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MDNA600P2200PTSF IXYS Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-Fit
Load current: 600A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 15kA
Kind of package: bulk
Semiconductor structure: double series
Type of semiconductor module: diode
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MIXA300PF1200TSF IXYS MIXA300PF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 325A
Pulsed collector current: 650A
Power dissipation: 1.5kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
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MIXA450PF1200TSF IXYS MIXA450PF1200TSF.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.1kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
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MIXG330PF1200TSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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MIXG490PF1200TSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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MIXG330PF1200PTSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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MIXG490PF1200PTSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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VBE55-06NO7 VBE55-06NO7 IXYS VBE55-06NO7.pdf Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 68A; Ifsm: 215A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 68A
Max. forward impulse current: 215A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
1+1275.06 грн
3+1125.94 грн
5+1074.54 грн
10+997.43 грн
В кошику  од. на суму  грн.
DPG120C300QB DPG120C300QB IXYS Littelfuse-Power-Semiconductors-DPG120C300QB-Datasheet?assetguid=A5371395-F911-4F4E-8C71-3DC160C40938 Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 60Ax2; tube; Ifsm: 450A; TO3P; 275W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 60A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO3P
Max. forward voltage: 1.4V
Power dissipation: 275W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
1+625.92 грн
3+515.71 грн
5+480.89 грн
В кошику  од. на суму  грн.
IXGL75N250 IXYS DS99861B(IXGL75N250).pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 110A; 430W; ISOPLUS264™
Type of transistor: IGBT
Power dissipation: 430W
Case: ISOPLUS264™
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 580A
Collector-emitter voltage: 2.5kV
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXYH30N450HV IXYH30N450HV IXYS IXYH(t)30N450HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
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IXYT30N450HV IXYT30N450HV IXYS IXYH(t)30N450HV.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1542ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXFH96N20P IXFH96N20P IXYS IXFH(T,V)96N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 145nC
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
1+641.10 грн
5+519.03 грн
10+474.26 грн
20+435.29 грн
В кошику  од. на суму  грн.
IXTP48N20T IXTP48N20T IXYS IXTA(P,Q)48N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Reverse recovery time: 130ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 299 шт:
термін постачання 14-30 дні (днів)
2+328.59 грн
3+267.81 грн
10+213.91 грн
50+164.99 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFX230N20T IXFX230N20T IXYS IXFK(X)230N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1.67kW
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 358nC
Features of semiconductor devices: thrench gate power mosfet
на замовлення 108 шт:
термін постачання 14-30 дні (днів)
1+1660.79 грн
3+1426.09 грн
5+1340.69 грн
10+1204.71 грн
30+1184.81 грн
В кошику  од. на суму  грн.
MEK600-04DA IXYS PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 600A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Load current: 600A
Max. forward impulse current: 3kA
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ZY180RM IXYS Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
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 Мінімальне замовлення: 500 шт
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ZY180R480 IXYS Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
товару немає в наявності
 Мінімальне замовлення: 250 шт
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ZY180R350 IXYS Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
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 Мінімальне замовлення: 250 шт
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ZY180L350 IXYS Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
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 Мінімальне замовлення: 250 шт
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ZY180L480 IXYS lfsisa001004037012273451.PDF Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
товару немає в наявності
 Мінімальне замовлення: 250 шт
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PLA191S PLA191S IXYS PLA191.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 199 шт:
термін постачання 14-30 дні (днів)
1+656.28 грн
100+465.97 грн
В кошику  од. на суму  грн.
PLA191STR IXYS PLA191.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXTP14N60PM IXTP14N60PM IXYS IXTP14N60PM.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXTK150N15P IXTK150N15P IXYS IXTK150N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTL2N450 IXYS IXTL2N450.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
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IXTL2N470 IXYS IXTL2N470.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.7kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.7kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
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DSP25-16AR DSP25-16AR IXYS Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet?assetguid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; tube; Ifsm: 300A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 28A x2
Case: ISOPLUS247™
Max. forward voltage: 1.23V
Max. forward impulse current: 0.3kA
Kind of package: tube
Semiconductor structure: double series
Power dissipation: 100W
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
1+643.78 грн
10+519.03 грн
В кошику  од. на суму  грн.
