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TLE7268SKXUMA1 TLE7268SKXUMA1 Infineon Technologies Infineon-TLE7268-DS-v01_00-EN.pdf?fileId=5546d4625f2e26bc015f2eed1d820343 Description: IC TRANSCEIVER HALF 2/2 PGDSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 2/2
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: PG-DSO-14
Receiver Hysteresis: 200 mV
Duplex: Half
Grade: Automotive
на замовлення 4685 шт:
термін постачання 21-31 дні (днів)
3+132.90 грн
10+94.26 грн
25+85.80 грн
100+71.72 грн
250+67.54 грн
500+65.02 грн
1000+61.91 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE72702GATMA1 TLE72702GATMA1 Infineon Technologies Infineon-TLE7270-2-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf0159f9d6c23d3e91 Description: IC REG LINEAR 5V 300MA TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Reset
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
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TLE72702GATMA1 TLE72702GATMA1 Infineon Technologies Infineon-TLE7270-2-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf0159f9d6c23d3e91 Description: IC REG LINEAR 5V 300MA TO263-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Reset
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
на замовлення 992 шт:
термін постачання 21-31 дні (днів)
2+184.63 грн
10+131.96 грн
25+120.59 грн
100+101.43 грн
250+95.83 грн
500+92.45 грн
Мінімальне замовлення: 2
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IPD70N12S3L12ATMA1 IPD70N12S3L12ATMA1 Infineon Technologies Infineon-IPD70N12S3L-12-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf0bed67fef Description: MOSFET N-CHANNEL_100+
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
Qualification: AEC-Q101
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ESD127U1W0201E6327XTSA1 ESD127U1W0201E6327XTSA1 Infineon Technologies Infineon-ESD127-U1-W0201-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185ee8edf4e0096 Description: TVS DIODE 3.3VWM 2.5V SGWLL25
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 2.5V (Typ)
Power - Peak Pulse: 2.5W
Power Line Protection: No
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ESD127U1W0201E6327XTSA1 ESD127U1W0201E6327XTSA1 Infineon Technologies Infineon-ESD127-U1-W0201-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185ee8edf4e0096 Description: TVS DIODE 3.3VWM 2.5V SGWLL25
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 2.5V (Typ)
Power - Peak Pulse: 2.5W
Power Line Protection: No
на замовлення 7003 шт:
термін постачання 21-31 дні (днів)
20+15.92 грн
34+9.27 грн
100+5.75 грн
500+3.93 грн
1000+3.46 грн
2000+3.06 грн
5000+2.59 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
AUIRF540ZXKMA1 AUIRF540ZXKMA1 Infineon Technologies Infineon-AUIRF540Z-DS-v01_02-EN.pdf?fileId=5546d462533600a4015355ace0a513c5 Description: MOSFET_(75V 120V(
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-904
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Qualification: AEC-Q101
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AUIRF2805 AUIRF2805 Infineon Technologies AUIRF2805.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 104A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
Qualification: AEC-Q101
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IAUCN04S6N007TATMA1 IAUCN04S6N007TATMA1 Infineon Technologies Infineon-IAUCN04S6N007T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbc69b1ece Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
товару немає в наявності
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IAUCN04S6N007TATMA1 IAUCN04S6N007TATMA1 Infineon Technologies Infineon-IAUCN04S6N007T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbc69b1ece Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
на замовлення 1624 шт:
термін постачання 21-31 дні (днів)
2+250.68 грн
10+157.41 грн
100+109.58 грн
500+83.67 грн
1000+77.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRGB4630DPBF IRGB4630DPBF Infineon Technologies IRGx4630D%28-E%29PbF.pdf Description: IGBT 600V 47A TO-220AC
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: TO-220AC
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 95µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 206 W
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IDWD40G200C5XKSA1 IDWD40G200C5XKSA1 Infineon Technologies IDWD40G200C5XKSA1.pdf Description: DIODE SIC 2000V 114A PGTO2472U01
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4550pF @ 1V, 100kHz
Current - Average Rectified (Io): 114A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A
Current - Reverse Leakage @ Vr: 600 µA @ 2 kV
на замовлення 278 шт:
термін постачання 21-31 дні (днів)
1+1995.89 грн
30+1240.88 грн
120+1179.76 грн
В кошику  од. на суму  грн.
