Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119459) > Сторінка 776 з 1991

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KITPSE84EVALTOBO1 KITPSE84EVALTOBO1 Infineon Technologies infineon-psoc-edge-e84-evaluation-kit-product-brief.pdf Description: PSOC EDGE E84 EVAL KIT
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s), LCD, Accessories
Core Processor: ARM® Cortex®-M33, Cortex®-M55
Utilized IC / Part: PSE846GPS2DBZC4
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+24761.62 грн
В кошику  од. на суму  грн.
TLE493DW3B6B1HTSA1 TLE493DW3B6B1HTSA1 Infineon Technologies Infineon-TLE493D-W3B6-Bx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f42a9b8b7b75 Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3+124.39 грн
5+106.07 грн
10+101.10 грн
25+89.25 грн
50+85.42 грн
100+81.91 грн
500+73.64 грн
1000+71.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE493DW3B6B2HTSA1 TLE493DW3B6B2HTSA1 Infineon Technologies Infineon-TLE493D-W3B6-Bx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f42a9b8b7b75 Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
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TLE493DW3B6B3HTSA1 TLE493DW3B6B3HTSA1 Infineon Technologies Infineon-TLE493D-W3B6-Bx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f42a9b8b7b75 Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
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IPAW60R360P7SXKSA1 IPAW60R360P7SXKSA1 Infineon Technologies infineon-ipaw60r360p7s-datasheet-en.pdf Description: MOSFET N-CH 650V 9A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
390+51.84 грн
Мінімальне замовлення: 390
В кошику  од. на суму  грн.
REF65WHFZVSLPPAG2TOBO1 REF65WHFZVSLPPAG2TOBO1 Infineon Technologies infineon-65-w-atq-gan-usb-pd-dual-c-power-charger-and-adaptor-solution-demo-board-ref-65w-2c-gan-pag1-test-report-usermanual-en.pdf Description: OTHERS-WCS
Packaging: Box
Function: USB Type-C Power Delivery (PD)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CYPAP212A1-14SXI
Embedded: No
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CY3295-MTK CY3295-MTK Infineon Technologies Description: OTHER PL90
Packaging: Tray
Mounting Type: Fixed
Contents: Board(s)
Utilized IC / Part: CY3295
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CY3295-TTBRIDGE CY3295-TTBRIDGE Infineon Technologies Description: OTHER PL90
Packaging: Tray
Function: Touch Screen Controller
Type: Interface
Contents: Board(s)
Embedded: No
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S29GL01GS10DHSS30 S29GL01GS10DHSS30 Infineon Technologies PdfFile_133368.pdf Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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SPA21N50C3XKSA1 SPA21N50C3XKSA1 Infineon Technologies SPP_I_A21N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637eeb9340085 Description: MOSFET N-CH 560V 21A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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CY9BF168MPMC-GNE2 CY9BF168MPMC-GNE2 Infineon Technologies Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3 Description: IC MCU 32BT 1.03125MB FLSH 80QFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1.03125MB (1.03125M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
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CY9BF168NPMC-G-MNE2 CY9BF168NPMC-G-MNE2 Infineon Technologies Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3 Description: IC MCU 32BIT 1.03125MB 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1.03125MB (1.03125M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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CY9BF168NPMC-GNE2 CY9BF168NPMC-GNE2 Infineon Technologies Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3 Description: IC MCU 32B 1.03125MB FLSH 100QFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1.03125MB (1.03125M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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TLF35585QVS02XUMA2 TLF35585QVS02XUMA2 Infineon Technologies Infineon-TLF35585QVS02-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fa8df5054 Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive Systems
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1889 шт:
термін постачання 21-31 дні (днів)
1+490.52 грн
10+364.70 грн
25+337.78 грн
100+289.25 грн
250+276.03 грн
500+268.05 грн
1000+257.21 грн
В кошику  од. на суму  грн.
TLF35585QVS02XUMA1 TLF35585QVS02XUMA1 Infineon Technologies Infineon-TLF35585QVS02-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bd5fa8df5054 Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2453 шт:
термін постачання 21-31 дні (днів)
1+609.44 грн
10+456.46 грн
25+423.75 грн
100+363.93 грн
250+356.84 грн
В кошику  од. на суму  грн.
TLF35585QVS02BOARDTOBO1 Infineon Technologies Description: APS_OTHER
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLF35585QVS02
Embedded: No
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CYUSB230268LTXSXQLA1 CYUSB230268LTXSXQLA1 Infineon Technologies Infineon-EZ-USB_TMHX3_AUTOMOTIVE_USB_3-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c8929aa4d0189bd05a5f413ed Description: USB-DATA AUTOMOTIVE
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: GPIO, I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 2.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 16
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CYUSB230268LTXSTXUMA1 CYUSB230268LTXSTXUMA1 Infineon Technologies Infineon-EZ-USB_TMHX3_AUTOMOTIVE_USB_3-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c8929aa4d0189bd05a5f413ed Description: USB-DATA AUTOMOTIVE
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: GPIO, I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 2.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 16
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AIHD06N60RATMA2 Infineon Technologies Description: DISCRETE SWITCHES
Packaging: Tape & Reel (TR)
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FS200R07N3E4RB11BOSA1 Infineon Technologies Infineon-FS200R07N3E4R_B11-DS-v02_00-en_de.pdf?fileId=db3a30432f29829e012f496103d258b8 Description: FS200R07 - IGBT MODULE
Packaging: Bulk
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
3+7716.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IKFW40N65ES5XKSA1 IKFW40N65ES5XKSA1 Infineon Technologies Infineon-IKFW40N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174daaa2bc525ee Description: IGBT TRENCH FS 650V 60A HSIP247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
на замовлення 3540 шт:
термін постачання 21-31 дні (днів)
62+323.85 грн
Мінімальне замовлення: 62
В кошику  од. на суму  грн.
