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AUIRG4BC30U-S AUIRG4BC30U-S Infineon Technologies AUIRG4BC30U-S%28L%29.pdf Description: IGBT 600V 23A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 360µJ
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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AUIRG4BC30USTRL AUIRG4BC30USTRL Infineon Technologies AUIRG4BC30U-S%28L%29.pdf Description: IGBT 600V 23A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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CYPD7191-40LDXST CYPD7191-40LDXST Infineon Technologies Infineon-CYPD7191-40LDXS_EZ-PD_CCG7S_Automotive_single-port_USB_Type-C_with_PD_and_buck-boost_controller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c85ecb34701863803ba481a9e Description: TYPE-C - AUTO
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 13
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IRF7483MTRPBF IRF7483MTRPBF Infineon Technologies irf7483mpbf.pdf?fileId=5546d462533600a4015355ff98011c32 Description: MOSFET N-CH 40V 135A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
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IRF7483MTRPBF IRF7483MTRPBF Infineon Technologies irf7483mpbf.pdf?fileId=5546d462533600a4015355ff98011c32 Description: MOSFET N-CH 40V 135A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
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AUIRL3705N AUIRL3705N Infineon Technologies IRSDS11401-1.pdf?t.download=true&u=5oefqw Description: AUIRL3705 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
213+98.04 грн
Мінімальне замовлення: 213
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CY15B256J-SXAT CY15B256J-SXAT Infineon Technologies Infineon-CY15B256J_256_Kbit_(32K_8)_Automotive_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf69af49d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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CY15B256J-SXET CY15B256J-SXET Infineon Technologies Infineon-CY15B256J-SXE-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee624b26e3a Description: IC FRAM 256KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
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CY15B201QN-50SXET CY15B201QN-50SXET Infineon Technologies Infineon-CY15B201QN-50SXE_CY15B201QN-50SXET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85ecb34701864fd51d263d14 Description: IC FRAM 1MBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 128K x 8
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CY15B201QN-50SXE CY15B201QN-50SXE Infineon Technologies Infineon-CY15B201QN-50SXE_CY15B201QN-50SXET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85ecb34701864fd51d263d14 Description: IC FRAM 1MBIT SPI 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 128K x 8
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IRF7457PBF IRF7457PBF Infineon Technologies irf7457pbf.pdf?fileId=5546d462533600a4015355feb4521bf8 Description: MOSFET N-CH 20V 15A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V
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IRGS4064DPBF IRGS4064DPBF Infineon Technologies IRGS4064DPbF.pdf Description: IGBT TRENCH 600V 20A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.91V @ 15V, 10A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/79ns
Switching Energy: 29µJ (on), 200µJ (off)
Test Condition: 400V, 10A, 22Ohm, 15V
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 101 W
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IMZC120R022M2HXKSA1 IMZC120R022M2HXKSA1 Infineon Technologies IMZC120R022M2HXKSA1.pdf Description: IMZC120R022M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 18V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
на замовлення 148 шт:
термін постачання 21-31 дні (днів)
1+1117.80 грн
30+665.26 грн
120+594.00 грн
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IR2136JPBF IR2136JPBF Infineon Technologies IRSDS12169-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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DCDCSBCBOARDTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLE9273QX
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE9273QX
Secondary Attributes: On-Board LEDs
Embedded: No
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IR21531DPBF IR21531DPBF Infineon Technologies ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3 Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
на замовлення 16655 шт:
термін постачання 21-31 дні (днів)
2+231.82 грн
10+167.81 грн
50+145.50 грн
100+130.08 грн
250+123.23 грн
500+119.11 грн
1000+113.82 грн
2500+110.29 грн
5000+108.17 грн
Мінімальне замовлення: 2
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IR2301PBF IR2301PBF Infineon Technologies ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 8407 шт:
термін постачання 21-31 дні (днів)
123+170.31 грн
Мінімальне замовлення: 123
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IR2301PBF IR2301PBF Infineon Technologies ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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T2180N16TOFVTXPSA1 T2180N16TOFVTXPSA1 Infineon Technologies Infineon-T2180N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc201240b719a2f47ca Description: SCR MODULE 1.8KV 4460A DO-200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4460 A
