Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (126649) > Сторінка 775 з 2111
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
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KP467QXTMA1 | Infineon Technologies |
Description: KP467QXTMA1Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads, Exposed Pad Output Type: Digital Mounting Type: Surface Mount Output: 14 b Operating Pressure: 7.25PSI ~ 20.31PSI (50kPa ~ 140kPa) Pressure Type: Absolute Accuracy: ±0.435PSI (±3kPa) Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3V ~ 5.25V Applications: Board Mount Supplier Device Package: PG-DFN-8-1 Port Style: No Port Maximum Pressure: 87.02PSI (600kPa) Grade: Automotive Qualification: AEC-Q103-002 |
товару немає в наявності |
Мінімальне замовлення: 3400 шт В кошику од. на суму грн. | ||||||||||||||||
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KP467QXTMA1 | Infineon Technologies |
Description: KP467QXTMA1Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads, Exposed Pad Output Type: Digital Mounting Type: Surface Mount Output: 14 b Operating Pressure: 7.25PSI ~ 20.31PSI (50kPa ~ 140kPa) Pressure Type: Absolute Accuracy: ±0.435PSI (±3kPa) Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3V ~ 5.25V Applications: Board Mount Supplier Device Package: PG-DFN-8-1 Port Style: No Port Maximum Pressure: 87.02PSI (600kPa) Grade: Automotive Qualification: AEC-Q103-002 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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KP400XTMA1 | Infineon Technologies |
Description: INTEGRATED PRESSURE SENSPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads, Exposed Pad Output Type: Digital Mounting Type: Surface Mount Operating Pressure: 5.8PSI ~ 18.35PSI (40kPa ~ 126.5kPa) Pressure Type: Absolute Accuracy: ±1% Operating Temperature: -40°C ~ 90°C Voltage - Supply: 4.5V ~ 11V Applications: Board Mount, Industrial Automation Supplier Device Package: PG-DFN-8-1 Port Style: No Port Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3400 шт: термін постачання 21-31 дні (днів) |
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KP400XTMA1 | Infineon Technologies |
Description: INTEGRATED PRESSURE SENSPackaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Leads, Exposed Pad Output Type: Digital Mounting Type: Surface Mount Operating Pressure: 5.8PSI ~ 18.35PSI (40kPa ~ 126.5kPa) Pressure Type: Absolute Accuracy: ±1% Operating Temperature: -40°C ~ 90°C Voltage - Supply: 4.5V ~ 11V Applications: Board Mount, Industrial Automation Supplier Device Package: PG-DFN-8-1 Port Style: No Port Grade: Automotive Qualification: AEC-Q100 |
на замовлення 3400 шт: термін постачання 21-31 дні (днів) |
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FF450R45T3E4B5BPSA1 | Infineon Technologies |
Description: IGBT MOD 4.5KV 450A AG-XHP100-3Packaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 450A NTC Thermistor: No Supplier Device Package: AG-XHP100-3 IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 450 A Voltage - Collector Emitter Breakdown (Max): 4500 V Power - Max: 1500000 W Current - Collector Cutoff (Max): 5 mA Input Capacitance (Cies) @ Vce: 76600 pF @ 25 V |
на замовлення 6 шт: термін постачання 21-31 дні (днів) |
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DD450S45T3E4B5BPSA1 | Infineon Technologies |
Description: IGBT MODULEPackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Structure: Series Connection - SCR/Diode Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 4.5 kV |
на замовлення 4 шт: термін постачання 21-31 дні (днів) |
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IPT009N08NM6ATMA1 | Infineon Technologies |
Description: TRENCH 40<-<100VPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc) Rds On (Max) @ Id, Vgs: 0.95mOhm @ 150A, 10V Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 278µA Supplier Device Package: PG-HSOF-8-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V |
на замовлення 1131 шт: термін постачання 21-31 дні (днів) |
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AUIRF3205ZS | Infineon Technologies |
Description: MOSFET N-CH 55V 75A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IAUMN04S7N005GAUMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Packaging: Cut Tape (CT) Package / Case: 4-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tj) Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 3V @ 140µA Supplier Device Package: PG-HSOG-4-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IAUMN04S7N005GAUMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V)Package / Case: 4-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tj) Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 3V @ 140µA Supplier Device Package: PG-HSOG-4-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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ISC033N10NM8ATMA1 | Infineon Technologies |
Description: ISC033N10NM8ATMA1Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 3.33mOhm @ 25A, 15V Power Dissipation (Max): 3W (Ta), 179W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 63µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | ||||||||||||||||
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ISC033N10NM8ATMA1 | Infineon Technologies |
Description: ISC033N10NM8ATMA1Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 3.33mOhm @ 25A, 15V Power Dissipation (Max): 3W (Ta), 179W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 63µA Supplier Device Package: PG-TDSON-8 Drive Voltage (Max Rds On, Min Rds On): 8V, 15V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AUIRL3705ZS | Infineon Technologies |
Description: MOSFET N-CH 55V 75A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AUIRL3705ZSTRL | Infineon Technologies |
Description: MOSFET N-CH 55V 75A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IRGS6B60KTRLPBF | Infineon Technologies |
Description: IGBT NPT 600V 13A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Supplier Device Package: D2PAK IGBT Type: NPT Td (on/off) @ 25°C: 25ns/215ns Switching Energy: 110µJ (on), 135µJ (off) Test Condition: 400V, 5A, 100Ohm, 15V Gate Charge: 18.2 nC Current - Collector (Ic) (Max): 13 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 26 A Power - Max: 90 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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XMC1403Q064X0128AAXTMA1 | Infineon Technologies |
