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IXTP120N04T2 IXTP120N04T2 IXYS IXTA(P)120N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Reverse recovery time: 35ns
Mounting: THT
Power dissipation: 200W
Gate charge: 58nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 6.1mΩ
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IXTP120N075T2 IXTP120N075T2 IXYS IXTA(P)120N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Reverse recovery time: 50ns
Mounting: THT
Power dissipation: 250W
Gate charge: 78nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 7.7mΩ
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IXTP12N70X2M IXTP12N70X2M IXYS ixty2n65x2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
Drain current: 12A
Drain-source voltage: 700V
Gate charge: 19nC
On-state resistance: 0.3Ω
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 40W
Kind of channel: enhancement
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IXGF25N250 IXYS littelfuse_discrete_igbts_npt_ixgf25n250_datasheet.pdf.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 2.5kV; 30A; 114W; i4-pac
Type of transistor: IGBT
Collector-emitter voltage: 2.5kV
Collector current: 30A
Power dissipation: 114W
Case: i4-pac
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
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 Мінімальне замовлення: 300 шт
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IXCP10M90S IXCP10M90S IXYS IXCP10M90S.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
на замовлення 175 шт:
термін постачання 14-30 дні (днів)
2+284.83 грн
10+203.96 грн
Мінімальне замовлення: 2 шт
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IXCY10M90S IXCY10M90S IXYS IXCP10M90S.pdf Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
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IXCY10M90S-TRL IXYS littelfuse-power-semi-ixcp10m90s-ixcy10m90s?assetguid=c96aeca6-1b81-4b5d-af9f-6cbd5216c35e Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
товару немає в наявності
 Мінімальне замовлення: 2500 шт
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IXGN320N60A3 IXGN320N60A3 IXYS IXGN320N60A3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 170A
Pulsed collector current: 1.2kA
Power dissipation: 735W
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXGN100N170 IXGN100N170 IXYS IXGN100N170.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Features of semiconductor devices: high voltage
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 95A
Pulsed collector current: 600A
Power dissipation: 735W
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
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IXGN400N60A3 IXGN400N60A3 IXYS IXGN400N60A3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 190A
Pulsed collector current: 800A
Power dissipation: 830W
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
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IXGN400N60B3 IXGN400N60B3 IXYS IXGN400N60B3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.5kA
Power dissipation: 1kW
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
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IXGN200N170 IXGN200N170 IXYS IXGN200N170.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1.05kA
Power dissipation: 1.25kW
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
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IXGN82N120C3H1 IXYS Category: IGBT modules
Description: Module: IGBT; Ic: 130A; SOT227B; tube
Case: SOT227B
Kind of package: tube
Type of semiconductor module: IGBT
Collector current: 130A
товару немає в наявності
 Мінімальне замовлення: 300 шт
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IXTP140P05T IXTP140P05T IXYS IXT_140P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -50V
Drain current: -140A
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Gate-source voltage: ±15V
на замовлення 211 шт:
термін постачання 14-30 дні (днів)
1+535.74 грн
5+421.19 грн
50+361.50 грн
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IXTH140P05T IXTH140P05T IXYS IXT_140P05T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -50V
Drain current: -140A
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Gate-source voltage: ±15V
на замовлення 56 шт:
термін постачання 14-30 дні (днів)
1+672.35 грн
3+572.09 грн
10+479.23 грн
30+463.48 грн
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IXTH140P10T IXTH140P10T IXYS IXT_140P10T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 568W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -100V
Drain current: -140A
Reverse recovery time: 130ns
Gate charge: 400nC
On-state resistance: 10mΩ
Gate-source voltage: ±15V
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
1+1214.34 грн
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PAA140P PAA140P IXYS PAA140.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
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PAA140PTR IXYS PAA140.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
товару немає в наявності
 Мінімальне замовлення: 1000 шт
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MCMA140PD1600TB MCMA140PD1600TB IXYS MCMA140PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.28V
Load current: 140A
Max. load current: 220A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 33 шт:
термін постачання 14-30 дні (днів)
1+3313.54 грн
6+2736.92 грн
10+2724.49 грн
В кошику  од. на суму  грн.
