Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119458) > Сторінка 777 з 1991

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IRFZ46ZSTRLPBF IRFZ46ZSTRLPBF Infineon Technologies infineon-irfz46z-datasheet-en.pdf Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
на замовлення 3616 шт:
термін постачання 21-31 дні (днів)
242+83.49 грн
Мінімальне замовлення: 242
В кошику  од. на суму  грн.
BFR843EL3E6327XTSA1 BFR843EL3E6327XTSA1 Infineon Technologies Infineon-BFR843EL3-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389715764ed1 Description: RF TRANS NPN 2.6V PG TSLP-3-10
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 25.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
Supplier Device Package: PG-TSLP-3-10
на замовлення 30004 шт:
термін постачання 21-31 дні (днів)
6+52.42 грн
10+36.01 грн
25+32.39 грн
100+26.65 грн
250+24.87 грн
500+23.79 грн
1000+23.17 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BAT2402ELSE6327XTSA1 BAT2402ELSE6327XTSA1 Infineon Technologies INFN-S-A0009651208-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 4V 100MW TSSLP23
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Vr, F: 0.2pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-3
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
на замовлення 18713 шт:
термін постачання 21-31 дні (днів)
380+52.17 грн
Мінімальне замовлення: 380
В кошику  од. на суму  грн.
IQE031N08LM6CGATMA1 IQE031N08LM6CGATMA1 Infineon Technologies infineon-iqe031n08lm6cg-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
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IQE031N08LM6CGATMA1 IQE031N08LM6CGATMA1 Infineon Technologies infineon-iqe031n08lm6cg-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
2+167.42 грн
10+119.71 грн
25+109.39 грн
100+92.02 грн
250+86.95 грн
500+83.89 грн
1000+80.04 грн
2500+77.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISC031N08NM6ATMA1 ISC031N08NM6ATMA1 Infineon Technologies Infineon-ISC031N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f9ba3f52e44 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
товару немає в наявності
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ISC031N08NM6ATMA1 ISC031N08NM6ATMA1 Infineon Technologies Infineon-ISC031N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f9ba3f52e44 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
на замовлення 358 шт:
термін постачання 21-31 дні (днів)
2+205.75 грн
10+128.37 грн
100+88.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IQE031N08LM6CGSCATMA1 IQE031N08LM6CGSCATMA1 Infineon Technologies infineon-iqe031n08lm6cg-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
товару немає в наявності
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IQE031N08LM6CGSCATMA1 IQE031N08LM6CGSCATMA1 Infineon Technologies infineon-iqe031n08lm6cg-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
на замовлення 5515 шт:
термін постачання 21-31 дні (днів)
2+223.75 грн
10+162.05 грн
25+148.65 грн
100+125.69 грн
250+119.10 грн
500+115.12 грн
1000+110.02 грн
2500+106.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISC031N08NM6SCATMA1 ISC031N08NM6SCATMA1 Infineon Technologies Infineon-ISC031N08NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e2b7d7f04 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
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IMT65R010M2HXUMA1 IMT65R010M2HXUMA1 Infineon Technologies Infineon-IMT65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dea4c033b1e Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 681W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
товару немає в наявності
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IMT65R010M2HXUMA1 IMT65R010M2HXUMA1 Infineon Technologies Infineon-IMT65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dea4c033b1e Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 681W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
1+1425.41 грн
10+983.06 грн
В кошику  од. на суму  грн.
