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LCA100 LCA100 IXYS LCA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: THT
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
1+583.14 грн
50+355.27 грн
250+284.90 грн
В кошику  од. на суму  грн.
LCA100L LCA100L IXYS LCA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: THT
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
1+604.40 грн
50+368.14 грн
250+296.06 грн
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LCA100S LCA100S IXYS LCA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: SMT
на замовлення 120 шт:
термін постачання 14-30 дні (днів)
2+405.71 грн
50+345.83 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
LCA100LS LCA100LS IXYS LCA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: SMT
на замовлення 82 шт:
термін постачання 14-30 дні (днів)
2+441.75 грн
10+331.24 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DPJ50XS1800NA IXYS Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 25Ax2; SOT227B; screw
Reverse recovery time: 30ns
Max. forward impulse current: 250A
Type of semiconductor module: diode
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 25A x2
Max. load current: 50A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
товару немає в наявності
 Мінімальне замовлення: 100 шт
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IXTH4N150 IXTH4N150 IXYS IXTH4N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO247-3
On-state resistance: 6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Gate charge: 44.5nC
Features of semiconductor devices: standard power mosfet
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IXTA4N150HV IXTA4N150HV IXYS IXTA(T)4N150HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Gate charge: 44.5nC
Features of semiconductor devices: standard power mosfet
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IXTJ4N150 IXTJ4N150 IXYS IXTJ4N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 110W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Gate charge: 44.5nC
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IXTT4N150HV IXTT4N150HV IXYS IXTA(T)4N150HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO268HV
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Gate charge: 44.5nC
Features of semiconductor devices: standard power mosfet
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FUO50-16N FUO50-16N IXYS FUO50-16N.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Case: ISOPLUS i4-pac™ x024a
Max. forward impulse current: 270A
Max. forward voltage: 1.04V
Max. off-state voltage: 1.6kV
Electrical mounting: THT
Load current: 50A
Type of bridge rectifier: three-phase
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
1+1661.63 грн
2+1458.85 грн
5+1445.12 грн
10+1403.07 грн
В кошику  од. на суму  грн.
IXFH20N80P IXFH20N80P IXYS IXFH(T,V)20N80P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 245 шт:
термін постачання 14-30 дні (днів)
1+914.92 грн
2+550.07 грн
5+520.04 грн
30+499.44 грн
В кошику  од. на суму  грн.
IXFR20N80P IXFR20N80P IXYS IXFR20N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 160W
Case: ISOPLUS247™
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
1+776.29 грн
3+471.12 грн
6+445.38 грн
В кошику  од. на суму  грн.
IXFT20N80P IXFT20N80P IXYS IXFH(T,V)20N80P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Case: TO268
Drain current: 20A
Power dissipation: 500W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 0.52Ω
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IXFR44N50Q3 IXFR44N50Q3 IXYS IXFR44N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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IXFR48N60Q3 IXFR48N60Q3 IXYS IXFR48N60Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 500W; ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Gate charge: 0.14µC
On-state resistance: 154mΩ
Power dissipation: 500W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
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MMIX1T600N04T2MMIX1T600N04T2
MMIX1T600N04T2MMIX1T600N04T2
 MMIX1T600N04T2 IXYS littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Kind of channel: enhancement
Mounting: SMD
Technology: GigaMOS™; TrenchT2™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 590nC
On-state resistance: 1.3mΩ
Drain current: 600A
Power dissipation: 830W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 2kA
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
1+2887.07 грн
3+2371.06 грн
10+2129.92 грн
В кошику  од. на суму  грн.