IXTA140P05T IXTA140P05T IXYS IXT_140P05T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain current: -140A
Drain-source voltage: -50V
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
Kind of package: tube
Case: TO263
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IXTT140P10T IXTT140P10T IXYS IXT_140P10T.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; TO268
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain current: -140A
Drain-source voltage: -100V
Reverse recovery time: 130ns
Gate charge: 400nC
On-state resistance: 10mΩ
Power dissipation: 568W
Gate-source voltage: ±15V
Kind of package: tube
Case: TO268
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MDMA140P1600TG IXYS MDMA140P1600TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Load current: 140A
Max. forward voltage: 1.11V
Max. forward impulse current: 2.38kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
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MCMA140P1800TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Load current: 140A
Gate current: 150/200mA
Max. forward voltage: 1.7V
Max. off-state voltage: 1.8kV
Kind of package: bulk
Case: TO240AA
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IXTA140P05T-TRL IXYS Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 298W; D2PAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Power dissipation: 298W
Gate-source voltage: 15V
Case: D2PAK
товару немає в наявності
 Мінімальне замовлення: 800 шт
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IXTH200N10T IXTH200N10T IXYS IXTH(Q)200N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO247-3
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
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IXFX200N10P IXFX200N10P IXYS IXFK(X)200N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
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IXTK120P20T IXTK120P20T IXYS IXT_120P20T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate-source voltage: ±15V
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
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IXTK102N65X2 IXTK102N65X2 IXYS IXTK(X)102N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Kind of channel: enhancement
Mounting: THT
Case: TO264
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 450ns
On-state resistance: 30mΩ
Drain current: 102A
Drain-source voltage: 650V
Power dissipation: 1.04kW
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IXTX102N65X2 IXTX102N65X2 IXYS IXTK(X)102N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Kind of channel: enhancement
Mounting: THT
Case: PLUS247™
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 450ns
On-state resistance: 30mΩ
Drain current: 102A
Drain-source voltage: 650V
Power dissipation: 1.04kW
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IXTN102N65X2 IXTN102N65X2 IXYS IXTN102N65X2.pdf Category: Transistor drivers
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: X2-Class
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 450ns
On-state resistance: 30mΩ
Gate-source voltage: ±40V
Drain current: 76A
Drain-source voltage: 650V
Pulsed drain current: 204A
Power dissipation: 595W
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IXTN120P20T IXTN120P20T IXYS IXTN120P20T.pdf Category: Transistor drivers
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -400A
Drain-source voltage: -200V
Drain current: -106A
Gate-source voltage: ±15V
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Power dissipation: 830W
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IXYP35N65C5 IXYS Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYP35N65C5Datasheet.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 326W; TO220-3
Type of transistor: IGBT
Power dissipation: 326W
Case: TO220-3
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Collector-emitter voltage: 650V
товару немає в наявності
 Мінімальне замовлення: 300 шт
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DHG60I600HA DHG60I600HA IXYS DHG60I600HA.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 430A; TO247-2; 415W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 430A
Case: TO247-2
Max. forward voltage: 2.41V
Power dissipation: 415W
Reverse recovery time: 35ns
Technology: Sonic FRD™
товару немає в наявності
 Мінімальне замовлення: 300 шт
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DSA15IM200UC DSA15IM200UC IXYS DSA15IM200UC.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
на замовлення 1498 шт:
термін постачання 14-30 дні (днів)
4+113.40 грн
6+80.42 грн
25+71.30 грн
100+64.67 грн
Мінімальне замовлення: 4 шт
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DSS6-0025BS DSS6-0025BS IXYS DSS6-0025BS.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 25V; 6A; reel,tape; 40W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 25V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Max. forward impulse current: 120A
Kind of package: reel; tape
Power dissipation: 40W
на замовлення 546 шт:
термін постачання 14-30 дні (днів)
9+54.47 грн
12+36.48 грн
100+31.84 грн
250+29.85 грн
500+28.52 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
LCB110 LCB110 IXYS LCB110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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CPC1225N CPC1225N IXYS CPC1225N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Case: SOP4
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
Body dimensions: 4.09x3.81x2.03mm
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
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В кошику  од. на суму  грн.
LCB111 LCB111 IXYS LCB111.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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В кошику  од. на суму  грн.
LCB110S LCB110S IXYS LCB110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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В кошику  од. на суму  грн.
LAA100L LAA100L IXYS LAA100L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
1+571.45 грн
50+439.43 грн
100+381.39 грн
В кошику  од. на суму  грн.
