Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117827) > Сторінка 783 з 1964
| Фото | Назва | Виробник | Інформація |
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| 38DN06ELEMPRXPSA1 | Infineon Technologies |
Description: DIODE STD 600V 5095A EEUPEC0 Packaging: Tray Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 5095A Supplier Device Package: E-EUPEC-0 Operating Temperature - Junction: 180°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 990 mV @ 4500 A Current - Reverse Leakage @ Vr: 50 mA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IR2132JPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 44PLCCPackaging: Bulk Package / Case: 44-LCC (J-Lead), 32 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58) Rise / Fall Time (Typ): 80ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA DigiKey Programmable: Not Verified |
на замовлення 5248 шт: термін постачання 21-31 дні (днів) |
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S25FS512SAGMFV011 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 16SOICPackaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O, QPI Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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S25FS064SAGMFI013 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 2ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S25FS064SAGMFV013 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 2ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S25FS064SAGMFV010 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 8SOICPackaging: Tray Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Memory Interface: SPI - Quad I/O, QPI Memory Organization: 8M x 8 DigiKey Programmable: Verified |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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S25FS256SAGMFV003 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S25FS256SAGMFB003 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Grade: Automotive Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S25FS256SAGMFB001 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOICPackaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Grade: Automotive Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S25FS256SAGMFM003 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Grade: Automotive Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S25FS256SAGMFM000 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOICPackaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Grade: Automotive Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S25FS256SAGMFM001 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOICPackaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Grade: Automotive Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S25FS512SAGMFI013 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O, QPI Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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S25FS512SAGMFV013 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O, QPI Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IQE012N03LM5CGATMA1 | Infineon Technologies |
Description: IQE012N03LM5CGATMA1Packaging: Tape & Reel (TR) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TTFN-9-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IQE012N03LM5CGATMA1 | Infineon Technologies |
Description: IQE012N03LM5CGATMA1Packaging: Cut Tape (CT) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TTFN-9-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IQE012N03LM5CGSCATMA1 | Infineon Technologies |
Description: IQE012N03LM5CGSCATMA1Packaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-WHTFN-9-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IQE012N03LM5CGSCATMA1 | Infineon Technologies |
Description: IQE012N03LM5CGSCATMA1Packaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-WHTFN-9-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS700151ESPEVALBRDTOBO1 | Infineon Technologies |
Description: BTS70015-1ESP EVALBRDPackaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Contents: Board(s) Utilized IC / Part: BTS70015-1ESP Embedded: No |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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ISCH57N04NM7VSCATMA1 | Infineon Technologies |
Description: ISCH57N04NM7VSCATMA1Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 443A (Tc) Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 113µA Supplier Device Package: PG-WSON-8-2 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ISCH57N04NM7VSCATMA1 | Infineon Technologies |
Description: ISCH57N04NM7VSCATMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 443A (Tc) Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 113µA Supplier Device Package: PG-WSON-8-2 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1ED21271S65FXUMA1 | Infineon Technologies |
Description: 1ED21271S65FXUMA1Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 7.2V ~ 22V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 12ns, 12ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: SiC MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 4A, 4A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1ED21271S65FXUMA1 | Infineon Technologies |
Description: 1ED21271S65FXUMA1Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 7.2V ~ 22V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 12ns, 12ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: SiC MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 4A, 4A |
на замовлення 1795 шт: термін постачання 21-31 дні (днів) |
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| DF1000R17IE4DB2BOSA1 | Infineon Technologies |
Description: DF1000R17IE4D_B2 - 1700 V, 1000Packaging: Bulk |
на замовлення 398 шт: термін постачання 21-31 дні (днів) |
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CY8C4025AZI-S403T | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 48TQFPPackaging: Tape & Reel (TR) Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 1x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CYW88550DCUBGTXTMA1 | Infineon Technologies |
Description: WIRELESS AUTOMOTIVE Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRG4BC30S-STRLP | Infineon Technologies |
Description: IGBT 600V 34A 100W D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 22ns/540ns Switching Energy: 260µJ (on), 3.45mJ (off) Test Condition: 480V, 18A, 23Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 68 A Power - Max: 100 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRG4BC30S-STRLP | Infineon Technologies |