DSS2X121-0045B DSS2X121-0045B IXYS DSS2x121-0045B.pdf description Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.59V
Max. off-state voltage: 45V
Load current: 120A x2
Max. load current: 240A
Max. forward impulse current: 1.6kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS2X101-02A DSS2X101-02A IXYS DSS2x101-02A.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.84V
Max. off-state voltage: 200V
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
 Мінімальне замовлення: 100 шт
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DSS2X101-015A DSS2X101-015A IXYS DSS2X101-015A.pdf description Category: Diode modules
Description: Module: diode; double independent; 150V; If: 100Ax2; SOT227B; screw
Case: SOT227B
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Max. off-state voltage: 150V
Electrical mounting: screw
Load current: 100A x2
Max. load current: 200A
Kind of package: tube
Semiconductor structure: double independent
Max. forward impulse current: 1.4kA
Max. forward voltage: 0.99V
Type of semiconductor module: diode
товару немає в наявності
 Мінімальне замовлення: 100 шт
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DSS2X61-01A DSS2X61-01A IXYS DSS2x61-01A.pdf Category: Diode modules
Description: Module: diode; double independent; 100V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.74V
Max. off-state voltage: 0.1kV
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 700A
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
 Мінімальне замовлення: 100 шт
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DSS2X41-01A DSS2X41-01A IXYS DSS2x41-01A.pdf description Category: Diode modules
Description: Module: diode; double independent; 100V; If: 40Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.7V
Max. off-state voltage: 0.1kV
Load current: 40A x2
Max. load current: 80A
Max. forward impulse current: 0.45kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
 Мінімальне замовлення: 100 шт
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DSS2X61-0045A DSS2X61-0045A IXYS DSS2x61-0045A.pdf description Category: Diode modules
Description: Module: diode; double independent; 45V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.65V
Max. off-state voltage: 45V
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
 Мінімальне замовлення: 100 шт
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DSS2X111-008A DSS2X111-008A IXYS DSS2x111-008A.pdf Category: Diode modules
Description: Module: diode; double independent; 80V; If: 110Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.72V
Max. off-state voltage: 80V
Load current: 110A x2
Max. load current: 220A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
 Мінімальне замовлення: 100 шт
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DSS20-0015B DSS20-0015B IXYS DSS20-0015B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20A; TO220AC; Ufmax: 0.33V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AC
Max. forward voltage: 0.33V
Power dissipation: 90W
Max. off-state voltage: 15V
Load current: 20A
Max. forward impulse current: 0.3kA
Semiconductor structure: single diode
товару немає в наявності
 Мінімальне замовлення: 8000 шт
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DSS2X160-0045A DSS2X160-0045A IXYS DSS2X160-0045A.pdf Category: Diode modules
Description: Module: diode; double,common cathode; 45V; If: 160Ax2; SOT227B
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.73V
Max. off-state voltage: 45V
Load current: 160A x2
Max. load current: 320A
Max. forward impulse current: 1.6kA
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
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DSS2X81-0045B DSS2X81-0045B IXYS DSS2x81-0045B.pdf Category: Diode modules
Description: Module: diode; double independent; 45V; If: 80Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.63V
Max. off-state voltage: 45V
Load current: 80A x2
Max. load current: 160A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
 Мінімальне замовлення: 100 шт
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IXTN110N20L2 IXTN110N20L2 IXYS IXTN110N20L2.pdf Category: Transistor modules
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 100A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 24mΩ
Pulsed drain current: 275A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 500nC
Reverse recovery time: 420ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTK110N20L2 IXTK110N20L2 IXYS IXT_110N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
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IXTX110N20L2 IXTX110N20L2 IXYS IXT_110N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Technology: Linear L2™
Gate-source voltage: ±20V
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IXTP3N100D2 IXTP3N100D2 IXYS IXTA(P)3N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Gate charge: 1.02µC
на замовлення 149 шт:
термін постачання 14-30 дні (днів)
2+454.69 грн
6+165.62 грн
17+156.18 грн
Мінімальне замовлення: 2 шт
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IXTH3N100P IXTH3N100P IXYS IXTA(H,P)3N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO247-3
Reverse recovery time: 820ns
Power dissipation: 125W
Gate charge: 36nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXTA3N100D2 IXTA3N100D2 IXYS IXTA(P)3N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
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IXTA3N100D2HV IXTA3N100D2HV IXYS IXTA3N100D2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
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IXTA3N100P IXTA3N100P IXYS IXTA(H,P)3N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO263
Reverse recovery time: 820ns
Power dissipation: 125W
Gate charge: 36nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXTP3N100P IXTP3N100P IXYS IXTA(H,P)3N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 820ns
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO220AB
Reverse recovery time: 820ns
Power dissipation: 125W
Gate charge: 36nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1kV
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFP18N65X2M IXFP18N65X2M IXYS IXFP18N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFA18N65X2 IXFA18N65X2 IXYS IXF_18N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH18N65X2 IXFH18N65X2 IXYS IXF_18N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFP18N65X2 IXFP18N65X2 IXYS IXF_18N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ76N25T IXTQ76N25T IXYS IXTA(H,I,P,Q)76N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO3P
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
2+438.97 грн
10+296.92 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PM1204 PM1204 IXYS PM1204.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
1+1005.48 грн
2+491.72 грн
6+465.12 грн
В кошику  од. на суму  грн.
