Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (122999) > Сторінка 780 з 2050
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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IMZC140R011M2HXKSA1 | Infineon Technologies |
Description: IMZC140R011M2HXKSA1Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 147A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 69.1A, 18V Power Dissipation (Max): 568W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 21.7mA Supplier Device Package: PG-TO247-4-17 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 1400 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| TLE55493IC1LRXAMA1 | Infineon Technologies |
Description: SPEED SENSPackaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||
| TLE55493IC1PW250XAMA1 | Infineon Technologies |
Description: SPEED SENSPackaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||
| TLE55493IC1LR4HXAMA1 | Infineon Technologies |
Description: SPEED SENSPackaging: Tape & Box (TB) |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | |||||||||||||||
| FS01MR08A8MA2LMCHPSA1 | Infineon Technologies |
Description: HYBRID PACK DRIVE G2 SICPackaging: Tray |
товару немає в наявності |
Мінімальне замовлення: 12 шт В кошику од. на суму грн. | |||||||||||||||
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IRL3803STRRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 140A D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 140A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V |
на замовлення 298 шт: термін постачання 21-31 дні (днів) |
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| TDA21591AUMA1 | Infineon Technologies |
Description: IFX POWERSTAGE/DRIVER Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
| TDA21591AUMA1 | Infineon Technologies |
Description: IFX POWERSTAGE/DRIVER Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| TDA22561XUMA1 | Infineon Technologies |
Description: POWERSTAGE CE Packaging: Cut Tape (CT) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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TLI4971A050W2US0001XUMA1 | Infineon Technologies |
Description: CURRENT SENS CONS & INDPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Polarization: Unidirectional Sensitivity: 48mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: DC ~ 240kHz Accuracy: ±3.45% Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 250ns Sensor Type: Hall Effect, Open Loop Linearity: ±1.7% For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 30A Grade: Automotive Number of Channels: 1 Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
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TLI4971A050W2US0001XUMA1 | Infineon Technologies |
Description: CURRENT SENS CONS & INDPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Polarization: Unidirectional Sensitivity: 48mV/A Mounting Type: Surface Mount Output: Ratiometric, Voltage Frequency: DC ~ 240kHz Accuracy: ±3.45% Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3.1V ~ 3.5V Response Time: 250ns Sensor Type: Hall Effect, Open Loop Linearity: ±1.7% For Measuring: AC/DC Current - Supply (Max): 25mA Current - Sensing: 30A Grade: Automotive Number of Channels: 1 Qualification: AEC-Q100 |
на замовлення 1484 шт: термін постачання 21-31 дні (днів) |
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IRG4BC10SD-SPBF | Infineon Technologies |
Description: IGBT 600V 14A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 28 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 76ns/815ns Switching Energy: 310µJ (on), 3.28mJ (off) Test Condition: 480V, 8A, 100Ohm, 15V Gate Charge: 15 nC Current - Collector (Ic) (Max): 14 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 38 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IR2103PBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8DIPPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting, Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 100ns, 50ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 210mA, 360mA DigiKey Programmable: Not Verified |
на замовлення 7427 шт: термін постачання 21-31 дні (днів) |
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IRF40DM229 | Infineon Technologies |
Description: MOSFET N-CH 40V 159A DIRECTFETPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric MF Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 159A (Tc) Rds On (Max) @ Id, Vgs: 1.85mOhm @ 97A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 100µA Supplier Device Package: DirectFET™ Isometric MF Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5317 pF @ 25 V |
товару немає в наявності |
Мінімальне замовлення: 4800 шт В кошику од. на суму грн. | ||||||||||||||
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IRLU7843PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 161A IPAKPackaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 161A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: IPAK (TO-251AA) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V |
на замовлення 2090 шт: термін постачання 21-31 дні (днів) |
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IRLU8729-701PBF | Infineon Technologies |
Description: MOSFET N-CH 30V 58A IPAKPackaging: Tube Package / Case: TO-252-4, DPak (3 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.35V @ 25µA Supplier Device Package: I-PAK (LF701) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| CYRF6986-40LTXC | Infineon Technologies |
