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IXFN102N30P IXFN102N30P IXYS IXFN102N30P.pdf Category: Transistor modules
Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: HiPerFET™; Polar™
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Polarisation: unipolar
Gate charge: 224nC
Reverse recovery time: 200ns
On-state resistance: 33mΩ
Gate-source voltage: ±30V
Drain current: 86A
Drain-source voltage: 300V
Pulsed drain current: 250A
Power dissipation: 570W
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IXFP102N15T IXFP102N15T IXYS IXFP102N15T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 87nC
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
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IXTK102N30P IXTK102N30P IXYS IXTK102N30P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 102A; 700W; TO264
Kind of channel: enhancement
Mounting: THT
Technology: PolarHT™
Case: TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 224nC
Reverse recovery time: 250ns
On-state resistance: 33mΩ
Gate-source voltage: ±20V
Drain current: 102A
Drain-source voltage: 300V
Power dissipation: 700W
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IXTP102N15T IXTP102N15T IXYS IXTA(H,P,Q)102N15T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 87nC
Reverse recovery time: 97ns
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
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 Мінімальне замовлення: 300 шт
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IXTR102N65X2 IXTR102N65X2 IXYS IXTR102N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 450ns
Power dissipation: 330W
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 54A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 33mΩ
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IXFT60N50P3 IXFT60N50P3 IXYS IXF_60N50P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
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IXYH120N65B3 IXYS media?resourcetype=datasheets&itemid=b04b9238-26f1-467e-981d-839cb4ffab3d&filename=littelfuse_discrete_igbts_xpt_ixyh120n65b3_datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 1.36kW; TO247-3
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 760A
Power dissipation: 1.36kW
Collector-emitter voltage: 650V
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 250nC
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 Мінімальне замовлення: 300 шт
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IXYH12N250C IXYS DS100791(IXYH12N250C)_.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Collector current: 12A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Technology: XPT™
Power dissipation: 310W
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Turn-on time: 12ns
Gate charge: 56nC
Turn-off time: 167ns
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IXYH120N65A5 IXYS IXYH120N65A5.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 830W; TO247-3
Collector current: 120A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 790A
Power dissipation: 830W
Collector-emitter voltage: 650V
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
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 Мінімальне замовлення: 300 шт
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IXYH12N250CHV IXYS Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 28A; TO247AD
Collector current: 28A
Case: TO247AD
Collector-emitter voltage: 2.5kV
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXYH12N250CV1HV IXYH12N250CV1HV IXYS IXYH12N250CV1HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Collector current: 12A
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Technology: XPT™
Power dissipation: 310W
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Turn-on time: 32ns
Gate charge: 56nC
Turn-off time: 333ns
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LAA108PTR IXYS LAA108.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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DSP45-18A IXYS Littelfuse-Power-Semiconductors-DSP45-18A-Datasheet?assetguid=91090e86-fca9-4436-8c3a-e9be97a70b50 Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 45A; tube; Ifsm: 480A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 45A
Semiconductor structure: double
Kind of package: tube
Max. forward impulse current: 0.48kA
Case: TO247-3
Max. forward voltage: 1.26V
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 Мінімальне замовлення: 300 шт
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IXTH30N50L2 IXTH30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
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DSI30-12AS-TRL DSI30-12AS-TRL IXYS Littelfuse-Power-Semiconductors-DSI30-12AS-Datasheet?assetguid=af403ce7-7a1d-4324-8513-6c5e115ae6e5 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK,TO263AB; Ufmax: 1.29V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 1.29V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
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 Мінімальне замовлення: 800 шт
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IXTA260N055T2 IXTA260N055T2 IXYS IXTA(P)260N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
