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IRSM515-044PA IRSM515-044PA Infineon Technologies IRSM505-044_IRSM515-044_Series.pdf Description: IC HALF BRIDGE DRIVER 3A 23SOP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
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F3L400R10N3S7FC1BPSA1 F3L400R10N3S7FC1BPSA1 Infineon Technologies Description: IGBT MODULE 950V 105A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.57V @ 15V, 70A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 13000 pF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
1+14878.28 грн
10+13439.69 грн
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CY2308ZXI-1HT CY2308ZXI-1HT Infineon Technologies Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY9BF167NPMC-G-MNE2 CY9BF167NPMC-G-MNE2 Infineon Technologies Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3 Description: IC MCU 32BIT 800KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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CY9BF167NPMC-GNE2 CY9BF167NPMC-GNE2 Infineon Technologies Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3 Description: IC MCU 32BIT 800KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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CY9BF167RPMC-G-MNE2 CY9BF167RPMC-G-MNE2 Infineon Technologies Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3 Description: IC MCU 32BIT 800KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
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CY9BF167RPMC-GNE2 CY9BF167RPMC-GNE2 Infineon Technologies Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3 Description: IC MCU 32BIT 800KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
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CY9BF167MPMC1-G-JNE2 CY9BF167MPMC1-G-JNE2 Infineon Technologies Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3 Description: IC MCU 32BIT 800KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Number of I/O: 63
DigiKey Programmable: Not Verified
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CY9BF167NPQC-G-JNE2 CY9BF167NPQC-G-JNE2 Infineon Technologies Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3 Description: IC MCU 32BIT 800KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 80
DigiKey Programmable: Not Verified
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CY9BF167RBGL-GK7E1 CY9BF167RBGL-GK7E1 Infineon Technologies Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3 Description: IC MCU 32BIT 800KB FLASH 144FBGA
Packaging: Tray
Package / Case: 144-LFBGA
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-FBGA (7x7)
Number of I/O: 100
DigiKey Programmable: Not Verified
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CY9BF167NBGL-GE1 CY9BF167NBGL-GE1 Infineon Technologies Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3 Description: IC MCU 32BIT 800KB FLASH 112FBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-FBGA (7x7)
Number of I/O: 80
DigiKey Programmable: Not Verified
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XDPE19284C0000XTMA1 XDPE19284C0000XTMA1 Infineon Technologies Infineon-XDPE19284C-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0d7d68f3583 Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 8
Voltage - Input: 12V
Applications: Controller, Intel VR13
Supplier Device Package: PG-VQFN-40-13
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XDPE19284C0000XTMA1 XDPE19284C0000XTMA1 Infineon Technologies Infineon-XDPE19284C-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0d7d68f3583 Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 8
Voltage - Input: 12V
Applications: Controller, Intel VR13
Supplier Device Package: PG-VQFN-40-13
на замовлення 2020 шт:
термін постачання 21-31 дні (днів)
1+360.23 грн
10+264.06 грн
25+243.33 грн
100+207.01 грн
250+196.83 грн
500+190.70 грн
1000+182.61 грн
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S6E2CC9J0AGV2000A S6E2CC9J0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
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F413MXTR12C1M2H11BPSA1 F413MXTR12C1M2H11BPSA1 Infineon Technologies infineon-f4-13mxtr12c1m2-h11-datasheet-en.pdf Description: F413MXTR12C1M2H11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 800V
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 158nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 22mA
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S6E2C49J0AGB1000A S6E2C49J0AGB1000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S6E2C49H0AGV2000A S6E2C49H0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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S6E2C49J0AGV2000A S6E2C49J0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
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IR3536AMTRPBF IR3536AMTRPBF Infineon Technologies pb-ir3536a.pdf?fileId=5546d462533600a40153567fbbc428ca Description: IC REG CTRLR DDR 2OUT 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: 48-QFN (7x7)
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TC299TX128F300NBCKXUMA1 TC299TX128F300NBCKXUMA1 Infineon Technologies Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 263
DigiKey Programmable: Not Verified
