Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117829) > Сторінка 778 з 1964

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IMLT40R025M2HXTMA1 IMLT40R025M2HXTMA1 Infineon Technologies infineon-imt40r025m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51 Description: IMLT40R025M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+261.56 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IMLT40R015M2HXTMA1 IMLT40R015M2HXTMA1 Infineon Technologies infineon-imt40r015m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933 Description: IMLT40R015M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 200 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+373.72 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IMLT40R015M2HXTMA1 IMLT40R015M2HXTMA1 Infineon Technologies infineon-imt40r015m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933 Description: IMLT40R015M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 200 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1+774.19 грн
10+517.41 грн
100+440.48 грн
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IMLT40R011M2HXTMA1 IMLT40R011M2HXTMA1 Infineon Technologies infineon-imlt40r011m2h-datasheet-en.pdf Description: IMLT40R011M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HDSOP-16-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 200 V
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IRG4BC30UPBF IRG4BC30UPBF Infineon Technologies irg4bc30upbf.pdf?fileId=5546d462533600a40153564005ad2289 description Description: IGBT 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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SHIELDBTS70081EPZTOBO1 SHIELDBTS70081EPZTOBO1 Infineon Technologies infineon-profet-2-12v-grade0-productbrief-en.pdf Description: SHIELD_BTS7008-1EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-1EPZ
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+6706.53 грн
В кошику  од. на суму  грн.
IR4426PBF IR4426PBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
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IR4427PBF IR4427PBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
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SHIELD_XENSIV_A SHIELD_XENSIV_A Infineon Technologies Infineon-SHIELD_XENSIV_A_UG-UserManual-v02_00-EN.pdf?fileId=8ac78c8c93956f5001939dcf496b4bc4 Description: SHIELD_XENSIV_A
Packaging: Box
Function: Carbon Dioxide (CO2), Humidity, Pressure, Radar, Temperature
Type: Sensor
Contents: Board(s)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+4628.68 грн
В кошику  од. на суму  грн.
EVAL2EP130RVDTOBO1 EVAL2EP130RVDTOBO1 Infineon Technologies UG-2024-01_EVAL-2EP130R-VD_v1.00_2024-02-26_en.pdf Description: EVAL BOARD FOR 2EP130R
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EP130R
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+5975.48 грн
В кошику  од. на суму  грн.
EVAL2EP130RPRTOBO1 EVAL2EP130RPRTOBO1 Infineon Technologies UG-2024-02_EVAL-2EP130R-PR_v1.00_2024-02-26_en.pdf Description: EVAL BOARD FOR 2EP130R
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EP130R
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+6422.58 грн
В кошику  од. на суму  грн.
SHIELDXENSIVA SHIELDXENSIVA Infineon Technologies infineon-xensiv-sensor-shield-product-brief-productbrief-en.pdf Description: IOT-PSOC6
Packaging: Box
Function: Carbon Dioxide (CO2), Humidity, Pressure, Radar, Temperature
Type: Sensor
Contents: Board(s)
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DG48VSWITCHKITTOBO1 DG48VSWITCHKITTOBO1 Infineon Technologies Infineon-Dual_Gate_48V_switch_board_quick_introduction-Presentations-v02_20-EN.pdf?fileId=8ac78c8c8d1b852e018d2029a416004e Description: EVAL BOARD FOR IAUTN08S5N012L
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IAUTN08S5N012L
Embedded: No
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ISC040N10NM7ATMA1 ISC040N10NM7ATMA1 Infineon Technologies infineon-isc040n10nm7-datasheet-en.pdf Description: ISC040N10NM7ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 66µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
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ISC040N10NM7ATMA1 ISC040N10NM7ATMA1 Infineon Technologies infineon-isc040n10nm7-datasheet-en.pdf Description: ISC040N10NM7ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 66µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
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AUIRF3205ZS AUIRF3205ZS Infineon Technologies auirf3205z.pdf?fileId=5546d462533600a4015355ac71f813a1 Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Qualification: AEC-Q101
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ISC018N08NM6SCATMA1 ISC018N08NM6SCATMA1 Infineon Technologies Infineon-ISC018N08NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e1d697f01 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 40 V
на замовлення 3750 шт:
термін постачання 21-31 дні (днів)
2+282.38 грн
10+206.36 грн
25+189.89 грн
100+161.18 грн
