Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126723) > Сторінка 732 з 2113
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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IPP70N12S311AKSA2 | Infineon Technologies |
Description: MOSFET_(120V 300V)Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 83µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | ||||||||||||
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IPB100N12S305ATMA2 | Infineon Technologies |
Description: MOSFET_(120V 300V)Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 240µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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IPP100N12S305AKSA2 | Infineon Technologies |
Description: MOSFET_(120V 300V)Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 240µA Supplier Device Package: PG-TO220-3-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 7000 шт В кошику од. на суму грн. | ||||||||||||
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D3041N65TXPSA1 | Infineon Technologies |
Description: DIODE GEN PURP 6.5KV 4090APackaging: Tray Package / Case: DO-200AE Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 4090A Operating Temperature - Junction: -40°C ~ 160°C Voltage - DC Reverse (Vr) (Max): 6500 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4000 A Current - Reverse Leakage @ Vr: 100 mA @ 6500 V |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||
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ISA250250N04LMDSXTMA1 | Infineon Technologies |
Description: ISA250250N04LMDSXTMA1Supplier Device Package: PG-DSO-8-920 Vgs(th) (Max) @ Id: 2.7V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 1.4W (Ta), 2.5W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||
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ISA250250N04LMDSXTMA1 | Infineon Technologies |
Description: ISA250250N04LMDSXTMA1Supplier Device Package: PG-DSO-8-920 Vgs(th) (Max) @ Id: 2.7V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 1.4W (Ta), 2.5W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 167 шт: термін постачання 21-31 дні (днів) |
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ESD206B102ELE6327XTMA1 | Infineon Technologies |
Description: TVS DIODE 5.5VWM 9.6VC PGTSLP219Packaging: Bulk Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 12pF @ 1MHz Current - Peak Pulse (10/1000µs): 6A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: PG-TSLP-2-19 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.1V Voltage - Clamping (Max) @ Ipp: 9.6V (Typ) Power Line Protection: No |
на замовлення 2619162 шт: термін постачання 21-31 дні (днів) |
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ETT580N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULEVoltage - Off State: 1.6 kV Current - On State (It (RMS)) (Max): 700 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 586 A Number of SCRs, Diodes: 2 SCRs Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 300 mA Structure: Series Connection - All SCRs Operating Temperature: -40°C ~ 135°C (TC) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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ETT630N16P60HPSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 700A MODULEVoltage - Off State: 1.6 kV Current - On State (It (RMS)) (Max): 700 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 635 A Number of SCRs, Diodes: 2 SCRs Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 300 mA Structure: Series Connection - All SCRs Operating Temperature: -40°C ~ 135°C (TC) Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IRG7PH28UD1PBF | Infineon Technologies |
Description: IGBT 1200V 30A 115W TO247ACPower - Max: 115 W Current - Collector Pulsed (Icm): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 30 A Gate Charge: 90 nC Test Condition: 600V, 15A, 22Ohm, 15V Switching Energy: 543µJ (off) Td (on/off) @ 25°C: -/229ns IGBT Type: Trench Supplier Device Package: TO-247AC Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IRG7PH37K10DPBF | Infineon Technologies |
Description: IGBT 1200V 45A TO-247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 120 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 50ns/240ns Switching Energy: 1mJ (on), 600µJ (off) Test Condition: 600V, 15A, 10Ohm, 15V Gate Charge: 135 nC Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 216 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CY62167G18-55ZXI | Infineon Technologies |
Description: IC SRAM 16MBIT PARALLEL 48TSOP IPackaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 16Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 2.2V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 2M x 8, 1M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 960 шт В кошику од. на суму грн. | ||||||||||||
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AUIRFR5505TRL | Infineon Technologies |
Description: MOSFET P-CH 55V 18A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V Power Dissipation (Max): 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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S29GL256S11DHIV10 | Infineon Technologies |
Description: IC FLASH 256MBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (9x9) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 110 ns Memory Organization: 16M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 520 шт В кошику од. на суму грн. | ||||||||||||
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CY8C4146LQS-S273 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 40QFNPackaging: Tray Package / Case: 40-UFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Speed: 48MHz Program Memory Size: 64KB (64K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 40-QFN (6x6) Grade: Automotive Number of I/O: 34 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
