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TLI49632MXTMA1 Infineon Technologies Infineon-TLI4963-2M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287eddf3f27cd Description: MAG SWITCH POS/CURRENT SENSOR
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
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IPD95R450PFD7ATMA1 IPD95R450PFD7ATMA1 Infineon Technologies Infineon-IPD95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81ae03fc0181f712e8992e5b Description: MOSFET N-CH 950V 13.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
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IPD95R450PFD7ATMA1 IPD95R450PFD7ATMA1 Infineon Technologies Infineon-IPD95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81ae03fc0181f712e8992e5b Description: MOSFET N-CH 950V 13.3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
на замовлення 2456 шт:
термін постачання 21-31 дні (днів)
2+249.83 грн
10+156.74 грн
100+108.87 грн
500+82.96 грн
1000+76.79 грн
Мінімальне замовлення: 2
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IRGB4715DPBF IRGB4715DPBF Infineon Technologies IRG%28B%2CS%294715DPbF.pdf Description: IGBT 650V 21A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/100ns
Switching Energy: 200µJ (on), 90µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 100 W
на замовлення 389 шт:
термін постачання 21-31 дні (днів)
204+105.53 грн
Мінімальне замовлення: 204
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IRGB4715DPBF IRGB4715DPBF Infineon Technologies IRG%28B%2CS%294715DPbF.pdf Description: IGBT 650V 21A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/100ns
Switching Energy: 200µJ (on), 90µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 100 W
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IRGB4615DPBF IRGB4615DPBF Infineon Technologies IRGx4615DPbF.pdf Description: IGBT 600V 23A 99W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
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CYPD6227-96BZXI CYPD6227-96BZXI Infineon Technologies Infineon-EZ-PD_CCG6DF_CCG6SF_USB_Type-C_Port_Controller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8e2c571be Description: CCG6
Packaging: Tray
Package / Case: 96-VFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.75V ~ 5.5V
Program Memory Type: FLASH (64kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 96-BGA (6x6)
Number of I/O: 19
DigiKey Programmable: Not Verified
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IMBG120R012M2HXTMA1 IMBG120R012M2HXTMA1 Infineon Technologies infineon-imbg120r012m2h-datasheet-en.pdf Description: SICFET N-CH 1200V 144A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 56.7A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+1017.61 грн
Мінімальне замовлення: 1000
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IMBG120R012M2HXTMA1 IMBG120R012M2HXTMA1 Infineon Technologies infineon-imbg120r012m2h-datasheet-en.pdf Description: SICFET N-CH 1200V 144A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 56.7A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
на замовлення 1820 шт:
термін постачання 21-31 дні (днів)
1+1715.64 грн
10+1199.39 грн
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CY9AF141LAPMC1-GNE2 CY9AF141LAPMC1-GNE2 Infineon Technologies Description: IC MCU 32BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
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IAUCN10S7N021ATMA1 IAUCN10S7N021ATMA1 Infineon Technologies Infineon-IAUCN10S7N021-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ee1ea5e6c031a Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V
Qualification: AEC-Q101
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IAUCN10S7N021ATMA1 IAUCN10S7N021ATMA1 Infineon Technologies Infineon-IAUCN10S7N021-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ee1ea5e6c031a Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V
Qualification: AEC-Q101
на замовлення 1137 шт:
термін постачання 21-31 дні (днів)
2+323.71 грн
10+205.65 грн
100+145.59 грн
500+126.32 грн
Мінімальне замовлення: 2
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BAV70UE6359HTMA1 BAV70UE6359HTMA1 Infineon Technologies bav70series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c0ba40e041d Description: DIODE ARRAY GP 80V 100MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Qualification: AEC-Q101
на замовлення 230000 шт:
термін постачання 21-31 дні (днів)
8955+2.15 грн
Мінімальне замовлення: 8955
В кошику  од. на суму  грн.
