| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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LCA127L | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC Max. operating current: 200mA Body dimensions: 8.38x6.35x3.3mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Kind of output: MOSFET Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO Switched voltage: max. 350V AC; max. 350V DC Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA On-state resistance: 10Ω Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP6 |
на замовлення 65 шт: термін постачання 14-30 дні (днів) |
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LCA127S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC Max. operating current: 200mA Body dimensions: 8.38x6.35x3.3mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Kind of output: MOSFET Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO Switched voltage: max. 350V AC; max. 350V DC Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA On-state resistance: 10Ω Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP6 |
на замовлення 58 шт: термін постачання 14-30 дні (днів) |
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LCB127 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC Max. operating current: 200mA Body dimensions: 8.38x6.35x3.3mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Kind of output: MOSFET Mounting: THT Type of relay: solid state Contacts configuration: SPST-NC Switched voltage: max. 250V AC; max. 250V DC Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA On-state resistance: 10Ω Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP6 |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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LCA127 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC Max. operating current: 200mA Body dimensions: 8.38x6.35x3.3mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Kind of output: MOSFET Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO Switched voltage: max. 350V AC; max. 350V DC Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA On-state resistance: 10Ω Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP6 |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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LCB127S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC Max. operating current: 200mA Body dimensions: 8.38x6.35x3.3mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Kind of output: MOSFET Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NC Switched voltage: max. 250V AC; max. 250V DC Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA On-state resistance: 10Ω Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP6 |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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CS60-16IO1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.6kV; Ifmax: 75A; 60A; Igt: 200mA; PLUS247™; THT; tube Type of thyristor: thyristor Mounting: THT Gate current: 200mA Max. load current: 75A Max. forward impulse current: 1.4A Load current: 60A Max. off-state voltage: 1.6kV Case: PLUS247™ Kind of package: tube |
на замовлення 186 шт: термін постачання 14-30 дні (днів) |
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LBB127P | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS Max. operating current: 200mA Body dimensions: 9.66x6.35x2.16mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Kind of output: MOSFET Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NC x2 Switched voltage: max. 250V AC; max. 250V DC Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA On-state resistance: 10Ω Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 |
на замовлення 80 шт: термін постачання 14-30 дні (днів) |
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CS60-14io1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.4kV; Ifmax: 75A; 60A; Igt: 200mA; ISOPLUS247™; THT; tube Type of thyristor: thyristor Mounting: THT Gate current: 200mA Max. load current: 75A Max. forward impulse current: 1.4A Load current: 60A Max. off-state voltage: 1.4kV Case: ISOPLUS247™ Kind of package: tube |
на замовлення 24 шт: термін постачання 14-30 дні (днів) |
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PAA127 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS Max. operating current: 200mA Body dimensions: 9.65x6.35x3.3mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Kind of output: MOSFET Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO x2 Switched voltage: max. 280V AC; max. 280V DC Turn-off time: 0.5ms Turn-on time: 500µs Control current max.: 50mA On-state resistance: 10Ω Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 |
на замовлення 70 шт: термін постачання 14-30 дні (днів) |
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LBA127L | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Max. operating current: 200mA Body dimensions: 9.66x6.35x3.3mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Switched voltage: max. 250V AC; max. 250V DC Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA On-state resistance: 10Ω Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 |
на замовлення 93 шт: термін постачання 14-30 дні (днів) |
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LBA127 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Max. operating current: 200mA Body dimensions: 9.66x6.35x3.3mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Switched voltage: max. 250V AC; max. 250V DC Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA On-state resistance: 10Ω Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 |
на замовлення 75 шт: термін постачання 14-30 дні (днів) |
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LBA127LS | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA Max. operating current: 200mA Body dimensions: 9.66x6.35x3.3mm Manufacturer series: OptoMOS Operating temperature: -40...85°C Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO + SPST-NC Switched voltage: max. 250V AC; max. 250V DC Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA On-state resistance: 10Ω Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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MDD56-16N1B | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 71A Case: TO240AA Max. forward voltage: 1.14V Max. forward impulse current: 1.19kA Electrical mounting: screw Max. load current: 150A Mechanical mounting: screw Kind of package: bulk |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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| MCD95-16io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 116A Case: TO240AA Max. forward voltage: 1.28V Max. forward impulse current: 2.25kA Electrical mounting: FASTON connectors; screw Max. load current: 182A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCNA120PD2200TB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 120A Case: TO240AA Max. forward voltage: 1.34V Max. forward impulse current: 2.2kA Electrical mounting: FASTON connectors; screw Max. load current: 190A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCNA150PD2200YB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 