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IXXH30N60B3 IXXH30N60B3 IXYS IXXH30N60B3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
Collector current: 30A
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Collector-emitter voltage: 600V
на замовлення 247 шт:
термін постачання 21-30 дні (днів)
1+445.52 грн
3+372.65 грн
10+329.18 грн
30+295.38 грн
В кошику  од. на суму  грн.
IXBH16N170 IXBH16N170 IXYS IXBH16N170_IXBT16N170.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-on time: 220ns
Gate charge: 72nC
Turn-off time: 940ns
Collector current: 16A
Technology: BiMOSFET™; FRED
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Power dissipation: 250W
Features of semiconductor devices: high voltage
Collector-emitter voltage: 1.7kV
Type of transistor: IGBT
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
1+987.24 грн
5+841.88 грн
10+767.02 грн
30+628.59 грн
В кошику  од. на суму  грн.
IXBH16N170A IXBH16N170A IXYS IXBH(T)16N170A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
Collector current: 10A
Technology: BiMOSFET™
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Features of semiconductor devices: high voltage
Collector-emitter voltage: 1.7kV
Type of transistor: IGBT
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CPC1035N CPC1035N IXYS cpc1035n.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 1248 шт:
термін постачання 21-30 дні (днів)
3+206.29 грн
100+159.36 грн
500+127.17 грн
Мінімальне замовлення: 3
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CPC1035NTR CPC1035NTR IXYS CPC1035N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXTK90P20P IXTK90P20P IXYS IXTK90P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: TO264
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
1+1389.42 грн
5+1104.26 грн
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IX4427N IX4427N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
на замовлення 1759 шт:
термін постачання 21-30 дні (днів)
7+65.87 грн
10+43.22 грн
25+38.79 грн
50+38.71 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IXGX120N120A3 IXGX120N120A3 IXYS IXGK(x)120N120A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
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IXGX120N120B3 IXGX120N120B3 IXYS IXGK(x)120N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
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IXGX120N60A3 IXGX120N60A3 IXYS IXGX120N60A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 120A; 780W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 780W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 450nC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 830ns
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IXFH24N90P IXFH24N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A91EFCA0BC18BF&compId=IXF_24N90P.pdf?ci_sign=ded22da81efa882da3bdd9c405eb3c907c0bbe1a Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 24A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Case: TO247-3
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 130nC
Power dissipation: 660W
на замовлення 231 шт:
термін постачання 21-30 дні (днів)
1+766.22 грн
В кошику  од. на суму  грн.
IXFR24N90P IXFR24N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BA3820&compId=IXFR24N90P.pdf?ci_sign=febc9fbf8a1d0a0967afdd75b7308ccc013f92ca Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Case: ISOPLUS247™
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 130nC
Power dissipation: 230W
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IXFT24N90P IXFT24N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A91EFCA0BC18BF&compId=IXF_24N90P.pdf?ci_sign=ded22da81efa882da3bdd9c405eb3c907c0bbe1a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 24A; 660W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Gate charge: 130nC
Reverse recovery time: 300ns
Power dissipation: 660W
на замовлення 251 шт:
термін постачання 21-30 дні (днів)
1+901.44 грн
3+791.98 грн
10+740.46 грн
30+739.66 грн
В кошику  од. на суму  грн.