DSP25-16A DSP25-16A IXYS Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet?assetguid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 25A
Case: TO247-3
Max. forward voltage: 1.23V
Max. forward impulse current: 0.3kA
Kind of package: tube
Semiconductor structure: double series
Power dissipation: 160W
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DSP25-16AT-TUB DSP25-16AT-TUB IXYS DSP25-16AT.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 25A
Case: D3PAK
Max. forward voltage: 1.16V
Max. forward impulse current: 0.3kA
Semiconductor structure: double series
Power dissipation: 160W
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DSP25-16AT-TRL IXYS media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V
Mounting: SMD
Case: D3PAK; TO268AA
Kind of package: reel; tape
Max. forward impulse current: 325A
Max. forward voltage: 1.23V
Max. off-state voltage: 1.6kV
Load current: 25A
Type of diode: rectifying
товару немає в наявності
 Мінімальне замовлення: 400 шт
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IXBH12N300 IXBH12N300 IXYS IXBH12N300_IXBT12N300.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 62nC
Turn-on time: 460ns
Turn-off time: 705ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™; FRED
товару немає в наявності
 Мінімальне замовлення: 300 шт
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LF2101NTR LF2101NTR IXYS LF2101NTR.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Mounting: SMD
Type of integrated circuit: driver
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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LAA108S LAA108S IXYS LAA108.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
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LAA108STR IXYS LAA108.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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MKI75-06A7T IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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MWI75-06A7T IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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MKI75-06A7 IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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MWI30-06A7 IXYS MWI30-06A7_MWI30-06A7T.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 30A
Power dissipation: 140W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Application: motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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IXTA34N65X2 IXTA34N65X2 IXYS IXTA34N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Power dissipation: 540W
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
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IXTP01N100D IXTP01N100D IXYS IXTP(Y)01N100D.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
на замовлення 286 шт:
термін постачання 14-30 дні (днів)
1+597.35 грн
10+504.10 грн
50+326.67 грн
В кошику  од. на суму  грн.
IXTH1N300P3HV IXTH1N300P3HV IXYS IXTH(T)1N300P3HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us
Case: TO247HV
Mounting: THT
On-state resistance: 50Ω
Power dissipation: 195W
Drain-source voltage: 3kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.8µs
Drain current: 1A
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IXTT1N300P3HV IXTT1N300P3HV IXYS IXTH(T)1N300P3HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO268HV; 1.8us
Case: TO268HV
Mounting: SMD
On-state resistance: 50Ω
Power dissipation: 195W
Drain-source voltage: 3kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.8µs
Drain current: 1A
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IXFN102N30P IXFN102N30P IXYS IXFN102N30P.pdf Category: Transistor drivers
Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: HiPerFET™; Polar™
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Polarisation: unipolar
Gate charge: 224nC
Reverse recovery time: 200ns
On-state resistance: 33mΩ
Gate-source voltage: ±30V
Drain current: 86A
Drain-source voltage: 300V
Pulsed drain current: 250A
Power dissipation: 570W
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IXFP102N15T IXFP102N15T IXYS IXFP102N15T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 87nC
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
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IXTK102N30P IXTK102N30P IXYS IXTK102N30P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 102A; 700W; TO264
Kind of channel: enhancement
Mounting: THT
Technology: PolarHT™
Case: TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 224nC
Reverse recovery time: 250ns
On-state resistance: 33mΩ
Gate-source voltage: ±20V
Drain current: 102A
Drain-source voltage: 300V
Power dissipation: 700W
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IXTP102N15T IXTP102N15T IXYS IXTA(H,P,Q)102N15T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 87nC
Reverse recovery time: 97ns
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTR102N65X2 IXTR102N65X2 IXYS IXTR102N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Kind of channel: enhancement
Mounting: THT
Case: ISOPLUS247™
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 450ns
On-state resistance: 33mΩ
Drain current: 54A
Drain-source voltage: 650V
Power dissipation: 330W
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В кошику  од. на суму  грн.
