| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DSP45-18A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.8kV; 45A; tube; Ifsm: 480A; TO247-3 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.8kV Load current: 45A Semiconductor structure: double Kind of package: tube Max. forward impulse current: 0.48kA Case: TO247-3 Max. forward voltage: 1.26V |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
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IXTH30N50L2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 30A Power dissipation: 400W Case: TO247-3 On-state resistance: 0.215Ω Mounting: THT Gate charge: 240nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: linear power mosfet Reverse recovery time: 0.5µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSI30-12AS-TRL | IXYS |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK,TO263AB; Ufmax: 1.29V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Case: D2PAK; TO263AB Max. forward voltage: 1.29V Max. forward impulse current: 0.3kA Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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IXTA260N055T2 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns Case: TO263 Mounting: SMD Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Polarisation: unipolar Gate charge: 0.14µC Reverse recovery time: 60ns On-state resistance: 3.3mΩ Drain current: 260A Power dissipation: 480W Drain-source voltage: 55V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTA260N055T2-7 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns Case: TO263-7 Mounting: SMD Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Polarisation: unipolar Gate charge: 0.14µC Reverse recovery time: 60ns On-state resistance: 3.3mΩ Drain current: 260A Power dissipation: 480W Drain-source voltage: 55V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTH260N055T2 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns Case: TO247-3 Mounting: THT Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Polarisation: unipolar Gate charge: 0.14µC Reverse recovery time: 60ns On-state resistance: 3.3mΩ Drain current: 260A Power dissipation: 480W Drain-source voltage: 55V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PLA132S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC Contacts configuration: SPST-NO Operating temperature: -40...85°C Case: DIP6 Kind of output: MOSFET Mounting: SMT Type of relay: solid state Turn-off time: 2ms Turn-on time: 5ms Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 0.6A On-state resistance: 1Ω Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source Insulation voltage: 3.75kV Manufacturer series: OptoMOS |
на замовлення 143 шт: термін постачання 14-30 дні (днів) |
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PAA132S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC Contacts configuration: SPST-NO x2 Operating temperature: -40...85°C Case: DIP8 Kind of output: MOSFET Mounting: SMT Type of relay: solid state Turn-off time: 2ms Turn-on time: 5ms Body dimensions: 9.65x6.35x3.3mm Control current max.: 50mA Max. operating current: 0.6A On-state resistance: 1Ω Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source Insulation voltage: 3.75kV Manufacturer series: OptoMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| PAA132STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC Contacts configuration: SPST-NO x2 Operating temperature: -40...85°C Case: DIP8 Kind of output: MOSFET Mounting: SMT Type of relay: solid state Turn-off time: 2ms Turn-on time: 5ms Body dimensions: 9.65x6.35x3.3mm Control current max.: 50mA Max. operating current: 0.6A On-state resistance: 1Ω Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source Insulation voltage: 3.75kV Manufacturer series: OptoMOS |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
| PLA132STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC Contacts configuration: SPST-NO Operating temperature: -40...85°C Case: DIP6 Kind of output: MOSFET Mounting: SMT Type of relay: solid state Turn-off time: 2ms Turn-on time: 5ms Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA Max. operating current: 0.6A On-state resistance: 1Ω Switched voltage: max. 60V AC; max. 60V DC Relay variant: 1-phase; current source Insulation voltage: 3.75kV Manufacturer series: OptoMOS |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
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MCC56-14io1B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 60A Case: TO240AA Max. forward voltage: 1.62V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
на замовлення 17 шт: термін постачання 14-30 дні (днів) |
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DPG30C300PB | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Type of diode: rectifying Mounting: THT Case: TO220AB Kind of package: tube Reverse recovery time: 35ns Heatsink thickness: 1.14...1.39mm Max. forward voltage: 1.26V Load current: 15A x2 Power dissipation: 90W Max. forward impulse current: 0.24kA Max. off-state voltage: 300V |
на замовлення 148 шт: термін постачання 14-30 дні (днів) |
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DPG20C300PB | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Technology: HiPerFRED™ 2nd Gen Type of diode: rectifying Mounting: THT Case: TO220AB Kind of package: tube Reverse recovery time: 35ns Heatsink thickness: 1.14...1.39mm Max. forward voltage: 1.27V Load current: 10A x2 Power dissipation: 65W Max. forward impulse current: 140A Max. off-state voltage: 300V |
на замовлення 137 шт: термін постачання 14-30 дні (днів) |
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| DSSK28-01AS-TRL | IXYS |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 15A Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 0.1kV Load current: 15A Semiconductor structure: common cathode Capacitance: 334pF Max. forward voltage: 0.82V Leakage current: 0.5mA Max. forward impulse current: 230A Kind of package: reel; tape |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | |||||||||||||
