| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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DSEK60-12A | IXYS |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 26Ax2; Ifsm: 200A; TO247-3; tube; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 26A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward impulse current: 200A Case: TO247-3 Kind of package: tube Max. forward voltage: 2.55V Power dissipation: 125W Reverse recovery time: 40ns Technology: FRED |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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IXTR40P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 312W Case: ISOPLUS247™ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: PolarP™ Drain-source voltage: -500V Drain current: -22A Reverse recovery time: 477ns Gate charge: 205nC On-state resistance: 0.26Ω Gate-source voltage: ±20V |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
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IXTQ82N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 82A Power dissipation: 500W Case: TO3P Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: THT Gate charge: 142nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
на замовлення 262 шт: термін постачання 14-30 дні (днів) |
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IXFB100N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™ Kind of package: tube Kind of channel: enhancement Mounting: THT Technology: HiPerFET™; Polar™ Type of transistor: N-MOSFET Case: PLUS264™ Polarisation: unipolar Reverse recovery time: 200ns Gate charge: 240nC On-state resistance: 49mΩ Gate-source voltage: ±30V Drain current: 100A Drain-source voltage: 500V Power dissipation: 1890W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFB100N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™ Kind of package: tube Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Case: PLUS264™ Polarisation: unipolar Gate charge: 255nC On-state resistance: 49mΩ Drain current: 100A Drain-source voltage: 500V Power dissipation: 1.56kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXGK400N30A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264 Case: TO264 Mounting: THT Technology: GenX3™; PT Type of transistor: IGBT Turn-on time: 0.1µs Gate charge: 560nC Turn-off time: 565ns Gate-emitter voltage: ±20V Collector current: 200A Collector-emitter voltage: 300V Power dissipation: 1kW Pulsed collector current: 1.2kA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTN80N30L2 | IXYS |
Category: Transistor modules Description: Module; single transistor; 300V; 80A; SOT227B; screw; Idm: 200A Case: SOT227B Type of semiconductor module: MOSFET transistor Kind of channel: enhancement Technology: Linear L2™ Mechanical mounting: screw Electrical mounting: screw Polarisation: unipolar Reverse recovery time: 485ns Gate charge: 660nC On-state resistance: 38mΩ Gate-source voltage: ±30V Drain current: 80A Pulsed drain current: 200A Drain-source voltage: 300V Power dissipation: 735W Semiconductor structure: single transistor |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| MIXA225RF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Collector current: 250A Pulsed collector current: 500A Power dissipation: 1.1kW Topology: boost chopper; NTC thermistor Semiconductor structure: diode/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MDNA425P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Case: SimBus F Electrical mounting: Press-Fit Mechanical mounting: screw Kind of package: bulk Max. forward impulse current: 10kA Load current: 425A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MDNA300P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Case: SimBus F Electrical mounting: Press-Fit Mechanical mounting: screw Kind of package: bulk Max. forward impulse current: 8kA Load current: 300A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MDNA600P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Case: SimBus F Electrical mounting: Press-Fit Mechanical mounting: screw Kind of package: bulk Max. forward impulse current: 15kA Load current: 600A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MIXA300PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Collector current: 325A Pulsed collector current: 650A Power dissipation: 1.5kW Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT Application: fans; for pump; for UPS; motors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MIXA450PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Collector current: 450A Pulsed collector current: 900A Power dissipation: 2.1kW Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT Application: fans; for pump; for UPS; motors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MIXG330PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Case: SimBus F Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT Technology: X2PT Max. off-state voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MIXG490PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: X2PT Max. off-state voltage: 1.2kV Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MIXG330PF1200PTSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor Case: SimBus F Topology: IGBT half-bridge; NTC thermistor Type of semiconductor module: IGBT Technology: X2PT Max. off-state voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MIXG490PF1200PTSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: X2PT Max. off-state voltage: 1.2kV Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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VBE55-06NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 600V; If: 68A; Ifsm: 215A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 68A Max. forward impulse current: 215A Electrical mounting: THT Mechanical mounting: screw Version: module Case: ECO-PAC 1 Technology: FRED |
