| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DSA60C45HB | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V Type of diode: Schottky rectifying Max. off-state voltage: 45V Max. forward impulse current: 0.55kA Semiconductor structure: common cathode; double Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 160W Load current: 30A x2 Max. forward voltage: 0.66V |
на замовлення 296 шт: термін постачання 14-30 дні (днів) |
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DSA60C60PB | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward impulse current: 0.45kA Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 175W Heatsink thickness: 1.14...1.39mm Load current: 30A x2 Max. forward voltage: 0.77V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSA60C150PB | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO220AB; Ufmax: 0.8V Type of diode: Schottky rectifying Max. off-state voltage: 150V Max. forward impulse current: 390A Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 175W Heatsink thickness: 1.14...1.39mm Load current: 30A x2 Max. forward voltage: 0.8V |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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DSA60C100PB | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V Type of diode: Schottky rectifying Max. off-state voltage: 0.1kV Max. forward impulse current: 0.44kA Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 175W Heatsink thickness: 1.14...1.39mm Load current: 30A x2 Max. forward voltage: 0.78V |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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DSA60C45PB | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V Type of diode: Schottky rectifying Max. off-state voltage: 45V Max. forward impulse current: 490A Semiconductor structure: common cathode; double Case: TO220AB Mounting: THT Kind of package: tube Power dissipation: 175W Heatsink thickness: 1.14...1.39mm Load current: 30A x2 Max. forward voltage: 0.67V |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. | ||||||||||||
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DSA60C60HB | IXYS |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward impulse current: 0.55kA Semiconductor structure: common cathode; double Case: TO247-3 Mounting: THT Kind of package: tube Power dissipation: 160W Load current: 30A x2 Max. forward voltage: 0.75V |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
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DSA30C45PC | IXYS |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape; 85W Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.63V Max. forward impulse current: 340A Kind of package: reel; tape Power dissipation: 85W |
на замовлення 687 шт: термін постачання 14-30 дні (днів) |
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IXGX82N120A3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™ Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 1.25kW Gate charge: 340nC Technology: GenX3™; PT Pulsed collector current: 580A Type of transistor: IGBT Turn-on time: 109ns Kind of package: tube Case: PLUS247™ Turn-off time: 1.59µs Gate-emitter voltage: ±20V Collector current: 82A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXGX82N120B3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™ Mounting: THT Collector-emitter voltage: 1.2kV Power dissipation: 1.25kW Gate charge: 0.35µC Technology: GenX3™; PT Pulsed collector current: 500A Type of transistor: IGBT Turn-on time: 112ns Kind of package: tube Case: PLUS247™ Turn-off time: 760ns Gate-emitter voltage: ±20V Collector current: 82A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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LOC111S | IXYS |
Category: Optocouplers - othersDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1A Kind of output: transistor Mounting: SMD Type of optocoupler: optocoupler Number of channels: 1 Trigger current: 1A Insulation voltage: 3.75kV |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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| LCB111STR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC Manufacturer series: OptoMOS Operating temperature: -40...85°C Kind of output: MOSFET Case: DIP6 Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NC Turn-off time: 5ms Turn-on time: 5ms Body dimensions: 8.38x6.35x3.3mm Control current max.: 50mA On-state resistance: 35Ω Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
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LOC111STR | IXYS |
Category: Optocouplers - othersDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1A Kind of output: transistor Mounting: SMD Type of optocoupler: optocoupler Number of channels: 1 Trigger current: 1A Insulation voltage: 3.75kV |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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CLA5E1200PZ-TUB | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; TO263ABHV; SMD; tube Case: TO263ABHV Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Max. forward impulse current: 60A Kind of package: tube Type of thyristor: thyristor Gate current: 30/50mA Max. load current: 7.8A |
на замовлення 30 шт: термін постачання 14-30 дні (днів) |
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CLF20E1200PB | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 55mA; TO220AB; THT; tube Max. off-state voltage: 1.2kV Load current: 20A Case: TO220AB Mounting: THT Max. load current: 31A Max. forward impulse current: 175A Kind of package: tube Gate current: 55mA Type of thyristor: thyristor |
на замовлення 35 шт: термін постачання 14-30 дні (днів) |
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DHG10I1200PA | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W Type of diode: rectifying Case: TO220AC Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 2.23V Max. forward impulse current: 60A Kind of package: tube Reverse recovery time: 200ns Heatsink thickness: 1.14...1.39mm Power dissipation: 85W Features of semiconductor devices: fast switching Technology: Sonic FRD™ |