IXYH24N90C3 IXYH24N90C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA92C1B3741820&compId=IXYH24N90C3.pdf?ci_sign=a3210f329aa58bbd5bf982e341cb338473fca19c Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Gate charge: 40nC
Turn-on time: 60ns
Turn-off time: 215ns
Power dissipation: 240W
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 110A
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IXYH24N90C3D1 IXYH24N90C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA97DAECAD7820&compId=IXYH24N90C3D1.pdf?ci_sign=ca29c942f115c50325f8dbffd194b5d9e5781706 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Gate charge: 40nC
Turn-on time: 60ns
Turn-off time: 215ns
Power dissipation: 200W
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 105A
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IXGH40N120A2 IXGH40N120A2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACDC24CE18D820&compId=IXGH(T)40N120A2.pdf?ci_sign=203d3ce5808c7efb2301acda4bb7953fc1c64a9b Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Technology: PT
Power dissipation: 360W
Case: TO247-3
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 55ns
Turn-off time: 2.3µs
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
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IXGH40N120B2D1 IXGH40N120B2D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACE7B86DFC1820&compId=IXGH40N120B2D1.pdf?ci_sign=f69cd0ee46700a68335dcbe7633483cd24211c52 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 79ns
Turn-off time: 770ns
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
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IXGH40N120C3 IXGH40N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACF007F4611820&compId=IXGH40N120C3.pdf?ci_sign=714914cb8f64354bd66f866a923e86117151cff6 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 52ns
Turn-off time: 475ns
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
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IXGH40N120C3D1 IXGH40N120C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACF2BC4DE99820&compId=IXGH40N120C3D1.pdf?ci_sign=9086ec5b6a009987b2652c18dc4656beb34eaf8b Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 52ns
Turn-off time: 475ns
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
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IXYH40N120B3 IXYH40N120B3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F15467A0893820&compId=IXYH40N120B3.pdf?ci_sign=eaed52837b02635a2925168fde86e30166533444 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 84ns
Turn-off time: 411ns
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
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IXYH40N120B3D1 IXYH40N120B3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1507CF8D1F820&compId=IXYH40N120B3D1.pdf?ci_sign=d60e3ab08bf49be7d3dfc3b325aefe29f3f2b44d Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 84ns
Turn-off time: 411ns
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
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IXYH40N120C3 IXYH40N120C3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD0BA43A8E1820&compId=IXYH40N120C3.pdf?ci_sign=d79e6ffef17f7d8267b0b10291f7f554f8589b2f Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
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IXYH40N120C3D1 IXYH40N120C3D1 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD0DE5CF7D5820&compId=IXYH40N120C3D1.pdf?ci_sign=883141e607d231e491ef121948348a81288777e2 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
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IXFH12N90P IXFH12N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28565D40F6B3820&compId=IXFH(V)12N90P_S.pdf?ci_sign=6423cc2416d7c4bd0c10fe3e39ba843736b680a7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Polarisation: unipolar
Gate charge: 56nC
On-state resistance: 1Ω
Drain current: 12A
Power dissipation: 380W
Drain-source voltage: 900V
Case: TO247-3
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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IXTA20N65X IXTA20N65X IXYS IXTA(H,P)20N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Reverse recovery time: 0.35µs
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IXTA20N65X2 IXTA20N65X2 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 27nC
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
2+362.31 грн
3+302.62 грн
10+267.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTH20N65X IXTH20N65X IXYS IXTA(H,P)20N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Reverse recovery time: 0.35µs
на замовлення 251 шт:
термін постачання 21-30 дні (днів)
1+630.14 грн
10+519.94 грн
30+480.50 грн
120+428.99 грн
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IXTH20N65X2 IXTH20N65X2 IXYS IXTA(H,P)20N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Reverse recovery time: 0.35µs
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IXTP20N65X IXTP20N65X IXYS IXTA(H,P)20N65X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Reverse recovery time: 0.35µs
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IXTP20N65X2 IXTP20N65X2 IXYS IXTA(H,P)20N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Reverse recovery time: 0.35µs
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IXYH50N65C3H1 IXYH50N65C3H1 IXYS IXYH50N65C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 142ns
Technology: GenX3™; Planar; XPT™
на замовлення 142 шт:
термін постачання 21-30 дні (днів)
1+750.62 грн
3+626.98 грн
10+554.54 грн
30+497.40 грн
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IXFH15N100P IXFH15N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC0CF820&compId=IXFH15N100P.pdf?ci_sign=94fa2e42718d2c8307aa8b264bf50b1dc784944c Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 248 шт:
термін постачання 21-30 дні (днів)
1+846.83 грн
3+702.64 грн
10+621.35 грн
30+557.76 грн
В кошику  од. на суму  грн.