на замовлення 25 шт: термін постачання 14-30 дні (днів) |
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DPG120C300QB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 60Ax2; Ifsm: 450A; TO3P; tube; 275W Mounting: THT Max. forward impulse current: 0.45kA Max. forward voltage: 1.4V Power dissipation: 275W Technology: HiPerFRED™ 2nd Gen Features of semiconductor devices: fast switching Max. off-state voltage: 300V Load current: 60A x2 Kind of package: tube Semiconductor structure: common cathode; double Case: TO3P Type of diode: rectifying Reverse recovery time: 35ns |
на замовлення 17 шт: термін постачання 14-30 дні (днів) |
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| IXGL75N250 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 2.5kV; 110A; 430W; ISOPLUS264™ Type of transistor: IGBT Power dissipation: 430W Case: ISOPLUS264™ Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 110A Pulsed collector current: 580A Collector-emitter voltage: 2.5kV |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||
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IXYH30N450HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV Case: TO247HV Mounting: THT Kind of package: tube Features of semiconductor devices: high voltage Technology: XPT™ Gate charge: 88nC Turn-on time: 632ns Turn-off time: 1545ns Gate-emitter voltage: ±20V Collector current: 30A Power dissipation: 430W Pulsed collector current: 200A Collector-emitter voltage: 4.5kV Type of transistor: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXYT30N450HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV Case: TO268HV Mounting: SMD Kind of package: tube Features of semiconductor devices: high voltage Technology: XPT™ Gate charge: 88nC Turn-on time: 632ns Turn-off time: 1542ns Gate-emitter voltage: ±20V Collector current: 30A Power dissipation: 430W Pulsed collector current: 200A Collector-emitter voltage: 4.5kV Type of transistor: IGBT |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||
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IXFH96N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 96A Power dissipation: 600W Case: TO247-3 On-state resistance: 24mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 145nC |
на замовлення 300 шт: термін постачання 14-30 дні (днів) |
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IXTP48N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 48A Power dissipation: 250W Case: TO220AB On-state resistance: 50mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 60nC Reverse recovery time: 130ns Features of semiconductor devices: thrench gate power mosfet |
на замовлення 299 шт: термін постачання 14-30 дні (днів) |
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IXFX230N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 230A Power dissipation: 1.67kW Case: PLUS247™ On-state resistance: 7.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 358nC Features of semiconductor devices: thrench gate power mosfet |
на замовлення 108 шт: термін постачання 14-30 дні (днів) |
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| MEK600-04DA | IXYS |
Category: Diode modules Description: Module: diode; double,common cathode; 400V; If: 600A; Y4-M6; screw Kind of package: bulk Semiconductor structure: common cathode; double Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Case: Y4-M6 Max. forward voltage: 1.2V Max. off-state voltage: 0.4kV Load current: 600A Max. forward impulse current: 3kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| ZY180RM | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||
| ZY180R480 | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||
| ZY180R350 | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||
| ZY180L350 | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||
| ZY180L480 | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||
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PLA191S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC Mounting: SMT Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 5kV Turn-on time: 3ms Switched voltage: max. 400V AC; max. 400V DC Case: DIP6 Max. operating current: 250mA Turn-off time: 1ms Control current max.: 50mA On-state resistance: 8Ω Type of relay: solid state Manufacturer series: OptoMOS |
на замовлення 199 шт: термін постачання 14-30 дні (днів) |
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| PLA191STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 3ms Turn-off time: 1ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||
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IXTP14N60PM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 75W Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Gate charge: 36nC Features of semiconductor devices: standard power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTK150N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 150A Power dissipation: 714W Case: TO264 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement Technology: PolarHT™ Reverse recovery time: 150ns |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||
| IXTL2N450 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 2A Power dissipation: 220W Case: ISOPLUS i5-pac™ On-state resistance: 20Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.75µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| IXTL2N470 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.7kV; 2A; 220W; ISOPLUS i5-pac™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.7kV Drain current: 2A Power dissipation: 220W Case: ISOPLUS i5-pac™ On-state resistance: 20Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.75µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
