Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126722) > Сторінка 734 з 2113
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IMZA75R008M1HXKSA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 163A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 32.4mA Supplier Device Package: PG-TO247-4-U02 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -5V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 500 V Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
EVALXDP710V2TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR XDP710Embedded: No Utilized IC / Part: XDP710 Contents: Board(s) Type: Interface Function: PMBus Packaging: Bulk |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
ISCH42N04LM7ATMA1 | Infineon Technologies |
Description: ISCH42N04LM7ATMA1Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TDSON-8 Vgs(th) (Max) @ Id: 1.8V @ 130µA Power Dissipation (Max): 3W (Ta), 234W (Tc) Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
|
ISCH42N04LM7ATMA1 | Infineon Technologies |
Description: ISCH42N04LM7ATMA1Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TDSON-8 Vgs(th) (Max) @ Id: 1.8V @ 130µA Power Dissipation (Max): 3W (Ta), 234W (Tc) Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
F3L500R12W3H7H20BPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 315A Packaging: Tray Input Capacitance (Cies) @ Vce: 57900 pF @ 25 V Current - Collector Cutoff (Max): 29 µA Power - Max: 20 mW Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 315 A NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 2.23V @ 15V, 500A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Three Level Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module |
на замовлення 13 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
| FP150R07N3E4PB11BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO3-3 Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 430 W Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 150 A IGBT Type: Trench Field Stop Supplier Device Package: AG-ECONO3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: Module Packaging: Bulk |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
| FP150R07N3E4PB11BPSA1 | Infineon Technologies |
Description: LOW POWER ECONO AG-ECONO3-3 Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V Current - Collector Cutoff (Max): 1 mA Power - Max: 430 W Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 150 A IGBT Type: Trench Field Stop Supplier Device Package: AG-ECONO3 NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A Operating Temperature: -40°C ~ 150°C (TJ) Configuration: Three Phase Inverter Input: Three Phase Bridge Rectifier Mounting Type: Chassis Mount Package / Case: Module Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 6 шт В кошику од. на суму грн. | |||||||||||||
| FP150R07N3E4BOSA1 | Infineon Technologies |
Description: LOW POWER ECONOPackaging: Bulk |
на замовлення 17 шт: термін постачання 21-31 дні (днів) |
|
|||||||||||||
|
S70KS1281DPBHI020 | Infineon Technologies |
Description: IC PSRAM 128MBIT PAR 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 166 MHz Memory Format: PSRAM Supplier Device Package: 24-FBGA (6x8) Memory Interface: Parallel Access Time: 36 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
S70KS1281DPBHI023 | Infineon Technologies |
Description: IC PSRAM 128MBIT PAR 24FBGADigiKey Programmable: Not Verified Memory Organization: 16M x 8 Access Time: 36 ns Memory Interface: Parallel Supplier Device Package: 24-FBGA (6x8) Memory Format: PSRAM Clock Frequency: 166 MHz Technology: PSRAM (Pseudo SRAM) Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Volatile Memory Size: 128Mbit Mounting Type: Surface Mount Package / Case: 24-VBGA Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
IPD020N03LF2SATMA1 | Infineon Technologies |
Description: IPD020N03LF2SATMA1Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 80µA Supplier Device Package: PG-TO252-3-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
|
IPD020N03LF2SATMA1 | Infineon Technologies |
Description: IPD020N03LF2SATMA1Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc) Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V Power Dissipation (Max): 3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 80µA Supplier Device Package: PG-TO252-3-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
FF55MR12W1M1HB11BPSA1 | Infineon Technologies |
Description: EASYDUAL MODULE WITH COOLSIC TREPackaging: Tray Vgs(th) (Max) @ Id: 5.15V @ 6mA FET Feature: Silicon Carbide (SiC) Gate Charge (Qg) (Max) @ Vgs: 45nC @ 18V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 800V Current - Continuous Drain (Id) @ 25°C: 15A (Tj) Technology: Silicon Carbide (SiC) Operating Temperature: -40°C ~ 175°C (TJ) Configuration: 2 N-Channel (Half Bridge) Mounting Type: Chassis Mount Package / Case: Module |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
CY15V104QN-20LPXI | Infineon Technologies |
Description: IC FRAM 4MBIT SPI 20MHZ 8GQFNDigiKey Programmable: Not Verified Memory Organization: 512K x 8 Memory Interface: SPI Supplier Device Package: 8-GQFN (3.23x3.28) Memory Format: FRAM Clock Frequency: 20 MHz Technology: FRAM (Ferroelectric RAM) Voltage - Supply: 1.71V ~ 1.89V Operating Temperature: -40°C ~ 85°C (TA) Memory Type: Non-Volatile Memory Size: 4Mbit Mounting Type: Surface Mount Package / Case: 8-UQFN Packaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 490 шт В кошику од. на суму грн. | ||||||||||||
