Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (123056) > Сторінка 734 з 2051
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
CY62187EV30LL-55BAXIT | Infineon Technologies |
Description: IC SRAM 64MBIT PARALLEL 48FBGADigiKey Programmable: Not Verified Memory Organization: 4M x 16 Access Time: 55 ns Memory Interface: Parallel Write Cycle Time - Word, Page: 55ns Supplier Device Package: 48-FBGA (8x9.5) Memory Format: SRAM Technology: SRAM - Asynchronous Voltage - Supply: 2.2V ~ 3.7V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 64Mbit Mounting Type: Surface Mount Package / Case: 48-LFBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
SPD30N08S2-22 | Infineon Technologies |
Description: MOSFET N-CH 75V 30A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-TO252-3-11 Vgs(th) (Max) @ Id: 4V @ 80µA Power Dissipation (Max): 136W (Tc) Rds On (Max) @ Id, Vgs: 21.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk |
на замовлення 1134 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IMT65R022M1HXUMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Technology: SiCFET (Silicon Carbide) Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 18V Drain to Source Voltage (Vdss): 650 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
IMT65R022M1HXUMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Technology: SiCFET (Silicon Carbide) Supplier Device Package: PG-HSOF-8-2 Drive Voltage (Max Rds On, Min Rds On): 18V Drain to Source Voltage (Vdss): 650 V |
на замовлення 600 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CY8C4127AZE-S445T | Infineon Technologies |
Description: IC MCU 32BIT 128KB FLASH 64TQFPPackaging: Tape & Reel (TR) Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x10b, 20x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Number of I/O: 54 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||||
| STRVS280X02F | Infineon Technologies |
Description: SPDPackaging: Bulk |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
|
IQD063N15NM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS POWER MOSFETS 25 V - 150Packaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc) Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 159µA Supplier Device Package: PG-WHTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
|
IQD063N15NM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS POWER MOSFETS 25 V - 150Packaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc) Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 159µA Supplier Device Package: PG-WHTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V |
на замовлення 4990 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IQD063N15NM5SCATMA1 | Infineon Technologies |
Description: OPTIMOS POWER MOSFETS 25 V - 150Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc) Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 159µA Supplier Device Package: PG-WHSON-8-U02 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
|
IQD063N15NM5SCATMA1 | Infineon Technologies |
Description: OPTIMOS POWER MOSFETS 25 V - 150Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc) Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 159µA Supplier Device Package: PG-WHSON-8-U02 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V |
на замовлення 4975 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IFF600B12ME4B11BOSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 600A AG-ECONOD-5Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A NTC Thermistor: Yes Supplier Device Package: AG-ECONOD-5 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 3 mA |
на замовлення 2313 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IPD030N03LF2SATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 160A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 3.05mOhm @ 60A, 10V Power Dissipation (Max): 3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 40µA Supplier Device Package: PG-TO252-3-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
IPD030N03LF2SATMA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 160A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 3.05mOhm @ 60A, 10V Power Dissipation (Max): 3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 40µA Supplier Device Package: PG-TO252-3-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V |
на замовлення 1869 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| FZ1600R17KF6CB2NOSA1 | Infineon Technologies |
Description: FZ1600R17KF6C_B2 - 1700V IGBT MOPackaging: Bulk |
на замовлення 42 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||||||
|
BAS70B5003 | Infineon Technologies |
Description: DIODE SCHOTTKY 70V 70MA SOT23-3Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Voltage - DC Reverse (Vr) (Max): 70 V Grade: Automotive Operating Temperature - Junction: 150°C Supplier Device Package: PG-SOT23-3-3 Current - Average Rectified (Io): 70mA Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
на замовлення 26925 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
DEMOBOARDITS4075QTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR ITS4075QPackaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Contents: Board(s) Utilized IC / Part: ITS4075Q |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
| S99WS128P0010 | Infineon Technologies |
Description: IC FLASH DigiKey Programmable: Not Verified Memory Format: FLASH Technology: FLASH - NOR Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 680 шт В кошику од. на суму грн. | |||||||||||||||||
|
AIMCQ120R020M1TXTMA1 | Infineon Technologies |
Description: SIC_DISCRETEPackaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V Power Dissipation (Max): 577W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 13.7mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
AIMCQ120R020M1TXTMA1 | Infineon Technologies |
Description: SIC_DISCRETEPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 116A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V Power Dissipation (Max): 577W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 13.7mA Supplier Device Package: PG-HDSOP-22 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V, 20V Vgs (Max): +25V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V Qualification: AEC-Q101 |