IXFH15N100Q3 IXFH15N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECE0AF857958BF&compId=IXF_15N100Q3.pdf?ci_sign=1dd331295c1d7ea0154eeba2040fc94c4aba0ac2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXFR15N100Q3 IXFR15N100Q3 IXYS IXFR15N100Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 64nC
On-state resistance: 1.2Ω
Drain current: 10A
Power dissipation: 400W
Drain-source voltage: 1kV
Kind of package: tube
Case: ISOPLUS247™
Kind of channel: enhancement
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
1+1327.88 грн
10+1062.41 грн
В кошику  од. на суму  грн.
IXFA7N80P IXFA7N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBCFAAAAC138BF&compId=IXFA7N80P_IXFP7N80P.pdf?ci_sign=6abb9f9c357a935dbd0c4341d202268591747dda Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
2+327.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP7N80P IXFP7N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBCFAAAAC138BF&compId=IXFA7N80P_IXFP7N80P.pdf?ci_sign=6abb9f9c357a935dbd0c4341d202268591747dda Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
3+198.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1907B CPC1907B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1A40C7&compId=CPC1907B.pdf?ci_sign=7769020ed6db2920200c882d1751093685dc103a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 6000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 60mΩ
Mounting: SMT
Case: SO8
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
2+420.38 грн
5+343.67 грн
10+317.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA24N60X IXFA24N60X IXYS IXFA(H,P,Q)24N60X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO263
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
2+396.11 грн
3+330.79 грн
10+292.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP24N60X IXFP24N60X IXYS IXFA(H,P,Q)24N60X.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
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CPC1004N CPC1004N IXYS CPC1004N.pdf Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 300mA
Switched voltage: max. 100V DC
Manufacturer series: OptoMOS
Relay variant: current source
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...110°C
Turn-off time: 1ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 4Ω
Insulation voltage: 1.5kV
Case: SOP4
Mounting: SMT
Kind of output: MOSFET
на замовлення 700 шт:
термін постачання 21-30 дні (днів)
4+117.01 грн
10+98.19 грн
100+89.34 грн
500+85.31 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFL44N100P IXFL44N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F95474BA39820&compId=IXFL44N100P.pdf?ci_sign=1c0e50a44c3371ebd3290c5eb1e4bc6fd4bc0c39 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 357W
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 305nC
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
1+962.98 грн
В кошику  од. на суму  грн.
IXFY4N60P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4n60p3_datasheet.pdf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 4A; Idm: 8A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 114W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
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DSA320A100NB DSA320A100NB IXYS Category: Diode modules
Description: Module: diode; quadruple,common anode; 100V; If: 80Ax4; SOT227B
Semiconductor structure: common anode; quadruple
Case: SOT227B
Max. off-state voltage: 100V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.77V
Load current: 80A x4
Max. load current: 320A
Type of semiconductor module: diode
Features of semiconductor devices: Schottky
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
1+2064.63 грн
3+1695.02 грн
В кошику  од. на суму  грн.
IXFK80N60P3 IXFK80N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D3F18CAC491820&compId=IXFK(X)80N60P3.pdf?ci_sign=4323adc90294e70e31e6954053047cba50e6737f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
1+1100.79 грн
10+853.14 грн
В кошику  од. на суму  грн.