на замовлення 155 шт: термін постачання 14-30 дні (днів) |
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DHG20I1200PA | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO220AC; 140W Type of diode: rectifying Case: TO220AC Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Semiconductor structure: single diode Max. forward voltage: 2.25V Max. forward impulse current: 150A Kind of package: tube Reverse recovery time: 200ns Heatsink thickness: 1.14...1.39mm Power dissipation: 140W Features of semiconductor devices: fast switching Technology: Sonic FRD™ |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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DHG10I1200PM | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 65A; TO220FP-2; 30W Type of diode: rectifying Case: TO220FP-2 Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Max. forward voltage: 2.13V Max. forward impulse current: 65A Kind of package: tube Reverse recovery time: 75ns Power dissipation: 30W Features of semiconductor devices: fast switching Technology: Sonic FRD™ |
на замовлення 88 шт: термін постачання 14-30 дні (днів) |
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CLA5E1200PZ-TRL | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30mA; D2PAK; SMD; reel,tape Case: D2PAK Mounting: SMD Max. off-state voltage: 1.2kV Load current: 5A Kind of package: reel; tape Type of thyristor: thyristor Gate current: 30mA Max. load current: 7.8A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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CLA30E1200PC-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; TO263; SMD; tube Case: TO263 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Kind of package: tube Type of thyristor: thyristor Gate current: 30mA Max. load current: 47A |
товару немає в наявності |
Мінімальне замовлення: 1400 шт В кошику од. на суму грн. | ||||||||||||
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CLA20EF1200PB | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 35mA; TO220AB; THT; tube Case: TO220AB Mounting: THT Max. off-state voltage: 1.2kV Load current: 20A Max. forward impulse current: 130A Kind of package: tube Type of thyristor: thyristor Gate current: 35mA Max. load current: 35A Features of semiconductor devices: reverse conducting thyristor (RCT) |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||
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CLA20EF1200PZ-TRL | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 20mA; D2PAK; SMD; reel,tape Case: D2PAK Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Kind of package: reel; tape Type of thyristor: thyristor Gate current: 20mA Max. load current: 35A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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CLA20EF1200PZ-TUB | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 20mA; D2PAK; SMD; tube Case: D2PAK Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Kind of package: tube Type of thyristor: thyristor Gate current: 20mA Max. load current: 35A |
товару немає в наявності |
Мінімальне замовлення: 1400 шт В кошику од. на суму грн. | ||||||||||||
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CLA30E1200PC-TRL | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; D2PAK; SMD Case: D2PAK Mounting: SMD Max. off-state voltage: 1.2kV Load current: 30A Max. forward impulse current: 255A Kind of package: reel; tape Type of thyristor: thyristor Gate current: 30/50mA Max. load current: 47A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CLB40I1200PZ-TRL | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 30mA; D2PAK; SMD; reel,tape Case: D2PAK Mounting: SMD Max. off-state voltage: 1.2kV Load current: 40A Kind of package: reel; tape Type of thyristor: thyristor Gate current: 30mA Max. load current: 63A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
| CLB40I1200PZ-TUB | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 30/50mA; TO263ABHV; SMD; tube Case: TO263ABHV Mounting: SMD Max. off-state voltage: 1.2kV Load current: 40A Max. forward impulse current: 0.44kA Kind of package: tube Type of thyristor: thyristor Gate current: 30/50mA Max. load current: 63A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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CLE20E1200PC-TRL | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 40mA; TO263; SMD; reel,tape Case: TO263 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Kind of package: reel; tape Type of thyristor: thyristor Gate current: 40mA Max. load current: 35A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. | ||||||||||||
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CLE20E1200PC-TUB | IXYS |
Category: SMD/THT thyristors Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 40mA; TO263; SMD; tube Case: TO263 Mounting: SMD Max. off-state voltage: 1.2kV Load current: 20A Kind of package: tube Type of thyristor: thyristor Gate current: 40mA Max. load current: 35A |
товару немає в наявності |
Мінімальне замовлення: 1400 шт В кошику од. на суму грн. | ||||||||||||
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CLE30E1200PB | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 35A; 30A; Igt: 50mA; TO220AB; THT; tube Case: TO220AB Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Max. forward impulse current: 380A Kind of package: tube Type of thyristor: thyristor Gate current: 50mA Max. load current: 35A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DHG20C1200PB | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 10Ax2; tube; Ifsm: 60A; TO220AB; 85W Type of diode: rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 1.2kV Load current: 10A x2 Semiconductor structure: common cathode; double Max. forward voltage: 2.23V Max. forward impulse current: 60A Kind of package: tube Reverse recovery time: 200ns Heatsink thickness: 1.14...1.39mm Power dissipation: 85W Features of semiconductor devices: fast switching Technology: Sonic FRD™ |
товару немає в наявності |
