| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
DSI45-16A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W Semiconductor structure: single diode Case: TO247-2 Mounting: THT Type of diode: rectifying Max. forward voltage: 1.23V Load current: 45A Power dissipation: 270W Max. forward impulse current: 0.48kA Max. off-state voltage: 1.6kV Kind of package: tube |
на замовлення 227 шт: термін постачання 14-30 дні (днів) |
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DSI45-12A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W Semiconductor structure: single diode Case: TO247-2 Mounting: THT Type of diode: rectifying Max. forward voltage: 1.23V Load current: 45A Power dissipation: 270W Max. forward impulse current: 0.48kA Max. off-state voltage: 1.2kV Kind of package: tube |
на замовлення 480 шт: термін постачання 14-30 дні (днів) |
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DSI45-16AR | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™ Semiconductor structure: single diode Case: ISOPLUS247™ Mounting: THT Type of diode: rectifying Max. forward voltage: 1.23V Load current: 45A Power dissipation: 165W Max. forward impulse current: 410A Max. off-state voltage: 1.6kV Kind of package: tube |
на замовлення 57 шт: термін постачання 14-30 дні (днів) |
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DSEP15-12CR | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 110A; ISOPLUS247™ Mounting: THT Type of diode: rectifying Semiconductor structure: single diode Reverse recovery time: 15ns Max. forward voltage: 2.67V Max. forward impulse current: 110A Power dissipation: 150W Max. off-state voltage: 1.2kV Load current: 15A Kind of package: tube Case: ISOPLUS247™ Features of semiconductor devices: fast switching Technology: HiPerDynFRED |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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IXGA12N120A3 | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263 Collector current: 12A Case: TO263 Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Technology: GenX3™; PT Type of transistor: IGBT Kind of package: tube Gate charge: 20.4nC Turn-on time: 202ns Turn-off time: 1545ns Power dissipation: 100W Collector-emitter voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IXGA12N120A3-TRL | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 22A; 100W; D2PAK Collector current: 22A Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 60A Mounting: SMD Type of transistor: IGBT Kind of package: reel; tape Gate charge: 20.4nC Power dissipation: 100W Collector-emitter voltage: 1.2kV |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||
| MEK350-02DA | IXYS |
Category: Diode modulesDescription: Module: diode; double,common cathode; 200V; If: 356A; Y4-M6; screw Kind of package: bulk Semiconductor structure: common cathode; double Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Case: Y4-M6 Max. forward voltage: 0.92V Max. off-state voltage: 200V Load current: 356A Max. forward impulse current: 2.4kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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IXCP10M45S | IXYS |
Category: Integrated circuits - othersDescription: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA Case: TO220AB Mounting: THT Kind of integrated circuit: current regulator Operating voltage: 450V DC Type of integrated circuit: driver Power dissipation: 40W Operating temperature: -55...150°C Operating current: 2...100mA |
на замовлення 376 шт: термін постачання 14-30 дні (днів) |
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IXCY10M45S | IXYS |
Category: Integrated circuits - othersDescription: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA Case: TO252 Mounting: SMD Kind of integrated circuit: current regulator Operating voltage: 450V DC Type of integrated circuit: driver Power dissipation: 40W Operating temperature: -55...150°C Operating current: 2...100mA |
на замовлення 24 шт: термін постачання 14-30 дні (днів) |
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IXCY10M45S-TRL | IXYS |
Category: Integrated circuits - othersDescription: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA Case: TO252 Mounting: SMD Kind of integrated circuit: current regulator Operating voltage: 450V DC Type of integrated circuit: driver Power dissipation: 40W Operating temperature: -55...150°C Operating current: 2...100mA |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||
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IXBH42N170 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3 Type of transistor: IGBT Technology: BiMOSFET™; FRED Collector-emitter voltage: 1.7kV Collector current: 42A Power dissipation: 360W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 300A Mounting: THT Gate charge: 188nC Kind of package: tube Turn-on time: 224ns Turn-off time: 1.07µs Features of semiconductor devices: high voltage |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFP20N85X | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 20A Power dissipation: 540W Case: TO220AB On-state resistance: 0.33Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: ultra junction x-class Reverse recovery time: 190ns Gate charge: 63nC |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||
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CPC1998J | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; 1-phase Operating temperature: -40...85°C Max. operating current: 5A Body dimensions: 20.88x19.91x5.03mm Control current max.: 150mA Switched voltage: max. 240V AC Relay variant: 1-phase Insulation voltage: 2.5kV Case: i4-pac Switching method: zero voltage switching Mounting: THT Type of relay: solid state |
на замовлення 45 шт: термін постачання 14-30 дні (днів) |
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CPC1961G | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase Operating temperature: -40...85°C Case: DIP8 Mounting: THT Type of relay: solid state Switching method: zero voltage switching Body dimensions: 9.65x6.35x3.3mm Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 600V AC Insulation voltage: 3.75kV Relay variant: 1-phase |
на замовлення 206 шт: термін постачання 14-30 дні (днів) |
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CPC1918J | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Turn-on time: 25ms Max. operating current: 5250mA Turn-off time: 10ms Body dimensions: 19.91x26.16x5.03mm Control current max.: 100mA On-state resistance: 0.1Ω Switched voltage: max. 100V AC; max. 100V DC Relay variant: 1-phase; current source Insulation voltage: 2.5kV Case: ISOPLUS264™ Kind of output: MOSFET Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CPC1983Y | IXYS |