IXFT60N50P3 IXFT60N50P3 IXYS IXF_60N50P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
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IXYH120N65B3 IXYS media?resourcetype=datasheets&itemid=b04b9238-26f1-467e-981d-839cb4ffab3d&filename=littelfuse_discrete_igbts_xpt_ixyh120n65b3_datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 1.36kW; TO247-3
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 760A
Power dissipation: 1.36kW
Collector-emitter voltage: 650V
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 250nC
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH12N250C IXYS DS100791(IXYH12N250C)_.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Collector current: 12A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Technology: XPT™
Power dissipation: 310W
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Turn-on time: 12ns
Gate charge: 56nC
Turn-off time: 167ns
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IXYH120N65A5 IXYS IXYH120N65A5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 830W; TO247-3
Collector current: 120A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 790A
Power dissipation: 830W
Collector-emitter voltage: 650V
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH12N250CHV IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 28A; TO247AD
Collector current: 28A
Case: TO247AD
Collector-emitter voltage: 2.5kV
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH12N250CV1HV IXYH12N250CV1HV IXYS IXYH12N250CV1HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Collector current: 12A
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Technology: XPT™
Power dissipation: 310W
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Turn-on time: 32ns
Gate charge: 56nC
Turn-off time: 333ns
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LAA108PTR IXYS LAA108.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
DSP45-18A IXYS Littelfuse-Power-Semiconductors-DSP45-18A-Datasheet?assetguid=91090e86-fca9-4436-8c3a-e9be97a70b50 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 45A; tube; Ifsm: 480A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 45A
Semiconductor structure: double
Kind of package: tube
Max. forward impulse current: 0.48kA
Case: TO247-3
Max. forward voltage: 1.26V
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTH30N50L2 IXTH30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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DSI30-12AS-TRL DSI30-12AS-TRL IXYS Littelfuse-Power-Semiconductors-DSI30-12AS-Datasheet?assetguid=af403ce7-7a1d-4324-8513-6c5e115ae6e5 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK,TO263AB; Ufmax: 1.29V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 1.29V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTA260N055T2 IXTA260N055T2 IXYS IXTA(P)260N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Case: TO263
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
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IXTA260N055T2-7 IXTA260N055T2-7 IXYS IXTA260N055T2-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Case: TO263-7
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
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MDNA600P2200PTSF
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-Fit
Load current: 600A
Max. off-state voltage: 2.2kV
Max. forward impulse current: 15kA
Kind of package: bulk
Semiconductor structure: double series
Type of semiconductor module: diode
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MIXA300PF1200TSF MIXA300PF1200TSF.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 325A
Pulsed collector current: 650A
Power dissipation: 1.5kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
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MIXA450PF1200TSF MIXA450PF1200TSF.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.1kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
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MIXG330PF1200TSF
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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MIXG490PF1200TSF
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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MIXG330PF1200PTSF
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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MIXG490PF1200PTSF
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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VBE55-06NO7 VBE55-06NO7.pdf
VBE55-06NO7
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 68A; Ifsm: 215A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 68A
Max. forward impulse current: 215A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1275.06 грн
3+1125.94 грн
5+1074.54 грн
10+997.43 грн
В кошику  од. на суму  грн.
DPG120C300QB Littelfuse-Power-Semiconductors-DPG120C300QB-Datasheet?assetguid=A5371395-F911-4F4E-8C71-3DC160C40938
DPG120C300QB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 60Ax2; tube; Ifsm: 450A; TO3P; 275W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 60A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.45kA
Case: TO3P
Max. forward voltage: 1.4V
Power dissipation: 275W
Reverse recovery time: 35ns
Technology: HiPerFRED™ 2nd Gen
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+625.92 грн
3+515.71 грн
5+480.89 грн
В кошику  од. на суму  грн.
IXGL75N250 DS99861B(IXGL75N250).pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 110A; 430W; ISOPLUS264™
Type of transistor: IGBT
Power dissipation: 430W
Case: ISOPLUS264™
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 580A
Collector-emitter voltage: 2.5kV
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH30N450HV IXYH(t)30N450HV.pdf
IXYH30N450HV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
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IXYT30N450HV IXYH(t)30N450HV.pdf
IXYT30N450HV
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1542ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXFH96N20P IXFH(T,V)96N20P.pdf
IXFH96N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 145nC
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+641.10 грн
5+519.03 грн
10+474.26 грн
20+435.29 грн
В кошику  од. на суму  грн.
