Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119473) > Сторінка 783 з 1992

Обрати Сторінку:   [  << Попередня Сторінка ]  1 199 398 597 778 779 780 781 782 783 784 785 786 787 788 796 995 1194 1393 1592 1791 1990 1992  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
IMT65R040M2HXUMA1 IMT65R040M2HXUMA1 Infineon Technologies Infineon-IMT65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3414e43d08 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.7A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IMT65R040M2HXUMA1 IMT65R040M2HXUMA1 Infineon Technologies Infineon-IMT65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3414e43d08 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.7A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IMT65R050M2HXUMA1 IMT65R050M2HXUMA1 Infineon Technologies Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11 Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IMT65R050M2HXUMA1 IMT65R050M2HXUMA1 Infineon Technologies Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11 Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IMT65R075M2HXUMA1 IMT65R075M2HXUMA1 Infineon Technologies infineon-imt65r075m2h-datasheet-en.pdf Description: SICFET N-CH 650V 33.7A HSOF-8
Packaging: Tube
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.7A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.9A, 18V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
AUIRF9540N AUIRF9540N Infineon Technologies AUIRF9540N.pdf Description: MOSFET P-CH 100V 23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 11A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SPP02N60C3XKSA1 SPP02N60C3XKSA1 Infineon Technologies Infineon-SPP02N60C3-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42d5b09485f Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
на замовлення 73020 шт:
термін постачання 21-31 дні (днів)
429+46.92 грн
Мінімальне замовлення: 429
В кошику  од. на суму  грн.
SPB02N60C3ATMA1 SPB02N60C3ATMA1 Infineon Technologies SPB02N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e153f494d Description: MOSFET N-CH 650V 1.8A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
322+62.33 грн
Мінімальне замовлення: 322
В кошику  од. на суму  грн.
ITS6080SEPDXUMA1 ITS6080SEPDXUMA1 Infineon Technologies infineon-its6080s-ep-d-datasheet-en.pdf Description: PROFET
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 80mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 60V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+113.84 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ITS6080SEPDXUMA1 ITS6080SEPDXUMA1 Infineon Technologies infineon-its6080s-ep-d-datasheet-en.pdf Description: PROFET
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 80mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 60V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+208.72 грн
10+150.74 грн
25+138.17 грн
100+116.67 грн
250+110.48 грн
500+106.75 грн
1000+101.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF1405ZSTRLPBF IRF1405ZSTRLPBF Infineon Technologies IRF1405Z%28S%2CL%29PbF.pdf Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
AUIRF1405 AUIRF1405 Infineon Technologies AUIRF1405.pdf Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
AUIRFZ44N AUIRFZ44N Infineon Technologies AUIRFZ44N.pdf Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
S27KL0642DPBHI023 S27KL0642DPBHI023 Infineon Technologies Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164 Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 36ns
Memory Interface: HyperBus
Access Time: 36 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
на замовлення 3399 шт:
термін постачання 21-31 дні (днів)
2+296.72 грн
10+266.38 грн
25+258.46 грн
50+236.97 грн
100+231.37 грн
250+224.00 грн
500+214.90 грн
1000+209.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IQE018N06NM6SCATMA1 IQE018N06NM6SCATMA1 Infineon Technologies infineon-iqe018n06nm6sc-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 51µA
Supplier Device Package: PG-WHSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
2+253.11 грн
10+158.99 грн
100+110.96 грн
500+84.90 грн
1000+84.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISC019N10NM8ATMA1 Infineon Technologies Description: ISC019N10NM8ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
товару немає в наявності
В кошику  од. на суму  грн.
ISC019N10NM8ATMA1 Infineon Technologies Description: ISC019N10NM8ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
товару немає в наявності
В кошику  од. на суму  грн.
ISC019N10NM8SCATMA1 ISC019N10NM8SCATMA1 Infineon Technologies ISC019N10NM8SCATMA1.pdf Description: ISC019N10NM8SCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
ISC019N10NM8SCATMA1 ISC019N10NM8SCATMA1 Infineon Technologies ISC019N10NM8SCATMA1.pdf Description: ISC019N10NM8SCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
S78HS512TC0BHB013 S78HS512TC0BHB013 Infineon Technologies Infineon-S78HS512TC0_S78HL512TC0_512Mb_SEMPER_Flash_and_64Mb_HYPERRAM_2.0_Octal_interface_multi-chip_package_1.8_V_3.0_V-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8386267f0183a234ee365d4b&da=t Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S78HS512TC0BHB013 S78HS512TC0BHB013 Infineon Technologies Infineon-S78HS512TC0_S78HL512TC0_512Mb_SEMPER_Flash_and_64Mb_HYPERRAM_2.0_Octal_interface_multi-chip_package_1.8_V_3.0_V-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8386267f0183a234ee365d4b&da=t Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
на замовлення 1940 шт:
термін постачання 21-31 дні (днів)
1+1630.03 грн
10+1454.17 грн
25+1408.21 грн
50+1289.20 грн
100+1257.16 грн
250+1215.49 грн
500+1165.18 грн
В кошику  од. на суму  грн.
