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VHFD37-08IO1 IXYS VHFD37-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 40A; Ifsm: 280A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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VHFD16-12IO1 IXYS VHFD16.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 21A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 21A
Max. forward impulse current: 130A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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VHFD16-16IO1 IXYS VHFD16.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 21A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 21A
Max. forward impulse current: 130A
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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VHFD37-12IO1 VHFD37-12IO1 IXYS VHFD37.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 40A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.5kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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IXTH6N150 IXTH6N150 IXYS IXTH(T)6N150.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO247-3; 1.5us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 6A
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.5µs
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LDA200S LDA200S IXYS LDA200.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; Uinsul: 3.75kV; CTR@If: 33-1000%@1mA; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Collector-emitter voltage: 500mV
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
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LDA200STR LDA200STR IXYS LDA200.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; Uinsul: 3.75kV; CTR@If: 33-1000%@1mA; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Collector-emitter voltage: 500mV
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
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 Мінімальне замовлення: 1000 шт
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IX4310N IX4310N IXYS Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...24V
Output current: -2...2A
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
на замовлення 1672 шт:
термін постачання 14-30 дні (днів)
4+114.87 грн
10+65.10 грн
25+54.94 грн
100+43.09 грн
300+36.23 грн
500+33.61 грн
1000+30.81 грн
Мінімальне замовлення: 4 шт
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IXTP8N65X2M IXTP8N65X2M IXYS IXTP8N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 32W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
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CLA80MT1200NHR CLA80MT1200NHR IXYS CLA80MT1200NHR.pdf Category: Triacs
Description: Triac; 1.2kV; 40A; Igt: 70/90mA; ISO247™; tube; Ifsm: 440A
Max. forward impulse current: 0.44kA
Gate current: 70/90mA
Max. off-state voltage: 1.2kV
Max. load current: 40A
Kind of package: tube
Case: ISO247™
Typ of triac: standard
Mounting: THT
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IX3407BTR IXYS ix3407b-data-sheet?assetguid=632d672d-8e95-4a4d-9c59-e4c1d5a326d7 Category: MOSFET/IGBT drivers
Description: IC: driver; SOIC8; Ch: 1; 2.5kV; 1.25W
Type of integrated circuit: driver
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...125°C
Pulse fall time: 10ns
Impulse rise time: 10ns
Power dissipation: 1.25W
Insulation voltage: 2.5kV
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 Мінімальне замовлення: 1000 шт
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IXFH26N65X2 IXFH26N65X2 IXYS K248734.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
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IXTP50N20P IXTP50N20P IXYS IXTA50N20P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
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 Мінімальне замовлення: 300 шт
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CPC3909CTR CPC3909CTR IXYS CPC3909.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89
Kind of package: reel; tape
Kind of channel: depletion
Mounting: SMD
Case: SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.3A
Power dissipation: 1.1W
On-state resistance: 9Ω
Gate-source voltage: ±15V
Drain-source voltage: 400V
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MEE250-12DA IXYS MEx250-12DA.pdf PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 260A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.54V
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DHG55I3300FE DHG55I3300FE IXYS media?resourcetype=datasheets&itemid=f4778fd3-9be4-4357-a6ee-3f2091f2a007&filename=Littelfuse-Power-Semiconductors-DHG55I3300FE-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 3.3kV; 50A; tube; Ifsm: 600A; Ufmax: 3.4V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 3.3kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.6kA
Case: ISOPLUS i4-pac™ x024e
Max. forward voltage: 3.4V
Technology: Sonic FRD™
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 Мінімальне замовлення: 25 шт
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IXFN32N100Q3 IXFN32N100Q3 IXYS IXFN32N100Q3.pdf Category: Transistor modules
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.32Ω
Pulsed drain current: 96A
Power dissipation: 780W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhancement
Gate charge: 195nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
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CPC3710CTR CPC3710CTR IXYS CPC3710.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Drain current: 0.22A
Kind of channel: depletion
Drain-source voltage: 250V
Gate-source voltage: ±15V
On-state resistance: 10Ω
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VGB0124AY7A VGB0124AY7A IXYS VGB, F.pdf Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 1.4kV
Load current: 1A
Max. forward impulse current: 60A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-A
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
1+7843.65 грн
В кошику  од. на суму  грн.
