasco2v15-datasheet-en.pdf?fileId=8ac78c8c914a3ac8019179fecd0c351d Description: PASCO2V15AUMA1
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±5%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 4.45V ~ 5.5V
Oxygen Range: 0 mbar ~ 800 bar
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
300+981.58 грн
Мінімальне замовлення: 300
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PASCO2V15AUMA1 PASCO2V15AUMA1 Infineon Technologies infineon-pasco2v15-datasheet-en.pdf?fileId=8ac78c8c914a3ac8019179fecd0c351d Description: PASCO2V15AUMA1
Packaging: Cut Tape (CT)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±5%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 4.45V ~ 5.5V
Oxygen Range: 0 mbar ~ 800 bar
на замовлення 395 шт:
термін постачання 21-31 дні (днів)
1+1304.65 грн
5+1145.29 грн
10+1103.88 грн
25+989.42 грн
50+966.13 грн
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PASCO2V01AUMA3 PASCO2V01AUMA3 Infineon Technologies Infineon-PASCO2V01-DataSheet-v01_70-EN.pdf?fileId=8ac78c8c80027ecd01809278f1af1ba2 Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±3%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 10.8V ~ 13.2V
Oxygen Range: 0 mbar ~ 800 bar
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PASCO2V11AUMA1 Infineon Technologies Description: SENSOR ENVIRONMENTAL
Packaging: Tape & Reel (TR)
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PASCO2V01AUMA2 PASCO2V01AUMA2 Infineon Technologies Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Operating Temperature: 0°C ~ 50°C (TA)
Voltage - Supply: 3V ~ 3.6V, 10.8V ~ 13.2V
Current - Supply: 800µA, 6.1mA
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4DIR1420HAXUMA1 4DIR1420HAXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxHA_family-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d01899cd5eb0a5610 Description: DIGITAL ISOLATORS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
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4DIR1420HAXUMA1 4DIR1420HAXUMA1 Infineon Technologies Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxHA_family-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d01899cd5eb0a5610 Description: DIGITAL ISOLATORS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1486 шт:
термін постачання 21-31 дні (днів)
2+210.34 грн
10+135.23 грн
100+104.05 грн
500+88.27 грн
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PEB22320NV2.1 Infineon Technologies Description: CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 415 шт:
термін постачання 21-31 дні (днів)
16+1516.80 грн
Мінімальне замовлення: 16
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CY4603 CY4603 Infineon Technologies Infineon-CY4603_HX3_USB_3.0_Hub_Development_Kit_(DVK)_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef8e51d0e82&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: EVAL BOARD HX3 USB HUB CYUSB3314
Packaging: Box
Function: USB 3.0 Hub
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CYUSB3314
Primary Attributes: 4-Channel (Quad)
Secondary Attributes: I2C Interface(s)
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+7678.02 грн
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BGSX24MU16E6327XTSA1 Infineon Technologies Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Features: DC Blocked
Packaging: Tape & Reel (TR)
Package / Case: 16-UFLGA Exposed Pad
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, WCDMA
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Topology: Reflective
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
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S29GL064N90FAI040 S29GL064N90FAI040 Infineon Technologies Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S29GL064N90FFIS10 S29GL064N90FFIS10 Infineon Technologies Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S29GL064N90FFA040 S29GL064N90FFA040 Infineon Technologies S29GL064N_032N_RevB_5-26-17.pdf Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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DD380N22KXPSA1 DD380N22KXPSA1 Infineon Technologies Infineon-DD380N22K-DataSheet-v03_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d5f08cc4e379e Description: DIODE MOD GP 2200V 393A BGPB50AT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 393A
Supplier Device Package: BG-PB50AT-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+15057.12 грн
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DD380N22KOFXPSA1 DD380N22KOFXPSA1 Infineon Technologies Infineon-DD380N22K-DataSheet-v03_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d5f08cc4e379e Description: DIODE MOD GP 2200V 393A BGPB50AT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 393A
Supplier Device Package: BG-PB50AT-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+15057.12 грн
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DD360N22KHPSA1 DD360N22KHPSA1 Infineon Technologies Infineon-DD360N22K-DS-v03_02-en_de.pdf?fileId=5546d461464245d301465bd363e470f5 Description: BRIDGE RECT 1P 2.2KV 360A PB50AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: BG-PB50AT-1
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 360 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
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PSB2134HV2.2 PSB2134HV2.2 Infineon Technologies psb213x.pdf Description: SICOFI-TE FOUR CH CODEC FILTER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: CODEC Filter
Interface: IOM-2 PCM, SPI
Voltage - Supply: 5V
Current - Supply: 26mA
Supplier Device Package: P-MQFP-64
Number of Circuits: 4
Power (Watts): 130 mW
на замовлення 5617 шт:
термін постачання 21-31 дні (днів)
33+698.36 грн
Мінімальне замовлення: 33
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PSB2134HV1.4GD PSB2134HV1.4GD Infineon Technologies Description: SICOFI-TE FOUR CH CODEC FILTER
Packaging: Bulk
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
31+758.77 грн
Мінімальне замовлення: 31
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IPB65R225C7ATMA2 IPB65R225C7ATMA2 Infineon Technologies Infineon-IPB65R225C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e7921c0d800bc Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
на замовлення 868 шт:
термін постачання 21-31 дні (днів)
2+244.41 грн
10+153.43 грн
100+106.60 грн
500+81.21 грн
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IMT40R015M2HXTMA1 IMT40R015M2HXTMA1 Infineon Technologies Infineon-IMT40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933 Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
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CY8C3666LTI-201T #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3666LTI-201T
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C3665LTI-044T #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3665LTI-044T
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C3666LTI-203T #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3666LTI-203T
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C3666AXI-037T #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3666AXI-037T
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
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CY8C3666LTI-050T #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3666LTI-050T
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 25
DigiKey Programmable: Not Verified
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CY8C3865LTI-014T Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C3865LTI-014T
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C3666LTI-027T #!?fileId=8ac78c8c7d0d8da4017d0ec73d263e88
CY8C3666LTI-027T
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x12b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C3865AXI-019T Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C3865AXI-019T
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 62
DigiKey Programmable: Not Verified
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CY8C3865LTI-014 Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C3865LTI-014
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 1K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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FZ2400R17KF6CB2S1NDSA1 fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 2400A
Packaging: Tray
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FZ1600R17KF6CB2S2NOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE A-IHM130-1
Packaging: Tray
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IRFZ44VPBF IRSDS11299-1.pdf?t.download=true&u=5oefqw
IRFZ44VPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 55A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 31A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1812 pF @ 25 V
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IR3892MTRPBF ir3892m.pdf?fileId=5546d462533600a4015355d5cbd7180d
IR3892MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 6A DL PQFN
Packaging: Tape & Reel (TR)
Package / Case: 31-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 300kHz ~ 1MHz
Voltage - Input (Max): 21V
Topology: Buck
Supplier Device Package: 31-PQFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 18.06V
Voltage - Input (Min): 1V
Voltage - Output (Min/Fixed): 0.5V
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CY62147DV30LL-70BVXA CY62147DV30.pdf
CY62147DV30LL-70BVXA
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY62147DV30L-55BVXE CY62147DV30.pdf
CY62147DV30L-55BVXE
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY62147DV30L-55ZSXE CY62147DV30.pdf
CY62147DV30L-55ZSXE
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tube
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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IPS021S description IPS021%28S%29.pdf
IPS021S
Виробник: Infineon Technologies
Description: IC PWR SWITCH N-CHAN 1:1 D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Low Side
Rds On (Typ): 130mOhm
Input Type: Non-Inverting
Voltage - Load: 35V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.8A
Ratio - Input:Output: 1:1
Supplier Device Package: D2PAK
Fault Protection: Current Limiting (Fixed), Over Temperature
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EVAL6EDL04I065PRTOBO1
EVAL6EDL04I065PRTOBO1
Виробник: Infineon Technologies
Description: EVAL6EDL04I065PRTOBO1
Packaging: Box
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BTG70013A1ESWDBTOBO1 Infineon-PROFET_Customer_evaluation_kit_description-UserManual-v01_20-EN.pdf?fileId=5546d4626b2d8e69016bac9ebb6b24c7
BTG70013A1ESWDBTOBO1
Виробник: Infineon Technologies
Description: BTG70013A-1ESW DB
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTG70013A-1ESW
Platform: Arduino
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3794.72 грн
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IAUCN04S7N040DATMA1 Infineon-IAUCN04S7N040D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801918ebce4cb55ff
IAUCN04S7N040DATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 51W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V
Rds On (Max) @ Id, Vgs: 4.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: PG-TDSON-8-61
Grade: Automotive