Мінімальне замовлення: 50 шт В кошику од. на суму грн. | ||||||||||||
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DPU30I1200PA | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 250A; TO220-2; 123ns Type of diode: rectifying Case: TO220-2 Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Max. forward impulse current: 250A Kind of package: tube Reverse recovery time: 123ns Technology: FRED |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||
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IXA20I1200PB | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3 Case: TO220-3 Mounting: THT Kind of package: tube Gate charge: 47nC Turn-on time: 110ns Turn-off time: 350ns Gate-emitter voltage: ±20V Collector current: 22A Power dissipation: 165W Pulsed collector current: 45A Collector-emitter voltage: 1.2kV Technology: GenX3™; Planar; Sonic FRD™; XPT™ Type of transistor: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MIXA80W1200PTEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: E3-Pack Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Collector current: 84A Technology: XPT™ Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; NTC thermistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MIXG120W1200PTEH | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Case: E3-Pack Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Collector current: 140A Technology: X2PT Type of semiconductor module: IGBT Topology: IGBT three-phase bridge; NTC thermistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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DSEE30-12A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO247-3; tube; 165W Max. off-state voltage: 1.2kV Load current: 30A Max. forward impulse current: 200A Case: TO247-3 Max. forward voltage: 2.5V Power dissipation: 165W Technology: HiPerFRED™ Features of semiconductor devices: fast switching Kind of package: tube Semiconductor structure: double series Type of diode: rectifying Reverse recovery time: 30ns Mounting: THT |
на замовлення 2 шт: термін постачання 14-30 дні (днів) |
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| MEE300-06DA | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V Max. forward impulse current: 2.4kA Max. forward voltage: 1.19V Type of semiconductor module: diode Mechanical mounting: screw Max. off-state voltage: 0.6kV Electrical mounting: screw Load current: 304A Kind of package: bulk Semiconductor structure: double series Case: Y4-M6 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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IXXH80N65B4D1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 430A Mounting: THT Gate charge: 0.12µC Kind of package: tube Technology: GenX4™; Trench; XPT™ Turn-on time: 125ns Turn-off time: 222ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXXH80N65B4H1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 80A Power dissipation: 625W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 430A Mounting: THT Gate charge: 0.12µC Kind of package: tube Technology: GenX4™; Trench; XPT™ Turn-on time: 123ns Turn-off time: 147ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCC56-12io1B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.62V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 60A Case: TO240AA Max. forward voltage: 1.62V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw Max. forward impulse current: 1.62kA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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MCC56-12io8B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.57V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 60A Case: TO240AA Max. forward voltage: 1.57V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw Max. forward impulse current: 1.5kA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MCC56-18io1B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.57V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 60A Case: TO240AA Max. forward voltage: 1.57V Max. forward impulse current: 1.6kA Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCC56-08io1B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 60A Case: TO240AA Max. forward voltage: 1.62V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCC56-08io8B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 0.8kV Load current: 60A Case: TO240AA Max. forward voltage: 1.62V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCC56-14IO1 | IXYS |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 60A Case: TO240AA Max. forward voltage: 1.62V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 36 шт В кошику од. на суму грн. | |||||||||||||
| MCC56-14io8B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 60A Case: TO240AA Max. forward voltage: 1.62V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCC56-18io8B | IXYS |
Category: Thyristor modulesDescription: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.62V Type of semiconductor module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.8kV Load current: 60A Case: TO240AA Max. forward voltage: 1.62V Gate current: 100/200mA Electrical mounting: screw Kind of package: bulk Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IXYK180N65A5 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 180A; 1.15kW; TO264 Type of transistor: IGBT Power dissipation: 1.15kW Case: TO264 Mounting: THT Kind of package: tube Pulsed collector current: 1kA Turn-off time: 0.5µs Gate-emitter voltage: ±20V Collector current: 180A Collector-emitter voltage: 650V |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
| IXYN180N65A5 | IXYS |
Category: IGBT modulesDescription: Module: IGBT; Ic: 180A; SOT227B; tube; screw Case: SOT227B Kind of package: tube Gate-emitter voltage: ±20V Collector current: 180A Collector-emitter voltage: 650V Type of semiconductor module: IGBT Mechanical mounting: screw |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