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TC299TX128F300NBCKXUMA1 TC299TX128F300NBCKXUMA1 Infineon Technologies Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f Description: IC MCU 32BIT 8MB FLASH 516LFBGA
Packaging: Cut Tape (CT)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 263
DigiKey Programmable: Not Verified
на замовлення 495 шт:
термін постачання 21-31 дні (днів)
1+5149.62 грн
10+4111.03 грн
25+3899.34 грн
100+3441.06 грн
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FF1MR12MM1HB11BPSA1 FF1MR12MM1HB11BPSA1 Infineon Technologies Infineon-FF1MR12MM1H_B11-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193876c20d94206 Description: FF1MR12MM1HB11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 48400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.91mOhm @ 500A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1600nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Supplier Device Package: AG-ECONOD
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
1+37124.60 грн
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IPI65R190C6XKSA1 IPI65R190C6XKSA1 Infineon Technologies Infineon-IPI65R190C6-DS-v02_00-en.pdf?fileId=db3a304330046413013007e55bcb3d6b Description: IPI65R190C6 - 650V-700V COOLMOS
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
на замовлення 1474 шт:
термін постачання 21-31 дні (днів)
139+158.88 грн
Мінімальне замовлення: 139
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CY8C4025LQI-T411 CY8C4025LQI-T411 Infineon Technologies Infineon-PSoC_4000T_MCU_datasheet-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c8a44f57b018a799f5fb53b5d Description: IC MCU 32BIT 32KB FLASH 16UFQFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, Microwire, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 11
на замовлення 866 шт:
термін постачання 21-31 дні (днів)
2+200.13 грн
10+143.67 грн
25+131.47 грн
100+110.73 грн
490+101.16 грн
Мінімальне замовлення: 2
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REF10KW3LBUCKSIC400TOBO1 Infineon Technologies Description: REF10KW3LBUCKSIC400TOBO1
Packaging: Box
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AUIRF3205ZS AUIRF3205ZS Infineon Technologies auirf3205z.pdf?fileId=5546d462533600a4015355ac71f813a1 Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Qualification: AEC-Q101
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IMZC140R038M2HXKSA1 IMZC140R038M2HXKSA1 Infineon Technologies infineon-imzc140r038m2h-datasheet-en.pdf Description: IMZC140R038M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 20.4A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1.4 kV
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
1+812.43 грн
30+467.52 грн
120+398.63 грн
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IPDQ65R018CM8XTMA1 IPDQ65R018CM8XTMA1 Infineon Technologies Infineon-IPDQ65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e767040a98 Description: IPDQ65R018CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
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IPDQ65R018CM8XTMA1 IPDQ65R018CM8XTMA1 Infineon Technologies Infineon-IPDQ65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e767040a98 Description: IPDQ65R018CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
на замовлення 570 шт:
термін постачання 21-31 дні (днів)
1+898.44 грн
10+602.00 грн
100+518.20 грн
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EVALXDP700TOBO1 EVALXDP700TOBO1 Infineon Technologies Infineon-UM012553_evaluation_board_eval_XDP700-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0854929341c Description: EVALXDP700TOBO1
Packaging: Box
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+22747.06 грн
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IRG8P60N120KD-EPBF IRG8P60N120KD-EPBF Infineon Technologies IRG8P60N120KD%28-E%29PbF.pdf Description: IGBT 1200V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 2.8mJ (on), 2.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 345 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 420 W
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IMZC120R040M2HXKSA1 IMZC120R040M2HXKSA1 Infineon Technologies IMZC120R040M2HXKSA1.pdf Description: SICFET N-CH 1200V 48A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 18A, 18V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
1+781.77 грн
30+448.95 грн
120+382.28 грн
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IRL7833PBF IRL7833PBF Infineon Technologies irl7833pbf.pdf?fileId=5546d462533600a4015356600d71257b Description: MOSFET N-CH 30V 150A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 15 V
на замовлення 26000 шт:
термін постачання 21-31 дні (днів)
229+96.35 грн
Мінімальне замовлення: 229
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IRG4BC30KPBF IRG4BC30KPBF Infineon Technologies fundamentals-of-power-semiconductors description Description: IGBT 600V 28A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 360µJ (on), 510µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
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CYW89570DCFFBGT Infineon Technologies Description: IC RF TXRX BLE
Packaging: Tape & Reel (TR)
Frequency: 2.4GHz ~ 5GHz
Type: TxRx Only
Protocol: 802.11ax
RF Family/Standard: Bluetooth
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+889.64 грн
