Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117829) > Сторінка 774 з 1964

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TLE49SRC8DXUMA1 TLE49SRC8DXUMA1 Infineon Technologies infineon-tle49sr-c8-p8-s8-datasheet-en.pdf Description: TLE49SRC8DXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
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TLE49SRC8DXUMA1 TLE49SRC8DXUMA1 Infineon Technologies infineon-tle49sr-c8-p8-s8-datasheet-en.pdf Description: TLE49SRC8DXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
1+422.00 грн
5+365.89 грн
10+350.78 грн
25+312.32 грн
50+300.77 грн
100+290.18 грн
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CYPD8125-48LDXIT CYPD8125-48LDXIT Infineon Technologies Infineon-EZ-PD_TM_CCG8_USB_Type-C_port_controller-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c85ecb34701863a96d4321bd2&da=t Description: IC USB MCU 256KB FLASH 48-UFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (256kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 26
на замовлення 2435 шт:
термін постачання 21-31 дні (днів)
1+351.41 грн
10+258.33 грн
25+238.32 грн
100+203.02 грн
250+193.18 грн
500+187.25 грн
1000+179.38 грн
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TLD11731STDEVALTOBO1 TLD11731STDEVALTOBO1 Infineon Technologies infineon-tld1173-1std-eval-ug-usermanual-en.pdf Description: TLD1173-1STD_EVAL
Packaging: Box
Voltage - Output: 6.5V ~ 18.5V
Voltage - Input: 8V ~ 21V
Contents: Board(s)
Current - Output / Channel: 400mA
Utilized IC / Part: TLD1173
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+13005.18 грн
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IRG8P08N120KDPBF IRG8P08N120KDPBF Infineon Technologies IRG8x08N120KD.pdf Description: IGBT 1200V 15A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 20ns/160ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 600V, 5A, 47Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 89 W
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IRG8P08N120KD-EPBF IRG8P08N120KD-EPBF Infineon Technologies IRG8x08N120KD.pdf Description: IGBT 1200V 15A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/160ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 600V, 5A, 47Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 89 W
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ISG0613N04NM6HSCATMA1 ISG0613N04NM6HSCATMA1 Infineon Technologies Infineon-ISG0613N04NM6HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951b48e4cf5 Description: MOSFET 2N-CH 40V 42A 10WHITFN
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-WHITFN-10-1
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ISG0613N04NM6HSCATMA1 ISG0613N04NM6HSCATMA1 Infineon Technologies Infineon-ISG0613N04NM6HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951b48e4cf5 Description: MOSFET 2N-CH 40V 42A 10WHITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-WHITFN-10-1
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IPI072N10N3GXKSA1 IPI072N10N3GXKSA1 Infineon Technologies Infineon-IPP072N10N3_G-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e012393bed2d20405 Description: MOSFET N-CH 100V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
178+114.49 грн
Мінімальне замовлення: 178
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CY8C3866LTI-207 CY8C3866LTI-207 Infineon Technologies Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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IRF3205ZPBFXKMA1 Infineon Technologies Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
на замовлення 950 шт:
термін постачання 21-31 дні (днів)
2+162.37 грн
50+76.00 грн
100+68.16 грн
500+51.07 грн
Мінімальне замовлення: 2
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IRFB4332PBFXKMA1 Infineon Technologies Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
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IMZC120R053M2HXKSA1 IMZC120R053M2HXKSA1 Infineon Technologies IMZC120R053M2HXKSA1.pdf Description: SICFET N-CH 1200V 38A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 13A, 18V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 800 V
на замовлення 366 шт:
термін постачання 21-31 дні (днів)
1+632.22 грн
30+358.69 грн
120+303.89 грн
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TDM22545DXUMA1 TDM22545DXUMA1 Infineon Technologies Infineon-TDM22545D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec8e1decc13b0 Description: POWERSTAGE MODULE
Features: Adjustable Output, Remote On/Off
Packaging: Tape & Reel (TR)
Package / Case: 72-LGA Module
Size / Dimension: 0.39" L x 0.35" W x 0.20" H (10.0mm x 9.0mm x 5.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 125°C
Applications: ITE (Commercial)
Voltage - Input (Max): 16V
Current - Output (Max): 160A
Supplier Device Package: LG-MLGA-72-5
Voltage - Input (Min): 4.25V
Voltage - Output 1: 0.225 ~ 3V
Control Features: Enable, Active High
Power (Watts): 480 W
Number of Outputs: 1
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TDM22545DXUMA1 TDM22545DXUMA1 Infineon Technologies Infineon-TDM22545D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec8e1decc13b0 Description: POWERSTAGE MODULE
Features: Adjustable Output, Remote On/Off
Packaging: Cut Tape (CT)
Package / Case: 72-LGA Module
Size / Dimension: 0.39" L x 0.35" W x 0.20" H (10.0mm x 9.0mm x 5.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 125°C
Applications: ITE (Commercial)
Voltage - Input (Max): 16V
Current - Output (Max): 160A
Supplier Device Package: LG-MLGA-72-5
Voltage - Input (Min): 4.25V
Voltage - Output 1: 0.225 ~ 3V
Control Features: Enable, Active High
Power (Watts): 480 W
Number of Outputs: 1
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
1+1372.68 грн
5+1272.29 грн
10+1251.75 грн
25+1149.54 грн
50+1130.84 грн
100+1112.44 грн
250+1082.61 грн
В кошику  од. на суму  грн.