IXFH26N50 IXFH26N50 IXYS 91525.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH26N50P IXFH26N50P IXYS IXFH26N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTY02N120P IXTY02N120P IXYS IXTP(Y)02N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.2A
Power dissipation: 33W
Case: TO252
On-state resistance: 75Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1.6µs
Features of semiconductor devices: standard power mosfet
товару немає в наявності
 Мінімальне замовлення: 350 шт
В кошику  од. на суму  грн.
IXTP02N120P IXTP02N120P IXYS IXTP(Y)02N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO220AB
Mounting: THT
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Kind of package: tube
On-state resistance: 75Ω
Reverse recovery time: 1.6µs
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
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В кошику  од. на суму  грн.
IXFH40N85X IXFH40N85X IXYS IXF_40N85X_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 40A; 860W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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В кошику  од. на суму  грн.
CPC1030N CPC1030N IXYS CPC1030N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 30Ω
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Turn-off time: 1ms
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
на замовлення 111 шт:
термін постачання 14-30 дні (днів)
2+274.47 грн
5+197.37 грн
14+186.22 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CPC1030NTR CPC1030NTR IXYS CPC1030N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CPC1009NTR CPC1009NTR IXYS CPC1009N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 0.5ms
Operating temperature: -40...85°C
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CPC1006NTR CPC1006NTR IXYS CPC1006N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Operating temperature: -40...85°C
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
DSSK10-018A DSSK10-018A IXYS DSSK10-018A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 180V; 5Ax2; TO220AB; Ufmax: 0.62V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 180V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.62V
Max. forward impulse current: 120A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
5+97.96 грн
6+82.38 грн
10+72.94 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
CPC1976YX6 CPC1976YX6 IXYS CPC1976YX6.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 500µs
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: SIP4
Max. operating current: 2A
Control current max.: 50mA
товару немає в наявності
 Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IXSH80N120L2KHV IXYS IXSH80N120L2KHV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Pulsed drain current: 198A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
товару немає в наявності
 Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
DSEP30-12A DSEP30-12A IXYS DSEP30-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO247-2; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.79V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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В кошику  од. на суму  грн.
DSEP30-12CR DSEP30-12CR IXYS media?resourcetype=datasheets&itemid=4c065f49-4633-4e89-8717-37676123569f&filename=Littelfuse-Power-Semiconductors-DSEP30-12CR-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 250A; ISOPLUS247™; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 4.98V
Power dissipation: 250W
Technology: HiPerDynFRED
Features of semiconductor devices: fast switching
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 15ns
Mounting: THT
на замовлення 213 шт:
термін постачання 14-30 дні (днів)
1+907.52 грн
3+771.47 грн
10+636.74 грн
30+577.53 грн
В кошику  од. на суму  грн.
DSEP30-12AR DSEP30-12AR IXYS DSEP30-12AR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; ISOPLUS247™; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: ISOPLUS247™
Kind of package: tube
Max. forward voltage: 1.79V
Power dissipation: 135W
Reverse recovery time: 40ns
Technology: HiPerFRED™
на замовлення 200 шт:
термін постачання 14-30 дні (днів)
1+584.99 грн
5+498.58 грн
10+432.51 грн
В кошику  од. на суму  грн.
DSEP30-12B DSEP30-12B IXYS DSEP30-12B.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 3.75V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
товару немає в наявності
В кошику  од. на суму  грн.
IXFL100N50P IXFL100N50P IXYS IXFL100N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™
Case: ISOPLUS264™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 240nC
On-state resistance: 52mΩ
Drain current: 68A
Power dissipation: 625W
Drain-source voltage: 500V
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
MDD44-18N1B MDD44-18N1B IXYS MDD44-18N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Kind of package: bulk
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
1+1987.86 грн
10+1673.38 грн
В кошику  од. на суму  грн.
DSP8-08A DSP8-08A IXYS Littelfuse-Power-Semiconductors-DSP8-08A-Datasheet?assetguid=cb034645-c550-4ca3-9793-0552505757de Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 120A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.16V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 148 шт:
термін постачання 14-30 дні (днів)
3+205.16 грн
10+152.75 грн
50+125.29 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
LCA100 LCA100.pdf
LCA100
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: THT
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+583.14 грн
50+355.27 грн
250+284.90 грн
В кошику  од. на суму  грн.