IXTP48N20T IXTA(P,Q)48N20T.pdf
IXTP48N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Reverse recovery time: 130ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 299 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+328.59 грн
3+267.81 грн
10+213.91 грн
50+164.99 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFX230N20T IXFK(X)230N20T.pdf
IXFX230N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1.67kW
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 358nC
Features of semiconductor devices: thrench gate power mosfet
на замовлення 108 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1660.79 грн
3+1426.09 грн
5+1340.69 грн
10+1204.71 грн
30+1184.81 грн
В кошику  од. на суму  грн.
MEK600-04DA PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 600A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Load current: 600A
Max. forward impulse current: 3kA
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ZY180RM
Виробник: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
товару немає в наявності
Мінімальне замовлення: 500 шт
В кошику  од. на суму  грн.
ZY180R480
Виробник: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику  од. на суму  грн.
ZY180R350
Виробник: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику  од. на суму  грн.
ZY180L350
Виробник: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику  од. на суму  грн.
ZY180L480 lfsisa001004037012273451.PDF
Виробник: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику  од. на суму  грн.
PLA191S PLA191.pdf
PLA191S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 199 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+656.28 грн
100+465.97 грн
В кошику  од. на суму  грн.
PLA191STR PLA191.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXTP14N60PM IXTP14N60PM.pdf
IXTP14N60PM
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
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IXTK150N15P IXTK150N15P-DTE.pdf
IXTK150N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: PolarHT™
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTL2N450 IXTL2N450.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
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IXTL2N470 IXTL2N470.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.7kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.7kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
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DSP25-16AR Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet?assetguid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8
DSP25-16AR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; tube; Ifsm: 300A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 28A x2
Case: ISOPLUS247™
Max. forward voltage: 1.23V
Max. forward impulse current: 0.3kA
Kind of package: tube
Semiconductor structure: double series
Power dissipation: 100W
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+643.78 грн
10+519.03 грн
В кошику  од. на суму  грн.
DSP25-16A Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet?assetguid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8
DSP25-16A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; tube; Ifsm: 300A; TO247-3; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 25A
Case: TO247-3
Max. forward voltage: 1.23V
Max. forward impulse current: 0.3kA
Kind of package: tube
Semiconductor structure: double series
Power dissipation: 160W
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DSP25-16AT-TUB DSP25-16AT.pdf
DSP25-16AT-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 25A
Case: D3PAK
Max. forward voltage: 1.16V
Max. forward impulse current: 0.3kA
Semiconductor structure: double series
Power dissipation: 160W
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DSP25-16AT-TRL media?resourcetype=datasheets&itemid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8&filename=Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V
Mounting: SMD
Case: D3PAK; TO268AA
Kind of package: reel; tape
Max. forward impulse current: 325A
Max. forward voltage: 1.23V
Max. off-state voltage: 1.6kV
Load current: 25A
Type of diode: rectifying
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
IXBH12N300 IXBH12N300_IXBT12N300.pdf
IXBH12N300
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 62nC
Turn-on time: 460ns
Turn-off time: 705ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™; FRED
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
LF2101NTR LF2101NTR.pdf
LF2101NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Mounting: SMD
Type of integrated circuit: driver
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
LAA108S LAA108.pdf
LAA108S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
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LAA108STR LAA108.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
MKI75-06A7T
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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MWI75-06A7T
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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MKI75-06A7
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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MWI30-06A7 MWI30-06A7_MWI30-06A7T.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 30A
Power dissipation: 140W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Application: motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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IXTA34N65X2 IXTA34N65X2.pdf
IXTA34N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Power dissipation: 540W
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
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IXTP01N100D IXTP(Y)01N100D.pdf
IXTP01N100D
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
на замовлення 286 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+597.35 грн
10+504.10 грн
50+326.67 грн
В кошику  од. на суму  грн.
