Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117841) > Сторінка 777 з 1965

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CY8CLED01D01-56LTXI CY8CLED01D01-56LTXI Infineon Technologies CY8CLED0x%28D%2CG%290x.pdf Description: IC MCU 8BIT 16KB FLASH 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 14
DigiKey Programmable: Not Verified
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CY8CLED03G01-56LTXI CY8CLED03G01-56LTXI Infineon Technologies CY8CLED0x%28D%2CG%290x.pdf Description: IC MCU 8BIT 16KB FLASH 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 14
DigiKey Programmable: Not Verified
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CY8CLED04G01-56LTXI CY8CLED04G01-56LTXI Infineon Technologies CY8CLED0x%28D%2CG%290x.pdf Description: IC MCU 8BIT 16KB FLASH 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 14
DigiKey Programmable: Not Verified
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CY8C4248LQI-BL553T CY8C4248LQI-BL553T Infineon Technologies 4200_BLE_Family_2-22-18.pdf Description: IC MCU 32BIT 256KB FLASH 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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IPL65R165CFDAUMA2 IPL65R165CFDAUMA2 Infineon Technologies Infineon-IPL65R165CFD-DS-v02_01-EN.pdf?fileId=db3a304344d727a80144dee127e60baf Description: MOSFET N-CH 650V 21.3A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.3A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.3A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
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FF1400R17IP4B60BOSA1 Infineon Technologies infineon-ff1400r17ip4-datasheet-en.pdf?fileId=db3a30432a14dd54012a32defcf70297 Description: IGBT MODULE 1700V 1400A 9550W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1.4kA
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 9550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110000 pF @ 25 V
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CY7C1565KV18-500BZXC CY7C1565KV18-500BZXC Infineon Technologies Infineon-CY7C1565KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe0b293135&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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6EDL04I065NRXUMA1 6EDL04I065NRXUMA1 Infineon Technologies 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04I065NRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
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6EDL04I065NRXUMA1 6EDL04I065NRXUMA1 Infineon Technologies 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04I065NRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 2989 шт:
термін постачання 21-31 дні (днів)
2+174.13 грн
5+149.10 грн
10+142.31 грн
25+125.95 грн
50+120.77 грн
100+116.02 грн
500+104.71 грн
1000+101.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
6EDL04I065PRXUMA1 6EDL04I065PRXUMA1 Infineon Technologies 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04I065PRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
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6EDL04I065PRXUMA1 6EDL04I065PRXUMA1 Infineon Technologies 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04I065PRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
2+174.13 грн
5+149.10 грн
10+142.31 грн
25+125.95 грн
50+120.77 грн
100+116.02 грн
500+104.71 грн
1000+101.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
6EDL04I06NCX1SA1 6EDL04I06NCX1SA1 Infineon Technologies Infineon-6EDXXXX06XXX-DS-v02_05-EN.pdf?fileId=db3a30433ecb86d4013ed135270c1242 Description: IC GATE DRVR HALF-BRIDGE CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: Chip
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
DigiKey Programmable: Not Verified
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В кошику  од. на суму  грн.
6EDL04I06PCX1SA1 6EDL04I06PCX1SA1 Infineon Technologies Infineon-6EDXXXX06XXX-DS-v02_05-EN.pdf?fileId=db3a30433ecb86d4013ed135270c1242 Description: IC GATE DRVR HALF-BRIDGE CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: Chip
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
DigiKey Programmable: Not Verified
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6EDL04N06PCX1SA1 6EDL04N06PCX1SA1 Infineon Technologies Infineon-6EDXXXX06XXX-DS-v02_05-EN.pdf?fileId=db3a30433ecb86d4013ed135270c1242 Description: IC GATE DRVR HALF-BRIDGE CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: Chip
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
DigiKey Programmable: Not Verified
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CYT2B97CACQ0AZSGS CYT2B97CACQ0AZSGS Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
на замовлення 590 шт:
термін постачання 21-31 дні (днів)
1+919.30 грн
10+698.01 грн
60+616.60 грн
120+557.98 грн
300+536.15 грн
540+524.83 грн
В кошику  од. на суму  грн.
CYT2B97CACQ0AZEGS CYT2B97CACQ0AZEGS Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
1+935.78 грн
10+711.08 грн
60+628.38 грн
120+568.70 грн
300+546.52 грн
540+535.03 грн
В кошику  од. на суму  грн.
