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AUIRF4905L AUIRF4905L Infineon Technologies AUIRF4905S%2CL.pdf Description: MOSFET P-CH 55V 42A TO262
Packaging: Tube
Package / Case: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Qualification: AEC-Q101
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IMZC120R012M2HXKSA1 IMZC120R012M2HXKSA1 Infineon Technologies IMZC120R012M2HXKSA1.pdf Description: IMZC120R012M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 57A, 18V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
на замовлення 118 шт:
термін постачання 21-31 дні (днів)
1+1690.04 грн
30+1043.95 грн
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DD600N16KXPSA1 DD600N16KXPSA1 Infineon Technologies Infineon-DD600N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fbcc44d54 Description: DIODE MODULE GP 1600V BGPB60E2A1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60E2A-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
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IGP06N60TXKSA1 IGP06N60TXKSA1 Infineon Technologies IGP06N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b82d13ba7883 Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
на замовлення 25400 шт:
термін постачання 21-31 дні (днів)
473+43.48 грн
Мінімальне замовлення: 473
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IR21091PBF IR21091PBF Infineon Technologies ir21091.pdf?fileId=5546d462533600a4015355c7f66f167c Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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AUIRLR024N AUIRLR024N Infineon Technologies auirlr024n.pdf?fileId=5546d462533600a4015355bb194b155f Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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AUIRLR024NTRL AUIRLR024NTRL Infineon Technologies auirlr024n.pdf?fileId=5546d462533600a4015355bb194b155f Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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AUIRLR024Z AUIRLR024Z Infineon Technologies auirlr024z.pdf?fileId=5546d462533600a4015355bb21601561 Description: MOSFET N CH 55V 16A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
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IRFZ44VZPBF IRFZ44VZPBF Infineon Technologies IRSDS11304-1.pdf?t.download=true&u=5oefqw Description: IRFZ44 - 12V-300V N-CHANNEL POWE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
на замовлення 173 шт:
термін постачання 21-31 дні (днів)
173+84.89 грн
Мінімальне замовлення: 173
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IRS21064PBF IRS21064PBF Infineon Technologies INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
123+168.40 грн
Мінімальне замовлення: 123
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IRS21064PBF IRS21064PBF Infineon Technologies INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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AUIRF1404 AUIRF1404 Infineon Technologies auirf1404.pdf?fileId=5546d462533600a4015355a8c82d1372 Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
Qualification: AEC-Q101
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SPP08N50C3XKSA1 SPP08N50C3XKSA1 Infineon Technologies SP%28P%2CI%2CA%2908N50C3.pdf Description: MOSFET N-CH 560V 7.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
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S99FL512SAGMFI010 Infineon Technologies Description: IC FLASH
Packaging: Bulk
Memory Format: FLASH
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IR4426PBF IR4426PBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
на замовлення 27934 шт:
термін постачання 21-31 дні (днів)
190+109.05 грн
Мінімальне замовлення: 190
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IR4426PBF IR4426PBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
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CY8C4125LQE-S433 CY8C4125LQE-S433 Infineon Technologies Infineon-CY8C41xx_Automotive_PSoC_4_PSoC_4100S_family_based_on_Arm_Cortex_-M0_CPU-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee64c786e7a Description: IC MCU 32BIT 32KB FLASH 40UFQFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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CYW20721B2KWB9GT Infineon Technologies Infineon-CYW20721_Enhanced_Low_Power_BR_EDR_BLE_Bluetooth_5.0_SOC_for_Audio-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7e7124d1017ebeab5c8a566e Description: IC RF TXRX+MCU BLE 134WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 134-BGA, WLCSP
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 448kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 134-WLCSP (3.31x3.22)
GPIO: 40
Modulation: 4-DQPSK, 8-DPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PWM, SPI, UART
DigiKey Programmable: Not Verified
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CYW20721B2KUMLGT CYW20721B2KUMLGT Infineon Technologies Infineon-CYW20721_Enhanced_Low_Power_BR_EDR_BLE_Bluetooth_5.0_SOC_for_Audio-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7e7124d1017ebeab5c8a566e Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 448kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 4-DQPSK, 8-DPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PWM, SPI, UART
