Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (124880) > Сторінка 736 з 2082

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TLE92623BQXXUMA2 TLE92623BQXXUMA2 Infineon Technologies Infineon-TLE9262-3BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609785aa013951 Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+142.73 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPT017N10NM5LF2ATMA1 IPT017N10NM5LF2ATMA1 Infineon Technologies infineon-ipt017n10nm5lf2-datasheet-en.pdf Description: IPT017N10NM5LF2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+227.05 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IPT017N10NM5LF2ATMA1 IPT017N10NM5LF2ATMA1 Infineon Technologies infineon-ipt017n10nm5lf2-datasheet-en.pdf Description: IPT017N10NM5LF2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
на замовлення 5487 шт:
термін постачання 21-31 дні (днів)
1+565.39 грн
10+369.75 грн
100+270.96 грн
500+251.15 грн
В кошику  од. на суму  грн.
IR7304SPBF IR7304SPBF Infineon Technologies ir7304s.pdf?fileId=5546d462533600a4015355d62a63182e Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 60mA, 130mA
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 200ns, 100ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 700 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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CY9AFA41NAPMC-G-JNE2 CY9AFA41NAPMC-G-JNE2 Infineon Technologies Description: IC MCU 32BIT 96KB 100LQFP
Number of I/O: 83
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 96KB (96K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
товару немає в наявності
 Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
CY7C1363C-133AXC CY7C1363C-133AXC Infineon Technologies Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 144 шт
В кошику  од. на суму  грн.
FF450R17ME4PBOSA1 FF450R17ME4PBOSA1 Infineon Technologies Infineon-FF450R17ME4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b3e41ca75068e Description: IGBT MOD 1700V 900A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+12880.47 грн
В кошику  од. на суму  грн.
S26HL512TFPBHV010 S26HL512TFPBHV010 Infineon Technologies Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54 Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
 Мінімальне замовлення: 338 шт
В кошику  од. на суму  грн.
CY8C3445AXI-104T CY8C3445AXI-104T Infineon Technologies download Description: IC MCU 8BIT 32KB FLASH 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 62
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 2x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
KITXMC71EVKLITEV1TOBO1 KITXMC71EVKLITEV1TOBO1 Infineon Technologies Infineon-KIT_XMC71_EVK_LITE_V1_XMC7100_Lite_Evaluation_Board_release_notes-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c7ec4575d0c6b Description: XMC7100D EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M0+, Cortex®-M7
Utilized IC / Part: XMC7100D
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
1+2197.10 грн
В кошику  од. на суму  грн.
EVALXMC4800PSOC6M5TOBO1 EVALXMC4800PSOC6M5TOBO1 Infineon Technologies Infineon-UG-2023-07-EVAL-XMC4800PSOC6M5-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e12871028537c Description: XMC4800 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4800
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+17434.65 грн
В кошику  од. на суму  грн.
IQD009N06NM5SCATMA1 IQD009N06NM5SCATMA1 Infineon Technologies Infineon-IQD009N06NM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b653e47149d2 Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
товару немає в наявності
 Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IQD009N06NM5SCATMA1 IQD009N06NM5SCATMA1 Infineon Technologies Infineon-IQD009N06NM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b653e47149d2 Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
на замовлення 4569 шт:
термін постачання 21-31 дні (днів)
1+366.57 грн
10+234.31 грн
100+166.99 грн
500+138.98 грн
В кошику  од. на суму  грн.
IPA65R225C7XKSA1 IPA65R225C7XKSA1 Infineon Technologies Infineon-IPA65R225C7-DS-v02_00-en.pdf?fileId=db3a304343bec32d0143bf743f7c0c63 Description: MOSFET N-CH 650V 7A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
на замовлення 419 шт:
термін постачання 21-31 дні (днів)
251+89.41 грн
Мінімальне замовлення: 251 шт
В кошику  од. на суму  грн.
CYT2B75DADQ0AZEGSHQLA1 Infineon Technologies Description: IC MCU
Packaging: Tray
товару немає в наявності
 Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
IR21064PBF IR21064PBF Infineon Technologies ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673 Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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REFDR3KIMBGSIC2MATOBO1 REFDR3KIMBGSIC2MATOBO1 Infineon Technologies Infineon-REF-DR3KIMBGSIC2MA-UserManual-v01_01-EN.pdf?fileId=8ac78c8c8eeb092c018f290cd8d6615c Description: EVAL BOARD FOR 1ED3122MC12H
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3122MC12H, IMBG120R040M2H
Primary Attributes: Isolated
Secondary Attributes: On-Board Test Points
Embedded: No
товару немає в наявності
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S25FS128SAGBHM200 S25FS128SAGBHM200 Infineon Technologies Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
товару немає в наявності
 Мінімальне замовлення: 338 шт
В кошику  од. на суму  грн.