Description: IC RF TXRX ISM>1GHZ 40QFN Packaging: Tray Package / Case: 40-VFQFN Exposed Pad Sensitivity: -90dBm Mounting Type: Surface Mount Frequency: 2.4GHz Type: TxRx Only Operating Temperature: 0°C ~ 70°C Voltage - Supply: 2.7V ~ 3.6V Power - Output: -5dBm Current - Receiving: 21.2mA Data Rate (Max): 1Mbps Current - Transmitting: 26.2mA Supplier Device Package: 40-QFN (6x6) GPIO: 3 Modulation: DSSS, GFSK RF Family/Standard: General ISM > 1GHz Serial Interfaces: SPI DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| CY15V108QI-20LPXCT | Infineon Technologies |
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN Packaging: Tape & Reel (TR) Package / Case: 8-UQFN Mounting Type: Surface Mount Memory Size: 8Mbit Memory Type: Non-Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.71V ~ 1.89V Technology: FRAM (Ferroelectric RAM) Clock Frequency: 20 MHz Memory Format: FRAM Supplier Device Package: 8-GQFN (3.23x3.28) Memory Interface: SPI Access Time: 20 ns Memory Organization: 1M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | |||||||||||||||
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KP215E1701XTMA1 | Infineon Technologies |
Description: KP215E1701XTMA1Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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KP215E1701XTMA1 | Infineon Technologies |
Description: KP215E1701XTMA1Packaging: Cut Tape (CT) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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AUIRG4BC30U-S | Infineon Technologies |
Description: IGBT 600V 23A 100W D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 17ns/78ns Switching Energy: 360µJ Test Condition: 480V, 12A, 23Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 23 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 92 A Power - Max: 100 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TDA6160-2S | Infineon Technologies |
Description: TDA6160 - MULTI-STANDARD SOUND IPackaging: Bulk |
на замовлення 540 шт: термін постачання 21-31 дні (днів) |
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38DN06B02ELEMXPSA1 | Infineon Technologies |
Description: DIODE STD 600V 5140A BGDELEM1Packaging: Bulk Package / Case: DO-200AC, K-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 5140A Supplier Device Package: BG-D-ELEM-1 Operating Temperature - Junction: 180°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4500 A Current - Reverse Leakage @ Vr: 50 mA @ 600 V |
на замовлення 12 шт: термін постачання 21-31 дні (днів) |
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38DN06B02ELEMPRXPSA1 | Infineon Technologies |
Description: DIODE STD 600V 5140A BGDELEM1Packaging: Tray Package / Case: DO-200AA, A-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 5140A Supplier Device Package: BG-D-ELEM-1 Operating Temperature - Junction: 180°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4500 A Current - Reverse Leakage @ Vr: 50 mA @ 600 V |
товару немає в наявності |
Мінімальне замовлення: 20 шт В кошику од. на суму грн. | ||||||||||||||
| 38DN06ELEMPRXPSA1 | Infineon Technologies |
Description: DIODE STD 600V 5095A EEUPEC0 Packaging: Tray Package / Case: DO-200AB, B-PUK Mounting Type: Clamp On Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 5095A Supplier Device Package: E-EUPEC-0 Operating Temperature - Junction: 180°C (Max) Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 990 mV @ 4500 A Current - Reverse Leakage @ Vr: 50 mA @ 600 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IR2132JPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 44PLCCPackaging: Bulk Package / Case: 44-LCC (J-Lead), 32 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58) Rise / Fall Time (Typ): 80ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA DigiKey Programmable: Not Verified |
на замовлення 5248 шт: термін постачання 21-31 дні (днів) |
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S25FS512SAGMFV011 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 16SOICPackaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O, QPI Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
на замовлення 10 шт: термін постачання 21-31 дні (днів) |
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S25FS064SAGMFI013 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 2ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 2100 шт В кошику од. на суму грн. | ||||||||||||||
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S25FS064SAGMFV013 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Write Cycle Time - Word, Page: 2ms Memory Interface: SPI - Quad I/O, QPI Access Time: 6 ns Memory Organization: 8M x 8 |
товару немає в наявності |
Мінімальне замовлення: 2100 шт В кошику од. на суму грн. | ||||||||||||||
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S25FS064SAGMFV010 | Infineon Technologies |
Description: IC FLASH 64MBIT SPI/QUAD 8SOICPackaging: Tray Package / Case: 8-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 8-SOIC Memory Interface: SPI - Quad I/O, QPI Memory Organization: 8M x 8 DigiKey Programmable: Verified |
на замовлення 1 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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S25FS256SAGMFV003 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1450 шт В кошику од. на суму грн. | ||||||||||||||
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S25FS256SAGMFB003 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Grade: Automotive Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 1450 шт В кошику од. на суму грн. | ||||||||||||||
