Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (149649) > Сторінка 773 з 2495
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IGLD65R080D2AUMA1 | Infineon Technologies |
Description: HV GAN DISCRETESPackaging: Tape & Reel (TR) Package / Case: 8-LDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1.8mA Supplier Device Package: PG-LSON-8-2 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V |
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IGLD65R080D2AUMA1 | Infineon Technologies |
Description: HV GAN DISCRETESPackaging: Cut Tape (CT) Package / Case: 8-LDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 1.8mA Supplier Device Package: PG-LSON-8-2 Vgs (Max): -10V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V |
на замовлення 2904 шт: термін постачання 21-31 дні (днів) |
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AUIRB24427STR | Infineon Technologies |
Description: IC GATE DRVR LOW-SIDE 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-DSO-8-9 Rise / Fall Time (Typ): 33ns, 33ns (Max) Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 6A, 6A DigiKey Programmable: Not Verified |
на замовлення 6992 шт: термін постачання 21-31 дні (днів) |
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IKQ40N120CT2XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 80A TO247-3Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A Supplier Device Package: PG-TO247-3-46 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 32ns/328ns Switching Energy: 3.1mJ (on), 2.9mJ (off) Test Condition: 600V, 40A, 12Ohm, 15V Gate Charge: 190 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 500 W |
на замовлення 1908 шт: термін постачання 21-31 дні (днів) |
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BGS13SN8E6327XTSA1 | Infineon Technologies |
Description: IC RF SWITCH SP3T 6GHZ TSNP8-1Packaging: Bulk Package / Case: 8-XFQFN Impedance: 50Ohm Mounting Type: Surface Mount Circuit: SP3T RF Type: General Purpose Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.8V ~ 3.4V Insertion Loss: 0.65dB Frequency Range: 100MHz ~ 6GHz Test Frequency: 5.725GHz Isolation: 15dB Supplier Device Package: PG-TSNP-8-1 |
на замовлення 23068 шт: термін постачання 21-31 дні (днів) |
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FF300R12ME4PB11BPSA1 | Infineon Technologies |
Description: IGBT MOD 1200V 600A 20MWPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A NTC Thermistor: Yes Supplier Device Package: Module IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Cutoff (Max): 3 mA Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V |
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SPA21N50C3XKSA1 | Infineon Technologies |
Description: MOSFET N-CH 560V 21A TO220-FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V Power Dissipation (Max): 34.5W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: PG-TO220-3-31 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 560 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
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NBT2000A8K0T4USON8XTMA5 | Infineon Technologies |
Description: NBT2000A8K0T4USON8XTMA5Packaging: Tape & Reel (TR) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Frequency: 13.56MHz Type: RFID Reader Operating Temperature: -40°C ~ 105°C (TA) Standards: ISO 14443-B, NFC Supplier Device Package: PG-USON-8-8 |
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NBT2000A8K0T4USON8XTMA5 | Infineon Technologies |
Description: NBT2000A8K0T4USON8XTMA5Packaging: Cut Tape (CT) Package / Case: 8-UDFN Exposed Pad Mounting Type: Surface Mount Frequency: 13.56MHz Type: RFID Reader Operating Temperature: -40°C ~ 105°C (TA) Standards: ISO 14443-B, NFC Supplier Device Package: PG-USON-8-8 |
на замовлення 247 шт: термін постачання 21-31 дні (днів) |
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| ESD175B1W01005E6327XTSA1 | Infineon Technologies |
Description: TVS DIODES Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | |||||||||||||||||
| ESD175B1W01005E6327XTSA1 | Infineon Technologies |
Description: TVS DIODES Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CY6264-70SNC | Infineon Technologies |
Description: IC SRAM 64KBIT PARALLEL 28SOICPackaging: Tube Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-SOIC Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | ||||||||||||||||
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CY6264-70SNXC | Infineon Technologies |