на замовлення 1668 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CY2544QC013T | Infineon Technologies |
Description: IC CLOCK GENERATOR 24QFNDigiKey Programmable: Not Verified Number of Circuits: 4 Divider/Multiplier: Yes/No PLL: Yes with Bypass Supplier Device Package: 24-QFN (4x4) Differential - Input:Output: No/No Ratio - Input:Output: 1:9 Voltage - Supply: 2.25V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Input: LVCMOS, Crystal Type: Clock Generator Frequency - Max: 166MHz Output: Clock Mounting Type: Surface Mount Package / Case: 24-UFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
CY2544QC014T | Infineon Technologies |
Description: IC CLOCK GENERATOR 24QFNDigiKey Programmable: Not Verified Number of Circuits: 4 Divider/Multiplier: Yes/No PLL: Yes with Bypass Supplier Device Package: 24-QFN (4x4) Differential - Input:Output: No/No Ratio - Input:Output: 1:9 Voltage - Supply: 2.25V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Input: LVCMOS, Crystal Type: Clock Generator Frequency - Max: 166MHz Output: Clock Mounting Type: Surface Mount Package / Case: 24-UFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
CY2545QC010T | Infineon Technologies |
Description: IC FANOUT DIST 24QFNDigiKey Programmable: Not Verified Number of Circuits: 4 Divider/Multiplier: Yes/No PLL: Yes with Bypass Supplier Device Package: 24-QFN (4x4) Differential - Input:Output: No/No Ratio - Input:Output: 2:8 Voltage - Supply: 2.25V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Input: Clock, Crystal Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator Frequency - Max: 166MHz Output: Clock Mounting Type: Surface Mount Package / Case: 24-UFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
CY2544QC011T | Infineon Technologies |
Description: IC CLOCK GENERATOR 24QFNDigiKey Programmable: Not Verified Number of Circuits: 4 Divider/Multiplier: Yes/No PLL: Yes with Bypass Supplier Device Package: 24-QFN (4x4) Differential - Input:Output: No/No Ratio - Input:Output: 1:9 Voltage - Supply: 2.25V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Input: LVCMOS, Crystal Type: Clock Generator Frequency - Max: 166MHz Output: Clock Mounting Type: Surface Mount Package / Case: 24-UFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
CY2544QC016T | Infineon Technologies |
Description: IC CLOCK GENERATOR 24QFNDigiKey Programmable: Not Verified Number of Circuits: 4 Divider/Multiplier: Yes/No PLL: Yes with Bypass Supplier Device Package: 24-QFN (4x4) Differential - Input:Output: No/No Ratio - Input:Output: 1:9 Voltage - Supply: 2.25V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Input: LVCMOS, Crystal Type: Clock Generator Frequency - Max: 166MHz Output: Clock Mounting Type: Surface Mount Package / Case: 24-UFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
CY2544QC013 | Infineon Technologies |
Description: IC CLOCK GENERATOR 24QFNDigiKey Programmable: Not Verified Number of Circuits: 4 Divider/Multiplier: Yes/No PLL: Yes with Bypass Supplier Device Package: 24-QFN (4x4) Differential - Input:Output: No/No Ratio - Input:Output: 1:9 Voltage - Supply: 2.25V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Input: LVCMOS, Crystal Type: Clock Generator Frequency - Max: 166MHz Output: Clock Mounting Type: Surface Mount Package / Case: 24-UFQFN Exposed Pad Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 490 шт В кошику од. на суму грн. | ||||||||||||||||
|
CY2544QC014 | Infineon Technologies |
Description: IC CLOCK GENERATOR 24QFNDigiKey Programmable: Not Verified Number of Circuits: 4 Divider/Multiplier: Yes/No PLL: Yes with Bypass Supplier Device Package: 24-QFN (4x4) Differential - Input:Output: No/No Ratio - Input:Output: 1:9 Voltage - Supply: 2.25V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Input: LVCMOS, Crystal Type: Clock Generator Frequency - Max: 166MHz Output: Clock Mounting Type: Surface Mount Package / Case: 24-UFQFN Exposed Pad Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 490 шт В кошику од. на суму грн. | ||||||||||||||||
|
CY2545QC010 | Infineon Technologies |
Description: IC FANOUT DIST 24QFNDigiKey Programmable: Not Verified Number of Circuits: 4 Divider/Multiplier: Yes/No PLL: Yes with Bypass Supplier Device Package: 24-QFN (4x4) Differential - Input:Output: No/No Ratio - Input:Output: 2:8 Voltage - Supply: 2.25V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Input: Clock, Crystal Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator Frequency - Max: 166MHz Output: Clock Mounting Type: Surface Mount Package / Case: 24-UFQFN Exposed Pad Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 490 шт В кошику од. на суму грн. | ||||||||||||||||
|
CY2544QC016 | Infineon Technologies |
Description: IC CLOCK GENERATOR 24QFNDigiKey Programmable: Not Verified Number of Circuits: 4 Divider/Multiplier: Yes/No PLL: Yes with Bypass Supplier Device Package: 24-QFN (4x4) Differential - Input:Output: No/No Ratio - Input:Output: 1:9 Voltage - Supply: 2.25V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Input: LVCMOS, Crystal Type: Clock Generator Frequency - Max: 166MHz Output: Clock Mounting Type: Surface Mount Package / Case: 24-UFQFN Exposed Pad Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 490 шт В кошику од. на суму грн. | ||||||||||||||||
|
CYT3DLBBEBQ1BZSGS | Infineon Technologies |
Description: IC MCU 32BIT 4.063MB FLSH 272BGA DigiKey Programmable: Not Verified Number of I/O: 135 Supplier Device Package: 272-BGA (16x16) Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Connectivity: DMA, I2S, LVD, Temp Sensor, WDT Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Dual-Core Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F EEPROM Size: 128K x 8 Program Memory Type: FLASH Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 384K x 8 Program Memory Size: 4.063MB (4.063M x 8) Speed: 240MHz Mounting Type: Surface Mount Package / Case: 272-LFBGA Packaging: Tray |
на замовлення 960 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CYT3DLABGBQ1AESGS | Infineon Technologies |