|
FF750R17ME7DPB11BPSA1 | Infineon Technologies |
Description: FF750R17ME7DPB11BPSA1Input Capacitance (Cies) @ Vce: 78100 pF @ 25 V Current - Collector Cutoff (Max): 5 mA Voltage - Collector Emitter Breakdown (Max): 1700 V Current - Collector (Ic) (Max): 650 A IGBT Type: Trench Field Stop NTC Thermistor: Yes Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 750A Operating Temperature: -40°C ~ 175°C (TJ) Configuration: Half Bridge Inverter Input: Standard Mounting Type: Chassis Mount Package / Case: Module Packaging: Box |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
WLC151568LDXSTXUMA1 | Infineon Technologies |
Description: TYPE-C - EMERGING APP.Packaging: Tape & Reel (TR) Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 24V Applications: Wireless Power Transmitter Current - Supply: 85mA Supplier Device Package: 68-QFN (10x10) Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||
|
WLC151568LDXSXQMA1 | Infineon Technologies |
Description: TYPE-C - EMERGING APP.Packaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 4.5V ~ 24V Applications: Wireless Power Transmitter Current - Supply: 85mA Supplier Device Package: 68-QFN (10x10) Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 840 шт В кошику од. на суму грн. | ||||||||||||
|
IPP023N03LF2SAKSA1 | Infineon Technologies |
Description: MOSFET N-CH 30V 75A TO220ABInput Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO220-3-U05 Vgs(th) (Max) @ Id: 2.35V @ 60µA Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 121A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
CY8CLED16-48PVXI | Infineon Technologies |
Description: IC MCU 8BIT 32KB FLASH 48SSOPSupplier Device Package: 48-SSOP Core Processor: M8C Applications: HB LED Controller Program Memory Type: FLASH (32kB) Controller Series: CY8CLED Voltage - Supply: 3V ~ 5.25V Operating Temperature: -40°C ~ 85°C RAM Size: 2K x 8 Interface: I2C, SPI, UART/USART Mounting Type: Surface Mount Package / Case: 48-BSSOP (0.295", 7.50mm Width) Packaging: Tube DigiKey Programmable: Not Verified Number of I/O: 44 |
на замовлення 147 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
| IDWD40G120C5XKSA2 | Infineon Technologies |
Description: SIC DISCRETE Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 240 шт В кошику од. на суму грн. | |||||||||||||
|
AUIRFR4615TRL | Infineon Technologies |
Description: MOSFET N-CH 150V 33A DPAKQualification: AEC-Q101 Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: TO-252AA (DPAK) Vgs(th) (Max) @ Id: 5V @ 100µA Power Dissipation (Max): 144W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
FF900R12ME7WBPSA1 | Infineon Technologies |
Description: FF900R12ME7WBPSA1Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
REFCAV250KMT7INVTOBO1 | Infineon Technologies |
Description: REFCAV250KMT7INVTOBO1Packaging: Box Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: FF900R12ME7 Embedded: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
SHIELDTLE9185V33TOBO1 | Infineon Technologies |
Description: THIS EVALUATION BOARD COMES WITHPackaging: Bulk Function: Motor Controller/Driver Type: Power Management Contents: Board(s) Utilized IC / Part: TLE9185 Platform: Arduino |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
SHIELDTLE9185TOBO1 | Infineon Technologies |
Description: THIS EVALUATION BOARD COMES WITH Type: Power Management Function: Motor Controller/Driver Packaging: Bulk Platform: Arduino Utilized IC / Part: TLE9185 Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
| TLE94112ESSHIELDTOBO1 | Infineon Technologies |
Description: TLE94112ES_SHIELDPlatform: Arduino Utilized IC / Part: TLE94112EL Contents: Board(s) Type: Power Management Function: Motor Controller/Driver Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
|
IMBG65R020M2HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETInput Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -7V Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Supplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.6V @ 9.5mA Power Dissipation (Max): 326W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V Current - Continuous Drain (Id) @ 25°C: 91A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
|
IMBG65R020M2HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETSupplier Device Package: PG-TO263-7-12 Vgs(th) (Max) @ Id: 5.6V @ 9.5mA FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Power Dissipation (Max): 326W (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): +23V, -7V Drive Voltage (Max Rds On, Min Rds On): 15V, 20V |
на замовлення 508 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
IMBG65R015M2HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 13mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
IMBG65R015M2HXTMA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 115A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 13mA Supplier Device Package: PG-TO263-7-12 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V |
на замовлення 1435 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