IM12B15CC1XKMA1 IM12B15CC1XKMA1 Infineon Technologies Infineon-IM12B15CC1-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01908868cea2231d Description: IGBT IPM 1.2KV 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.094", 27.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Voltage: 1.2 kV
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
1+1316.67 грн
14+992.17 грн
28+947.67 грн
112+837.98 грн
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IM12B10CC1XKMA1 IM12B10CC1XKMA1 Infineon Technologies Infineon-IM12B10CC1-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01908868c6452312 Description: IGBT IPM 1.2KV 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.094", 27.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Voltage: 1.2 kV
на замовлення 278 шт:
термін постачання 21-31 дні (днів)
1+1408.20 грн
14+1056.96 грн
28+1008.83 грн
112+878.91 грн
252+849.90 грн
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IRF3575DTRPBF IRF3575DTRPBF Infineon Technologies IRF3575DTRPBF_Web.pdf Description: MOSFET 2N-CH 25V 303A 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerWFQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 303A (Tc)
Supplier Device Package: 32-PQFN (6x6)
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AIGBG15N120S7ATMA1 AIGBG15N120S7ATMA1 Infineon Technologies AIGBG15N120S7ATMA1.pdf Description: AIGBG15N120S7ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-7-12
IGBT Type: Trench Field Stop
Gate Charge: 93 nC
Grade: Automotive
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 176 W
Qualification: AEC-Q101
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AIGBG15N120S7ATMA1 AIGBG15N120S7ATMA1 Infineon Technologies AIGBG15N120S7ATMA1.pdf Description: AIGBG15N120S7ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-7-12
IGBT Type: Trench Field Stop
Gate Charge: 93 nC
Grade: Automotive
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 176 W
Qualification: AEC-Q101
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CY8CLED01D01-56LTXI CY8CLED01D01-56LTXI Infineon Technologies CY8CLED0x%28D%2CG%290x.pdf Description: IC MCU 8BIT 16KB FLASH 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 14
DigiKey Programmable: Not Verified
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CY8CLED03G01-56LTXI CY8CLED03G01-56LTXI Infineon Technologies CY8CLED0x%28D%2CG%290x.pdf Description: IC MCU 8BIT 16KB FLASH 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 14
DigiKey Programmable: Not Verified
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CY8CLED04G01-56LTXI CY8CLED04G01-56LTXI Infineon Technologies CY8CLED0x%28D%2CG%290x.pdf Description: IC MCU 8BIT 16KB FLASH 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 14
DigiKey Programmable: Not Verified
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CY8C4248LQI-BL553T CY8C4248LQI-BL553T Infineon Technologies 4200_BLE_Family_2-22-18.pdf Description: IC MCU 32BIT 256KB FLASH 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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IPL65R165CFDAUMA2 IPL65R165CFDAUMA2 Infineon Technologies Infineon-IPL65R165CFD-DS-v02_01-EN.pdf?fileId=db3a304344d727a80144dee127e60baf Description: MOSFET N-CH 650V 21.3A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.3A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.3A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
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FF1400R17IP4B60BOSA1 Infineon Technologies infineon-ff1400r17ip4-datasheet-en.pdf?fileId=db3a30432a14dd54012a32defcf70297 Description: IGBT MODULE 1700V 1400A 9550W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1.4kA
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 9550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110000 pF @ 25 V
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CY7C1565KV18-500BZXC CY7C1565KV18-500BZXC Infineon Technologies Infineon-CY7C1565KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe0b293135&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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6EDL04I065NRXUMA1 6EDL04I065NRXUMA1 Infineon Technologies 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04I065NRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
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6EDL04I065NRXUMA1 6EDL04I065NRXUMA1 Infineon Technologies 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04I065NRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 2989 шт:
термін постачання 21-31 дні (днів)
2+173.68 грн
5+148.71 грн
10+141.93 грн
25+125.62 грн
50+120.46 грн
100+115.71 грн
500+104.44 грн
1000+100.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
6EDL04I065PRXUMA1 6EDL04I065PRXUMA1 Infineon Technologies 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04I065PRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
товару немає в наявності
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6EDL04I065PRXUMA1 6EDL04I065PRXUMA1 Infineon Technologies 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf Description: 6EDL04I065PRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
2+173.68 грн
5+148.71 грн
10+141.93 грн
25+125.62 грн
50+120.46 грн
100+115.71 грн
500+104.44 грн
1000+100.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
6EDL04I06NCX1SA1 6EDL04I06NCX1SA1 Infineon Technologies Infineon-6EDXXXX06XXX-DS-v02_05-EN.pdf?fileId=db3a30433ecb86d4013ed135270c1242 Description: IC GATE DRVR HALF-BRIDGE CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: Chip
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
6EDL04I06PCX1SA1 6EDL04I06PCX1SA1 Infineon Technologies Infineon-6EDXXXX06XXX-DS-v02_05-EN.pdf?fileId=db3a30433ecb86d4013ed135270c1242 Description: IC GATE DRVR HALF-BRIDGE CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: Chip
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
6EDL04N06PCX1SA1 6EDL04N06PCX1SA1 Infineon Technologies Infineon-6EDXXXX06XXX-DS-v02_05-EN.pdf?fileId=db3a30433ecb86d4013ed135270c1242 Description: IC GATE DRVR HALF-BRIDGE CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: Chip
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CYT2B97CACQ0AZSGS CYT2B97CACQ0AZSGS Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
на замовлення 590 шт:
термін постачання 21-31 дні (днів)
1+916.89 грн
10+696.18 грн
60+614.98 грн
120+556.51 грн
300+534.74 грн
540+523.45 грн
В кошику  од. на суму  грн.
