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CYPD1120-35FNXIT CYPD1120-35FNXIT Infineon Technologies Description: IC MCU 32BIT 32KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 35-WLCSP (3.23x2.10)
Number of I/O: 31
DigiKey Programmable: Not Verified
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TLE4675GATMA1 TLE4675GATMA1 Infineon Technologies Infineon-TLE4675-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101595f72db1f1f46 Description: IC REG LINEAR 5V 400MA TO263-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
на замовлення 6940 шт:
термін постачання 21-31 дні (днів)
167+132.40 грн
Мінімальне замовлення: 167
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AUIRG4BC30U-S AUIRG4BC30U-S Infineon Technologies AUIRG4BC30U-S%28L%29.pdf Description: IGBT 600V 23A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 360µJ
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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AUIRG4BC30USTRL AUIRG4BC30USTRL Infineon Technologies AUIRG4BC30U-S%28L%29.pdf Description: IGBT 600V 23A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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IMW65R075M2HXKSA1 IMW65R075M2HXKSA1 Infineon Technologies infineon-imw65r050m2h-datasheet-en.pdf?fileId=8ac78c8c8d2fe47b018dd63c016352f4 Description: IMW65R075M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.6A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
на замовлення 430 шт:
термін постачання 21-31 дні (днів)
1+485.41 грн
30+267.20 грн
120+223.14 грн
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S29GL256S11TFVV10 Infineon Technologies Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: PNOR
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 256Mb (16M x 16)
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BSZ146N10LS5ATMA1 BSZ146N10LS5ATMA1 Infineon Technologies infineon-bsz146n10ls5-datasheet-en.pdf?fileId=5546d4625696ed760156e6c1a0a327fc Description: MOSFET N-CH 100V 44A TSDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
на замовлення 7963 шт:
термін постачання 21-31 дні (днів)
356+61.78 грн
Мінімальне замовлення: 356
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TDA38806XUMA1 TDA38806XUMA1 Infineon Technologies TDA38806XUMA1.pdf Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
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TDA38806XUMA1 TDA38806XUMA1 Infineon Technologies TDA38806XUMA1.pdf Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Cut Tape (CT)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
на замовлення 1975 шт:
термін постачання 21-31 дні (днів)
3+149.88 грн
10+106.44 грн
25+97.03 грн
100+81.31 грн
250+76.66 грн
500+73.85 грн
1000+70.37 грн
Мінімальне замовлення: 3
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AUIRFR2905Z AUIRFR2905Z Infineon Technologies auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Qualification: AEC-Q101
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TLE496048MS2XTSA1 Infineon Technologies Description: TLE496048MS2XTSA1
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+22.96 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLE496048MS2XTSA1 Infineon Technologies Description: TLE496048MS2XTSA1
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
9+41.73 грн
10+35.02 грн
25+32.61 грн
100+27.34 грн
250+25.32 грн
500+23.90 грн
1000+22.22 грн
Мінімальне замовлення: 9
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TLE49SRI3XTMA1 TLE49SRI3XTMA1 Infineon Technologies Infineon-TLE49SRI3-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912c1b13583143 Description: TLE49SRI3XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: Digital
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 5V ~ 11V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
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TLE49SRI3XTMA1 TLE49SRI3XTMA1 Infineon Technologies Infineon-TLE49SRI3-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912c1b13583143 Description: TLE49SRI3XTMA1
Packaging: Cut Tape (CT)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: Digital
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 5V ~ 11V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1955 шт:
термін постачання 21-31 дні (днів)
2+336.38 грн
5+290.46 грн
10+278.00 грн
25+246.95 грн
50+237.45 грн
100+228.75 грн
500+207.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE49SRC8DXUMA1 TLE49SRC8DXUMA1 Infineon Technologies infineon-tle49sr-c8-p8-s8-datasheet-en.pdf Description: TLE49SRC8DXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
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TLE49SRC8DXUMA1 TLE49SRC8DXUMA1 Infineon Technologies infineon-tle49sr-c8-p8-s8-datasheet-en.pdf Description: TLE49SRC8DXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
1+458.16 грн
5+397.24 грн
10+380.84 грн
25+339.08 грн
50+326.54 грн
100+315.05 грн
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CYPD8125-48LDXIT CYPD8125-48LDXIT Infineon Technologies Infineon-EZ-PD_TM_CCG8_USB_Type-C_port_controller-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c85ecb34701863a96d4321bd2&da=t Description: IC USB MCU 256KB FLASH 48-UFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (256kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 26
на замовлення 2440 шт:
термін постачання 21-31 дні (днів)
1+390.88 грн
10+287.02 грн
25+264.75 грн
100+225.54 грн
250+214.61 грн
500+208.02 грн
1000+199.27 грн
В кошику  од. на суму  грн.
