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DSS2X101-02A DSS2X101-02A IXYS DSS2x101-02A.pdf Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.84V
Max. off-state voltage: 200V
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS2X101-015A DSS2X101-015A IXYS DSS2X101-015A.pdf description Category: Diode modules
Description: Module: diode; double independent; 150V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.99V
Max. off-state voltage: 150V
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS2X61-01A DSS2X61-01A IXYS DSS2x61-01A.pdf Category: Diode modules
Description: Module: diode; double independent; 100V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.74V
Max. off-state voltage: 0.1kV
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 700A
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS2X41-01A DSS2X41-01A IXYS DSS2x41-01A.pdf description Category: Diode modules
Description: Module: diode; double independent; 100V; If: 40Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.7V
Max. off-state voltage: 0.1kV
Load current: 40A x2
Max. load current: 80A
Max. forward impulse current: 0.45kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS2X61-0045A DSS2X61-0045A IXYS DSS2x61-0045A.pdf description Category: Diode modules
Description: Module: diode; double independent; 45V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.65V
Max. off-state voltage: 45V
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS2X111-008A DSS2X111-008A IXYS DSS2x111-008A.pdf Category: Diode modules
Description: Module: diode; double independent; 80V; If: 110Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.72V
Max. off-state voltage: 80V
Load current: 110A x2
Max. load current: 220A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS20-0015B DSS20-0015B IXYS DSS20-0015B.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20A; TO220AC; Ufmax: 0.33V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AC
Max. forward voltage: 0.33V
Power dissipation: 90W
Max. off-state voltage: 15V
Load current: 20A
Max. forward impulse current: 0.3kA
Semiconductor structure: single diode
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DSS2X160-0045A DSS2X160-0045A IXYS DSS2X160-0045A.pdf Category: Diode modules
Description: Module: diode; double,common cathode; 45V; If: 160Ax2; SOT227B
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.73V
Max. off-state voltage: 45V
Load current: 160A x2
Max. load current: 320A
Max. forward impulse current: 1.6kA
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
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DSS2X81-0045B DSS2X81-0045B IXYS DSS2x81-0045B.pdf Category: Diode modules
Description: Module: diode; double independent; 45V; If: 80Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.63V
Max. off-state voltage: 45V
Load current: 80A x2
Max. load current: 160A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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IXTN110N20L2 IXTN110N20L2 IXYS IXTN110N20L2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Reverse recovery time: 420ns
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 275A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
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IXTK110N20L2 IXTK110N20L2 IXYS IXT_110N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Features of semiconductor devices: linear power mosfet
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IXTX110N20L2 IXTX110N20L2 IXYS IXT_110N20L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
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IXTP3N100D2 IXTP3N100D2 IXYS IXTA(P)3N100D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
на замовлення 154 шт:
термін постачання 14-30 дні (днів)
2+330.01 грн
10+212.47 грн
25+190.47 грн
50+176.92 грн
100+163.38 грн
Мінімальне замовлення: 2
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IXTH3N100P IXTH3N100P IXYS IXTA(H,P)3N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
1+477.69 грн
10+351.30 грн
30+274.27 грн
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IXTA3N100D2 IXTA3N100D2 IXYS IXTA(P)3N100D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
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IXTA3N100D2HV IXTA3N100D2HV IXYS IXTA3N100D2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
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IXTA3N100P IXTA3N100P IXYS IXTA(H,P)3N100P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
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IXTP3N100P IXTP3N100P IXYS IXTA(H,P)3N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
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IXFP18N65X2M IXFP18N65X2M IXYS IXFP18N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFA18N65X2 IXFA18N65X2 IXYS IXF_18N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFH18N65X2 IXFH18N65X2 IXYS IXF_18N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFP18N65X2 IXFP18N65X2 IXYS IXF_18N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXTQ76N25T IXTQ76N25T IXYS IXTA(H,I,P,Q)76N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO3P
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
2+433.02 грн
10+292.89 грн
Мінімальне замовлення: 2
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PM1204 PM1204 IXYS PM1204.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