150A; TO240AA; Ufmax: 1.18V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 150A Case: TO240AA Max. forward voltage: 1.18V Max. forward impulse current: 4.3kA Electrical mounting: FASTON connectors; screw Max. load current: 235A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCNA40PD2200TB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 40A Case: TO240AA Max. forward voltage: 1.29V Max. forward impulse current: 0.5kA Electrical mounting: FASTON connectors; screw Max. load current: 63A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCNA55PD2200TB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 55A Case: TO240AA Max. forward voltage: 1.2V Max. forward impulse current: 1kA Electrical mounting: FASTON connectors; screw Max. load current: 86A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCNA75PD2200TB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 75A Case: TO240AA Max. forward voltage: 1.21V Max. forward impulse current: 1.4kA Electrical mounting: FASTON connectors; screw Max. load current: 118A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCNA95PD2200TB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 95A Case: TO240AA Max. forward voltage: 1.24V Max. forward impulse current: 1.7kA Electrical mounting: FASTON connectors; screw Max. load current: 149A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
MCD224-20io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2kV Load current: 250A Case: Y1-CU Max. forward voltage: 1.03V Max. forward impulse current: 8kA Electrical mounting: screw Max. load current: 390A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.72V Gate current: 150/220mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
MCD224-22io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 250A Case: Y1-CU Max. forward voltage: 1.03V Max. forward impulse current: 8kA Electrical mounting: screw Max. load current: 390A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.72V Gate current: 150/220mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
MCD310-22io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 2.2kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.09V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 500A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/200mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
MCD225-14io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.4kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 220A Case: Y1-CU Max. forward voltage: 1.18V Max. forward impulse current: 8kA Electrical mounting: screw Max. load current: 400A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.79V Gate current: 150/220mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
MCD255-16io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 250A Case: Y1-CU Max. forward voltage: 1.08V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 450A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/220mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
MCD310-08io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 800V; 320A; Y2-DCB; Ufmax: 1.09V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.09V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 500A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/200mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
MCD310-16io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.09V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 500A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/200mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
MCD310-18io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.09V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 500A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/200mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| MCMA265PD1600KB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 268A Case: Y1-CU Max. forward voltage: 1.15V Max. forward impulse current: 8.5kA Electrical mounting: screw Max. load current: 421A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/220mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCD255-12io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.2kV; 250A; Y1-CU; Ufmax: 1.08V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 250A Case: Y1-CU Max. forward voltage: 1.08V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 450A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/220mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
MCD225-12io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.2kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 220A Case: Y1-CU Max. forward voltage: 1.18V Max. forward impulse current: 8kA Electrical mounting: screw Max. load current: 400A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.79V Gate current: 150/220mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
MCD225-16io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 220A Case: Y1-CU Max. forward voltage: 1.18V Max. forward impulse current: 8kA Electrical mounting: screw Max. load current: 400A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.79V Gate current: 150/220mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
MCD225-18io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.8kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 220A Case: Y1-CU Max. forward voltage: 1.18V Max. forward impulse current: 8kA Electrical mounting: screw Max. load current: 400A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.79V Gate current: 150/220mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| MCD255-14io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.4kV; 250A; Y1-CU; Ufmax: 1.08V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 250A Case: Y1-CU Max. forward voltage: 1.08V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 450A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/220mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCD255-18io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 250A Case: Y1-CU Max. forward voltage: 1.08V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 450A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/220mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
MCD310-12io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.09V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 500A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/200mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