LDA102S IXYS LDA102.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 50-350%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Collector-emitter voltage: 500mV
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
товару немає в наявності
 Мінімальне замовлення: 100 шт
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MIXA61H1200ED IXYS MIXA61H1200ED.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Pulsed collector current: 150A
Collector current: 60A
Power dissipation: 290W
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MIXA61WB1200TEH IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Case: E3-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: XPT™
Collector current: 190A
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IXFR18N90P IXFR18N90P IXYS IXFR18N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 10.5A
Pulsed drain current: 36A
Power dissipation: 200W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
1+1006.44 грн
3+839.74 грн
10+738.16 грн
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IXYY8N90C3 IXYY8N90C3 IXYS IXYP(y)8N90C3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252
Type of transistor: IGBT
Power dissipation: 125W
Case: TO252
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector current: 8A
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Gate-emitter voltage: ±20V
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IXYA8N90C3D1 IXYA8N90C3D1 IXYS IXYA(P)8N90C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector current: 8A
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Gate-emitter voltage: ±20V
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IXYY8N90C3-TRL IXYY8N90C3-TRL IXYS littelfuse-discrete-igbts-ixy-8n90c3-datasheet?assetguid=11d4bd5c-8ae2-405e-8bec-58f631ef5fbe Category: SMD IGBT transistors
Description: Transistor: IGBT; 900V; 20A; 125W; DPAK
Type of transistor: IGBT
Power dissipation: 125W
Case: DPAK
Mounting: SMD
Gate charge: 13.3nC
Kind of package: reel; tape
Collector current: 20A
Collector-emitter voltage: 900V
Pulsed collector current: 48A
Gate-emitter voltage: ±20V
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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IXFH18N90P IXFH18N90P IXYS IXFH(T,V)18N90P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 18A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
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IXFX300N20X3 IXFX300N20X3 IXYS IXF_300N20X3.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
Technology: HiPerFET™; X3-Class
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
1+2124.09 грн
10+1815.77 грн
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IXFH150N25X3 IXFH150N25X3 IXYS IXFH150N25X3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: HiPerFET™; X3-Class
Features of semiconductor devices: ultra junction x-class
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+1050.20 грн
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IXFN300N20X3 IXFN300N20X3 IXYS IXFN300N20X3.pdf 200VProductBrief.pdf Category: Transistor modules
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 300A
Electrical mounting: screw
On-state resistance: 3.5mΩ
Pulsed drain current: 700A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT227B
Reverse recovery time: 172ns
Gate charge: 375nC
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IXFN150N65X2 IXFN150N65X2 IXYS IXFN150N65X2.pdf Category: Transistor modules
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 145A
Electrical mounting: screw
On-state resistance: 17mΩ
Pulsed drain current: 300A
Power dissipation: 1.04kW
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT227B
Reverse recovery time: 190ns
Gate charge: 355nC
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IXFN100N50Q3 IXFN100N50Q3 IXYS IXFN100N50Q3.pdf Category: Transistor modules
Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 82A
Electrical mounting: screw
On-state resistance: 49mΩ
Pulsed drain current: 300A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT227B
Reverse recovery time: 250ns
Gate charge: 255nC
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IXTA300N04T2 IXTA300N04T2 IXYS IXTA(P)300N04T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO263
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Features of semiconductor devices: thrench gate power mosfet
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IXTH300N04T2 IXTH300N04T2 IXYS IXTH300N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO247-3; 53ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Features of semiconductor devices: thrench gate power mosfet
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IXTP300N04T2 IXTP300N04T2 IXYS IXTA(P)300N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO220AB; 53ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Features of semiconductor devices: thrench gate power mosfet
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 Мінімальне замовлення: 50 шт
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IXTP3N50D2 IXTP3N50D2 IXYS IXTA(P)3N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
2+349.15 грн
10+212.47 грн
50+195.54 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
MDMA660U1600PTEH MDMA660U1600PTEH IXYS MDMA660U1600PTEH.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Electrical mounting: Press-Fit
Max. forward impulse current: 5kA
Version: module
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Load current: 660A
Case: E3-Pack
Type of bridge rectifier: three-phase
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
1+18132.28 грн
3+15084.84 грн
5+13332.56 грн
В кошику  од. на суму  грн.
IXFH30N50P IXFH30N50P IXYS IXFH30N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
на замовлення 244 шт:
термін постачання 14-30 дні (днів)
1+742.98 грн
3+634.04 грн
5+595.94 грн
10+538.38 грн
30+451.19 грн
60+436.80 грн
В кошику  од. на суму  грн.