CYWB0226ABSX-FDXIT CYWB0226ABSX-FDXIT Infineon Technologies download Description: IC WEST BRIDGE HS-USB 81-WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 81-UFBGA, WLCSP
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 81-WLCSP (3.8x3.8)
DigiKey Programmable: Not Verified
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IAUC120N06S5N015ATMA1 IAUC120N06S5N015ATMA1 Infineon Technologies Infineon-IAUC120N06S5N015-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fde5da2e2785f Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
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IAUC120N06S5N022ATMA1 IAUC120N06S5N022ATMA1 Infineon Technologies Infineon-IAUC120N06S5N022-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c83cd308101840981c1f446d3 Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 30 V
Qualification: AEC-Q101
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IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 Infineon Technologies Infineon-IAUC120N06S5L015-datasheet-10-Infineon-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275dfda0ef4 Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8193 pF @ 30 V
Qualification: AEC-Q101
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ISC056N08NM6ATMA1 ISC056N08NM6ATMA1 Infineon Technologies Infineon-ISC056N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3fadf9362ec0 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
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ISC056N08NM6ATMA1 ISC056N08NM6ATMA1 Infineon Technologies Infineon-ISC056N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3fadf9362ec0 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
на замовлення 4985 шт:
термін постачання 21-31 дні (днів)
2+162.73 грн
10+100.50 грн
100+68.40 грн
500+51.28 грн
1000+47.14 грн
2000+46.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUZN04S7L025ATMA1 IAUZN04S7L025ATMA1 Infineon Technologies infineon-iauzn04s7l025-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tj)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 20µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 20 V
Qualification: AEC-Q101
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IAUZN04S7L025ATMA1 IAUZN04S7L025ATMA1 Infineon Technologies infineon-iauzn04s7l025-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tj)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 20µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 20 V
Qualification: AEC-Q101
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
4+89.19 грн
10+54.17 грн
100+35.84 грн
500+26.26 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IAUZN04S7L012ATMA1 IAUZN04S7L012ATMA1 Infineon Technologies infineon-iauzn04s7l012-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 199A (Tj)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 35µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3686 pF @ 20 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IAUZN04S7L012ATMA1 IAUZN04S7L012ATMA1 Infineon Technologies infineon-iauzn04s7l012-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 199A (Tj)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 35µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3686 pF @ 20 V
Qualification: AEC-Q101
на замовлення 686 шт:
термін постачання 21-31 дні (днів)
3+115.79 грн
10+70.66 грн
100+47.38 грн
500+35.10 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IMLT40R036M2HXTMA1 IMLT40R036M2HXTMA1 Infineon Technologies infineon-imt40r036m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c5568a4d54 Description: IMLT40R036M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 200 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1+467.84 грн
10+304.73 грн
100+221.87 грн
500+175.10 грн
1800+174.37 грн
В кошику  од. на суму  грн.
IMLT40R025M2HXTMA1 IMLT40R025M2HXTMA1 Infineon Technologies infineon-imt40r025m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51 Description: IMLT40R025M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
IMLT40R025M2HXTMA1 IMLT40R025M2HXTMA1 Infineon Technologies infineon-imt40r025m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51 Description: IMLT40R025M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+260.87 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
IMLT40R015M2HXTMA1 IMLT40R015M2HXTMA1 Infineon Technologies infineon-imt40r015m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933 Description: IMLT40R015M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
IMLT40R015M2HXTMA1 IMLT40R015M2HXTMA1 Infineon Technologies infineon-imt40r015m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933 Description: IMLT40R015M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 200 V
на замовлення 1778 шт:
термін постачання 21-31 дні (днів)
1+837.88 грн
10+560.05 грн
100+446.42 грн
В кошику  од. на суму  грн.
IMLT40R011M2HXTMA1 IMLT40R011M2HXTMA1 Infineon Technologies infineon-imlt40r011m2h-datasheet-en.pdf Description: IMLT40R011M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HDSOP-16-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 200 V
товару немає в наявності
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SHIELDBTS70081EPZTOBO1 SHIELDBTS70081EPZTOBO1 Infineon Technologies infineon-profet-2-12v-grade0-productbrief-en.pdf Description: SHIELD_BTS7008-1EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-1EPZ
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+6688.95 грн
В кошику  од. на суму  грн.
IR4426PBF IR4426PBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
SHIELD_XENSIV_A SHIELD_XENSIV_A Infineon Technologies Infineon-SHIELD_XENSIV_A_UG-UserManual-v02_00-EN.pdf?fileId=8ac78c8c93956f5001939dcf496b4bc4 Description: SHIELD_XENSIV_A
Packaging: Box
Function: Carbon Dioxide (CO2), Humidity, Pressure, Radar, Temperature
Type: Sensor
Contents: Board(s)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+4616.55 грн
В кошику  од. на суму  грн.
