Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123056) > Сторінка 737 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
T1500N18TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 1.8KV 3500A DO-200ABVoltage - Off State: 1.8 kV Current - On State (It (RMS)) (Max): 3500 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 1500 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz Current - Gate Trigger (Igt) (Max): 350 mA Current - Hold (Ih) (Max): 500 mA Structure: Single Operating Temperature: -40°C ~ 125°C Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Packaging: Bulk |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
T2600N16TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 1.8KV 4100A TO-200ADVoltage - Off State: 1.8 kV Current - On State (It (RMS)) (Max): 4100 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 2610 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 300 mA Structure: Single Operating Temperature: 135°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-200AD Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
T2600N18TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 1.8KV 4100A TO-200ADVoltage - Off State: 1.8 kV Current - On State (It (RMS)) (Max): 4100 A Voltage - Gate Trigger (Vgt) (Max): 2 V Current - On State (It (AV)) (Max): 2610 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 300 mA Structure: Single Operating Temperature: 135°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-200AD Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
T3800N18TOFVTXPSA1 | Infineon Technologies |
Description: SCR MODULE 1.8KV 5970A TO-200AEVoltage - Off State: 1.8 kV Current - On State (It (RMS)) (Max): 5970 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (AV)) (Max): 3800 A Number of SCRs, Diodes: 1 SCR Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz Current - Gate Trigger (Igt) (Max): 250 mA Current - Hold (Ih) (Max): 300 mA Structure: Single Operating Temperature: 135°C (TJ) Mounting Type: Chassis Mount Package / Case: TO-200AE Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IGD08N120S7ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 24A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/149ns Switching Energy: 460µJ (on), 410µJ (off) Test Condition: 600V, 8A, 20Ohm, 15V Gate Charge: 55 nC Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 24 A Power - Max: 106 W |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
IGD08N120S7ATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 24A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 15ns/149ns Switching Energy: 460µJ (on), 410µJ (off) Test Condition: 600V, 8A, 20Ohm, 15V Gate Charge: 55 nC Current - Collector (Ic) (Max): 24 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 24 A Power - Max: 106 W |
на замовлення 2462 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| ISC0605NLSATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VInput Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TDSON-8 Vgs(th) (Max) @ Id: 2.3V @ 115µA Power Dissipation (Max): 2.5W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 195A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
|
IPB160N04S203ATMA4 | Infineon Technologies |
Description: MOSFET N-CH 40V 160A TO263-7Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO263-7-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Packaging: Bulk |
на замовлення 207282 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IRG4IBC20WPBF | Infineon Technologies |
Description: IGBT 600V 12A TO220AB FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A Supplier Device Package: TO-220AB Full-Pak Td (on/off) @ 25°C: 22ns/110ns Switching Energy: 60µJ (on), 80µJ (off) Test Condition: 480V, 6.5A, 50Ohm, 15V Gate Charge: 26 nC Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 52 A Power - Max: 34 W |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
1EDF5673KXUMA1 | Infineon Technologies |
Description: DGT ISO 1.5KV 1CH GT DVR TFLGA13Packaging: Bulk Package / Case: 13-TFLGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Technology: Magnetic Coupling Current - Output High, Low: 4A, 8A Voltage - Isolation: 1500VDC Approval Agency: CQC, CSA, UL, VDE Supplier Device Package: PG-TFLGA-13-1 Rise / Fall Time (Typ): 6.5ns, 4.5ns Common Mode Transient Immunity (Min): 150V/ns Propagation Delay tpLH / tpHL (Max): 44ns, 44ns Pulse Width Distortion (Max): 18ns (Typ) Number of Channels: 1 Voltage - Output Supply: 3.13V ~ 3.47V |
на замовлення 25986 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CY7C1380KV33-250AXC | Infineon Technologies |
Description: IC SRAM 18MBIT PAR 100TQFPDigiKey Programmable: Not Verified Memory Organization: 512K x 36 Access Time: 2.6 ns Memory Interface: Parallel Supplier Device Package: 100-TQFP (14x20) Memory Format: SRAM Clock Frequency: 250 MHz Technology: SRAM - Synchronous, SDR Voltage - Supply: 3.135V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Memory Type: Volatile Memory Size: 18Mbit Mounting Type: Surface Mount Package / Case: 100-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 144 шт В кошику од. на суму грн. | ||||||||||||||||
|
DD104N08KAHPSA1 | Infineon Technologies |
Description: DIODE MOD GP 800V 104A POWRBLOKPackaging: Bulk Package / Case: POW-R-BLOK™ Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 104A Supplier Device Package: POW-R-BLOK™ Module Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A Current - Reverse Leakage @ Vr: 20 mA @ 800 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IRFS4410TRLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 88A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO263-3 Vgs(th) (Max) @ Id: 4V @ 150µA Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V Current - Continuous Drain (Id) @ 25°C: 88A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Bulk |
на замовлення 842 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
S29GL512T12DHN013 | Infineon Technologies |