на замовлення 4900 шт: термін постачання 21-31 дні (днів) |
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SAA-XC886-6FFA AC | Infineon Technologies |
Description: IC MCU 8BIT 24KB FLASH 48TQFPPackaging: Tape & Reel (TR) Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 24KB (24K x 8) RAM Size: 1.75K x 8 Operating Temperature: -40°C ~ 140°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: XC800 Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V Connectivity: SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: PG-TQFP-48 Number of I/O: 34 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||
| FS75R12KT3BOSA1 | Infineon Technologies |
Description: LOW POWER ECONOPackaging: Bulk |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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STK14C88-NF45 | Infineon Technologies |
Description: IC NVSRAM 256KBIT PAR 32SOICPackaging: Tube Package / Case: 32-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 32-SOIC Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 44 шт В кошику од. на суму грн. | ||||||||||||
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STK14C88-3NF35 | Infineon Technologies |
Description: IC NVSRAM 256KBIT PAR 32SOICPackaging: Tube Package / Case: 32-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 32-SOIC Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel Access Time: 35 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 44 шт В кошику од. на суму грн. | ||||||||||||
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STK14C88-5L35M | Infineon Technologies |
Description: IC NVSRAM 256KBIT PAR 32PLCCPackaging: Tube Package / Case: 32-LCC (J-Lead) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 32-PLCC (11.43x13.97) Write Cycle Time - Word, Page: 35ns Memory Interface: Parallel Access Time: 35 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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STK14C88-3WF45 | Infineon Technologies |
Description: IC NVSRAM 256KBIT PARALLEL 32DIPPackaging: Tube Package / Case: 32-DIP (0.600", 15.24mm) Mounting Type: Through Hole Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 32-PDIP Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| STK14C88C-1XWI | Infineon Technologies |
Description: IC NVSRAM 256KBIT PAR 32CDIP Packaging: Bulk Package / Case: 32-CDIP (0.300", 7.62mm) Mounting Type: Through Hole Memory Size: 256Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: NVSRAM (Non-Volatile SRAM) Memory Format: NVSRAM Supplier Device Package: 32-CDIP Memory Interface: Parallel Memory Organization: 32K x 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IDWD10G200C5XKSA1 | Infineon Technologies |
Description: DIODE SIC 2000V 35A PGTO247-2U01Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1140pF @ 1V, 100kHz Current - Average Rectified (Io): 35A Supplier Device Package: PG-TO247-2-U01 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 2 kV |
на замовлення 2610 шт: термін постачання 21-31 дні (днів) |
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IDWD25G200C5XKSA1 | Infineon Technologies |
Description: DIODE SIC 2000V 77A PGTO2472U01Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 2850pF @ 1V, 100kHz Current - Average Rectified (Io): 77A Supplier Device Package: PG-TO247-2-U01 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 25 A Current - Reverse Leakage @ Vr: 375 µA @ 2 kV |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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IDWD50G200C5XKSA1 | Infineon Technologies |
Description: DIODE SIC 2000V 140A TO247-2U01Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 5700pF @ 1V, 100kHz Current - Average Rectified (Io): 140A Supplier Device Package: PG-TO247-2-U01 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 50 A Current - Reverse Leakage @ Vr: 750 µA @ 2 kV |
на замовлення 259 шт: термін постачання 21-31 дні (днів) |
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IDYH10G200C5XKSA1 | Infineon Technologies |
Description: DIODE SIC 2000V 35A PGTO247U04 Packaging: Tube Package / Case: TO-247-4 Variant Mounting Type: Through Hole Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1140pF @ 1V, 100kHz Current - Average Rectified (Io): 35A Supplier Device Package: PG-TO247-U04 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A Current - Reverse Leakage @ Vr: 150 µA @ 2000 V |
на замовлення 47 шт: термін постачання 21-31 дні (днів) |
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IDYH50G200C5XKSA1 | Infineon Technologies |
Description: SIC DISCRETE Packaging: Tube |
на замовлення 75 шт: термін постачання 21-31 дні (днів) |
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IRL8114PBF | Infineon Technologies |
Description: IRL8114 - 12V-300V N-CHANNEL POWPackaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V Power Dissipation (Max): 115W (Tc) Vgs(th) (Max) @ Id: 2.25V @ 250µA Supplier Device Package: TO-220AB Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 15 V |
на замовлення 8800 шт: термін постачання 21-31 дні (днів) |
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CY62157G18-55BVXI | Infineon Technologies |
Description: IC SRAM 8MBIT PARALLEL 48VFBGAPackaging: Tray Package / Case: 48-VFBGA Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 48-VFBGA (6x8) Write Cycle Time - Word, Page: 55ns Memory Interface: Parallel Access Time: 55 ns Memory Organization: 512K x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 480 шт В кошику од. на суму грн. | ||||||||||||