| IXYX180N65A5 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 220A; 1.15kW; TO247-3 Type of transistor: IGBT Power dissipation: 1.15kW Case: TO247-3 Mounting: THT Kind of package: tube Pulsed collector current: 1kA Turn-off time: 0.5µs Gate-emitter voltage: ±20V Collector current: 220A Collector-emitter voltage: 650V |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
|
DFE240X600NA | IXYS |
Category: Diode modulesDescription: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw Max. load current: 240A Max. off-state voltage: 0.6kV Type of semiconductor module: diode Max. forward impulse current: 1.2kA Semiconductor structure: double independent Technology: FRED Mechanical mounting: screw Electrical mounting: screw Case: SOT227B Kind of package: tube Reverse recovery time: 35ns Max. forward voltage: 1.2V Load current: 120A x2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
IXBH24N170 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3 Mounting: THT Features of semiconductor devices: high voltage Type of transistor: IGBT Case: TO247-3 Kind of package: tube Gate charge: 0.14µC Turn-on time: 190ns Turn-off time: 1285ns Collector current: 24A Pulsed collector current: 230A Gate-emitter voltage: ±20V Power dissipation: 250W Collector-emitter voltage: 1.7kV Technology: BiMOSFET™ |
на замовлення 1 шт: термін постачання 14-30 дні (днів) |
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| IXBH22N300HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 3kV; 60A; 290W; TO247HV Mounting: THT Type of transistor: IGBT Case: TO247HV Kind of package: tube Collector current: 60A Power dissipation: 290W Collector-emitter voltage: 3kV |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
|
IXBH2N250 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO247-3 Mounting: THT Features of semiconductor devices: high voltage Type of transistor: IGBT Case: TO247-3 Kind of package: tube Gate charge: 10.6nC Turn-on time: 310ns Turn-off time: 252ns Collector current: 2A Pulsed collector current: 13A Gate-emitter voltage: ±20V Power dissipation: 32W Collector-emitter voltage: 2.5kV Technology: BiMOSFET™ |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
|
IXTH120P065T | IXYS |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns Mounting: THT Type of transistor: P-MOSFET Gate-source voltage: ±15V Kind of package: tube Case: TO247-3 On-state resistance: 10mΩ Reverse recovery time: 53ns Power dissipation: 298W Gate charge: 185nC Polarisation: unipolar Technology: TrenchP™ Drain current: -120A Kind of channel: enhancement Drain-source voltage: -65V |
на замовлення 107 шт: термін постачання 14-30 дні (днів) |
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IXTA120P065T | IXYS |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263 Mounting: SMD Type of transistor: P-MOSFET Gate-source voltage: ±15V Kind of package: tube Case: TO263 On-state resistance: 10mΩ Reverse recovery time: 53ns Power dissipation: 298W Gate charge: 185nC Polarisation: unipolar Technology: TrenchP™ Drain current: -120A Kind of channel: enhancement Drain-source voltage: -65V |
на замовлення 264 шт: термін постачання 14-30 дні (днів) |
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IXTP3N120 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns Reverse recovery time: 700ns Mounting: THT Power dissipation: 200W Gate charge: 42nC Polarisation: unipolar Drain current: 3A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB On-state resistance: 4.5Ω |
на замовлення 60 шт: термін постачання 14-30 дні (днів) |
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IXTP2R4N120P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W Reverse recovery time: 920ns Mounting: THT Pulsed drain current: 6A Power dissipation: 125W Gate charge: 37nC Polarisation: unipolar Technology: Polar™ Features of semiconductor devices: standard power mosfet Drain current: 2.4A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: TO220AB On-state resistance: 7.5Ω |
на замовлення 307 шт: термін постачання 14-30 дні (днів) |
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DSEC60-12A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 30Ax2; Ifsm: 200A; TO247-3; tube; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward impulse current: 200A Case: TO247-3 Kind of package: tube Max. forward voltage: 2.74V Power dissipation: 165W Reverse recovery time: 40ns Technology: HiPerFRED™ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
CS19-08ho1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; TO220AB; THT; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 31A Load current: 20A Gate current: 28/50mA Case: TO220AB Mounting: THT Kind of package: tube Max. forward impulse current: 155A |
на замовлення 109 шт: термін постачання 14-30 дні (днів) |
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CS19-08HO1S-TUB | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 31A Load current: 20A Gate current: 28/50mA Case: D2PAK Mounting: SMD Kind of package: tube Max. forward impulse current: 155A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
|
CS19-08HO1S-TRL | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.8kV Max. load current: 31A Load current: 20A Gate current: 28/50mA Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 155A |
товару немає в наявності |
Мінімальне замовлення: 800 шт В кошику од. на суму грн. |
| DSA60C45HB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 160W
Load current: 30A x2
Max. forward voltage: 0.66V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO247-3; Ufmax: 0.66V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 160W
Load current: 30A x2
Max. forward voltage: 0.66V
на замовлення 296 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 276.22 грн |
| 3+ | 231.10 грн |
| 10+ | 204.01 грн |
| 30+ | 187.08 грн |
| DSA60C60PB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.77V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO220AB; Ufmax: 0.77V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.45kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.77V
товару немає в наявності
В кошику
од. на суму грн.