Description: IC FLASH 512MBIT PARALLEL 64FBGADigiKey Programmable: Not Verified Memory Organization: 64M x 8 Access Time: 120 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Supplier Device Package: 64-FBGA (9x9) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 512Mbit Mounting Type: Surface Mount Package / Case: 64-LBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2200 шт В кошику од. на суму грн. | ||||||||||||||||
|
S29GL01GT12DHN013 | Infineon Technologies |
Description: IC FLASH 1GBIT PARALLEL 64FBGADigiKey Programmable: Not Verified Memory Organization: 128M x 8 Access Time: 120 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 60ns Supplier Device Package: 64-FBGA (9x9) Memory Format: FLASH Technology: FLASH - NOR Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Memory Type: Non-Volatile Memory Size: 1Gbit Mounting Type: Surface Mount Package / Case: 64-LBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2200 шт В кошику од. на суму грн. | ||||||||||||||||
| 64-2143PBF | Infineon Technologies |
Description: MOSFET N-CH 100V 17A D2PAKPackaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
BTH500301LUAAUMA1 | Infineon Technologies |
Description: MULTICHIP PROFET & GDPackaging: Tape & Reel (TR) Features: Slew Rate Controlled Package / Case: 8-PowerSFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: Logic Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 3mOhm Input Type: Non-Inverting Voltage - Load: 8V ~ 60V Voltage - Supply (Vcc/Vdd): 8V ~ 60V Current - Output (Max): 25A Ratio - Input:Output: 1:1 Supplier Device Package: PG-HSOF-8-6 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Short Circuit Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
BTH500301LUAAUMA1 | Infineon Technologies |
Description: MULTICHIP PROFET & GDPackaging: Cut Tape (CT) Features: Slew Rate Controlled Package / Case: 8-PowerSFN Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Interface: Logic Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 3mOhm Input Type: Non-Inverting Voltage - Load: 8V ~ 60V Voltage - Supply (Vcc/Vdd): 8V ~ 60V Current - Output (Max): 25A Ratio - Input:Output: 1:1 Supplier Device Package: PG-HSOF-8-6 Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Short Circuit Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2362 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
REF60100EDPSTOBO1 | Infineon Technologies |
Description: REF60100EDPSTOBO1Packaging: Box Contents: Board(s) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IAUTN08S5N012LATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 80V 300A PG-HSOFPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Configuration: 2 N-Channel, Common Drain, Common Source Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 375W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 3.3V @ 275µA Supplier Device Package: PG-HSOF-8-2 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1981 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IAUTN08S5N012LATMA1 | Infineon Technologies |
Description: MOSFET 2N-CH 80V 300A PG-HSOFPackaging: Tray Package / Case: 8-PowerSFN Mounting Type: Surface Mount Configuration: 2 N-Channel, Common Drain, Common Source Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 375W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 3.3V @ 275µA Supplier Device Package: PG-HSOF-8-2 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
IM64A130AXTMA1 | Infineon Technologies |
Description: XENSIV - IM64A130A Automotive MEQualification: AEC-Q103 Frequency Range: 10 Hz ~ 10 kHz Voltage Range: 2.4 V ~ 3.6 V Current - Supply: 135 µA Impedance: 400 Ohms Voltage - Rated: 2.6 V Grade: Automotive Height (Max): 0.042" (1.06mm) Port Location: Bottom Ratings: IP57 - Dust Protected, Waterproof Direction: Omnidirectional Termination: Solder Pads S/N Ratio: 64dB Type: MEMS (Silicon) Shape: Rectangular Sensitivity: -38dB ±1dB @ 94dB SPL Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm) Output Type: Analog Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
|
IM64A130AXTMA1 | Infineon Technologies |
Description: XENSIV - IM64A130A Automotive MEQualification: AEC-Q103 Frequency Range: 10 Hz ~ 10 kHz Voltage Range: 2.4 V ~ 3.6 V Current - Supply: 135 µA Impedance: 400 Ohms Voltage - Rated: 2.6 V Grade: Automotive Height (Max): 0.042" (1.06mm) Port Location: Bottom Ratings: IP57 - Dust Protected, Waterproof Direction: Omnidirectional Termination: Solder Pads S/N Ratio: 64dB Type: MEMS (Silicon) Shape: Rectangular Sensitivity: -38dB ±1dB @ 94dB SPL Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm) Output Type: Analog Packaging: Cut Tape (CT) |
на замовлення 4699 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CY2309SXI-1 | Infineon Technologies |
Description: IC FANOUT BUFFER 16SOICPackaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 133.33MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: LVCMOS, LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:9 Differential - Input:Output: No/No Supplier Device Package: 16-SOIC PLL: Yes with Bypass Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 675 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CY2309SXC-1H | Infineon Technologies |
Description: IC FANOUT BUFFER 16SOICPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 133.33MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: LVCMOS, LVTTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:9 Differential - Input:Output: No/No Supplier Device Package: 16-SOIC PLL: Yes with Bypass Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 1663 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CY2309SXC-1H | Infineon Technologies |
Description: IC FANOUT BUFFER 16SOICPackaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 133.33MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: LVCMOS, LVTTL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:9 Differential - Input:Output: No/No Supplier Device Package: 16-SOIC PLL: Yes with Bypass Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 844 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| CYW20734UA2KFFB3GT | Infineon Technologies |
