Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119463) > Сторінка 780 з 1992

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IQEH46NE2LM7UCGSCATMA1 IQEH46NE2LM7UCGSCATMA1 Infineon Technologies infineon-iqeh46ne2lm7ucgsc-datasheet-en.pdf Description: IQEH46NE2LM7UCGSCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.46mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
товару немає в наявності
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IQEH46NE2LM7UCGSCATMA1 IQEH46NE2LM7UCGSCATMA1 Infineon Technologies infineon-iqeh46ne2lm7ucgsc-datasheet-en.pdf Description: IQEH46NE2LM7UCGSCATMA1
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.46mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
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S25FL256SAGBHIA10 S25FL256SAGBHIA10 Infineon Technologies infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 1690 шт:
термін постачання 21-31 дні (днів)
1+345.01 грн
10+309.86 грн
25+300.65 грн
50+275.59 грн
100+269.03 грн
338+257.62 грн
676+247.09 грн
1014+243.44 грн
В кошику  од. на суму  грн.
BGSX24MU16E6327XTSA1 BGSX24MU16E6327XTSA1 Infineon Technologies Infineon-BGSX24MU16-DataSheet-v02_02-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214 Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Features: DC Blocked
Packaging: Cut Tape (CT)
Package / Case: 16-UFLGA Exposed Pad
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, WCDMA
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Topology: Reflective
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
на замовлення 4394 шт:
термін постачання 21-31 дні (днів)
4+79.80 грн
10+65.99 грн
25+62.23 грн
100+53.55 грн
250+50.64 грн
500+48.58 грн
1000+45.87 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CYW20719B2KWB9GT CYW20719B2KWB9GT Infineon Technologies infineon-cyw20719-airoc-bluetooth-bluetooth-le-system-on-chip-enhanced-low-power-datasheet-en.pdf?fileId=8ac78c8c85ecb3470185f3d08c7a10d3 Description: IC RF TXRX+MCU BLE 134WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 134-BGA, WLCSP
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 2MB ROM, 512kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 134-WLCSP (3.31x3.22)
GPIO: 40
Modulation: 8-DPSK, 4-DQPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART
DigiKey Programmable: Not Verified
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IGLR70R270D2SXUMA1 IGLR70R270D2SXUMA1 Infineon Technologies infineon-iglr70r270d2s-datasheet-en.pdf Description: GANFET N-CH 700V 7.3A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 560µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V
товару немає в наявності
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IGLR70R270D2SXUMA1 IGLR70R270D2SXUMA1 Infineon Technologies infineon-iglr70r270d2s-datasheet-en.pdf Description: GANFET N-CH 700V 7.3A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 560µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V
на замовлення 4045 шт:
термін постачання 21-31 дні (днів)
3+151.77 грн
10+93.27 грн
100+63.24 грн
500+47.27 грн
1000+43.38 грн
2000+42.11 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IRF1407PBF IRF1407PBF Infineon Technologies infineon-irf1407-datasheet-en.pdf description Description: MOSFET N-CH 75V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
на замовлення 6618 шт:
термін постачання 21-31 дні (днів)
2+205.75 грн
50+98.01 грн
100+88.32 грн
500+66.93 грн
1000+61.80 грн
2000+57.49 грн
5000+51.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C20646AS-24LQXI CY8C20646AS-24LQXI Infineon Technologies CY8C20336H%2C446H.pdf Description: IC PSOC 16KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
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CY8C20646A-24LQXIT CY8C20646A-24LQXIT Infineon Technologies Infineon-CY8C20XX6A_S_1.8_V_Programmable_CapSense_Controller_with_SmartSense_Auto-tuning_1-33_Buttons_0-6_Sliders-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc6dc04671&utm_source=cypress&utm_medium=referral&utm_camp Description: IC CAPSENSE 1.8V 36 I/O 48-QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
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IR2103PBF IR2103PBF Infineon Technologies ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
2+168.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISA150233C03LMDSXTMA1 ISA150233C03LMDSXTMA1 Infineon Technologies Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5 Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
на замовлення 3975 шт:
термін постачання 21-31 дні (днів)
8+39.90 грн
12+27.20 грн
25+24.32 грн
100+19.91 грн
250+18.51 грн
500+17.67 грн
1000+16.70 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TLE9262BQXXUMA2 TLE9262BQXXUMA2 Infineon Technologies Infineon-TLE9262BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016073c1ac4d5d68 Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
на замовлення 2440 шт:
термін постачання 21-31 дні (днів)
2+245.65 грн
10+178.40 грн
25+163.72 грн
100+138.58 грн
250+131.39 грн
500+130.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE9261BQXV33XUMA2 TLE9261BQXV33XUMA2 Infineon Technologies Infineon-TLE9261BQX%20V33-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609757fc5a3927 Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
на замовлення 2187 шт:
термін постачання 21-31 дні (днів)
2+233.92 грн
10+169.66 грн
25+155.67 грн
100+131.64 грн
250+124.75 грн
500+123.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE92613BQXV33XUMA2 TLE92613BQXV33XUMA2 Infineon Technologies Infineon-TLE9261-3BQX%20V33-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609757f18f3924 Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
на замовлення 1558 шт:
термін постачання 21-31 дні (днів)
2+253.48 грн
10+184.12 грн
25+169.11 грн
100+143.19 грн
250+135.80 грн
500+134.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XMC1302Q024X0064ABXTMA1 XMC1302Q024X0064ABXTMA1 Infineon Technologies Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-24-19
Number of I/O: 22
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+85.67 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
XMC1302Q024X0064ABXTMA1 XMC1302Q024X0064ABXTMA1 Infineon Technologies Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: XMC1000
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-24-19
Number of I/O: 22
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
2+168.98 грн
10+120.84 грн
25+110.41 грн
100+92.86 грн
250+87.74 грн
500+84.65 грн
1000+80.76 грн
2500+78.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRF3205 AUIRF3205 Infineon Technologies auirf3205.pdf?fileId=5546d462533600a4015355ac6c3e139f Description: AUIRF3205 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
на замовлення 22940 шт:
термін постачання 21-31 дні (днів)
133+149.60 грн
Мінімальне замовлення: 133
В кошику  од. на суму  грн.