CYT2B97CACQ0AZEGS CYT2B97CACQ0AZEGS Infineon Technologies Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c Description: IC MCU 32BT 2.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
1+933.32 грн
10+709.21 грн
60+626.73 грн
120+567.21 грн
300+545.09 грн
540+533.63 грн
В кошику  од. на суму  грн.
CYT2BL7CAAQ0AZSGST CYT2BL7CAAQ0AZSGST Infineon Technologies infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf Description: IC MCU 32BIT 4.16MB FLSH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.16MB (4.16M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 54x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
на замовлення 570 шт:
термін постачання 21-31 дні (днів)
1+1183.67 грн
10+906.14 грн
25+847.86 грн
100+735.55 грн
В кошику  од. на суму  грн.
CYT3BB7CEBQ1AEEGS CYT3BB7CEBQ1AEEGS Infineon Technologies Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v09_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732 Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
на замовлення 595 шт:
термін постачання 21-31 дні (днів)
1+1495.04 грн
10+1153.47 грн
60+1028.91 грн
120+933.97 грн
300+900.58 грн
540+883.27 грн
В кошику  од. на суму  грн.
CYT4BB7CEBQ1AEEGS CYT4BB7CEBQ1AEEGS Infineon Technologies Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v09_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732 Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
на замовлення 594 шт:
термін постачання 21-31 дні (днів)
1+1608.48 грн
10+1244.09 грн
60+1111.28 грн
120+1009.18 грн
300+973.59 грн
540+955.14 грн
В кошику  од. на суму  грн.
IAUCN08S7L013ATMA1 IAUCN08S7L013ATMA1 Infineon Technologies Infineon-IAUCN08S7L013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e01978442d4b24458 Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 293A (Tj)
Rds On (Max) @ Id, Vgs: 1.26mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 2V @ 131µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9554 pF @ 40 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IAUCN08S7L013ATMA1 IAUCN08S7L013ATMA1 Infineon Technologies Infineon-IAUCN08S7L013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e01978442d4b24458 Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 293A (Tj)
Rds On (Max) @ Id, Vgs: 1.26mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 2V @ 131µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9554 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1249 шт:
термін постачання 21-31 дні (днів)
1+325.45 грн
10+207.55 грн
100+147.07 грн
500+119.72 грн
В кошику  од. на суму  грн.
IAUCN04S7N010GATMA1 IAUCN04S7N010GATMA1 Infineon Technologies infineon-iaucn04s7n010g-datasheet-en.pdf Description: IAUCN04S7N010GATMA1
Packaging: Tray
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 88A, 10V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 3V @ 50µA
Supplier Device Package: PG-THSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5026 pF @ 20 V
Qualification: AEC-Q101
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
2+174.46 грн
10+108.41 грн
100+74.39 грн
500+56.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUCN08S7N019TATMA1 IAUCN08S7N019TATMA1 Infineon Technologies Infineon-IAUCN08S7N019T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c96250806019642831bb47bcc Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.94mOhm @ 88A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 93.4µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6061 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+88.82 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUCN08S7N019TATMA1 IAUCN08S7N019TATMA1 Infineon Technologies Infineon-IAUCN08S7N019T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c96250806019642831bb47bcc Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.94mOhm @ 88A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 93.4µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6061 pF @ 40 V
Qualification: AEC-Q101
на замовлення 5779 шт:
термін постачання 21-31 дні (днів)
2+262.86 грн
10+166.19 грн
100+116.76 грн
500+98.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUCN08S7N016TATMA1 IAUCN08S7N016TATMA1 Infineon Technologies Infineon-IAUCN08S7N016T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d785ac52e80 Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 88A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-LHDSO-10-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7394 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
2000+109.03 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUCN08S7N016TATMA1 IAUCN08S7N016TATMA1 Infineon Technologies Infineon-IAUCN08S7N016T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d785ac52e80 Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 88A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-LHDSO-10-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7394 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4918 шт:
термін постачання 21-31 дні (днів)
2+305.89 грн
10+194.74 грн
100+138.11 грн
500+120.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
KP405XTMA1 KP405XTMA1 Infineon Technologies Infineon-KP405-TPD-v01_00-EN.pdf Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.61PSI ~ 40.61PSI (38.7kPa ~ 280kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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KP405XTMA1 KP405XTMA1 Infineon Technologies Infineon-KP405-TPD-v01_00-EN.pdf Description: INTEGRATED PRESSURE SENS
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.61PSI ~ 40.61PSI (38.7kPa ~ 280kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3399 шт:
термін постачання 21-31 дні (днів)
1+366.13 грн
5+317.01 грн
10+303.75 грн
25+270.10 грн
50+259.89 грн
100+250.54 грн
500+227.90 грн
1000+220.99 грн
В кошику  од. на суму  грн.