Description: IGBT 600V 34A 100W D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 22ns/540ns Switching Energy: 260µJ (on), 3.45mJ (off) Test Condition: 480V, 18A, 23Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 68 A Power - Max: 100 W |
на замовлення 353 шт: термін постачання 21-31 дні (днів) |
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IRG4BC30SPBF | Infineon Technologies |
Description: IGBT 600V 34A TO-220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 22ns/540ns Switching Energy: 260µJ (on), 3.45mJ (off) Test Condition: 480V, 18A, 23Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 68 A Power - Max: 100 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRG4BC30S-S | Infineon Technologies |
Description: IGBT 600V 34A 100W D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 22ns/540ns Switching Energy: 260µJ (on), 3.45mJ (off) Test Condition: 480V, 18A, 23Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 68 A Power - Max: 100 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DDB2U50N08W1R_B23 | Infineon Technologies |
Bridge Rectifiers Bridge Rectifier 600V |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BA 592 E6327 | Infineon Technologies |
PIN Diodes PIN 35 V 100 mA |
на замовлення 11769 шт: термін постачання 21-30 дні (днів) |
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| BA595E6327HTSA1 | Infineon Technologies |
PIN Diodes Silicon PIN Diode 50V 100mA |
на замовлення 14327 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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BAR9002ELE6327XTMA1 | Infineon Technologies |
PIN Diodes RF DIODES |
на замовлення 548 шт: термін постачання 21-30 дні (днів) |
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BAR 81W H6327 | Infineon Technologies |
PIN Diodes RF DIODE |
на замовлення 7092 шт: термін постачання 21-30 дні (днів) |
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| BA 592 E6433 | Infineon Technologies |
PIN Diodes Silicon RF Switching Diode 35V 100mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAR 63-02V H6327 | Infineon Technologies |
PIN Diodes RF DIODE |
на замовлення 2336 шт: термін постачання 21-30 дні (днів) |
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| BA 595 E6327 | Infineon Technologies |
PIN Diodes Silicon PIN Diode 50V 100mA |
на замовлення 6730 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
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BAR 64-04 E6327 | Infineon Technologies |
PIN Diodes Silicon PIN Diode 150V 100mA |
на замовлення 53649 шт: термін постачання 21-30 дні (днів) |
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BAR 88-02V H6327 | Infineon Technologies |
PIN Diodes RF DIODE |
на замовлення 3577 шт: термін постачання 21-30 дні (днів) |
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| BAR 63-04 E6327 | Infineon Technologies |
PIN Diodes Silicon PIN Diodes |
на замовлення 1353 шт: термін постачання 21-30 дні (днів) |
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BAR8802VH6327XTSA1 | Infineon Technologies |
PIN Diodes RF DIODE |
на замовлення 17280 шт: термін постачання 21-30 дні (днів) |
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BAT 18-04 E6327 | Infineon Technologies |
PIN Diodes Silicon RF Switching Diode |
на замовлення 7920 шт: термін постачання 21-30 дні (днів) |
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BBY5602VH6327XTSA1 | Infineon Technologies |
PIN Diodes RF DIODES |
на замовлення 60374 шт: термін постачання 21-30 дні (днів) |
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| BAR 61 E6327 | Infineon Technologies |
PIN Diodes Silicon PIN Diode 140mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAR6405WH6327XTSA1 | Infineon Technologies |
PIN Diodes RF DIODE |
на замовлення 12787 шт: термін постачання 21-30 дні (днів) |
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BAR6404WH6327XTSA1 | Infineon Technologies |
PIN Diodes RF DIODE |
на замовлення 1681 шт: термін постачання 21-30 дні (днів) |
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BAR 64-06W H6327 | Infineon Technologies |
PIN Diodes RF DIODE |
на замовлення 5007 шт: термін постачання 21-30 дні (днів) |
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BAR6402ELE6327XTMA1 | Infineon Technologies |
PIN Diodes RF DIODES |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| BAR 63-06 E6327 | Infineon Technologies |
PIN Diodes Silicon PIN Diodes |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BAR 64-02EL E6327 | Infineon Technologies |
PIN Diodes RF DIODES |
на замовлення 13838 шт: термін постачання 21-30 дні (днів) |
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| BAR 89-02LRH E6327 | Infineon Technologies |
PIN Diodes Silicon PIN Diode |
на замовлення 14999 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | |||||||||||||||
| BAR9002ELSE6327XTSA1 | Infineon Technologies |
PIN Diodes RF DIODES |
на замовлення 254 шт: термін постачання 21-30 дні (днів) |
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| BAR 64-02V H6327 | Infineon Technologies |
PIN Diodes RF DIODE |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| BAR 64-05 E6327 | Infineon Technologies |
PIN Diodes Silicon PIN Diode 150V 100mA |
на замовлення 116 шт: термін постачання 21-30 дні (днів) |
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BAR 14-1 E6327 | Infineon Technologies |
PIN Diodes PIN 100 V 140 mA |
на замовлення 6000 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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BAR 64-04W H6327 | Infineon Technologies |
PIN Diodes RF DIODE |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BAR 15-1 E6327 | Infineon Technologies |
PIN Diodes PIN 100 V 140 mA |
на замовлення 79 шт: термін постачання 21-30 дні (днів) |
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| BAR 90-02EL E6327 | Infineon Technologies |
PIN Diodes RF DIODES |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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BAR6303WE6327HTSA1 | Infineon Technologies |
PIN Diodes PIN 50 V 100 mA |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
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| 38DN06ELEMPRXPSA1 |
Виробник: Infineon Technologies
Description: DIODE STD 600V 5095A EEUPEC0
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5095A
Supplier Device Package: E-EUPEC-0
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 4500 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