CY7C1360S-200BGCT CY7C1360S-200BGCT Infineon Technologies Description: IC SRAM 9MBIT PARALLEL 119PBGA
Packaging: Tape & Reel (TR)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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CY7C1360S-200AXI CY7C1360S-200AXI Infineon Technologies Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.14V ~ 3.63V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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S29GL512S11TFB023 Infineon Technologies Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: PNOR
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 64M x 8
Qualification: AEC-Q100
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IDWD80G200C5XKSA1 IDWD80G200C5XKSA1 Infineon Technologies IDWD80G200C5XKSA1.pdf Description: DIODE SIC 2000V 214A PGTO2472U01
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 9100pF @ 1V, 100kHz
Current - Average Rectified (Io): 214A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 80 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 2 kV
на замовлення 123 шт:
термін постачання 21-31 дні (днів)
1+3659.53 грн
30+2487.58 грн
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CY241V8ASXC-16 CY241V8ASXC-16 Infineon Technologies Description: IC CLOCK GEN MPEG W/VCXO 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Clock Generator
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
на замовлення 26176 шт:
термін постачання 21-31 дні (днів)
198+117.65 грн
Мінімальне замовлення: 198
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S26KL128SDABHI020 S26KL128SDABHI020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 246 шт:
термін постачання 21-31 дні (днів)
1+560.26 грн
10+417.54 грн
25+386.98 грн
100+331.67 грн
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FZ1000R65KE4NPSA1 FZ1000R65KE4NPSA1 Infineon Technologies Description: IHV IHM T
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: DC
Configuration: Single
Operating Temperature: -50°C ~ 135°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 1kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1 kA
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 3600000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 245000 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+238496.37 грн
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CY7C1061GE-10BVXIT CY7C1061GE-10BVXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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TLE4973R120T5S0001XUMA1 TLE4973R120T5S0001XUMA1 Infineon Technologies TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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TLE4973R120T5S0001XUMA1 TLE4973R120T5S0001XUMA1 Infineon Technologies TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
на замовлення 1510 шт:
термін постачання 21-31 дні (днів)
1+413.35 грн
5+358.07 грн
10+343.13 грн
25+305.38 грн
50+293.97 грн
100+283.52 грн
500+263.38 грн
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IPSA70R750P7SAKMA1 IPSA70R750P7SAKMA1 Infineon Technologies Infineon-IPSA70R750P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4da569fd138b Description: MOSFET N-CH 700V 6.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
на замовлення 2832 шт:
термін постачання 21-31 дні (днів)
1019+23.09 грн
Мінімальне замовлення: 1019
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CY3272 CY3272 Infineon Technologies Description: EVAL BOARD FOR CY8CPLC10
Packaging: Box
Function: Transceiver, Powerline Communication
Type: Interface
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: CY8CPLC10
Supplied Contents: Board(s), Cable(s), Accessories
Secondary Attributes: On-Board LEDs
Embedded: No
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CY3273 CY3273 Infineon Technologies CY3273.pdf Description: EVAL BOARD FOR CY8CPLC10
Packaging: Box
Function: Transceiver, Powerline Communication
Type: Interface
Contents: Board(s), Cable(s), Power Supply, Accessories
Utilized IC / Part: CY8CPLC10
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Secondary Attributes: On-Board LEDs
Embedded: No
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IR3565BMTRPBF IR3565BMTRPBF Infineon Technologies IR3565B.pdf Description: IC REG CTRLR INTEL 2OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Supplier Device Package: 48-QFN (6x6)
на замовлення 11824 шт:
термін постачання 21-31 дні (днів)
82+291.52 грн
Мінімальне замовлення: 82
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AIMDQ75R008M1HXUMA1 AIMDQ75R008M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R008M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b2326afd9327b Description: AUTOMOTIVE_SICMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 90.3A, 18V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6135 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R008M1HXUMA1 AIMDQ75R008M1HXUMA1 Infineon Technologies Infineon-AIMDQ75R008M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b2326afd9327b Description: AUTOMOTIVE_SICMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 90.3A, 18V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6135 pF @ 500 V
Qualification: AEC-Q101
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
1+2948.21 грн
10+2110.08 грн
100+1888.31 грн
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TLD55012ADBPREREFTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLD5501-2