EVAL2EP130RVDTOBO1 EVAL2EP130RVDTOBO1 Infineon Technologies UG-2024-01_EVAL-2EP130R-VD_v1.00_2024-02-26_en.pdf Description: EVAL BOARD FOR 2EP130R
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EP130R
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+5959.81 грн
В кошику  од. на суму  грн.
EVAL2EP130RPRTOBO1 EVAL2EP130RPRTOBO1 Infineon Technologies UG-2024-02_EVAL-2EP130R-PR_v1.00_2024-02-26_en.pdf Description: EVAL BOARD FOR 2EP130R
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EP130R
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+6405.74 грн
В кошику  од. на суму  грн.
SHIELDXENSIVA SHIELDXENSIVA Infineon Technologies infineon-xensiv-sensor-shield-product-brief-productbrief-en.pdf Description: IOT-PSOC6
Packaging: Box
Function: Carbon Dioxide (CO2), Humidity, Pressure, Radar, Temperature
Type: Sensor
Contents: Board(s)
товару немає в наявності
В кошику  од. на суму  грн.
DG48VSWITCHKITTOBO1 DG48VSWITCHKITTOBO1 Infineon Technologies Infineon-Dual_Gate_48V_switch_board_quick_introduction-Presentations-v02_20-EN.pdf?fileId=8ac78c8c8d1b852e018d2029a416004e Description: EVAL BOARD FOR IAUTN08S5N012L
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IAUTN08S5N012L
Embedded: No
товару немає в наявності
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ISC040N10NM7ATMA1 ISC040N10NM7ATMA1 Infineon Technologies infineon-isc040n10nm7-datasheet-en.pdf Description: ISC040N10NM7ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 66µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
товару немає в наявності
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ISC040N10NM7ATMA1 ISC040N10NM7ATMA1 Infineon Technologies infineon-isc040n10nm7-datasheet-en.pdf Description: ISC040N10NM7ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 66µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
товару немає в наявності
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ISC018N08NM6SCATMA1 ISC018N08NM6SCATMA1 Infineon Technologies Infineon-ISC018N08NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e1d697f01 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 40 V
на замовлення 3750 шт:
термін постачання 21-31 дні (днів)
2+281.64 грн
10+205.82 грн
25+189.39 грн
100+160.76 грн
250+152.66 грн
500+147.78 грн
1000+141.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISC009N06NM6SCATMA1 ISC009N06NM6SCATMA1 Infineon Technologies Infineon-ISC009N06NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e39af7f07 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 344A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 221W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 118µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 30 V
товару немає в наявності
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ISC016N08NM8SCATMA1 ISC016N08NM8SCATMA1 Infineon Technologies ISC016N08NM8SCATMA1 Description: ISC016N08NM8SCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-WSON-8-2
товару немає в наявності
В кошику  од. на суму  грн.
ISC016N08NM8SCATMA1 ISC016N08NM8SCATMA1 Infineon Technologies ISC016N08NM8SCATMA1 Description: ISC016N08NM8SCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-WSON-8-2
товару немає в наявності
В кошику  од. на суму  грн.
ISC165N15NM6ATMA1 ISC165N15NM6ATMA1 Infineon Technologies DS_ISC165N15NM6_en.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 16A, 15V
Power Dissipation (Max): 3W (Ta), 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-45
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
на замовлення 4034 шт:
термін постачання 21-31 дні (днів)
2+157.25 грн
10+97.03 грн
100+66.15 грн
500+49.69 грн
1000+48.59 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFZ44ZLPBF IRFZ44ZLPBF Infineon Technologies irfz44zpbf.pdf?fileId=5546d462533600a40153563b6a15221c Description: MOSFET N-CH 55V 51A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
на замовлення 979 шт:
термін постачання 21-31 дні (днів)
2+213.58 грн
50+102.02 грн
100+91.99 грн
500+69.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRF1404ZS AUIRF1404ZS Infineon Technologies auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376 Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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AUIRF1404ZSTRL AUIRF1404ZSTRL Infineon Technologies auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376 Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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FF650R17IE4PBOSA1 Infineon Technologies Infineon-FF650R17IE4P-DS-v03_00-EN.pdf?fileId=5546d46253e9fadc0153efeab1493c89 Description: IGBT MODULE 1700V 650A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
1+35355.19 грн
В кошику  од. на суму  грн.