CY8C4149LDSS593XQLA1 CY8C4149LDSS593XQLA1 Infineon Technologies infineon-cy8c41xx-psoc-automotive-4100s-max-based-on-arm-cortex--m0-cpu-datasheet-en.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 384KB FLASH 48VFQFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 40
на замовлення 2597 шт:
термін постачання 21-31 дні (днів)
1+650.82 грн
10+487.84 грн
25+453.21 грн
100+389.60 грн
260+371.92 грн
520+361.77 грн
1040+347.62 грн
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CY8C4147LDSS593XQLA1 CY8C4147LDSS593XQLA1 Infineon Technologies infineon-cy8c41xx-psoc-automotive-4100s-max-based-on-arm-cortex--m0-cpu-datasheet-en.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 128KB FLASH 48VFQFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 2600 шт
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CY8C4147AZSS595XQLA1 CY8C4147AZSS595XQLA1 Infineon Technologies infineon-cy8c41xx-psoc-automotive-4100s-max-based-on-arm-cortex--m0-cpu-datasheet-en.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 1600 шт
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CY8C4148LDSS593XQLA1 CY8C4148LDSS593XQLA1 Infineon Technologies Infineon-CY8C4148AZS-S555-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 256KB FLASH 48VFQFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 40
товару немає в наявності
 Мінімальне замовлення: 2600 шт
В кошику  од. на суму  грн.
CY8C4148AZSS595XQLA1 CY8C4148AZSS595XQLA1 Infineon Technologies infineon-cy8c41xx-psoc-automotive-4100s-max-based-on-arm-cortex--m0-cpu-datasheet-en.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
CY8C4149AZSS595XQLA1 CY8C4149AZSS595XQLA1 Infineon Technologies infineon-cy8c41xx-psoc-automotive-4100s-max-based-on-arm-cortex--m0-cpu-datasheet-en.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 384KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
CY8C4148AZSS598XQLA1 CY8C4148AZSS598XQLA1 Infineon Technologies infineon-cy8c41xx-psoc-automotive-4100s-max-based-on-arm-cortex--m0-cpu-datasheet-en.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 84
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
CY8C4149AZSS598XQLA1 CY8C4149AZSS598XQLA1 Infineon Technologies infineon-cy8c41xx-psoc-automotive-4100s-max-based-on-arm-cortex--m0-cpu-datasheet-en.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e Description: IC MCU 32BIT 384KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 84
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
CY8C20111-SX1I CY8C20111-SX1I Infineon Technologies Description: IC CAPSENSE EXP 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Current - Supply: 1.5mA
Number of Inputs: Up to 1
Supplier Device Package: 8-SOIC
Proximity Detection: No
LED Driver Channels: Up to 1
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S27KL0641DABHI020 S27KL0641DABHI020 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S27KS0641DPBHV020 S27KS0641DPBHV020 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 64MBIT PARALLEL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
2+303.66 грн
10+272.67 грн
25+264.54 грн
50+242.47 грн
100+236.71 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
S6J326CKSPSE20000 S6J326CKSPSE20000 Infineon Technologies Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_int Description: IC MCU 32BIT 2.0625MB 208TEQFP
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: 208-TEQFP (28x28)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 46x12b
Core Processor: Arm® Cortex®-R5F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 240MHz
Mounting Type: Surface Mount
Package / Case: 208-LQFP Exposed Pad
Packaging: Tray
товару немає в наявності
 Мінімальне замовлення: 360 шт
В кошику  од. на суму  грн.
AUIRFP4004 AUIRFP4004 Infineon Technologies auirfp4004.pdf?fileId=5546d462533600a4015355b1b7a51450 Description: MOSFET N-CH 40V 195A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IR21814STRPBF IR21814STRPBF Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 3390 шт:
термін постачання 21-31 дні (днів)
2+187.95 грн
10+134.84 грн
25+123.34 грн
100+103.85 грн
250+98.18 грн
500+96.04 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IMZA75R090M1HXKSA1 IMZA75R090M1HXKSA1 Infineon Technologies Infineon-IMZA75R140M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dcbd2f131495c Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Rds On (Max) @ Id, Vgs: 83mOhm @ 7.4A, 20V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.6mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 500 V
на замовлення 208 шт:
термін постачання 21-31 дні (днів)
1+456.66 грн
30+253.03 грн
120+211.87 грн
В кошику  од. на суму  грн.
IMT40R025M2HXTMA1 IMT40R025M2HXTMA1 Infineon Technologies Infineon-IMT40R025M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51 Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+311.18 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IMT40R025M2HXTMA1 IMT40R025M2HXTMA1 Infineon Technologies Infineon-IMT40R025M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51 Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
на замовлення 2019 шт:
термін постачання 21-31 дні (днів)
1+724.60 грн
10+480.21 грн
100+366.79 грн
В кошику  од. на суму  грн.