250+153.06 грн
500+148.17 грн
1000+141.78 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISC009N06NM6SCATMA1 ISC009N06NM6SCATMA1 Infineon Technologies Infineon-ISC009N06NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e39af7f07 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 344A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 221W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 118µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 30 V
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ISC016N08NM8SCATMA1 ISC016N08NM8SCATMA1 Infineon Technologies ISC016N08NM8SCATMA1 Description: ISC016N08NM8SCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-WSON-8-2
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ISC016N08NM8SCATMA1 ISC016N08NM8SCATMA1 Infineon Technologies ISC016N08NM8SCATMA1 Description: ISC016N08NM8SCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-WSON-8-2
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ISC165N15NM6ATMA1 ISC165N15NM6ATMA1 Infineon Technologies DS_ISC165N15NM6_en.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 16A, 15V
Power Dissipation (Max): 3W (Ta), 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-45
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
на замовлення 4034 шт:
термін постачання 21-31 дні (днів)
2+157.66 грн
10+97.29 грн
100+66.33 грн
500+49.82 грн
1000+48.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFZ44ZLPBF IRFZ44ZLPBF Infineon Technologies irfz44zpbf.pdf?fileId=5546d462533600a40153563b6a15221c Description: MOSFET N-CH 55V 51A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
на замовлення 979 шт:
термін постачання 21-31 дні (днів)
2+202.37 грн
50+96.80 грн
100+87.29 грн
500+66.26 грн
Мінімальне замовлення: 2
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AUIRF1404ZS AUIRF1404ZS Infineon Technologies auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376 Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404ZSTRL AUIRF1404ZSTRL Infineon Technologies auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376 Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
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AUIRF3007 AUIRF3007 Infineon Technologies AUIRF3007.pdf Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Qualification: AEC-Q101
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FF650R17IE4PBOSA1 Infineon Technologies Infineon-FF650R17IE4P-DS-v03_00-EN.pdf?fileId=5546d46253e9fadc0153efeab1493c89 Description: IGBT MODULE 1700V 650A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
1+35448.14 грн
В кошику  од. на суму  грн.
FF6MR12KM1HHPSA1 FF6MR12KM1HHPSA1 Infineon Technologies Infineon-FF6MR12KM1H-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a31aa537a2 Description: MOSFET
Packaging: Tray
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+12887.52 грн
10+11568.16 грн
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IPA70R450P7SXKSA1 IPA70R450P7SXKSA1 Infineon Technologies infineon-ipa70r450p7s-datasheet-en.pdf Description: MOSFET N-CH 700V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
на замовлення 31924 шт:
термін постачання 21-31 дні (днів)
396+50.32 грн
Мінімальне замовлення: 396
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IPU95R450P7AKMA1 IPU95R450P7AKMA1 Infineon Technologies infineon-ipu95r450p7-datasheet-en.pdf Description: MOSFET N-CH 950V 14A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
на замовлення 1344 шт:
термін постачання 21-31 дні (днів)
2+189.82 грн
75+85.41 грн
150+77.32 грн
525+61.76 грн
1050+57.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS21084PBF IRS21084PBF Infineon Technologies IRSDS08085-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 10900 шт:
термін постачання 21-31 дні (днів)
105+189.36 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
IRS21084PBF IRS21084PBF Infineon Technologies IRSDS08085-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS2101PBF IRS2101PBF Infineon Technologies infineon-irs2101-datasheet-en.pdf description Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS2109PBF IRS2109PBF Infineon Technologies IRSDS11365-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS21094PBF IRS21094PBF Infineon Technologies IRSDS11365-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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AIKYX200N75CP2ALSA1 AIKYX200N75CP2ALSA1 Infineon Technologies Infineon-AIKYX200N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c90530b3a0190939f601541b9 Description: AIKYX200N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A
Supplier Device Package: PG-TO247-4-13
Td (on/off) @ 25°C: 79ns/268ns
Switching Energy: 7.6mJ (on), 6.4mJ (off)
Test Condition: 470V, 200A, 5Ohm, 15V
Gate Charge: 1.27 µC
Grade: Automotive
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 938 W
Qualification: AEC-Q101
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
1+1038.53 грн
30+614.90 грн
120+530.62 грн
В кошику  од. на суму  грн.