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IXTA260N055T2-7 IXTA260N055T2-7 IXYS IXTA260N055T2-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
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IXTH260N055T2 IXTH260N055T2 IXYS IXTH260N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
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PLA132S PLA132S IXYS PLA132.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
на замовлення 143 шт:
термін постачання 14-30 дні (днів)
1+722.92 грн
100+512.14 грн
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PAA132S PAA132S IXYS PAA132.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
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PAA132STR IXYS PAA132.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
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 Мінімальне замовлення: 1000 шт
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PLA132STR IXYS PLA132.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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MCC56-14io1B MCC56-14io1B IXYS PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
1+2224.37 грн
5+1870.79 грн
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DPG30C300PB DPG30C300PB IXYS Littelfuse-Power-Semiconductors-DPG30C300PB-Datasheet?assetguid=C29230B4-702B-4553-95E4-41ABDC8A3A6D Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.26V
Load current: 15A x2
Power dissipation: 90W
Max. forward impulse current: 0.24kA
Max. off-state voltage: 300V
на замовлення 148 шт:
термін постачання 14-30 дні (днів)
2+239.76 грн
3+168.46 грн
10+145.60 грн
Мінімальне замовлення: 2 шт
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DPG20C300PB DPG20C300PB IXYS DPG20C300PB.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A x2
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 300V
на замовлення 137 шт:
термін постачання 14-30 дні (днів)
3+157.71 грн
4+133.75 грн
10+117.67 грн
50+107.51 грн
Мінімальне замовлення: 3 шт
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DSSK28-01AS-TRL IXYS media?resourcetype=datasheets&itemid=65b319ff-85fc-4a3d-9957-56a940fb8316&filename=Power-Semiconductor-Discrete-Diode-DSSK28-01AS-Datasheet Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 15A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A
Semiconductor structure: common cathode
Capacitance: 334pF
Max. forward voltage: 0.82V
Leakage current: 0.5mA
Max. forward impulse current: 230A
Kind of package: reel; tape
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 Мінімальне замовлення: 800 шт
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IXGX55N120A3H1 IXGX55N120A3H1 IXYS IXGK(X)55N120A3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 460W
Gate charge: 185nC
Technology: GenX3™; PT
Pulsed collector current: 400A
Type of transistor: IGBT
Turn-on time: 70ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 1253ns
Gate-emitter voltage: ±20V
Collector current: 55A
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OMA160S OMA160S IXYS OMA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
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OMA160STR IXYS OMA160.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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CLA60MT1200NTZ CLA60MT1200NTZ IXYS CLA60MT1200NTZ.pdf Category: Triacs
Description: Triac; 1.2kV; 30A; Igt: 60/80mA; D3PAK; tube; Ifsm: 325A
Max. forward impulse current: 325A
Gate current: 60/80mA
Max. off-state voltage: 1.2kV
Max. load current: 30A
Kind of package: tube
Case: D3PAK
Typ of triac: standard
Mounting: SMD
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IXTH1N450HV IXTH1N450HV IXYS IXTH(T)1N450HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 46nC
Reverse recovery time: 1.75µs
Drain current: 1A
On-state resistance: 80Ω
Power dissipation: 520W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
1+3381.23 грн
5+2776.56 грн
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IXTT02N450HV IXTT02N450HV IXYS IXTA(T)02N450HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 120 шт:
термін постачання 14-30 дні (днів)
1+2256.28 грн
5+1858.94 грн
10+1709.11 грн
30+1610.07 грн
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IXTT1N450HV IXTT1N450HV IXYS IXTH(T)1N450HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 46nC
Reverse recovery time: 1.75µs
Drain current: 1A
On-state resistance: 80Ω
Power dissipation: 520W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXYX40N450HV IXYX40N450HV IXYS IXYX40N450HV.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 40A; 660W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 170nC
Turn-on time: 786ns
Turn-off time: 1128ns
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 660W
Pulsed collector current: 350A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTH02N450HV IXTH02N450HV IXYS IXTH02N450HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXTX1R4N450HV IXYS IXTX1R4N450HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Reverse recovery time: 660ns
Drain current: 1.4A
Pulsed drain current: 5A
Gate-source voltage: ±20V
On-state resistance: 40Ω
Power dissipation: 960W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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В кошику  од. на суму  грн.