IXFN80N60P3 IXFN80N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9D7CE511A5820&compId=IXFN80N60P3.pdf?ci_sign=8a40d9f6e2d287d4560f0df449c58f73299f151f Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Mechanical mounting: screw
Reverse recovery time: 250ns
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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IXFR80N60P3 IXFR80N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC627820&compId=IXFR80N60P3.pdf?ci_sign=e9b78ec09cf4552bf5bec18d9057ce9ca0bd8ebd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXFX80N60P3 IXFX80N60P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D3F18CAC491820&compId=IXFK(X)80N60P3.pdf?ci_sign=4323adc90294e70e31e6954053047cba50e6737f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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CPC1014N CPC1014N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9959065A1EB89F8BF&compId=cpc1014n.pdf?ci_sign=3aeb85f392fc7ce08ea820927771a3e31cc27ea4 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Case: SOP4
On-state resistance: 2Ω
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.4A
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Switched voltage: max. 60V AC; max. 60V DC
на замовлення 220 шт:
термін постачання 21-30 дні (днів)
4+123.08 грн
25+100.61 грн
50+91.75 грн
100+90.95 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC1016N CPC1016N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75420C7&compId=CPC1016N.pdf?ci_sign=476036b92a73b73fde3c51ebae6dcbccaa47872a Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Case: SOP4
On-state resistance: 16Ω
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.1A
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Switched voltage: max. 100V AC; max. 100V DC
на замовлення 737 шт:
термін постачання 21-30 дні (днів)
4+114.41 грн
25+91.75 грн
100+86.92 грн
500+86.12 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC1018N CPC1018N IXYS cpc1018n.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 0.8Ω
Insulation voltage: 1.5kV
Case: SOP4
Mounting: SMT
Kind of output: MOSFET
на замовлення 338 шт:
термін постачання 21-30 дні (днів)
3+185.49 грн
50+127.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1018NTR CPC1018NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A756C0C7&compId=CPC1018N.pdf?ci_sign=8de638cd4dfb67d338b1795a33a1de15a2c8f02d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 0.8Ω
Switched voltage: max. 60V DC; max. 600V AC
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
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CPC1019N CPC1019N IXYS CPC1019N.pdf Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 750mA
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 0.6Ω
Insulation voltage: 1.5kV
Case: SOP4
Mounting: SMT
Kind of output: MOSFET
на замовлення 296 шт:
термін постачання 21-30 дні (днів)
3+153.42 грн
10+117.51 грн
100+101.41 грн
Мінімальне замовлення: 3
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IXFA12N65X2 IXFA12N65X2 IXYS IXF_12N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18.5nC
Reverse recovery time: 155ns
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IXFP12N65X2 IXFP12N65X2 IXYS IXF_12N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18.5nC
Reverse recovery time: 155ns
на замовлення 233 шт:
термін постачання 21-30 дні (днів)
2+282.57 грн
10+162.58 грн
50+152.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP12N65X2M IXFP12N65X2M IXYS IXFP12N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18.5nC
Reverse recovery time: 155ns
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IXTA12N65X2 IXTA12N65X2 IXYS IXT_12N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
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IXTH12N65X2 IXTH12N65X2 IXYS IXT_12N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Reverse recovery time: 270ns
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IXTP12N65X2 IXTP12N65X2 IXYS IXT_12N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
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IXTP12N65X2M IXTP12N65X2M IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Pulsed drain current: 24A
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IXXP12N65B4D1 IXXP12N65B4D1 IXYS IXXP12N65B4D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 12A
Gate charge: 34nC
Pulsed collector current: 70A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Turn-on time: 44ns
Turn-off time: 245ns
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IXXH30N60B3 IXXH30N60B3-DTE.pdf
IXXH30N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 30A; 270W; TO247AD
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 270W
Case: TO247AD
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Turn-on time: 23ns
Turn-off time: 125ns
Collector current: 30A
Gate-emitter voltage: ±20V
Pulsed collector current: 115A
Collector-emitter voltage: 600V
на замовлення 247 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+445.52 грн
3+372.65 грн
10+329.18 грн
30+295.38 грн
В кошику  од. на суму  грн.
IXBH16N170 IXBH16N170_IXBT16N170.pdf
IXBH16N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 16A; 250W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-on time: 220ns
Gate charge: 72nC
Turn-off time: 940ns
Collector current: 16A
Technology: BiMOSFET™; FRED
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Power dissipation: 250W
Features of semiconductor devices: high voltage
Collector-emitter voltage: 1.7kV
Type of transistor: IGBT
на замовлення 43 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+987.24 грн
5+841.88 грн
10+767.02 грн
30+628.59 грн
В кошику  од. на суму  грн.
