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S25FL256LAGMFI000 S25FL256LAGMFI000 Infineon Technologies Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224 Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 896 шт:
термін постачання 21-31 дні (днів)
2+327.03 грн
10+279.51 грн
25+266.54 грн
40+244.12 грн
80+235.51 грн
240+222.44 грн
480+211.05 грн
Мінімальне замовлення: 2
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XMC4104Q48F128ABXUMA1 XMC4104Q48F128ABXUMA1 Infineon Technologies Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-53
Number of I/O: 21
DigiKey Programmable: Not Verified
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TLE4943CXAMA1 Infineon Technologies Infineon-TLE4943C-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c484bd04016f6 Description: MAG SWITCH SPECIAL PURP SPEED
Packaging: Tape & Box (TB)
Function: Special Purpose
Technology: Hall Effect
товару немає в наявності
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IPB70P04P409ATMA1 IPB70P04P409ATMA1 Infineon Technologies Infineon-IPP_B_I70P04P4_09-DS-v01_03-en.pdf?fileId=db3a30432f69f146012f782d29312e0f Description: MOSFET N-CH 40V 72A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
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IPB70P04P409ATMA2 IPB70P04P409ATMA2 Infineon Technologies Infineon-IPP_B_I70P04P4_09-DS-v01_03-en.pdf?fileId=db3a30432f69f146012f782d29312e0f Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
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SP49T0512XTMA1 SP49T0512XTMA1 Infineon Technologies Infineon-SP49T-05-12-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c901008d10190124b254d035f Description: TPMS
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: I2C
Mounting Type: Surface Mount
Output: 32 b
Operating Pressure: 14.5PSI ~ 232.06PSI (100kPa ~ 1600kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Industrial Automation
Supplier Device Package: PG-DSOSP-14-84
Port Style: No Port
Maximum Pressure: 362.59PSI (2500kPa)
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLD5098EPB2GEVALKITTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLD5098EP
Features: Dimmable
Packaging: Bulk
Voltage - Output: 30V ~ 54V
Voltage - Input: 8V ~ 27V
Contents: Board(s)
Current - Output / Channel: 350mA
Utilized IC / Part: TLD5098EP
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
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TLD5098EPB2BEVALKITTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLD5098EP
Features: Dimmable
Packaging: Bulk
Voltage - Output: 16V ~ 23V
Voltage - Input: 8V ~ 27V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: TLD5098EP
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
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TLD5098EPSEPICEVALTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLD5098EP
Features: Dimmable
Packaging: Bulk
Voltage - Output: 6V ~ 23V
Voltage - Input: 8V ~ 27V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: TLD5098EP
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
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CY7C1518AV18-250BZC CY7C1518AV18-250BZC Infineon Technologies CY7C1518%2C20AV18.pdf Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1518KV18-250BZI CY7C1518KV18-250BZI Infineon Technologies Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611 Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
на замовлення 64 шт:
термін постачання 21-31 дні (днів)
3+9169.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY7C1518KV18-250BZI CY7C1518KV18-250BZI Infineon Technologies Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611 Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
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CY7C1518V18-200BZC CY7C1518V18-200BZC Infineon Technologies CY7C15%2816%2C18%2C20%2C27%29V18_8.pdf Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
на замовлення 98 шт:
термін постачання 21-31 дні (днів)
2+11972.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRF9952QTR AUIRF9952QTR Infineon Technologies AUIRF9952Q.pdf Description: MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
