Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123056) > Сторінка 729 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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CYPD3173P-24LQXQT | Infineon Technologies |
 Description: EZ-PD CCG3PA-NFETPackaging: Cut Tape (CT) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: PWM RAM Size: 4K x 8 Controller Series: CYPD3x Program Memory Type: FLASH (64kB) Applications: Power Adaptor Core Processor: ARM® Cortex®-M0 Supplier Device Package: 24-QFN (4x4) Number of I/O: 6 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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FS150R12KT4PB11BPSA1 | Infineon Technologies |
Description: MOD IGBT LOW PWR ECONO3-4 Packaging: Tray |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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CYT4DNJBRCQ1BZSGST | Infineon Technologies |
Description: IC MCU 32BIT 6.188MB FLSH 327BGA Packaging: Tape & Reel (TR) Package / Case: 327-BGA Mounting Type: Surface Mount Speed: 320MHz Program Memory Size: 6.188MB (6.188M x 8) RAM Size: 640K x 8 Operating Temperature: -40°C ~ 105°C (TA) Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F Core Size: 32-Bit Quad-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: DMA, I2S, LVD, Temp Sensor, WDT Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Supplier Device Package: 327-BGA Number of I/O: 168 DigiKey Programmable: Not Verified |
на замовлення 1400 шт: термін постачання 21-31 дні (днів) |
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CYT4DNJBRCQ1BZSGST | Infineon Technologies |
Description: IC MCU 32BIT 6.188MB FLSH 327BGA Packaging: Cut Tape (CT) Package / Case: 327-BGA Mounting Type: Surface Mount Speed: 320MHz Program Memory Size: 6.188MB (6.188M x 8) RAM Size: 640K x 8 Operating Temperature: -40°C ~ 105°C (TA) Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F Core Size: 32-Bit Quad-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: DMA, I2S, LVD, Temp Sensor, WDT Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Supplier Device Package: 327-BGA Number of I/O: 168 DigiKey Programmable: Not Verified |
на замовлення 1400 шт: термін постачання 21-31 дні (днів) |
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CY95F562KNPFT-G-UNE2 | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 20TSSOP DigiKey Programmable: Not Verified Number of I/O: 17 Supplier Device Package: 20-TSSOP Peripherals: LVD, POR, PWM, WDT Connectivity: LINbus-UART Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Core Size: 8-Bit Data Converters: A/D 6x8/10b Core Processor: F²MC-8FX Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 240 x 8 Program Memory Size: 8KB (8K x 8) Speed: 16MHz Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 5600 шт В кошику од. на суму грн. | ||||||||||||||
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AUIRFS8403 | Infineon Technologies |
Description: AUIRFS8403 - 20V-40V N-CHANNEL A Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 123A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V Power Dissipation (Max): 99W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: PG-TO263-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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AUIRFS3806 | Infineon Technologies |
Description: MOSFET N-CH 60V 43A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: PG-TO263-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 676 шт: термін постачання 21-31 дні (днів) |
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AUIRFS3806 | Infineon Technologies |
Description: MOSFET N-CH 60V 43A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Tc) Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: PG-TO263-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRFS3607 | Infineon Technologies |
Description: MOSFET N-CH 75V 80A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: PG-TO263-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 200 шт В кошику од. на суму грн. | ||||||||||||||
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IRGSL4062DPBF | Infineon Technologies |
Description: IGBT TRENCH 600V 48A TO-262 Power - Max: 250 W Current - Collector Pulsed (Icm): 96 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 48 A Gate Charge: 50 nC Test Condition: 400V, 24A, 10Ohm, 15V Switching Energy: 115µJ (on), 600µJ (off) Td (on/off) @ 25°C: 41ns/104ns IGBT Type: Trench Supplier Device Package: TO-262 Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A Reverse Recovery Time (trr): 89 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Packaging: Tube |
на замовлення 1283 шт: термін постачання 21-31 дні (днів) |
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IRGS8B60KPBF | Infineon Technologies |
Description: IGBT Packaging: Bulk |
на замовлення 550 шт: термін постачання 21-31 дні (днів) |
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IRGS8B60KPBF | Infineon Technologies |
Description: IGBT 600V 28A 167W D2PAK Power - Max: 167 W Current - Collector Pulsed (Icm): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 28 A Gate Charge: 29 nC Test Condition: 400V, 8A, 50Ohm, 15V Switching Energy: 160µJ (on), 160µJ (off) Td (on/off) @ 25°C: 23ns/140ns IGBT Type: NPT Supplier Device Package: D2PAK Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRGSL30B60KPBF | Infineon Technologies |
Description: IGBT 600V 78A 370W TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A Supplier Device Package: TO-262 IGBT Type: NPT Td (on/off) @ 25°C: 46ns/185ns Switching Energy: 350µJ (on), 825µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 102 nC Current - Collector (Ic) (Max): 78 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 370 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IPT60T040S7XTMA1 | Infineon Technologies |
Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tj) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V Power Dissipation (Max): 245W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 780µA Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 300 V |
на замовлення 2198 шт: термін постачання 21-31 дні (днів) |
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AIMZH120R030M1TXKSA1 | Infineon Technologies |
Description: SIC_DISCRETE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V Power Dissipation (Max): 326W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 8.6mA Supplier Device Package: PG-TO247-4-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 209 шт: термін постачання 21-31 дні (днів) |
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AIMZH120R160M1TXKSA1 | Infineon Technologies |
Description: SIC_DISCRETE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V Power Dissipation (Max): 109W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 1.5mA Supplier Device Package: PG-TO247-4-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 57 шт: термін постачання 21-31 дні (днів) |
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AIMZH120R120M1TXKSA1 | Infineon Technologies |
Description: SIC_DISCRETE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V Power Dissipation (Max): 133W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 2.2mA Supplier Device Package: PG-TO247-4-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 210 шт: термін постачання 21-31 дні (днів) |
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AIMZH120R080M1TXKSA1 | Infineon Technologies |
Description: SIC_DISCRETE Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V Power Dissipation (Max): 169W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 3.3mA Supplier Device Package: PG-TO247-4-11 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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CYDMX256A16-90BVXI | Infineon Technologies |
Description: IC SRAM 256KBIT PAR 100VFBGA DigiKey Programmable: Not Verified Memory Organization: 16K x 16 Access Time: 90 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 90ns Supplier Device Package: 100-VFBGA (6x6) Memory Format: SRAM Technology: SRAM - Dual Port, MoBL Voltage - Supply: 1.8V ~ 3.3V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 256Kbit Mounting Type: Surface Mount Package / Case: 100-VFBGA Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IFCM10P60GDXKMA1 | Infineon Technologies |
Description: IFPS MODULES Packaging: Tube Package / Case: 24-PowerDIP Module (1.028", 26.10mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Current: 10 A Voltage: 600 V |
товару немає в наявності |
Мінімальне замовлення: 280 шт В кошику од. на суму грн. | ||||||||||||||
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CYAT817AZS88-52002 | Infineon Technologies |
Description: PSOC BASED - TRUETOUCH Packaging: Tray Package / Case: 128-LQFP Mounting Type: Surface Mount Interface: I2C, SPI Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Supplier Device Package: 128-TQFP (14x20) Touchscreen: 2 Wire Capacitive Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 720 шт В кошику од. на суму грн. | ||||||||||||||
| TC356TH64F300SABKXUMA2 | Infineon Technologies |
Description: IC MCU Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||
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TC357TA64F300SABKXUMA2 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGA Packaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 4MB (4M x 8) RAM Size: 1.44M x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: TriCore™ Data Converters: A/D 16x12b SAR, Sigma-Delta Core Size: 32-Bit 5-Core Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, LVDS, PWM, WDT Supplier Device Package: PG-LFBGA-292-13 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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TT162N14KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.4KV 260A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 162 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - Off State: 1.4 kV |
товару немає в наявності |
Мінімальне замовлення: 8 шт В кошику од. на суму грн. | ||||||||||||||
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DT142N12KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.2KV MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 142 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - Off State: 1.2 kV |
на замовлення 16 шт: термін постачання 21-31 дні (днів) |
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DT142N12KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.2KV MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 142 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - Off State: 1.2 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TT142N12KOFHPSA1 | Infineon Technologies |
Description: SCR MODULE 1.2KV MODULE Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Series Connection - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz Number of SCRs, Diodes: 2 SCRs Current - On State (It (AV)) (Max): 142 A Voltage - Gate Trigger (Vgt) (Max): 2 V Voltage - Off State: 1.2 kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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DD171N16KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1.6KV 171A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 171A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A Current - Reverse Leakage @ Vr: 20 mA @ 1600 V |
