Продукція > INFINEON TECHNOLOGIES > Всі товари виробника INFINEON TECHNOLOGIES (117827) > Сторінка 782 з 1964

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ICE184LMXUMA1 ICE184LMXUMA1 Infineon Technologies infineon-ice184lm-datasheet-en.pdf?fileId=8ac78c8c962508060196807d2e400487 Description: ICE184LMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 150kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 9.45V ~ 32V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: EN, Soft Start
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
2+269.05 грн
10+195.18 грн
25+179.32 грн
100+151.94 грн
250+144.15 грн
500+143.23 грн
Мінімальне замовлення: 2
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REF45W1ZVS184EMTOBO2 Infineon Technologies Description: EVAL BOARD FOR ICE184EM
Packaging: Box
Voltage - Output: 12V, 15V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 3.75A, 150mA
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE184EM
Main Purpose: AC/DC Converter
Outputs and Type: 1 Isolated Output, 1 Non-Isolated Output
Power - Output: 45W
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+7126.18 грн
В кошику  од. на суму  грн.
REF45W1ZVS184LMTOBO2 Infineon Technologies Description: EVAL BOARD FOR ICE184LM
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 3.75A
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE184LM
Main Purpose: AC/DC Converter
Outputs and Type: 1 Isolated Output
Power - Output: 45W
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
1+7126.18 грн
В кошику  од. на суму  грн.
REF60W1ZVS186EMTOBO2 REF60W1ZVS186EMTOBO2 Infineon Technologies PdfFile534889.pdf Description: EVAL BOARD FOR ICE186EM
Packaging: Box
Voltage - Output: 12V, 15V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 5A, 150mA
Contents: Board(s)
Frequency - Switching: 45Hz, 50Hz
Regulator Topology: Boost
Utilized IC / Part: ICE186EM
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output, 1 Non-Isolated Output
Power - Output: 60W
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
1+8854.98 грн
В кошику  од. на суму  грн.
TUA 6037F TUA 6037F Infineon Technologies TUA%206039F-2%2C6037F.pdf Description: IC VIDEO TUNER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Tuner
Voltage - Supply: 4.5V ~ 5.5V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: PG-VQFN-48
Control Interface: I2C
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TUA 6039 TUA 6039 Infineon Technologies TUA%206039%28-2%29%2C6037.pdf Description: IC VIDEO TUNER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Tuner
Voltage - Supply: 3V ~ 5.5V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: PG-VQFN-48
Control Interface: I2C
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TUA 6039F-2 TUA 6039F-2 Infineon Technologies TUA%206039F-2%2C6037F.pdf Description: IC VIDEO TUNER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Tuner
Voltage - Supply: 4.5V ~ 5.5V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: PG-VQFN-48
Control Interface: I2C
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TUA 9001 TUA 9001 Infineon Technologies TUA%209001.pdf Description: IC VIDEO TUNER 65WFSGA
Packaging: Tape & Reel (TR)
Package / Case: 65-WFBGA
Mounting Type: Surface Mount
Function: Tuner
Applications: Consumer Video
Supplier Device Package: PG-WFSGA-65
Control Interface: Analog Voltage
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IMCQ120R017M2HXTMA1 IMCQ120R017M2HXTMA1 Infineon Technologies Infineon-IMCQ120R017M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194da4fa2fa4240 Description: SICFET N-CH 1200V 118A 22PWRBSOP
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40A, 18V
Power Dissipation (Max): 580W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91.1 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3730 pF @ 800 V
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IMCQ120R017M2HXTMA1 IMCQ120R017M2HXTMA1 Infineon Technologies Infineon-IMCQ120R017M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194da4fa2fa4240 Description: SICFET N-CH 1200V 118A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40A, 18V
Power Dissipation (Max): 580W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91.1 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3730 pF @ 800 V
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
1+1317.77 грн
10+903.99 грн
100+799.28 грн
В кошику  од. на суму  грн.
IMCQ120R010M2HXTMA1 IMCQ120R010M2HXTMA1 Infineon Technologies Infineon-IMCQ120R010M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194da4f964f423d Description: SICFET N-CH 1200V 195A 22PWRBSOP
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 69A, 18V
Power Dissipation (Max): 880W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 21.7mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 150.1 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 800 V
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IMCQ120R010M2HXTMA1 IMCQ120R010M2HXTMA1 Infineon Technologies Infineon-IMCQ120R010M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194da4f964f423d Description: SICFET N-CH 1200V 195A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 69A, 18V
Power Dissipation (Max): 880W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 21.7mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 150.1 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 800 V
на замовлення 477 шт:
термін постачання 21-31 дні (днів)
1+2029.22 грн
10+1427.74 грн
100+1383.82 грн
В кошику  од. на суму  грн.
IMCQ120R040M2HXTMA1 IMCQ120R040M2HXTMA1 Infineon Technologies DS_IMCQ120R040M2H_v1.00_en.pdf Description: SICFET N-CH 1200V 56A 22PWRBSOP
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-HDSOP-22-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 800 V
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IMCQ120R040M2HXTMA1 IMCQ120R040M2HXTMA1 Infineon Technologies DS_IMCQ120R040M2H_v1.00_en.pdf Description: SICFET N-CH 1200V 56A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-HDSOP-22-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 800 V
на замовлення 281 шт:
термін постачання 21-31 дні (днів)
1+760.86 грн
10+505.85 грн
100+392.08 грн
В кошику  од. на суму  грн.