IMZA75R060M1HXKSA1 IMZA75R060M1HXKSA1 Infineon Technologies Infineon-IMZA75R060M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dcbc1100b493c Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
1+573.93 грн
30+323.55 грн
120+273.30 грн
В кошику  од. на суму  грн.
IMZA75R040M1HXKSA1 IMZA75R040M1HXKSA1 Infineon Technologies Infineon-IMZA75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6f5b54e0f1a Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 185W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
на замовлення 212 шт:
термін постачання 21-31 дні (днів)
1+678.78 грн
30+388.54 грн
120+330.33 грн
В кошику  од. на суму  грн.
IMBG40R011M2HXTMA1 IMBG40R011M2HXTMA1 Infineon Technologies Infineon-IMBG40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f57b81694323d Description: SIC-MOS
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: PG-TO263-7-11
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 133A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IMBG40R011M2HXTMA1 IMBG40R011M2HXTMA1 Infineon Technologies Infineon-IMBG40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f57b81694323d Description: SIC-MOS
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: PG-TO263-7-11
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 133A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
на замовлення 728 шт:
термін постачання 21-31 дні (днів)
1+1038.36 грн
10+734.63 грн
100+716.57 грн
В кошику  од. на суму  грн.
IMZA75R020M1HXKSA1 IMZA75R020M1HXKSA1 Infineon Technologies Infineon-IMZA75R020M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6da53810eef Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 11.7mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
1+1066.32 грн
30+634.09 грн
120+566.22 грн
В кошику  од. на суму  грн.
IMZA75R008M1HXKSA1 IMZA75R008M1HXKSA1 Infineon Technologies Infineon-IMZA75R008M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c95e1e0eb6 Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 500 V
Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
EVALXDP710V2TOBO1 EVALXDP710V2TOBO1 Infineon Technologies Infineon-Evaluation_board_XDP710_2307_PL88_2308_013018-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a3c31c9195aa1 Description: EVAL BOARD FOR XDP710
Embedded: No
Utilized IC / Part: XDP710
Contents: Board(s)
Type: Interface
Function: PMBus
Packaging: Bulk
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+23794.50 грн
В кошику  од. на суму  грн.
ISCH42N04LM7ATMA1 ISCH42N04LM7ATMA1 Infineon Technologies Infineon-ISCH42N04LM7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fdd66f1e27566 Description: ISCH42N04LM7ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 1.8V @ 130µA
Power Dissipation (Max): 3W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
 Мінімальне замовлення: 5000 шт
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ISCH42N04LM7ATMA1 ISCH42N04LM7ATMA1 Infineon Technologies Infineon-ISCH42N04LM7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fdd66f1e27566 Description: ISCH42N04LM7ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 1.8V @ 130µA
Power Dissipation (Max): 3W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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F3L500R12W3H7H20BPSA1 F3L500R12W3H7H20BPSA1 Infineon Technologies Description: IGBT MOD 1200V 315A
Packaging: Tray
Input Capacitance (Cies) @ Vce: 57900 pF @ 25 V
Current - Collector Cutoff (Max): 29 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 315 A
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.23V @ 15V, 500A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
1+6639.44 грн
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FP150R07N3E4PB11BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO3-3
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 430 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 150 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
3+8174.07 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
FP150R07N3E4PB11BPSA1 Infineon Technologies Description: LOW POWER ECONO AG-ECONO3-3
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 430 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 150 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
 Мінімальне замовлення: 6 шт
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FP150R07N3E4BOSA1 Infineon Technologies Infineon-FP150R07N3E4-DS-v02_00-en_de.pdf?fileId=db3a3043324cae8c013262b42be93951 Description: LOW POWER ECONO
Packaging: Bulk
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
2+11296.52 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
S70KS1281DPBHI020 S70KS1281DPBHI020 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 36 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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S70KS1281DPBHI023 S70KS1281DPBHI023 Infineon Technologies Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca Description: IC PSRAM 128MBIT PAR 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Access Time: 36 ns
Memory Interface: Parallel
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 166 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
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IPD020N03LF2SATMA1 IPD020N03LF2SATMA1 Infineon Technologies Infineon-IPD020N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b80943cf2a7a Description: IPD020N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+32.38 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IPD020N03LF2SATMA1 IPD020N03LF2SATMA1 Infineon Technologies Infineon-IPD020N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b80943cf2a7a Description: IPD020N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
на замовлення 2240 шт:
термін постачання 21-31 дні (днів)
3+117.27 грн
10+71.95 грн
100+48.28 грн
500+35.80 грн
1000+32.74 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
FF55MR12W1M1HB11BPSA1 FF55MR12W1M1HB11BPSA1 Infineon Technologies Infineon-FF55MR12W1M1H_B11-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018ba8c3b0a3719a Description: EASYDUAL MODULE WITH COOLSIC TRE
Packaging: Tray
Vgs(th) (Max) @ Id: 5.15V @ 6mA
FET Feature: Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+2699.58 грн
В кошику  од. на суму  грн.