IR21531DPBF IR21531DPBF Infineon Technologies ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
на замовлення 14254 шт:
термін постачання 21-31 дні (днів)
2+244.41 грн
10+176.89 грн
50+153.33 грн
100+137.07 грн
250+129.86 грн
500+125.52 грн
1000+119.94 грн
2500+116.23 грн
5000+113.99 грн
Мінімальне замовлення: 2
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IRF1405ZSTRLPBF IRF1405ZSTRLPBF Infineon Technologies IRF1405Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
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AUIRF1405 AUIRF1405 Infineon Technologies AUIRF1405.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Qualification: AEC-Q101
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TLD11731STDEVALTOBO1 TLD11731STDEVALTOBO1 Infineon Technologies infineon-tld1173-1std-eval-ug-usermanual-en.pdf Description: TLD1173-1STD_EVAL
Packaging: Box
Voltage - Output: 6.5V ~ 18.5V
Voltage - Input: 8V ~ 21V
Contents: Board(s)
Current - Output / Channel: 400mA
Utilized IC / Part: TLD1173
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+14119.51 грн
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IRG8P08N120KDPBF IRG8P08N120KDPBF Infineon Technologies IRG8x08N120KD.pdf Description: IGBT 1200V 15A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 20ns/160ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 600V, 5A, 47Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 89 W
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IRG8P40N120KDPBF IRG8P40N120KDPBF Infineon Technologies IRG8P40N120KD%28-E%29PbF.pdf Description: IGBT 1200V 60A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 305 W
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IRG8P08N120KD-EPBF IRG8P08N120KD-EPBF Infineon Technologies IRG8x08N120KD.pdf Description: IGBT 1200V 15A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/160ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 600V, 5A, 47Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 89 W
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ISG0613N04NM6HSCATMA1 ISG0613N04NM6HSCATMA1 Infineon Technologies Infineon-ISG0613N04NM6HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951b48e4cf5 Description: MOSFET 2N-CH 40V 42A 10WHITFN
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-WHITFN-10-1
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ISG0613N04NM6HSCATMA1 ISG0613N04NM6HSCATMA1 Infineon Technologies Infineon-ISG0613N04NM6HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951b48e4cf5 Description: MOSFET 2N-CH 40V 42A 10WHITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-WHITFN-10-1
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IPI072N10N3GXKSA1 IPI072N10N3GXKSA1 Infineon Technologies Infineon-IPP072N10N3_G-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e012393bed2d20405 Description: MOSFET N-CH 100V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
178+124.30 грн
Мінімальне замовлення: 178
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CY8C3866LTI-207 CY8C3866LTI-207 Infineon Technologies Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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IRF540ZLPBF IRF540ZLPBF Infineon Technologies irf540zpbf.pdf?fileId=5546d462533600a4015355e3af7d19a6 Description: IRF540Z - 36A, 100V, 0.0265OHM,
Packaging: Bulk
DigiKey Programmable: Not Verified
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IRF840PBF IRF840PBF Infineon Technologies irf840_SiHF840_RevD_5-2-16.pdf Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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IRF3205ZPBFXKMA1 IRF3205ZPBFXKMA1 Infineon Technologies search?q=IRF3205ZPBFXKMA1 Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
3+157.55 грн
50+73.71 грн
100+66.11 грн
500+49.54 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRFB4332PBFXKMA1 Infineon Technologies Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
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IMZC120R053M2HXKSA1 IMZC120R053M2HXKSA1 Infineon Technologies IMZC120R053M2HXKSA1.pdf Description: SICFET N-CH 1200V 38A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 13A, 18V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 800 V