Category: DC Solid State RelaysDescription: Relay: solid state; 500mA; max.600VDC; THT; SIP4; OptoMOS; 6Ω; 2.5kV Manufacturer series: OptoMOS Operating temperature: -40...85°C Turn-on time: 5ms Max. operating current: 0.5A Turn-off time: 2ms Body dimensions: 21.08x10.16x3.3mm Control current max.: 50mA On-state resistance: 6Ω Switched voltage: max. 600V DC Relay variant: current source Insulation voltage: 2.5kV Case: SIP4 Kind of output: MOSFET Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CPC1978J | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 100mA; 750mA; max.800VAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Turn-on time: 20ms Max. operating current: 750mA Turn-off time: 5ms Body dimensions: 19.91x20.88x5.03mm Control current max.: 100mA On-state resistance: 2.3Ω Switched voltage: max. 800V AC; max. 800V DC Relay variant: 1-phase; current source Insulation voltage: 2.5kV Case: i4-pac Kind of output: MOSFET Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CPC1984Y | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Turn-on time: 10ms Max. operating current: 1A Turn-off time: 2ms Body dimensions: 21.08x10.16x3.3mm Control current max.: 50mA On-state resistance: 0.66Ω Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source Insulation voltage: 4kV Case: SIP4 Kind of output: MOSFET Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. | ||||||||
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CPC1977J | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Turn-on time: 20ms Max. operating current: 1.25A Turn-off time: 5ms Body dimensions: 19.91x20.88x5.03mm Control current max.: 100mA On-state resistance: 1Ω Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source Insulation voltage: 2.5kV Case: i4-pac Kind of output: MOSFET Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CPC1979J | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Turn-on time: 25ms Max. operating current: 1.4A Turn-off time: 5ms Body dimensions: 19.91x26.16x5.03mm Control current max.: 100mA On-state resistance: 0.75Ω Switched voltage: max. 600V AC; max. 600V DC Relay variant: 1-phase; current source Insulation voltage: 2.5kV Case: ISOPLUS264™ Kind of output: MOSFET Mounting: THT Type of relay: solid state Contacts configuration: SPST-NO |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFH140N20X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 140A Power dissipation: 520W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: THT Gate charge: 127nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 90ns Technology: HiPerFET™; X3-Class |
на замовлення 65 шт: термін постачання 14-30 дні (днів) |
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IXFN140N20P | IXYS |
Category: Transistor driversDescription: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A Polarisation: unipolar Drain-source voltage: 200V Drain current: 115A Pulsed drain current: 280A Power dissipation: 680W Case: SOT227B Gate-source voltage: ±30V On-state resistance: 18mΩ Gate charge: 240nC Kind of channel: enhancement Reverse recovery time: 150ns Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Technology: HiPerFET™; Polar™ Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFR140N20P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 90A Power dissipation: 300W Case: ISOPLUS247™ On-state resistance: 22mΩ Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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FBE22-06N1 | IXYS |
Category: SMD/THT sing. phase diode bridge rectif.Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 22A Max. forward impulse current: 50A Case: ISOPLUS i4-pac™ x024a Electrical mounting: THT Kind of package: tube |
на замовлення 244 шт: термін постачання 14-30 дні (днів) |
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VUE22-06NO7 | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT Type of bridge rectifier: three-phase Max. off-state voltage: 0.6kV Load current: 34A Max. forward impulse current: 50A Version: module Case: ECO-PAC 1 Electrical mounting: THT Max. forward voltage: 2.09V Technology: FRED Mechanical mounting: screw |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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| CMA40E1600HR | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube Case: ISO247™ Mounting: THT Kind of package: tube Type of thyristor: thyristor Gate current: 50/80mA Max. forward impulse current: 470A Load current: 40A Max. off-state voltage: 1.6kV Max. load current: 63A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MCMA400PD1600P-PC | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 400A; screw Type of semiconductor module: diode-thyristor Mechanical mounting: screw Load current: 400A Max. off-state voltage: 1.6kV |
товару немає в наявності |
Мінімальне замовлення: 24 шт В кошику од. на суму грн. | |||||||||
| MCMA400PD1600PTSF | IXYS |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA Semiconductor structure: double series Type of semiconductor module: diode-thyristor Case: SimBus F Electrical mounting: Press-Fit; screw Max. forward impulse current: 10kA Load current: 400A Max. off-state voltage: 1.6kV Max. load current: 630A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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CPC3902ZTR | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223 Kind of channel: depletion Mounting: SMD Case: SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 0.4A Power dissipation: 1.8W On-state resistance: 2.5Ω Gate-source voltage: ±15V Drain-source voltage: 250V Kind of package: reel; tape |
на замовлення 88 шт: термін постачання 14-30 дні (днів) |
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DPG60C400QB | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W Mounting: THT Case: TO3P Kind of package: tube Technology: HiPerFRED™ 2nd Gen Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Type of diode: rectifying Reverse recovery time: 45ns Max. forward voltage: 1.41V Max. forward impulse current: 360A Load current: 30A x2 Power dissipation: 160W Max. off-state voltage: 0.4kV |
на замовлення 97 шт: термін постачання 14-30 дні (днів) |
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MEA75-12DA | IXYS |
Category: Diode modulesDescription: Module: diode; double,common anode; 1.2kV; If: 75A; TO240AA; screw Case: TO240AA Kind of package: bulk Mechanical mounting: screw Max. forward voltage: 1.85V Load current: 75A Max. forward impulse current: 1.2kA Max. off-state voltage: 1.2kV Semiconductor structure: common anode; double Type of semiconductor module: diode Electrical mounting: screw |
на замовлення 100 шт: термін постачання 14-30 дні (днів) |
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| MEE75-12DA | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V Case: TO240AA Kind of package: bulk Mechanical mounting: screw Max. forward voltage: 1.85V Load current: 75A Max. forward impulse current: 1.2kA Max. off-state voltage: 1.2kV Semiconductor structure: double series Type of semiconductor module: diode Electrical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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VUO52-16NO1 | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 60A Max. forward impulse current: 350A Electrical mounting: FASTON connectors Version: module Max. forward voltage: 0.83V Leads: connectors Leads dimensions: 2x0.5mm Case: V1-A-Pack Mechanical mounting: screw |
на замовлення 20 шт: термін постачання 14-30 дні (днів) |