Description: XMC1000Packaging: Tape & Reel (TR) Package / Case: 64-VFQFN Exposed Pad Mounting Type: Surface Mount Speed: 48MHz Program Memory Size: 128KB (128K x 8) RAM Size: 16K x 8 Operating Temperature: -40°C ~ 105°C (TA) Oscillator Type: External, Internal Program Memory Type: FLASH Core Processor: ARM® Cortex®-M0 Data Converters: A/D 12x12b SAR Core Size: 32-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: CANbus, I2C, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT Supplier Device Package: PG-VQFN-64-6 Number of I/O: 48 |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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AUIRFB4610 | Infineon Technologies |
Description: MOSFET N-CH 100V 73A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-220AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IGK120B041SXTSA1 | Infineon Technologies |
Description: GANFET N-CH 40V 30A 16WLBGAPackaging: Tape & Reel (TR) Package / Case: 16-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V Power Dissipation (Max): 1.2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 3mA Supplier Device Package: SG-UFWLB-16-2 Drive Voltage (Max Rds On, Min Rds On): 5V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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IGK120B041SXTSA1 | Infineon Technologies |
Description: GANFET N-CH 40V 30A 16WLBGAPackaging: Cut Tape (CT) Package / Case: 16-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V Power Dissipation (Max): 1.2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 3mA Supplier Device Package: SG-UFWLB-16-2 Drive Voltage (Max Rds On, Min Rds On): 5V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V |
на замовлення 3620 шт: термін постачання 21-31 дні (днів) |
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IGK048B041SXTSA1 | Infineon Technologies |
Description: GANFET N-CH 40V 53A 16WLBGAPackaging: Tape & Reel (TR) Package / Case: 16-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V Power Dissipation (Max): 1.7W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 3mA Supplier Device Package: SG-UFWLB-16-2 Drive Voltage (Max Rds On, Min Rds On): 5V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V |
товару немає в наявності |
Мінімальне замовлення: 4000 шт В кошику од. на суму грн. | ||||||||||||||||
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IGK048B041SXTSA1 | Infineon Technologies |
Description: GANFET N-CH 40V 53A 16WLBGAPackaging: Cut Tape (CT) Package / Case: 16-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V Power Dissipation (Max): 1.7W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 2.9V @ 3mA Supplier Device Package: SG-UFWLB-16-2 Drive Voltage (Max Rds On, Min Rds On): 5V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V |
на замовлення 3929 шт: термін постачання 21-31 дні (днів) |
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IRG4PC30FPBF | Infineon Technologies |
Description: IGBT 600V 31A TO-247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 21ns/200ns Switching Energy: 230µJ (on), 1.18mJ (off) Test Condition: 480V, 17A, 23Ohm, 15V Gate Charge: 51 nC Current - Collector (Ic) (Max): 31 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 100 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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AIMDQ75R033M2HXTMA1 | Infineon Technologies |
Description: AIMDQ75R033M2HXTMA1Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 5.9mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 750 шт В кошику од. на суму грн. | ||||||||||||||||
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AIMDQ75R033M2HXTMA1 | Infineon Technologies |
Description: AIMDQ75R033M2HXTMA1Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 5.6V @ 5.9mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V, 20V Vgs (Max): +23V, -7V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V Qualification: AEC-Q101 |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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IRG8P60N120KD-EPBF | Infineon Technologies |
Description: IGBT 1200V 100A TO-247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 210 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 40ns/240ns Switching Energy: 2.8mJ (on), 2.3mJ (off) Test Condition: 600V, 40A, 5Ohm, 15V Gate Charge: 345 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 420 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BTH62001ENAXUMA1 | Infineon Technologies |
Description: FOR 48 V BOARD NETS Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 200mOhm Input Type: Non-Inverting Voltage - Load: 8V ~ 60V Voltage - Supply (Vcc/Vdd): 8V ~ 60V Current - Output (Max): 1.7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-8-31 Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | |||||||||||||||||
| BTH62001ENAXUMA1 | Infineon Technologies |
Description: FOR 48 V BOARD NETS Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 200mOhm Input Type: Non-Inverting Voltage - Load: 8V ~ 60V Voltage - Supply (Vcc/Vdd): 8V ~ 60V Current - Output (Max): 1.7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-8-31 Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BTH62001ENAXUMA1 | Infineon Technologies |
Description: FOR 48 V BOARD NETS Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 1 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 200mOhm Input Type: Non-Inverting Voltage - Load: 8V ~ 60V Voltage - Supply (Vcc/Vdd): 8V ~ 60V Current - Output (Max): 1.7A Ratio - Input:Output: 1:1 Supplier Device Package: PG-TDSO-8-31 Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BTH62004ESAXUMA1 | Infineon Technologies |
Description: FOR 48 V BOARD NETSPackaging: Tape & Reel (TR) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 200mOhm Input Type: Non-Inverting Voltage - Load: 8V ~ 60V Voltage - Supply (Vcc/Vdd): 8V ~ 60V Current - Output (Max): 1A Ratio - Input:Output: 4 x 1:1 Supplier Device Package: PG-TSDSO-24-21 Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO Grade: Automotive Qualification: AEC-Q100 |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. | ||||||||||||||||