CYT2BL7CAAQ0AZSGST CYT2BL7CAAQ0AZSGST Infineon Technologies infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf Description: IC MCU 32BIT 4.16MB FLSH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.16MB (4.16M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 54x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
на замовлення 570 шт:
термін постачання 21-31 дні (днів)
1+1186.78 грн
10+908.52 грн
25+850.09 грн
100+737.49 грн
В кошику  од. на суму  грн.
CYT3BB7CEBQ1AEEGS CYT3BB7CEBQ1AEEGS Infineon Technologies Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v09_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732 Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
на замовлення 595 шт:
термін постачання 21-31 дні (днів)
1+1498.97 грн
10+1156.50 грн
60+1031.62 грн
120+936.42 грн
300+902.94 грн
540+885.59 грн
В кошику  од. на суму  грн.
CYT4BB7CEBQ1AEEGS CYT4BB7CEBQ1AEEGS Infineon Technologies Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v09_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732 Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
на замовлення 594 шт:
термін постачання 21-31 дні (днів)
1+1612.71 грн
10+1247.37 грн
60+1114.20 грн
120+1011.83 грн
300+976.15 грн
540+957.65 грн
В кошику  од. на суму  грн.
IAUCN08S7L013ATMA1 IAUCN08S7L013ATMA1 Infineon Technologies Infineon-IAUCN08S7L013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e01978442d4b24458 Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 293A (Tj)
Rds On (Max) @ Id, Vgs: 1.26mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 2V @ 131µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9554 pF @ 40 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IAUCN08S7L013ATMA1 IAUCN08S7L013ATMA1 Infineon Technologies Infineon-IAUCN08S7L013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e01978442d4b24458 Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 293A (Tj)
Rds On (Max) @ Id, Vgs: 1.26mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 2V @ 131µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9554 pF @ 40 V
Qualification: AEC-Q101
на замовлення 2354 шт:
термін постачання 21-31 дні (днів)
2+282.38 грн
10+179.32 грн
100+126.57 грн
500+108.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUCN04S7N010GATMA1 IAUCN04S7N010GATMA1 Infineon Technologies infineon-iaucn04s7n010g-datasheet-en.pdf Description: IAUCN04S7N010GATMA1
Packaging: Tray
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 88A, 10V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 3V @ 50µA
Supplier Device Package: PG-THSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5026 pF @ 20 V
Qualification: AEC-Q101
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
2+174.92 грн
10+108.69 грн
100+74.59 грн
500+56.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUCN08S7N019TATMA1 IAUCN08S7N019TATMA1 Infineon Technologies Infineon-IAUCN08S7N019T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c96250806019642831bb47bcc Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.94mOhm @ 88A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 93.4µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6061 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+89.05 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUCN08S7N019TATMA1 IAUCN08S7N019TATMA1 Infineon Technologies Infineon-IAUCN08S7N019T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c96250806019642831bb47bcc Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.94mOhm @ 88A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 93.4µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6061 pF @ 40 V
Qualification: AEC-Q101
на замовлення 5779 шт:
термін постачання 21-31 дні (днів)
2+263.55 грн
10+166.63 грн
100+117.06 грн
500+98.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUCN08S7N016TATMA1 IAUCN08S7N016TATMA1 Infineon Technologies Infineon-IAUCN08S7N016T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d785ac52e80 Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 88A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-LHDSO-10-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7394 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+109.31 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUCN08S7N016TATMA1 IAUCN08S7N016TATMA1 Infineon Technologies Infineon-IAUCN08S7N016T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d785ac52e80 Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 88A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-LHDSO-10-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7394 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4918 шт:
термін постачання 21-31 дні (днів)
2+306.70 грн
10+195.25 грн
100+138.48 грн
500+120.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SGD04N60BUMA1 SGD04N60BUMA1 Infineon Technologies SGx04N60.pdf Description: IGBT NPT 600V 9.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Supplier Device Package: PG-TO252-3-11
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/237ns
Switching Energy: 131µJ
Test Condition: 400V, 4A, 67Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9.4 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 19 A
Power - Max: 50 W
товару немає в наявності
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KP405XTMA1 KP405XTMA1 Infineon Technologies Infineon-KP405-TPD-v01_00-EN.pdf Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.61PSI ~ 40.61PSI (38.7kPa ~ 280kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)
3400+215.59 грн
Мінімальне замовлення: 3400
В кошику  од. на суму  грн.