IGLR65R200D2XUMA1 IGLR65R200D2XUMA1 Infineon Technologies infineon-iglr65r200d2-datasheet-en.pdf Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+53.22 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IGLR65R200D2XUMA1 IGLR65R200D2XUMA1 Infineon Technologies infineon-iglr65r200d2-datasheet-en.pdf Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
на замовлення 6632 шт:
термін постачання 21-31 дні (днів)
2+190.03 грн
10+118.04 грн
100+81.06 грн
500+61.22 грн
1000+57.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
GS0650111LMRXUSA1 GS0650111LMRXUSA1 Infineon Technologies Infineon-GS-065-011-1-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e51606b81513c Description: GS-065-011-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
250+163.02 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS0650111LMRXUSA1 GS0650111LMRXUSA1 Infineon Technologies Infineon-GS-065-011-1-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e51606b81513c Description: GS-065-011-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 462 шт:
термін постачання 21-31 дні (днів)
1+381.61 грн
10+244.94 грн
100+175.32 грн
В кошику  од. на суму  грн.
IGT65R045D2ATMA1 IGT65R045D2ATMA1 Infineon Technologies infineon-igt65r045d2-datasheet-en.pdf Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGT65R045D2ATMA1 IGT65R045D2ATMA1 Infineon Technologies infineon-igt65r045d2-datasheet-en.pdf Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
на замовлення 1521 шт:
термін постачання 21-31 дні (днів)
1+566.97 грн
10+371.53 грн
100+272.63 грн
500+251.50 грн
В кошику  од. на суму  грн.
IGLT65R045D2ATMA1 IGLT65R045D2ATMA1 Infineon Technologies infineon-iglt65r045d2-datasheet-en.pdf Description: GANFET N-CH 650V 38A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGLT65R045D2ATMA1 IGLT65R045D2ATMA1 Infineon Technologies infineon-iglt65r045d2-datasheet-en.pdf Description: GANFET N-CH 650V 38A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
на замовлення 1188 шт:
термін постачання 21-31 дні (днів)
1+566.97 грн
10+371.53 грн
100+272.63 грн
500+251.50 грн
В кошику  од. на суму  грн.
GS0650182LMRXUSA1 GS0650182LMRXUSA1 Infineon Technologies Infineon-GS-065-018-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e516072455144 Description: GS-065-018-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
250+283.60 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS0650182LMRXUSA1 GS0650182LMRXUSA1 Infineon Technologies Infineon-GS-065-018-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e516072455144 Description: GS-065-018-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
на замовлення 283 шт:
термін постачання 21-31 дні (днів)
1+620.70 грн
10+408.28 грн
100+301.63 грн
В кошику  од. на суму  грн.
FP25R12W2T4BOMA1 Infineon Technologies Infineon-FP25R12W2T4-DS-v02_02-en_jp.pdf?fileId=db3a30433dfcb54c013dfda180a3021c Description: FP25R12 - IGBT MODULE
Packaging: Bulk
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
8+2594.67 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
S25FL512SAGMFAG13 S25FL512SAGMFAG13 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
IPTC017N10NM5LF2ATMA1 IPTC017N10NM5LF2ATMA1 Infineon Technologies Infineon-IPTC017N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d07092601cc8 Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IPTC017N10NM5LF2ATMA1 IPTC017N10NM5LF2ATMA1 Infineon Technologies Infineon-IPTC017N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d07092601cc8 Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
на замовлення 1620 шт:
термін постачання 21-31 дні (днів)
1+468.06 грн
10+303.21 грн
100+219.82 грн
500+194.60 грн
В кошику  од. на суму  грн.
IMSQ120R026M2HHXUMA1 IMSQ120R026M2HHXUMA1 Infineon Technologies DS_IMSQ120R026M2HH_v1.00_en.pdf Description: SICFET 2N-CH 1200V 83A HDSOP16
Packaging: Tape & Reel (TR)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 410W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 800V
Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 18V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-16-221
товару немає в наявності
В кошику  од. на суму  грн.