LAA100 LAA100 IXYS LAA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
1+701.82 грн
10+570.43 грн
250+461.82 грн
В кошику  од. на суму  грн.
LAA100P LAA100P IXYS LAA100.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
1+592.88 грн
В кошику  од. на суму  грн.
IXFH120N30X3 IXFH120N30X3 IXYS IXF_120N30X3_HV.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
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IXTP2N65X2 IXTP2N65X2 IXYS IXTP(Y)2N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Gate charge: 4.3nC
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IXTH62N65X2 IXTH62N65X2 IXYS IXTH62N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 445ns
Gate charge: 0.1µC
Features of semiconductor devices: ultra junction x-class
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DSEI30-06A DSEI30-06A IXYS DSEI30-06A.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
2+337.52 грн
3+271.95 грн
5+257.03 грн
10+252.05 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
MD16200S-DKM2MM IXYS littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf?assetguid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8 Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Max. load current: 310A
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MDMA210P1600YD IXYS MDMA210P1600YD.pdf PCN241015_Y4-M6 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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В кошику  од. на суму  грн.
LCA110 LCA110 IXYS LCA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LCA110S LCA110S IXYS lca110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LCA110L LCA110L IXYS LCA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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В кошику  од. на суму  грн.
LCA110LSTR IXYS LCA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCA110STR IXYS LCA110.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCA110LS LCA110LS IXYS LCA110L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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DSEK60-06A DSEK60-06A IXYS DSEK60-06A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 300A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-3
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 183 шт:
термін постачання 14-30 дні (днів)
2+398.23 грн
5+361.50 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEK60-12A DSEK60-12A IXYS mc557.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26Ax2; tube; Ifsm: 200A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.55V
Power dissipation: 125W
Reverse recovery time: 40ns
Technology: FRED
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
1+472.34 грн
В кошику  од. на суму  грн.
IXTR40P50P IXTR40P50P IXYS IXTR40P50P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 312W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -22A
Reverse recovery time: 477ns
Gate charge: 205nC
On-state resistance: 0.26Ω
Gate-source voltage: ±20V
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
1+1125.05 грн
3+930.27 грн
10+825.80 грн
В кошику  од. на суму  грн.
IXTQ82N25P IXTQ82N25P IXYS IXTK82N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 82A
Power dissipation: 500W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 262 шт:
термін постачання 14-30 дні (днів)
1+644.67 грн
5+504.10 грн
10+446.90 грн
30+430.31 грн
В кошику  од. на суму  грн.
IXFB100N50P IXFB100N50P IXYS IXFB100N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 49mΩ
Gate-source voltage: ±30V
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1890W
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IXFB100N50Q3 IXFB100N50Q3 IXYS IXFB100N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 49mΩ
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1.56kW
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IXTP120N04T2 IXTA(P)120N04T2.pdf
IXTP120N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 200W; TO220AB; 35ns
Reverse recovery time: 35ns
Mounting: THT
Power dissipation: 200W
Gate charge: 58nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 6.1mΩ
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IXTP120N075T2 IXTA(P)120N075T2.pdf
IXTP120N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 120A; 250W; TO220AB; 50ns
Reverse recovery time: 50ns
Mounting: THT
Power dissipation: 250W
Gate charge: 78nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 7.7mΩ
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IXTP12N70X2M ixty2n65x2.pdf
IXTP12N70X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 12A; Idm: 24A; 40W; TO220FP
Mounting: THT
Type of transistor: N-MOSFET
Case: TO220FP
Kind of package: tube
Polarisation: unipolar
Drain current: 12A
Drain-source voltage: 700V
Gate charge: 19nC
On-state resistance: 0.3Ω
Gate-source voltage: ±30V
Pulsed drain current: 24A
Power dissipation: 40W
Kind of channel: enhancement
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IXGF25N250 littelfuse_discrete_igbts_npt_ixgf25n250_datasheet.pdf.pdf
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; 2.5kV; 30A; 114W; i4-pac
Type of transistor: IGBT
Collector-emitter voltage: 2.5kV
Collector current: 30A
Power dissipation: 114W
Case: i4-pac
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 75nC
Kind of package: tube
товару немає в наявності
Мінімальне замовлення: 300 шт