FF6MR12KM1HHPSA1 FF6MR12KM1HHPSA1 Infineon Technologies Infineon-FF6MR12KM1H-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a31aa537a2 Description: MOSFET
Packaging: Tray
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+12853.73 грн
10+11537.82 грн
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IPA70R450P7SXKSA1 IPA70R450P7SXKSA1 Infineon Technologies infineon-ipa70r450p7s-datasheet-en.pdf Description: MOSFET N-CH 700V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
на замовлення 31924 шт:
термін постачання 21-31 дні (днів)
396+50.19 грн
Мінімальне замовлення: 396
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IPU95R450P7AKMA1 IPU95R450P7AKMA1 Infineon Technologies infineon-ipu95r450p7-datasheet-en.pdf Description: MOSFET N-CH 950V 14A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
на замовлення 1339 шт:
термін постачання 21-31 дні (днів)
2+210.45 грн
75+94.61 грн
150+85.65 грн
525+68.41 грн
1050+63.23 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRS21084PBF IRS21084PBF Infineon Technologies IRSDS08085-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 10900 шт:
термін постачання 21-31 дні (днів)
105+188.86 грн
Мінімальне замовлення: 105
В кошику  од. на суму  грн.
IRS21084PBF IRS21084PBF Infineon Technologies IRSDS08085-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS2101PBF IRS2101PBF Infineon Technologies infineon-irs2101-datasheet-en.pdf description Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS2109PBF IRS2109PBF Infineon Technologies IRSDS11365-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS21094PBF IRS21094PBF Infineon Technologies IRSDS11365-1.pdf?t.download=true&u=5oefqw description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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AIKYX200N75CP2ALSA1 AIKYX200N75CP2ALSA1 Infineon Technologies Infineon-AIKYX200N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c90530b3a0190939f601541b9 Description: AIKYX200N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A
Supplier Device Package: PG-TO247-4-13
Td (on/off) @ 25°C: 79ns/268ns
Switching Energy: 7.6mJ (on), 6.4mJ (off)
Test Condition: 470V, 200A, 5Ohm, 15V
Gate Charge: 1.27 µC
Grade: Automotive
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 938 W
Qualification: AEC-Q101
на замовлення 378 шт:
термін постачання 21-31 дні (днів)
1+1179.76 грн
30+701.68 грн
120+606.68 грн
В кошику  од. на суму  грн.
AIKYX160N75CP2ALSA1 AIKYX160N75CP2ALSA1 Infineon Technologies Infineon-AIKYX160N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c90530b3a019091d6ff7f6760 Description: AIKYX160N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 160A
Supplier Device Package: PG-TO247-4-13
Td (on/off) @ 25°C: 64ns/234ns
Switching Energy: 5.5mJ (on), 4.9mJ (off)
Test Condition: 470V, 160A, 5Ohm, 15V
Gate Charge: 975 nC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 750 W
Qualification: AEC-Q101
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
1+925.50 грн
30+543.00 грн
В кошику  од. на суму  грн.
ISZ023N06LM6ATMA1 ISZ023N06LM6ATMA1 Infineon Technologies infineon-isz023n06lm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 149A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
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ISZ025N06NM6ATMA1 ISZ025N06NM6ATMA1 Infineon Technologies infineon-isz025n06nm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
4+100.14 грн
10+70.66 грн
25+64.19 грн
100+53.48 грн
250+50.27 грн
500+48.33 грн
1000+45.97 грн
2500+44.31 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ISC025N06LM6ATMA1 ISC025N06LM6ATMA1 Infineon Technologies Infineon-ISC025N06LM6-DataSheet-v01_00-EN.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
на замовлення 974 шт:
термін постачання 21-31 дні (днів)
3+121.26 грн
10+85.51 грн
25+77.87 грн
100+65.11 грн
250+61.31 грн
500+59.02 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IAUC100N08S5N034ATMA1 IAUC100N08S5N034ATMA1 Infineon Technologies Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tj)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 78µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4559 pF @ 40 V
Qualification: AEC-Q101
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IRFZ46ZSTRLPBF infineon-irfz46z-datasheet-en.pdf
IRFZ46ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
на замовлення 3616 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
242+83.49 грн
Мінімальне замовлення: 242
В кошику  од. на суму  грн.