CY15V104QN-20LPXI CY15V104QN-20LPXI Infineon Technologies Infineon-CY15B104QN_CY15V104QN_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7709b704a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Memory Interface: SPI
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.71V ~ 1.89V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 8-UQFN
Packaging: Tray
товару немає в наявності
 Мінімальне замовлення: 490 шт
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FF750R17ME7DPB11BPSA1 FF750R17ME7DPB11BPSA1 Infineon Technologies FF750R17ME7DPB11BPSA1.pdf Description: FF750R17ME7DPB11BPSA1
Input Capacitance (Cies) @ Vce: 78100 pF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 650 A
IGBT Type: Trench Field Stop
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 750A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+17457.17 грн
В кошику  од. на суму  грн.
WLC151568LDXSTXUMA1 WLC151568LDXSTXUMA1 Infineon Technologies Infineon-WLC1515_68LDXS-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c88231557018845155de97e1b Description: TYPE-C - EMERGING APP.
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
WLC151568LDXSXQMA1 WLC151568LDXSXQMA1 Infineon Technologies Infineon-WLC1515_68LDXS-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c88231557018845155de97e1b Description: TYPE-C - EMERGING APP.
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
 Мінімальне замовлення: 840 шт
В кошику  од. на суму  грн.
IPP023N03LF2SAKSA1 IPP023N03LF2SAKSA1 Infineon Technologies Infineon-IPP023N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cc55232b27 Description: MOSFET N-CH 30V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-U05
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 121A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
4+85.43 грн
10+65.21 грн
100+50.80 грн
500+38.81 грн
1000+31.81 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
CY8CLED16-48PVXI CY8CLED16-48PVXI Infineon Technologies CY8CLED16.pdf Description: IC MCU 8BIT 32KB FLASH 48SSOP
Supplier Device Package: 48-SSOP
Core Processor: M8C
Applications: HB LED Controller
Program Memory Type: FLASH (32kB)
Controller Series: CY8CLED
Voltage - Supply: 3V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I2C, SPI, UART/USART
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Number of I/O: 44
на замовлення 147 шт:
термін постачання 21-31 дні (днів)
1+1119.91 грн
10+856.01 грн
30+790.87 грн
120+687.64 грн
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IDWD40G120C5XKSA2 Infineon Technologies Description: SIC DISCRETE
Packaging: Tube
товару немає в наявності
 Мінімальне замовлення: 240 шт
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TLE92623BQXXUMA2 Infineon-TLE9262-3BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609785aa013951
TLE92623BQXXUMA2
Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2500+142.73 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IPT017N10NM5LF2ATMA1 infineon-ipt017n10nm5lf2-datasheet-en.pdf
IPT017N10NM5LF2ATMA1
Виробник: Infineon Technologies
Description: IPT017N10NM5LF2ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+227.05 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IPT017N10NM5LF2ATMA1 infineon-ipt017n10nm5lf2-datasheet-en.pdf
IPT017N10NM5LF2ATMA1
Виробник: Infineon Technologies
Description: IPT017N10NM5LF2ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
на замовлення 5487 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+565.39 грн
10+369.75 грн
100+270.96 грн
500+251.15 грн
В кошику  од. на суму  грн.
IR7304SPBF ir7304s.pdf?fileId=5546d462533600a4015355d62a63182e
IR7304SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 60mA, 130mA
Logic Voltage - VIL, VIH: 0.8V, 2.3V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 200ns, 100ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 700 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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CY9AFA41NAPMC-G-JNE2
CY9AFA41NAPMC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 96KB 100LQFP
Number of I/O: 83
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LCD, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, FIFO, I2C, UART/USART
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit
Data Converters: A/D 24x12b SAR
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: External, Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 96KB (96K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
CY7C1363C-133AXC Infineon-CY7C1361C_CY7C1363C_9-Mbit_(256_K_36_512_K_18)_Flow-Through_SRAM-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdc53d30a8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-fil
CY7C1363C-133AXC
Виробник: Infineon Technologies
Description: IC SRAM 9MBIT PARALLEL 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 9Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.135V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 133 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 6.5 ns
Memory Organization: 512K x 18
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 144 шт
В кошику  од. на суму  грн.
FF450R17ME4PBOSA1 Infineon-FF450R17ME4P-DS-v03_00-EN.pdf?fileId=5546d4625b3ca4ec015b3e41ca75068e
FF450R17ME4PBOSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 900A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 450A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 900 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 36 nF @ 25 V
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+12880.47 грн
В кошику  од. на суму  грн.
S26HL512TFPBHV010 Infineon-S26HS256T_S26HS512T_S26HS01GT_S26HL256T_S26HL512T_S26HL01GT_256Mb_512Mb_1Gb_SEMPER_TM_Flash_HYPERBUS_TM_interface_1-DataSheet-v67_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee6a0c96f54
S26HL512TFPBHV010
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 1.7ms
Memory Interface: HyperBus
Access Time: 6.5 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 338 шт
В кошику  од. на суму  грн.