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IXCP10M90S IXCP10M90S.pdf
IXCP10M90S
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO220AB; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO220AB
Mounting: THT
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
на замовлення 175 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+284.83 грн
10+203.96 грн
Мінімальне замовлення: 2 шт
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IXCY10M90S IXCP10M90S.pdf
IXCY10M90S
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
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IXCY10M90S-TRL littelfuse-power-semi-ixcp10m90s-ixcy10m90s?assetguid=c96aeca6-1b81-4b5d-af9f-6cbd5216c35e
Виробник: IXYS
Category: Integrated circuits - others
Description: IC: driver; current regulator; TO252; 900VDC; 40W; 2÷100mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator
Case: TO252
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 900V DC
Power dissipation: 40W
Operating current: 2...100mA
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
IXGN320N60A3 IXGN320N60A3.pdf
IXGN320N60A3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 170A
Pulsed collector current: 1.2kA
Power dissipation: 735W
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXGN100N170 IXGN100N170.pdf
IXGN100N170
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 95A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Features of semiconductor devices: high voltage
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 95A
Pulsed collector current: 600A
Power dissipation: 735W
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
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IXGN400N60A3 IXGN400N60A3.pdf
IXGN400N60A3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 190A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 190A
Pulsed collector current: 800A
Power dissipation: 830W
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
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IXGN400N60B3 IXGN400N60B3.pdf
IXGN400N60B3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 200A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: GenX3™; PT
Gate-emitter voltage: ±20V
Collector current: 200A
Pulsed collector current: 1.5kA
Power dissipation: 1kW
Semiconductor structure: single transistor
Max. off-state voltage: 0.6kV
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IXGN200N170 IXGN200N170.pdf
IXGN200N170
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 160A; SOT227B
Case: SOT227B
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: IGBT
Technology: NPT
Gate-emitter voltage: ±20V
Collector current: 160A
Pulsed collector current: 1.05kA
Power dissipation: 1.25kW
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
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IXGN82N120C3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; Ic: 130A; SOT227B; tube
Case: SOT227B
Kind of package: tube
Type of semiconductor module: IGBT
Collector current: 130A
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTP140P05T IXT_140P05T.pdf
IXTP140P05T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -50V
Drain current: -140A
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Gate-source voltage: ±15V
на замовлення 211 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+535.74 грн
5+421.19 грн
50+361.50 грн
В кошику  од. на суму  грн.
IXTH140P05T IXT_140P05T.pdf
IXTH140P05T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; 53ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 298W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -50V
Drain current: -140A
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Gate-source voltage: ±15V
на замовлення 56 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+672.35 грн
3+572.09 грн
10+479.23 грн
30+463.48 грн
В кошику  од. на суму  грн.
IXTH140P10T IXT_140P10T.pdf
IXTH140P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; 130ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 568W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: TrenchP™
Drain-source voltage: -100V
Drain current: -140A
Reverse recovery time: 130ns
Gate charge: 400nC
On-state resistance: 10mΩ
Gate-source voltage: ±15V
на замовлення 2 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1214.34 грн
В кошику  од. на суму  грн.
PAA140P PAA140.pdf
PAA140P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
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PAA140PTR PAA140.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Type of relay: solid state
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
Turn-on time: 3ms
Case: DIP8
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
MCMA140PD1600TB MCMA140PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCMA140PD1600TB
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 140A; TO240AA; Ufmax: 1.28V; bulk
Case: TO240AA
Kind of package: bulk
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.85V
Max. forward voltage: 1.28V
Load current: 140A
Max. load current: 220A
Max. forward impulse current: 2.4kA
Max. off-state voltage: 1.6kV
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
на замовлення 33 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+3313.54 грн
6+2736.92 грн
10+2724.49 грн
В кошику  од. на суму  грн.