BFR843EL3E6327XTSA1 Infineon-BFR843EL3-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389715764ed1
BFR843EL3E6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 2.6V PG TSLP-3-10
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 25.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
Supplier Device Package: PG-TSLP-3-10
на замовлення 30004 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+52.42 грн
10+36.01 грн
25+32.39 грн
100+26.65 грн
250+24.87 грн
500+23.79 грн
1000+23.17 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BAT2402ELSE6327XTSA1 INFN-S-A0009651208-1.pdf?t.download=true&u=5oefqw
BAT2402ELSE6327XTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW TSSLP23
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Vr, F: 0.2pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-3
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
на замовлення 18713 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
380+52.17 грн
Мінімальне замовлення: 380
В кошику  од. на суму  грн.
IQE031N08LM6CGATMA1 infineon-iqe031n08lm6cg-datasheet-en.pdf
IQE031N08LM6CGATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
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IQE031N08LM6CGATMA1 infineon-iqe031n08lm6cg-datasheet-en.pdf
IQE031N08LM6CGATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+167.42 грн
10+119.71 грн
25+109.39 грн
100+92.02 грн
250+86.95 грн
500+83.89 грн
1000+80.04 грн
2500+77.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISC031N08NM6ATMA1 Infineon-ISC031N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f9ba3f52e44
ISC031N08NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
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ISC031N08NM6ATMA1 Infineon-ISC031N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f9ba3f52e44
ISC031N08NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
на замовлення 358 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+205.75 грн
10+128.37 грн
100+88.51 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IQE031N08LM6CGSCATMA1 infineon-iqe031n08lm6cg-datasheet-en.pdf
IQE031N08LM6CGSCATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
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IQE031N08LM6CGSCATMA1 infineon-iqe031n08lm6cg-datasheet-en.pdf
IQE031N08LM6CGSCATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
на замовлення 5515 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+223.75 грн
10+162.05 грн
25+148.65 грн
100+125.69 грн
250+119.10 грн
500+115.12 грн
1000+110.02 грн
2500+106.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISC031N08NM6SCATMA1 Infineon-ISC031N08NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e2b7d7f04
ISC031N08NM6SCATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
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IMT65R010M2HXUMA1 Infineon-IMT65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dea4c033b1e
IMT65R010M2HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 681W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
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IMT65R010M2HXUMA1 Infineon-IMT65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dea4c033b1e
IMT65R010M2HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 681W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1425.41 грн
10+983.06 грн
В кошику  од. на суму  грн.