TLE9273QXXUMA2 TLE9273QXXUMA2 Infineon Technologies Infineon-TLE9273QX-DataSheet-v02_00-EN.pdf?fileId=5546d46268554f4a01687fb220f74c5a Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 28V
Applications: System Basis Chip
Current - Supply: 5mA
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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TLE9273QXXUMA2 TLE9273QXXUMA2 Infineon Technologies Infineon-TLE9273QX-DataSheet-v02_00-EN.pdf?fileId=5546d46268554f4a01687fb220f74c5a Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 28V
Applications: System Basis Chip
Current - Supply: 5mA
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2330 шт:
термін постачання 21-31 дні (днів)
1+394.55 грн
10+290.81 грн
25+268.51 грн
100+228.98 грн
250+219.98 грн
В кошику  од. на суму  грн.
TLE9271QXV33XUMA2 TLE9271QXV33XUMA2 Infineon Technologies Infineon-TLE9271QX%20V33-DataSheet-v02_00-EN.pdf?fileId=5546d46268554f4a0168854f82cf6859 Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 28V
Applications: System Basis Chip
Current - Supply: 5mA
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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TLE9271QXXUMA2 TLE9271QXXUMA2 Infineon Technologies Infineon-TLE9271QX-DataSheet-v02_00-EN.pdf?fileId=5546d46268554f4a016885465c676856 Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 28V
Applications: System Basis Chip
Current - Supply: 5mA
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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TLE9272QXXUMA2 TLE9272QXXUMA2 Infineon Technologies Infineon-TLE9272QX-DataSheet-v02_00-EN.pdf?fileId=5546d46268554f4a01688561d3be685c Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 28V
Applications: System Basis Chip
Current - Supply: 5mA
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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TLE9274QXXUMA3 TLE9274QXXUMA3 Infineon Technologies Infineon-TLE9274QX-DataSheet-v02_00-EN.pdf?fileId=5546d4627762291e01776d60f54a7b82 Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: System Basis Chip
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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BAV70 Infineon Technologies Infineon-BAV70SERIES-DS-v01_01-en.pdf?fileId=db3a30431400ef6801141c0ba40e041d Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 µA @ 70 V
на замовлення 167566 шт:
термін постачання 21-31 дні (днів)
6045+3.38 грн
Мінімальне замовлення: 6045
В кошику  од. на суму  грн.
CYW20730A2KFBG CYW20730A2KFBG Infineon Technologies CYW20730_RevJ_4-25-17.pdf Description: IC RF TXRX+MCU BLE 64FBGA
Packaging: Tray
Package / Case: 64-VFBGA
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.2V
Power - Output: 4dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.6mA
Data Rate (Max): 1Mbps
Current - Transmitting: 19mA ~ 24mA
Supplier Device Package: 64-FBGA (7x7)
GPIO: 4
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
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CYW43455LXKUBGT CYW43455LXKUBGT Infineon Technologies Infineon-AIROC_CYW43455-DataSheet-v01_03-EN.pdf Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 140-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 845kB ROM, 270kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11ac, Bluetooth v4.1
Current - Receiving: 55mA
Data Rate (Max): 433.3Mbps
Current - Transmitting: 400mA
Supplier Device Package: 140-WLBGA (4.47x5.27)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+415.18 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
CYW43455LXKUBGT CYW43455LXKUBGT Infineon Technologies Infineon-AIROC_CYW43455-DataSheet-v01_03-EN.pdf Description: WI-FI COMBO IOT
Packaging: Cut Tape (CT)
Package / Case: 140-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 845kB ROM, 270kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11ac, Bluetooth v4.1
Current - Receiving: 55mA
Data Rate (Max): 433.3Mbps
Current - Transmitting: 400mA
Supplier Device Package: 140-WLBGA (4.47x5.27)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
1+666.73 грн
10+500.64 грн
25+465.29 грн
100+400.23 грн
250+382.87 грн
500+372.40 грн
1000+357.82 грн
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CYW43455XKUBGT CYW43455XKUBGT Infineon Technologies Infineon-CYW43455_Single-Chip_5G_WiFi_IEEE_802.11n_ac_MAC_Baseband_Radio_with_Integrated_Bluetooth_5.0_Datasheet-AdditionalTechnicalInformation-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee226686889 Description: IC RF TXRX+MCU BLE 140WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 140-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Current - Receiving: 55mA
Data Rate (Max): 433.3Mbps
Current - Transmitting: 400mA
Supplier Device Package: 140-WLBGA (4.47x5.27)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
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CYW43455XKUBGT CYW43455XKUBGT Infineon Technologies Infineon-CYW43455_Single-Chip_5G_WiFi_IEEE_802.11n_ac_MAC_Baseband_Radio_with_Integrated_Bluetooth_5.0_Datasheet-AdditionalTechnicalInformation-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee226686889 Description: IC RF TXRX+MCU BLE 140WLBGA
Packaging: Cut Tape (CT)
Package / Case: 140-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Current - Receiving: 55mA
Data Rate (Max): 433.3Mbps
Current - Transmitting: 400mA
Supplier Device Package: 140-WLBGA (4.47x5.27)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 4975 шт:
термін постачання 21-31 дні (днів)
1+681.63 грн
10+570.05 грн
25+540.01 грн
100+468.02 грн
250+444.81 грн
500+428.43 грн
1000+406.23 грн
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IRLR2905ZTRLPBF IRLR2905ZTRLPBF Infineon Technologies irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
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IRFZ44VZPBF IRFZ44VZPBF Infineon Technologies IRSDS11304-1.pdf?t.download=true&u=5oefqw Description: IRFZ44 - 12V-300V N-CHANNEL POWE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