IGB15N120S7ATMA1 IGB15N120S7ATMA1 Infineon Technologies Infineon-IGB15N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb7408c326a Description: IGBT TRENCH FS 1200V 34A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/156ns
Switching Energy: 900µJ (on), 680µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 141 W
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CY8C20436-24LQXI CY8C20436-24LQXI Infineon Technologies Description: IC CAPSENSE KRYPTON 8K 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 577 шт:
термін постачання 21-31 дні (днів)
2+284.10 грн
10+245.61 грн
25+232.23 грн
80+188.87 грн
230+179.19 грн
490+160.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C20466AS-24LQXI CY8C20466AS-24LQXI Infineon Technologies CY8C20336H%2C446H.pdf Description: IC CAPSENSE AP 32KB 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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CY8C20446A-24LQXI CY8C20446A-24LQXI Infineon Technologies Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: MCU 16K FLASH 2K SRAM 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
5+76.40 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CY8C20496A-24LQXIT CY8C20496A-24LQXIT Infineon Technologies Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU PSOC 16K FLASH 2K 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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CY8C20447S-24LQXIT CY8C20447S-24LQXIT Infineon Technologies Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp Description: IC CAPSENCE SMARTSENCE 16K 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 29
DigiKey Programmable: Not Verified
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CY8C20434-12LKXI CY8C20434-12LKXI Infineon Technologies Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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SLB9673XU20FW2613XTMA1 SLB9673XU20FW2613XTMA1 Infineon Technologies Infineon-OPTIGA%20TPM%20SLB%209673%20FW26-DataSheet-v01_30-EN.pdf?fileId=8ac78c8c821f389001826301ac645a26 Description: OPTIGA TPM SLB9673
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
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SLB9673XU20FW2613XTMA1 SLB9673XU20FW2613XTMA1 Infineon Technologies Infineon-OPTIGA%20TPM%20SLB%209673%20FW26-DataSheet-v01_30-EN.pdf?fileId=8ac78c8c821f389001826301ac645a26 Description: OPTIGA TPM SLB9673
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
на замовлення 643 шт:
термін постачання 21-31 дні (днів)
1+319.12 грн
10+232.97 грн
25+214.42 грн
100+182.07 грн
250+172.93 грн
500+167.42 грн
В кошику  од. на суму  грн.
SLB9673AU20FW2613XTMA1 SLB9673AU20FW2613XTMA1 Infineon Technologies Infineon-OPTIGA%20TPM%20SLB%209673%20FW26-DataSheet-v01_30-EN.pdf?fileId=8ac78c8c821f389001826301ac645a26 Description: OPTIGA TPM SLB9674
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+209.39 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SLB9673AU20FW2613XTMA1 SLB9673AU20FW2613XTMA1 Infineon Technologies Infineon-OPTIGA%20TPM%20SLB%209673%20FW26-DataSheet-v01_30-EN.pdf?fileId=8ac78c8c821f389001826301ac645a26 Description: OPTIGA TPM SLB9674
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
на замовлення 5580 шт:
термін постачання 21-31 дні (днів)
1+382.78 грн
10+281.02 грн
25+259.24 грн
100+220.77 грн
250+210.03 грн
500+203.56 грн
1000+194.98 грн
2500+189.45 грн
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SLS32AIA010MMUSON10XTMA2 SLS32AIA010MMUSON10XTMA2 Infineon Technologies Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_40-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a Description: SECURITY ICS / AUTHENTICATION IC
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Controller Series: OPTIGA™ Trust M
Program Memory Type: NVM (10kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
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SLS32AIA010MMUSON10XTMA2 SLS32AIA010MMUSON10XTMA2 Infineon Technologies Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_40-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a Description: SECURITY ICS / AUTHENTICATION IC
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Controller Series: OPTIGA™ Trust M
Program Memory Type: NVM (10kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
1+1412.56 грн
10+1207.28 грн
25+1151.34 грн
50+1042.33 грн
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IRFH7921TRPBF IRFH7921TRPBF Infineon Technologies IRFH7921PBF.pdf description Description: MOSFET N-CH 30V 15A/34A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
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7GA830178 Infineon Technologies Description: IC MCU 32BIT 144LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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FP15R12YT3BOMA1 Infineon Technologies Orderable_Part_Number_OPN_Translation_Table_Web.pdf Description: IGBT MOD 1200V 25A 110W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 110 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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CY8C4025AZI-S413 CY8C4025AZI-S413 Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)
2+198.95 грн
10+143.84 грн
25+131.87 грн
80+113.11 грн
250+109.54 грн
Мінімальне замовлення: 2