KP405XTMA1 KP405XTMA1 Infineon Technologies Infineon-KP405-TPD-v01_00-EN.pdf Description: INTEGRATED PRESSURE SENS
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.61PSI ~ 40.61PSI (38.7kPa ~ 280kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)
1+385.92 грн
10+284.84 грн
25+263.13 грн
100+224.47 грн
250+213.77 грн
500+207.32 грн
1000+198.71 грн
В кошику  од. на суму  грн.
BTS282ZE3180AATMA2 BTS282ZE3180AATMA2 Infineon Technologies BTS282Z_DS_13.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043405f2978014071d29660203c&ack=t Description: MOSFET N-CH 49V 80A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO263-7-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
S25FS064SAGMFI010 S25FS064SAGMFI010 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
на замовлення 2262 шт:
термін постачання 21-31 дні (днів)
2+163.94 грн
10+147.74 грн
25+143.54 грн
50+131.68 грн
100+128.64 грн
280+124.13 грн
560+119.12 грн
1120+116.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S25FS064SAGMFI011 S25FS064SAGMFI011 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S25FS064SDSMFI010 S25FS064SDSMFI010 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
2+181.19 грн
10+163.00 грн
25+158.38 грн
50+145.27 грн
100+141.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRG4BC30KPBF IRG4BC30KPBF Infineon Technologies fundamentals-of-power-semiconductors description Description: IGBT 600V 28A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 360µJ (on), 510µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
товару немає в наявності
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IRFZ46ZSTRLPBF IRFZ46ZSTRLPBF Infineon Technologies infineon-irfz46z-datasheet-en.pdf Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
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IRFZ46ZSTRLPBF IRFZ46ZSTRLPBF Infineon Technologies infineon-irfz46z-datasheet-en.pdf Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
на замовлення 3616 шт:
термін постачання 21-31 дні (днів)
242+83.71 грн
Мінімальне замовлення: 242
В кошику  од. на суму  грн.
BFR843EL3E6327XTSA1 BFR843EL3E6327XTSA1 Infineon Technologies Infineon-BFR843EL3-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389715764ed1 Description: RF TRANS NPN 2.6V PG TSLP-3-10
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 25.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
Supplier Device Package: PG-TSLP-3-10
на замовлення 30004 шт:
термін постачання 21-31 дні (днів)
6+52.55 грн
10+36.11 грн
25+32.48 грн
100+26.72 грн
250+24.93 грн
500+23.85 грн
1000+23.23 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BAT2402ELSE6327XTSA1 BAT2402ELSE6327XTSA1 Infineon Technologies INFN-S-A0009651208-1.pdf?t.download=true&u=5oefqw Description: DIODE SCHOTTKY 4V 100MW TSSLP23
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Vr, F: 0.2pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-3
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
на замовлення 18713 шт:
термін постачання 21-31 дні (днів)
380+52.31 грн
Мінімальне замовлення: 380
В кошику  од. на суму  грн.
