Продукція > IXYS > Всі товари виробника IXYS (15705) > Сторінка 253 з 262

Обрати Сторінку:   [  << Попередня Сторінка ]  1 26 52 78 104 130 156 182 208 234 248 249 250 251 252 253 254 255 256 257 258 260 262  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
IXTH12N65X2 IXTH12N65X2 IXYS IXT_12N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Reverse recovery time: 270ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP12N65X2 IXTP12N65X2 IXYS IXT_12N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP12N65X2M IXTP12N65X2M IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Pulsed drain current: 24A
товару немає в наявності
В кошику  од. на суму  грн.
IXXP12N65B4D1 IXXP12N65B4D1 IXYS IXXP12N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 12A
Gate charge: 34nC
Pulsed collector current: 70A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Turn-on time: 44ns
Turn-off time: 245ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFA30N60X IXFA30N60X IXYS IXFA(P)30N60X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO263
On-state resistance: 155mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFH30N60P IXFH30N60P IXYS IXFH(T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Gate charge: 82nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFH30N60X IXFH30N60X IXYS IXFH(T,Q)30N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFP30N60X IXFP30N60X IXYS IXFA(P)30N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFR30N60P IXFR30N60P IXYS IXFR30N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 166W
Gate charge: 85nC
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+921.07 грн
3+776.18 грн
В кошику  од. на суму  грн.
IXKH30N60C5 IXKH30N60C5 IXYS IXKH30N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 310W
Features of semiconductor devices: super junction coolmos
Gate charge: 53nC
товару немає в наявності
В кошику  од. на суму  грн.
IXTH30N60L2 IXTH30N60L2 IXYS IXT_30N60L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFA18N60X IXFA18N60X IXYS IXFA(H,P)18N60X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Gate charge: 35nC
Features of semiconductor devices: ultra junction x-class
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
3+185.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFH18N60P IXFH18N60P IXYS IXFH18N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
на замовлення 282 шт:
термін постачання 21-30 дні (днів)
1+475.62 грн
10+297.45 грн
30+267.79 грн
В кошику  од. на суму  грн.
IXTQ18N60P IXTQ18N60P IXYS IXTQ18N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO3P
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 49nC
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXBH10N170 IXBH10N170 IXYS IXBH(T)10N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 30nC
Turn-on time: 63ns
Turn-off time: 1.8µs
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
1+694.80 грн
10+575.13 грн
В кошику  од. на суму  грн.
IXBH10N300HV IXBH10N300HV IXYS IXBA(H)10N300HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Gate charge: 46nC
Turn-on time: 805ns
Turn-off time: 2.13µs
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Power dissipation: 180W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+6341.02 грн
3+5198.43 грн
10+4671.91 грн
В кошику  од. на суму  грн.
CPC1230N CPC1230N IXYS CPC1230N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NO
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
7+73.65 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CPC1230NTR CPC1230NTR IXYS CPC1230N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NO
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
товару немає в наявності
В кошику  од. на суму  грн.
CPC1231N CPC1231N IXYS CPC1231N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NC
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
на замовлення 335 шт:
термін постачання 21-30 дні (днів)
4+133.10 грн
10+97.23 грн
100+90.64 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC1231NTR CPC1231NTR IXYS CPC1231N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NC
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
товару немає в наявності
В кошику  од. на суму  грн.
LCA710 LCA710 IXYS littelfuse-integrated-circuits-lca710-datasheet?assetguid=c3811d33-57ae-4a3d-b8d6-f328a7772467 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 602 шт:
термін постачання 21-30 дні (днів)
2+354.94 грн
50+262.02 грн
100+244.72 грн
500+229.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA710R LCA710R IXYS LCA710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LCA710RTR IXYS LCA710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LCA710S LCA710S IXYS littelfuse-integrated-circuits-lca710-datasheet?assetguid=c3811d33-57ae-4a3d-b8d6-f328a7772467 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 102 шт:
термін постачання 21-30 дні (днів)
1+582.99 грн
50+496.85 грн
100+423.52 грн
В кошику  од. на суму  грн.
