Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (119463) > Сторінка 779 з 1992

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CYW20705B0KWFBGT CYW20705B0KWFBGT Infineon Technologies Infineon-CYW20705_Single_Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20183683a&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Cut Tape (CT)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
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CYW20713A1KUBXGT CYW20713A1KUBXGT Infineon Technologies download Description: IC RF TXRX+MCU BLE 42WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 42-UFBGA, WLBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 59mA
Supplier Device Package: 42-WLBGA (3.02x2.51)
GPIO: 8
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, JTAG, SPI, UART, USB
DigiKey Programmable: Not Verified
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CYW20713A1KUBXGT CYW20713A1KUBXGT Infineon Technologies download Description: IC RF TXRX+MCU BLE 42WLBGA
Packaging: Cut Tape (CT)
Package / Case: 42-UFBGA, WLBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 59mA
Supplier Device Package: 42-WLBGA (3.02x2.51)
GPIO: 8
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, JTAG, SPI, UART, USB
DigiKey Programmable: Not Verified
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BCM20702B0KWFBGT BCM20702B0KWFBGT Infineon Technologies Infineon-CYW20702_Single-Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1e1b067ee&utm_source=cypress&utm_medium=referral&utm_campaign=202 Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 7
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART, USB
DigiKey Programmable: Not Verified
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IRG8P15N120KDPBF IRG8P15N120KDPBF Infineon Technologies IRG8P15N120KD%28-E%29PbF.pdf Description: IGBT 1200V 30A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 15ns/170ns
Switching Energy: 600µJ (on), 600µJ (off)
Test Condition: 600V, 10A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 125 W
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TLE42994GMV33XUMA3 TLE42994GMV33XUMA3 Infineon Technologies Infineon-TLE42994V33-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8517351f4c Description: IC REG LIN 3.3V 150MA PG-DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset
Grade: Automotive
PSRR: 66dB (100Hz)
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 2 mA
Qualification: AEC-Q100
на замовлення 19700 шт:
термін постачання 21-31 дні (днів)
211+95.80 грн
Мінімальне замовлення: 211
В кошику  од. на суму  грн.
TLS820F3ELV33BOARDTOBO1 Infineon Technologies Description: EVAL BOARD FOR TLS820F3
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 40V
Current - Output: 200mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS820F3
Channels per IC: 1 - Single
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+38781.02 грн
В кошику  од. на суму  грн.
TLS810B1EJV33BOARDTOBO1 TLS810B1EJV33BOARDTOBO1 Infineon Technologies Infineon-Z8F56638910-TLS8xxx1xJ-Demoboard-UserManual-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a424127c2725b Description: EVAL BOARD FOR TLS810B1EJV33
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS810B1EJV33
Channels per IC: 1 - Single
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+4122.11 грн
В кошику  од. на суму  грн.
REF3K3W3LFCPSUTOBO1 REF3K3W3LFCPSUTOBO1 Infineon Technologies infineon-reference-design-ref-3k3w-3lfc-psu-applicationnotes-en.pdf Description: EVAL BOARD FOR TLS4120D0EPV33
Packaging: Box
Voltage - Output: 50V
Voltage - Input: 180 ~ 265 VAC
Current - Output: 66A
Contents: Board(s)
Utilized IC / Part: TLS4120D0EPV33
Main Purpose: AC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Power - Output: 3.3kW
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+83462.40 грн
В кошику  од. на суму  грн.
FZ825R33HE4DBPSA1 FZ825R33HE4DBPSA1 Infineon Technologies Infineon-FZ825R33HE4D-DataSheet-v01_10-EN.pdf?fileId=5546d46278d64ffd0178f97d4dd50584 Description: IGBT MOD 3300V 825A AG-IHVB130-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 825A
NTC Thermistor: No
Supplier Device Package: AG-IHVB130-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 825 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93.5 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
1+91003.30 грн
В кошику  од. на суму  грн.
IAUCN04S7N012ATMA1 IAUCN04S7N012ATMA1 Infineon Technologies Infineon-IAUCN04S7N012-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecad6a1a51 Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+35.89 грн
10000+32.44 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
IAUCN04S7N012ATMA1 IAUCN04S7N012ATMA1 Infineon Technologies Infineon-IAUCN04S7N012-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecad6a1a51 Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Qualification: AEC-Q101
на замовлення 10170 шт:
термін постачання 21-31 дні (днів)
3+136.91 грн
10+84.15 грн
100+56.71 грн
500+42.19 грн
1000+38.65 грн
2000+36.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IQEH46NE2LM7ZCGSCATMA1 IQEH46NE2LM7ZCGSCATMA1 Infineon Technologies infineon-iqeh46ne2lm7zcgsc-datasheet-en.pdf Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 430A (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+69.58 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
IQEH46NE2LM7ZCGSCATMA1 IQEH46NE2LM7ZCGSCATMA1 Infineon Technologies infineon-iqeh46ne2lm7zcgsc-datasheet-en.pdf Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 430A (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
на замовлення 6301 шт:
термін постачання 21-31 дні (днів)
2+235.48 грн
10+147.58 грн
100+102.57 грн
500+78.21 грн
1000+76.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISCH69N04NM7VATMA1 ISCH69N04NM7VATMA1 Infineon Technologies infineon-isch69n04nm7v-datasheet-en.pdf Description: ISCH69N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 82µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V
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ISCH69N04NM7VATMA1 ISCH69N04NM7VATMA1 Infineon Technologies infineon-isch69n04nm7v-datasheet-en.pdf Description: ISCH69N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 82µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V
на замовлення 4006 шт:
термін постачання 21-31 дні (днів)
2+205.75 грн
10+128.45 грн
100+88.56 грн
500+67.11 грн
1000+64.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IDWD150G120C5XKSA1 IDWD150G120C5XKSA1 Infineon Technologies Infineon-IDWD150G120C5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0195473546a51abd Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 8485pF @ 1V, 100kHz
Current - Average Rectified (Io): 343A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 1.2 kV
на замовлення 109 шт:
термін постачання 21-31 дні (днів)
1+2403.33 грн
30+1530.77 грн
В кошику  од. на суму  грн.