AIKYX160N75CP2ALSA1 AIKYX160N75CP2ALSA1 Infineon Technologies Infineon-AIKYX160N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c90530b3a019091d6ff7f6760 Description: AIKYX160N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 160A
Supplier Device Package: PG-TO247-4-13
Td (on/off) @ 25°C: 64ns/234ns
Switching Energy: 5.5mJ (on), 4.9mJ (off)
Test Condition: 470V, 160A, 5Ohm, 15V
Gate Charge: 975 nC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 750 W
Qualification: AEC-Q101
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
1+927.93 грн
30+544.42 грн
В кошику  од. на суму  грн.
ISZ023N06LM6ATMA1 ISZ023N06LM6ATMA1 Infineon Technologies infineon-isz023n06lm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 149A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
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ISZ025N06NM6ATMA1 ISZ025N06NM6ATMA1 Infineon Technologies infineon-isz025n06nm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
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ISC025N06LM6ATMA1 ISC025N06LM6ATMA1 Infineon Technologies Infineon-ISC025N06LM6-DataSheet-v01_00-EN.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
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IAUC100N08S5N034ATMA1 IAUC100N08S5N034ATMA1 Infineon Technologies Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tj)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 78µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4559 pF @ 40 V
Qualification: AEC-Q101
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FM28V020-TGTR FM28V020-TGTR Infineon Technologies Infineon-FM28V020_256_KBIT_(32K_X_8)_F-RAM_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8aa524123&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 256KBIT PARALLEL 32STSOP
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 140ns
Memory Interface: Parallel
Access Time: 140 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+660.55 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
IKWH100N75EH7XKSA1 IKWH100N75EH7XKSA1 Infineon Technologies infineon-ikwh100n75eh7-datasheet-en.pdf Description: INDUSTRY 14
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 100A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/237ns
Switching Energy: 3.2mJ (on), 1.8mJ (off)
Test Condition: 400V, 100A, 10Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 429 W
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
1+542.01 грн
10+355.61 грн
В кошику  од. на суму  грн.
ISC320N12LM6ATMA1 ISC320N12LM6ATMA1 Infineon Technologies Infineon-ISC320N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf172b661152 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
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ISC320N12LM6ATMA1 ISC320N12LM6ATMA1 Infineon Technologies Infineon-ISC320N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf172b661152 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
на замовлення 4453 шт:
термін постачання 21-31 дні (днів)
4+94.13 грн
10+57.25 грн
100+37.99 грн
500+27.89 грн
1000+25.40 грн
2000+24.03 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
BC807-16 BC807-16 Infineon Technologies INFNS11647-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 45V 0.8A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
на замовлення 26000 шт:
термін постачання 21-31 дні (днів)
1416+14.18 грн
Мінімальне замовлення: 1416
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CY23FS04ZXC CY23FS04ZXC Infineon Technologies download Description: IC FANOUT DIST 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 166.7MHz
Type: Fanout Distribution, Multiplexer, Zero Delay Buffer
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 3:4
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
1+315.32 грн
10+230.98 грн
96+193.34 грн
192+174.40 грн
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IR2085STRPBFXUMA1 Infineon Technologies Description: DCDC CONTROLLER
Packaging: Tape & Reel (TR)