IXFH30N50Q3 IXFH30N50Q3 IXYS IXFH30N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
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IXTQ30N50L2 IXTQ30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTH30N50P IXTH30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTQ30N50L IXTQ30N50L IXYS IXTH(Q,T)30N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTQ30N50P IXTQ30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXFT30N50P IXFT30N50P IXYS IXFH30N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXFT30N50Q3 IXFT30N50Q3 IXYS IXFH30N50Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
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IXTT30N50L IXTT30N50L IXYS IXTH(Q,T)30N50L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT30N50L2 IXTT30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTT30N50P IXTT30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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MCC72-16io8B MCC72-16io8B IXYS L076.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 115Ax2; TO240AA; screw
Case: TO240AA
Kind of package: bulk
Type of semiconductor module: thyristor
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.74V
Load current: 115A x2
Max. forward impulse current: 1.54kA
Max. off-state voltage: 1.6kV
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
1+3101.36 грн
3+2590.33 грн
10+2399.86 грн
В кошику  од. на суму  грн.
CPC1945G CPC1945G IXYS CPC1945G.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Case: DIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
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IXFP6N120P IXFP6N120P IXYS IXFA(H,P)6N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Power dissipation: 250W
Gate charge: 92nC
Polarisation: unipolar
Drain current: 6A
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
1+783.09 грн
3+664.51 грн
10+562.08 грн
В кошику  од. на суму  грн.
IXFN90N85X IXFN90N85X IXYS IXFN90N85X.pdf Category: Transistor modules
Description: Module; single transistor; 850V; 90A; SOT227B; screw; Idm: 180A
Drain-source voltage: 850V
Drain current: 90A
Power dissipation: 1.2kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 41mΩ
Kind of channel: enhancement
Pulsed drain current: 180A
Technology: HiPerFET™; X-Class
Type of semiconductor module: MOSFET transistor
Polarisation: unipolar
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate charge: 340nC
Reverse recovery time: 250ns
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LAA100PLTR IXYS LAA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LAA100PTR IXYS LAA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LAA100LSTR IXYS LAA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LAA100PL LAA100PL IXYS LAA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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LAA100STR IXYS LAA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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IXDN604SIA IXDN604SIA IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 458 шт:
термін постачання 14-30 дні (днів)
4+132.19 грн
10+90.58 грн
25+84.65 грн
50+82.11 грн
100+80.42 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IXDN609CI IXDN609CI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 1024 шт:
термін постачання 14-30 дні (днів)
2+240.67 грн
10+167.61 грн
25+156.60 грн
50+155.76 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXDN609YI IXDN609YI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 788 шт:
термін постачання 14-30 дні (днів)
2+235.20 грн
10+184.54 грн
50+156.60 грн
100+147.29 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
VHFD37-08IO1 VHFD37-ser.pdf
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 800V; If: 40A; Ifsm: 280A
Type of bridge rectifier: half-controlled
Max. off-state voltage: 0.8kV
Load current: 40A
Max. forward impulse current: 280A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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VHFD16-12IO1 VHFD16.pdf
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 21A; screw
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 21A
Max. forward impulse current: 130A
Gate current: 50/80mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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VHFD16-16IO1 VHFD16.pdf
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 21A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 21A
Max. forward impulse current: 130A
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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VHFD37-12IO1 VHFD37.pdf
VHFD37-12IO1
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 40A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.5kA
Gate current: 65mA
Electrical mounting: FASTON connectors
Mechanical mounting: screw
Version: module
Case: V1-A-Pack
Leads: connectors
Leads dimensions: 2x0.5mm
Features of semiconductor devices: field diodes; freewheelling diode
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IXTH6N150 IXTH(T)6N150.pdf
IXTH6N150
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 6A; 540W; TO247-3; 1.5us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 6A
Power dissipation: 540W
Case: TO247-3
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.5µs
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LDA200S LDA200.pdf
LDA200S
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; Uinsul: 3.75kV; CTR@If: 33-1000%@1mA; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Collector-emitter voltage: 500mV
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
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LDA200STR LDA200.pdf
LDA200STR
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 2; Uinsul: 3.75kV; CTR@If: 33-1000%@1mA; 1A
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 2
Insulation voltage: 3.75kV
CTR@If: 33-1000%@1mA
Collector-emitter voltage: 500mV
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 1A
товару немає в наявності
Мінімальне замовлення: 1000 шт
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IX4310N
IX4310N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -2÷2A; Ch: 2; 5÷24V
Type of integrated circuit: driver
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 5...24V
Output current: -2...2A
Kind of output: non-inverting
Kind of integrated circuit: gate driver; low-side
Number of channels: 2
на замовлення 1672 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+114.87 грн
10+65.10 грн
25+54.94 грн
100+43.09 грн
300+36.23 грн
500+33.61 грн
1000+30.81 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IXTP8N65X2M IXTP8N65X2M.pdf
IXTP8N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 32W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 200ns
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В кошику  од. на суму  грн.