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IKZA40N65RH5XKSA1 IKZA40N65RH5XKSA1 Infineon Technologies Infineon-IKZA40N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28474d31b2 Description: IGBT TRENCH FS 650V 74A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/165ns
Switching Energy: 140µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
91+243.71 грн
Мінімальне замовлення: 91
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IAUC120N06S5N015ATMA1 IAUC120N06S5N015ATMA1 Infineon Technologies Infineon-IAUC120N06S5N015-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fde5da2e2785f Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
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IPP034N08N5XKSA1 IPP034N08N5XKSA1 Infineon Technologies Infineon-IPP034N08N5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ade84c8b17b40 Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
2+210.89 грн
50+102.20 грн
100+92.40 грн
500+76.66 грн
Мінімальне замовлення: 2
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TLF12505AUMA1 TLF12505AUMA1 Infineon Technologies Description: IC POWER STAGE PG-VIQFN-36
Packaging: Strip
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CY9AF111KPMC-GE1 CY9AF111KPMC-GE1 Infineon Technologies Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
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IR35210MTRPBF IR35210MTRPBF Infineon Technologies Description: IC CONTROLLER 40QFN
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 10mA
Supplier Device Package: 32-MLPQ (5x5)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
83+277.31 грн
Мінімальне замовлення: 83
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IRFZ46ZSTRLPBF IRFZ46ZSTRLPBF Infineon Technologies irfz46zpbf.pdf?fileId=5546d462533600a40153563e9b002226 Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
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D2601NH90TXPSA1 D2601NH90TXPSA1 Infineon Technologies Infineon-D2601NH-DS-v05_00-en_de.pdf?fileId=db3a304412b407950112b42fecdb4e58 Description: DIODE GEN PURP 9KV 1790A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1790A
Operating Temperature - Junction: 0°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 9000 V
Voltage - Forward (Vf) (Max) @ If: 5.5 V @ 4000 A
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
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CY7C66113C-LTXC CY7C66113C-LTXC Infineon Technologies CY7C66013%2C%2066113C.pdf Description: IC MCU 8K USB HUB 4PORT 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB, HAPI
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Controller Series: USB Hub
Program Memory Type: OTP (8kB)
Applications: USB Hub/Microcontroller
Core Processor: M8
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 31
DigiKey Programmable: Not Verified
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
44+525.89 грн
Мінімальне замовлення: 44
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T731N44TOHXPSA1 T731N44TOHXPSA1 Infineon Technologies Infineon-T731N-DataSheet-v07_00-EN.pdf?fileId=5546d4627112d9d501712b08e169404e Description: SCR MODULE 4.4KV 2010A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1280 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 2010 A
Voltage - Off State: 4.4 kV
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T1401N42TOHXPSA1 T1401N42TOHXPSA1 Infineon Technologies Infineon-T1401N-DS-v06_00-en_de.pdf?fileId=db3a3043156fd5730115a390fbba08c8 Description: SCR MODULE 4.4KV 2500A TO-200AF
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2290 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 2500 A
Voltage - Off State: 4.4 kV
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T680N14TOFXPSA1 Infineon Technologies Description: SCR MODULE 1400V 1250A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 681 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.4 kV
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EVALPMG1S1DRPTOBO1 EVALPMG1S1DRPTOBO1 Infineon Technologies Infineon-CYPM13xx_EZ-PD_PMG1-S3_Power_delivery_MCU_Gen1-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3 Description: EVALPMG1S1DRPTOBO1
Packaging: Box
Function: USB PD Controller (Power Delivery)
Type: Power Management
Utilized IC / Part: EZ-PD PMG1-S1
Supplied Contents: Board(s)
Embedded: Yes, MCU
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+10397.25 грн
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IPBE65R115CFD7AATMA1 IPBE65R115CFD7AATMA1 Infineon Technologies Infineon-IPBE65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33391547c90 Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
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IPBE65R115CFD7AATMA1 IPBE65R115CFD7AATMA1 Infineon Technologies Infineon-IPBE65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33391547c90 Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
на замовлення 976 шт:
термін постачання 21-31 дні (днів)
1+396.31 грн
10+265.84 грн
100+190.73 грн
500+148.95 грн
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IRFB23N15DPBF IRFB23N15DPBF Infineon Technologies irfs23n15dpbf.pdf?fileId=5546d462533600a4015356361eff2140 Description: MOSFET N-CH 150V 23A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 31931 шт:
термін постачання 21-31 дні (днів)
337+65.33 грн
Мінімальне замовлення: 337