Description: IC SRAM 64KBIT PARALLEL 28SOICPackaging: Tube Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 64Kbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 4.5V ~ 5.5V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 28-SOIC Write Cycle Time - Word, Page: 70ns Memory Interface: Parallel Access Time: 70 ns Memory Organization: 8K x 8 DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | ||||||||||||||||
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IRF540ZLPBF | Infineon Technologies |
Description: MOSFET N-CH 100V 36A TO262Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V Power Dissipation (Max): 92W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V |
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В кошику од. на суму грн. | ||||||||||||||||
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IRS2453DSPBF | Infineon Technologies |
Description: IC GATE DRVR FULL-BRIDGE 14SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C (TJ) Voltage - Supply: 10V ~ 15.6V Input Type: RC Input Circuit High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-SOIC Rise / Fall Time (Typ): 120ns, 50ns Channel Type: Synchronous Driven Configuration: Full-Bridge Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 4.7V, 9.3V Current - Peak Output (Source, Sink): 180mA, 260mA DigiKey Programmable: Not Verified |
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IRF7311TR | Infineon Technologies |
Description: MOSFET 2N-CH 20V 6.6A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.6A Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 700mV @ 250µA Supplier Device Package: 8-SO |
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CY8C4147AZQT415XQSA1 | Infineon Technologies |
Description: HMI-GROWTH PSOC4Packaging: Tray Package / Case: 64-LQFP Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 16x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT Supplier Device Package: 64-TQFP (10x10) Number of I/O: 53 |
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| PSC3M5EDLHQ1XQLA1 | Infineon Technologies |
Description: INDUSTRIAL-PSOC C3 Packaging: Tray Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 199MHz Program Memory Size: 128KB (128K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M33F Data Converters: A/D 18x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 64-VQFN (8x8) Number of I/O: 39 |
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В кошику од. на суму грн. | |||||||||||||||||
| CYT2CL7BXAQ0AZSGSHQLA1 | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPH Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CYT2CL7BXAQ0AZSGSTHUYA1 | Infineon Technologies |
Description: TRAVEO-2 CLUST.2.5DGRAPH Packaging: Tape & Reel (TR) |
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В кошику од. на суму грн. | |||||||||||||||||
| FS1150R08A8P3CHPSA1 | Infineon Technologies |
Description: FS1150R08A8P3CHPSA1Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Phase Inverter Operating Temperature: -40°C ~ 175°C (TJ) Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A NTC Thermistor: No Supplier Device Package: AG-HDG2XT-7611 Current - Collector (Ic) (Max): 600 A Voltage - Collector Emitter Breakdown (Max): 750 V Power - Max: 1 kW Current - Collector Cutoff (Max): 1 mA Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V |
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| 841000037001 | Infineon Technologies |
Description: IC MCU 32BIT 100LQFP Packaging: Tray DigiKey Programmable: Not Verified |
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В кошику од. на суму грн. | |||||||||||||||||
| CYT4BB5CXBQ1AEEGSHQLA1 | Infineon Technologies |
Description: TRAVEO-2 BODY HIGH-END Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CYT4BB5CXBQ1AEEGSTHUYA1 | Infineon Technologies |
Description: TRAVEO-2 BODY HIGH-END Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CYT4BB7CXBQ1AEEGSHQLA1 | Infineon Technologies |
Description: TRAVEO-2 BODY HIGH-END Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CYT4BB7CXBQ1AEEGSTHUYA1 | Infineon Technologies |
Description: TRAVEO-2 BODY HIGH-END Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CYT4BB8CXBQ1AEEGSHQLA1 | Infineon Technologies |
Description: TRAVEO-2 BODY HIGH-END Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CYT4BB8CXBQ1AEEGSTHUYA1 | Infineon Technologies |
Description: TRAVEO-2 BODY HIGH-END Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CYT4BBBCXBQ1BZEGSTXUMA1 | Infineon Technologies |
Description: TRAVEO-2 BODY HIGH-END Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CYT4BBBCXBQ1BZEGSXQLA1 | Infineon Technologies |
