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IXFT20N100P IXFT20N100P IXYS IXF_20N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
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IXGA20N100-TRL IXYS Category: SMD IGBT transistors
Description: Transistor: IGBT; 1kV; 40A; 150W; TO263
Type of transistor: IGBT
Power dissipation: 150W
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Collector current: 40A
Collector-emitter voltage: 1kV
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IXFT320N10T2 IXFT320N10T2 IXYS IXFH(T)320N10T2.pdf IXFT320N10T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
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IXFX420N10T IXFX420N10T IXYS IXFK420N10T_IXFX420N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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MMIX1F420N10T IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 334A
Pulsed drain current: 1kA
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 670nC
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
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IXGK100N170 IXGK100N170 IXYS IXGK(X)100N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Case: TO264
Kind of package: tube
Turn-on time: 285ns
Gate charge: 425nC
Turn-off time: 720ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 600A
Power dissipation: 830W
Collector-emitter voltage: 1.7kV
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IXTT12N150 IXTT12N150 IXYS IXT_12N150.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268; 1.2us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 12A
Power dissipation: 890W
Case: TO268
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1.2µs
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
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IXTT12N150HV IXTT12N150HV IXYS IXTT12N150HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268HV; 1.2us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 12A
Power dissipation: 890W
Case: TO268HV
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.2µs
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MCC161-20io1 IXYS PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2kV; 165A; Y4-M6; Ufmax: 1.36V
Case: Y4-M6
Kind of package: bulk
Electrical mounting: screw
Semiconductor structure: double series
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 165A
Max. off-state voltage: 2kV
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MCC161-22IO1 IXYS MCC161-22IO1.pdf PCN241015_Y4-M6 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 165A; Y4-M6; Ufmax: 1.36V
Case: Y4-M6
Kind of package: bulk
Electrical mounting: screw
Semiconductor structure: double series
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 165A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 6.48kA
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DSS10-01AS-TRL IXYS DSS10-01AS_2021.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 10A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Kind of package: reel; tape
Leakage current: 0.3mA
Capacitance: 223pF
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DSS10-01AS-TUB IXYS DSS10-01A.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. load current: 35A
Max. forward impulse current: 120A
Kind of package: tube
Power dissipation: 90W
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DSEC30-12A DSEC30-12A IXYS media?resourcetype=datasheets&itemid=449d027a-83b1-47f6-b255-dd89c85a9bad&filename=Littelfuse-Power-Semiconductors-DSEC30-12A-Datasheet description Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15Ax2; tube; Ifsm: 90A; TO247-3; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-3
Max. forward voltage: 2.61V
Power dissipation: 95W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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IXTA80N12T2 IXTA80N12T2 IXYS IXTA(P)80N12T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO263
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
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IXFR40N90P IXFR40N90P IXYS IXFR40N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 21A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
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UGE3126AY4 UGE3126AY4 IXYS UGE3126AY4.pdf Category: Diodes - others
Description: Diode: rectifying; 24kV; 0.8/1.4/2A; 5A; 1.6kW; Ø55x23mm; Ifsm: 70A
Type of diode: rectifying
Max. off-state voltage: 24kV
Load current: 0.8/1.4/2A
Max. load current: 5A
Power dissipation: 1.6kW
Body dimensions: Ø55x23mm
Mounting: screw type
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Max. forward impulse current: 70A
Max. forward voltage: 18V
Kind of package: bulk
Fastening thread: M8
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CLA30E1200PB CLA30E1200PB IXYS CLA30E1200PB.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO220AB; THT; tube
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
Load current: 30A
Max. forward impulse current: 255A
Max. off-state voltage: 1.2kV
Case: TO220AB
на замовлення 176 шт:
термін постачання 14-30 дні (днів)
2+303.57 грн
5+233.64 грн
10+209.93 грн