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IXGX55N120A3H1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™ Case: PLUS247™ Mounting: THT Technology: GenX3™; PT Type of transistor: IGBT Kind of package: tube Turn-on time: 70ns Gate charge: 185nC Turn-off time: 1253ns Gate-emitter voltage: ±20V Pulsed collector current: 400A Power dissipation: 460W Collector-emitter voltage: 1.2kV Collector current: 55A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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OMA160S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Insulation voltage: 3.75kV Case: DIP6 Mounting: SMT Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-off time: 125µs Turn-on time: 125µs Body dimensions: 8.38x6.35x3.3mm Max. operating current: 50mA Control current max.: 50mA On-state resistance: 100Ω Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| OMA160STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC Insulation voltage: 3.75kV Case: DIP6 Mounting: SMT Manufacturer series: OptoMOS Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-off time: 125µs Turn-on time: 125µs Body dimensions: 8.38x6.35x3.3mm Max. operating current: 50mA Control current max.: 50mA On-state resistance: 100Ω Switched voltage: max. 250V AC; max. 250V DC Relay variant: 1-phase; current source |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
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CLA60MT1200NTZ | IXYS |
Category: TriacsDescription: Triac; 1.2kV; 30A; D3PAK; Igt: 60/80mA; Ifsm: 325A Max. off-state voltage: 1.2kV Max. forward impulse current: 325A Case: D3PAK Kind of package: tube Mounting: SMD Gate current: 60/80mA Max. load current: 30A Type of thyristor: triac |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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IXTH1N450HV | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us Case: TO247-3 Mounting: THT Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 46nC Reverse recovery time: 1.75µs Drain current: 1A On-state resistance: 80Ω Power dissipation: 520W Drain-source voltage: 4.5kV Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
на замовлення 8 шт: термін постачання 14-30 дні (днів) |
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IXTT02N450HV | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us Case: TO268HV Mounting: SMD Kind of package: tube Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.6µs Drain current: 0.2A On-state resistance: 625Ω Power dissipation: 113W Drain-source voltage: 4.5kV Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
на замовлення 120 шт: термін постачання 14-30 дні (днів) |
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IXTT1N450HV | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us Case: TO268HV Mounting: SMD Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 46nC Reverse recovery time: 1.75µs Drain current: 1A On-state resistance: 80Ω Power dissipation: 520W Drain-source voltage: 4.5kV Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXYX40N450HV | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; XPT™; 4.5kV; 40A; 660W; TO247HV Case: TO247HV Mounting: THT Kind of package: tube Features of semiconductor devices: high voltage Technology: XPT™ Gate charge: 170nC Turn-on time: 786ns Turn-off time: 1128ns Gate-emitter voltage: ±20V Collector current: 40A Power dissipation: 660W Pulsed collector current: 350A Collector-emitter voltage: 4.5kV Type of transistor: IGBT |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
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IXTH02N450HV | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us Case: TO247HV Mounting: THT Kind of package: tube Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.6µs Drain current: 0.2A On-state resistance: 625Ω Power dissipation: 113W Drain-source voltage: 4.5kV Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| IXTX1R4N450HV | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns Case: TO247PLUS-HV Mounting: THT Kind of package: tube Features of semiconductor devices: standard power mosfet Gate charge: 88nC Reverse recovery time: 660ns Drain current: 1.4A Pulsed drain current: 5A Gate-source voltage: ±20V On-state resistance: 40Ω Power dissipation: 960W Drain-source voltage: 4.5kV Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IXKC23N60C5 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 147W Case: ISOPLUS220™ On-state resistance: 0.1Ω Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: super junction coolmos |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXBT12N300HV | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268 Case: TO268 Mounting: SMD Features of semiconductor devices: high voltage Type of transistor: IGBT Gate charge: 62nC Turn-on time: 64ns Turn-off time: 180ns Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 98A Power dissipation: 160W Collector-emitter voltage: 3kV Technology: BiMOSFET™ |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
| MCD56-16io8B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk Mechanical mounting: screw Gate current: 100/200mA Threshold on-voltage: 0.85V Max. forward voltage: 1.24V Load current: 60A Max. load current: 100A Max. forward impulse current: 1.5kA Max. off-state voltage: 1.6kV Kind of package: bulk Case: TO240AA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCD56-16IO1B | IXYS |