| IRSM636-015MBTR | Infineon Technologies |
Description: MODULES POWER DRIVERSPackaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | |||||||||||||
|
SIGC28T65EX1SA1 | Infineon Technologies |
Description: IGBT 3 CHIP 600VCurrent - Collector Pulsed (Icm): 150 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 50 A IGBT Type: Trench Field Stop Supplier Device Package: Die Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 50A Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
TLE4971A050T5E0001XUMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORSPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Polarization: Bidirectional Sensitivity: 24mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: 210kHz Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 700ns Sensor Type: Current Sensor For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 50A Supplier Device Package: PG-TISON-8-6 Number of Channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
TLE4971A075T5E0001XUMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORSPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Polarization: Bidirectional Sensitivity: 16mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: 210kHz Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 700ns Sensor Type: Current Sensor For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 75A Supplier Device Package: PG-TISON-8-6 Number of Channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
TLE4971A120T5E0001XUMA1 | Infineon Technologies |
Description: SPEED & CURRENT SENSORSPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Polarization: Bidirectional Sensitivity: 10mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: 210kHz Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 700ns Sensor Type: Current Sensor For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 120A Supplier Device Package: PG-TISON-8-6 Number of Channels: 1 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
D1461S45TXPSA1 | Infineon Technologies |
Description: DIODE STANDARD 1720A BGD10026K1Packaging: Tray Package / Case: DO-200, Variant Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1720A Supplier Device Package: BG-D10026K-1 Operating Temperature - Junction: -40°C ~ 140°C Current - Reverse Leakage @ Vr: 200 mA @ 4500 V |
товару немає в наявності |
Мінімальне замовлення: 2 шт В кошику од. на суму грн. | ||||||||||||
|
ICE5QR4780BG1XUMA1 | Infineon Technologies |
Description: ICE5QR4780BG1XUMA1 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
|
ICE5QR4780BG1XUMA1 | Infineon Technologies |
Description: ICE5QR4780BG1XUMA1 Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
CY7C1370KV25-167AXCT | Infineon Technologies |
Description: IC SRAM 18MBIT PAR 100TQFPPackaging: Tape & Reel (TR) Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 2.375V ~ 2.625V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||||
|
CY7C1370D-167AXCB | Infineon Technologies |
Description: IC SRAM 18MBIT PAR 100TQFPPackaging: Bag Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 18Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.135V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 167 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3.4 ns Memory Organization: 512K x 36 DigiKey Programmable: Not Verified |
на замовлення 1151 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
| CYT4BFBDJDQ0BZSGSXQLA1 | Infineon Technologies |
Description: IC MCUPackaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 960 шт В кошику од. на суму грн. | |||||||||||||
|
SAK-TC275TC-64F200W DC | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 176LQFPEEPROM Size: 24K x 8 Program Memory Type: FLASH Oscillator Type: External Operating Temperature: -40°C ~ 125°C (TA) RAM Size: 424K x 8 Program Memory Size: 4MB (4M x 8) Speed: 200MHz Mounting Type: Surface Mount Package / Case: 176-LQFP Exposed Pad Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Supplier Device Package: PG-LQFP-176-22 Peripherals: DMA, POR, WDT Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V Core Size: 32-Bit Tri-Core Data Converters: A/D 48x12b SAR, Sigma-Delta Core Processor: TriCore™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
IAUCN08S7L110ATMA1 | Infineon Technologies |
Description: IAUCN08S7L110ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
|
IAUCN08S7L110ATMA1 | Infineon Technologies |
Description: IAUCN08S7L110ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tj) Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 4781 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
IAUCN10S7L180ATMA1 | Infineon Technologies |
Description: IAUCN10S7L180ATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tj) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
|
IAUCN10S7L180ATMA1 | Infineon Technologies |
Description: IAUCN10S7L180ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tj) Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V Power Dissipation (Max): 58W (Tc) Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 3875 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
| CG10055AFT | Infineon Technologies |
Description: IC MEMORY Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| TLE4971A050N5E0002XUMA1 | Infineon Technologies |