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DSP25-16AR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 28Ax2; Ifsm: 300A; ISOPLUS247™; tube Max. off-state voltage: 1.6kV Load current: 28A x2 Kind of package: tube Semiconductor structure: double series Case: ISOPLUS247™ Type of diode: rectifying Mounting: THT Max. forward impulse current: 0.3kA Max. forward voltage: 1.23V Power dissipation: 100W |
на замовлення 5 шт: термін постачання 14-30 дні (днів) |
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DSP25-16A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 25A; Ifsm: 300A; TO247-3; tube; 160W Max. off-state voltage: 1.6kV Load current: 25A Kind of package: tube Semiconductor structure: double series Case: TO247-3 Type of diode: rectifying Mounting: THT Max. forward impulse current: 0.3kA Max. forward voltage: 1.23V Power dissipation: 160W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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DSP25-16AT-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A Max. off-state voltage: 1.6kV Load current: 25A Semiconductor structure: double series Case: D3PAK Type of diode: rectifying Mounting: SMD Max. forward impulse current: 0.3kA Max. forward voltage: 1.16V Power dissipation: 160W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| DSP25-16AT-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V Max. off-state voltage: 1.6kV Load current: 25A Kind of package: reel; tape Case: D3PAK; TO268AA Type of diode: rectifying Mounting: SMD Max. forward impulse current: 325A Max. forward voltage: 1.23V |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | |||||||||||
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IXBH12N300 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3 Features of semiconductor devices: high voltage Type of transistor: IGBT Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 62nC Turn-on time: 460ns Turn-off time: 705ns Collector current: 12A Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 160W Collector-emitter voltage: 3kV Technology: BiMOSFET™; FRED |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||
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LF2101NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA Mounting: SMD Type of integrated circuit: driver Case: SO8 Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Kind of package: reel; tape Operating temperature: -40...125°C Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V Voltage class: 600V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||
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LAA108S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS Operating temperature: -40...85°C Case: DIP8 Kind of output: MOSFET Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Turn-off time: 3ms Turn-on time: 3ms Body dimensions: 9.66x6.35x3.3mm Control current max.: 50mA Max. operating current: 300mA On-state resistance: 8Ω Switched voltage: max. 100V AC; max. 100V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| LAA108STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS Operating temperature: -40...85°C Case: DIP8 Kind of output: MOSFET Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Turn-off time: 3ms Turn-on time: 3ms Body dimensions: 9.66x6.35x3.3mm Control current max.: 50mA Max. operating current: 300mA On-state resistance: 8Ω Switched voltage: max. 100V AC; max. 100V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||
| MKI75-06A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Application: for UPS; motors Max. off-state voltage: 0.6kV Technology: NPT Topology: H-bridge Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MWI75-06A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Application: motors Max. off-state voltage: 0.6kV Technology: NPT Topology: IGBT three-phase bridge; NTC thermistor Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MKI75-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Application: for UPS; motors Max. off-state voltage: 0.6kV Technology: NPT Topology: H-bridge; NTC thermistor Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MWI30-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 30A Power dissipation: 140W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 60A Application: motors Max. off-state voltage: 0.6kV Technology: NPT Topology: IGBT three-phase bridge Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
 |
IXTA34N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Case: TO263 On-state resistance: 96mΩ Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Power dissipation: 540W Gate charge: 54nC Features of semiconductor devices: ultra junction x-class |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTP01N100D | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.1A Power dissipation: 25W Case: TO220AB On-state resistance: 80Ω Mounting: THT Gate charge: 0.1µC Kind of package: tube Kind of channel: depletion Reverse recovery time: 2ns |
на замовлення 286 шт: термін постачання 14-30 дні (днів) |
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IXTH1N300P3HV | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us Case: TO247HV Mounting: THT On-state resistance: 50Ω Power dissipation: 195W Drain-source voltage: 3kV Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: standard power mosfet Polarisation: unipolar Reverse recovery time: 1.8µs Drain current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTT1N300P3HV | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO268HV; 1.8us Case: TO268HV Mounting: SMD On-state resistance: 50Ω Power dissipation: 195W Drain-source voltage: 3kV Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: standard power mosfet Polarisation: unipolar Reverse recovery time: 1.8µs Drain current: 1A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFN102N30P | IXYS |