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S29GL064S80DHV020 S29GL064S80DHV020 Infineon Technologies Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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TLE4953CBAMA1 TLE4953CBAMA1 Infineon Technologies Infineon-TLE4953-DataSheet-v04_01-EN.pdf?fileId=db3a304319c6f18c011a2a95ec0b12d4 Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
на замовлення 428 шт:
термін постачання 21-31 дні (днів)
122+188.93 грн
Мінімальне замовлення: 122
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IRL3714ZSPBF IRL3714ZSPBF Infineon Technologies IRL3714Z%28S%2CL%29PbF.pdf description Description: MOSFET N-CH 20V 36A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
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IM241S6T2B2AKMA1 Infineon Technologies Description: CIPOS MICRO
Packaging: Tube
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CY62148ESL-55ZAXIT CY62148ESL-55ZAXIT Infineon Technologies Infineon-CY62148ESL_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe70473204&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148ESL-55ZAXIT CY62148ESL-55ZAXIT Infineon Technologies Infineon-CY62148ESL_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe70473204&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Cut Tape (CT)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1485 шт:
термін постачання 21-31 дні (днів)
1+590.49 грн
10+523.64 грн
25+512.74 грн
50+479.52 грн
100+430.27 грн
250+417.26 грн
500+390.28 грн
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CY62148DV30LL-70ZSXA CY62148DV30LL-70ZSXA Infineon Technologies CY62148DV30.pdf Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tube
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148G-45ZSXI CY62148G-45ZSXI Infineon Technologies Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148ELL-45ZSXA CY62148ELL-45ZSXA Infineon Technologies Infineon-CY62148E_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeea5a32e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148GN30-45SXIT CY62148GN30-45SXIT Infineon Technologies Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148GN30-45ZSXIT CY62148GN30-45ZSXIT Infineon Technologies Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148GN30-45SXI CY62148GN30-45SXI Infineon Technologies Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tube
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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DF100R07W1H5FPB54BPSA2 DF100R07W1H5FPB54BPSA2 Infineon Technologies Infineon-DF100R07W1H5FP_B54-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b5761855903ab Description: IGBT MOD 650V 40A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
на замовлення 67 шт:
термін постачання 21-31 дні (днів)
11+2277.90 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
FP40R12KT3GBOSA1 FP40R12KT3GBOSA1 Infineon Technologies Infineon-FP40R12KT3G-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4316e585446 Description: IGBT MOD 1200V 55A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 401A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
на замовлення 203 шт:
термін постачання 21-31 дні (днів)
4+6439.09 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IRGP4750D-EPBF IRGP4750D-EPBF Infineon Technologies IRGP4750D%28-E%29PbF.pdf Description: IGBT 650V 70A 273W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/105ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 273 W
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TLE7268SKXUMA1 Infineon-TLE7268-DS-v01_00-EN.pdf?fileId=5546d4625f2e26bc015f2eed1d820343
TLE7268SKXUMA1
Виробник: Infineon Technologies
Description: IC TRANSCEIVER HALF 2/2 PGDSO14
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 18V
Number of Drivers/Receivers: 2/2
Data Rate: 20kbps
Protocol: LIN
Supplier Device Package: PG-DSO-14
Receiver Hysteresis: 200 mV
Duplex: Half
Grade: Automotive
на замовлення 4685 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+132.90 грн
10+94.26 грн
25+85.80 грн
100+71.72 грн
250+67.54 грн
500+65.02 грн
1000+61.91 грн
Мінімальне замовлення: 3
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TLE72702GATMA1 Infineon-TLE7270-2-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf0159f9d6c23d3e91
TLE72702GATMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 300MA TO263-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Reset
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
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TLE72702GATMA1 Infineon-TLE7270-2-DS-v01_01-EN.pdf?fileId=5546d46259d9a4bf0159f9d6c23d3e91
TLE72702GATMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 300MA TO263-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 30 µA
Voltage - Input (Max): 42V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 5V
Control Features: Delay, Reset
Grade: Automotive
PSRR: 60dB (100Hz)
Voltage Dropout (Max): 0.5V @ 200mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 40 µA
Qualification: AEC-Q100
на замовлення 992 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+184.63 грн
10+131.96 грн
25+120.59 грн
100+101.43 грн
250+95.83 грн
500+92.45 грн
Мінімальне замовлення: 2
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IPD70N12S3L12ATMA1 Infineon-IPD70N12S3L-12-DS-v01_00-EN.pdf?fileId=5546d462584d1d4a0158baf0bed67fef