IMSQ120R026M2HHXUMA1 IMSQ120R026M2HHXUMA1 Infineon Technologies DS_IMSQ120R026M2HH_v1.00_en.pdf Description: SICFET 2N-CH 1200V 83A HDSOP16
Packaging: Cut Tape (CT)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 410W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 800V
Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 18V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-16-221
на замовлення 653 шт:
термін постачання 21-31 дні (днів)
1+1580.97 грн
10+1097.04 грн
100+1013.73 грн
В кошику  од. на суму  грн.
IPC020N10L3X1SA1 IPC020N10L3X1SA1 Infineon Technologies DS_IPC020N10L3_2_5.pdf?fileId=5546d4614755559a01477c39579c626c Description: MOSFET N-CH 100V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 12µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Drain to Source Voltage (Vdss): 100 V
товару немає в наявності
В кошику  од. на суму  грн.
BGS12PN10E6327XTSA1 BGS12PN10E6327XTSA1 Infineon Technologies Infineon-BGS12PN10-DS-v01_00-EN.pdf?fileId=5546d46256fb43b30157565d296541b1 Description: IC RF SWITCH SPDT 6GHZ TSNP10-1
Packaging: Bulk
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
50+397.14 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
AUIRF1404STRL AUIRF1404STRL Infineon Technologies auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374 Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
AUIRF1404 AUIRF1404 Infineon Technologies auirf1404.pdf?fileId=5546d462533600a4015355a8c82d1372 Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
AUIRF1404S AUIRF1404S Infineon Technologies auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374 Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
REFDOORCONTROLTOBO1 REFDOORCONTROLTOBO1 Infineon Technologies infineon-door-control-module-reference-design-preview-usermanual-en.pdf Description: REFDOORCONTROLTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTM90x1, BTS7200, TLE9166EQ, TLE9562
Primary Attributes: 5.5V ~ 20V Supply
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+21843.03 грн
В кошику  од. на суму  грн.
AUIRFC8407TR Infineon Technologies Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
на замовлення 116606 шт:
термін постачання 21-31 дні (днів)
363+54.94 грн
Мінімальне замовлення: 363
В кошику  од. на суму  грн.
EVAL2KWSICIHTOBO1 Infineon Technologies Description: EVAL2KWSICIHTOBO1
Packaging: Box
Function: MOSFET
Type: Power Management
Contents: Board(s)
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+22244.89 грн
В кошику  од. на суму  грн.
IAUMN10S5N017GAUMA1 IAUMN10S5N017GAUMA1 Infineon Technologies Infineon-IAUMN10S5N017G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f3c03b8111a Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 215µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12514 pF @ 50 V
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
2+267.13 грн
10+194.61 грн
25+178.94 грн
100+151.74 грн
250+144.02 грн
500+139.37 грн
1000+133.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRFZ34N AUIRFZ34N Infineon Technologies AUIRFZ34N.pdf Description: MOSFET N-CH 55V 29A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IR21531PBF IR21531PBF Infineon Technologies ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
на замовлення 23526 шт:
термін постачання 21-31 дні (днів)
140+141.65 грн
Мінімальне замовлення: 140
В кошику  од. на суму  грн.
CY9BF217TBGL-GK7E1 CY9BF217TBGL-GK7E1 Infineon Technologies Infineon-CY9B210T_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede8ca16378&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 768KB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, Ethernet, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
REFAUDIOGANB750WTOBO1 REFAUDIOGANB750WTOBO1 Infineon Technologies REFAUDIOGANB750WTOBO1 Description: EVAL BOARD FOR IRS20957S
Packaging: Box
Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±36V
Max Output Power x Channels @ Load: 750W x 1 @ 4Ohm; 375W x 2 @ 2Ohm
Utilized IC / Part: IRS20957S
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+23327.42 грн
В кошику  од. на суму  грн.
IM241S6S1BALMA1 IM241S6S1BALMA1 Infineon Technologies Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88 Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
на замовлення 237 шт:
термін постачання 21-31 дні (днів)
1+408.87 грн
15+290.88 грн
30+274.93 грн
105+237.31 грн
В кошику  од. на суму  грн.
IM241S6S1JALMA1 IM241S6S1JALMA1 Infineon Technologies Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88 Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
на замовлення 224 шт:
термін постачання 21-31 дні (днів)
1+408.87 грн
15+290.88 грн
30+274.93 грн
105+237.31 грн
В кошику  од. на суму  грн.
IM241M6S1BALMA1 IM241M6S1BALMA1 Infineon Technologies Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88 Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
1+443.92 грн
15+317.18 грн
30+299.98 грн
105+259.25 грн
В кошику  од. на суму  грн.