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BTH500601LUAAUMA1 BTH500601LUAAUMA1 Infineon Technologies infineon-bth50060-1lua-datasheet-en.pdf?fileId=8ac78c8c9625080601965d30ec367e70 Description: BTH500601LUAAUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 15.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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BTH500601LUAAUMA1 BTH500601LUAAUMA1 Infineon Technologies infineon-bth50060-1lua-datasheet-en.pdf?fileId=8ac78c8c9625080601965d30ec367e70 Description: BTH500601LUAAUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 15.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1011 шт:
термін постачання 21-31 дні (днів)
2+309.05 грн
10+226.15 грн
25+208.26 грн
100+176.98 грн
250+168.18 грн
500+162.87 грн
1000+155.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISC060N06NM6ATMA1 ISC060N06NM6ATMA1 Infineon Technologies infineon-isc060n06nm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
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SAF-XE162FN-40F80L AA SAF-XE162FN-40F80L AA Infineon Technologies Infineon-XE162XN-DS-v01_05-en.pdf?folderId=db3a3043156fd5730115b3a665650d23&fileId=db3a30432313ff5e0123521cdca362f6&ack=t Description: IC MCU 16BIT 320KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Number of I/O: 40
DigiKey Programmable: Not Verified
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SAK-XE162FN-24F80L AA SAK-XE162FN-24F80L AA Infineon Technologies Infineon-XE162XN-DS-v01_05-en.pdf?folderId=db3a3043156fd5730115b3a665650d23&fileId=db3a30432313ff5e0123521cdca362f6&ack=t Description: IC MCU 16BIT 192KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Number of I/O: 40
DigiKey Programmable: Not Verified
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XC2734X40F80LRABKXUMA1 XC2734X40F80LRABKXUMA1 Infineon Technologies XC2734X.pdf Description: IC MCU 16/32B 320KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C4025LQI-S401T CY8C4025LQI-S401T Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC MCU 32BIT 32KB FLASH 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 19
DigiKey Programmable: Not Verified
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CY8C4025LQI-S401T CY8C4025LQI-S401T Infineon Technologies Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file Description: IC MCU 32BIT 32KB FLASH 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 19
DigiKey Programmable: Not Verified
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
2+159.23 грн
10+113.45 грн
25+103.57 грн
100+87.03 грн
250+82.19 грн
500+79.27 грн
1000+75.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C4025LQAS411XQLA1 CY8C4025LQAS411XQLA1 Infineon Technologies Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR; D/A 1x7b, 1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Grade: Automotive
Number of I/O: 19
Qualification: AEC-Q100
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
2+294.15 грн
10+214.74 грн
25+197.69 грн
100+167.91 грн
490+154.58 грн
980+150.39 грн
1470+145.87 грн
2940+142.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XC822MT1FRAAAKXUMA1 XC822MT1FRAAAKXUMA1 Infineon Technologies Infineon-XC822_XC824-DS-v01_02-en.pdf?fileId=db3a3043271faefd01273d68a3d968df Description: IC MCU 8BIT 4KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-1
Number of I/O: 13
DigiKey Programmable: Not Verified
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BSZ0902NSATMA1 BSZ0902NSATMA1 Infineon Technologies BSZ0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f25d963971d2f Description: MOSFET N-CH 30V 19A/40A TSDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
на замовлення 41647 шт:
термін постачання 21-31 дні (днів)
587+33.77 грн
Мінімальне замовлення: 587
В кошику  од. на суму  грн.
DF1000R17IE4PBPSA1 DF1000R17IE4PBPSA1 Infineon Technologies Infineon-DF1000R17IE4P-DS-v03_00-EN.pdf?fileId=5546d462675a6972016765ef1c6d7854 Description: IGBT MOD 1700V 1000A AG-PRIME3-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
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DSL70E6327HTSA1 DSL70E6327HTSA1 Infineon Technologies dsl70.pdf?folderId=db3a30431441fb5d0114927dbe551006&fileId=db3a30431441fb5d0114927e397f1007 Description: TVS DIODE 50VWM 9V PGSOT1433D
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 50V (Max)
Supplier Device Package: PG-SOT-143-3D
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 245W
Power Line Protection: No
на замовлення 2923 шт:
термін постачання 21-31 дні (днів)
974+20.53 грн
Мінімальне замовлення: 974
В кошику  од. на суму  грн.