IMDQ65R007M2HXUMA1 IMDQ65R007M2HXUMA1 Infineon Technologies Infineon-IMDQ65R007M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934d980ca73a34 Description: IMDQ65R007M2HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 937W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
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IMDQ65R007M2HXUMA1 IMDQ65R007M2HXUMA1 Infineon Technologies Infineon-IMDQ65R007M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934d980ca73a34 Description: IMDQ65R007M2HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 937W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
на замовлення 299 шт:
термін постачання 21-31 дні (днів)
1+1912.34 грн
10+1485.90 грн
25+1397.01 грн
100+1219.38 грн
250+1175.69 грн
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AIMCQ120R080M1TXTMA1 AIMCQ120R080M1TXTMA1 Infineon Technologies AIMCQ120R080M1T_v1.10_en.pdf Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R080M1TXTMA1 AIMCQ120R080M1TXTMA1 Infineon Technologies AIMCQ120R080M1T_v1.10_en.pdf Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
на замовлення 620 шт:
термін постачання 21-31 дні (днів)
1+663.59 грн
10+439.61 грн
100+357.83 грн
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S29GL01GS11TFV020 S29GL01GS11TFV020 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
1+1096.58 грн
10+979.75 грн
25+949.16 грн
91+850.63 грн
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FZ675R65KE4NPSA1 FZ675R65KE4NPSA1 Infineon Technologies Infineon-FZ675R65KE4-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194d08c52241d01 Description: IGBT MODULE 6.5KV 675A 2.4MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -50°C ~ 135°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 675A
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 675 A
Voltage - Collector Emitter Breakdown (Max): 6.5 kV
Power - Max: 2.4 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 163000 pF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+101438.84 грн
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IR2102PBF IR2102PBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 32555 шт:
термін постачання 21-31 дні (днів)
98+206.57 грн
Мінімальне замовлення: 98
В кошику  од. на суму  грн.
IR2102PBF IR2102PBF Infineon Technologies IRSDS17613-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
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IRFB7434GPBF IRFB7434GPBF Infineon Technologies IR_PartNumberingSystem.pdf Description: MOSFET N CH 40V 195A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
2+9931.55 грн
Мінімальне замовлення: 2
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CY8C4148AZES595TXUMA1 CY8C4148AZES595TXUMA1 Infineon Technologies infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR, Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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AUIRL1404S AUIRL1404S Infineon Technologies AUIRL1404S%2CL.pdf Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
136+145.66 грн
Мінімальне замовлення: 136
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AUIRL1404S AUIRL1404S Infineon Technologies AUIRL1404S%2CL.pdf Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
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AUIRL1404ZS AUIRL1404ZS Infineon Technologies INFN-S-A0002298850-1.pdf?t.download=true&u=5oefqw Description: AUIRL1404ZS - 20V-40V N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
156+127.78 грн
Мінімальне замовлення: 156
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FS1000R08A7P3BHPSA1 Infineon Technologies infineon-fs1000r08a7p3b-datasheet-en.pdf Description: IGBT MOD 750V 600A AGHDG2XT-7611
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-HDG2XT-7611
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+26417.46 грн
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IPT034N15NM6ATMA1 IPT034N15NM6ATMA1 Infineon Technologies infineon-ipt034n15nm6-datasheet-en.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 179µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
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IPT034N15NM6ATMA1 IPT034N15NM6ATMA1 Infineon Technologies infineon-ipt034n15nm6-datasheet-en.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 179µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
на замовлення 1508 шт:
термін постачання 21-31 дні (днів)
1+341.99 грн
10+218.90 грн
100+156.05 грн
500+139.10 грн
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CYPM1111-40LQXI CYPM1111-40LQXI Infineon Technologies Infineon-PMG1-S1_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea45a6733a Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D - 8bit SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 17
DigiKey Programmable: Not Verified
на замовлення 9639 шт:
термін постачання 21-31 дні (днів)
2+224.34 грн
10+162.02 грн
25+148.56 грн
100+125.57 грн
490+115.09 грн
980+111.80 грн
1470+108.34 грн
2940+105.96 грн
5390+104.23 грн
Мінімальне замовлення: 2
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CYPM1111-40LQXIT CYPM1111-40LQXIT Infineon Technologies Infineon-PMG1-S1_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea45a6733a Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 17
DigiKey Programmable: Not Verified