Description: TRAVEO-2 BODY HIGH-END Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CYT4BF8CXDQ0AEEGSHQLA1 | Infineon Technologies |
Description: TRAVEO-2 BODY HIGH-ENDPackaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CYT4BF8CXDQ0AEEGSTHUYA1 | Infineon Technologies |
Description: TRAVEO-2 BODY HIGH-ENDPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CYT4BFBCXDQ0BZEGSTXUMA1 | Infineon Technologies |
Description: TRAVEO-2 BODY HIGH-ENDPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CYT4BFBCXDQ0BZEGSXQLA1 | Infineon Technologies |
Description: TRAVEO-2 BODY HIGH-ENDPackaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CYT4BFCCXDQ0BZEGSXQLA1 | Infineon Technologies |
Description: TRAVEO-2 BODY HIGH-ENDPackaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| CYT4BFCCXDQ0BZEGSTXUMA1 | Infineon Technologies |
Description: TRAVEO-2 BODY HIGH-ENDPackaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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CY8C20424-12LQXIT | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 32QFNPackaging: Cut Tape (CT) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 12MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI Peripherals: LVD, POR, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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GS61008TMRXUSA1 | Infineon Technologies |
Description: GS61008T-MRPackaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V Vgs(th) (Max) @ Id: 1.3V @ 7mA Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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GS61008TMRXUSA1 | Infineon Technologies |
Description: GS61008T-MRPackaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V Vgs(th) (Max) @ Id: 1.3V @ 7mA Drive Voltage (Max Rds On, Min Rds On): 6V Vgs (Max): +7V, -10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V |
на замовлення 1217 шт: термін постачання 21-31 дні (днів) |
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IMZA65R015M2HXKSA1 | Infineon Technologies |
Description: SILICON CARBIDE MOSFETPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 103A (Tc) Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 13mA Supplier Device Package: PG-TO247-4-8 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V |
на замовлення 134 шт: термін постачання 21-31 дні (днів) |
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IMZA65R060M2HXKSA1 | Infineon Technologies |
Description: IMZA65R060M2HXKSA1Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32.8A (Tc) Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 3.1mA Supplier Device Package: PG-TO247-4-8 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V |
на замовлення 119 шт: термін постачання 21-31 дні (днів) |
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IMZA65R033M2HXKSA1 | Infineon Technologies |
Description: IMZA65R033M2HXKSA1Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V Power Dissipation (Max): 194W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 5.7mA Supplier Device Package: PG-TO247-4-8 Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V |
на замовлення 110 шт: термін постачання 21-31 дні (днів) |
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IGC025S08S1XTMA1 | Infineon Technologies |
Description: MV GAN DISCRETESPackaging: Tape & Reel (TR) Package / Case: 6-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 86A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V Power Dissipation (Max): 3.3W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 10mA Supplier Device Package: PG-TSON-6-2 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±6.5V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IGC025S08S1XTMA1 | Infineon Technologies |
Description: MV GAN DISCRETESPackaging: Cut Tape (CT) Package / Case: 6-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 86A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V Power Dissipation (Max): 3.3W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 10mA Supplier Device Package: PG-TSON-6-2 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±6.5V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 40 V |
на замовлення 4349 шт: термін постачання 21-31 дні (днів) |
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CY2309ZXI-1HT | Infineon Technologies |
Description: IC FANOUT BUFFER 16TSSOPPackaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Output: LVCMOS Frequency - Max: 133.33MHz Type: Fanout Buffer (Distribution), Zero Delay Buffer Input: LVCMOS, LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:9 Differential - Input:Output: No/No Supplier Device Package: 16-TSSOP PLL: Yes with Bypass Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