IMLT40R025M2HXTMA1 infineon-imt40r025m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51
IMLT40R025M2HXTMA1
Виробник: Infineon Technologies
Description: IMLT40R025M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+261.56 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IMLT40R015M2HXTMA1 infineon-imt40r015m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933
IMLT40R015M2HXTMA1
Виробник: Infineon Technologies
Description: IMLT40R015M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 200 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+373.72 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IMLT40R015M2HXTMA1 infineon-imt40r015m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933
IMLT40R015M2HXTMA1
Виробник: Infineon Technologies
Description: IMLT40R015M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 200 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+774.19 грн
10+517.41 грн
100+440.48 грн
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IMLT40R011M2HXTMA1 infineon-imlt40r011m2h-datasheet-en.pdf
IMLT40R011M2HXTMA1
Виробник: Infineon Technologies
Description: IMLT40R011M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HDSOP-16-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 200 V
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IRG4BC30UPBF description irg4bc30upbf.pdf?fileId=5546d462533600a40153564005ad2289
IRG4BC30UPBF
Виробник: Infineon Technologies
Description: IGBT 600V 23A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
товару немає в наявності
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SHIELDBTS70081EPZTOBO1 infineon-profet-2-12v-grade0-productbrief-en.pdf
SHIELDBTS70081EPZTOBO1
Виробник: Infineon Technologies
Description: SHIELD_BTS7008-1EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-1EPZ
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6706.53 грн
В кошику  од. на суму  грн.
IR4426PBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4426PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
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IR4427PBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4427PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
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SHIELD_XENSIV_A Infineon-SHIELD_XENSIV_A_UG-UserManual-v02_00-EN.pdf?fileId=8ac78c8c93956f5001939dcf496b4bc4
SHIELD_XENSIV_A
Виробник: Infineon Technologies
Description: SHIELD_XENSIV_A
Packaging: Box
Function: Carbon Dioxide (CO2), Humidity, Pressure, Radar, Temperature
Type: Sensor
Contents: Board(s)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4628.68 грн
В кошику  од. на суму  грн.
EVAL2EP130RVDTOBO1 UG-2024-01_EVAL-2EP130R-VD_v1.00_2024-02-26_en.pdf
EVAL2EP130RVDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 2EP130R
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EP130R
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5975.48 грн
В кошику  од. на суму  грн.
EVAL2EP130RPRTOBO1 UG-2024-02_EVAL-2EP130R-PR_v1.00_2024-02-26_en.pdf
EVAL2EP130RPRTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 2EP130R
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EP130R
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6422.58 грн
В кошику  од. на суму  грн.
SHIELDXENSIVA infineon-xensiv-sensor-shield-product-brief-productbrief-en.pdf
SHIELDXENSIVA
Виробник: Infineon Technologies
Description: IOT-PSOC6
Packaging: Box
Function: Carbon Dioxide (CO2), Humidity, Pressure, Radar, Temperature
Type: Sensor
Contents: Board(s)
товару немає в наявності
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DG48VSWITCHKITTOBO1 Infineon-Dual_Gate_48V_switch_board_quick_introduction-Presentations-v02_20-EN.pdf?fileId=8ac78c8c8d1b852e018d2029a416004e
DG48VSWITCHKITTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IAUTN08S5N012L
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IAUTN08S5N012L
Embedded: No
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ISC040N10NM7ATMA1 infineon-isc040n10nm7-datasheet-en.pdf
ISC040N10NM7ATMA1
Виробник: Infineon Technologies
Description: ISC040N10NM7ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 66µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
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ISC040N10NM7ATMA1 infineon-isc040n10nm7-datasheet-en.pdf
ISC040N10NM7ATMA1
Виробник: Infineon Technologies
Description: ISC040N10NM7ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 66µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
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AUIRF3205ZS auirf3205z.pdf?fileId=5546d462533600a4015355ac71f813a1
AUIRF3205ZS
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Qualification: AEC-Q101
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ISC018N08NM6SCATMA1 Infineon-ISC018N08NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e1d697f01
ISC018N08NM6SCATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 40 V
на замовлення 3750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+282.38 грн