1+991.85 грн
10+673.82 грн
50+560.39 грн
100+540.07 грн
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IXFH26N50 IXFH26N50 IXYS 91525.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXFH26N50P IXFH26N50P IXYS IXFH26N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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IXTY02N120P IXTY02N120P IXYS IXTP(Y)02N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO252
Mounting: SMD
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 75Ω
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
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IXTP02N120P IXTP02N120P IXYS IXTP(Y)02N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO220AB
Mounting: THT
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 75Ω
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
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IXFH40N85X IXFH40N85X IXYS IXF_40N85X_HV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 40A; 860W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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CPC1030N CPC1030N IXYS CPC1030N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
Body dimensions: 4.09x3.81x2.03mm
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 1.5kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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CPC1030NTR CPC1030NTR IXYS CPC1030N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Operating temperature: -40...85°C
Case: SOP4
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Kind of output: MOSFET
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Manufacturer series: OptoMOS
On-state resistance: 30Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 1.5kV
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CPC1009NTR CPC1009NTR IXYS CPC1009N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Operating temperature: -40...85°C
Case: SOP4
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Kind of output: MOSFET
Turn-on time: 2ms
Turn-off time: 0.5ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 150mA
Manufacturer series: OptoMOS
On-state resistance: 8Ω
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 1.5kV
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CPC1006NTR CPC1006NTR IXYS CPC1006N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Operating temperature: -40...85°C
Case: SOP4
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Kind of output: MOSFET
Turn-on time: 10ms
Turn-off time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 75mA
Manufacturer series: OptoMOS
On-state resistance: 10Ω
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
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DSSK10-018A DSSK10-018A IXYS DSSK10-018A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 180V; 5Ax2; TO220AB; Ufmax: 0.62V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 180V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.62V
Max. forward impulse current: 120A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
5+96.63 грн
6+81.27 грн
10+71.95 грн
Мінімальне замовлення: 5
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CPC1976YX6 CPC1976YX6 IXYS CPC1976YX6.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 500µs
Operating temperature: -40...85°C
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IXSH80N120L2KHV IXYS IXSH80N120L2KHV.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Pulsed drain current: 198A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
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DSEP30-12A DSEP30-12A IXYS DSEP30-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 1.79V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
на замовлення 217 шт:
термін постачання 14-30 дні (днів)
2+368.30 грн
10+275.96 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEP30-12CR DSEP30-12CR IXYS media?resourcetype=datasheets&itemid=4c065f49-4633-4e89-8717-37676123569f&filename=Littelfuse-Power-Semiconductors-DSEP30-12CR-Datasheet Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 250A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 4.98V
Power dissipation: 250W
Reverse recovery time: 15ns
Technology: HiPerDynFRED
на замовлення 268 шт:
термін постачання 14-30 дні (днів)
1+739.33 грн
3+604.41 грн
10+569.70 грн
В кошику  од. на суму  грн.
DSEP30-12AR DSEP30-12AR IXYS DSEP30-12AR.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: ISOPLUS247™
Max. forward voltage: 1.79V
Power dissipation: 135W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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DSEP30-12B DSEP30-12B IXYS DSEP30-12B.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 3.75V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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IXFL100N50P IXFL100N50P IXYS IXFL100N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™
Case: ISOPLUS264™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 240nC
On-state resistance: 52mΩ
Drain current: 68A
Power dissipation: 625W
Drain-source voltage: 500V
Kind of package: tube
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MDD44-18N1B MDD44-18N1B IXYS MDD44-18N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Kind of package: bulk
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
1+1960.91 грн
10+1650.70 грн
В кошику  од. на суму  грн.
