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S29GL01GS10FAI013 S29GL01GS10FAI013 Infineon Technologies S29GL-S_PbPkg.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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CY8CLED04D02-56LTXI CY8CLED04D02-56LTXI Infineon Technologies CY8CLED0x%28D%2CG%290x.pdf Description: IC MCU 8BIT 16KB FLASH 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 14
DigiKey Programmable: Not Verified
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TD500N18KOFXPSA1 Infineon Technologies Infineon-TT500N-DataSheet-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.8 kV
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TT500N16KOFXPSA1 Infineon Technologies Infineon-TT500N-DataSheet-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
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TT500N18KOFHPSA2 TT500N18KOFHPSA2 Infineon Technologies Infineon-TT500N-DS-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d Description: SCR MODULE 1.8KV 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.8 kV
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S6E2G26HHAGV2000A S6E2G26HHAGV2000A Infineon Technologies Description: IC MCU 32BIT 512KB 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SmartCard, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 153
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XDPS21071XUMA1 XDPS21071XUMA1 Infineon Technologies Infineon-XDPS21071-DataSheet-v01_00-EN.pdf?fileId=5546d4626e41e490016e632b3d382b14 Description: DIGITAL FFR CONTROLLER, DSO12
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 24.9kHz ~ 139.4kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
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IRGP4660DPBF IRGP4660DPBF Infineon Technologies irgp4660dpbf.pdf?fileId=5546d462533600a40153565680d52478 Description: IGBT 600V 100A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
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IRF7452PBF IRF7452PBF Infineon Technologies irf7452pbf.pdf?fileId=5546d462533600a4015355fb43911be6 Description: MOSFET N-CH 100V 4.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
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S6E2C5AL0AGL2000A S6E2C5AL0AGL2000A Infineon Technologies download Description: IC MCU 32BIT 2MB FLASH 216LQFP
Packaging: Tray
Package / Case: 216-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-LQFP (24x24)
Number of I/O: 190
DigiKey Programmable: Not Verified
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S6E2CC8J0AGB1000A S6E2CC8J0AGB1000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S6E2CC8H0AGV2000A S6E2CC8H0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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S6E2C5AJ0AGV2000A S6E2C5AJ0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S6E2CC8L0AGL2000A S6E2CC8L0AGL2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 216LQFP
Packaging: Tray
Package / Case: 216-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-LQFP (24x24)
Number of I/O: 190
DigiKey Programmable: Not Verified
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S6E2CC9H0AGV2000A S6E2CC9H0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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98-0265PBF Infineon Technologies fundamentals-of-power-semiconductors Description: IC CONTROLLER PFC/BALLAST 16DIP
Packaging: Tube
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IR3477MTRPBF IR3477MTRPBF Infineon Technologies ir3477m.pdf?fileId=5546d462533600a4015355ccc110172d Description: IC REG BUCK ADJ 15A 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 750kHz
Voltage - Input (Max): 27V
Topology: Buck
Supplier Device Package: 16-QFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.5V
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S6E2C48H0AGV2000A S6E2C48H0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
1+1491.45 грн
10+1154.41 грн
60+1081.01 грн
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S6E2C3AL0AGL2000A S6E2C3AL0AGL2000A Infineon Technologies download Description: IC MCU 32BIT 2MB FLASH 216LQFP
Packaging: Tray
Package / Case: 216-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-LQFP (24x24)
Number of I/O: 190
DigiKey Programmable: Not Verified
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S6E2C48J0AGB1000A S6E2C48J0AGB1000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S6E2C48J0AGV2000A S6E2C48J0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S99-50572 Infineon Technologies Description: IC FLASH
Packaging: Bulk
Memory Format: FLASH
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S99-50539 Infineon Technologies Description: INFINEON
Packaging: Bulk
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S99-50540 Infineon Technologies Description: INFINEON
Packaging: Bulk
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FF650R17IE4PB60BPSA1 Infineon Technologies Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 930 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
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FF1000R17IE4PB60BPSA1 Infineon Technologies Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
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IRFHM4234TRPBF IRFHM4234TRPBF Infineon Technologies irfhm4234pbf.pdf?fileId=5546d462533600a4015356200a4c1f31 Description: MOSFET N-CH 25V 20A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
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IRFHM4234TRPBF IRFHM4234TRPBF Infineon Technologies irfhm4234pbf.pdf?fileId=5546d462533600a4015356200a4c1f31 Description: MOSFET N-CH 25V 20A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
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IRF6797MTRPBF IRF6797MTRPBF Infineon Technologies irf6797mpbf.pdf?fileId=5546d462533600a4015355eda2091aa9 Description: MOSFET N-CH 25V 36A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 38A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 13 V
товару немає в наявності
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BSM10GP120BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO2C-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
товару немає в наявності
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ICE5QR0680AZXKLA1 ICE5QR0680AZXKLA1 Infineon Technologies INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 74 W
на замовлення 4625 шт:
термін постачання 21-31 дні (днів)
183+122.58 грн
Мінімальне замовлення: 183
В кошику  од. на суму  грн.