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IXFR140N30P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™ Mounting: THT Gate charge: 185nC On-state resistance: 28mΩ Polarisation: unipolar Kind of package: tube Drain current: 70A Type of transistor: N-MOSFET Case: ISOPLUS247™ Drain-source voltage: 300V Power dissipation: 300W Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IXFX140N30P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™ Mounting: THT Gate charge: 185nC On-state resistance: 24mΩ Polarisation: unipolar Kind of package: tube Drain current: 140A Type of transistor: N-MOSFET Case: PLUS247™ Drain-source voltage: 300V Power dissipation: 1.04kW Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| DPT15I600PA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220-2; 28ns Mounting: THT Case: TO220-2 Kind of package: tube Reverse recovery time: 28ns Load current: 15A Max. forward impulse current: 150A Max. off-state voltage: 0.6kV Technology: FRED Type of diode: rectifying Semiconductor structure: single diode |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||
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VUO86-16NO7 | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 86A Max. forward impulse current: 0.55kA Electrical mounting: THT Version: module Max. forward voltage: 1.51V Leads: wire Ø 1.5mm Case: ECO-PAC 1 Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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VUO36-16NO8 | IXYS |
Category: Three phase diode bridge rectifiersDescription: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A Type of bridge rectifier: three-phase Max. off-state voltage: 1.6kV Load current: 27A Max. forward impulse current: 0.55kA Electrical mounting: THT Version: square Max. forward voltage: 1.05V Leads: connectors FASTON Leads dimensions: 6.3x0.8mm Case: FO-B |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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| MIXG300PF1700TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor Max. off-state voltage: 1.7kV Collector current: 315A Case: SimBus F Electrical mounting: Press-in PCB Technology: X2PT Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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MDD255-12N1 | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.2kV; If: 270A; Y1-CU; Ufmax: 1.4V Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.4V Load current: 270A Max. load current: 450A Max. forward impulse current: 8.4kA Max. off-state voltage: 1.2kV Kind of package: bulk Type of semiconductor module: diode Semiconductor structure: double series Case: Y1-CU |
на замовлення 12 шт: термін постачання 14-30 дні (днів) |
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MDD255-16N1 | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.4V Load current: 270A Max. load current: 450A Max. forward impulse current: 8.4kA Max. off-state voltage: 1.6kV Kind of package: bulk Type of semiconductor module: diode Semiconductor structure: double series Case: Y1-CU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MDD255-22N1 | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.4V Load current: 270A Max. load current: 450A Max. forward impulse current: 8.4kA Max. off-state voltage: 2.2kV Kind of package: bulk Type of semiconductor module: diode Semiconductor structure: double series Case: Y1-CU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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MDD255-20N1 | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.4V Load current: 270A Max. load current: 450A Max. forward impulse current: 8.4kA Max. off-state voltage: 2kV Kind of package: bulk Type of semiconductor module: diode Semiconductor structure: double series Case: Y1-CU |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| MDD255-18N1 | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.08V Load current: 270A Max. load current: 450A Max. forward impulse current: 9.8kA Max. off-state voltage: 1.8kV Kind of package: bulk Type of semiconductor module: diode Semiconductor structure: double series Case: Y1-CU |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| MDD255-14N1 | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V Mechanical mounting: screw Electrical mounting: screw Max. forward voltage: 1.08V Load current: 270A Max. load current: 450A Max. forward impulse current: 9.8kA Max. off-state voltage: 1.4kV Kind of package: bulk Type of semiconductor module: diode Semiconductor structure: double series Case: Y1-CU |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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IXTP270N04T4 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns Mounting: THT Type of transistor: N-MOSFET Features of semiconductor devices: thrench gate power mosfet Polarisation: unipolar Reverse recovery time: 48ns Gate charge: 182nC On-state resistance: 2.4mΩ Drain-source voltage: 40V Drain current: 270A Power dissipation: 375W Kind of package: tube Case: TO220AB Kind of channel: enhancement |
на замовлення 59 шт: термін постачання 14-30 дні (днів) |
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DSEI60-02A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W Power dissipation: 150W Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Features of semiconductor devices: fast switching Type of diode: rectifying Reverse recovery time: 35ns Max. forward voltage: 0.88V Max. forward impulse current: 540A Load current: 69A Max. off-state voltage: 200V Technology: FRED |
на замовлення 191 шт: термін постачання 14-30 дні (днів) |
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DSEI2X61-10B | IXYS |
Category: Diode modulesDescription: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw Case: SOT227B Kind of package: tube Type of semiconductor module: diode Semiconductor structure: double independent Electrical mounting: screw Mechanical mounting: screw Max. forward voltage: 2.3V Max. forward impulse current: 540A Load current: 60A x2 Max. load current: 120A Max. off-state voltage: 1kV |
на замовлення 58 шт: термін постачання 14-30 дні (днів) |
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DSEI120-06A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W Power dissipation: 357W Case: TO247-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Features of semiconductor devices: fast switching Type of diode: rectifying Reverse recovery time: 35ns Max. forward voltage: 1.12V Max. forward impulse current: 540A Load current: 126A Max. off-state voltage: 0.6kV Technology: FRED |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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CLA16E1200PN | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube Case: TO220FP Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Max. forward impulse current: 195A Kind of package: tube Type of thyristor: thyristor Gate current: 50mA Max. load current: 16A |
на замовлення 113 шт: термін постачання 14-30 дні (днів) |