IXKC23N60C5 IXKC23N60C5 IXYS IXKC23N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXBT12N300HV IXBT12N300HV IXYS littelfuse-discrete-igbts-ixb-12n300hv-datasheet?assetguid=ab24dcf4-1e21-4218-9669-c9c01e669b5c Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Mounting: SMD
Collector-emitter voltage: 3kV
Power dissipation: 160W
Gate charge: 62nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 98A
Type of transistor: IGBT
Turn-on time: 64ns
Case: TO268
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 30A
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
MCD56-16io8B IXYS MCD56-16io8B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. load current: 100A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
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В кошику  од. на суму  грн.
MCD56-16IO1B IXYS MCD56-16IO1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. load current: 100A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
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В кошику  од. на суму  грн.
MCC56-16io8B MCC56-16io8B IXYS L075.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.6kA
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В кошику  од. на суму  грн.
CS20-16IO1 CS20-16IO1 IXYS CS20-12IO1-DTE.pdf CS20-16io1.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 31A
Load current: 20A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 260A
на замовлення 151 шт:
термін постачання 14-30 дні (днів)
1+529.66 грн
5+361.46 грн
10+333.53 грн
20+309.82 грн
30+297.97 грн
120+275.96 грн
В кошику  од. на суму  грн.
CS30-12IO1 CS30-12IO1 IXYS CS30-12IO1-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 0.4kA
Case: TO247AD
Gate current: 55mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
на замовлення 103 шт:
термін постачання 14-30 дні (днів)
2+402.03 грн
10+270.04 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CS30-16IO1 CS30-16IO1 IXYS CS30-12IO1-DTE.pdf description Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 55mA
Max. off-state voltage: 1.6kV
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 0.4kA
Type of thyristor: thyristor
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
1+536.95 грн
10+322.52 грн
30+316.60 грн
В кошику  од. на суму  грн.
CS30-14IO1 CS30-14IO1 IXYS CS30-12IO1-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 55mA
Max. off-state voltage: 1.4kV
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 0.4kA
Type of thyristor: thyristor
на замовлення 231 шт:
термін постачання 14-30 дні (днів)
2+437.58 грн
10+353.00 грн
30+249.72 грн
120+244.64 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CS20-12IO1 CS20-12IO1 IXYS CS20-12IO1-DTE.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 50mA
Max. off-state voltage: 1.2kV
Load current: 20A
Max. load current: 31A
Max. forward impulse current: 260A
Type of thyristor: thyristor
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
1+470.40 грн
3+405.48 грн
5+383.47 грн
10+347.07 грн
30+288.66 грн
В кошику  од. на суму  грн.
IXTH130N20T IXTH130N20T IXYS IXTQ130N20T_IXTH130N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Drain-source voltage: 200V
Drain current: 75A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 16mΩ
Pulsed drain current: 320A
Power dissipation: 830W
Technology: Trench™
Kind of channel: enhancement
Gate charge: 150nC
Reverse recovery time: 150ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
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DSA240X150NA DSA240X150NA IXYS DSA240X150NA.pdf Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Max. forward voltage: 0.85V
Load current: 120A x2
Max. off-state voltage: 150V
Max. forward impulse current: 1.6kA
Max. load current: 240A
Kind of package: tube
Semiconductor structure: double independent
Type of semiconductor module: diode
Case: SOT227B
Mechanical mounting: screw
Features of semiconductor devices: Schottky
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CPC3982TTR IXYS CPC3982?assetguid=E1F44516-E781-43A7-ABB7-563255C890B1 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Power dissipation: 0.4W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain current: 0.15A
Gate-source voltage: ±15V
On-state resistance: 380Ω
Drain-source voltage: 800V
Kind of channel: depletion
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 2200 шт:
термін постачання 14-30 дні (днів)
14+32.82 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
PLA193 PLA193 IXYS PLA193.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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PLA193E PLA193E IXYS PLA193.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
2+237.93 грн
50+144.75 грн
250+115.97 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PLA193S PLA193S IXYS PLA193.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
2+450.34 грн
10+341.14 грн
50+311.52 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PLA193STR IXYS PLA193.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXFH24N90P IXFH24N90P IXYS IXF_24N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 24A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Case: TO247-3
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 130nC
Kind of channel: enhancement
Kind of package: tube
Power dissipation: 660W
на замовлення 225 шт:
термін постачання 14-30 дні (днів)
1+836.87 грн
30+748.32 грн
В кошику  од. на суму  грн.