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IMT40R036M2HXTMA1 | Infineon Technologies |
Description: SIC-MOSPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 4mA Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
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IMT40R036M2HXTMA1 | Infineon Technologies |
Description: SIC-MOSPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 4mA Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 200 V |
на замовлення 1929 шт: термін постачання 21-31 дні (днів) |
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IMBG40R036M2HXTMA1 | Infineon Technologies |
Description: SIC-MOSPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 4mA Supplier Device Package: PG-TO263-7-11 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 200 V |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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IMBG40R036M2HXTMA1 | Infineon Technologies |
Description: SIC-MOSPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V Power Dissipation (Max): 3.8W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 4mA Supplier Device Package: PG-TO263-7-11 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 400 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 200 V |
на замовлення 913 шт: термін постачання 21-31 дні (днів) |
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CY7C109B-15VXC | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32SOJPackaging: Tube Package / Case: 32-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOJ Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1150 шт В кошику од. на суму грн. | ||||||||||||
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CY7C109B-15ZC | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32TSOP IPackaging: Bag Package / Case: 32-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP I Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 780 шт В кошику од. на суму грн. | ||||||||||||
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CY7C109BN-12ZXC | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32TSOP IPackaging: Tray Package / Case: 32-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP I Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Access Time: 12 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 780 шт В кошику од. на суму грн. | ||||||||||||
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CY7C109B-15VC | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32SOJPackaging: Tube Package / Case: 32-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOJ Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 15 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2070 шт В кошику од. на суму грн. | ||||||||||||
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CY7C109B-20ZXC | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32TSOP I Packaging: Bag Package / Case: 32-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP I Write Cycle Time - Word, Page: 20ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1560 шт В кошику од. на суму грн. | ||||||||||||
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CY7C109B-20ZC | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32TSOP IPackaging: Bag Package / Case: 32-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-TSOP I Write Cycle Time - Word, Page: 20ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 780 шт В кошику од. на суму грн. | ||||||||||||
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cy7c109b-12vc | Infineon Technologies |
Description: IC SRAM 1MBIT PARALLEL 32SOJPackaging: Tube Package / Case: 32-BSOJ (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 32-SOJ Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Access Time: 12 ns Memory Organization: 128K x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MB9DF126BPMC-GSK5E2 | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 176LQFPPackaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 128MHz Program Memory Size: 2MB (2M x 8) RAM Size: 208K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: ARM® Cortex®-R4 Data Converters: A/D 50x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 176-LQFP (24x24) Number of I/O: 141 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 40 шт В кошику од. на суму грн. | ||||||||||||
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MB9DF126PMC-GSK5E2 | Infineon Technologies |
Description: IC MCU 32BIT 2MB FLASH 176LQFPPackaging: Tray Package / Case: 176-LQFP Mounting Type: Surface Mount Speed: 128MHz Program Memory Size: 2MB (2M x 8) RAM Size: 208K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: ARM® Cortex®-R4 Data Converters: A/D 50x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART Peripherals: DMA, I2S, LVD, POR, PWM, WDT Supplier Device Package: 176-LQFP (24x24) Number of I/O: 141 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 80 шт В кошику од. на суму грн. | ||||||||||||
| CY9DF566MAEEQ-GTE1 | Infineon Technologies |
Description: IC MCU 32B 2.25MB FLASH 208TEQFP Packaging: Tray Package / Case: 208-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 2.25MB (2.25M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: Arm® Cortex®-R5F Data Converters: A/D 40x12b; D/A 2x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V Connectivity: CANbus, CSIO, FlexRay, LINbus, SPI, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 208-TEQFP (28x28) Number of I/O: 125 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | |||||||||||||
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TLE92633BQXXUMA2 | Infineon Technologies |