CHL8328-28CRT CHL8328-28CRT Infineon Technologies IR3536%2C38_CHL8326%2C28_v1.09_6-21-13.pdf Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
товару немає в наявності
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FZ1500R33HE3C1NPSA1 Infineon Technologies Infineon-FZ1500R33HE3-DataSheet-v03_03-EN.pdf?fileId=db3a304314dca389011527dfc61411c3 Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
товару немає в наявності
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FZ1500R33HE3B60BPSA1 Infineon Technologies Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
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В кошику  од. на суму  грн.
IM111X6Q1BAUMA1 IM111X6Q1BAUMA1 Infineon Technologies Infineon-IM111-X6Q1B-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56df4cf01fe Description: CIPOS NANO PG-IQFN-37
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: H-Bridge
Voltage - Isolation: 1500Vrms
Grade: Automotive
Current: 12 A
Voltage: 600 V
Qualification: AEC-Q100
товару немає в наявності
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IM111X6Q1BAUMA1 IM111X6Q1BAUMA1 Infineon Technologies Infineon-IM111-X6Q1B-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56df4cf01fe Description: CIPOS NANO PG-IQFN-37
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: H-Bridge
Voltage - Isolation: 1500Vrms
Grade: Automotive
Current: 12 A
Voltage: 600 V
Qualification: AEC-Q100
товару немає в наявності
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BGAP2S30AE6327XTSA1 BGAP2S30AE6327XTSA1 Infineon Technologies Infineon-BGAP2S30A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599e5f10288 Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35dB
Current - Supply: 121mA
Noise Figure: 3.2dB
P1dB: 28.5dBm
Test Frequency: 3.6GHz
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+220.73 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
BGAP2S30AE6327XTSA1 BGAP2S30AE6327XTSA1 Infineon Technologies Infineon-BGAP2S30A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599e5f10288 Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35dB
Current - Supply: 121mA
Noise Figure: 3.2dB
P1dB: 28.5dBm
Test Frequency: 3.6GHz
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+514.16 грн
10+382.71 грн
25+348.44 грн
100+287.22 грн
250+266.00 грн
500+252.23 грн
1000+236.25 грн
В кошику  од. на суму  грн.
BGAP2D30AE6327XTSA1 Infineon Technologies Infineon-BGAP2D30A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4599c7440282 Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35.2dB
Current - Supply: 121mA
Noise Figure: 3.1dB
P1dB: 28.5dBm
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+236.37 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
BGAP2D30AE6327XTSA1 Infineon Technologies Infineon-BGAP2D30A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4599c7440282 Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35.2dB
Current - Supply: 121mA
Noise Figure: 3.1dB
P1dB: 28.5dBm
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+478.83 грн
10+353.76 грн
25+321.86 грн
100+265.51 грн
250+246.23 грн
500+233.80 грн
1000+219.34 грн
В кошику  од. на суму  грн.
BGAP2D20AE6327XTSA1 Infineon Technologies Infineon-BGAP2D20A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599b8fe027f Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35.1dB
Current - Supply: 121mA
Noise Figure: 3.4dB
P1dB: 28.9dBm
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+236.37 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
BGAP2D20AE6327XTSA1 Infineon Technologies Infineon-BGAP2D20A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599b8fe027f Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35.1dB
Current - Supply: 121mA
Noise Figure: 3.4dB
P1dB: 28.9dBm
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+478.83 грн
10+353.76 грн
25+321.86 грн
100+265.51 грн
250+246.23 грн
500+233.80 грн
1000+219.34 грн
В кошику  од. на суму  грн.