Category: Diode - thyristor modulesDescription: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk Mechanical mounting: screw Gate current: 100/200mA Threshold on-voltage: 0.85V Max. forward voltage: 1.24V Load current: 60A Max. load current: 100A Max. forward impulse current: 1.5kA Max. off-state voltage: 1.6kV Kind of package: bulk Case: TO240AA Type of semiconductor module: diode-thyristor Semiconductor structure: double series Electrical mounting: FASTON connectors; screw Features of semiconductor devices: Kelvin terminal |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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MCC56-16io8B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 60A Case: TO240AA Max. forward voltage: 1.57V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw Max. forward impulse current: 1.6kA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CS20-16IO1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.6kV Max. load current: 31A Load current: 20A Gate current: 50mA Case: TO247AD Mounting: THT Kind of package: tube Max. forward impulse current: 260A |
на замовлення 151 шт: термін постачання 14-30 дні (днів) |
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CS30-12IO1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube Type of thyristor: thyristor Max. off-state voltage: 1.2kV Max. load current: 47A Load current: 30A Gate current: 55mA Case: TO247AD Mounting: THT Kind of package: tube Max. forward impulse current: 0.4kA |
на замовлення 224 шт: термін постачання 14-30 дні (днів) |
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CS30-16IO1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube Case: TO247AD Mounting: THT Kind of package: tube Gate current: 55mA Max. off-state voltage: 1.6kV Load current: 30A Max. load current: 47A Max. forward impulse current: 0.4kA Type of thyristor: thyristor |
на замовлення 90 шт: термін постачання 14-30 дні (днів) |
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CS30-14IO1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.4kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube Case: TO247AD Mounting: THT Kind of package: tube Gate current: 55mA Max. off-state voltage: 1.4kV Load current: 30A Max. load current: 47A Max. forward impulse current: 0.4kA Type of thyristor: thyristor |
на замовлення 231 шт: термін постачання 14-30 дні (днів) |
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CS20-12IO1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube Case: TO247AD Mounting: THT Kind of package: tube Gate current: 50mA Max. off-state voltage: 1.2kV Load current: 20A Max. load current: 31A Max. forward impulse current: 260A Type of thyristor: thyristor |
на замовлення 47 шт: термін постачання 14-30 дні (днів) |
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IXTH130N20T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W Type of transistor: N-MOSFET Technology: Trench™ Polarisation: unipolar Drain-source voltage: 200V Drain current: 75A Pulsed drain current: 320A Power dissipation: 830W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 150ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSA240X150NA | IXYS |
Category: Diode modulesDescription: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw Electrical mounting: screw Max. forward voltage: 0.85V Load current: 120A x2 Max. off-state voltage: 150V Max. forward impulse current: 1.6kA Max. load current: 240A Kind of package: tube Semiconductor structure: double independent Type of semiconductor module: diode Case: SOT227B Mechanical mounting: screw Features of semiconductor devices: Schottky |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| CPC3982TTR | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23 Power dissipation: 0.4W Mounting: SMD Case: SOT23 Kind of package: reel; tape Drain current: 0.15A Gate-source voltage: ±15V On-state resistance: 380Ω Drain-source voltage: 800V Kind of channel: depletion Type of transistor: N-MOSFET Polarisation: unipolar |
на замовлення 2200 шт: термін постачання 14-30 дні (днів) |
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IXFN120N65X2 | IXYS |
Category: Transistor driversDescription: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 108A Power dissipation: 890W Case: SOT227B Gate-source voltage: ±40V On-state resistance: 24mΩ Kind of channel: enhancement Pulsed drain current: 240A Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Gate charge: 240nC Reverse recovery time: 220ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PLA193 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PLA193E | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
на замовлення 250 шт: термін постачання 14-30 дні (днів) |
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PLA193S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
на замовлення 150 шт: термін постачання 14-30 дні (днів) |
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| PLA193STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 600V AC; max. 600V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 5ms Turn-off time: 5ms Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
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IXFH24N90P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 24A; 660W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 24A Case: TO247-3 On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 660W Gate charge: 130nC |
на замовлення 226 шт: термін постачання 14-30 дні (днів) |
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IXFR24N90P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 900V; 13A; 230W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 13A Case: ISOPLUS247™ On-state resistance: 0.46Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 230W Gate charge: 130nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSI30-16A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; TO220AC; 160W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 30A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.25V Max. forward impulse current: 255A Power dissipation: 160W Kind of package: tube |
на замовлення 80 шт: термін постачання 14-30 дні (днів) |