CLA80MT1200NHR CLA80MT1200NHR.pdf
CLA80MT1200NHR
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 40A; Igt: 70/90mA; ISO247™; tube; Ifsm: 440A
Max. forward impulse current: 0.44kA
Gate current: 70/90mA
Max. off-state voltage: 1.2kV
Max. load current: 40A
Kind of package: tube
Case: ISO247™
Typ of triac: standard
Mounting: THT
товару немає в наявності
В кошику  од. на суму  грн.
IX3407BTR ix3407b-data-sheet?assetguid=632d672d-8e95-4a4d-9c59-e4c1d5a326d7
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; SOIC8; Ch: 1; 2.5kV; 1.25W
Type of integrated circuit: driver
Number of channels: 1
Mounting: SMD
Case: SOIC8
Operating temperature: -40...125°C
Pulse fall time: 10ns
Impulse rise time: 10ns
Power dissipation: 1.25W
Insulation voltage: 2.5kV
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXFH26N65X2 K248734.pdf
IXFH26N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
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IXTP50N20P IXTA50N20P-DTE.pdf
IXTP50N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 50A; 360W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Power dissipation: 360W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
CPC3909CTR CPC3909.pdf
CPC3909CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 0.3A; 1.1W; SOT89
Kind of package: reel; tape
Kind of channel: depletion
Mounting: SMD
Case: SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.3A
Power dissipation: 1.1W
On-state resistance: 9Ω
Gate-source voltage: ±15V
Drain-source voltage: 400V
товару немає в наявності
В кошику  од. на суму  грн.
MEE250-12DA MEx250-12DA.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Load current: 260A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.54V
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В кошику  од. на суму  грн.
DHG55I3300FE media?resourcetype=datasheets&itemid=f4778fd3-9be4-4357-a6ee-3f2091f2a007&filename=Littelfuse-Power-Semiconductors-DHG55I3300FE-Datasheet
DHG55I3300FE
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 3.3kV; 50A; tube; Ifsm: 600A; Ufmax: 3.4V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 3.3kV
Load current: 50A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 0.6kA
Case: ISOPLUS i4-pac™ x024e
Max. forward voltage: 3.4V
Technology: Sonic FRD™
товару немає в наявності
Мінімальне замовлення: 25 шт
В кошику  од. на суму  грн.
IXFN32N100Q3 IXFN32N100Q3.pdf
IXFN32N100Q3
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 1kV; 28A; SOT227B; screw; Idm: 96A; 780W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 28A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.32Ω
Pulsed drain current: 96A
Power dissipation: 780W
Technology: HiPerFET™; Q3-Class
Kind of channel: enhancement
Gate charge: 195nC
Reverse recovery time: 300ns
Gate-source voltage: ±40V
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
CPC3710CTR CPC3710.pdf
CPC3710CTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 0.22A; 1.4W; SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.4W
Drain current: 0.22A
Kind of channel: depletion
Drain-source voltage: 250V
Gate-source voltage: ±15V
On-state resistance: 10Ω
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VGB0124AY7A VGB, F.pdf
VGB0124AY7A
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: braking rectifier assemblies; Urmax: 1.4kV
Type of bridge rectifier: braking rectifier assemblies
Max. off-state voltage: 1.4kV
Load current: 1A
Max. forward impulse current: 60A
Electrical mounting: screw
Mechanical mounting: screw
Version: module
Case: VG-A
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+7843.65 грн
В кошику  од. на суму  грн.
LDA102S LDA102.pdf
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 50-350%@1mA; 50mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
CTR@If: 50-350%@1mA
Collector-emitter voltage: 500mV
Turn-on time: 7µs
Turn-off time: 20µs
Trigger current: 50mA
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику  од. на суму  грн.