25+178.61 грн
50+157.45 грн
100+154.07 грн
Мінімальне замовлення: 2
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CLA30MT1200NPB CLA30MT1200NPB IXYS CLA30MT1200NPB.pdf Category: Triacs
Description: Triac; 1.2kV; 15A; TO220AB; Igt: 40/60mA; Ifsm: 145A
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 40/60mA
Max. load current: 15A
Max. forward impulse current: 0.145kA
Max. off-state voltage: 1.2kV
Case: TO220AB
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
2+343.68 грн
Мінімальне замовлення: 2
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CLA30MT1200NPZ-TUB CLA30MT1200NPZ-TUB IXYS CLA30MT1200NPZ.pdf Category: Triacs
Description: Triac; 1.2kV; 15A; TO263ABHV; Igt: 40/60mA; Ifsm: 145A
Mounting: SMD
Kind of package: tube
Type of thyristor: triac
Gate current: 40/60mA
Max. load current: 15A
Max. forward impulse current: 0.145kA
Max. off-state voltage: 1.2kV
Case: TO263ABHV
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
2+443.05 грн
3+369.93 грн
10+326.75 грн
Мінімальне замовлення: 2
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CLA30E1200NPZ-TRL IXYS Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
Load current: 30A
Max. off-state voltage: 1.2kV
Case: D2PAK
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CLA30E1200NPZ-TUB CLA30E1200NPZ-TUB IXYS CLA30E1200NPZ.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Kind of package: tube
Type of thyristor: thyristor
Features of semiconductor devices: two gate polarities
Gate current: 30/50mA
Max. load current: 47A
Load current: 30A
Max. forward impulse current: 255A
Max. off-state voltage: 1.2kV
Case: TO263ABHV
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VUO122-12NO7 VUO122-12NO7 IXYS VUO122-12NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 125A; Ifsm: 1kA
Case: ECO-PAC 2
Leads: wire Ø 1.5mm
Version: module
Mechanical mounting: screw
Type of bridge rectifier: three-phase
Electrical mounting: THT
Max. forward voltage: 1.13V
Load current: 125A
Max. forward impulse current: 1kA
Max. off-state voltage: 1.2kV
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
1+2789.58 грн
3+2331.29 грн
10+2064.64 грн
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MIXA225PF1200TSF IXYS MIXA225PF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
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IXFN60N80P IXFN60N80P IXYS IXFN60N80P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Gate charge: 250nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
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IXFB60N80P IXFB60N80P IXYS IXFB60N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
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IXFL60N80P IXFL60N80P IXYS IXFL60N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 40A
Power dissipation: 625W
Case: ISOPLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
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IX526119 IXYS Category: IGBT modules
Description: Transistor: IGBT; SMPD-B
Type of transistor: IGBT
Case: SMPD-B
Mounting: SMD
Kind of package: reel; tape
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VVZB135-16IOXT IXYS VVZB135-16IOXT.pdf Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Technology: X2PT
Mechanical mounting: screw
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IXFK40N90P IXFK40N90P IXYS IXFK(X)40N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
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IXTH60N20L2 IXTH60N20L2 IXYS IXTH(T,Q)60N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
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IXTH110N10L2 IXTH110N10L2 IXYS IXTH(T)110N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 230ns
Features of semiconductor devices: linear power mosfet
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LF21904NTR LF21904NTR IXYS LF21904NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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LF2103NTR LF2103NTR IXYS LF2103NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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LF21064NTR LF21064NTR IXYS LF21064NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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IXFN200N10P IXFN200N10P IXYS IXFN200N10P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: 400A
Power dissipation: 680W
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 235nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXXK300N60B3 IXXK300N60B3 IXYS IXXK(X)300N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Case: TO264
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Turn-on time: 137ns
Turn-off time: 430ns
Gate charge: 460nC
Gate-emitter voltage: ±20V
Collector current: 300A
Collector-emitter voltage: 600V
Pulsed collector current: 1.14kA
Power dissipation: 2.3kW
Kind of package: tube
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IXFH180N20X3 IXFH180N20X3 IXYS IXF_180N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 94ns
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
1+1163.24 грн
2+1018.35 грн
5+887.99 грн
10+836.35 грн