Features: Dimmable
Packaging: Bulk
Voltage - Output: 0V ~ 5V
Voltage - Input: 8V ~ 26V
Current - Output / Channel: 12A, 12A
Utilized IC / Part: TLD5501-2
Supplied Contents: Board(s)
Outputs and Type: 2, Non-Isolated
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CYPD7291-68LDXST CYPD7291-68LDXST Infineon Technologies Infineon-CYPD7291_EZ-PD_CCG7D_Automotive_USB_Type-C_and_Buck-boost_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c85ecb34701863803b0161a99 Description: CCG7D
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Number of I/O: 19
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+344.35 грн
Мінімальне замовлення: 2000
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IRFSL3806PBF IRFSL3806PBF Infineon Technologies irfs3806pbf.pdf?fileId=5546d462533600a401535636ace4217a Description: MOSFET N-CH 60V 43A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
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TLD5097ELXUMA1 TLD5097ELXUMA1 Infineon Technologies Infineon-TLD5097EL-DS-v01_00-EN.pdf?fileId=db3a3043442f820901443eb1f6925bc8 Description: IC LED DRIVER CTRLR PWM 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14-3
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 45V
Grade: Automotive
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BSM200GA120DLCSHOSA1 Infineon Technologies Description: IGBT MOD 1200V 370A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
на замовлення 285 шт:
термін постачання 21-31 дні (днів)
2+12980.60 грн
Мінімальне замовлення: 2
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BSM200GA120DLCSHOSA1 Infineon Technologies Description: IGBT MOD 1200V 370A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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BSM200GB170DLCHOSA1 Infineon Technologies Description: IGBT MOD 1700V 400A 1660W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 15 nF @ 25 V
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BG 5130R E6327 BG 5130R E6327 Infineon Technologies BG5130R.pdf Description: RF MOSFET 3V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 3 V
Current - Test: 10 mA
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EVALPMG1S3DUALDRPTOBO1 EVALPMG1S3DUALDRPTOBO1 Infineon Technologies Infineon-CYPM13xx_EZ-PD_PMG1-S3_Power_delivery_MCU_Gen1-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3 Description: EVALPMG1S3DUALDRPTOBO1
Packaging: Box
Function: USB PD Controller (Power Delivery)
Type: Power Management
Utilized IC / Part: EZ-PD PMG1-S3
Supplied Contents: Board(s)
Embedded: Yes, MCU
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D3501N36TXPSA1 D3501N36TXPSA1 Infineon Technologies Infineon-D3501N-DS-v8_1-en_de.pdf?fileId=db3a304412b407950112b430c33f51d8 Description: DIODE GEN PURP 4870A D12035K-1
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 4870A
Supplier Device Package: BG-D12035K-1
Operating Temperature - Junction: -40°C ~ 160°C
Current - Reverse Leakage @ Vr: 100 mA @ 4200 V
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CY7C1041BN-20ZSXA CY7C1041BN-20ZSXA Infineon Technologies download Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Bulk
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1750 шт:
термін постачання 21-31 дні (днів)
35+659.77 грн
Мінімальне замовлення: 35
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CY7C1041BNV33L-15ZXC CY7C1041BNV33L-15ZXC Infineon Technologies CY7C1041BNV33.pdf Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY8C4125PVE-S432T CY8C4125PVE-S432T Infineon Technologies Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 24
Qualification: AEC-Q100
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S29GL064N90FFIS20 S29GL064N90FFIS20 Infineon Technologies Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S25FL164K0XBHIS20 S25FL164K0XBHIS20 Infineon Technologies S25FL116K_132K_164K__RevH_5-19-17.pdf Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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IPZ65R045C7XKSA1 IPZ65R045C7XKSA1 Infineon Technologies DS_IPZ65R045C7_2_0.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30433e5a5024013e6a50664963da Description: MOSFET N-CH 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
на замовлення 419 шт:
термін постачання 21-31 дні (днів)
1+825.86 грн
30+477.51 грн
120+407.81 грн
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CY3253-BLDC Infineon Technologies authorization.oauth2?client_id=myInfineon&redirect_uri=https%3A%2F%2Fwww.infineon.com%2Foauth2%2Fcallback&response_type=code&scope=openid+profile+email+ifxScope&state=cbb649df198e47e1c1002f43fc18e2b9%3A%2Fdgdlac%2FInfineon-Kit_ Description: EVAL BOARD FOR CY8C24533
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s), Power Supply, Accessories
Utilized IC / Part: CY8C24533
Supplied Contents: Board(s), Power Supply, Accessories
Primary Attributes: Motors (BLDC)
Secondary Attributes: Graphical User Interface (GUI)
Embedded: Yes, Other
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IPFH6N03LA G IPFH6N03LA G Infineon Technologies IPDH6N03LAG_Rev1.4.pdf Description: MOSFET N-CH 25V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TO252-3-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 15 V
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PVI1050NSPBFHLLA1 PVI1050NSPBFHLLA1 Infineon Technologies Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca Description: OPTOISO 2.5KV 2CH PHVOLT 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 90µs, 220µs (Max)