Voltage - Off State: 1.8 kV
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F3L200R07W2S5FPB56BPSA1 F3L200R07W2S5FPB56BPSA1 Infineon Technologies Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
1+6268.57 грн
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ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1 Infineon Technologies ISA250300C04LMDSXTMA1.pdf Description: ISA250300C04LMDSXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc), 5.8A (Ta), 7.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V, 30mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1 Infineon Technologies ISA250300C04LMDSXTMA1.pdf Description: ISA250300C04LMDSXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc), 5.8A (Ta), 7.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V, 30mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
6+62.72 грн
10+37.77 грн
100+24.52 грн
Мінімальне замовлення: 6
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TPM9673FW2624RPIEBTOBO1 Infineon Technologies Description: TPM9673FW2624RPIEBTOBO1
Packaging: Box
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IR2181PBF IR2181PBF Infineon Technologies ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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IRFP450PBF IRFP450PBF Infineon Technologies 91233.pdf Description: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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XMC1302Q040X0016ABXTMA1 XMC1302Q040X0016ABXTMA1 Infineon Technologies Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6 Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 34
товару немає в наявності
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AUIRF3205 AUIRF3205 Infineon Technologies auirf3205.pdf?fileId=5546d462533600a4015355ac6c3e139f Description: AUIRF3205 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
на замовлення 31000 шт:
термін постачання 21-31 дні (днів)
161+130.52 грн
Мінімальне замовлення: 161
В кошику  од. на суму  грн.
IRFP460PBF IRFP460PBF Infineon Technologies 91237.pdf Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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AUIRFU8403 AUIRFU8403 Infineon Technologies IRSDS18588-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 40V 100A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: IPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
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IRFU7746PBF IRFU7746PBF Infineon Technologies irfr7746pbf.pdf?fileId=5546d462533600a401535635cbd72125 Description: MOSFET N-CH 75V 56A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V
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AUIRF1324STRL AUIRF1324STRL Infineon Technologies auirf1324s.pdf?fileId=5546d462533600a4015355a8b241136c Description: MOSFET N-CH 24V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
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IPA060N06NXKSA1 IPA060N06NXKSA1 Infineon Technologies DS_IPA060N06N_2_1.pdf?fileId=5546d46146d18cb40146f653200154cf Description: MOSFET N-CH 60V 45A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 45A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
на замовлення 9423 шт:
термін постачання 21-31 дні (днів)
305+69.10 грн
Мінімальне замовлення: 305
В кошику  од. на суму  грн.
BGAP3D30HE6327XUMA1 BGAP3D30HE6327XUMA1 Infineon Technologies Infineon-BGAP3D30H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b3b54a6e222a Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.1GHz ~ 4.2GHz
RF Type: 4G/5G, Cellular
Voltage - Supply: 4.75V ~ 5.25V
Gain: 40.1dB
Current - Supply: 315mA
Noise Figure: 3.3dB
P1dB: 31.4dBm
Supplier Device Package: PG-VQFN-24-20
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+212.22 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
BGAP3D30HE6327XUMA1 BGAP3D30HE6327XUMA1 Infineon Technologies Infineon-BGAP3D30H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b3b54a6e222a Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.1GHz ~ 4.2GHz
RF Type: 4G/5G, Cellular
Voltage - Supply: 4.75V ~ 5.25V
Gain: 40.1dB
Current - Supply: 315mA
Noise Figure: 3.3dB
P1dB: 31.4dBm
Supplier Device Package: PG-VQFN-24-20
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
1+351.69 грн
10+293.41 грн
25+277.48 грн
100+239.91 грн
250+227.62 грн
500+218.95 грн
1000+207.32 грн
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TLE92623BQXXUMA2 TLE92623BQXXUMA2 Infineon Technologies Infineon-TLE9262-3BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609785aa013951 Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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IRG8P25N120KDPBF IRG8P25N120KDPBF Infineon Technologies IRG8P25N120KD%28-E%29PbF.pdf Description: IGBT 1200V 40A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
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IRFHS8242TRPBF IRFHS8242TRPBF Infineon Technologies irfhs8242pbf.pdf?fileId=5546d462533600a401535623903b1f5d Description: MOSFET N-CH 25V 9.9A/21A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
4000+12.85 грн
Мінімальне замовлення: 4000
В кошику  од. на суму  грн.