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S25FS256SAGMFB001 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOICPackaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Grade: Automotive Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 705 шт В кошику од. на суму грн. | ||||||||||||||
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S25FS256SAGMFM003 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Grade: Automotive Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 1450 шт В кошику од. на суму грн. | ||||||||||||||
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S25FS256SAGMFM000 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOICPackaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Grade: Automotive Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 1200 шт В кошику од. на суму грн. | ||||||||||||||
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S25FS256SAGMFM001 | Infineon Technologies |
Description: IC FLASH 256MBIT SPI/QUAD 16SOICPackaging: Tube Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Grade: Automotive Memory Interface: SPI - Quad I/O, QPI Memory Organization: 32M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 705 шт В кошику од. на суму грн. | ||||||||||||||
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S25FS512SAGMFI013 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O, QPI Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1450 шт В кошику од. на суму грн. | ||||||||||||||
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S25FS512SAGMFV013 | Infineon Technologies |
Description: IC FLASH 512MBIT SPI/QUAD 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 2V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Memory Interface: SPI - Quad I/O, QPI Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1450 шт В кошику од. на суму грн. | ||||||||||||||
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IQE012N03LM5CGATMA1 | Infineon Technologies |
Description: IQE012N03LM5CGATMA1Packaging: Tape & Reel (TR) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TTFN-9-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||
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IQE012N03LM5CGATMA1 | Infineon Technologies |
Description: IQE012N03LM5CGATMA1Packaging: Cut Tape (CT) Package / Case: 9-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TTFN-9-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IQE012N03LM5CGSCATMA1 | Infineon Technologies |
Description: IQE012N03LM5CGSCATMA1Packaging: Tape & Reel (TR) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-WHTFN-9-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V |
товару немає в наявності |
Мінімальне замовлення: 6000 шт В кошику од. на суму грн. | ||||||||||||||
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IQE012N03LM5CGSCATMA1 | Infineon Technologies |
Description: IQE012N03LM5CGSCATMA1Packaging: Cut Tape (CT) Package / Case: 9-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-WHTFN-9-1 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BTS700151ESPEVALBRDTOBO1 | Infineon Technologies |
Description: BTS70015-1ESP EVALBRDPackaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Contents: Board(s) Utilized IC / Part: BTS70015-1ESP Embedded: No |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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ISCH57N04NM7VSCATMA1 | Infineon Technologies |
Description: ISCH57N04NM7VSCATMA1Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 443A (Tc) Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 113µA Supplier Device Package: PG-WSON-8-2 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||
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ISCH57N04NM7VSCATMA1 | Infineon Technologies |
Description: ISCH57N04NM7VSCATMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 443A (Tc) Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 15V Power Dissipation (Max): 3W (Ta), 214W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 113µA Supplier Device Package: PG-WSON-8-2 Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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1ED21271S65FXUMA1 | Infineon Technologies |
Description: 1ED21271S65FXUMA1Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 7.2V ~ 22V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 12ns, 12ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: SiC MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 4A, 4A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
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1ED21271S65FXUMA1 | Infineon Technologies |
Description: 1ED21271S65FXUMA1Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 7.2V ~ 22V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 12ns, 12ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: SiC MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 4A, 4A |
на замовлення 1795 шт: термін постачання 21-31 дні (днів) |
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| DF1000R17IE4DB2BOSA1 | Infineon Technologies |
Description: DF1000R17IE4D_B2 - 1700 V, 1000Packaging: Bulk |
на замовлення 398 шт: термін постачання 21-31 дні (днів) |
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CY8C4025AZI-S403T | Infineon Technologies |
Description: IC MCU 32BIT 32KB FLASH 48TQFPPackaging: Tape & Reel (TR) Package / Case: 48-LQFP Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Data Converters: A/D 1x10b Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT Supplier Device Package: 48-TQFP (7x7) Number of I/O: 36 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1500 шт В кошику од. на суму грн. | ||||||||||||||