DigiKey Programmable: Not Verified
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CYW20721B2KUMLGT CYW20721B2KUMLGT Infineon Technologies Infineon-CYW20721_Enhanced_Low_Power_BR_EDR_BLE_Bluetooth_5.0_SOC_for_Audio-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7e7124d1017ebeab5c8a566e Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 448kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 4-DQPSK, 8-DPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PWM, SPI, UART
DigiKey Programmable: Not Verified
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AUIRF1404ZS AUIRF1404ZS Infineon Technologies auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376 Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404ZSTRL AUIRF1404ZSTRL Infineon Technologies auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376 Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404ZSTRL AUIRF1404ZSTRL Infineon Technologies auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376 Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404STRL AUIRF1404STRL Infineon Technologies auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374 Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404S AUIRF1404S Infineon Technologies auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374 Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
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IRG4BC30S-STRLP IRG4BC30S-STRLP Infineon Technologies irg4bc30s-s.pdf Description: IGBT 600V 34A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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IRG4BC30S-STRLP IRG4BC30S-STRLP Infineon Technologies irg4bc30s-s.pdf Description: IGBT 600V 34A 100W D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
на замовлення 353 шт:
термін постачання 21-31 дні (днів)
185+111.81 грн
Мінімальне замовлення: 185
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IRG4BC30SPBF IRG4BC30SPBF Infineon Technologies irg4bc30spbf.pdf?fileId=5546d462533600a40153563fe53a2281 description Description: IGBT 600V 34A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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S29GL01GS11DHIV23 S29GL01GS11DHIV23 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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S29GL01GS11DHAV20 S29GL01GS11DHAV20 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S29GL01GS11DHAV23 S29GL01GS11DHAV23 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S29GL01GS11DHA023 S29GL01GS11DHA023 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT CFI 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S29GL01GS11DHB020 S29GL01GS11DHB020 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S29GL01GS11DHB013 S29GL01GS11DHB013 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S29GL01GS11DHB023 S29GL01GS11DHB023 Infineon Technologies Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: IC FLASH 1GBIT CFI 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 128M x 8
Qualification: AEC-Q100
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IS29GL01GS-11DHB01 IS29GL01GS-11DHB01 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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AUIRG4BC30U-S AUIRG4BC30U-S Infineon Technologies AUIRG4BC30U-S%28L%29.pdf Description: IGBT 600V 23A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 360µJ
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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AUIRG4BC30USTRL AUIRG4BC30USTRL Infineon Technologies AUIRG4BC30U-S%28L%29.pdf Description: IGBT 600V 23A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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CYPD7191-40LDXST CYPD7191-40LDXST Infineon Technologies Infineon-CYPD7191-40LDXS_EZ-PD_CCG7S_Automotive_single-port_USB_Type-C_with_PD_and_buck-boost_controller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c85ecb34701863803ba481a9e Description: TYPE-C - AUTO
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 13
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IRF7483MTRPBF IRF7483MTRPBF Infineon Technologies irf7483mpbf.pdf?fileId=5546d462533600a4015355ff98011c32 Description: MOSFET N-CH 40V 135A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
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IRF7483MTRPBF IRF7483MTRPBF Infineon Technologies irf7483mpbf.pdf?fileId=5546d462533600a4015355ff98011c32 Description: MOSFET N-CH 40V 135A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
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AUIRL3705N AUIRL3705N Infineon Technologies IRSDS11401-1.pdf?t.download=true&u=5oefqw Description: AUIRL3705 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
213+97.31 грн
Мінімальне замовлення: 213
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CY15B256J-SXAT CY15B256J-SXAT Infineon Technologies Infineon-CY15B256J_256_Kbit_(32K_8)_Automotive_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf69af49d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY15B256J-SXET CY15B256J-SXET Infineon Technologies Infineon-CY15B256J-SXE-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee624b26e3a Description: IC FRAM 256KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
