Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126715) > Сторінка 736 з 2112
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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SI4435DY | Infineon Technologies |
Description: MOSFET P-CH 30V 8A 8SOPackaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 95 шт В кошику од. на суму грн. | ||||||||||||||||
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BCM856SH6327XTSA1 | Infineon Technologies |
Description: TRANS 2PNP 65V 0.1A PG-SOT363-POSupplier Device Package: PG-SOT363-PO Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (Max): 65V Current - Collector (Ic) (Max): 100mA Power - Max: 250mW Operating Temperature: 150°C (TJ) Transistor Type: 2 PNP (Dual) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
на замовлення 71630 шт: термін постачання 21-31 дні (днів) |
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CY8C4248LQI-BL583T | Infineon Technologies |
Description: IC MCU 32BIT 256KB FLASH 56QFNPackaging: Cut Tape (CT) Package / Case: 56-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 256KB (256K x 8) RAM Size: 32K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 16x12b SAR; D/A 2xIDAC Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT Supplier Device Package: 56-QFN (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
на замовлення 3999 шт: термін постачання 21-31 дні (днів) |
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CY7C68033-56LFXC | Infineon Technologies |
Description: IC USB NX2LP NAND CNTRLR 56VQFNPackaging: Bag Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Controller Type: NAND Flash - USB Supplier Device Package: 56-QFN (8x8) |
товару немає в наявності |
Мінімальне замовлення: 260 шт В кошику од. на суму грн. | ||||||||||||||||
| CY7C68014A-56LFXC | Infineon Technologies |
Description: IC MCU USB PERIPH HI SPD 56VQFNDigiKey Programmable: Not Verified Number of I/O: 24 Supplier Device Package: 56-QFN (8x8) Core Processor: 8051 Applications: USB Microcontroller Program Memory Type: ROMless Controller Series: CY7C680xx Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C RAM Size: 16K x 8 Interface: I2C, USB, USART Mounting Type: Surface Mount Package / Case: 56-VFQFN Exposed Pad Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CY7C68014A-56BAXC | Infineon Technologies |
Description: IC MCU USB PERIPH HI SPD 56VFBGADigiKey Programmable: Not Verified Number of I/O: 24 Supplier Device Package: 56-VFBGA (5x5) Core Processor: 8051 Applications: USB Microcontroller Program Memory Type: ROMless Controller Series: CY7C680xx Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C RAM Size: 16K x 8 Interface: I2C, USB, USART Mounting Type: Surface Mount Package / Case: 56-VFBGA Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| TTB6C95N12LOF_B1 | Infineon Technologies |
Description: BRIDGE RECTIFIER & AC-SWITCHESPackaging: Bulk |
на замовлення 206 шт: термін постачання 21-31 дні (днів) |
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TTB6C135N16LOFHOSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 100A MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Bridge, 3-Phase - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A @ 50Hz Number of SCRs, Diodes: 6 SCRs Current - On State (It (AV)) (Max): 173 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 100 A Voltage - Off State: 1.6 kV |
на замовлення 287 шт: термін постачання 21-31 дні (днів) |
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TTB6C135N16LOFHOSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 100A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Bridge, 3-Phase - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A @ 50Hz Number of SCRs, Diodes: 6 SCRs Current - On State (It (AV)) (Max): 173 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 100 A Voltage - Off State: 1.6 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TTB6C165N16LOFHOSA1 | Infineon Technologies |
Description: SCR MODULE 1.6KV 120A MODULEPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 125°C Structure: Bridge, 3-Phase - All SCRs Current - Hold (Ih) (Max): 200 mA Current - Gate Trigger (Igt) (Max): 150 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 1250A @ 50Hz Number of SCRs, Diodes: 6 SCRs Current - On State (It (AV)) (Max): 208 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 120 A Voltage - Off State: 1.6 kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE4959CFXHAMA1 | Infineon Technologies |
Description: SENSOR ROTARY PC PINPackaging: Bulk Package / Case: 3-SIP Module Mounting Type: Through Hole Output: Analog Voltage, PWM Operating Temperature: -40°C ~ 175°C (TJ) Termination Style: PC Pin Voltage - Supply: 4V ~ 16V Actuator Type: External Magnet, Not Included Technology: Hall Effect For Measuring: Linear, Rotary Position Supplier Device Package: PG-SSO-3-52 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 70180 шт: термін постачання 21-31 дні (днів) |
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TLE49SRP3XTMA1 | Infineon Technologies |
Description: TLE49SRP3XTMA1Packaging: Tape & Reel (TR) Package / Case: 3-SIP Module, Formed Leads Mounting Type: Through Hole Output: PWM, SENT Operating Temperature: -40°C ~ 150°C Termination Style: PC Pin Voltage - Supply: 4.5V ~ 5.5V Actuator Type: External Magnet, Not Included Technology: Magnetoresistive For Measuring: Angle, Rotary Position Supplier Device Package: PG-SSO-3-41 Rotation Angle - Electrical, Mechanical: 0° ~ 360° Output Signal: Clockwise Increase Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 2000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLE49SRP3XTMA1 | Infineon Technologies |
Description: TLE49SRP3XTMA1Grade: Automotive Output Signal: Clockwise Increase Rotation Angle - Electrical, Mechanical: 0° ~ 360° Supplier Device Package: PG-SSO-3-41 For Measuring: Angle, Rotary Position Technology: Magnetoresistive Actuator Type: External Magnet, Not Included Voltage - Supply: 4.5V ~ 5.5V Termination Style: PC Pin Operating Temperature: -40°C ~ 150°C Output: PWM, SENT Mounting Type: Through Hole Package / Case: 3-SIP Module, Formed Leads Packaging: Cut Tape (CT) Qualification: AEC-Q100 |
на замовлення 1998 шт: термін постачання 21-31 дні (днів) |
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CY7C1347G-166AXC | Infineon Technologies |
Description: IC SRAM 4.5MBIT PAR 100TQFPPackaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Memory Size: 4.5Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3.15V ~ 3.6V Technology: SRAM - Synchronous, SDR Clock Frequency: 166 MHz Memory Format: SRAM Supplier Device Package: 100-TQFP (14x20) Memory Interface: Parallel Access Time: 3.5 ns Memory Organization: 128K x 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 72 шт В кошику од. на суму грн. | ||||||||||||||||