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DSI30-16AS | IXYS |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.6kV Load current: 30A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.25V Max. forward impulse current: 255A Power dissipation: 160W Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSI30-16AS-TUB | IXYS |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.6kV Load current: 30A Semiconductor structure: single diode Case: D2PAK Max. forward voltage: 1.25V Max. forward impulse current: 255A Power dissipation: 160W Kind of package: tube |
товару немає в наявності |
Мінімальне замовлення: 1400 шт В кошику од. на суму грн. | ||||||||||||
|
DPG30C400PB | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO220AB; 90W Mounting: THT Case: TO220AB Kind of package: tube Technology: HiPerFRED™ 2nd Gen Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Type of diode: rectifying Reverse recovery time: 45ns Heatsink thickness: 1.14...1.39mm Max. forward voltage: 1.39V Max. forward impulse current: 190A Load current: 15A x2 Power dissipation: 90W Max. off-state voltage: 0.4kV |
на замовлення 83 шт: термін постачання 14-30 дні (днів) |
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| MD16110A-DKM2MM | IXYS |
Category: Diode modulesDescription: Module: diode; double,common cathode; 1.6kV; If: 110A; package A Kind of package: bulk Semiconductor structure: common cathode; double Type of semiconductor module: diode Mechanical mounting: screw Case: package A Electrical mounting: screw Max. forward voltage: 1.6V Load current: 110A Max. load current: 170A Max. off-state voltage: 1.6kV Max. forward impulse current: 2.5kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DSA60C45HB | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V Type of diode: Schottky rectifying Max. off-state voltage: 45V Max. forward impulse current: 0.55kA Semiconductor structure: common cathode; double Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 160W Load current: 30A x2 Max. forward voltage: 0.66V |
на замовлення 296 шт: термін постачання 14-30 дні (днів) |
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DSA60C60PB | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward impulse current: 0.45kA Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 175W Heatsink thickness: 1.14...1.39mm Load current: 30A x2 Max. forward voltage: 0.77V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSA60C150PB | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO220AB; Ufmax: 0.8V Type of diode: Schottky rectifying Max. off-state voltage: 150V Max. forward impulse current: 390A Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 175W Heatsink thickness: 1.14...1.39mm Load current: 30A x2 Max. forward voltage: 0.8V |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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DSA60C100PB | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V Type of diode: Schottky rectifying Max. off-state voltage: 0.1kV Max. forward impulse current: 0.44kA Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 175W Heatsink thickness: 1.14...1.39mm Load current: 30A x2 Max. forward voltage: 0.78V |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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DSA60C45PB | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V Type of diode: Schottky rectifying Max. off-state voltage: 45V Max. forward impulse current: 490A Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 175W Heatsink thickness: 1.14...1.39mm Load current: 30A x2 Max. forward voltage: 0.67V |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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DSA60C60HB | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward impulse current: 0.55kA Semiconductor structure: common cathode; double Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 160W Load current: 30A x2 Max. forward voltage: 0.75V |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
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DSA30C45PC | IXYS |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape; 85W Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.63V Max. forward impulse current: 340A Kind of package: reel; tape Power dissipation: 85W |
на замовлення 687 шт: термін постачання 14-30 дні (днів) |
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IXGX82N120A3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 580A Mounting: THT Gate charge: 340nC Kind of package: tube Turn-on time: 109ns Turn-off time: 1.59µs |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXGX82N120B3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 500A Mounting: THT Gate charge: 0.35µC Kind of package: tube Turn-on time: 112ns Turn-off time: 760ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
LOC111S | IXYS |
Category: Optocouplers - othersDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1A Kind of output: transistor Mounting: SMD Type of optocoupler: optocoupler Number of channels: 1 Trigger current: 1A Insulation voltage: 3.75kV |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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| LCB111STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Kind of output: MOSFET Case: DIP6 Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NC Turn-off time: 5ms Turn-on time: 5ms Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA On-state resistance: 35Ω Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. |
| DSP45-18A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 45A; tube; Ifsm: 480A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 45A
Semiconductor structure: double
Kind of package: tube
Max. forward impulse current: 0.48kA
Case: TO247-3
Max. forward voltage: 1.26V
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 45A; tube; Ifsm: 480A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 45A
Semiconductor structure: double
Kind of package: tube
Max. forward impulse current: 0.48kA
Case: TO247-3
Max. forward voltage: 1.26V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXTH30N50L2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику
од. на суму грн.