IXFR24N90P IXFR24N90P IXYS IXFR24N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Case: ISOPLUS247™
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 130nC
Kind of channel: enhancement
Kind of package: tube
Power dissipation: 230W
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DSI30-16A DSI30-16A IXYS DSI30-16A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: tube
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
3+199.65 грн
10+148.99 грн
50+104.97 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DSI30-16AS DSI30-16AS IXYS DSI30-16AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: reel; tape
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DSI30-16AS-TUB DSI30-16AS-TUB IXYS DSI30-16AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: tube
товару немає в наявності
 Мінімальне замовлення: 1400 шт
В кошику  од. на суму  грн.
DPG30C400PB DPG30C400PB IXYS media?resourcetype=datasheets&itemid=EFDD0730-3DB0-4D77-9198-01A406BAA107&filename=Littelfuse-Power-Semiconductors-DPG30C400PB-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO220AB; 90W
Mounting: THT
Case: TO220AB
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 45ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.39V
Max. forward impulse current: 190A
Load current: 15A x2
Power dissipation: 90W
Max. off-state voltage: 0.4kV
на замовлення 83 шт:
термін постачання 14-30 дні (днів)
3+216.97 грн
10+178.61 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
MD16110A-DKM2MM IXYS littelfuse_power_semiconductor_rectifier_module_circuit_package_a_datasheet.pdf?assetguid=7ed5c66f-3580-4b5e-91ee-69f455430ce8 Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 110A; package A
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Case: package A
Electrical mounting: screw
Max. forward voltage: 1.6V
Load current: 110A
Max. load current: 170A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.5kA
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IXFN102N30P IXFN102N30P.pdf
IXFN102N30P
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: HiPerFET™; Polar™
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Polarisation: unipolar
Gate charge: 224nC
Reverse recovery time: 200ns
On-state resistance: 33mΩ
Gate-source voltage: ±30V
Drain current: 86A
Drain-source voltage: 300V
Pulsed drain current: 250A
Power dissipation: 570W
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IXFP102N15T IXFP102N15T.pdf
IXFP102N15T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 87nC
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
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IXTK102N30P IXTK102N30P-DTE.pdf
IXTK102N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 102A; 700W; TO264
Kind of channel: enhancement
Mounting: THT
Technology: PolarHT™
Case: TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 224nC
Reverse recovery time: 250ns
On-state resistance: 33mΩ
Gate-source voltage: ±20V
Drain current: 102A
Drain-source voltage: 300V
Power dissipation: 700W
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IXTP102N15T IXTA(H,P,Q)102N15T.pdf
IXTP102N15T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 87nC
Reverse recovery time: 97ns
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTR102N65X2 IXTR102N65X2.pdf
IXTR102N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 450ns
Power dissipation: 330W
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 54A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 33mΩ
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IXFT60N50P3 IXF_60N50P3.pdf
IXFT60N50P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
IXYH120N65B3 media?resourcetype=datasheets&itemid=b04b9238-26f1-467e-981d-839cb4ffab3d&filename=littelfuse_discrete_igbts_xpt_ixyh120n65b3_datasheet.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 1.36kW; TO247-3
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 760A
Power dissipation: 1.36kW
Collector-emitter voltage: 650V
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 250nC
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH12N250C DS100791(IXYH12N250C)_.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247-3
Collector current: 12A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Technology: XPT™
Power dissipation: 310W
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Turn-on time: 12ns
Gate charge: 56nC
Turn-off time: 167ns
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IXYH120N65A5 IXYH120N65A5.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 830W; TO247-3
Collector current: 120A
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 790A
Power dissipation: 830W
Collector-emitter voltage: 650V
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH12N250CHV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 28A; TO247AD
Collector current: 28A
Case: TO247AD
Collector-emitter voltage: 2.5kV
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH12N250CV1HV IXYH12N250CV1HV.pdf
IXYH12N250CV1HV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 2.5kV; 12A; 310W; TO247HV
Collector current: 12A
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Technology: XPT™
Power dissipation: 310W
Collector-emitter voltage: 2.5kV
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Turn-on time: 32ns
Gate charge: 56nC
Turn-off time: 333ns
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В кошику  од. на суму  грн.