Description: IC RF TXRX+MCU BLE 90FBGAPackaging: Tape & Reel (TR) Package / Case: 90-TFBGA Sensitivity: -96.5dBm Mounting Type: Surface Mount Frequency: 2.4GHz Memory Size: 352kB RAM, 848kB ROM Type: TxRx + MCU Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.62V ~ 3.6V Protocol: Bluetooth v4.1 Data Rate (Max): 6Mbps Supplier Device Package: 90-FBGA (8.5x8.5) GPIO: 39 Modulation: 4-DQPSK, 8-DPSK RF Family/Standard: Bluetooth Serial Interfaces: I2C, SPI, UART |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||||
|
TLD60982BSEVALTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLD6098Outputs and Type: 2 Non-Isolated Outputs Utilized IC / Part: TLD6098 Current - Output / Channel: 1A Contents: Board(s) Voltage - Input: 8V ~ 27V Voltage - Output: 3V ~ 59V Packaging: Bulk |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TLD60982DPVB2GEVALTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLD60982ESPackaging: Bulk Voltage - Output: 43V ~ 52V Voltage - Input: 8V ~ 27V Current - Output: 7A, 7A Contents: Board(s) Frequency - Switching: 200kHz Regulator Topology: Boost Utilized IC / Part: TLD6098-2ES Main Purpose: DC/DC, Step Up Outputs and Type: 2 Non-Isolated Outputs |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IKWH50N67PR7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 670V 105A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A Supplier Device Package: PG-TO247-3-32 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/182ns Switching Energy: 980µJ (on), 560µJ (off) Test Condition: 400V, 50A, 9.8Ohm, 15V Gate Charge: 127 nC Current - Collector (Ic) (Max): 105 A Voltage - Collector Emitter Breakdown (Max): 670 V Current - Collector Pulsed (Icm): 150 A Power - Max: 246 W |
на замовлення 154 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
REFSSRACDC2ATOBO1 | Infineon Technologies |
Description: REFSSRACDC2ATOBO1Embedded: No Contents: Board(s) Type: Interface Function: Relay Packaging: Box |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| CY2548C004 | Infineon Technologies |
Description: TSBUPackaging: Tray DigiKey Programmable: Not Verified |
на замовлення 5598 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
| CY25422SXC-002 | Infineon Technologies |
Description: TSBUPackaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 393 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
|
CY25404ZXI014 | Infineon Technologies |
Description: TSBUPackaging: Bulk DigiKey Programmable: Not Verified |
на замовлення 3220 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CY2X013LXI200T | Infineon Technologies |
Description: TSBUPackaging: Bulk |
на замовлення 445 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CY2XF24LXI702T | Infineon Technologies |
Description: TSBUPackaging: Bulk |
на замовлення 5783 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SIGC19T60SEX1SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600VPackaging: Bulk Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 40A Supplier Device Package: Die IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| MB95F564KPF-G-UNE2 | Infineon Technologies |
Description: IC MCU 8BIT 20KB FLASH 20SOPPackaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 20KB (20K x 8) RAM Size: 496 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: F²MC-8FX Data Converters: A/D 6x8/10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V Connectivity: LINbus, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 20-SOIC Number of I/O: 17 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
ISP16DP10LMAXTSA1 | Infineon Technologies |
Description: ISP16DP10LMAXTSA1Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3.9A (Tc) Rds On (Max) @ Id, Vgs: 167mOhm @ 2.2A, 10V Power Dissipation (Max): 1.8W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.037mA Supplier Device Package: PG-SOT223-4-21 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
|
ISP16DP10LMAXTSA1 | Infineon Technologies |
Description: ISP16DP10LMAXTSA1Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3.9A (Tc) Rds On (Max) @ Id, Vgs: 167mOhm @ 2.2A, 10V Power Dissipation (Max): 1.8W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.037mA Supplier Device Package: PG-SOT223-4-21 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 570 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| CG9201AM | Infineon Technologies |
Description: IC MEMORY Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CG9201AMT | Infineon Technologies |
Description: IC MEMORY Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
BB 659C E7902 | Infineon Technologies |
Description: DIODE VARACTOR 30V SNGLE SCD-80Packaging: Tape & Reel (TR) Package / Case: SC-80 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz Capacitance Ratio Condition: C1/C28 Supplier Device Package: SCD-80 Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 15.3 |
товару немає в наявності |
Мінімальне замовлення: 45000 шт В кошику од. на суму грн. | ||||||||||||||||
|
BB 659C E7912 | Infineon Technologies |
Description: DIODE VARIABLE 30V 20MA SCD-80Packaging: Tape & Reel (TR) Package / Case: SC-80 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz Capacitance Ratio Condition: C1/C28 Supplier Device Package: SCD-80 Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 15.3 |
товару немає в наявності |
Мінімальне замовлення: 40000 шт В кошику од. на суму грн. | ||||||||||||||||
|
BB 659C-02V E7912 | Infineon Technologies |
Description: DIODE VARIABLE 30V 20MA SC-79Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz Capacitance Ratio Condition: C1/C28 Supplier Device Package: PG-SC79-2 Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 15.3 |
товару немає в наявності |
Мінімальне замовлення: 40000 шт В кошику од. на суму грн. | ||||||||||||||||
|
BB 664 E7902 | Infineon Technologies |
Description: DIODE VARACTOR 30V SNGLE SCD-80Packaging: Tape & Reel (TR) Package / Case: SC-80 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz Capacitance Ratio Condition: C1/C28 Supplier Device Package: SCD-80 Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 17.8 |
товару немає в наявності |
Мінімальне замовлення: 45000 шт В кошику од. на суму грн. | ||||||||||||||||
|
BB 689 E7902 | Infineon Technologies |