LCA100L LCA100L.pdf
LCA100L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: THT
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+604.40 грн
50+368.14 грн
250+296.06 грн
В кошику  од. на суму  грн.
LCA100S LCA100.pdf
LCA100S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: SMT
на замовлення 120 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+405.71 грн
50+345.83 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
LCA100LS LCA100L.pdf
LCA100LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 120mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 25Ω
Type of relay: solid state
Mounting: SMT
на замовлення 82 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+441.75 грн
10+331.24 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DPJ50XS1800NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.8kV; If: 25Ax2; SOT227B; screw
Reverse recovery time: 30ns
Max. forward impulse current: 250A
Type of semiconductor module: diode
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 1.8kV
Electrical mounting: screw
Load current: 25A x2
Max. load current: 50A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
IXTH4N150 IXTH4N150.pdf
IXTH4N150
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO247-3; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO247-3
On-state resistance: 6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Gate charge: 44.5nC
Features of semiconductor devices: standard power mosfet
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IXTA4N150HV IXTA(T)4N150HV.pdf
IXTA4N150HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO263; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Gate charge: 44.5nC
Features of semiconductor devices: standard power mosfet
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IXTJ4N150 IXTJ4N150.pdf
IXTJ4N150
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 2.5A; 110W; ISO247™; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 2.5A
Power dissipation: 110W
Case: ISO247™
Gate-source voltage: ±30V
On-state resistance: 6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Gate charge: 44.5nC
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IXTT4N150HV IXTA(T)4N150HV.pdf
IXTT4N150HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 4A; 280W; TO268HV; 900ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 280W
Case: TO268HV
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 900ns
Gate charge: 44.5nC
Features of semiconductor devices: standard power mosfet
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FUO50-16N FUO50-16N.pdf
FUO50-16N
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 50A; Ifsm: 270A
Case: ISOPLUS i4-pac™ x024a
Max. forward impulse current: 270A
Max. forward voltage: 1.04V
Max. off-state voltage: 1.6kV
Electrical mounting: THT
Load current: 50A
Type of bridge rectifier: three-phase
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1661.63 грн
2+1458.85 грн
5+1445.12 грн
10+1403.07 грн
В кошику  од. на суму  грн.
IXFH20N80P IXFH(T,V)20N80P_S.pdf
IXFH20N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 20A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 245 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+914.92 грн
2+550.07 грн
5+520.04 грн
30+499.44 грн
В кошику  од. на суму  грн.
IXFR20N80P IXFR20N80P.pdf
IXFR20N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 160W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 160W
Case: ISOPLUS247™
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+776.29 грн
3+471.12 грн
6+445.38 грн
В кошику  од. на суму  грн.
IXFT20N80P IXFH(T,V)20N80P_S.pdf
IXFT20N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 500W; TO268
Case: TO268
Drain current: 20A
Power dissipation: 500W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 86nC
On-state resistance: 0.52Ω
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IXFR44N50Q3 IXFR44N50Q3.pdf
IXFR44N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 25A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 25A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 154mΩ
Mounting: THT
Gate charge: 93nC
Kind of package: tube
Kind of channel: enhancement
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IXFR48N60Q3 IXFR48N60Q3.pdf
IXFR48N60Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 32A; 500W; ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 32A
Gate charge: 0.14µC
On-state resistance: 154mΩ
Power dissipation: 500W
Case: ISOPLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
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MMIX1T600N04T2 littelfuse_discrete_mosfets_smpd_packages_mmix1t600n04t2_datasheet.pdf.pdf
MMIX1T600N04T2MMIX1T600N04T2
MMIX1T600N04T2MMIX1T600N04T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 40V; 600A; Idm: 2kA; 830W
Case: SMPD
Kind of channel: enhancement
Mounting: SMD
Technology: GigaMOS™; TrenchT2™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 100ns
Gate charge: 590nC
On-state resistance: 1.3mΩ
Drain current: 600A
Power dissipation: 830W
Gate-source voltage: ±20V
Drain-source voltage: 40V
Pulsed drain current: 2kA
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2887.07 грн
3+2371.06 грн
10+2129.92 грн
В кошику  од. на суму  грн.