DSP8-08A DSP8-08A IXYS Littelfuse-Power-Semiconductors-DSP8-08A-Datasheet?assetguid=cb034645-c550-4ca3-9793-0552505757de Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 120A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.16V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 148 шт:
термін постачання 14-30 дні (днів)
3+202.38 грн
10+150.68 грн
50+123.59 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DSP8-08AS-TUB IXYS DSP8-08AS.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
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DSP8-08AS-TRL IXYS Littelfuse-Power-Semiconductors-DSP8-08AS-Datasheet?assetguid=0d1887aa-022d-4c13-a29c-7dec3225315c Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK,TO263AB; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double
Case: D2PAK; TO263AB
Max. forward voltage: 1.15V
Max. forward impulse current: 120A
Kind of package: reel; tape
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DSP8-08S-TRL IXYS Littelfuse-Power-Semiconductors-DSP8-08S-Datasheet?assetguid=af3f4e23-d4d4-426d-8a6d-319eb7a8b2fc Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK,TO263AB; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double
Case: D2PAK; TO263AB
Max. forward voltage: 1.15V
Max. forward impulse current: 120A
Kind of package: reel; tape
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DSP8-08S-TUB IXYS DSP8-08S.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
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DSP8-12S-TRL IXYS DSP8-12S.pdf Littelfuse-Power-Semiconductors-DSP8-12S-Datasheet?assetguid=9719434f-f61b-4b2f-aff1-587c9c00aa7d Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; D2PAK,TO263AB; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Case: D2PAK; TO263AB
Max. forward voltage: 1.15V
Max. forward impulse current: 130A
Kind of package: reel; tape
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DSP8-12S-TUB IXYS DSP8-12S.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Kind of package: tube
Power dissipation: 100W
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IXFK180N25T IXFK180N25T IXYS IXFK(X)180N25T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO264
Kind of package: tube
Drain-source voltage: 250V
Drain current: 180A
Gate charge: 364nC
On-state resistance: 12.9mΩ
Power dissipation: 1390W
Polarisation: unipolar
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
1+1174.18 грн
5+1066.60 грн
В кошику  од. на суму  грн.
IXFK250N10P IXFK250N10P IXYS IXFK(X)250N10P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 100V
Drain current: 250A
Gate charge: 205nC
On-state resistance: 6.5mΩ
Power dissipation: 1.25kW
Polarisation: unipolar
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
1+1616.32 грн
В кошику  од. на суму  грн.
IXFK230N20T IXFK230N20T IXYS IXFK(X)230N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1.67kW
Case: TO264
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 358nC
Features of semiconductor devices: thrench gate power mosfet
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
1+1698.36 грн
5+1386.59 грн
В кошику  од. на суму  грн.
IXFK520N075T2 IXFK520N075T2 IXYS IXFK(X)520N075T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO264
Kind of package: tube
Drain-source voltage: 75V
Drain current: 520A
Gate charge: 545nC
On-state resistance: 2.2mΩ
Power dissipation: 1.25kW
Polarisation: unipolar
на замовлення 296 шт:
термін постачання 14-30 дні (днів)
1+1099.42 грн
5+875.29 грн
10+860.90 грн
В кошику  од. на суму  грн.
IXFK240N25X3 IXFK240N25X3 IXYS IXFK(X)240N25X3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Case: TO264
Kind of package: tube
Drain-source voltage: 250V
Drain current: 240A
Reverse recovery time: 177ns
Gate charge: 345nC
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Polarisation: unipolar
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
1+2048.43 грн
5+1803.92 грн
В кошику  од. на суму  грн.
IXFK80N50P IXFK80N50P IXYS IXFK(X)80N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 500V
Drain current: 80A
Gate charge: 197nC
On-state resistance: 65mΩ
Power dissipation: 1.04kW
Polarisation: unipolar
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
1+1295.42 грн
10+1166.49 грн
В кошику  од. на суму  грн.
IXFK32N80Q3 IXFK32N80Q3 IXYS IXFK(X)32N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 800V
Drain current: 32A
Gate charge: 0.14µC
On-state resistance: 0.27Ω
Power dissipation: 1kW
Polarisation: unipolar
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
1+1427.61 грн
3+1173.27 грн
10+1051.37 грн
В кошику  од. на суму  грн.
IXTK82N25P IXTK82N25P IXYS IXTK82N25P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: PolarHT™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 250V
Drain current: 82A
Reverse recovery time: 200ns
Gate charge: 142nC
On-state resistance: 38mΩ
Gate-source voltage: ±20V
Power dissipation: 500W
Polarisation: unipolar
на замовлення 279 шт:
термін постачання 14-30 дні (днів)
1+773.06 грн
10+528.22 грн
25+514.68 грн
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IXFK220N20X3 IXFK220N20X3 IXYS IXF_220N20X3_HV.pdf 200VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 200V
Drain current: 220A
Reverse recovery time: 116ns
Gate charge: 204nC
On-state resistance: 6.2mΩ
Gate-source voltage: ±20V
Power dissipation: 960W
Polarisation: unipolar
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
1+1356.50 грн
3+1110.62 грн
10+995.50 грн
25+927.78 грн
В кошику  од. на суму  грн.
IXFK420N10T IXFK420N10T IXYS IXFK420N10T_IXFX420N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
1+1313.66 грн
5+1098.77 грн
В кошику  од. на суму  грн.