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IXTA380N036T4-7 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 36V Drain current: 380A Power dissipation: 480W Case: TO263-7 On-state resistance: 1mΩ Mounting: SMD Gate charge: 260nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 54ns Features of semiconductor devices: thrench gate power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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PM1204S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase Type of relay: solid state Control current max.: 100mA Max. operating current: 0.5A Switched voltage: max. 400V AC Relay variant: 1-phase Mounting: SMT Case: DIP6 Body dimensions: 9.65x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV Operating temperature: -40...85°C |
на замовлення 83 шт: термін постачання 14-30 дні (днів) |
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| IXXN340N65B4 | IXYS |
Category: IGBT modules Description: Module: IGBT; Ic: 520A; SOT227B; tube; screw Collector current: 520A Case: SOT227B Gate-emitter voltage: ±20V Pulsed collector current: 1.2kA Kind of package: tube Type of semiconductor module: IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||
| SK230NRP | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO263; SMD Case: TO263 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 19A Gate current: 30mA Max. load current: 30A Type of thyristor: thyristor |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||
| SK230RTP | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO220-3; THT Case: TO220-3 Mounting: THT Max. off-state voltage: 1.2kV Load current: 19A Gate current: 30mA Max. load current: 30A Type of thyristor: thyristor |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||
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IXYX50N170C | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™ Case: PLUS247™ Type of transistor: IGBT Technology: XPT™ Turn-on time: 62ns Gate charge: 260nC Turn-off time: 396ns Features of semiconductor devices: high voltage Gate-emitter voltage: ±20V Collector current: 50A Pulsed collector current: 460A Power dissipation: 1.5kW Mounting: THT Collector-emitter voltage: 1.7kV Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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PLA110S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 1ms Turn-off time: 0.5ms Kind of output: MOSFET Operating temperature: -40...85°C |
на замовлення 95 шт: термін постачання 14-30 дні (днів) |
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| PLA110STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 22Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 1ms Turn-off time: 0.5ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||
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LCA100 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Case: DIP6 Mounting: THT Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA Body dimensions: 8.38x6.35x3.3mm Max. operating current: 120mA On-state resistance: 25Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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LCA100L | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Case: DIP6 Mounting: THT Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-off time: 5ms Turn-on time: 5ms Control current max.: 50mA Body dimensions: 8.38x6.35x3.3mm Max. operating current: 120mA On-state resistance: 25Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source |
товару немає в наявності |
В кошику од. на суму грн. |
| DSI45-16A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.6kV
Kind of package: tube
на замовлення 227 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 334.84 грн |
| 5+ | 255.37 грн |
| 10+ | 223.86 грн |
| 30+ | 210.60 грн |
| DSI45-12A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.2kV
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 45A; tube; Ifsm: 480A; TO247-2; 270W
Semiconductor structure: single diode
Case: TO247-2
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 270W
Max. forward impulse current: 0.48kA
Max. off-state voltage: 1.2kV
Kind of package: tube
на замовлення 480 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 296.44 грн |
| 10+ | 214.74 грн |
| 30+ | 193.18 грн |
| DSI45-16AR |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™
Semiconductor structure: single diode
Case: ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 165W
Max. forward impulse current: 410A
Max. off-state voltage: 1.6kV
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 45A; tube; Ifsm: 410A; ISOPLUS247™
Semiconductor structure: single diode
Case: ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Max. forward voltage: 1.23V
Load current: 45A
Power dissipation: 165W
Max. forward impulse current: 410A
Max. off-state voltage: 1.6kV
Kind of package: tube
на замовлення 57 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 348.23 грн |
| DSEP15-12CR |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 110A; ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward voltage: 2.67V
Max. forward impulse current: 110A
Power dissipation: 150W
Max. off-state voltage: 1.2kV
Load current: 15A
Kind of package: tube
Case: ISOPLUS247™
Features of semiconductor devices: fast switching
Technology: HiPerDynFRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15A; tube; Ifsm: 110A; ISOPLUS247™
Mounting: THT
Type of diode: rectifying
Semiconductor structure: single diode
Reverse recovery time: 15ns
Max. forward voltage: 2.67V
Max. forward impulse current: 110A
Power dissipation: 150W
Max. off-state voltage: 1.2kV
Load current: 15A
Kind of package: tube
Case: ISOPLUS247™
Features of semiconductor devices: fast switching
Technology: HiPerDynFRED
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 700.92 грн |
| IXGA12N120A3 |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Collector current: 12A
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Technology: GenX3™; PT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 20.4nC
Turn-on time: 202ns
Turn-off time: 1545ns
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 12A; 100W; TO263
Collector current: 12A
Case: TO263
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Technology: GenX3™; PT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 20.4nC
Turn-on time: 202ns
Turn-off time: 1545ns
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| IXGA12N120A3-TRL |
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 22A; 100W; D2PAK
Collector current: 22A
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Type of transistor: IGBT
Kind of package: reel; tape
Gate charge: 20.4nC
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1.2kV; 22A; 100W; D2PAK
Collector current: 22A
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Mounting: SMD
Type of transistor: IGBT
Kind of package: reel; tape
Gate charge: 20.4nC
Power dissipation: 100W
Collector-emitter voltage: 1.2kV
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| MEK350-02DA |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 200V; If: 356A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 0.92V
Max. off-state voltage: 200V
Load current: 356A
Max. forward impulse current: 2.4kA
Category: Diode modules
Description: Module: diode; double,common cathode; 200V; If: 356A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 0.92V
Max. off-state voltage: 200V
Load current: 356A
Max. forward impulse current: 2.4kA
товару немає в наявності
В кошику
од. на суму грн.