IRFHS8242TRPBF IRFHS8242TRPBF Infineon Technologies irfhs8242pbf.pdf?fileId=5546d462533600a401535623903b1f5d Description: MOSFET N-CH 25V 9.9A/21A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
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IRFZ44NSTRRPBF IRFZ44NSTRRPBF Infineon Technologies irfz44nspbf.pdf?fileId=5546d462533600a40153563b43a5220f description Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
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AUIRFZ44N AUIRFZ44N Infineon Technologies AUIRFZ44N.pdf Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
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AUIRFZ44NS AUIRFZ44NS Infineon Technologies AUIRFZ44NS%2CNL.pdf Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
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IR4427PBF IR4427PBF Infineon Technologies ir4426.pdf?fileId=5546d462533600a4015355d60b491822 description Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
на замовлення 589 шт:
термін постачання 21-31 дні (днів)
2+193.71 грн
10+139.06 грн
50+120.13 грн
100+107.23 грн
250+101.41 грн
500+97.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IPA80R1K4CEXKSA1 IPA80R1K4CEXKSA1 Infineon Technologies Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43 Description: MOSFET N-CH 800V 2.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
на замовлення 134 шт:
термін постачання 21-31 дні (днів)
134+45.19 грн
Мінімальне замовлення: 134
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IPLK80R1K4P7ATMA1 IPLK80R1K4P7ATMA1 Infineon Technologies Infineon-IPLK80R1K4P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e10fd50223 Description: MOSFET 800V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
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IPLK80R1K4P7ATMA1 IPLK80R1K4P7ATMA1 Infineon Technologies Infineon-IPLK80R1K4P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e10fd50223 Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
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S25FL256SAGNFE003 S25FL256SAGNFE003 Infineon Technologies Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S25FL256SAGNFE000 S25FL256SAGNFE000 Infineon Technologies Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
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S26KS128SDPBHA020 S26KS128SDPBHA020 Infineon Technologies Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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IRG8P40N120KDPBF IRG8P40N120KDPBF Infineon Technologies IRG8P40N120KD%28-E%29PbF.pdf Description: IGBT 1200V 60A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 305 W
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AIKQB120N75CP2AKSA1 AIKQB120N75CP2AKSA1 Infineon Technologies Infineon-AIKQB120N75CP2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190b6c40b7773f2 Description: DISCRETE SWITCHES
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 71ns/244ns
Switching Energy: 6.82mJ (on), 3.8mJ (off)
Test Condition: 470V, 120A, 5Ohm, 15V
Gate Charge: 731 nC
Grade: Automotive
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 577 W
Qualification: AEC-Q101
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DDB2U50N08W1R_B23 DDB2U50N08W1R_B23 Infineon Technologies Infineon-DDB2U50N08W1R_B23-DS-v03_00-EN-219386.pdf Bridge Rectifiers Bridge Rectifier 600V
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
В кошику  од. на суму  грн.
BA 592 E6327 BA 592 E6327 Infineon Technologies ba592_ba892series-87652.pdf PIN Diodes PIN 35 V 100 mA
на замовлення 14807 шт:
термін постачання 21-30 дні (днів)
22+16.27 грн
36+9.62 грн
100+6.53 грн
500+6.24 грн
1000+5.94 грн
3000+5.50 грн
6000+5.28 грн
Мінімальне замовлення: 22
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BA595E6327HTSA1 Infineon Technologies Infineon-BA595_BA885_BA895SERIES-DS-v01_01-en-1226033.pdf PIN Diodes Silicon PIN Diode 50V 100mA
на замовлення 14327 шт:
термін постачання 21-30 дні (днів)
В кошику  од. на суму  грн.