на замовлення 2149 шт: термін постачання 21-31 дні (днів) |
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AUIRLZ24NSTRL | Infineon Technologies |
Description: MOSFET N-CH 55V 18A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AUIRLZ24NS | Infineon Technologies |
Description: MOSFET N-CH 55V 18A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V Power Dissipation (Max): 3.8W (Ta), 45W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE9189QUWXUMA1 | Infineon Technologies |
Description: TLE9189QUWXUMA1Packaging: Tape & Reel (TR) Package / Case: 48-TQFP Exposed Pad Mounting Type: Surface Mount Function: Controller - Current Management Interface: SPI Operating Temperature: -40°C ~ 175°C Output Configuration: Half Bridge (3) Voltage - Supply: 4.2V ~ 36V Technology: NMOS Voltage - Load: 40V Supplier Device Package: PG-TQFP-48-10 Motor Type - AC, DC: Brushless DC (BLDC) Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE9189QUWXUMA1 | Infineon Technologies |
Description: TLE9189QUWXUMA1Packaging: Cut Tape (CT) Package / Case: 48-TQFP Exposed Pad Mounting Type: Surface Mount Function: Controller - Current Management Interface: SPI Operating Temperature: -40°C ~ 175°C Output Configuration: Half Bridge (3) Voltage - Supply: 4.2V ~ 36V Technology: NMOS Voltage - Load: 40V Supplier Device Package: PG-TQFP-48-10 Motor Type - AC, DC: Brushless DC (BLDC) Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE9009DQUXUMA1 | Infineon Technologies |
Description: TLE9009DQUXUMA1Packaging: Tape & Reel (TR) Package / Case: 48-TQFP Exposed Pad Number of Cells: 9 Mounting Type: Surface Mount Function: Multi-Function Controller Operating Temperature: -40°C ~ 150°C (TJ) Battery Chemistry: Lithium Ion Supplier Device Package: PG-TQFP-48-9 Fault Protection: Over Current Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE9009DQUXUMA1 | Infineon Technologies |
Description: TLE9009DQUXUMA1Packaging: Cut Tape (CT) Package / Case: 48-TQFP Exposed Pad Number of Cells: 9 Mounting Type: Surface Mount Function: Multi-Function Controller Operating Temperature: -40°C ~ 150°C (TJ) Battery Chemistry: Lithium Ion Supplier Device Package: PG-TQFP-48-9 Fault Protection: Over Current Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2350 шт: термін постачання 21-31 дні (днів) |
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TLE9189QUWSXUMA1 | Infineon Technologies |
Description: BLDC_MOTOR_CONTROL Packaging: Tape & Reel (TR) Package / Case: 48-TQFP Exposed Pad Mounting Type: Surface Mount Function: Controller - Current Management Interface: PWM, SPI Operating Temperature: -40°C ~ 175°C Output Configuration: Half Bridge (3) Voltage - Supply: 4.2V ~ 36V Applications: General Purpose Technology: NMOS Voltage - Load: 4.2V ~ 36V Supplier Device Package: PG-TQFP-48-10 Motor Type - AC, DC: Brushless DC (BLDC) Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SLB9672XU20FW1624XTMA1 | Infineon Technologies |
Description: OPTIGA TPM SLB 9672XU2.0 FW16.24Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SLB9672XU20FW1624XTMA1 | Infineon Technologies |
Description: OPTIGA TPM SLB 9672XU2.0 FW16.24Packaging: Cut Tape (CT) |
на замовлення 2836 шт: термін постачання 21-31 дні (днів) |
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SLB9672XU20FW1524XTMA1 | Infineon Technologies |
Description: OPTIGA TPM SLB 9672XU2.0 FW15.24Packaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V Controller Series: OPTIGA™ TPM Program Memory Type: NVM (51kB) Applications: Trusted Platform Module (TPM) Core Processor: 32-Bit Supplier Device Package: PG-UQFN-32-1 Number of I/O: 3 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SLB9672XU20FW1524XTMA1 | Infineon Technologies |
Description: OPTIGA TPM SLB 9672XU2.0 FW15.24Packaging: Cut Tape (CT) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V Controller Series: OPTIGA™ TPM Program Memory Type: NVM (51kB) Applications: Trusted Platform Module (TPM) Core Processor: 32-Bit Supplier Device Package: PG-UQFN-32-1 Number of I/O: 3 |
на замовлення 4760 шт: термін постачання 21-31 дні (днів) |
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SLB9672AU20FW1624XTMA1 | Infineon Technologies |
Description: OPTIGA TPM SLB 9672AU2.0 FW16.24Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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SLB9672AU20FW1624XTMA1 | Infineon Technologies |
Description: OPTIGA TPM SLB 9672AU2.0 FW16.24Packaging: Cut Tape (CT) |
на замовлення 4166 шт: термін постачання 21-31 дні (днів) |