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DCK30C1200HB IXYS DCK30C1200HB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 44A; TO247-3; Ir: 2uA
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 2µA
Max. forward voltage: 1.7V
Load current: 44A
Max. forward impulse current: 120A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
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DCG45X1200NA DCG45X1200NA IXYS DCG45X1200NA.pdf Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 22Ax2; SOT227B; screw
Case: SOT227B
Kind of package: tube
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Technology: SiC
Max. forward voltage: 2.2V
Load current: 22A x2
Max. load current: 44A
Max. off-state voltage: 1.2kV
Semiconductor structure: double independent
Type of semiconductor module: diode
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IXTP12N70X2 IXTP12N70X2 IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain current: 12A
Drain-source voltage: 700V
Gate charge: 19nC
On-state resistance: 0.3Ω
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 180W
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
2+303.57 грн
3+253.11 грн
Мінімальне замовлення: 2
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IXTP120N04T2 IXTP120N04T2 IXYS IXTA(P)120N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain current: 120A
Drain-source voltage: 40V
Gate charge: 58nC
Reverse recovery time: 35ns
On-state resistance: 6.1mΩ
Power dissipation: 200W
Kind of channel: enhancement
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IXTP120N075T2 IXTP120N075T2 IXYS IXTA(P)120N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain current: 120A
Drain-source voltage: 75V
Gate charge: 78nC
Reverse recovery time: 50ns
On-state resistance: 7.7mΩ
Power dissipation: 250W
Kind of channel: enhancement
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IXTP12N70X2M IXTP12N70X2M IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
Drain current: 12A
Drain-source voltage: 700V
Gate charge: 19nC
On-state resistance: 0.3Ω
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 40W
Kind of channel: enhancement
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IXGF25N250 IXYS littelfuse_discrete_igbts_npt_ixgf25n250_datasheet.pdf.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 2.5kV; 30A; 114W; i4-pac
Type of transistor: IGBT
Collector-emitter voltage: 2.5kV
Collector current: 30A
Power dissipation: 114W
Case: i4-pac
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
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IXCP10M90S IXCP10M90S IXYS IXCP10M90S.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
на замовлення 175 шт:
термін постачання 14-30 дні (днів)
2+290.81 грн
10+208.24 грн
Мінімальне замовлення: 2
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IXCY10M90S IXCY10M90S IXYS IXCP10M90S.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
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IXCY10M90S-TRL IXYS littelfuse-power-semi-ixcp10m90s-ixcy10m90s?assetguid=c96aeca6-1b81-4b5d-af9f-6cbd5216c35e Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
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IXGN320N60A3 IXGN320N60A3 IXYS IXGN320N60A3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 170A
Pulsed collector current: 1.2kA
Power dissipation: 735W
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
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IXGN100N170 IXGN100N170 IXYS IXGN100N170.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Features of semiconductor devices: high voltage
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 95A
Pulsed collector current: 600A
Power dissipation: 735W
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
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IXGN400N60A3 IXGN400N60A3 IXYS IXGN400N60A3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 190A
Pulsed collector current: 800A
Power dissipation: 830W
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
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IXGN400N60B3 IXGN400N60B3 IXYS IXGN400N60B3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.5kA
Power dissipation: 1kW
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
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IXGN200N170 IXGN200N170 IXYS IXGN200N170.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1.05kA
Power dissipation: 1.25kW
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
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IXGN82N120C3H1 IXYS Category: IGBT modules
Description: Module: IGBT; Ic: 130A; SOT227B; tube
Case: SOT227B
Kind of package: tube
Type of semiconductor module: IGBT
Collector current: 130A
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IXTP140P05T IXTP140P05T IXYS IXT_140P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -50V
Drain current: -140A
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Gate-source voltage: ±15V
на замовлення 211 шт:
термін постачання 14-30 дні (днів)
1+546.98 грн
5+430.03 грн
50+369.08 грн
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IXTH140P05T IXTH140P05T IXYS IXT_140P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -50V