| IXCP10M45S |
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Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Case: TO220AB
Mounting: THT
Kind of integrated circuit: current regulator
Operating voltage: 450V DC
Type of integrated circuit: driver
Power dissipation: 40W
Operating temperature: -55...150°C
Operating current: 2...100mA
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 450VDC; 40W; 2÷100mA
Case: TO220AB
Mounting: THT
Kind of integrated circuit: current regulator
Operating voltage: 450V DC
Type of integrated circuit: driver
Power dissipation: 40W
Operating temperature: -55...150°C
Operating current: 2...100mA
на замовлення 376 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 190.19 грн |
| 10+ | 142.61 грн |
| IXCY10M45S |
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Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Case: TO252
Mounting: SMD
Kind of integrated circuit: current regulator
Operating voltage: 450V DC
Type of integrated circuit: driver
Power dissipation: 40W
Operating temperature: -55...150°C
Operating current: 2...100mA
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Case: TO252
Mounting: SMD
Kind of integrated circuit: current regulator
Operating voltage: 450V DC
Type of integrated circuit: driver
Power dissipation: 40W
Operating temperature: -55...150°C
Operating current: 2...100mA
на замовлення 24 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 228.58 грн |
| 10+ | 160.85 грн |
| IXCY10M45S-TRL |
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Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Case: TO252
Mounting: SMD
Kind of integrated circuit: current regulator
Operating voltage: 450V DC
Type of integrated circuit: driver
Power dissipation: 40W
Operating temperature: -55...150°C
Operating current: 2...100mA
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 450VDC; 40W; 2÷100mA
Case: TO252
Mounting: SMD
Kind of integrated circuit: current regulator
Operating voltage: 450V DC
Type of integrated circuit: driver
Power dissipation: 40W
Operating temperature: -55...150°C
Operating current: 2...100mA
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| IXBH42N170 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 42A; 360W; TO247-3
Type of transistor: IGBT
Technology: BiMOSFET™; FRED
Collector-emitter voltage: 1.7kV
Collector current: 42A
Power dissipation: 360W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Turn-on time: 224ns
Turn-off time: 1.07µs
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику
од. на суму грн.
| IXFP20N85X |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 190ns
Gate charge: 63nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 20A; 540W; TO220AB; 190ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 20A
Power dissipation: 540W
Case: TO220AB
On-state resistance: 0.33Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 190ns
Gate charge: 63nC
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| CPC1998J |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 5A
Body dimensions: 20.88x19.91x5.03mm
Control current max.: 150mA
Switched voltage: max. 240V AC
Relay variant: 1-phase
Insulation voltage: 2.5kV
Case: i4-pac
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 150mA; 5000mA; max.240VAC; 1-phase
Operating temperature: -40...85°C
Max. operating current: 5A
Body dimensions: 20.88x19.91x5.03mm
Control current max.: 150mA
Switched voltage: max. 240V AC
Relay variant: 1-phase
Insulation voltage: 2.5kV
Case: i4-pac
Switching method: zero voltage switching
Mounting: THT
Type of relay: solid state
на замовлення 45 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1314.35 грн |
| 5+ | 1183.15 грн |
| 25+ | 1106.05 грн |
| CPC1961G |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Case: DIP8
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.600VAC; 1-phase
Operating temperature: -40...85°C
Case: DIP8
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 600V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
на замовлення 206 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 412.52 грн |
| 50+ | 250.39 грн |
| CPC1918J |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 25ms
Max. operating current: 5250mA
Turn-off time: 10ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
On-state resistance: 0.1Ω
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: ISOPLUS264™
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 5250mA; max.100VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 25ms
Max. operating current: 5250mA
Turn-off time: 10ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
On-state resistance: 0.1Ω
Switched voltage: max. 100V AC; max. 100V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: ISOPLUS264™
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
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| CPC1983Y |
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Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 500mA; max.600VDC; THT; SIP4; OptoMOS; 6Ω; 2.5kV
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 0.5A
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 6Ω
Switched voltage: max. 600V DC
Relay variant: current source
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Category: DC Solid State Relays
Description: Relay: solid state; 500mA; max.600VDC; THT; SIP4; OptoMOS; 6Ω; 2.5kV
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 5ms
Max. operating current: 0.5A
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 6Ω
Switched voltage: max. 600V DC
Relay variant: current source
Insulation voltage: 2.5kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
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| CPC1978J |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 750mA; max.800VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 20ms
Max. operating current: 750mA
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 100mA
On-state resistance: 2.3Ω
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 750mA; max.800VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 20ms
Max. operating current: 750mA
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 100mA
On-state resistance: 2.3Ω
Switched voltage: max. 800V AC; max. 800V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
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| CPC1984Y |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 10ms
Max. operating current: 1A
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.66Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 4kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 10ms
Max. operating current: 1A