10+206.36 грн
25+189.89 грн
100+161.18 грн
250+153.06 грн
500+148.17 грн
1000+141.78 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISC009N06NM6SCATMA1 Infineon-ISC009N06NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e39af7f07
ISC009N06NM6SCATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 344A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 221W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 118µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 30 V
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ISC016N08NM8SCATMA1 ISC016N08NM8SCATMA1
ISC016N08NM8SCATMA1
Виробник: Infineon Technologies
Description: ISC016N08NM8SCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-WSON-8-2
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ISC016N08NM8SCATMA1 ISC016N08NM8SCATMA1
ISC016N08NM8SCATMA1
Виробник: Infineon Technologies
Description: ISC016N08NM8SCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-WSON-8-2
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ISC165N15NM6ATMA1 DS_ISC165N15NM6_en.pdf
ISC165N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 16A, 15V
Power Dissipation (Max): 3W (Ta), 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-45
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
на замовлення 4034 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+157.66 грн
10+97.29 грн
100+66.33 грн
500+49.82 грн
1000+48.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFZ44ZLPBF irfz44zpbf.pdf?fileId=5546d462533600a40153563b6a15221c
IRFZ44ZLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
на замовлення 979 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+202.37 грн
50+96.80 грн
100+87.29 грн
500+66.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRF1404ZS auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376
AUIRF1404ZS
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404ZSTRL auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376
AUIRF1404ZSTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
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AUIRF3007 AUIRF3007.pdf
AUIRF3007
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12.6mOhm @ 48A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3270 pF @ 25 V
Qualification: AEC-Q101
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FF650R17IE4PBOSA1 Infineon-FF650R17IE4P-DS-v03_00-EN.pdf?fileId=5546d46253e9fadc0153efeab1493c89
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 650A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+35448.14 грн
В кошику  од. на суму  грн.
FF6MR12KM1HHPSA1 Infineon-FF6MR12KM1H-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a31aa537a2
FF6MR12KM1HHPSA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tray
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+12887.52 грн
10+11568.16 грн
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IPA70R450P7SXKSA1 infineon-ipa70r450p7s-datasheet-en.pdf
IPA70R450P7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
на замовлення 31924 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
396+50.32 грн
Мінімальне замовлення: 396
В кошику  од. на суму  грн.
IPU95R450P7AKMA1 infineon-ipu95r450p7-datasheet-en.pdf
IPU95R450P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 14A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
на замовлення 1344 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+189.82 грн
75+85.41 грн
150+77.32 грн
525+61.76 грн
1050+57.08 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS21084PBF description IRSDS08085-1.pdf?t.download=true&u=5oefqw
IRS21084PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 10900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
105+189.36 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
IRS21084PBF description IRSDS08085-1.pdf?t.download=true&u=5oefqw
IRS21084PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS2101PBF description infineon-irs2101-datasheet-en.pdf
IRS2101PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS2109PBF IRSDS11365-1.pdf?t.download=true&u=5oefqw
IRS2109PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS21094PBF description IRSDS11365-1.pdf?t.download=true&u=5oefqw
IRS21094PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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AIKYX200N75CP2ALSA1 Infineon-AIKYX200N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c90530b3a0190939f601541b9
AIKYX200N75CP2ALSA1
Виробник: Infineon Technologies
Description: AIKYX200N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A
Supplier Device Package: PG-TO247-4-13
Td (on/off) @ 25°C: 79ns/268ns
Switching Energy: 7.6mJ (on), 6.4mJ (off)
Test Condition: 470V, 200A, 5Ohm, 15V
Gate Charge: 1.27 µC
Grade: Automotive
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 938 W
Qualification: AEC-Q101
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1038.53 грн
30+614.90 грн
120+530.62 грн
В кошику  од. на суму  грн.