IQFH99N06NM5ATMA1 IQFH99N06NM5ATMA1 Infineon Technologies Infineon-IQFH99N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e723b6b0777 Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 339A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
товару немає в наявності
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IQFH99N06NM5ATMA1 IQFH99N06NM5ATMA1 Infineon Technologies Infineon-IQFH99N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e723b6b0777 Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 339A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+399.77 грн
10+256.74 грн
100+183.89 грн
В кошику  од. на суму  грн.
IQFH86N06NM5ATMA1 IQFH86N06NM5ATMA1 Infineon Technologies Infineon-IQFH86N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e600b08076f Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 394A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 176µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 30 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+444.37 грн
10+286.65 грн
100+206.67 грн
В кошику  од. на суму  грн.
IDWD50G120C5XKSA1 IDWD50G120C5XKSA1 Infineon Technologies Infineon-IDWD50G120C5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0195473528d41ab4 Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2890pF @ 1V, 100kHz
Current - Average Rectified (Io): 131A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 400 µA @ 1.2 kV
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
1+1023.29 грн
30+604.32 грн
120+520.97 грн
В кошику  од. на суму  грн.
IDWD60G120C5XKSA1 IDWD60G120C5XKSA1 Infineon Technologies Infineon-IDWD60G120C5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01954735328f1ab7 Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3580pF @ 1V, 100kHz
Current - Average Rectified (Io): 153A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 480 µA @ 1.2 kV
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CY8C4148AZQ-S445 CY8C4148AZQ-S445 Infineon Technologies infineon-psoc-tm-4100s-plus-256kb-datasheet-en.pdf Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 54
DigiKey Programmable: Not Verified
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CY8C4148AXI-S445 CY8C4148AXI-S445 Infineon Technologies infineon-psoc-tm-4100s-plus-256kb-datasheet-en.pdf Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Number of I/O: 54
DigiKey Programmable: Not Verified
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CY8C4148AXQ-S455 CY8C4148AXQ-S455 Infineon Technologies infineon-psoc-tm-4100s-plus-256kb-datasheet-en.pdf Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 54
DigiKey Programmable: Not Verified
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CY7C1061GE18-15ZSXIT CY7C1061GE18-15ZSXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061G18-15ZSXIT CY7C1061G18-15ZSXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061GN18-15ZSXIT CY7C1061GN18-15ZSXIT Infineon Technologies Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061G18-15ZXIT CY7C1061G18-15ZXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061GE18-15ZXIT CY7C1061GE18-15ZXIT Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061GN18-15ZSXI CY7C1061GN18-15ZSXI Infineon Technologies Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061G18-15ZXI CY7C1061G18-15ZXI Infineon Technologies Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_ Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061DV18-15ZSXI CY7C1061DV18-15ZSXI Infineon Technologies CY7C1061DV18.pdf Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tube
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7S1061G18-15ZSXI CY7S1061G18-15ZSXI Infineon Technologies Infineon-CY7S1061G_CY7S1061GE_16-Mbit_(1_M_words_16_bit)_Static_RAM_with_Deep-Sleep_Feature_and_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec35ea53850&utm_source=cypress&utm_medium=referra Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Synchronous, SDR
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7S1061G18-15ZSXIT CY7S1061G18-15ZSXIT Infineon Technologies Infineon-CY7S1061G_CY7S1061GE_16-Mbit_(1_M_words_16_bit)_Static_RAM_with_Deep-Sleep_Feature_and_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec35ea53850&utm_source=cypress&utm_medium=referra Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Synchronous, SDR
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY8CTST200-48LTXI CY8CTST200-48LTXI Infineon Technologies CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf Description: IC MCU 32K FLASH 48-QFN
Packaging: Tray
Package / Case: 48-QFN
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 48-QFN
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 1297 шт:
термін постачання 21-31 дні (днів)
1+356.74 грн
10+262.77 грн
25+242.46 грн
100+206.54 грн
260+196.17 грн
520+190.20 грн
1040+182.26 грн
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KITLGPWRBOM005TOBO1 KITLGPWRBOM005TOBO1 Infineon Technologies Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e Description: EVAL POWER BOARD 100V
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
1+4133.06 грн
В кошику  од. на суму  грн.
KITLGPWRBOM006TOBO1 KITLGPWRBOM006TOBO1 Infineon Technologies Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e Description: EVAL POWER BOARD 150V
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
1+4507.02 грн
В кошику  од. на суму  грн.