LCA710STR IXYS LCA710.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IXFH140N10P IXFH140N10P IXYS IXFH(T)140N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
1+576.78 грн
3+482.02 грн
10+425.99 грн
В кошику  од. на суму  грн.
IXFT140N10P IXFT140N10P IXYS IXFH(T)140N10P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
2+257.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTQ140N10P IXTQ140N10P IXYS IXTQ140N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
товару немає в наявності
В кошику  од. на суму  грн.
IXTT140N10P IXTT140N10P IXYS IXTQ140N10P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
товару немає в наявності
В кошику  од. на суму  грн.
IXGH4N250C IXYS DS100320(IXGH-GT4N250C).pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Pulsed collector current: 8A
Collector-emitter voltage: 2.5kV
Collector current: 13A
Gate-emitter voltage: ±20V
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Gate charge: 57nC
Turn-off time: 350ns
товару немає в наявності
В кошику  од. на суму  грн.
CPC1006N CPC1006N IXYS CPC1006N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-off time: 10ms
Turn-on time: 10ms
Control current max.: 50mA
Kind of output: MOSFET
Max. operating current: 75mA
On-state resistance: 10Ω
Case: SOP4
Insulation voltage: 1.5kV
на замовлення 2294 шт:
термін постачання 21-30 дні (днів)
6+79.86 грн
10+70.86 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IXKR47N60C5 IXKR47N60C5 IXYS IXKR47N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+1824.40 грн
3+1535.88 грн
10+1351.31 грн
В кошику  од. на суму  грн.
IXGR48N60C3D1 IXGR48N60C3D1 IXYS IXGR48N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 125W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 187ns
Collector current: 26A
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
1+1324.82 грн
5+1062.10 грн
10+947.57 грн
30+824.79 грн
В кошику  од. на суму  грн.
IXXH40N65B4 IXXH40N65B4 IXYS IXXH40N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Technology: GenX4™; Trench; XPT™
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
2+427.70 грн
3+357.60 грн
10+315.58 грн
30+284.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXXH40N65B4D1 IXXH40N65B4D1 IXYS IXXH40N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Technology: GenX4™; Trench; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXXH40N65B4H1 IXXH40N65B4H1 IXYS IXXH40N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
Technology: GenX4™; Trench; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXXH40N65C4D1 IXXH40N65C4D1 IXYS IXXH40N65C4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
Technology: GenX4™; Trench; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXFA16N60P3 IXFA16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
3+181.91 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFP16N60P3 IXFP16N60P3 IXYS IXFA(H,P)16N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 261 шт:
термін постачання 21-30 дні (днів)
1+455.21 грн
50+229.06 грн
100+211.76 грн
В кошику  од. на суму  грн.
IXDH20N120 IXDH20N120 IXYS IXDH20N120_IXDH20N120D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Technology: NPT
Turn-on time: 175ns
Turn-off time: 570ns
на замовлення 204 шт:
термін постачання 21-30 дні (днів)
1+499.58 грн
3+417.75 грн
10+369.14 грн
30+331.24 грн
В кошику  од. на суму  грн.
IXFN20N120P IXFN20N120P IXYS IXFN20N120P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 20A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 50A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 193nC
Kind of channel: enhancement
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
1+1228.10 грн
3+1107.42 грн
В кошику  од. на суму  грн.
IXFH34N60X2A IXFH34N60X2A IXYS IXFH34N60X2A.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Pulsed drain current: 68A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Technology: HiPerFET™; X2-Class
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+492.48 грн
В кошику  од. на суму  грн.
IXFK64N60Q3 IXFK64N60Q3 IXYS IXFK(X)64N60Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
1+1015.13 грн
3+941.80 грн
В кошику  од. на суму  грн.