на замовлення 173 шт:
термін постачання 21-31 дні (днів)
173+116.78 грн
Мінімальне замовлення: 173
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IR21844PBF IR21844PBF Infineon Technologies ir2184.pdf?fileId=5546d462533600a4015355c955e616d4 description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 475 шт:
термін постачання 21-31 дні (днів)
90+226.14 грн
Мінімальне замовлення: 90
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IR21844PBF IR21844PBF Infineon Technologies ir2184.pdf?fileId=5546d462533600a4015355c955e616d4 description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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IRS25091SPBF IRS25091SPBF Infineon Technologies irs25091spbf.pdf?fileId=5546d462533600a40153567addd4281b Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IRFB3206GPBF IRFB3206GPBF Infineon Technologies irfb3206gpbf.pdf?fileId=5546d462533600a40153561550971df5 Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)
185+110.03 грн
Мінімальне замовлення: 185
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IMZC140R011M2HXKSA1 IMZC140R011M2HXKSA1 Infineon Technologies IMZC140R011M2HXKSA1 Description: IMZC140R011M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 147A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 69.1A, 18V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 21.7mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1400 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 1000 V
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TLE55493IC1LRXAMA1 Infineon Technologies Infineon-TLE55493IC1-DataSheet-v01_00-EN.pdf Description: SPEED SENS
Packaging: Tape & Box (TB)
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TLE55493IC1PW250XAMA1 Infineon Technologies Infineon-TLE55493IC1-DataSheet-v01_00-EN.pdf Description: SPEED SENS
Packaging: Tape & Box (TB)
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TLE55493IC1LR4HXAMA1 Infineon Technologies Infineon-TLE55493IC1-DataSheet-v01_00-EN.pdf Description: SPEED SENS
Packaging: Tape & Box (TB)
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FS01MR08A8MA2LMCHPSA1 Infineon Technologies Infineon-FS01MR08A8MA2-DataSheet-v01_00-EN.pdf Description: HYBRID PACK DRIVE G2 SIC
Packaging: Tray
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IRL3803STRRPBF IRL3803STRRPBF Infineon Technologies irl3803spbf.pdf?fileId=5546d462533600a40153565f89502556 Description: MOSFET N-CH 30V 140A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
189+107.33 грн
Мінімальне замовлення: 189
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TDA21591AUMA1 Infineon Technologies Description: IFX POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
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TDA21591AUMA1 Infineon Technologies Description: IFX POWERSTAGE/DRIVER
Packaging: Cut Tape (CT)
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TDA22561XUMA1 Infineon Technologies Description: POWERSTAGE CE
Packaging: Cut Tape (CT)
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TLI4971A050W2US0001XUMA1 TLI4971A050W2US0001XUMA1 Infineon Technologies infineon-tle4971-tli4971-datasheet-en.pdf Description: CURRENT SENS CONS & IND
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±1.7%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 30A
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
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TLI4971A050W2US0001XUMA1 TLI4971A050W2US0001XUMA1 Infineon Technologies infineon-tle4971-tli4971-datasheet-en.pdf Description: CURRENT SENS CONS & IND
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±1.7%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 30A
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
на замовлення 1484 шт:
термін постачання 21-31 дні (днів)
1+314.54 грн
5+271.32 грн
10+259.61 грн
25+230.63 грн
50+221.72 грн
100+213.55 грн
500+193.89 грн
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AUIRLR024N AUIRLR024N Infineon Technologies auirlr024n.pdf?fileId=5546d462533600a4015355bb194b155f Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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AUIRLR024NTRL AUIRLR024NTRL Infineon Technologies auirlr024n.pdf?fileId=5546d462533600a4015355bb194b155f Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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AUIRLR024Z AUIRLR024Z Infineon Technologies auirlr024z.pdf?fileId=5546d462533600a4015355bb21601561 Description: MOSFET N CH 55V 16A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
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IRG4BC10SD-SPBF IRG4BC10SD-SPBF Infineon Technologies irg4bc10sd-spbf.pdf?fileId=5546d462533600a40153563ef0f62241 Description: IGBT 600V 14A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 76ns/815ns
Switching Energy: 310µJ (on), 3.28mJ (off)
Test Condition: 480V, 8A, 100Ohm, 15V
Gate Charge: 15 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 38 W
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IR2103PBF IR2103PBF Infineon Technologies ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 8537 шт:
термін постачання 21-31 дні (днів)
150+135.01 грн
Мінімальне замовлення: 150
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IRF40DM229 IRF40DM229 Infineon Technologies Infineon-IRF40DM229-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a15c899160ea Description: MOSFET N-CH 40V 159A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 159A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 97A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5317 pF @ 25 V
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IRLU7843PBF IRLU7843PBF Infineon Technologies infineon-irlr7843-datasheet-en.pdf Description: MOSFET N-CH 30V 161A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