Description: IC MCU 32BT 4.063MB FLSH 216TQFP Packaging: Tray Package / Case: 216-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 240MHz Program Memory Size: 4.063MB (4.063M x 8) RAM Size: 384K x 8 Operating Temperature: -40°C ~ 105°C (TA) Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: DMA, I2S, LVD, Temp Sensor, WDT Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Supplier Device Package: 216-TEQFP (24x24) Number of I/O: 108 DigiKey Programmable: Not Verified |
на замовлення 400 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CYT3DLABABQ1AESGST | Infineon Technologies |
Description: IC MCU 32BT 4.063MB FLSH 216TQFP Packaging: Tape & Reel (TR) Package / Case: 216-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 240MHz Program Memory Size: 4.063MB (4.063M x 8) RAM Size: 384K x 8 Operating Temperature: -40°C ~ 105°C (TA) Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: DMA, I2S, LVD, Temp Sensor, WDT Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Supplier Device Package: 216-TEQFP (24x24) Number of I/O: 108 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||||||
|
CYT3DLABGBQ1AESGST | Infineon Technologies |
Description: IC MCU 32BT 4.063MB FLSH 216TQFP Packaging: Tape & Reel (TR) Package / Case: 216-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 240MHz Program Memory Size: 4.063MB (4.063M x 8) RAM Size: 384K x 8 Operating Temperature: -40°C ~ 105°C (TA) Program Memory Type: FLASH EEPROM Size: 128K x 8 Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: DMA, I2S, LVD, Temp Sensor, WDT Peripherals: DMA, I2S, LVD, Temp Sensor, WDT Supplier Device Package: 216-TEQFP (24x24) Number of I/O: 108 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||||||
|
CY8C27243-24SXI | Infineon Technologies |
Description: IC MCU 8BIT 16KB FLASH 20SOICPackaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 16KB (16K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 4x14b; D/A 4x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 20-SOIC Number of I/O: 16 DigiKey Programmable: Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IPD040N03LF2SATMA1 | Infineon Technologies |
Description: IPD040N03LF2SATMA1Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Power Dissipation (Max): 3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc) Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V Supplier Device Package: PG-TO252-3-34 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
IPD040N03LF2SATMA1 | Infineon Technologies |
Description: IPD040N03LF2SATMA1Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc) Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V Power Dissipation (Max): 3W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TO252-3-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V |
на замовлення 1846 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
S25FL128LAGNFI013 | Infineon Technologies |
Description: IC FLASH 128MBIT SPI/QUAD 8WSONPackaging: Tape & Reel (TR) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
S25FL128LAGNFI013 | Infineon Technologies |
Description: IC FLASH 128MBIT SPI/QUAD 8WSONPackaging: Cut Tape (CT) Package / Case: 8-WDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-WSON (5x6) Memory Interface: SPI - Quad I/O, QPI Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IMZA65R040M2HXKSA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V Power Dissipation (Max): 172W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 4.6mA Supplier Device Package: PG-TO247-4-8 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V |
на замовлення 1261 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
FF2600UXTR33T2M1BPSA1 | Infineon Technologies |
Description: MOSFET 2N-CH 3300V AG-XHP2K33Supplier Device Package: AG-XHP2K33 Vgs(th) (Max) @ Id: 5.55V @ 675mA Gate Charge (Qg) (Max) @ Vgs: 3750nC @ 15V Rds On (Max) @ Id, Vgs: 3.1mOhm @ 750A, 15V Input Capacitance (Ciss) (Max) @ Vds: 152000pF @ 1.8kV Current - Continuous Drain (Id) @ 25°C: 720A (Tc) Drain to Source Voltage (Vdss): 3300V (3.3kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
F3L200R07W2S5PB95BPSA1 | Infineon Technologies |
Description: F3L200R07W2S5PB95BPSA1Input Capacitance (Cies) @ Vce: 14300 pF @ 25 V Current - Collector Cutoff (Max): 45 µA Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 200 A IGBT Type: Trench Field Stop NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 150A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Level Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
на замовлення 15 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
FF4000UXTR33T2M1BPSA1 | Infineon Technologies |
Description: MOSFET 2 N-CH 3300V XHP2K17Supplier Device Package: AG-XHP2K17 Vgs(th) (Max) @ Id: 5.55V @ 450mA Gate Charge (Qg) (Max) @ Vgs: 2500nC @ 15V Rds On (Max) @ Id, Vgs: 4.8mOhm @ 500A, 15V Input Capacitance (Ciss) (Max) @ Vds: 101000pF @ 1800V Current - Continuous Drain (Id) @ 25°C: 500A (Tc) Drain to Source Voltage (Vdss): 3300V (3.3kV) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
TLE98442QXXUMA2 | Infineon Technologies |
Description: EMBEDDED_POWERPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: LIN, SPI, SSC, UART RAM Size: 4K x 8 Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 3V ~ 28V Program Memory Type: FLASH (64kB) Core Processor: ARM® Cortex®-M0 Supplier Device Package: PG-VQFN-48-79 Grade: Automotive Number of I/O: 10 Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
|
IRG4BC30FD1PBF | Infineon Technologies |
Description: IGBT 600V 31A TO-220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 46 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 22ns/250ns Switching Energy: 370µJ (on), 1.42mJ (off) Test Condition: 480V, 17A, 23Ohm, 15V Gate Charge: 57 nC Current - Collector (Ic) (Max): 31 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 124 A Power - Max: 100 W |
на замовлення 185 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IRG4BC30FD1PBF | Infineon Technologies |