| CYW88550DCUBGTXTMA1 | Infineon Technologies |
Description: WIRELESS AUTOMOTIVE Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||
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IRG4BC30S-STRLP | Infineon Technologies |
Description: IGBT 600V 34A 100W D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 22ns/540ns Switching Energy: 260µJ (on), 3.45mJ (off) Test Condition: 480V, 18A, 23Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 68 A Power - Max: 100 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IRG4BC30S-STRLP | Infineon Technologies |
Description: IGBT 600V 34A 100W D2PAKPackaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 22ns/540ns Switching Energy: 260µJ (on), 3.45mJ (off) Test Condition: 480V, 18A, 23Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 68 A Power - Max: 100 W |
на замовлення 353 шт: термін постачання 21-31 дні (днів) |
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IRG4BC30SPBF | Infineon Technologies |
Description: IGBT 600V 34A TO-220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 22ns/540ns Switching Energy: 260µJ (on), 3.45mJ (off) Test Condition: 480V, 18A, 23Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 68 A Power - Max: 100 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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AUIRG4BC30S-S | Infineon Technologies |
Description: IGBT 600V 34A 100W D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 22ns/540ns Switching Energy: 260µJ (on), 3.45mJ (off) Test Condition: 480V, 18A, 23Ohm, 15V Gate Charge: 50 nC Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 68 A Power - Max: 100 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| FS02MR08A7MA2BHPSA1 | Infineon Technologies |
Description: FS02MR08A7MA2BHPSA1Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 750V Current - Continuous Drain (Id) @ 25°C: 430A Input Capacitance (Ciss) (Max) @ Vds: 26000pF @ 470V Rds On (Max) @ Id, Vgs: 2.65mOhm @ 430A, 18V Gate Charge (Qg) (Max) @ Vgs: 890nC @ 18V Vgs(th) (Max) @ Id: 4.55V @ 120mA |
на замовлення 3 шт: термін постачання 21-31 дні (днів) |
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FS01MR08A8MA2CHPSA1 | Infineon Technologies |
Description: FS01MR08A8MA2CHPSA1Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 6 N-Channel (Phase Leg) Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Drain to Source Voltage (Vdss): 750V Current - Continuous Drain (Id) @ 25°C: 620A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 43000pF @ 470V Rds On (Max) @ Id, Vgs: 1.69mOhm @ 620A, 18V Gate Charge (Qg) (Max) @ Vgs: 1500nC @ 18V Vgs(th) (Max) @ Id: 4.55V @ 200mA |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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CY8C4025LQIT412TXUMA1 | Infineon Technologies |
Description: HMI-GROWTH PSOC4Packaging: Tape & Reel (TR) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 32KB (32K x 8) RAM Size: 4K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0+ Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V Connectivity: I2C, Microwire, SPI, SSP, UART/USART Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT Supplier Device Package: 24-QFN (4x4) Number of I/O: 19 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||
|
S26KL512SDABHV020 | Infineon Technologies |
Description: IC FLASH 256MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Memory Interface: HyperBus Access Time: 96 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 3380 шт В кошику од. на суму грн. | ||||||||||||||
|
BC817-16 | Infineon Technologies |
Description: TRANS NPN 45V 0.8A SOT23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT23-3 (TO-236) Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 310 mW |
на замовлення 19999 шт: термін постачання 21-31 дні (днів) |
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| V10035200NHPSA1 | Infineon Technologies |
Description: CLAMP DISK DEVICES 75MM HOUSINGS Packaging: Tray Color: Natural Length: 3.543" (90.00mm) Shape: Rectangular Type: Mount Width: 3.543" (90.00mm) Height: 2.362" (60.00mm) |
товару немає в наявності |
В кошику од. на суму грн. |
| IMZC140R011M2HXKSA1 |
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Виробник: Infineon Technologies
Description: IMZC140R011M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 147A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 69.1A, 18V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 21.7mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1400 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 1000 V
Description: IMZC140R011M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 147A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 69.1A, 18V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 21.7mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1400 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| TLE55493IC1LRXAMA1 |
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товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLE55493IC1PW250XAMA1 |
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товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLE55493IC1LR4HXAMA1 |
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товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| FS01MR08A8MA2LMCHPSA1 |
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товару немає в наявності
Мінімальне замовлення: 12 шт
В кошику
од. на суму грн.