товару немає в наявності |
Мінімальне замовлення: 8 шт В кошику од. на суму грн. | ||||||||||||||
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TD180N16KOFHPSA1 | Infineon Technologies |
Description: THYRISTOR MODULE 1600V 180A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: 130°C (TJ) Structure: Series Connection - SCR/Diode Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Number of SCRs, Diodes: 1 SCR, 1 Diode Current - On State (It (AV)) (Max): 180 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (RMS)) (Max): 285 A Voltage - Off State: 1.6 kV |
товару немає в наявності |
Мінімальне замовлення: 8 шт В кошику од. на суму грн. | ||||||||||||||
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S25FL164K0XMFV013 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 108 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 3ms Memory Interface: SPI - Quad I/O Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DD171N12KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 1.2KV 171A Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 171A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A Current - Reverse Leakage @ Vr: 20 mA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IM06B15AC1XKMA1 | Infineon Technologies |
Description: IGBT IPM 650V 15A 24-PWRDIP MOD Packaging: Tray Package / Case: 24-PowerDIP Module, Offset Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2000Vrms Current: 15 A Voltage: 650 V |
на замовлення 184 шт: термін постачання 21-31 дні (днів) |
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| CG10188AA | Infineon Technologies |
Description: IC MEMORY Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SAL-TC299TP-128F300N BC | Infineon Technologies |
Description: IC MCU 32BIT 8MB FLASH 516LFBGA Packaging: Tape & Reel (TR) Package / Case: 516-LFBGA Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 8MB (8M x 8) RAM Size: 728K x 8 Operating Temperature: -40°C ~ 150°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 768K x 8 Core Processor: TriCore™ Data Converters: A/D 94x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Supplier Device Package: PG-LFBGA-516-5 Number of I/O: 263 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SAK-TC297TX-128F300N BC | Infineon Technologies |
Description: IC MCU 32BIT 8MB FLASH 292LFBGA Packaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 300MHz Program Memory Size: 8MB (8M x 8) RAM Size: 2.7M x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 768K x 8 Core Processor: TriCore™ Data Converters: A/D 94x12b SAR, Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Supplier Device Package: PG-LFBGA-292-6 Number of I/O: 263 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IMZA75R027M1HXKSA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFET Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 8.8mA Supplier Device Package: PG-TO247-4 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V |
на замовлення 202 шт: термін постачання 21-31 дні (днів) |
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CYAT817AZS77-42002 | Infineon Technologies |
Description: PSOC BASED - TRUETOUCH Packaging: Tray Package / Case: 128-LQFP Mounting Type: Surface Mount Interface: I2C, SPI Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Supplier Device Package: 128-TQFP (14x20) Touchscreen: 2 Wire Capacitive Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 720 шт В кошику од. на суму грн. | ||||||||||||||
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CYAT817AZS77-5A002 | Infineon Technologies |
Description: PSOC BASED - TRUETOUCH Packaging: Tray Package / Case: 128-LQFP Mounting Type: Surface Mount Interface: I2C, SPI Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Supplier Device Package: 128-TQFP (14x20) Touchscreen: 2 Wire Capacitive Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 720 шт В кошику од. на суму грн. | ||||||||||||||
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CYAT817AZS77-5A202 | Infineon Technologies |
Description: PSOC BASED - TRUETOUCH Packaging: Tray Package / Case: 128-LQFP Mounting Type: Surface Mount Interface: I2C, SPI Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Supplier Device Package: 128-TQFP (14x20) Touchscreen: 2 Wire Capacitive Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 720 шт В кошику од. на суму грн. | ||||||||||||||
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CYAT817AZS77-520DA | Infineon Technologies |
Description: PSOC BASED - TRUETOUCH Packaging: Tray Package / Case: 128-LQFP Mounting Type: Surface Mount Interface: I2C, SPI Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Supplier Device Package: 128-TQFP (14x20) Touchscreen: 2 Wire Capacitive Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 720 шт В кошику од. на суму грн. | ||||||||||||||
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CYAT817AZS77-5BFBA | Infineon Technologies |
Description: PSOC BASED - TRUETOUCH Packaging: Tray Package / Case: 128-LQFP Mounting Type: Surface Mount Interface: I2C, SPI Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Supplier Device Package: 128-TQFP (14x20) Touchscreen: 2 Wire Capacitive Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 720 шт В кошику од. на суму грн. | ||||||||||||||
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CYAT847AZS77-42002 | Infineon Technologies |
Description: PSOC BASED - TRUETOUCH Packaging: Tray Package / Case: 128-LQFP Mounting Type: Surface Mount Interface: I2C Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V Supplier Device Package: 128-TQFP (14x20) Touchscreen: 2 Wire Capacitive Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 720 шт В кошику од. на суму грн. | ||||||||||||||