AIKYX160N75CP2ALSA1 Infineon-AIKYX160N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c90530b3a019091d6ff7f6760
AIKYX160N75CP2ALSA1
Виробник: Infineon Technologies
Description: AIKYX160N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 160A
Supplier Device Package: PG-TO247-4-13
Td (on/off) @ 25°C: 64ns/234ns
Switching Energy: 5.5mJ (on), 4.9mJ (off)
Test Condition: 470V, 160A, 5Ohm, 15V
Gate Charge: 975 nC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 750 W
Qualification: AEC-Q101
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+927.93 грн
30+544.42 грн
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ISZ023N06LM6ATMA1 infineon-isz023n06lm6-datasheet-en.pdf
ISZ023N06LM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 149A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
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ISZ025N06NM6ATMA1 infineon-isz025n06nm6-datasheet-en.pdf
ISZ025N06NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
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ISC025N06LM6ATMA1 Infineon-ISC025N06LM6-DataSheet-v01_00-EN.pdf
ISC025N06LM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
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IAUC100N08S5N034ATMA1 Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e
IAUC100N08S5N034ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tj)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 78µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4559 pF @ 40 V
Qualification: AEC-Q101
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FM28V020-TGTR Infineon-FM28V020_256_KBIT_(32K_X_8)_F-RAM_MEMORY-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8aa524123&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM28V020-TGTR
Виробник: Infineon Technologies
Description: IC FRAM 256KBIT PARALLEL 32STSOP
Packaging: Tape & Reel (TR)
Package / Case: 32-TFSOP (0.465", 11.80mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 32-sTSOP
Write Cycle Time - Word, Page: 140ns
Memory Interface: Parallel
Access Time: 140 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+660.55 грн
Мінімальне замовлення: 1500
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IKWH100N75EH7XKSA1 infineon-ikwh100n75eh7-datasheet-en.pdf
IKWH100N75EH7XKSA1
Виробник: Infineon Technologies
Description: INDUSTRY 14
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 105 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 100A
Supplier Device Package: PG-TO247-3-32
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 31ns/237ns
Switching Energy: 3.2mJ (on), 1.8mJ (off)
Test Condition: 400V, 100A, 10Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 429 W
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+542.01 грн
10+355.61 грн
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ISC320N12LM6ATMA1 Infineon-ISC320N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf172b661152
ISC320N12LM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
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ISC320N12LM6ATMA1 Infineon-ISC320N12LM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8b6555fe018baf172b661152
ISC320N12LM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 9A, 10V
Power Dissipation (Max): 3W (Ta), 43W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: SuperSO8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 60 V
на замовлення 4453 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+94.13 грн
10+57.25 грн
100+37.99 грн
500+27.89 грн
1000+25.40 грн
2000+24.03 грн
Мінімальне замовлення: 4
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BC807-16 INFNS11647-1.pdf?t.download=true&u=5oefqw
BC807-16
Виробник: Infineon Technologies
Description: TRANS PNP 45V 0.8A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
на замовлення 26000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1416+14.18 грн
Мінімальне замовлення: 1416
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CY23FS04ZXC download
CY23FS04ZXC
Виробник: Infineon Technologies
Description: IC FANOUT DIST 16TSSOP
Packaging: Tube
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 166.7MHz
Type: Fanout Distribution, Multiplexer, Zero Delay Buffer
Input: LVCMOS, LVTTL, Crystal
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 3:4
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 209 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+315.32 грн
10+230.98 грн
96+193.34 грн
192+174.40 грн
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IR2085STRPBFXUMA1
Виробник: Infineon Technologies
Description: DCDC CONTROLLER
Packaging: Tape & Reel (TR)
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BTH500601LUAAUMA1 infineon-bth50060-1lua-datasheet-en.pdf?fileId=8ac78c8c9625080601965d30ec367e70
BTH500601LUAAUMA1
Виробник: Infineon Technologies
Description: BTH500601LUAAUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 15.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
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BTH500601LUAAUMA1 infineon-bth50060-1lua-datasheet-en.pdf?fileId=8ac78c8c9625080601965d30ec367e70
BTH500601LUAAUMA1
Виробник: Infineon Technologies
Description: BTH500601LUAAUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 6mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 15.9A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-HSOF-8-6
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1011 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+309.05 грн
10+226.15 грн
25+208.26 грн
100+176.98 грн
250+168.18 грн