Description: IGBT 600V 31A TO-220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 46 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 22ns/250ns Switching Energy: 370µJ (on), 1.42mJ (off) Test Condition: 480V, 17A, 23Ohm, 15V Gate Charge: 57 nC Current - Collector (Ic) (Max): 31 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 124 A Power - Max: 100 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
CYW43022CUBT | Infineon Technologies |
Description: WI-FI COMBO IOTPackaging: Tape & Reel (TR) Package / Case: 106-UFBGA, WLBGA Mounting Type: Surface Mount Frequency: 2.4GHz ~ 5GHz Memory Size: 1.125MB ROM, 388kB SRAM Type: TxRx + MCU Operating Temperature: -20°C ~ 70°C Voltage - Supply: 3.2V ~ 4.6V Power - Output: 20dBm Protocol: Bluetooth v5.4 Data Rate (Max): 3Mbps Supplier Device Package: SG-XFWLB-106 GPIO: 40 RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2C, SDIO, SPI, UART |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
|
CYW43022CUBT | Infineon Technologies |
Description: WI-FI COMBO IOTPackaging: Cut Tape (CT) Package / Case: 106-UFBGA, WLBGA Mounting Type: Surface Mount Frequency: 2.4GHz ~ 5GHz Memory Size: 1.125MB ROM, 388kB SRAM Type: TxRx + MCU Operating Temperature: -20°C ~ 70°C Voltage - Supply: 3.2V ~ 4.6V Power - Output: 20dBm Protocol: Bluetooth v5.4 Data Rate (Max): 3Mbps Supplier Device Package: SG-XFWLB-106 GPIO: 40 RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2C, SDIO, SPI, UART |
на замовлення 4994 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
ICE5QR1070AZXKLA1 | Infineon Technologies |
Description: AC-DC INTEGRATED POWER STAGE - CPackaging: Bulk |
на замовлення 1956 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CY90911ASPMC-GS-106E1 | Infineon Technologies |
Description: IC MCU 16BIT 64KB MROM 48LQFPPackaging: Tray Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 32MHz Program Memory Size: 64KB (64K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External Program Memory Type: Mask ROM Core Processor: F²MC-16LX Data Converters: A/D 16x8/10b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, LINbus, UART/USART Peripherals: POR, WDT Supplier Device Package: 48-LQFP (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
|
IGLT65R110D2ATMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 15A 16SOPPackaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 4A Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1.3mA Supplier Device Package: PG-HDSOP-16-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V |
товару немає в наявності |
Мінімальне замовлення: 1800 шт В кошику од. на суму грн. | ||||||||||||||||
|
|
IGLT65R110D2ATMA1 | Infineon Technologies |
Description: GANFET N-CH 650V 15A 16SOPPackaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 4A Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1.3mA Supplier Device Package: PG-HDSOP-16-8 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V |
на замовлення 734 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
IQDH29NE2LM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS POWER MOSFETS 25 V - 150Packaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc) Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.448mA Supplier Device Package: PG-WHTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
|
IQDH29NE2LM5CGSCATMA1 | Infineon Technologies |
Description: OPTIMOS POWER MOSFETS 25 V - 150Packaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc) Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 278W (Tc) Vgs(th) (Max) @ Id: 2V @ 1.448mA Supplier Device Package: PG-WHTFN-9-U02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
IPB100N08S207ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 75V 100A TO263-3Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 7012 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
CY8C4248LQI-BL543T | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 56QFN Number of I/O: 36 Supplier Device Package: 56-QFN (7x7) Peripherals: Bluetooth, Brown-out Detect/Reset, DMA, LVD, POR, PWM, SmartCard, SmartSense, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 8x12b SAR; D/A 2x7b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 32K x 8 Program Memory Size: 256KB (256K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 56-UFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
|
CY8C4248LQI-BL573T | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 56QFNPackaging: Cut Tape (CT) Package / Case: 56-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR; D/A 2xIDAC Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Bluetooth, Brown-out Detect/Reset, DMA LVD, POR, PWM, SmartCard, SmartSense, WDT Supplier Device Package: 56-QFN (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
CY8C4248BZI-L479 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLSH 124VFBGADigiKey Programmable: Not Verified Number of I/O: 98 Supplier Device Package: 124-VFBGA (9x9) Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x12b; D/A 2x7b, 2x8b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 32K x 8 Program Memory Size: 256KB (256K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 124-VFBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 520 шт В кошику од. на суму грн. | ||||||||||||||||
|
CY8C4248BZA-L489 | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 124VFBGQualification: AEC-Q100 Number of I/O: 98 Grade: Automotive Supplier Device Package: 124-VFBGA (9x9) Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x12b SAR; D/A 4x7/8b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 32K x 8 Program Memory Size: 256KB (256K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 124-VFBGA Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. | ||||||||||||||||
| CY8C4248FNQ-BL583T | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 76WLCSP Number of I/O: 36 Supplier Device Package: 76-WLCSP (4.04x3.87) Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 8x12b SAR; D/A 2x7b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 32K x 8 Program Memory Size: 256KB (256K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 76-UFBGA, WLCSP Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CY8C4248FNI-BL593T | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 76WLCSPDigiKey Programmable: Not Verified Number of I/O: 36 Supplier Device Package: 76-WLCSP (4.04x3.87) Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 16x12b; D/A 1x7b, 1x8b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 32K x 8 Program Memory Size: 256KB (256K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 76-UFBGA, WLCSP Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