Drain current: -140A
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Gate-source voltage: ±15V
на замовлення 56 шт:
термін постачання 14-30 дні (днів)
1+686.46 грн
3+584.09 грн
10+489.28 грн
30+473.20 грн
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IXTH140P10T IXTH140P10T IXYS IXT_140P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 568W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -100V
Drain current: -140A
Reverse recovery time: 130ns
Gate charge: 400nC
On-state resistance: 10mΩ
Gate-source voltage: ±15V
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+1239.81 грн
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PAA140P PAA140P IXYS PAA140.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 1ms
Turn-on time: 3ms
On-state resistance: 8Ω
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 250mA
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Case: DIP8
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PAA140PTR IXYS PAA140.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 1ms
Turn-on time: 3ms
On-state resistance: 8Ω
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 250mA
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Case: DIP8
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MCMA140PD1600TB MCMA140PD1600TB IXYS MCMA140PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Load current: 140A
Gate current: 150/200mA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.4kA
Threshold on-voltage: 0.85V
Max. off-state voltage: 1.6kV
Max. load current: 220A
Kind of package: bulk
Case: TO240AA
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IXTA140P05T IXTA140P05T IXYS IXT_140P05T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain current: -140A
Drain-source voltage: -50V
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
Kind of package: tube
Case: TO263
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IXFT20N100P IXF_20N100P.pdf
IXFT20N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: SMD
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
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IXGA20N100-TRL
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 1kV; 40A; 150W; TO263
Type of transistor: IGBT
Power dissipation: 150W
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Collector current: 40A
Collector-emitter voltage: 1kV
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IXFT320N10T2 IXFH(T)320N10T2.pdf IXFT320N10T2.pdf
IXFT320N10T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 320A; 1000W; TO268; 98ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 320A
Power dissipation: 1kW
Case: TO268
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 430nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 98ns
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IXFX420N10T IXFK420N10T_IXFX420N10T.pdf
IXFX420N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 420A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: PLUS247™
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
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MMIX1F420N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 334A; Idm: 1kA; 680W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 334A
Pulsed drain current: 1kA
Power dissipation: 680W
Case: SMPD
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 670nC
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
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IXGK100N170 IXGK(X)100N170.pdf
IXGK100N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 100A; 830W; TO264
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Technology: NPT
Case: TO264
Kind of package: tube
Turn-on time: 285ns
Gate charge: 425nC
Turn-off time: 720ns
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 600A
Power dissipation: 830W
Collector-emitter voltage: 1.7kV
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IXTT12N150 IXT_12N150.pdf
IXTT12N150
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268; 1.2us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 12A
Power dissipation: 890W
Case: TO268
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1.2µs
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
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IXTT12N150HV IXTT12N150HV.pdf
IXTT12N150HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 12A; 890W; TO268HV; 1.2us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 12A
Power dissipation: 890W
Case: TO268HV
Mounting: SMD
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.2µs
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MCC161-20io1 PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2kV; 165A; Y4-M6; Ufmax: 1.36V
Case: Y4-M6
Kind of package: bulk
Electrical mounting: screw
Semiconductor structure: double series
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 165A
Max. off-state voltage: 2kV
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MCC161-22IO1 MCC161-22IO1.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 2.2kV; 165A; Y4-M6; Ufmax: 1.36V
Case: Y4-M6
Kind of package: bulk
Electrical mounting: screw