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CY15B201QN-50SXET CY15B201QN-50SXET Infineon Technologies Infineon-CY15B201QN-50SXE_CY15B201QN-50SXET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85ecb34701864fd51d263d14 Description: IC FRAM 1MBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 128K x 8
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CY15B201QN-50SXE CY15B201QN-50SXE Infineon Technologies Infineon-CY15B201QN-50SXE_CY15B201QN-50SXET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85ecb34701864fd51d263d14 Description: IC FRAM 1MBIT SPI 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 128K x 8
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IRF7457PBF IRF7457PBF Infineon Technologies irf7457pbf.pdf?fileId=5546d462533600a4015355feb4521bf8 Description: MOSFET N-CH 20V 15A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V
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IRGS4064DPBF IRGS4064DPBF Infineon Technologies IRGS4064DPbF.pdf Description: IGBT TRENCH 600V 20A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.91V @ 15V, 10A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/79ns
Switching Energy: 29µJ (on), 200µJ (off)
Test Condition: 400V, 10A, 22Ohm, 15V
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 101 W
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IMZC120R022M2HXKSA1 IMZC120R022M2HXKSA1 Infineon Technologies IMZC120R022M2HXKSA1.pdf Description: IMZC120R022M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 18V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
на замовлення 148 шт:
термін постачання 21-31 дні (днів)
1+1105.24 грн
30+657.78 грн
120+587.33 грн
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IR2136JPBF IR2136JPBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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DCDCSBCBOARDTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLE9273QX
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE9273QX
Secondary Attributes: On-Board LEDs
Embedded: No
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IR21531DPBF IR21531DPBF Infineon Technologies ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
на замовлення 16655 шт:
термін постачання 21-31 дні (днів)
2+229.21 грн
10+165.92 грн
50+143.86 грн
100+128.62 грн
250+121.85 грн
500+117.77 грн
1000+112.54 грн
2500+109.06 грн
5000+106.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IR2301PBF IR2301PBF Infineon Technologies ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 8407 шт:
термін постачання 21-31 дні (днів)
123+168.40 грн
Мінімальне замовлення: 123
В кошику  од. на суму  грн.
IR2301PBF IR2301PBF Infineon Technologies ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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T2180N16TOFVTXPSA1 T2180N16TOFVTXPSA1 Infineon Technologies Infineon-T2180N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc201240b719a2f47ca Description: SCR MODULE 1.8KV 4460A DO-200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4460 A
Voltage - Off State: 1.8 kV
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F3L200R07W2S5FPB56BPSA1 F3L200R07W2S5FPB56BPSA1 Infineon Technologies Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+6198.14 грн
В кошику  од. на суму  грн.
ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1 Infineon Technologies ISA250300C04LMDSXTMA1.pdf Description: ISA250300C04LMDSXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc), 5.8A (Ta), 7.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V, 30mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1 Infineon Technologies ISA250300C04LMDSXTMA1.pdf Description: ISA250300C04LMDSXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc), 5.8A (Ta), 7.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V, 30mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
6+62.01 грн
10+37.34 грн
100+24.24 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
TPM9673FW2624RPIEBTOBO1 Infineon Technologies Description: TPM9673FW2624RPIEBTOBO1
Packaging: Box
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IR2181PBF IR2181PBF Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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AUIRF4905L AUIRF4905S%2CL.pdf
AUIRF4905L
Виробник: Infineon Technologies
Description: MOSFET P-CH 55V 42A TO262
Packaging: Tube
Package / Case: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 42A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Qualification: AEC-Q101
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IMZC120R012M2HXKSA1 IMZC120R012M2HXKSA1.pdf
IMZC120R012M2HXKSA1
Виробник: Infineon Technologies
Description: IMZC120R012M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 129A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 57A, 18V
Power Dissipation (Max): 480W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 17.8mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 800 V
на замовлення 118 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1690.04 грн
30+1043.95 грн
В кошику  од. на суму  грн.