на замовлення 366 шт:
термін постачання 21-31 дні (днів)
1+686.39 грн
30+389.42 грн
120+329.93 грн
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TDM22545DXUMA1 TDM22545DXUMA1 Infineon Technologies Infineon-TDM22545D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec8e1decc13b0 Description: POWERSTAGE MODULE
Features: Adjustable Output, Remote On/Off
Packaging: Tape & Reel (TR)
Package / Case: 72-LGA Module
Size / Dimension: 0.39" L x 0.35" W x 0.20" H (10.0mm x 9.0mm x 5.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 125°C
Applications: ITE (Commercial)
Voltage - Input (Max): 16V
Current - Output (Max): 160A
Supplier Device Package: LG-MLGA-72-5
Voltage - Input (Min): 4.25V
Voltage - Output 1: 0.225 ~ 3V
Control Features: Enable, Active High
Power (Watts): 480 W
Number of Outputs: 1
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TDM22545DXUMA1 TDM22545DXUMA1 Infineon Technologies Infineon-TDM22545D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec8e1decc13b0 Description: POWERSTAGE MODULE
Features: Adjustable Output, Remote On/Off
Packaging: Cut Tape (CT)
Package / Case: 72-LGA Module
Size / Dimension: 0.39" L x 0.35" W x 0.20" H (10.0mm x 9.0mm x 5.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 125°C
Applications: ITE (Commercial)
Voltage - Input (Max): 16V
Current - Output (Max): 160A
Supplier Device Package: LG-MLGA-72-5
Voltage - Input (Min): 4.25V
Voltage - Output 1: 0.225 ~ 3V
Control Features: Enable, Active High
Power (Watts): 480 W
Number of Outputs: 1
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
1+1490.30 грн
5+1381.31 грн
10+1359.00 грн
25+1248.03 грн
50+1227.73 грн
100+1207.76 грн
250+1175.37 грн
В кошику  од. на суму  грн.
AUIRF4905L AUIRF4905L Infineon Technologies AUIRF4905S%2CL.pdf Description: MOSFET P-CH 55V 42A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Qualification: AEC-Q101
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IMDQ65R007M2HXUMA1 IMDQ65R007M2HXUMA1 Infineon Technologies Infineon-IMDQ65R007M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934d980ca73a34 Description: IMDQ65R007M2HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 937W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
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IMDQ65R007M2HXUMA1 IMDQ65R007M2HXUMA1 Infineon Technologies Infineon-IMDQ65R007M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934d980ca73a34 Description: IMDQ65R007M2HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 937W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
на замовлення 299 шт:
термін постачання 21-31 дні (днів)
1+2076.20 грн
10+1613.22 грн
25+1516.71 грн
100+1323.86 грн
250+1276.43 грн
В кошику  од. на суму  грн.
AIMCQ120R080M1TXTMA1 AIMCQ120R080M1TXTMA1 Infineon Technologies AIMCQ120R080M1T_v1.10_en.pdf Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R080M1TXTMA1 AIMCQ120R080M1TXTMA1 Infineon Technologies AIMCQ120R080M1T_v1.10_en.pdf Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
на замовлення 620 шт:
термін постачання 21-31 дні (днів)
1+720.45 грн
10+477.27 грн
100+388.49 грн
В кошику  од. на суму  грн.
S29GL01GS11TFV020 S29GL01GS11TFV020 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
1+1190.54 грн
10+1063.70 грн
25+1030.49 грн
91+923.52 грн
В кошику  од. на суму  грн.
FZ675R65KE4NPSA1 FZ675R65KE4NPSA1 Infineon Technologies Infineon-FZ675R65KE4-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194d08c52241d01 Description: IGBT MODULE 6.5KV 675A 2.4MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -50°C ~ 135°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 675A
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 675 A
Voltage - Collector Emitter Breakdown (Max): 6.5 kV
Power - Max: 2.4 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 163000 pF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+110130.46 грн
В кошику  од. на суму  грн.
IR2102PBF IR2102PBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 32555 шт:
термін постачання 21-31 дні (днів)
98+225.07 грн
Мінімальне замовлення: 98
В кошику  од. на суму  грн.