CY8C3445AXI-104T download
CY8C3445AXI-104T
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 100TQFP
DigiKey Programmable: Not Verified
Number of I/O: 62
Supplier Device Package: 100-TQFP (14x14)
Peripherals: CapSense, DMA, POR, PWM, WDT
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Core Size: 8-Bit
Data Converters: A/D 16x12b; D/A 2x8b
Core Processor: 8051
EEPROM Size: 1K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 4K x 8
Program Memory Size: 32KB (32K x 8)
Speed: 50MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику  од. на суму  грн.
KITXMC71EVKLITEV1TOBO1 Infineon-KIT_XMC71_EVK_LITE_V1_XMC7100_Lite_Evaluation_Board_release_notes-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8c3de074018c7ec4575d0c6b
KITXMC71EVKLITEV1TOBO1
Виробник: Infineon Technologies
Description: XMC7100D EVAL BRD
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s)
Core Processor: ARM® Cortex®-M0+, Cortex®-M7
Utilized IC / Part: XMC7100D
на замовлення 18 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2197.10 грн
В кошику  од. на суму  грн.
EVALXMC4800PSOC6M5TOBO1 Infineon-UG-2023-07-EVAL-XMC4800PSOC6M5-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e12871028537c
EVALXMC4800PSOC6M5TOBO1
Виробник: Infineon Technologies
Description: XMC4800 EVAL BRD
Packaging: Bulk
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s)
Core Processor: ARM® Cortex®-M4
Utilized IC / Part: XMC4800
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+17434.65 грн
В кошику  од. на суму  грн.
IQD009N06NM5SCATMA1 Infineon-IQD009N06NM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b653e47149d2
IQD009N06NM5SCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
IQD009N06NM5SCATMA1 Infineon-IQD009N06NM5SC-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c919c9f9d0191b653e47149d2
IQD009N06NM5SCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 445A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 163µA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 30 V
на замовлення 4569 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+366.57 грн
10+234.31 грн
100+166.99 грн
500+138.98 грн
В кошику  од. на суму  грн.
IPA65R225C7XKSA1 Infineon-IPA65R225C7-DS-v02_00-en.pdf?fileId=db3a304343bec32d0143bf743f7c0c63
IPA65R225C7XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 7A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 225mOhm @ 4.8A, 10V
Power Dissipation (Max): 29W (Tc)
Vgs(th) (Max) @ Id: 4V @ 240µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 996 pF @ 400 V
на замовлення 419 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
251+89.41 грн
Мінімальне замовлення: 251 шт
В кошику  од. на суму  грн.
CYT2B75DADQ0AZEGSHQLA1
Виробник: Infineon Technologies
Description: IC MCU
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
IR21064PBF ir2106.pdf?fileId=5546d462533600a4015355c7cfc51673
IR21064PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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REFDR3KIMBGSIC2MATOBO1 Infineon-REF-DR3KIMBGSIC2MA-UserManual-v01_01-EN.pdf?fileId=8ac78c8c8eeb092c018f290cd8d6615c
REFDR3KIMBGSIC2MATOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 1ED3122MC12H
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 1ED3122MC12H, IMBG120R040M2H
Primary Attributes: Isolated
Secondary Attributes: On-Board Test Points
Embedded: No
товару немає в наявності
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S25FS128SAGBHM200 Infineon-S25FS128S_S25FS256S_1.8_V_Serial_Peripheral_Interface_with_Multi-I_O_MirrorBit(R)_Non-Volatile_Flash-DataSheet-v14_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ed6b5ab5758&utm_source=cypress&utm_medium=referral&utm_campaign
S25FS128SAGBHM200
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Memory Interface: SPI - Quad I/O, QPI
Grade: Automotive
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 338 шт
В кошику  од. на суму  грн.
CY8C4149LDSS593XQLA1 infineon-cy8c41xx-psoc-automotive-4100s-max-based-on-arm-cortex--m0-cpu-datasheet-en.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4149LDSS593XQLA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 384KB FLASH 48VFQFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 40
на замовлення 2597 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+650.82 грн
10+487.84 грн
25+453.21 грн
100+389.60 грн
260+371.92 грн
520+361.77 грн
1040+347.62 грн
В кошику  од. на суму  грн.
CY8C4147LDSS593XQLA1 infineon-cy8c41xx-psoc-automotive-4100s-max-based-on-arm-cortex--m0-cpu-datasheet-en.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4147LDSS593XQLA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 48VFQFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Grade: Automotive
Number of I/O: 40
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2600 шт
В кошику  од. на суму  грн.