Description: DIODE STD 600V 5095A EEUPEC0
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5095A
Supplier Device Package: E-EUPEC-0
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 4500 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
товару немає в наявності
В кошику
од. на суму грн.
| IR2132JPBF | ![]() |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 5248 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 403.68 грн |
| S25FS512SAGMFV011 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 10 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 784.39 грн |
| 10+ | 701.63 грн |
| S25FS064SAGMFI013 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| S25FS064SAGMFV013 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 8M x 8
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 8M x 8
товару немає в наявності
В кошику
од. на суму грн.
| S25FS064SAGMFV010 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| S25FS256SAGMFV003 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| S25FS256SAGMFB003 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| S25FS256SAGMFB001 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| S25FS256SAGMFM003 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| S25FS256SAGMFM000 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| S25FS256SAGMFM001 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику
од. на суму грн.
| S25FS512SAGMFI013 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| S25FS512SAGMFV013 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| IQE012N03LM5CGATMA1 |
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Виробник: Infineon Technologies
Description: IQE012N03LM5CGATMA1
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Description: IQE012N03LM5CGATMA1
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
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| IQE012N03LM5CGATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IQE012N03LM5CGATMA1
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Description: IQE012N03LM5CGATMA1
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
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| IQE012N03LM5CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IQE012N03LM5CGSCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Description: IQE012N03LM5CGSCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
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| IQE012N03LM5CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IQE012N03LM5CGSCATMA1
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Description: IQE012N03LM5CGSCATMA1
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
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| BTS700151ESPEVALBRDTOBO1 |
![]() |
Виробник: Infineon Technologies
Description: BTS70015-1ESP EVALBRD
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS70015-1ESP
Embedded: No
Description: BTS70015-1ESP EVALBRD
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS70015-1ESP
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 7774.09 грн |
| ISCH57N04NM7VSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: ISCH57N04NM7VSCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 443A (Tc)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 113µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V
Description: ISCH57N04NM7VSCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 443A (Tc)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 113µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V
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| ISCH57N04NM7VSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: ISCH57N04NM7VSCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 443A (Tc)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 113µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V
Description: ISCH57N04NM7VSCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 443A (Tc)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 113µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V
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| 1ED21271S65FXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: 1ED21271S65FXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.2V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
Description: 1ED21271S65FXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.2V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
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| 1ED21271S65FXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: 1ED21271S65FXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.2V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
Description: 1ED21271S65FXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.2V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
на замовлення 1795 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 101.19 грн |
| 10+ | 71.08 грн |
| 25+ | 64.45 грн |
| 100+ | 53.65 грн |
| 250+ | 50.40 грн |
| 500+ | 48.44 грн |
| 1000+ | 47.11 грн |
| DF1000R17IE4DB2BOSA1 |
![]() |
на замовлення 398 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 42762.57 грн |
| CY8C4025AZI-S403T |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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| IRG4BC30S-STRLP |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 34A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Description: IGBT 600V 34A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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| IRG4BC30S-STRLP |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 34A 100W D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Description: IGBT 600V 34A 100W D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
на замовлення 353 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 154+ | 131.63 грн |
| IRG4BC30SPBF | ![]() |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 34A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Description: IGBT 600V 34A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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В кошику
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| AUIRG4BC30S-S |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 34A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Description: IGBT 600V 34A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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од. на суму грн.