на замовлення 2090 шт:
термін постачання 21-31 дні (днів)
233+87.08 грн
Мінімальне замовлення: 233
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IRLU8729-701PBF IRLU8729-701PBF Infineon Technologies irlr8729pbf.pdf?fileId=5546d462533600a4015356718abb26fa Description: MOSFET N-CH 30V 58A IPAK
Packaging: Tube
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: I-PAK (LF701)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
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CYRF6986-40LTXC Infineon Technologies Description: IC RF TXRX ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: -5dBm
Current - Receiving: 21.2mA
Data Rate (Max): 1Mbps
Current - Transmitting: 26.2mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 3
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
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CY15V108QI-20LPXCT CY15V108QI-20LPXCT Infineon Technologies Infineon-CY15B108QI_CY15V108QI_Excelon(TM)_LP_8-Mbit_(1024K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee73ee37021 Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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KP215E1701XTMA1 KP215E1701XTMA1 Infineon Technologies infineon-kp215e1701-datasheet-en.pdf Description: KP215E1701XTMA1
Packaging: Tape & Reel (TR)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+171.40 грн
Мінімальне замовлення: 1500
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KP215E1701XTMA1 KP215E1701XTMA1 Infineon Technologies infineon-kp215e1701-datasheet-en.pdf Description: KP215E1701XTMA1
Packaging: Cut Tape (CT)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
2+261.99 грн
5+225.54 грн
10+215.65 грн
25+191.36 грн
50+183.79 грн
100+176.87 грн
500+160.25 грн
Мінімальне замовлення: 2
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AUIRG4BC30U-S AUIRG4BC30U-S Infineon Technologies AUIRG4BC30U-S%28L%29.pdf Description: IGBT 600V 23A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 360µJ
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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AUIRG4BC30USTRL AUIRG4BC30USTRL Infineon Technologies AUIRG4BC30U-S%28L%29.pdf Description: IGBT 600V 23A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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TDA6160-2S TDA6160-2S Infineon Technologies SIEMS02231-1.pdf?t.download=true&u=5oefqw Description: TDA6160 - MULTI-STANDARD SOUND I
Packaging: Bulk
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
143+141.76 грн
Мінімальне замовлення: 143
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38DN06B02ELEMXPSA1 38DN06B02ELEMXPSA1 Infineon Technologies Infineon-38DN06B02-DataSheet-v03_01-EN.pdf?fileId=5546d4627617cd8301763db79d7f2cb3 Description: DIODE STD 600V 5140A BGDELEM1
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5140A
Supplier Device Package: BG-D-ELEM-1
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4500 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
2+13418.56 грн
Мінімальне замовлення: 2
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38DN06B02ELEMPRXPSA1 38DN06B02ELEMPRXPSA1 Infineon Technologies infineon-38dn06b02-datasheet-en.pdf?fileId=5546d4627617cd8301763db79d7f2cb3 Description: DIODE STD 600V 5140A BGDELEM1
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5140A
Supplier Device Package: BG-D-ELEM-1
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4500 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
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ICE184LMXUMA1 infineon-ice184lm-datasheet-en.pdf?fileId=8ac78c8c962508060196807d2e400487
ICE184LMXUMA1
Виробник: Infineon Technologies
Description: ICE184LMXUMA1
Packaging: Cut Tape (CT)
Package / Case: 27-SMD Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Frequency - Switching: 150kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Isolated
Topology: Flyback, Secondary Side SR
Voltage - Supply (Vcc/Vdd): 9.45V ~ 32V
Supplier Device Package: PG-DSO-27-1
Fault Protection: Current Limiting, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 20 V
Control Features: EN, Soft Start
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+269.05 грн
10+195.18 грн
25+179.32 грн
100+151.94 грн
250+144.15 грн
500+143.23 грн
Мінімальне замовлення: 2
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REF45W1ZVS184EMTOBO2
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICE184EM
Packaging: Box
Voltage - Output: 12V, 15V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 3.75A, 150mA
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE184EM
Main Purpose: AC/DC Converter
Outputs and Type: 1 Isolated Output, 1 Non-Isolated Output
Power - Output: 45W
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7126.18 грн
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REF45W1ZVS184LMTOBO2
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICE184LM
Packaging: Box
Voltage - Output: 12V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 3.75A
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: ICE184LM
Main Purpose: AC/DC Converter
Outputs and Type: 1 Isolated Output
Power - Output: 45W
на замовлення 4 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+7126.18 грн
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REF60W1ZVS186EMTOBO2 PdfFile534889.pdf
REF60W1ZVS186EMTOBO2
Виробник: Infineon Technologies
Description: EVAL BOARD FOR ICE186EM
Packaging: Box
Voltage - Output: 12V, 15V
Voltage - Input: 90 ~ 264 VAC
Current - Output: 5A, 150mA
Contents: Board(s)
Frequency - Switching: 45Hz, 50Hz
Regulator Topology: Boost
Utilized IC / Part: ICE186EM
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output, 1 Non-Isolated Output
Power - Output: 60W