IXFH20N100P IXFH20N100P IXYS IXF_20N100P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
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DSS2X101-02A DSS2x101-02A.pdf
DSS2X101-02A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 200V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.84V
Max. off-state voltage: 200V
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS2X101-015A description DSS2X101-015A.pdf
DSS2X101-015A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 100Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.99V
Max. off-state voltage: 150V
Load current: 100A x2
Max. load current: 200A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS2X61-01A DSS2x61-01A.pdf
DSS2X61-01A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.74V
Max. off-state voltage: 0.1kV
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 700A
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS2X41-01A description DSS2x41-01A.pdf
DSS2X41-01A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 100V; If: 40Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.7V
Max. off-state voltage: 0.1kV
Load current: 40A x2
Max. load current: 80A
Max. forward impulse current: 0.45kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS2X61-0045A description DSS2x61-0045A.pdf
DSS2X61-0045A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 60Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.65V
Max. off-state voltage: 45V
Load current: 60A x2
Max. load current: 120A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS2X111-008A DSS2x111-008A.pdf
DSS2X111-008A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 80V; If: 110Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.72V
Max. off-state voltage: 80V
Load current: 110A x2
Max. load current: 220A
Max. forward impulse current: 1.4kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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DSS20-0015B DSS20-0015B.pdf
DSS20-0015B
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20A; TO220AC; Ufmax: 0.33V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AC
Max. forward voltage: 0.33V
Power dissipation: 90W
Max. off-state voltage: 15V
Load current: 20A
Max. forward impulse current: 0.3kA
Semiconductor structure: single diode
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DSS2X160-0045A DSS2X160-0045A.pdf
DSS2X160-0045A
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 45V; If: 160Ax2; SOT227B
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.73V
Max. off-state voltage: 45V
Load current: 160A x2
Max. load current: 320A
Max. forward impulse current: 1.6kA
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
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DSS2X81-0045B DSS2x81-0045B.pdf
DSS2X81-0045B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 45V; If: 80Ax2; SOT227B; screw
Electrical mounting: screw
Kind of package: tube
Features of semiconductor devices: Schottky
Mechanical mounting: screw
Case: SOT227B
Max. forward voltage: 0.63V
Max. off-state voltage: 45V
Load current: 80A x2
Max. load current: 160A
Max. forward impulse current: 0.8kA
Semiconductor structure: double independent
Type of semiconductor module: diode
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IXTN110N20L2 IXTN110N20L2.pdf
IXTN110N20L2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 100A; SOT227B; screw; Idm: 275A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 100A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Gate charge: 500nC
Kind of channel: enhancement
Reverse recovery time: 420ns
Type of semiconductor module: MOSFET transistor
Pulsed drain current: 275A
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
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IXTK110N20L2 IXT_110N20L2.pdf
IXTK110N20L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 110A; 960W; TO264; 420ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: TO264
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
Features of semiconductor devices: linear power mosfet
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IXTX110N20L2 IXT_110N20L2.pdf
IXTX110N20L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear L2™; unipolar; 200V; 110A; 960W; 420ns
Type of transistor: N-MOSFET
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 110A
Power dissipation: 960W
Case: PLUS247™
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 500nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 420ns
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IXTP3N100D2 IXTA(P)3N100D2.pdf
IXTP3N100D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
On-state resistance: 5.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
на замовлення 154 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+330.01 грн
10+212.47 грн
25+190.47 грн
50+176.92 грн
100+163.38 грн
Мінімальне замовлення: 2
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IXTH3N100P IXTA(H,P)3N100P.pdf
IXTH3N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO247-3; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO247-3
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+477.69 грн
10+351.30 грн
30+274.27 грн
В кошику  од. на суму  грн.