Description: OPTIREG SYST BASIS CHIPSPackaging: Cut Tape (CT) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 28V Applications: System Basis Chip Current - Supply: 3.5mA Supplier Device Package: PG-VQFN-48-79 |
на замовлення 4963 шт: термін постачання 21-31 дні (днів) |
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| BSM10GD120DN2E3224BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO2A-211 Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Full Bridge Operating Temperature: 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A NTC Thermistor: No Supplier Device Package: AG-ECONO2B Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 80 W Current - Collector Cutoff (Max): 400 µA Input Capacitance (Cies) @ Vce: 530 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| FS150R12N3T7B11BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: AG-ECONO3B IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 12 µA Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 10 шт В кошику од. на суму грн. | |||||||||||||
| FS150R12KT4PBPSA2 | Infineon Technologies |
Description: LOW POWER ECONO Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A NTC Thermistor: Yes IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 150 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 750 W Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 9350 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | |||||||||||||
| FS150R12N3T4PB81BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | |||||||||||||
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IGD03N120S7ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 10A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/89ns Switching Energy: 210µJ (on), 160µJ (off) Test Condition: 600V, 3A, 60Ohm, 15V Gate Charge: 24 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 9 A Power - Max: 45 W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
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IGD03N120S7ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 10A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19ns/89ns Switching Energy: 210µJ (on), 160µJ (off) Test Condition: 600V, 3A, 60Ohm, 15V Gate Charge: 24 nC Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 9 A Power - Max: 45 W |
на замовлення 998 шт: термін постачання 21-31 дні (днів) |
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S29GL01GT10FHI030 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGAPackaging: Tray Package / Case: 64-LBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Memory Format: FLASH Supplier Device Package: 64-FBGA (13x11) Write Cycle Time - Word, Page: 60ns Memory Interface: Parallel Access Time: 100 ns Memory Organization: 128M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 360 шт В кошику од. на суму грн. | ||||||||||||
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TLE4262GMXUMA2 | Infineon Technologies |
Description: OPTIREG LINEARPackaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 50 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: PG-DSO-14 Voltage - Output (Min/Fixed): 5V Control Features: Reset Grade: Automotive PSRR: 54dB (100Hz) Voltage Dropout (Max): 0.5V @ 150mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 23 mA Qualification: AEC-Q100 |
на замовлення 10941 шт: термін постачання 21-31 дні (днів) |
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TLF50241ELXUMA2 | Infineon Technologies |
Description: IC REG BUCK 5V 500MA PGSSOP14Packaging: Bulk Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 500mA Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Positive Frequency - Switching: 2.25MHz Voltage - Input (Max): 45V Topology: Buck Supplier Device Package: PG-SSOP-14-EP Synchronous Rectifier: No Voltage - Input (Min): 4.75V Voltage - Output (Min/Fixed): 5V Grade: Automotive Qualification: AEC-Q100 |
на замовлення 41736 шт: термін постачання 21-31 дні (днів) |
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TDA38725A0000AUMA1 | Infineon Technologies |
Description: OPTIMOS IPOL TDA38640A, TDA38740Packaging: Tape & Reel (TR) Package / Case: 36-PowerVFQFN Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 25A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 400kHz ~ 2MHz Voltage - Input (Max): 17V Topology: Buck Supplier Device Package: PG-IQFN-36-3 Synchronous Rectifier: Yes Voltage - Output (Max): 5.12V Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 0.25V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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TDA38725A0000AUMA1 | Infineon Technologies |
Description: OPTIMOS IPOL TDA38640A, TDA38740Packaging: Cut Tape (CT) Package / Case: 36-PowerVFQFN Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 25A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 400kHz ~ 2MHz Voltage - Input (Max): 17V Topology: Buck Supplier Device Package: PG-IQFN-36-3 Synchronous Rectifier: Yes Voltage - Output (Max): 5.12V Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 0.25V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
TDA38740A0000AUMA1 | Infineon Technologies |
Description: OPTIMOS IPOL TDA38640A, TDA38740Packaging: Tape & Reel (TR) Package / Case: 36-PowerVFQFN Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 40A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 400kHz ~ 2MHz Voltage - Input (Max): 17V Topology: Buck Supplier Device Package: PG-IQFN-36-3 Synchronous Rectifier: Yes Voltage - Output (Max): 5.12V Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 0.25V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
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TDA38740A0000AUMA1 | Infineon Technologies |