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CY7C199C-15ZC CY7C199C-15ZC Infineon Technologies CY7C199C%20RevC.pdf Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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TLS820F3ELV33XUMA1 TLS820F3ELV33XUMA1 Infineon Technologies Infineon-TLS820F3ELV33-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8929aa4d0189dafdc6263c11 Description: IC REG LINEAR OPTIREG
Packaging: Cut Tape (CT)
на замовлення 2489 шт:
термін постачання 21-31 дні (днів)
3+139.44 грн
10+95.11 грн
25+85.33 грн
100+70.01 грн
250+65.20 грн
500+62.30 грн
1000+58.93 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CYPD3172P-24LQXQT CYPD3172P-24LQXQT Infineon Technologies Infineon-CCG3PA-NFET_Overview-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017e90803aca0b63&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: EZ-PD CCG3PA-NFET
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
RAM Size: 4K x 8
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 6
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
3+133.63 грн
10+94.31 грн
25+85.87 грн
100+71.83 грн
250+67.66 грн
500+65.14 грн
1000+62.04 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CYPD3173P-24LQXQT CYPD3173P-24LQXQT Infineon Technologies Infineon-CCG3PA-NFET_Overview-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017e90803aca0b63&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: EZ-PD CCG3PA-NFET
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
RAM Size: 4K x 8
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 6
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
3+134.46 грн
10+94.87 грн
25+86.32 грн
100+72.21 грн
250+68.02 грн
500+65.49 грн
1000+62.37 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FS150R12KT4PB11BPSA1 FS150R12KT4PB11BPSA1 Infineon Technologies Infineon-FS150R12KT4-DS-v02_01-en_jp.pdf?fileId=db3a30433df41259013df438b6d4004c Description: MOD IGBT LOW PWR ECONO3-4
Packaging: Tray
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+8486.90 грн
В кошику  од. на суму  грн.
CYT4DNJBRCQ1BZSGST CYT4DNJBRCQ1BZSGST Infineon Technologies Description: IC MCU 32BIT 6.188MB FLSH 327BGA
Packaging: Tape & Reel (TR)
Package / Case: 327-BGA
Mounting Type: Surface Mount
Speed: 320MHz
Program Memory Size: 6.188MB (6.188M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-BGA
Number of I/O: 168
DigiKey Programmable: Not Verified
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
700+2602.87 грн
Мінімальне замовлення: 700
В кошику  од. на суму  грн.
CYT4DNJBRCQ1BZSGST CYT4DNJBRCQ1BZSGST Infineon Technologies Description: IC MCU 32BIT 6.188MB FLSH 327BGA
Packaging: Cut Tape (CT)
Package / Case: 327-BGA
Mounting Type: Surface Mount
Speed: 320MHz
Program Memory Size: 6.188MB (6.188M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-BGA
Number of I/O: 168
DigiKey Programmable: Not Verified
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
1+4052.96 грн
10+3113.17 грн
25+2915.65 грн
100+2532.51 грн
250+2435.35 грн
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CY95F562KNPFT-G-UNE2 CY95F562KNPFT-G-UNE2 Infineon Technologies Description: IC MCU 8BIT 8KB FLASH 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 240 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus-UART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Number of I/O: 17
DigiKey Programmable: Not Verified
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AUIRFS8403 AUIRFS8403 Infineon Technologies IRSDS18668-1.pdf?t.download=true&u=5oefqw Description: AUIRFS8403 - 20V-40V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
160+134.77 грн
Мінімальне замовлення: 160
В кошику  од. на суму  грн.
AUIRFS3806 AUIRFS3806 Infineon Technologies auirfs3806.pdf?fileId=5546d462533600a4015355b6a15914c1 Description: MOSFET N-CH 60V 43A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Qualification: AEC-Q101
на замовлення 676 шт:
термін постачання 21-31 дні (днів)
322+74.06 грн
Мінімальне замовлення: 322
В кошику  од. на суму  грн.