BGAP2S20AE6327XTSA1 BGAP2S20AE6327XTSA1 Infineon Technologies Infineon-BGAP2S20A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599d65a0285 Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 34.8dB
Current - Supply: 121mA
Noise Figure: 3.8dB
P1dB: 28.9dBm
Test Frequency: 2.5GHz
Supplier Device Package: PG-TSNP-16-13
товару немає в наявності
В кошику  од. на суму  грн.
BGAP2S20AE6327XTSA1 BGAP2S20AE6327XTSA1 Infineon Technologies Infineon-BGAP2S20A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599d65a0285 Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 34.8dB
Current - Supply: 121mA
Noise Figure: 3.8dB
P1dB: 28.9dBm
Test Frequency: 2.5GHz
Supplier Device Package: PG-TSNP-16-13
на замовлення 1960 шт:
термін постачання 21-31 дні (днів)
1+490.61 грн
10+362.76 грн
25+330.03 грн
100+272.24 грн
250+252.47 грн
500+239.73 грн
1000+224.90 грн
В кошику  од. на суму  грн.
CY7C1615KV18-333BZXC CY7C1615KV18-333BZXC Infineon Technologies Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726 Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
FP15R12W2T4BOMA1 FP15R12W2T4BOMA1 Infineon Technologies Infineon-FP15R12W2T4-DS-v03_00-en_de.pdf?fileId=db3a30433ba77ced013bae67c3eb3a5e Description: IGBT MOD 1200V 30A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 890 pF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+3891.11 грн
В кошику  од. на суму  грн.
CY14B108L-ZS45XIT CY14B108L-ZS45XIT Infineon Technologies Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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S29GL01GS11FAIV23 S29GL01GS11FAIV23 Infineon Technologies S29GL-S_PbPkg.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
FS10R06VE3BOMA1 FS10R06VE3BOMA1 Infineon Technologies Infineon-FS10R06VE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b432b87b5933 Description: IGBT MODULE 600V 16A 50W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
18+1262.41 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
FS10R06VE3BOMA1 FS10R06VE3BOMA1 Infineon Technologies Infineon-FS10R06VE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b432b87b5933 Description: IGBT MODULE 600V 16A 50W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
товару немає в наявності
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CY9AF142LAPMC1-G-MNE2 CY9AF142LAPMC1-G-MNE2 Infineon Technologies cy9a140nb-series-32-bit-arm-cortex-m3-fm3-microcontroller Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+694.70 грн
10+604.04 грн
25+575.96 грн
160+469.32 грн
320+448.23 грн
480+408.68 грн
960+350.11 грн
В кошику  од. на суму  грн.
IAUAN04S7N008AUMA1 IAUAN04S7N008AUMA1 Infineon Technologies Infineon-IAUAN04S7N008-DataSheet--DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190fa99f121f Description: IAUAN04S7N008AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IAUAN04S7N008AUMA1 IAUAN04S7N008AUMA1 Infineon Technologies Infineon-IAUAN04S7N008-DataSheet--DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190fa99f121f Description: IAUAN04S7N008AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
на замовлення 1879 шт:
термін постачання 21-31 дні (днів)
3+150.71 грн
10+120.72 грн
100+92.48 грн
500+70.42 грн
1000+68.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IAUAN04S7N007AUMA1 IAUAN04S7N007AUMA1 Infineon Technologies Infineon-IAUAN04S7N007-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906bfc9121b Description: IAUAN04S7N007AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
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IAUAN04S7N007AUMA1 IAUAN04S7N007AUMA1 Infineon Technologies Infineon-IAUAN04S7N007-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906bfc9121b Description: IAUAN04S7N007AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
на замовлення 364 шт:
термін постачання 21-31 дні (днів)
2+174.26 грн
10+131.53 грн
100+104.21 грн
Мінімальне замовлення: 2
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IAUAN04S7N006AUMA1 IAUAN04S7N006AUMA1 Infineon Technologies Infineon-IAUAN04S7N006-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906a25b1218 Description: IAUAN04S7N006AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Qualification: AEC-Q101
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IAUAN04S7N006AUMA1 IAUAN04S7N006AUMA1 Infineon Technologies Infineon-IAUAN04S7N006-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906a25b1218 Description: IAUAN04S7N006AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Qualification: AEC-Q101
на замовлення 455 шт:
термін постачання 21-31 дні (днів)
2+201.74 грн
10+148.46 грн
100+113.97 грн
Мінімальне замовлення: 2
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IAUAN04S7N005AUMA1 IAUAN04S7N005AUMA1 Infineon Technologies Infineon-IAUAN04S7N005-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f19068b361215 Description: IAUAN04S7N005AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 110µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+88.60 грн
Мінімальне замовлення: 2000
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IAUAN04S7N005AUMA1 IAUAN04S7N005AUMA1 Infineon Technologies Infineon-IAUAN04S7N005-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f19068b361215 Description: IAUAN04S7N005AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 110µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2032 шт:
термін постачання 21-31 дні (днів)
2+219.79 грн
10+162.75 грн
100+127.01 грн
500+97.38 грн
1000+94.41 грн
Мінімальне замовлення: 2