MIXA61H1200ED MIXA61H1200ED.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1.2kV; 290W
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: H-bridge
Max. off-state voltage: 1.2kV
Case: E2-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Mechanical mounting: screw
Technology: Sonic FRD™; XPT™
Pulsed collector current: 150A
Collector current: 60A
Power dissipation: 290W
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MIXA61WB1200TEH
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; XPT™
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Case: E3-Pack
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: XPT™
Collector current: 190A
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В кошику  од. на суму  грн.
IXFR18N90P IXFR18N90P.pdf
IXFR18N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 10.5A
Pulsed drain current: 36A
Power dissipation: 200W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1006.44 грн
3+839.74 грн
10+738.16 грн
В кошику  од. на суму  грн.
IXYY8N90C3 IXYP(y)8N90C3.pdf
IXYY8N90C3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO252
Type of transistor: IGBT
Power dissipation: 125W
Case: TO252
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector current: 8A
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Gate-emitter voltage: ±20V
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IXYA8N90C3D1 IXYA(P)8N90C3D1.pdf
IXYA8N90C3D1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 13.3nC
Kind of package: tube
Collector current: 8A
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 48A
Turn-on time: 39ns
Turn-off time: 238ns
Gate-emitter voltage: ±20V
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IXYY8N90C3-TRL littelfuse-discrete-igbts-ixy-8n90c3-datasheet?assetguid=11d4bd5c-8ae2-405e-8bec-58f631ef5fbe
IXYY8N90C3-TRL
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 900V; 20A; 125W; DPAK
Type of transistor: IGBT
Power dissipation: 125W
Case: DPAK
Mounting: SMD
Gate charge: 13.3nC
Kind of package: reel; tape
Collector current: 20A
Collector-emitter voltage: 900V
Pulsed collector current: 48A
Gate-emitter voltage: ±20V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IXFH18N90P IXFH(T,V)18N90P_S.pdf
IXFH18N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 18A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 18A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
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IXFX300N20X3 IXF_300N20X3.pdf 200VProductBrief.pdf
IXFX300N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 300A; 1250W; 170ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 300A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: THT
Gate charge: 375nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 170ns
Technology: HiPerFET™; X3-Class
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2124.09 грн
10+1815.77 грн
В кошику  од. на суму  грн.
IXFH150N25X3 IXFH150N25X3.pdf
IXFH150N25X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 250V; 150A; Idm: 300A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 150A
Pulsed drain current: 300A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: HiPerFET™; X3-Class
Features of semiconductor devices: ultra junction x-class
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1050.20 грн
В кошику  од. на суму  грн.
IXFN300N20X3 IXFN300N20X3.pdf 200VProductBrief.pdf
IXFN300N20X3
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 200V; 300A; SOT227B; screw; Idm: 700A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 300A
Electrical mounting: screw
On-state resistance: 3.5mΩ
Pulsed drain current: 700A
Power dissipation: 695W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT227B
Reverse recovery time: 172ns
Gate charge: 375nC
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IXFN150N65X2 IXFN150N65X2.pdf
IXFN150N65X2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 650V; 145A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 650V
Drain current: 145A
Electrical mounting: screw
On-state resistance: 17mΩ
Pulsed drain current: 300A
Power dissipation: 1.04kW
Technology: HiPerFET™; X2-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT227B
Reverse recovery time: 190ns
Gate charge: 355nC
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IXFN100N50Q3 IXFN100N50Q3.pdf
IXFN100N50Q3
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 82A; SOT227B; screw; Idm: 300A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 82A
Electrical mounting: screw
On-state resistance: 49mΩ
Pulsed drain current: 300A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Polarisation: unipolar
Kind of channel: enhancement
Case: SOT227B
Reverse recovery time: 250ns
Gate charge: 255nC
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IXTA300N04T2 IXTA(P)300N04T2.pdf
IXTA300N04T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO263; 53ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO263
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Features of semiconductor devices: thrench gate power mosfet
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В кошику  од. на суму  грн.
IXTH300N04T2 IXTH300N04T2.pdf
IXTH300N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO247-3; 53ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Features of semiconductor devices: thrench gate power mosfet
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В кошику  од. на суму  грн.