IXTA3N100D2 IXTA(P)3N100D2.pdf
IXTA3N100D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
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IXTA3N100D2HV IXTA3N100D2HV.pdf
IXTA3N100D2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263HV; 17ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263HV
On-state resistance: 6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 1.02µC
Reverse recovery time: 17ns
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IXTA3N100P IXTA(H,P)3N100P.pdf
IXTA3N100P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO263; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
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IXTP3N100P IXTA(H,P)3N100P.pdf
IXTP3N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 3A; 125W; TO220AB; 820ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3A
Power dissipation: 125W
Case: TO220AB
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 820ns
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IXFP18N65X2M IXFP18N65X2M.pdf
IXFP18N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 36W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 36W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFA18N65X2 IXF_18N65X2.pdf
IXFA18N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFH18N65X2 IXF_18N65X2.pdf
IXFH18N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXFP18N65X2 IXF_18N65X2.pdf
IXFP18N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 18A; 290W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 18A
Power dissipation: 290W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 135ns
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IXTQ76N25T IXTA(H,I,P,Q)76N25T.pdf
IXTQ76N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 76A; 460W; TO3P; 148ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 76A
Power dissipation: 460W
Case: TO3P
On-state resistance: 44mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 148ns
на замовлення 150 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+433.02 грн
10+292.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PM1204 PM1204.pdf
PM1204
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 500mA; max.400VAC; 1-phase
Case: DIP6
Mounting: THT
Type of relay: solid state
Switching method: zero voltage switching
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 100mA
Max. operating current: 0.5A
Switched voltage: max. 400V AC
Insulation voltage: 3.75kV
Relay variant: 1-phase
на замовлення 250 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+991.85 грн
10+673.82 грн
50+560.39 грн
100+540.07 грн
В кошику  од. на суму  грн.
IXFH26N50 91525.pdf
IXFH26N50
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 300W; TO247-3; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXFH26N50P IXFH26N50P.pdf
IXFH26N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 400W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
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IXTY02N120P IXTP(Y)02N120P.pdf
IXTY02N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO252; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO252
Mounting: SMD
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 75Ω
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
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IXTP02N120P IXTP(Y)02N120P.pdf
IXTP02N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.2A; 33W; TO220AB; 1.6us
Type of transistor: N-MOSFET
Power dissipation: 33W
Case: TO220AB
Mounting: THT
Reverse recovery time: 1.6µs
Drain current: 0.2A
On-state resistance: 75Ω
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
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IXFH40N85X IXF_40N85X_HV.pdf
IXFH40N85X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X-Class; unipolar; 850V; 40A; 860W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X-Class
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 40A
Power dissipation: 860W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
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CPC1030N CPC1030N.pdf
CPC1030N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
Mounting: SMT
Manufacturer series: OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 1ms
Turn-on time: 2ms
Control current max.: 50mA
Body dimensions: 4.09x3.81x2.03mm
Max. operating current: 120mA
On-state resistance: 30Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 1.5kV
Kind of output: MOSFET
Relay variant: 1-phase; current source
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CPC1030NTR CPC1030N.pdf
CPC1030NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Operating temperature: -40...85°C
Case: SOP4
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Kind of output: MOSFET
Turn-on time: 2ms
Turn-off time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Manufacturer series: OptoMOS
On-state resistance: 30Ω
Relay variant: 1-phase; current source
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 1.5kV
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CPC1009NTR CPC1009N.pdf
CPC1009NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 150mA; max.100VAC
Operating temperature: -40...85°C
Case: SOP4
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Kind of output: MOSFET
Turn-on time: 2ms
Turn-off time: 0.5ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 150mA
Manufacturer series: OptoMOS
On-state resistance: 8Ω
Relay variant: 1-phase; current source
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 1.5kV
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CPC1006NTR CPC1006N.pdf
CPC1006NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 75mA; max.60VAC
Operating temperature: -40...85°C
Case: SOP4
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Kind of output: MOSFET
Turn-on time: 10ms
Turn-off time: 10ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 75mA
Manufacturer series: OptoMOS
On-state resistance: 10Ω
Relay variant: 1-phase; current source
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 1.5kV
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DSSK10-018A DSSK10-018A.pdf
DSSK10-018A
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 180V; 5Ax2; TO220AB; Ufmax: 0.62V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 180V
Load current: 5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.62V
Max. forward impulse current: 120A