IXBH16N170A IXBH(T)16N170A.pdf
IXBH16N170A
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO247-3
Mounting: THT
Case: TO247-3
Kind of package: tube
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
Collector current: 10A
Technology: BiMOSFET™
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Features of semiconductor devices: high voltage
Collector-emitter voltage: 1.7kV
Type of transistor: IGBT
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CPC1035N cpc1035n.pdf
CPC1035N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 1248 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+206.29 грн
100+159.36 грн
500+127.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1035NTR CPC1035N.pdf
CPC1035NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 2ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXTK90P20P IXTK90P20P.pdf
IXTK90P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; TO264
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: TO264
Type of transistor: P-MOSFET
Mounting: THT
Technology: PolarP™
Kind of package: tube
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1389.42 грн
5+1104.26 грн
В кошику  од. на суму  грн.
IX4427N pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c
IX4427N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: tube
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
на замовлення 1759 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+65.87 грн
10+43.22 грн
25+38.79 грн
50+38.71 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IXGX120N120A3 IXGK(x)120N120A3.pdf
IXGX120N120A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 420nC
Kind of package: tube
Turn-on time: 105ns
Turn-off time: 1365ns
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IXGX120N120B3 IXGK(x)120N120B3.pdf
IXGX120N120B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 120A; 830W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 120A
Power dissipation: 830W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 370A
Mounting: THT
Gate charge: 470nC
Kind of package: tube
Turn-on time: 122ns
Turn-off time: 885ns
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IXGX120N60A3 IXGX120N60A3.pdf
IXGX120N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 120A; 780W; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 120A
Power dissipation: 780W
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Mounting: THT
Gate charge: 450nC
Kind of package: tube
Turn-on time: 123ns
Turn-off time: 830ns
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IXFH24N90P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A91EFCA0BC18BF&compId=IXF_24N90P.pdf?ci_sign=ded22da81efa882da3bdd9c405eb3c907c0bbe1a
IXFH24N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 24A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Case: TO247-3
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 130nC
Power dissipation: 660W
на замовлення 231 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+766.22 грн
В кошику  од. на суму  грн.
IXFR24N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6BA3820&compId=IXFR24N90P.pdf?ci_sign=febc9fbf8a1d0a0967afdd75b7308ccc013f92ca
IXFR24N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 13A; 230W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 13A
Case: ISOPLUS247™
On-state resistance: 0.46Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 130nC
Power dissipation: 230W
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IXFT24N90P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A91EFCA0BC18BF&compId=IXF_24N90P.pdf?ci_sign=ded22da81efa882da3bdd9c405eb3c907c0bbe1a
IXFT24N90P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 24A; 660W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 24A
Case: TO268
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Gate charge: 130nC
Reverse recovery time: 300ns
Power dissipation: 660W
на замовлення 251 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+901.44 грн
3+791.98 грн
10+740.46 грн
30+739.66 грн
В кошику  од. на суму  грн.
IXYH24N90C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA92C1B3741820&compId=IXYH24N90C3.pdf?ci_sign=a3210f329aa58bbd5bf982e341cb338473fca19c
IXYH24N90C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 240W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Gate charge: 40nC
Turn-on time: 60ns
Turn-off time: 215ns
Power dissipation: 240W
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 110A
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IXYH24N90C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAA97DAECAD7820&compId=IXYH24N90C3D1.pdf?ci_sign=ca29c942f115c50325f8dbffd194b5d9e5781706
IXYH24N90C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 24A; 200W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Gate charge: 40nC
Turn-on time: 60ns
Turn-off time: 215ns
Power dissipation: 200W
Gate-emitter voltage: ±20V
Collector current: 24A
Pulsed collector current: 105A
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IXGH40N120A2 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACDC24CE18D820&compId=IXGH(T)40N120A2.pdf?ci_sign=203d3ce5808c7efb2301acda4bb7953fc1c64a9b
IXGH40N120A2
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 1.2kV; 40A; 360W; TO247-3
Type of transistor: IGBT
Technology: PT
Power dissipation: 360W
Case: TO247-3
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 55ns
Turn-off time: 2.3µs
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
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IXGH40N120B2D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACE7B86DFC1820&compId=IXGH40N120B2D1.pdf?ci_sign=f69cd0ee46700a68335dcbe7633483cd24211c52