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CY8C4127LQI-BL483 | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 56QFN DigiKey Programmable: Not Verified Serial Interfaces: I2C, SPI, UART RF Family/Standard: Bluetooth, General ISM > 1GHz Modulation: GFSK GPIO: 36 Supplier Device Package: 56-QFN (7x7) Current - Transmitting: 14.2mA ~ 20mA Data Rate (Max): 8Mbps Current - Receiving: 16.4mA ~ 18.7mA Protocol: Bluetooth v4.2 Power - Output: 3dB Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Type: TxRx + MCU Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM Frequency: 2.4GHz Mounting Type: Surface Mount Sensitivity: -91dBm Package / Case: 56-UFQFN Exposed Pad Packaging: Bulk |
на замовлення 105 шт: термін постачання 21-31 дні (днів) |
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| XC164CS32F40FBBAKXQMA1 | Infineon Technologies |
Description: IC MCU 16BIT 256KB FLASH Packaging: Tray Speed: 40MHz Program Memory Size: 256KB (256K x 8) RAM Size: 12K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 14x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V Connectivity: CANbus, EBI/EMI, SPI, UART/USART Peripherals: PWM, WDT Number of I/O: 79 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 540 шт В кошику од. на суму грн. | |||||||||||||||
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BSP318SL6327HTSA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 2.6A SOT223-4 Packaging: Bulk Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: PG-SOT223-4-21 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2229660 шт: термін постачання 21-31 дні (днів) |
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TLS115B0LDDEMOBOARDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLS115B0LD Contents: Board(s) Channels per IC: 1 - Single Supplied Contents: Board(s) Utilized IC / Part: TLS115B0LD Board Type: Fully Populated Regulator Type: Positive Adjustable Current - Output: 150mA Voltage - Input: 4V ~ 45V Voltage - Output: 2V ~ 14V Packaging: Bulk |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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TLS810B1LDV50BOARDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLS810B1LDV50 Contents: Board(s) Channels per IC: 1 - Single Supplied Contents: Board(s) Utilized IC / Part: TLS810B1LDV50 Board Type: Fully Populated Regulator Type: Positive Fixed Current - Output: 100mA Voltage - Input: 3V ~ 42V Voltage - Output: 5V Packaging: Bulk |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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TLS810A1LDV50BOARDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLS810A1LDV50 Contents: Board(s) Channels per IC: 1 - Single Supplied Contents: Board(s) Utilized IC / Part: TLS810A1LDV50 Board Type: Fully Populated Regulator Type: Positive Fixed Current - Output: 100mA Voltage - Input: 3V ~ 42V Voltage - Output: 5V Packaging: Bulk |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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TLS810D1LDV50BOARDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLS810D1LDV50 Contents: Board(s) Channels per IC: 1 - Single Supplied Contents: Board(s) Utilized IC / Part: TLS810D1LDV50 Board Type: Fully Populated Regulator Type: Positive Fixed Current - Output: 100mA Voltage - Input: 3V ~ 42V Voltage - Output: 5V Packaging: Bulk |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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TLS810B1LDV33BOARDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLS810B1LDV33 Packaging: Bulk Voltage - Output: 3.3V Voltage - Input: 3V ~ 42V Current - Output: 100mA Regulator Type: Positive Fixed Board Type: Fully Populated Utilized IC / Part: TLS810B1LDV33 Supplied Contents: Board(s) Channels per IC: 1 - Single Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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S25FL256LAGNFN011 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 8WSON Packaging: Tube Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (6x8) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 410 шт В кошику од. на суму грн. | ||||||||||||||
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CY9AF112NAPF-G-JNE1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 100QFP Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 83 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY9AF114NAPF-G-JNE1 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 100QFP Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 83 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY9AF115NAPF-G-JNE1 | Infineon Technologies |
Description: IC MCU 32BIT 384KB FLASH 100QFP Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 384KB (384K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 83 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY9AF116NAPF-G-JNE1 | Infineon Technologies |
Description: IC MCU 32BIT 512KB FLASH 100QFP Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 512KB (512K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 83 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY9AF311NAPF-G-JNE1 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 100QFP Packaging: Tray Package / Case: 100-BQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 64KB (64K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 16x12b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 100-QFP (14x20) Number of I/O: 83 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY9AF312NAPF-G-JNE1 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 100QFP DigiKey Programmable: Not Verified Number of I/O: 83 Supplier Device Package: 100-QFP (14x20) Peripherals: DMA, LVD, POR, PWM, WDT Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x12b Core Processor: ARM® Cortex®-M3 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 16K x 8 Program Memory Size: 128KB (128K x 8) Speed: 40MHz Mounting Type: Surface Mount Package / Case: 100-BQFP Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MB90F809SPF-G-JNE1 | Infineon Technologies |