Description: CURRENT SENS ATV Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||
|
CY9BF466LQN-G-AVE2 | Infineon Technologies |
Description: IC MCU 32BIT 544KB FLASH 64QFNPackaging: Tray Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 544KB (544K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 15x12b; D/A 2x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 64-QFN (9x9) Number of I/O: 48 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2600 шт В кошику од. на суму грн. | ||||||||||||
|
CY9BF466LPMC-G-JNE2 | Infineon Technologies |
Description: IC MCU 32BIT 544KB FLASH 64LQFPPackaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 160MHz Program Memory Size: 544KB (544K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M4F Data Converters: A/D 15x12b; D/A 2x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART Peripherals: DMA, LVD, POR, PWM, WDT Supplier Device Package: 64-LQFP (12x12) Number of I/O: 48 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1190 шт В кошику од. на суму грн. | ||||||||||||
|
CY8C5466LTI-063 | Infineon Technologies |
Description: IC MCU 32BIT 64KB FLASH 68QFNDigiKey Programmable: Not Verified Number of I/O: 36 Supplier Device Package: 68-QFN (8x8) Peripherals: CapSense, DMA, LCD, POR, PWM, WDT Connectivity: I2C, LINbus, SPI, UART/USART, USB Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V Core Size: 32-Bit Single-Core Data Converters: A/D 2x12b; D/A 4x8b Core Processor: ARM® Cortex®-M3 EEPROM Size: 2K x 8 Program Memory Type: FLASH Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) RAM Size: 16K x 8 Program Memory Size: 64KB (64K x 8) Speed: 67MHz Mounting Type: Surface Mount Package / Case: 68-VFQFN Exposed Pad Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
LINDEMOBOARDTOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR TLE7257SJPackaging: Bulk Function: CAN Transceiver Type: Interface Contents: Board(s) Utilized IC / Part: TLE7257SJ, TLE7258SJ, TLE7259-3G Secondary Attributes: On-Board LEDs, Test Points Embedded: No |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
IRSM506-076PA | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 4A 23SOPSupplier Device Package: 23-SOP Voltage - Load: 480V (Max) Technology: IGBT Current - Peak Output: 15A Current - Output / Channel: 4A Applications: AC Motors Voltage - Supply: 13.5V ~ 16.5V Output Configuration: Half Bridge (3) Operating Temperature: -40°C ~ 150°C (TJ) Interface: Logic Mounting Type: Surface Mount Package / Case: 23-PowerSMD Module Features: Bootstrap Circuit Packaging: Tube Load Type: Inductive Fault Protection: UVLO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
ICE5AR4780BZS1XKLA1 | Infineon Technologies |
Description: ICE5AR4780BZS1XKLA1Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Duty Cycle: 75% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Either Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 32V Supplier Device Package: PG-DIP-7-10 Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 16 V Power (Watts): 27.5 W |
на замовлення 1978 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
CY7C64215-28PVXIT | Infineon Technologies |
Description: IC CNTRLR USB FS 28SSOPPackage / Case: 28-SSOP (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified Number of I/O: 22 Supplier Device Package: 28-SSOP Core Processor: M8C Applications: USB Microcontroller Program Memory Type: FLASH (16kB) Controller Series: CY7C642xx Voltage - Supply: 3V ~ 5.25V Operating Temperature: -40°C ~ 85°C RAM Size: 1K x 8 Interface: I2C, USB Mounting Type: Surface Mount |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
|
CY8CKIT4700SPLUSTOBO1 | Infineon Technologies |
Description: CY8CKIT-4700S-PLUSPackaging: Tray Interface: I2C, SPI, UART, USB Embedded: Yes, MCU Utilized IC / Part: PSoC 4700S Sensor Type: Proximity, Inductive Contents: Board(s) |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
DD1600S33HE4BPSA1 | Infineon Technologies |
Description: IHV IHM TPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 1600A Supplier Device Package: AG-IHVB130-3 Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 3300 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 1.6 kA |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
ISC060N06NM6ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 62A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V Power Dissipation (Max): 3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 14µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||
|
CYW920829B0M2P4TAI100-ES | Infineon Technologies |
Description: AIROC CYW20829B0-P4TAI100 MODULEPackaging: Box Type: Transceiver; Bluetooth® 5.x (BLE) Contents: Board(s), Cable(s), Accessories Utilized IC / Part: CYW20829 |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
| IM06B15AC1SXKMA1 | Infineon Technologies |
Description: CIPOS MINI Packaging: Tube |
товару немає в наявності |
Мінімальне замовлення: 280 шт В кошику од. на суму грн. |
| IMZA75R008M1HXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 500 V
Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 500 V
Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V
товару немає в наявності
В кошику
од. на суму грн.