IXGH40N120B2D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 138nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 79ns
Turn-off time: 770ns
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
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IXGH40N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACF007F4611820&compId=IXGH40N120C3.pdf?ci_sign=714914cb8f64354bd66f866a923e86117151cff6
IXGH40N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 52ns
Turn-off time: 475ns
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
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IXGH40N120C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DACF2BC4DE99820&compId=IXGH40N120C3D1.pdf?ci_sign=9086ec5b6a009987b2652c18dc4656beb34eaf8b
IXGH40N120C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 380W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 380W
Case: TO247-3
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 52ns
Turn-off time: 475ns
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
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IXYH40N120B3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F15467A0893820&compId=IXYH40N120B3.pdf?ci_sign=eaed52837b02635a2925168fde86e30166533444
IXYH40N120B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 84ns
Turn-off time: 411ns
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
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IXYH40N120B3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F1507CF8D1F820&compId=IXYH40N120B3D1.pdf?ci_sign=d60e3ab08bf49be7d3dfc3b325aefe29f3f2b44d
IXYH40N120B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 84ns
Turn-off time: 411ns
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
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IXYH40N120C3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD0BA43A8E1820&compId=IXYH40N120C3.pdf?ci_sign=d79e6ffef17f7d8267b0b10291f7f554f8589b2f
IXYH40N120C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 577W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 577W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Pulsed collector current: 175A
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IXYH40N120C3D1 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAD0DE5CF7D5820&compId=IXYH40N120C3D1.pdf?ci_sign=883141e607d231e491ef121948348a81288777e2
IXYH40N120C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 40A; 480W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 480W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 95ns
Turn-off time: 303ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
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IXFH12N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28565D40F6B3820&compId=IXFH(V)12N90P_S.pdf?ci_sign=6423cc2416d7c4bd0c10fe3e39ba843736b680a7
IXFH12N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Polarisation: unipolar
Gate charge: 56nC
On-state resistance: 1Ω
Drain current: 12A
Power dissipation: 380W
Drain-source voltage: 900V
Case: TO247-3
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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IXTA20N65X IXTA(H,P)20N65X.pdf
IXTA20N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Reverse recovery time: 0.35µs
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IXTA20N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixt_20n65x2_datasheet.pdf.pdf
IXTA20N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 27nC
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+362.31 грн
3+302.62 грн
10+267.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTH20N65X IXTA(H,P)20N65X.pdf
IXTH20N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO247-3
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Reverse recovery time: 0.35µs
на замовлення 251 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+630.14 грн
10+519.94 грн
30+480.50 грн
120+428.99 грн
В кошику  од. на суму  грн.
IXTH20N65X2 IXTA(H,P)20N65X2.pdf
IXTH20N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO247-3; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO247-3
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Reverse recovery time: 0.35µs
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IXTP20N65X IXTA(H,P)20N65X.pdf
IXTP20N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 320W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 35nC
Reverse recovery time: 0.35µs
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В кошику  од. на суму  грн.
IXTP20N65X2 IXTA(H,P)20N65X2.pdf
IXTP20N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 290W; TO220AB; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: TO220AB
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Reverse recovery time: 0.35µs
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В кошику  од. на суму  грн.
IXYH50N65C3H1 IXYH50N65C3H1.pdf
IXYH50N65C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Turn-on time: 56ns
Turn-off time: 142ns
Technology: GenX3™; Planar; XPT™
на замовлення 142 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+750.62 грн
3+626.98 грн
10+554.54 грн
30+497.40 грн
В кошику  од. на суму  грн.
IXFH15N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F947DBC0CF820&compId=IXFH15N100P.pdf?ci_sign=94fa2e42718d2c8307aa8b264bf50b1dc784944c
IXFH15N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 15A; 543W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 543W
Case: TO247-3
On-state resistance: 760mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 248 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+846.83 грн
3+702.64 грн
10+621.35 грн
30+557.76 грн
В кошику  од. на суму  грн.