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
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PVI1050NPBFHKLA1 PVI1050NPBFHKLA1 Infineon Technologies Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca Description: OPTOISO 2.5KV 2CH PHVOLT 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-DIP
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 90µs, 220µs (Max)
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
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PVI1050NSTPBFHUMA1 PVI1050NSTPBFHUMA1 Infineon Technologies Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca Description: OPTOISO 2.5KV 2CH PHVOLT 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 90µs, 220µs (Max)
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
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IM72D128VV01XTMA1 IM72D128VV01XTMA1 Infineon Technologies Infineon-IM72D128V-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c919c9f9d0191b2ac79c30af8 Description: MIC SDM DIGITAL
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 71.5dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Voltage - Rated: 1.8 V
Current - Supply: 525 µA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 15 kHz
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IPP050N03LF2SAKSA1 IPP050N03LF2SAKSA1 Infineon Technologies Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466 Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.95mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
на замовлення 784 шт:
термін постачання 21-31 дні (днів)
4+91.30 грн
10+54.99 грн
100+36.36 грн
500+26.59 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY8C4125AXI-M445 CY8C4125AXI-M445 Infineon Technologies Infineon-PSoC_4_PSoC_4100M_Family-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd541f479e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Number of I/O: 51
DigiKey Programmable: Not Verified
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IPI70N12S3L12AKSA1 IPI70N12S3L12AKSA1 Infineon Technologies IPx70N12S3L-12.pdf Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
Qualification: AEC-Q101
на замовлення 19000 шт:
термін постачання 21-31 дні (днів)
218+98.93 грн
Мінімальне замовлення: 218
В кошику  од. на суму  грн.
IRG4BC15UD-LPBF IRG4BC15UD-LPBF Infineon Technologies irg4bc15ud-spbf.pdf?fileId=5546d462533600a40153563f17c9224c Description: IGBT 600V 14A 49W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 240µJ (on), 260µJ (off)
Test Condition: 480V, 7.8A, 75Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 42 A
Power - Max: 49 W
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CY8C4127AZA-S445 CY8C4127AZA-S445 Infineon Technologies Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
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CY9AFA41NBPQC-G-JNE2 CY9AFA41NBPQC-G-JNE2 Infineon Technologies Infineon-CY9AA40NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0465565d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 96KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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CY9AFA42NBPQC-G-JNE2 CY9AFA42NBPQC-G-JNE2 Infineon Technologies Infineon-CY9AA40NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0465565d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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CY9AFA44NBPQC-G-JNE2 CY9AFA44NBPQC-G-JNE2 Infineon Technologies Infineon-CY9AA40NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0465565d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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CY9AFA41NAPQC-G-JNE2 Infineon Technologies Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
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TLI49632MXTMA1 Infineon-TLI4963-2M-DS-v01_00-EN.pdf?fileId=5546d462525dbac4015287eddf3f27cd
Виробник: Infineon Technologies
Description: MAG SWITCH POS/CURRENT SENSOR
Packaging: Tape & Reel (TR)
Grade: Automotive
Qualification: AEC-Q100
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IPD95R450PFD7ATMA1 Infineon-IPD95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81ae03fc0181f712e8992e5b
IPD95R450PFD7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 13.3A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
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IPD95R450PFD7ATMA1 Infineon-IPD95R450PFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c81ae03fc0181f712e8992e5b
IPD95R450PFD7ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 13.3A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
на замовлення 2456 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+249.83 грн
10+156.74 грн
100+108.87 грн
500+82.96 грн
1000+76.79 грн
Мінімальне замовлення: 2
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IRGB4715DPBF IRG%28B%2CS%294715DPbF.pdf
IRGB4715DPBF
Виробник: Infineon Technologies
Description: IGBT 650V 21A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/100ns
Switching Energy: 200µJ (on), 90µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 100 W
на замовлення 389 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
204+105.53 грн
Мінімальне замовлення: 204
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IRGB4715DPBF IRG%28B%2CS%294715DPbF.pdf
IRGB4715DPBF