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.66Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 4kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
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Мінімальне замовлення: 100 шт
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| CPC1977J |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 20ms
Max. operating current: 1.25A
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 100mA
On-state resistance: 1Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1250mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 20ms
Max. operating current: 1.25A
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 100mA
On-state resistance: 1Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: i4-pac
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
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| CPC1979J |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 25ms
Max. operating current: 1.4A
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
On-state resistance: 0.75Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: ISOPLUS264™
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 100mA; 1400mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 25ms
Max. operating current: 1.4A
Turn-off time: 5ms
Body dimensions: 19.91x26.16x5.03mm
Control current max.: 100mA
On-state resistance: 0.75Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 2.5kV
Case: ISOPLUS264™
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
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| IXFH140N20X3 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 140A; 520W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 140A
Power dissipation: 520W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: THT
Gate charge: 127nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
Technology: HiPerFET™; X3-Class
на замовлення 65 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 947.36 грн |
| 10+ | 647.54 грн |
| IXFN140N20P |
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Виробник: IXYS
Category: Transistor drivers
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Technology: HiPerFET™; Polar™
Electrical mounting: screw
Mechanical mounting: screw
Category: Transistor drivers
Description: Module; single transistor; 200V; 115A; SOT227B; screw; Idm: 280A
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 115A
Pulsed drain current: 280A
Power dissipation: 680W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 18mΩ
Gate charge: 240nC
Kind of channel: enhancement
Reverse recovery time: 150ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Technology: HiPerFET™; Polar™
Electrical mounting: screw
Mechanical mounting: screw
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| IXFR140N20P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 90A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 90A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
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| FBE22-06N1 |
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Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Case: ISOPLUS i4-pac™ x024a
Electrical mounting: THT
Kind of package: tube
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 600V; If: 22A; Ifsm: 50A; THT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 22A
Max. forward impulse current: 50A
Case: ISOPLUS i4-pac™ x024a
Electrical mounting: THT
Kind of package: tube
на замовлення 244 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 981.29 грн |
| 25+ | 758.64 грн |
| VUE22-06NO7 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 34A
Max. forward impulse current: 50A
Version: module
Case: ECO-PAC 1
Electrical mounting: THT
Max. forward voltage: 2.09V
Technology: FRED
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 34A; Ifsm: 50A; THT
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Load current: 34A
Max. forward impulse current: 50A
Version: module
Case: ECO-PAC 1
Electrical mounting: THT
Max. forward voltage: 2.09V
Technology: FRED
Mechanical mounting: screw
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1502.75 грн |
| CMA40E1600HR |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 63A; 40A; Igt: 50/80mA; ISO247™; THT; tube
Case: ISO247™
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50/80mA
Max. forward impulse current: 470A
Load current: 40A
Max. off-state voltage: 1.6kV
Max. load current: 63A
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| MCMA400PD1600P-PC |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; screw
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Load current: 400A
Max. off-state voltage: 1.6kV
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; screw
Type of semiconductor module: diode-thyristor
Mechanical mounting: screw
Load current: 400A
Max. off-state voltage: 1.6kV
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Мінімальне замовлення: 24 шт
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| MCMA400PD1600PTSF |
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. forward impulse current: 10kA
Load current: 400A
Max. off-state voltage: 1.6kV
Max. load current: 630A
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 400A; SimBus F; Ifsm: 10kA
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Case: SimBus F
Electrical mounting: Press-Fit; screw
Max. forward impulse current: 10kA
Load current: 400A
Max. off-state voltage: 1.6kV
Max. load current: 630A
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| CPC3902ZTR |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Kind of channel: depletion
Mounting: SMD
Case: SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.4A
Power dissipation: 1.8W
On-state resistance: 2.5Ω
Gate-source voltage: ±15V
Drain-source voltage: 250V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.4A; 1.8W; SOT223
Kind of channel: depletion
Mounting: SMD
Case: SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.4A
Power dissipation: 1.8W
On-state resistance: 2.5Ω
Gate-source voltage: ±15V
Drain-source voltage: 250V
Kind of package: reel; tape
на замовлення 88 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 91.08 грн |
| 10+ | 53.48 грн |
| DPG60C400QB |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Case: TO3P
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 45ns
Max. forward voltage: 1.41V
Max. forward impulse current: 360A
Load current: 30A x2
Power dissipation: 160W
Max. off-state voltage: 0.4kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 30Ax2; tube; Ifsm: 360A; TO3P; 160W
Mounting: THT
Case: TO3P
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 45ns
Max. forward voltage: 1.41V
Max. forward impulse current: 360A
Load current: 30A x2