| IRL3803STRRPBF |
![]() |
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 140A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Description: MOSFET N-CH 30V 140A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 189+ | 106.04 грн |
| TLI4971A050W2US0001XUMA1 |
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Виробник: Infineon Technologies
Description: CURRENT SENS CONS & IND
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±1.7%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 30A
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
Description: CURRENT SENS CONS & IND
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±1.7%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 30A
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
од. на суму грн.
| TLI4971A050W2US0001XUMA1 |
![]() |
Виробник: Infineon Technologies
Description: CURRENT SENS CONS & IND
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±1.7%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 30A
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
Description: CURRENT SENS CONS & IND
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±1.7%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 30A
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
на замовлення 1484 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 310.74 грн |
| 5+ | 268.04 грн |
| 10+ | 256.47 грн |
| 25+ | 227.85 грн |
| 50+ | 219.04 грн |
| 100+ | 210.97 грн |
| 500+ | 191.54 грн |
| IRG4BC10SD-SPBF |
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Виробник: Infineon Technologies
Description: IGBT 600V 14A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 76ns/815ns
Switching Energy: 310µJ (on), 3.28mJ (off)
Test Condition: 480V, 8A, 100Ohm, 15V
Gate Charge: 15 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 38 W
Description: IGBT 600V 14A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 76ns/815ns
Switching Energy: 310µJ (on), 3.28mJ (off)
Test Condition: 480V, 8A, 100Ohm, 15V
Gate Charge: 15 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 38 W
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| IR2103PBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 7427 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 150+ | 135.84 грн |
| IRF40DM229 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 159A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 159A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 97A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5317 pF @ 25 V
Description: MOSFET N-CH 40V 159A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 159A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 97A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5317 pF @ 25 V
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Мінімальне замовлення: 4800 шт
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| IRLU7843PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 161A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
Description: MOSFET N-CH 30V 161A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
на замовлення 2090 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 233+ | 86.03 грн |
| IRLU8729-701PBF |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 58A IPAK
Packaging: Tube
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: I-PAK (LF701)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
Description: MOSFET N-CH 30V 58A IPAK
Packaging: Tube
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: I-PAK (LF701)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
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| CYRF6986-40LTXC |
Виробник: Infineon Technologies
Description: IC RF TXRX ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: -5dBm
Current - Receiving: 21.2mA
Data Rate (Max): 1Mbps
Current - Transmitting: 26.2mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 3
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
Description: IC RF TXRX ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: -5dBm
Current - Receiving: 21.2mA
Data Rate (Max): 1Mbps
Current - Transmitting: 26.2mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 3
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
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| CY15V108QI-20LPXCT |
Виробник: Infineon Technologies
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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Мінімальне замовлення: 2500 шт
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| KP215E1701XTMA1 |
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на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 177.26 грн |
| KP215E1701XTMA1 |
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на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 270.44 грн |
| 5+ | 233.12 грн |
| 10+ | 222.82 грн |
| 25+ | 197.73 грн |
| 50+ | 189.96 грн |
| 100+ | 182.82 грн |
| 500+ | 165.70 грн |
| AUIRG4BC30U-S |
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Виробник: Infineon Technologies
Description: IGBT 600V 23A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 360µJ
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
Description: IGBT 600V 23A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 360µJ
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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| TDA6160-2S |
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на замовлення 540 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 143+ | 140.05 грн |
| 38DN06B02ELEMXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE STD 600V 5140A BGDELEM1
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5140A
Supplier Device Package: BG-D-ELEM-1
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4500 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
Description: DIODE STD 600V 5140A BGDELEM1
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5140A
Supplier Device Package: BG-D-ELEM-1
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4500 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 13256.35 грн |