BAR9002ELE6327XTMA1 BAR9002ELE6327XTMA1 Infineon Technologies Infineon_BAR90_02EL_DS_v01_00_EN-1840578.pdf PIN Diodes RF DIODES
на замовлення 21965 шт:
термін постачання 21-30 дні (днів)
28+12.24 грн
47+7.26 грн
100+4.62 грн
1000+4.40 грн
2500+3.96 грн
15000+3.60 грн
45000+3.52 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BAR 81W H6327 BAR 81W H6327 Infineon Technologies bar81series-60108.pdf PIN Diodes RF DIODE
на замовлення 7167 шт:
термін постачання 21-30 дні (днів)
10+35.02 грн
13+26.42 грн
25+21.06 грн
100+18.93 грн
250+17.98 грн
500+17.47 грн
1000+16.95 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BA 592 E6433 Infineon Technologies ba592_ba892series-87652.pdf PIN Diodes Silicon RF Switching Diode 35V 100mA
товару немає в наявності
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BAR 63-02V H6327 BAR 63-02V H6327 Infineon Technologies Infineon_BAR63SERIES_DS_DS_v01_01_EN-1225922.pdf PIN Diodes RF DIODE
на замовлення 821 шт:
термін постачання 21-30 дні (днів)
13+27.66 грн
17+20.00 грн
100+9.83 грн
500+6.61 грн
1000+4.99 грн
3000+4.33 грн
6000+3.82 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BA 595 E6327 Infineon Technologies Infineon-BA595_BA885_BA895SERIES-DS-v01_01-en-1226033.pdf PIN Diodes Silicon PIN Diode 50V 100mA
на замовлення 6730 шт:
термін постачання 21-30 дні (днів)
В кошику  од. на суму  грн.
BAR 64-04 E6327 BAR 64-04 E6327 Infineon Technologies Infineon_BAR64_04_DS_v01_01_EN-1840576.pdf PIN Diodes Silicon PIN Diode 150V 100mA
на замовлення 76346 шт:
термін постачання 21-30 дні (днів)
12+29.28 грн
16+21.52 грн
100+10.57 грн
500+7.12 грн
1000+5.36 грн
3000+4.62 грн
6000+4.11 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BAR 88-02V H6327 BAR 88-02V H6327 Infineon Technologies bar88series-86027.pdf PIN Diodes RF DIODE
на замовлення 3577 шт:
термін постачання 21-30 дні (днів)
8+42.81 грн
11+31.90 грн
100+17.32 грн
500+11.82 грн
Мінімальне замовлення: 8
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AUIRG4BC30U-S AUIRG4BC30U-S%28L%29.pdf
AUIRG4BC30U-S
Виробник: Infineon Technologies
Description: IGBT 600V 23A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 360µJ
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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AUIRG4BC30USTRL AUIRG4BC30U-S%28L%29.pdf
AUIRG4BC30USTRL
Виробник: Infineon Technologies
Description: IGBT 600V 23A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
товару немає в наявності
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CYPD7191-40LDXST Infineon-CYPD7191-40LDXS_EZ-PD_CCG7S_Automotive_single-port_USB_Type-C_with_PD_and_buck-boost_controller-DataSheet-v07_00-EN.pdf?fileId=8ac78c8c85ecb34701863803ba481a9e
CYPD7191-40LDXST
Виробник: Infineon Technologies
Description: TYPE-C - AUTO
Packaging: Cut Tape (CT)
Package / Case: 40-UFQFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Interface: I2C, SPI, UART, USB
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 4V ~ 24V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB), ROM (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 40-QFN (6x6)
Number of I/O: 13
товару немає в наявності
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IRF7483MTRPBF irf7483mpbf.pdf?fileId=5546d462533600a4015355ff98011c32
IRF7483MTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 135A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
товару немає в наявності
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IRF7483MTRPBF irf7483mpbf.pdf?fileId=5546d462533600a4015355ff98011c32
IRF7483MTRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 135A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 81A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3913 pF @ 25 V
товару немає в наявності
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AUIRL3705N IRSDS11401-1.pdf?t.download=true&u=5oefqw
AUIRL3705N
Виробник: Infineon Technologies
Description: AUIRL3705 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 46A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Qualification: AEC-Q101
на замовлення 600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
213+98.04 грн
Мінімальне замовлення: 213
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CY15B256J-SXAT Infineon-CY15B256J_256_Kbit_(32K_8)_Automotive_Serial_(I2C)_F_RAM-DataSheet-v10_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecf69af49d8&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY15B256J-SXAT
Виробник: Infineon Technologies
Description: IC FRAM 256KBIT I2C 3.4MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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CY15B256J-SXET Infineon-CY15B256J-SXE-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee624b26e3a
CY15B256J-SXET
Виробник: Infineon Technologies
Description: IC FRAM 256KBIT I2C 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 3.4 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: I2C
Access Time: 130 ns
Memory Organization: 32K x 8
товару немає в наявності
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CY15B201QN-50SXET Infineon-CY15B201QN-50SXE_CY15B201QN-50SXET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85ecb34701864fd51d263d14
CY15B201QN-50SXET
Виробник: Infineon Technologies