IR2102PBF IR2102PBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
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IRFB7434GPBF IRFB7434GPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N CH 40V 195A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
2+11032.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C4148AZES595TXUMA1 CY8C4148AZES595TXUMA1 Infineon Technologies infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR, Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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IR2103PBF IR2103PBF Infineon Technologies ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
2+183.95 грн
10+131.62 грн
50+113.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRL1404S AUIRL1404S Infineon Technologies AUIRL1404S%2CL.pdf Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
136+158.89 грн
Мінімальне замовлення: 136
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AUIRL1404S AUIRL1404S Infineon Technologies AUIRL1404S%2CL.pdf Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
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AUIRL1404ZS AUIRL1404ZS Infineon Technologies INFN-S-A0002298850-1.pdf?t.download=true&u=5oefqw Description: AUIRL1404ZS - 20V-40V N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
156+139.39 грн
Мінімальне замовлення: 156
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AUIRL1404Z AUIRL1404Z Infineon Technologies auirl1404z.pdf?fileId=5546d462533600a4015355baaaa3153e Description: MOSFET N-CH 40V 160A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Qualification: AEC-Q101
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AUIRL1404ZSTRL AUIRL1404ZSTRL Infineon Technologies auirl1404z.pdf?fileId=5546d462533600a4015355baaaa3153e Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Qualification: AEC-Q101
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AUIRL1404ZSTRL AUIRL1404ZSTRL Infineon Technologies auirl1404z.pdf?fileId=5546d462533600a4015355baaaa3153e Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Qualification: AEC-Q101
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AUIRL1404STRL AUIRL1404STRL Infineon Technologies AUIRL1404S%2CL.pdf Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
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FS1000R08A7P3BHPSA1 Infineon Technologies infineon-fs1000r08a7p3b-datasheet-en.pdf Description: IGBT MOD 750V 600A AGHDG2XT-7611
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-HDG2XT-7611
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+28681.00 грн
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IPT034N15NM6ATMA1 IPT034N15NM6ATMA1 Infineon Technologies infineon-ipt034n15nm6-datasheet-en.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 179µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
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IPT034N15NM6ATMA1 IPT034N15NM6ATMA1 Infineon Technologies infineon-ipt034n15nm6-datasheet-en.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 179µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
на замовлення 1508 шт:
термін постачання 21-31 дні (днів)
1+371.30 грн
10+237.65 грн
100+169.42 грн
500+151.02 грн
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CYPM1111-40LQXI CYPM1111-40LQXI Infineon Technologies Infineon-PMG1-S1_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea45a6733a Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D - 8bit SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 17
DigiKey Programmable: Not Verified
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CYPM1111-40LQXIT CYPM1111-40LQXIT Infineon Technologies Infineon-PMG1-S1_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea45a6733a Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 17
DigiKey Programmable: Not Verified
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IPF011N08NM6ATMA1 IPF011N08NM6ATMA1 Infineon Technologies infineon-ipf011n08nm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 271A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 279µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
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CYPD1120-35FNXIT
CYPD1120-35FNXIT
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 35WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 35-UFBGA, WLCSP
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 35-WLCSP (3.23x2.10)
Number of I/O: 31
DigiKey Programmable: Not Verified
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TLE4675GATMA1 Infineon-TLE4675-DS-v01_00-EN.pdf?fileId=5546d46258fc0bc101595f72db1f1f46
TLE4675GATMA1
Виробник: Infineon Technologies
Description: IC REG LINEAR 5V 400MA TO263-5
Packaging: Bulk
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 80 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: TO-263-5
Voltage - Output (Min/Fixed): 5V
Control Features: Reset
Grade: Automotive
PSRR: 65dB (100Hz)
Voltage Dropout (Max): 0.5V @ 300mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 25 mA
Qualification: AEC-Q100
на замовлення 6940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
167+132.40 грн
Мінімальне замовлення: 167
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AUIRG4BC30U-S AUIRG4BC30U-S%28L%29.pdf
AUIRG4BC30U-S
Виробник: Infineon Technologies
Description: IGBT 600V 23A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 360µJ
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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AUIRG4BC30USTRL AUIRG4BC30U-S%28L%29.pdf