CYWB0226ABSX-FDXIT download
CYWB0226ABSX-FDXIT
Виробник: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 81-WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 81-UFBGA, WLCSP
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 81-WLCSP (3.8x3.8)
DigiKey Programmable: Not Verified
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IAUC120N06S5N015ATMA1 Infineon-IAUC120N06S5N015-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fde5da2e2785f
IAUC120N06S5N015ATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
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IAUC120N06S5N022ATMA1 Infineon-IAUC120N06S5N022-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c83cd308101840981c1f446d3
IAUC120N06S5N022ATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 30 V
Qualification: AEC-Q101
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IAUC120N06S5L015ATMA1 Infineon-IAUC120N06S5L015-datasheet-10-Infineon-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275dfda0ef4
IAUC120N06S5L015ATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8193 pF @ 30 V
Qualification: AEC-Q101
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ISC056N08NM6ATMA1 Infineon-ISC056N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3fadf9362ec0
ISC056N08NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
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ISC056N08NM6ATMA1 Infineon-ISC056N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3fadf9362ec0
ISC056N08NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
на замовлення 4985 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+162.73 грн
10+100.50 грн
100+68.40 грн
500+51.28 грн
1000+47.14 грн
2000+46.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUZN04S7L025ATMA1 infineon-iauzn04s7l025-datasheet-en.pdf
IAUZN04S7L025ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tj)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 20µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 20 V
Qualification: AEC-Q101
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IAUZN04S7L025ATMA1 infineon-iauzn04s7l025-datasheet-en.pdf
IAUZN04S7L025ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tj)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 20µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 20 V
Qualification: AEC-Q101
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+89.19 грн
10+54.17 грн
100+35.84 грн
500+26.26 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IAUZN04S7L012ATMA1 infineon-iauzn04s7l012-datasheet-en.pdf
IAUZN04S7L012ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 199A (Tj)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 35µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3686 pF @ 20 V
Qualification: AEC-Q101
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IAUZN04S7L012ATMA1 infineon-iauzn04s7l012-datasheet-en.pdf
IAUZN04S7L012ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 199A (Tj)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 35µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3686 pF @ 20 V
Qualification: AEC-Q101
на замовлення 686 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+115.79 грн
10+70.66 грн
100+47.38 грн
500+35.10 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IMLT40R036M2HXTMA1 infineon-imt40r036m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c5568a4d54
IMLT40R036M2HXTMA1
Виробник: Infineon Technologies
Description: IMLT40R036M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 200 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+467.84 грн
10+304.73 грн
100+221.87 грн
500+175.10 грн
1800+174.37 грн
В кошику  од. на суму  грн.
IMLT40R025M2HXTMA1 infineon-imt40r025m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51
IMLT40R025M2HXTMA1
Виробник: Infineon Technologies
Description: IMLT40R025M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
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IMLT40R025M2HXTMA1 infineon-imt40r025m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51
IMLT40R025M2HXTMA1
Виробник: Infineon Technologies
Description: IMLT40R025M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+260.87 грн
Мінімальне замовлення: 1800
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IMLT40R015M2HXTMA1 infineon-imt40r015m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933
IMLT40R015M2HXTMA1
Виробник: Infineon Technologies
Description: IMLT40R015M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 200 V
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IMLT40R015M2HXTMA1 infineon-imt40r015m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84b72f374933
IMLT40R015M2HXTMA1
Виробник: Infineon Technologies
Description: IMLT40R015M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 27.1A, 18V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 9.7mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 200 V
на замовлення 1778 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+837.88 грн
10+560.05 грн
100+446.42 грн
В кошику  од. на суму  грн.
IMLT40R011M2HXTMA1 infineon-imlt40r011m2h-datasheet-en.pdf
IMLT40R011M2HXTMA1
Виробник: Infineon Technologies
Description: IMLT40R011M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 37.1A, 18V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
Supplier Device Package: PG-HDSOP-16-8
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 200 V
товару немає в наявності
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SHIELDBTS70081EPZTOBO1 infineon-profet-2-12v-grade0-productbrief-en.pdf
SHIELDBTS70081EPZTOBO1
Виробник: Infineon Technologies
Description: SHIELD_BTS7008-1EPZ
Packaging: Box
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS7008-1EPZ
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6688.95 грн
В кошику  од. на суму  грн.
IR4426PBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4426PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
товару немає в наявності
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SHIELD_XENSIV_A Infineon-SHIELD_XENSIV_A_UG-UserManual-v02_00-EN.pdf?fileId=8ac78c8c93956f5001939dcf496b4bc4
SHIELD_XENSIV_A
Виробник: Infineon Technologies
Description: SHIELD_XENSIV_A
Packaging: Box
Function: Carbon Dioxide (CO2), Humidity, Pressure, Radar, Temperature
Type: Sensor
Contents: Board(s)
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4616.55 грн
В кошику  од. на суму  грн.