на замовлення 5 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+8854.98 грн
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TUA 6037F TUA%206039F-2%2C6037F.pdf
TUA 6037F
Виробник: Infineon Technologies
Description: IC VIDEO TUNER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Tuner
Voltage - Supply: 4.5V ~ 5.5V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: PG-VQFN-48
Control Interface: I2C
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TUA 6039 TUA%206039%28-2%29%2C6037.pdf
TUA 6039
Виробник: Infineon Technologies
Description: IC VIDEO TUNER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Tuner
Voltage - Supply: 3V ~ 5.5V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: PG-VQFN-48
Control Interface: I2C
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TUA 6039F-2 TUA%206039F-2%2C6037F.pdf
TUA 6039F-2
Виробник: Infineon Technologies
Description: IC VIDEO TUNER 48VQFN
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Tuner
Voltage - Supply: 4.5V ~ 5.5V
Applications: Consumer Video
Standards: NTSC, PAL
Supplier Device Package: PG-VQFN-48
Control Interface: I2C
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TUA 9001 TUA%209001.pdf
TUA 9001
Виробник: Infineon Technologies
Description: IC VIDEO TUNER 65WFSGA
Packaging: Tape & Reel (TR)
Package / Case: 65-WFBGA
Mounting Type: Surface Mount
Function: Tuner
Applications: Consumer Video
Supplier Device Package: PG-WFSGA-65
Control Interface: Analog Voltage
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IMCQ120R017M2HXTMA1 Infineon-IMCQ120R017M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194da4fa2fa4240
IMCQ120R017M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 118A 22PWRBSOP
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40A, 18V
Power Dissipation (Max): 580W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91.1 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3730 pF @ 800 V
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IMCQ120R017M2HXTMA1 Infineon-IMCQ120R017M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194da4fa2fa4240
IMCQ120R017M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 118A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 118A (Tc)
Rds On (Max) @ Id, Vgs: 17.1mOhm @ 40A, 18V
Power Dissipation (Max): 580W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 12.7mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 91.1 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3730 pF @ 800 V
на замовлення 168 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1317.77 грн
10+903.99 грн
100+799.28 грн
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IMCQ120R010M2HXTMA1 Infineon-IMCQ120R010M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194da4f964f423d
IMCQ120R010M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 195A 22PWRBSOP
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 69A, 18V
Power Dissipation (Max): 880W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 21.7mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 150.1 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 800 V
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IMCQ120R010M2HXTMA1 Infineon-IMCQ120R010M2H-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c93dda25b0194da4f964f423d
IMCQ120R010M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 195A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 69A, 18V
Power Dissipation (Max): 880W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 21.7mA
Supplier Device Package: PG-HDSOP-22
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 150.1 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 6320 pF @ 800 V
на замовлення 477 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2029.22 грн
10+1427.74 грн
100+1383.82 грн
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IMCQ120R040M2HXTMA1 DS_IMCQ120R040M2H_v1.00_en.pdf
IMCQ120R040M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 56A 22PWRBSOP
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-HDSOP-22-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 800 V
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IMCQ120R040M2HXTMA1 DS_IMCQ120R040M2H_v1.00_en.pdf
IMCQ120R040M2HXTMA1
Виробник: Infineon Technologies
Description: SICFET N-CH 1200V 56A 22PWRBSOP
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 39.6mOhm @ 17.5A, 18V
Power Dissipation (Max): 288W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 5.5mA
Supplier Device Package: PG-HDSOP-22-3
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 42.4 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 800 V
на замовлення 281 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+760.86 грн
10+505.85 грн
100+392.08 грн
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TLE9273QXXUMA2 Infineon-TLE9273QX-DataSheet-v02_00-EN.pdf?fileId=5546d46268554f4a01687fb220f74c5a
TLE9273QXXUMA2
Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 28V
Applications: System Basis Chip
Current - Supply: 5mA
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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TLE9273QXXUMA2 Infineon-TLE9273QX-DataSheet-v02_00-EN.pdf?fileId=5546d46268554f4a01687fb220f74c5a
TLE9273QXXUMA2
Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Cut Tape (CT)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 28V
Applications: System Basis Chip
Current - Supply: 5mA
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
на замовлення 2330 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+394.55 грн
10+290.81 грн
25+268.51 грн
100+228.98 грн
250+219.98 грн
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TLE9271QXV33XUMA2 Infineon-TLE9271QX%20V33-DataSheet-v02_00-EN.pdf?fileId=5546d46268554f4a0168854f82cf6859
TLE9271QXV33XUMA2
Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 28V
Applications: System Basis Chip