Мінімальне замовлення: 1500
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CYW89570DCFFBGT Infineon Technologies Description: IC RF TXRX BLE
Packaging: Cut Tape (CT)
Frequency: 2.4GHz ~ 5GHz
Type: TxRx Only
Protocol: 802.11ax
RF Family/Standard: Bluetooth
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1+1339.56 грн
10+1123.40 грн
25+1065.65 грн
100+925.77 грн
250+881.31 грн
500+849.95 грн
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IMBG65R040M2HXTMA1 IMBG65R040M2HXTMA1 Infineon Technologies infineon-imbg65r040m2h-datasheet-en.pdf Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
1000+267.08 грн
Мінімальне замовлення: 1000
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IMBG65R040M2HXTMA1 IMBG65R040M2HXTMA1 Infineon Technologies infineon-imbg65r040m2h-datasheet-en.pdf Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
на замовлення 1906 шт:
термін постачання 21-31 дні (днів)
1+614.85 грн
10+403.30 грн
100+314.80 грн
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IKP08N65F5XKSA1 IKP08N65F5XKSA1 Infineon Technologies Infineon-IKP08N65F5-DS-v02_01-EN.pdf?fileId=db3a30433af5291e013af9bac1de5da9 Description: IGBT
Packaging: Bulk
на замовлення 2300 шт:
термін постачання 21-31 дні (днів)
316+68.61 грн
Мінімальне замовлення: 316
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BFP540FESDH6327XTSA1 BFP540FESDH6327XTSA1 Infineon Technologies Infineon-BFP540FESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f038cf33922 Description: RF TRANS NPN 5V 30GHZ 4-TSFP
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
на замовлення 11483 шт:
термін постачання 21-31 дні (днів)
964+22.80 грн
Мінімальне замовлення: 964
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IAUCN04S7L028ATMA1 IAUCN04S7L028ATMA1 Infineon Technologies Infineon-IAUCN04S7L028-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35eccb611a5a Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
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IAUCN04S7L028ATMA1 IAUCN04S7L028ATMA1 Infineon Technologies Infineon-IAUCN04S7L028-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35eccb611a5a Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
на замовлення 562 шт:
термін постачання 21-31 дні (днів)
4+99.64 грн
10+60.36 грн
100+39.93 грн
500+29.25 грн
Мінімальне замовлення: 4
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IAUCN10S7N074ATMA1 IAUCN10S7N074ATMA1 Infineon Technologies Description: IAUCN10S7N074ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 39A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 35µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Qualification: AEC-Q101
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IAUCN10S7N074ATMA1 IAUCN10S7N074ATMA1 Infineon Technologies Description: IAUCN10S7N074ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 39A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 35µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Qualification: AEC-Q101
на замовлення 4201 шт:
термін постачання 21-31 дні (днів)
3+159.25 грн
10+98.08 грн
100+66.54 грн
500+49.77 грн
1000+47.62 грн
Мінімальне замовлення: 3
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CY7S1061GE30-10BVXI CY7S1061GE30-10BVXI Infineon Technologies Infineon-CY7S1061G_CY7S1061GE_16-Mbit_(1_M_words_16_bit)_Static_RAM_with_Deep-Sleep_Feature_and_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec35ea53850&utm_source=cypress&utm_medium=referra Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1059H30-10ZSXIT CY7C1059H30-10ZSXIT Infineon Technologies Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 8
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CY7C1059H30-10ZSXI CY7C1059H30-10ZSXI Infineon Technologies Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 8
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CY7C10612G30-10ZSXIT CY7C10612G30-10ZSXIT Infineon Technologies Infineon-CY7C10612G_CY7C10612GE_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3fea63963&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061G30-10BVJXIT CY7C1061G30-10BVJXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061GN30-10BVJXI CY7C1061GN30-10BVJXI Infineon Technologies Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061GN30-10BVJXIT CY7C1061GN30-10BVJXIT Infineon Technologies Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061GN30-10ZSXIT CY7C1061GN30-10ZSXIT Infineon Technologies CY7C1061GN30.pdf Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1069GN30-10ZSXIT CY7C1069GN30-10ZSXIT Infineon Technologies Infineon-CY7C1069GN_16-Mbit_(2M_x_8)_Static_RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2f21569df&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 54TSOP