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IRG8P25N120KDPBF | Infineon Technologies |
Description: IGBT 1200V 40A TO-247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 20ns/170ns Switching Energy: 800µJ (on), 900µJ (off) Test Condition: 600V, 15A, 10Ohm, 15V Gate Charge: 135 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 180 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| CYT2BL5CXAQ0AZEGSHQLA1 | Infineon Technologies |
Description: TRAVEO-2 BODY ENTRYLEVELPackaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. |
| IGLD65R080D2AUMA1 |
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Виробник: Infineon Technologies
Description: HV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
Description: HV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
товару немає в наявності
В кошику
од. на суму грн.
| IGLD65R080D2AUMA1 |
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Виробник: Infineon Technologies
Description: HV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
Description: HV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 8-LDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 1.8mA
Supplier Device Package: PG-LSON-8-2
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 3.3 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 400 V
на замовлення 2904 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 397.93 грн |
| 10+ | 255.96 грн |
| 100+ | 183.79 грн |
| 500+ | 168.31 грн |
| AUIRB24427STR |
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Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-9
Rise / Fall Time (Typ): 33ns, 33ns (Max)
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: PG-DSO-8-9
Rise / Fall Time (Typ): 33ns, 33ns (Max)
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 6A, 6A
DigiKey Programmable: Not Verified
на замовлення 6992 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 163+ | 129.63 грн |
| IKQ40N120CT2XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/328ns
Switching Energy: 3.1mJ (on), 2.9mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
Description: IGBT TRENCH FS 1200V 80A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 40A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/328ns
Switching Energy: 3.1mJ (on), 2.9mJ (off)
Test Condition: 600V, 40A, 12Ohm, 15V
Gate Charge: 190 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 500 W
на замовлення 1908 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 74+ | 289.86 грн |
| BGS13SN8E6327XTSA1 |
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Виробник: Infineon Technologies
Description: IC RF SWITCH SP3T 6GHZ TSNP8-1
Packaging: Bulk
Package / Case: 8-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP3T
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.4V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 5.725GHz
Isolation: 15dB
Supplier Device Package: PG-TSNP-8-1
Description: IC RF SWITCH SP3T 6GHZ TSNP8-1
Packaging: Bulk
Package / Case: 8-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP3T
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.4V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 5.725GHz
Isolation: 15dB
Supplier Device Package: PG-TSNP-8-1
на замовлення 23068 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1235+ | 16.93 грн |
| FF300R12ME4PB11BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 1200V 600A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
Description: IGBT MOD 1200V 600A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 18.5 nF @ 25 V
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од. на суму грн.
| SPA21N50C3XKSA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 560V 21A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: MOSFET N-CH 560V 21A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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В кошику
од. на суму грн.
| NBT2000A8K0T4USON8XTMA5 |
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Виробник: Infineon Technologies
Description: NBT2000A8K0T4USON8XTMA5
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Type: RFID Reader
Operating Temperature: -40°C ~ 105°C (TA)
Standards: ISO 14443-B, NFC
Supplier Device Package: PG-USON-8-8
Description: NBT2000A8K0T4USON8XTMA5
Packaging: Tape & Reel (TR)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Type: RFID Reader
Operating Temperature: -40°C ~ 105°C (TA)
Standards: ISO 14443-B, NFC
Supplier Device Package: PG-USON-8-8
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В кошику
од. на суму грн.