| DSA60C150PB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward impulse current: 390A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.8V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 30Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Max. off-state voltage: 150V
Max. forward impulse current: 390A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.8V
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| DSA60C100PB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.78V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 30Ax2; TO220AB; Ufmax: 0.78V
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 0.44kA
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.78V
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| DSA60C45PB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.67V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 30Ax2; TO220AB; Ufmax: 0.67V
Type of diode: Schottky rectifying
Max. off-state voltage: 45V
Max. forward impulse current: 490A
Semiconductor structure: common cathode; double
Case: TO220AB
Mounting: THT
Kind of package: tube
Power dissipation: 175W
Heatsink thickness: 1.14...1.39mm
Load current: 30A x2
Max. forward voltage: 0.67V
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.
| DSA60C60HB |
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Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 160W
Load current: 30A x2
Max. forward voltage: 0.75V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 30Ax2; TO247-3; Ufmax: 0.75V
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.55kA
Semiconductor structure: common cathode; double
Case: TO247-3
Mounting: THT
Kind of package: tube
Power dissipation: 160W
Load current: 30A x2
Max. forward voltage: 0.75V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
од. на суму грн.
| DSA30C45PC |
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Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape; 85W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.63V
Max. forward impulse current: 340A
Kind of package: reel; tape
Power dissipation: 85W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 45V; 15Ax2; reel,tape; 85W
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.63V
Max. forward impulse current: 340A
Kind of package: reel; tape
Power dissipation: 85W
на замовлення 687 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 12+ | 40.11 грн |
| IXGX82N120A3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 1.25kW
Gate charge: 340nC
Technology: GenX3™; PT
Pulsed collector current: 580A
Type of transistor: IGBT
Turn-on time: 109ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 1.59µs
Gate-emitter voltage: ±20V
Collector current: 82A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 1.25kW
Gate charge: 340nC
Technology: GenX3™; PT
Pulsed collector current: 580A
Type of transistor: IGBT
Turn-on time: 109ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 1.59µs
Gate-emitter voltage: ±20V
Collector current: 82A
товару немає в наявності
В кошику
од. на суму грн.
| IXGX82N120B3 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 1.25kW
Gate charge: 0.35µC
Technology: GenX3™; PT
Pulsed collector current: 500A
Type of transistor: IGBT
Turn-on time: 112ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 760ns
Gate-emitter voltage: ±20V
Collector current: 82A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 1.25kW
Gate charge: 0.35µC
Technology: GenX3™; PT
Pulsed collector current: 500A
Type of transistor: IGBT
Turn-on time: 112ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 760ns
Gate-emitter voltage: ±20V
Collector current: 82A
товару немає в наявності
В кошику
од. на суму грн.
| LOC111S |
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Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1A
Kind of output: transistor
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Trigger current: 1A
Insulation voltage: 3.75kV
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1A
Kind of output: transistor
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Trigger current: 1A
Insulation voltage: 3.75kV
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 257.08 грн |
| LCB111STR |
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Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Case: DIP6
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 35Ω
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Kind of output: MOSFET
Case: DIP6
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Turn-off time: 5ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
On-state resistance: 35Ω
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| LOC111STR |
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Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1A
Kind of output: transistor
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Trigger current: 1A
Insulation voltage: 3.75kV
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 1A
Kind of output: transistor
Mounting: SMD
Type of optocoupler: optocoupler
Number of channels: 1
Trigger current: 1A
Insulation voltage: 3.75kV
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| CLA5E1200PZ-TUB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. forward impulse current: 60A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 7.8A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Max. forward impulse current: 60A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 7.8A
на замовлення 30 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 191.31 грн |
| 10+ | 165.92 грн |
| CLF20E1200PB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 55mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 20A
Case: TO220AB
Mounting: THT
Max. load current: 31A
Max. forward impulse current: 175A
Kind of package: tube
Gate current: 55mA
Type of thyristor: thyristor
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 55mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 20A
Case: TO220AB
Mounting: THT
Max. load current: 31A
Max. forward impulse current: 175A
Kind of package: tube
Gate current: 55mA
Type of thyristor: thyristor
на замовлення 35 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 285.34 грн |
| 10+ | 199.78 грн |
| DHG10I1200PA |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.23V
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 60A; TO220AC; 85W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.23V
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
на замовлення 155 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 166.83 грн |
| 5+ | 132.06 грн |
| 10+ | 122.74 грн |
| 25+ | 111.74 грн |
| 50+ | 104.97 грн |
| 100+ | 99.89 грн |
| DHG20I1200PA |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO220AC; 140W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Max. forward impulse current: 150A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 140W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 20A; tube; Ifsm: 150A; TO220AC; 140W
Type of diode: rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 2.25V
Max. forward impulse current: 150A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 140W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 326.36 грн |
| 10+ | 214.17 грн |
| DHG10I1200PM |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 65A; TO220FP-2; 30W
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.13V
Max. forward impulse current: 65A
Kind of package: tube
Reverse recovery time: 75ns
Power dissipation: 30W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10A; tube; Ifsm: 65A; TO220FP-2; 30W
Type of diode: rectifying
Case: TO220FP-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Max. forward voltage: 2.13V
Max. forward impulse current: 65A
Kind of package: tube
Reverse recovery time: 75ns
Power dissipation: 30W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
на замовлення 88 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 204.20 грн |
| 5+ | 161.68 грн |
| 10+ | 146.45 грн |
| 25+ | 128.67 грн |
| 50+ | 117.67 грн |
| CLA5E1200PZ-TRL |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 7.8A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 7.8A; 5A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 7.8A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| CLA30E1200PC-TUB |
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; TO263; SMD; tube
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30mA; TO263; SMD; tube
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 47A
товару немає в наявності
Мінімальне замовлення: 1400 шт
В кошику
од. на суму грн.