CY8C4248BZS-L489T | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 124VFBGQualification: AEC-Q100 Number of I/O: 98 Grade: Automotive Supplier Device Package: 124-VFBGA (9x9) Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Core Size: 32-Bit Data Converters: A/D 16x12b SAR; D/A 4x7/8b Core Processor: ARM® Cortex®-M0 Program Memory Type: FLASH Oscillator Type: External, Internal Operating Temperature: -40°C ~ 105°C (TA) RAM Size: 32K x 8 Program Memory Size: 256KB (256K x 8) Speed: 48MHz Mounting Type: Surface Mount Package / Case: 124-VFBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. |
| CY62187EV30LL-55BAXIT |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 64MBIT PARALLEL 48FBGA
DigiKey Programmable: Not Verified
Memory Organization: 4M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 48-FBGA (8x9.5)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.7V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Packaging: Tape & Reel (TR)
Description: IC SRAM 64MBIT PARALLEL 48FBGA
DigiKey Programmable: Not Verified
Memory Organization: 4M x 16
Access Time: 55 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 55ns
Supplier Device Package: 48-FBGA (8x9.5)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.7V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 64Mbit
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| SPD30N08S2-22 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 30A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 80µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Description: MOSFET N-CH 75V 30A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 4V @ 80µA
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 21.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
на замовлення 1134 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 373+ | 53.54 грн |
| IMT65R022M1HXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IMT65R022M1HXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Technology: SiCFET (Silicon Carbide)
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 18V
Drain to Source Voltage (Vdss): 650 V
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1024.43 грн |
| 10+ | 693.97 грн |
| 100+ | 529.06 грн |
| 500+ | 494.33 грн |
| CY8C4127AZE-S445T |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 128KB FLASH 64TQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 20x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 54
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| STRVS280X02F |
![]() |
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1667+ | 12.96 грн |
| IQD063N15NM5CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IQD063N15NM5CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
на замовлення 4990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 424.65 грн |
| 10+ | 273.86 грн |
| 100+ | 197.20 грн |
| 500+ | 170.58 грн |
| IQD063N15NM5SCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IQD063N15NM5SCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 151A (Tc)
Rds On (Max) @ Id, Vgs: 6.32mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 159µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
на замовлення 4975 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 424.65 грн |
| 10+ | 273.86 грн |
| 100+ | 197.20 грн |
| 500+ | 170.58 грн |
| IFF600B12ME4B11BOSA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 600A AG-ECONOD-5
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 3 mA
Description: IGBT MOD 1200V 600A AG-ECONOD-5
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 600A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOD-5
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 3 mA
на замовлення 2313 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 16567.53 грн |
| IPD030N03LF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 160A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Description: MOSFET N-CH 30V 160A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IPD030N03LF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 160A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
Description: MOSFET N-CH 30V 160A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 60A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 15 V
на замовлення 1869 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 95.31 грн |
| 10+ | 58.13 грн |
| 100+ | 38.58 грн |
| 500+ | 28.33 грн |
| 1000+ | 25.80 грн |
| FZ1600R17KF6CB2NOSA1 |
![]() |
на замовлення 42 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 103007.70 грн |
| BAS70B5003 |
![]() |
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 70V 70MA SOT23-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io): 70mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: DIODE SCHOTTKY 70V 70MA SOT23-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Voltage - DC Reverse (Vr) (Max): 70 V
Grade: Automotive
Operating Temperature - Junction: 150°C
Supplier Device Package: PG-SOT23-3-3
Current - Average Rectified (Io): 70mA
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
на замовлення 26925 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10377+ | 2.16 грн |
| DEMOBOARDITS4075QTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ITS4075Q
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ITS4075Q
Description: EVAL BOARD FOR ITS4075Q
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ITS4075Q
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5185.68 грн |
| S99WS128P0010 |
Виробник: Infineon Technologies
Description: IC FLASH
DigiKey Programmable: Not Verified
Memory Format: FLASH
Technology: FLASH - NOR
Packaging: Tray
Description: IC FLASH
DigiKey Programmable: Not Verified
Memory Format: FLASH
Technology: FLASH - NOR
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 680 шт
В кошику
од. на суму грн.