LAA108PTR LAA108.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Case: DIP8
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x2.16mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Kind of output: MOSFET
Manufacturer series: OptoMOS
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
DSP45-18A Littelfuse-Power-Semiconductors-DSP45-18A-Datasheet?assetguid=91090e86-fca9-4436-8c3a-e9be97a70b50
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.8kV; 45A; tube; Ifsm: 480A; TO247-3
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.8kV
Load current: 45A
Semiconductor structure: double
Kind of package: tube
Max. forward impulse current: 0.48kA
Case: TO247-3
Max. forward voltage: 1.26V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTH30N50L2 IXTH(Q,T)30N50L2.pdf
IXTH30N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
DSI30-12AS-TRL Littelfuse-Power-Semiconductors-DSI30-12AS-Datasheet?assetguid=af403ce7-7a1d-4324-8513-6c5e115ae6e5
DSI30-12AS-TRL
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 30A; D2PAK,TO263AB; Ufmax: 1.29V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK; TO263AB
Max. forward voltage: 1.29V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTA260N055T2 IXTA(P)260N055T2.pdf
IXTA260N055T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
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В кошику  од. на суму  грн.
IXTA260N055T2-7 IXTA260N055T2-7.pdf
IXTA260N055T2-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO263-7; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
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В кошику  од. на суму  грн.
IXTH260N055T2 IXTH260N055T2.pdf
IXTH260N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 260A; 480W; TO247-3; 60ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 260A
Power dissipation: 480W
Case: TO247-3
On-state resistance: 3.3mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 60ns
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В кошику  од. на суму  грн.
PLA132S PLA132.pdf
PLA132S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
на замовлення 143 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+722.92 грн
100+512.14 грн
В кошику  од. на суму  грн.
PAA132S PAA132.pdf
PAA132S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
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PAA132STR PAA132.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO x2
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
PLA132STR PLA132.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Case: DIP6
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Turn-off time: 2ms
Turn-on time: 5ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 1Ω
Switched voltage: max. 60V AC; max. 60V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Manufacturer series: OptoMOS
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
MCC56-14io1B PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC56-14io1B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 60A; TO240AA; Ufmax: 1.62V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.62V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2224.37 грн
5+1870.79 грн
В кошику  од. на суму  грн.