| DSI30-12AS-TRL |
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Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK,TO263AB; Ufmax: 1.29V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 1.29V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK,TO263AB; Ufmax: 1.29V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 1.29V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| IXTA260N055T2 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Case: TO263
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Case: TO263
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IXTA260N055T2-7 |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Case: TO263-7
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Case: TO263-7
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IXTH260N055T2 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Case: TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Case: TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| PLA132S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
на замовлення 143 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 708.07 грн |
| 100+ | 501.62 грн |
| PAA132S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
товару немає в наявності
В кошику
од. на суму грн.
| PAA132STR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| PLA132STR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| MCC56-14io1B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2178.67 грн |
| 5+ | 1832.35 грн |
| DPG30C300PB |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.26V
Load current: 15A x2
Power dissipation: 90W
Max. forward impulse current: 0.24kA
Max. off-state voltage: 300V
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.26V
Load current: 15A x2
Power dissipation: 90W
Max. forward impulse current: 0.24kA
Max. off-state voltage: 300V
на замовлення 148 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 234.83 грн |
| 3+ | 164.99 грн |
| 10+ | 142.61 грн |
| DPG20C300PB |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A x2
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 300V
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A x2
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 300V
на замовлення 137 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 154.47 грн |
| 4+ | 131.00 грн |
| 10+ | 115.25 грн |
| 50+ | 105.30 грн |
| DSSK28-01AS-TRL |
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Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 15A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A
Semiconductor structure: common cathode
Capacitance: 334pF
Max. forward voltage: 0.82V
Leakage current: 0.5mA
Max. forward impulse current: 230A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 15A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A
Semiconductor structure: common cathode
Capacitance: 334pF
Max. forward voltage: 0.82V
Leakage current: 0.5mA
Max. forward impulse current: 230A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
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| IXGX55N120A3H1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; PT
Type of transistor: IGBT
Kind of package: tube
Turn-on time: 70ns
Gate charge: 185nC
Turn-off time: 1253ns
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 460W
Collector-emitter voltage: 1.2kV
Collector current: 55A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Case: PLUS247™
Mounting: THT
Technology: GenX3™; PT
Type of transistor: IGBT
Kind of package: tube
Turn-on time: 70ns
Gate charge: 185nC
Turn-off time: 1253ns
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Power dissipation: 460W
Collector-emitter voltage: 1.2kV
Collector current: 55A
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В кошику
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| OMA160S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
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| OMA160STR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CLA60MT1200NTZ |
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Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; D3PAK; Igt: 60/80mA; Ifsm: 325A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 325A
Case: D3PAK
Kind of package: tube
Mounting: SMD
Gate current: 60/80mA
Max. load current: 30A
Type of thyristor: triac
Category: Triacs
Description: Triac; 1.2kV; 30A; D3PAK; Igt: 60/80mA; Ifsm: 325A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 325A
Case: D3PAK
Kind of package: tube
Mounting: SMD
Gate current: 60/80mA
Max. load current: 30A
Type of thyristor: triac
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 648.24 грн |
| 3+ | 532.29 грн |
| 10+ | 478.40 грн |
| 30+ | 460.16 грн |
| IXTH1N450HV |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 46nC
Reverse recovery time: 1.75µs
Drain current: 1A
On-state resistance: 80Ω
Power dissipation: 520W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 46nC
Reverse recovery time: 1.75µs
Drain current: 1A
On-state resistance: 80Ω
Power dissipation: 520W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 3311.76 грн |
| 5+ | 2719.51 грн |
| IXTT02N450HV |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 120 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 2209.92 грн |
| 5+ | 1820.75 грн |
| 10+ | 1673.99 грн |
| 30+ | 1576.98 грн |
| IXTT1N450HV |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 46nC
Reverse recovery time: 1.75µs
Drain current: 1A
On-state resistance: 80Ω
Power dissipation: 520W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 46nC
Reverse recovery time: 1.75µs
Drain current: 1A
On-state resistance: 80Ω
Power dissipation: 520W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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| IXYX40N450HV |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 40A; 660W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 170nC
Turn-on time: 786ns
Turn-off time: 1128ns
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 660W
Pulsed collector current: 350A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 40A; 660W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 170nC
Turn-on time: 786ns
Turn-off time: 1128ns
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 660W
Pulsed collector current: 350A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| IXTH02N450HV |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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| IXTX1R4N450HV |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Reverse recovery time: 660ns
Drain current: 1.4A
Pulsed drain current: 5A
Gate-source voltage: ±20V
On-state resistance: 40Ω
Power dissipation: 960W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Reverse recovery time: 660ns