CY8C4147AZSS595XQLA1 infineon-cy8c41xx-psoc-automotive-4100s-max-based-on-arm-cortex--m0-cpu-datasheet-en.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4147AZSS595XQLA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
CY8C4148LDSS593XQLA1 Infineon-CY8C4148AZS-S555-DataSheet-v05_00-EN.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4148LDSS593XQLA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 48VFQFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 40
товару немає в наявності
Мінімальне замовлення: 2600 шт
В кошику  од. на суму  грн.
CY8C4148AZSS595XQLA1 infineon-cy8c41xx-psoc-automotive-4100s-max-based-on-arm-cortex--m0-cpu-datasheet-en.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4148AZSS595XQLA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
CY8C4149AZSS595XQLA1 infineon-cy8c41xx-psoc-automotive-4100s-max-based-on-arm-cortex--m0-cpu-datasheet-en.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4149AZSS595XQLA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 384KB FLASH 64LQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1600 шт
В кошику  од. на суму  грн.
CY8C4148AZSS598XQLA1 infineon-cy8c41xx-psoc-automotive-4100s-max-based-on-arm-cortex--m0-cpu-datasheet-en.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4148AZSS598XQLA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 84
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
CY8C4149AZSS598XQLA1 infineon-cy8c41xx-psoc-automotive-4100s-max-based-on-arm-cortex--m0-cpu-datasheet-en.pdf?fileId=8ac78c8c8929aa4d018a21719a00247e
CY8C4149AZSS598XQLA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 384KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 384KB (384K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, I2S, DMA, LCD, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 100-TQFP (14x14)
Grade: Automotive
Number of I/O: 84
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 900 шт
В кошику  од. на суму  грн.
CY8C20111-SX1I
CY8C20111-SX1I
Виробник: Infineon Technologies
Description: IC CAPSENSE EXP 8-SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Interface: I2C
Type: Buttons
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Current - Supply: 1.5mA
Number of Inputs: Up to 1
Supplier Device Package: 8-SOIC
Proximity Detection: No
LED Driver Channels: Up to 1
DigiKey Programmable: Not Verified
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S27KL0641DABHI020 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S27KL0641DABHI020
Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S27KS0641DPBHV020 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S27KS0641DPBHV020
Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT PARALLEL 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 40 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
на замовлення 144 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+303.66 грн
10+272.67 грн
25+264.54 грн
50+242.47 грн
100+236.71 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
S6J326CKSPSE20000 Infineon-S6J3200_Series_32-bit_Microcontroller_TRAVEO_T1G_Family-AdditionalTechnicalInformation-v18_00-EN.PDF?fileId=8ac78c8c7d0d8da4017d0ee0c1436670&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_int
S6J326CKSPSE20000
Виробник: Infineon Technologies
Description: IC MCU 32BIT 2.0625MB 208TEQFP
DigiKey Programmable: Not Verified
Number of I/O: 120
Supplier Device Package: 208-TEQFP (28x28)
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 46x12b
Core Processor: Arm® Cortex®-R5F
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 256K x 8
Program Memory Size: 2.0625MB (2.0625M x 8)
Speed: 240MHz
Mounting Type: Surface Mount
Package / Case: 208-LQFP Exposed Pad
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 360 шт
В кошику  од. на суму  грн.
AUIRFP4004 auirfp4004.pdf?fileId=5546d462533600a4015355b1b7a51450
AUIRFP4004
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 330 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8920 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IR21814STRPBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR21814STRPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 3390 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+187.95 грн
10+134.84 грн
25+123.34 грн
100+103.85 грн
250+98.18 грн
500+96.04 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IMZA75R090M1HXKSA1 Infineon-IMZA75R140M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dcbd2f131495c
IMZA75R090M1HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
Rds On (Max) @ Id, Vgs: 83mOhm @ 7.4A, 20V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.6mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 542 pF @ 500 V
на замовлення 208 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+456.66 грн
30+253.03 грн
120+211.87 грн
В кошику  од. на суму  грн.
IMT40R025M2HXTMA1 Infineon-IMT40R025M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51
IMT40R025M2HXTMA1
Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+311.18 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IMT40R025M2HXTMA1 Infineon-IMT40R025M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51
IMT40R025M2HXTMA1
Виробник: Infineon Technologies
Description: SIC-MOS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
на замовлення 2019 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+724.60 грн
10+480.21 грн
100+366.79 грн
В кошику  од. на суму  грн.
IMZA75R060M1HXKSA1 Infineon-IMZA75R060M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dcbc1100b493c
IMZA75R060M1HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 11.1A, 20V
Power Dissipation (Max): 144W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 779 pF @ 500 V
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+573.93 грн
30+323.55 грн
120+273.30 грн
В кошику  од. на суму  грн.