Semiconductor structure: double series
Mechanical mounting: screw
Type of semiconductor module: thyristor
Gate current: 150/200mA
Max. forward voltage: 1.36V
Load current: 165A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 6.48kA
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DSS10-01AS-TRL DSS10-01AS_2021.pdf
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 10A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.84V
Kind of package: reel; tape
Leakage current: 0.3mA
Capacitance: 223pF
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DSS10-01AS-TUB DSS10-01A.pdf
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10A; tube; 90W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 0.66V
Max. load current: 35A
Max. forward impulse current: 120A
Kind of package: tube
Power dissipation: 90W
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DSEC30-12A description media?resourcetype=datasheets&itemid=449d027a-83b1-47f6-b255-dd89c85a9bad&filename=Littelfuse-Power-Semiconductors-DSEC30-12A-Datasheet
DSEC30-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 15Ax2; tube; Ifsm: 90A; TO247-3; 95W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 90A
Case: TO247-3
Max. forward voltage: 2.61V
Power dissipation: 95W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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IXTA80N12T2 IXTA(P)80N12T2.pdf
IXTA80N12T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 80A; 325W; TO263; 90ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 80A
Power dissipation: 325W
Case: TO263
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 90ns
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IXFR40N90P IXFR40N90P.pdf
IXFR40N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 21A
Power dissipation: 300W
Case: ISOPLUS247™
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
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UGE3126AY4 UGE3126AY4.pdf
UGE3126AY4
Виробник: IXYS
Category: Diodes - others
Description: Diode: rectifying; 24kV; 0.8/1.4/2A; 5A; 1.6kW; Ø55x23mm; Ifsm: 70A
Type of diode: rectifying
Max. off-state voltage: 24kV
Load current: 0.8/1.4/2A
Max. load current: 5A
Power dissipation: 1.6kW
Body dimensions: Ø55x23mm
Mounting: screw type
Semiconductor structure: single diode
Features of semiconductor devices: high voltage
Max. forward impulse current: 70A
Max. forward voltage: 18V
Kind of package: bulk
Fastening thread: M8
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CLA30E1200PB CLA30E1200PB.pdf
CLA30E1200PB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO220AB; THT; tube
Mounting: THT
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
Load current: 30A
Max. forward impulse current: 255A
Max. off-state voltage: 1.2kV
Case: TO220AB
на замовлення 176 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+303.57 грн
5+233.64 грн
10+209.93 грн
25+178.61 грн
50+157.45 грн
100+154.07 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA30MT1200NPB CLA30MT1200NPB.pdf
CLA30MT1200NPB
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 15A; TO220AB; Igt: 40/60mA; Ifsm: 145A
Mounting: THT
Kind of package: tube
Type of thyristor: triac
Gate current: 40/60mA
Max. load current: 15A
Max. forward impulse current: 0.145kA
Max. off-state voltage: 1.2kV
Case: TO220AB
на замовлення 38 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+343.68 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA30MT1200NPZ-TUB CLA30MT1200NPZ.pdf
CLA30MT1200NPZ-TUB
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 15A; TO263ABHV; Igt: 40/60mA; Ifsm: 145A
Mounting: SMD
Kind of package: tube
Type of thyristor: triac
Gate current: 40/60mA
Max. load current: 15A
Max. forward impulse current: 0.145kA
Max. off-state voltage: 1.2kV
Case: TO263ABHV
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+443.05 грн
3+369.93 грн
10+326.75 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CLA30E1200NPZ-TRL
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; D2PAK; SMD; reel,tape
Mounting: SMD
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
Load current: 30A
Max. off-state voltage: 1.2kV
Case: D2PAK
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CLA30E1200NPZ-TUB CLA30E1200NPZ.pdf
CLA30E1200NPZ-TUB
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; TO263ABHV; SMD; tube
Mounting: SMD
Kind of package: tube
Type of thyristor: thyristor
Features of semiconductor devices: two gate polarities
Gate current: 30/50mA
Max. load current: 47A
Load current: 30A
Max. forward impulse current: 255A
Max. off-state voltage: 1.2kV
Case: TO263ABHV
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VUO122-12NO7 VUO122-12NO7.pdf
VUO122-12NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.2kV; If: 125A; Ifsm: 1kA
Case: ECO-PAC 2
Leads: wire Ø 1.5mm
Version: module
Mechanical mounting: screw
Type of bridge rectifier: three-phase
Electrical mounting: THT
Max. forward voltage: 1.13V
Load current: 125A
Max. forward impulse current: 1kA
Max. off-state voltage: 1.2kV
на замовлення 21 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2789.58 грн
3+2331.29 грн
10+2064.64 грн
В кошику  од. на суму  грн.