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IPF011N08NM6ATMA1 IPF011N08NM6ATMA1 Infineon Technologies infineon-ipf011n08nm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 271A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 279µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
на замовлення 988 шт:
термін постачання 21-31 дні (днів)
1+520.83 грн
10+340.13 грн
100+259.77 грн
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RMBABYCRYSOFT1 RMBABYCRYSOFT1 Infineon Technologies Description: SOFTWARE
Packaging: Electronic Delivery
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IGLT65R055B2AUMA1 IGLT65R055B2AUMA1 Infineon Technologies infineon-iglt65r055b2-pds-datasheet-en.pdf Description: GANFET N-CH 650V 21.8A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 9A
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V
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IGLT65R055B2AUMA1 IGLT65R055B2AUMA1 Infineon Technologies infineon-iglt65r055b2-pds-datasheet-en.pdf Description: GANFET N-CH 650V 21.8A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 9A
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V
на замовлення 1456 шт:
термін постачання 21-31 дні (днів)
1+749.09 грн
10+499.51 грн
100+419.80 грн
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IRS9103AXTSA1 IRS9103AXTSA1 Infineon Technologies Infineon-IRS9103A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c92416ca50192b01494a37cc3 Description: IRS9103AXTSA1
Packaging: Tape & Reel (TR)
Package / Case: 9-WFBGA, WLBGA
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.6V
Supplier Device Package: PG-WFWLB-9-21
Grade: Automotive
Number of Channels: 1
Current - Supply: 4 mA
Qualification: AEC-Q100
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IRS9103AXTSA1 IRS9103AXTSA1 Infineon Technologies Infineon-IRS9103A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c92416ca50192b01494a37cc3 Description: IRS9103AXTSA1
Packaging: Cut Tape (CT)
Package / Case: 9-WFBGA, WLBGA
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.6V
Supplier Device Package: PG-WFWLB-9-21
Grade: Automotive
Number of Channels: 1
Current - Supply: 4 mA
Qualification: AEC-Q100
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
1+362.39 грн
10+266.33 грн
25+245.73 грн
100+209.33 грн
250+199.19 грн
500+193.09 грн
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BCP51H6327XTSA1 BCP51H6327XTSA1 Infineon Technologies Infineon-BCP51_BCP52_BCP53-DS-v01_01-en.pdf?fileId=db3a304314dca38901156ad4194521c9 Description: TRANS PNP 45V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)
1771+11.42 грн
Мінімальне замовлення: 1771
В кошику  од. на суму  грн.
PVA3054NPBF PVA3054NPBF Infineon Technologies pva30n.pdf?fileId=5546d462533600a4015356839c762923 Description: SSR RELAY SPST-NO 50MA 0-300V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 50 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
на замовлення 759 шт:
термін постачання 21-31 дні (днів)
1+485.54 грн
10+416.72 грн
25+397.97 грн
50+360.68 грн
100+348.30 грн
250+332.58 грн
500+315.89 грн
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IMT44R025M2HXTMA2 IMT44R025M2HXTMA2 Infineon Technologies infineon-imt44r025m2h-datasheet-en.pdf Description: SICFET N-CH 440V 68A PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 440 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
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IMT44R025M2HXTMA2 IMT44R025M2HXTMA2 Infineon Technologies infineon-imt44r025m2h-datasheet-en.pdf Description: SICFET N-CH 440V 68A PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 440 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
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IRLR3802PBF IRLR3802PBF Infineon Technologies IRSDS11016-1.pdf?t.download=true&u=5oefqw Description: IRLR3802 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V
на замовлення 2596 шт:
термін постачання 21-31 дні (днів)
429+47.25 грн
Мінімальне замовлення: 429
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EVALTDA3880618VOUTTOBO1 EVALTDA3880618VOUTTOBO1 Infineon Technologies Infineon-Evalaution_board_TDA38806_P1V8_user_guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190e3b887585f05 Description: EVAL BOARD FOR TDA38806
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38806
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+3981.56 грн
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EVALTDA388065VOUTTOBO1 EVALTDA388065VOUTTOBO1 Infineon Technologies Infineon-Evaluation_board_EVAL_TDA38807_5Vout-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231e79c90cfe Description: EVAL BOARD FOR TDA38806
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 12V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38806
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+3981.56 грн
В кошику  од. на суму  грн.
EVALTDA3880633VOUTTOBO1 EVALTDA3880633VOUTTOBO1 Infineon Technologies Infineon-TDA38806-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190ba4e6fe45b05 Description: EVAL BOARD FOR TDA38806
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 12V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38806
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+3981.56 грн
В кошику  од. на суму  грн.