IXTP14N60X2 IXTP14N60X2 IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 16.7nC
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
2+410.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXXH30N60B3D1 IXXH30N60B3D1 IXYS IXXH30N60B3D1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 23ns
Turn-off time: 125ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 115A
Technology: GenX3™; Planar; XPT™
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
1+467.64 грн
5+404.57 грн
В кошику  од. на суму  грн.
IXXN110N65B4H1 IXXN110N65B4H1 IXYS IXXN110N65B4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXXN110N65C4H1 IXXN110N65C4H1 IXYS IXXN110N65C4H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXXR110N65B4H1 IXXR110N65B4H1 IXYS IXXR110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 70A
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
товару немає в наявності
В кошику  од. на суму  грн.
IXXX110N65B4H1 IXXX110N65B4H1 IXYS IXX_110N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTH30N60P IXTH30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
на замовлення 276 шт:
термін постачання 21-30 дні (днів)
1+738.28 грн
3+636.93 грн
10+529.81 грн
30+491.91 грн
В кошику  од. на суму  грн.
IXTQ30N60L2 IXTQ30N60L2 IXYS IXT_30N60L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ30N60P IXTQ30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N60L2 IXTT30N60L2 IXYS IXT_30N60L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Technology: Linear L2™
Gate charge: 335nC
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N60P IXTT30N60P IXYS IXTH(Q,T,V)30N60P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
товару немає в наявності
В кошику  од. на суму  грн.
IXXH30N60C3D1 IXXH30N60C3D1 IXYS IXXH30N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 37ns
Gate charge: 37nC
Turn-off time: 166ns
товару немає в наявності
В кошику  од. на суму  грн.
IXXQ30N60B3M IXXQ30N60B3M IXYS IXXQ30N60B3M.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Case: TO3PF
Mounting: THT
Kind of package: tube
Collector current: 19A
Gate-emitter voltage: ±20V
Power dissipation: 90W
Pulsed collector current: 140A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 57ns
Gate charge: 39nC
Turn-off time: 292ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTA15N50L2 IXTA15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 570ns
Features of semiconductor devices: linear power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTH15N50L2 IXTH15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 570ns
Features of semiconductor devices: linear power mosfet
на замовлення 230 шт:
термін постачання 21-30 дні (днів)
1+732.07 грн
30+454.83 грн
В кошику  од. на суму  грн.
IXTP15N50L2 IXTP15N50L2 IXYS IXTA(H,P)15N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 570ns
Features of semiconductor devices: linear power mosfet
на замовлення 269 шт:
термін постачання 21-30 дні (днів)
1+678.82 грн
5+510.86 грн
10+445.77 грн
50+423.52 грн
В кошику  од. на суму  грн.
IXFK48N60P IXFK48N60P IXYS IXF_48N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1015.13 грн
В кошику  од. на суму  грн.
IXTH12N65X2 IXT_12N65X2.pdf
IXTH12N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Reverse recovery time: 270ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP12N65X2 IXT_12N65X2.pdf
IXTP12N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP12N65X2M ixty2n65x2.pdf
IXTP12N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Pulsed drain current: 24A
товару немає в наявності
В кошику  од. на суму  грн.
IXXP12N65B4D1 IXXP12N65B4D1.pdf
IXXP12N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 12A
Gate charge: 34nC
Pulsed collector current: 70A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Turn-on time: 44ns
Turn-off time: 245ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFA30N60X IXFA(P)30N60X.pdf
IXFA30N60X
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO263; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO263
On-state resistance: 155mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFH30N60P IXFH(T,V)30N60P_S.pdf
IXFH30N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 500W
Gate charge: 82nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFH30N60X IXFH(T,Q)30N60X.pdf
IXFH30N60X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO247-3; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFP30N60X IXFA(P)30N60X.pdf
IXFP30N60X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 500W; TO220AB; 145ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO220AB
On-state resistance: 155mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
Power dissipation: 500W
Features of semiconductor devices: ultra junction x-class
Gate charge: 56nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFR30N60P IXFR30N60P.pdf
IXFR30N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; 166W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 166W
Gate charge: 85nC
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+921.07 грн
3+776.18 грн
В кошику  од. на суму  грн.