KITLGPWRBOM004TOBO1 KITLGPWRBOM004TOBO1 Infineon Technologies Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e Description: EVAL POWER BOARD 60V
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Contents: Board(s)
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CY8C21434-24LFXIT Infineon Technologies Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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CY3235-ProxDet CY3235-ProxDet Infineon Technologies Infineon-CY3235_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef09a0f01af&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: KIT EVAL PSOC PROX DETECT
Packaging: Bulk
Interface: I2C, USB
Contents: Board(s), Cable(s)
Sensor Type: Touch, Capacitive
Utilized IC / Part: CY8C21434
Embedded: Yes, MCU, 8-Bit
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FF1400R23T2E7PB5BPSA1 FF1400R23T2E7PB5BPSA1 Infineon Technologies infineon-ff1400r23t2e7p-b5-datasheet-en.pdf Description: FF1400R23T2E7PB5BPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1.4kA
NTC Thermistor: Yes
Supplier Device Package: AG-XHP2K17
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1.4 kA
Voltage - Collector Emitter Breakdown (Max): 2.3 kV
Power - Max: 2.4 W
Current - Collector Cutoff (Max): 30 mA
Input Capacitance (Cies) @ Vce: 162000 pF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
1+63179.64 грн
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S25FL128SDSMFV001 S25FL128SDSMFV001 Infineon Technologies infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17 Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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EVALPFC3ICE3PCS01TOBO1 EVALPFC3ICE3PCS01TOBO1 Infineon Technologies infineon-ice3pcs01-ds-en.pdf Description: SONSTIGES
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ICE3PCS01G
Embedded: No
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2EDL5013U2DXTMA1 2EDL5013U2DXTMA1 Infineon Technologies infineon-2edl50x3u2d-datasheet-en.pdf Description: IC GATE DRVR
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-TSNP-12-5
Rise / Fall Time (Typ): 4.4ns, 3.5ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: GaN FET, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 3A, 5A
на замовлення 4118 шт:
термін постачання 21-31 дні (днів)
3+113.44 грн
10+80.23 грн
25+72.93 грн
100+60.87 грн
250+57.27 грн
500+55.09 грн
1000+53.89 грн
Мінімальне замовлення: 3
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CY62148EV30LL-45BVXIT CY62148EV30LL-45BVXIT Infineon Technologies Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d Description: IC SRAM 4MBIT PARALLEL 36VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 36-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+267.22 грн
Мінімальне замовлення: 2000
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CY62148EV30LL-45BVXIT CY62148EV30LL-45BVXIT Infineon Technologies Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d Description: IC SRAM 4MBIT PARALLEL 36VFBGA
Packaging: Cut Tape (CT)
Package / Case: 36-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
1+345.79 грн
10+310.01 грн
25+300.80 грн
50+275.73 грн
100+269.18 грн
250+260.57 грн
500+249.95 грн
1000+243.69 грн
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CY62148G18-55ZSXI CY62148G18-55ZSXI Infineon Technologies infineon-cy62148g-4-mb-mobl-ultra-low-power-ram-with-ecc-512k-words-8-bit-datasheet-en.pdf Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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CY62148G30-45SXIT CY62148G30-45SXIT Infineon Technologies Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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IMSQ120R040M2HHXUMA1 IMSQ120R040M2HHXUMA1 Infineon Technologies DS_IMSQ120R040M2HH_v1.00_en.pdf Description: SICFET 2N-CH 1200V 57A HDSOP16
Packaging: Tape & Reel (TR)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 290W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 800V
Rds On (Max) @ Id, Vgs: 40mOhm @ 18A, 18V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-HDSOP-16-221
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
750+641.72 грн
Мінімальне замовлення: 750
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IMSQ120R040M2HHXUMA1 IMSQ120R040M2HHXUMA1 Infineon Technologies DS_IMSQ120R040M2HH_v1.00_en.pdf Description: SICFET 2N-CH 1200V 57A HDSOP16
Packaging: Cut Tape (CT)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 290W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 800V
Rds On (Max) @ Id, Vgs: 40mOhm @ 18A, 18V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-HDSOP-16-221
на замовлення 1002 шт:
термін постачання 21-31 дні (днів)
1+1257.99 грн
10+861.46 грн
100+756.37 грн
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IMSQ120R053M2HHXUMA1 IMSQ120R053M2HHXUMA1 Infineon Technologies DS_IMSQ120R053M2HH_v1.00_en.pdf Description: SICFET 2N-CH 1200V 45A HDSOP16
Packaging: Tape & Reel (TR)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 234W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 800V
Rds On (Max) @ Id, Vgs: 53mOhm @ 13A, 18V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Supplier Device Package: PG-HDSOP-16-221
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IMSQ120R053M2HHXUMA1 IMSQ120R053M2HHXUMA1 Infineon Technologies DS_IMSQ120R053M2HH_v1.00_en.pdf Description: SICFET 2N-CH 1200V 45A HDSOP16
Packaging: Cut Tape (CT)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 234W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 800V
Rds On (Max) @ Id, Vgs: 53mOhm @ 13A, 18V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Supplier Device Package: PG-HDSOP-16-221
на замовлення 249 шт:
термін постачання 21-31 дні (днів)
1+1063.97 грн
10+721.11 грн
100+609.09 грн
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F3L8MXTR12C2M2H11BPSA1 F3L8MXTR12C2M2H11BPSA1 Infineon Technologies infineon-f3l8mxtr12c2m2q-h11-datasheet-en.pdf Description: F3L8MXTR12C2M2H11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 95A