AUIRFS3806 AUIRFS3806 Infineon Technologies auirfs3806.pdf?fileId=5546d462533600a4015355b6a15914c1 Description: MOSFET N-CH 60V 43A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Qualification: AEC-Q101
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AUIRFS3607 AUIRFS3607 Infineon Technologies auirfs3607.pdf?fileId=5546d462533600a4015355b6990a14bf Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
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IRGSL4640DPBF IRGSL4640DPBF Infineon Technologies IRGx4640D%28-E%29PbF.pdf Description: IGBT 600V 65A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
109+197.14 грн
Мінімальне замовлення: 109
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IRGSL4062DPBF IRGSL4062DPBF Infineon Technologies IRGS%28SL%294062DPbF.pdf Description: IGBT TRENCH 600V 48A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-262
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
на замовлення 1283 шт:
термін постачання 21-31 дні (днів)
124+171.91 грн
Мінімальне замовлення: 124
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IRGS8B60KPBF IRGS8B60KPBF Infineon Technologies IRSDS11814-1.pdf?t.download=true&u=5oefqw Description: IGBT
Packaging: Bulk
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
353+62.90 грн
Мінімальне замовлення: 353
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IRGS8B60KPBF IRGS8B60KPBF Infineon Technologies IRG%28B%2CS%2CSL%298B60KPbF.pdf Description: IGBT 600V 28A 167W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/140ns
Switching Energy: 160µJ (on), 160µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 29 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 34 A
Power - Max: 167 W
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IRGSL30B60KPBF IRGSL30B60KPBF Infineon Technologies irgs30b60kpbf.pdf?fileId=5546d462533600a40153565aa8cd24ba Description: IGBT 600V 78A 370W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/185ns
Switching Energy: 350µJ (on), 825µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 102 nC
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 370 W
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IPT60T040S7XTMA1 IPT60T040S7XTMA1 Infineon Technologies Infineon-IPT60T040S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c4745b27ae8 Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tj)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 780µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 300 V
на замовлення 2198 шт:
термін постачання 21-31 дні (днів)
1+525.40 грн
10+358.07 грн
100+268.36 грн
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AIMZH120R030M1TXKSA1 AIMZH120R030M1TXKSA1 Infineon Technologies Infineon-AIMZH120R030M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68ea0e964a7f Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
1+1373.67 грн
30+826.74 грн
120+734.73 грн
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AIMZH120R160M1TXKSA1 AIMZH120R160M1TXKSA1 Infineon Technologies Infineon-AIMZH120R160M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68ea2dbe4a8b Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Qualification: AEC-Q101
на замовлення 57 шт:
термін постачання 21-31 дні (днів)
1+661.52 грн
30+373.63 грн
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AIMZH120R120M1TXKSA1 AIMZH120R120M1TXKSA1 Infineon Technologies Infineon-AIMZH120R120M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68ea273e4a88 Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
1+623.34 грн
30+350.93 грн
120+296.28 грн
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AIMZH120R080M1TXKSA1 AIMZH120R080M1TXKSA1 Infineon Technologies Infineon-AIMZH120R080M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68ea1db44a85 Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+807.60 грн
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CYDMX256A16-90BVXI CYDMX256A16-90BVXI Infineon Technologies download Description: IC SRAM 256KBIT PAR 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.3V
Technology: SRAM - Dual Port, MoBL
Memory Format: SRAM
Supplier Device Package: 100-VFBGA (6x6)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16K x 16
DigiKey Programmable: Not Verified
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IFCM10P60GDXKMA1 IFCM10P60GDXKMA1 Infineon Technologies Infineon-IFCM10P60GD-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c53b94e897ce6 Description: IFPS MODULES
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
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CYAT817AZS88-52002 CYAT817AZS88-52002 Infineon Technologies Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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TC356TH64F300SABKXUMA2 Infineon Technologies Description: IC MCU
Packaging: Tape & Reel (TR)
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TC357TA64F300SABKXUMA2 Infineon Technologies Infineon-TC35x_AB-step_DataSheet-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c82ce566401833cdf8d5f2dc7 Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 1.44M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 16x12b SAR, Sigma-Delta