IQE031N08LM6CGATMA1 IQE031N08LM6CGATMA1 Infineon Technologies infineon-iqe031n08lm6cg-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
товару немає в наявності
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IQE031N08LM6CGATMA1 IQE031N08LM6CGATMA1 Infineon Technologies infineon-iqe031n08lm6cg-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
2+167.86 грн
10+120.02 грн
25+109.68 грн
100+92.26 грн
250+87.18 грн
500+84.11 грн
1000+80.25 грн
2500+77.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISC031N08NM6ATMA1 ISC031N08NM6ATMA1 Infineon Technologies Infineon-ISC031N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f9ba3f52e44 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+57.73 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ISC031N08NM6ATMA1 ISC031N08NM6ATMA1 Infineon Technologies Infineon-ISC031N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f9ba3f52e44 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2+191.39 грн
10+119.49 грн
100+82.38 грн
500+63.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IQE031N08LM6CGSCATMA1 IQE031N08LM6CGSCATMA1 Infineon Technologies infineon-iqe031n08lm6cg-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
IQE031N08LM6CGSCATMA1 IQE031N08LM6CGSCATMA1 Infineon Technologies infineon-iqe031n08lm6cg-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
на замовлення 5515 шт:
термін постачання 21-31 дні (днів)
2+224.34 грн
10+162.47 грн
25+149.04 грн
100+126.02 грн
250+119.41 грн
500+115.43 грн
1000+110.31 грн
2500+106.91 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISC031N08NM6SCATMA1 ISC031N08NM6SCATMA1 Infineon Technologies Infineon-ISC031N08NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e2b7d7f04 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
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IMT65R010M2HXUMA1 IMT65R010M2HXUMA1 Infineon Technologies Infineon-IMT65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dea4c033b1e Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 681W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
IMT65R010M2HXUMA1 IMT65R010M2HXUMA1 Infineon Technologies Infineon-IMT65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dea4c033b1e Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 681W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
на замовлення 267 шт:
термін постачання 21-31 дні (днів)
1+1329.54 грн
10+917.13 грн
100+886.32 грн
В кошику  од. на суму  грн.
CYWB0226ABSX-FDXIT CYWB0226ABSX-FDXIT Infineon Technologies download Description: IC WEST BRIDGE HS-USB 81-WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 81-UFBGA, WLCSP
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 81-WLCSP (3.8x3.8)
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
IAUC120N06S5N015ATMA1 IAUC120N06S5N015ATMA1 Infineon Technologies Infineon-IAUC120N06S5N015-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fde5da2e2785f Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
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IAUC120N06S5N022ATMA1 IAUC120N06S5N022ATMA1 Infineon Technologies Infineon-IAUC120N06S5N022-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c83cd308101840981c1f446d3 Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 30 V
Qualification: AEC-Q101
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IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 Infineon Technologies Infineon-IAUC120N06S5L015-datasheet-10-Infineon-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275dfda0ef4 Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8193 pF @ 30 V
Qualification: AEC-Q101
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ISC056N08NM6ATMA1 ISC056N08NM6ATMA1 Infineon Technologies Infineon-ISC056N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3fadf9362ec0 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
товару немає в наявності
В кошику  од. на суму  грн.
ISC056N08NM6ATMA1 ISC056N08NM6ATMA1 Infineon Technologies Infineon-ISC056N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3fadf9362ec0 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
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IAUZN04S7L025ATMA1 IAUZN04S7L025ATMA1 Infineon Technologies infineon-iauzn04s7l025-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tj)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 20µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 20 V
Qualification: AEC-Q101
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IAUZN04S7L025ATMA1 IAUZN04S7L025ATMA1 Infineon Technologies infineon-iauzn04s7l025-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tj)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 20µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 20 V
Qualification: AEC-Q101
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
4+89.42 грн
10+54.31 грн
100+35.94 грн
500+26.33 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IAUZN04S7L012ATMA1 IAUZN04S7L012ATMA1 Infineon Technologies infineon-iauzn04s7l012-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 199A (Tj)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 35µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3686 pF @ 20 V
Qualification: AEC-Q101
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IAUZN04S7L012ATMA1 IAUZN04S7L012ATMA1 Infineon Technologies infineon-iauzn04s7l012-datasheet-en.pdf Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 199A (Tj)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 35µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3686 pF @ 20 V
Qualification: AEC-Q101
на замовлення 686 шт:
термін постачання 21-31 дні (днів)
3+116.09 грн
10+70.85 грн
100+47.50 грн
500+35.20 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IMLT40R036M2HXTMA1 IMLT40R036M2HXTMA1 Infineon Technologies infineon-imt40r036m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c5568a4d54 Description: IMLT40R036M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 200 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1+469.07 грн
10+305.53 грн
100+222.45 грн
500+175.56 грн
1800+174.83 грн
В кошику  од. на суму  грн.
IMLT40R025M2HXTMA1 IMLT40R025M2HXTMA1 Infineon Technologies infineon-imt40r025m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51 Description: IMLT40R025M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
товару немає в наявності
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IMLT40R025M2HXTMA1 IMLT40R025M2HXTMA1 Infineon Technologies infineon-imt40r025m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51 Description: IMLT40R025M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+261.56 грн
Мінімальне замовлення: 1800
В кошику  од. на суму  грн.