Description: DIODE VAR CAP 30V 20MA SCD-80Packaging: Tape & Reel (TR) Package / Case: SC-80 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz Capacitance Ratio Condition: C1/C28 Supplier Device Package: SCD-80 Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 23.2 |
товару немає в наявності |
Мінімальне замовлення: 39000 шт В кошику од. на суму грн. | ||||||||||||||||
|
BB 689 E7908 | Infineon Technologies |
Description: DIODE VAR CAP 30V 20MA SCD-80Packaging: Tape & Reel (TR) Package / Case: SC-80 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz Capacitance Ratio Condition: C1/C28 Supplier Device Package: SCD-80 Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 23.2 |
товару немає в наявності |
Мінімальне замовлення: 39000 шт В кошику од. на суму грн. | ||||||||||||||||
|
SD 199 E6327 | Infineon Technologies |
Description: DIODE VARACTOR RF SOD-323Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 3.3pF @ 28V, 1MHz Capacitance Ratio Condition: C1/C28 Supplier Device Package: PG-SOD323-3D Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 25.0 |
товару немає в наявності |
Мінімальне замовлення: 21000 шт В кошику од. на суму грн. | ||||||||||||||||
|
BB 659 E7908 | Infineon Technologies |
Description: DIODE VAR CAP 30V 20MA SCD-80Packaging: Tape & Reel (TR) Package / Case: SC-80 Mounting Type: Surface Mount Diode Type: Single Operating Temperature: -55°C ~ 150°C (TJ) Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz Capacitance Ratio Condition: C1/C28 Supplier Device Package: SCD-80 Voltage - Peak Reverse (Max): 30 V Capacitance Ratio: 14.7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
CY8C4146AZQ-S433 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 64TQFPDigiKey Programmable: Not Verified Number of I/O: 36 Supplier Device Package: 64-TQFP (10x10) Peripherals: Brown-out Detect/Reset, CapSense, LVD, POR, PWM, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 8K x 8 Program Memory Size: 64KB (64K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tray |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
ISZ053N08NM6ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: PG-TSDSON-8-34 Vgs(th) (Max) @ Id: 3.5V @ 36µA Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
|
ISZ053N08NM6ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Supplier Device Package: PG-TSDSON-8-34 Vgs(th) (Max) @ Id: 3.5V @ 36µA Power Dissipation (Max): 2.5W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 90A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
CY25200KFZXC | Infineon Technologies |
Description: IC CLOCK GEN PROG SPECT 16-TSSOPPackaging: Tube Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: VDDL Frequency - Max: 200MHz Type: Fanout Buffer (Distribution), Spread Spectrum Clock Generator Input: Clock, Crystal Operating Temperature: 0°C ~ 70°C Voltage - Supply: 2.375V ~ 3.465V Ratio - Input:Output: 1:6 Differential - Input:Output: No/No Supplier Device Package: 16-TSSOP PLL: Yes with Bypass Divider/Multiplier: Yes/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 642 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IRFI4110GPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 72A TO220AB FPInput Capacitance (Ciss) (Max) @ Vds: 9540 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220AB Full-Pak Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 61W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 43A, 10V Current - Continuous Drain (Id) @ 25°C: 72A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
на замовлення 2950 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
SICMOSFET | Infineon Technologies |
Description: SILICON CARBIDE MOSFET KIT Packaging: Book Mounting Type: Surface Mount Quantity: 30 Pieces (6 Values - 5 Each) Kit Type: MOSFETs |
на замовлення 9 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IPT009N08NM6ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 278µA Supplier Device Package: PG-HSOF-8-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
KIT_XMC4X_HMI_OLED_001 | Infineon Technologies |
Description: KIT INTERFACE FOR XMC4500Utilized IC / Part: XMC4500 Accessory Type: OLED Display For Use With/Related Products: XMC4500 Packaging: Box |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CY8C4147AZI-S463 | Infineon Technologies |
Description: IC MCU 32BIT 128MB FLASH 64LQFP Number of I/O: 38 Supplier Device Package: 64-TQFP (10x10) Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x10/12b SAR; D/A 2x7b Core Processor: ARM® Cortex®-M0+ Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 16K x 8 Program Memory Size: 128KB (128K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 64-LQFP Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | ||||||||||||||||
|
EVAL2EDL803XF5BTOBO1 | Infineon Technologies |
Description: EVAL2EDL803XF5BTOBO1 Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. |
| T1500N18TOFVTXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 3500A DO-200AB
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 1500 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 500 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Bulk
Description: SCR MODULE 1.8KV 3500A DO-200AB
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 1500 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 500 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Bulk
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 22507.19 грн |
| T2600N16TOFVTXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 4100A TO-200AD
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 2610 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AD
Packaging: Tray
Description: SCR MODULE 1.8KV 4100A TO-200AD
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 2610 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AD
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| T2600N18TOFVTXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 4100A TO-200AD
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 2610 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AD
Packaging: Tray
Description: SCR MODULE 1.8KV 4100A TO-200AD