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CYW55571MIUBGT | Infineon Technologies |
Description: WI-FI COMBO IOTPackaging: Tape & Reel (TR) Package / Case: 225-BGA, WLBGA Mounting Type: Surface Mount Frequency: 2.4GHz, 5GHz, 6GHz Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 4.8V Power - Output: 20dBm Protocol: 802.11ax, Bluetooth v5.2 Data Rate (Max): 1.2Gbps Supplier Device Package: SG-UFWLB-225 Modulation: 1024-QAM, OFDM RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2S, PCIe, PCM, SDIO, UART |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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CYW55573MIUBGT | Infineon Technologies |
Description: WI-FI COMBO IOT Packaging: Tape & Reel (TR) Package / Case: 225-BGA, WLBGA Mounting Type: Surface Mount Frequency: 2.4GHz, 5GHz, 6GHz Type: TxRx + MCU Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 4.8V Power - Output: 20dBm Protocol: 802.11ax, Bluetooth v5.2 Data Rate (Max): 1.2Gbps Supplier Device Package: SG-UFWLB-225 Modulation: 1024-QAM, OFDM RF Family/Standard: Bluetooth, WiFi Serial Interfaces: I2S, PCIe, PCM, SDIO, UART |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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CY39200V208-125NTC | Infineon Technologies |
Description: IC CPLD 3072MC 10NS 208QFP DigiKey Programmable: Not Verified Number of I/O: 136 Voltage Supply - Internal: 2.5V, 3.3V Supplier Device Package: 208-PQFP (28x28) Delay Time tpd(1) Max: 10 ns Operating Temperature: 0°C ~ 70°C (TA) Number of Macrocells: 3072 Number of Gates: 288000 Programmable Type: In-System Reprogrammable™ (ISR™) Flash Mounting Type: Surface Mount Package / Case: 208-BFQFP Packaging: Bag |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| CY39200V388-125MGC | Infineon Technologies |
Description: IC CPLD 3072MC 10NS 388BGA DigiKey Programmable: Not Verified Number of I/O: 294 Voltage Supply - Internal: 2.5V, 3.3V Supplier Device Package: 388-BGA (35x35) Delay Time tpd(1) Max: 10 ns Operating Temperature: 0°C ~ 70°C (TA) Number of Macrocells: 3072 Number of Gates: 288000 Programmable Type: In-System Reprogrammable™ (ISR™) Flash Mounting Type: Surface Mount Package / Case: 388-BBGA Packaging: Bag |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IS26KS512S-DPBLA200 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGA Packaging: Bulk Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: HyperFlash Clock Frequency: 166 MHz Memory Format: FLASH Supplier Device Package: 24-VFBGA (6x8) Memory Interface: HyperBus Access Time: 96 ns Memory Organization: 64M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| IS26KS256S-DPBLA200-TR | Infineon Technologies |
Description: IC FLASH 256MBIT HYPERBUS Packaging: Bulk Memory Size: 256Mbit Memory Format: FLASH Memory Interface: HyperBus Memory Organization: 32M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CY8C6148LQI-S2F02 | Infineon Technologies |
Description: IC MCU 32BIT 1MB FLASH 68QFNPackaging: Tray Package / Case: 68-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 100MHz, 150MHz Program Memory Size: 1MB (1M x 8) RAM Size: 512K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b Core Size: 32-Bit Dual-Core Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT Supplier Device Package: 68-QFN (8x8) Number of I/O: 53 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 520 шт В кошику од. на суму грн. | ||||||||||||||||
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IR3513ZMTRPBF | Infineon Technologies |
Description: IC CTRL XPHASE3 POL 32-MLPQSupplier Device Package: 32-MLPQ (5x5) Current - Supply: 3mA Applications: Processor Voltage - Supply: 8V ~ 16V Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Packaging: Bulk |
на замовлення 150 шт: термін постачання 21-31 дні (днів) |
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IR3505ZMTRPBF | Infineon Technologies |
Description: IC XPHASE3 CTLR 2.5A 16-MLPQSupplier Device Package: 16-MLPQ (3x3) Current - Supply: 3mA Applications: Processor Voltage - Supply: 8V ~ 16V Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR3505ZMTRPBF | Infineon Technologies |
Description: IC XPHASE3 CTLR 2.5A 16-MLPQSupplier Device Package: 16-MLPQ (3x3) Current - Supply: 3mA Applications: Processor Voltage - Supply: 8V ~ 16V Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: 16-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR3505ZMTRPBF | Infineon Technologies |
Description: IC XPHASE3 CTLR 2.5A 16-MLPQPackage / Case: 16-VFQFN Exposed Pad Packaging: Bulk Supplier Device Package: 16-MLPQ (3x3) Current - Supply: 3mA Applications: Processor Voltage - Supply: 8V ~ 16V Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount |
на замовлення 1324 шт: термін постачання 21-31 дні (днів) |
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IR3508ZMTRPBF | Infineon Technologies |
Description: IC CTRL XPHASE3 20-MLPQSupplier Device Package: 20-MLPQ (4x4) Current - Supply: 4mA Applications: Processor Voltage - Supply: 8V ~ 28V Operating Temperature: 0°C ~ 125°C Mounting Type: Surface Mount Package / Case: 20-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR3500VMTRPBF | Infineon Technologies |
Description: IC XPHASE3 CTLR VR11.1 32-MLPQSupplier Device Package: 32-MLPQ (5x5) Current - Supply: 6.5mA Applications: Processor Voltage - Supply: 4.75V ~ 7.5V Operating Temperature: 0°C ~ 100°C Mounting Type: Surface Mount Package / Case: 32-VFQFN Exposed Pad Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR3500VMTRPBF | Infineon Technologies |
Description: IC XPHASE3 CTLR VR11.1 32-MLPQPackage / Case: 32-VFQFN Exposed Pad Packaging: Cut Tape (CT) Supplier Device Package: 32-MLPQ (5x5) Current - Supply: 6.5mA Applications: Processor Voltage - Supply: 4.75V ~ 7.5V Operating Temperature: 0°C ~ 100°C Mounting Type: Surface Mount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPQC60T010S7AXTMA1 | Infineon Technologies |
Description: AUTOMOTIVE_COOLMOSPackaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.06mA Supplier Device Package: PG-HDSOP-22-101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V Qualification: AEC-Q101 |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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IPQC60T010S7AXTMA1 | Infineon Technologies |