DPG30C300PB Littelfuse-Power-Semiconductors-DPG30C300PB-Datasheet?assetguid=C29230B4-702B-4553-95E4-41ABDC8A3A6D
DPG30C300PB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 15Ax2; tube; Ifsm: 240A; TO220AB; 90W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.26V
Load current: 15A x2
Power dissipation: 90W
Max. forward impulse current: 0.24kA
Max. off-state voltage: 300V
на замовлення 148 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+239.76 грн
3+168.46 грн
10+145.60 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DPG20C300PB DPG20C300PB.pdf
DPG20C300PB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 10Ax2; tube; Ifsm: 140A; TO220AB; 65W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™ 2nd Gen
Type of diode: rectifying
Mounting: THT
Case: TO220AB
Kind of package: tube
Reverse recovery time: 35ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.27V
Load current: 10A x2
Power dissipation: 65W
Max. forward impulse current: 140A
Max. off-state voltage: 300V
на замовлення 137 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+157.71 грн
4+133.75 грн
10+117.67 грн
50+107.51 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DSSK28-01AS-TRL media?resourcetype=datasheets&itemid=65b319ff-85fc-4a3d-9957-56a940fb8316&filename=Power-Semiconductor-Discrete-Diode-DSSK28-01AS-Datasheet
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 15A
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 15A
Semiconductor structure: common cathode
Capacitance: 334pF
Max. forward voltage: 0.82V
Leakage current: 0.5mA
Max. forward impulse current: 230A
Kind of package: reel; tape
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXGX55N120A3H1 IXGK(X)55N120A3H1.pdf
IXGX55N120A3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™
Mounting: THT
Collector-emitter voltage: 1.2kV
Power dissipation: 460W
Gate charge: 185nC
Technology: GenX3™; PT
Pulsed collector current: 400A
Type of transistor: IGBT
Turn-on time: 70ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 1253ns
Gate-emitter voltage: ±20V
Collector current: 55A
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OMA160S OMA160.pdf
OMA160S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
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В кошику  од. на суму  грн.
OMA160STR OMA160.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 50mA; max.250VAC
Insulation voltage: 3.75kV
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 125µs
Turn-on time: 125µs
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 50mA
Control current max.: 50mA
On-state resistance: 100Ω
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
CLA60MT1200NTZ CLA60MT1200NTZ.pdf
CLA60MT1200NTZ
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; Igt: 60/80mA; D3PAK; tube; Ifsm: 325A
Max. forward impulse current: 325A
Gate current: 60/80mA
Max. off-state voltage: 1.2kV
Max. load current: 30A
Kind of package: tube
Case: D3PAK
Typ of triac: standard
Mounting: SMD
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В кошику  од. на суму  грн.
IXTH1N450HV IXTH(T)1N450HV.pdf
IXTH1N450HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO247-3; 1.75us
Case: TO247-3
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 46nC
Reverse recovery time: 1.75µs
Drain current: 1A
On-state resistance: 80Ω
Power dissipation: 520W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 8 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+3381.23 грн
5+2776.56 грн
В кошику  од. на суму  грн.
IXTT02N450HV IXTA(T)02N450HV.pdf
IXTT02N450HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO268HV; 1.6us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 120 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+2256.28 грн
5+1858.94 грн
10+1709.11 грн
30+1610.07 грн
В кошику  од. на суму  грн.
IXTT1N450HV IXTH(T)1N450HV.pdf
IXTT1N450HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1A; 520W; TO268HV; 1.75us
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 46nC
Reverse recovery time: 1.75µs
Drain current: 1A
On-state resistance: 80Ω
Power dissipation: 520W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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В кошику  од. на суму  грн.