DSS2X121-0045B description DSS2x121-0045B.pdf
DSS2X121-0045B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.59V
Max. off-state voltage: 45V
Load current: 120A x2
Max. load current: 240A
Max. forward impulse current: 1.6kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS2X101-02A DSS2x101-02A.pdf
DSS2X101-02A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.84V
Max. off-state voltage: 200V
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
DSS2X101-015A description DSS2X101-015A.pdf
DSS2X101-015A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 100Ax2; SOT227B; screw
Case: SOT227B
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Max. off-state voltage: 150V
Electrical mounting: screw
Load current: 100A x2
Max. load current: 200A
Kind of package: tube
Semiconductor structure: double independent
Max. forward impulse current: 1.4kA
Max. forward voltage: 0.99V
Type of semiconductor module: diode
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Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
DSS2X61-01A DSS2x61-01A.pdf
DSS2X61-01A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.74V
Max. off-state voltage: 0.1kV
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 700A
Semiconductor structure: double independent
Type of semiconductor module: diode
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Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
DSS2X41-01A description DSS2x41-01A.pdf
DSS2X41-01A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 40Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.7V
Max. off-state voltage: 0.1kV
Load current: 40A x2
Max. load current: 80A
Max. forward impulse current: 0.45kA
Semiconductor structure: double independent
Type of semiconductor module: diode
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
DSS2X61-0045A description DSS2x61-0045A.pdf
DSS2X61-0045A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.65V
Max. off-state voltage: 45V
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
DSS2X111-008A DSS2x111-008A.pdf
DSS2X111-008A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 80V; If: 110Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.72V
Max. off-state voltage: 80V
Load current: 110A x2
Max. load current: 220A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
DSS20-0015B DSS20-0015B.pdf
DSS20-0015B
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20A; TO220AC; Ufmax: 0.33V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AC
Max. forward voltage: 0.33V
Power dissipation: 90W
Max. off-state voltage: 15V
Load current: 20A
Max. forward impulse current: 0.3kA
Semiconductor structure: single diode
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику  од. на суму  грн.
DSS2X160-0045A DSS2X160-0045A.pdf
DSS2X160-0045A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 45V; If: 160Ax2; SOT227B
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.73V
Max. off-state voltage: 45V
Load current: 160A x2
Max. load current: 320A
Max. forward impulse current: 1.6kA
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
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DSS2X81-0045B DSS2x81-0045B.pdf
DSS2X81-0045B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 80Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.63V
Max. off-state voltage: 45V
Load current: 80A x2
Max. load current: 160A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
IXTN110N20L2 IXTN110N20L2.pdf
IXTN110N20L2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 100A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 24mΩ
Pulsed drain current: 275A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 500nC
Reverse recovery time: 420ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXTK110N20L2 IXT_110N20L2.pdf
IXTK110N20L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 420ns
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IXTX110N20L2 IXT_110N20L2.pdf
IXTX110N20L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Technology: Linear L2™
Gate-source voltage: ±20V
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IXTP3N100D2 IXTA(P)3N100D2.pdf
IXTP3N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
Gate charge: 1.02µC
на замовлення 149 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+454.69 грн
6+165.62 грн
17+156.18 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTH3N100P IXTA(H,P)3N100P.pdf
IXTH3N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO247-3
Reverse recovery time: 820ns
Power dissipation: 125W
Gate charge: 36nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXTA3N100D2 IXTA(P)3N100D2.pdf
IXTA3N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
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IXTA3N100D2HV IXTA3N100D2HV.pdf
IXTA3N100D2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.02µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 17ns
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IXTA3N100P IXTA(H,P)3N100P.pdf
IXTA3N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO263
Reverse recovery time: 820ns
Power dissipation: 125W
Gate charge: 36nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1kV
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IXTP3N100P IXTA(H,P)3N100P.pdf
IXTP3N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 820ns
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Case: TO220AB
Reverse recovery time: 820ns
Power dissipation: 125W
Gate charge: 36nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1kV
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Мінімальне замовлення: 300 шт
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IXFP18N65X2M IXFP18N65X2M.pdf
IXFP18N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFA18N65X2 IXF_18N65X2.pdf
IXFA18N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFH18N65X2 IXF_18N65X2.pdf
IXFH18N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFP18N65X2 IXF_18N65X2.pdf
IXFP18N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXTQ76N25T IXTA(H,I,P,Q)76N25T.pdf
IXTQ76N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO3P
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+438.97 грн
10+296.92 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PM1204 PM1204.pdf
PM1204
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1005.48 грн
2+491.72 грн
6+465.12 грн
В кошику  од. на суму  грн.