IMZA75R040M1HXKSA1 Infineon-IMZA75R040M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6f5b54e0f1a
IMZA75R040M1HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tj)
Rds On (Max) @ Id, Vgs: 37mOhm @ 16.6A, 20V
Power Dissipation (Max): 185W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 6mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 500 V
на замовлення 212 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+678.78 грн
30+388.54 грн
120+330.33 грн
В кошику  од. на суму  грн.
IMBG40R011M2HXTMA1 Infineon-IMBG40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f57b81694323d
IMBG40R011M2HXTMA1
Виробник: Infineon Technologies
Description: SIC-MOS
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: PG-TO263-7-11
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 133A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IMBG40R011M2HXTMA1 Infineon-IMBG40R011M2H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8eeb092c018f57b81694323d
IMBG40R011M2HXTMA1
Виробник: Infineon Technologies
Description: SIC-MOS
Input Capacitance (Ciss) (Max) @ Vds: 3770 pF @ 200 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): +23V, -7V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: PG-TO263-7-11
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Power Dissipation (Max): 3.8W (Ta), 429W (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Current - Continuous Drain (Id) @ 25°C: 13.4A (Ta), 133A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
на замовлення 728 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1038.36 грн
10+734.63 грн
100+716.57 грн
В кошику  од. на суму  грн.
IMZA75R020M1HXKSA1 Infineon-IMZA75R020M1H-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018dc6da53810eef
IMZA75R020M1HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
Rds On (Max) @ Id, Vgs: 18mOhm @ 32.5A, 20V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 11.7mA
Supplier Device Package: PG-TO247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2217 pF @ 500 V
на замовлення 160 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1066.32 грн
30+634.09 грн
120+566.22 грн
В кошику  од. на суму  грн.
IMZA75R008M1HXKSA1 Infineon-IMZA75R008M1H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c919c9f9d0191b2c95e1e0eb6
IMZA75R008M1HXKSA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 163A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 90.3A, 20V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 32.4mA
Supplier Device Package: PG-TO247-4-U02
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 500 V
Input Capacitance (Ciss) (Max) @ Vds: 6137 pF @ 500 V
товару немає в наявності
В кошику  од. на суму  грн.
EVALXDP710V2TOBO1 Infineon-Evaluation_board_XDP710_2307_PL88_2308_013018-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8929aa4d018a3c31c9195aa1
EVALXDP710V2TOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR XDP710
Embedded: No
Utilized IC / Part: XDP710
Contents: Board(s)
Type: Interface
Function: PMBus
Packaging: Bulk
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+23794.50 грн
В кошику  од. на суму  грн.
ISCH42N04LM7ATMA1 Infineon-ISCH42N04LM7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fdd66f1e27566
ISCH42N04LM7ATMA1
Виробник: Infineon Technologies
Description: ISCH42N04LM7ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 1.8V @ 130µA
Power Dissipation (Max): 3W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
ISCH42N04LM7ATMA1 Infineon-ISCH42N04LM7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fdd66f1e27566
ISCH42N04LM7ATMA1
Виробник: Infineon Technologies
Description: ISCH42N04LM7ATMA1
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 207 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TDSON-8
Vgs(th) (Max) @ Id: 1.8V @ 130µA
Power Dissipation (Max): 3W (Ta), 234W (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 61A (Ta), 541A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
F3L500R12W3H7H20BPSA1
F3L500R12W3H7H20BPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1200V 315A
Packaging: Tray
Input Capacitance (Cies) @ Vce: 57900 pF @ 25 V
Current - Collector Cutoff (Max): 29 µA
Power - Max: 20 mW
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 315 A
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.23V @ 15V, 500A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Three Level Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
на замовлення 13 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+6639.44 грн
В кошику  од. на суму  грн.