Category: Transistor modules Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A Electrical mounting: screw Kind of channel: enhancement Mechanical mounting: screw Technology: HiPerFET™; Polar™ Case: SOT227B Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Polarisation: unipolar Gate charge: 224nC Reverse recovery time: 200ns On-state resistance: 33mΩ Gate-source voltage: ±30V Drain current: 86A Drain-source voltage: 300V Pulsed drain current: 250A Power dissipation: 570W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFP102N15T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB Kind of channel: enhancement Mounting: THT Case: TO220AB Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Polarisation: unipolar Gate charge: 87nC On-state resistance: 18mΩ Drain current: 102A Drain-source voltage: 150V Power dissipation: 455W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTK102N30P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 102A; 700W; TO264 Kind of channel: enhancement Mounting: THT Technology: PolarHT™ Case: TO264 Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 224nC Reverse recovery time: 250ns On-state resistance: 33mΩ Gate-source voltage: ±20V Drain current: 102A Drain-source voltage: 300V Power dissipation: 700W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXTP102N15T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns Kind of channel: enhancement Mounting: THT Case: TO220AB Type of transistor: N-MOSFET Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Polarisation: unipolar Gate charge: 87nC Reverse recovery time: 97ns On-state resistance: 18mΩ Drain current: 102A Drain-source voltage: 150V Power dissipation: 455W |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||
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IXTR102N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns Case: ISOPLUS247™ Mounting: THT Kind of package: tube Reverse recovery time: 450ns Power dissipation: 330W Gate charge: 152nC Polarisation: unipolar Features of semiconductor devices: ultra junction x-class Drain current: 54A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET On-state resistance: 33mΩ |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
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IXFT60N50P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 60A Power dissipation: 1.04kW Case: TO268 On-state resistance: 0.11Ω Mounting: SMD Gate charge: 96nC Kind of channel: enhancement Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| IXYH120N65B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 1.36kW; TO247-3 Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 760A Power dissipation: 1.36kW Collector-emitter voltage: 650V Type of transistor: IGBT Mounting: THT Kind of package: tube Gate charge: 250nC |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. |
| DSEK60-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26Ax2; Ifsm: 200A; TO247-3; tube; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 2.55V
Power dissipation: 125W
Reverse recovery time: 40ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26Ax2; Ifsm: 200A; TO247-3; tube; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 2.55V
Power dissipation: 125W
Reverse recovery time: 40ns
Technology: FRED
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 477.77 грн |
| IXTR40P50P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 312W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -22A
Reverse recovery time: 477ns
Gate charge: 205nC
On-state resistance: 0.26Ω
Gate-source voltage: ±20V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 312W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -22A
Reverse recovery time: 477ns
Gate charge: 205nC
On-state resistance: 0.26Ω
Gate-source voltage: ±20V
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1137.98 грн |
| 3+ | 940.96 грн |
| 10+ | 835.29 грн |
| IXTQ82N25P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 82A
Power dissipation: 500W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 82A
Power dissipation: 500W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 262 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 652.08 грн |
| 5+ | 509.90 грн |
| 10+ | 452.03 грн |
| 30+ | 435.26 грн |
| IXFB100N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 49mΩ
Gate-source voltage: ±30V
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1890W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 49mΩ
Gate-source voltage: ±30V
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1890W
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В кошику
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| IXFB100N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 49mΩ
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1.56kW
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 49mΩ
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1.56kW
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В кошику
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| IXGK400N30A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Case: TO264
Mounting: THT
Technology: GenX3™; PT
Type of transistor: IGBT
Turn-on time: 0.1µs
Gate charge: 560nC
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 300V
Power dissipation: 1kW
Pulsed collector current: 1.2kA
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Case: TO264
Mounting: THT
Technology: GenX3™; PT
Type of transistor: IGBT
Turn-on time: 0.1µs
Gate charge: 560nC
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 300V
Power dissipation: 1kW
Pulsed collector current: 1.2kA
Kind of package: tube
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В кошику
од. на суму грн.