Qualification: AEC-Q101
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IAUCN04S7N040DATMA1 Infineon-IAUCN04S7N040D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801918ebce4cb55ff
IAUCN04S7N040DATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 51W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 82A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 1177pF @ 20V
Rds On (Max) @ Id, Vgs: 4.04mOhm @ 30A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 15µA
Supplier Device Package: PG-TDSON-8-61
Grade: Automotive
Qualification: AEC-Q101
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+129.44 грн
10+79.30 грн
100+52.81 грн
Мінімальне замовлення: 3
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CY7C1148KV18-400BZXC download
CY7C1148KV18-400BZXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II+
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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IAUCN04S7L011ATMA1 Infineon-IAUCN04S7L011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ece8851a63
IAUCN04S7L011ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tj)
Rds On (Max) @ Id, Vgs: 1.13mOhm @ 60A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 45µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
Qualification: AEC-Q101
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IAUCN04S7L011ATMA1 Infineon-IAUCN04S7L011-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ece8851a63
IAUCN04S7L011ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 222A (Tj)
Rds On (Max) @ Id, Vgs: 1.13mOhm @ 60A, 10V
Power Dissipation (Max): 105W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 45µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4240 pF @ 20 V
Qualification: AEC-Q101
на замовлення 335 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+134.55 грн
10+82.58 грн
100+55.53 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IQFH55N04NM6ATMA1 Infineon-IQFH55N04NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e043cb2053d
IQFH55N04NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Ta), 451A (Tc)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1.05mA
Supplier Device Package: PG-TSON-12-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 20 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+364.48 грн
10+233.31 грн
100+166.15 грн
500+147.49 грн
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DF225R07W2S5PB97BPSA1
Виробник: Infineon Technologies
Description: EASY STANDARD
Packaging: Tray
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CY9AF315NAPF-G-JNE1 Infineon-CY9A310A_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede11f262e1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AF315NAPF-G-JNE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 384KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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IRLU3636PBF IRSDS10828-1.pdf?t.download=true&u=5oefqw
IRLU3636PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 50A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 50A, 10V
Power Dissipation (Max): 143W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3779 pF @ 50 V
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CY62177GE30-55ZXIT Infineon-CY62177G30_CY62177GE30_MoBL_32-Mbit_(2M_words_16-bit_4M_words_8-bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee97f1d725c
CY62177GE30-55ZXIT
Виробник: Infineon Technologies
Description: IC SRAM 32MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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CY62177GE30-55ZXI Infineon-CY62177G30_CY62177GE30_MoBL_32-Mbit_(2M_words_16-bit_4M_words_8-bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee97f1d725c
CY62177GE30-55ZXI
Виробник: Infineon Technologies
Description: IC SRAM 32MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 32Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 16
DigiKey Programmable: Not Verified
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CY7C1382D-200AXC
CY7C1382D-200AXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1370D-200AXC
CY7C1370D-200AXC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
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FD200R12KE3PHOSA1 Infineon-FD200R12KE3P-DS-v02_00-EN.pdf?fileId=5546d46253e9fadc0153efbccd9b3c14
FD200R12KE3PHOSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 1200V 200A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 14 nF @ 25 V
товару немає в наявності
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D2000U65X122XPSA1
D2000U65X122XPSA1
Виробник: Infineon Technologies
Description: HIGH POWER THYR / DIO
Packaging: Tray
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BGT24ATR22E6433XUMA1
BGT24ATR22E6433XUMA1
Виробник: Infineon Technologies
Description: BGT24ATR22E6433XUMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: VCO
Frequency: 24GHz ~ 24.25GHz
RF Type: Radar
Secondary Attributes: ADC
Supplier Device Package: PG-VQFN-32-9
Grade: Automotive
Qualification: AEC-Q100
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BGT24ATR22E6433XUMA1
BGT24ATR22E6433XUMA1
Виробник: Infineon Technologies
Description: BGT24ATR22E6433XUMA1
Packaging: Cut Tape (CT)
Package / Case: 32-PowerVFQFN
Mounting Type: Surface Mount
Function: VCO
Frequency: 24GHz ~ 24.25GHz
RF Type: Radar
Secondary Attributes: ADC
Supplier Device Package: PG-VQFN-32-9
Grade: Automotive
Qualification: AEC-Q100
на замовлення 296 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+980.19 грн
10+716.81 грн
25+659.92 грн
100+560.61 грн
250+532.62 грн
В кошику  од. на суму  грн.