AUIRG4BC30USTRL
Виробник: Infineon Technologies
Description: IGBT 600V 23A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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IMW65R075M2HXKSA1 infineon-imw65r050m2h-datasheet-en.pdf?fileId=8ac78c8c8d2fe47b018dd63c016352f4
IMW65R075M2HXKSA1
Виробник: Infineon Technologies
Description: IMW65R075M2HXKSA1
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26.6A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 11.9A, 20V
Power Dissipation (Max): 111W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-TO247-3-40
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
на замовлення 430 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+485.41 грн
30+267.20 грн
120+223.14 грн
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S29GL256S11TFVV10 Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
Виробник: Infineon Technologies
Description: PNOR
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 256Mb (16M x 16)
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BSZ146N10LS5ATMA1 infineon-bsz146n10ls5-datasheet-en.pdf?fileId=5546d4625696ed760156e6c1a0a327fc
BSZ146N10LS5ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 44A TSDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 23µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 50 V
на замовлення 7963 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
356+61.78 грн
Мінімальне замовлення: 356
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TDA38806XUMA1 TDA38806XUMA1.pdf
TDA38806XUMA1
Виробник: Infineon Technologies
Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Tape & Reel (TR)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
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TDA38806XUMA1 TDA38806XUMA1.pdf
TDA38806XUMA1
Виробник: Infineon Technologies
Description: HIGHLY EFFICIENT DC-DC BUCK REGU
Packaging: Cut Tape (CT)
Package / Case: 14-UFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 6A
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 600kHz, 1.1MHz, 2MHz
Voltage - Input (Max): 16V
Topology: Buck
Supplier Device Package: PG-TSNP-14-6
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.6V
на замовлення 1975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+149.88 грн
10+106.44 грн
25+97.03 грн
100+81.31 грн
250+76.66 грн
500+73.85 грн
1000+70.37 грн
Мінімальне замовлення: 3
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AUIRFR2905Z auirfr2905z.pdf?fileId=5546d462533600a4015355b2212c146c
AUIRFR2905Z
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1380 pF @ 25 V
Qualification: AEC-Q101
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TLE496048MS2XTSA1
Виробник: Infineon Technologies
Description: TLE496048MS2XTSA1
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+22.96 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
TLE496048MS2XTSA1
Виробник: Infineon Technologies
Description: TLE496048MS2XTSA1
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+41.73 грн
10+35.02 грн
25+32.61 грн
100+27.34 грн
250+25.32 грн
500+23.90 грн
1000+22.22 грн
Мінімальне замовлення: 9
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TLE49SRI3XTMA1 Infineon-TLE49SRI3-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912c1b13583143
TLE49SRI3XTMA1
Виробник: Infineon Technologies
Description: TLE49SRI3XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: Digital
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 5V ~ 11V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
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TLE49SRI3XTMA1 Infineon-TLE49SRI3-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a01912c1b13583143
TLE49SRI3XTMA1
Виробник: Infineon Technologies
Description: TLE49SRI3XTMA1
Packaging: Cut Tape (CT)
Package / Case: 3-SIP Module, Formed Leads
Mounting Type: Through Hole
Output: Digital
Operating Temperature: -40°C ~ 150°C
Termination Style: PC Pin
Voltage - Supply: 5V ~ 11V
Actuator Type: External Magnet, Not Included
Technology: Magnetoresistive
For Measuring: Angle, Rotary Position
Supplier Device Package: PG-SSO-3-41
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Clockwise Increase
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1955 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+336.38 грн
5+290.46 грн
10+278.00 грн
25+246.95 грн
50+237.45 грн
100+228.75 грн
500+207.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE49SRC8DXUMA1 infineon-tle49sr-c8-p8-s8-datasheet-en.pdf
TLE49SRC8DXUMA1
Виробник: Infineon Technologies
Description: TLE49SRC8DXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
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TLE49SRC8DXUMA1 infineon-tle49sr-c8-p8-s8-datasheet-en.pdf
TLE49SRC8DXUMA1
Виробник: Infineon Technologies
Description: TLE49SRC8DXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+458.16 грн
5+397.24 грн
10+380.84 грн
25+339.08 грн
50+326.54 грн
100+315.05 грн
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CYPD8125-48LDXIT Infineon-EZ-PD_TM_CCG8_USB_Type-C_port_controller-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c85ecb34701863a96d4321bd2&da=t
CYPD8125-48LDXIT
Виробник: Infineon Technologies
Description: IC USB MCU 256KB FLASH 48-UFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (256kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 26
на замовлення 2440 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+390.88 грн
10+287.02 грн
25+264.75 грн
100+225.54 грн
250+214.61 грн
500+208.02 грн
1000+199.27 грн
В кошику  од. на суму  грн.