IR21084PBF IR21084PBF Infineon Technologies ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
99+205.22 грн
Мінімальне замовлення: 99
В кошику  од. на суму  грн.
IR21084PBF IR21084PBF Infineon Technologies ir2108.pdf?fileId=5546d462533600a4015355c7dc321676 Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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CY7C1168V18-375BZC CY7C1168V18-375BZC Infineon Technologies Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 375 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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CY7C1168V18-400BZC CY7C1168V18-400BZC Infineon Technologies Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
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TC357TA64F300SABKXUMA2 TC357TA64F300SABKXUMA2 Infineon Technologies 4_cip10528.pdf Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 1.44M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 16x12b SAR, Sigma-Delta
Core Size: 32-Bit 5-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-13
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1+2601.82 грн
10+2040.77 грн
25+1924.69 грн
100+1686.53 грн
250+1629.46 грн
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CY8CLED08-48LFXI CY8CLED08-48LFXI Infineon Technologies CY8CLED08.pdf Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 44
DigiKey Programmable: Not Verified
на замовлення 1033 шт:
термін постачання 21-31 дні (днів)
1+964.01 грн
10+732.60 грн
25+683.76 грн
100+591.29 грн
260+566.36 грн
520+552.04 грн
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IRS21864PBF IRS21864PBF Infineon Technologies irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
на замовлення 813 шт:
термін постачання 21-31 дні (днів)
2+268.26 грн
10+195.18 грн
25+179.44 грн
100+152.11 грн
250+144.34 грн
500+139.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
EVALISO4DIR1400HTOBO1 EVALISO4DIR1400HTOBO1 Infineon Technologies Infineon-Digital_Isolators_EVAL_ISO_4DIR1400H-UserManual-v01_00-EN.pdf Description: EVAL BOARD FOR 4DIR1400H
Packaging: Bulk
Function: Digital Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: 4DIR1400H
Primary Attributes: 4-Channel (Quad)
Embedded: No
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+3642.71 грн
В кошику  од. на суму  грн.
CYW89570BFFBGTXUMA1 Infineon Technologies Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
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IR2117PBF IR2117PBF Infineon Technologies ir2117.pdf?fileId=5546d462533600a4015355c84331168d Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 1420 шт:
термін постачання 21-31 дні (днів)
2+222.77 грн
10+160.96 грн
50+139.62 грн
100+124.82 грн
250+118.27 грн
500+114.32 грн
1000+109.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
EVALTDA38740A33VOUTTOBO1 Infineon Technologies infineon-evaluation-board-eval-tda38740a-xxvout-usermanual-en.pdf Description: EVALTDA38740A33VOUTTOBO1
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 17V
Current - Output: 40A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38740A
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+4945.58 грн
В кошику  од. на суму  грн.
S29GL256S11TFV020 S29GL256S11TFV020 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
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CY62167EV30LL-45BVIT CY62167EV30LL-45BVIT Infineon Technologies Infineon-CY62167EV30_MoBL_16-Mbit_(1M_x_16_2M_x_8)_Static_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe4ea831c9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
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TLE49SRC8DXUMA1 infineon-tle49sr-c8-p8-s8-datasheet-en.pdf
TLE49SRC8DXUMA1
Виробник: Infineon Technologies
Description: TLE49SRC8DXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
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TLE49SRC8DXUMA1 infineon-tle49sr-c8-p8-s8-datasheet-en.pdf
TLE49SRC8DXUMA1
Виробник: Infineon Technologies
Description: TLE49SRC8DXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: PWM, SPC, SENT
Operating Temperature: -40°C ~ 150°C
Termination Style: SMD (SMT) Tab
Voltage - Supply: 4.5V ~ 5.5V
Actuator Type: External Magnet, Not Included
For Measuring: Angle
Supplier Device Package: PG-TDSO-8-20
Rotation Angle - Electrical, Mechanical: 0° ~ 360°
Output Signal: Digital
на замовлення 200 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+422.00 грн
5+365.89 грн
10+350.78 грн
25+312.32 грн
50+300.77 грн
100+290.18 грн
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CYPD8125-48LDXIT Infineon-EZ-PD_TM_CCG8_USB_Type-C_port_controller-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c85ecb34701863a96d4321bd2&da=t
CYPD8125-48LDXIT
Виробник: Infineon Technologies
Description: IC USB MCU 256KB FLASH 48-UFQFN
Packaging: Cut Tape (CT)
Package / Case: 48-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART, USB
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (256kB), ROM (96kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0+
Supplier Device Package: 48-QFN (6x6)
Number of I/O: 26
на замовлення 2435 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+351.41 грн
10+258.33 грн
25+238.32 грн
100+203.02 грн
250+193.18 грн
500+187.25 грн
1000+179.38 грн
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TLD11731STDEVALTOBO1 infineon-tld1173-1std-eval-ug-usermanual-en.pdf
TLD11731STDEVALTOBO1
Виробник: Infineon Technologies
Description: TLD1173-1STD_EVAL
Packaging: Box
Voltage - Output: 6.5V ~ 18.5V
Voltage - Input: 8V ~ 21V
Contents: Board(s)
Current - Output / Channel: 400mA