Input Capacitance (Ciss) (Max) @ Vds: 7210pF @ 800V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 18V
Gate Charge (Qg) (Max) @ Vgs: 237nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 33mA
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F48MXTR12C2M2H11BPSA1 F48MXTR12C2M2H11BPSA1 Infineon Technologies infineon-f4-8mxtr12c2m2q-h11-datasheet-en.pdf Description: F48MXTR12C2M2H11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 95A
Input Capacitance (Ciss) (Max) @ Vds: 7210pF @ 800V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 18V
Gate Charge (Qg) (Max) @ Vgs: 237nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 33mA
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F48MXTR12C2M2QH11BPSA1 F48MXTR12C2M2QH11BPSA1 Infineon Technologies infineon-f4-8mxtr12c2m2q-h11-datasheet-en.pdf Description: F48MXTR12C2M2QH11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7210pF @ 800V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 18V
Gate Charge (Qg) (Max) @ Vgs: 237nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 33mA
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F3L8MXTR12C2M2QH11BPSA1 F3L8MXTR12C2M2QH11BPSA1 Infineon Technologies infineon-f3l8mxtr12c2m2q-h11-datasheet-en.pdf Description: F3L8MXTR12C2M2QH11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 95A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7210pF @ 800V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 18V
Gate Charge (Qg) (Max) @ Vgs: 237nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 33mA
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IPTC034N15NM6ATMA1 IPTC034N15NM6ATMA1 Infineon Technologies DS_IPTC034N15NM6_en.pdf Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 179µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
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IPTC034N15NM6ATMA1 IPTC034N15NM6ATMA1 Infineon Technologies DS_IPTC034N15NM6_en.pdf Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 179µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
на замовлення 674 шт:
термін постачання 21-31 дні (днів)
1+390.38 грн
10+250.64 грн
100+179.61 грн
500+152.52 грн
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AUIRFN7110TR AUIRFN7110TR Infineon Technologies auirfn7110.pdf?fileId=5546d462533600a4015355b1638a1438 Description: MOSFET N-CH 100V 58A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 35A, 10V
Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Qualification: AEC-Q101
на замовлення 44000 шт:
термін постачання 21-31 дні (днів)
158+127.28 грн
Мінімальне замовлення: 158
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CYW20705B0KWFBGT Infineon-CYW20705_Single_Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v07_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee20183683a&utm_source=cypress&utm_medium=referral&utm_campaign=202
CYW20705B0KWFBGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Cut Tape (CT)
Package / Case: 50-WFBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.1
Current - Receiving: 31mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 8
RF Family/Standard: Bluetooth
Serial Interfaces: SPI, UART, USB
DigiKey Programmable: Not Verified
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CYW20713A1KUBXGT download
CYW20713A1KUBXGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 42WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 42-UFBGA, WLBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 59mA
Supplier Device Package: 42-WLBGA (3.02x2.51)
GPIO: 8
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, JTAG, SPI, UART, USB
DigiKey Programmable: Not Verified
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CYW20713A1KUBXGT download
CYW20713A1KUBXGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 42WLBGA
Packaging: Cut Tape (CT)
Package / Case: 42-UFBGA, WLBGA
Sensitivity: -91dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 59mA
Supplier Device Package: 42-WLBGA (3.02x2.51)
GPIO: 8
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, JTAG, SPI, UART, USB
DigiKey Programmable: Not Verified
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BCM20702B0KWFBGT Infineon-CYW20702_Single-Chip_Bluetooth_Transceiver_and_Baseband_Processor_Datasheet-AdditionalTechnicalInformation-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee1e1b067ee&utm_source=cypress&utm_medium=referral&utm_campaign=202
BCM20702B0KWFBGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 50WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 50-WFBGA
Sensitivity: -92dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Power - Output: 10dBm
Protocol: Bluetooth v4.0 +EDR
Current - Receiving: 32mA
Data Rate (Max): 3Mbps
Current - Transmitting: 65mA
Supplier Device Package: 50-WFBGA (4.5x4)
GPIO: 7
Modulation: 4DQPSK, 8DPSK, GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, I2S, SPI, UART, USB
DigiKey Programmable: Not Verified
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IRG8P15N120KDPBF IRG8P15N120KD%28-E%29PbF.pdf
IRG8P15N120KDPBF
Виробник: Infineon Technologies
Description: IGBT 1200V 30A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 15ns/170ns
Switching Energy: 600µJ (on), 600µJ (off)
Test Condition: 600V, 10A, 10Ohm, 15V
Gate Charge: 98 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 125 W
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TLE42994GMV33XUMA3 Infineon-TLE42994V33-DS-v01_20-EN.pdf?fileId=5546d46258fc0bc101595f8517351f4c
TLE42994GMV33XUMA3
Виробник: Infineon Technologies
Description: IC REG LIN 3.3V 150MA PG-DSO-14
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: PG-DSO-14
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Reset
Grade: Automotive
PSRR: 66dB (100Hz)
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 2 mA
Qualification: AEC-Q100
на замовлення 19700 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