Description: IC MCU 16BIT 192KB 100BQFP DigiKey Programmable: Not Verified Number of I/O: 70 Supplier Device Package: 100-QFP (14x20) Peripherals: LCD, PWM, WDT Connectivity: I2C, Serial I/O, UART/USART Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Core Size: 16-Bit Data Converters: A/D 12x8/10b Core Processor: F²MC-16LX Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 10K x 8 Program Memory Size: 192KB (192K x 8) Speed: 25MHz Mounting Type: Surface Mount Package / Case: 100-BQFP Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GATELEADL500PB20G1KXPSA1 | Infineon Technologies |
Description: CABLE PWR ENTRY 2WIRE 0.5M Packaging: Tray Type: Power Contacts to Wire Number of Lines: 2 Cable Length - Unexposed: 1.64' (0.50m) 19.69" |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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CY8C4147AZE-S295 | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64TQFP Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b, 20x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Grade: Automotive Number of I/O: 54 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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| CYPD3173P-24LQXQT |
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Виробник: Infineon Technologies
Description: EZ-PD CCG3PA-NFET
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
RAM Size: 4K x 8
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 6
DigiKey Programmable: Not Verified
Description: EZ-PD CCG3PA-NFET
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
RAM Size: 4K x 8
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 6
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| FS150R12KT4PB11BPSA1 |
|
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7923.43 грн |
| CYT4DNJBRCQ1BZSGST |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 6.188MB FLSH 327BGA
Packaging: Tape & Reel (TR)
Package / Case: 327-BGA
Mounting Type: Surface Mount
Speed: 320MHz
Program Memory Size: 6.188MB (6.188M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-BGA
Number of I/O: 168
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 6.188MB FLSH 327BGA
Packaging: Tape & Reel (TR)
Package / Case: 327-BGA
Mounting Type: Surface Mount
Speed: 320MHz
Program Memory Size: 6.188MB (6.188M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-BGA
Number of I/O: 168
DigiKey Programmable: Not Verified
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 700+ | 2333.88 грн |
| CYT4DNJBRCQ1BZSGST |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 6.188MB FLSH 327BGA
Packaging: Cut Tape (CT)
Package / Case: 327-BGA
Mounting Type: Surface Mount
Speed: 320MHz
Program Memory Size: 6.188MB (6.188M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-BGA
Number of I/O: 168
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 6.188MB FLSH 327BGA
Packaging: Cut Tape (CT)
Package / Case: 327-BGA
Mounting Type: Surface Mount
Speed: 320MHz
Program Memory Size: 6.188MB (6.188M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-BGA
Number of I/O: 168
DigiKey Programmable: Not Verified
на замовлення 1400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3449.11 грн |
| 10+ | 2713.43 грн |
| 25+ | 2561.70 грн |
| 100+ | 2247.54 грн |
| 250+ | 2172.94 грн |
| CY95F562KNPFT-G-UNE2 |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 20TSSOP
DigiKey Programmable: Not Verified
Number of I/O: 17
Supplier Device Package: 20-TSSOP
Peripherals: LVD, POR, PWM, WDT
Connectivity: LINbus-UART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 6x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 240 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Description: IC MCU 8BIT 8KB FLASH 20TSSOP
DigiKey Programmable: Not Verified
Number of I/O: 17
Supplier Device Package: 20-TSSOP
Peripherals: LVD, POR, PWM, WDT
Connectivity: LINbus-UART
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 6x8/10b
Core Processor: F²MC-8FX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 240 x 8
Program Memory Size: 8KB (8K x 8)
Speed: 16MHz
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
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Мінімальне замовлення: 5600 шт
В кошику
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| AUIRFS8403 |
|
Виробник: Infineon Technologies
Description: AUIRFS8403 - 20V-40V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
Qualification: AEC-Q101
Description: AUIRFS8403 - 20V-40V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 160+ | 123.82 грн |
| AUIRFS3806 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 43A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 43A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Qualification: AEC-Q101
на замовлення 676 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 322+ | 69.14 грн |
| AUIRFS3806 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 43A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 43A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Qualification: AEC-Q101
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В кошику
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| AUIRFS3607 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику
од. на суму грн.