IXYX40N450HV IXYX40N450HV.pdf
IXYX40N450HV
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 40A; 660W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 170nC
Turn-on time: 786ns
Turn-off time: 1128ns
Gate-emitter voltage: ±20V
Collector current: 40A
Power dissipation: 660W
Pulsed collector current: 350A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTH02N450HV IXTH02N450HV.pdf
IXTH02N450HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 0.2A; 113W; TO247HV; 1.6us
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 625Ω
Power dissipation: 113W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXTX1R4N450HV IXTX1R4N450HV.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 1.4A; Idm: 5A; 960W; 660ns
Case: TO247PLUS-HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Gate charge: 88nC
Reverse recovery time: 660ns
Drain current: 1.4A
Pulsed drain current: 5A
Gate-source voltage: ±20V
On-state resistance: 40Ω
Power dissipation: 960W
Drain-source voltage: 4.5kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXKC23N60C5 IXKC23N60C5.pdf
IXKC23N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 147W; ISOPLUS220™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Power dissipation: 147W
Case: ISOPLUS220™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXBT12N300HV littelfuse-discrete-igbts-ixb-12n300hv-datasheet?assetguid=ab24dcf4-1e21-4218-9669-c9c01e669b5c
IXBT12N300HV
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 30A; 160W; TO268
Mounting: SMD
Collector-emitter voltage: 3kV
Power dissipation: 160W
Gate charge: 62nC
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Pulsed collector current: 98A
Type of transistor: IGBT
Turn-on time: 64ns
Case: TO268
Turn-off time: 180ns
Gate-emitter voltage: ±20V
Collector current: 30A
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
MCD56-16io8B MCD56-16io8B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. load current: 100A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
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MCD56-16IO1B MCD56-16IO1B.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 60A; TO240AA; Ufmax: 1.24V; bulk
Mechanical mounting: screw
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.24V
Load current: 60A
Max. load current: 100A
Max. forward impulse current: 1.5kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
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В кошику  од. на суму  грн.
MCC56-16io8B L075.pdf PCN210915_TO240 screw.pdf PCN210930_TO240 screw.pdf
MCC56-16io8B
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 60A; TO240AA; Ufmax: 1.57V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 60A
Case: TO240AA
Max. forward voltage: 1.57V
Gate current: 100/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
Max. forward impulse current: 1.6kA
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В кошику  од. на суму  грн.
CS20-16IO1 CS20-12IO1-DTE.pdf CS20-16io1.pdf
CS20-16IO1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Type of thyristor: thyristor
Max. off-state voltage: 1.6kV
Max. load current: 31A
Load current: 20A
Gate current: 50mA
Case: TO247AD
Mounting: THT
Kind of package: tube
Max. forward impulse current: 260A
на замовлення 151 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+529.66 грн
5+361.46 грн
10+333.53 грн
20+309.82 грн
30+297.97 грн
120+275.96 грн
В кошику  од. на суму  грн.
CS30-12IO1 CS30-12IO1-DTE.pdf
CS30-12IO1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor: standard; 1.2kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT
Max. off-state voltage: 1.2kV
Load current: 30A
Max. forward impulse current: 0.4kA
Case: TO247AD
Gate current: 55mA
Max. load current: 47A
Kind of package: tube
Type of thyristor: standard
Mounting: THT
на замовлення 103 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+402.03 грн
10+270.04 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CS30-16IO1 description CS30-12IO1-DTE.pdf
CS30-16IO1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 55mA
Max. off-state voltage: 1.6kV
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 0.4kA
Type of thyristor: thyristor
на замовлення 90 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+536.95 грн
10+322.52 грн
30+316.60 грн
В кошику  од. на суму  грн.
CS30-14IO1 CS30-12IO1-DTE.pdf
CS30-14IO1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.4kV; Ifmax: 47A; 30A; Igt: 55mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 55mA
Max. off-state voltage: 1.4kV
Load current: 30A
Max. load current: 47A
Max. forward impulse current: 0.4kA
Type of thyristor: thyristor
на замовлення 231 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+437.58 грн
10+353.00 грн
30+249.72 грн
120+244.64 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
CS20-12IO1 CS20-12IO1-DTE.pdf
CS20-12IO1
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 50mA; TO247AD; THT; tube
Case: TO247AD
Mounting: THT
Kind of package: tube
Gate current: 50mA
Max. off-state voltage: 1.2kV
Load current: 20A
Max. load current: 31A
Max. forward impulse current: 260A
Type of thyristor: thyristor
на замовлення 47 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+470.40 грн
3+405.48 грн
5+383.47 грн
10+347.07 грн
30+288.66 грн
В кошику  од. на суму  грн.