Drain current: 1.4A
Pulsed drain current: 5A
Gate-source voltage: ±20V
On-state resistance: 40Ω
Power dissipation: 960W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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| IXKC23N60C5 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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| IXBT12N300HV |
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Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Case: TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 62nC
Turn-on time: 64ns
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 98A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Case: TO268
Mounting: SMD
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Gate charge: 62nC
Turn-on time: 64ns
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 98A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™
товару немає в наявності
Мінімальне замовлення: 300 шт
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| MCD56-16io8B |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. load current: 100A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. load current: 100A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
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| MCD56-16IO1B |
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Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. load current: 100A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. load current: 100A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
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| MCC56-16io8B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.6kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.6kA
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| CS20-16IO1 |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 31A
Load current: 20A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 260A
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 31A
Load current: 20A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 260A
на замовлення 151 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 518.77 грн |
| 5+ | 354.03 грн |
| 10+ | 326.67 грн |
| 20+ | 303.46 грн |
| 30+ | 291.85 грн |
| 120+ | 270.29 грн |
| CS30-12IO1 |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.4kA
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.2kV
Max. load current: 47A
Load current: 30A
Gate current: 55mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 0.4kA
на замовлення 224 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 421.45 грн |
| 10+ | 264.49 грн |
| CS30-16IO1 |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 55mA
Max. off-state voltage: 1.6kV
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 0.4kA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 55mA
Max. off-state voltage: 1.6kV
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 0.4kA
Type of thyristor: thyristor
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 525.92 грн |
| 10+ | 315.89 грн |
| 30+ | 310.09 грн |
| CS30-14IO1 |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 55mA
Max. off-state voltage: 1.4kV
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 0.4kA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 55mA
Max. off-state voltage: 1.4kV
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 0.4kA
Type of thyristor: thyristor
на замовлення 231 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 428.59 грн |
| 10+ | 345.74 грн |
| 30+ | 244.59 грн |
| 120+ | 239.62 грн |
| CS20-12IO1 |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 50mA
Max. off-state voltage: 1.2kV
Load current: 20A
Max. load current: 31A
Max. forward impulse current: 260A
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 50mA
Max. off-state voltage: 1.2kV
Load current: 20A
Max. load current: 31A
Max. forward impulse current: 260A
Type of thyristor: thyristor
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 460.74 грн |
| 3+ | 397.15 грн |
| 5+ | 375.59 грн |
| 10+ | 339.94 грн |
| 30+ | 282.73 грн |
| IXTH130N20T |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Type of transistor: N-MOSFET
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Pulsed drain current: 320A
Power dissipation: 830W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 150ns
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| DSA240X150NA |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Max. forward voltage: 0.85V
Load current: 120A x2
Max. off-state voltage: 150V
Max. forward impulse current: 1.6kA
Max. load current: 240A
Kind of package: tube
Semiconductor structure: double independent
Type of semiconductor module: diode
Case: SOT227B
Mechanical mounting: screw
Features of semiconductor devices: Schottky
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Max. forward voltage: 0.85V
Load current: 120A x2
Max. off-state voltage: 150V
Max. forward impulse current: 1.6kA
Max. load current: 240A
Kind of package: tube
Semiconductor structure: double independent
Type of semiconductor module: diode
Case: SOT227B
Mechanical mounting: screw
Features of semiconductor devices: Schottky
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| CPC3982TTR |
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Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Power dissipation: 0.4W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain current: 0.15A
Gate-source voltage: ±15V
On-state resistance: 380Ω
Drain-source voltage: 800V
Kind of channel: depletion
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Power dissipation: 0.4W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain current: 0.15A
Gate-source voltage: ±15V
On-state resistance: 380Ω
Drain-source voltage: 800V
Kind of channel: depletion
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 2200 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 32.14 грн |
| IXFN120N65X2 |
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Виробник: IXYS
Category: Transistor drivers
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 108A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 24mΩ
Kind of channel: enhancement
Pulsed drain current: 240A
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate charge: 240nC
Reverse recovery time: 220ns
Category: Transistor drivers
Description: Module; single transistor; 650V; 108A; SOT227B; screw; Idm: 240A
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 108A
Power dissipation: 890W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 24mΩ
Kind of channel: enhancement
Pulsed drain current: 240A
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate charge: 240nC