Description: OPTIMOS IPOL TDA38640A, TDA38740Packaging: Cut Tape (CT) Package / Case: 36-PowerVFQFN Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 40A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 400kHz ~ 2MHz Voltage - Input (Max): 17V Topology: Buck Supplier Device Package: PG-IQFN-36-3 Synchronous Rectifier: Yes Voltage - Output (Max): 5.12V Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 0.25V |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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TDA38640A0000AUMA1 | Infineon Technologies |
Description: OPTIMOS IPOL TDA38640A, TDA38740Packaging: Tape & Reel (TR) Package / Case: 36-PowerVFQFN Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 40A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 400kHz ~ 2MHz Voltage - Input (Max): 17V Topology: Buck Supplier Device Package: PG-IQFN-36-3 Synchronous Rectifier: Yes Voltage - Output (Max): 3.04V Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 0.25V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
|
TDA38640A0000AUMA1 | Infineon Technologies |
Description: OPTIMOS IPOL TDA38640A, TDA38740Packaging: Cut Tape (CT) Package / Case: 36-PowerVFQFN Output Type: Programmable Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Down Current - Output: 40A Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 400kHz ~ 2MHz Voltage - Input (Max): 17V Topology: Buck Supplier Device Package: PG-IQFN-36-3 Synchronous Rectifier: Yes Voltage - Output (Max): 3.04V Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 0.25V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
TLF12501AUMA1 | Infineon Technologies |
Description: IC GATE DRVR VIQFN36Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| IPP70N12S311AKSA2 |
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Виробник: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET_(120V 300V)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 83µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4355 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику
од. на суму грн.
| IPB100N12S305ATMA2 |
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Виробник: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET_(120V 300V)
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
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Мінімальне замовлення: 1000 шт
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| IPP100N12S305AKSA2 |
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Виробник: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET_(120V 300V)
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 100A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11570 pF @ 25 V
Qualification: AEC-Q101
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Мінімальне замовлення: 7000 шт
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| D3041N65TXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE GEN PURP 6.5KV 4090A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 4090A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 6500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4000 A
Current - Reverse Leakage @ Vr: 100 mA @ 6500 V
Description: DIODE GEN PURP 6.5KV 4090A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 4090A
Operating Temperature - Junction: -40°C ~ 160°C
Voltage - DC Reverse (Vr) (Max): 6500 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4000 A
Current - Reverse Leakage @ Vr: 100 mA @ 6500 V
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Мінімальне замовлення: 2 шт
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| ISA250250N04LMDSXTMA1 |
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Виробник: Infineon Technologies
Description: ISA250250N04LMDSXTMA1
Supplier Device Package: PG-DSO-8-920
Vgs(th) (Max) @ Id: 2.7V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.4W (Ta), 2.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: ISA250250N04LMDSXTMA1
Supplier Device Package: PG-DSO-8-920
Vgs(th) (Max) @ Id: 2.7V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.4W (Ta), 2.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Мінімальне замовлення: 4000 шт
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| ISA250250N04LMDSXTMA1 |
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Виробник: Infineon Technologies
Description: ISA250250N04LMDSXTMA1
Supplier Device Package: PG-DSO-8-920
Vgs(th) (Max) @ Id: 2.7V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.4W (Ta), 2.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: ISA250250N04LMDSXTMA1
Supplier Device Package: PG-DSO-8-920
Vgs(th) (Max) @ Id: 2.7V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.4W (Ta), 2.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 167 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 97.53 грн |
| 10+ | 58.95 грн |
| 100+ | 38.69 грн |
| ESD206B102ELE6327XTMA1 |
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Виробник: Infineon Technologies
Description: TVS DIODE 5.5VWM 9.6VC PGTSLP219
Packaging: Bulk
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 9.6V (Typ)
Power Line Protection: No
Description: TVS DIODE 5.5VWM 9.6VC PGTSLP219
Packaging: Bulk
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: PG-TSLP-2-19
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.1V
Voltage - Clamping (Max) @ Ipp: 9.6V (Typ)
Power Line Protection: No
на замовлення 2619162 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3566+ | 5.56 грн |
| ETT580N16P60HPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 586 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: SCR MODULE 1.6KV 700A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 586 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 14697.33 грн |