211+95.80 грн
Мінімальне замовлення: 211
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TLS820F3ELV33BOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS820F3
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 40V
Current - Output: 200mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS820F3
Channels per IC: 1 - Single
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+38781.02 грн
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TLS810B1EJV33BOARDTOBO1 Infineon-Z8F56638910-TLS8xxx1xJ-Demoboard-UserManual-v01_01-EN.pdf?fileId=5546d46259d9a4bf015a424127c2725b
TLS810B1EJV33BOARDTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS810B1EJV33
Packaging: Bulk
Voltage - Output: 3.3V
Voltage - Input: 3V ~ 42V
Current - Output: 100mA
Contents: Board(s)
Regulator Type: Positive Fixed
Utilized IC / Part: TLS810B1EJV33
Channels per IC: 1 - Single
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4122.11 грн
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REF3K3W3LFCPSUTOBO1 infineon-reference-design-ref-3k3w-3lfc-psu-applicationnotes-en.pdf
REF3K3W3LFCPSUTOBO1
Виробник: Infineon Technologies
Description: EVAL BOARD FOR TLS4120D0EPV33
Packaging: Box
Voltage - Output: 50V
Voltage - Input: 180 ~ 265 VAC
Current - Output: 66A
Contents: Board(s)
Utilized IC / Part: TLS4120D0EPV33
Main Purpose: AC/DC Converter
Outputs and Type: 1 Non-Isolated Output
Power - Output: 3.3kW
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+83462.40 грн
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FZ825R33HE4DBPSA1 Infineon-FZ825R33HE4D-DataSheet-v01_10-EN.pdf?fileId=5546d46278d64ffd0178f97d4dd50584
FZ825R33HE4DBPSA1
Виробник: Infineon Technologies
Description: IGBT MOD 3300V 825A AG-IHVB130-3
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single Switch
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 825A
NTC Thermistor: No
Supplier Device Package: AG-IHVB130-3
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 825 A
Voltage - Collector Emitter Breakdown (Max): 3300 V
Power - Max: 2400000 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 93.5 nF @ 25 V
на замовлення 1 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+91003.30 грн
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IAUCN04S7N012ATMA1 Infineon-IAUCN04S7N012-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecad6a1a51
IAUCN04S7N012ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+35.89 грн
10000+32.44 грн
Мінімальне замовлення: 5000
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IAUCN04S7N012ATMA1 Infineon-IAUCN04S7N012-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8d2fe47b018d35ecad6a1a51
IAUCN04S7N012ATMA1
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Qualification: AEC-Q101
на замовлення 10170 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+136.91 грн
10+84.15 грн
100+56.71 грн
500+42.19 грн
1000+38.65 грн
2000+36.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IQEH46NE2LM7ZCGSCATMA1 infineon-iqeh46ne2lm7zcgsc-datasheet-en.pdf
IQEH46NE2LM7ZCGSCATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 430A (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+69.58 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
IQEH46NE2LM7ZCGSCATMA1 infineon-iqeh46ne2lm7zcgsc-datasheet-en.pdf
IQEH46NE2LM7ZCGSCATMA1
Виробник: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: 9-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 430A (Tc)
Rds On (Max) @ Id, Vgs: 0.48mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 1.7V @ 432µA
Supplier Device Package: PG-WHTFN-9-1
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 12 V
на замовлення 6301 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+235.48 грн
10+147.58 грн
100+102.57 грн
500+78.21 грн
1000+76.97 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
ISCH69N04NM7VATMA1 infineon-isch69n04nm7v-datasheet-en.pdf
ISCH69N04NM7VATMA1
Виробник: Infineon Technologies
Description: ISCH69N04NM7VATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 82µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V
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ISCH69N04NM7VATMA1 infineon-isch69n04nm7v-datasheet-en.pdf
ISCH69N04NM7VATMA1
Виробник: Infineon Technologies
Description: ISCH69N04NM7VATMA1
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 357A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 15V
Power Dissipation (Max): 3W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 3.15V @ 82µA
Supplier Device Package: PG-TDSON-8
Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 20 V
на замовлення 4006 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+205.75 грн
10+128.45 грн
100+88.56 грн
500+67.11 грн
1000+64.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IDWD150G120C5XKSA1 Infineon-IDWD150G120C5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0195473546a51abd
IDWD150G120C5XKSA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 8485pF @ 1V, 100kHz
Current - Average Rectified (Io): 343A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 150 A
Current - Reverse Leakage @ Vr: 1.2 mA @ 1.2 kV
на замовлення 109 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2403.33 грн
30+1530.77 грн
В кошику  од. на суму  грн.
IQFH99N06NM5ATMA1 Infineon-IQFH99N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e723b6b0777
IQFH99N06NM5ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 339A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
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IQFH99N06NM5ATMA1 Infineon-IQFH99N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e723b6b0777
IQFH99N06NM5ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 339A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 214W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 147µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+399.77 грн
10+256.74 грн
100+183.89 грн
В кошику  од. на суму  грн.