IR21531DPBF ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
IR21531DPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
на замовлення 14254 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+244.41 грн
10+176.89 грн
50+153.33 грн
100+137.07 грн
250+129.86 грн
500+125.52 грн
1000+119.94 грн
2500+116.23 грн
5000+113.99 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF1405ZSTRLPBF IRF1405Z%28S%2CL%29PbF.pdf
IRF1405ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
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AUIRF1405 AUIRF1405.pdf
AUIRF1405
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Qualification: AEC-Q101
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TLD11731STDEVALTOBO1 infineon-tld1173-1std-eval-ug-usermanual-en.pdf
TLD11731STDEVALTOBO1
Виробник: Infineon Technologies
Description: TLD1173-1STD_EVAL
Packaging: Box
Voltage - Output: 6.5V ~ 18.5V
Voltage - Input: 8V ~ 21V
Contents: Board(s)
Current - Output / Channel: 400mA
Utilized IC / Part: TLD1173
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+14119.51 грн
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IRG8P08N120KDPBF IRG8x08N120KD.pdf
IRG8P08N120KDPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 15A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 20ns/160ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 600V, 5A, 47Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 89 W
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IRG8P40N120KDPBF IRG8P40N120KD%28-E%29PbF.pdf
IRG8P40N120KDPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 60A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 305 W
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IRG8P08N120KD-EPBF IRG8x08N120KD.pdf
IRG8P08N120KD-EPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 15A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/160ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 600V, 5A, 47Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 89 W
товару немає в наявності
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ISG0613N04NM6HSCATMA1 Infineon-ISG0613N04NM6HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951b48e4cf5
ISG0613N04NM6HSCATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 42A 10WHITFN
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-WHITFN-10-1
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ISG0613N04NM6HSCATMA1 Infineon-ISG0613N04NM6HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951b48e4cf5
ISG0613N04NM6HSCATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 42A 10WHITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-WHITFN-10-1
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IPI072N10N3GXKSA1 Infineon-IPP072N10N3_G-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e012393bed2d20405
IPI072N10N3GXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
178+124.30 грн
Мінімальне замовлення: 178
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CY8C3866LTI-207 Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C3866LTI-207
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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IRF540ZLPBF irf540zpbf.pdf?fileId=5546d462533600a4015355e3af7d19a6
IRF540ZLPBF
Виробник: Infineon Technologies
Description: IRF540Z - 36A, 100V, 0.0265OHM,
Packaging: Bulk
DigiKey Programmable: Not Verified
товару немає в наявності
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IRF840PBF irf840_SiHF840_RevD_5-2-16.pdf
IRF840PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 8A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
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IRF3205ZPBFXKMA1 search?q=IRF3205ZPBFXKMA1
IRF3205ZPBFXKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+157.55 грн
50+73.71 грн
100+66.11 грн
500+49.54 грн
Мінімальне замовлення: 3
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IRFB4332PBFXKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
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IMZC120R053M2HXKSA1 IMZC120R053M2HXKSA1.pdf
IMZC120R053M2HXKSA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 38A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 13A, 18V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 800 V
на замовлення 366 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+686.39 грн
30+389.42 грн
120+329.93 грн
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TDM22545DXUMA1 Infineon-TDM22545D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec8e1decc13b0
TDM22545DXUMA1
Виробник: Infineon Technologies
Description: POWERSTAGE MODULE
Features: Adjustable Output, Remote On/Off
Packaging: Tape & Reel (TR)
Package / Case: 72-LGA Module
Size / Dimension: 0.39" L x 0.35" W x 0.20" H (10.0mm x 9.0mm x 5.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 125°C
Applications: ITE (Commercial)
Voltage - Input (Max): 16V
Current - Output (Max): 160A
Supplier Device Package: LG-MLGA-72-5
Voltage - Input (Min): 4.25V
Voltage - Output 1: 0.225 ~ 3V
Control Features: Enable, Active High
Power (Watts): 480 W
Number of Outputs: 1
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TDM22545DXUMA1 Infineon-TDM22545D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec8e1decc13b0
TDM22545DXUMA1
Виробник: Infineon Technologies
Description: POWERSTAGE MODULE
Features: Adjustable Output, Remote On/Off
Packaging: Cut Tape (CT)
Package / Case: 72-LGA Module
Size / Dimension: 0.39" L x 0.35" W x 0.20" H (10.0mm x 9.0mm x 5.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 125°C
Applications: ITE (Commercial)
Voltage - Input (Max): 16V
Current - Output (Max): 160A
Supplier Device Package: LG-MLGA-72-5
Voltage - Input (Min): 4.25V
Voltage - Output 1: 0.225 ~ 3V
Control Features: Enable, Active High
Power (Watts): 480 W
Number of Outputs: 1
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1490.30 грн
5+1381.31 грн
10+1359.00 грн
25+1248.03 грн
50+1227.73 грн
100+1207.76 грн
250+1175.37 грн
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AUIRF4905L AUIRF4905S%2CL.pdf
AUIRF4905L
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 42A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Qualification: AEC-Q101
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IMDQ65R007M2HXUMA1 Infineon-IMDQ65R007M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934d980ca73a34
IMDQ65R007M2HXUMA1