| NBT2000A8K0T4USON8XTMA5 |
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Виробник: Infineon Technologies
Description: NBT2000A8K0T4USON8XTMA5
Packaging: Cut Tape (CT)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Type: RFID Reader
Operating Temperature: -40°C ~ 105°C (TA)
Standards: ISO 14443-B, NFC
Supplier Device Package: PG-USON-8-8
Description: NBT2000A8K0T4USON8XTMA5
Packaging: Cut Tape (CT)
Package / Case: 8-UDFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 13.56MHz
Type: RFID Reader
Operating Temperature: -40°C ~ 105°C (TA)
Standards: ISO 14443-B, NFC
Supplier Device Package: PG-USON-8-8
на замовлення 247 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 92.90 грн |
| 10+ | 76.56 грн |
| 25+ | 72.20 грн |
| 100+ | 62.16 грн |
| CY6264-70SNC |
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Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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| CY6264-70SNXC |
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Виробник: Infineon Technologies
Description: IC SRAM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 64KBIT PARALLEL 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 70ns
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 8K x 8
DigiKey Programmable: Not Verified
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| IRF540ZLPBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 36A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Description: MOSFET N-CH 100V 36A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 26.5mOhm @ 22A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
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| IRS2453DSPBF | ![]() |
![]() |
Виробник: Infineon Technologies
Description: IC GATE DRVR FULL-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.7V, 9.3V
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR FULL-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.7V, 9.3V
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
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| IRF7311TR |
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Виробник: Infineon Technologies
Description: MOSFET 2N-CH 20V 6.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET 2N-CH 20V 6.6A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.6A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 15V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
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| CY8C4147AZQT415XQSA1 |
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Виробник: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 53
Description: HMI-GROWTH PSOC4
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, POR, PWM, WDT
Supplier Device Package: 64-TQFP (10x10)
Number of I/O: 53
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| PSC3M5EDLHQ1XQLA1 |
Виробник: Infineon Technologies
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-VQFN (8x8)
Number of I/O: 39
Description: INDUSTRIAL-PSOC C3
Packaging: Tray
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 199MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M33F
Data Converters: A/D 18x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 3.6V
Connectivity: CANbus, I2C, IrDA, LINbus, SPI, Smart Card, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 64-VQFN (8x8)
Number of I/O: 39
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| FS1150R08A8P3CHPSA1 |
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Виробник: Infineon Technologies
Description: FS1150R08A8P3CHPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-HDG2XT-7611
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1 kW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
Description: FS1150R08A8P3CHPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-HDG2XT-7611
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 1 kW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
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| 841000037001 |
Виробник: Infineon Technologies
Description: IC MCU 32BIT 100LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 100LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
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| CY8C20424-12LQXIT |
![]() |
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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| GS61008TMRXUSA1 |
![]() |
Виробник: Infineon Technologies
Description: GS61008T-MR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Description: GS61008T-MR
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 250+ | 303.26 грн |
| 500+ | 285.35 грн |
| GS61008TMRXUSA1 |
![]() |
Виробник: Infineon Technologies
Description: GS61008T-MR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
Description: GS61008T-MR
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 27A, 6V
Vgs(th) (Max) @ Id: 1.3V @ 7mA
Drive Voltage (Max Rds On, Min Rds On): 6V
Vgs (Max): +7V, -10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 6 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 50 V
на замовлення 1217 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 656.91 грн |