MIXA225PF1200TSF MIXA225PF1200TSF.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 250A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
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IXFN60N80P description IXFN60N80P.pdf
IXFN60N80P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 53A; SOT227B; screw; Idm: 150A
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 1.04kW
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Gate charge: 250nC
Kind of channel: enhancement
Reverse recovery time: 250ns
Electrical mounting: screw
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Technology: HiPerFET™; Polar™
Mechanical mounting: screw
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IXFB60N80P IXFB60N80P.pdf
IXFB60N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
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IXFL60N80P IXFL60N80P.pdf
IXFL60N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 40A
Power dissipation: 625W
Case: ISOPLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
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IX526119
Виробник: IXYS
Category: IGBT modules
Description: Transistor: IGBT; SMPD-B
Type of transistor: IGBT
Case: SMPD-B
Mounting: SMD
Kind of package: reel; tape
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VVZB135-16IOXT VVZB135-16IOXT.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 84A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Power dissipation: 390W
Technology: X2PT
Mechanical mounting: screw
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IXFK40N90P IXFK(X)40N90P.pdf
IXFK40N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 40A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 40A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhancement
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IXTH60N20L2 IXTH(T,Q)60N20L2.pdf
IXTH60N20L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 540W; TO247-3; 330ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 60A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 255nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 330ns
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IXTH110N10L2 IXTH(T)110N10L2.pdf
IXTH110N10L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 600W; TO247-3; 230ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 230ns
Features of semiconductor devices: linear power mosfet
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LF21904NTR LF21904NTR.pdf
LF21904NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; -4.5÷4.5A
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -4.5...4.5A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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LF2103NTR LF2103NTR.pdf
LF2103NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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LF21064NTR LF21064NTR.pdf
LF21064NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO14; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; high-/low-side
Case: SO14
Output current: -600...290mA
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Supply voltage: 10...20V
Voltage class: 600V
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
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IXFN200N10P description IXFN200N10P.pdf
IXFN200N10P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 200A; SOT227B; screw; Idm: 400A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 200A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 7.5mΩ
Pulsed drain current: 400A
Power dissipation: 680W
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Gate charge: 235nC
Reverse recovery time: 150ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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IXXK300N60B3 IXXK(X)300N60B3.pdf
IXXK300N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; TO264
Mounting: THT
Case: TO264
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Turn-on time: 137ns
Turn-off time: 430ns
Gate charge: 460nC
Gate-emitter voltage: ±20V
Collector current: 300A
Collector-emitter voltage: 600V
Pulsed collector current: 1.14kA
Power dissipation: 2.3kW
Kind of package: tube
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IXFH180N20X3 IXF_180N20X3_HV.pdf 200VProductBrief.pdf
IXFH180N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 180A; 780W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 180A
Power dissipation: 780W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 154nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 94ns
на замовлення 10 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1163.24 грн
2+1018.35 грн
5+887.99 грн
10+836.35 грн
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DCK30C1200HB DCK30C1200HB.pdf
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 44A; TO247-3; Ir: 2uA
Mounting: THT
Case: TO247-3
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 2µA
Max. forward voltage: 1.7V
Load current: 44A
Max. forward impulse current: 120A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
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DCG45X1200NA DCG45X1200NA.pdf
DCG45X1200NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 1.2kV; If: 22Ax2; SOT227B; screw
Case: SOT227B
Kind of package: tube
Features of semiconductor devices: Schottky
Electrical mounting: screw
Mechanical mounting: screw
Technology: SiC
Max. forward voltage: 2.2V
Load current: 22A x2
Max. load current: 44A
Max. off-state voltage: 1.2kV
Semiconductor structure: double independent
Type of semiconductor module: diode
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IXTP12N70X2 ixty2n65x2.pdf
IXTP12N70X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 180W; TO220AB
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain current: 12A
Drain-source voltage: 700V
Gate charge: 19nC
On-state resistance: 0.3Ω
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 180W
Kind of channel: enhancement
на замовлення 9 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+303.57 грн