IXFH26N50 91525.pdf
IXFH26N50
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXFH26N50P IXFH26N50P.pdf
IXFH26N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTY02N120P IXTP(Y)02N120P.pdf
IXTY02N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 0.2A
Power dissipation: 33W
Case: TO252
On-state resistance: 75Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1.6µs
Features of semiconductor devices: standard power mosfet
товару немає в наявності
Мінімальне замовлення: 350 шт
В кошику  од. на суму  грн.
IXTP02N120P IXTP(Y)02N120P.pdf
IXTP02N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO220AB
Mounting: THT
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Kind of package: tube
On-state resistance: 75Ω
Reverse recovery time: 1.6µs
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
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IXFH40N85X IXF_40N85X_HV.pdf
IXFH40N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 40A; 860W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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CPC1030N CPC1030N.pdf
CPC1030N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 30Ω
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 1.5kV
Turn-on time: 2ms
Switched voltage: max. 350V AC; max. 350V DC
Max. operating current: 120mA
Turn-off time: 1ms
Control current max.: 50mA
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 4.09x3.81x2.03mm
на замовлення 111 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+274.47 грн
5+197.37 грн
14+186.22 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CPC1030NTR CPC1030N.pdf
CPC1030NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CPC1009NTR CPC1009N.pdf
CPC1009NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 100V AC; max. 100V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 0.5ms
Operating temperature: -40...85°C
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
CPC1006NTR CPC1006N.pdf
CPC1006NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 75mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 10Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Operating temperature: -40...85°C
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
DSSK10-018A DSSK10-018A.pdf
DSSK10-018A
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 180V; 5Ax2; TO220AB; Ufmax: 0.62V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 180V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.62V
Max. forward impulse current: 120A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
5+97.96 грн
6+82.38 грн
10+72.94 грн
Мінімальне замовлення: 5 шт
В кошику  од. на суму  грн.
CPC1976YX6 CPC1976YX6.pdf
CPC1976YX6
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.600VAC; 1-phase
Type of relay: solid state
Mounting: THT
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Insulation voltage: 3.75kV
Turn-on time: 500µs
Switching method: zero voltage switching
Switched voltage: max. 600V AC
Case: SIP4
Max. operating current: 2A
Control current max.: 50mA
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
IXSH80N120L2KHV IXSH80N120L2KHV.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Pulsed drain current: 198A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
товару немає в наявності
Мінімальне замовлення: 30 шт
В кошику  од. на суму  грн.
DSEP30-12A DSEP30-12A.pdf
DSEP30-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO247-2; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: TO247-2
Kind of package: tube
Max. forward voltage: 1.79V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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DSEP30-12CR media?resourcetype=datasheets&itemid=4c065f49-4633-4e89-8717-37676123569f&filename=Littelfuse-Power-Semiconductors-DSEP30-12CR-Datasheet
DSEP30-12CR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 250A; ISOPLUS247™; tube
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 4.98V
Power dissipation: 250W
Technology: HiPerDynFRED
Features of semiconductor devices: fast switching
Kind of package: tube
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 15ns
Mounting: THT
на замовлення 213 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+907.52 грн
3+771.47 грн
10+636.74 грн
30+577.53 грн
В кошику  од. на суму  грн.
DSEP30-12AR DSEP30-12AR.pdf
DSEP30-12AR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; ISOPLUS247™; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: ISOPLUS247™
Kind of package: tube
Max. forward voltage: 1.79V
Power dissipation: 135W
Reverse recovery time: 40ns
Technology: HiPerFRED™
на замовлення 200 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+584.99 грн
5+498.58 грн
10+432.51 грн
В кошику  од. на суму  грн.
DSEP30-12B DSEP30-12B.pdf
DSEP30-12B
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 3.75V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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IXFL100N50P IXFL100N50P.pdf
IXFL100N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™
Case: ISOPLUS264™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 240nC
On-state resistance: 52mΩ
Drain current: 68A
Power dissipation: 625W
Drain-source voltage: 500V
Kind of package: tube
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MDD44-18N1B MDD44-18N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDD44-18N1B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Kind of package: bulk
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1987.86 грн
10+1673.38 грн
В кошику  од. на суму  грн.
DSP8-08A Littelfuse-Power-Semiconductors-DSP8-08A-Datasheet?assetguid=cb034645-c550-4ca3-9793-0552505757de
DSP8-08A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 120A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.16V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 148 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+205.16 грн
10+152.75 грн
50+125.29 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.