Description: IC FRAM 1MBIT SPI 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 128K x 8
товару немає в наявності
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CY15B201QN-50SXE Infineon-CY15B201QN-50SXE_CY15B201QN-50SXET-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c85ecb34701864fd51d263d14
CY15B201QN-50SXE
Виробник: Infineon Technologies
Description: IC FRAM 1MBIT SPI 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 128K x 8
товару немає в наявності
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IRF7457PBF irf7457pbf.pdf?fileId=5546d462533600a4015355feb4521bf8
IRF7457PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 20V 15A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 10 V
товару немає в наявності
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IRGS4064DPBF IRGS4064DPbF.pdf
IRGS4064DPBF
Виробник: Infineon Technologies
Description: IGBT TRENCH 600V 20A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 62 ns
Vce(on) (Max) @ Vge, Ic: 1.91V @ 15V, 10A
Supplier Device Package: D2PAK
IGBT Type: Trench
Td (on/off) @ 25°C: 27ns/79ns
Switching Energy: 29µJ (on), 200µJ (off)
Test Condition: 400V, 10A, 22Ohm, 15V
Gate Charge: 32 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 101 W
товару немає в наявності
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IMZC120R022M2HXKSA1 IMZC120R022M2HXKSA1.pdf
IMZC120R022M2HXKSA1
Виробник: Infineon Technologies
Description: IMZC120R022M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 32A, 18V
Power Dissipation (Max): 329W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 10.1mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 800 V
на замовлення 148 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1117.80 грн
30+665.26 грн
120+594.00 грн
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IR2136JPBF IRSDS12169-1.pdf?t.download=true&u=5oefqw
IR2136JPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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DCDCSBCBOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLE9273QX
Packaging: Bulk
Function: System Basis Chip (SBC)
Type: Interface
Contents: Board(s)
Utilized IC / Part: TLE9273QX
Secondary Attributes: On-Board LEDs
Embedded: No
товару немає в наявності
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IR21531DPBF ir21531.pdf?fileId=5546d462533600a4015355c8d26316b3
IR21531DPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 80ns, 45ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
DigiKey Programmable: Not Verified
на замовлення 16655 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+231.82 грн
10+167.81 грн
50+145.50 грн
100+130.08 грн
250+123.23 грн
500+119.11 грн
1000+113.82 грн
2500+110.29 грн
5000+108.17 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IR2301PBF ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc
IR2301PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 8407 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
123+170.31 грн
Мінімальне замовлення: 123
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IR2301PBF ir2301.pdf?fileId=5546d462533600a4015355c97bb216dc
IR2301PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HI/LOW SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 130ns, 50ns
Channel Type: Independent
Driven Configuration: High-Side or Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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T2180N16TOFVTXPSA1 Infineon-T2180N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc201240b719a2f47ca
T2180N16TOFVTXPSA1
Виробник: Infineon Technologies
Description: SCR MODULE 1.8KV 4460A DO-200AD
Packaging: Tray
Package / Case: DO-200AD
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 44000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 2180 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 4460 A
Voltage - Off State: 1.8 kV
товару немає в наявності
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F3L200R07W2S5FPB56BPSA1
F3L200R07W2S5FPB56BPSA1
Виробник: Infineon Technologies
Description: LOW POWER EASY AG-EASY2B-2
Packaging: Tray
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6268.57 грн
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ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1.pdf
ISA250300C04LMDSXTMA1
Виробник: Infineon Technologies
Description: ISA250300C04LMDSXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc), 5.8A (Ta), 7.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V, 30mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
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ISA250300C04LMDSXTMA1 ISA250300C04LMDSXTMA1.pdf
ISA250300C04LMDSXTMA1
Виробник: Infineon Technologies
Description: ISA250300C04LMDSXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W (Ta), 2.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), 7.9A (Tc), 5.8A (Ta), 7.8A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 20V
Rds On (Max) @ Id, Vgs: 25mOhm @ 7.9A, 10V, 30mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: PG-DSO-8-920
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+62.72 грн
10+37.77 грн
100+24.52 грн
Мінімальне замовлення: 6
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TPM9673FW2624RPIEBTOBO1