| AIMCQ120R020M1TXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 750+ | 733.46 грн |
| AIMCQ120R020M1TXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 43A, 20V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 13.7mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2667 pF @ 800 V
Qualification: AEC-Q101
на замовлення 1668 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1403.36 грн |
| 10+ | 965.52 грн |
| 100+ | 864.50 грн |
| CY2544QC013T |
![]() |
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:9
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: LVCMOS, Crystal
Type: Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC CLOCK GENERATOR 24QFN
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:9
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: LVCMOS, Crystal
Type: Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CY2544QC014T |
![]() |
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:9
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: LVCMOS, Crystal
Type: Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC CLOCK GENERATOR 24QFN
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:9
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: LVCMOS, Crystal
Type: Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CY2545QC010T |
![]() |
Виробник: Infineon Technologies
Description: IC FANOUT DIST 24QFN
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 2:8
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: Clock, Crystal
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC FANOUT DIST 24QFN
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 2:8
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: Clock, Crystal
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CY2544QC011T |
![]() |
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:9
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: LVCMOS, Crystal
Type: Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC CLOCK GENERATOR 24QFN
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:9
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: LVCMOS, Crystal
Type: Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CY2544QC016T |
![]() |
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:9
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: LVCMOS, Crystal
Type: Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC CLOCK GENERATOR 24QFN
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:9
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: LVCMOS, Crystal
Type: Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CY2544QC013 |
![]() |
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:9
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: LVCMOS, Crystal
Type: Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
Description: IC CLOCK GENERATOR 24QFN
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:9
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: LVCMOS, Crystal
Type: Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 490 шт
В кошику
од. на суму грн.
| CY2544QC014 |
![]() |
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:9
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: LVCMOS, Crystal
Type: Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
Description: IC CLOCK GENERATOR 24QFN
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:9
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: LVCMOS, Crystal
Type: Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 490 шт
В кошику
од. на суму грн.
| CY2545QC010 |
![]() |
Виробник: Infineon Technologies
Description: IC FANOUT DIST 24QFN
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 2:8
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: Clock, Crystal
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
Description: IC FANOUT DIST 24QFN
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 2:8
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: Clock, Crystal
Type: Fanout Distribution, Fractional N Synthesizer, Multiplexer, Spread Spectrum Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 490 шт
В кошику
од. на суму грн.
| CY2544QC016 |
![]() |
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR 24QFN
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:9
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: LVCMOS, Crystal
Type: Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
Description: IC CLOCK GENERATOR 24QFN
DigiKey Programmable: Not Verified
Number of Circuits: 4
Divider/Multiplier: Yes/No
PLL: Yes with Bypass
Supplier Device Package: 24-QFN (4x4)
Differential - Input:Output: No/No
Ratio - Input:Output: 1:9
Voltage - Supply: 2.25V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Input: LVCMOS, Crystal
Type: Clock Generator
Frequency - Max: 166MHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 24-UFQFN Exposed Pad
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 490 шт
В кошику
од. на суму грн.
| CYT3DLBBEBQ1BZSGS |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4.063MB FLSH 272BGA
DigiKey Programmable: Not Verified
Number of I/O: 135
Supplier Device Package: 272-BGA (16x16)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 384K x 8
Program Memory Size: 4.063MB (4.063M x 8)
Speed: 240MHz
Mounting Type: Surface Mount
Package / Case: 272-LFBGA
Packaging: Tray
Description: IC MCU 32BIT 4.063MB FLSH 272BGA
DigiKey Programmable: Not Verified
Number of I/O: 135
Supplier Device Package: 272-BGA (16x16)
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Dual-Core
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
EEPROM Size: 128K x 8
Program Memory Type: FLASH
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 384K x 8
Program Memory Size: 4.063MB (4.063M x 8)
Speed: 240MHz
Mounting Type: Surface Mount
Package / Case: 272-LFBGA
Packaging: Tray
на замовлення 960 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2616.86 грн |
| 10+ | 2048.86 грн |
| 25+ | 1931.24 грн |
| 96+ | 1694.06 грн |
| 288+ | 1625.62 грн |
| CYT3DLABGBQ1AESGS |
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tray
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
на замовлення 400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2599.82 грн |
| 10+ | 2034.98 грн |
| 40+ | 1868.73 грн |
| 80+ | 1695.75 грн |
| 240+ | 1624.13 грн |
| CYT3DLABABQ1AESGST |
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tape & Reel (TR)
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tape & Reel (TR)
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| CYT3DLABGBQ1AESGST |
Виробник: Infineon Technologies
Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tape & Reel (TR)
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
Description: IC MCU 32BT 4.063MB FLSH 216TQFP
Packaging: Tape & Reel (TR)
Package / Case: 216-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 240MHz
Program Memory Size: 4.063MB (4.063M x 8)
RAM Size: 384K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: DMA, I2S, LVD, Temp Sensor, WDT
Peripherals: DMA, I2S, LVD, Temp Sensor, WDT
Supplier Device Package: 216-TEQFP (24x24)
Number of I/O: 108
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| CY8C27243-24SXI |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 20-SOIC
Number of I/O: 16
DigiKey Programmable: Verified
Description: IC MCU 8BIT 16KB FLASH 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 4x14b; D/A 4x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 20-SOIC
Number of I/O: 16
DigiKey Programmable: Verified
товару немає в наявності
В кошику
од. на суму грн.