DD600N16KXPSA1 Infineon-DD600N-DS-v03_02-EN.pdf?fileId=db3a304412b407950112b42fbcc44d54
DD600N16KXPSA1
Виробник: Infineon Technologies
Description: DIODE MODULE GP 1600V BGPB60E2A1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 600A
Supplier Device Package: BG-PB60E2A-1
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 1.8 kA
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
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IGP06N60TXKSA1 IGP06N60T+Rev2_2G[1].pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a30432313ff5e0123b82d13ba7883
IGP06N60TXKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
на замовлення 25400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
473+43.48 грн
Мінімальне замовлення: 473
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IR21091PBF ir21091.pdf?fileId=5546d462533600a4015355c7f66f167c
IR21091PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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AUIRLR024N auirlr024n.pdf?fileId=5546d462533600a4015355bb194b155f
AUIRLR024N
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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AUIRLR024NTRL auirlr024n.pdf?fileId=5546d462533600a4015355bb194b155f
AUIRLR024NTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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AUIRLR024Z auirlr024z.pdf?fileId=5546d462533600a4015355bb21601561
AUIRLR024Z
Виробник: Infineon Technologies
Description: MOSFET N CH 55V 16A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
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IRFZ44VZPBF IRSDS11304-1.pdf?t.download=true&u=5oefqw
IRFZ44VZPBF
Виробник: Infineon Technologies
Description: IRFZ44 - 12V-300V N-CHANNEL POWE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
на замовлення 173 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
173+84.89 грн
Мінімальне замовлення: 173
В кошику  од. на суму  грн.
IRS21064PBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS21064PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
123+168.40 грн
Мінімальне замовлення: 123
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IRS21064PBF INFN-S-A0002363322-1.pdf?t.download=true&u=5oefqw
IRS21064PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 100ns, 35ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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AUIRF1404 auirf1404.pdf?fileId=5546d462533600a4015355a8c82d1372
AUIRF1404
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V
Qualification: AEC-Q101
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SPP08N50C3XKSA1 SP%28P%2CI%2CA%2908N50C3.pdf
SPP08N50C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 560V 7.6A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
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S99FL512SAGMFI010
Виробник: Infineon Technologies
Description: IC FLASH
Packaging: Bulk
Memory Format: FLASH
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IR4426PBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4426PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
на замовлення 27934 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
190+109.05 грн
Мінімальне замовлення: 190
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IR4426PBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4426PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
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CY8C4125LQE-S433 Infineon-CY8C41xx_Automotive_PSoC_4_PSoC_4100S_family_based_on_Arm_Cortex_-M0_CPU-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee64c786e7a
CY8C4125LQE-S433
Виробник: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 40UFQFN
Packaging: Tray
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
Supplier Device Package: 40-QFN (6x6)
Grade: Automotive
Number of I/O: 34
Qualification: AEC-Q100
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CYW20721B2KWB9GT Infineon-CYW20721_Enhanced_Low_Power_BR_EDR_BLE_Bluetooth_5.0_SOC_for_Audio-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7e7124d1017ebeab5c8a566e
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 134WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 134-BGA, WLCSP
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 448kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 134-WLCSP (3.31x3.22)
GPIO: 40
Modulation: 4-DQPSK, 8-DPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PWM, SPI, UART
DigiKey Programmable: Not Verified
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CYW20721B2KUMLGT Infineon-CYW20721_Enhanced_Low_Power_BR_EDR_BLE_Bluetooth_5.0_SOC_for_Audio-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7e7124d1017ebeab5c8a566e
CYW20721B2KUMLGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Tape & Reel (TR)
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 448kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 4-DQPSK, 8-DPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PWM, SPI, UART
DigiKey Programmable: Not Verified
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CYW20721B2KUMLGT Infineon-CYW20721_Enhanced_Low_Power_BR_EDR_BLE_Bluetooth_5.0_SOC_for_Audio-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7e7124d1017ebeab5c8a566e
CYW20721B2KUMLGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 40QFN