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BTH62004ESAXUMA1 | Infineon Technologies |
Description: FOR 48 V BOARD NETSPackaging: Cut Tape (CT) Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad Output Type: N-Channel Mounting Type: Surface Mount Number of Outputs: 4 Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 200mOhm Input Type: Non-Inverting Voltage - Load: 8V ~ 60V Voltage - Supply (Vcc/Vdd): 8V ~ 60V Current - Output (Max): 1A Ratio - Input:Output: 4 x 1:1 Supplier Device Package: PG-TSDSO-24-21 Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO Grade: Automotive Qualification: AEC-Q100 |
на замовлення 2955 шт: термін постачання 21-31 дні (днів) |
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1ED2147S65FXUMA1 | Infineon Technologies |
Description: 1ED2147S65FXUMA1Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 7.2V ~ 22V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 12ns, 12ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: SiC MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 4A, 4A |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||||||
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1ED2147S65FXUMA1 | Infineon Technologies |
Description: 1ED2147S65FXUMA1Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Voltage - Supply: 7.2V ~ 22V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8 Rise / Fall Time (Typ): 12ns, 12ns Channel Type: Single Driven Configuration: High-Side Number of Drivers: 1 Gate Type: SiC MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.4V Current - Peak Output (Source, Sink): 4A, 4A |
на замовлення 2384 шт: термін постачання 21-31 дні (днів) |
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IPD052N10NF2SATMA1 | Infineon Technologies |
Description: MOSFETPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 118A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 84µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
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IPD052N10NF2SATMA1 | Infineon Technologies |
Description: MOSFETPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 118A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V Power Dissipation (Max): 3W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 84µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V |
на замовлення 3432 шт: термін постачання 21-31 дні (днів) |
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IR2106PBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-PDIP Rise / Fall Time (Typ): 150ns, 50ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.9V Current - Peak Output (Source, Sink): 200mA, 350mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IPP076N15N5XKSA1 | Infineon Technologies |
Description: TRENCH >=100VPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 112A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 56A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 160µA Supplier Device Package: PG-TO220-3-1 Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V |
на замовлення 691 шт: термін постачання 21-31 дні (днів) |
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| SLB9672VU20FW1524XTMA1 | Infineon Technologies |
Description: SLB9672VU20FW1524XTMA1 EDGE SECU Packaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V Controller Series: OPTIGA™ TPM Program Memory Type: NVM (51kB) Applications: Trusted Platform Module (TPM) Core Processor: 32-Bit Supplier Device Package: PG-UQFN-32-1 Number of I/O: 3 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. | |||||||||||||||||
| SLB9672VU20FW1524XTMA1 | Infineon Technologies |
Description: SLB9672VU20FW1524XTMA1 EDGE SECU Packaging: Cut Tape (CT) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: SPI Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V Controller Series: OPTIGA™ TPM Program Memory Type: NVM (51kB) Applications: Trusted Platform Module (TPM) Core Processor: 32-Bit Supplier Device Package: PG-UQFN-32-1 Number of I/O: 3 |
на замовлення 4755 шт: термін постачання 21-31 дні (днів) |
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TPM9672FW1624RPIEBTOBO1 | Infineon Technologies |
Description: TPM9672FW1624RPIEBTOBO1Packaging: Box |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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TPM9672FW1524PCEBTOBO1 | Infineon Technologies |
Description: TPM9672FW1524PCEBTOBO1Packaging: Box |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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EVAL5AR0680AG144W1TOBO1 | Infineon Technologies |
Description: EVAL5AR0680AG144W1TOBO1Packaging: Box Voltage - Output: 12V Voltage - Input: 85 ~ 300 VAC Current - Output: 3.67A Contents: Board(s) Regulator Topology: Flyback Utilized IC / Part: ICE5AR0680AG-1 Main Purpose: AC/DC Converter Outputs and Type: 1 Isolated Output |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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IDH10G65C5ZXKSA1 | Infineon Technologies |
Description: DIODE SIL CARB 650V 10A PGTO220Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PG-TO220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 180 µA @ 650 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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TLE95633QXWXUMA1 | Infineon Technologies |
Description: BLDC_MOTOR_CONTROLPackaging: Tape & Reel (TR) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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TLE95633QXWXUMA1 | Infineon Technologies |
Description: BLDC_MOTOR_CONTROLPackaging: Cut Tape (CT) |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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S26KS256SDGBHV030 | Infineon Technologies |
Description: IC FLASH 256MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Memory Interface: HyperBus Access Time: 96 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
на замовлення 225 шт: термін постачання 21-31 дні (днів) |
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S26KS128SDGBHV030 | Infineon Technologies |