FP150R07N3E4PB11BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3-3
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 430 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 150 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
на замовлення 45 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+8174.07 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
FP150R07N3E4PB11BPSA1
Виробник: Infineon Technologies
Description: LOW POWER ECONO AG-ECONO3-3
Input Capacitance (Cies) @ Vce: 9.3 nF @ 25 V
Current - Collector Cutoff (Max): 1 mA
Power - Max: 430 W
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 150 A
IGBT Type: Trench Field Stop
Supplier Device Package: AG-ECONO3
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Three Phase Inverter
Input: Three Phase Bridge Rectifier
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
FP150R07N3E4BOSA1 Infineon-FP150R07N3E4-DS-v02_00-en_de.pdf?fileId=db3a3043324cae8c013262b42be93951
Виробник: Infineon Technologies
Description: LOW POWER ECONO
Packaging: Bulk
на замовлення 17 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2+11296.52 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
S70KS1281DPBHI020 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S70KS1281DPBHI020
Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT PAR 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: Parallel
Access Time: 36 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S70KS1281DPBHI023 Infineon-S27KL0641_S27KS0641_S70KL1281_S70KS1281_3.0_V_1.8_V_64_Mb_(8_MB)_128_Mb_(16_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed18c684db5&utm_source=cypress&utm_medium=referral&utm_ca
S70KS1281DPBHI023
Виробник: Infineon Technologies
Description: IC PSRAM 128MBIT PAR 24FBGA
DigiKey Programmable: Not Verified
Memory Organization: 16M x 8
Access Time: 36 ns
Memory Interface: Parallel
Supplier Device Package: 24-FBGA (6x8)
Memory Format: PSRAM
Clock Frequency: 166 MHz
Technology: PSRAM (Pseudo SRAM)
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 128Mbit
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Packaging: Tape & Reel (TR)
товару немає в наявності
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IPD020N03LF2SATMA1 Infineon-IPD020N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b80943cf2a7a
IPD020N03LF2SATMA1
Виробник: Infineon Technologies
Description: IPD020N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
2000+32.38 грн
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IPD020N03LF2SATMA1 Infineon-IPD020N03LF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b80943cf2a7a
IPD020N03LF2SATMA1
Виробник: Infineon Technologies
Description: IPD020N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.05mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
на замовлення 2240 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
3+117.27 грн
10+71.95 грн
100+48.28 грн
500+35.80 грн
1000+32.74 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
FF55MR12W1M1HB11BPSA1 Infineon-FF55MR12W1M1H_B11-DataSheet-v00_20-EN.pdf?fileId=8ac78c8c8b6555fe018ba8c3b0a3719a
FF55MR12W1M1HB11BPSA1
Виробник: Infineon Technologies
Description: EASYDUAL MODULE WITH COOLSIC TRE
Packaging: Tray
Vgs(th) (Max) @ Id: 5.15V @ 6mA
FET Feature: Silicon Carbide (SiC)
Gate Charge (Qg) (Max) @ Vgs: 45nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 800V
Current - Continuous Drain (Id) @ 25°C: 15A (Tj)
Technology: Silicon Carbide (SiC)
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Chassis Mount
Package / Case: Module
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+2699.58 грн
В кошику  од. на суму  грн.
CY15V104QN-20LPXI Infineon-CY15B104QN_CY15V104QN_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7709b704a&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integr
CY15V104QN-20LPXI
Виробник: Infineon Technologies
Description: IC FRAM 4MBIT SPI 20MHZ 8GQFN
DigiKey Programmable: Not Verified
Memory Organization: 512K x 8
Memory Interface: SPI
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.71V ~ 1.89V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Mbit
Mounting Type: Surface Mount
Package / Case: 8-UQFN
Packaging: Tray
товару немає в наявності
Мінімальне замовлення: 490 шт
В кошику  од. на суму  грн.
FF750R17ME7DPB11BPSA1 FF750R17ME7DPB11BPSA1.pdf
FF750R17ME7DPB11BPSA1
Виробник: Infineon Technologies
Description: FF750R17ME7DPB11BPSA1
Input Capacitance (Cies) @ Vce: 78100 pF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 650 A
IGBT Type: Trench Field Stop
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 750A
Operating Temperature: -40°C ~ 175°C (TJ)
Configuration: Half Bridge Inverter
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Box
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+17457.17 грн
В кошику  од. на суму  грн.
WLC151568LDXSTXUMA1 Infineon-WLC1515_68LDXS-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c88231557018845155de97e1b
WLC151568LDXSTXUMA1
Виробник: Infineon Technologies
Description: TYPE-C - EMERGING APP.
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
WLC151568LDXSXQMA1 Infineon-WLC1515_68LDXS-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c88231557018845155de97e1b
WLC151568LDXSXQMA1
Виробник: Infineon Technologies
Description: TYPE-C - EMERGING APP.
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 24V
Applications: Wireless Power Transmitter
Current - Supply: 85mA
Supplier Device Package: 68-QFN (10x10)
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 840 шт
В кошику  од. на суму  грн.
IPP023N03LF2SAKSA1 Infineon-IPP023N03LF2S-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d1019030cc55232b27
IPP023N03LF2SAKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 75A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-TO220-3-U05
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 121A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
4+85.43 грн
10+65.21 грн
100+50.80 грн
500+38.81 грн
1000+31.81 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
CY8CLED16-48PVXI CY8CLED16.pdf
CY8CLED16-48PVXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 32KB FLASH 48SSOP
Supplier Device Package: 48-SSOP
Core Processor: M8C
Applications: HB LED Controller
Program Memory Type: FLASH (32kB)
Controller Series: CY8CLED
Voltage - Supply: 3V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
RAM Size: 2K x 8
Interface: I2C, SPI, UART/USART
Mounting Type: Surface Mount
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Number of I/O: 44
на замовлення 147 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна без ПДВ
1+1119.91 грн
10+856.01 грн
30+790.87 грн
120+687.64 грн
В кошику  од. на суму  грн.
IDWD40G120C5XKSA2
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
товару немає в наявності
Мінімальне замовлення: 240 шт
В кошику  од. на суму  грн.
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