Core Size: 32-Bit 5-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-13
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TT162N14KOFHPSA1 TT162N14KOFHPSA1 Infineon Technologies Infineon-TT162N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42f789a4bb5 Description: SCR MODULE 1.4KV 260A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.4 kV
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DT142N12KOFHPSA1 DT142N12KOFHPSA1 Infineon Technologies TT142N.pdf Description: SCR MODULE 1.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 142 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.2 kV
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
3+8332.24 грн
Мінімальне замовлення: 3
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DT142N12KOFHPSA1 DT142N12KOFHPSA1 Infineon Technologies TT142N.pdf Description: SCR MODULE 1.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 142 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.2 kV
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TT142N12KOFHPSA1 Infineon Technologies TT142N.pdf Description: SCR MODULE 1.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 142 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.2 kV
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DD171N16KHPSA1 DD171N16KHPSA1 Infineon Technologies Infineon-DD171N-DS-v03_01-EN.pdf?fileId=db3a304412b407950112b42fbb0e4d48 Description: DIODE MODULE GP 1.6KV 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 171A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
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TD180N16KOFHPSA1 TD180N16KOFHPSA1 Infineon Technologies Infineon-TT180N-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42f7ea04bea Description: THYRISTOR MODULE 1600V 180A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 285 A
Voltage - Off State: 1.6 kV
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S25FL164K0XMFV013 S25FL164K0XMFV013 Infineon Technologies S25FL116K_132K_164K__RevH_5-19-17.pdf Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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DD171N12KHPSA1 DD171N12KHPSA1 Infineon Technologies Infineon-DD171N-DS-v03_01-EN.pdf?fileId=db3a304412b407950112b42fbb0e4d48 Description: DIODE MODULE GP 1.2KV 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 171A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
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IM06B15AC1XKMA1 IM06B15AC1XKMA1 Infineon Technologies IM06B15AC1%20final%20datasheet_20240816.pdf Description: IGBT IPM 650V 15A 24-PWRDIP MOD
Packaging: Tray
Package / Case: 24-PowerDIP Module (1.126", 28.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 650 V
на замовлення 195 шт:
термін постачання 21-31 дні (днів)
1+886.46 грн
14+567.08 грн
112+442.60 грн
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CG10188AA Infineon Technologies Description: IC MEMORY
Packaging: Bulk
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SAL-TC299TP-128F300N BC SAL-TC299TP-128F300N BC Infineon Technologies Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 768K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 263
DigiKey Programmable: Not Verified
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SAK-TC297TX-128F300N BC SAK-TC297TX-128F300N BC Infineon Technologies Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 2.7M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 768K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 263
DigiKey Programmable: Not Verified
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IMZA75R027M1HXKSA1 IMZA75R027M1HXKSA1 Infineon Technologies Infineon-IMZA75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6e380390f17 Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
на замовлення 234 шт:
термін постачання 21-31 дні (днів)
1+1103.92 грн
30+652.34 грн
120+623.83 грн
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CYAT817AZS77-42002 CYAT817AZS77-42002 Infineon Technologies Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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CYAT817AZS77-5A002 CYAT817AZS77-5A002 Infineon Technologies Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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CYAT817AZS77-5A202 CYAT817AZS77-5A202 Infineon Technologies Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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CYAT817AZS77-520DA CYAT817AZS77-520DA Infineon Technologies Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
CYAT817AZS77-5BFBA CYAT817AZS77-5BFBA Infineon Technologies Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
CYAT847AZS77-42002 CYAT847AZS77-42002 Infineon Technologies Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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S25FL256LAGMFI000 Infineon-S25FL256L_S25FL128L_256-MB_(32-MB)_128-MB_(16-MB)_3.0_V_FL-L_FLASH_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed40e335224
S25FL256LAGMFI000
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 896 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+327.03 грн
10+279.51 грн
25+266.54 грн
40+244.12 грн
80+235.51 грн
240+222.44 грн