| 10+ | 434.02 грн |
| 100+ | 349.27 грн |
| IMZA65R015M2HXKSA1 |
![]() |
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
Description: SILICON CARBIDE MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Rds On (Max) @ Id, Vgs: 13.2mOhm @ 64.2A, 20V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2792 pF @ 400 V
на замовлення 134 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1165.01 грн |
| 30+ | 695.50 грн |
| 120+ | 693.26 грн |
| IMZA65R060M2HXKSA1 |
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Виробник: Infineon Technologies
Description: IMZA65R060M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.8A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
Description: IMZA65R060M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.8A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
на замовлення 119 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 527.83 грн |
| 30+ | 322.62 грн |
| IMZA65R033M2HXKSA1 |
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Виробник: Infineon Technologies
Description: IMZA65R033M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
Description: IMZA65R033M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27.9A, 20V
Power Dissipation (Max): 194W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.7mA
Supplier Device Package: PG-TO247-4-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 400 V
на замовлення 110 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 750.64 грн |
| 30+ | 430.96 грн |
| IGC025S08S1XTMA1 |
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Виробник: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 10mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 40 V
Description: MV GAN DISCRETES
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 10mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 40 V
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| IGC025S08S1XTMA1 |
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Виробник: Infineon Technologies
Description: MV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 10mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 40 V
Description: MV GAN DISCRETES
Packaging: Cut Tape (CT)
Package / Case: 6-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 86A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 25A, 5V
Power Dissipation (Max): 3.3W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 10mA
Supplier Device Package: PG-TSON-6-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±6.5V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 40 V
на замовлення 4349 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 300.91 грн |
| 10+ | 191.20 грн |
| 100+ | 134.96 грн |
| 500+ | 115.74 грн |
| CY2309ZXI-1HT |
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Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC FANOUT BUFFER 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.33MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:9
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 2149 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1178.16 грн |
| 10+ | 900.18 грн |
| 25+ | 841.66 грн |
| 100+ | 729.55 грн |
| 250+ | 700.80 грн |
| 500+ | 683.47 грн |
| AUIRLZ24NSTRL |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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| AUIRLZ24NS |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 18A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 11A, 10V
Power Dissipation (Max): 3.8W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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| TLE9189QUWXUMA1 |
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Виробник: Infineon Technologies
Description: TLE9189QUWXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: SPI
Operating Temperature: -40°C ~ 175°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.2V ~ 36V
Technology: NMOS
Voltage - Load: 40V
Supplier Device Package: PG-TQFP-48-10
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
Description: TLE9189QUWXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: SPI
Operating Temperature: -40°C ~ 175°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.2V ~ 36V
Technology: NMOS
Voltage - Load: 40V
Supplier Device Package: PG-TQFP-48-10
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 186.02 грн |
| TLE9189QUWXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: TLE9189QUWXUMA1
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: SPI
Operating Temperature: -40°C ~ 175°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.2V ~ 36V
Technology: NMOS
Voltage - Load: 40V
Supplier Device Package: PG-TQFP-48-10
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
Description: TLE9189QUWXUMA1
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: SPI
Operating Temperature: -40°C ~ 175°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.2V ~ 36V
Technology: NMOS
Voltage - Load: 40V
Supplier Device Package: PG-TQFP-48-10
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 336.27 грн |
| 10+ | 246.46 грн |
| 25+ | 227.06 грн |
| 100+ | 193.10 грн |
| 250+ | 183.57 грн |