MCD310-14io1 | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 320A Case: Y2-DCB Max. forward voltage: 1.09V Max. forward impulse current: 9.2kA Electrical mounting: screw Max. load current: 500A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.8V Gate current: 150/200mA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| MCD162-16io1B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 181A Case: Y4-M6 Max. forward voltage: 1.03V Max. forward impulse current: 6kA Electrical mounting: FASTON connectors; screw Max. load current: 300A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCD26-16IO1B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 27A Case: TO240AA Max. forward voltage: 1.27V Max. forward impulse current: 520A Electrical mounting: FASTON connectors; screw Max. load current: 42A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.85V Gate current: 100/200mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCD26-14IO1B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.4kV; 27A; TO240AA; Ufmax: 1.27V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 27A Case: TO240AA Max. forward voltage: 1.27V Max. forward impulse current: 520A Electrical mounting: FASTON connectors; screw Max. load current: 42A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw Threshold on-voltage: 0.85V Gate current: 100/200mA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCMA260PD1800YB | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.8kV; 260A; Y4-M6; Ufmax: 1.06V; bulk Type of semiconductor module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 260A Case: Y4-M6 Max. forward voltage: 1.06V Max. forward impulse current: 8.3kA Electrical mounting: FASTON connectors; screw Max. load current: 408A Kind of package: bulk Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
LBB110 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS Case: DIP8 Mounting: THT Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Operating temperature: -40...85°C Turn-off time: 3ms Turn-on time: 3ms Control current max.: 50mA Body dimensions: 9.65x6.35x3.3mm Max. operating current: 120mA On-state resistance: 35Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Kind of output: MOSFET Relay variant: 1-phase; current source |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
LBB110S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS Case: DIP8 Mounting: SMT Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Operating temperature: -40...85°C Turn-off time: 3ms Turn-on time: 3ms Control current max.: 50mA Body dimensions: 9.65x6.35x3.3mm Max. operating current: 120mA On-state resistance: 35Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Kind of output: MOSFET Relay variant: 1-phase; current source |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
LBB110P | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS Case: DIP8 Mounting: SMT Contacts configuration: SPST-NC x2 Kind of output: MOSFET Type of relay: solid state Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.66x6.35x2.16mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 35Ω Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source Insulation voltage: 3.75kV Manufacturer series: OptoMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| LBB110PTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS Case: DIP8 Mounting: SMT Contacts configuration: SPST-NC x2 Kind of output: MOSFET Type of relay: solid state Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.66x6.35x2.16mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 35Ω Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source Insulation voltage: 3.75kV Manufacturer series: OptoMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| LBB110STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS Case: DIP8 Mounting: SMT Contacts configuration: SPST-NC x2 Kind of output: MOSFET Type of relay: solid state Operating temperature: -40...85°C Turn-on time: 3ms Turn-off time: 3ms Body dimensions: 9.65x6.35x3.3mm Control current max.: 50mA Max. operating current: 120mA On-state resistance: 35Ω Switched voltage: max. 350V AC; max. 350V DC Relay variant: 1-phase; current source Insulation voltage: 3.75kV Manufacturer series: OptoMOS |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| LF2136BTR | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge Output current: -0.35...0.2A Operating temperature: -40...125°C Supply voltage: 10...20V Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT three-phase bridge; MOSFET three-phase bridge Mounting: SMD Number of channels: 6 Voltage class: 600V Kind of package: reel; tape Case: SO28 Type of integrated circuit: driver |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
IX2120B | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A Type of integrated circuit: driver Kind of integrated circuit: gate driver; high-/low-side Case: SO28 Output current: -2...2A Number of channels: 2 Mounting: SMD Operating temperature: -40...150°C Supply voltage: 15...20V Voltage class: 1.2kV Topology: IGBT half-bridge; MOSFET half-bridge Kind of package: tube |
на замовлення 230 шт: термін постачання 14-30 дні (днів) |
|
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|
IXFA130N10T2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO263 On-state resistance: 10.1mΩ Mounting: SMD Gate charge: 130nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
на замовлення 298 шт: термін постачання 14-30 дні (днів) |
|
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|
IXTN30N100L | IXYS |
Category: Transistor modules MOSFETDescription: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Pulsed drain current: 70A Power dissipation: 800W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 0.45Ω Gate charge: 545nC Kind of channel: enhancement Semiconductor structure: single transistor Reverse recovery time: 1µs Technology: Linear™ Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IXTB30N100L | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 30A Power dissipation: 800W Case: PLUS264™ On-state resistance: 0.45Ω Mounting: THT Gate charge: 545nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 1µs Features of semiconductor devices: linear power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IXTA130N10T-TRL | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Pulsed drain current: 350A Power dissipation: 360W Case: TO263 Gate-source voltage: ±30V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 77ns Technology: TrenchMV™ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
IXFP130N10T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO220AB On-state resistance: 10.1mΩ Mounting: THT Gate charge: 130nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
IXTP130N10T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Power dissipation: 360W Case: TO220AB On-state resistance: 9.1mΩ Mounting: THT Gate charge: 104nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 67ns Features of semiconductor devices: thrench gate power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IXTA130N10T | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Pulsed drain current: 350A Power dissipation: 360W Case: TO263 Gate-source voltage: ±30V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 77ns Technology: TrenchMV™ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IXTA130N10T7 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Pulsed drain current: 350A Power dissipation: 360W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 77ns Technology: TrenchMV™ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
DSP25-12AT-TUB | IXYS |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A Semiconductor structure: double series Mounting: SMD Type of diode: rectifying Max. forward voltage: 1.16V Load current: 25A Power dissipation: 160W Max. forward impulse current: 0.3kA Max. off-state voltage: 1.2kV Case: D3PAK |