Description: IC FLASH 128MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 128Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Memory Interface: HyperBus Access Time: 96 ns Memory Organization: 16M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | ||||||||||||||||
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S26KL256SDABHV030 | Infineon Technologies |
Description: IC FLASH 256MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NOR Clock Frequency: 100 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Memory Interface: HyperBus Access Time: 96 ns Memory Organization: 32M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | ||||||||||||||||
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S26KS512SDGBHV030 | Infineon Technologies |
Description: IC FLASH 512MBIT HYPERBUS 24FBGAPackaging: Tray Package / Case: 24-VBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: FLASH - NOR Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-FBGA (6x8) Memory Interface: HyperBus Access Time: 96 ns Memory Organization: 64M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1690 шт В кошику од. на суму грн. | ||||||||||||||||
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CY8CTMA884LTI-13T | Infineon Technologies |
Description: IC TRUETOUCH CAPSENSE QFNPackaging: Cut Tape (CT) Package / Case: 88-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 88-QFN (10x10) DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| XC2080M104F80LRABKXUMA1 | Infineon Technologies |
Description: IC MCU 16BIT FLASH Packaging: Tape & Reel (TR) DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||||||
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BCR321UE6327HTSA1 | Infineon Technologies |
Description: IC LED DRVR LINEAR 250MA SC74-6Packaging: Bulk Package / Case: SC-74, SOT-457 Voltage - Output: 16V Mounting Type: Surface Mount Number of Outputs: 1 Frequency: 10kHz Type: Linear Applications: Lighting, Signage Current - Output / Channel: 250mA Internal Switch(s): Yes Supplier Device Package: PG-SC74-6 Voltage - Supply (Max): 25V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 40250 шт: термін постачання 21-31 дні (днів) |
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| AIKWH15N120CS7XKSA1 | Infineon Technologies |
Description: 1200 V TRENCHSTOP IGBT 7 TECHNOLPackaging: Tube |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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AIKZH15N120CS7XKSA1 | Infineon Technologies |
Description: 1200 V TRENCHSTOP IGBT 7 TECHNOLPackaging: Tube |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
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SPS04N60C3BKMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 4.5A TO251-3Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 200µA Supplier Device Package: PG-TO251-3-11 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
на замовлення 14621 шт: термін постачання 21-31 дні (днів) |
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SGP04N60XKSA1 | Infineon Technologies |
Description: IGBT NPT 600V 9.4A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A Supplier Device Package: PG-TO220-3-1 IGBT Type: NPT Td (on/off) @ 25°C: 22ns/237ns Switching Energy: 131µJ Test Condition: 400V, 4A, 67Ohm, 15V Gate Charge: 24 nC Current - Collector (Ic) (Max): 9.4 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 19 A Power - Max: 50 W |
на замовлення 7998 шт: термін постачання 21-31 дні (днів) |
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IRS2453DSPBF | Infineon Technologies |
Description: IC GATE DRVR FULL-BRIDGE 14SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -25°C ~ 125°C (TJ) Voltage - Supply: 10V ~ 15.6V Input Type: RC Input Circuit High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-SOIC Rise / Fall Time (Typ): 120ns, 50ns Channel Type: Synchronous Driven Configuration: Full-Bridge Number of Drivers: 1 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 4.7V, 9.3V Current - Peak Output (Source, Sink): 180mA, 260mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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IR21363STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 28SOICPackaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 12V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 125ns, 50ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 200mA, 350mA DigiKey Programmable: Not Verified |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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IR21363STRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 28SOICPackaging: Cut Tape (CT) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 12V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 125ns, 50ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 200mA, 350mA DigiKey Programmable: Not Verified |
на замовлення 566 шт: термін постачання 21-31 дні (днів) |
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IR2136JTRPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 44PLCCPackaging: Tape & Reel (TR) Package / Case: 44-LCC (J-Lead), 32 Leads Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58) Rise / Fall Time (Typ): 125ns, 50ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 3V Current - Peak Output (Source, Sink): 200mA, 350mA DigiKey Programmable: Not Verified |
на замовлення 500 шт: термін постачання 21-31 дні (днів) |
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IRS2332SPBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 28SOICPackaging: Tube Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 80ns, 35ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.2V Current - Peak Output (Source, Sink): 250mA, 500mA DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. |
| KP467QXTMA1 |
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Виробник: Infineon Technologies
Description: KP467QXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 7.25PSI ~ 20.31PSI (50kPa ~ 140kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
Description: KP467QXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 7.25PSI ~ 20.31PSI (50kPa ~ 140kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
товару немає в наявності
Мінімальне замовлення: 3400 шт
В кошику
од. на суму грн.