Utilized IC / Part: TLD1173
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+13005.18 грн
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IRG8P08N120KDPBF IRG8x08N120KD.pdf
IRG8P08N120KDPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 15A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 20ns/160ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 600V, 5A, 47Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 89 W
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IRG8P08N120KD-EPBF IRG8x08N120KD.pdf
IRG8P08N120KD-EPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 15A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/160ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 600V, 5A, 47Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 89 W
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ISG0613N04NM6HSCATMA1 Infineon-ISG0613N04NM6HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951b48e4cf5
ISG0613N04NM6HSCATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 42A 10WHITFN
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-WHITFN-10-1
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ISG0613N04NM6HSCATMA1 Infineon-ISG0613N04NM6HSC-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d8951b48e4cf5
ISG0613N04NM6HSCATMA1
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 40V 42A 10WHITFN
Packaging: Cut Tape (CT)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 299A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 20V
Rds On (Max) @ Id, Vgs: 0.88mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 104nC @ 10V
Vgs(th) (Max) @ Id: 2.8V @ 780µA
Supplier Device Package: PG-WHITFN-10-1
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IPI072N10N3GXKSA1 Infineon-IPP072N10N3_G-DS-v02_01-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e012393bed2d20405
IPI072N10N3GXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 80A TO262-3
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4910 pF @ 50 V
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
178+114.49 грн
Мінімальне замовлення: 178
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CY8C3866LTI-207 Infineon-PSoC_3_CY8C38_Programmable_System-on-Chip-DataSheet-v34_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec70ebd3dce&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY8C3866LTI-207
Виробник: Infineon Technologies
Description: IC MCU 8BIT 64KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 67MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 2K x 8
Core Processor: 8051
Data Converters: A/D 16x20b; D/A 2x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: EBI/EMI, I2C, LINbus, SPI, UART/USART, USB
Peripherals: CapSense, DMA, LCD, POR, PWM, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 38
DigiKey Programmable: Not Verified
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IRF3205ZPBFXKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
на замовлення 950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+162.37 грн
50+76.00 грн
100+68.16 грн
500+51.07 грн
Мінімальне замовлення: 2
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IRFB4332PBFXKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 250V 60A TO220AB
Packaging: Tube
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IMZC120R053M2HXKSA1 IMZC120R053M2HXKSA1.pdf
IMZC120R053M2HXKSA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 38A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 13A, 18V
Power Dissipation (Max): 182W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 800 V
на замовлення 366 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+632.22 грн
30+358.69 грн
120+303.89 грн
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TDM22545DXUMA1 Infineon-TDM22545D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec8e1decc13b0
TDM22545DXUMA1
Виробник: Infineon Technologies
Description: POWERSTAGE MODULE
Features: Adjustable Output, Remote On/Off
Packaging: Tape & Reel (TR)
Package / Case: 72-LGA Module
Size / Dimension: 0.39" L x 0.35" W x 0.20" H (10.0mm x 9.0mm x 5.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 125°C
Applications: ITE (Commercial)
Voltage - Input (Max): 16V
Current - Output (Max): 160A
Supplier Device Package: LG-MLGA-72-5
Voltage - Input (Min): 4.25V
Voltage - Output 1: 0.225 ~ 3V
Control Features: Enable, Active High
Power (Watts): 480 W
Number of Outputs: 1
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TDM22545DXUMA1 Infineon-TDM22545D-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ec8e1decc13b0
TDM22545DXUMA1
Виробник: Infineon Technologies
Description: POWERSTAGE MODULE
Features: Adjustable Output, Remote On/Off
Packaging: Cut Tape (CT)
Package / Case: 72-LGA Module
Size / Dimension: 0.39" L x 0.35" W x 0.20" H (10.0mm x 9.0mm x 5.0mm)
Mounting Type: Surface Mount
Type: Non-Isolated PoL Module
Operating Temperature: -40°C ~ 125°C
Applications: ITE (Commercial)
Voltage - Input (Max): 16V
Current - Output (Max): 160A
Supplier Device Package: LG-MLGA-72-5
Voltage - Input (Min): 4.25V
Voltage - Output 1: 0.225 ~ 3V
Control Features: Enable, Active High
Power (Watts): 480 W
Number of Outputs: 1
на замовлення 307 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1372.68 грн
5+1272.29 грн
10+1251.75 грн
25+1149.54 грн
50+1130.84 грн
100+1112.44 грн
250+1082.61 грн
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IMDQ65R007M2HXUMA1 Infineon-IMDQ65R007M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934d980ca73a34
IMDQ65R007M2HXUMA1
Виробник: Infineon Technologies