BTS282ZE3180AATMA2 BTS282ZE3180AATMA2 Infineon Technologies BTS282Z_DS_13.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043405f2978014071d29660203c&ack=t Description: MOSFET N-CH 49V 80A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO263-7-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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S25FS064SAGMFI010 S25FS064SAGMFI010 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
на замовлення 2262 шт:
термін постачання 21-31 дні (днів)
2+163.51 грн
10+147.36 грн
25+143.17 грн
50+131.33 грн
100+128.30 грн
280+123.80 грн
560+118.81 грн
1120+115.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S25FS064SAGMFI011 S25FS064SAGMFI011 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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S25FS064SDSMFI010 S25FS064SDSMFI010 Infineon Technologies Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
2+180.72 грн
10+162.57 грн
25+157.96 грн
50+144.89 грн
100+141.52 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IRG4BC30KPBF IRG4BC30KPBF Infineon Technologies fundamentals-of-power-semiconductors description Description: IGBT 600V 28A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 360µJ (on), 510µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
товару немає в наявності
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IRFZ46ZSTRLPBF IRFZ46ZSTRLPBF Infineon Technologies infineon-irfz46z-datasheet-en.pdf Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
товару немає в наявності
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KITPSE84EVALTOBO1 infineon-psoc-edge-e84-evaluation-kit-product-brief.pdf
KITPSE84EVALTOBO1
Виробник: Infineon Technologies
Description: PSOC EDGE E84 EVAL KIT
Packaging: Box
Mounting Type: Fixed
Type: MCU 32-Bit
Contents: Board(s), Cable(s), LCD, Accessories
Core Processor: ARM® Cortex®-M33, Cortex®-M55
Utilized IC / Part: PSE846GPS2DBZC4
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+24761.62 грн
В кошику  од. на суму  грн.
TLE493DW3B6B1HTSA1 Infineon-TLE493D-W3B6-Bx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f42a9b8b7b75
TLE493DW3B6B1HTSA1
Виробник: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+124.39 грн
5+106.07 грн
10+101.10 грн
25+89.25 грн
50+85.42 грн
100+81.91 грн
500+73.64 грн
1000+71.06 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
TLE493DW3B6B2HTSA1 Infineon-TLE493D-W3B6-Bx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f42a9b8b7b75
TLE493DW3B6B2HTSA1
Виробник: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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TLE493DW3B6B3HTSA1 Infineon-TLE493D-W3B6-Bx-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194f42a9b8b7b75
TLE493DW3B6B3HTSA1
Виробник: Infineon Technologies
Description: SEN HALL EFFECT I2C PG-TSOP6-6-8
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Output Type: I2C
Mounting Type: Surface Mount
Axis: X, Y, Z
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 2.8V ~ 5.5V
Technology: Hall Effect
Resolution: 14 b
Sensing Range: ±160mT
Current - Supply (Max): 6mA
Supplier Device Package: PG-TSOP6-6-8
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
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IPAW60R360P7SXKSA1 infineon-ipaw60r360p7s-datasheet-en.pdf
IPAW60R360P7SXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 9A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 2.7A, 10V
Power Dissipation (Max): 22W (Tc)
Vgs(th) (Max) @ Id: 4V @ 140µA
Supplier Device Package: PG-TO220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 555 pF @ 400 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
390+51.84 грн
Мінімальне замовлення: 390
В кошику  од. на суму  грн.