| 38DN06B02ELEMPRXPSA1 |
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Виробник: Infineon Technologies
Description: DIODE STD 600V 5140A BGDELEM1
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5140A
Supplier Device Package: BG-D-ELEM-1
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4500 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
Description: DIODE STD 600V 5140A BGDELEM1
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5140A
Supplier Device Package: BG-D-ELEM-1
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4500 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
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Мінімальне замовлення: 20 шт
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| 38DN06ELEMPRXPSA1 |
Виробник: Infineon Technologies
Description: DIODE STD 600V 5095A EEUPEC0
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5095A
Supplier Device Package: E-EUPEC-0
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 4500 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
Description: DIODE STD 600V 5095A EEUPEC0
Packaging: Tray
Package / Case: DO-200AB, B-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5095A
Supplier Device Package: E-EUPEC-0
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 990 mV @ 4500 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
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| IR2132JPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Bulk
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 5248 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 50+ | 396.99 грн |
| S25FS512SAGMFV011 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 774.91 грн |
| 10+ | 693.15 грн |
| S25FS064SAGMFI013 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 2100 шт
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| S25FS064SAGMFV013 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 8M x 8
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 2ms
Memory Interface: SPI - Quad I/O, QPI
Access Time: 6 ns
Memory Organization: 8M x 8
товару немає в наявності
Мінімальне замовлення: 2100 шт
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| S25FS064SAGMFV010 |
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Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
| S25FS256SAGMFV003 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1450 шт
В кошику
од. на суму грн.
| S25FS256SAGMFB003 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1450 шт
В кошику
од. на суму грн.
| S25FS256SAGMFB001 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 705 шт
В кошику
од. на суму грн.
| S25FS256SAGMFM003 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1450 шт
В кошику
од. на суму грн.
| S25FS256SAGMFM000 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 1200 шт
В кошику
од. на суму грн.
| S25FS256SAGMFM001 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 256MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Grade: Automotive
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 705 шт
В кошику
од. на суму грн.
| S25FS512SAGMFI013 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1450 шт
В кошику
од. на суму грн.
| S25FS512SAGMFV013 |
![]() |
Виробник: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT SPI/QUAD 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1450 шт
В кошику
од. на суму грн.
| IQE012N03LM5CGATMA1 |
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Виробник: Infineon Technologies
Description: IQE012N03LM5CGATMA1
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Description: IQE012N03LM5CGATMA1
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IQE012N03LM5CGATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IQE012N03LM5CGATMA1
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Description: IQE012N03LM5CGATMA1
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| IQE012N03LM5CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IQE012N03LM5CGSCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Description: IQE012N03LM5CGSCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
товару немає в наявності
Мінімальне замовлення: 6000 шт
В кошику
од. на суму грн.
| IQE012N03LM5CGSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: IQE012N03LM5CGSCATMA1
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
Description: IQE012N03LM5CGSCATMA1
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 224A (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
товару немає в наявності
В кошику
од. на суму грн.
| BTS700151ESPEVALBRDTOBO1 |
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Виробник: Infineon Technologies
Description: BTS70015-1ESP EVALBRD
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS70015-1ESP
Embedded: No
Description: BTS70015-1ESP EVALBRD
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS70015-1ESP
Embedded: No
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7680.11 грн |
| ISCH57N04NM7VSCATMA1 |
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Виробник: Infineon Technologies
Description: ISCH57N04NM7VSCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 443A (Tc)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 113µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V
Description: ISCH57N04NM7VSCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 443A (Tc)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 113µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
В кошику
од. на суму грн.
| ISCH57N04NM7VSCATMA1 |
![]() |
Виробник: Infineon Technologies
Description: ISCH57N04NM7VSCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 443A (Tc)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 113µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V
Description: ISCH57N04NM7VSCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 443A (Tc)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 113µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 20 V
товару немає в наявності
В кошику
од. на суму грн.