| CLA20EF1200PB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 35mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 130A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 35mA
Max. load current: 35A
Features of semiconductor devices: reverse conducting thyristor (RCT)
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 35mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Max. forward impulse current: 130A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 35mA
Max. load current: 35A
Features of semiconductor devices: reverse conducting thyristor (RCT)
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| CLA20EF1200PZ-TRL |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 20mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 20mA
Max. load current: 35A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 20mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 20mA
Max. load current: 35A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| CLA20EF1200PZ-TUB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 20mA; D2PAK; SMD; tube
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 20mA
Max. load current: 35A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 20mA; D2PAK; SMD; tube
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 20mA
Max. load current: 35A
товару немає в наявності
Мінімальне замовлення: 1400 шт
В кошику
од. на суму грн.
| CLA30E1200PC-TRL |
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; D2PAK; SMD
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 47A; 30A; Igt: 30/50mA; D2PAK; SMD
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 255A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 47A
товару немає в наявності
В кошику
од. на суму грн.
| CLB40I1200PZ-TRL |
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 63A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 30mA; D2PAK; SMD; reel,tape
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 30mA
Max. load current: 63A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| CLB40I1200PZ-TUB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.44kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 63A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 63A; 40A; Igt: 30/50mA; TO263ABHV; SMD; tube
Case: TO263ABHV
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 40A
Max. forward impulse current: 0.44kA
Kind of package: tube
Type of thyristor: thyristor
Gate current: 30/50mA
Max. load current: 63A
товару немає в наявності
В кошику
од. на суму грн.
| CLE20E1200PC-TRL |
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 40mA; TO263; SMD; reel,tape
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 40mA
Max. load current: 35A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 40mA; TO263; SMD; reel,tape
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: reel; tape
Type of thyristor: thyristor
Gate current: 40mA
Max. load current: 35A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.
| CLE20E1200PC-TUB |
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 40mA; TO263; SMD; tube
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 40mA
Max. load current: 35A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 20A; Igt: 40mA; TO263; SMD; tube
Case: TO263
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 40mA
Max. load current: 35A
товару немає в наявності
Мінімальне замовлення: 1400 шт
В кошику
од. на суму грн.
| CLE30E1200PB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 30A; Igt: 50mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 380A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 35A
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 35A; 30A; Igt: 50mA; TO220AB; THT; tube
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 380A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 50mA
Max. load current: 35A
товару немає в наявності
В кошику
од. на суму грн.
| DHG20C1200PB |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10Ax2; tube; Ifsm: 60A; TO220AB; 85W
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 2.23V
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 10Ax2; tube; Ifsm: 60A; TO220AB; 85W
Type of diode: rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 2.23V
Max. forward impulse current: 60A
Kind of package: tube
Reverse recovery time: 200ns
Heatsink thickness: 1.14...1.39mm
Power dissipation: 85W
Features of semiconductor devices: fast switching
Technology: Sonic FRD™
товару немає в наявності
Мінімальне замовлення: 50 шт
В кошику
од. на суму грн.
| DPU30I1200PA |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 250A; TO220-2; 123ns
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Kind of package: tube
Reverse recovery time: 123ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 250A; TO220-2; 123ns
Type of diode: rectifying
Case: TO220-2
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 250A
Kind of package: tube
Reverse recovery time: 123ns
Technology: FRED
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| IXA20I1200PB |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 47nC
Turn-on time: 110ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 165W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 22A; 165W; TO220-3
Case: TO220-3
Mounting: THT
Kind of package: tube
Gate charge: 47nC
Turn-on time: 110ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 165W
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Type of transistor: IGBT
товару немає в наявності
В кошику
од. на суму грн.