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IAUAN04S7N004AUMA1 IAUAN04S7N004AUMA1 Infineon Technologies Infineon-IAUAN04S7N004-Data-Sheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190682281212 Description: IAUAN04S7N004AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3V @ 150µA
Supplier Device Package: PG-HSOF-5-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+103.43 грн
Мінімальне замовлення: 2000
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S29GL01GS10FAI013 S29GL-S_PbPkg.pdf
S29GL01GS10FAI013
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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CY8CLED04D02-56LTXI CY8CLED0x%28D%2CG%290x.pdf
CY8CLED04D02-56LTXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 14
DigiKey Programmable: Not Verified
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TD500N18KOFXPSA1 Infineon-TT500N-DataSheet-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.8 kV
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TT500N16KOFXPSA1 Infineon-TT500N-DataSheet-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d
Виробник: Infineon Technologies
Description: THYR / DIODE MODULE DK
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 125°C (TJ)
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.6 kV
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TT500N18KOFHPSA2 Infineon-TT500N-DS-v03_04-EN.pdf?fileId=db3a30434486a89301448d34d0f7790d
TT500N18KOFHPSA2
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 900A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 500 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 900 A
Voltage - Off State: 1.8 kV
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S6E2G26HHAGV2000A
S6E2G26HHAGV2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 180MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SmartCard, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 153
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XDPS21071XUMA1 Infineon-XDPS21071-DataSheet-v01_00-EN.pdf?fileId=5546d4626e41e490016e632b3d382b14
XDPS21071XUMA1
Виробник: Infineon Technologies
Description: DIGITAL FFR CONTROLLER, DSO12
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -25°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 24.9kHz ~ 139.4kHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 3.3V
Supplier Device Package: PG-DSO-12-20
Synchronous Rectifier: No
Control Features: Current Limit, Soft Start
Output Phases: 1
Clock Sync: No
Number of Outputs: 1
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IRGP4660DPBF irgp4660dpbf.pdf?fileId=5546d462533600a40153565680d52478
IRGP4660DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 100A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 144 A
Power - Max: 330 W
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IRF7452PBF irf7452pbf.pdf?fileId=5546d462533600a4015355fb43911be6
IRF7452PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 4.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V
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S6E2C5AL0AGL2000A download
S6E2C5AL0AGL2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 216LQFP
Packaging: Tray
Package / Case: 216-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-LQFP (24x24)
Number of I/O: 190
DigiKey Programmable: Not Verified
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S6E2CC8J0AGB1000A download
S6E2CC8J0AGB1000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S6E2CC8H0AGV2000A download
S6E2CC8H0AGV2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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S6E2C5AJ0AGV2000A download
S6E2C5AJ0AGV2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S6E2CC8L0AGL2000A download
S6E2CC8L0AGL2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 216LQFP
Packaging: Tray
Package / Case: 216-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-LQFP (24x24)
Number of I/O: 190
DigiKey Programmable: Not Verified
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S6E2CC9H0AGV2000A download
S6E2CC9H0AGV2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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98-0265PBF fundamentals-of-power-semiconductors
Виробник: Infineon Technologies
Description: IC CONTROLLER PFC/BALLAST 16DIP
Packaging: Tube
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IR3477MTRPBF ir3477m.pdf?fileId=5546d462533600a4015355ccc110172d
IR3477MTRPBF
Виробник: Infineon Technologies
Description: IC REG BUCK ADJ 15A 16QFN
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerVQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 15A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: Up to 750kHz
Voltage - Input (Max): 27V
Topology: Buck
Supplier Device Package: 16-QFN (5x6)
Synchronous Rectifier: Yes
Voltage - Output (Max): 12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.5V
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S6E2C48H0AGV2000A download
S6E2C48H0AGV2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1491.45 грн
10+1154.41 грн
60+1081.01 грн
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S6E2C3AL0AGL2000A download
S6E2C3AL0AGL2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 216LQFP
Packaging: Tray
Package / Case: 216-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 216-LQFP (24x24)
Number of I/O: 190
DigiKey Programmable: Not Verified
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S6E2C48J0AGB1000A download
S6E2C48J0AGB1000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S6E2C48J0AGV2000A download