Reverse recovery time: 220ns
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| PLA193 |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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| PLA193E |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 233.05 грн |
| 50+ | 141.78 грн |
| 250+ | 113.59 грн |
| PLA193S |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 441.09 грн |
| 10+ | 334.14 грн |
| 50+ | 305.12 грн |
| PLA193STR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| IXFH24N90P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 24A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Case: TO247-3
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 660W
Gate charge: 130nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 24A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Case: TO247-3
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 660W
Gate charge: 130nC
на замовлення 226 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 819.68 грн |
| 30+ | 732.94 грн |
| IXFR24N90P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Case: ISOPLUS247™
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 230W
Gate charge: 130nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Case: ISOPLUS247™
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 230W
Gate charge: 130nC
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| DSI30-16A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: tube
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 195.54 грн |
| 10+ | 145.92 грн |
| 50+ | 102.81 грн |
| DSI30-16AS |
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Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: reel; tape
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| DSI30-16AS-TUB |
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Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: tube
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 1400 шт
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| DPG30C400PB |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO220AB; 90W
Mounting: THT
Case: TO220AB
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 45ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.39V
Max. forward impulse current: 190A
Load current: 15A x2
Power dissipation: 90W
Max. off-state voltage: 0.4kV
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO220AB; 90W
Mounting: THT
Case: TO220AB
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 45ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.39V
Max. forward impulse current: 190A
Load current: 15A x2
Power dissipation: 90W
Max. off-state voltage: 0.4kV
на замовлення 83 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 212.51 грн |
| 10+ | 174.94 грн |
| MD16110A-DKM2MM |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 110A; package A
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Case: package A
Electrical mounting: screw
Max. forward voltage: 1.6V
Load current: 110A
Max. load current: 170A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.5kA
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 110A; package A
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Case: package A
Electrical mounting: screw
Max. forward voltage: 1.6V
Load current: 110A
Max. load current: 170A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.5kA
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| DSA60C45HB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 160W
Load current: 30A x2
Max. forward voltage: 0.66V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 160W
Load current: 30A x2
Max. forward voltage: 0.66V
на замовлення 296 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 270.55 грн |
| 3+ | 226.35 грн |
| 10+ | 199.82 грн |
| 30+ | 183.24 грн |
| DSA60C60PB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.77V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.77V
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| DSA60C150PB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward impulse current: 390A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward impulse current: 390A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.8V
товару немає в наявності
Мінімальне замовлення: 8000 шт
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од. на суму грн.
| DSA60C100PB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.78V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.78V
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| DSA60C45PB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.67V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.67V
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| DSA60C60HB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 160W
Load current: 30A x2
Max. forward voltage: 0.75V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 160W
Load current: 30A x2
Max. forward voltage: 0.75V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| DSA30C45PC |
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Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape; 85W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.63V
Max. forward impulse current: 340A
Kind of package: reel; tape
Power dissipation: 85W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape; 85W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.63V
Max. forward impulse current: 340A
Kind of package: reel; tape
Power dissipation: 85W
на замовлення 687 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 39.29 грн |
| IXGX82N120A3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
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| IXGX82N120B3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 500A
Mounting: THT
Gate charge: 0.35µC
Kind of package: tube
Turn-on time: 112ns
Turn-off time: 760ns
товару немає в наявності
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| LOC111S |
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Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1A
Kind of output: transistor
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Trigger current: 1A
Insulation voltage: 3.75kV
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1A
Kind of output: transistor
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Trigger current: 1A
Insulation voltage: 3.75kV
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 251.80 грн |
| LCB111STR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Case: DIP6
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 35Ω
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Case: DIP6
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 35Ω
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
