IQFH86N06NM5ATMA1 Infineon-IQFH86N06NM5-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c901008d101904e600b08076f
IQFH86N06NM5ATMA1
Виробник: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Cut Tape (CT)
Package / Case: 12-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 394A (Tc)
Rds On (Max) @ Id, Vgs: 0.86mOhm @ 100A, 10V
Power Dissipation (Max): 3W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 176µA
Supplier Device Package: PG-TSON-12-U01
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 30 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+444.37 грн
10+286.65 грн
100+206.67 грн
В кошику  од. на суму  грн.
IDWD50G120C5XKSA1 Infineon-IDWD50G120C5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0195473528d41ab4
IDWD50G120C5XKSA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 2890pF @ 1V, 100kHz
Current - Average Rectified (Io): 131A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
Current - Reverse Leakage @ Vr: 400 µA @ 1.2 kV
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1023.29 грн
30+604.32 грн
120+520.97 грн
В кошику  од. на суму  грн.
IDWD60G120C5XKSA1 Infineon-IDWD60G120C5-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b01954735328f1ab7
IDWD60G120C5XKSA1
Виробник: Infineon Technologies
Description: SIC DISCRETE
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 3580pF @ 1V, 100kHz
Current - Average Rectified (Io): 153A
Supplier Device Package: PG-TO247-2-U01
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 60 A
Current - Reverse Leakage @ Vr: 480 µA @ 1.2 kV
товару немає в наявності
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CY8C4148AZQ-S445 infineon-psoc-tm-4100s-plus-256kb-datasheet-en.pdf
CY8C4148AZQ-S445
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 54
DigiKey Programmable: Not Verified
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CY8C4148AXI-S445 infineon-psoc-tm-4100s-plus-256kb-datasheet-en.pdf
CY8C4148AXI-S445
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 64TQFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x10b Slope, 16x12b SAR; D/A 2xIDAC
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, LCD, POR, PWM, WDT
Supplier Device Package: 64-TQFP (14x14)
Number of I/O: 54
DigiKey Programmable: Not Verified
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CY8C4148AXQ-S455 infineon-psoc-tm-4100s-plus-256kb-datasheet-en.pdf
CY8C4148AXQ-S455
Виробник: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 100TQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, LVD, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 100-TQFP (14x14)
Number of I/O: 54
DigiKey Programmable: Not Verified
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CY7C1061GE18-15ZSXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE18-15ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061G18-15ZSXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061G18-15ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061GN18-15ZSXIT Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1061GN18-15ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061G18-15ZXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061G18-15ZXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061GE18-15ZXIT Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061GE18-15ZXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061GN18-15ZSXI Infineon-CY7C1061GN_CY7C10612GN_16-Mbit_(1M_words_16_bit)_Static_RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee280b968f7&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY7C1061GN18-15ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061G18-15ZXI Infineon-CY7C1061G_CY7C1061GE_16_MBIT_(1M_WORDS_X_16_BIT)_STATIC_RAM_WITH_ERROR_CORRECTING_CODE_(ECC)-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec387e33888&utm_source=cypress&utm_medium=referral&utm_campaign=202110_
CY7C1061G18-15ZXI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PARALLEL 48TSOP I
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
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CY7C1061DV18-15ZSXI CY7C1061DV18.pdf
CY7C1061DV18-15ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tube
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7S1061G18-15ZSXI Infineon-CY7S1061G_CY7S1061GE_16-Mbit_(1_M_words_16_bit)_Static_RAM_with_Deep-Sleep_Feature_and_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec35ea53850&utm_source=cypress&utm_medium=referra
CY7S1061G18-15ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Synchronous, SDR
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY7S1061G18-15ZSXIT Infineon-CY7S1061G_CY7S1061GE_16-Mbit_(1_M_words_16_bit)_Static_RAM_with_Deep-Sleep_Feature_and_Error-Correcting_Code_(ECC)-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec35ea53850&utm_source=cypress&utm_medium=referra
CY7S1061G18-15ZSXIT
Виробник: Infineon Technologies
Description: IC SRAM 16MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 16Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Synchronous, SDR
Memory Format: SRAM
Supplier Device Package: 54-TSOP II
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 15 ns
Memory Organization: 1M x 16
DigiKey Programmable: Not Verified
товару немає в наявності
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CY8CTST200-48LTXI CY8CTMG20x%2C%20CY8CTMG20xA%2C.pdf
CY8CTST200-48LTXI
Виробник: Infineon Technologies
Description: IC MCU 32K FLASH 48-QFN
Packaging: Tray
Package / Case: 48-QFN
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 2K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.8V
Controller Series: CY8CT
Program Memory Type: FLASH (32kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 48-QFN
Number of I/O: 38
DigiKey Programmable: Not Verified
на замовлення 1297 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+356.74 грн
10+262.77 грн
25+242.46 грн
100+206.54 грн
260+196.17 грн
520+190.20 грн
1040+182.26 грн
В кошику  од. на суму  грн.
KITLGPWRBOM005TOBO1 Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e
KITLGPWRBOM005TOBO1
Виробник: Infineon Technologies
Description: EVAL POWER BOARD 100V
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Contents: Board(s)
на замовлення 2 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4133.06 грн
В кошику  од. на суму  грн.
KITLGPWRBOM006TOBO1 Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e
KITLGPWRBOM006TOBO1
Виробник: Infineon Technologies
Description: EVAL POWER BOARD 150V
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Contents: Board(s)
на замовлення 3 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+4507.02 грн
В кошику  од. на суму  грн.