Current - Supply: 5mA
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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TLE9271QXXUMA2 Infineon-TLE9271QX-DataSheet-v02_00-EN.pdf?fileId=5546d46268554f4a016885465c676856
TLE9271QXXUMA2
Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 28V
Applications: System Basis Chip
Current - Supply: 5mA
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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TLE9272QXXUMA2 Infineon-TLE9272QX-DataSheet-v02_00-EN.pdf?fileId=5546d46268554f4a01688561d3be685c
TLE9272QXXUMA2
Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 28V
Applications: System Basis Chip
Current - Supply: 5mA
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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TLE9274QXXUMA3 Infineon-TLE9274QX-DataSheet-v02_00-EN.pdf?fileId=5546d4627762291e01776d60f54a7b82
TLE9274QXXUMA3
Виробник: Infineon Technologies
Description: OPTIREG SYST BASIS CHIPS
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: System Basis Chip
Supplier Device Package: PG-VQFN-48-31
Grade: Automotive
Qualification: AEC-Q100
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BAV70 Infineon-BAV70SERIES-DS-v01_01-en.pdf?fileId=db3a30431400ef6801141c0ba40e041d
Виробник: Infineon Technologies
Description: DIODE ARRAY GP 70V 200MA SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 µA @ 70 V
на замовлення 167566 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6045+3.38 грн
Мінімальне замовлення: 6045
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CYW20730A2KFBG CYW20730_RevJ_4-25-17.pdf
CYW20730A2KFBG
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 64FBGA
Packaging: Tray
Package / Case: 64-VFBGA
Sensitivity: -88dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx + MCU
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 1.2V
Power - Output: 4dBm
Protocol: Bluetooth v3.0
Current - Receiving: 26.6mA
Data Rate (Max): 1Mbps
Current - Transmitting: 19mA ~ 24mA
Supplier Device Package: 64-FBGA (7x7)
GPIO: 4
Modulation: GFSK
RF Family/Standard: Bluetooth
Serial Interfaces: I2C, SPI, UART
DigiKey Programmable: Not Verified
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CYW43455LXKUBGT Infineon-AIROC_CYW43455-DataSheet-v01_03-EN.pdf
CYW43455LXKUBGT
Виробник: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Tape & Reel (TR)
Package / Case: 140-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 845kB ROM, 270kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11ac, Bluetooth v4.1
Current - Receiving: 55mA
Data Rate (Max): 433.3Mbps
Current - Transmitting: 400mA
Supplier Device Package: 140-WLBGA (4.47x5.27)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+415.18 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
CYW43455LXKUBGT Infineon-AIROC_CYW43455-DataSheet-v01_03-EN.pdf
CYW43455LXKUBGT
Виробник: Infineon Technologies
Description: WI-FI COMBO IOT
Packaging: Cut Tape (CT)
Package / Case: 140-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Memory Size: 845kB ROM, 270kB RAM
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11ac, Bluetooth v4.1
Current - Receiving: 55mA
Data Rate (Max): 433.3Mbps
Current - Transmitting: 400mA
Supplier Device Package: 140-WLBGA (4.47x5.27)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+666.73 грн
10+500.64 грн
25+465.29 грн
100+400.23 грн
250+382.87 грн
500+372.40 грн
1000+357.82 грн
В кошику  од. на суму  грн.
CYW43455XKUBGT Infineon-CYW43455_Single-Chip_5G_WiFi_IEEE_802.11n_ac_MAC_Baseband_Radio_with_Integrated_Bluetooth_5.0_Datasheet-AdditionalTechnicalInformation-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee226686889
CYW43455XKUBGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 140WLBGA
Packaging: Tape & Reel (TR)
Package / Case: 140-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Current - Receiving: 55mA
Data Rate (Max): 433.3Mbps
Current - Transmitting: 400mA
Supplier Device Package: 140-WLBGA (4.47x5.27)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику  од. на суму  грн.
CYW43455XKUBGT Infineon-CYW43455_Single-Chip_5G_WiFi_IEEE_802.11n_ac_MAC_Baseband_Radio_with_Integrated_Bluetooth_5.0_Datasheet-AdditionalTechnicalInformation-v16_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee226686889
CYW43455XKUBGT
Виробник: Infineon Technologies
Description: IC RF TXRX+MCU BLE 140WLBGA
Packaging: Cut Tape (CT)
Package / Case: 140-UFBGA, WLBGA
Sensitivity: -95.5dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz, 5GHz
Type: TxRx + MCU
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 3.3V
Power - Output: 12dBm
Protocol: 802.11a/b/g/n, Bluetooth v4.1
Current - Receiving: 55mA
Data Rate (Max): 433.3Mbps
Current - Transmitting: 400mA
Supplier Device Package: 140-WLBGA (4.47x5.27)
GPIO: 15
Modulation: 8DPSK, DQPSK, GFSK
RF Family/Standard: Bluetooth, WiFi
Serial Interfaces: I2S, SPI, UART
DigiKey Programmable: Not Verified
на замовлення 4975 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+681.63 грн
10+570.05 грн
25+540.01 грн
100+468.02 грн
250+444.81 грн
500+428.43 грн
1000+406.23 грн
В кошику  од. на суму  грн.
IRLR2905ZTRLPBF irlr2905zpbf.pdf?fileId=5546d462533600a40153566ccc09267c
IRLR2905ZTRLPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 42A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 36A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 25 V
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IRFZ44VZPBF IRSDS11304-1.pdf?t.download=true&u=5oefqw
IRFZ44VZPBF
Виробник: Infineon Technologies
Description: IRFZ44 - 12V-300V N-CHANNEL POWE
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 92W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1690 pF @ 25 V
на замовлення 173 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
173+116.78 грн
Мінімальне замовлення: 173
В кошику  од. на суму  грн.