| DDB2U50N08W1R_B23 |
![]() |
Виробник: Infineon Technologies
Bridge Rectifiers Bridge Rectifier 600V
Bridge Rectifiers Bridge Rectifier 600V
на замовлення 19 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
| BA 592 E6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes PIN 35 V 100 mA
PIN Diodes PIN 35 V 100 mA
на замовлення 11769 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.26 грн |
| 42+ | 7.78 грн |
| 100+ | 5.30 грн |
| 500+ | 4.95 грн |
| 1000+ | 4.74 грн |
| 3000+ | 4.39 грн |
| 6000+ | 4.25 грн |
| BA595E6327HTSA1 |
![]() |
Виробник: Infineon Technologies
PIN Diodes Silicon PIN Diode 50V 100mA
PIN Diodes Silicon PIN Diode 50V 100mA
на замовлення 14327 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
| BAR9002ELE6327XTMA1 |
![]() |
Виробник: Infineon Technologies
PIN Diodes RF DIODES
PIN Diodes RF DIODES
на замовлення 548 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 10.49 грн |
| 52+ | 6.17 грн |
| 100+ | 4.18 грн |
| 500+ | 3.97 грн |
| 1000+ | 3.77 грн |
| 2500+ | 3.56 грн |
| 5000+ | 3.42 грн |
| BAR 81W H6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
на замовлення 7092 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.74 грн |
| 14+ | 23.57 грн |
| 100+ | 16.52 грн |
| 500+ | 15.83 грн |
| 1000+ | 15.20 грн |
| 3000+ | 14.36 грн |
| BA 592 E6433 |
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Виробник: Infineon Technologies
PIN Diodes Silicon RF Switching Diode 35V 100mA
PIN Diodes Silicon RF Switching Diode 35V 100mA
товару немає в наявності
В кошику
од. на суму грн.
| BAR 63-02V H6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
на замовлення 2336 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.75 грн |
| 19+ | 17.16 грн |
| 100+ | 8.44 грн |
| 500+ | 5.72 грн |
| 1000+ | 4.53 грн |
| 3000+ | 3.90 грн |
| 6000+ | 3.42 грн |
| BA 595 E6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes Silicon PIN Diode 50V 100mA
PIN Diodes Silicon PIN Diode 50V 100mA
на замовлення 6730 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
| BAR 64-04 E6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes Silicon PIN Diode 150V 100mA
PIN Diodes Silicon PIN Diode 150V 100mA
на замовлення 53649 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 25.22 грн |
| 18+ | 18.44 грн |
| 100+ | 9.13 грн |
| 500+ | 6.14 грн |
| 1000+ | 4.88 грн |
| 3000+ | 4.18 грн |
| 6000+ | 3.63 грн |
| BAR 88-02V H6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
на замовлення 3577 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.67 грн |
| 11+ | 30.31 грн |
| 100+ | 16.45 грн |
| 500+ | 11.23 грн |
| BAR 63-04 E6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes Silicon PIN Diodes
PIN Diodes Silicon PIN Diodes
на замовлення 1353 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 19.60 грн |
| 29+ | 11.15 грн |
| 100+ | 8.09 грн |
| 500+ | 7.67 грн |
| 1000+ | 7.39 грн |
| 3000+ | 6.90 грн |
| 6000+ | 6.62 грн |
| BAR8802VH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
на замовлення 17280 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 40.67 грн |
| 11+ | 30.31 грн |
| 100+ | 16.45 грн |
| 500+ | 11.23 грн |
| BAT 18-04 E6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes Silicon RF Switching Diode
PIN Diodes Silicon RF Switching Diode
на замовлення 7920 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 50.35 грн |
| 11+ | 30.39 грн |
| 100+ | 17.36 грн |
| 500+ | 13.25 грн |
| 1000+ | 11.71 грн |
| 3000+ | 10.11 грн |
| 6000+ | 9.27 грн |
| BBY5602VH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
PIN Diodes RF DIODES
PIN Diodes RF DIODES
на замовлення 60374 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.91 грн |
| 28+ | 11.71 грн |
| 100+ | 8.16 грн |
| 3000+ | 8.09 грн |
| BAR 61 E6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes Silicon PIN Diode 140mA
PIN Diodes Silicon PIN Diode 140mA
товару немає в наявності
В кошику
од. на суму грн.