480+211.05 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XMC4104Q48F128ABXUMA1 Infineon-XMC4100_XMC4200_DS-DS-v01_04-EN.pdf?fileId=5546d462696dbf120169817056f938ff
XMC4104Q48F128ABXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 20K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 9x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 3.13V ~ 3.63V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART, USB
Peripherals: DMA, I2S, LED, POR, PWM, WDT
Supplier Device Package: PG-VQFN-48-53
Number of I/O: 21
DigiKey Programmable: Not Verified
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TLE4943CXAMA1 Infineon-TLE4943C-DataSheet-v01_00-EN.pdf?fileId=5546d4626c1f3dc3016c484bd04016f6
Виробник: Infineon Technologies
Description: MAG SWITCH SPECIAL PURP SPEED
Packaging: Tape & Box (TB)
Function: Special Purpose
Technology: Hall Effect
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IPB70P04P409ATMA1 Infineon-IPP_B_I70P04P4_09-DS-v01_03-en.pdf?fileId=db3a30432f69f146012f782d29312e0f
IPB70P04P409ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 72A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Qualification: AEC-Q101
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IPB70P04P409ATMA2 Infineon-IPP_B_I70P04P4_09-DS-v01_03-en.pdf?fileId=db3a30432f69f146012f782d29312e0f
IPB70P04P409ATMA2
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V) PG-TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 70A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4V @ 120µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
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SP49T0512XTMA1 Infineon-SP49T-05-12-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c901008d10190124b254d035f
SP49T0512XTMA1
Виробник: Infineon Technologies
Description: TPMS
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: I2C
Mounting Type: Surface Mount
Output: 32 b
Operating Pressure: 14.5PSI ~ 232.06PSI (100kPa ~ 1600kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Industrial Automation
Supplier Device Package: PG-DSOSP-14-84
Port Style: No Port
Maximum Pressure: 362.59PSI (2500kPa)
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLD5098EPB2GEVALKITTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLD5098EP
Features: Dimmable
Packaging: Bulk
Voltage - Output: 30V ~ 54V
Voltage - Input: 8V ~ 27V
Contents: Board(s)
Current - Output / Channel: 350mA
Utilized IC / Part: TLD5098EP
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
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TLD5098EPB2BEVALKITTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLD5098EP
Features: Dimmable
Packaging: Bulk
Voltage - Output: 16V ~ 23V
Voltage - Input: 8V ~ 27V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: TLD5098EP
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
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TLD5098EPSEPICEVALTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLD5098EP
Features: Dimmable
Packaging: Bulk
Voltage - Output: 6V ~ 23V
Voltage - Input: 8V ~ 27V
Contents: Board(s)
Current - Output / Channel: 1A
Utilized IC / Part: TLD5098EP
Supplied Contents: Board(s)
Outputs and Type: 1 Non-Isolated Output
товару немає в наявності
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CY7C1518AV18-250BZC CY7C1518%2C20AV18.pdf
CY7C1518AV18-250BZC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1518KV18-250BZI Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611
CY7C1518KV18-250BZI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Bulk
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
на замовлення 64 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+9169.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY7C1518KV18-250BZI Infineon-CY7C1518KV18_CY7C1520KV18_72-Mbit_DDR_II_SRAM_Two-Word_Burst_Architecture-DataSheet-v23_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec156903611
CY7C1518KV18-250BZI
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 250 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1518V18-200BZC CY7C15%2816%2C18%2C20%2C27%29V18_8.pdf
CY7C1518V18-200BZC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 200 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (15x17)
Memory Interface: Parallel
Memory Organization: 4M x 18
DigiKey Programmable: Not Verified
на замовлення 98 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+11972.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRF9952QTR AUIRF9952Q.pdf
AUIRF9952QTR
Виробник: Infineon Technologies
Description: MOSFET N/P-CH 30V 3.5A/2.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
товару немає в наявності
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CY7C199C-15ZC CY7C199C%20RevC.pdf
CY7C199C-15ZC
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 28TSOP I
Packaging: Bag
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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TLS820F3ELV33XUMA1 Infineon-TLS820F3ELV33-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c8929aa4d0189dafdc6263c11
TLS820F3ELV33XUMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR OPTIREG
Packaging: Cut Tape (CT)
на замовлення 2489 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+139.44 грн