IR21844PBF description ir2184.pdf?fileId=5546d462533600a4015355c955e616d4
IR21844PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
на замовлення 475 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
90+226.14 грн
Мінімальне замовлення: 90
В кошику  од. на суму  грн.
IR21844PBF description ir2184.pdf?fileId=5546d462533600a4015355c955e616d4
IR21844PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 40ns, 20ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.7V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
DigiKey Programmable: Not Verified
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IRS25091SPBF irs25091spbf.pdf?fileId=5546d462533600a40153567addd4281b
IRS25091SPBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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IRFB3206GPBF irfb3206gpbf.pdf?fileId=5546d462533600a40153561550971df5
IRFB3206GPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 120A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 150µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 50 V
на замовлення 1495 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
185+110.03 грн
Мінімальне замовлення: 185
В кошику  од. на суму  грн.
IMZC140R011M2HXKSA1 IMZC140R011M2HXKSA1
IMZC140R011M2HXKSA1
Виробник: Infineon Technologies
Description: IMZC140R011M2HXKSA1
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 147A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 69.1A, 18V
Power Dissipation (Max): 568W (Tc)
Vgs(th) (Max) @ Id: 5.1V @ 21.7mA
Supplier Device Package: PG-TO247-4-17
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +23V, -7V
Drain to Source Voltage (Vdss): 1400 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 1000 V
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TLE55493IC1LRXAMA1 Infineon-TLE55493IC1-DataSheet-v01_00-EN.pdf
Виробник: Infineon Technologies
Description: SPEED SENS
Packaging: Tape & Box (TB)
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TLE55493IC1PW250XAMA1 Infineon-TLE55493IC1-DataSheet-v01_00-EN.pdf
Виробник: Infineon Technologies
Description: SPEED SENS
Packaging: Tape & Box (TB)
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TLE55493IC1LR4HXAMA1 Infineon-TLE55493IC1-DataSheet-v01_00-EN.pdf
Виробник: Infineon Technologies
Description: SPEED SENS
Packaging: Tape & Box (TB)
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FS01MR08A8MA2LMCHPSA1 Infineon-FS01MR08A8MA2-DataSheet-v01_00-EN.pdf
Виробник: Infineon Technologies
Description: HYBRID PACK DRIVE G2 SIC
Packaging: Tray
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IRL3803STRRPBF irl3803spbf.pdf?fileId=5546d462533600a40153565f89502556
IRL3803STRRPBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 140A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 71A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
на замовлення 298 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
189+107.33 грн
Мінімальне замовлення: 189
В кошику  од. на суму  грн.
TDA21591AUMA1
Виробник: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER
Packaging: Tape & Reel (TR)
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TDA21591AUMA1
Виробник: Infineon Technologies
Description: IFX POWERSTAGE/DRIVER
Packaging: Cut Tape (CT)
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TDA22561XUMA1
Виробник: Infineon Technologies
Description: POWERSTAGE CE
Packaging: Cut Tape (CT)
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TLI4971A050W2US0001XUMA1 infineon-tle4971-tli4971-datasheet-en.pdf
TLI4971A050W2US0001XUMA1
Виробник: Infineon Technologies
Description: CURRENT SENS CONS & IND
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±1.7%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 30A
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
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TLI4971A050W2US0001XUMA1 infineon-tle4971-tli4971-datasheet-en.pdf
TLI4971A050W2US0001XUMA1
Виробник: Infineon Technologies
Description: CURRENT SENS CONS & IND
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Polarization: Unidirectional
Sensitivity: 48mV/A
Mounting Type: Surface Mount
Output: Ratiometric, Voltage
Frequency: DC ~ 240kHz
Accuracy: ±3.45%
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3.1V ~ 3.5V
Response Time: 250ns
Sensor Type: Hall Effect, Open Loop
Linearity: ±1.7%
For Measuring: AC/DC
Current - Supply (Max): 25mA
Current - Sensing: 30A
Grade: Automotive
Number of Channels: 1
Qualification: AEC-Q100
на замовлення 1484 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+314.54 грн
5+271.32 грн
10+259.61 грн
25+230.63 грн
50+221.72 грн
100+213.55 грн
500+193.89 грн
В кошику  од. на суму  грн.
AUIRLR024N auirlr024n.pdf?fileId=5546d462533600a4015355bb194b155f
AUIRLR024N
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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AUIRLR024NTRL auirlr024n.pdf?fileId=5546d462533600a4015355bb194b155f
AUIRLR024NTRL
Виробник: Infineon Technologies
Description: MOSFET N-CH 55V 17A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 480 pF @ 25 V
Qualification: AEC-Q101
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AUIRLR024Z auirlr024z.pdf?fileId=5546d462533600a4015355bb21601561
AUIRLR024Z
Виробник: Infineon Technologies
Description: MOSFET N CH 55V 16A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 58mOhm @ 9.6A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 9.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 25 V
Qualification: AEC-Q101
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IRG4BC10SD-SPBF irg4bc10sd-spbf.pdf?fileId=5546d462533600a40153563ef0f62241
IRG4BC10SD-SPBF
Виробник: Infineon Technologies
Description: IGBT 600V 14A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 76ns/815ns
Switching Energy: 310µJ (on), 3.28mJ (off)
Test Condition: 480V, 8A, 100Ohm, 15V
Gate Charge: 15 nC
Current - Collector (Ic) (Max): 14 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 38 W
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IR2103PBF ir2103.pdf?fileId=5546d462533600a4015355c7b54b166f
IR2103PBF
Виробник: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting, Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 100ns, 50ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 3V
Current - Peak Output (Source, Sink): 210mA, 360mA
DigiKey Programmable: Not Verified
на замовлення 8537 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
150+135.01 грн
Мінімальне замовлення: 150
В кошику  од. на суму  грн.