KITLGPWRBOM004TOBO1 Infineon-UserManual_LVDSPD_low_voltage_drives_scalable_power_demonstration_board-UM-v01_00-EN.pdf?fileId=5546d462696dbf120169b58bda49538e
KITLGPWRBOM004TOBO1
Виробник: Infineon Technologies
Description: EVAL POWER BOARD 60V
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Contents: Board(s)
товару немає в наявності
В кошику  од. на суму  грн.
CY8C21434-24LFXIT
Виробник: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
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CY3235-ProxDet Infineon-CY3235_Quick_Start_Guide-UserManual-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ef09a0f01af&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY3235-ProxDet
Виробник: Infineon Technologies
Description: KIT EVAL PSOC PROX DETECT
Packaging: Bulk
Interface: I2C, USB
Contents: Board(s), Cable(s)
Sensor Type: Touch, Capacitive
Utilized IC / Part: CY8C21434
Embedded: Yes, MCU, 8-Bit
товару немає в наявності
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FF1400R23T2E7PB5BPSA1 infineon-ff1400r23t2e7p-b5-datasheet-en.pdf
FF1400R23T2E7PB5BPSA1
Виробник: Infineon Technologies
Description: FF1400R23T2E7PB5BPSA1
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 1.4kA
NTC Thermistor: Yes
Supplier Device Package: AG-XHP2K17
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 1.4 kA
Voltage - Collector Emitter Breakdown (Max): 2.3 kV
Power - Max: 2.4 W
Current - Collector Cutoff (Max): 30 mA
Input Capacitance (Cies) @ Vce: 162000 pF @ 25 V
на замовлення 8 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+63179.64 грн
В кошику  од. на суму  грн.
S25FL128SDSMFV001 infineon-s25fl128s-s25fl256s-128-mb-16-mb-256-mb-32-mb-fl-s-flash-spi-multi-io-3-v-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ecfb6a64a17
S25FL128SDSMFV001
Виробник: Infineon Technologies
Description: IC FLASH 128MBIT SPI/QUAD 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Clock Frequency: 80 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Memory Interface: SPI - Quad I/O
Memory Organization: 16M x 8
DigiKey Programmable: Not Verified
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EVALPFC3ICE3PCS01TOBO1 infineon-ice3pcs01-ds-en.pdf
EVALPFC3ICE3PCS01TOBO1
Виробник: Infineon Technologies
Description: SONSTIGES
Packaging: Box
Function: Power Factor Correction
Type: Power Management
Contents: Board(s)
Utilized IC / Part: ICE3PCS01G
Embedded: No
товару немає в наявності
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2EDL5013U2DXTMA1 infineon-2edl50x3u2d-datasheet-en.pdf
2EDL5013U2DXTMA1
Виробник: Infineon Technologies
Description: IC GATE DRVR
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 4.5V ~ 5.5V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 120 V
Supplier Device Package: PG-TSNP-12-5
Rise / Fall Time (Typ): 4.4ns, 3.5ns
Channel Type: Independent
Driven Configuration: High-Side, Low-Side
Number of Drivers: 2
Gate Type: GaN FET, MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 3A, 5A
на замовлення 4118 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+113.44 грн
10+80.23 грн
25+72.93 грн
100+60.87 грн
250+57.27 грн
500+55.09 грн
1000+53.89 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CY62148EV30LL-45BVXIT Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d
CY62148EV30LL-45BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 36-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+267.22 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
CY62148EV30LL-45BVXIT Infineon-CY62148EV30_MOBL_4_MBIT_(512K_X_8)_STATIC_RAM-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebeb904328d
CY62148EV30LL-45BVXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 36VFBGA
Packaging: Cut Tape (CT)
Package / Case: 36-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 36-VFBGA (6x8)
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+345.79 грн
10+310.01 грн
25+300.80 грн
50+275.73 грн
100+269.18 грн
250+260.57 грн
500+249.95 грн
1000+243.69 грн
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CY62148G18-55ZSXI infineon-cy62148g-4-mb-mobl-ultra-low-power-ram-with-ecc-512k-words-8-bit-datasheet-en.pdf
CY62148G18-55ZSXI
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32TSOP II
Packaging: Tray
Package / Case: 32-SOIC (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 2.2V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-TSOP II
Write Cycle Time - Word, Page: 55ns
Memory Interface: Parallel
Access Time: 55 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
товару немає в наявності
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CY62148G30-45SXIT Infineon-CY62148G_MoBL_4-Mbit_(512K_words_X_8_bit)_Static_RAM_With_Error-Correcting_Code_(ECC)-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed904c65aae&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_e
CY62148G30-45SXIT
Виробник: Infineon Technologies
Description: IC SRAM 4MBIT PARALLEL 32SOIC
Packaging: Tape & Reel (TR)
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 32-SOIC
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
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IMSQ120R040M2HHXUMA1 DS_IMSQ120R040M2HH_v1.00_en.pdf
IMSQ120R040M2HHXUMA1
Виробник: Infineon Technologies
Description: SICFET 2N-CH 1200V 57A HDSOP16
Packaging: Tape & Reel (TR)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 290W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 800V
Rds On (Max) @ Id, Vgs: 40mOhm @ 18A, 18V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-HDSOP-16-221
на замовлення 750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
750+641.72 грн
Мінімальне замовлення: 750
В кошику  од. на суму  грн.