S6E2C48J0AGV2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S99-50572
Виробник: Infineon Technologies
Description: IC FLASH
Packaging: Bulk
Memory Format: FLASH
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S99-50539
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
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S99-50540
Виробник: Infineon Technologies
Description: INFINEON
Packaging: Bulk
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FF650R17IE4PB60BPSA1
Виробник: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 650A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 930 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 4150 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
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FF1000R17IE4PB60BPSA1
Виробник: Infineon Technologies
Description: PP IHM I
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Current - Collector (Ic) (Max): 1390 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 6250 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
товару немає в наявності
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IRFHM4234TRPBF irfhm4234pbf.pdf?fileId=5546d462533600a4015356200a4c1f31
IRFHM4234TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 20A PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
товару немає в наявності
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IRFHM4234TRPBF irfhm4234pbf.pdf?fileId=5546d462533600a4015356200a4c1f31
IRFHM4234TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 20A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-TQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 25µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1011 pF @ 13 V
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IRF6797MTRPBF irf6797mpbf.pdf?fileId=5546d462533600a4015355eda2091aa9
IRF6797MTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 36A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 38A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5790 pF @ 13 V
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BSM10GP120BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2C-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 10A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 100 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 600 pF @ 25 V
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ICE5QR0680AZXKLA1 INFN-S-A0003555962-1.pdf?t.download=true&u=5oefqw
ICE5QR0680AZXKLA1
Виробник: Infineon Technologies
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: PG-DIP-7
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 74 W
на замовлення 4625 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
183+122.58 грн
Мінімальне замовлення: 183
В кошику  од. на суму  грн.
CHL8328-28CRT IR3536%2C38_CHL8326%2C28_v1.09_6-21-13.pdf
CHL8328-28CRT
Виробник: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 56VQFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C (TA)
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: PG-VQFN-56-901
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FZ1500R33HE3C1NPSA1 Infineon-FZ1500R33HE3-DataSheet-v03_03-EN.pdf?fileId=db3a304314dca389011527dfc61411c3
Виробник: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
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FZ1500R33HE3B60BPSA1
Виробник: Infineon Technologies
Description: IHV IHM T XHP 3 3-6 5K AG-IHVB19
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
NTC Thermistor: No
Supplier Device Package: AG-IHVB190
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1500 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
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IM111X6Q1BAUMA1 Infineon-IM111-X6Q1B-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56df4cf01fe
IM111X6Q1BAUMA1
Виробник: Infineon Technologies
Description: CIPOS NANO PG-IQFN-37
Packaging: Tape & Reel (TR)
Package / Case: 39-PowerVQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: H-Bridge
Voltage - Isolation: 1500Vrms
Grade: Automotive
Current: 12 A
Voltage: 600 V
Qualification: AEC-Q100
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IM111X6Q1BAUMA1 Infineon-IM111-X6Q1B-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c56df4cf01fe
IM111X6Q1BAUMA1
Виробник: Infineon Technologies
Description: CIPOS NANO PG-IQFN-37
Packaging: Cut Tape (CT)
Package / Case: 39-PowerVQFN
Mounting Type: Surface Mount
Type: MOSFET
Configuration: H-Bridge
Voltage - Isolation: 1500Vrms
Grade: Automotive
Current: 12 A
Voltage: 600 V
Qualification: AEC-Q100
товару немає в наявності
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BGAP2S30AE6327XTSA1 Infineon-BGAP2S30A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599e5f10288
BGAP2S30AE6327XTSA1
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35dB
Current - Supply: 121mA
Noise Figure: 3.2dB
P1dB: 28.5dBm
Test Frequency: 3.6GHz
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+220.73 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
BGAP2S30AE6327XTSA1 Infineon-BGAP2S30A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599e5f10288
BGAP2S30AE6327XTSA1
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35dB
Current - Supply: 121mA
Noise Figure: 3.2dB
P1dB: 28.5dBm
Test Frequency: 3.6GHz
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+514.16 грн
10+382.71 грн
25+348.44 грн
100+287.22 грн
250+266.00 грн
500+252.23 грн
1000+236.25 грн
В кошику  од. на суму  грн.