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
Power dissipation: 90W
на замовлення 28 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+96.63 грн
6+81.27 грн
10+71.95 грн
Мінімальне замовлення: 5
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CPC1976YX6 CPC1976YX6.pdf
CPC1976YX6
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 2000mA; max.600VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 600V AC
Relay variant: 1-phase
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Turn-on time: 500µs
Operating temperature: -40...85°C
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IXSH80N120L2KHV IXSH80N120L2KHV.pdf
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 58A; Idm: 198A; 395W
Mounting: THT
Case: TO247-4
Kind of package: tube
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -10...23V
Gate charge: 135nC
On-state resistance: 58mΩ
Drain current: 58A
Pulsed drain current: 198A
Power dissipation: 395W
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
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DSEP30-12A DSEP30-12A.pdf
DSEP30-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 1.79V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
на замовлення 217 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
2+368.30 грн
10+275.96 грн
Мінімальне замовлення: 2
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DSEP30-12CR media?resourcetype=datasheets&itemid=4c065f49-4633-4e89-8717-37676123569f&filename=Littelfuse-Power-Semiconductors-DSEP30-12CR-Datasheet
DSEP30-12CR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 250A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 250A
Case: ISOPLUS247™
Max. forward voltage: 4.98V
Power dissipation: 250W
Reverse recovery time: 15ns
Technology: HiPerDynFRED
на замовлення 268 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+739.33 грн
3+604.41 грн
10+569.70 грн
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DSEP30-12AR DSEP30-12AR.pdf
DSEP30-12AR
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: ISOPLUS247™
Max. forward voltage: 1.79V
Power dissipation: 135W
Reverse recovery time: 40ns
Technology: HiPerFRED™
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DSEP30-12B DSEP30-12B.pdf
DSEP30-12B
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO247-2; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 3.75V
Power dissipation: 165W
Reverse recovery time: 35ns
Technology: HiPerFRED™
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IXFL100N50P IXFL100N50P.pdf
IXFL100N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 68A; 625W; ISOPLUS264™
Case: ISOPLUS264™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: THT
Polarisation: unipolar
Gate charge: 240nC
On-state resistance: 52mΩ
Drain current: 68A
Power dissipation: 625W
Drain-source voltage: 500V
Kind of package: tube
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MDD44-18N1B MDD44-18N1B-DTE.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MDD44-18N1B
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.8kV; If: 59A; TO240AA; Ufmax: 1.26V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.8kV
Load current: 59A
Case: TO240AA
Max. forward voltage: 1.26V
Max. forward impulse current: 980A
Electrical mounting: screw
Max. load current: 100A
Mechanical mounting: screw
Kind of package: bulk
на замовлення 29 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1960.91 грн
10+1650.70 грн
В кошику  од. на суму  грн.
DSP8-08A Littelfuse-Power-Semiconductors-DSP8-08A-Datasheet?assetguid=cb034645-c550-4ca3-9793-0552505757de
DSP8-08A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 8A; tube; Ifsm: 120A; TO220AB; 100W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double series
Case: TO220AB
Max. forward voltage: 1.16V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
Heatsink thickness: 1.14...1.39mm
на замовлення 148 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+202.38 грн
10+150.68 грн
50+123.59 грн
Мінімальне замовлення: 3
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DSP8-08AS-TUB DSP8-08AS.pdf
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
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DSP8-08AS-TRL Littelfuse-Power-Semiconductors-DSP8-08AS-Datasheet?assetguid=0d1887aa-022d-4c13-a29c-7dec3225315c
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK,TO263AB; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double
Case: D2PAK; TO263AB
Max. forward voltage: 1.15V
Max. forward impulse current: 120A
Kind of package: reel; tape
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DSP8-08S-TRL Littelfuse-Power-Semiconductors-DSP8-08S-Datasheet?assetguid=af3f4e23-d4d4-426d-8a6d-319eb7a8b2fc
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK,TO263AB; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double
Case: D2PAK; TO263AB
Max. forward voltage: 1.15V
Max. forward impulse current: 120A
Kind of package: reel; tape
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DSP8-08S-TUB DSP8-08S.pdf
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Power dissipation: 100W
Kind of package: tube
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DSP8-12S-TRL DSP8-12S.pdf Littelfuse-Power-Semiconductors-DSP8-12S-Datasheet?assetguid=9719434f-f61b-4b2f-aff1-587c9c00aa7d
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 11A; D2PAK,TO263AB; Ufmax: 1.15V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 11A
Case: D2PAK; TO263AB
Max. forward voltage: 1.15V
Max. forward impulse current: 130A
Kind of package: reel; tape
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DSP8-12S-TUB DSP8-12S.pdf
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8A; D2PAK; Ufmax: 1.08V; Ifsm: 120A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 8A
Semiconductor structure: double series
Case: D2PAK
Max. forward voltage: 1.08V
Max. forward impulse current: 120A
Kind of package: tube
Power dissipation: 100W
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IXFK180N25T IXFK(X)180N25T.pdf
IXFK180N25T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 180A; 1390W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO264
Kind of package: tube
Drain-source voltage: 250V
Drain current: 180A
Gate charge: 364nC
On-state resistance: 12.9mΩ
Power dissipation: 1390W
Polarisation: unipolar
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1174.18 грн
5+1066.60 грн
В кошику  од. на суму  грн.