IPD70N12S3L12ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CHANNEL_100+
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 83µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
Qualification: AEC-Q101
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ESD127U1W0201E6327XTSA1 Infineon-ESD127-U1-W0201-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185ee8edf4e0096
ESD127U1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 2.5V SGWLL25
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 2.5V (Typ)
Power - Peak Pulse: 2.5W
Power Line Protection: No
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ESD127U1W0201E6327XTSA1 Infineon-ESD127-U1-W0201-DataSheet-v01_02-EN.pdf?fileId=8ac78c8c85ecb3470185ee8edf4e0096
ESD127U1W0201E6327XTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 3.3VWM 2.5V SGWLL25
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.7pF @ 1GHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: SG-WLL-2-5
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 2.5V (Typ)
Power - Peak Pulse: 2.5W
Power Line Protection: No
на замовлення 7003 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+15.92 грн
34+9.27 грн
100+5.75 грн
500+3.93 грн
1000+3.46 грн
2000+3.06 грн
5000+2.59 грн
Мінімальне замовлення: 20
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AUIRF540ZXKMA1 Infineon-AUIRF540Z-DS-v01_02-EN.pdf?fileId=5546d462533600a4015355ace0a513c5
AUIRF540ZXKMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO220-3-904
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Qualification: AEC-Q101
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AUIRF2805 AUIRF2805.pdf
AUIRF2805
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 104A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5110 pF @ 25 V
Qualification: AEC-Q101
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IAUCN04S6N007TATMA1 Infineon-IAUCN04S6N007T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbc69b1ece
IAUCN04S6N007TATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
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IAUCN04S6N007TATMA1 Infineon-IAUCN04S6N007T-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c8929aa4d018a1dcbc69b1ece
IAUCN04S6N007TATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
на замовлення 1624 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+250.68 грн
10+157.41 грн
100+109.58 грн
500+83.67 грн
1000+77.51 грн
Мінімальне замовлення: 2
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IRGB4630DPBF IRGx4630D%28-E%29PbF.pdf
IRGB4630DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 47A TO-220AC
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 18A
Supplier Device Package: TO-220AC
Td (on/off) @ 25°C: 40ns/105ns
Switching Energy: 95µJ (on), 350µJ (off)
Test Condition: 400V, 18A, 22Ohm, 15V
Gate Charge: 35 nC
Current - Collector (Ic) (Max): 47 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 54 A
Power - Max: 206 W
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IDWD40G200C5XKSA1 IDWD40G200C5XKSA1.pdf
IDWD40G200C5XKSA1
Виробник: Infineon Technologies
Description: DIODE SIC 2000V 114A PGTO2472U01
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 4550pF @ 1V, 100kHz
Current - Average Rectified (Io): 114A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 40 A
Current - Reverse Leakage @ Vr: 600 µA @ 2 kV
на замовлення 278 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1995.89 грн
30+1240.88 грн
120+1179.76 грн
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IGB15N120S7ATMA1 Infineon-IGB15N120S7-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c914a3ac801917eb7408c326a
IGB15N120S7ATMA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 34A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16ns/156ns
Switching Energy: 900µJ (on), 680µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 141 W
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CY8C20436-24LQXI
CY8C20436-24LQXI
Виробник: Infineon Technologies
Description: IC CAPSENSE KRYPTON 8K 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6
Program Memory Type: FLASH (8kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 577 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+284.10 грн
10+245.61 грн
25+232.23 грн
80+188.87 грн
230+179.19 грн
490+160.79 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C20466AS-24LQXI CY8C20336H%2C446H.pdf
CY8C20466AS-24LQXI
Виробник: Infineon Technologies
Description: IC CAPSENSE AP 32KB 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (32kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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CY8C20446A-24LQXI Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C20446A-24LQXI
Виробник: Infineon Technologies
Description: MCU 16K FLASH 2K SRAM 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
на замовлення 39 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+76.40 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
CY8C20496A-24LQXIT Infineon-TS2000_001-64564-Software+Module+Datasheets-v01_03-EN.pdf?fileId=8ac78c8c7d0d8da4017d0fa2d0df1226&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C20496A-24LQXIT
Виробник: Infineon Technologies