CY8CLED01D01-56LTXI CY8CLED0x%28D%2CG%290x.pdf
CY8CLED01D01-56LTXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 14
DigiKey Programmable: Not Verified
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CY8CLED03G01-56LTXI CY8CLED0x%28D%2CG%290x.pdf
CY8CLED03G01-56LTXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 14
DigiKey Programmable: Not Verified
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CY8CLED04G01-56LTXI CY8CLED0x%28D%2CG%290x.pdf
CY8CLED04G01-56LTXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 14
DigiKey Programmable: Not Verified
товару немає в наявності
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CY8C4248LQI-BL553T 4200_BLE_Family_2-22-18.pdf
CY8C4248LQI-BL553T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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IPL65R165CFDAUMA2 Infineon-IPL65R165CFD-DS-v02_01-EN.pdf?fileId=db3a304344d727a80144dee127e60baf
IPL65R165CFDAUMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 21.3A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.3A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.3A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
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FF1400R17IP4B60BOSA1 infineon-ff1400r17ip4-datasheet-en.pdf?fileId=db3a30432a14dd54012a32defcf70297
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1400A 9550W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1.4kA
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 9550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110000 pF @ 25 V
товару немає в наявності
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CY7C1565KV18-500BZXC Infineon-CY7C1565KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe0b293135&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1565KV18-500BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
6EDL04I065NRXUMA1 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04I065NRXUMA1
Виробник: Infineon Technologies
Description: 6EDL04I065NRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
товару немає в наявності
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6EDL04I065NRXUMA1 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04I065NRXUMA1
Виробник: Infineon Technologies
Description: 6EDL04I065NRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 2989 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+174.13 грн
5+149.10 грн
10+142.31 грн
25+125.95 грн
50+120.77 грн
100+116.02 грн
500+104.71 грн
1000+101.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
6EDL04I065PRXUMA1 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04I065PRXUMA1
Виробник: Infineon Technologies
Description: 6EDL04I065PRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
товару немає в наявності
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6EDL04I065PRXUMA1 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04I065PRXUMA1
Виробник: Infineon Technologies
Description: 6EDL04I065PRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+174.13 грн
5+149.10 грн
10+142.31 грн
25+125.95 грн
50+120.77 грн
100+116.02 грн
500+104.71 грн
1000+101.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
6EDL04I06NCX1SA1 Infineon-6EDXXXX06XXX-DS-v02_05-EN.pdf?fileId=db3a30433ecb86d4013ed135270c1242
6EDL04I06NCX1SA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: Chip
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
6EDL04I06PCX1SA1 Infineon-6EDXXXX06XXX-DS-v02_05-EN.pdf?fileId=db3a30433ecb86d4013ed135270c1242
6EDL04I06PCX1SA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: Chip
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
6EDL04N06PCX1SA1 Infineon-6EDXXXX06XXX-DS-v02_05-EN.pdf?fileId=db3a30433ecb86d4013ed135270c1242
6EDL04N06PCX1SA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: Chip
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
DigiKey Programmable: Not Verified
товару немає в наявності
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CYT2B97CACQ0AZSGS Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
CYT2B97CACQ0AZSGS
Виробник: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
на замовлення 590 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+919.30 грн
10+698.01 грн
60+616.60 грн
120+557.98 грн
300+536.15 грн
540+524.83 грн
В кошику  од. на суму  грн.
CYT2B97CACQ0AZEGS Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
CYT2B97CACQ0AZEGS
Виробник: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+935.78 грн
10+711.08 грн
60+628.38 грн
120+568.70 грн
300+546.52 грн
540+535.03 грн
В кошику  од. на суму  грн.
CYT2BL7CAAQ0AZSGST infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf
CYT2BL7CAAQ0AZSGST
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4.16MB FLSH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.16MB (4.16M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 54x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
на замовлення 570 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1186.78 грн
10+908.52 грн
25+850.09 грн
100+737.49 грн
В кошику  од. на суму  грн.
CYT3BB7CEBQ1AEEGS Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v09_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732
CYT3BB7CEBQ1AEEGS
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
на замовлення 595 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1498.97 грн
10+1156.50 грн
60+1031.62 грн
120+936.42 грн
300+902.94 грн
540+885.59 грн
В кошику  од. на суму  грн.