IM241L6S1BALMA1 IM241L6S1BALMA1 Infineon Technologies Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88 Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
1+487.53 грн
15+349.83 грн
30+331.16 грн
105+286.58 грн
В кошику  од. на суму  грн.
TLE9944EQA40XUMA1 TLE9944EQA40XUMA1 Infineon Technologies Infineon-TLE994x_5x-ProductOverview-ProductOverview-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01953d558e1e6e8e Description: EMBEDDED_POWER
Packaging: Cut Tape (CT)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SSC, UART/USART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 29V
Controller Series: TLE9944
Program Memory Type: FLASH (72kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M23
Supplier Device Package: PG-TSDSO-32-1
Number of I/O: 8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
2+285.04 грн
10+208.26 грн
25+191.66 грн
100+162.71 грн
250+154.52 грн
500+149.60 грн
1000+143.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSC3M3EDACQ1XQLA1 PSC3M3EDACQ1XQLA1 Infineon Technologies Infineon-PSOC_CONTROL_C3_PSC3P2XD_PSC3M3XD_datasheet-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c93dda25b01941a4395247a2e Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+412.76 грн
10+305.38 грн
25+282.28 грн
100+241.10 грн
250+229.74 грн
500+222.89 грн
1600+210.51 грн
В кошику  од. на суму  грн.
PSC3P2EDACQ1XQLA1 PSC3P2EDACQ1XQLA1 Infineon Technologies Infineon-PSOC_CONTROL_C3_PSC3P2XD_PSC3M3XD_datasheet-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c93dda25b01941a4395247a2e Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, SmartCard, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)
1+420.55 грн
10+310.33 грн
25+286.81 грн
100+244.86 грн
250+233.28 грн
500+226.30 грн
В кошику  од. на суму  грн.
PSC3P2FDS2ACQ1XQLA1 PSC3P2FDS2ACQ1XQLA1 Infineon Technologies Infineon-PSOC_CONTROL_C3_PSC3P2XD_PSC3M3XD_datasheet-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c93dda25b01941a4395247a2e Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, SmartCard, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+429.90 грн
10+317.98 грн
25+293.92 грн
100+251.04 грн
250+239.22 грн
500+232.09 грн
1600+219.20 грн
В кошику  од. на суму  грн.
PSC3M5EDACQ1XQLA1 PSC3M5EDACQ1XQLA1 Infineon Technologies Infineon-PSOC_CONTROL_C3_MainLine_PSC3P5XD_PSC3M5XD_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c93dda25b01941ab1660d7a3b Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
1+478.96 грн
10+355.63 грн
25+329.23 грн
100+281.67 грн
250+268.65 грн
500+260.81 грн
1600+246.53 грн
В кошику  од. на суму  грн.
PSC3P5FDS2ACQ1XQLA1 PSC3P5FDS2ACQ1XQLA1 Infineon Technologies Infineon-PSOC_CONTROL_C3_MainLine_PSC3P5XD_PSC3M5XD_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c93dda25b01941ab1660d7a3b Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
на замовлення 1599 шт:
термін постачання 21-31 дні (днів)
1+482.86 грн
10+358.03 грн
25+331.45 грн
100+283.60 грн
250+270.51 грн
500+262.62 грн
В кошику  од. на суму  грн.
IMT65R040M2HXUMA1 Infineon-IMT65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3414e43d08
IMT65R040M2HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.7A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IMT65R040M2HXUMA1 Infineon-IMT65R040M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3414e43d08
IMT65R040M2HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58.7A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 22.9A, 20V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IMT65R050M2HXUMA1 Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11
IMT65R050M2HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IMT65R050M2HXUMA1 Infineon-IMT65R050M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934e3493303d11
IMT65R050M2HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48.1A (Tc)
Rds On (Max) @ Id, Vgs: 46mOhm @ 18.2A, 20V
Power Dissipation (Max): 237W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IMT65R075M2HXUMA1 infineon-imt65r075m2h-datasheet-en.pdf
IMT65R075M2HXUMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 650V 33.7A HSOF-8
Packaging: Tube
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.7A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 11.9A, 18V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 2.4mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 14.9 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 516 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
AUIRF9540N AUIRF9540N.pdf
AUIRF9540N
Виробник: Infineon Technologies
Description: MOSFET P-CH 100V 23A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 117mOhm @ 11A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SPP02N60C3XKSA1 Infineon-SPP02N60C3-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42d5b09485f
SPP02N60C3XKSA1
Виробник: Infineon Technologies
Description: LOW POWER_LEGACY
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
на замовлення 73020 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
429+46.92 грн
Мінімальне замовлення: 429
В кошику  од. на суму  грн.