Description: IMDQ65R007M2HXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 937W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
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IMDQ65R007M2HXUMA1 Infineon-IMDQ65R007M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934d980ca73a34
IMDQ65R007M2HXUMA1
Виробник: Infineon Technologies
Description: IMDQ65R007M2HXUMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 196A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 146.3A, 20V
Power Dissipation (Max): 937W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 29.7mA
Supplier Device Package: PG-HDSOP-22-1
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 179 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6359 pF @ 400 V
на замовлення 299 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1912.34 грн
10+1485.90 грн
25+1397.01 грн
100+1219.38 грн
250+1175.69 грн
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AIMCQ120R080M1TXTMA1 AIMCQ120R080M1T_v1.10_en.pdf
AIMCQ120R080M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
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AIMCQ120R080M1TXTMA1 AIMCQ120R080M1T_v1.10_en.pdf
AIMCQ120R080M1TXTMA1
Виробник: Infineon Technologies
Description: SIC_DISCRETE
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 20V
Power Dissipation (Max): 211W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 3.3mA
Supplier Device Package: PG-HDSOP-22
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 671 pF @ 800 V
Qualification: AEC-Q101
на замовлення 620 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+663.59 грн
10+439.61 грн
100+357.83 грн
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S29GL01GS11TFV020 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL01GS11TFV020
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 110 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1096.58 грн
10+979.75 грн
25+949.16 грн
91+850.63 грн
В кошику  од. на суму  грн.
FZ675R65KE4NPSA1 Infineon-FZ675R65KE4-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c93dda25b0194d08c52241d01
FZ675R65KE4NPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 6.5KV 675A 2.4MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -50°C ~ 135°C (TJ)
Vce(on) (Max) @ Vge, Ic: 3.25V @ 15V, 675A
NTC Thermistor: No
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 675 A
Voltage - Collector Emitter Breakdown (Max): 6.5 kV
Power - Max: 2.4 mW
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 163000 pF @ 25 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+101438.84 грн
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IR2102PBF description IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 32555 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
98+206.57 грн
Мінімальне замовлення: 98
В кошику  од. на суму  грн.
IR2102PBF description IRSDS17613-1.pdf?t.download=true&u=5oefqw
IR2102PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
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IRFB7434GPBF IR_PartNumberingSystem.pdf
IRFB7434GPBF
Виробник: Infineon Technologies
Description: MOSFET N CH 40V 195A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 324 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10820 pF @ 25 V
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+9931.55 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CY8C4148AZES595TXUMA1 infineon-automotive-psoc-4100s-plus-datasheet-en-09018a9080860d3f.pdf
CY8C4148AZES595TXUMA1
Виробник: Infineon Technologies
Description: PSOC4 - GENERAL
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x12b SAR, Sigma-Delta
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: CANbus, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 64-TQFP (10x10)
Grade: Automotive
Number of I/O: 54
Qualification: AEC-Q100
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AUIRL1404S AUIRL1404S%2CL.pdf
AUIRL1404S
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
136+145.66 грн
Мінімальне замовлення: 136
В кошику  од. на суму  грн.
AUIRL1404S AUIRL1404S%2CL.pdf
AUIRL1404S
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Qualification: AEC-Q101
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AUIRL1404ZS INFN-S-A0002298850-1.pdf?t.download=true&u=5oefqw
AUIRL1404ZS
Виробник: Infineon Technologies
Description: AUIRL1404ZS - 20V-40V N-CHANNEL
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
156+127.78 грн
Мінімальне замовлення: 156
В кошику  од. на суму  грн.
FS1000R08A7P3BHPSA1 infineon-fs1000r08a7p3b-datasheet-en.pdf
Виробник: Infineon Technologies
Description: IGBT MOD 750V 600A AGHDG2XT-7611
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.21V @ 15V, 600A
NTC Thermistor: No
Supplier Device Package: AG-HDG2XT-7611
Current - Collector (Ic) (Max): 600 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Power - Max: 750 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 60800 pF @ 50 V
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+26417.46 грн
В кошику  од. на суму  грн.
IPT034N15NM6ATMA1 infineon-ipt034n15nm6-datasheet-en.pdf
IPT034N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 179µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
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IPT034N15NM6ATMA1 infineon-ipt034n15nm6-datasheet-en.pdf
IPT034N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 179µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
на замовлення 1508 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+341.99 грн
10+218.90 грн
100+156.05 грн
500+139.10 грн
В кошику  од. на суму  грн.