| BAR6405WH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
на замовлення 12787 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.76 грн |
| 33+ | 9.86 грн |
| 100+ | 6.69 грн |
| 500+ | 6.34 грн |
| 1000+ | 6.14 грн |
| 3000+ | 5.51 грн |
| BAR6404WH6327XTSA1 |
![]() |
Виробник: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
на замовлення 1681 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.76 грн |
| 33+ | 9.86 грн |
| 100+ | 6.69 грн |
| 500+ | 6.34 грн |
| 1000+ | 6.14 грн |
| 3000+ | 5.72 грн |
| 6000+ | 5.51 грн |
| BAR 64-06W H6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
на замовлення 5007 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.76 грн |
| 33+ | 9.86 грн |
| 100+ | 6.69 грн |
| 500+ | 6.34 грн |
| 1000+ | 6.14 грн |
| 3000+ | 5.72 грн |
| 6000+ | 5.51 грн |
| BAR6402ELE6327XTMA1 |
![]() |
Виробник: Infineon Technologies
PIN Diodes RF DIODES
PIN Diodes RF DIODES
товару немає в наявності
В кошику
од. на суму грн.
| BAR 63-06 E6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes Silicon PIN Diodes
PIN Diodes Silicon PIN Diodes
товару немає в наявності
В кошику
од. на суму грн.
| BAR 64-02EL E6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes RF DIODES
PIN Diodes RF DIODES
на замовлення 13838 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 36.36 грн |
| 13+ | 24.86 грн |
| 100+ | 13.67 грн |
| 500+ | 8.58 грн |
| 1000+ | 7.53 грн |
| 2500+ | 6.62 грн |
| 5000+ | 5.58 грн |
| BAR 89-02LRH E6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes Silicon PIN Diode
PIN Diodes Silicon PIN Diode
на замовлення 14999 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
| BAR9002ELSE6327XTSA1 |
![]() |
Виробник: Infineon Technologies
PIN Diodes RF DIODES
PIN Diodes RF DIODES
на замовлення 254 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 29+ | 11.23 грн |
| 49+ | 6.66 грн |
| 100+ | 4.53 грн |
| 500+ | 4.25 грн |
| 1000+ | 4.04 грн |
| 2500+ | 3.77 грн |
| 5000+ | 3.63 грн |
| BAR 64-02V H6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
товару немає в наявності
В кошику
од. на суму грн.
| BAR 64-05 E6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes Silicon PIN Diode 150V 100mA
PIN Diodes Silicon PIN Diode 150V 100mA
на замовлення 116 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.59 грн |
| 12+ | 28.14 грн |
| 100+ | 15.48 грн |
| 500+ | 9.69 грн |
| 1000+ | 8.51 грн |
| 3000+ | 7.46 грн |
| BAR 14-1 E6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes PIN 100 V 140 mA
PIN Diodes PIN 100 V 140 mA
на замовлення 6000 шт:
термін постачання 21-30 дні (днів)В кошику од. на суму грн.
| BAR 64-04W H6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes RF DIODE
PIN Diodes RF DIODE
товару немає в наявності
В кошику
од. на суму грн.
| BAR 15-1 E6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes PIN 100 V 140 mA
PIN Diodes PIN 100 V 140 mA
на замовлення 79 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 42.30 грн |
| 10+ | 34.00 грн |
| 100+ | 20.15 грн |
| 500+ | 15.13 грн |
| BAR 90-02EL E6327 |
![]() |
Виробник: Infineon Technologies
PIN Diodes RF DIODES
PIN Diodes RF DIODES
товару немає в наявності
В кошику
од. на суму грн.
| BAR6303WE6327HTSA1 |
![]() |
Виробник: Infineon Technologies
PIN Diodes PIN 50 V 100 mA
PIN Diodes PIN 50 V 100 mA
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 9.76 грн |
| 55+ | 5.85 грн |
| 100+ | 3.97 грн |
| 500+ | 3.70 грн |
| 1000+ | 3.56 грн |
| 3000+ | 3.21 грн |
| 9000+ | 3.14 грн |
