| IRGSL4062DPBF |
|
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 48A TO-262
Power - Max: 250 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 50 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 115µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 41ns/104ns
IGBT Type: Trench
Supplier Device Package: TO-262
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Reverse Recovery Time (trr): 89 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Description: IGBT TRENCH 600V 48A TO-262
Power - Max: 250 W
Current - Collector Pulsed (Icm): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 50 nC
Test Condition: 400V, 24A, 10Ohm, 15V
Switching Energy: 115µJ (on), 600µJ (off)
Td (on/off) @ 25°C: 41ns/104ns
IGBT Type: Trench
Supplier Device Package: TO-262
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Reverse Recovery Time (trr): 89 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
на замовлення 1283 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 124+ | 160.49 грн |
| IRGS8B60KPBF |
|
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 353+ | 58.73 грн |
| IRGS8B60KPBF |
|
Виробник: Infineon Technologies
Description: IGBT 600V 28A 167W D2PAK
Power - Max: 167 W
Current - Collector Pulsed (Icm): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 28 A
Gate Charge: 29 nC
Test Condition: 400V, 8A, 50Ohm, 15V
Switching Energy: 160µJ (on), 160µJ (off)
Td (on/off) @ 25°C: 23ns/140ns
IGBT Type: NPT
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: IGBT 600V 28A 167W D2PAK
Power - Max: 167 W
Current - Collector Pulsed (Icm): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 28 A
Gate Charge: 29 nC
Test Condition: 400V, 8A, 50Ohm, 15V
Switching Energy: 160µJ (on), 160µJ (off)
Td (on/off) @ 25°C: 23ns/140ns
IGBT Type: NPT
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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| IRGSL30B60KPBF |
|
Виробник: Infineon Technologies
Description: IGBT 600V 78A 370W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/185ns
Switching Energy: 350µJ (on), 825µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 102 nC
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 370 W
Description: IGBT 600V 78A 370W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/185ns
Switching Energy: 350µJ (on), 825µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 102 nC
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 370 W
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| IPT60T040S7XTMA1 |
|
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tj)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 780µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 300 V
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tj)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 780µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 300 V
на замовлення 2198 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 490.52 грн |
| 10+ | 334.30 грн |
| 100+ | 250.55 грн |
| AIMZH120R030M1TXKSA1 |
|
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1282.47 грн |
| 30+ | 771.85 грн |
| 120+ | 685.95 грн |
| AIMZH120R160M1TXKSA1 |
|
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Qualification: AEC-Q101
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Qualification: AEC-Q101
на замовлення 57 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 617.60 грн |
| 30+ | 348.83 грн |
| AIMZH120R120M1TXKSA1 |
|
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 581.96 грн |
| 30+ | 327.64 грн |
| 120+ | 276.61 грн |
| AIMZH120R080M1TXKSA1 |
|
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 753.99 грн |
| CYDMX256A16-90BVXI |
|
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 100VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 16K x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 90ns
Supplier Device Package: 100-VFBGA (6x6)
Memory Format: SRAM
Technology: SRAM - Dual Port, MoBL
Voltage - Supply: 1.8V ~ 3.3V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 100-VFBGA
Packaging: Tray
Description: IC SRAM 256KBIT PAR 100VFBGA
DigiKey Programmable: Not Verified
Memory Organization: 16K x 16
Access Time: 90 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 90ns
Supplier Device Package: 100-VFBGA (6x6)
Memory Format: SRAM
Technology: SRAM - Dual Port, MoBL
Voltage - Supply: 1.8V ~ 3.3V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 256Kbit
Mounting Type: Surface Mount
Package / Case: 100-VFBGA
Packaging: Tray
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| IFCM10P60GDXKMA1 |
|
Виробник: Infineon Technologies
Description: IFPS MODULES
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
Description: IFPS MODULES
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
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Мінімальне замовлення: 280 шт
В кошику
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| CYAT817AZS88-52002 |
|
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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Мінімальне замовлення: 720 шт
В кошику
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| TC356TH64F300SABKXUMA2 |
товару немає в наявності
Мінімальне замовлення: 1500 шт
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| TC357TA64F300SABKXUMA2 |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 1.44M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 16x12b SAR, Sigma-Delta
Core Size: 32-Bit 5-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-13
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 1.44M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 16x12b SAR, Sigma-Delta
Core Size: 32-Bit 5-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-13
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 1712.75 грн |
| TT162N14KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 260A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.4 kV
Description: SCR MODULE 1.4KV 260A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.4 kV
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Мінімальне замовлення: 8 шт
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| DT142N12KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 142 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.2 kV
Description: SCR MODULE 1.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 142 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.2 kV