Виробник: Infineon Technologies
Description: TPM9673FW2624RPIEBTOBO1
Packaging: Box
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IR2181PBF ir2181.pdf?fileId=5546d462533600a4015355c93cdd16ce
IR2181PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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IRFP450PBF 91233.pdf
IRFP450PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 14A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
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XMC1302Q040X0016ABXTMA1 Infineon-xmc1300_AB-DataSheet-v02_01-EN.pdf?fileId=5546d4624a0bf290014a4bdb073c25c6
XMC1302Q040X0016ABXTMA1
Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 40-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 32MHz
Program Memory Size: 16KB (16K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-40-13
Number of I/O: 34
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AUIRF3205 auirf3205.pdf?fileId=5546d462533600a4015355ac6c3e139f
AUIRF3205
Виробник: Infineon Technologies
Description: AUIRF3205 - 55V-60V N-CHANNEL AU
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 62A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3247 pF @ 25 V
на замовлення 31000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
161+130.52 грн
Мінімальне замовлення: 161
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IRFP460PBF 91237.pdf
IRFP460PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 500V 20A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 12A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 25 V
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AUIRFU8403 IRSDS18588-1.pdf?t.download=true&u=5oefqw
AUIRFU8403
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 100A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 76A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: IPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3171 pF @ 25 V
Qualification: AEC-Q101
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IRFU7746PBF irfr7746pbf.pdf?fileId=5546d462533600a401535635cbd72125
IRFU7746PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 56A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 11.2mOhm @ 35A, 10V
Power Dissipation (Max): 99W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 100µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3107 pF @ 25 V
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AUIRF1324STRL auirf1324s.pdf?fileId=5546d462533600a4015355a8b241136c
AUIRF1324STRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 24V 195A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 24 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V
Qualification: AEC-Q101
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IPA060N06NXKSA1 DS_IPA060N06N_2_1.pdf?fileId=5546d46146d18cb40146f653200154cf
IPA060N06NXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 45A TO220-FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 45A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 36µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
на замовлення 9423 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
305+69.10 грн
Мінімальне замовлення: 305
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BGAP3D30HE6327XUMA1 Infineon-BGAP3D30H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b3b54a6e222a
BGAP3D30HE6327XUMA1
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.1GHz ~ 4.2GHz
RF Type: 4G/5G, Cellular
Voltage - Supply: 4.75V ~ 5.25V
Gain: 40.1dB
Current - Supply: 315mA
Noise Figure: 3.3dB
P1dB: 31.4dBm
Supplier Device Package: PG-VQFN-24-20
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+212.22 грн
Мінімальне замовлення: 6000
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BGAP3D30HE6327XUMA1 Infineon-BGAP3D30H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c92416ca50192b3b54a6e222a
BGAP3D30HE6327XUMA1
Виробник: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Frequency: 3.1GHz ~ 4.2GHz
RF Type: 4G/5G, Cellular
Voltage - Supply: 4.75V ~ 5.25V
Gain: 40.1dB
Current - Supply: 315mA
Noise Figure: 3.3dB
P1dB: 31.4dBm
Supplier Device Package: PG-VQFN-24-20
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+351.69 грн
10+293.41 грн
25+277.48 грн
100+239.91 грн
250+227.62 грн
500+218.95 грн
1000+207.32 грн
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TLE92623BQXXUMA2 Infineon-TLE9262-3BQX-DataSheet-v01_20-EN.pdf?fileId=5546d462602a9dc801609785aa013951
TLE92623BQXXUMA2
Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3V ~ 28V
Applications: System Basis Chip
Current - Supply: 3.5mA
Supplier Device Package: PG-VQFN-48-79
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IRG8P25N120KDPBF IRG8P25N120KD%28-E%29PbF.pdf
IRG8P25N120KDPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 40A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
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IRFHS8242TRPBF irfhs8242pbf.pdf?fileId=5546d462533600a401535623903b1f5d
IRFHS8242TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 9.9A/21A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4000+12.85 грн
Мінімальне замовлення: 4000
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IRFHS8242TRPBF irfhs8242pbf.pdf?fileId=5546d462533600a401535623903b1f5d