Description: AUTOMOTIVE_COOLMOSPackaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 174A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.06mA Supplier Device Package: PG-HDSOP-22-101 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V Qualification: AEC-Q101 |
на замовлення 750 шт: термін постачання 21-31 дні (днів) |
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TLE493DP3XXMS2GOTOBO1 | Infineon Technologies |
Description: TLE493DP3XXMS2GOTOBO1Packaging: Box Interface: I2C, SPI Contents: Board(s) Sensor Type: Magnetic, Hall Effect Utilized IC / Part: TLE493D-P3B6, TLE493D-P3I8 Embedded: Yes, MCU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE493DP3I8XTMA1 | Infineon Technologies |
Description: SEN HALL EFFECT SPI PG-VSON-8-2Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: 8-VDFN Exposed Pad Output Type: SPI Mounting Type: Surface Mount, Wettable Flank Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.9V ~ 3.5V Technology: Hall Effect Resolution: 12 b Sensing Range: ±60mT Current - Supply (Max): 3.3mA Supplier Device Package: PG-VSON-8-2 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLE493DP3I8XTMA1 | Infineon Technologies |
Description: SEN HALL EFFECT SPI PG-VSON-8-2Features: Temperature Compensated Packaging: Cut Tape (CT) Package / Case: 8-VDFN Exposed Pad Output Type: SPI Mounting Type: Surface Mount, Wettable Flank Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.9V ~ 3.5V Technology: Hall Effect Resolution: 12 b Sensing Range: ±60mT Current - Supply (Max): 3.3mA Supplier Device Package: PG-VSON-8-2 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 4469 шт: термін постачання 21-31 дні (днів) |
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TLE493DW3B6B0HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 5.5V Technology: Hall Effect Resolution: 14 b Sensing Range: ±160mT Current - Supply (Max): 6mA Supplier Device Package: PG-TSOP6-6-8 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLE493DW3B6B2HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 5.5V Technology: Hall Effect Resolution: 14 b Sensing Range: ±160mT Current - Supply (Max): 6mA Supplier Device Package: PG-TSOP6-6-8 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLE493DW3B6B3HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 5.5V Technology: Hall Effect Resolution: 14 b Sensing Range: ±160mT Current - Supply (Max): 6mA Supplier Device Package: PG-TSOP6-6-8 Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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TLE493DW3B6B1HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 5.5V Technology: Hall Effect Resolution: 14 b Sensing Range: ±160mT Current - Supply (Max): 6mA Supplier Device Package: PG-TSOP6-6-8 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLE493DP3B6A0HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT I2C TSOT-23-6Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 5.5V Technology: Hall Effect Resolution: 14 b Sensing Range: ±160mT Current - Supply (Max): 6mA Supplier Device Package: PG-TSOP6-6-8 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLE493DP3B6A3HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT SPI PG-TSOP6-6-8Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 5.5V Technology: Hall Effect Resolution: 14 b Sensing Range: ±160mT Current - Supply (Max): 6mA Supplier Device Package: PG-TSOP6-6-8 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLE493DP3B6A1HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT SPI PG-TSOP6-6-8Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 5.5V Technology: Hall Effect Resolution: 14 b Sensing Range: ±160mT Current - Supply (Max): 6mA Supplier Device Package: PG-TSOP6-6-8 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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TLE493DP3B6A2HTSA1 | Infineon Technologies |
Description: SEN HALL EFFECT SPI PG-TSOP6-6-8Features: Temperature Compensated Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Output Type: I2C Mounting Type: Surface Mount Axis: X, Y, Z Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 2.8V ~ 5.5V Technology: Hall Effect Resolution: 14 b Sensing Range: ±160mT Current - Supply (Max): 6mA Supplier Device Package: PG-TSOP6-6-8 Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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ISC052N03LF2SATMA1 | Infineon Technologies |
Description: ISC052N03LF2SATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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ISC052N03LF2SATMA1 | Infineon Technologies |
Description: ISC052N03LF2SATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V Power Dissipation (Max): 3W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISC033N03LF2SATMA1 | Infineon Technologies |
Description: ISC033N03LF2SATMA1Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ISC033N03LF2SATMA1 | Infineon Technologies |
Description: ISC033N03LF2SATMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V Power Dissipation (Max): 3W (Ta), 71W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ISC028N03LF2SATMA1 | Infineon Technologies |
Description: ISC028N03LF2SATMA1 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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ISC028N03LF2SATMA1 | Infineon Technologies |
Description: ISC028N03LF2SATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 30µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISC023N03LF2SATMA1 | Infineon Technologies |
Description: ISC023N03LF2SATMA1Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 40µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ISC023N03LF2SATMA1 | Infineon Technologies |
Description: ISC023N03LF2SATMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 40µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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ISC012N03LF2SATMA1 | Infineon Technologies |
Description: ISC012N03LF2SATMA1Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 80µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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ISC012N03LF2SATMA1 | Infineon Technologies |
Description: ISC012N03LF2SATMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc) Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 80µA Supplier Device Package: PG-TDSON-8-62 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V |
на замовлення 2090 шт: термін постачання 21-31 дні (днів) |
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IPD023N03LF2SATMA1 | Infineon Technologies |