IPP038N15NM6AKSA1 IPP038N15NM6AKSA1 Infineon Technologies DS_IPP038N15NM6_en.pdf Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 76A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 179µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
на замовлення 178 шт:
термін постачання 21-31 дні (днів)
1+410.72 грн
50+207.28 грн
100+189.12 грн
В кошику  од. на суму  грн.
IQDH45N04LM6SCATMA1 IQDH45N04LM6SCATMA1 Infineon Technologies Infineon-IQDH45N04LM6SC-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c919c9f9d0191b2ac53fa0acc Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 611A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
товару немає в наявності
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IQDH45N04LM6SCATMA1 IQDH45N04LM6SCATMA1 Infineon Technologies Infineon-IQDH45N04LM6SC-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c919c9f9d0191b2ac53fa0acc Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 611A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
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AIMDQ75R007M2HXTMA1 AIMDQ75R007M2HXTMA1 Infineon Technologies infineon-aimdq75r007m2h-datasheet-en.pdf Description: AIMDQ75R007M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 126A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 27.7mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5687 pF @ 500 V
Qualification: AEC-Q101
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AIMDQ75R007M2HXTMA1 AIMDQ75R007M2HXTMA1 Infineon Technologies infineon-aimdq75r007m2h-datasheet-en.pdf Description: AIMDQ75R007M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 126A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 27.7mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5687 pF @ 500 V
Qualification: AEC-Q101
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
1+2346.22 грн
10+1662.81 грн
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IR2101PBF IR2101PBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 3456 шт:
термін постачання 21-31 дні (днів)
2+227.66 грн
10+164.61 грн
50+142.78 грн
100+127.63 грн
250+120.92 грн
500+116.87 грн
1000+111.68 грн
2500+108.22 грн
Мінімальне замовлення: 2
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IMT65R060M2HXUMA1 IMT65R060M2HXUMA1 Infineon Technologies Infineon-IMT65R060M2H-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c92bcf0b001934e3cc8693d4b Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.4A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
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IMT65R060M2HXUMA1 IMT65R060M2HXUMA1 Infineon Technologies Infineon-IMT65R060M2H-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c92bcf0b001934e3cc8693d4b Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.4A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
1+441.24 грн
В кошику  од. на суму  грн.
IPT65R018CM8XTMA1 IPT65R018CM8XTMA1 Infineon Technologies Infineon-IPT65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e7adc80aaf Description: IPT65R018CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 134A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
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IPT65R018CM8XTMA1 IPT65R018CM8XTMA1 Infineon Technologies Infineon-IPT65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e7adc80aaf Description: IPT65R018CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 134A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
на замовлення 1473 шт:
термін постачання 21-31 дні (днів)
1+884.04 грн
10+592.89 грн
100+478.92 грн
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CY8C6116BZI-F54T Infineon Technologies Description: IC MCU 32BIT 512KB FLSH 124FBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, Crypto - AES, DMA, I2S, POR, PWM, RSA, SHA, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
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SPI11N60C3XKSA1 SPI11N60C3XKSA1 Infineon Technologies SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3 Description: MOSFET N-CH 650V 11A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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AMF12S62LB2ZXKMA1 Infineon Technologies AMF12S62LB2ZXKMA1.pdf Description: AMF12S62LB2ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 125W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 800V
Rds On (Max) @ Id, Vgs: 88.3mOhm @ 11.3A, 18V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 3.6mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
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AMM12S62LB1ZXKMA1 Infineon Technologies AMM12S62LB1ZXKMA1.pdf Description: AMM12S62LB1ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (Three Phase Inverter)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 128W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 800V
Rds On (Max) @ Id, Vgs: 88.3mOhm @ 11.3A, 18V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 3.6mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
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AMF12S18LB2ZXKMA1 Infineon Technologies AMF12S18LB2ZXKMA1.pdf Description: AMF12S18LB2ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 300W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2704pF @ 800V
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 37.4A, 18V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 11.8mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
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AMM12S18LB1ZXKMA1 Infineon Technologies AMM12S18LB1ZXKMA1.pdf Description: AMM12S18LB1ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (Three Phase Inverter)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 312W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2704pF @ 800V
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 37.4A, 18V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 11.8mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
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BGS13SN8E6327XTSA1 BGS13SN8E6327XTSA1 Infineon Technologies Infineon-BGS13SN8-DS-v02_02-EN.pdf?fileId=5546d462584d1d4a0158cf52e3ae03a7 Description: IC RF SWITCH SP3T 6GHZ TSNP8-1
Packaging: Bulk
Package / Case: 8-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP3T
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.4V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 5.725GHz
Isolation: 15dB
Supplier Device Package: PG-TSNP-8-1
на замовлення 18068 шт:
термін постачання 21-31 дні (днів)
1235+15.96 грн
Мінімальне замовлення: 1235
В кошику  од. на суму  грн.