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 4100 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 2610 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AD
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| T3800N18TOFVTXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 5970A TO-200AE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3800 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AE
Packaging: Tray
Description: SCR MODULE 1.8KV 5970A TO-200AE
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 5970 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (AV)) (Max): 3800 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 63000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 300 mA
Structure: Single
Operating Temperature: 135°C (TJ)
Mounting Type: Chassis Mount
Package / Case: TO-200AE
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| IGD08N120S7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IGD08N120S7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
Description: IGBT TRENCH FS 1200V 24A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/149ns
Switching Energy: 460µJ (on), 410µJ (off)
Test Condition: 600V, 8A, 20Ohm, 15V
Gate Charge: 55 nC
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 106 W
на замовлення 2462 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 185.98 грн |
| 10+ | 114.84 грн |
| 100+ | 78.13 грн |
| 500+ | 58.55 грн |
| 1000+ | 53.80 грн |
| ISC0605NLSATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.3V @ 115µA
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: TRENCH 40<-<100V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 4.5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 2.3V @ 115µA
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IPB160N04S203ATMA4 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO263-7
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Bulk
Description: MOSFET N-CH 40V 160A TO263-7
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-7-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Bulk
на замовлення 207282 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 114+ | 176.02 грн |
| IRG4IBC20WPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 12A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 22ns/110ns
Switching Energy: 60µJ (on), 80µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 26 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 34 W
Description: IGBT 600V 12A TO220AB FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 6.5A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 22ns/110ns
Switching Energy: 60µJ (on), 80µJ (off)
Test Condition: 480V, 6.5A, 50Ohm, 15V
Gate Charge: 26 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 52 A
Power - Max: 34 W
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 267+ | 73.61 грн |
| 1EDF5673KXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: DGT ISO 1.5KV 1CH GT DVR TFLGA13
Packaging: Bulk
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 8A
Voltage - Isolation: 1500VDC
Approval Agency: CQC, CSA, UL, VDE
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 44ns, 44ns
Pulse Width Distortion (Max): 18ns (Typ)
Number of Channels: 1
Voltage - Output Supply: 3.13V ~ 3.47V
Description: DGT ISO 1.5KV 1CH GT DVR TFLGA13
Packaging: Bulk
Package / Case: 13-TFLGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Technology: Magnetic Coupling
Current - Output High, Low: 4A, 8A
Voltage - Isolation: 1500VDC
Approval Agency: CQC, CSA, UL, VDE
Supplier Device Package: PG-TFLGA-13-1
Rise / Fall Time (Typ): 6.5ns, 4.5ns
Common Mode Transient Immunity (Min): 150V/ns
Propagation Delay tpLH / tpHL (Max): 44ns, 44ns
Pulse Width Distortion (Max): 18ns (Typ)
Number of Channels: 1
Voltage - Output Supply: 3.13V ~ 3.47V
на замовлення 25986 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 167+ | 118.55 грн |
| CY7C1380KV33-250AXC |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Access Time: 2.6 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Description: IC SRAM 18MBIT PAR 100TQFP
DigiKey Programmable: Not Verified
Memory Organization: 512K x 36
Access Time: 2.6 ns
Memory Interface: Parallel
Supplier Device Package: 100-TQFP (14x20)
Memory Format: SRAM
Clock Frequency: 250 MHz
Technology: SRAM - Synchronous, SDR
Voltage - Supply: 3.135V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Memory Type: Volatile
Memory Size: 18Mbit
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 144 шт
В кошику
од. на суму грн.
| DD104N08KAHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE MOD GP 800V 104A POWRBLOK
Packaging: Bulk
Package / Case: POW-R-BLOK™ Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 104A
Supplier Device Package: POW-R-BLOK™ Module
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
Description: DIODE MOD GP 800V 104A POWRBLOK
Packaging: Bulk
Package / Case: POW-R-BLOK™ Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 104A
Supplier Device Package: POW-R-BLOK™ Module
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
товару немає в наявності
В кошику
од. на суму грн.
| IRFS4410TRLPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 88A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Description: MOSFET N-CH 100V 88A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO263-3
Vgs(th) (Max) @ Id: 4V @ 150µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 58A, 10V
Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
на замовлення 842 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 146+ | 152.00 грн |
| S29GL512T12DHN013 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 120 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Description: IC FLASH 512MBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Access Time: 120 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2200 шт
В кошику
од. на суму грн.
| S29GL01GT12DHN013 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 120 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 128M x 8
Access Time: 120 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (9x9)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2200 шт
В кошику
од. на суму грн.