Description: IPD023N03LF2SATMA1Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V Power Dissipation (Max): 3W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 60µA Supplier Device Package: PG-TO252-3-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IPD023N03LF2SATMA1 | Infineon Technologies |
Description: IPD023N03LF2SATMA1Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc) Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V Power Dissipation (Max): 3W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 60µA Supplier Device Package: PG-TO252-3-34 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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ICE5QR2280BG1XUMA1 | Infineon Technologies |
Description: ICE5QR2280BG1XUMA1Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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ICE5QR2280BG1XUMA1 | Infineon Technologies |
Description: ICE5QR2280BG1XUMA1Packaging: Cut Tape (CT) |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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IPP030N10NF2SAKMA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 179A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V Power Dissipation (Max): 3.8W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 140µA Supplier Device Package: PG-TO220-3-U05 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V |
на замовлення 730 шт: термін постачання 21-31 дні (днів) |
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BGSX24M2U16E6327XTSA1 | Infineon Technologies |
Description: ANTENNA DEVICESFeatures: DC Blocked Packaging: Cut Tape (CT) Package / Case: 16-UFLGA Exposed Pad Impedance: 50Ohm Mounting Type: Surface Mount Circuit: DP4T RF Type: 5G, LTE Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.1V ~ 1.3V, 1.65V ~ 1.95V Insertion Loss: 1.14dB Frequency Range: 400MHz ~ 7.125GHz Topology: Absorptive Test Frequency: 7.125GHz Isolation: 35dB Supplier Device Package: PG-ULGA-16-6 |
на замовлення 3462 шт: термін постачання 21-31 дні (днів) |
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EVALMA5342MS200WX2TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR MA5342Packaging: Box Output Type: 2-Channel (Stereo) Amplifier Type: Class D Contents: Board(s) Voltage - Supply: ±30V ~ 60V Max Output Power x Channels @ Load: 200W x 2 @ 8Ohm Utilized IC / Part: MA5342 |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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EVALMA5302MS200WX2TOBO1 | Infineon Technologies |
Description: EVAL BOARD FOR MA5302Packaging: Box Output Type: 2-Channel (Stereo) Amplifier Type: Class D Contents: Board(s) Voltage - Supply: ±17V ~ 32V Max Output Power x Channels @ Load: 200W x 2 @ 2Ohm Utilized IC / Part: MA5302 |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IGB070S10S1XTMA1 | Infineon Technologies |
Description: GANFET N-CH 100V 13A 4TDFNPackaging: Tube Package / Case: 4-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V Power Dissipation (Max): 3.3W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 8mA Supplier Device Package: PG-TSON-4-2 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±6.5V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| SI4435DY |
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Виробник: Infineon Technologies
Description: MOSFET P-CH 30V 8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V
Description: MOSFET P-CH 30V 8A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 95 шт
В кошику
од. на суму грн.
| BCM856SH6327XTSA1 |
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Виробник: Infineon Technologies
Description: TRANS 2PNP 65V 0.1A PG-SOT363-PO
Supplier Device Package: PG-SOT363-PO
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: TRANS 2PNP 65V 0.1A PG-SOT363-PO
Supplier Device Package: PG-SOT363-PO
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Current - Collector (Ic) (Max): 100mA
Power - Max: 250mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
на замовлення 71630 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 33.30 грн |
| 16+ | 19.55 грн |
| 100+ | 12.32 грн |
| 500+ | 8.63 грн |
| 1000+ | 7.69 грн |
| CY8C4248LQI-BL583T |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
на замовлення 3999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 537.61 грн |
| 10+ | 400.64 грн |
| 25+ | 371.46 грн |
| 100+ | 318.50 грн |
| 250+ | 304.15 грн |
| 500+ | 295.51 грн |
| 1000+ | 283.66 грн |
| CY7C68033-56LFXC |
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Виробник: Infineon Technologies
Description: IC USB NX2LP NAND CNTRLR 56VQFN
Packaging: Bag
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Type: NAND Flash - USB
Supplier Device Package: 56-QFN (8x8)
Description: IC USB NX2LP NAND CNTRLR 56VQFN
Packaging: Bag
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Controller Type: NAND Flash - USB
Supplier Device Package: 56-QFN (8x8)
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Мінімальне замовлення: 260 шт
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| CY7C68014A-56LFXC |
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Виробник: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 56VQFN
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 56-QFN (8x8)
Core Processor: 8051
Applications: USB Microcontroller
Program Memory Type: ROMless
Controller Series: CY7C680xx
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
RAM Size: 16K x 8
Interface: I2C, USB, USART
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tray
Description: IC MCU USB PERIPH HI SPD 56VQFN
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 56-QFN (8x8)
Core Processor: 8051
Applications: USB Microcontroller
Program Memory Type: ROMless
Controller Series: CY7C680xx
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
RAM Size: 16K x 8
Interface: I2C, USB, USART
Mounting Type: Surface Mount
Package / Case: 56-VFQFN Exposed Pad
Packaging: Tray
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| CY7C68014A-56BAXC |
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Виробник: Infineon Technologies
Description: IC MCU USB PERIPH HI SPD 56VFBGA
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 56-VFBGA (5x5)
Core Processor: 8051
Applications: USB Microcontroller
Program Memory Type: ROMless
Controller Series: CY7C680xx
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
RAM Size: 16K x 8
Interface: I2C, USB, USART
Mounting Type: Surface Mount
Package / Case: 56-VFBGA
Packaging: Tray
Description: IC MCU USB PERIPH HI SPD 56VFBGA
DigiKey Programmable: Not Verified
Number of I/O: 24
Supplier Device Package: 56-VFBGA (5x5)
Core Processor: 8051