| IPD040N03LF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IPD040N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Supplier Device Package: PG-TO252-3-34
Description: IPD040N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Supplier Device Package: PG-TO252-3-34
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IPD040N03LF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IPD040N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
Description: IPD040N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 4.05mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 15 V
на замовлення 1846 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 92.21 грн |
| 10+ | 55.97 грн |
| 100+ | 36.98 грн |
| 500+ | 27.05 грн |
| 1000+ | 24.59 грн |
| S25FL128LAGNFI013 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4000+ | 139.13 грн |
| S25FL128LAGNFI013 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT SPI/QUAD 8WSON
Packaging: Cut Tape (CT)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (5x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 182.88 грн |
| 10+ | 164.99 грн |
| 25+ | 160.20 грн |
| 50+ | 146.95 грн |
| 100+ | 143.54 грн |
| 250+ | 139.04 грн |
| 500+ | 133.43 грн |
| 1000+ | 130.14 грн |
| IMZA65R040M2HXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 172W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
на замовлення 1261 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 602.88 грн |
| 30+ | 341.27 грн |
| 120+ | 288.74 грн |
| 510+ | 252.44 грн |
| FF2600UXTR33T2M1BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 3300V AG-XHP2K33
Supplier Device Package: AG-XHP2K33
Vgs(th) (Max) @ Id: 5.55V @ 675mA
Gate Charge (Qg) (Max) @ Vgs: 3750nC @ 15V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 750A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 152000pF @ 1.8kV
Current - Continuous Drain (Id) @ 25°C: 720A (Tc)
Drain to Source Voltage (Vdss): 3300V (3.3kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: MOSFET 2N-CH 3300V AG-XHP2K33
Supplier Device Package: AG-XHP2K33
Vgs(th) (Max) @ Id: 5.55V @ 675mA
Gate Charge (Qg) (Max) @ Vgs: 3750nC @ 15V
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 750A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 152000pF @ 1.8kV
Current - Continuous Drain (Id) @ 25°C: 720A (Tc)
Drain to Source Voltage (Vdss): 3300V (3.3kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 401483.52 грн |
| F3L200R07W2S5PB95BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: F3L200R07W2S5PB95BPSA1
Input Capacitance (Cies) @ Vce: 14300 pF @ 25 V
Current - Collector Cutoff (Max): 45 µA
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 200 A
IGBT Type: Trench Field Stop
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: F3L200R07W2S5PB95BPSA1
Input Capacitance (Cies) @ Vce: 14300 pF @ 25 V
Current - Collector Cutoff (Max): 45 µA
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 200 A
IGBT Type: Trench Field Stop
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.67V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7800.22 грн |
| FF4000UXTR33T2M1BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET 2 N-CH 3300V XHP2K17
Supplier Device Package: AG-XHP2K17
Vgs(th) (Max) @ Id: 5.55V @ 450mA
Gate Charge (Qg) (Max) @ Vgs: 2500nC @ 15V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 500A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 101000pF @ 1800V
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Drain to Source Voltage (Vdss): 3300V (3.3kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: MOSFET 2 N-CH 3300V XHP2K17
Supplier Device Package: AG-XHP2K17
Vgs(th) (Max) @ Id: 5.55V @ 450mA
Gate Charge (Qg) (Max) @ Vgs: 2500nC @ 15V
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 500A, 15V
Input Capacitance (Ciss) (Max) @ Vds: 101000pF @ 1800V
Current - Continuous Drain (Id) @ 25°C: 500A (Tc)
Drain to Source Voltage (Vdss): 3300V (3.3kV)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 270584.59 грн |
| TLE98442QXXUMA2 |
![]() |
Виробник: Infineon Technologies
Description: EMBEDDED_POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SPI, SSC, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Number of I/O: 10
Qualification: AEC-Q100
Description: EMBEDDED_POWER
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: LIN, SPI, SSC, UART
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Program Memory Type: FLASH (64kB)
Core Processor: ARM® Cortex®-M0
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Number of I/O: 10
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IRG4BC30FD1PBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/250ns
Switching Energy: 370µJ (on), 1.42mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/250ns
Switching Energy: 370µJ (on), 1.42mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
на замовлення 185 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 138+ | 147.39 грн |
| IRG4BC30FD1PBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/250ns
Switching Energy: 370µJ (on), 1.42mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
Description: IGBT 600V 31A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 46 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/250ns
Switching Energy: 370µJ (on), 1.42mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 57 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 124 A
Power - Max: 100 W
товару немає в наявності
В кошику
од. на суму грн.