| MIXA80W1200PTEH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 84A
Technology: XPT™
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 84A
Technology: XPT™
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
товару немає в наявності
В кошику
од. на суму грн.
| MIXG120W1200PTEH |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 140A
Technology: X2PT
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Case: E3-Pack
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Collector current: 140A
Technology: X2PT
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
товару немає в наявності
В кошику
од. на суму грн.
| DSEE30-12A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO247-3; tube; 165W
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.5V
Power dissipation: 165W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: tube
Semiconductor structure: double series
Type of diode: rectifying
Reverse recovery time: 30ns
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; Ifsm: 200A; TO247-3; tube; 165W
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.5V
Power dissipation: 165W
Technology: HiPerFRED™
Features of semiconductor devices: fast switching
Kind of package: tube
Semiconductor structure: double series
Type of diode: rectifying
Reverse recovery time: 30ns
Mounting: THT
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1546.12 грн |
| MEE300-06DA |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.19V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 304A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
Category: Diode modules
Description: Module: diode; double series; 600V; If: 304A; Y4-M6; Ufmax: 1.19V
Max. forward impulse current: 2.4kA
Max. forward voltage: 1.19V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 304A
Kind of package: bulk
Semiconductor structure: double series
Case: Y4-M6
товару немає в наявності
В кошику
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| IXXH80N65B4D1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Turn-on time: 125ns
Turn-off time: 222ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Turn-on time: 125ns
Turn-off time: 222ns
товару немає в наявності
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| IXXH80N65B4H1 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Turn-on time: 123ns
Turn-off time: 147ns
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 80A; 625W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 625W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 430A
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Technology: GenX4™; Trench; XPT™
Turn-on time: 123ns
Turn-off time: 147ns
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| MCC56-12io1B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.62kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.62kA
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| MCC56-12io8B |
![]() |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.5kA
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.5kA
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| MCC56-18io1B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.6kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.6kA
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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В кошику
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| MCC56-08io1B |
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Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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В кошику
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| MCC56-08io8B |
![]() |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 800V; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 0.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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| MCC56-14IO1 |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 36 шт
В кошику
од. на суму грн.
| MCC56-14io8B |
![]() |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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В кошику
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| MCC56-18io8B |
![]() |
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
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| IXYK180N65A5 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 180A; 1.15kW; TO264
Type of transistor: IGBT
Power dissipation: 1.15kW
Case: TO264
Mounting: THT
Kind of package: tube
Pulsed collector current: 1kA
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Collector current: 180A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 180A; 1.15kW; TO264
Type of transistor: IGBT
Power dissipation: 1.15kW
Case: TO264
Mounting: THT
Kind of package: tube
Pulsed collector current: 1kA
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Collector current: 180A
Collector-emitter voltage: 650V
товару немає в наявності
Мінімальне замовлення: 300 шт
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| IXYN180N65A5 |
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Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; Ic: 180A; SOT227B; tube; screw
Case: SOT227B
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 180A
Collector-emitter voltage: 650V
Type of semiconductor module: IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; Ic: 180A; SOT227B; tube; screw
Case: SOT227B
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 180A
Collector-emitter voltage: 650V
Type of semiconductor module: IGBT
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
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| IXYX180N65A5 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 220A; 1.15kW; TO247-3
Type of transistor: IGBT
Power dissipation: 1.15kW
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 1kA
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Collector current: 220A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 220A; 1.15kW; TO247-3
Type of transistor: IGBT
Power dissipation: 1.15kW
Case: TO247-3
Mounting: THT
Kind of package: tube
Pulsed collector current: 1kA
Turn-off time: 0.5µs
Gate-emitter voltage: ±20V
Collector current: 220A
Collector-emitter voltage: 650V
товару немає в наявності
Мінімальне замовлення: 300 шт
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| DFE240X600NA |
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Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Max. load current: 240A
Max. off-state voltage: 0.6kV
Type of semiconductor module: diode
Max. forward impulse current: 1.2kA
Semiconductor structure: double independent
Technology: FRED
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.2V
Load current: 120A x2
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Max. load current: 240A
Max. off-state voltage: 0.6kV