Applications: USB Microcontroller
Program Memory Type: ROMless
Controller Series: CY7C680xx
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
RAM Size: 16K x 8
Interface: I2C, USB, USART
Mounting Type: Surface Mount
Package / Case: 56-VFBGA
Packaging: Tray
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| TTB6C95N12LOF_B1 |
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на замовлення 206 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 10811.19 грн |
| TTB6C135N16LOFHOSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 100A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 173 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 100 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 100A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 173 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 100 A
Voltage - Off State: 1.6 kV
на замовлення 287 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 16795.82 грн |
| TTB6C135N16LOFHOSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 173 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 100 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1000A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 173 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 100 A
Voltage - Off State: 1.6 kV
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| TTB6C165N16LOFHOSA1 |
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Виробник: Infineon Technologies
Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1250A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 208 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
Description: SCR MODULE 1.6KV 120A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Bridge, 3-Phase - All SCRs
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1250A @ 50Hz
Number of SCRs, Diodes: 6 SCRs
Current - On State (It (AV)) (Max): 208 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 120 A
Voltage - Off State: 1.6 kV
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| TLE4959CFXHAMA1 |
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Виробник: Infineon Technologies
Description: SENSOR ROTARY PC PIN
Packaging: Bulk
Package / Case: 3-SIP Module
Mounting Type: Through Hole
Output: Analog Voltage, PWM
Operating Temperature: -40°C ~ 175°C (TJ)
Termination Style: PC Pin
Voltage - Supply: 4V ~ 16V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-SSO-3-52
Grade: Automotive
Qualification: AEC-Q100
Description: SENSOR ROTARY PC PIN
Packaging: Bulk
Package / Case: 3-SIP Module
Mounting Type: Through Hole
Output: Analog Voltage, PWM
Operating Temperature: -40°C ~ 175°C (TJ)
Termination Style: PC Pin
Voltage - Supply: 4V ~ 16V
Actuator Type: External Magnet, Not Included
Technology: Hall Effect
For Measuring: Linear, Rotary Position
Supplier Device Package: PG-SSO-3-52
Grade: Automotive
Qualification: AEC-Q100
на замовлення 70180 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 151+ | 137.98 грн |
| TLE49SRP3XTMA1 |
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Виробник: Infineon Technologies
Description: TLE49SRP3XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: PWM, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
Description: TLE49SRP3XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: PWM, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
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Мінімальне замовлення: 2000 шт
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| TLE49SRP3XTMA1 |
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Виробник: Infineon Technologies
Description: TLE49SRP3XTMA1
Grade: Automotive
Output Signal: Clockwise Increase
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Supplier Device Package: PG-SSO-3-41
For Measuring: Angle, Rotary Position
Technology: Magnetoresistive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: PC Pin
Operating Temperature: -40°C ~ 150°C
Output: PWM, SENT
Mounting Type: Through Hole
Package / Case: 3-SIP Module, Formed Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Description: TLE49SRP3XTMA1
Grade: Automotive
Output Signal: Clockwise Increase
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Supplier Device Package: PG-SSO-3-41
For Measuring: Angle, Rotary Position
Technology: Magnetoresistive
Actuator Type: External Magnet, Not Included
Voltage - Supply: 4.5V ~ 5.5V
Termination Style: PC Pin
Operating Temperature: -40°C ~ 150°C
Output: PWM, SENT
Mounting Type: Through Hole
Package / Case: 3-SIP Module, Formed Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
на замовлення 1998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 352.06 грн |
| 5+ | 304.05 грн |
| 10+ | 291.15 грн |
| 25+ | 258.71 грн |
| 50+ | 248.82 грн |
| 100+ | 239.77 грн |
| 500+ | 217.89 грн |
| 1000+ | 211.21 грн |
| CY7C1347G-166AXC |
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Виробник: Infineon Technologies
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
Description: IC SRAM 4.5MBIT PAR 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Memory Size: 4.5Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3.15V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Clock Frequency: 166 MHz
Memory Format: SRAM
Supplier Device Package: 100-TQFP (14x20)
Memory Interface: Parallel
Access Time: 3.5 ns
Memory Organization: 128K x 36
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 72 шт
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| CYW55571MIUBGT |
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Виробник: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 225-BGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz, 6GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.8V
Power - Output: 20dBm
Protocol: 802.11ax, Bluetooth v5.2
Data Rate (Max): 1.2Gbps
Supplier Device Package: SG-UFWLB-225
Modulation: 1024-QAM, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCIe, PCM, SDIO, UART
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 225-BGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz, 6GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.8V
Power - Output: 20dBm
Protocol: 802.11ax, Bluetooth v5.2
Data Rate (Max): 1.2Gbps
Supplier Device Package: SG-UFWLB-225
Modulation: 1024-QAM, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCIe, PCM, SDIO, UART
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Мінімальне замовлення: 5000 шт
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| CYW55573MIUBGT |
Виробник: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 225-BGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz, 6GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.8V