SPB02N60C3ATMA1 SPB02N60C3_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42e153f494d
SPB02N60C3ATMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 1.8A TO263-3
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 80µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
322+62.33 грн
Мінімальне замовлення: 322
В кошику  од. на суму  грн.
ITS6080SEPDXUMA1 infineon-its6080s-ep-d-datasheet-en.pdf
ITS6080SEPDXUMA1
Виробник: Infineon Technologies
Description: PROFET
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 80mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 60V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+113.84 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ITS6080SEPDXUMA1 infineon-its6080s-ep-d-datasheet-en.pdf
ITS6080SEPDXUMA1
Виробник: Infineon Technologies
Description: PROFET
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: Logic
Switch Type: General Purpose
Output Configuration: High Side
Rds On (Typ): 80mOhm (Max)
Input Type: Non-Inverting
Voltage - Load: 60V
Voltage - Supply (Vcc/Vdd): 60V
Current - Output (Max): 8A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TSDSO-14
Fault Protection: Current Limiting (Adjustable), Over Temperature, Over Voltage
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+208.72 грн
10+150.74 грн
25+138.17 грн
100+116.67 грн
250+110.48 грн
500+106.75 грн
1000+101.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRF1405ZSTRLPBF IRF1405Z%28S%2CL%29PbF.pdf
IRF1405ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4780 pF @ 25 V
товару немає в наявності
В кошику  од. на суму  грн.
AUIRF1405 AUIRF1405.pdf
AUIRF1405
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 101A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5480 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
AUIRFZ44N AUIRFZ44N.pdf
AUIRFZ44N
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
S27KL0642DPBHI023 Infineon-S27KL0642_S27KS0642_3.0_V_1.8_V_64_Mb_(8_MB)_HyperRAM_Self-Refresh_DRAM-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee8a1c47164
S27KL0642DPBHI023
Виробник: Infineon Technologies
Description: IC PSRAM 64MBIT HYPERBUS 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 166 MHz
Memory Format: PSRAM
Supplier Device Package: 24-FBGA (6x8)
Write Cycle Time - Word, Page: 36ns
Memory Interface: HyperBus
Access Time: 36 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
на замовлення 3399 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+296.72 грн
10+266.38 грн
25+258.46 грн
50+236.97 грн
100+231.37 грн
250+224.00 грн
500+214.90 грн
1000+209.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IQE018N06NM6SCATMA1 infineon-iqe018n06nm6sc-datasheet-en.pdf
IQE018N06NM6SCATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 51µA
Supplier Device Package: PG-WHSON-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 30 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+253.11 грн
10+158.99 грн
100+110.96 грн
500+84.90 грн
1000+84.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISC019N10NM8ATMA1
Виробник: Infineon Technologies
Description: ISC019N10NM8ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
товару немає в наявності
В кошику  од. на суму  грн.
ISC019N10NM8ATMA1
Виробник: Infineon Technologies
Description: ISC019N10NM8ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
товару немає в наявності
В кошику  од. на суму  грн.
ISC019N10NM8SCATMA1 ISC019N10NM8SCATMA1.pdf
ISC019N10NM8SCATMA1
Виробник: Infineon Technologies
Description: ISC019N10NM8SCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
ISC019N10NM8SCATMA1 ISC019N10NM8SCATMA1.pdf
ISC019N10NM8SCATMA1
Виробник: Infineon Technologies
Description: ISC019N10NM8SCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.93mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 268W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
S78HS512TC0BHB013 Infineon-S78HS512TC0_S78HL512TC0_512Mb_SEMPER_Flash_and_64Mb_HYPERRAM_2.0_Octal_interface_multi-chip_package_1.8_V_3.0_V-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8386267f0183a234ee365d4b&da=t
S78HS512TC0BHB013
Виробник: Infineon Technologies
Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S78HS512TC0BHB013 Infineon-S78HS512TC0_S78HL512TC0_512Mb_SEMPER_Flash_and_64Mb_HYPERRAM_2.0_Octal_interface_multi-chip_package_1.8_V_3.0_V-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c8386267f0183a234ee365d4b&da=t
S78HS512TC0BHB013
Виробник: Infineon Technologies
Description: IC FLASH RAM 512MBIT SPI 24FBGA
Packaging: Cut Tape (CT)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Type: Non-Volatile, Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH, RAM
Clock Frequency: 200 MHz
Memory Format: FLASH, RAM
Supplier Device Package: 24-FBGA (8x8)
Memory Interface: SPI - Octal I/O
DigiKey Programmable: Not Verified
на замовлення 1940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1630.03 грн
10+1454.17 грн
25+1408.21 грн
50+1289.20 грн
100+1257.16 грн
250+1215.49 грн
500+1165.18 грн
В кошику  од. на суму  грн.