на замовлення 42 шт: термін постачання 14-30 дні (днів) |
|
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| LIA136 | IXYS |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: THT Kind of output: isolation amplifier Insulation voltage: 3.75kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| LIA136S | IXYS |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: SMD Kind of output: isolation amplifier Insulation voltage: 3.75kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| LIA135 | IXYS |
Category: Optocouplers - analog outputDescription: Optocoupler; THT; OUT: isolation amplifier; 3.75kV Type of optocoupler: optocoupler Mounting: THT Kind of output: isolation amplifier Insulation voltage: 3.75kV |
товару немає в наявності |
В кошику од. на суму грн. |
| LCA127L |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
на замовлення 65 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 714.72 грн |
| 50+ | 435.11 грн |
| LCA127S |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
на замовлення 58 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 701.95 грн |
| 50+ | 427.49 грн |
| LCB127 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
на замовлення 2 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 550.62 грн |
| LCA127 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 350V AC; max. 350V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
на замовлення 4 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 422.08 грн |
| LCB127S |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Max. operating current: 200mA
Body dimensions: 8.38x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
на замовлення 1 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 455.81 грн |
| CS60-16IO1 |
![]() |
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 75A; 60A; Igt: 200mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 200mA
Max. load current: 75A
Max. forward impulse current: 1.4A
Load current: 60A
Max. off-state voltage: 1.6kV
Case: PLUS247™
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 75A; 60A; Igt: 200mA; PLUS247™; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 200mA
Max. load current: 75A
Max. forward impulse current: 1.4A
Load current: 60A
Max. off-state voltage: 1.6kV
Case: PLUS247™
Kind of package: tube
на замовлення 186 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1216.11 грн |
| 5+ | 931.16 грн |
| 10+ | 834.66 грн |
| LBB127P |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Max. operating current: 200mA
Body dimensions: 9.66x6.35x2.16mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Max. operating current: 200mA
Body dimensions: 9.66x6.35x2.16mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC x2
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 80 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 976.35 грн |
| 10+ | 702.60 грн |
| 50+ | 627.27 грн |
| CS60-14io1 |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 75A; 60A; Igt: 200mA; ISOPLUS247™; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 200mA
Max. load current: 75A
Max. forward impulse current: 1.4A
Load current: 60A
Max. off-state voltage: 1.4kV
Case: ISOPLUS247™
Kind of package: tube
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 75A; 60A; Igt: 200mA; ISOPLUS247™; THT; tube
Type of thyristor: thyristor
Mounting: THT
Gate current: 200mA
Max. load current: 75A
Max. forward impulse current: 1.4A
Load current: 60A
Max. off-state voltage: 1.4kV
Case: ISOPLUS247™
Kind of package: tube
на замовлення 24 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1353.77 грн |
| 3+ | 1112.32 грн |
| 10+ | 998.04 грн |
| PAA127 |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Max. operating current: 200mA
Body dimensions: 9.65x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 280V AC; max. 280V DC
Turn-off time: 0.5ms
Turn-on time: 500µs
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Max. operating current: 200mA
Body dimensions: 9.65x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Switched voltage: max. 280V AC; max. 280V DC
Turn-off time: 0.5ms
Turn-on time: 500µs
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 70 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 695.57 грн |
| 50+ | 423.26 грн |
| LBA127L |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 93 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1264.43 грн |
| 50+ | 769.48 грн |
| LBA127 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 75 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 973.62 грн |
| 10+ | 696.68 грн |
| 50+ | 624.73 грн |
| LBA127LS |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Max. operating current: 200mA
Body dimensions: 9.66x6.35x3.3mm
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO + SPST-NC
Switched voltage: max. 250V AC; max. 250V DC
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
на замовлення 2 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 836.87 грн |
| MDD56-16N1B |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.19kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Kind of package: bulk
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 71A; TO240AA; Ufmax: 1.14V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 71A
Case: TO240AA
Max. forward voltage: 1.14V
Max. forward impulse current: 1.19kA
Electrical mounting: screw
Max. load current: 150A
Mechanical mounting: screw
Kind of package: bulk
на замовлення 1 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2350.18 грн |
| MCD95-16io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.25kA
Electrical mounting: FASTON connectors; screw
Max. load current: 182A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 116A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 116A
Case: TO240AA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.25kA
Electrical mounting: FASTON connectors; screw
Max. load current: 182A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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| MCNA120PD2200TB |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 120A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 2.2kA
Electrical mounting: FASTON connectors; screw
Max. load current: 190A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 120A
Case: TO240AA
Max. forward voltage: 1.34V
Max. forward impulse current: 2.2kA
Electrical mounting: FASTON connectors; screw
Max. load current: 190A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MCNA150PD2200YB |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 150A; TO240AA; Ufmax: 1.18V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 150A
Case: TO240AA
Max. forward voltage: 1.18V
Max. forward impulse current: 4.3kA
Electrical mounting: FASTON connectors; screw
Max. load current: 235A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 150A; TO240AA; Ufmax: 1.18V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 150A
Case: TO240AA
Max. forward voltage: 1.18V
Max. forward impulse current: 4.3kA
Electrical mounting: FASTON connectors; screw
Max. load current: 235A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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В кошику
од. на суму грн.