BGAP2D30AE6327XTSA1 Infineon-BGAP2D30A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4599c7440282
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35.2dB
Current - Supply: 121mA
Noise Figure: 3.1dB
P1dB: 28.5dBm
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+236.37 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
BGAP2D30AE6327XTSA1 Infineon-BGAP2D30A-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8a44f57b018a4599c7440282
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.3GHz ~ 4.2GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35.2dB
Current - Supply: 121mA
Noise Figure: 3.1dB
P1dB: 28.5dBm
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+478.83 грн
10+353.76 грн
25+321.86 грн
100+265.51 грн
250+246.23 грн
500+233.80 грн
1000+219.34 грн
В кошику  од. на суму  грн.
BGAP2D20AE6327XTSA1 Infineon-BGAP2D20A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599b8fe027f
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35.1dB
Current - Supply: 121mA
Noise Figure: 3.4dB
P1dB: 28.9dBm
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+236.37 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
BGAP2D20AE6327XTSA1 Infineon-BGAP2D20A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599b8fe027f
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 35.1dB
Current - Supply: 121mA
Noise Figure: 3.4dB
P1dB: 28.9dBm
Supplier Device Package: PG-TSNP-16-13
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+478.83 грн
10+353.76 грн
25+321.86 грн
100+265.51 грн
250+246.23 грн
500+233.80 грн
1000+219.34 грн
В кошику  од. на суму  грн.
BGAP2S20AE6327XTSA1 Infineon-BGAP2S20A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599d65a0285
BGAP2S20AE6327XTSA1
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 34.8dB
Current - Supply: 121mA
Noise Figure: 3.8dB
P1dB: 28.9dBm
Test Frequency: 2.5GHz
Supplier Device Package: PG-TSNP-16-13
товару немає в наявності
В кошику  од. на суму  грн.
BGAP2S20AE6327XTSA1 Infineon-BGAP2S20A-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8a44f57b018a4599d65a0285
BGAP2S20AE6327XTSA1
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 16-WFDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 2.3GHz ~ 2.7GHz
RF Type: 4G, 5G
Voltage - Supply: 4.75V ~ 5.25V
Gain: 34.8dB
Current - Supply: 121mA
Noise Figure: 3.8dB
P1dB: 28.9dBm
Test Frequency: 2.5GHz
Supplier Device Package: PG-TSNP-16-13
на замовлення 1960 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+490.61 грн
10+362.76 грн
25+330.03 грн
100+272.24 грн
250+252.47 грн
500+239.73 грн
1000+224.90 грн
В кошику  од. на суму  грн.
CY7C1615KV18-333BZXC Infineon-CY7C1613KV18_CY7C1615KV18_144-Mbit_QDR_II_SRAM_Four-Word_Burst_Architecture-DataSheet-v13_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec23aab3726
CY7C1615KV18-333BZXC
Виробник: Infineon Technologies
Description: IC SRAM 144MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 144Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II
Clock Frequency: 333 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 36
DigiKey Programmable: Not Verified
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FP15R12W2T4BOMA1 Infineon-FP15R12W2T4-DS-v03_00-en_de.pdf?fileId=db3a30433ba77ced013bae67c3eb3a5e
FP15R12W2T4BOMA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 30A 145W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 145 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 890 pF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3891.11 грн
В кошику  од. на суму  грн.