CYPM1111-40LQXI Infineon-PMG1-S1_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea45a6733a
CYPM1111-40LQXI
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D - 8bit SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 17
DigiKey Programmable: Not Verified
на замовлення 9639 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+224.34 грн
10+162.02 грн
25+148.56 грн
100+125.57 грн
490+115.09 грн
980+111.80 грн
1470+108.34 грн
2940+105.96 грн
5390+104.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CYPM1111-40LQXIT Infineon-PMG1-S1_Datasheet_Power_Delivery_Microcontroller_Gen1-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea45a6733a
CYPM1111-40LQXIT
Виробник: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 12K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 17
DigiKey Programmable: Not Verified
товару немає в наявності
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IPF011N08NM6ATMA1 infineon-ipf011n08nm6-datasheet-en.pdf
IPF011N08NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 271A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 279µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
на замовлення 988 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+520.83 грн
10+340.13 грн
100+259.77 грн
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RMBABYCRYSOFT1
RMBABYCRYSOFT1
Виробник: Infineon Technologies
Description: SOFTWARE
Packaging: Electronic Delivery
товару немає в наявності
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IGLT65R055B2AUMA1 infineon-iglt65r055b2-pds-datasheet-en.pdf
IGLT65R055B2AUMA1
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 21.8A 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 9A
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V
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IGLT65R055B2AUMA1 infineon-iglt65r055b2-pds-datasheet-en.pdf
IGLT65R055B2AUMA1
Виробник: Infineon Technologies
Description: GANFET N-CH 650V 21.8A 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.8A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 9A
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 3mA
Supplier Device Package: PG-HDSOP-16-9
Vgs (Max): -10V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 3 V
Input Capacitance (Ciss) (Max) @ Vds: 346 pF @ 400 V
на замовлення 1456 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+749.09 грн
10+499.51 грн
100+419.80 грн
В кошику  од. на суму  грн.
IRS9103AXTSA1 Infineon-IRS9103A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c92416ca50192b01494a37cc3
IRS9103AXTSA1
Виробник: Infineon Technologies
Description: IRS9103AXTSA1
Packaging: Tape & Reel (TR)
Package / Case: 9-WFBGA, WLBGA
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.6V
Supplier Device Package: PG-WFWLB-9-21
Grade: Automotive
Number of Channels: 1
Current - Supply: 4 mA
Qualification: AEC-Q100
товару немає в наявності
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IRS9103AXTSA1 Infineon-IRS9103A-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c92416ca50192b01494a37cc3
IRS9103AXTSA1
Виробник: Infineon Technologies
Description: IRS9103AXTSA1
Packaging: Cut Tape (CT)
Package / Case: 9-WFBGA, WLBGA
Mounting Type: Surface Mount
Type: Laser Diode Driver
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.6V
Supplier Device Package: PG-WFWLB-9-21
Grade: Automotive
Number of Channels: 1
Current - Supply: 4 mA
Qualification: AEC-Q100
на замовлення 700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+362.39 грн
10+266.33 грн
25+245.73 грн
100+209.33 грн
250+199.19 грн
500+193.09 грн
В кошику  од. на суму  грн.
BCP51H6327XTSA1 Infineon-BCP51_BCP52_BCP53-DS-v01_01-en.pdf?fileId=db3a304314dca38901156ad4194521c9
BCP51H6327XTSA1
Виробник: Infineon Technologies
Description: TRANS PNP 45V 1A PG-SOT223-4
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 125MHz
Supplier Device Package: PG-SOT223-4
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 2 W
на замовлення 105000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1771+11.42 грн
Мінімальне замовлення: 1771
В кошику  од. на суму  грн.
PVA3054NPBF pva30n.pdf?fileId=5546d462533600a4015356839c762923
PVA3054NPBF
Виробник: Infineon Technologies
Description: SSR RELAY SPST-NO 50MA 0-300V
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Through Hole
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: PC Pin
Load Current: 50 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-DIP Modified
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
на замовлення 759 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+485.54 грн
10+416.72 грн
25+397.97 грн
50+360.68 грн
100+348.30 грн
250+332.58 грн
500+315.89 грн
В кошику  од. на суму  грн.
IMT44R025M2HXTMA2 infineon-imt44r025m2h-datasheet-en.pdf
IMT44R025M2HXTMA2
Виробник: Infineon Technologies
Description: SICFET N-CH 440V 68A PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 440 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
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IMT44R025M2HXTMA2 infineon-imt44r025m2h-datasheet-en.pdf
IMT44R025M2HXTMA2
Виробник: Infineon Technologies
Description: SICFET N-CH 440V 68A PG-HSOF-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HSOF-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +25V, -10V
Drain to Source Voltage (Vdss): 440 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 200 V
товару немає в наявності
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IRLR3802PBF IRSDS11016-1.pdf?t.download=true&u=5oefqw
IRLR3802PBF
Виробник: Infineon Technologies
Description: IRLR3802 - 12V-300V N-CHANNEL PO
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 6 V
на замовлення 2596 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
429+47.25 грн
Мінімальне замовлення: 429
В кошику  од. на суму  грн.