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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CY7C1061G30-10BV1XET CY7C1061G30-10BV1XET Infineon Technologies Infineon-CY7C1061G_Automotive_16-Mbit_(1_M_words_x_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed74055586f&utm_source=cypress&utm_medium=referral&utm_campaign=202110 Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061G30-10BVXIT CY7C1061G30-10BVXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1069G30-10BVXIT CY7C1069G30-10BVXIT Infineon Technologies Infineon-CY7C1069G_CY7C1069GE_16-Mbit_(2_M_words_8_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec36baa3861 Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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CY7C1061GE30-10BV1XIT CY7C1061GE30-10BV1XIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061GE30-10BVXIT CY7C1061GE30-10BVXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061GN30-10ZXIT CY7C1061GN30-10ZXIT Infineon Technologies Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1069GE30-10ZSXI CY7C1069GE30-10ZSXI Infineon Technologies Infineon-CY7C1069G_CY7C1069GE_16-Mbit_(2_M_words_8_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec36baa3861 Description: IC SRAM 16MBIT PARALLEL 54TSOP
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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IRSM515-044PA IRSM505-044_IRSM515-044_Series.pdf
IRSM515-044PA
Виробник: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 3A 23SOP
Features: Bootstrap Circuit
Packaging: Tube
Package / Case: 23-PowerSMD Module
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 13.5V ~ 16.5V
Rds On (Typ): 800mOhm
Applications: AC Motors
Current - Output / Channel: 3A
Current - Peak Output: 15A
Technology: UMOS
Voltage - Load: 200V (Max)
Supplier Device Package: 23-SOP
Fault Protection: UVLO
Load Type: Inductive
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F3L400R10N3S7FC1BPSA1
F3L400R10N3S7FC1BPSA1
Виробник: Infineon Technologies
Description: IGBT MODULE 950V 105A 20MW
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.57V @ 15V, 70A
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 105 A
Voltage - Collector Emitter Breakdown (Max): 950 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 25 µA
Input Capacitance (Cies) @ Vce: 13000 pF @ 25 V
на замовлення 20 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+14878.28 грн
10+13439.69 грн
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CY2308ZXI-1HT Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2308ZXI-1HT
Виробник: Infineon Technologies
Description: IC FANOUT BUFFER 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-TSSOP
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
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CY9BF167NPMC-G-MNE2 Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3
CY9BF167NPMC-G-MNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 800KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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CY9BF167NPMC-GNE2 Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3
CY9BF167NPMC-GNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 800KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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CY9BF167RPMC-G-MNE2 Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3
CY9BF167RPMC-G-MNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 800KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
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CY9BF167RPMC-GNE2 Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3
CY9BF167RPMC-GNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 800KB FLASH 120LQFP
Packaging: Tray
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 120-LQFP (16x16)
Number of I/O: 100
DigiKey Programmable: Not Verified
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CY9BF167MPMC1-G-JNE2 Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3
CY9BF167MPMC1-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 800KB FLASH 80LQFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (14x14)
Number of I/O: 63
DigiKey Programmable: Not Verified
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CY9BF167NPQC-G-JNE2 Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3
CY9BF167NPQC-G-JNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 800KB FLASH 100PQFP
Packaging: Tray
Package / Case: 100-BQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-PQFP (14x20)
Number of I/O: 80
DigiKey Programmable: Not Verified
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CY9BF167RBGL-GK7E1 Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3
CY9BF167RBGL-GK7E1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 800KB FLASH 144FBGA
Packaging: Tray
Package / Case: 144-LFBGA
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-FBGA (7x7)
Number of I/O: 100
DigiKey Programmable: Not Verified
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CY9BF167NBGL-GE1 Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3
CY9BF167NBGL-GE1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 800KB FLASH 112FBGA
Packaging: Tray
Package / Case: 112-LFBGA
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 800KB (800K x 8)
RAM Size: 96K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 112-FBGA (7x7)
Number of I/O: 80
DigiKey Programmable: Not Verified
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XDPE19284C0000XTMA1 Infineon-XDPE19284C-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0d7d68f3583
XDPE19284C0000XTMA1
Виробник: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 8
Voltage - Input: 12V
Applications: Controller, Intel VR13
Supplier Device Package: PG-VQFN-40-13