| IXTN80N30L2 |
|
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 300V; 80A; SOT227B; screw; Idm: 200A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Kind of channel: enhancement
Technology: Linear L2™
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Reverse recovery time: 485ns
Gate charge: 660nC
On-state resistance: 38mΩ
Gate-source voltage: ±30V
Drain current: 80A
Pulsed drain current: 200A
Drain-source voltage: 300V
Power dissipation: 735W
Semiconductor structure: single transistor
Category: Transistor modules
Description: Module; single transistor; 300V; 80A; SOT227B; screw; Idm: 200A
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Kind of channel: enhancement
Technology: Linear L2™
Mechanical mounting: screw
Electrical mounting: screw
Polarisation: unipolar
Reverse recovery time: 485ns
Gate charge: 660nC
On-state resistance: 38mΩ
Gate-source voltage: ±30V
Drain current: 80A
Pulsed drain current: 200A
Drain-source voltage: 300V
Power dissipation: 735W
Semiconductor structure: single transistor
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В кошику
од. на суму грн.
| MIXA225RF1200TSF |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Topology: boost chopper; NTC thermistor
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Topology: boost chopper; NTC thermistor
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
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В кошику
од. на суму грн.
| MDNA425P2200PTSF |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 10kA
Load current: 425A
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 10kA
Load current: 425A
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| MDNA300P2200PTSF |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 8kA
Load current: 300A
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 8kA
Load current: 300A
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В кошику
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| MDNA600P2200PTSF |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 15kA
Load current: 600A
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 15kA
Load current: 600A
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| MIXA300PF1200TSF |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 325A
Pulsed collector current: 650A
Power dissipation: 1.5kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 325A
Pulsed collector current: 650A
Power dissipation: 1.5kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
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| MIXA450PF1200TSF |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.1kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.1kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
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| MIXG330PF1200TSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Case: SimBus F
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Technology: X2PT
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Case: SimBus F
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Technology: X2PT
Max. off-state voltage: 1.2kV
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| MIXG490PF1200TSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| MIXG330PF1200PTSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Case: SimBus F
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Technology: X2PT
Max. off-state voltage: 1.2kV
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Case: SimBus F
Topology: IGBT half-bridge; NTC thermistor
Type of semiconductor module: IGBT
Technology: X2PT
Max. off-state voltage: 1.2kV
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| MIXG490PF1200PTSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| VBE55-06NO7 |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 68A; Ifsm: 215A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 68A
Max. forward impulse current: 215A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 68A; Ifsm: 215A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 68A
Max. forward impulse current: 215A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1289.71 грн |
| 3+ | 1138.89 грн |
| 5+ | 1086.89 грн |
| 10+ | 1008.90 грн |
| DPG120C300QB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 60Ax2; Ifsm: 450A; TO3P; tube; 275W
Mounting: THT
Max. forward impulse current: 0.45kA
Max. forward voltage: 1.4V
Power dissipation: 275W
Technology: HiPerFRED™ 2nd Gen
Features of semiconductor devices: fast switching
Max. off-state voltage: 300V
Load current: 60A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 60Ax2; Ifsm: 450A; TO3P; tube; 275W
Mounting: THT
Max. forward impulse current: 0.45kA
Max. forward voltage: 1.4V
Power dissipation: 275W
Technology: HiPerFRED™ 2nd Gen
Features of semiconductor devices: fast switching
Max. off-state voltage: 300V
Load current: 60A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 718.01 грн |
| 3+ | 624.79 грн |
| 5+ | 594.60 грн |
| 10+ | 548.48 грн |
| IXGL75N250 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 110A; 430W; ISOPLUS264™
Type of transistor: IGBT
Power dissipation: 430W
Case: ISOPLUS264™
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 580A
Collector-emitter voltage: 2.5kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 110A; 430W; ISOPLUS264™
Type of transistor: IGBT
Power dissipation: 430W
Case: ISOPLUS264™
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 580A
Collector-emitter voltage: 2.5kV
товару немає в наявності
Мінімальне замовлення: 300 шт
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| IXYH30N450HV |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
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| IXYT30N450HV |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1542ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1542ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
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Мінімальне замовлення: 300 шт
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| IXFH96N20P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 145nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Power dissipation: 600W
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 145nC
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 648.47 грн |
| 5+ | 524.99 грн |
| 10+ | 479.71 грн |
| 20+ | 440.29 грн |
| IXTP48N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Reverse recovery time: 130ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Reverse recovery time: 130ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 299 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 332.36 грн |