| KP467QXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: KP467QXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 7.25PSI ~ 20.31PSI (50kPa ~ 140kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
Description: KP467QXTMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Output: 14 b
Operating Pressure: 7.25PSI ~ 20.31PSI (50kPa ~ 140kPa)
Pressure Type: Absolute
Accuracy: ±0.435PSI (±3kPa)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 5.25V
Applications: Board Mount
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Maximum Pressure: 87.02PSI (600kPa)
Grade: Automotive
Qualification: AEC-Q103-002
товару немає в наявності
В кошику
од. на суму грн.
| KP400XTMA1 |
![]() |
Виробник: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.8PSI ~ 18.35PSI (40kPa ~ 126.5kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 90°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
Description: INTEGRATED PRESSURE SENS
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.8PSI ~ 18.35PSI (40kPa ~ 126.5kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 90°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3400+ | 248.07 грн |
| KP400XTMA1 |
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Виробник: Infineon Technologies
Description: INTEGRATED PRESSURE SENS
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.8PSI ~ 18.35PSI (40kPa ~ 126.5kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 90°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
Description: INTEGRATED PRESSURE SENS
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads, Exposed Pad
Output Type: Digital
Mounting Type: Surface Mount
Operating Pressure: 5.8PSI ~ 18.35PSI (40kPa ~ 126.5kPa)
Pressure Type: Absolute
Accuracy: ±1%
Operating Temperature: -40°C ~ 90°C
Voltage - Supply: 4.5V ~ 11V
Applications: Board Mount, Industrial Automation
Supplier Device Package: PG-DFN-8-1
Port Style: No Port
Grade: Automotive
Qualification: AEC-Q100
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 384.85 грн |
| 5+ | 332.56 грн |
| 10+ | 318.52 грн |
| 25+ | 283.25 грн |
| 50+ | 272.55 грн |
| 100+ | 262.76 грн |
| 500+ | 239.06 грн |
| 1000+ | 231.84 грн |
| FF450R45T3E4B5BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MOD 4.5KV 450A AG-XHP100-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Power - Max: 1500000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 76600 pF @ 25 V
Description: IGBT MOD 4.5KV 450A AG-XHP100-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 450A
NTC Thermistor: No
Supplier Device Package: AG-XHP100-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 450 A
Voltage - Collector Emitter Breakdown (Max): 4500 V
Power - Max: 1500000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 76600 pF @ 25 V
на замовлення 6 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 100749.18 грн |
| DD450S45T3E4B5BPSA1 |
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Виробник: Infineon Technologies
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 4.5 kV
Description: IGBT MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Structure: Series Connection - SCR/Diode
Number of SCRs, Diodes: 1 SCR, 1 Diode
Voltage - Off State: 4.5 kV
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 80598.88 грн |
| IPT009N08NM6ATMA1 |
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Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 278µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 425A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 150A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 278µA
Supplier Device Package: PG-HSOF-8-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 186 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
на замовлення 1131 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 697.60 грн |
| 10+ | 460.87 грн |
| 50+ | 370.80 грн |
| 100+ | 326.50 грн |
| AUIRF3205ZS |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 66A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3450 pF @ 25 V
Qualification: AEC-Q101
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| IAUMN04S7N005GAUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3V @ 140µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3V @ 140µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 224.17 грн |
| 10+ | 162.58 грн |
| 25+ | 149.15 грн |
| 100+ | 126.08 грн |
| 250+ | 119.47 грн |
| 500+ | 115.48 грн |
| 1000+ | 110.36 грн |
| IAUMN04S7N005GAUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3V @ 140µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tj)
Rds On (Max) @ Id, Vgs: 0.5mOhm @ 125A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 3V @ 140µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12674 pF @ 20 V
Qualification: AEC-Q101
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| ISC033N10NM8ATMA1 |
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Виробник: Infineon Technologies
Description: ISC033N10NM8ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.33mOhm @ 25A, 15V
Power Dissipation (Max): 3W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 63µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
Description: ISC033N10NM8ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.33mOhm @ 25A, 15V
Power Dissipation (Max): 3W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 63µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
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Мінімальне замовлення: 5000 шт
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| ISC033N10NM8ATMA1 |
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Виробник: Infineon Technologies
Description: ISC033N10NM8ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.33mOhm @ 25A, 15V
Power Dissipation (Max): 3W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 63µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
Description: ISC033N10NM8ATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 3.33mOhm @ 25A, 15V
Power Dissipation (Max): 3W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 63µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4900 pF @ 50 V
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| AUIRL3705ZS |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
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| AUIRL3705ZSTRL |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 52A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V
Qualification: AEC-Q101
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| IRGS6B60KTRLPBF |
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Виробник: Infineon Technologies
Description: IGBT NPT 600V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