CYT4BB7CEBQ1AEEGS Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v09_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732
CYT4BB7CEBQ1AEEGS
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
на замовлення 594 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1612.71 грн
10+1247.37 грн
60+1114.20 грн
120+1011.83 грн
300+976.15 грн
540+957.65 грн
В кошику  од. на суму  грн.
IAUCN08S7L013ATMA1 Infineon-IAUCN08S7L013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e01978442d4b24458
IAUCN08S7L013ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 293A (Tj)
Rds On (Max) @ Id, Vgs: 1.26mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 2V @ 131µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9554 pF @ 40 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IAUCN08S7L013ATMA1 Infineon-IAUCN08S7L013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e01978442d4b24458
IAUCN08S7L013ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 293A (Tj)
Rds On (Max) @ Id, Vgs: 1.26mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 2V @ 131µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9554 pF @ 40 V
Qualification: AEC-Q101
на замовлення 2354 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+282.38 грн
10+179.32 грн
100+126.57 грн
500+108.37 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUCN04S7N010GATMA1 infineon-iaucn04s7n010g-datasheet-en.pdf
IAUCN04S7N010GATMA1
Виробник: Infineon Technologies
Description: IAUCN04S7N010GATMA1
Packaging: Tray
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 88A, 10V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 3V @ 50µA
Supplier Device Package: PG-THSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5026 pF @ 20 V
Qualification: AEC-Q101
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+174.92 грн
10+108.69 грн
100+74.59 грн
500+56.30 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUCN08S7N019TATMA1 Infineon-IAUCN08S7N019T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c96250806019642831bb47bcc
IAUCN08S7N019TATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.94mOhm @ 88A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 93.4µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6061 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+89.05 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUCN08S7N019TATMA1 Infineon-IAUCN08S7N019T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c96250806019642831bb47bcc
IAUCN08S7N019TATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.94mOhm @ 88A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 93.4µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6061 pF @ 40 V
Qualification: AEC-Q101
на замовлення 5779 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+263.55 грн
10+166.63 грн
100+117.06 грн
500+98.50 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUCN08S7N016TATMA1 Infineon-IAUCN08S7N016T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d785ac52e80
IAUCN08S7N016TATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 88A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-LHDSO-10-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7394 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+109.31 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUCN08S7N016TATMA1 Infineon-IAUCN08S7N016T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d785ac52e80
IAUCN08S7N016TATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 88A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-LHDSO-10-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7394 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4918 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+306.70 грн
10+195.25 грн
100+138.48 грн
500+120.92 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SGD04N60BUMA1 SGx04N60.pdf
SGD04N60BUMA1
Виробник: Infineon Technologies
Description: IGBT NPT 600V 9.4A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Supplier Device Package: PG-TO252-3-11
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/237ns
Switching Energy: 131µJ
Test Condition: 400V, 4A, 67Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9.4 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 19 A
Power - Max: 50 W
товару немає в наявності
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KP405XTMA1 Infineon-KP405-TPD-v01_00-EN.pdf
KP405XTMA1
Виробник: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.61PSI ~ 40.61PSI (38.7kPa ~ 280kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3400+215.59 грн
Мінімальне замовлення: 3400
В кошику  од. на суму  грн.
KP405XTMA1 Infineon-KP405-TPD-v01_00-EN.pdf
KP405XTMA1
Виробник: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.61PSI ~ 40.61PSI (38.7kPa ~ 280kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+385.92 грн
10+284.84 грн
25+263.13 грн
100+224.47 грн
250+213.77 грн
500+207.32 грн
1000+198.71 грн
В кошику  од. на суму  грн.