Power - Output: 20dBm
Protocol: 802.11ax, Bluetooth v5.2
Data Rate (Max): 1.2Gbps
Supplier Device Package: SG-UFWLB-225
Modulation: 1024-QAM, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCIe, PCM, SDIO, UART
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 225-BGA, WLBGA
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz, 6GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 4.8V
Power - Output: 20dBm
Protocol: 802.11ax, Bluetooth v5.2
Data Rate (Max): 1.2Gbps
Supplier Device Package: SG-UFWLB-225
Modulation: 1024-QAM, OFDM
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, PCIe, PCM, SDIO, UART
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Мінімальне замовлення: 5000 шт
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| CY39200V208-125NTC |
Виробник: Infineon Technologies
Description: IC CPLD 3072MC 10NS 208QFP
DigiKey Programmable: Not Verified
Number of I/O: 136
Voltage Supply - Internal: 2.5V, 3.3V
Supplier Device Package: 208-PQFP (28x28)
Delay Time tpd(1) Max: 10 ns
Operating Temperature: 0°C ~ 70°C (TA)
Number of Macrocells: 3072
Number of Gates: 288000
Programmable Type: In-System Reprogrammable™ (ISR™) Flash
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Packaging: Bag
Description: IC CPLD 3072MC 10NS 208QFP
DigiKey Programmable: Not Verified
Number of I/O: 136
Voltage Supply - Internal: 2.5V, 3.3V
Supplier Device Package: 208-PQFP (28x28)
Delay Time tpd(1) Max: 10 ns
Operating Temperature: 0°C ~ 70°C (TA)
Number of Macrocells: 3072
Number of Gates: 288000
Programmable Type: In-System Reprogrammable™ (ISR™) Flash
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Packaging: Bag
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| CY39200V388-125MGC |
Виробник: Infineon Technologies
Description: IC CPLD 3072MC 10NS 388BGA
DigiKey Programmable: Not Verified
Number of I/O: 294
Voltage Supply - Internal: 2.5V, 3.3V
Supplier Device Package: 388-BGA (35x35)
Delay Time tpd(1) Max: 10 ns
Operating Temperature: 0°C ~ 70°C (TA)
Number of Macrocells: 3072
Number of Gates: 288000
Programmable Type: In-System Reprogrammable™ (ISR™) Flash
Mounting Type: Surface Mount
Package / Case: 388-BBGA
Packaging: Bag
Description: IC CPLD 3072MC 10NS 388BGA
DigiKey Programmable: Not Verified
Number of I/O: 294
Voltage Supply - Internal: 2.5V, 3.3V
Supplier Device Package: 388-BGA (35x35)
Delay Time tpd(1) Max: 10 ns
Operating Temperature: 0°C ~ 70°C (TA)
Number of Macrocells: 3072
Number of Gates: 288000
Programmable Type: In-System Reprogrammable™ (ISR™) Flash
Mounting Type: Surface Mount
Package / Case: 388-BBGA
Packaging: Bag
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| IS26KS512S-DPBLA200 |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Bulk
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: HyperFlash
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-VFBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Bulk
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: HyperFlash
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-VFBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
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| IS26KS256S-DPBLA200-TR |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS
Packaging: Bulk
Memory Size: 256Mbit
Memory Format: FLASH
Memory Interface: HyperBus
Memory Organization: 32M x 8
Description: IC FLASH 256MBIT HYPERBUS
Packaging: Bulk
Memory Size: 256Mbit
Memory Format: FLASH
Memory Interface: HyperBus
Memory Organization: 32M x 8
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| CY8C6148LQI-S2F02 |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 1MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 53
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x8b, 16x10/12b SAR, Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, DMA, I2S, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 53
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 520 шт
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| IR3513ZMTRPBF |
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Виробник: Infineon Technologies
Description: IC CTRL XPHASE3 POL 32-MLPQ
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 3mA
Applications: Processor
Voltage - Supply: 8V ~ 16V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Bulk
Description: IC CTRL XPHASE3 POL 32-MLPQ
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 3mA
Applications: Processor
Voltage - Supply: 8V ~ 16V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Bulk
на замовлення 150 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 229.24 грн |
| IR3505ZMTRPBF |
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Виробник: Infineon Technologies
Description: IC XPHASE3 CTLR 2.5A 16-MLPQ
Supplier Device Package: 16-MLPQ (3x3)
Current - Supply: 3mA
Applications: Processor
Voltage - Supply: 8V ~ 16V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC XPHASE3 CTLR 2.5A 16-MLPQ
Supplier Device Package: 16-MLPQ (3x3)
Current - Supply: 3mA
Applications: Processor
Voltage - Supply: 8V ~ 16V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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| IR3505ZMTRPBF |
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Виробник: Infineon Technologies
Description: IC XPHASE3 CTLR 2.5A 16-MLPQ
Supplier Device Package: 16-MLPQ (3x3)
Current - Supply: 3mA
Applications: Processor
Voltage - Supply: 8V ~ 16V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC XPHASE3 CTLR 2.5A 16-MLPQ
Supplier Device Package: 16-MLPQ (3x3)
Current - Supply: 3mA
Applications: Processor
Voltage - Supply: 8V ~ 16V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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| IR3505ZMTRPBF |
![]() |
Виробник: Infineon Technologies
Description: IC XPHASE3 CTLR 2.5A 16-MLPQ
Package / Case: 16-VFQFN Exposed Pad
Packaging: Bulk
Supplier Device Package: 16-MLPQ (3x3)
Current - Supply: 3mA
Applications: Processor
Voltage - Supply: 8V ~ 16V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Description: IC XPHASE3 CTLR 2.5A 16-MLPQ
Package / Case: 16-VFQFN Exposed Pad
Packaging: Bulk
Supplier Device Package: 16-MLPQ (3x3)
Current - Supply: 3mA
Applications: Processor
Voltage - Supply: 8V ~ 16V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
на замовлення 1324 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 136+ | 168.51 грн |
| IR3508ZMTRPBF |
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Виробник: Infineon Technologies
Description: IC CTRL XPHASE3 20-MLPQ