Description: IGBT NPT 600V 13A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
Supplier Device Package: D2PAK
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/215ns
Switching Energy: 110µJ (on), 135µJ (off)
Test Condition: 400V, 5A, 100Ohm, 15V
Gate Charge: 18.2 nC
Current - Collector (Ic) (Max): 13 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 26 A
Power - Max: 90 W
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| XMC1403Q064X0128AAXTMA1 |
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Виробник: Infineon Technologies
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
Description: XMC1000
Packaging: Tape & Reel (TR)
Package / Case: 64-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 16K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 12x12b SAR
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: CANbus, I2C, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
Supplier Device Package: PG-VQFN-64-6
Number of I/O: 48
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Мінімальне замовлення: 2500 шт
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| AUIRFB4610 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 73A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 73A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 44A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 50 V
Qualification: AEC-Q101
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| IGK120B041SXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 40V 30A 16WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V
Power Dissipation (Max): 1.2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V
Description: GANFET N-CH 40V 30A 16WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V
Power Dissipation (Max): 1.2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V
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Мінімальне замовлення: 4000 шт
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| IGK120B041SXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 40V 30A 16WLBGA
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V
Power Dissipation (Max): 1.2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V
Description: GANFET N-CH 40V 30A 16WLBGA
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 5A, 5V
Power Dissipation (Max): 1.2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 4.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 20 V
на замовлення 3620 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.44 грн |
| 10+ | 51.78 грн |
| 50+ | 38.39 грн |
| 100+ | 31.95 грн |
| 500+ | 24.79 грн |
| IGK048B041SXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 40V 53A 16WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V
Power Dissipation (Max): 1.7W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
Description: GANFET N-CH 40V 53A 16WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V
Power Dissipation (Max): 1.7W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
товару немає в наявності
Мінімальне замовлення: 4000 шт
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| IGK048B041SXTSA1 |
![]() |
Виробник: Infineon Technologies
Description: GANFET N-CH 40V 53A 16WLBGA
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V
Power Dissipation (Max): 1.7W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
Description: GANFET N-CH 40V 53A 16WLBGA
Packaging: Cut Tape (CT)
Package / Case: 16-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 5A, 5V
Power Dissipation (Max): 1.7W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.9V @ 3mA
Supplier Device Package: SG-UFWLB-16-2
Drive Voltage (Max Rds On, Min Rds On): 5V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 20 V
на замовлення 3929 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 159.11 грн |
| 10+ | 97.90 грн |
| 50+ | 74.07 грн |
| 100+ | 62.31 грн |
| 500+ | 49.66 грн |
| IRG4PC30FPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 600V 31A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
Description: IGBT 600V 31A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 21ns/200ns
Switching Energy: 230µJ (on), 1.18mJ (off)
Test Condition: 480V, 17A, 23Ohm, 15V
Gate Charge: 51 nC
Current - Collector (Ic) (Max): 31 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 100 W
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| AIMDQ75R033M2HXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: AIMDQ75R033M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.9mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V
Qualification: AEC-Q101
Description: AIMDQ75R033M2HXTMA1
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.9mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V
Qualification: AEC-Q101
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Мінімальне замовлення: 750 шт
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| AIMDQ75R033M2HXTMA1 |
![]() |
Виробник: Infineon Technologies
Description: AIMDQ75R033M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.9mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V
Qualification: AEC-Q101
Description: AIMDQ75R033M2HXTMA1
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 27A, 20V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 5.6V @ 5.9mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 20V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 500 V
Qualification: AEC-Q101
на замовлення 100 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 812.03 грн |
| 10+ | 542.09 грн |
| 100+ | 428.56 грн |
| IRG8P60N120KD-EPBF |
![]() |
Виробник: Infineon Technologies
Description: IGBT 1200V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 2.8mJ (on), 2.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 345 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 420 W
Description: IGBT 1200V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 210 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 40ns/240ns
Switching Energy: 2.8mJ (on), 2.3mJ (off)
Test Condition: 600V, 40A, 5Ohm, 15V
Gate Charge: 345 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 420 W
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| BTH62001ENAXUMA1 |
Виробник: Infineon Technologies
Description: FOR 48 V BOARD NETS
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: FOR 48 V BOARD NETS
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BTH62001ENAXUMA1 |
Виробник: Infineon Technologies
Description: FOR 48 V BOARD NETS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: FOR 48 V BOARD NETS
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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од. на суму грн.