Description: IC MCU PSOC 16K FLASH 2K 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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CY8C20447S-24LQXIT Infineon-CY8C20xx7_S_1.8_V_CapSense_Controller_with_SmartSense_Auto-tuning_31_Buttons_6_Sliders_Proximity_Sensors-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eca484942ea&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20447S-24LQXIT
Виробник: Infineon Technologies
Description: IC CAPSENCE SMARTSENCE 16K 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx7/S
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 29
DigiKey Programmable: Not Verified
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CY8C20434-12LKXI
CY8C20434-12LKXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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SLB9673XU20FW2613XTMA1 Infineon-OPTIGA%20TPM%20SLB%209673%20FW26-DataSheet-v01_30-EN.pdf?fileId=8ac78c8c821f389001826301ac645a26
SLB9673XU20FW2613XTMA1
Виробник: Infineon Technologies
Description: OPTIGA TPM SLB9673
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
товару немає в наявності
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SLB9673XU20FW2613XTMA1 Infineon-OPTIGA%20TPM%20SLB%209673%20FW26-DataSheet-v01_30-EN.pdf?fileId=8ac78c8c821f389001826301ac645a26
SLB9673XU20FW2613XTMA1
Виробник: Infineon Technologies
Description: OPTIGA TPM SLB9673
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
на замовлення 643 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+319.12 грн
10+232.97 грн
25+214.42 грн
100+182.07 грн
250+172.93 грн
500+167.42 грн
В кошику  од. на суму  грн.
SLB9673AU20FW2613XTMA1 Infineon-OPTIGA%20TPM%20SLB%209673%20FW26-DataSheet-v01_30-EN.pdf?fileId=8ac78c8c821f389001826301ac645a26
SLB9673AU20FW2613XTMA1
Виробник: Infineon Technologies
Description: OPTIGA TPM SLB9674
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+209.39 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SLB9673AU20FW2613XTMA1 Infineon-OPTIGA%20TPM%20SLB%209673%20FW26-DataSheet-v01_30-EN.pdf?fileId=8ac78c8c821f389001826301ac645a26
SLB9673AU20FW2613XTMA1
Виробник: Infineon Technologies
Description: OPTIGA TPM SLB9674
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
на замовлення 5580 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+382.78 грн
10+281.02 грн
25+259.24 грн
100+220.77 грн
250+210.03 грн
500+203.56 грн
1000+194.98 грн
2500+189.45 грн
В кошику  од. на суму  грн.
SLS32AIA010MMUSON10XTMA2 Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_40-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a
SLS32AIA010MMUSON10XTMA2
Виробник: Infineon Technologies
Description: SECURITY ICS / AUTHENTICATION IC
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Controller Series: OPTIGA™ Trust M
Program Memory Type: NVM (10kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
товару немає в наявності
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SLS32AIA010MMUSON10XTMA2 Infineon-OPTIGA%20TRUST%20M%20SLS32AIA-DataSheet-v03_40-EN.pdf?fileId=5546d4626c1f3dc3016c853c271a7e4a
SLS32AIA010MMUSON10XTMA2
Виробник: Infineon Technologies
Description: SECURITY ICS / AUTHENTICATION IC
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -25°C ~ 85°C (TA)
Voltage - Supply: 1.62V ~ 5.5V
Controller Series: OPTIGA™ Trust M
Program Memory Type: NVM (10kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 16-Bit
Supplier Device Package: PG-USON-10-2
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1412.56 грн
10+1207.28 грн
25+1151.34 грн
50+1042.33 грн
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IRFH7921TRPBF description IRFH7921PBF.pdf
IRFH7921TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 15A/34A PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 34A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: PQFN (5x6) Single Die
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 15 V
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7GA830178
Виробник: Infineon Technologies
Description: IC MCU 32BIT 144LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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FP15R12YT3BOMA1 Orderable_Part_Number_OPN_Translation_Table_Web.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 25A 110W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 110 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
товару немає в наявності
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CY8C4025AZI-S413 Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CY8C4025AZI-S413
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 2450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+198.95 грн
10+143.84 грн
25+131.87 грн
80+113.11 грн
250+109.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IKZA40N65RH5XKSA1 Infineon-IKZA40N65RH5-DataSheet-v02_01-EN.pdf?fileId=5546d46275b79adb0175dc28474d31b2
IKZA40N65RH5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 74A TO247-4
Packaging: Bulk
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: PG-TO247-4-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/165ns
Switching Energy: 140µJ (on), 120µJ (off)
Test Condition: 400V, 20A, 15Ohm, 15V
Gate Charge: 95 nC
Current - Collector (Ic) (Max): 74 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
91+243.71 грн
Мінімальне замовлення: 91
В кошику  од. на суму  грн.