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Memory Size: 1MB Flash, 448kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C (TA)
Voltage - Supply: 1.76V ~ 3.63V
Power - Output: 5.5dBm
Protocol: Bluetooth v5.1 + EDR
Current - Receiving: 5.9mA
Data Rate (Max): 3Mbps
Current - Transmitting: 5.6mA
Supplier Device Package: 40-QFN (5x5)
GPIO: 16
Modulation: 4-DQPSK, 8-DPSK, GFSK, QPSK
RF Family/Standard: Bluetooth
Serial Interfaces: GPIO, HCI, I2C, I2S, PWM, SPI, UART
DigiKey Programmable: Not Verified
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AUIRF1404ZS auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376
AUIRF1404ZS
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404ZSTRL auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376
AUIRF1404ZSTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404ZSTRL auirf1404z.pdf?fileId=5546d462533600a4015355a8d8181376
AUIRF1404ZSTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AB (D2PAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404STRL auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374
AUIRF1404STRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
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AUIRF1404S auirf1404s.pdf?fileId=5546d462533600a4015355a8d0211374
AUIRF1404S
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V
Qualification: AEC-Q101
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IRG4BC30S-STRLP irg4bc30s-s.pdf
IRG4BC30S-STRLP
Виробник: Infineon Technologies
Description: IGBT 600V 34A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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IRG4BC30S-STRLP irg4bc30s-s.pdf
IRG4BC30S-STRLP
Виробник: Infineon Technologies
Description: IGBT 600V 34A 100W D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
на замовлення 353 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
185+111.81 грн
Мінімальне замовлення: 185
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IRG4BC30SPBF description irg4bc30spbf.pdf?fileId=5546d462533600a40153563fe53a2281
IRG4BC30SPBF
Виробник: Infineon Technologies
Description: IGBT 600V 34A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 22ns/540ns
Switching Energy: 260µJ (on), 3.45mJ (off)
Test Condition: 480V, 18A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 68 A
Power - Max: 100 W
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S29GL01GS11DHIV23 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11DHIV23
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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S29GL01GS11DHAV20 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11DHAV20
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S29GL01GS11DHAV23 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11DHAV23
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S29GL01GS11DHA023 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11DHA023
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT CFI 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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S29GL01GS11DHB020 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11DHB020
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S29GL01GS11DHB013 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
S29GL01GS11DHB013
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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S29GL01GS11DHB023 Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
S29GL01GS11DHB023
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT CFI 64FBGA
Packaging: Tape & Reel (TR)
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Grade: Automotive
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 128M x 8
Qualification: AEC-Q100
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IS29GL01GS-11DHB01 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium=referral&utm_campai
IS29GL01GS-11DHB01
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 110 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
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AUIRG4BC30U-S AUIRG4BC30U-S%28L%29.pdf
AUIRG4BC30U-S
Виробник: Infineon Technologies
Description: IGBT 600V 23A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 360µJ
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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AUIRG4BC30USTRL AUIRG4BC30U-S%28L%29.pdf
AUIRG4BC30USTRL
Виробник: Infineon Technologies
Description: IGBT 600V 23A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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CYPD7191-40LDXST Infineon-CYPD7191-40LDXS_EZ-PD_CCG7S_Automotive_single-port_USB_Type-C_with_PD_and_buck-boost_controller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c85ecb34701863803ba481a9e
CYPD7191-40LDXST
Виробник: Infineon Technologies
Description: TYPE-C - AUTO
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 13
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IRF7483MTRPBF irf7483mpbf.pdf?fileId=5546d462533600a4015355ff98011c32
IRF7483MTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 135A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
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IRF7483MTRPBF irf7483mpbf.pdf?fileId=5546d462533600a4015355ff98011c32
IRF7483MTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 135A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
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AUIRL3705N IRSDS11401-1.pdf?t.download=true&u=5oefqw