Виробник: Infineon Technologies
Description: IMDQ65R007M2HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 937W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
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IMDQ65R007M2HXUMA1 Infineon-IMDQ65R007M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934d980ca73a34
IMDQ65R007M2HXUMA1
Виробник: Infineon Technologies
Description: IMDQ65R007M2HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 937W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
на замовлення 299 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2076.20 грн
10+1613.22 грн
25+1516.71 грн
100+1323.86 грн
250+1276.43 грн
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AIMCQ120R080M1TXTMA1 AIMCQ120R080M1T_v1.10_en.pdf
AIMCQ120R080M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R080M1TXTMA1 AIMCQ120R080M1T_v1.10_en.pdf
AIMCQ120R080M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
на замовлення 620 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+720.45 грн
10+477.27 грн
100+388.49 грн
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S29GL01GS11TFV020 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL01GS11TFV020
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1190.54 грн
10+1063.70 грн
25+1030.49 грн
91+923.52 грн
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FZ675R65KE4NPSA1 Infineon-FZ675R65KE4-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194d08c52241d01
FZ675R65KE4NPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 6.5KV 675A 2.4MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -50°C ~ 135°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 675A
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 675 A
Voltage - Collector Emitter Breakdown (Max): 6.5 kV
Power - Max: 2.4 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 163000 pF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+110130.46 грн
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IR2102PBF description IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 32555 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
98+225.07 грн
Мінімальне замовлення: 98
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IR2102PBF description IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
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IRFB7434GPBF IR_PartNumberingSystem.pdf
IRFB7434GPBF
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 195A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+11032.89 грн
Мінімальне замовлення: 2
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CY8C4148AZES595TXUMA1 infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf
CY8C4148AZES595TXUMA1
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR, Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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IR2103PBF ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f
IR2103PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 69 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+183.95 грн
10+131.62 грн
50+113.43 грн
Мінімальне замовлення: 2
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AUIRL1404S AUIRL1404S%2CL.pdf
AUIRL1404S
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
136+158.89 грн
Мінімальне замовлення: 136
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AUIRL1404S AUIRL1404S%2CL.pdf
AUIRL1404S
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
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AUIRL1404ZS INFN-S-A0002298850-1.pdf?t.download=true&u=5oefqw
AUIRL1404ZS
Виробник: Infineon Technologies
Description: AUIRL1404ZS - 20V-40V N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
156+139.39 грн
Мінімальне замовлення: 156
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AUIRL1404Z auirl1404z.pdf?fileId=5546d462533600a4015355baaaa3153e
AUIRL1404Z
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: TO-220
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Qualification: AEC-Q101
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AUIRL1404ZSTRL auirl1404z.pdf?fileId=5546d462533600a4015355baaaa3153e
AUIRL1404ZSTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Qualification: AEC-Q101
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AUIRL1404ZSTRL auirl1404z.pdf?fileId=5546d462533600a4015355baaaa3153e
AUIRL1404ZSTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Qualification: AEC-Q101
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AUIRL1404STRL AUIRL1404S%2CL.pdf
AUIRL1404STRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
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FS1000R08A7P3BHPSA1 infineon-fs1000r08a7p3b-datasheet-en.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 750V 600A AGHDG2XT-7611
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-HDG2XT-7611
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+28681.00 грн
В кошику  од. на суму  грн.
IPT034N15NM6ATMA1 infineon-ipt034n15nm6-datasheet-en.pdf
IPT034N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 179µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
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IPT034N15NM6ATMA1 infineon-ipt034n15nm6-datasheet-en.pdf
IPT034N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 179µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
на замовлення 1508 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+371.30 грн
10+237.65 грн
100+169.42 грн
500+151.02 грн
В кошику  од. на суму  грн.
CYPM1111-40LQXI Infineon-PMG1-S1_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea45a6733a
CYPM1111-40LQXI
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D - 8bit SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 17
DigiKey Programmable: Not Verified
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CYPM1111-40LQXIT Infineon-PMG1-S1_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea45a6733a
CYPM1111-40LQXIT
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 17
DigiKey Programmable: Not Verified
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IPF011N08NM6ATMA1 infineon-ipf011n08nm6-datasheet-en.pdf
IPF011N08NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 271A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 279µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
товару немає в наявності
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