10+95.11 грн
25+85.33 грн
100+70.01 грн
250+65.20 грн
500+62.30 грн
1000+58.93 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CYPD3172P-24LQXQT Infineon-CCG3PA-NFET_Overview-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017e90803aca0b63&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYPD3172P-24LQXQT
Виробник: Infineon Technologies
Description: EZ-PD CCG3PA-NFET
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
RAM Size: 4K x 8
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 6
DigiKey Programmable: Not Verified
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+133.63 грн
10+94.31 грн
25+85.87 грн
100+71.83 грн
250+67.66 грн
500+65.14 грн
1000+62.04 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CYPD3173P-24LQXQT Infineon-CCG3PA-NFET_Overview-ProductBrief-v01_00-EN.pdf?fileId=8ac78c8c7e7124d1017e90803aca0b63&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CYPD3173P-24LQXQT
Виробник: Infineon Technologies
Description: EZ-PD CCG3PA-NFET
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: PWM
RAM Size: 4K x 8
Controller Series: CYPD3x
Program Memory Type: FLASH (64kB)
Applications: Power Adaptor
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 6
DigiKey Programmable: Not Verified
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+134.46 грн
10+94.87 грн
25+86.32 грн
100+72.21 грн
250+68.02 грн
500+65.49 грн
1000+62.37 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
FS150R12KT4PB11BPSA1 Infineon-FS150R12KT4-DS-v02_01-en_jp.pdf?fileId=db3a30433df41259013df438b6d4004c
FS150R12KT4PB11BPSA1
Виробник: Infineon Technologies
Description: MOD IGBT LOW PWR ECONO3-4
Packaging: Tray
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8486.90 грн
В кошику  од. на суму  грн.
CYT4DNJBRCQ1BZSGST
CYT4DNJBRCQ1BZSGST
Виробник: Infineon Technologies
Description: IC MCU 32BIT 6.188MB FLSH 327BGA
Packaging: Tape & Reel (TR)
Package / Case: 327-BGA
Mounting Type: Surface Mount
Speed: 320MHz
Program Memory Size: 6.188MB (6.188M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-BGA
Number of I/O: 168
DigiKey Programmable: Not Verified
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
700+2602.87 грн
Мінімальне замовлення: 700
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CYT4DNJBRCQ1BZSGST
CYT4DNJBRCQ1BZSGST
Виробник: Infineon Technologies
Description: IC MCU 32BIT 6.188MB FLSH 327BGA
Packaging: Cut Tape (CT)
Package / Case: 327-BGA
Mounting Type: Surface Mount
Speed: 320MHz
Program Memory Size: 6.188MB (6.188M x 8)
RAM Size: 640K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Quad-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 327-BGA
Number of I/O: 168
DigiKey Programmable: Not Verified
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4052.96 грн
10+3113.17 грн
25+2915.65 грн
100+2532.51 грн
250+2435.35 грн
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CY95F562KNPFT-G-UNE2
CY95F562KNPFT-G-UNE2
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 20TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 240 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: F²MC-8FX
Data Converters: A/D 6x8/10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
Connectivity: LINbus-UART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 20-TSSOP
Number of I/O: 17
DigiKey Programmable: Not Verified
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AUIRFS8403 IRSDS18668-1.pdf?t.download=true&u=5oefqw
AUIRFS8403
Виробник: Infineon Technologies
Description: AUIRFS8403 - 20V-40V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 123A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 70A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3183 pF @ 25 V
Qualification: AEC-Q101
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
160+134.77 грн
Мінімальне замовлення: 160
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AUIRFS3806 auirfs3806.pdf?fileId=5546d462533600a4015355b6a15914c1
AUIRFS3806
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 43A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Qualification: AEC-Q101
на замовлення 676 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
322+74.06 грн
Мінімальне замовлення: 322
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AUIRFS3806 auirfs3806.pdf?fileId=5546d462533600a4015355b6a15914c1
AUIRFS3806
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 43A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 15.8mOhm @ 25A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 50 V
Qualification: AEC-Q101
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AUIRFS3607 auirfs3607.pdf?fileId=5546d462533600a4015355b6990a14bf
AUIRFS3607
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 46A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3070 pF @ 50 V
товару немає в наявності
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IRGSL4640DPBF IRGx4640D%28-E%29PbF.pdf
IRGSL4640DPBF
Виробник: Infineon Technologies
Description: IGBT 600V 65A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
Supplier Device Package: TO-262
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
109+197.14 грн
Мінімальне замовлення: 109
В кошику  од. на суму  грн.