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 7638.52 грн |
| DT142N12KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 142 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.2 kV
Description: SCR MODULE 1.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 142 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.2 kV
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| TT142N12KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 142 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.2 kV
Description: SCR MODULE 1.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 142 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.2 kV
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| DD171N16KHPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1.6KV 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 171A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
Description: DIODE MODULE GP 1.6KV 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 171A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
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Мінімальне замовлення: 8 шт
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| TD180N16KOFHPSA1 |
|
Виробник: Infineon Technologies
Description: THYRISTOR MODULE 1600V 180A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 285 A
Voltage - Off State: 1.6 kV
Description: THYRISTOR MODULE 1600V 180A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 285 A
Voltage - Off State: 1.6 kV
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Мінімальне замовлення: 8 шт
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| S25FL164K0XMFV013 |
|
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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| DD171N12KHPSA1 |
|
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1.2KV 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 171A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Description: DIODE MODULE GP 1.2KV 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 171A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
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| IM06B15AC1XKMA1 |
|
Виробник: Infineon Technologies
Description: IGBT IPM 650V 15A 24-PWRDIP MOD
Packaging: Tray
Package / Case: 24-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 650 V
Description: IGBT IPM 650V 15A 24-PWRDIP MOD
Packaging: Tray
Package / Case: 24-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 650 V
на замовлення 184 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1001.18 грн |
| 14+ | 640.78 грн |
| 112+ | 500.14 грн |
| SAL-TC299TP-128F300N BC |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 768K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 263
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 8MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 768K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 263
DigiKey Programmable: Not Verified
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| SAK-TC297TX-128F300N BC |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 2.7M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 768K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 263
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 2.7M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 768K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 263
DigiKey Programmable: Not Verified
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| IMZA75R027M1HXKSA1 |
|
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
на замовлення 202 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 924.46 грн |
| 30+ | 543.11 грн |
| 120+ | 471.25 грн |
| CYAT817AZS77-42002 |
|
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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Мінімальне замовлення: 720 шт
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| CYAT817AZS77-5A002 |
|
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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Мінімальне замовлення: 720 шт
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| CYAT817AZS77-5A202 |
|
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 720 шт
В кошику
од. на суму грн.
| CYAT817AZS77-520DA |
|
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 720 шт
В кошику
од. на суму грн.
| CYAT817AZS77-5BFBA |
|
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 720 шт
В кошику
од. на суму грн.
| CYAT847AZS77-42002 |
|
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 720 шт
В кошику
од. на суму грн.
| CY8C4127LQI-BL483 |
|
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 56QFN
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth, General ISM > 1GHz
Modulation: GFSK
GPIO: 36
Supplier Device Package: 56-QFN (7x7)
Current - Transmitting: 14.2mA ~ 20mA
Data Rate (Max): 8Mbps
Current - Receiving: 16.4mA ~ 18.7mA
Protocol: Bluetooth v4.2
Power - Output: 3dB
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: TxRx + MCU
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -91dBm
Package / Case: 56-UFQFN Exposed Pad
Packaging: Bulk
Description: IC RF TXRX+MCU BLE 56QFN
DigiKey Programmable: Not Verified
Serial Interfaces: I2C, SPI, UART
RF Family/Standard: Bluetooth, General ISM > 1GHz
Modulation: GFSK
GPIO: 36
Supplier Device Package: 56-QFN (7x7)
Current - Transmitting: 14.2mA ~ 20mA
Data Rate (Max): 8Mbps
Current - Receiving: 16.4mA ~ 18.7mA
Protocol: Bluetooth v4.2
Power - Output: 3dB
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Type: TxRx + MCU
Memory Size: 128kB Flash, 8kB ROM, 16kB SRAM
Frequency: 2.4GHz
Mounting Type: Surface Mount
Sensitivity: -91dBm
Package / Case: 56-UFQFN Exposed Pad
Packaging: Bulk
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 105+ | 254.25 грн |
| XC164CS32F40FBBAKXQMA1 |
|
Виробник: Infineon Technologies
Description: IC MCU 16BIT 256KB FLASH
Packaging: Tray
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Number of I/O: 79
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 256KB FLASH
Packaging: Tray
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 14x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 2.35V ~ 2.7V
Connectivity: CANbus, EBI/EMI, SPI, UART/USART
Peripherals: PWM, WDT
Number of I/O: 79
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 540 шт
В кошику
од. на суму грн.