Виробник: Infineon Technologies
Description: IGBT 650V 21A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/100ns
Switching Energy: 200µJ (on), 90µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 30 nC
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 100 W
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IRGB4615DPBF IRGx4615DPbF.pdf
IRGB4615DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 23A 99W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 30ns/95ns
Switching Energy: 70µJ (on), 145µJ (off)
Test Condition: 400V, 8A, 47Ohm, 15V
Gate Charge: 19 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 99 W
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CYPD6227-96BZXI Infineon-EZ-PD_CCG6DF_CCG6SF_USB_Type-C_Port_Controller-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8e2c571be
CYPD6227-96BZXI
Виробник: Infineon Technologies
Description: CCG6
Packaging: Tray
Package / Case: 96-VFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.75V ~ 5.5V
Program Memory Type: FLASH (64kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 96-BGA (6x6)
Number of I/O: 19
DigiKey Programmable: Not Verified
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IMBG120R012M2HXTMA1 infineon-imbg120r012m2h-datasheet-en.pdf
IMBG120R012M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 144A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 56.7A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+1017.61 грн
Мінімальне замовлення: 1000
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IMBG120R012M2HXTMA1 infineon-imbg120r012m2h-datasheet-en.pdf
IMBG120R012M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 144A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 56.7A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
на замовлення 1820 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1715.64 грн
10+1199.39 грн
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CY9AF141LAPMC1-GNE2
CY9AF141LAPMC1-GNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, I2C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (10x10)
Number of I/O: 51
DigiKey Programmable: Not Verified
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IAUCN10S7N021ATMA1 Infineon-IAUCN10S7N021-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ee1ea5e6c031a
IAUCN10S7N021ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V
Qualification: AEC-Q101
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IAUCN10S7N021ATMA1 Infineon-IAUCN10S7N021-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8e7ead30018ee1ea5e6c031a
IAUCN10S7N021ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V
Qualification: AEC-Q101
на замовлення 1137 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+323.71 грн
10+205.65 грн
100+145.59 грн
500+126.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BAV70UE6359HTMA1 bav70series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141c0ba40e041d
BAV70UE6359HTMA1
Виробник: Infineon Technologies
Description: DIODE ARRAY GP 80V 100MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Supplier Device Package: PG-SC74-6
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 150 nA @ 70 V
Qualification: AEC-Q101
на замовлення 230000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8955+2.15 грн
Мінімальне замовлення: 8955
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CY7C1360S-200BGCT
CY7C1360S-200BGCT
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 119PBGA
Packaging: Tape & Reel (TR)
Package / Case: 119-BGA
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 119-PBGA (14x22)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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CY7C1360S-200AXI
CY7C1360S-200AXI
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3.14V ~ 3.63V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3 ns
Memory Organization: 256K x 36
DigiKey Programmable: Not Verified
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S29GL512S11TFB023 Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
Виробник: Infineon Technologies
Description: PNOR
Packaging: Tape & Reel (TR)
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 64M x 8
Qualification: AEC-Q100
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IDWD80G200C5XKSA1 IDWD80G200C5XKSA1.pdf
IDWD80G200C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIC 2000V 214A PGTO2472U01
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 9100pF @ 1V, 100kHz
Current - Average Rectified (Io): 214A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 80 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 2 kV
на замовлення 123 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3659.53 грн
30+2487.58 грн
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CY241V8ASXC-16
CY241V8ASXC-16
Виробник: Infineon Technologies
Description: IC CLOCK GEN MPEG W/VCXO 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Clock Generator
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
на замовлення 26176 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
198+117.65 грн
Мінімальне замовлення: 198
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S26KL128SDABHI020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KL128SDABHI020
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 246 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+560.26 грн
10+417.54 грн
25+386.98 грн
100+331.67 грн