IRGSL4062DPBF IRGS%28SL%294062DPbF.pdf
IRGSL4062DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 48A TO-262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-262
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 250 W
на замовлення 1283 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
124+171.91 грн
Мінімальне замовлення: 124
В кошику  од. на суму  грн.
IRGS8B60KPBF IRSDS11814-1.pdf?t.download=true&u=5oefqw
IRGS8B60KPBF
Виробник: Infineon Technologies
Description: IGBT
Packaging: Bulk
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
353+62.90 грн
Мінімальне замовлення: 353
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IRGS8B60KPBF IRG%28B%2CS%2CSL%298B60KPbF.pdf
IRGS8B60KPBF
Виробник: Infineon Technologies
Description: IGBT 600V 28A 167W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 8A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/140ns
Switching Energy: 160µJ (on), 160µJ (off)
Test Condition: 400V, 8A, 50Ohm, 15V
Gate Charge: 29 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 34 A
Power - Max: 167 W
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IRGSL30B60KPBF irgs30b60kpbf.pdf?fileId=5546d462533600a40153565aa8cd24ba
IRGSL30B60KPBF
Виробник: Infineon Technologies
Description: IGBT 600V 78A 370W TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 46ns/185ns
Switching Energy: 350µJ (on), 825µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 102 nC
Current - Collector (Ic) (Max): 78 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 370 W
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IPT60T040S7XTMA1 Infineon-IPT60T040S7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c8afe5bd0018b4c4745b27ae8
IPT60T040S7XTMA1
Виробник: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tj)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 780µA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 300 V
на замовлення 2198 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+525.40 грн
10+358.07 грн
100+268.36 грн
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AIMZH120R030M1TXKSA1 Infineon-AIMZH120R030M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68ea0e964a7f
AIMZH120R030M1TXKSA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 27A, 20V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1738 pF @ 800 V
Qualification: AEC-Q101
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1373.67 грн
30+826.74 грн
120+734.73 грн
В кошику  од. на суму  грн.
AIMZH120R160M1TXKSA1 Infineon-AIMZH120R160M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68ea2dbe4a8b
AIMZH120R160M1TXKSA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 5A, 20V
Power Dissipation (Max): 109W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 1.5mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 800 V
Qualification: AEC-Q101
на замовлення 57 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+661.52 грн
30+373.63 грн
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AIMZH120R120M1TXKSA1 Infineon-AIMZH120R120M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68ea273e4a88
AIMZH120R120M1TXKSA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 7A, 20V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 2.2mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 800 V
Qualification: AEC-Q101
на замовлення 210 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+623.34 грн
30+350.93 грн
120+296.28 грн
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AIMZH120R080M1TXKSA1 Infineon-AIMZH120R080M1T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c68ea1db44a85
AIMZH120R080M1TXKSA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 169W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-TO247-4-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+807.60 грн
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CYDMX256A16-90BVXI download
CYDMX256A16-90BVXI
Виробник: Infineon Technologies
Description: IC SRAM 256KBIT PAR 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 3.3V
Technology: SRAM - Dual Port, MoBL
Memory Format: SRAM
Supplier Device Package: 100-VFBGA (6x6)
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16K x 16
DigiKey Programmable: Not Verified
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IFCM10P60GDXKMA1 Infineon-IFCM10P60GD-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c53b94e897ce6
IFCM10P60GDXKMA1
Виробник: Infineon Technologies
Description: IFPS MODULES
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
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CYAT817AZS88-52002 Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4
CYAT817AZS88-52002
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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TC356TH64F300SABKXUMA2
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Tape & Reel (TR)
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TC357TA64F300SABKXUMA2 Infineon-TC35x_AB-step_DataSheet-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c82ce566401833cdf8d5f2dc7
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 1.44M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 16x12b SAR, Sigma-Delta
Core Size: 32-Bit 5-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-13
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TT162N14KOFHPSA1 Infineon-TT162N-DS-v01_00-en_de.pdf?fileId=db3a304412b407950112b42f789a4bb5
TT162N14KOFHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.4KV 260A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 162 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.4 kV