IXKH30N60C5 IXKH30N60C5.pdf
IXKH30N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 310W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 310W
Features of semiconductor devices: super junction coolmos
Gate charge: 53nC
товару немає в наявності
В кошику  од. на суму  грн.
IXTH30N60L2 IXT_30N60L2.pdf
IXTH30N60L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFA18N60X IXFA(H,P)18N60X.pdf
IXFA18N60X
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 320W; TO263; 127ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 320W
Case: TO263
On-state resistance: 0.23Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 127ns
Gate charge: 35nC
Features of semiconductor devices: ultra junction x-class
на замовлення 75 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+185.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFH18N60P IXFH18N60P.pdf
IXFH18N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 50nC
на замовлення 282 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+475.62 грн
10+297.45 грн
30+267.79 грн
В кошику  од. на суму  грн.
IXTQ18N60P IXTQ18N60P.pdf
IXTQ18N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 360W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 360W
Case: TO3P
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 49nC
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXBH10N170 IXBH(T)10N170.pdf
IXBH10N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 140W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 30nC
Turn-on time: 63ns
Turn-off time: 1.8µs
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 140W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+694.80 грн
10+575.13 грн
В кошику  од. на суму  грн.
IXBH10N300HV IXBA(H)10N300HV.pdf
IXBH10N300HV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 10A; 180W; TO247HV
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Gate charge: 46nC
Turn-on time: 805ns
Turn-off time: 2.13µs
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 88A
Power dissipation: 180W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+6341.02 грн
3+5198.43 грн
10+4671.91 грн
В кошику  од. на суму  грн.
CPC1230N CPC1230N.pdf
CPC1230N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NO
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+73.65 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
CPC1230NTR CPC1230N.pdf
CPC1230NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 1ms
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NO
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
товару немає в наявності
В кошику  од. на суму  грн.
CPC1231N CPC1231N.pdf
CPC1231N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NC
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
на замовлення 335 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+133.10 грн
10+97.23 грн
100+90.64 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC1231NTR CPC1231N.pdf
CPC1231NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Mounting: SMT
Kind of output: MOSFET
Insulation voltage: 1.5kV
Case: SOP4
Turn-on time: 2ms
Turn-off time: 2ms
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Contacts configuration: SPST-NC
On-state resistance: 30Ω
Type of relay: solid state
Switched voltage: max. 350V AC; max. 350V DC
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
товару немає в наявності
В кошику  од. на суму  грн.
LCA710 littelfuse-integrated-circuits-lca710-datasheet?assetguid=c3811d33-57ae-4a3d-b8d6-f328a7772467
LCA710
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 602 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+354.94 грн
50+262.02 грн
100+244.72 грн
500+229.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
LCA710R LCA710.pdf
LCA710R
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LCA710RTR LCA710.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LCA710S littelfuse-integrated-circuits-lca710-datasheet?assetguid=c3811d33-57ae-4a3d-b8d6-f328a7772467
LCA710S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 102 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+582.99 грн
50+496.85 грн
100+423.52 грн
В кошику  од. на суму  грн.
LCA710STR LCA710.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 1A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.5Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Turn-off time: 0.25ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IXFH140N10P IXFH(T)140N10P.pdf
IXFH140N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 140A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+576.78 грн
3+482.02 грн
10+425.99 грн
В кошику  од. на суму  грн.
IXFT140N10P IXFH(T)140N10P.pdf
IXFT140N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+257.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTQ140N10P IXTQ140N10P-DTE.pdf
IXTQ140N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
товару немає в наявності
В кошику  од. на суму  грн.
IXTT140N10P IXTQ140N10P-DTE.pdf
IXTT140N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 120ns
Technology: PolarHT™
товару немає в наявності
В кошику  од. на суму  грн.