EVALTDA3880618VOUTTOBO1 Infineon-Evalaution_board_TDA38806_P1V8_user_guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190e3b887585f05
EVALTDA3880618VOUTTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TDA38806
Packaging: Box
Voltage - Output: 1.8V
Voltage - Input: 12V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38806
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3981.56 грн
В кошику  од. на суму  грн.
EVALTDA388065VOUTTOBO1 Infineon-Evaluation_board_EVAL_TDA38807_5Vout-UserManual-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0191231e79c90cfe
EVALTDA388065VOUTTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TDA38806
Packaging: Box
Voltage - Output: 5V
Voltage - Input: 12V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38806
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3981.56 грн
В кошику  од. на суму  грн.
EVALTDA3880633VOUTTOBO1 Infineon-TDA38806-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190ba4e6fe45b05
EVALTDA3880633VOUTTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TDA38806
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 12V
Current - Output: 6A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38806
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3981.56 грн
В кошику  од. на суму  грн.
IR21084PBF ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
IR21084PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
99+205.22 грн
Мінімальне замовлення: 99
В кошику  од. на суму  грн.
IR21084PBF ir2108.pdf?fileId=5546d462533600a4015355c7dc321676
IR21084PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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CY7C1168V18-375BZC
CY7C1168V18-375BZC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 375 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7C1168V18-400BZC
CY7C1168V18-400BZC
Виробник: Infineon Technologies
Description: IC SRAM 18MBIT PARALLEL 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 18Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, DDR II
Clock Frequency: 400 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 1M x 18
DigiKey Programmable: Not Verified
товару немає в наявності
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TC357TA64F300SABKXUMA2 4_cip10528.pdf
TC357TA64F300SABKXUMA2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 1.44M x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: TriCore™
Data Converters: A/D 16x12b SAR, Sigma-Delta
Core Size: 32-Bit 5-Core
Voltage - Supply (Vcc/Vdd): 2.97V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, LVDS, PWM, WDT
Supplier Device Package: PG-LFBGA-292-13
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2601.82 грн
10+2040.77 грн
25+1924.69 грн
100+1686.53 грн
250+1629.46 грн
В кошику  од. на суму  грн.
CY8CLED08-48LFXI CY8CLED08.pdf
CY8CLED08-48LFXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: HB LED Controller
Core Processor: M8C
Supplier Device Package: 48-QFN (7x7)
Number of I/O: 44
DigiKey Programmable: Not Verified
на замовлення 1033 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+964.01 грн
10+732.60 грн
25+683.76 грн
100+591.29 грн
260+566.36 грн
520+552.04 грн
В кошику  од. на суму  грн.
IRS21864PBF irs2186pbf.pdf?fileId=5546d462533600a40153567716c427ed
IRS21864PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 22ns, 18ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 4A, 4A
DigiKey Programmable: Not Verified
на замовлення 813 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+268.26 грн
10+195.18 грн
25+179.44 грн
100+152.11 грн
250+144.34 грн
500+139.66 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
EVALISO4DIR1400HTOBO1 Infineon-Digital_Isolators_EVAL_ISO_4DIR1400H-UserManual-v01_00-EN.pdf
EVALISO4DIR1400HTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 4DIR1400H
Packaging: Bulk
Function: Digital Isolator
Type: Interface
Contents: Board(s)
Utilized IC / Part: 4DIR1400H
Primary Attributes: 4-Channel (Quad)
Embedded: No
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3642.71 грн
В кошику  од. на суму  грн.
CYW89570BFFBGTXUMA1
Виробник: Infineon Technologies
Description: WIRELESS AUTOMOTIVE
Packaging: Tape & Reel (TR)
товару немає в наявності
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IR2117PBF ir2117.pdf?fileId=5546d462533600a4015355c84331168d
IR2117PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HIGH-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 40ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
на замовлення 1420 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+222.77 грн
10+160.96 грн
50+139.62 грн
100+124.82 грн
250+118.27 грн
500+114.32 грн
1000+109.24 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
EVALTDA38740A33VOUTTOBO1 infineon-evaluation-board-eval-tda38740a-xxvout-usermanual-en.pdf
Виробник: Infineon Technologies
Description: EVALTDA38740A33VOUTTOBO1
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 17V
Current - Output: 40A
Contents: Board(s)
Regulator Topology: Buck
Utilized IC / Part: TDA38740A
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Isolated Output
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4945.58 грн
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S29GL256S11TFV020 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL256S11TFV020
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 16M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CY62167EV30LL-45BVIT Infineon-CY62167EV30_MoBL_16-Mbit_(1M_x_16_2M_x_8)_Static_RAM-DataSheet-v18_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe4ea831c9&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY62167EV30LL-45BVIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 2M x 8, 1M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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