| 500+ | 177.83 грн |
| 1000+ | 170.26 грн |
| TLE9009DQUXUMA1 |
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Виробник: Infineon Technologies
Description: TLE9009DQUXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Number of Cells: 9
Mounting Type: Surface Mount
Function: Multi-Function Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Battery Chemistry: Lithium Ion
Supplier Device Package: PG-TQFP-48-9
Fault Protection: Over Current
Grade: Automotive
Qualification: AEC-Q100
Description: TLE9009DQUXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Number of Cells: 9
Mounting Type: Surface Mount
Function: Multi-Function Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Battery Chemistry: Lithium Ion
Supplier Device Package: PG-TQFP-48-9
Fault Protection: Over Current
Grade: Automotive
Qualification: AEC-Q100
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| TLE9009DQUXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: TLE9009DQUXUMA1
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Number of Cells: 9
Mounting Type: Surface Mount
Function: Multi-Function Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Battery Chemistry: Lithium Ion
Supplier Device Package: PG-TQFP-48-9
Fault Protection: Over Current
Grade: Automotive
Qualification: AEC-Q100
Description: TLE9009DQUXUMA1
Packaging: Cut Tape (CT)
Package / Case: 48-TQFP Exposed Pad
Number of Cells: 9
Mounting Type: Surface Mount
Function: Multi-Function Controller
Operating Temperature: -40°C ~ 150°C (TJ)
Battery Chemistry: Lithium Ion
Supplier Device Package: PG-TQFP-48-9
Fault Protection: Over Current
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2350 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 479.32 грн |
| 10+ | 355.24 грн |
| 25+ | 328.75 грн |
| 100+ | 281.18 грн |
| 250+ | 268.14 грн |
| 500+ | 260.29 грн |
| 1000+ | 249.66 грн |
| TLE9189QUWSXUMA1 |
Виробник: Infineon Technologies
Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.2V ~ 36V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.2V ~ 36V
Supplier Device Package: PG-TQFP-48-10
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
Description: BLDC_MOTOR_CONTROL
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.2V ~ 36V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.2V ~ 36V
Supplier Device Package: PG-TQFP-48-10
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
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| SLB9672XU20FW1624XTMA1 |
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Виробник: Infineon Technologies
Description: OPTIGA TPM SLB 9672XU2.0 FW16.24
Packaging: Tape & Reel (TR)
Description: OPTIGA TPM SLB 9672XU2.0 FW16.24
Packaging: Tape & Reel (TR)
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| SLB9672XU20FW1624XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIGA TPM SLB 9672XU2.0 FW16.24
Packaging: Cut Tape (CT)
Description: OPTIGA TPM SLB 9672XU2.0 FW16.24
Packaging: Cut Tape (CT)
на замовлення 2836 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 306.67 грн |
| 10+ | 223.82 грн |
| 25+ | 206.04 грн |
| 100+ | 174.92 грн |
| 250+ | 166.15 грн |
| 500+ | 160.85 грн |
| 1000+ | 153.93 грн |
| 2500+ | 149.41 грн |
| SLB9672XU20FW1524XTMA1 |
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Виробник: Infineon Technologies
Description: OPTIGA TPM SLB 9672XU2.0 FW15.24
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
Description: OPTIGA TPM SLB 9672XU2.0 FW15.24
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
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| SLB9672XU20FW1524XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIGA TPM SLB 9672XU2.0 FW15.24
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
Description: OPTIGA TPM SLB 9672XU2.0 FW15.24
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
на замовлення 4760 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 298.45 грн |
| 10+ | 217.80 грн |
| 25+ | 200.37 грн |
| 100+ | 170.06 грн |
| 250+ | 161.48 грн |
| 500+ | 156.31 грн |
| 1000+ | 149.57 грн |
| 2500+ | 145.15 грн |
| SLB9672AU20FW1624XTMA1 |
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Виробник: Infineon Technologies
Description: OPTIGA TPM SLB 9672AU2.0 FW16.24
Packaging: Tape & Reel (TR)
Description: OPTIGA TPM SLB 9672AU2.0 FW16.24
Packaging: Tape & Reel (TR)
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| SLB9672AU20FW1624XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: OPTIGA TPM SLB 9672AU2.0 FW16.24
Packaging: Cut Tape (CT)
Description: OPTIGA TPM SLB 9672AU2.0 FW16.24
Packaging: Cut Tape (CT)
на замовлення 4166 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 367.51 грн |
| 10+ | 270.05 грн |
| 25+ | 249.04 грн |
| 100+ | 212.10 грн |
| 250+ | 201.79 грн |
| 500+ | 195.57 грн |
| 1000+ | 187.33 грн |
| 2500+ | 182.02 грн |
| IRG8P25N120KDPBF |
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Виробник: Infineon Technologies
Description: IGBT 1200V 40A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
Description: IGBT 1200V 40A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
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