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FZ1000R65KE4NPSA1
FZ1000R65KE4NPSA1
Виробник: Infineon Technologies
Description: IHV IHM T
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: DC
Configuration: Single
Operating Temperature: -50°C ~ 135°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 1kA
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1 kA
Voltage - Collector Emitter Breakdown (Max): 6500 V
Power - Max: 3600000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 245000 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+238496.37 грн
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CY7C1061GE-10BVXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE-10BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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TLE4973R120T5S0001XUMA1 TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf
TLE4973R120T5S0001XUMA1
Виробник: Infineon Technologies
Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
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TLE4973R120T5S0001XUMA1 TLE4973-yyyyT5-S0001_Rev1.10_11-30-23.pdf
TLE4973R120T5S0001XUMA1
Виробник: Infineon Technologies
Description: CURRENT SENSOR HE PG-TISON-8-6
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Output: Analog Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 5.5V
Sensor Type: Hall Effect
For Measuring: DC
Current - Supply (Max): 25mA
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
на замовлення 1510 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+413.35 грн
5+358.07 грн
10+343.13 грн
25+305.38 грн
50+293.97 грн
100+283.52 грн
500+263.38 грн
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IPSA70R750P7SAKMA1 Infineon-IPSA70R750P7S-DS-v02_00-EN.pdf?fileId=5546d4625f2e26bc015f4da569fd138b
IPSA70R750P7SAKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 6.5A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 1.4A, 10V
Power Dissipation (Max): 34.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
на замовлення 2832 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1019+23.09 грн
Мінімальне замовлення: 1019
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CY3272
CY3272
Виробник: Infineon Technologies
Description: EVAL BOARD FOR CY8CPLC10
Packaging: Box
Function: Transceiver, Powerline Communication
Type: Interface
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: CY8CPLC10
Supplied Contents: Board(s), Cable(s), Accessories
Secondary Attributes: On-Board LEDs
Embedded: No
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CY3273 CY3273.pdf
CY3273
Виробник: Infineon Technologies
Description: EVAL BOARD FOR CY8CPLC10
Packaging: Box
Function: Transceiver, Powerline Communication
Type: Interface
Contents: Board(s), Cable(s), Power Supply, Accessories
Utilized IC / Part: CY8CPLC10
Supplied Contents: Board(s), Cable(s), Power Supply, Accessories
Secondary Attributes: On-Board LEDs
Embedded: No
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IR3565BMTRPBF IR3565B.pdf
IR3565BMTRPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR INTEL 2OUT 48QFN
Packaging: Bulk
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -40°C ~ 85°C
Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Supplier Device Package: 48-QFN (6x6)
на замовлення 11824 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
82+291.52 грн
Мінімальне замовлення: 82
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AIMDQ75R008M1HXUMA1 Infineon-AIMDQ75R008M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b2326afd9327b
AIMDQ75R008M1HXUMA1
Виробник: Infineon Technologies
Description: AUTOMOTIVE_SICMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 90.3A, 18V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6135 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R008M1HXUMA1 Infineon-AIMDQ75R008M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8afe5bd0018b2326afd9327b
AIMDQ75R008M1HXUMA1
Виробник: Infineon Technologies
Description: AUTOMOTIVE_SICMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 90.3A, 18V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6135 pF @ 500 V
Qualification: AEC-Q101
на замовлення 490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2948.21 грн
10+2110.08 грн
100+1888.31 грн
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TLD55012ADBPREREFTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLD5501-2
Features: Dimmable
Packaging: Bulk
Voltage - Output: 0V ~ 5V
Voltage - Input: 8V ~ 26V
Current - Output / Channel: 12A, 12A
Utilized IC / Part: TLD5501-2
Supplied Contents: Board(s)
Outputs and Type: 2, Non-Isolated
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CYPD7291-68LDXST Infineon-CYPD7291_EZ-PD_CCG7D_Automotive_USB_Type-C_and_Buck-boost_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c85ecb34701863803b0161a99
CYPD7291-68LDXST
Виробник: Infineon Technologies
Description: CCG7D
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Number of I/O: 19
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+344.35 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IRFSL3806PBF irfs3806pbf.pdf?fileId=5546d462533600a401535636ace4217a
IRFSL3806PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 43A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
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TLD5097ELXUMA1 Infineon-TLD5097EL-DS-v01_00-EN.pdf?fileId=db3a3043442f820901443eb1f6925bc8