IXTH1N300P3HV IXTH(T)1N300P3HV.pdf
IXTH1N300P3HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us
Case: TO247HV
Mounting: THT
On-state resistance: 50Ω
Power dissipation: 195W
Drain-source voltage: 3kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.8µs
Drain current: 1A
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IXTT1N300P3HV IXTH(T)1N300P3HV.pdf
IXTT1N300P3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO268HV; 1.8us
Case: TO268HV
Mounting: SMD
On-state resistance: 50Ω
Power dissipation: 195W
Drain-source voltage: 3kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.8µs
Drain current: 1A
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IXFN102N30P IXFN102N30P.pdf
IXFN102N30P
Виробник: IXYS
Category: Transistor drivers
Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: HiPerFET™; Polar™
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Polarisation: unipolar
Gate charge: 224nC
Reverse recovery time: 200ns
On-state resistance: 33mΩ
Gate-source voltage: ±30V
Drain current: 86A
Drain-source voltage: 300V
Pulsed drain current: 250A
Power dissipation: 570W
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IXFP102N15T IXFP102N15T.pdf
IXFP102N15T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 87nC
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
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IXTK102N30P IXTK102N30P-DTE.pdf
IXTK102N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 102A; 700W; TO264
Kind of channel: enhancement
Mounting: THT
Technology: PolarHT™
Case: TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 224nC
Reverse recovery time: 250ns
On-state resistance: 33mΩ
Gate-source voltage: ±20V
Drain current: 102A
Drain-source voltage: 300V
Power dissipation: 700W
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IXTP102N15T IXTA(H,P,Q)102N15T.pdf
IXTP102N15T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 87nC
Reverse recovery time: 97ns
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTR102N65X2 IXTR102N65X2.pdf
IXTR102N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Kind of channel: enhancement
Mounting: THT
Case: ISOPLUS247™
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 450ns
On-state resistance: 33mΩ
Drain current: 54A
Drain-source voltage: 650V
Power dissipation: 330W
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IXFT60N50P3 IXF_60N50P3.pdf
IXFT60N50P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
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IXYH120N65B3 media?resourcetype=datasheets&itemid=b04b9238-26f1-467e-981d-839cb4ffab3d&filename=littelfuse_discrete_igbts_xpt_ixyh120n65b3_datasheet.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 1.36kW; TO247-3
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 760A
Power dissipation: 1.36kW
Collector-emitter voltage: 650V
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 250nC
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXYH12N250C DS100791(IXYH12N250C)_.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Collector current: 12A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Technology: XPT™
Power dissipation: 310W
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Turn-on time: 12ns
Gate charge: 56nC
Turn-off time: 167ns
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IXYH120N65A5 IXYH120N65A5.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 830W; TO247-3
Collector current: 120A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 790A
Power dissipation: 830W
Collector-emitter voltage: 650V
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXYH12N250CHV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 28A; TO247AD
Collector current: 28A
Case: TO247AD
Collector-emitter voltage: 2.5kV
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXYH12N250CV1HV IXYH12N250CV1HV.pdf
IXYH12N250CV1HV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Collector current: 12A
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Technology: XPT™
Power dissipation: 310W
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Turn-on time: 32ns
Gate charge: 56nC
Turn-off time: 333ns
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LAA108PTR LAA108.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
товару немає в наявності
Мінімальне замовлення: 1000 шт
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DSP45-18A Littelfuse-Power-Semiconductors-DSP45-18A-Datasheet?assetguid=91090e86-fca9-4436-8c3a-e9be97a70b50
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 45A; tube; Ifsm: 480A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 45A
Semiconductor structure: double
Kind of package: tube
Max. forward impulse current: 0.48kA
Case: TO247-3
Max. forward voltage: 1.26V
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXTH30N50L2 IXTH(Q,T)30N50L2.pdf
IXTH30N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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DSI30-12AS-TRL Littelfuse-Power-Semiconductors-DSI30-12AS-Datasheet?assetguid=af403ce7-7a1d-4324-8513-6c5e115ae6e5
DSI30-12AS-TRL
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK,TO263AB; Ufmax: 1.29V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 1.29V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
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IXTA260N055T2 IXTA(P)260N055T2.pdf
IXTA260N055T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Case: TO263
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
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IXTA260N055T2-7 IXTA260N055T2-7.pdf
IXTA260N055T2-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Case: TO263-7
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 0.14µC
Reverse recovery time: 60ns
On-state resistance: 3.3mΩ
Drain current: 260A
Power dissipation: 480W
Drain-source voltage: 55V
Kind of channel: enhancement
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