IXTP300N04T2 IXTA(P)300N04T2.pdf
IXTP300N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 300A; 480W; TO220AB; 53ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 300A
Power dissipation: 480W
Case: TO220AB
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 53ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику  од. на суму  грн.
IXTP3N50D2 IXTA(P)3N50D2.pdf
IXTP3N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3A; 125W; TO220AB; 24ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 1.07µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 24ns
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+349.15 грн
10+212.47 грн
50+195.54 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
MDMA660U1600PTEH MDMA660U1600PTEH.pdf
MDMA660U1600PTEH
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; 1.6kV; If: 660A; Ifsm: 5kA; module
Electrical mounting: Press-Fit
Max. forward impulse current: 5kA
Version: module
Mechanical mounting: screw
Max. off-state voltage: 1.6kV
Load current: 660A
Case: E3-Pack
Type of bridge rectifier: three-phase
на замовлення 16 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+18132.28 грн
3+15084.84 грн
5+13332.56 грн
В кошику  од. на суму  грн.
IXFH30N50P IXFH30N50P.pdf
IXFH30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
на замовлення 244 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+742.98 грн
3+634.04 грн
5+595.94 грн
10+538.38 грн
30+451.19 грн
60+436.80 грн
В кошику  од. на суму  грн.
IXFH30N50Q3 IXFH30N50Q3.pdf
IXFH30N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
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В кошику  од. на суму  грн.
IXTQ30N50L2 IXTH(Q,T)30N50L2.pdf
IXTQ30N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTH30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTH30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
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IXTQ30N50L IXTH(Q,T)30N50L.pdf
IXTQ30N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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IXTQ30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTQ30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFT30N50P IXFH30N50P.pdf
IXFT30N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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IXFT30N50Q3 IXFH30N50Q3.pdf
IXFT30N50Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXTT30N50L IXTH(Q,T)30N50L.pdf
IXTT30N50L
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N50L2 IXTH(Q,T)30N50L2.pdf
IXTT30N50L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTT30N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товару немає в наявності
В кошику  од. на суму  грн.
MCC72-16io8B L076.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC72-16io8B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 115Ax2; TO240AA; screw
Case: TO240AA
Kind of package: bulk
Type of semiconductor module: thyristor
Semiconductor structure: double series
Mechanical mounting: screw
Electrical mounting: screw
Gate current: 150/200mA
Max. forward voltage: 1.74V
Load current: 115A x2
Max. forward impulse current: 1.54kA
Max. off-state voltage: 1.6kV
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+3101.36 грн
3+2590.33 грн
10+2399.86 грн
В кошику  од. на суму  грн.
CPC1945G CPC1945G.pdf
CPC1945G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.400VAC; 1-phase
Case: DIP4
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 1A
Switched voltage: max. 400V AC
Relay variant: 1-phase
Insulation voltage: 3.75kV
товару немає в наявності
В кошику  од. на суму  грн.
IXFP6N120P IXFA(H,P)6N120P.pdf
IXFP6N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 6A; 250W; TO220AB
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Power dissipation: 250W
Gate charge: 92nC
Polarisation: unipolar
Drain current: 6A
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+783.09 грн
3+664.51 грн
10+562.08 грн
В кошику  од. на суму  грн.
IXFN90N85X IXFN90N85X.pdf
IXFN90N85X
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 850V; 90A; SOT227B; screw; Idm: 180A
Drain-source voltage: 850V
Drain current: 90A
Power dissipation: 1.2kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 41mΩ
Kind of channel: enhancement
Pulsed drain current: 180A
Technology: HiPerFET™; X-Class
Type of semiconductor module: MOSFET transistor
Polarisation: unipolar
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate charge: 340nC
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
LAA100PLTR LAA100L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LAA100PTR LAA100.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LAA100LSTR LAA100L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LAA100PL LAA100L.pdf
LAA100PL
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
LAA100STR LAA100.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXDN604SIA IXDD604PI.pdf
IXDN604SIA
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 458 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+132.19 грн
10+90.58 грн
25+84.65 грн
50+82.11 грн
100+80.42 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
IXDN609CI IXDD609CI.pdf
IXDN609CI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 1024 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+240.67 грн
10+167.61 грн
25+156.60 грн
50+155.76 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXDN609YI IXDD609CI.pdf
IXDN609YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 788 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+235.20 грн
10+184.54 грн
50+156.60 грн
100+147.29 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
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