Type of semiconductor module: diode
Max. forward impulse current: 1.2kA
Semiconductor structure: double independent
Technology: FRED
Mechanical mounting: screw
Electrical mounting: screw
Case: SOT227B
Kind of package: tube
Reverse recovery time: 35ns
Max. forward voltage: 1.2V
Load current: 120A x2
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| IXBH24N170 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Collector current: 24A
Pulsed collector current: 230A
Gate-emitter voltage: ±20V
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Collector current: 24A
Pulsed collector current: 230A
Gate-emitter voltage: ±20V
Power dissipation: 250W
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1881.60 грн |
| IXBH22N300HV |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 60A; 290W; TO247HV
Mounting: THT
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Collector current: 60A
Power dissipation: 290W
Collector-emitter voltage: 3kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 3kV; 60A; 290W; TO247HV
Mounting: THT
Type of transistor: IGBT
Case: TO247HV
Kind of package: tube
Collector current: 60A
Power dissipation: 290W
Collector-emitter voltage: 3kV
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
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| IXBH2N250 |
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Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 10.6nC
Turn-on time: 310ns
Turn-off time: 252ns
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Power dissipation: 32W
Collector-emitter voltage: 2.5kV
Technology: BiMOSFET™
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 2.5kV; 2A; 32W; TO247-3
Mounting: THT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Case: TO247-3
Kind of package: tube
Gate charge: 10.6nC
Turn-on time: 310ns
Turn-off time: 252ns
Collector current: 2A
Pulsed collector current: 13A
Gate-emitter voltage: ±20V
Power dissipation: 32W
Collector-emitter voltage: 2.5kV
Technology: BiMOSFET™
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
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| IXTH120P065T |
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Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Mounting: THT
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO247-3
On-state resistance: 10mΩ
Reverse recovery time: 53ns
Power dissipation: 298W
Gate charge: 185nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -65V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; 53ns
Mounting: THT
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO247-3
On-state resistance: 10mΩ
Reverse recovery time: 53ns
Power dissipation: 298W
Gate charge: 185nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -65V
на замовлення 107 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 666.40 грн |
| 10+ | 422.41 грн |
| 30+ | 387.70 грн |
| 60+ | 380.08 грн |
| IXTA120P065T |
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Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO263
On-state resistance: 10mΩ
Reverse recovery time: 53ns
Power dissipation: 298W
Gate charge: 185nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -65V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -65V; -120A; 298W; TO263
Mounting: SMD
Type of transistor: P-MOSFET
Gate-source voltage: ±15V
Kind of package: tube
Case: TO263
On-state resistance: 10mΩ
Reverse recovery time: 53ns
Power dissipation: 298W
Gate charge: 185nC
Polarisation: unipolar
Technology: TrenchP™
Drain current: -120A
Kind of channel: enhancement
Drain-source voltage: -65V
на замовлення 264 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 437.58 грн |
| 10+ | 336.07 грн |
| 50+ | 277.66 грн |
| IXTP3N120 |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Reverse recovery time: 700ns
Mounting: THT
Power dissipation: 200W
Gate charge: 42nC
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 4.5Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO220AB; 700ns
Reverse recovery time: 700ns
Mounting: THT
Power dissipation: 200W
Gate charge: 42nC
Polarisation: unipolar
Drain current: 3A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 4.5Ω
на замовлення 60 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 596.20 грн |
| 5+ | 503.67 грн |
| 10+ | 480.82 грн |
| 50+ | 430.03 грн |
| IXTP2R4N120P |
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Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Reverse recovery time: 920ns
Mounting: THT
Pulsed drain current: 6A
Power dissipation: 125W
Gate charge: 37nC
Polarisation: unipolar
Technology: Polar™
Features of semiconductor devices: standard power mosfet
Drain current: 2.4A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 7.5Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Reverse recovery time: 920ns
Mounting: THT
Pulsed drain current: 6A
Power dissipation: 125W
Gate charge: 37nC
Polarisation: unipolar
Technology: Polar™
Features of semiconductor devices: standard power mosfet
Drain current: 2.4A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220AB
On-state resistance: 7.5Ω
на замовлення 307 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 463.11 грн |
| 10+ | 402.09 грн |
| 50+ | 331.83 грн |
| 100+ | 293.74 грн |
| 250+ | 286.12 грн |
| DSEC60-12A |
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Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30Ax2; Ifsm: 200A; TO247-3; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 2.74V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30Ax2; Ifsm: 200A; TO247-3; tube; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 2.74V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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| CS19-08ho1 |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; TO220AB; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: TO220AB
Mounting: THT
Kind of package: tube
Max. forward impulse current: 155A
на замовлення 109 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 297.19 грн |
| 10+ | 128.67 грн |
| 25+ | 120.20 грн |
| CS19-08HO1S-TUB |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 155A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; tube
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: D2PAK
Mounting: SMD
Kind of package: tube
Max. forward impulse current: 155A
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| CS19-08HO1S-TRL |
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Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 155A
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 31A; 20A; Igt: 28/50mA; D2PAK; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.8kV
Max. load current: 31A
Load current: 20A
Gate current: 28/50mA
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 155A
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику
од. на суму грн.




