IAUCN08S7N024TATMA1 IAUCN08S7N024TATMA1 Infineon Technologies Infineon-IAUCN08S7N024T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d73f4822d38 Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tj)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 83A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 74.7µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4849 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+75.95 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUCN08S7N024TATMA1 IAUCN08S7N024TATMA1 Infineon Technologies Infineon-IAUCN08S7N024T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d73f4822d38 Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tj)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 83A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 74.7µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4849 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4964 шт:
термін постачання 21-31 дні (днів)
2+235.48 грн
10+147.96 грн
100+103.16 грн
500+84.02 грн
Мінімальне замовлення: 2
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BTS70402EPADAUGHBRDTOBO1 BTS70402EPADAUGHBRDTOBO1 Infineon Technologies Infineon-BTS7040-2EPA-DataSheet-v01_10-EN.pdf?fileId=5546d4625e763904015e9412cf6e2dbb Description: BTS7040-2EPA DAUGH BRD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7040-2EPA
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+3619.85 грн
В кошику  од. на суму  грн.
TLE92102QVWXUMA1 TLE92102QVWXUMA1 Infineon Technologies infineon-tle92102qvw-datasheet-en.pdf Description: TLE92102QVWXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 35V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 35V
Supplier Device Package: PG-VQFN-32-21
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
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TLE92102QVWXUMA1 TLE92102QVWXUMA1 Infineon Technologies infineon-tle92102qvw-datasheet-en.pdf Description: TLE92102QVWXUMA1
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 35V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 35V
Supplier Device Package: PG-VQFN-32-21
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 797 шт:
термін постачання 21-31 дні (днів)
2+171.33 грн
10+122.95 грн
25+112.37 грн
100+94.54 грн
250+89.33 грн
500+86.19 грн
Мінімальне замовлення: 2
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TLE9186QVWXUMA1 TLE9186QVWXUMA1 Infineon Technologies infineon-tle9186qvw-datasheet-en.pdf Description: TLE9186QVWXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.5V ~ 35V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 35V
Supplier Device Package: PG-VQFN-32-22
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
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TLE9186QVWXUMA1 TLE9186QVWXUMA1 Infineon Technologies infineon-tle9186qvw-datasheet-en.pdf Description: TLE9186QVWXUMA1
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.5V ~ 35V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 35V
Supplier Device Package: PG-VQFN-32-22
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 993 шт:
термін постачання 21-31 дні (днів)
2+196.37 грн
10+141.63 грн
25+129.70 грн
100+109.39 грн
250+103.50 грн
500+99.96 грн
Мінімальне замовлення: 2
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CY25100SXC-062 CY25100SXC-062 Infineon Technologies Infineon-CY25100_Field_and_Factory_Programmable_Spread_Spectrum_Clock_Generator_for_EMI_Reduction-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4fa073a62 Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
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CY22391LTXC-06 CY22391LTXC-06 Infineon Technologies CY22389_89_91_4-13-20.pdf Description: IC CLOCK GENERATOR
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
DigiKey Programmable: Not Verified
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AUIRF1324STRL AUIRF1324STRL Infineon Technologies auirf1324s.pdf?fileId=5546d462533600a4015355a8b241136c Description: MOSFET N-CH 24V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
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IRSM001-100LHTR Infineon Technologies i.MX%206%20Ultra%20Light.pdf Description: IRSM001 - MULTICHIP MODULE
Packaging: Bulk
на замовлення 68000 шт:
термін постачання 21-31 дні (днів)
151+132.32 грн
Мінімальне замовлення: 151
В кошику  од. на суму  грн.
CY23EP05SXI-1 CY23EP05SXI-1 Infineon Technologies download Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133MHz, 167MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY23EP05SXC-1 CY23EP05SXC-1 Infineon Technologies download Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133MHz, 167MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
1+992.78 грн
В кошику  од. на суму  грн.