IGLR65R200D2XUMA1 infineon-iglr65r200d2-datasheet-en.pdf
IGLR65R200D2XUMA1
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+53.22 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IGLR65R200D2XUMA1 infineon-iglr65r200d2-datasheet-en.pdf
IGLR65R200D2XUMA1
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 9.2A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 2.1A
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 710µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 1.26 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 91 pF @ 400 V
на замовлення 6632 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+190.03 грн
10+118.04 грн
100+81.06 грн
500+61.22 грн
1000+57.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
GS0650111LMRXUSA1 Infineon-GS-065-011-1-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e51606b81513c
GS0650111LMRXUSA1
Виробник: Infineon Technologies
Description: GS-065-011-1-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
250+163.02 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS0650111LMRXUSA1 Infineon-GS-065-011-1-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e51606b81513c
GS0650111LMRXUSA1
Виробник: Infineon Technologies
Description: GS-065-011-1-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 3.2A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 2.4mA
Supplier Device Package: 8-PDFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 400 V
на замовлення 462 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+381.61 грн
10+244.94 грн
100+175.32 грн
В кошику  од. на суму  грн.
IGT65R045D2ATMA1 infineon-igt65r045d2-datasheet-en.pdf
IGT65R045D2ATMA1
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGT65R045D2ATMA1 infineon-igt65r045d2-datasheet-en.pdf
IGT65R045D2ATMA1
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 38A 8PSFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HSOF-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
на замовлення 1521 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+566.97 грн
10+371.53 грн
100+272.63 грн
500+251.50 грн
В кошику  од. на суму  грн.
IGLT65R045D2ATMA1 infineon-iglt65r045d2-datasheet-en.pdf
IGLT65R045D2ATMA1
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 38A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IGLT65R045D2ATMA1 infineon-iglt65r045d2-datasheet-en.pdf
IGLT65R045D2ATMA1
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 38A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 10A
Power Dissipation (Max): 124W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3.3mA
Supplier Device Package: PG-HDSOP-16-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 400 V
на замовлення 1188 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+566.97 грн
10+371.53 грн
100+272.63 грн
500+251.50 грн
В кошику  од. на суму  грн.
GS0650182LMRXUSA1 Infineon-GS-065-018-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e516072455144
GS0650182LMRXUSA1
Виробник: Infineon Technologies
Description: GS-065-018-2-L-MR
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
250+283.60 грн
Мінімальне замовлення: 250
В кошику  од. на суму  грн.
GS0650182LMRXUSA1 Infineon-GS-065-018-2-L-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018e516072455144
GS0650182LMRXUSA1
Виробник: Infineon Technologies
Description: GS-065-018-2-L-MR
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 5.5A, 6V
Vgs(th) (Max) @ Id: 2.6V @ 4.8mA
Supplier Device Package: 8-PDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 132 pF @ 400 V
на замовлення 283 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+620.70 грн
10+408.28 грн
100+301.63 грн
В кошику  од. на суму  грн.
FP25R12W2T4BOMA1 Infineon-FP25R12W2T4-DS-v02_02-en_jp.pdf?fileId=db3a30433dfcb54c013dfda180a3021c
Виробник: Infineon Technologies
Description: FP25R12 - IGBT MODULE
Packaging: Bulk
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+2594.67 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
S25FL512SAGMFAG13 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SAGMFAG13
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
IPTC017N10NM5LF2ATMA1 Infineon-IPTC017N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d07092601cc8
IPTC017N10NM5LF2ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
IPTC017N10NM5LF2ATMA1 Infineon-IPTC017N10NM5LF2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194d07092601cc8
IPTC017N10NM5LF2ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 321A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 150A, 15V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 280µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 50 V
на замовлення 1620 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+468.06 грн
10+303.21 грн
100+219.82 грн
500+194.60 грн
В кошику  од. на суму  грн.
IMSQ120R026M2HHXUMA1 DS_IMSQ120R026M2HH_v1.00_en.pdf
IMSQ120R026M2HHXUMA1
Виробник: Infineon Technologies
Description: SICFET 2N-CH 1200V 83A HDSOP16
Packaging: Tape & Reel (TR)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 410W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 800V
Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 18V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-16-221
товару немає в наявності
В кошику  од. на суму  грн.