IXFK250N10P IXFK(X)250N10P.pdf
IXFK250N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 250A; 1250W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 100V
Drain current: 250A
Gate charge: 205nC
On-state resistance: 6.5mΩ
Power dissipation: 1.25kW
Polarisation: unipolar
на замовлення 1 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1616.32 грн
В кошику  од. на суму  грн.
IXFK230N20T IXFK(X)230N20T.pdf
IXFK230N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1.67kW
Case: TO264
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 358nC
Features of semiconductor devices: thrench gate power mosfet
на замовлення 23 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1698.36 грн
5+1386.59 грн
В кошику  од. на суму  грн.
IXFK520N075T2 IXFK(X)520N075T2.pdf
IXFK520N075T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 520A; 1250W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO264
Kind of package: tube
Drain-source voltage: 75V
Drain current: 520A
Gate charge: 545nC
On-state resistance: 2.2mΩ
Power dissipation: 1.25kW
Polarisation: unipolar
на замовлення 296 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1099.42 грн
5+875.29 грн
10+860.90 грн
В кошику  од. на суму  грн.
IXFK240N25X3 IXFK(X)240N25X3.pdf
IXFK240N25X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 240A; 1250W; TO264; 177ns
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Case: TO264
Kind of package: tube
Drain-source voltage: 250V
Drain current: 240A
Reverse recovery time: 177ns
Gate charge: 345nC
On-state resistance: 5mΩ
Power dissipation: 1.25kW
Polarisation: unipolar
на замовлення 11 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+2048.43 грн
5+1803.92 грн
В кошику  од. на суму  грн.
IXFK80N50P IXFK(X)80N50P.pdf
IXFK80N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 80A; 1040W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 500V
Drain current: 80A
Gate charge: 197nC
On-state resistance: 65mΩ
Power dissipation: 1.04kW
Polarisation: unipolar
на замовлення 12 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1295.42 грн
10+1166.49 грн
В кошику  од. на суму  грн.
IXFK32N80Q3 IXFK(X)32N80Q3.pdf
IXFK32N80Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 800V
Drain current: 32A
Gate charge: 0.14µC
On-state resistance: 0.27Ω
Power dissipation: 1kW
Polarisation: unipolar
на замовлення 22 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1427.61 грн
3+1173.27 грн
10+1051.37 грн
В кошику  од. на суму  грн.
IXTK82N25P IXTK82N25P-DTE.pdf
IXTK82N25P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: PolarHT™
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 250V
Drain current: 82A
Reverse recovery time: 200ns
Gate charge: 142nC
On-state resistance: 38mΩ
Gate-source voltage: ±20V
Power dissipation: 500W
Polarisation: unipolar
на замовлення 279 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+773.06 грн
10+528.22 грн
25+514.68 грн
В кошику  од. на суму  грн.
IXFK220N20X3 IXF_220N20X3_HV.pdf 200VProductBrief.pdf
IXFK220N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO264
Kind of package: tube
Drain-source voltage: 200V
Drain current: 220A
Reverse recovery time: 116ns
Gate charge: 204nC
On-state resistance: 6.2mΩ
Gate-source voltage: ±20V
Power dissipation: 960W
Polarisation: unipolar
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1356.50 грн
3+1110.62 грн
10+995.50 грн
25+927.78 грн
В кошику  од. на суму  грн.
IXFK420N10T IXFK420N10T_IXFX420N10T.pdf
IXFK420N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 100V; 420A; 1670W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 420A
Power dissipation: 1.67kW
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: THT
Gate charge: 670nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: GigaMOS™; HiPerFET™; Trench™
на замовлення 7 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
1+1313.66 грн
5+1098.77 грн
В кошику  од. на суму  грн.
IXFH20N100P IXF_20N100P.pdf
IXFH20N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 570mΩ
Mounting: THT
Gate charge: 126nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 300ns
Technology: HiPerFET™; Polar™
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