IRMCF312TR IRMCF312TR Infineon Technologies IRMCF312.pdf Description: IC MOTOR DRIVER 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (6)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: Power MOSFET, IGBT
Supplier Device Package: 100-QFP (14x14)
Motor Type - AC, DC: AC, Synchronous
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IRMCF312TR IRMCF312TR Infineon Technologies IRMCF312.pdf Description: IC MOTOR DRIVER 100QFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (6)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: Power MOSFET, IGBT
Supplier Device Package: 100-QFP (14x14)
Motor Type - AC, DC: AC, Synchronous
на замовлення 722 шт:
термін постачання 21-31 дні (днів)
1+573.45 грн
10+428.59 грн
25+397.62 грн
100+341.25 грн
250+326.04 грн
500+316.87 грн
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IAUZN04S7N049ATMA1 IAUZN04S7N049ATMA1 Infineon Technologies Infineon-IAUZN04S7N049-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ef1ec6adc Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tj)
Rds On (Max) @ Id, Vgs: 4.93mOhm @ 30A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 922 pF @ 20 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+19.65 грн
10000+17.60 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IAUZN04S7N049ATMA1 IAUZN04S7N049ATMA1 Infineon Technologies Infineon-IAUZN04S7N049-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ef1ec6adc Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tj)
Rds On (Max) @ Id, Vgs: 4.93mOhm @ 30A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 922 pF @ 20 V
Qualification: AEC-Q101
на замовлення 10251 шт:
термін постачання 21-31 дні (днів)
4+82.14 грн
10+49.57 грн
100+32.64 грн
500+23.81 грн
1000+21.61 грн
2000+19.76 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CY7C63913-PXC CY7C63913-PXC Infineon Technologies CY7C63310%2C%20638xx%2C%20639xx.pdf Description: IC USB PERIPHERAL CTRLR 40-DIP
Package / Case: 40-DIP (0.600", 15.24mm)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 40-PDIP
DigiKey Programmable: Not Verified
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KP497XTMA1 KP497XTMA1 Infineon Technologies infineon-kp497-datasheet-en.pdf Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 16 b
Operating Pressure: 2.9PSI ~ 36.26PSI (20kPa ~ 250kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.5V ~ 3.6V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DSOSP-14-84
Port Style: No Port
Maximum Pressure: 362.59PSI (2500kPa)
Grade: Automotive
Qualification: AEC-Q100
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KP497XTMA1 KP497XTMA1 Infineon Technologies infineon-kp497-datasheet-en.pdf Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 16 b
Operating Pressure: 2.9PSI ~ 36.26PSI (20kPa ~ 250kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.5V ~ 3.6V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DSOSP-14-84
Port Style: No Port
Maximum Pressure: 362.59PSI (2500kPa)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1165 шт:
термін постачання 21-31 дні (днів)
1+337.97 грн
5+291.85 грн
10+279.50 грн
25+248.41 грн
50+238.91 грн
100+230.20 грн
500+209.18 грн
В кошику  од. на суму  грн.
SP49T0512XTMA1 SP49T0512XTMA1 Infineon Technologies Infineon-SP49T-05-12-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c901008d10190124b254d035f Description: TPMS
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: I2C
Mounting Type: Surface Mount
Output: 32 b
Operating Pressure: 14.5PSI ~ 232.06PSI (100kPa ~ 1600kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Industrial Automation
Supplier Device Package: PG-DSOSP-14-84
Port Style: No Port
Maximum Pressure: 362.59PSI (2500kPa)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1+635.25 грн
10+476.05 грн
25+442.25 грн
100+380.14 грн
250+363.50 грн
500+353.47 грн
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S26KL256SDABHV020 S26KL256SDABHV020 Infineon Technologies infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+847.27 грн
В кошику  од. на суму  грн.
S25FS064SAGBHV020 S25FS064SAGBHV020 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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S25FS064SDSBHV020 S25FS064SDSBHV020 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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S25FL128LDPBHV020 S25FL128LDPBHV020 Infineon Technologies INFN-S-A0017271261-1.pdf Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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IQEH46NE2LM7UCGSCATMA1 infineon-iqeh46ne2lm7ucgsc-datasheet-en.pdf
IQEH46NE2LM7UCGSCATMA1
Виробник: Infineon Technologies
Description: IQEH46NE2LM7UCGSCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.46mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
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IQEH46NE2LM7UCGSCATMA1 infineon-iqeh46ne2lm7ucgsc-datasheet-en.pdf
IQEH46NE2LM7UCGSCATMA1
Виробник: Infineon Technologies
Description: IQEH46NE2LM7UCGSCATMA1
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 440A (Tc)
Rds On (Max) @ Id, Vgs: 0.46mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 2V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
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S25FL256SAGBHIA10 infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SAGBHIA10
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 1690 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+345.01 грн
10+309.86 грн
25+300.65 грн
50+275.59 грн
100+269.03 грн
338+257.62 грн
676+247.09 грн
1014+243.44 грн
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BGSX24MU16E6327XTSA1 Infineon-BGSX24MU16-DataSheet-v02_02-EN.pdf?fileId=5546d4627448fb2b017468b01dad7214
BGSX24MU16E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH DP4T 5GHZ ULGA16-1
Features: DC Blocked
Packaging: Cut Tape (CT)
Package / Case: 16-UFLGA Exposed Pad
Mounting Type: Surface Mount
Circuit: DP4T
RF Type: GSM, LTE, WCDMA
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.4V
Insertion Loss: 1dB
Frequency Range: 100MHz ~ 5GHz
Topology: Reflective
Test Frequency: 5GHz
Isolation: 34dB
Supplier Device Package: PG-ULGA-16-1