3+253.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP120N04T2 IXTA(P)120N04T2.pdf
IXTP120N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain current: 120A
Drain-source voltage: 40V
Gate charge: 58nC
Reverse recovery time: 35ns
On-state resistance: 6.1mΩ
Power dissipation: 200W
Kind of channel: enhancement
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IXTP120N075T2 IXTA(P)120N075T2.pdf
IXTP120N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Mounting: THT
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Drain current: 120A
Drain-source voltage: 75V
Gate charge: 78nC
Reverse recovery time: 50ns
On-state resistance: 7.7mΩ
Power dissipation: 250W
Kind of channel: enhancement
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IXTP12N70X2M ixty2n65x2.pdf
IXTP12N70X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
Drain current: 12A
Drain-source voltage: 700V
Gate charge: 19nC
On-state resistance: 0.3Ω
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 40W
Kind of channel: enhancement
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IXGF25N250 littelfuse_discrete_igbts_npt_ixgf25n250_datasheet.pdf.pdf
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 2.5kV; 30A; 114W; i4-pac
Type of transistor: IGBT
Collector-emitter voltage: 2.5kV
Collector current: 30A
Power dissipation: 114W
Case: i4-pac
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
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IXCP10M90S IXCP10M90S.pdf
IXCP10M90S
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
на замовлення 175 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+290.81 грн
10+208.24 грн
Мінімальне замовлення: 2
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IXCY10M90S IXCP10M90S.pdf
IXCY10M90S
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
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IXCY10M90S-TRL littelfuse-power-semi-ixcp10m90s-ixcy10m90s?assetguid=c96aeca6-1b81-4b5d-af9f-6cbd5216c35e
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
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IXGN320N60A3 IXGN320N60A3.pdf
IXGN320N60A3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 170A
Pulsed collector current: 1.2kA
Power dissipation: 735W
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
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IXGN100N170 IXGN100N170.pdf
IXGN100N170
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Features of semiconductor devices: high voltage
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 95A
Pulsed collector current: 600A
Power dissipation: 735W
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
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IXGN400N60A3 IXGN400N60A3.pdf
IXGN400N60A3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 190A
Pulsed collector current: 800A
Power dissipation: 830W
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
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IXGN400N60B3 IXGN400N60B3.pdf
IXGN400N60B3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.5kA
Power dissipation: 1kW
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
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IXGN200N170 IXGN200N170.pdf
IXGN200N170
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1.05kA
Power dissipation: 1.25kW
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
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IXGN82N120C3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; Ic: 130A; SOT227B; tube
Case: SOT227B
Kind of package: tube
Type of semiconductor module: IGBT
Collector current: 130A
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IXTP140P05T IXT_140P05T.pdf
IXTP140P05T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -50V
Drain current: -140A
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Gate-source voltage: ±15V
на замовлення 211 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+546.98 грн
5+430.03 грн
50+369.08 грн
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IXTH140P05T IXT_140P05T.pdf
IXTH140P05T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -50V
Drain current: -140A
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Gate-source voltage: ±15V
на замовлення 56 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+686.46 грн
3+584.09 грн
10+489.28 грн
30+473.20 грн
В кошику  од. на суму  грн.
IXTH140P10T IXT_140P10T.pdf
IXTH140P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 568W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -100V
Drain current: -140A
Reverse recovery time: 130ns
Gate charge: 400nC
On-state resistance: 10mΩ
Gate-source voltage: ±15V
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1239.81 грн
В кошику  од. на суму  грн.
PAA140P PAA140.pdf
PAA140P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 1ms
Turn-on time: 3ms
On-state resistance: 8Ω
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 250mA
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Case: DIP8
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PAA140PTR PAA140.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 1ms
Turn-on time: 3ms
On-state resistance: 8Ω
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 250mA
Relay variant: 1-phase; current source
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Case: DIP8
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MCMA140PD1600TB MCMA140PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCMA140PD1600TB
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Load current: 140A
Gate current: 150/200mA
Max. forward voltage: 1.28V
Max. forward impulse current: 2.4kA
Threshold on-voltage: 0.85V
Max. off-state voltage: 1.6kV
Max. load current: 220A
Kind of package: bulk
Case: TO240AA
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IXTA140P05T IXT_140P05T.pdf
IXTA140P05T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain current: -140A
Drain-source voltage: -50V
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
Kind of package: tube
Case: TO263
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