Power dissipation: 160W
Max. off-state voltage: 0.4kV
на замовлення 97 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 478.59 грн |
| 10+ | 369.79 грн |
| 30+ | 347.40 грн |
| MEA75-12DA |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 75A; TO240AA; screw
Case: TO240AA
Kind of package: bulk
Mechanical mounting: screw
Max. forward voltage: 1.85V
Load current: 75A
Max. forward impulse current: 1.2kA
Max. off-state voltage: 1.2kV
Semiconductor structure: common anode; double
Type of semiconductor module: diode
Electrical mounting: screw
Category: Diode modules
Description: Module: diode; double,common anode; 1.2kV; If: 75A; TO240AA; screw
Case: TO240AA
Kind of package: bulk
Mechanical mounting: screw
Max. forward voltage: 1.85V
Load current: 75A
Max. forward impulse current: 1.2kA
Max. off-state voltage: 1.2kV
Semiconductor structure: common anode; double
Type of semiconductor module: diode
Electrical mounting: screw
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2235.82 грн |
| 3+ | 1918.58 грн |
| 5+ | 1832.35 грн |
| MEE75-12DA |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Case: TO240AA
Kind of package: bulk
Mechanical mounting: screw
Max. forward voltage: 1.85V
Load current: 75A
Max. forward impulse current: 1.2kA
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 75A; TO240AA; Ufmax: 1.85V
Case: TO240AA
Kind of package: bulk
Mechanical mounting: screw
Max. forward voltage: 1.85V
Load current: 75A
Max. forward impulse current: 1.2kA
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Type of semiconductor module: diode
Electrical mounting: screw
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| VUO52-16NO1 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors
Leads dimensions: 2x0.5mm
Case: V1-A-Pack
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 60A; Ifsm: 350A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 60A
Max. forward impulse current: 350A
Electrical mounting: FASTON connectors
Version: module
Max. forward voltage: 0.83V
Leads: connectors
Leads dimensions: 2x0.5mm
Case: V1-A-Pack
Mechanical mounting: screw
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2609.05 грн |
| 2+ | 2338.12 грн |
| 5+ | 2240.28 грн |
| 10+ | 2080.26 грн |
| IXFR140N30P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™
Mounting: THT
Gate charge: 185nC
On-state resistance: 28mΩ
Polarisation: unipolar
Kind of package: tube
Drain current: 70A
Type of transistor: N-MOSFET
Case: ISOPLUS247™
Drain-source voltage: 300V
Power dissipation: 300W
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 70A; 300W; ISOPLUS247™
Mounting: THT
Gate charge: 185nC
On-state resistance: 28mΩ
Polarisation: unipolar
Kind of package: tube
Drain current: 70A
Type of transistor: N-MOSFET
Case: ISOPLUS247™
Drain-source voltage: 300V
Power dissipation: 300W
Kind of channel: enhancement
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| IXFX140N30P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Mounting: THT
Gate charge: 185nC
On-state resistance: 24mΩ
Polarisation: unipolar
Kind of package: tube
Drain current: 140A
Type of transistor: N-MOSFET
Case: PLUS247™
Drain-source voltage: 300V
Power dissipation: 1.04kW
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 140A; 1040W; PLUS247™
Mounting: THT
Gate charge: 185nC
On-state resistance: 24mΩ
Polarisation: unipolar
Kind of package: tube
Drain current: 140A
Type of transistor: N-MOSFET
Case: PLUS247™
Drain-source voltage: 300V
Power dissipation: 1.04kW
Kind of channel: enhancement
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| DPT15I600PA |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220-2; 28ns
Mounting: THT
Case: TO220-2
Kind of package: tube
Reverse recovery time: 28ns
Load current: 15A
Max. forward impulse current: 150A
Max. off-state voltage: 0.6kV
Technology: FRED
Type of diode: rectifying
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; Ifsm: 150A; TO220-2; 28ns
Mounting: THT
Case: TO220-2
Kind of package: tube
Reverse recovery time: 28ns
Load current: 15A
Max. forward impulse current: 150A
Max. off-state voltage: 0.6kV
Technology: FRED
Type of diode: rectifying
Semiconductor structure: single diode
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Мінімальне замовлення: 1000 шт
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| VUO86-16NO7 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
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| VUO36-16NO8 |
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Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: FO-B
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 27A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 27A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: square
Max. forward voltage: 1.05V
Leads: connectors FASTON
Leads dimensions: 6.3x0.8mm
Case: FO-B
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1115.23 грн |
| MIXG300PF1700TSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 315A
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 315A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Max. off-state voltage: 1.7kV
Collector current: 315A
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Mechanical mounting: screw
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| MDD255-12N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 11550.52 грн |
| 3+ | 9704.01 грн |
| 6+ | 9485.12 грн |
| MDD255-16N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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| MDD255-22N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 270A; Y1-CU; Ufmax: 1.4V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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| MDD255-20N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 2kV; If: 270A; Y1-CU; Ufmax: 1.4V; 450A
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.4V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 8.4kA
Max. off-state voltage: 2kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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| MDD255-18N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.8kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.8kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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| MDD255-14N1 |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
Category: Diode modules
Description: Module: diode; double series; 1.4kV; If: 270A; Y1-CU; Ufmax: 1.08V
Mechanical mounting: screw
Electrical mounting: screw
Max. forward voltage: 1.08V
Load current: 270A
Max. load current: 450A
Max. forward impulse current: 9.8kA
Max. off-state voltage: 1.4kV
Kind of package: bulk