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XDPE19284C0000XTMA1 Infineon-XDPE19284C-0000-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0d7d68f3583
XDPE19284C0000XTMA1
Виробник: Infineon Technologies
Description: IFX PRIMARION CNTRLLER
Packaging: Cut Tape (CT)
Package / Case: 40-VFQFN Exposed Pad
Voltage - Output: 0.25V ~ 3.04V
Mounting Type: Surface Mount
Number of Outputs: 8
Voltage - Input: 12V
Applications: Controller, Intel VR13
Supplier Device Package: PG-VQFN-40-13
на замовлення 2020 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+360.23 грн
10+264.06 грн
25+243.33 грн
100+207.01 грн
250+196.83 грн
500+190.70 грн
1000+182.61 грн
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S6E2CC9J0AGV2000A download
S6E2CC9J0AGV2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, Ethernet, I2C, LINbus, SD, SPI, UART/USART, USB
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
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F413MXTR12C1M2H11BPSA1 infineon-f4-13mxtr12c1m2-h11-datasheet-en.pdf
F413MXTR12C1M2H11BPSA1
Виробник: Infineon Technologies
Description: F413MXTR12C1M2H11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 60A
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 800V
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 50A, 18V
Gate Charge (Qg) (Max) @ Vgs: 158nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 22mA
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S6E2C49J0AGB1000A download
S6E2C49J0AGB1000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 192FBGA
Packaging: Tray
Package / Case: 192-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 192-FBGA (12x12)
Number of I/O: 152
DigiKey Programmable: Not Verified
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S6E2C49H0AGV2000A download
S6E2C49H0AGV2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 120
DigiKey Programmable: Not Verified
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S6E2C49J0AGV2000A download
S6E2C49J0AGV2000A
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 176LQFP
Packaging: Tray
Package / Case: 176-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 32x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 176-LQFP (24x24)
Number of I/O: 152
DigiKey Programmable: Not Verified
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IR3536AMTRPBF pb-ir3536a.pdf?fileId=5546d462533600a40153567fbbc428ca
IR3536AMTRPBF
Виробник: Infineon Technologies
Description: IC REG CTRLR DDR 2OUT 48QFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Number of Outputs: 2
Voltage - Input: 3.3V
Operating Temperature: -20°C ~ 85°C
Applications: Controller, DDR, Intel VR12, AMD SVI, PVI
Supplier Device Package: 48-QFN (7x7)
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TC299TX128F300NBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
TC299TX128F300NBCKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 263
DigiKey Programmable: Not Verified
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TC299TX128F300NBCKXUMA1 Infineon-TC29xBC-DS-v01_00-EN.pdf?fileId=5546d462694c98b4016953a048b3047f
TC299TX128F300NBCKXUMA1
Виробник: Infineon Technologies
Description: IC MCU 32BIT 8MB FLASH 516LFBGA
Packaging: Cut Tape (CT)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 8MB (8M x 8)
RAM Size: 728K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 384K x 8
Core Processor: TriCore™
Data Converters: A/D 84x12b, 10 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3.3V, 5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 263
DigiKey Programmable: Not Verified
на замовлення 495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+5149.62 грн
10+4111.03 грн
25+3899.34 грн
100+3441.06 грн
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FF1MR12MM1HB11BPSA1 Infineon-FF1MR12MM1H_B11-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c92bcf0b00193876c20d94206
FF1MR12MM1HB11BPSA1
Виробник: Infineon Technologies
Description: FF1MR12MM1HB11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 48400pF @ 800V
Rds On (Max) @ Id, Vgs: 1.91mOhm @ 500A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1600nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 224mA
Supplier Device Package: AG-ECONOD
на замовлення 40 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+37124.60 грн
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IPI65R190C6XKSA1 Infineon-IPI65R190C6-DS-v02_00-en.pdf?fileId=db3a304330046413013007e55bcb3d6b
IPI65R190C6XKSA1
Виробник: Infineon Technologies
Description: IPI65R190C6 - 650V-700V COOLMOS
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.2A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
Power Dissipation (Max): 151W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 730µA
Supplier Device Package: PG-TO262-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 100 V
на замовлення 1474 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
139+158.88 грн
Мінімальне замовлення: 139
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CY8C4025LQI-T411 Infineon-PSoC_4000T_MCU_datasheet-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c8a44f57b018a799f5fb53b5d
CY8C4025LQI-T411
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 16UFQFN
Packaging: Tray
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, Microwire, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, POR, PWM, WDT