IXTH130N20T IXTQ130N20T_IXTH130N20T.pdf
IXTH130N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 200V; 75A; Idm: 320A; 830W
Drain-source voltage: 200V
Drain current: 75A
Case: TO247-3
Polarisation: unipolar
On-state resistance: 16mΩ
Pulsed drain current: 320A
Power dissipation: 830W
Technology: Trench™
Kind of channel: enhancement
Gate charge: 150nC
Reverse recovery time: 150ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
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В кошику  од. на суму  грн.
DSA240X150NA DSA240X150NA.pdf
DSA240X150NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Max. forward voltage: 0.85V
Load current: 120A x2
Max. off-state voltage: 150V
Max. forward impulse current: 1.6kA
Max. load current: 240A
Kind of package: tube
Semiconductor structure: double independent
Type of semiconductor module: diode
Case: SOT227B
Mechanical mounting: screw
Features of semiconductor devices: Schottky
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В кошику  од. на суму  грн.
CPC3982TTR CPC3982?assetguid=E1F44516-E781-43A7-ABB7-563255C890B1
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.15A; 0.4W; SOT23
Power dissipation: 0.4W
Mounting: SMD
Case: SOT23
Kind of package: reel; tape
Drain current: 0.15A
Gate-source voltage: ±15V
On-state resistance: 380Ω
Drain-source voltage: 800V
Kind of channel: depletion
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 2200 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
14+32.82 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
PLA193 PLA193.pdf
PLA193
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
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PLA193E PLA193.pdf
PLA193E
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+237.93 грн
50+144.75 грн
250+115.97 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PLA193S PLA193.pdf
PLA193S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+450.34 грн
10+341.14 грн
50+311.52 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
PLA193STR PLA193.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXFH24N90P IXF_24N90P.pdf
IXFH24N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 24A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Case: TO247-3
On-state resistance: 0.42Ω
Mounting: THT
Gate charge: 130nC
Kind of channel: enhancement
Kind of package: tube
Power dissipation: 660W
на замовлення 225 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+836.87 грн
30+748.32 грн
В кошику  од. на суму  грн.
IXFR24N90P IXFR24N90P.pdf
IXFR24N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Case: ISOPLUS247™
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 130nC
Kind of channel: enhancement
Kind of package: tube
Power dissipation: 230W
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DSI30-16A DSI30-16A.pdf
DSI30-16A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 30A; tube; Ifsm: 255A; TO220AC; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: tube
на замовлення 80 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+199.65 грн
10+148.99 грн
50+104.97 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
DSI30-16AS DSI30-16AS.pdf
DSI30-16AS
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: reel; tape
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В кошику  од. на суму  грн.
DSI30-16AS-TUB DSI30-16AS.pdf
DSI30-16AS-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 30A; D2PAK; Ufmax: 1.25V; Ifsm: 255A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 30A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.25V
Max. forward impulse current: 255A
Power dissipation: 160W
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 1400 шт
В кошику  од. на суму  грн.
DPG30C400PB media?resourcetype=datasheets&itemid=EFDD0730-3DB0-4D77-9198-01A406BAA107&filename=Littelfuse-Power-Semiconductors-DPG30C400PB-Datasheet
DPG30C400PB
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 15Ax2; tube; Ifsm: 190A; TO220AB; 90W
Mounting: THT
Case: TO220AB
Kind of package: tube
Technology: HiPerFRED™ 2nd Gen
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Type of diode: rectifying
Reverse recovery time: 45ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 1.39V
Max. forward impulse current: 190A
Load current: 15A x2
Power dissipation: 90W
Max. off-state voltage: 0.4kV
на замовлення 83 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+216.97 грн
10+178.61 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
MD16110A-DKM2MM littelfuse_power_semiconductor_rectifier_module_circuit_package_a_datasheet.pdf?assetguid=7ed5c66f-3580-4b5e-91ee-69f455430ce8
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 110A; package A
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Case: package A
Electrical mounting: screw
Max. forward voltage: 1.6V
Load current: 110A
Max. load current: 170A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 2.5kA
товару немає в наявності
В кошику  од. на суму  грн.
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