IIP3: 77dBm
на замовлення 4394 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+79.80 грн
10+65.99 грн
25+62.23 грн
100+53.55 грн
250+50.64 грн
500+48.58 грн
1000+45.87 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CYW20719B2KWB9GT infineon-cyw20719-airoc-bluetooth-bluetooth-le-system-on-chip-enhanced-low-power-datasheet-en.pdf?fileId=8ac78c8c85ecb3470185f3d08c7a10d3
CYW20719B2KWB9GT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 134WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 134-BGA, WLCSP
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 2MB ROM, 512kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 134-WLCSP (3.31x3.22)
GPIO: 40
Modulation: 8-DPSK, 4-DQPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PCM, PWM, SPI, UART
DigiKey Programmable: Not Verified
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IGLR70R270D2SXUMA1 infineon-iglr70r270d2s-datasheet-en.pdf
IGLR70R270D2SXUMA1
Виробник: Infineon Technologies
Description: GANFET N-CH 700V 7.3A 8TDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 560µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V
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IGLR70R270D2SXUMA1 infineon-iglr70r270d2s-datasheet-en.pdf
IGLR70R270D2SXUMA1
Виробник: Infineon Technologies
Description: GANFET N-CH 700V 7.3A 8TDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 1.7A
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 560µA
Supplier Device Package: PG-TSON-8-8
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 74 pF @ 400 V
на замовлення 4045 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+151.77 грн
10+93.27 грн
100+63.24 грн
500+47.27 грн
1000+43.38 грн
2000+42.11 грн
Мінімальне замовлення: 3
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IRF1407PBF description infineon-irf1407-datasheet-en.pdf
IRF1407PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 130A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 78A, 10V
Power Dissipation (Max): 330W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
на замовлення 6618 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+205.75 грн
50+98.01 грн
100+88.32 грн
500+66.93 грн
1000+61.80 грн
2000+57.49 грн
5000+51.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C20646AS-24LQXI CY8C20336H%2C446H.pdf
CY8C20646AS-24LQXI
Виробник: Infineon Technologies
Description: IC PSOC 16KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY8C20646A-24LQXIT Infineon-CY8C20XX6A_S_1.8_V_Programmable_CapSense_Controller_with_SmartSense_Auto-tuning_1-33_Buttons_0-6_Sliders-DataSheet-v26_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecc6dc04671&utm_source=cypress&utm_medium=referral&utm_camp
CY8C20646A-24LQXIT
Виробник: Infineon Technologies
Description: IC CAPSENSE 1.8V 36 I/O 48-QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: CY8C20xx6A
Program Memory Type: FLASH (16kB)
Applications: Capacitive Sensing
Core Processor: M8C
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IR2103PBF ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f
IR2103PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+168.20 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISA150233C03LMDSXTMA1 Infineon-ISA150233C03LMDS-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92bcf0b00192d2ed4aca62c5
ISA150233C03LMDSXTMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 10.2A (Tc), 6.6A (Ta), 8.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 2300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10.2A, 10V, 23.3mOhm @ 8.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V, 32nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
на замовлення 3975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+39.90 грн
12+27.20 грн
25+24.32 грн
100+19.91 грн
250+18.51 грн
500+17.67 грн
1000+16.70 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
TLE9262BQXXUMA2 Infineon-TLE9262BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc8016073c1ac4d5d68
TLE9262BQXXUMA2
Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
на замовлення 2440 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+245.65 грн
10+178.40 грн
25+163.72 грн
100+138.58 грн
250+131.39 грн
500+130.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE9261BQXV33XUMA2 Infineon-TLE9261BQX%20V33-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609757fc5a3927
TLE9261BQXV33XUMA2
Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
на замовлення 2187 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+233.92 грн
10+169.66 грн
25+155.67 грн
100+131.64 грн
250+124.75 грн
500+123.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE92613BQXV33XUMA2 Infineon-TLE9261-3BQX%20V33-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609757f18f3924
TLE92613BQXV33XUMA2
Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
на замовлення 1558 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+253.48 грн
10+184.12 грн
25+169.11 грн
100+143.19 грн
250+135.80 грн
500+134.70 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
XMC1302Q024X0064ABXTMA1 Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302Q024X0064ABXTMA1
Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-24-19
Number of I/O: 22
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+85.67 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
XMC1302Q024X0064ABXTMA1 Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302Q024X0064ABXTMA1
Виробник: Infineon Technologies
Description: XMC1000
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 13x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-24-19
Number of I/O: 22
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+168.98 грн
10+120.84 грн
25+110.41 грн
100+92.86 грн
250+87.74 грн
500+84.65 грн
1000+80.76 грн
2500+78.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRF3205 auirf3205.pdf?fileId=5546d462533600a4015355ac6c3e139f
AUIRF3205
Виробник: Infineon Technologies
Description: AUIRF3205 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
на замовлення 22940 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
133+149.60 грн
Мінімальне замовлення: 133
В кошику  од. на суму  грн.