| EVALXDP710V2TOBO1 |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR XDP710
Embedded: No
Utilized IC / Part: XDP710
Contents: Board(s)
Type: Interface
Function: PMBus
Packaging: Bulk
Description: EVAL BOARD FOR XDP710
Embedded: No
Utilized IC / Part: XDP710
Contents: Board(s)
Type: Interface
Function: PMBus
Packaging: Bulk
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 24293.75 грн |
| ISCH42N04LM7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: ISCH42N04LM7ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 1.8V @ 130µA
Power Dissipation (Max): 3W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: ISCH42N04LM7ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 1.8V @ 130µA
Power Dissipation (Max): 3W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| ISCH42N04LM7ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: ISCH42N04LM7ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 1.8V @ 130µA
Power Dissipation (Max): 3W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: ISCH42N04LM7ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 1.8V @ 130µA
Power Dissipation (Max): 3W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику
од. на суму грн.
| F3L500R12W3H7H20BPSA1 |
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 315A
Packaging: Tray
Input Capacitance (Cies) @ Vce: 57900 pF @ 25 V
Current - Collector Cutoff (Max): 29 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 315 A
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.23V @ 15V, 500A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Description: IGBT MOD 1200V 315A
Packaging: Tray
Input Capacitance (Cies) @ Vce: 57900 pF @ 25 V
Current - Collector Cutoff (Max): 29 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 315 A
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.23V @ 15V, 500A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6778.75 грн |
| FP150R07N3E4PB11BPSA1 |
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3-3
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 430 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 150 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
Description: LOW POWER ECONO AG-ECONO3-3
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 430 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 150 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 8345.58 грн |
| FP150R07N3E4PB11BPSA1 |
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3-3
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 430 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 150 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
Description: LOW POWER ECONO AG-ECONO3-3
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 430 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 150 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 6 шт
В кошику
од. на суму грн.
| FP150R07N3E4BOSA1 |
![]() |
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 11533.55 грн |
| S70KS1281DPBHI020 |
![]() |
Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 36 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC PSRAM 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 36 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| S70KS1281DPBHI023 |
![]() |
Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT PAR 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Access Time: 36 ns
Memory Interface: Parallel
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 166 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
Description: IC PSRAM 128MBIT PAR 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Access Time: 36 ns
Memory Interface: Parallel
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 166 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| IPD020N03LF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IPD020N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Description: IPD020N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| IPD020N03LF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IPD020N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Description: IPD020N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| FF55MR12W1M1HB11BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: EASYDUAL MODULE WITH COOLSIC TRE
Packaging: Tray
Vgs(th) (Max) @ Id: 5.15V @ 6mA
FET Feature: Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
Description: EASYDUAL MODULE WITH COOLSIC TRE
Packaging: Tray
Vgs(th) (Max) @ Id: 5.15V @ 6mA
FET Feature: Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2756.22 грн |
| CY15V104QN-20LPXI |
![]() |
Виробник: Infineon Technologies
Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Memory Interface: SPI
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.71V ~ 1.89V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 8-UQFN
Packaging: Tray
Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Memory Interface: SPI
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.71V ~ 1.89V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 8-UQFN
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 490 шт
В кошику
од. на суму грн.
| FF750R17ME7DPB11BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: FF750R17ME7DPB11BPSA1
Input Capacitance (Cies) @ Vce: 78100 pF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 650 A
IGBT Type: Trench Field Stop
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 750A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
Description: FF750R17ME7DPB11BPSA1
Input Capacitance (Cies) @ Vce: 78100 pF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 650 A
IGBT Type: Trench Field Stop
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 750A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 17823.45 грн |
| WLC151568LDXSTXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: TYPE-C - EMERGING APP.
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
Description: TYPE-C - EMERGING APP.
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику
од. на суму грн.
| WLC151568LDXSXQMA1 |
![]() |
Виробник: Infineon Technologies
Description: TYPE-C - EMERGING APP.
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
Description: TYPE-C - EMERGING APP.