Supplier Device Package: 20-MLPQ (4x4)
Current - Supply: 4mA
Applications: Processor
Voltage - Supply: 8V ~ 28V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 20-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC CTRL XPHASE3 20-MLPQ
Supplier Device Package: 20-MLPQ (4x4)
Current - Supply: 4mA
Applications: Processor
Voltage - Supply: 8V ~ 28V
Operating Temperature: 0°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 20-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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| IR3500VMTRPBF |
![]() |
Виробник: Infineon Technologies
Description: IC XPHASE3 CTLR VR11.1 32-MLPQ
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 6.5mA
Applications: Processor
Voltage - Supply: 4.75V ~ 7.5V
Operating Temperature: 0°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC XPHASE3 CTLR VR11.1 32-MLPQ
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 6.5mA
Applications: Processor
Voltage - Supply: 4.75V ~ 7.5V
Operating Temperature: 0°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 32-VFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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| IR3500VMTRPBF |
![]() |
Виробник: Infineon Technologies
Description: IC XPHASE3 CTLR VR11.1 32-MLPQ
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 6.5mA
Applications: Processor
Voltage - Supply: 4.75V ~ 7.5V
Operating Temperature: 0°C ~ 100°C
Mounting Type: Surface Mount
Description: IC XPHASE3 CTLR VR11.1 32-MLPQ
Package / Case: 32-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Supplier Device Package: 32-MLPQ (5x5)
Current - Supply: 6.5mA
Applications: Processor
Voltage - Supply: 4.75V ~ 7.5V
Operating Temperature: 0°C ~ 100°C
Mounting Type: Surface Mount
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| IPQC60T010S7AXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
Qualification: AEC-Q101
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 750+ | 937.79 грн |
| IPQC60T010S7AXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
Qualification: AEC-Q101
Description: AUTOMOTIVE_COOLMOS
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 174A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 50A, 12V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.06mA
Supplier Device Package: PG-HDSOP-22-101
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 318 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 11986 pF @ 300 V
Qualification: AEC-Q101
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1454.23 грн |
| 10+ | 1119.91 грн |
| 25+ | 1049.90 грн |
| 100+ | 913.06 грн |
| 250+ | 878.62 грн |
| TLE493DP3XXMS2GOTOBO1 |
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Виробник: Infineon Technologies
Description: TLE493DP3XXMS2GOTOBO1
Packaging: Box
Interface: I2C, SPI
Contents: Board(s)
Sensor Type: Magnetic, Hall Effect
Utilized IC / Part: TLE493D-P3B6, TLE493D-P3I8
Embedded: Yes, MCU
Description: TLE493DP3XXMS2GOTOBO1
Packaging: Box
Interface: I2C, SPI
Contents: Board(s)
Sensor Type: Magnetic, Hall Effect
Utilized IC / Part: TLE493D-P3B6, TLE493D-P3I8
Embedded: Yes, MCU
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| TLE493DP3I8XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: SEN HALL EFFECT SPI PG-VSON-8-2
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount, Wettable Flank
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.9V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±60mT
Current - Supply (Max): 3.3mA
Supplier Device Package: PG-VSON-8-2
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT SPI PG-VSON-8-2
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount, Wettable Flank
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.9V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±60mT
Current - Supply (Max): 3.3mA
Supplier Device Package: PG-VSON-8-2
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
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| TLE493DP3I8XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: SEN HALL EFFECT SPI PG-VSON-8-2
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount, Wettable Flank
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.9V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±60mT
Current - Supply (Max): 3.3mA
Supplier Device Package: PG-VSON-8-2
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT SPI PG-VSON-8-2
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Output Type: SPI
Mounting Type: Surface Mount, Wettable Flank
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.9V ~ 3.5V
Technology: Hall Effect
Resolution: 12 b
Sensing Range: ±60mT
Current - Supply (Max): 3.3mA
Supplier Device Package: PG-VSON-8-2
Grade: Automotive
Qualification: AEC-Q100
на замовлення 4469 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 149.07 грн |
| 5+ | 127.67 грн |
| 10+ | 121.64 грн |
| 25+ | 107.51 грн |
| 50+ | 102.93 грн |
| 100+ | 98.74 грн |
| 500+ | 88.86 грн |
| 1000+ | 85.79 грн |
| TLE493DW3B6B0HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
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Мінімальне замовлення: 3000 шт
В кошику
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| TLE493DW3B6B2HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLE493DW3B6B3HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 75.92 грн |
| TLE493DW3B6B1HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLE493DP3B6A0HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: SEN HALL EFFECT I2C TSOT-23-6
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT I2C TSOT-23-6
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLE493DP3B6A3HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLE493DP3B6A1HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| TLE493DP3B6A2HTSA1 |
![]() |
Виробник: Infineon Technologies
Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
Description: SEN HALL EFFECT SPI PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| ISC052N03LF2SATMA1 |
Виробник: Infineon Technologies
Description: ISC052N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Description: ISC052N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| ISC052N03LF2SATMA1 |
Виробник: Infineon Technologies
Description: ISC052N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Description: ISC052N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| ISC033N03LF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: ISC033N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Description: ISC033N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 16.73 грн |