Supplier Device Package: 16-QFN (3x3)
Number of I/O: 11
на замовлення 866 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+200.13 грн
10+143.67 грн
25+131.47 грн
100+110.73 грн
490+101.16 грн
Мінімальне замовлення: 2
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REF10KW3LBUCKSIC400TOBO1
Виробник: Infineon Technologies
Description: REF10KW3LBUCKSIC400TOBO1
Packaging: Box
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AUIRF3205ZS auirf3205z.pdf?fileId=5546d462533600a4015355ac71f813a1
AUIRF3205ZS
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Qualification: AEC-Q101
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IMZC140R038M2HXKSA1 infineon-imzc140r038m2h-datasheet-en.pdf
IMZC140R038M2HXKSA1
Виробник: Infineon Technologies
Description: IMZC140R038M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 20.4A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 6.4mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1.4 kV
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 1000 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+812.43 грн
30+467.52 грн
120+398.63 грн
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IPDQ65R018CM8XTMA1 Infineon-IPDQ65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e767040a98
IPDQ65R018CM8XTMA1
Виробник: Infineon Technologies
Description: IPDQ65R018CM8XTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
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IPDQ65R018CM8XTMA1 Infineon-IPDQ65R018CM8-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c96250806019625e767040a98
IPDQ65R018CM8XTMA1
Виробник: Infineon Technologies
Description: IPDQ65R018CM8XTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 127A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 4.7V @ 1.48mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V
на замовлення 570 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+898.44 грн
10+602.00 грн
100+518.20 грн
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EVALXDP700TOBO1 Infineon-UM012553_evaluation_board_eval_XDP700-UserManual-v01_00-EN.pdf?fileId=8ac78c8c8e7ead30018ee0854929341c
EVALXDP700TOBO1
Виробник: Infineon Technologies
Description: EVALXDP700TOBO1
Packaging: Box
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+22747.06 грн
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IRG8P60N120KD-EPBF IRG8P60N120KD%28-E%29PbF.pdf
IRG8P60N120KD-EPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 2.8mJ (on), 2.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 345 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 420 W
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IMZC120R040M2HXKSA1 IMZC120R040M2HXKSA1.pdf
IMZC120R040M2HXKSA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 48A TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 18A, 18V
Power Dissipation (Max): 218W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 800 V
на замовлення 183 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+781.77 грн
30+448.95 грн
120+382.28 грн
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IRL7833PBF irl7833pbf.pdf?fileId=5546d462533600a4015356600d71257b
IRL7833PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 150A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 38A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4170 pF @ 15 V
на замовлення 26000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
229+96.35 грн
Мінімальне замовлення: 229
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IRG4BC30KPBF description fundamentals-of-power-semiconductors
IRG4BC30KPBF
Виробник: Infineon Technologies
Description: IGBT 600V 28A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 360µJ (on), 510µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
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CYW89570DCFFBGT
Виробник: Infineon Technologies
Description: IC RF TXRX BLE
Packaging: Tape & Reel (TR)
Frequency: 2.4GHz ~ 5GHz
Type: TxRx Only
Protocol: 802.11ax
RF Family/Standard: Bluetooth
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+889.64 грн
Мінімальне замовлення: 1500
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CYW89570DCFFBGT
Виробник: Infineon Technologies
Description: IC RF TXRX BLE
Packaging: Cut Tape (CT)
Frequency: 2.4GHz ~ 5GHz
Type: TxRx Only
Protocol: 802.11ax
RF Family/Standard: Bluetooth
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1339.56 грн
10+1123.40 грн
25+1065.65 грн
100+925.77 грн
250+881.31 грн
500+849.95 грн
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IMBG65R040M2HXTMA1 infineon-imbg65r040m2h-datasheet-en.pdf
IMBG65R040M2HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1000+267.08 грн
Мінімальне замовлення: 1000
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IMBG65R040M2HXTMA1 infineon-imbg65r040m2h-datasheet-en.pdf
IMBG65R040M2HXTMA1
Виробник: Infineon Technologies
Description: SILICON CARBIDE MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 22.9A, 18V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 4.6mA
Supplier Device Package: PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 997 pF @ 400 V
на замовлення 1906 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+614.85 грн
10+403.30 грн
100+314.80 грн
В кошику  од. на суму  грн.