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 840 шт
В кошику
од. на суму грн.
| IPP023N03LF2SAKSA1 |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-U05
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 121A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 30V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-U05
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 121A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 87.22 грн |
| 10+ | 66.58 грн |
| 100+ | 51.87 грн |
| 500+ | 39.63 грн |
| 1000+ | 32.48 грн |
| CY8CLED16-48PVXI |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Supplier Device Package: 48-SSOP
Core Processor: M8C
Applications: HB LED Controller
Program Memory Type: FLASH (32kB)
Controller Series: CY8CLED
Voltage - Supply: 3V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I2C, SPI, UART/USART
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Number of I/O: 44
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Supplier Device Package: 48-SSOP
Core Processor: M8C
Applications: HB LED Controller
Program Memory Type: FLASH (32kB)
Controller Series: CY8CLED
Voltage - Supply: 3V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I2C, SPI, UART/USART
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Number of I/O: 44
на замовлення 147 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1143.40 грн |
| 10+ | 873.97 грн |
| 30+ | 807.47 грн |
| 120+ | 702.07 грн |
| AUIRFR4615TRL |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 150V 33A DPAK
Qualification: AEC-Q101
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Description: MOSFET N-CH 150V 33A DPAK
Qualification: AEC-Q101
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-252AA (DPAK)
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 21A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
товару немає в наявності
В кошику
од. на суму грн.
| REFCAV250KMT7INVTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: REFCAV250KMT7INVTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FF900R12ME7
Embedded: No
Description: REFCAV250KMT7INVTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: FF900R12ME7
Embedded: No
товару немає в наявності
В кошику
од. на суму грн.
| SHIELDTLE9185V33TOBO1 |
![]() |
Виробник: Infineon Technologies
Description: THIS EVALUATION BOARD COMES WITH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9185
Platform: Arduino
Description: THIS EVALUATION BOARD COMES WITH
Packaging: Bulk
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLE9185
Platform: Arduino
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4076.45 грн |
| SHIELDTLE9185TOBO1 |
Виробник: Infineon Technologies
Description: THIS EVALUATION BOARD COMES WITH
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
Platform: Arduino
Utilized IC / Part: TLE9185
Contents: Board(s)
Description: THIS EVALUATION BOARD COMES WITH
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
Platform: Arduino
Utilized IC / Part: TLE9185
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4175.56 грн |
| TLE94112ESSHIELDTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: TLE94112ES_SHIELD
Platform: Arduino
Utilized IC / Part: TLE94112EL
Contents: Board(s)
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
Description: TLE94112ES_SHIELD
Platform: Arduino
Utilized IC / Part: TLE94112EL
Contents: Board(s)
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
товару немає в наявності
В кошику
од. на суму грн.
| IMBG65R020M2HXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Power Dissipation (Max): 326W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SILICON CARBIDE MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
Power Dissipation (Max): 326W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IMBG65R020M2HXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Power Dissipation (Max): 326W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Description: SILICON CARBIDE MOSFET
Supplier Device Package: PG-TO263-7-12
Vgs(th) (Max) @ Id: 5.6V @ 9.5mA
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 24mOhm @ 46.9A, 18V
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Power Dissipation (Max): 326W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
на замовлення 508 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1091.07 грн |
| 10+ | 739.13 грн |
| 100+ | 621.57 грн |
| IMBG65R015M2HXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1000+ | 659.64 грн |
| IMBG65R015M2HXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 64.2A, 18V
Power Dissipation (Max): 416W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
на замовлення 1435 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1298.02 грн |
| 10+ | 888.10 грн |
| 100+ | 777.50 грн |
| SIGC28T65EX1SA1 |
![]() |
Виробник: Infineon Technologies
Description: IGBT 3 CHIP 600V
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
IGBT Type: Trench Field Stop
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 50A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
Description: IGBT 3 CHIP 600V
Current - Collector Pulsed (Icm): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 50 A
IGBT Type: Trench Field Stop
Supplier Device Package: Die
Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 50A
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Bulk
товару немає в наявності
В кошику
од. на суму грн.
| TLE4971A050T5E0001XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 24mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 50A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLE4971A075T5E0001XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 16mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 75A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| TLE4971A120T5E0001XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 10mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 120A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
Description: SPEED & CURRENT SENSORS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Polarization: Bidirectional
Sensitivity: 10mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: 210kHz
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 700ns
Sensor Type: Current Sensor
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 120A
Supplier Device Package: PG-TISON-8-6
Number of Channels: 1
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| D1461S45TXPSA1 |
![]() |
Виробник: Infineon Technologies
Description: DIODE STANDARD 1720A BGD10026K1
Packaging: Tray
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1720A
Supplier Device Package: BG-D10026K-1
Operating Temperature - Junction: -40°C ~ 140°C
Current - Reverse Leakage @ Vr: 200 mA @ 4500 V
Description: DIODE STANDARD 1720A BGD10026K1
Packaging: Tray
Package / Case: DO-200, Variant
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1720A
Supplier Device Package: BG-D10026K-1
Operating Temperature - Junction: -40°C ~ 140°C
Current - Reverse Leakage @ Vr: 200 mA @ 4500 V
товару немає в наявності
Мінімальне замовлення: 2 шт
В кошику
од. на суму грн.