| MCNA40PD2200TB |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 40A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors; screw
Max. load current: 63A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 40A
Case: TO240AA
Max. forward voltage: 1.29V
Max. forward impulse current: 0.5kA
Electrical mounting: FASTON connectors; screw
Max. load current: 63A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MCNA55PD2200TB |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 55A
Case: TO240AA
Max. forward voltage: 1.2V
Max. forward impulse current: 1kA
Electrical mounting: FASTON connectors; screw
Max. load current: 86A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 55A
Case: TO240AA
Max. forward voltage: 1.2V
Max. forward impulse current: 1kA
Electrical mounting: FASTON connectors; screw
Max. load current: 86A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MCNA75PD2200TB |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.21V
Max. forward impulse current: 1.4kA
Electrical mounting: FASTON connectors; screw
Max. load current: 118A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 75A
Case: TO240AA
Max. forward voltage: 1.21V
Max. forward impulse current: 1.4kA
Electrical mounting: FASTON connectors; screw
Max. load current: 118A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MCNA95PD2200TB |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 95A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.7kA
Electrical mounting: FASTON connectors; screw
Max. load current: 149A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 95A
Case: TO240AA
Max. forward voltage: 1.24V
Max. forward impulse current: 1.7kA
Electrical mounting: FASTON connectors; screw
Max. load current: 149A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| MCD224-20io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.03V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 390A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.72V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.03V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 390A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.72V
Gate current: 150/220mA
товару немає в наявності
В кошику
од. на суму грн.
| MCD224-22io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.03V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 390A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.72V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 250A; Y1-CU; Ufmax: 1.03V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.03V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 390A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.72V
Gate current: 150/220mA
товару немає в наявності
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од. на суму грн.
| MCD310-22io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
товару немає в наявності
В кошику
од. на суму грн.
| MCD225-14io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
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од. на суму грн.
| MCD255-16io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
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| MCD310-08io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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од. на суму грн.
| MCD310-16io1 |
![]() |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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| MCD310-18io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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од. на суму грн.