AUIRL3705N
Виробник: Infineon Technologies
Description: AUIRL3705 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
213+97.31 грн
Мінімальне замовлення: 213
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CY15B256J-SXAT Infineon-CY15B256J_256_Kbit_(32K_8)_Automotive_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf69af49d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY15B256J-SXAT
Виробник: Infineon Technologies
Description: IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY15B256J-SXET Infineon-CY15B256J-SXE-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee624b26e3a
CY15B256J-SXET
Виробник: Infineon Technologies
Description: IC FRAM 256KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
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CY15B201QN-50SXET Infineon-CY15B201QN-50SXE_CY15B201QN-50SXET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85ecb34701864fd51d263d14
CY15B201QN-50SXET
Виробник: Infineon Technologies
Description: IC FRAM 1MBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 128K x 8
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CY15B201QN-50SXE Infineon-CY15B201QN-50SXE_CY15B201QN-50SXET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85ecb34701864fd51d263d14
CY15B201QN-50SXE
Виробник: Infineon Technologies
Description: IC FRAM 1MBIT SPI 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 128K x 8
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IRF7457PBF irf7457pbf.pdf?fileId=5546d462533600a4015355feb4521bf8
IRF7457PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 15A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V
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IRGS4064DPBF IRGS4064DPbF.pdf
IRGS4064DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 20A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.91V @ 15V, 10A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/79ns
Switching Energy: 29µJ (on), 200µJ (off)
Test Condition: 400V, 10A, 22Ohm, 15V
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 101 W
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IMZC120R022M2HXKSA1 IMZC120R022M2HXKSA1.pdf
IMZC120R022M2HXKSA1
Виробник: Infineon Technologies
Description: IMZC120R022M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 18V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
на замовлення 148 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1105.24 грн
30+657.78 грн
120+587.33 грн
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IR2136JPBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR2136JPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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DCDCSBCBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE9273QX
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE9273QX
Secondary Attributes: On-Board LEDs
Embedded: No
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IR21531DPBF ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
IR21531DPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
на замовлення 16655 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+229.21 грн
10+165.92 грн
50+143.86 грн
100+128.62 грн
250+121.85 грн
500+117.77 грн
1000+112.54 грн
2500+109.06 грн
5000+106.96 грн
Мінімальне замовлення: 2
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IR2301PBF ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc
IR2301PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 8407 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
123+168.40 грн
Мінімальне замовлення: 123
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IR2301PBF ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc
IR2301PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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T2180N16TOFVTXPSA1 Infineon-T2180N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc201240b719a2f47ca
T2180N16TOFVTXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 4460A DO-200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4460 A
Voltage - Off State: 1.8 kV
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F3L200R07W2S5FPB56BPSA1
F3L200R07W2S5FPB56BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6198.14 грн
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ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1.pdf
ISA250300C04LMDSXTMA1
Виробник: Infineon Technologies
Description: ISA250300C04LMDSXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc), 5.8A (Ta), 7.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V, 30mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1.pdf
ISA250300C04LMDSXTMA1
Виробник: Infineon Technologies
Description: ISA250300C04LMDSXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc), 5.8A (Ta), 7.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V, 30mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+62.01 грн
10+37.34 грн
100+24.24 грн
Мінімальне замовлення: 6
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TPM9673FW2624RPIEBTOBO1
Виробник: Infineon Technologies
Description: TPM9673FW2624RPIEBTOBO1
Packaging: Box
товару немає в наявності
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IR2181PBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR2181PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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