IMSQ120R040M2HHXUMA1 DS_IMSQ120R040M2HH_v1.00_en.pdf
IMSQ120R040M2HHXUMA1
Виробник: Infineon Technologies
Description: SICFET 2N-CH 1200V 57A HDSOP16
Packaging: Cut Tape (CT)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 290W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1310pF @ 800V
Rds On (Max) @ Id, Vgs: 40mOhm @ 18A, 18V
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-HDSOP-16-221
на замовлення 1002 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1257.99 грн
10+861.46 грн
100+756.37 грн
В кошику  од. на суму  грн.
IMSQ120R053M2HHXUMA1 DS_IMSQ120R053M2HH_v1.00_en.pdf
IMSQ120R053M2HHXUMA1
Виробник: Infineon Technologies
Description: SICFET 2N-CH 1200V 45A HDSOP16
Packaging: Tape & Reel (TR)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 234W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 800V
Rds On (Max) @ Id, Vgs: 53mOhm @ 13A, 18V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Supplier Device Package: PG-HDSOP-16-221
товару немає в наявності
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IMSQ120R053M2HHXUMA1 DS_IMSQ120R053M2HH_v1.00_en.pdf
IMSQ120R053M2HHXUMA1
Виробник: Infineon Technologies
Description: SICFET 2N-CH 1200V 45A HDSOP16
Packaging: Cut Tape (CT)
Package / Case: 24-BSOP (0.606", 15.40mm Width), 16 Leads, Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
Power - Max: 234W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1010pF @ 800V
Rds On (Max) @ Id, Vgs: 53mOhm @ 13A, 18V
Gate Charge (Qg) (Max) @ Vgs: 28nC @ 0V
Vgs(th) (Max) @ Id: 5.1V @ 4.1mA
Supplier Device Package: PG-HDSOP-16-221
на замовлення 249 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1063.97 грн
10+721.11 грн
100+609.09 грн
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F3L8MXTR12C2M2H11BPSA1 infineon-f3l8mxtr12c2m2q-h11-datasheet-en.pdf
F3L8MXTR12C2M2H11BPSA1
Виробник: Infineon Technologies
Description: F3L8MXTR12C2M2H11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 95A
Input Capacitance (Ciss) (Max) @ Vds: 7210pF @ 800V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 18V
Gate Charge (Qg) (Max) @ Vgs: 237nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 33mA
товару немає в наявності
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F48MXTR12C2M2H11BPSA1 infineon-f4-8mxtr12c2m2q-h11-datasheet-en.pdf
F48MXTR12C2M2H11BPSA1
Виробник: Infineon Technologies
Description: F48MXTR12C2M2H11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 20mW
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 95A
Input Capacitance (Ciss) (Max) @ Vds: 7210pF @ 800V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 18V
Gate Charge (Qg) (Max) @ Vgs: 237nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 33mA
товару немає в наявності
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F48MXTR12C2M2QH11BPSA1 infineon-f4-8mxtr12c2m2q-h11-datasheet-en.pdf
F48MXTR12C2M2QH11BPSA1
Виробник: Infineon Technologies
Description: F48MXTR12C2M2QH11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7210pF @ 800V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 18V
Gate Charge (Qg) (Max) @ Vgs: 237nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 33mA
товару немає в наявності
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F3L8MXTR12C2M2QH11BPSA1 infineon-f3l8mxtr12c2m2q-h11-datasheet-en.pdf
F3L8MXTR12C2M2QH11BPSA1
Виробник: Infineon Technologies
Description: F3L8MXTR12C2M2QH11BPSA1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 95A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 7210pF @ 800V
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 75A, 18V
Gate Charge (Qg) (Max) @ Vgs: 237nC @ 18V
Vgs(th) (Max) @ Id: 5.15V @ 33mA
товару немає в наявності
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IPTC034N15NM6ATMA1 DS_IPTC034N15NM6_en.pdf
IPTC034N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 179µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
товару немає в наявності
В кошику  од. на суму  грн.
IPTC034N15NM6ATMA1 DS_IPTC034N15NM6_en.pdf
IPTC034N15NM6ATMA1
Виробник: Infineon Technologies
Description: TRENCH >=100V
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 194A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 84A, 15V
Power Dissipation (Max): 3.8W (Ta), 294W (Tc)
Vgs(th) (Max) @ Id: 4V @ 179µA
Supplier Device Package: PG-HDSOP-16-2
Drive Voltage (Max Rds On, Min Rds On): 8V, 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 75 V
на замовлення 674 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+390.38 грн
10+250.64 грн
100+179.61 грн
500+152.52 грн
В кошику  од. на суму  грн.
AUIRFN7110TR auirfn7110.pdf?fileId=5546d462533600a4015355b1638a1438
AUIRFN7110TR
Виробник: Infineon Technologies
Description: MOSFET N-CH 100V 58A 8PQFN
Packaging: Bulk
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 35A, 10V
Power Dissipation (Max): 4.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: 8-PQFN (5x6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Qualification: AEC-Q101
на замовлення 44000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
158+127.28 грн
Мінімальне замовлення: 158
В кошику  од. на суму  грн.
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