IRFHS8242TRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 25V 9.9A/21A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 653 pF @ 10 V
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
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IRFZ44NSTRRPBF description irfz44nspbf.pdf?fileId=5546d462533600a40153563b43a5220f
IRFZ44NSTRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
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AUIRFZ44N AUIRFZ44N.pdf
AUIRFZ44N
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 49A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
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AUIRFZ44NS AUIRFZ44NS%2CNL.pdf
AUIRFZ44NS
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 49A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V
Power Dissipation (Max): 3.8W (Ta), 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V
Qualification: AEC-Q101
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IR4427PBF description ir4426.pdf?fileId=5546d462533600a4015355d60b491822
IR4427PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR LOW-SIDE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 6V ~ 20V
Input Type: Non-Inverting
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 15ns, 10ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 2.3A, 3.3A
DigiKey Programmable: Not Verified
на замовлення 589 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+193.71 грн
10+139.06 грн
50+120.13 грн
100+107.23 грн
250+101.41 грн
500+97.90 грн
Мінімальне замовлення: 2
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IPA80R1K4CEXKSA1 Infineon-IPA80R1K4CE-DS-v02_00-EN.pdf?fileId=5546d46249be182c0149c788709b1e43
IPA80R1K4CEXKSA1
Виробник: Infineon Technologies
Description: MOSFET N-CH 800V 2.8A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2.3A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 240µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 100 V
на замовлення 134 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
134+45.19 грн
Мінімальне замовлення: 134
В кошику  од. на суму  грн.
IPLK80R1K4P7ATMA1 Infineon-IPLK80R1K4P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e10fd50223
IPLK80R1K4P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
товару немає в наявності
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IPLK80R1K4P7ATMA1 Infineon-IPLK80R1K4P7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c7ba0a117017ba1e10fd50223
IPLK80R1K4P7ATMA1
Виробник: Infineon Technologies
Description: MOSFET 800V TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-TDSON-8
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
товару немає в наявності
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S25FL256SAGNFE003
S25FL256SAGNFE003
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tape & Reel (TR)
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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S25FL256SAGNFE000 Infineon-S25FL128SS25FL256S_128_Mb_(16_MB)256_Mb_(32_MB)_3.0V_SPI_Flash_Memory-DataSheet-v20_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL256SAGNFE000
Виробник: Infineon Technologies
Description: IC FLASH 256MBIT SPI/QUAD 8WSON
Packaging: Tray
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON (6x8)
Write Cycle Time - Word, Page: 750µs
Memory Interface: SPI - Quad I/O
Access Time: 6.5 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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S26KS128SDPBHA020 Infineon-512-MB_(64_MB)_256-MB_(32_MB)_128-MB_(16_MB)_1.8_V_3.0_V_HYPERFLASH_FAMILY-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed5ca77559f&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integ
S26KS128SDPBHA020
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 166 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Grade: Automotive
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
товару немає в наявності
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IRG8P40N120KDPBF IRG8P40N120KD%28-E%29PbF.pdf
IRG8P40N120KDPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 60A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 40ns/245ns
Switching Energy: 1.6mJ (on), 1.8mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 305 W
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AIKQB120N75CP2AKSA1 Infineon-AIKQB120N75CP2-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c90530b3a0190b6c40b7773f2
AIKQB120N75CP2AKSA1
Виробник: Infineon Technologies
Description: DISCRETE SWITCHES
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 120A
Supplier Device Package: PG-TO247-3-51
Td (on/off) @ 25°C: 71ns/244ns
Switching Energy: 6.82mJ (on), 3.8mJ (off)
Test Condition: 470V, 120A, 5Ohm, 15V
Gate Charge: 731 nC
Grade: Automotive
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 360 A
Power - Max: 577 W
Qualification: AEC-Q101
товару немає в наявності
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DDB2U50N08W1R_B23 Infineon-DDB2U50N08W1R_B23-DS-v03_00-EN-219386.pdf
DDB2U50N08W1R_B23
Виробник: Infineon Technologies
Bridge Rectifiers Bridge Rectifier 600V
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
В кошику  од. на суму  грн.