IXGH4N250C DS100320(IXGH-GT4N250C).pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 13A; 150W; TO247-3; Features: high voltage
Mounting: THT
Power dissipation: 150W
Pulsed collector current: 8A
Collector-emitter voltage: 2.5kV
Collector current: 13A
Gate-emitter voltage: ±20V
Case: TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Kind of package: tube
Gate charge: 57nC
Turn-off time: 350ns
товару немає в наявності
В кошику  од. на суму  грн.
CPC1006N CPC1006N.pdf
CPC1006N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Mounting: SMT
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-off time: 10ms
Turn-on time: 10ms
Control current max.: 50mA
Kind of output: MOSFET
Max. operating current: 75mA
On-state resistance: 10Ω
Case: SOP4
Insulation voltage: 1.5kV
на замовлення 2294 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
6+79.86 грн
10+70.86 грн
Мінімальне замовлення: 6
В кошику  од. на суму  грн.
IXKR47N60C5 IXKR47N60C5.pdf
IXKR47N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; 278W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Power dissipation: 278W
Case: ISOPLUS247™
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1824.40 грн
3+1535.88 грн
10+1351.31 грн
В кошику  од. на суму  грн.
IXGR48N60C3D1 IXGR48N60C3D1.pdf
IXGR48N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 26A; 125W; ISOPLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 125W
Case: ISOPLUS247™
Mounting: THT
Gate charge: 77nC
Kind of package: tube
Gate-emitter voltage: ±20V
Pulsed collector current: 230A
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 187ns
Collector current: 26A
на замовлення 295 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1324.82 грн
5+1062.10 грн
10+947.57 грн
30+824.79 грн
В кошику  од. на суму  грн.
IXXH40N65B4 IXXH40N65B4.pdf
IXXH40N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Technology: GenX4™; Trench; XPT™
на замовлення 34 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+427.70 грн
3+357.60 грн
10+315.58 грн
30+284.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXXH40N65B4D1 IXXH40N65B4D1.pdf
IXXH40N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 67ns
Turn-off time: 252ns
Technology: GenX4™; Trench; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXXH40N65B4H1 IXXH40N65B4H1.pdf
IXXH40N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 61ns
Turn-off time: 207ns
Technology: GenX4™; Trench; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXXH40N65C4D1 IXXH40N65C4D1.pdf
IXXH40N65C4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 40A; 455W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 455W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 215A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 71ns
Turn-off time: 142ns
Technology: GenX4™; Trench; XPT™
товару немає в наявності
В кошику  од. на суму  грн.
IXFA16N60P3 IXFA(H,P)16N60P3.pdf
IXFA16N60P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+181.91 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFP16N60P3 IXFA(H,P)16N60P3.pdf
IXFP16N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 261 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+455.21 грн
50+229.06 грн
100+211.76 грн
В кошику  од. на суму  грн.
IXDH20N120 IXDH20N120_IXDH20N120D1.pdf
IXDH20N120
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.2kV; 25A; 200W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 200W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 50A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Technology: NPT
Turn-on time: 175ns
Turn-off time: 570ns
на замовлення 204 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+499.58 грн
3+417.75 грн
10+369.14 грн
30+331.24 грн
В кошику  од. на суму  грн.
IXFN20N120P IXFN20N120P.pdf
IXFN20N120P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 20A; SOT227B; screw; Idm: 50A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 20A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 570mΩ
Pulsed drain current: 50A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 193nC
Kind of channel: enhancement
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1228.10 грн
3+1107.42 грн
В кошику  од. на суму  грн.
IXFH34N60X2A IXFH34N60X2A.pdf
IXFH34N60X2A
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 600V; 34A; Idm: 68A; 540W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 34A
Pulsed drain current: 68A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Technology: HiPerFET™; X2-Class
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 164ns
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+492.48 грн
В кошику  од. на суму  грн.
IXFK64N60Q3 IXFK(X)64N60Q3.pdf
IXFK64N60Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 64A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 64A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1015.13 грн
3+941.80 грн
В кошику  од. на суму  грн.