TLD5097ELXUMA1
Виробник: Infineon Technologies
Description: IC LED DRIVER CTRLR PWM 14SSOP
Packaging: Cut Tape (CT)
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz ~ 500kHz
Type: DC DC Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Internal Switch(s): No
Topology: Flyback, SEPIC, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: PG-SSOP-14-3
Dimming: Analog, PWM
Voltage - Supply (Min): 4.5V
Voltage - Supply (Max): 45V
Grade: Automotive
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BSM200GA120DLCSHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 370A 1450W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
на замовлення 285 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+12980.60 грн
Мінімальне замовлення: 2
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BSM200GA120DLCSHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 370A 1450W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 370 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1450 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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BSM200GB170DLCHOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 400A 1660W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Module
Current - Collector (Ic) (Max): 400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1660 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 15 nF @ 25 V
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BG 5130R E6327 BG5130R.pdf
BG 5130R E6327
Виробник: Infineon Technologies
Description: RF MOSFET 3V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-VSSOP, SC-88, SOT-363
Current Rating (Amps): 25mA
Mounting Type: Surface Mount
Frequency: 800MHz
Configuration: 2 N-Channel (Dual)
Gain: 24dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 1.3dB
Supplier Device Package: PG-SOT363-PO
Voltage - Rated: 8 V
Voltage - Test: 3 V
Current - Test: 10 mA
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EVALPMG1S3DUALDRPTOBO1 Infineon-CYPM13xx_EZ-PD_PMG1-S3_Power_delivery_MCU_Gen1-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3
EVALPMG1S3DUALDRPTOBO1
Виробник: Infineon Technologies
Description: EVALPMG1S3DUALDRPTOBO1
Packaging: Box
Function: USB PD Controller (Power Delivery)
Type: Power Management
Utilized IC / Part: EZ-PD PMG1-S3
Supplied Contents: Board(s)
Embedded: Yes, MCU
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D3501N36TXPSA1 Infineon-D3501N-DS-v8_1-en_de.pdf?fileId=db3a304412b407950112b430c33f51d8
D3501N36TXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 4870A D12035K-1
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 4870A
Supplier Device Package: BG-D12035K-1
Operating Temperature - Junction: -40°C ~ 160°C
Current - Reverse Leakage @ Vr: 100 mA @ 4200 V
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CY7C1041BN-20ZSXA download
CY7C1041BN-20ZSXA
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Bulk
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
на замовлення 1750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
35+659.77 грн
Мінімальне замовлення: 35
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CY7C1041BNV33L-15ZXC CY7C1041BNV33.pdf
CY7C1041BNV33L-15ZXC
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 256K x 16
DigiKey Programmable: Not Verified
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CY8C4125PVE-S432T
CY8C4125PVE-S432T
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Grade: Automotive
Number of I/O: 24
Qualification: AEC-Q100
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S29GL064N90FFIS20 Infineon-S29GL064N_S29GL032N_64_Mbit_32_Mbit_3_V_Page_Mode_MirrorBit_Flash-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed556fd548b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fi
S29GL064N90FFIS20
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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S25FL164K0XBHIS20 S25FL116K_132K_164K__RevH_5-19-17.pdf
S25FL164K0XBHIS20
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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IPZ65R045C7XKSA1 DS_IPZ65R045C7_2_0.pdf?folderId=db3a30431ff98815012019af55de3f2c&fileId=db3a30433e5a5024013e6a50664963da
IPZ65R045C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.9A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.25mA
Supplier Device Package: PG-TO247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 400 V
на замовлення 419 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+825.86 грн
30+477.51 грн
120+407.81 грн
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CY3253-BLDC authorization.oauth2?client_id=myInfineon&redirect_uri=https%3A%2F%2Fwww.infineon.com%2Foauth2%2Fcallback&response_type=code&scope=openid+profile+email+ifxScope&state=cbb649df198e47e1c1002f43fc18e2b9%3A%2Fdgdlac%2FInfineon-Kit_
Виробник: Infineon Technologies
Description: EVAL BOARD FOR CY8C24533
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s), Power Supply, Accessories
Utilized IC / Part: CY8C24533
Supplied Contents: Board(s), Power Supply, Accessories
Primary Attributes: Motors (BLDC)
Secondary Attributes: Graphical User Interface (GUI)
Embedded: Yes, Other
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IPFH6N03LA G IPDH6N03LAG_Rev1.4.pdf
IPFH6N03LA G
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 50A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2V @ 30µA