IXFH15N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECE0AF857958BF&compId=IXF_15N100Q3.pdf?ci_sign=1dd331295c1d7ea0154eeba2040fc94c4aba0ac2
IXFH15N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 1kV; 15A; 690W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 1.05Ω
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXFR15N100Q3 IXFR15N100Q3.pdf
IXFR15N100Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 10A; 400W; ISOPLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 64nC
On-state resistance: 1.2Ω
Drain current: 10A
Power dissipation: 400W
Drain-source voltage: 1kV
Kind of package: tube
Case: ISOPLUS247™
Kind of channel: enhancement
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1327.88 грн
10+1062.41 грн
В кошику  од. на суму  грн.
IXFA7N80P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBCFAAAAC138BF&compId=IXFA7N80P_IXFP7N80P.pdf?ci_sign=6abb9f9c357a935dbd0c4341d202268591747dda
IXFA7N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+327.64 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP7N80P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBCFAAAAC138BF&compId=IXFA7N80P_IXFP7N80P.pdf?ci_sign=6abb9f9c357a935dbd0c4341d202268591747dda
IXFP7N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+198.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1907B pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1A40C7&compId=CPC1907B.pdf?ci_sign=7769020ed6db2920200c882d1751093685dc103a
CPC1907B
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 6000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 60mΩ
Mounting: SMT
Case: SO8
Body dimensions: 21.08x16.76x3.3mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 1ms
Operating temperature: -40...85°C
Kind of output: MOSFET
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+420.38 грн
5+343.67 грн
10+317.11 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA24N60X IXFA(H,P,Q)24N60X.pdf
IXFA24N60X
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO263; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO263
On-state resistance: 0.175Ω
Mounting: SMD
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+396.11 грн
3+330.79 грн
10+292.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP24N60X IXFA(H,P,Q)24N60X.pdf
IXFP24N60X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 400W; TO220AB; 140ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 400W
Case: TO220AB
On-state resistance: 0.175Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 140ns
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CPC1004N CPC1004N.pdf
CPC1004N
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 300mA; max.100VDC; SMT; SOP4; OptoMOS; 4Ω; 1.5kV
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 300mA
Switched voltage: max. 100V DC
Manufacturer series: OptoMOS
Relay variant: current source
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...110°C
Turn-off time: 1ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 4Ω
Insulation voltage: 1.5kV
Case: SOP4
Mounting: SMT
Kind of output: MOSFET
на замовлення 700 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+117.01 грн
10+98.19 грн
100+89.34 грн
500+85.31 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXFL44N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F95474BA39820&compId=IXFL44N100P.pdf?ci_sign=1c0e50a44c3371ebd3290c5eb1e4bc6fd4bc0c39
IXFL44N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 357W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 357W
Case: ISOPLUS264™
On-state resistance: 0.24Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 305nC
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+962.98 грн
В кошику  од. на суму  грн.
IXFY4N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_4n60p3_datasheet.pdf.pdf
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 4A; Idm: 8A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 114W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.4Ω
Mounting: SMD
Gate charge: 6.9nC
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Reverse recovery time: 250ns
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DSA320A100NB
DSA320A100NB
Виробник: IXYS
Category: Diode modules
Description: Module: diode; quadruple,common anode; 100V; If: 80Ax4; SOT227B
Semiconductor structure: common anode; quadruple
Case: SOT227B
Max. off-state voltage: 100V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 0.77V
Load current: 80A x4
Max. load current: 320A
Type of semiconductor module: diode
Features of semiconductor devices: Schottky
на замовлення 3 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2064.63 грн
3+1695.02 грн
В кошику  од. на суму  грн.
IXFK80N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D3F18CAC491820&compId=IXFK(X)80N60P3.pdf?ci_sign=4323adc90294e70e31e6954053047cba50e6737f
IXFK80N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1100.79 грн
10+853.14 грн
В кошику  од. на суму  грн.
IXFN80N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9D7CE511A5820&compId=IXFN80N60P3.pdf?ci_sign=8a40d9f6e2d287d4560f0df449c58f73299f151f
IXFN80N60P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhancement
Mechanical mounting: screw
Reverse recovery time: 250ns
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
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В кошику  од. на суму  грн.