BA 592 E6327 ba592_ba892series-87652.pdf
BA 592 E6327
Виробник: Infineon Technologies
PIN Diodes PIN 35 V 100 mA
на замовлення 14807 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
22+16.27 грн
36+9.62 грн
100+6.53 грн
500+6.24 грн
1000+5.94 грн
3000+5.50 грн
6000+5.28 грн
Мінімальне замовлення: 22
В кошику  од. на суму  грн.
BA595E6327HTSA1 Infineon-BA595_BA885_BA895SERIES-DS-v01_01-en-1226033.pdf
Виробник: Infineon Technologies
PIN Diodes Silicon PIN Diode 50V 100mA
на замовлення 14327 шт:
термін постачання 21-30 дні (днів)
В кошику  од. на суму  грн.
BAR9002ELE6327XTMA1 Infineon_BAR90_02EL_DS_v01_00_EN-1840578.pdf
BAR9002ELE6327XTMA1
Виробник: Infineon Technologies
PIN Diodes RF DIODES
на замовлення 21965 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
28+12.24 грн
47+7.26 грн
100+4.62 грн
1000+4.40 грн
2500+3.96 грн
15000+3.60 грн
45000+3.52 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
BAR 81W H6327 bar81series-60108.pdf
BAR 81W H6327
Виробник: Infineon Technologies
PIN Diodes RF DIODE
на замовлення 7167 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
10+35.02 грн
13+26.42 грн
25+21.06 грн
100+18.93 грн
250+17.98 грн
500+17.47 грн
1000+16.95 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
BA 592 E6433 ba592_ba892series-87652.pdf
Виробник: Infineon Technologies
PIN Diodes Silicon RF Switching Diode 35V 100mA
товару немає в наявності
В кошику  од. на суму  грн.
BAR 63-02V H6327 Infineon_BAR63SERIES_DS_DS_v01_01_EN-1225922.pdf
BAR 63-02V H6327
Виробник: Infineon Technologies
PIN Diodes RF DIODE
на замовлення 821 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
13+27.66 грн
17+20.00 грн
100+9.83 грн
500+6.61 грн
1000+4.99 грн
3000+4.33 грн
6000+3.82 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BA 595 E6327 Infineon-BA595_BA885_BA895SERIES-DS-v01_01-en-1226033.pdf
Виробник: Infineon Technologies
PIN Diodes Silicon PIN Diode 50V 100mA
на замовлення 6730 шт:
термін постачання 21-30 дні (днів)
В кошику  од. на суму  грн.
BAR 64-04 E6327 Infineon_BAR64_04_DS_v01_01_EN-1840576.pdf
BAR 64-04 E6327
Виробник: Infineon Technologies
PIN Diodes Silicon PIN Diode 150V 100mA
на замовлення 76346 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
12+29.28 грн
16+21.52 грн
100+10.57 грн
500+7.12 грн
1000+5.36 грн
3000+4.62 грн
6000+4.11 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
BAR 88-02V H6327 bar88series-86027.pdf
BAR 88-02V H6327
Виробник: Infineon Technologies
PIN Diodes RF DIODE
на замовлення 3577 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
8+42.81 грн
11+31.90 грн
100+17.32 грн
500+11.82 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
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