| 3+ | 270.88 грн |
| 10+ | 216.37 грн |
| 50+ | 166.89 грн |
| IXFX230N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1.67kW
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 358nC
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 230A
Power dissipation: 1.67kW
Case: PLUS247™
On-state resistance: 7.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 358nC
Features of semiconductor devices: thrench gate power mosfet
на замовлення 108 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1679.88 грн |
| 3+ | 1442.48 грн |
| 5+ | 1356.10 грн |
| 10+ | 1218.56 грн |
| 30+ | 1198.43 грн |
| MEK600-04DA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 600A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Load current: 600A
Max. forward impulse current: 3kA
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 600A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Load current: 600A
Max. forward impulse current: 3kA
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| ZY180RM |
Виробник: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
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Мінімальне замовлення: 500 шт
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| ZY180R480 |
Виробник: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
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Мінімальне замовлення: 250 шт
В кошику
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| ZY180R350 |
Виробник: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
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Мінімальне замовлення: 250 шт
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| ZY180L350 |
Виробник: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
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Мінімальне замовлення: 250 шт
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| ZY180L480 |
|
Виробник: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
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Мінімальне замовлення: 250 шт
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| PLA191S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Mounting: SMT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 5kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Mounting: SMT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 5kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Type of relay: solid state
Manufacturer series: OptoMOS
на замовлення 199 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 663.82 грн |
| 100+ | 471.32 грн |
| PLA191STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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Мінімальне замовлення: 1000 шт
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| IXTP14N60PM |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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| IXTK150N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 150ns
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Мінімальне замовлення: 300 шт
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| IXTL2N450 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
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| IXTL2N470 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.7kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.7kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.7kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.7kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
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| DSP25-16AR |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; Ifsm: 300A; ISOPLUS247™; tube
Max. off-state voltage: 1.6kV
Load current: 28A x2
Kind of package: tube
Semiconductor structure: double series
Case: ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.23V
Power dissipation: 100W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; Ifsm: 300A; ISOPLUS247™; tube
Max. off-state voltage: 1.6kV
Load current: 28A x2
Kind of package: tube
Semiconductor structure: double series
Case: ISOPLUS247™
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.23V
Power dissipation: 100W
на замовлення 5 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 651.18 грн |
| DSP25-16A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; Ifsm: 300A; TO247-3; tube; 160W
Max. off-state voltage: 1.6kV
Load current: 25A
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.23V
Power dissipation: 160W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; Ifsm: 300A; TO247-3; tube; 160W
Max. off-state voltage: 1.6kV
Load current: 25A
Kind of package: tube
Semiconductor structure: double series
Case: TO247-3
Type of diode: rectifying
Mounting: THT
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.23V
Power dissipation: 160W
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| DSP25-16AT-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: double series
Case: D3PAK
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.16V
Power dissipation: 160W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: double series
Case: D3PAK
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.16V
Power dissipation: 160W
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| DSP25-16AT-TRL |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V
Max. off-state voltage: 1.6kV
Load current: 25A
Kind of package: reel; tape
Case: D3PAK; TO268AA
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 325A
Max. forward voltage: 1.23V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V
Max. off-state voltage: 1.6kV
Load current: 25A
Kind of package: reel; tape
Case: D3PAK; TO268AA
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 325A
Max. forward voltage: 1.23V
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Мінімальне замовлення: 400 шт
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| IXBH12N300 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 62nC
Turn-on time: 460ns
Turn-off time: 705ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™; FRED
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 62nC
Turn-on time: 460ns
Turn-off time: 705ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™; FRED
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Мінімальне замовлення: 300 шт
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| LF2101NTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Mounting: SMD
Type of integrated circuit: driver
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Mounting: SMD
Type of integrated circuit: driver
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
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Мінімальне замовлення: 2500 шт