| BTH500301LUAAUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MULTICHIP PROFET & GD
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Description: MULTICHIP PROFET & GD
Packaging: Tape & Reel (TR)
Features: Slew Rate Controlled
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 208.78 грн |
| BTH500301LUAAUMA1 |
![]() |
Виробник: Infineon Technologies
Description: MULTICHIP PROFET & GD
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
Description: MULTICHIP PROFET & GD
Packaging: Cut Tape (CT)
Features: Slew Rate Controlled
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 3mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 25A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Load, Over Temperature, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2362 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 535.46 грн |
| 10+ | 349.08 грн |
| 100+ | 254.79 грн |
| 500+ | 230.94 грн |
| IAUTN08S5N012LATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1981 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 402.18 грн |
| 10+ | 295.57 грн |
| 25+ | 272.78 грн |
| 100+ | 232.47 грн |
| 250+ | 221.25 грн |
| 500+ | 214.49 грн |
| 1000+ | 205.50 грн |
| IAUTN08S5N012LATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Tray
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Tray
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IM64A130AXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: XENSIV - IM64A130A Automotive ME
Qualification: AEC-Q103
Frequency Range: 10 Hz ~ 10 kHz
Voltage Range: 2.4 V ~ 3.6 V
Current - Supply: 135 µA
Impedance: 400 Ohms
Voltage - Rated: 2.6 V
Grade: Automotive
Height (Max): 0.042" (1.06mm)
Port Location: Bottom
Ratings: IP57 - Dust Protected, Waterproof
Direction: Omnidirectional
Termination: Solder Pads
S/N Ratio: 64dB
Type: MEMS (Silicon)
Shape: Rectangular
Sensitivity: -38dB ±1dB @ 94dB SPL
Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm)
Output Type: Analog
Packaging: Tape & Reel (TR)
Description: XENSIV - IM64A130A Automotive ME
Qualification: AEC-Q103
Frequency Range: 10 Hz ~ 10 kHz
Voltage Range: 2.4 V ~ 3.6 V
Current - Supply: 135 µA
Impedance: 400 Ohms
Voltage - Rated: 2.6 V
Grade: Automotive
Height (Max): 0.042" (1.06mm)
Port Location: Bottom
Ratings: IP57 - Dust Protected, Waterproof
Direction: Omnidirectional
Termination: Solder Pads
S/N Ratio: 64dB
Type: MEMS (Silicon)
Shape: Rectangular
Sensitivity: -38dB ±1dB @ 94dB SPL
Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm)
Output Type: Analog
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IM64A130AXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: XENSIV - IM64A130A Automotive ME
Qualification: AEC-Q103
Frequency Range: 10 Hz ~ 10 kHz
Voltage Range: 2.4 V ~ 3.6 V
Current - Supply: 135 µA
Impedance: 400 Ohms
Voltage - Rated: 2.6 V
Grade: Automotive
Height (Max): 0.042" (1.06mm)
Port Location: Bottom
Ratings: IP57 - Dust Protected, Waterproof
Direction: Omnidirectional
Termination: Solder Pads
S/N Ratio: 64dB
Type: MEMS (Silicon)
Shape: Rectangular
Sensitivity: -38dB ±1dB @ 94dB SPL
Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm)
Output Type: Analog
Packaging: Cut Tape (CT)
Description: XENSIV - IM64A130A Automotive ME
Qualification: AEC-Q103
Frequency Range: 10 Hz ~ 10 kHz
Voltage Range: 2.4 V ~ 3.6 V
Current - Supply: 135 µA
Impedance: 400 Ohms
Voltage - Rated: 2.6 V
Grade: Automotive
Height (Max): 0.042" (1.06mm)
Port Location: Bottom
Ratings: IP57 - Dust Protected, Waterproof
Direction: Omnidirectional
Termination: Solder Pads
S/N Ratio: 64dB
Type: MEMS (Silicon)
Shape: Rectangular
Sensitivity: -38dB ±1dB @ 94dB SPL
Size / Dimension: 0.132" L x 0.098" W (3.35mm x 2.50mm)
Output Type: Analog
Packaging: Cut Tape (CT)
на замовлення 4699 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.21 грн |
| 10+ | 72.68 грн |
| 25+ | 67.01 грн |
| 50+ | 59.12 грн |
| 100+ | 55.58 грн |
| 250+ | 52.35 грн |
| CY2309SXI-1 |
![]() |
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 675 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1503.32 грн |
| 10+ | 1164.01 грн |
| 25+ | 1093.22 грн |
| 100+ | 1024.26 грн |
| CY2309SXC-1H |
![]() |
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 1663 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 63+ | 351.82 грн |
| CY2309SXC-1H |
![]() |
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 844 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 454.10 грн |
| 10+ | 338.18 грн |
| 25+ | 313.41 грн |
| 100+ | 275.22 грн |
| CYW20734UA2KFFB3GT |
![]() |
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 90FBGA
Packaging: Tape & Reel (TR)
Package / Case: 90-TFBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 352kB RAM, 848kB ROM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.62V ~ 3.6V
Protocol: Bluetooth v4.1
Data Rate (Max): 6Mbps
Supplier Device Package: 90-FBGA (8.5x8.5)
GPIO: 39
Modulation: 4-DQPSK, 8-DPSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
Description: IC RF TXRX+MCU BLE 90FBGA
Packaging: Tape & Reel (TR)
Package / Case: 90-TFBGA
Sensitivity: -96.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 352kB RAM, 848kB ROM
Type: TxRx + MCU
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.62V ~ 3.6V
Protocol: Bluetooth v4.1
Data Rate (Max): 6Mbps
Supplier Device Package: 90-FBGA (8.5x8.5)
GPIO: 39
Modulation: 4-DQPSK, 8-DPSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLD60982BSEVALTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLD6098