REF65WHFZVSLPPAG2TOBO1 infineon-65-w-atq-gan-usb-pd-dual-c-power-charger-and-adaptor-solution-demo-board-ref-65w-2c-gan-pag1-test-report-usermanual-en.pdf
REF65WHFZVSLPPAG2TOBO1
Виробник: Infineon Technologies
Description: OTHERS-WCS
Packaging: Box
Function: USB Type-C Power Delivery (PD)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: CYPAP212A1-14SXI
Embedded: No
товару немає в наявності
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CY3295-MTK
CY3295-MTK
Виробник: Infineon Technologies
Description: OTHER PL90
Packaging: Tray
Mounting Type: Fixed
Contents: Board(s)
Utilized IC / Part: CY3295
товару немає в наявності
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CY3295-TTBRIDGE
CY3295-TTBRIDGE
Виробник: Infineon Technologies
Description: OTHER PL90
Packaging: Tray
Function: Touch Screen Controller
Type: Interface
Contents: Board(s)
Embedded: No
товару немає в наявності
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S29GL01GS10DHSS30 PdfFile_133368.pdf
S29GL01GS10DHSS30
Виробник: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
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SPA21N50C3XKSA1 SPP_I_A21N50C3_Rev[1].3.0.pdf?folderId=db3a3043163797a6011637e7be4f0060&fileId=db3a3043163797a6011637eeb9340085
SPA21N50C3XKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 560V 21A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 560 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
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CY9BF168MPMC-GNE2 Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3
CY9BF168MPMC-GNE2
Виробник: Infineon Technologies
Description: IC MCU 32BT 1.03125MB FLSH 80QFP
Packaging: Tray
Package / Case: 80-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1.03125MB (1.03125M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 80-LQFP (12x12)
Number of I/O: 63
DigiKey Programmable: Not Verified
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CY9BF168NPMC-G-MNE2 Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3
CY9BF168NPMC-G-MNE2
Виробник: Infineon Technologies
Description: IC MCU 32BIT 1.03125MB 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1.03125MB (1.03125M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, I2C, LINbus, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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CY9BF168NPMC-GNE2 Infineon-CY9B160R_SERIES_32_BIT_ARM_CORTEX_M4F_FM4_MICROCONTROLLER-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c81fb7ad2018210edfd2976b3
CY9BF168NPMC-GNE2
Виробник: Infineon Technologies
Description: IC MCU 32B 1.03125MB FLSH 100QFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 160MHz
Program Memory Size: 1.03125MB (1.03125M x 8)
RAM Size: 128K x 8
Operating Temperature: -40°C ~ 125°C (TJ)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b SAR; D/A 2x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I2C, LINbus, SD, SPI, UART/USART
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 80
DigiKey Programmable: Not Verified
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TLF35585QVS02XUMA2 Infineon-TLF35585QVS02-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186bd5fa8df5054
TLF35585QVS02XUMA2
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Automotive Systems
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1889 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+490.52 грн
10+364.70 грн
25+337.78 грн
100+289.25 грн
250+276.03 грн
500+268.05 грн
1000+257.21 грн
В кошику  од. на суму  грн.
TLF35585QVS02XUMA1 Infineon-TLF35585QVS02-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c869190210186bd5fa8df5054
TLF35585QVS02XUMA1
Виробник: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2453 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+609.44 грн
10+456.46 грн
25+423.75 грн
100+363.93 грн
250+356.84 грн
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TLF35585QVS02BOARDTOBO1
Виробник: Infineon Technologies
Description: APS_OTHER
Packaging: Box
Function: Motor Controller/Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: TLF35585QVS02
Embedded: No
товару немає в наявності
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CYUSB230268LTXSXQLA1 Infineon-EZ-USB_TMHX3_AUTOMOTIVE_USB_3-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c8929aa4d0189bd05a5f413ed
CYUSB230268LTXSXQLA1
Виробник: Infineon Technologies
Description: USB-DATA AUTOMOTIVE
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: GPIO, I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 2.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 16
товару немає в наявності
В кошику  од. на суму  грн.
CYUSB230268LTXSTXUMA1 Infineon-EZ-USB_TMHX3_AUTOMOTIVE_USB_3-DataSheet-v09_00-EN.pdf?fileId=8ac78c8c8929aa4d0189bd05a5f413ed
CYUSB230268LTXSTXUMA1
Виробник: Infineon Technologies
Description: USB-DATA AUTOMOTIVE
Packaging: Tape & Reel (TR)
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: GPIO, I2C
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 3V ~ 3.6V
Controller Series: CYUSB
Program Memory Type: ROM (32kB)
Applications: USB 2.0 Hub Controller
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 16
товару немає в наявності
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AIHD06N60RATMA2
Виробник: Infineon Technologies
Description: DISCRETE SWITCHES
Packaging: Tape & Reel (TR)
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FS200R07N3E4RB11BOSA1 Infineon-FS200R07N3E4R_B11-DS-v02_00-en_de.pdf?fileId=db3a30432f29829e012f496103d258b8
Виробник: Infineon Technologies
Description: FS200R07 - IGBT MODULE
Packaging: Bulk
на замовлення 70 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+7716.41 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IKFW40N65ES5XKSA1 Infineon-IKFW40N65ES5-DataSheet-v02_01-EN.pdf?fileId=5546d46274cf54d50174daaa2bc525ee
IKFW40N65ES5XKSA1
Виробник: Infineon Technologies
Description: IGBT TRENCH FS 650V 60A HSIP247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 75 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Supplier Device Package: PG-HSIP247-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 17ns/124ns
Switching Energy: 560µJ (on), 320µJ (off)
Test Condition: 400V, 30A, 13Ohm, 15V
Gate Charge: 70 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 106 W
на замовлення 3540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
62+323.85 грн
Мінімальне замовлення: 62
В кошику  од. на суму  грн.