500+162.87 грн
1000+155.91 грн
Мінімальне замовлення: 2
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ISC060N06NM6ATMA1 infineon-isc060n06nm6-datasheet-en.pdf
ISC060N06NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.2A (Ta), 62A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 14µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
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SAF-XE162FN-40F80L AA Infineon-XE162XN-DS-v01_05-en.pdf?folderId=db3a3043156fd5730115b3a665650d23&fileId=db3a30432313ff5e0123521cdca362f6&ack=t
SAF-XE162FN-40F80L AA
Виробник: Infineon Technologies
Description: IC MCU 16BIT 320KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Number of I/O: 40
DigiKey Programmable: Not Verified
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SAK-XE162FN-24F80L AA Infineon-XE162XN-DS-v01_05-en.pdf?folderId=db3a3043156fd5730115b3a665650d23&fileId=db3a30432313ff5e0123521cdca362f6&ack=t
SAK-XE162FN-24F80L AA
Виробник: Infineon Technologies
Description: IC MCU 16BIT 192KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 192KB (192K x 8)
RAM Size: 26K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Number of I/O: 40
DigiKey Programmable: Not Verified
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XC2734X40F80LRABKXUMA1 XC2734X.pdf
XC2734X40F80LRABKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 16/32B 320KB FLASH 64LQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 34K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 9x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I2C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I2S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-64-6
Number of I/O: 38
DigiKey Programmable: Not Verified
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CY8C4025LQI-S401T Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CY8C4025LQI-S401T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 19
DigiKey Programmable: Not Verified
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CY8C4025LQI-S401T Infineon-PSoC_4_PSoC_4000S_Datasheet_Programmable_System-on-Chip_(PSoC_)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eda97715cf1&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-file
CY8C4025LQI-S401T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 24QFN
Packaging: Cut Tape (CT)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 19
DigiKey Programmable: Not Verified
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+159.23 грн
10+113.45 грн
25+103.57 грн
100+87.03 грн
250+82.19 грн
500+79.27 грн
1000+75.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C4025LQAS411XQLA1 Infineon-Automotive_PSoC_4_PSoC_4000S_Family_Datasheet_Programmable_System-on-Chip_(PSoC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee641716e5b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all
CY8C4025LQAS411XQLA1
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR; D/A 1x7b, 1x8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Grade: Automotive
Number of I/O: 19
Qualification: AEC-Q100
на замовлення 4900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+294.15 грн
10+214.74 грн
25+197.69 грн
100+167.91 грн
490+154.58 грн
980+150.39 грн
1470+145.87 грн
2940+142.84 грн
Мінімальне замовлення: 2
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XC822MT1FRAAAKXUMA1 Infineon-XC822_XC824-DS-v01_02-en.pdf?fileId=db3a3043271faefd01273d68a3d968df
XC822MT1FRAAAKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: XC800
Data Converters: A/D 4x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.5V ~ 5.5V
Connectivity: I2C, SSC, UART/USART
Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
Supplier Device Package: PG-TSSOP-16-1
Number of I/O: 13
DigiKey Programmable: Not Verified
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BSZ0902NSATMA1 BSZ0902NS_Rev+2.1.pdf?folderId=db3a304313b8b5a60113cee8763b02d7&fileId=db3a30432f0d175c012f25d963971d2f
BSZ0902NSATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 19A/40A TSDSON
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 15 V
на замовлення 41647 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
587+33.77 грн
Мінімальне замовлення: 587
В кошику  од. на суму  грн.
DF1000R17IE4PBPSA1 Infineon-DF1000R17IE4P-DS-v03_00-EN.pdf?fileId=5546d462675a6972016765ef1c6d7854
DF1000R17IE4PBPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 1700V 1000A AG-PRIME3-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Chopper
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 1000A
NTC Thermistor: Yes
Supplier Device Package: AG-PRIME3-1
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1000 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 1000000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 81 nF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
DSL70E6327HTSA1 dsl70.pdf?folderId=db3a30431441fb5d0114927dbe551006&fileId=db3a30431441fb5d0114927e397f1007
DSL70E6327HTSA1
Виробник: Infineon Technologies
Description: TVS DIODE 50VWM 9V PGSOT1433D
Packaging: Bulk
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 2.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 27A (8/20µs)
Voltage - Reverse Standoff (Typ): 50V (Max)
Supplier Device Package: PG-SOT-143-3D
Unidirectional Channels: 2
Voltage - Clamping (Max) @ Ipp: 9V
Power - Peak Pulse: 245W
Power Line Protection: No
на замовлення 2923 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
974+20.53 грн
Мінімальне замовлення: 974
В кошику  од. на суму  грн.
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