| BTH62001ENAXUMA1 |
Виробник: Infineon Technologies
Description: FOR 48 V BOARD NETS
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: FOR 48 V BOARD NETS
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1.7A
Ratio - Input:Output: 1:1
Supplier Device Package: PG-TDSO-8-31
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
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| BTH62004ESAXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: FOR 48 V BOARD NETS
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1A
Ratio - Input:Output: 4 x 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: FOR 48 V BOARD NETS
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1A
Ratio - Input:Output: 4 x 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| BTH62004ESAXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: FOR 48 V BOARD NETS
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1A
Ratio - Input:Output: 4 x 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
Description: FOR 48 V BOARD NETS
Packaging: Cut Tape (CT)
Package / Case: 24-TSSOP (0.154", 3.90mm Width) Exposed Pad
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Switch Type: General Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: High Side
Rds On (Typ): 200mOhm
Input Type: Non-Inverting
Voltage - Load: 8V ~ 60V
Voltage - Supply (Vcc/Vdd): 8V ~ 60V
Current - Output (Max): 1A
Ratio - Input:Output: 4 x 1:1
Supplier Device Package: PG-TSDSO-24-21
Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, UVLO
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2955 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 235.93 грн |
| 10+ | 170.96 грн |
| 25+ | 156.93 грн |
| 100+ | 132.78 грн |
| 250+ | 125.87 грн |
| 500+ | 121.71 грн |
| 1000+ | 116.34 грн |
| 1ED2147S65FXUMA1 |
![]() |
Виробник: Infineon Technologies
Description: 1ED2147S65FXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.2V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
Description: 1ED2147S65FXUMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.2V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
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| 1ED2147S65FXUMA1 |
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Виробник: Infineon Technologies
Description: 1ED2147S65FXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.2V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
Description: 1ED2147S65FXUMA1
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 7.2V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-8
Rise / Fall Time (Typ): 12ns, 12ns
Channel Type: Single
Driven Configuration: High-Side
Number of Drivers: 1
Gate Type: SiC MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
на замовлення 2384 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 108.17 грн |
| 10+ | 76.31 грн |
| 25+ | 69.26 грн |
| 100+ | 57.74 грн |
| 250+ | 54.27 грн |
| 500+ | 52.19 грн |
| 1000+ | 50.87 грн |
| IPD052N10NF2SATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 118A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 118A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2000+ | 55.84 грн |
| IPD052N10NF2SATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 118A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 118A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 70A, 10V
Power Dissipation (Max): 3W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 84µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
на замовлення 3432 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 184.98 грн |
| 10+ | 114.65 грн |
| 50+ | 87.25 грн |
| 100+ | 73.60 грн |
| 500+ | 59.06 грн |
| IR2106PBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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| IPP076N15N5XKSA1 |
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Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 56A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 160µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 112A (Tc)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 56A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 160µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 75 V
на замовлення 691 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 260.23 грн |
| 50+ | 126.88 грн |
| 100+ | 114.83 грн |
| 500+ | 87.97 грн |
| SLB9672VU20FW1524XTMA1 |
Виробник: Infineon Technologies
Description: SLB9672VU20FW1524XTMA1 EDGE SECU
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
Description: SLB9672VU20FW1524XTMA1 EDGE SECU
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
товару немає в наявності
Мінімальне замовлення: 5000 шт
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од. на суму грн.
| SLB9672VU20FW1524XTMA1 |
Виробник: Infineon Technologies
Description: SLB9672VU20FW1524XTMA1 EDGE SECU
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
Description: SLB9672VU20FW1524XTMA1 EDGE SECU
Packaging: Cut Tape (CT)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: SPI
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V, 3V ~ 3.6V
Controller Series: OPTIGA™ TPM
Program Memory Type: NVM (51kB)
Applications: Trusted Platform Module (TPM)
Core Processor: 32-Bit
Supplier Device Package: PG-UQFN-32-1
Number of I/O: 3
на замовлення 4755 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 266.50 грн |
| 10+ | 193.15 грн |
| 50+ | 167.80 грн |
| 100+ | 150.10 грн |
| 500+ | 137.62 грн |
| TPM9672FW1624RPIEBTOBO1 |
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на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 4847.11 грн |
| EVAL5AR0680AG144W1TOBO1 |
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Виробник: Infineon Technologies
Description: EVAL5AR0680AG144W1TOBO1
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 85 ~ 300 VAC
Current - Output: 3.67A
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE5AR0680AG-1
Main Purpose: AC/DC Converter
Outputs and Type: 1 Isolated Output
Description: EVAL5AR0680AG144W1TOBO1
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 85 ~ 300 VAC
Current - Output: 3.67A
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE5AR0680AG-1
Main Purpose: AC/DC Converter
Outputs and Type: 1 Isolated Output
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 7520.70 грн |
| IDH10G65C5ZXKSA1 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 10A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
Description: DIODE SIL CARB 650V 10A PGTO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 180 µA @ 650 V
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| TLE95633QXWXUMA1 |
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на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 184.73 грн |