EVAL2EP130RVDTOBO1 UG-2024-01_EVAL-2EP130R-VD_v1.00_2024-02-26_en.pdf
EVAL2EP130RVDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 2EP130R
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EP130R
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5959.81 грн
В кошику  од. на суму  грн.
EVAL2EP130RPRTOBO1 UG-2024-02_EVAL-2EP130R-PR_v1.00_2024-02-26_en.pdf
EVAL2EP130RPRTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR 2EP130R
Packaging: Box
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: 2EP130R
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6405.74 грн
В кошику  од. на суму  грн.
SHIELDXENSIVA infineon-xensiv-sensor-shield-product-brief-productbrief-en.pdf
SHIELDXENSIVA
Виробник: Infineon Technologies
Description: IOT-PSOC6
Packaging: Box
Function: Carbon Dioxide (CO2), Humidity, Pressure, Radar, Temperature
Type: Sensor
Contents: Board(s)
товару немає в наявності
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DG48VSWITCHKITTOBO1 Infineon-Dual_Gate_48V_switch_board_quick_introduction-Presentations-v02_20-EN.pdf?fileId=8ac78c8c8d1b852e018d2029a416004e
DG48VSWITCHKITTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR IAUTN08S5N012L
Packaging: Bulk
Function: MOSFET
Type: Power Management
Contents: Board(s)
Utilized IC / Part: IAUTN08S5N012L
Embedded: No
товару немає в наявності
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ISC040N10NM7ATMA1 infineon-isc040n10nm7-datasheet-en.pdf
ISC040N10NM7ATMA1
Виробник: Infineon Technologies
Description: ISC040N10NM7ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 66µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
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ISC040N10NM7ATMA1 infineon-isc040n10nm7-datasheet-en.pdf
ISC040N10NM7ATMA1
Виробник: Infineon Technologies
Description: ISC040N10NM7ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 66µA
Supplier Device Package: PG-TDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
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ISC018N08NM6SCATMA1 Infineon-ISC018N08NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e1d697f01
ISC018N08NM6SCATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 230A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 217W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 114µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 40 V
на замовлення 3750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+281.64 грн
10+205.82 грн
25+189.39 грн
100+160.76 грн
250+152.66 грн
500+147.78 грн
1000+141.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISC009N06NM6SCATMA1 Infineon-ISC009N06NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e39af7f07
ISC009N06NM6SCATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 344A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 221W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 118µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8300 pF @ 30 V
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ISC016N08NM8SCATMA1 ISC016N08NM8SCATMA1
ISC016N08NM8SCATMA1
Виробник: Infineon Technologies
Description: ISC016N08NM8SCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-WSON-8-2
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ISC016N08NM8SCATMA1 ISC016N08NM8SCATMA1
ISC016N08NM8SCATMA1
Виробник: Infineon Technologies
Description: ISC016N08NM8SCATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Supplier Device Package: PG-WSON-8-2
товару немає в наявності
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ISC165N15NM6ATMA1 DS_ISC165N15NM6_en.pdf
ISC165N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 16A, 15V
Power Dissipation (Max): 3W (Ta), 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 35µA
Supplier Device Package: PG-TDSON-8-45
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 75 V
на замовлення 4034 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+157.25 грн
10+97.03 грн
100+66.15 грн
500+49.69 грн
1000+48.59 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRFZ44ZLPBF irfz44zpbf.pdf?fileId=5546d462533600a40153563b6a15221c
IRFZ44ZLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 25 V
на замовлення 979 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+213.58 грн
50+102.02 грн
100+91.99 грн
500+69.83 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
AUIRF1404ZS auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376
AUIRF1404ZS
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404ZSTRL auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376
AUIRF1404ZSTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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FF650R17IE4PBOSA1 Infineon-FF650R17IE4P-DS-v03_00-EN.pdf?fileId=5546d46253e9fadc0153efeab1493c89
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 650A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 650 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 54000 pF @ 25 V
на замовлення 105 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+35355.19 грн
В кошику  од. на суму  грн.