IRF40DM229 Infineon-IRF40DM229-DS-v02_00-EN.pdf?fileId=5546d462557e6e890155a15c899160ea
IRF40DM229
Виробник: Infineon Technologies
Description: MOSFET N-CH 40V 159A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MF
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 159A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 97A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 100µA
Supplier Device Package: DirectFET™ Isometric MF
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 161 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5317 pF @ 25 V
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IRLU7843PBF infineon-irlr7843-datasheet-en.pdf
IRLU7843PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 161A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 161A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 15A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: IPAK (TO-251AA)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4380 pF @ 15 V
на замовлення 2090 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
233+87.08 грн
Мінімальне замовлення: 233
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IRLU8729-701PBF irlr8729pbf.pdf?fileId=5546d462533600a4015356718abb26fa
IRLU8729-701PBF
Виробник: Infineon Technologies
Description: MOSFET N-CH 30V 58A IPAK
Packaging: Tube
Package / Case: TO-252-4, DPak (3 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 8.9mOhm @ 25A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Supplier Device Package: I-PAK (LF701)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
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CYRF6986-40LTXC
Виробник: Infineon Technologies
Description: IC RF TXRX ISM>1GHZ 40QFN
Packaging: Tray
Package / Case: 40-VFQFN Exposed Pad
Sensitivity: -90dBm
Mounting Type: Surface Mount
Frequency: 2.4GHz
Type: TxRx Only
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 2.7V ~ 3.6V
Power - Output: -5dBm
Current - Receiving: 21.2mA
Data Rate (Max): 1Mbps
Current - Transmitting: 26.2mA
Supplier Device Package: 40-QFN (6x6)
GPIO: 3
Modulation: DSSS, GFSK
RF Family/Standard: General ISM > 1GHz
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
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CY15V108QI-20LPXCT Infineon-CY15B108QI_CY15V108QI_Excelon(TM)_LP_8-Mbit_(1024K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee73ee37021
CY15V108QI-20LPXCT
Виробник: Infineon Technologies
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 20 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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KP215E1701XTMA1 infineon-kp215e1701-datasheet-en.pdf
KP215E1701XTMA1
Виробник: Infineon Technologies
Description: KP215E1701XTMA1
Packaging: Tape & Reel (TR)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+171.40 грн
Мінімальне замовлення: 1500
В кошику  од. на суму  грн.
KP215E1701XTMA1 infineon-kp215e1701-datasheet-en.pdf
KP215E1701XTMA1
Виробник: Infineon Technologies
Description: KP215E1701XTMA1
Packaging: Cut Tape (CT)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+261.99 грн
5+225.54 грн
10+215.65 грн
25+191.36 грн
50+183.79 грн
100+176.87 грн
500+160.25 грн
Мінімальне замовлення: 2
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AUIRG4BC30U-S AUIRG4BC30U-S%28L%29.pdf
AUIRG4BC30U-S
Виробник: Infineon Technologies
Description: IGBT 600V 23A 100W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 360µJ
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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AUIRG4BC30USTRL AUIRG4BC30U-S%28L%29.pdf
AUIRG4BC30USTRL
Виробник: Infineon Technologies
Description: IGBT 600V 23A 100W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 17ns/78ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 480V, 12A, 23Ohm, 15V
Gate Charge: 50 nC
Current - Collector (Ic) (Max): 23 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 92 A
Power - Max: 100 W
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TDA6160-2S SIEMS02231-1.pdf?t.download=true&u=5oefqw
TDA6160-2S
Виробник: Infineon Technologies
Description: TDA6160 - MULTI-STANDARD SOUND I
Packaging: Bulk
на замовлення 540 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
143+141.76 грн
Мінімальне замовлення: 143
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38DN06B02ELEMXPSA1 Infineon-38DN06B02-DataSheet-v03_01-EN.pdf?fileId=5546d4627617cd8301763db79d7f2cb3
38DN06B02ELEMXPSA1
Виробник: Infineon Technologies
Description: DIODE STD 600V 5140A BGDELEM1
Packaging: Bulk
Package / Case: DO-200AC, K-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5140A
Supplier Device Package: BG-D-ELEM-1
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4500 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
на замовлення 12 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+13418.56 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
38DN06B02ELEMPRXPSA1 infineon-38dn06b02-datasheet-en.pdf?fileId=5546d4627617cd8301763db79d7f2cb3
38DN06B02ELEMPRXPSA1
Виробник: Infineon Technologies
Description: DIODE STD 600V 5140A BGDELEM1
Packaging: Tray
Package / Case: DO-200AA, A-PUK
Mounting Type: Clamp On
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 5140A
Supplier Device Package: BG-D-ELEM-1
Operating Temperature - Junction: 180°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4500 A
Current - Reverse Leakage @ Vr: 50 mA @ 600 V
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