BTS282ZE3180AATMA2 BTS282Z_DS_13.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043405f2978014071d29660203c&ack=t
BTS282ZE3180AATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 49V 80A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO263-7-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
S25FS064SAGMFI010 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SAGMFI010
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
на замовлення 2262 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+163.94 грн
10+147.74 грн
25+143.54 грн
50+131.68 грн
100+128.64 грн
280+124.13 грн
560+119.12 грн
1120+116.18 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S25FS064SAGMFI011 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SAGMFI011
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
S25FS064SDSMFI010 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SDSMFI010
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+181.19 грн
10+163.00 грн
25+158.38 грн
50+145.27 грн
100+141.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRG4BC30KPBF description fundamentals-of-power-semiconductors
IRG4BC30KPBF
Виробник: Infineon Technologies
Description: IGBT 600V 28A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 360µJ (on), 510µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
товару немає в наявності
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IRFZ46ZSTRLPBF infineon-irfz46z-datasheet-en.pdf
IRFZ46ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
товару немає в наявності
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IRFZ46ZSTRLPBF infineon-irfz46z-datasheet-en.pdf
IRFZ46ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
на замовлення 3616 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
242+83.71 грн
Мінімальне замовлення: 242
В кошику  од. на суму  грн.
BFR843EL3E6327XTSA1 Infineon-BFR843EL3-DS-v02_00-EN.pdf?fileId=5546d46265f064ff0166389715764ed1
BFR843EL3E6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 2.6V PG TSLP-3-10
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 25.5dB
Power - Max: 125mW
Current - Collector (Ic) (Max): 55mA
Voltage - Collector Emitter Breakdown (Max): 2.6V
Supplier Device Package: PG-TSLP-3-10
на замовлення 30004 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+52.55 грн
10+36.11 грн
25+32.48 грн
100+26.72 грн
250+24.93 грн
500+23.85 грн
1000+23.23 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
BAT2402ELSE6327XTSA1 INFN-S-A0009651208-1.pdf?t.download=true&u=5oefqw
BAT2402ELSE6327XTSA1
Виробник: Infineon Technologies
Description: DIODE SCHOTTKY 4V 100MW TSSLP23
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: -55°C ~ 150°C (TA)
Capacitance @ Vr, F: 0.2pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 4V
Supplier Device Package: PG-TSSLP-2-3
Current - Max: 110 mA
Power Dissipation (Max): 100 mW
на замовлення 18713 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
380+52.31 грн
Мінімальне замовлення: 380
В кошику  од. на суму  грн.
IQE031N08LM6CGATMA1 infineon-iqe031n08lm6cg-datasheet-en.pdf
IQE031N08LM6CGATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
товару немає в наявності
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IQE031N08LM6CGATMA1 infineon-iqe031n08lm6cg-datasheet-en.pdf
IQE031N08LM6CGATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-TTFN-9-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
на замовлення 4980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+167.86 грн
10+120.02 грн
25+109.68 грн
100+92.26 грн
250+87.18 грн
500+84.11 грн
1000+80.25 грн
2500+77.63 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISC031N08NM6ATMA1 Infineon-ISC031N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f9ba3f52e44
ISC031N08NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+57.73 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
ISC031N08NM6ATMA1 Infineon-ISC031N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3f9ba3f52e44
ISC031N08NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+191.39 грн
10+119.49 грн
100+82.38 грн
500+63.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IQE031N08LM6CGSCATMA1 infineon-iqe031n08lm6cg-datasheet-en.pdf
IQE031N08LM6CGSCATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
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IQE031N08LM6CGSCATMA1 infineon-iqe031n08lm6cg-datasheet-en.pdf
IQE031N08LM6CGSCATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs: 3.15mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50.8µA
Supplier Device Package: PG-WHTFN-9
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 40 V
на замовлення 5515 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+224.34 грн
10+162.47 грн
25+149.04 грн
100+126.02 грн
250+119.41 грн
500+115.43 грн
1000+110.31 грн
2500+106.91 грн
Мінімальне замовлення: 2
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ISC031N08NM6SCATMA1 Infineon-ISC031N08NM6SC-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c962508060196a72e2b7d7f04
ISC031N08NM6SCATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 145A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 65µA
Supplier Device Package: PG-WSON-8-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 40 V
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IMT65R010M2HXUMA1 Infineon-IMT65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dea4c033b1e
IMT65R010M2HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 681W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
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IMT65R010M2HXUMA1 Infineon-IMT65R010M2H-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c92bcf0b001934dea4c033b1e
IMT65R010M2HXUMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 168A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 92.1A, 20V