| BSP318SL6327HTSA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 2.6A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 2.6A SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2229660 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 945+ | 21.24 грн |
| TLS115B0LDDEMOBOARDTOBO1 |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS115B0LD
Contents: Board(s)
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS115B0LD
Board Type: Fully Populated
Regulator Type: Positive Adjustable
Current - Output: 150mA
Voltage - Input: 4V ~ 45V
Voltage - Output: 2V ~ 14V
Packaging: Bulk
Description: EVAL BOARD FOR TLS115B0LD
Contents: Board(s)
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS115B0LD
Board Type: Fully Populated
Regulator Type: Positive Adjustable
Current - Output: 150mA
Voltage - Input: 4V ~ 45V
Voltage - Output: 2V ~ 14V
Packaging: Bulk
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2113.95 грн |
| TLS810B1LDV50BOARDTOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS810B1LDV50
Contents: Board(s)
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS810B1LDV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 100mA
Voltage - Input: 3V ~ 42V
Voltage - Output: 5V
Packaging: Bulk
Description: EVAL BOARD FOR TLS810B1LDV50
Contents: Board(s)
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS810B1LDV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 100mA
Voltage - Input: 3V ~ 42V
Voltage - Output: 5V
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4021.00 грн |
| TLS810A1LDV50BOARDTOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS810A1LDV50
Contents: Board(s)
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS810A1LDV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 100mA
Voltage - Input: 3V ~ 42V
Voltage - Output: 5V
Packaging: Bulk
Description: EVAL BOARD FOR TLS810A1LDV50
Contents: Board(s)
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS810A1LDV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 100mA
Voltage - Input: 3V ~ 42V
Voltage - Output: 5V
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4021.00 грн |
| TLS810D1LDV50BOARDTOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS810D1LDV50
Contents: Board(s)
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS810D1LDV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 100mA
Voltage - Input: 3V ~ 42V
Voltage - Output: 5V
Packaging: Bulk
Description: EVAL BOARD FOR TLS810D1LDV50
Contents: Board(s)
Channels per IC: 1 - Single
Supplied Contents: Board(s)
Utilized IC / Part: TLS810D1LDV50
Board Type: Fully Populated
Regulator Type: Positive Fixed
Current - Output: 100mA
Voltage - Input: 3V ~ 42V
Voltage - Output: 5V
Packaging: Bulk
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4021.00 грн |
| TLS810B1LDV33BOARDTOBO1 |
|
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS810B1LDV33
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS810B1LDV33
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Contents: Board(s)
Description: EVAL BOARD FOR TLS810B1LDV33
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Regulator Type: Positive Fixed
Board Type: Fully Populated
Utilized IC / Part: TLS810B1LDV33
Supplied Contents: Board(s)
Channels per IC: 1 - Single
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4082.99 грн |
| S25FL256LAGNFN011 |
|
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 410 шт
В кошику
од. на суму грн.
| CY9AF112NAPF-G-JNE1 |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| CY9AF114NAPF-G-JNE1 |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| CY9AF115NAPF-G-JNE1 |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 384KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 384KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| CY9AF116NAPF-G-JNE1 |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 512KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| CY9AF311NAPF-G-JNE1 |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 64KB FLASH 100QFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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В кошику
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| CY9AF312NAPF-G-JNE1 |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 83
Supplier Device Package: 100-QFP (14x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
Description: IC MCU 32BIT 128KB FLASH 100QFP
DigiKey Programmable: Not Verified
Number of I/O: 83
Supplier Device Package: 100-QFP (14x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
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| MB90F809SPF-G-JNE1 |
|
Виробник: Infineon Technologies
Description: IC MCU 16BIT 192KB 100BQFP
DigiKey Programmable: Not Verified
Number of I/O: 70
Supplier Device Package: 100-QFP (14x20)
Peripherals: LCD, PWM, WDT
Connectivity: I2C, Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Core Size: 16-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-16LX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 10K x 8
Program Memory Size: 192KB (192K x 8)
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Bulk
Description: IC MCU 16BIT 192KB 100BQFP
DigiKey Programmable: Not Verified
Number of I/O: 70
Supplier Device Package: 100-QFP (14x20)
Peripherals: LCD, PWM, WDT
Connectivity: I2C, Serial I/O, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Core Size: 16-Bit
Data Converters: A/D 12x8/10b
Core Processor: F²MC-16LX
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 10K x 8
Program Memory Size: 192KB (192K x 8)
Speed: 25MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Bulk
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| GATELEADL500PB20G1KXPSA1 |
|
Виробник: Infineon Technologies
Description: CABLE PWR ENTRY 2WIRE 0.5M
Packaging: Tray
Type: Power Contacts to Wire
Number of Lines: 2
Cable Length - Unexposed: 1.64' (0.50m) 19.69"
Description: CABLE PWR ENTRY 2WIRE 0.5M
Packaging: Tray
Type: Power Contacts to Wire
Number of Lines: 2
Cable Length - Unexposed: 1.64' (0.50m) 19.69"
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| CY8C4147AZE-S295 |
|
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 743.14 грн |
| 10+ | 540.40 грн |
| 25+ | 496.56 грн |
| 160+ | 408.99 грн |
| 320+ | 394.23 грн |
| 480+ | 386.84 грн |
| 960+ | 369.84 грн |