IXTA140P05T IXT_140P05T.pdf
IXTA140P05T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -50V; -140A; 298W; TO263
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain current: -140A
Drain-source voltage: -50V
Reverse recovery time: 53ns
Gate charge: 200nC
On-state resistance: 9mΩ
Power dissipation: 298W
Gate-source voltage: ±15V
Kind of package: tube
Case: TO263
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IXTT140P10T IXT_140P10T.pdf
IXTT140P10T
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -140A; 568W; TO268
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain current: -140A
Drain-source voltage: -100V
Reverse recovery time: 130ns
Gate charge: 400nC
On-state resistance: 10mΩ
Power dissipation: 568W
Gate-source voltage: ±15V
Kind of package: tube
Case: TO268
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MDMA140P1600TG MDMA140P1600TG.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 140A; TO240AA; Ufmax: 1.11V
Type of semiconductor module: diode
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Load current: 140A
Max. forward voltage: 1.11V
Max. forward impulse current: 2.38kA
Max. off-state voltage: 1.6kV
Kind of package: bulk
Case: TO240AA
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MCMA140P1800TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.8kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Electrical mounting: screw
Mechanical mounting: screw
Load current: 140A
Gate current: 150/200mA
Max. forward voltage: 1.7V
Max. off-state voltage: 1.8kV
Kind of package: bulk
Case: TO240AA
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IXTA140P05T-TRL
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 50V; 298W; D2PAK
Mounting: SMD
Kind of channel: enhancement
Type of transistor: P-MOSFET
Drain-source voltage: 50V
Power dissipation: 298W
Gate-source voltage: 15V
Case: D2PAK
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXTH200N10T IXTH(Q)200N10T.pdf
IXTH200N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 550W; TO247-3; 76ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 550W
Case: TO247-3
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 152nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 76ns
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IXFX200N10P IXFK(X)200N10P.pdf
IXFX200N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; 830W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Power dissipation: 830W
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 235nC
Kind of package: tube
Kind of channel: enhancement
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IXTK120P20T IXT_120P20T.pdf
IXTK120P20T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -200V; -120A; 1040W
Case: PLUS264™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -120A
Gate-source voltage: ±15V
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Power dissipation: 1.04kW
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IXTK102N65X2 IXTK(X)102N65X2.pdf
IXTK102N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; TO264; 450ns
Kind of channel: enhancement
Mounting: THT
Case: TO264
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 450ns
On-state resistance: 30mΩ
Drain current: 102A
Drain-source voltage: 650V
Power dissipation: 1.04kW
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IXTX102N65X2 IXTK(X)102N65X2.pdf
IXTX102N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 102A; 1040W; PLUS247™; 450ns
Kind of channel: enhancement
Mounting: THT
Case: PLUS247™
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: ultra junction x-class
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 450ns
On-state resistance: 30mΩ
Drain current: 102A
Drain-source voltage: 650V
Power dissipation: 1.04kW
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IXTN102N65X2 IXTN102N65X2.pdf
IXTN102N65X2
Виробник: IXYS
Category: Transistor drivers
Description: Module; single transistor; 650V; 76A; SOT227B; screw; Idm: 204A
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: X2-Class
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Polarisation: unipolar
Gate charge: 152nC
Reverse recovery time: 450ns
On-state resistance: 30mΩ
Gate-source voltage: ±40V
Drain current: 76A
Drain-source voltage: 650V
Pulsed drain current: 204A
Power dissipation: 595W
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IXTN120P20T IXTN120P20T.pdf
IXTN120P20T
Виробник: IXYS
Category: Transistor drivers
Description: Module; single transistor; -200V; -106A; SOT227B; screw; Idm: -400A
Case: SOT227B
Semiconductor structure: single transistor
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Technology: TrenchP™
Polarisation: unipolar
Pulsed drain current: -400A
Drain-source voltage: -200V
Drain current: -106A
Gate-source voltage: ±15V
Reverse recovery time: 300ns
Gate charge: 740nC
On-state resistance: 30mΩ
Power dissipation: 830W
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IXYP35N65C5 Littelfuse06282024PowerSemiconductorDiscreteIGBTIXYP35N65C5Datasheet.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 35A; 326W; TO220-3
Type of transistor: IGBT
Power dissipation: 326W
Case: TO220-3
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Collector current: 35A
Gate-emitter voltage: ±20V
Pulsed collector current: 190A
Collector-emitter voltage: 650V
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
DHG60I600HA DHG60I600HA.pdf
DHG60I600HA
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 60A; tube; Ifsm: 430A; TO247-2; 415W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 60A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 430A
Case: TO247-2
Max. forward voltage: 2.41V
Power dissipation: 415W
Reverse recovery time: 35ns
Technology: Sonic FRD™
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
DSA15IM200UC DSA15IM200UC.pdf
DSA15IM200UC
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 200V; 15A; reel,tape; 75W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 200V
Load current: 15A
Semiconductor structure: single diode
Max. forward voltage: 0.78V
Max. forward impulse current: 200A
Kind of package: reel; tape
Power dissipation: 75W
на замовлення 1498 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+113.40 грн
6+80.42 грн
25+71.30 грн
100+64.67 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
DSS6-0025BS DSS6-0025BS.pdf
DSS6-0025BS
Виробник: IXYS
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 25V; 6A; reel,tape; 40W
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 25V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 0.3V
Max. forward impulse current: 120A
Kind of package: reel; tape
Power dissipation: 40W
на замовлення 546 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
9+54.47 грн
12+36.48 грн
100+31.84 грн
250+29.85 грн
500+28.52 грн
Мінімальне замовлення: 9 шт
В кошику  од. на суму  грн.