CY14B108L-ZS45XIT Infineon-CY14B108L_CY14B108N_8-Mbit_(1024_K_8_512_K_16)_nvSRAM-DataSheet-v17_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebf410c3369&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY14B108L-ZS45XIT
Виробник: Infineon Technologies
Description: IC NVSRAM 8MBIT PAR 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S29GL01GS11FAIV23 S29GL-S_PbPkg.pdf
S29GL01GS11FAIV23
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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FS10R06VE3BOMA1 Infineon-FS10R06VE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b432b87b5933
FS10R06VE3BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 16A 50W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
на замовлення 60 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+1262.41 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
FS10R06VE3BOMA1 Infineon-FS10R06VE3-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b432b87b5933
FS10R06VE3BOMA1
Виробник: Infineon Technologies
Description: IGBT MODULE 600V 16A 50W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 50 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 550 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
CY9AF142LAPMC1-G-MNE2 cy9a140nb-series-32-bit-arm-cortex-m3-fm3-microcontroller
CY9AF142LAPMC1-G-MNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+694.70 грн
10+604.04 грн
25+575.96 грн
160+469.32 грн
320+448.23 грн
480+408.68 грн
960+350.11 грн
В кошику  од. на суму  грн.
IAUAN04S7N008AUMA1 Infineon-IAUAN04S7N008-DataSheet--DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190fa99f121f
IAUAN04S7N008AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N008AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IAUAN04S7N008AUMA1 Infineon-IAUAN04S7N008-DataSheet--DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190fa99f121f
IAUAN04S7N008AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N008AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 290A (Tj)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 90A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3V @ 60µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5410 pF @ 20 V
Qualification: AEC-Q101
на замовлення 1879 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+150.71 грн
10+120.72 грн
100+92.48 грн
500+70.42 грн
1000+68.87 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IAUAN04S7N007AUMA1 Infineon-IAUAN04S7N007-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906bfc9121b
IAUAN04S7N007AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N007AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IAUAN04S7N007AUMA1 Infineon-IAUAN04S7N007-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906bfc9121b
IAUAN04S7N007AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N007AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.72mOhm @ 100A, 10V
Power Dissipation (Max): 149W (Tc)
Vgs(th) (Max) @ Id: 3V @ 73µA
Supplier Device Package: PG-HSOF-5-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 20 V
Qualification: AEC-Q101
на замовлення 364 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+174.26 грн
10+131.53 грн
100+104.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUAN04S7N006AUMA1 Infineon-IAUAN04S7N006-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906a25b1218
IAUAN04S7N006AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N006AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IAUAN04S7N006AUMA1 Infineon-IAUAN04S7N006-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f1906a25b1218
IAUAN04S7N006AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N006AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 410A (Tj)
Rds On (Max) @ Id, Vgs: 0.57mOhm @ 100A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 20 V
Qualification: AEC-Q101
на замовлення 455 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+201.74 грн
10+148.46 грн
100+113.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUAN04S7N005AUMA1 Infineon-IAUAN04S7N005-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f19068b361215
IAUAN04S7N005AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N005AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 110µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+88.60 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUAN04S7N005AUMA1 Infineon-IAUAN04S7N005-DataSheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f19068b361215
IAUAN04S7N005AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N005AUMA1
Packaging: Cut Tape (CT)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 455A (Tj)
Rds On (Max) @ Id, Vgs: 0.51mOhm @ 100A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 3V @ 110µA
Supplier Device Package: PG-HSOF-5-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9820 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2032 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+219.79 грн
10+162.75 грн
100+127.01 грн
500+97.38 грн
1000+94.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUAN04S7N004AUMA1 Infineon-IAUAN04S7N004-Data-Sheet-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f190682281212
IAUAN04S7N004AUMA1
Виробник: Infineon Technologies
Description: IAUAN04S7N004AUMA1
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Ta), 570A (Tj)
Rds On (Max) @ Id, Vgs: 0.39mOhm @ 100A, 10V
Power Dissipation (Max): 238W (Tc)
Vgs(th) (Max) @ Id: 3V @ 150µA
Supplier Device Package: PG-HSOF-5-5
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+103.43 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
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