Supplier Device Package: PG-TO252-3-23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2390 pF @ 15 V
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PVI1050NSPBFHLLA1 Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca
PVI1050NSPBFHLLA1
Виробник: Infineon Technologies
Description: OPTOISO 2.5KV 2CH PHVOLT 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 90µs, 220µs (Max)
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
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PVI1050NPBFHKLA1 Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca
PVI1050NPBFHKLA1
Виробник: Infineon Technologies
Description: OPTOISO 2.5KV 2CH PHVOLT 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Photovoltaic
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-DIP
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 90µs, 220µs (Max)
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
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PVI1050NSTPBFHUMA1 Infineon-PVI1050N-DataSheet-v02_00-EN.pdf?fileId=5546d462602a9dc801607b6ff00c5cca
PVI1050NSTPBFHUMA1
Виробник: Infineon Technologies
Description: OPTOISO 2.5KV 2CH PHVOLT 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Input Type: DC
Current - Output / Channel: 5µA
Voltage - Isolation: 2500Vrms
Supplier Device Package: 8-SMD
Voltage - Output (Max): 5V
Turn On / Turn Off Time (Typ): 90µs, 220µs (Max)
Number of Channels: 2
Current - DC Forward (If) (Max): 50 mA
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IM72D128VV01XTMA1 Infineon-IM72D128V-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c919c9f9d0191b2ac79c30af8
IM72D128VV01XTMA1
Виробник: Infineon Technologies
Description: MIC SDM DIGITAL
Packaging: Tape & Reel (TR)
Output Type: Digital, PDM
Size / Dimension: 0.157" L x 0.118" W (4.00mm x 3.00mm)
Sensitivity: -36dB ±1dB @ 94dB SPL
Shape: Rectangular
Type: MEMS (Silicon)
S/N Ratio: 71.5dB
Termination: Solder Pads
Direction: Omnidirectional
Port Location: Bottom
Height (Max): 0.051" (1.30mm)
Voltage - Rated: 1.8 V
Current - Supply: 525 µA
Voltage Range: 1.62 V ~ 3.6 V
Frequency Range: 10 Hz ~ 15 kHz
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IPP050N03LF2SAKSA1 Infineon-IPP050N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101902fdfcd342466
IPP050N03LF2SAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.95mOhm @ 30A, 10V
Power Dissipation (Max): 3.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
на замовлення 784 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+91.30 грн
10+54.99 грн
100+36.36 грн
500+26.59 грн
Мінімальне замовлення: 4
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CY8C4125AXI-M445 Infineon-PSoC_4_PSoC_4100M_Family-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd541f479e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C4125AXI-M445
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; 2xIDAC
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Number of I/O: 51
DigiKey Programmable: Not Verified
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IPI70N12S3L12AKSA1 IPx70N12S3L-12.pdf
IPI70N12S3L12AKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12.1mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO262-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
Qualification: AEC-Q101
на замовлення 19000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
218+98.93 грн
Мінімальне замовлення: 218
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IRG4BC15UD-LPBF irg4bc15ud-spbf.pdf?fileId=5546d462533600a40153563f17c9224c
IRG4BC15UD-LPBF
Виробник: Infineon Technologies
Description: IGBT 600V 14A 49W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 7.8A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 17ns/160ns
Switching Energy: 240µJ (on), 260µJ (off)
Test Condition: 480V, 7.8A, 75Ohm, 15V
Gate Charge: 23 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 42 A
Power - Max: 49 W
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CY8C4127AZA-S445
CY8C4127AZA-S445
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
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CY9AFA41NBPQC-G-JNE2 Infineon-CY9AA40NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0465565d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AFA41NBPQC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 96KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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CY9AFA42NBPQC-G-JNE2 Infineon-CY9AA40NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0465565d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AFA42NBPQC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 160KB (160K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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CY9AFA44NBPQC-G-JNE2 Infineon-CY9AA40NB_Series_32_Bit_Arm_Cortex_M3_FM3_Microcontroller-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee0465565d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9AFA44NBPQC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 288KB (288K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 83
DigiKey Programmable: Not Verified
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CY9AFA41NAPQC-G-JNE2
Виробник: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 24x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 100-QFP (14x20)
Number of I/O: 83
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