IKP08N65F5XKSA1 Infineon-IKP08N65F5-DS-v02_01-EN.pdf?fileId=db3a30433af5291e013af9bac1de5da9
IKP08N65F5XKSA1
Виробник: Infineon Technologies
Description: IGBT
Packaging: Bulk
на замовлення 2300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
316+68.61 грн
Мінімальне замовлення: 316
В кошику  од. на суму  грн.
BFP540FESDH6327XTSA1 Infineon-BFP540FESD-DS-v02_00-EN.pdf?fileId=5546d462689a790c01690f038cf33922
BFP540FESDH6327XTSA1
Виробник: Infineon Technologies
Description: RF TRANS NPN 5V 30GHZ 4-TSFP
Packaging: Bulk
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 20dB
Power - Max: 250mW
Current - Collector (Ic) (Max): 80mA
Voltage - Collector Emitter Breakdown (Max): 5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
Frequency - Transition: 30GHz
Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
Supplier Device Package: 4-TSFP
на замовлення 11483 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
964+22.80 грн
Мінімальне замовлення: 964
В кошику  од. на суму  грн.
IAUCN04S7L028ATMA1 Infineon-IAUCN04S7L028-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35eccb611a5a
IAUCN04S7L028ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
товару немає в наявності
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IAUCN04S7L028ATMA1 Infineon-IAUCN04S7L028-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35eccb611a5a
IAUCN04S7L028ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Qualification: AEC-Q101
на замовлення 562 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+99.64 грн
10+60.36 грн
100+39.93 грн
500+29.25 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IAUCN10S7N074ATMA1
IAUCN10S7N074ATMA1
Виробник: Infineon Technologies
Description: IAUCN10S7N074ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 39A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 35µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Qualification: AEC-Q101
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IAUCN10S7N074ATMA1
IAUCN10S7N074ATMA1
Виробник: Infineon Technologies
Description: IAUCN10S7N074ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 39A, 10V
Power Dissipation (Max): 96W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 35µA
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V
Qualification: AEC-Q101
на замовлення 4201 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+159.25 грн
10+98.08 грн
100+66.54 грн
500+49.77 грн
1000+47.62 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY7S1061GE30-10BVXI Infineon-CY7S1061G_CY7S1061GE_16-Mbit_(1_M_words_16_bit)_Static_RAM_with_Deep-Sleep_Feature_and_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec35ea53850&utm_source=cypress&utm_medium=referra
CY7S1061GE30-10BVXI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Synchronous, SDR
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1059H30-10ZSXIT
CY7C1059H30-10ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 8
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CY7C1059H30-10ZSXI
CY7C1059H30-10ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 8MBIT PARALLEL 44TSOP II
Packaging: Tray
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 8
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CY7C10612G30-10ZSXIT Infineon-CY7C10612G_CY7C10612GE_16-Mbit_(1_M_16)_Static_RAM-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec3fea63963&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C10612G30-10ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061G30-10BVJXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061G30-10BVJXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061GN30-10BVJXI Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1061GN30-10BVJXI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tray
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061GN30-10BVJXIT Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1061GN30-10BVJXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061GN30-10ZSXIT CY7C1061GN30.pdf
CY7C1061GN30-10ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1069GN30-10ZSXIT Infineon-CY7C1069GN_16-Mbit_(2M_x_8)_Static_RAM-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee2f21569df&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1069GN30-10ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 54TSOP
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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CY7C1061G30-10BV1XET Infineon-CY7C1061G_Automotive_16-Mbit_(1_M_words_x_16_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed74055586f&utm_source=cypress&utm_medium=referral&utm_campaign=202110
CY7C1061G30-10BV1XET
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061G30-10BVXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061G30-10BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1069G30-10BVXIT Infineon-CY7C1069G_CY7C1069GE_16-Mbit_(2_M_words_8_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec36baa3861
CY7C1069G30-10BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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CY7C1061GE30-10BV1XIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE30-10BV1XIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061GE30-10BVXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE30-10BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 48-VFBGA
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-VFBGA (6x8)
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061GN30-10ZXIT Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1061GN30-10ZXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1069GE30-10ZSXI Infineon-CY7C1069G_CY7C1069GE_16-Mbit_(2_M_words_8_bit)_Static_RAM_with_Error-Correcting_Code_(ECC)-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec36baa3861
CY7C1069GE30-10ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 54TSOP
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Access Time: 10 ns
Memory Organization: 2M x 8
DigiKey Programmable: Not Verified
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