IM12B15CC1XKMA1 Infineon-IM12B15CC1-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01908868cea2231d
IM12B15CC1XKMA1
Виробник: Infineon Technologies
Description: IGBT IPM 1.2KV 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.094", 27.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Voltage: 1.2 kV
на замовлення 238 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1316.67 грн
14+992.17 грн
28+947.67 грн
112+837.98 грн
В кошику  од. на суму  грн.
IM12B10CC1XKMA1 Infineon-IM12B10CC1-DataSheet-v01_01-EN.pdf?fileId=8ac78c8c90530b3a01908868c6452312
IM12B10CC1XKMA1
Виробник: Infineon Technologies
Description: IGBT IPM 1.2KV 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.094", 27.80mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Voltage: 1.2 kV
на замовлення 278 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1408.20 грн
14+1056.96 грн
28+1008.83 грн
112+878.91 грн
252+849.90 грн
В кошику  од. на суму  грн.
IRF3575DTRPBF IRF3575DTRPBF_Web.pdf
IRF3575DTRPBF
Виробник: Infineon Technologies
Description: MOSFET 2N-CH 25V 303A 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-PowerWFQFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 303A (Tc)
Supplier Device Package: 32-PQFN (6x6)
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AIGBG15N120S7ATMA1 AIGBG15N120S7ATMA1.pdf
AIGBG15N120S7ATMA1
Виробник: Infineon Technologies
Description: AIGBG15N120S7ATMA1
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-7-12
IGBT Type: Trench Field Stop
Gate Charge: 93 nC
Grade: Automotive
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 176 W
Qualification: AEC-Q101
товару немає в наявності
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AIGBG15N120S7ATMA1 AIGBG15N120S7ATMA1.pdf
AIGBG15N120S7ATMA1
Виробник: Infineon Technologies
Description: AIGBG15N120S7ATMA1
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: PG-TO263-7-12
IGBT Type: Trench Field Stop
Gate Charge: 93 nC
Grade: Automotive
Current - Collector (Ic) (Max): 33 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 176 W
Qualification: AEC-Q101
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CY8CLED01D01-56LTXI CY8CLED0x%28D%2CG%290x.pdf
CY8CLED01D01-56LTXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 14
DigiKey Programmable: Not Verified
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CY8CLED03G01-56LTXI CY8CLED0x%28D%2CG%290x.pdf
CY8CLED03G01-56LTXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 14
DigiKey Programmable: Not Verified
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CY8CLED04G01-56LTXI CY8CLED0x%28D%2CG%290x.pdf
CY8CLED04G01-56LTXI
Виробник: Infineon Technologies
Description: IC MCU 8BIT 16KB FLASH 56VQFN
Packaging: Tray
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: DALI, DMX512, I2C, IrDA, SPI, UART/USART
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Controller Series: CY8CLED
Program Memory Type: FLASH (16kB)
Applications: Intelligent LED Driver
Core Processor: M8C
Supplier Device Package: 56-QFN (8x8)
Number of I/O: 14
DigiKey Programmable: Not Verified
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CY8C4248LQI-BL553T 4200_BLE_Family_2-22-18.pdf
CY8C4248LQI-BL553T
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 56QFN
Packaging: Cut Tape (CT)
Package / Case: 56-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Bluetooth, Brown-out Detect/Reset, Cap Sense, DMA LCD, LVD, POR, PWM, SmartCard, SmartSense, WDT
Supplier Device Package: 56-QFN (7x7)
Number of I/O: 36
DigiKey Programmable: Not Verified
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IPL65R165CFDAUMA2 Infineon-IPL65R165CFD-DS-v02_01-EN.pdf?fileId=db3a304344d727a80144dee127e60baf
IPL65R165CFDAUMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 21.3A 4VSON
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21.3A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 9.3A, 10V
Power Dissipation (Max): 195W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 900µA
Supplier Device Package: PG-VSON-4
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V
товару немає в наявності
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FF1400R17IP4B60BOSA1 infineon-ff1400r17ip4-datasheet-en.pdf?fileId=db3a30432a14dd54012a32defcf70297
Виробник: Infineon Technologies
Description: IGBT MODULE 1700V 1400A 9550W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 1.4kA
NTC Thermistor: Yes
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1400 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 9550 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 110000 pF @ 25 V
товару немає в наявності
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CY7C1565KV18-500BZXC Infineon-CY7C1565KV18_72-Mbit_QDR(R)_II+_SRAM_Four-Word_Burst_Architecture_(2.5_Cycle_Read_Latency)-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebe0b293135&utm_source=cypress&utm_medium=referral&utm_campaign=202110_gl
CY7C1565KV18-500BZXC
Виробник: Infineon Technologies
Description: IC SRAM 72MBIT PAR 165FBGA
Packaging: Tray
Package / Case: 165-LBGA
Mounting Type: Surface Mount
Memory Size: 72Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Technology: SRAM - Synchronous, QDR II+
Clock Frequency: 500 MHz
Memory Format: SRAM
Supplier Device Package: 165-FBGA (13x15)
Memory Interface: Parallel
Memory Organization: 2M x 36
DigiKey Programmable: Not Verified
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6EDL04I065NRXUMA1 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04I065NRXUMA1
Виробник: Infineon Technologies