IAUC120N06S5N015ATMA1 Infineon-IAUC120N06S5N015-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fde5da2e2785f
IAUC120N06S5N015ATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
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IPP034N08N5XKSA1 Infineon-IPP034N08N5-DS-v02_00-EN.pdf?fileId=5546d4624ad04ef9014ade84c8b17b40
IPP034N08N5XKSA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 108µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 40 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+210.89 грн
50+102.20 грн
100+92.40 грн
500+76.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLF12505AUMA1
TLF12505AUMA1
Виробник: Infineon Technologies
Description: IC POWER STAGE PG-VIQFN-36
Packaging: Strip
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CY9AF111KPMC-GE1
CY9AF111KPMC-GE1
Виробник: Infineon Technologies
Description: MULTI-MARKET MCUS
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 96KB (96K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 8x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
товару немає в наявності
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IR35210MTRPBF
IR35210MTRPBF
Виробник: Infineon Technologies
Description: IC CONTROLLER 40QFN
Packaging: Bulk
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 100°C (TJ)
Voltage - Supply: 4.75V ~ 7.5V
Applications: Multiphase Controller
Current - Supply: 10mA
Supplier Device Package: 32-MLPQ (5x5)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
83+277.31 грн
Мінімальне замовлення: 83
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IRFZ46ZSTRLPBF irfz46zpbf.pdf?fileId=5546d462533600a40153563e9b002226
IRFZ46ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
товару немає в наявності
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D2601NH90TXPSA1 Infineon-D2601NH-DS-v05_00-en_de.pdf?fileId=db3a304412b407950112b42fecdb4e58
D2601NH90TXPSA1
Виробник: Infineon Technologies
Description: DIODE GEN PURP 9KV 1790A
Packaging: Tray
Package / Case: DO-200AE
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1790A
Operating Temperature - Junction: 0°C ~ 140°C
Voltage - DC Reverse (Vr) (Max): 9000 V
Voltage - Forward (Vf) (Max) @ If: 5.5 V @ 4000 A
Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
товару немає в наявності
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CY7C66113C-LTXC CY7C66013%2C%2066113C.pdf
CY7C66113C-LTXC
Виробник: Infineon Technologies
Description: IC MCU 8K USB HUB 4PORT 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB, HAPI
RAM Size: 256 x 8
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.25V
Controller Series: USB Hub
Program Memory Type: OTP (8kB)
Applications: USB Hub/Microcontroller
Core Processor: M8
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 31
DigiKey Programmable: Not Verified
на замовлення 480 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
44+525.89 грн
Мінімальне замовлення: 44
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T731N44TOHXPSA1 Infineon-T731N-DataSheet-v07_00-EN.pdf?fileId=5546d4627112d9d501712b08e169404e
T731N44TOHXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 4.4KV 2010A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 1280 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 2010 A
Voltage - Off State: 4.4 kV
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T1401N42TOHXPSA1 Infineon-T1401N-DS-v06_00-en_de.pdf?fileId=db3a3043156fd5730115a390fbba08c8
T1401N42TOHXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 4.4KV 2500A TO-200AF
Packaging: Tray
Package / Case: TO-200AF
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2290 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 2500 A
Voltage - Off State: 4.4 kV
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T680N14TOFXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1400V 1250A DO200AA
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 11000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 681 A
Voltage - Gate Trigger (Vgt) (Max): 2.2 V
Current - On State (It (RMS)) (Max): 1250 A
Voltage - Off State: 1.4 kV
товару немає в наявності
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EVALPMG1S1DRPTOBO1 Infineon-CYPM13xx_EZ-PD_PMG1-S3_Power_delivery_MCU_Gen1-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7ddc01d7017ddd0263aa58f3
EVALPMG1S1DRPTOBO1
Виробник: Infineon Technologies
Description: EVALPMG1S1DRPTOBO1
Packaging: Box
Function: USB PD Controller (Power Delivery)
Type: Power Management
Utilized IC / Part: EZ-PD PMG1-S1
Supplied Contents: Board(s)
Embedded: Yes, MCU
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+10397.25 грн
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IPBE65R115CFD7AATMA1 Infineon-IPBE65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33391547c90
IPBE65R115CFD7AATMA1
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
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IPBE65R115CFD7AATMA1 Infineon-IPBE65R115CFD7A-DataSheet-v02_01-EN.pdf?fileId=5546d46270c4f93e0170f33391547c90
IPBE65R115CFD7AATMA1
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS PG-TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 9.7A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 490µA
Supplier Device Package: PG-TO263-7-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 400 V
Qualification: AEC-Q101
на замовлення 976 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+396.31 грн
10+265.84 грн
100+190.73 грн
500+148.95 грн
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IRFB23N15DPBF irfs23n15dpbf.pdf?fileId=5546d462533600a4015356361eff2140
IRFB23N15DPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 23A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 14A, 10V
Power Dissipation (Max): 3.8W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
на замовлення 31931 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
337+65.33 грн
Мінімальне замовлення: 337
В кошику  од. на суму  грн.