LCB110 LCB110.pdf
LCB110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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CPC1225N CPC1225N.pdf
CPC1225N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.400VAC
Case: SOP4
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
Body dimensions: 4.09x3.81x2.03mm
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
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В кошику  од. на суму  грн.
LCB111 LCB111.pdf
LCB111
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: THT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 5ms
Turn-on time: 5ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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LCB110S LCB110.pdf
LCB110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: DIP6
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 3ms
Control current max.: 50mA
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 120mA
On-state resistance: 35Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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LAA100L LAA100L.pdf
LAA100L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+571.45 грн
50+439.43 грн
100+381.39 грн
В кошику  од. на суму  грн.
LAA100 LAA100.pdf
LAA100
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+701.82 грн
10+570.43 грн
250+461.82 грн
В кошику  од. на суму  грн.
LAA100P LAA100.pdf
LAA100P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x2.16mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Operating temperature: -40...85°C
на замовлення 6 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+592.88 грн
В кошику  од. на суму  грн.
IXFH120N30X3 IXF_120N30X3_HV.pdf 300VProductBrief.pdf
IXFH120N30X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 120A; 735W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 120A
Power dissipation: 735W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 145ns
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IXTP2N65X2 IXTP(Y)2N65X2.pdf
IXTP2N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Gate charge: 4.3nC
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IXTH62N65X2 IXTH62N65X2.pdf
IXTH62N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 62A; 780W; TO247-3; 445ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 62A
Power dissipation: 780W
Case: TO247-3
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 445ns
Gate charge: 0.1µC
Features of semiconductor devices: ultra junction x-class
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DSEI30-06A description DSEI30-06A.pdf
DSEI30-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; tube; Ifsm: 300A; TO247-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-2
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+337.52 грн
3+271.95 грн
5+257.03 грн
10+252.05 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
MD16200S-DKM2MM littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf?assetguid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Max. load current: 310A
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MDMA210P1600YD MDMA210P1600YD.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
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LCA110 LCA110.pdf
LCA110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LCA110S lca110.pdf
LCA110S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LCA110L LCA110L.pdf
LCA110L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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LCA110LSTR LCA110L.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCA110STR LCA110.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCA110LS LCA110L.pdf
LCA110LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
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DSEK60-06A DSEK60-06A.pdf
DSEK60-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; tube; Ifsm: 300A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 0.3kA
Case: TO247-3
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 183 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+398.23 грн
5+361.50 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
DSEK60-12A mc557.pdf
DSEK60-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26Ax2; tube; Ifsm: 200A; TO247-3; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-3
Max. forward voltage: 2.55V
Power dissipation: 125W
Reverse recovery time: 40ns
Technology: FRED
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+472.34 грн
В кошику  од. на суму  грн.
IXTR40P50P IXTR40P50P.pdf
IXTR40P50P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 312W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -22A
Reverse recovery time: 477ns
Gate charge: 205nC
On-state resistance: 0.26Ω
Gate-source voltage: ±20V
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1125.05 грн
3+930.27 грн
10+825.80 грн
В кошику  од. на суму  грн.
IXTQ82N25P IXTK82N25P-DTE.pdf
IXTQ82N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 82A
Power dissipation: 500W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 262 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+644.67 грн
5+504.10 грн
10+446.90 грн
30+430.31 грн
В кошику  од. на суму  грн.
IXFB100N50P IXFB100N50P.pdf
IXFB100N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 49mΩ
Gate-source voltage: ±30V
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1890W
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IXFB100N50Q3 IXFB100N50Q3.pdf
IXFB100N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 49mΩ
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1.56kW
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