| ETT630N16P60HPSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 700A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 635 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: SCR MODULE 1.6KV 700A MODULE
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 700 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 635 A
Number of SCRs, Diodes: 2 SCRs
Current - Non Rep. Surge 50, 60Hz (Itsm): 19800A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Series Connection - All SCRs
Operating Temperature: -40°C ~ 135°C (TC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 19052.49 грн |
| IRG7PH28UD1PBF |
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Виробник: Infineon Technologies
Description: IGBT 1200V 30A 115W TO247AC
Power - Max: 115 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Gate Charge: 90 nC
Test Condition: 600V, 15A, 22Ohm, 15V
Switching Energy: 543µJ (off)
Td (on/off) @ 25°C: -/229ns
IGBT Type: Trench
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 1200V 30A 115W TO247AC
Power - Max: 115 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Gate Charge: 90 nC
Test Condition: 600V, 15A, 22Ohm, 15V
Switching Energy: 543µJ (off)
Td (on/off) @ 25°C: -/229ns
IGBT Type: Trench
Supplier Device Package: TO-247AC
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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| IRG7PH37K10DPBF |
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Виробник: Infineon Technologies
Description: IGBT 1200V 45A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 50ns/240ns
Switching Energy: 1mJ (on), 600µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 216 W
Description: IGBT 1200V 45A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 120 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 50ns/240ns
Switching Energy: 1mJ (on), 600µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 216 W
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| CY62167G18-55ZXI |
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Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 960 шт
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| AUIRFR5505TRL |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET P-CH 55V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 9.6A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Qualification: AEC-Q101
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| S29GL256S11DHIV10 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 520 шт
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| CY8C4146LQS-S273 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC MCU 32BIT 64KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 440.08 грн |
| 10+ | 326.73 грн |
| 25+ | 302.61 грн |
| 80+ | 264.80 грн |
| SAA-XC886-6FFA AC |
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Виробник: Infineon Technologies
Description: IC MCU 8BIT 24KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 24KB (24K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 140°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-48
Number of I/O: 34
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 24KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 24KB (24K x 8)
RAM Size: 1.75K x 8
Operating Temperature: -40°C ~ 140°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: PG-TQFP-48
Number of I/O: 34
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1800 шт
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| FS75R12KT3BOSA1 |
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на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 6675.07 грн |
| STK14C88-NF45 |
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Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 256KBIT PAR 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 44 шт
В кошику
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| STK14C88-3NF35 |
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Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 256KBIT PAR 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 44 шт
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од. на суму грн.
| STK14C88-5L35M |
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Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-PLCC (11.43x13.97)
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 256KBIT PAR 32PLCC
Packaging: Tube
Package / Case: 32-LCC (J-Lead)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-PLCC (11.43x13.97)
Write Cycle Time - Word, Page: 35ns
Memory Interface: Parallel
Access Time: 35 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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од. на суму грн.
| STK14C88-3WF45 |
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Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PARALLEL 32DIP
Packaging: Tube
Package / Case: 32-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-PDIP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC NVSRAM 256KBIT PARALLEL 32DIP
Packaging: Tube
Package / Case: 32-DIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-PDIP
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| STK14C88C-1XWI |
Виробник: Infineon Technologies
Description: IC NVSRAM 256KBIT PAR 32CDIP
Packaging: Bulk
Package / Case: 32-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-CDIP
Memory Interface: Parallel
Memory Organization: 32K x 8
Description: IC NVSRAM 256KBIT PAR 32CDIP
Packaging: Bulk
Package / Case: 32-CDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: NVSRAM (Non-Volatile SRAM)
Memory Format: NVSRAM
Supplier Device Package: 32-CDIP
Memory Interface: Parallel
Memory Organization: 32K x 8
товару немає в наявності
В кошику
од. на суму грн.