| ICE5QR4780BG1XUMA1 |
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CY7C1370KV25-167AXCT |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.375V ~ 2.625V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 750 шт
В кошику
од. на суму грн.
| CY7C1370D-167AXCB |
![]() |
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 18MBIT PAR 100TQFP
Packaging: Bag
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 167 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.4 ns
Memory Organization: 512K x 36
DigiKey Programmable: Not Verified
на замовлення 1151 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 3317.16 грн |
| CYT4BFBDJDQ0BZSGSXQLA1 |
![]() |
товару немає в наявності
Мінімальне замовлення: 960 шт
В кошику
од. на суму грн.
| SAK-TC275TC-64F200W DC |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 176LQFP
EEPROM Size: 24K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 424K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Supplier Device Package: PG-LQFP-176-22
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Processor: TriCore™
Description: IC MCU 32BIT 4MB FLASH 176LQFP
EEPROM Size: 24K x 8
Program Memory Type: FLASH
Oscillator Type: External
Operating Temperature: -40°C ~ 125°C (TA)
RAM Size: 424K x 8
Program Memory Size: 4MB (4M x 8)
Speed: 200MHz
Mounting Type: Surface Mount
Package / Case: 176-LQFP Exposed Pad
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Supplier Device Package: PG-LQFP-176-22
Peripherals: DMA, POR, WDT
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Voltage - Supply (Vcc/Vdd): 1.17V ~ 5.5V
Core Size: 32-Bit Tri-Core
Data Converters: A/D 48x12b SAR, Sigma-Delta
Core Processor: TriCore™
товару немає в наявності
В кошику
од. на суму грн.
| IAUCN08S7L110ATMA1 |
Виробник: Infineon Technologies
Description: IAUCN08S7L110ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V
Qualification: AEC-Q101
Description: IAUCN08S7L110ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IAUCN08S7L110ATMA1 |
Виробник: Infineon Technologies
Description: IAUCN08S7L110ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V
Qualification: AEC-Q101
Description: IAUCN08S7L110ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1056 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4781 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 103.08 грн |
| 10+ | 62.61 грн |
| 100+ | 41.65 грн |
| 500+ | 30.65 грн |
| 1000+ | 27.94 грн |
| 2000+ | 26.78 грн |
| IAUCN10S7L180ATMA1 |
Виробник: Infineon Technologies
Description: IAUCN10S7L180ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V
Qualification: AEC-Q101
Description: IAUCN10S7L180ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IAUCN10S7L180ATMA1 |
Виробник: Infineon Technologies
Description: IAUCN10S7L180ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V
Qualification: AEC-Q101
Description: IAUCN10S7L180ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 58W (Tc)
Vgs(th) (Max) @ Id: 2V @ 14µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 868 pF @ 50 V
Qualification: AEC-Q101
на замовлення 3875 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 107.84 грн |
| 10+ | 65.44 грн |
| 100+ | 43.61 грн |
| 500+ | 32.15 грн |
| 1000+ | 29.33 грн |
| 2000+ | 28.40 грн |
| TLE4971A050N5E0002XUMA1 |
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| CY9BF466LQN-G-AVE2 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 544KB FLASH 64QFN
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-QFN (9x9)
Number of I/O: 48
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2600 шт
В кошику
од. на суму грн.
| CY9BF466LPMC-G-JNE2 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 48
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 544KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 544KB (544K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 15x12b; D/A 2x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 64-LQFP (12x12)
Number of I/O: 48
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1190 шт
В кошику
од. на суму грн.
| CY8C5466LTI-063 |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 64KB FLASH 68QFN
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x12b; D/A 4x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
Description: IC MCU 32BIT 64KB FLASH 68QFN
DigiKey Programmable: Not Verified
Number of I/O: 36
Supplier Device Package: 68-QFN (8x8)
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Connectivity: I2C, LINbus, SPI, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 2x12b; D/A 4x8b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 2K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 64KB (64K x 8)
Speed: 67MHz
Mounting Type: Surface Mount
Package / Case: 68-VFQFN Exposed Pad
Packaging: Tray
товару немає в наявності
В кошику
од. на суму грн.
| LINDEMOBOARDTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE7257SJ
Packaging: Bulk
Function: CAN Transceiver
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE7257SJ, TLE7258SJ, TLE7259-3G
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
Description: EVAL BOARD FOR TLE7257SJ
Packaging: Bulk
Function: CAN Transceiver
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE7257SJ, TLE7258SJ, TLE7259-3G
Secondary Attributes: On-Board LEDs, Test Points
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6489.33 грн |
| IRSM506-076PA |
![]() |
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 4A 23SOP
Supplier Device Package: 23-SOP
Voltage - Load: 480V (Max)
Technology: IGBT
Current - Peak Output: 15A
Current - Output / Channel: 4A
Applications: AC Motors
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: 23-PowerSMD Module
Features: Bootstrap Circuit
Packaging: Tube
Load Type: Inductive
Fault Protection: UVLO
Description: IC HALF BRIDGE DRIVER 4A 23SOP
Supplier Device Package: 23-SOP
Voltage - Load: 480V (Max)
Technology: IGBT
Current - Peak Output: 15A
Current - Output / Channel: 4A
Applications: AC Motors
Voltage - Supply: 13.5V ~ 16.5V
Output Configuration: Half Bridge (3)
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: 23-PowerSMD Module
Features: Bootstrap Circuit
Packaging: Tube
Load Type: Inductive
Fault Protection: UVLO
товару немає в наявності
В кошику
од. на суму грн.
| ICE5AR4780BZS1XKLA1 |
![]() |
Виробник: Infineon Technologies
Description: ICE5AR4780BZS1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 27.5 W
Description: ICE5AR4780BZS1XKLA1
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Duty Cycle: 75%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 32V
Supplier Device Package: PG-DIP-7-10
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Power (Watts): 27.5 W
на замовлення 1978 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.80 грн |
| 50+ | 61.82 грн |
| 100+ | 55.22 грн |
| 500+ | 40.98 грн |
| 1000+ | 37.48 грн |
| CY7C64215-28PVXIT |
![]() |
Виробник: Infineon Technologies
Description: IC CNTRLR USB FS 28SSOP
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 22
Supplier Device Package: 28-SSOP
Core Processor: M8C
Applications: USB Microcontroller
Program Memory Type: FLASH (16kB)
Controller Series: CY7C642xx
Voltage - Supply: 3V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
RAM Size: 1K x 8
Interface: I2C, USB
Mounting Type: Surface Mount
Description: IC CNTRLR USB FS 28SSOP
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Number of I/O: 22
Supplier Device Package: 28-SSOP
Core Processor: M8C
Applications: USB Microcontroller
Program Memory Type: FLASH (16kB)
Controller Series: CY7C642xx
Voltage - Supply: 3V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
RAM Size: 1K x 8
Interface: I2C, USB
Mounting Type: Surface Mount
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CY8CKIT4700SPLUSTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: CY8CKIT-4700S-PLUS
Packaging: Tray
Interface: I2C, SPI, UART, USB
Embedded: Yes, MCU
Utilized IC / Part: PSoC 4700S
Sensor Type: Proximity, Inductive
Contents: Board(s)
Description: CY8CKIT-4700S-PLUS
Packaging: Tray
Interface: I2C, SPI, UART, USB
Embedded: Yes, MCU
Utilized IC / Part: PSoC 4700S
Sensor Type: Proximity, Inductive
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 24110.59 грн |
| DD1600S33HE4BPSA1 |
![]() |
Виробник: Infineon Technologies
Description: IHV IHM T
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1600A
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 1.6 kA
Description: IHV IHM T
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 1600A
Supplier Device Package: AG-IHVB130-3
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 3300 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 1.6 kA
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 85378.61 грн |
| ISC060N06NM6ATMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| CYW920829B0M2P4TAI100-ES |
![]() |
Виробник: Infineon Technologies
Description: AIROC CYW20829B0-P4TAI100 MODULE
Packaging: Box
Type: Transceiver; Bluetooth® 5.x (BLE)
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: CYW20829
Description: AIROC CYW20829B0-P4TAI100 MODULE
Packaging: Box
Type: Transceiver; Bluetooth® 5.x (BLE)
Contents: Board(s), Cable(s), Accessories
Utilized IC / Part: CYW20829
на замовлення 30 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5736.84 грн |






