TLE9274QXV33XUMA2 Infineon-TLE9274QX%20V33-DataSheet-v02_00-EN.pdf?fileId=5546d4627762291e01776d6101847b85
TLE9274QXV33XUMA2
Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 4.5V ~ 28V
Operating Temperature: -40°C ~ 150°C (TJ)
Applications: Converter, Automotive
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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CY241V8ASXC-12 CY241V08A-12.pdf
CY241V8ASXC-12
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: Clock
Frequency - Max: 74.25MHz
Type: Clock Generator, Fanout Distribution
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:2
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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EVALCO25VMINIBOARDTOBO1 Infineon-User_manual_EVAL_CO2_5V_MINIBOARD-UserManual-v01_02-EN.pdf?fileId=8ac78c8c8d2fe47b018df40eb06f7004
EVALCO25VMINIBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD
Packaging: Box
Sensitivity: ±3%
Interface: I2C, PWM, UART
Contents: Board(s)
Voltage - Supply: 3.3V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
на замовлення 26 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1598.45 грн
В кошику  од. на суму  грн.
EVALCO25VSENSOR2GOTOBO1 Infineon-Quickstart_guide_PAS_CO2_Sensor2Go_eval-UserManual-v01_03-EN.pdf?fileId=8ac78c8c8d2fe47b018ded80a4b76bcf
EVALCO25VSENSOR2GOTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD
Packaging: Box
Sensitivity: ±3%
Interface: I2C, PWM, UART
Contents: Board(s)
Voltage - Supply: 3.3V
Sensor Type: Carbon Dioxide (CO2)
Utilized IC / Part: PAS CO2
Supplied Contents: Board(s)
Embedded: Yes, MCU
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2628.03 грн
В кошику  од. на суму  грн.
PASCO2V15AUMA1 infineon-pasco2v15-datasheet-en.pdf?fileId=8ac78c8c914a3ac8019179fecd0c351d
PASCO2V15AUMA1
Виробник: Infineon Technologies
Description: PASCO2V15AUMA1
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±5%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 4.45V ~ 5.5V
Oxygen Range: 0 mbar ~ 800 bar
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
300+981.58 грн
Мінімальне замовлення: 300
В кошику  од. на суму  грн.
PASCO2V15AUMA1 infineon-pasco2v15-datasheet-en.pdf?fileId=8ac78c8c914a3ac8019179fecd0c351d
PASCO2V15AUMA1
Виробник: Infineon Technologies
Description: PASCO2V15AUMA1
Packaging: Cut Tape (CT)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±5%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 4.45V ~ 5.5V
Oxygen Range: 0 mbar ~ 800 bar
на замовлення 395 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1304.65 грн
5+1145.29 грн
10+1103.88 грн
25+989.42 грн
50+966.13 грн
В кошику  од. на суму  грн.
PASCO2V01AUMA3 Infineon-PASCO2V01-DataSheet-v01_70-EN.pdf?fileId=8ac78c8c80027ecd01809278f1af1ba2
PASCO2V01AUMA3
Виробник: Infineon Technologies
Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Accuracy: ±3%
Operating Temperature: 0°C ~ 50°C
Voltage - Supply: 10.8V ~ 13.2V
Oxygen Range: 0 mbar ~ 800 bar
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PASCO2V11AUMA1
Виробник: Infineon Technologies
Description: SENSOR ENVIRONMENTAL
Packaging: Tape & Reel (TR)
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PASCO2V01AUMA2
PASCO2V01AUMA2
Виробник: Infineon Technologies
Description: SENSOR CARBON DIOXIDE I2C OUTPUT
Packaging: Tape & Reel (TR)
Output: I2C, PWM, UART
Type: Carbon Dioxide (CO2)
Operating Temperature: 0°C ~ 50°C (TA)
Voltage - Supply: 3V ~ 3.6V, 10.8V ~ 13.2V
Current - Supply: 800µA, 6.1mA
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4DIR1420HAXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxHA_family-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d01899cd5eb0a5610
4DIR1420HAXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISOLATORS
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
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4DIR1420HAXUMA1 Infineon-Datasheet_ISOFACE(TM)_4DIRx4xxHA_family-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d01899cd5eb0a5610
4DIR1420HAXUMA1
Виробник: Infineon Technologies
Description: DIGITAL ISOLATORS
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Type: SPI
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2.7V ~ 6.5V
Data Rate: 40Mbps
Technology: Magnetic Coupling
Voltage - Isolation: 5700Vrms
Inputs - Side 1/Side 2: 3/1
Supplier Device Package: PG-DSO-16-46
Rise / Fall Time (Typ): 4ns, 4ns (Max)
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 33ns, 33ns
Isolated Power: Yes
Channel Type: Unidirectional
Pulse Width Distortion (Max): 3ns
Grade: Automotive
Number of Channels: 4
Qualification: AEC-Q100
на замовлення 1486 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+210.34 грн
10+135.23 грн
100+104.05 грн
500+88.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PEB22320NV2.1
Виробник: Infineon Technologies
Description: CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
на замовлення 415 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+1516.80 грн
Мінімальне замовлення: 16
В кошику  од. на суму  грн.