Power Dissipation (Max): 681W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 18.7mA
Supplier Device Package: PG-HSOF-8-2
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 113 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4001 pF @ 400 V
на замовлення 267 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1329.54 грн
10+917.13 грн
100+886.32 грн
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CYWB0226ABSX-FDXIT download
CYWB0226ABSX-FDXIT
Виробник: Infineon Technologies
Description: IC WEST BRIDGE HS-USB 81-WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 81-UFBGA, WLCSP
Function: Controller
Interface: Parallel
Voltage - Supply: 1.8V ~ 3.3V
Protocol: USB, Memory Card
Standards: USB 2.0
Supplier Device Package: 81-WLCSP (3.8x3.8)
DigiKey Programmable: Not Verified
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IAUC120N06S5N015ATMA1 Infineon-IAUC120N06S5N015-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8fc2dd9c018fde5da2e2785f
IAUC120N06S5N015ATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6952 pF @ 30 V
Qualification: AEC-Q101
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IAUC120N06S5N022ATMA1 Infineon-IAUC120N06S5N022-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c83cd308101840981c1f446d3
IAUC120N06S5N022ATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tj)
Rds On (Max) @ Id, Vgs: 2.24mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 65µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 30 V
Qualification: AEC-Q101
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IAUC120N06S5L015ATMA1 Infineon-IAUC120N06S5L015-datasheet-10-Infineon-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8386267f0183b275dfda0ef4
IAUC120N06S5L015ATMA1
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 235A (Tj)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 60A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 94µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8193 pF @ 30 V
Qualification: AEC-Q101
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ISC056N08NM6ATMA1 Infineon-ISC056N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3fadf9362ec0
ISC056N08NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
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ISC056N08NM6ATMA1 Infineon-ISC056N08NM6-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8c3de074018c3fadf9362ec0
ISC056N08NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta), 88A (Tc)
Rds On (Max) @ Id, Vgs: 5.6mOhm @ 40A, 10V
Power Dissipation (Max): 3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 36µA
Supplier Device Package: PG-TDSON-8 FL
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 40 V
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IAUZN04S7L025ATMA1 infineon-iauzn04s7l025-datasheet-en.pdf
IAUZN04S7L025ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tj)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 20µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 20 V
Qualification: AEC-Q101
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IAUZN04S7L025ATMA1 infineon-iauzn04s7l025-datasheet-en.pdf
IAUZN04S7L025ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 117A (Tj)
Rds On (Max) @ Id, Vgs: 2.56mOhm @ 30A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 20µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1954 pF @ 20 V
Qualification: AEC-Q101
на замовлення 945 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+89.42 грн
10+54.31 грн
100+35.94 грн
500+26.33 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IAUZN04S7L012ATMA1 infineon-iauzn04s7l012-datasheet-en.pdf
IAUZN04S7L012ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 199A (Tj)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 35µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3686 pF @ 20 V
Qualification: AEC-Q101
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IAUZN04S7L012ATMA1 infineon-iauzn04s7l012-datasheet-en.pdf
IAUZN04S7L012ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 199A (Tj)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 30A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 35µA
Supplier Device Package: PG-TSDSON-8-39
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3686 pF @ 20 V
Qualification: AEC-Q101
на замовлення 686 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+116.09 грн
10+70.85 грн
100+47.50 грн
500+35.20 грн
Мінімальне замовлення: 3
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IMLT40R036M2HXTMA1 infineon-imt40r036m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c5568a4d54
IMLT40R036M2HXTMA1
Виробник: Infineon Technologies
Description: IMLT40R036M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 45.7mOhm @ 11.1A, 18V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 200 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+469.07 грн
10+305.53 грн
100+222.45 грн
500+175.56 грн
1800+174.83 грн
В кошику  од. на суму  грн.
IMLT40R025M2HXTMA1 infineon-imt40r025m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51
IMLT40R025M2HXTMA1
Виробник: Infineon Technologies
Description: IMLT40R025M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
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IMLT40R025M2HXTMA1 infineon-imt40r025m2h-datasheet-en.pdf?fileId=8ac78c8c8eeb092c018f84c54cec4d51
IMLT40R025M2HXTMA1
Виробник: Infineon Technologies
Description: IMLT40R025M2HXTMA1
Packaging: Tube
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
Rds On (Max) @ Id, Vgs: 32.1mOhm @ 15.7A, 18V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.6mA
Supplier Device Package: PG-HDSOP-16-6
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 200 V
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+261.56 грн
Мінімальне замовлення: 1800
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