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DT142N12KOFHPSA1 TT142N.pdf
DT142N12KOFHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 142 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.2 kV
на замовлення 16 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+8332.24 грн
Мінімальне замовлення: 3
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DT142N12KOFHPSA1 TT142N.pdf
DT142N12KOFHPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 142 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.2 kV
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TT142N12KOFHPSA1 TT142N.pdf
Виробник: Infineon Technologies
Description: SCR MODULE 1.2KV MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Series Connection - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 4800A @ 50Hz
Number of SCRs, Diodes: 2 SCRs
Current - On State (It (AV)) (Max): 142 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Voltage - Off State: 1.2 kV
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DD171N16KHPSA1 Infineon-DD171N-DS-v03_01-EN.pdf?fileId=db3a304412b407950112b42fbb0e4d48
DD171N16KHPSA1
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1.6KV 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 171A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
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TD180N16KOFHPSA1 Infineon-TT180N-DS-v02_00-en_de.pdf?fileId=db3a304412b407950112b42f7ea04bea
TD180N16KOFHPSA1
Виробник: Infineon Technologies
Description: THYRISTOR MODULE 1600V 180A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: 130°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 285 A
Voltage - Off State: 1.6 kV
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S25FL164K0XMFV013 S25FL116K_132K_164K__RevH_5-19-17.pdf
S25FL164K0XMFV013
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 108 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 3ms
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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DD171N12KHPSA1 Infineon-DD171N-DS-v03_01-EN.pdf?fileId=db3a304412b407950112b42fbb0e4d48
DD171N12KHPSA1
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1.2KV 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 171A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
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IM06B15AC1XKMA1 IM06B15AC1%20final%20datasheet_20240816.pdf
IM06B15AC1XKMA1
Виробник: Infineon Technologies
Description: IGBT IPM 650V 15A 24-PWRDIP MOD
Packaging: Tray
Package / Case: 24-PowerDIP Module (1.126", 28.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 15 A
Voltage: 650 V
на замовлення 195 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+886.46 грн
14+567.08 грн
112+442.60 грн
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CG10188AA
Виробник: Infineon Technologies
Description: IC MEMORY
Packaging: Bulk
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SAL-TC299TP-128F300N BC Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
SAL-TC299TP-128F300N BC
Виробник: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 150°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 768K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 263
DigiKey Programmable: Not Verified
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SAK-TC297TX-128F300N BC Infineon-TC29xBC-DataSheet-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
SAK-TC297TX-128F300N BC
Виробник: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 2.7M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 768K x 8
Core Processor: TriCore™
Data Converters: A/D 94x12b SAR, Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 263
DigiKey Programmable: Not Verified
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IMZA75R027M1HXKSA1 Infineon-IMZA75R027M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6e380390f17
IMZA75R027M1HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 25mOhm @ 24.5A, 20V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 8.8mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1668 pF @ 500 V
на замовлення 234 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1103.92 грн
30+652.34 грн
120+623.83 грн
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CYAT817AZS77-42002 Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4
CYAT817AZS77-42002
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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CYAT817AZS77-5A002 Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4
CYAT817AZS77-5A002
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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CYAT817AZS77-5A202 Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4
CYAT817AZS77-5A202
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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CYAT817AZS77-520DA Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4
CYAT817AZS77-520DA
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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CYAT817AZS77-5BFBA Infineon-CYAT817X_PSoC_Automotive_Multitouch_Generation_7XL-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f018395a226012cc4
CYAT817AZS77-5BFBA
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C, SPI
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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CYAT847AZS77-42002 Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5
CYAT847AZS77-42002
Виробник: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
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