Outputs and Type: 2 Non-Isolated Outputs
Utilized IC / Part: TLD6098
Current - Output / Channel: 1A
Contents: Board(s)
Voltage - Input: 8V ~ 27V
Voltage - Output: 3V ~ 59V
Packaging: Bulk
Description: EVAL BOARD FOR TLD6098
Outputs and Type: 2 Non-Isolated Outputs
Utilized IC / Part: TLD6098
Current - Output / Channel: 1A
Contents: Board(s)
Voltage - Input: 8V ~ 27V
Voltage - Output: 3V ~ 59V
Packaging: Bulk
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11901.03 грн |
| TLD60982DPVB2GEVALTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLD60982ES
Packaging: Bulk
Voltage - Output: 43V ~ 52V
Voltage - Input: 8V ~ 27V
Current - Output: 7A, 7A
Contents: Board(s)
Frequency - Switching: 200kHz
Regulator Topology: Boost
Utilized IC / Part: TLD6098-2ES
Main Purpose: DC/DC, Step Up
Outputs and Type: 2 Non-Isolated Outputs
Description: EVAL BOARD FOR TLD60982ES
Packaging: Bulk
Voltage - Output: 43V ~ 52V
Voltage - Input: 8V ~ 27V
Current - Output: 7A, 7A
Contents: Board(s)
Frequency - Switching: 200kHz
Regulator Topology: Boost
Utilized IC / Part: TLD6098-2ES
Main Purpose: DC/DC, Step Up
Outputs and Type: 2 Non-Isolated Outputs
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 27905.20 грн |
| IKWH50N67PR7XKSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 670V 105A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/182ns
Switching Energy: 980µJ (on), 560µJ (off)
Test Condition: 400V, 50A, 9.8Ohm, 15V
Gate Charge: 127 nC
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 670 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 246 W
Description: IGBT TRENCH FS 670V 105A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 50A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/182ns
Switching Energy: 980µJ (on), 560µJ (off)
Test Condition: 400V, 50A, 9.8Ohm, 15V
Gate Charge: 127 nC
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 670 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 246 W
на замовлення 154 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 322.36 грн |
| 30+ | 170.71 грн |
| 120+ | 139.75 грн |
| REFSSRACDC2ATOBO1 |
![]() |
Виробник: Infineon Technologies
Description: REFSSRACDC2ATOBO1
Embedded: No
Contents: Board(s)
Type: Interface
Function: Relay
Packaging: Box
Description: REFSSRACDC2ATOBO1
Embedded: No
Contents: Board(s)
Type: Interface
Function: Relay
Packaging: Box
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3032.21 грн |
| CY2548C004 |
![]() |
на замовлення 5598 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 91+ | 247.03 грн |
| CY25422SXC-002 |
![]() |
на замовлення 393 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 37+ | 615.72 грн |
| CY25404ZXI014 |
![]() |
на замовлення 3220 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 34+ | 672.83 грн |
| CY2X013LXI200T |
![]() |
на замовлення 445 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 31+ | 733.66 грн |
| CY2XF24LXI702T |
![]() |
на замовлення 5783 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 25+ | 905.77 грн |
| SIGC19T60SEX1SA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 40A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Description: IGBT 3 CHIP 600V
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.97V @ 15V, 40A
Supplier Device Package: Die
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
товару немає в наявності
В кошику
од. на суму грн.
| MB95F564KPF-G-UNE2 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 20KB FLASH 20SOP
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-SOIC
Number of I/O: 17
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 20KB FLASH 20SOP
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 20KB (20K x 8)
RAM Size: 496 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-SOIC
Number of I/O: 17
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| ISP16DP10LMAXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: ISP16DP10LMAXTSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 167mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.037mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Qualification: AEC-Q101
Description: ISP16DP10LMAXTSA1
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 167mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.037mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| ISP16DP10LMAXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: ISP16DP10LMAXTSA1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 167mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.037mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Qualification: AEC-Q101
Description: ISP16DP10LMAXTSA1
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 167mOhm @ 2.2A, 10V
Power Dissipation (Max): 1.8W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.037mA
Supplier Device Package: PG-SOT223-4-21
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 50 V
Qualification: AEC-Q101
на замовлення 570 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 163.51 грн |
| 10+ | 100.36 грн |
| 100+ | 67.74 грн |
| 500+ | 50.46 грн |
| BB 659C E7902 |
![]() |
Виробник: Infineon Technologies
Description: DIODE VARACTOR 30V SNGLE SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Description: DIODE VARACTOR 30V SNGLE SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
товару немає в наявності
Мінімальне замовлення: 45000 шт
В кошику
од. на суму грн.