FF6MR12KM1HHPSA1 Infineon-FF6MR12KM1H-DataSheet-v00_10-EN.pdf?fileId=8ac78c8c8afe5bd0018b18a31aa537a2
FF6MR12KM1HHPSA1
Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tray
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+12853.73 грн
10+11537.82 грн
В кошику  од. на суму  грн.
IPA70R450P7SXKSA1 infineon-ipa70r450p7s-datasheet-en.pdf
IPA70R450P7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 700V 10A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.7W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 424 pF @ 400 V
на замовлення 31924 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
396+50.19 грн
Мінімальне замовлення: 396
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IPU95R450P7AKMA1 infineon-ipu95r450p7-datasheet-en.pdf
IPU95R450P7AKMA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 950V 14A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 360µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 950 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 400 V
на замовлення 1339 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+210.45 грн
75+94.61 грн
150+85.65 грн
525+68.41 грн
1050+63.23 грн
Мінімальне замовлення: 2
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IRS21084PBF description IRSDS08085-1.pdf?t.download=true&u=5oefqw
IRS21084PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 10900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
105+188.86 грн
Мінімальне замовлення: 105
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IRS21084PBF description IRSDS08085-1.pdf?t.download=true&u=5oefqw
IRS21084PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS2101PBF description infineon-irs2101-datasheet-en.pdf
IRS2101PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS2109PBF IRSDS11365-1.pdf?t.download=true&u=5oefqw
IRS2109PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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IRS21094PBF description IRSDS11365-1.pdf?t.download=true&u=5oefqw
IRS21094PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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AIKYX200N75CP2ALSA1 Infineon-AIKYX200N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c90530b3a0190939f601541b9
AIKYX200N75CP2ALSA1
Виробник: Infineon Technologies
Description: AIKYX200N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 200A
Supplier Device Package: PG-TO247-4-13
Td (on/off) @ 25°C: 79ns/268ns
Switching Energy: 7.6mJ (on), 6.4mJ (off)
Test Condition: 470V, 200A, 5Ohm, 15V
Gate Charge: 1.27 µC
Grade: Automotive
Current - Collector (Ic) (Max): 250 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 938 W
Qualification: AEC-Q101
на замовлення 378 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1179.76 грн
30+701.68 грн
120+606.68 грн
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AIKYX160N75CP2ALSA1 Infineon-AIKYX160N75CP2-DataSheet-v01_10-EN.pdf?fileId=8ac78c8c90530b3a019091d6ff7f6760
AIKYX160N75CP2ALSA1
Виробник: Infineon Technologies
Description: AIKYX160N75CP2ALSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.55V @ 15V, 160A
Supplier Device Package: PG-TO247-4-13
Td (on/off) @ 25°C: 64ns/234ns
Switching Energy: 5.5mJ (on), 4.9mJ (off)
Test Condition: 470V, 160A, 5Ohm, 15V
Gate Charge: 975 nC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 480 A
Power - Max: 750 W
Qualification: AEC-Q101
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+925.50 грн
30+543.00 грн
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ISZ023N06LM6ATMA1 infineon-isz023n06lm6-datasheet-en.pdf
ISZ023N06LM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 149A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
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ISZ025N06NM6ATMA1 infineon-isz025n06nm6-datasheet-en.pdf
ISZ025N06NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 38µA
Supplier Device Package: PG-TSDSON-8-34
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 30 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+100.14 грн
10+70.66 грн
25+64.19 грн
100+53.48 грн
250+50.27 грн
500+48.33 грн
1000+45.97 грн
2500+44.31 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
ISC025N06LM6ATMA1 Infineon-ISC025N06LM6-DataSheet-v01_00-EN.pdf
ISC025N06LM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 143A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 38µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 30 V
на замовлення 974 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+121.26 грн
10+85.51 грн
25+77.87 грн
100+65.11 грн
250+61.31 грн
500+59.02 грн
Мінімальне замовлення: 3
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IAUC100N08S5N034ATMA1 Infineon-IAUC100N08S5N034-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd41bf1020e
IAUC100N08S5N034ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 132A (Tj)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 78µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4559 pF @ 40 V
Qualification: AEC-Q101
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