CY4603 Infineon-CY4603_HX3_USB_3.0_Hub_Development_Kit_(DVK)_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef8e51d0e82&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CY4603
Виробник: Infineon Technologies
Description: EVAL BOARD HX3 USB HUB CYUSB3314
Packaging: Box
Function: USB 3.0 Hub
Type: Interface
Contents: Board(s), Cable(s), Power Supply
Utilized IC / Part: CYUSB3314
Primary Attributes: 4-Channel (Quad)
Secondary Attributes: I2C Interface(s)
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7678.02 грн
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BGSX24MU16E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Features: DC Blocked
Packaging: Tape & Reel (TR)
Package / Case: 16-UFLGA Exposed Pad
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, WCDMA
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Topology: Reflective
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
товару немає в наявності
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S29GL064N90FAI040 Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29GL064N90FAI040
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S29GL064N90FFIS10
S29GL064N90FFIS10
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S29GL064N90FFA040 S29GL064N_032N_RevB_5-26-17.pdf
S29GL064N90FFA040
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Grade: Automotive
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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DD380N22KXPSA1 Infineon-DD380N22K-DataSheet-v03_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d5f08cc4e379e
DD380N22KXPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 2200V 393A BGPB50AT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 393A
Supplier Device Package: BG-PB50AT-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+15057.12 грн
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DD380N22KOFXPSA1 Infineon-DD380N22K-DataSheet-v03_01-EN.pdf?fileId=8ac78c8c8d2fe47b018d5f08cc4e379e
DD380N22KOFXPSA1
Виробник: Infineon Technologies
Description: DIODE MOD GP 2200V 393A BGPB50AT
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 393A
Supplier Device Package: BG-PB50AT-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.16 V @ 800 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+15057.12 грн
В кошику  од. на суму  грн.
DD360N22KHPSA1 Infineon-DD360N22K-DS-v03_02-en_de.pdf?fileId=5546d461464245d301465bd363e470f5
DD360N22KHPSA1
Виробник: Infineon Technologies
Description: BRIDGE RECT 1P 2.2KV 360A PB50AT
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: 150°C (TJ)
Technology: Standard
Supplier Device Package: BG-PB50AT-1
Voltage - Peak Reverse (Max): 2.2 kV
Current - Average Rectified (Io): 360 A
Current - Reverse Leakage @ Vr: 25 mA @ 2200 V
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PSB2134HV2.2 psb213x.pdf
PSB2134HV2.2
Виробник: Infineon Technologies
Description: SICOFI-TE FOUR CH CODEC FILTER
Packaging: Bulk
Package / Case: 64-QFP
Mounting Type: Surface Mount
Function: CODEC Filter
Interface: IOM-2 PCM, SPI
Voltage - Supply: 5V
Current - Supply: 26mA
Supplier Device Package: P-MQFP-64
Number of Circuits: 4
Power (Watts): 130 mW
на замовлення 5617 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
33+698.36 грн
Мінімальне замовлення: 33
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PSB2134HV1.4GD
PSB2134HV1.4GD
Виробник: Infineon Technologies
Description: SICOFI-TE FOUR CH CODEC FILTER
Packaging: Bulk
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
31+758.77 грн
Мінімальне замовлення: 31
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IPB65R225C7ATMA2 Infineon-IPB65R225C7-DS-v02_00-en.pdf?fileId=db3a30433e78ea82013e7921c0d800bc
IPB65R225C7ATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
на замовлення 868 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+244.41 грн
10+153.43 грн
100+106.60 грн
500+81.21 грн
Мінімальне замовлення: 2
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IMT40R015M2HXTMA1 Infineon-IMT40R015M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933
IMT40R015M2HXTMA1
Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta), 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 200 V
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