| IDWD10G200C5XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 2000V 35A PGTO247-2U01
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1140pF @ 1V, 100kHz
Current - Average Rectified (Io): 35A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 2 kV
Description: DIODE SIC 2000V 35A PGTO247-2U01
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1140pF @ 1V, 100kHz
Current - Average Rectified (Io): 35A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 2 kV
на замовлення 2610 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 786.59 грн |
| 30+ | 449.69 грн |
| 60+ | 413.06 грн |
| 120+ | 358.75 грн |
| 510+ | 312.41 грн |
| IDWD25G200C5XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 2000V 77A PGTO2472U01
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2850pF @ 1V, 100kHz
Current - Average Rectified (Io): 77A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 25 A
Current - Reverse Leakage @ Vr: 375 µA @ 2 kV
Description: DIODE SIC 2000V 77A PGTO2472U01
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2850pF @ 1V, 100kHz
Current - Average Rectified (Io): 77A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 25 A
Current - Reverse Leakage @ Vr: 375 µA @ 2 kV
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1229.04 грн |
| 30+ | 737.24 грн |
| IDWD50G200C5XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 2000V 140A TO247-2U01
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 5700pF @ 1V, 100kHz
Current - Average Rectified (Io): 140A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 50 A
Current - Reverse Leakage @ Vr: 750 µA @ 2 kV
Description: DIODE SIC 2000V 140A TO247-2U01
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 5700pF @ 1V, 100kHz
Current - Average Rectified (Io): 140A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 50 A
Current - Reverse Leakage @ Vr: 750 µA @ 2 kV
на замовлення 259 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2282.05 грн |
| 30+ | 1432.75 грн |
| 60+ | 1342.03 грн |
| 120+ | 1206.95 грн |
| IDYH10G200C5XKSA1 |
Виробник: Infineon Technologies
Description: DIODE SIC 2000V 35A PGTO247U04
Packaging: Tube
Package / Case: TO-247-4 Variant
Mounting Type: Through Hole
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1140pF @ 1V, 100kHz
Current - Average Rectified (Io): 35A
Supplier Device Package: PG-TO247-U04
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 2000 V
Description: DIODE SIC 2000V 35A PGTO247U04
Packaging: Tube
Package / Case: TO-247-4 Variant
Mounting Type: Through Hole
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1140pF @ 1V, 100kHz
Current - Average Rectified (Io): 35A
Supplier Device Package: PG-TO247-U04
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 2000 V
на замовлення 47 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 925.35 грн |
| 30+ | 535.92 грн |
| IDYH50G200C5XKSA1 |
на замовлення 75 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2596.05 грн |
| 30+ | 1646.57 грн |
| IRL8114PBF |
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Виробник: Infineon Technologies
Description: IRL8114 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-220AB
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 15 V
Description: IRL8114 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 40A, 10V
Power Dissipation (Max): 115W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-220AB
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 15 V
на замовлення 8800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 247+ | 92.11 грн |
| CY62157G18-55BVXI |
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Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 8MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 16
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 480 шт
В кошику
од. на суму грн.
| IMT40R036M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 200 V
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 200 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IMT40R036M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 200 V
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 200 V
на замовлення 1929 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 575.67 грн |
| 10+ | 375.90 грн |
| 100+ | 275.23 грн |
| 500+ | 252.04 грн |
| IMBG40R036M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 200 V
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 200 V
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IMBG40R036M2HXTMA1 |
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Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 200 V
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO263-7-11
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 200 V
на замовлення 913 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 617.69 грн |
| 10+ | 405.22 грн |
| 100+ | 297.99 грн |
| 500+ | 276.96 грн |
| CY7C109B-15VXC |
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Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1150 шт
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| CY7C109B-15ZC |
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Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Bag
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Bag
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 780 шт
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| CY7C109BN-12ZXC |
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Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tray
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Tray
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 780 шт
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| CY7C109B-15VC |
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Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2070 шт
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| CY7C109B-20ZXC |
Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Bag
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Bag
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1560 шт
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| CY7C109B-20ZC |
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Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Bag
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32TSOP I
Packaging: Bag
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP I
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 780 шт
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| cy7c109b-12vc |
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Виробник: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PARALLEL 32SOJ
Packaging: Tube
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOJ
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Access Time: 12 ns
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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| MB9DF126BPMC-GSK5E2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-R4
Data Converters: A/D 50x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 141