| 1ED21271S65FXUMA1 |
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Виробник: Infineon Technologies
Description: 1ED21271S65FXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.2V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
Description: 1ED21271S65FXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.2V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| 1ED21271S65FXUMA1 |
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Виробник: Infineon Technologies
Description: 1ED21271S65FXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.2V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
Description: 1ED21271S65FXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.2V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
на замовлення 1795 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 99.96 грн |
| 10+ | 70.22 грн |
| 25+ | 63.67 грн |
| 100+ | 53.00 грн |
| 250+ | 49.79 грн |
| 500+ | 47.86 грн |
| 1000+ | 46.55 грн |
| DF1000R17IE4DB2BOSA1 |
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на замовлення 398 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 41720.25 грн |
| CY8C4025AZI-S403T |
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Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 32KB FLASH 48TQFP
Packaging: Tape & Reel (TR)
Package / Case: 48-LQFP
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 1x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 48-TQFP (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1500 шт
В кошику
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| CYW88550DCUBGTXTMA1 |
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IRG4BC30S-STRLP |
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Виробник: Infineon Technologies
Description: IGBT 600V 34A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Description: IGBT 600V 34A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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| IRG4BC30S-STRLP |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 34A 100W D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Description: IGBT 600V 34A 100W D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
на замовлення 353 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 154+ | 132.44 грн |
| IRG4BC30SPBF |
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Виробник: Infineon Technologies
Description: IGBT 600V 34A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Description: IGBT 600V 34A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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| AUIRG4BC30S-S |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 34A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
Description: IGBT 600V 34A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
товару немає в наявності
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| FS02MR08A7MA2BHPSA1 |
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Виробник: Infineon Technologies
Description: FS02MR08A7MA2BHPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 430A
Input Capacitance (Ciss) (Max) @ Vds: 26000pF @ 470V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 430A, 18V
Gate Charge (Qg) (Max) @ Vgs: 890nC @ 18V
Vgs(th) (Max) @ Id: 4.55V @ 120mA
Description: FS02MR08A7MA2BHPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 430A
Input Capacitance (Ciss) (Max) @ Vds: 26000pF @ 470V
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 430A, 18V
Gate Charge (Qg) (Max) @ Vgs: 890nC @ 18V
Vgs(th) (Max) @ Id: 4.55V @ 120mA
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 51196.60 грн |
| FS01MR08A8MA2CHPSA1 |
![]() |
Виробник: Infineon Technologies
Description: FS01MR08A8MA2CHPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 620A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 43000pF @ 470V
Rds On (Max) @ Id, Vgs: 1.69mOhm @ 620A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1500nC @ 18V
Vgs(th) (Max) @ Id: 4.55V @ 200mA
Description: FS01MR08A8MA2CHPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 750V
Current - Continuous Drain (Id) @ 25°C: 620A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 43000pF @ 470V
Rds On (Max) @ Id, Vgs: 1.69mOhm @ 620A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1500nC @ 18V
Vgs(th) (Max) @ Id: 4.55V @ 200mA
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 74852.21 грн |
| CY8C4025LQIT412TXUMA1 |
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Виробник: Infineon Technologies
Description: HMI-GROWTH PSOC4
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, Microwire, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 19
Description: HMI-GROWTH PSOC4
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, Microwire, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 19
товару немає в наявності
Мінімальне замовлення: 2500 шт
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| S26KL512SDABHV020 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 3380 шт
В кошику
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| BC817-16 |
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Виробник: Infineon Technologies
Description: TRANS NPN 45V 0.8A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT23-3 (TO-236)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
Description: TRANS NPN 45V 0.8A SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT23-3 (TO-236)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 310 mW
на замовлення 19999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8955+ | 1.99 грн |
| V10035200NHPSA1 |
Виробник: Infineon Technologies
Description: CLAMP DISK DEVICES 75MM HOUSINGS
Packaging: Tray
Color: Natural
Length: 3.543" (90.00mm)
Shape: Rectangular
Type: Mount
Width: 3.543" (90.00mm)
Height: 2.362" (60.00mm)
Description: CLAMP DISK DEVICES 75MM HOUSINGS
Packaging: Tray
Color: Natural
Length: 3.543" (90.00mm)
Shape: Rectangular
Type: Mount
Width: 3.543" (90.00mm)
Height: 2.362" (60.00mm)
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