IXFR80N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC627820&compId=IXFR80N60P3.pdf?ci_sign=e9b78ec09cf4552bf5bec18d9057ce9ca0bd8ebd
IXFR80N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 48A; 540W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 48A
Power dissipation: 540W
Case: ISOPLUS247™
On-state resistance: 85mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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IXFX80N60P3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D3F18CAC491820&compId=IXFK(X)80N60P3.pdf?ci_sign=4323adc90294e70e31e6954053047cba50e6737f
IXFX80N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
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CPC1014N pVersion=0046&contRep=ZT&docId=005056AB82531EE9959065A1EB89F8BF&compId=cpc1014n.pdf?ci_sign=3aeb85f392fc7ce08ea820927771a3e31cc27ea4
CPC1014N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 400mA; max.60VAC
Case: SOP4
On-state resistance: 2Ω
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.4A
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Switched voltage: max. 60V AC; max. 60V DC
на замовлення 220 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+123.08 грн
25+100.61 грн
50+91.75 грн
100+90.95 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC1016N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75420C7&compId=CPC1016N.pdf?ci_sign=476036b92a73b73fde3c51ebae6dcbccaa47872a
CPC1016N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.100VAC
Case: SOP4
On-state resistance: 16Ω
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.1A
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Switched voltage: max. 100V AC; max. 100V DC
на замовлення 737 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+114.41 грн
25+91.75 грн
100+86.92 грн
500+86.12 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC1018N cpc1018n.pdf
CPC1018N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 0.8Ω
Insulation voltage: 1.5kV
Case: SOP4
Mounting: SMT
Kind of output: MOSFET
на замовлення 338 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+185.49 грн
50+127.17 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1018NTR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A756C0C7&compId=CPC1018N.pdf?ci_sign=8de638cd4dfb67d338b1795a33a1de15a2c8f02d
CPC1018NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 600mA; max.600VAC
Manufacturer series: OptoMOS
Mounting: SMT
Type of relay: solid state
Case: SOP4
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 2ms
Turn-on time: 3ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 0.6A
On-state resistance: 0.8Ω
Switched voltage: max. 60V DC; max. 600V AC
Relay variant: 1-phase; current source
Insulation voltage: 1.5kV
Kind of output: MOSFET
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CPC1019N CPC1019N.pdf
CPC1019N
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 750mA; max.60VDC; SMT; SOP4; OptoMOS; t(on): 3ms
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 750mA
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Body dimensions: 4.09x3.81x2.03mm
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
On-state resistance: 0.6Ω
Insulation voltage: 1.5kV
Case: SOP4
Mounting: SMT
Kind of output: MOSFET
на замовлення 296 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+153.42 грн
10+117.51 грн
100+101.41 грн
Мінімальне замовлення: 3
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IXFA12N65X2 IXF_12N65X2.pdf
IXFA12N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18.5nC
Reverse recovery time: 155ns
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IXFP12N65X2 IXF_12N65X2.pdf
IXFP12N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18.5nC
Reverse recovery time: 155ns
на замовлення 233 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+282.57 грн
10+162.58 грн
50+152.12 грн
Мінімальне замовлення: 2
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IXFP12N65X2M IXFP12N65X2M.pdf
IXFP12N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 40W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.31Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 18.5nC
Reverse recovery time: 155ns
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IXTA12N65X2 IXT_12N65X2.pdf
IXTA12N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO263
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
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IXTH12N65X2 IXT_12N65X2.pdf
IXTH12N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 12A; 180W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Reverse recovery time: 270ns
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IXTP12N65X2 IXT_12N65X2.pdf
IXTP12N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO220AB; 270ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 180W
Case: TO220AB
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 270ns
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IXTP12N65X2M ixty2n65x2.pdf
IXTP12N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 24A; 40W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 17.7nC
Pulsed drain current: 24A
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IXXP12N65B4D1 IXXP12N65B4D1.pdf
IXXP12N65B4D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 12A; 160W; TO220-3
Type of transistor: IGBT
Technology: GenX4™; Trench; XPT™
Power dissipation: 160W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 12A
Gate charge: 34nC
Pulsed collector current: 70A
Collector-emitter voltage: 650V
Gate-emitter voltage: ±20V
Turn-on time: 44ns
Turn-off time: 245ns
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