Description: 6EDL04I065NRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
товару немає в наявності
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6EDL04I065NRXUMA1 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04I065NRXUMA1
Виробник: Infineon Technologies
Description: 6EDL04I065NRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 2989 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+173.68 грн
5+148.71 грн
10+141.93 грн
25+125.62 грн
50+120.46 грн
100+115.71 грн
500+104.44 грн
1000+100.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
6EDL04I065PRXUMA1 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04I065PRXUMA1
Виробник: Infineon Technologies
Description: 6EDL04I065PRXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
товару немає в наявності
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6EDL04I065PRXUMA1 6EDL04xR%20Family%20final%20datasheet%20Rev2_0.pdf
6EDL04I065PRXUMA1
Виробник: Infineon Technologies
Description: 6EDL04I065PRXUMA1
Packaging: Cut Tape (CT)
Package / Case: 25-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 10V ~ 25V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-TSSOP-25
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
Current - Peak Output (Source, Sink): 165mA, 375mA
на замовлення 2950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+173.68 грн
5+148.71 грн
10+141.93 грн
25+125.62 грн
50+120.46 грн
100+115.71 грн
500+104.44 грн
1000+100.95 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
6EDL04I06NCX1SA1 Infineon-6EDXXXX06XXX-DS-v02_05-EN.pdf?fileId=db3a30433ecb86d4013ed135270c1242
6EDL04I06NCX1SA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: Chip
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
DigiKey Programmable: Not Verified
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6EDL04I06PCX1SA1 Infineon-6EDXXXX06XXX-DS-v02_05-EN.pdf?fileId=db3a30433ecb86d4013ed135270c1242
6EDL04I06PCX1SA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: Chip
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
DigiKey Programmable: Not Verified
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6EDL04N06PCX1SA1 Infineon-6EDXXXX06XXX-DS-v02_05-EN.pdf?fileId=db3a30433ecb86d4013ed135270c1242
6EDL04N06PCX1SA1
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE CHIP
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 13V ~ 17.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: Chip
Rise / Fall Time (Typ): 60ns, 26ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT
Logic Voltage - VIL, VIH: 1.1V, 1.7V
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CYT2B97CACQ0AZSGS Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
CYT2B97CACQ0AZSGS
Виробник: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
на замовлення 590 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+916.89 грн
10+696.18 грн
60+614.98 грн
120+556.51 грн
300+534.74 грн
540+523.45 грн
В кошику  од. на суму  грн.
CYT2B97CACQ0AZEGS Infineon-CYT2B9_Datasheet_32-bit_Arm_Cortex-M4F_Microcontroller_TRAVEO_T2G_Family-AdditionalTechnicalInformation-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee9c191729c
CYT2B97CACQ0AZEGS
Виробник: Infineon Technologies
Description: IC MCU 32BT 2.0625MB FLSH 144QFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 2.0625MB (2.0625M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 72x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
на замовлення 550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+933.32 грн
10+709.21 грн
60+626.73 грн
120+567.21 грн
300+545.09 грн
540+533.63 грн
В кошику  од. на суму  грн.
CYT2BL7CAAQ0AZSGST infineon-cyt2bl-traveo-tm-t2g-32-bit-automotive-mcu-based-on-arm-r-cortex-r--m4f-single-datasheet-en.pdf
CYT2BL7CAAQ0AZSGST
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4.16MB FLSH 144LQFP
Packaging: Cut Tape (CT)
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 100MHz, 160MHz
Program Memory Size: 4.16MB (4.16M x 8)
RAM Size: 512K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 128K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 54x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, FIFO, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
Supplier Device Package: 144-LQFP (20x20)
Number of I/O: 122
DigiKey Programmable: Not Verified
на замовлення 570 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1183.67 грн
10+906.14 грн
25+847.86 грн
100+735.55 грн
В кошику  од. на суму  грн.
CYT3BB7CEBQ1AEEGS Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v09_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732
CYT3BB7CEBQ1AEEGS
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
на замовлення 595 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1495.04 грн
10+1153.47 грн
60+1028.91 грн
120+933.97 грн
300+900.58 грн
540+883.27 грн
В кошику  од. на суму  грн.
CYT4BB7CEBQ1AEEGS Infineon-TRAVEO_T2G_CYT3BB_4BB-DataSheet-v09_00-EN.pdf?fileId=5546d4627883d7e00178a73ba6ad1732
CYT4BB7CEBQ1AEEGS
Виробник: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 250MHz
Program Memory Size: 4.0625MB (4.0625M x 8)
RAM Size: 768K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 256K x 8
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
Data Converters: A/D 52x12b SAR
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
Supplier Device Package: 144-TEQFP (20x20)
Number of I/O: 116
на замовлення 594 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1608.48 грн
10+1244.09 грн
60+1111.28 грн
120+1009.18 грн
300+973.59 грн
540+955.14 грн
В кошику  од. на суму  грн.