| CYW43022CUBT |
![]() |
Виробник: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 106-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 1.125MB ROM, 388kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.2V ~ 4.6V
Power - Output: 20dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 3Mbps
Supplier Device Package: SG-XFWLB-106
GPIO: 40
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SDIO, SPI, UART
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 106-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 1.125MB ROM, 388kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.2V ~ 4.6V
Power - Output: 20dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 3Mbps
Supplier Device Package: SG-XFWLB-106
GPIO: 40
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SDIO, SPI, UART
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| CYW43022CUBT |
![]() |
Виробник: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Cut Tape (CT)
Package / Case: 106-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 1.125MB ROM, 388kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.2V ~ 4.6V
Power - Output: 20dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 3Mbps
Supplier Device Package: SG-XFWLB-106
GPIO: 40
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SDIO, SPI, UART
Description: WI-FI COMBO IOT
Packaging: Cut Tape (CT)
Package / Case: 106-UFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz ~ 5GHz
Memory Size: 1.125MB ROM, 388kB SRAM
Type: TxRx + MCU
Operating Temperature: -20°C ~ 70°C
Voltage - Supply: 3.2V ~ 4.6V
Power - Output: 20dBm
Protocol: Bluetooth v5.4
Data Rate (Max): 3Mbps
Supplier Device Package: SG-XFWLB-106
GPIO: 40
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2C, SDIO, SPI, UART
на замовлення 4994 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 715.24 грн |
| 10+ | 534.66 грн |
| 25+ | 496.29 грн |
| 100+ | 426.16 грн |
| 250+ | 407.29 грн |
| 500+ | 395.91 грн |
| 1000+ | 380.21 грн |
| ICE5QR1070AZXKLA1 |
![]() |
на замовлення 1956 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 273+ | 79.23 грн |
| CY90911ASPMC-GS-106E1 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 64KB MROM 48LQFP
Packaging: Tray
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External
Program Memory Type: Mask ROM
Core Processor: F²MC-16LX
Data Converters: A/D 16x8/10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, LINbus, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 48-LQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IGLT65R110D2ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 15A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
Description: GANFET N-CH 650V 15A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
товару немає в наявності
Мінімальне замовлення: 1800 шт
В кошику
од. на суму грн.
| IGLT65R110D2ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 15A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
Description: GANFET N-CH 650V 15A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 4A
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 400 V
на замовлення 734 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 320.81 грн |
| 10+ | 203.71 грн |
| 100+ | 144.09 грн |
| 500+ | 116.23 грн |
| IQDH29NE2LM5CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IQDH29NE2LM5CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Ta), 789A (Tc)
Rds On (Max) @ Id, Vgs: 0.29mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 278W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1.448mA
Supplier Device Package: PG-WHTFN-9-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 12 V
товару немає в наявності
В кошику
од. на суму грн.
| IPB100N08S207ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 100A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 6.8mOhm @ 80A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Qualification: AEC-Q101
на замовлення 7012 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 115+ | 172.60 грн |
| CY8C4248LQI-BL543T |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 56QFN
Number of I/O: 36
Supplier Device Package: 56-QFN (7x7)
Peripherals: Bluetooth, Brown-out Detect/Reset, DMA, LVD, POR, PWM, SmartCard, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 8x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 56-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 256KB FLASH 56QFN
Number of I/O: 36
Supplier Device Package: 56-QFN (7x7)
Peripherals: Bluetooth, Brown-out Detect/Reset, DMA, LVD, POR, PWM, SmartCard, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 8x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 56-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| CY8C4248LQI-BL573T |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, DMA LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, DMA LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| CY8C4248BZI-L479 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLSH 124VFBGA
DigiKey Programmable: Not Verified
Number of I/O: 98
Supplier Device Package: 124-VFBGA (9x9)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b; D/A 2x7b, 2x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Packaging: Tray
Description: IC MCU 32BIT 256KB FLSH 124VFBGA
DigiKey Programmable: Not Verified
Number of I/O: 98
Supplier Device Package: 124-VFBGA (9x9)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b; D/A 2x7b, 2x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 520 шт
В кошику
од. на суму грн.
| CY8C4248BZA-L489 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 124VFBG
Qualification: AEC-Q100
Number of I/O: 98
Grade: Automotive
Supplier Device Package: 124-VFBGA (9x9)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Packaging: Tray
Description: IC MCU 32BIT 256KB FLASH 124VFBG
Qualification: AEC-Q100
Number of I/O: 98
Grade: Automotive
Supplier Device Package: 124-VFBGA (9x9)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 2600 шт
В кошику
од. на суму грн.
| CY8C4248FNQ-BL583T |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Number of I/O: 36
Supplier Device Package: 76-WLCSP (4.04x3.87)
Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 8x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 76-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
Number of I/O: 36
Supplier Device Package: 76-WLCSP (4.04x3.87)
Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 8x12b SAR; D/A 2x7b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 76-UFBGA, WLCSP
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| CY8C4248FNI-BL593T |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 76-WLCSP (4.04x3.87)
Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 76-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC MCU 32BIT 256KB FLASH 76WLCSP
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 76-WLCSP (4.04x3.87)
Peripherals: Bluetooth, Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b; D/A 1x7b, 1x8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 76-UFBGA, WLCSP
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| CY8C4248BZS-L489T |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 124VFBG
Qualification: AEC-Q100
Number of I/O: 98
Grade: Automotive
Supplier Device Package: 124-VFBGA (9x9)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Packaging: Tape & Reel (TR)
Description: IC MCU 32BIT 256KB FLASH 124VFBG
Qualification: AEC-Q100
Number of I/O: 98
Grade: Automotive
Supplier Device Package: 124-VFBGA (9x9)
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b SAR; D/A 4x7/8b
Core Processor: ARM® Cortex®-M0
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 48MHz
Mounting Type: Surface Mount
Package / Case: 124-VFBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
