Type of semiconductor module: diode
Semiconductor structure: double series
Case: Y1-CU
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| IXTP270N04T4 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Reverse recovery time: 48ns
Gate charge: 182nC
On-state resistance: 2.4mΩ
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO220AB; 48ns
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Reverse recovery time: 48ns
Gate charge: 182nC
On-state resistance: 2.4mΩ
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Kind of package: tube
Case: TO220AB
Kind of channel: enhancement
на замовлення 59 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 250.90 грн |
| 3+ | 209.77 грн |
| 10+ | 185.72 грн |
| 50+ | 172.46 грн |
| DSEI60-02A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Power dissipation: 150W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 0.88V
Max. forward impulse current: 540A
Load current: 69A
Max. off-state voltage: 200V
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 69A; tube; Ifsm: 540A; TO247-2; 150W
Power dissipation: 150W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 0.88V
Max. forward impulse current: 540A
Load current: 69A
Max. off-state voltage: 200V
Technology: FRED
на замовлення 191 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 470.56 грн |
| 3+ | 393.83 грн |
| 10+ | 328.33 грн |
| 30+ | 327.50 грн |
| DSEI2X61-10B |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Case: SOT227B
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 2.3V
Max. forward impulse current: 540A
Load current: 60A x2
Max. load current: 120A
Max. off-state voltage: 1kV
Category: Diode modules
Description: Module: diode; double independent; 1kV; If: 60Ax2; SOT227B; screw
Case: SOT227B
Kind of package: tube
Type of semiconductor module: diode
Semiconductor structure: double independent
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 2.3V
Max. forward impulse current: 540A
Load current: 60A x2
Max. load current: 120A
Max. off-state voltage: 1kV
на замовлення 58 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2463.50 грн |
| DSEI120-06A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.12V
Max. forward impulse current: 540A
Load current: 126A
Max. off-state voltage: 0.6kV
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 126A; tube; Ifsm: 540A; TO247-2; 357W
Power dissipation: 357W
Case: TO247-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 35ns
Max. forward voltage: 1.12V
Max. forward impulse current: 540A
Load current: 126A
Max. off-state voltage: 0.6kV
Technology: FRED
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| CLA16E1200PN |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Case: TO220FP
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Max. forward impulse current: 195A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 16A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 16A; 10A; Igt: 50mA; TO220FP; THT; tube
Case: TO220FP
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Max. forward impulse current: 195A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 16A
на замовлення 113 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 251.80 грн |
| 10+ | 128.51 грн |
| 50+ | 117.73 грн |
| 100+ | 113.59 грн |
| IXTA380N036T4-7 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
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| PM1204S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Type of relay: solid state
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 9.65x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
на замовлення 83 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1089.34 грн |
| 50+ | 662.47 грн |
| IXXN340N65B4 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; Ic: 520A; SOT227B; tube; screw
Collector current: 520A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Kind of package: tube
Type of semiconductor module: IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; Ic: 520A; SOT227B; tube; screw
Collector current: 520A
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
Kind of package: tube
Type of semiconductor module: IGBT
Mechanical mounting: screw
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Мінімальне замовлення: 300 шт
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| SK230NRP |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO263; SMD
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 19A
Gate current: 30mA
Max. load current: 30A
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO263; SMD
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 19A
Gate current: 30mA
Max. load current: 30A
Type of thyristor: thyristor
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Мінімальне замовлення: 500 шт
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| SK230RTP |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO220-3; THT
Case: TO220-3
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 19A
Gate current: 30mA
Max. load current: 30A
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 30A; 19A; Igt: 30mA; TO220-3; THT
Case: TO220-3
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 19A
Gate current: 30mA
Max. load current: 30A
Type of thyristor: thyristor
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| IXYX50N170C |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Case: PLUS247™
Type of transistor: IGBT
Technology: XPT™
Turn-on time: 62ns
Gate charge: 260nC
Turn-off time: 396ns
Features of semiconductor devices: high voltage
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 460A
Power dissipation: 1.5kW
Mounting: THT
Collector-emitter voltage: 1.7kV
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 1.7kV; 50A; 1.5kW; PLUS247™
Case: PLUS247™
Type of transistor: IGBT
Technology: XPT™
Turn-on time: 62ns
Gate charge: 260nC
Turn-off time: 396ns
Features of semiconductor devices: high voltage
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 460A
Power dissipation: 1.5kW
Mounting: THT
Collector-emitter voltage: 1.7kV
Kind of package: tube
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| PLA110S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 504.49 грн |
| 50+ | 408.76 грн |
| PLA110STR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 22Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 1ms
Turn-off time: 0.5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| LCA100 |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
товару немає в наявності
В кошику
од. на суму грн.
| LCA100L |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 25Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
товару немає в наявності
В кошику
од. на суму грн.




