IMSQ120R026M2HHXUMA1 DS_IMSQ120R026M2HH_v1.00_en.pdf
IMSQ120R026M2HHXUMA1
Виробник: Infineon Technologies
Description: SICFET 2N-CH 1200V 83A HDSOP16
Packaging: Cut Tape (CT)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 410W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 800V
Rds On (Max) @ Id, Vgs: 26mOhm @ 27A, 18V
Gate Charge (Qg) (Max) @ Vgs: 54nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 8.6mA
Supplier Device Package: PG-HDSOP-16-221
на замовлення 653 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1580.97 грн
10+1097.04 грн
100+1013.73 грн
В кошику  од. на суму  грн.
IPC020N10L3X1SA1 DS_IPC020N10L3_2_5.pdf?fileId=5546d4614755559a01477c39579c626c
IPC020N10L3X1SA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 1A SAWN ON FOIL
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tj)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 12µA
Supplier Device Package: Sawn on foil
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Drain to Source Voltage (Vdss): 100 V
товару немає в наявності
В кошику  од. на суму  грн.
BGS12PN10E6327XTSA1 Infineon-BGS12PN10-DS-v01_00-EN.pdf?fileId=5546d46256fb43b30157565d296541b1
BGS12PN10E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SPDT 6GHZ TSNP10-1
Packaging: Bulk
Package / Case: 10-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SPDT
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.6V
Insertion Loss: 0.6dB
Frequency Range: 500MHz ~ 6GHz
Test Frequency: 6GHz
Isolation: 20dB
Supplier Device Package: PG-TSNP-10-1
на замовлення 50 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
50+397.14 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
AUIRF1404STRL auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374
AUIRF1404STRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
AUIRF1404 auirf1404.pdf?fileId=5546d462533600a4015355a8c82d1372
AUIRF1404
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
AUIRF1404S auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374
AUIRF1404S
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
REFDOORCONTROLTOBO1 infineon-door-control-module-reference-design-preview-usermanual-en.pdf
REFDOORCONTROLTOBO1
Виробник: Infineon Technologies
Description: REFDOORCONTROLTOBO1
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTM90x1, BTS7200, TLE9166EQ, TLE9562
Primary Attributes: 5.5V ~ 20V Supply
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+21843.03 грн
В кошику  од. на суму  грн.
AUIRFC8407TR
Виробник: Infineon Technologies
Description: AUTOMOTIVE POWER MOSFET
Packaging: Bulk
на замовлення 116606 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
363+54.94 грн
Мінімальне замовлення: 363
В кошику  од. на суму  грн.
EVAL2KWSICIHTOBO1
Виробник: Infineon Technologies
Description: EVAL2KWSICIHTOBO1
Packaging: Box
Function: MOSFET
Type: Power Management
Contents: Board(s)
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+22244.89 грн
В кошику  од. на суму  грн.
IAUMN10S5N017GAUMA1 Infineon-IAUMN10S5N017G-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8eeb092c018f2f3c03b8111a
IAUMN10S5N017GAUMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tj)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 100A, 10V
Power Dissipation (Max): 307W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 215µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12514 pF @ 50 V
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+267.13 грн
10+194.61 грн
25+178.94 грн
100+151.74 грн
250+144.02 грн
500+139.37 грн
1000+133.32 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRFZ34N AUIRFZ34N.pdf
AUIRFZ34N
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 29A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 16A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IR21531PBF description ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
IR21531PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
на замовлення 23526 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
140+141.65 грн
Мінімальне замовлення: 140
В кошику  од. на суму  грн.
CY9BF217TBGL-GK7E1 Infineon-CY9B210T_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ede8ca16378&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF217TBGL-GK7E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 768KB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 144MHz
Program Memory Size: 768KB (768K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 32x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, Ethernet, I2C, LINbus, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 154
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
REFAUDIOGANB750WTOBO1 REFAUDIOGANB750WTOBO1
REFAUDIOGANB750WTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IRS20957S
Packaging: Box
Output Type: 1-Channel (Mono) or 2-Channel (Stereo)
Amplifier Type: Class D
Contents: Board(s)
Voltage - Supply: ±36V
Max Output Power x Channels @ Load: 750W x 1 @ 4Ohm; 375W x 2 @ 2Ohm
Utilized IC / Part: IRS20957S
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+23327.42 грн
В кошику  од. на суму  грн.
IM241S6S1BALMA1 Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88
IM241S6S1BALMA1
Виробник: Infineon Technologies
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
на замовлення 237 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+408.87 грн
15+290.88 грн
30+274.93 грн
105+237.31 грн
В кошику  од. на суму  грн.