| MCMA265PD1600KB |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 268A
Case: Y1-CU
Max. forward voltage: 1.15V
Max. forward impulse current: 8.5kA
Electrical mounting: screw
Max. load current: 421A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 268A; Y1-CU; Ufmax: 1.15V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 268A
Case: Y1-CU
Max. forward voltage: 1.15V
Max. forward impulse current: 8.5kA
Electrical mounting: screw
Max. load current: 421A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
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| MCD255-12io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
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| MCD225-12io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
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| MCD225-16io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
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| MCD225-18io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 220A; Y1-CU; Ufmax: 1.18V; Ifsm: 8kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 220A
Case: Y1-CU
Max. forward voltage: 1.18V
Max. forward impulse current: 8kA
Electrical mounting: screw
Max. load current: 400A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.79V
Gate current: 150/220mA
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| MCD255-14io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
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| MCD255-18io1 |
![]() |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 250A; Y1-CU; Ufmax: 1.08V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 250A
Case: Y1-CU
Max. forward voltage: 1.08V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 450A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/220mA
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| MCD310-12io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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| MCD310-14io1 |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 320A; Y2-DCB; Ufmax: 1.09V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 320A
Case: Y2-DCB
Max. forward voltage: 1.09V
Max. forward impulse current: 9.2kA
Electrical mounting: screw
Max. load current: 500A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.8V
Gate current: 150/200mA
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| MCD162-16io1B |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 181A; Y4-M6; Ufmax: 1.03V; Ifsm: 6kA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 181A
Case: Y4-M6
Max. forward voltage: 1.03V
Max. forward impulse current: 6kA
Electrical mounting: FASTON connectors; screw
Max. load current: 300A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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| MCD26-16IO1B |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Max. load current: 42A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 100/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Max. load current: 42A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 100/200mA
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| MCD26-14IO1B |
![]() |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Max. load current: 42A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 100/200mA
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.4kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 27A
Case: TO240AA
Max. forward voltage: 1.27V
Max. forward impulse current: 520A
Electrical mounting: FASTON connectors; screw
Max. load current: 42A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Threshold on-voltage: 0.85V
Gate current: 100/200mA
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| MCMA260PD1800YB |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 260A
Case: Y4-M6
Max. forward voltage: 1.06V
Max. forward impulse current: 8.3kA
Electrical mounting: FASTON connectors; screw
Max. load current: 408A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 260A; Y4-M6; Ufmax: 1.06V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 260A
Case: Y4-M6
Max. forward voltage: 1.06V
Max. forward impulse current: 8.3kA
Electrical mounting: FASTON connectors; screw
Max. load current: 408A
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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| LBB110 | ![]() |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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| LBB110S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 9.65x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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| LBB110P |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
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| LBB110PTR |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
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| LBB110STR |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 120mA; OptoMOS
Case: DIP8
Mounting: SMT
Contacts configuration: SPST-NC x2
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 3ms
Turn-off time: 3ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
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| LF2136BTR |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Case: SO28
Type of integrated circuit: driver
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT three-phase bridge,MOSFET three-phase bridge
Output current: -0.35...0.2A
Operating temperature: -40...125°C
Supply voltage: 10...20V
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT three-phase bridge; MOSFET three-phase bridge
Mounting: SMD
Number of channels: 6
Voltage class: 600V
Kind of package: reel; tape
Case: SO28
Type of integrated circuit: driver
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| IX2120B |
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Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 15...20V
Voltage class: 1.2kV
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: tube
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO28; -2÷2A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO28
Output current: -2...2A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...150°C
Supply voltage: 15...20V
Voltage class: 1.2kV
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: tube
на замовлення 230 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 120.20 грн |
| IXFA130N10T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO263
On-state resistance: 10.1mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
на замовлення 298 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 404.76 грн |
| 10+ | 326.75 грн |
| 50+ | 245.49 грн |
| 100+ | 234.48 грн |
| IXTN30N100L |
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Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.45Ω
Gate charge: 545nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Technology: Linear™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; SOT227B; screw; Idm: 70A; 800W
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Pulsed drain current: 70A
Power dissipation: 800W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.45Ω
Gate charge: 545nC
Kind of channel: enhancement
Semiconductor structure: single transistor
Reverse recovery time: 1µs
Technology: Linear™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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| IXTB30N100L |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 30A; 800W; PLUS264™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 30A
Power dissipation: 800W
Case: PLUS264™
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 545nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1µs
Features of semiconductor devices: linear power mosfet
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| IXTA130N10T-TRL |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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| IXFP130N10T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 10.1mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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| IXTP130N10T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB; 67ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Power dissipation: 360W
Case: TO220AB
On-state resistance: 9.1mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 67ns
Features of semiconductor devices: thrench gate power mosfet
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| IXTA130N10T |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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| IXTA130N10T7 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 130A
Pulsed drain current: 350A
Power dissipation: 360W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 9.1mΩ
Mounting: SMD
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 77ns
Technology: TrenchMV™
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| DSP25-12AT-TUB |
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Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Semiconductor structure: double series
Mounting: SMD
Type of diode: rectifying
Max. forward voltage: 1.16V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: D3PAK
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Semiconductor structure: double series
Mounting: SMD
Type of diode: rectifying
Max. forward voltage: 1.16V
Load current: 25A
Power dissipation: 160W
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1.2kV
Case: D3PAK
на замовлення 42 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 553.36 грн |
| 3+ | 463.04 грн |
| 10+ | 408.87 грн |
| 30+ | 374.16 грн |
| LIA136 |
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Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
Category: Optocouplers - analog output
Description: Optocoupler; THT; OUT: isolation amplifier; 3.75kV
Type of optocoupler: optocoupler
Mounting: THT
Kind of output: isolation amplifier
Insulation voltage: 3.75kV
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