| BB 659C E7912 |
![]() |
Виробник: Infineon Technologies
Description: DIODE VARIABLE 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Description: DIODE VARIABLE 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
товару немає в наявності
Мінімальне замовлення: 40000 шт
В кошику
од. на суму грн.
| BB 659C-02V E7912 |
![]() |
Виробник: Infineon Technologies
Description: DIODE VARIABLE 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
Description: DIODE VARIABLE 30V 20MA SC-79
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SC79-2
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 15.3
товару немає в наявності
Мінімальне замовлення: 40000 шт
В кошику
од. на суму грн.
| BB 664 E7902 |
![]() |
Виробник: Infineon Technologies
Description: DIODE VARACTOR 30V SNGLE SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 17.8
Description: DIODE VARACTOR 30V SNGLE SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 17.8
товару немає в наявності
Мінімальне замовлення: 45000 шт
В кошику
од. на суму грн.
| BB 689 E7902 |
![]() |
Виробник: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
Description: DIODE VAR CAP 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
товару немає в наявності
Мінімальне замовлення: 39000 шт
В кошику
од. на суму грн.
| BB 689 E7908 |
![]() |
Виробник: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
Description: DIODE VAR CAP 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 23.2
товару немає в наявності
Мінімальне замовлення: 39000 шт
В кошику
од. на суму грн.
| SD 199 E6327 |
![]() |
Виробник: Infineon Technologies
Description: DIODE VARACTOR RF SOD-323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 3.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 25.0
Description: DIODE VARACTOR RF SOD-323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 3.3pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: PG-SOD323-3D
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 25.0
товару немає в наявності
Мінімальне замовлення: 21000 шт
В кошику
од. на суму грн.
| BB 659 E7908 |
![]() |
Виробник: Infineon Technologies
Description: DIODE VAR CAP 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 14.7
Description: DIODE VAR CAP 30V 20MA SCD-80
Packaging: Tape & Reel (TR)
Package / Case: SC-80
Mounting Type: Surface Mount
Diode Type: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
Capacitance Ratio Condition: C1/C28
Supplier Device Package: SCD-80
Voltage - Peak Reverse (Max): 30 V
Capacitance Ratio: 14.7
товару немає в наявності
В кошику
од. на суму грн.
| CY8C4146AZQ-S433 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 64TQFP
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Description: IC MCU 32BIT 64KB FLASH 64TQFP
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LVD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x10b, 16x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 8K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 347.93 грн |
| 10+ | 254.90 грн |
| 25+ | 234.82 грн |
| 80+ | 202.45 грн |
| 230+ | 190.56 грн |
| 500+ | 183.80 грн |
| 1000+ | 175.97 грн |
| 2500+ | 170.88 грн |
| ISZ053N08NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TSDSON-8-34
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TSDSON-8-34
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| ISZ053N08NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TSDSON-8-34
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: PG-TSDSON-8-34
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 90A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
товару немає в наявності
В кошику
од. на суму грн.
| CY25200KFZXC |
![]() |
Виробник: Infineon Technologies
Description: IC CLOCK GEN PROG SPECT 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: VDDL
Frequency - Max: 200MHz
Type: Fanout Buffer (Distribution), Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK GEN PROG SPECT 16-TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: VDDL
Frequency - Max: 200MHz
Type: Fanout Buffer (Distribution), Spread Spectrum Clock Generator
Input: Clock, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.375V ~ 3.465V
Ratio - Input:Output: 1:6
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: Yes/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 642 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 163.51 грн |
| IRFI4110GPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 72A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 9540 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 61W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: MOSFET N-CH 100V 72A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 9540 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 61W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 43A, 10V
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 127+ | 157.95 грн |
| SICMOSFET |
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET KIT
Packaging: Book
Mounting Type: Surface Mount
Quantity: 30 Pieces (6 Values - 5 Each)
Kit Type: MOSFETs
Description: SILICON CARBIDE MOSFET KIT
Packaging: Book
Mounting Type: Surface Mount
Quantity: 30 Pieces (6 Values - 5 Each)
Kit Type: MOSFETs
на замовлення 9 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 9136.94 грн |
| IPT009N08NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 278µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 278µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 283.64 грн |
| KIT_XMC4X_HMI_OLED_001 |
![]() |
Виробник: Infineon Technologies
Description: KIT INTERFACE FOR XMC4500
Utilized IC / Part: XMC4500
Accessory Type: OLED Display
For Use With/Related Products: XMC4500
Packaging: Box
Description: KIT INTERFACE FOR XMC4500
Utilized IC / Part: XMC4500
Accessory Type: OLED Display
For Use With/Related Products: XMC4500
Packaging: Box
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 8892.84 грн |
| CY8C4147AZI-S463 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128MB FLASH 64LQFP
Number of I/O: 38
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10/12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
Description: IC MCU 32BIT 128MB FLASH 64LQFP
Number of I/O: 38
Supplier Device Package: 64-TQFP (10x10)
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x10/12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
од. на суму грн.



