IXTP14N60X2 ixty2n65x2.pdf
IXTP14N60X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 16.7nC
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+410.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXXH30N60B3D1 IXXH30N60B3D1-DTE.pdf
IXXH30N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 23ns
Turn-off time: 125ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 115A
Technology: GenX3™; Planar; XPT™
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+467.64 грн
5+404.57 грн
В кошику  од. на суму  грн.
IXXN110N65B4H1 IXXN110N65B4H1.pdf
IXXN110N65B4H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX4™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 650A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXXN110N65C4H1 IXXN110N65C4H1.pdf
IXXN110N65C4H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 650V; Ic: 110A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 750W
Case: SOT227B
Type of semiconductor module: IGBT
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 470A
Max. off-state voltage: 650V
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXXR110N65B4H1 IXXR110N65B4H1.pdf
IXXR110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 70A; 455W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 455W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 70A
Gate-emitter voltage: ±20V
Pulsed collector current: 490A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
товару немає в наявності
В кошику  од. на суму  грн.
IXXX110N65B4H1 IXX_110N65B4H1.pdf
IXXX110N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 110A; 880W; PLUS247™
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 880W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector current: 110A
Gate-emitter voltage: ±20V
Pulsed collector current: 570A
Collector-emitter voltage: 650V
Turn-off time: 250ns
Gate charge: 183nC
Turn-on time: 65ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTH30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTH30N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO247-3
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
на замовлення 276 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+738.28 грн
3+636.93 грн
10+529.81 грн
30+491.91 грн
В кошику  од. на суму  грн.
IXTQ30N60L2 IXT_30N60L2.pdf
IXTQ30N60L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Features of semiconductor devices: linear power mosfet
Gate charge: 335nC
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTQ30N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO3P
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N60L2 IXT_30N60L2.pdf
IXTT30N60L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 600V; 30A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Power dissipation: 540W
Technology: Linear L2™
Gate charge: 335nC
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N60P IXTH(Q,T,V)30N60P_S.pdf
IXTT30N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 540W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Case: TO268
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Power dissipation: 540W
Features of semiconductor devices: standard power mosfet
Gate charge: 82nC
товару немає в наявності
В кошику  од. на суму  грн.
IXXH30N60C3D1 IXXH30N60C3D1.pdf
IXXH30N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 30A
Gate-emitter voltage: ±20V
Power dissipation: 270W
Pulsed collector current: 110A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 37ns
Gate charge: 37nC
Turn-off time: 166ns
товару немає в наявності
В кошику  од. на суму  грн.
IXXQ30N60B3M IXXQ30N60B3M.pdf
IXXQ30N60B3M
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 19A; 90W; TO3PF
Type of transistor: IGBT
Case: TO3PF
Mounting: THT
Kind of package: tube
Collector current: 19A
Gate-emitter voltage: ±20V
Power dissipation: 90W
Pulsed collector current: 140A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Turn-on time: 57ns
Gate charge: 39nC
Turn-off time: 292ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTA15N50L2 IXTA(H,P)15N50L2.pdf
IXTA15N50L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO263; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 570ns
Features of semiconductor devices: linear power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTH15N50L2 IXTA(H,P)15N50L2.pdf
IXTH15N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO247-3; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO247-3
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 570ns
Features of semiconductor devices: linear power mosfet
на замовлення 230 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+732.07 грн
30+454.83 грн
В кошику  од. на суму  грн.
IXTP15N50L2 IXTA(H,P)15N50L2.pdf
IXTP15N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 15A; 300W; TO220AB; 570ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 15A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.48Ω
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 570ns
Features of semiconductor devices: linear power mosfet
на замовлення 269 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+678.82 грн
5+510.86 грн
10+445.77 грн
50+423.52 грн
В кошику  од. на суму  грн.
IXFK48N60P IXF_48N60P.pdf
IXFK48N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 830W
Case: TO264
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1015.13 грн
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 26 52 78 104 130 156 182 208 234 248 249 250 251 252 253 254 255 256 257 258 260 262  [ Наступна Сторінка >> ]