IPP038N15NM6AKSA1 DS_IPP038N15NM6_en.pdf
IPP038N15NM6AKSA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 76A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 179µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
на замовлення 178 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+410.72 грн
50+207.28 грн
100+189.12 грн
В кошику  од. на суму  грн.
IQDH45N04LM6SCATMA1 Infineon-IQDH45N04LM6SC-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c919c9f9d0191b2ac53fa0acc
IQDH45N04LM6SCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 611A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
товару немає в наявності
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IQDH45N04LM6SCATMA1 Infineon-IQDH45N04LM6SC-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c919c9f9d0191b2ac53fa0acc
IQDH45N04LM6SCATMA1
Виробник: Infineon Technologies
Description: OPTIMOS POWER MOSFETS 25 V - 150
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 611A (Tc)
Rds On (Max) @ Id, Vgs: 0.49mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Supplier Device Package: PG-WHSON-8-U02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
товару немає в наявності
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AIMDQ75R007M2HXTMA1 infineon-aimdq75r007m2h-datasheet-en.pdf
AIMDQ75R007M2HXTMA1
Виробник: Infineon Technologies
Description: AIMDQ75R007M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 126A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 27.7mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5687 pF @ 500 V
Qualification: AEC-Q101
товару немає в наявності
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AIMDQ75R007M2HXTMA1 infineon-aimdq75r007m2h-datasheet-en.pdf
AIMDQ75R007M2HXTMA1
Виробник: Infineon Technologies
Description: AIMDQ75R007M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 126A, 20V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 27.7mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 840 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 5687 pF @ 500 V
Qualification: AEC-Q101
на замовлення 24 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2346.22 грн
10+1662.81 грн
В кошику  од. на суму  грн.
IR2101PBF description IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2101PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 3456 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+227.66 грн
10+164.61 грн
50+142.78 грн
100+127.63 грн
250+120.92 грн
500+116.87 грн
1000+111.68 грн
2500+108.22 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IMT65R060M2HXUMA1 Infineon-IMT65R060M2H-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c92bcf0b001934e3cc8693d4b
IMT65R060M2HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.4A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
товару немає в наявності
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IMT65R060M2HXUMA1 Infineon-IMT65R060M2H-DataSheet-v02_02-EN.pdf?fileId=8ac78c8c92bcf0b001934e3cc8693d4b
IMT65R060M2HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41.4A (Tc)
Rds On (Max) @ Id, Vgs: 55mOhm @ 15.4A, 20V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 3.1mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 400 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+441.24 грн
В кошику  од. на суму  грн.
IPT65R018CM8XTMA1 Infineon-IPT65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e7adc80aaf
IPT65R018CM8XTMA1
Виробник: Infineon Technologies
Description: IPT65R018CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 134A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
товару немає в наявності
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IPT65R018CM8XTMA1 Infineon-IPT65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e7adc80aaf
IPT65R018CM8XTMA1
Виробник: Infineon Technologies
Description: IPT65R018CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 134A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
на замовлення 1473 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+884.04 грн
10+592.89 грн
100+478.92 грн
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CY8C6116BZI-F54T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 512KB FLSH 124FBGA
Packaging: Tape & Reel (TR)
Package / Case: 124-VFBGA
Mounting Type: Surface Mount
Speed: 50MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 32K x 8
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10/12b SAR; D/A 2x7b, 1x12b Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, PCM, PDM, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, Capsense, Crypto - AES, DMA, I2S, POR, PWM, RSA, SHA, TRNG, WDT
Supplier Device Package: 124-VFBGA (9x9)
Number of I/O: 104
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SPI11N60C3XKSA1 SPP_I_A11N60C3_E8185_Rev[1].3.1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a3043163797a6011638a2fdee01a3
SPI11N60C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO262-3
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 500µA
Supplier Device Package: PG-TO262-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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AMF12S62LB2ZXKMA1 AMF12S62LB2ZXKMA1.pdf
Виробник: Infineon Technologies
Description: AMF12S62LB2ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 125W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 800V
Rds On (Max) @ Id, Vgs: 88.3mOhm @ 11.3A, 18V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 3.6mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
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AMM12S62LB1ZXKMA1 AMM12S62LB1ZXKMA1.pdf
Виробник: Infineon Technologies
Description: AMM12S62LB1ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (Three Phase Inverter)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 128W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 804pF @ 800V
Rds On (Max) @ Id, Vgs: 88.3mOhm @ 11.3A, 18V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 3.6mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
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AMF12S18LB2ZXKMA1 AMF12S18LB2ZXKMA1.pdf
Виробник: Infineon Technologies
Description: AMF12S18LB2ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 300W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 83A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2704pF @ 800V
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 37.4A, 18V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 11.8mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
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AMM12S18LB1ZXKMA1 AMM12S18LB1ZXKMA1.pdf
Виробник: Infineon Technologies
Description: AMM12S18LB1ZXKMA1
Packaging: Tube
Package / Case: 32-PowerDIP Module (1.264", 32.10mm)
Mounting Type: Through Hole
Configuration: 6 N-Channel (Three Phase Inverter)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Power - Max: 312W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2704pF @ 800V
Rds On (Max) @ Id, Vgs: 26.4mOhm @ 37.4A, 18V
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 18V
Vgs(th) (Max) @ Id: 5.1V @ 11.8mA
Supplier Device Package: DIP 44x28DA
Grade: Automotive
Qualification: AEC-Q101
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BGS13SN8E6327XTSA1 Infineon-BGS13SN8-DS-v02_02-EN.pdf?fileId=5546d462584d1d4a0158cf52e3ae03a7
BGS13SN8E6327XTSA1
Виробник: Infineon Technologies
Description: IC RF SWITCH SP3T 6GHZ TSNP8-1
Packaging: Bulk
Package / Case: 8-XFQFN
Impedance: 50Ohm
Mounting Type: Surface Mount
Circuit: SP3T
RF Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V ~ 3.4V
Insertion Loss: 0.65dB
Frequency Range: 100MHz ~ 6GHz
Test Frequency: 5.725GHz
Isolation: 15dB
Supplier Device Package: PG-TSNP-8-1
на замовлення 18068 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1235+15.96 грн
Мінімальне замовлення: 1235
В кошику  од. на суму  грн.