| ISC033N03LF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: ISC033N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
Description: ISC033N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 30A, 10V
Power Dissipation (Max): 3W (Ta), 71W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 38.06 грн |
| 12+ | 26.04 грн |
| 25+ | 23.33 грн |
| 100+ | 19.08 грн |
| 250+ | 17.73 грн |
| 500+ | 16.92 грн |
| 1000+ | 15.98 грн |
| 2500+ | 15.29 грн |
| ISC028N03LF2SATMA1 |
Виробник: Infineon Technologies
Description: ISC028N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
Description: ISC028N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| ISC028N03LF2SATMA1 |
Виробник: Infineon Technologies
Description: ISC028N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
Description: ISC028N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 30µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| ISC023N03LF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: ISC023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Description: ISC023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 23.89 грн |
| ISC023N03LF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: ISC023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
Description: ISC023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 40µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 15 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 53.13 грн |
| 10+ | 36.35 грн |
| 25+ | 32.68 грн |
| 100+ | 26.89 грн |
| 250+ | 25.09 грн |
| 500+ | 24.00 грн |
| 1000+ | 22.72 грн |
| 2500+ | 21.79 грн |
| ISC012N03LF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: ISC012N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Description: ISC012N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| ISC012N03LF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: ISC012N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Description: ISC012N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 270A (Tc)
Rds On (Max) @ Id, Vgs: 1.28mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 80µA
Supplier Device Package: PG-TDSON-8-62
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
на замовлення 2090 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 79.29 грн |
| 10+ | 54.98 грн |
| 25+ | 49.69 грн |
| 100+ | 41.17 грн |
| 250+ | 38.56 грн |
| 500+ | 36.99 грн |
| 1000+ | 35.54 грн |
| IPD023N03LF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IPD023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Description: IPD023N03LF2SATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 35.24 грн |
| IPD023N03LF2SATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IPD023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
Description: IPD023N03LF2SATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 60µA
Supplier Device Package: PG-TO252-3-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.28 грн |
| 10+ | 76.43 грн |
| 100+ | 51.18 грн |
| 500+ | 37.87 грн |
| 1000+ | 34.60 грн |
| ICE5QR2280BG1XUMA1 |
![]() |
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| ICE5QR2280BG1XUMA1 |
![]() |
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 121.32 грн |
| 10+ | 85.98 грн |
| 25+ | 78.16 грн |
| 100+ | 65.27 грн |
| 250+ | 61.42 грн |
| 500+ | 59.10 грн |
| 1000+ | 57.87 грн |
| IPP030N10NF2SAKMA1 |
![]() |
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 179A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 140µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 179A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 80A, 10V
Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 140µA
Supplier Device Package: PG-TO220-3-U05
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 50 V
на замовлення 730 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 256.12 грн |
| 10+ | 160.58 грн |
| 50+ | 123.74 грн |
| 100+ | 104.99 грн |
| 500+ | 85.47 грн |
| BGSX24M2U16E6327XTSA1 |
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Виробник: Infineon Technologies
Description: ANTENNA DEVICES
Features: DC Blocked
Packaging: Cut Tape (CT)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: 5G, LTE
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V, 1.65V ~ 1.95V
Insertion Loss: 1.14dB
Frequency Range: 400MHz ~ 7.125GHz
Topology: Absorptive
Test Frequency: 7.125GHz
Isolation: 35dB
Supplier Device Package: PG-ULGA-16-6
Description: ANTENNA DEVICES
Features: DC Blocked
Packaging: Cut Tape (CT)
Package / Case: 16-UFLGA Exposed Pad
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: 5G, LTE
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.1V ~ 1.3V, 1.65V ~ 1.95V
Insertion Loss: 1.14dB
Frequency Range: 400MHz ~ 7.125GHz
Topology: Absorptive
Test Frequency: 7.125GHz
Isolation: 35dB
Supplier Device Package: PG-ULGA-16-6
на замовлення 3462 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 68.19 грн |
| 10+ | 56.05 грн |
| 25+ | 52.81 грн |
| 100+ | 45.41 грн |
| 250+ | 42.92 грн |
| 500+ | 41.16 грн |
| 1000+ | 38.85 грн |
| EVALMA5342MS200WX2TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR MA5342
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±30V ~ 60V
Max Output Power x Channels @ Load: 200W x 2 @ 8Ohm
Utilized IC / Part: MA5342
Description: EVAL BOARD FOR MA5342
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±30V ~ 60V
Max Output Power x Channels @ Load: 200W x 2 @ 8Ohm
Utilized IC / Part: MA5342
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 27896.03 грн |
| EVALMA5302MS200WX2TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL BOARD FOR MA5302
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±17V ~ 32V
Max Output Power x Channels @ Load: 200W x 2 @ 2Ohm
Utilized IC / Part: MA5302
Description: EVAL BOARD FOR MA5302
Packaging: Box
Output Type: 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±17V ~ 32V
Max Output Power x Channels @ Load: 200W x 2 @ 2Ohm
Utilized IC / Part: MA5302
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 27896.03 грн |
| IGB070S10S1XTMA1 |
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Виробник: Infineon Technologies
Description: GANFET N-CH 100V 13A 4TDFN
Packaging: Tube
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
Description: GANFET N-CH 100V 13A 4TDFN
Packaging: Tube
Package / Case: 4-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 76A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 8mA
Supplier Device Package: PG-TSON-4-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 50 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.


