S29GL064S80DHV020 Infineon-S29GL064S_64-MBIT_(8_MBYTE)_3.0_V_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed12bd84d2d&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S29GL064S80DHV020
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 80 ns
Memory Organization: 8M x 8, 4M x 16
DigiKey Programmable: Not Verified
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TLE4953CBAMA1 Infineon-TLE4953-DataSheet-v04_01-EN.pdf?fileId=db3a304319c6f18c011a2a95ec0b12d4
TLE4953CBAMA1
Виробник: Infineon Technologies
Description: MAG SWITCH SPEC PURP SSO-2-2
Packaging: Bulk
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Grade: Automotive
Qualification: AEC-Q100
на замовлення 428 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
122+188.93 грн
Мінімальне замовлення: 122
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IRL3714ZSPBF description IRL3714Z%28S%2CL%29PbF.pdf
IRL3714ZSPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 36A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
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IM241S6T2B2AKMA1
Виробник: Infineon Technologies
Description: CIPOS MICRO
Packaging: Tube
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CY62148ESL-55ZAXIT Infineon-CY62148ESL_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe70473204&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148ESL-55ZAXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148ESL-55ZAXIT Infineon-CY62148ESL_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe70473204&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148ESL-55ZAXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32STSOP
Packaging: Cut Tape (CT)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V, 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 1485 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+590.49 грн
10+523.64 грн
25+512.74 грн
50+479.52 грн
100+430.27 грн
250+417.26 грн
500+390.28 грн
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CY62148DV30LL-70ZSXA CY62148DV30.pdf
CY62148DV30LL-70ZSXA
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tube
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148G-45ZSXI Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
CY62148G-45ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148ELL-45ZSXA Infineon-CY62148E_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeea5a32e0&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148ELL-45ZSXA
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148GN30-45SXIT Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148GN30-45SXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148GN30-45ZSXIT Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148GN30-45ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148GN30-45SXI Infineon-CY62148GN_MoBL_4-Mbit_(512_K_8)_Static_RAM-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed80b9e5996&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62148GN30-45SXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tube
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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DF100R07W1H5FPB54BPSA2 Infineon-DF100R07W1H5FP_B54-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b5761855903ab
DF100R07W1H5FPB54BPSA2
Виробник: Infineon Technologies
Description: IGBT MOD 650V 40A 20MW
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Cutoff (Max): 40 µA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
на замовлення 67 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+2277.90 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
FP40R12KT3GBOSA1 Infineon-FP40R12KT3G-DS-v02_01-en_de.pdf?fileId=db3a304412b407950112b4316e585446
FP40R12KT3GBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 55A 210W
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 401A
NTC Thermistor: Yes
Supplier Device Package: Module
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 210 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
на замовлення 203 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+6439.09 грн
Мінімальне замовлення: 4
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IRGP4750D-EPBF IRGP4750D%28-E%29PbF.pdf
IRGP4750D-EPBF
Виробник: Infineon Technologies
Description: IGBT 650V 70A 273W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 150 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 50ns/105ns
Switching Energy: 1.3mJ (on), 500µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 105 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 273 W
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