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-R4
Data Converters: A/D 50x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 141
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 40 шт
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| MB9DF126PMC-GSK5E2 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-R4
Data Converters: A/D 50x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 141
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 2MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 128MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 208K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: ARM® Cortex®-R4
Data Converters: A/D 50x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 141
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 80 шт
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| CY9DF566MAEEQ-GTE1 |
Виробник: Infineon Technologies
Description: IC MCU 32B 2.25MB FLASH 208TEQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.25MB (2.25M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, CSIO, FlexRay, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 125
DigiKey Programmable: Not Verified
Description: IC MCU 32B 2.25MB FLASH 208TEQFP
Packaging: Tray
Package / Case: 208-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 2.25MB (2.25M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: Arm® Cortex®-R5F
Data Converters: A/D 40x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.1V ~ 5.5V
Connectivity: CANbus, CSIO, FlexRay, LINbus, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 208-TEQFP (28x28)
Number of I/O: 125
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 360 шт
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| TLE92633BQXXUMA2 |
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Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
на замовлення 4963 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 288.63 грн |
| 10+ | 209.98 грн |
| 25+ | 193.03 грн |
| 100+ | 163.70 грн |
| 250+ | 155.38 грн |
| 500+ | 154.68 грн |
| BSM10GD120DN2E3224BPSA1 |
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 530 pF @ 25 V
Description: LOW POWER ECONO AG-ECONO2A-211
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A
NTC Thermistor: No
Supplier Device Package: AG-ECONO2B
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 80 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 530 pF @ 25 V
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| FS150R12N3T7B11BPSA1 |
Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3B
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 12 µA
Input Capacitance (Cies) @ Vce: 30.1 nF @ 25 V
товару немає в наявності
Мінімальне замовлення: 10 шт
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| FS150R12KT4PBPSA2 |
Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9350 pF @ 25 V
Description: LOW POWER ECONO
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 9350 pF @ 25 V
товару немає в наявності
Мінімальне замовлення: 6 шт
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| FS150R12N3T4PB81BPSA1 |
товару немає в наявності
Мінімальне замовлення: 6 шт
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| IGD03N120S7ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 45 W
Description: IGBT TRENCH FS 1200V 10A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 45 W
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| IGD03N120S7ATMA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 45 W
Description: IGBT TRENCH FS 1200V 10A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 3A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19ns/89ns
Switching Energy: 210µJ (on), 160µJ (off)
Test Condition: 600V, 3A, 60Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 9 A
Power - Max: 45 W
на замовлення 998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 128.45 грн |
| 10+ | 78.49 грн |
| 100+ | 52.64 грн |
| 500+ | 39.00 грн |
| S29GL01GT10FHI030 |
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Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (13x11)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику
од. на суму грн.
| TLE4262GMXUMA2 |
![]() |
Виробник: Infineon Technologies
Description: OPTIREG LINEAR
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
Description: OPTIREG LINEAR
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 50 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 54dB (100Hz)
Voltage Dropout (Max): 0.5V @ 150mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 23 mA
Qualification: AEC-Q100
на замовлення 10941 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 290+ | 78.52 грн |
| TLF50241ELXUMA2 |
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Виробник: Infineon Technologies
Description: IC REG BUCK 5V 500MA PGSSOP14
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.25MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-EP
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG BUCK 5V 500MA PGSSOP14
Packaging: Bulk
Package / Case: 14-LSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 500mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Frequency - Switching: 2.25MHz
Voltage - Input (Max): 45V
Topology: Buck
Supplier Device Package: PG-SSOP-14-EP
Synchronous Rectifier: No
Voltage - Input (Min): 4.75V
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
Qualification: AEC-Q100
на замовлення 41736 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 188+ | 109.58 грн |
| TDA38725A0000AUMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TDA38725A0000AUMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 25A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
товару немає в наявності
В кошику
од. на суму грн.
| TDA38740A0000AUMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TDA38740A0000AUMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.12V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 363.95 грн |
| 10+ | 267.09 грн |
| 25+ | 246.26 грн |
| 100+ | 209.63 грн |
| TDA38640A0000AUMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Tape & Reel (TR)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| TDA38640A0000AUMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
Description: OPTIMOS IPOL TDA38640A, TDA38740
Packaging: Cut Tape (CT)
Package / Case: 36-PowerVFQFN
Output Type: Programmable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 40A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 400kHz ~ 2MHz
Voltage - Input (Max): 17V
Topology: Buck
Supplier Device Package: PG-IQFN-36-3
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.04V
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 0.25V
товару немає в наявності
В кошику
од. на суму грн.
| TLF12501AUMA1 |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR VIQFN36
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC GATE DRVR VIQFN36
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.


