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| LAA108S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
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| LAA108STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
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Мінімальне замовлення: 1000 шт
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| MKI75-06A7T |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| MWI75-06A7T |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| MKI75-06A7 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| MWI30-06A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 30A
Power dissipation: 140W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Application: motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 30A
Power dissipation: 140W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Application: motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| IXTA34N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Power dissipation: 540W
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Power dissipation: 540W
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
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| IXTP01N100D |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.1A; 25W; TO220AB; 2ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.1A
Power dissipation: 25W
Case: TO220AB
On-state resistance: 80Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 2ns
на замовлення 286 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 604.21 грн |
| 10+ | 509.90 грн |
| 50+ | 330.43 грн |
| IXTH1N300P3HV |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us
Case: TO247HV
Mounting: THT
On-state resistance: 50Ω
Power dissipation: 195W
Drain-source voltage: 3kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.8µs
Drain current: 1A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO247HV; 1.8us
Case: TO247HV
Mounting: THT
On-state resistance: 50Ω
Power dissipation: 195W
Drain-source voltage: 3kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.8µs
Drain current: 1A
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| IXTT1N300P3HV |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO268HV; 1.8us
Case: TO268HV
Mounting: SMD
On-state resistance: 50Ω
Power dissipation: 195W
Drain-source voltage: 3kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.8µs
Drain current: 1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 3kV; 1A; 195W; TO268HV; 1.8us
Case: TO268HV
Mounting: SMD
On-state resistance: 50Ω
Power dissipation: 195W
Drain-source voltage: 3kV
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 1.8µs
Drain current: 1A
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| IXFN102N30P |
|
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: HiPerFET™; Polar™
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Polarisation: unipolar
Gate charge: 224nC
Reverse recovery time: 200ns
On-state resistance: 33mΩ
Gate-source voltage: ±30V
Drain current: 86A
Drain-source voltage: 300V
Pulsed drain current: 250A
Power dissipation: 570W
Category: Transistor modules
Description: Module; single transistor; 300V; 86A; SOT227B; screw; Idm: 250A
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: HiPerFET™; Polar™
Case: SOT227B
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Polarisation: unipolar
Gate charge: 224nC
Reverse recovery time: 200ns
On-state resistance: 33mΩ
Gate-source voltage: ±30V
Drain current: 86A
Drain-source voltage: 300V
Pulsed drain current: 250A
Power dissipation: 570W
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| IXFP102N15T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 87nC
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 87nC
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
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| IXTK102N30P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 102A; 700W; TO264
Kind of channel: enhancement
Mounting: THT
Technology: PolarHT™
Case: TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 224nC
Reverse recovery time: 250ns
On-state resistance: 33mΩ
Gate-source voltage: ±20V
Drain current: 102A
Drain-source voltage: 300V
Power dissipation: 700W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 102A; 700W; TO264
Kind of channel: enhancement
Mounting: THT
Technology: PolarHT™
Case: TO264
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 224nC
Reverse recovery time: 250ns
On-state resistance: 33mΩ
Gate-source voltage: ±20V
Drain current: 102A
Drain-source voltage: 300V
Power dissipation: 700W
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| IXTP102N15T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 87nC
Reverse recovery time: 97ns
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Kind of channel: enhancement
Mounting: THT
Case: TO220AB
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Gate charge: 87nC
Reverse recovery time: 97ns
On-state resistance: 18mΩ
Drain current: 102A
Drain-source voltage: 150V
Power dissipation: 455W
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Мінімальне замовлення: 300 шт
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| IXTR102N65X2 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 450ns
Power dissipation: 330W
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 54A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 33mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 54A; 330W; ISOPLUS247™; 450ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Reverse recovery time: 450ns
Power dissipation: 330W
Gate charge: 152nC
Polarisation: unipolar
Features of semiconductor devices: ultra junction x-class
Drain current: 54A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
On-state resistance: 33mΩ
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| IXFT60N50P3 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
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| IXYH120N65B3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 1.36kW; TO247-3
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 760A
Power dissipation: 1.36kW
Collector-emitter voltage: 650V
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 250nC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 1.36kW; TO247-3
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 760A
Power dissipation: 1.36kW
Collector-emitter voltage: 650V
Type of transistor: IGBT
Mounting: THT
Kind of package: tube
Gate charge: 250nC
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Мінімальне замовлення: 300 шт
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