IAUCN08S7N024TATMA1 Infineon-IAUCN08S7N024T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d73f4822d38
IAUCN08S7N024TATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tj)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 83A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 74.7µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4849 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+75.95 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUCN08S7N024TATMA1 Infineon-IAUCN08S7N024T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d73f4822d38
IAUCN08S7N024TATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.216", 5.48mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 165A (Tj)
Rds On (Max) @ Id, Vgs: 2.44mOhm @ 83A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 74.7µA
Supplier Device Package: PG-LHDSO-10-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4849 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4964 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+235.48 грн
10+147.96 грн
100+103.16 грн
500+84.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
BTS70402EPADAUGHBRDTOBO1 Infineon-BTS7040-2EPA-DataSheet-v01_10-EN.pdf?fileId=5546d4625e763904015e9412cf6e2dbb
BTS70402EPADAUGHBRDTOBO1
Виробник: Infineon Technologies
Description: BTS7040-2EPA DAUGH BRD
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7040-2EPA
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3619.85 грн
В кошику  од. на суму  грн.
TLE92102QVWXUMA1 infineon-tle92102qvw-datasheet-en.pdf
TLE92102QVWXUMA1
Виробник: Infineon Technologies
Description: TLE92102QVWXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 35V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 35V
Supplier Device Package: PG-VQFN-32-21
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
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TLE92102QVWXUMA1 infineon-tle92102qvw-datasheet-en.pdf
TLE92102QVWXUMA1
Виробник: Infineon Technologies
Description: TLE92102QVWXUMA1
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 35V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 35V
Supplier Device Package: PG-VQFN-32-21
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 797 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+171.33 грн
10+122.95 грн
25+112.37 грн
100+94.54 грн
250+89.33 грн
500+86.19 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
TLE9186QVWXUMA1 infineon-tle9186qvw-datasheet-en.pdf
TLE9186QVWXUMA1
Виробник: Infineon Technologies
Description: TLE9186QVWXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.5V ~ 35V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 35V
Supplier Device Package: PG-VQFN-32-22
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
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TLE9186QVWXUMA1 infineon-tle9186qvw-datasheet-en.pdf
TLE9186QVWXUMA1
Виробник: Infineon Technologies
Description: TLE9186QVWXUMA1
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Controller - Current Management
Interface: PWM, SPI
Operating Temperature: -40°C ~ 175°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 4.5V ~ 35V
Applications: General Purpose
Technology: NMOS
Voltage - Load: 4.5V ~ 35V
Supplier Device Package: PG-VQFN-32-22
Motor Type - AC, DC: Brushless DC (BLDC)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 993 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+196.37 грн
10+141.63 грн
25+129.70 грн
100+109.39 грн
250+103.50 грн
500+99.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY25100SXC-062 Infineon-CY25100_Field_and_Factory_Programmable_Spread_Spectrum_Clock_Generator_for_EMI_Reduction-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4fa073a62
CY25100SXC-062
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
DigiKey Programmable: Not Verified
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CY22391LTXC-06 CY22389_89_91_4-13-20.pdf
CY22391LTXC-06
Виробник: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Tray
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
DigiKey Programmable: Not Verified
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AUIRF1324STRL auirf1324s.pdf?fileId=5546d462533600a4015355a8b241136c
AUIRF1324STRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 24V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
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IRSM001-100LHTR i.MX%206%20Ultra%20Light.pdf
Виробник: Infineon Technologies
Description: IRSM001 - MULTICHIP MODULE
Packaging: Bulk
на замовлення 68000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
151+132.32 грн
Мінімальне замовлення: 151
В кошику  од. на суму  грн.