| TLE95633QXWXUMA1 |
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на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 337.04 грн |
| 10+ | 246.21 грн |
| 25+ | 226.56 грн |
| 100+ | 192.31 грн |
| 250+ | 182.64 грн |
| 500+ | 176.81 грн |
| 1000+ | 169.19 грн |
| S26KS256SDGBHV030 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
на замовлення 225 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1039.34 грн |
| 10+ | 791.47 грн |
| 25+ | 739.24 грн |
| 100+ | 664.77 грн |
| S26KS128SDGBHV030 |
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Виробник: Infineon Technologies
Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 128MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1690 шт
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| S26KL256SDABHV030 |
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Виробник: Infineon Technologies
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 256MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 100 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 32M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1690 шт
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| S26KS512SDGBHV030 |
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Виробник: Infineon Technologies
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 512MBIT HYPERBUS 24FBGA
Packaging: Tray
Package / Case: 24-VBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: FLASH - NOR
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-FBGA (6x8)
Memory Interface: HyperBus
Access Time: 96 ns
Memory Organization: 64M x 8
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1690 шт
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| CY8CTMA884LTI-13T |
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Виробник: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE QFN
Packaging: Cut Tape (CT)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 88-QFN (10x10)
DigiKey Programmable: Not Verified
Description: IC TRUETOUCH CAPSENSE QFN
Packaging: Cut Tape (CT)
Package / Case: 88-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 88-QFN (10x10)
DigiKey Programmable: Not Verified
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| XC2080M104F80LRABKXUMA1 |
Виробник: Infineon Technologies
Description: IC MCU 16BIT FLASH
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT FLASH
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BCR321UE6327HTSA1 |
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Виробник: Infineon Technologies
Description: IC LED DRVR LINEAR 250MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 10kHz
Type: Linear
Applications: Lighting, Signage
Current - Output / Channel: 250mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Max): 25V
Grade: Automotive
Qualification: AEC-Q101
Description: IC LED DRVR LINEAR 250MA SC74-6
Packaging: Bulk
Package / Case: SC-74, SOT-457
Voltage - Output: 16V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 10kHz
Type: Linear
Applications: Lighting, Signage
Current - Output / Channel: 250mA
Internal Switch(s): Yes
Supplier Device Package: PG-SC74-6
Voltage - Supply (Max): 25V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 40250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1471+ | 13.32 грн |
| AIKWH15N120CS7XKSA1 |
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на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 314.31 грн |
| 10+ | 230.36 грн |
| 25+ | 212.12 грн |
| 240+ | 171.66 грн |
| 480+ | 166.19 грн |
| 720+ | 163.46 грн |
| AIKZH15N120CS7XKSA1 |
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на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 354.28 грн |
| 10+ | 260.48 грн |
| 30+ | 236.78 грн |
| 120+ | 202.36 грн |
| 270+ | 193.86 грн |
| 510+ | 188.43 грн |
| SPS04N60C3BKMA1 |
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Виробник: Infineon Technologies
Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
Description: MOSFET N-CH 650V 4.5A TO251-3
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Supplier Device Package: PG-TO251-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
на замовлення 14621 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 315+ | 65.27 грн |
| SGP04N60XKSA1 |
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Виробник: Infineon Technologies
Description: IGBT NPT 600V 9.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/237ns
Switching Energy: 131µJ
Test Condition: 400V, 4A, 67Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9.4 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 19 A
Power - Max: 50 W
Description: IGBT NPT 600V 9.4A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 4A
Supplier Device Package: PG-TO220-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/237ns
Switching Energy: 131µJ
Test Condition: 400V, 4A, 67Ohm, 15V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 9.4 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 19 A
Power - Max: 50 W
на замовлення 7998 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 185+ | 111.98 грн |
| IRS2453DSPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR FULL-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.7V, 9.3V
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR FULL-BRIDGE 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TJ)
Voltage - Supply: 10V ~ 15.6V
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOIC
Rise / Fall Time (Typ): 120ns, 50ns
Channel Type: Synchronous
Driven Configuration: Full-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 4.7V, 9.3V
Current - Peak Output (Source, Sink): 180mA, 260mA
DigiKey Programmable: Not Verified
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В кошику
од. на суму грн.
| IR21363STRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IR21363STRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 12V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 566 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 267.28 грн |
| 10+ | 194.06 грн |
| 25+ | 178.22 грн |
| 100+ | 150.97 грн |
| 250+ | 143.21 грн |
| 500+ | 142.18 грн |
| IR2136JTRPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead), 32 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)
Rise / Fall Time (Typ): 125ns, 50ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
на замовлення 500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 500+ | 258.79 грн |
| IRS2332SPBF |
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Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tube
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 80ns, 35ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.


