IAUCN08S7L013ATMA1 Infineon-IAUCN08S7L013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e01978442d4b24458
IAUCN08S7L013ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 293A (Tj)
Rds On (Max) @ Id, Vgs: 1.26mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 2V @ 131µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9554 pF @ 40 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
IAUCN08S7L013ATMA1 Infineon-IAUCN08S7L013-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9715623e01978442d4b24458
IAUCN08S7L013ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 293A (Tj)
Rds On (Max) @ Id, Vgs: 1.26mOhm @ 88A, 10V
Power Dissipation (Max): 219W (Tc)
Vgs(th) (Max) @ Id: 2V @ 131µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 156 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9554 pF @ 40 V
Qualification: AEC-Q101
на замовлення 1249 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+325.45 грн
10+207.55 грн
100+147.07 грн
500+119.72 грн
В кошику  од. на суму  грн.
IAUCN04S7N010GATMA1 infineon-iaucn04s7n010g-datasheet-en.pdf
IAUCN04S7N010GATMA1
Виробник: Infineon Technologies
Description: IAUCN04S7N010GATMA1
Packaging: Tray
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 88A, 10V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 3V @ 50µA
Supplier Device Package: PG-THSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5026 pF @ 20 V
Qualification: AEC-Q101
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+174.46 грн
10+108.41 грн
100+74.39 грн
500+56.15 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUCN08S7N019TATMA1 Infineon-IAUCN08S7N019T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c96250806019642831bb47bcc
IAUCN08S7N019TATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.94mOhm @ 88A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 93.4µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6061 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+88.82 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUCN08S7N019TATMA1 Infineon-IAUCN08S7N019T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c96250806019642831bb47bcc
IAUCN08S7N019TATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.94mOhm @ 88A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 93.4µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6061 pF @ 40 V
Qualification: AEC-Q101
на замовлення 5779 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+262.86 грн
10+166.19 грн
100+116.76 грн
500+98.25 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IAUCN08S7N016TATMA1 Infineon-IAUCN08S7N016T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d785ac52e80
IAUCN08S7N016TATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 88A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-LHDSO-10-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7394 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+109.03 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
IAUCN08S7N016TATMA1 Infineon-IAUCN08S7N016T-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c9625080601963d785ac52e80
IAUCN08S7N016TATMA1
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.63mOhm @ 88A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 114µA
Supplier Device Package: PG-LHDSO-10-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7394 pF @ 40 V
Qualification: AEC-Q101
на замовлення 4918 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+305.89 грн
10+194.74 грн
100+138.11 грн
500+120.60 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
KP405XTMA1 Infineon-KP405-TPD-v01_00-EN.pdf
KP405XTMA1
Виробник: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.61PSI ~ 40.61PSI (38.7kPa ~ 280kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
В кошику  од. на суму  грн.
KP405XTMA1 Infineon-KP405-TPD-v01_00-EN.pdf
KP405XTMA1
Виробник: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.61PSI ~ 40.61PSI (38.7kPa ~ 280kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3399 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+366.13 грн
5+317.01 грн
10+303.75 грн
25+270.10 грн
50+259.89 грн
100+250.54 грн
500+227.90 грн
1000+220.99 грн
В кошику  од. на суму  грн.
BTS282ZE3180AATMA2 BTS282Z_DS_13.pdf?folderId=db3a3043163797a6011667aa084c0e01&fileId=db3a3043405f2978014071d29660203c&ack=t
BTS282ZE3180AATMA2
Виробник: Infineon Technologies
Description: MOSFET N-CH 49V 80A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 36A, 10V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 240µA
Supplier Device Package: PG-TO263-7-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 49 V
Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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S25FS064SAGMFI010 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SAGMFI010
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Verified
на замовлення 2262 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+163.51 грн
10+147.36 грн
25+143.17 грн
50+131.33 грн
100+128.30 грн
280+123.80 грн
560+118.81 грн
1120+115.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
S25FS064SAGMFI011 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SAGMFI011
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
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S25FS064SDSMFI010 Infineon-S25FS064S_64_Mbit_(8_Mbyte)_1.8-V_FS-S_Flash_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed526b25412&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FS064SDSMFI010
Виробник: Infineon Technologies
Description: IC FLASH 64MBIT SPI/QUAD 8SOIC
Packaging: Tray
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O, QPI
Memory Organization: 8M x 8
DigiKey Programmable: Not Verified
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+180.72 грн
10+162.57 грн
25+157.96 грн
50+144.89 грн
100+141.52 грн
Мінімальне замовлення: 2
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IRG4BC30KPBF description fundamentals-of-power-semiconductors
IRG4BC30KPBF
Виробник: Infineon Technologies
Description: IGBT 600V 28A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
Supplier Device Package: TO-220AB
Td (on/off) @ 25°C: 26ns/130ns
Switching Energy: 360µJ (on), 510µJ (off)
Test Condition: 480V, 16A, 23Ohm, 15V
Gate Charge: 67 nC
Current - Collector (Ic) (Max): 28 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 58 A
Power - Max: 100 W
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IRFZ46ZSTRLPBF infineon-irfz46z-datasheet-en.pdf
IRFZ46ZSTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V
Power Dissipation (Max): 82W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
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