IM241S6S1JALMA1 Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88
IM241S6S1JALMA1
Виробник: Infineon Technologies
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
на замовлення 224 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+408.87 грн
15+290.88 грн
30+274.93 грн
105+237.31 грн
В кошику  од. на суму  грн.
IM241M6S1BALMA1 Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88
IM241M6S1BALMA1
Виробник: Infineon Technologies
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
на замовлення 232 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+443.92 грн
15+317.18 грн
30+299.98 грн
105+259.25 грн
В кошику  од. на суму  грн.
IM241L6S1BALMA1 Infineon-IM241_Series_4A-DataSheet-v01_06-EN.pdf?fileId=8ac78c8c81ae03fc0181f110aa4c7f88
IM241L6S1BALMA1
Виробник: Infineon Technologies
Description: IGBT IPM 600V 4A 23-PWRSMD MOD
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2000Vrms
Current: 4 A
Voltage: 600 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+487.53 грн
15+349.83 грн
30+331.16 грн
105+286.58 грн
В кошику  од. на суму  грн.
TLE9944EQA40XUMA1 Infineon-TLE994x_5x-ProductOverview-ProductOverview-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01953d558e1e6e8e
TLE9944EQA40XUMA1
Виробник: Infineon Technologies
Description: EMBEDDED_POWER
Packaging: Cut Tape (CT)
Package / Case: 32-TSSOP (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Interface: LINbus, SSC, UART/USART
RAM Size: 6K x 8
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 29V
Controller Series: TLE9944
Program Memory Type: FLASH (72kB)
Applications: BLDC Controller
Core Processor: ARM® Cortex®-M23
Supplier Device Package: PG-TSDSO-32-1
Number of I/O: 8
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+285.04 грн
10+208.26 грн
25+191.66 грн
100+162.71 грн
250+154.52 грн
500+149.60 грн
1000+143.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PSC3M3EDACQ1XQLA1 Infineon-PSOC_CONTROL_C3_PSC3P2XD_PSC3M3XD_datasheet-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c93dda25b01941a4395247a2e
PSC3M3EDACQ1XQLA1
Виробник: Infineon Technologies
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+412.76 грн
10+305.38 грн
25+282.28 грн
100+241.10 грн
250+229.74 грн
500+222.89 грн
1600+210.51 грн
В кошику  од. на суму  грн.
PSC3P2EDACQ1XQLA1 Infineon-PSOC_CONTROL_C3_PSC3P2XD_PSC3M3XD_datasheet-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c93dda25b01941a4395247a2e
PSC3P2EDACQ1XQLA1
Виробник: Infineon Technologies
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, SmartCard, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
на замовлення 1590 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+420.55 грн
10+310.33 грн
25+286.81 грн
100+244.86 грн
250+233.28 грн
500+226.30 грн
В кошику  од. на суму  грн.
PSC3P2FDS2ACQ1XQLA1 Infineon-PSOC_CONTROL_C3_PSC3P2XD_PSC3M3XD_datasheet-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c93dda25b01941a4395247a2e
PSC3P2FDS2ACQ1XQLA1
Виробник: Infineon Technologies
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, SmartCard, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+429.90 грн
10+317.98 грн
25+293.92 грн
100+251.04 грн
250+239.22 грн
500+232.09 грн
1600+219.20 грн
В кошику  од. на суму  грн.
PSC3M5EDACQ1XQLA1 Infineon-PSOC_CONTROL_C3_MainLine_PSC3P5XD_PSC3M5XD_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c93dda25b01941ab1660d7a3b
PSC3M5EDACQ1XQLA1
Виробник: Infineon Technologies
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+478.96 грн
10+355.63 грн
25+329.23 грн
100+281.67 грн
250+268.65 грн
500+260.81 грн
1600+246.53 грн
В кошику  од. на суму  грн.
PSC3P5FDS2ACQ1XQLA1 Infineon-PSOC_CONTROL_C3_MainLine_PSC3P5XD_PSC3M5XD_datasheet-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c93dda25b01941ab1660d7a3b
PSC3P5FDS2ACQ1XQLA1
Виробник: Infineon Technologies
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: PG-TQFP-64-22
Number of I/O: 39
на замовлення 1599 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+482.86 грн
10+358.03 грн
25+331.45 грн
100+283.60 грн
250+270.51 грн
500+262.62 грн
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 199 398 597 778 779 780 781 782 783 784 785 786 787 788 796 995 1194 1393 1592 1791 1990 1992  [ Наступна Сторінка >> ]