CY23EP05SXI-1 download
CY23EP05SXI-1
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133MHz, 167MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY23EP05SXC-1 download
CY23EP05SXC-1
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133MHz, 167MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.5V, 3.3V
Ratio - Input:Output: 1:5
Differential - Input:Output: No/No
Supplier Device Package: 8-SOIC
PLL: Yes
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
на замовлення 7 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+992.78 грн
В кошику  од. на суму  грн.
IRMCF312TR IRMCF312.pdf
IRMCF312TR
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 100QFP
Packaging: Tape & Reel (TR)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (6)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: Power MOSFET, IGBT
Supplier Device Package: 100-QFP (14x14)
Motor Type - AC, DC: AC, Synchronous
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IRMCF312TR IRMCF312.pdf
IRMCF312TR
Виробник: Infineon Technologies
Description: IC MOTOR DRIVER 100QFP
Packaging: Cut Tape (CT)
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (6)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: Power MOSFET, IGBT
Supplier Device Package: 100-QFP (14x14)
Motor Type - AC, DC: AC, Synchronous
на замовлення 722 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+573.45 грн
10+428.59 грн
25+397.62 грн
100+341.25 грн
250+326.04 грн
500+316.87 грн
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IAUZN04S7N049ATMA1 Infineon-IAUZN04S7N049-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ef1ec6adc
IAUZN04S7N049ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tj)
Rds On (Max) @ Id, Vgs: 4.93mOhm @ 30A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 922 pF @ 20 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+19.65 грн
10000+17.60 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IAUZN04S7N049ATMA1 Infineon-IAUZN04S7N049-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192a79ef1ec6adc
IAUZN04S7N049ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tj)
Rds On (Max) @ Id, Vgs: 4.93mOhm @ 30A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 922 pF @ 20 V
Qualification: AEC-Q101
на замовлення 10251 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+82.14 грн
10+49.57 грн
100+32.64 грн
500+23.81 грн
1000+21.61 грн
2000+19.76 грн
Мінімальне замовлення: 4
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CY7C63913-PXC CY7C63310%2C%20638xx%2C%20639xx.pdf
CY7C63913-PXC
Виробник: Infineon Technologies
Description: IC USB PERIPHERAL CTRLR 40-DIP
Package / Case: 40-DIP (0.600", 15.24mm)
Function: Controller
Interface: GPIO, SPI
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4V ~ 5.5V
Current - Supply: 40mA
Protocol: USB
Standards: USB 2.0
Supplier Device Package: 40-PDIP
DigiKey Programmable: Not Verified
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KP497XTMA1 infineon-kp497-datasheet-en.pdf
KP497XTMA1
Виробник: Infineon Technologies
Description: MEMS GROWTH
Packaging: Tape & Reel (TR)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 16 b
Operating Pressure: 2.9PSI ~ 36.26PSI (20kPa ~ 250kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.5V ~ 3.6V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DSOSP-14-84
Port Style: No Port
Maximum Pressure: 362.59PSI (2500kPa)
Grade: Automotive
Qualification: AEC-Q100
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KP497XTMA1 infineon-kp497-datasheet-en.pdf
KP497XTMA1
Виробник: Infineon Technologies
Description: MEMS GROWTH
Packaging: Cut Tape (CT)
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: I2C, SPI
Mounting Type: Surface Mount
Output: 16 b
Operating Pressure: 2.9PSI ~ 36.26PSI (20kPa ~ 250kPa)
Pressure Type: Absolute
Accuracy: ±0.29PSI (±2kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 2.5V ~ 3.6V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DSOSP-14-84
Port Style: No Port
Maximum Pressure: 362.59PSI (2500kPa)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1165 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+337.97 грн
5+291.85 грн
10+279.50 грн
25+248.41 грн
50+238.91 грн
100+230.20 грн
500+209.18 грн
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SP49T0512XTMA1 Infineon-SP49T-05-12-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c901008d10190124b254d035f
SP49T0512XTMA1
Виробник: Infineon Technologies
Description: TPMS
Packaging: Cut Tape (CT)
Features: Temperature Compensated
Package / Case: 14-BSSOP (0.220", 5.60mm Width)
Output Type: I2C
Mounting Type: Surface Mount
Output: 32 b
Operating Pressure: 14.5PSI ~ 232.06PSI (100kPa ~ 1600kPa)
Pressure Type: Absolute
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3.6V
Applications: Industrial Automation
Supplier Device Package: PG-DSOSP-14-84
Port Style: No Port
Maximum Pressure: 362.59PSI (2500kPa)
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+635.25 грн
10+476.05 грн
25+442.25 грн
100+380.14 грн
250+363.50 грн
500+353.47 грн
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S26KL256SDABHV020 infineon-512mb-64mb256mb-32mb128mb-16mb1-8v-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KL256SDABHV020
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+847.27 грн
В кошику  од. на суму  грн.
S25FS064SAGBHV020 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SAGBHV020
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (6x8)
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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S25FS064SDSBHV020 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SDSBHV020
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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S25FL128LDPBHV020 INFN-S-A0017271261-1.pdf
S25FL128LDPBHV020
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 24BGA
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 66 MHz
Memory Format: FLASH
Supplier Device Package: 24-BGA (8x6)
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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