| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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DSEI30-06A | IXYS |
  Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 37A; Ifsm: 300A; TO247-2; tube; 125W Power dissipation: 125W Case: TO247-2 Mounting: THT Kind of package: tube Reverse recovery time: 35ns Max. forward impulse current: 0.3kA Max. forward voltage: 1.4V Technology: FRED Features of semiconductor devices: fast switching Max. off-state voltage: 0.6kV Load current: 37A Semiconductor structure: single diode Type of diode: rectifying |
на замовлення 52 шт: термін постачання 14-30 дні (днів) |
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| MD16200S-DKM2MM | IXYS |
Category: Diode modules Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S Type of semiconductor module: diode Semiconductor structure: common cathode; double Max. off-state voltage: 1.6kV Load current: 200A Case: package S Max. forward voltage: 1.5V Max. forward impulse current: 6.5kA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk Max. load current: 310A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MDMA210P1600YD | IXYS |
Category: Diode modules Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 210A Case: Y4-M6 Max. forward voltage: 1.04V Max. forward impulse current: 6.6kA Electrical mounting: screw Mechanical mounting: screw Kind of package: bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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LCA110 | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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LCA110S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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LCA110L | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: THT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| LCA110LSTR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
| LCA110STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
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LCA110LS | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DSEK60-06A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 300A; TO247-3; tube; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward impulse current: 0.3kA Case: TO247-3 Kind of package: tube Max. forward voltage: 1.4V Power dissipation: 125W Reverse recovery time: 35ns Technology: FRED |
на замовлення 180 шт: термін постачання 14-30 дні (днів) |
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DSEK60-12A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.2kV; 26Ax2; Ifsm: 200A; TO247-3; tube; 125W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 26A x2 Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Max. forward impulse current: 200A Case: TO247-3 Kind of package: tube Max. forward voltage: 2.55V Power dissipation: 125W Reverse recovery time: 40ns Technology: FRED |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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IXTR40P50P | IXYS |
Category: THT P channel transistors Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 312W Case: ISOPLUS247™ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: PolarP™ Drain-source voltage: -500V Drain current: -22A Reverse recovery time: 477ns Gate charge: 205nC On-state resistance: 0.26Ω Gate-source voltage: ±20V |
на замовлення 18 шт: термін постачання 14-30 дні (днів) |
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IXTQ82N25P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P Type of transistor: N-MOSFET Technology: PolarHT™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 82A Power dissipation: 500W Case: TO3P Gate-source voltage: ±20V On-state resistance: 38mΩ Mounting: THT Gate charge: 142nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
на замовлення 262 шт: термін постачання 14-30 дні (днів) |
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IXFB100N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™ Kind of package: tube Kind of channel: enhancement Mounting: THT Technology: HiPerFET™; Polar™ Type of transistor: N-MOSFET Case: PLUS264™ Polarisation: unipolar Reverse recovery time: 200ns Gate charge: 240nC On-state resistance: 49mΩ Gate-source voltage: ±30V Drain current: 100A Drain-source voltage: 500V Power dissipation: 1890W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXFB100N50Q3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™ Kind of package: tube Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Case: PLUS264™ Polarisation: unipolar Gate charge: 255nC On-state resistance: 49mΩ Drain current: 100A Drain-source voltage: 500V Power dissipation: 1.56kW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXGK400N30A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264 Case: TO264 Mounting: THT Technology: GenX3™; PT Type of transistor: IGBT Turn-on time: 0.1µs Gate charge: 560nC Turn-off time: 565ns Gate-emitter voltage: ±20V Collector current: 200A Collector-emitter voltage: 300V Power dissipation: 1kW Pulsed collector current: 1.2kA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTN80N30L2 | IXYS |
Category: Transistor modules Description: Module; single transistor; 300V; 80A; SOT227B; screw; Idm: 200A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 80A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 38mΩ Pulsed drain current: 200A Power dissipation: 735W Technology: Linear L2™ Kind of channel: enhancement Gate charge: 660nC Reverse recovery time: 485ns Gate-source voltage: ±30V Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MIXA225RF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Collector current: 250A Pulsed collector current: 500A Power dissipation: 1.1kW Topology: boost chopper; NTC thermistor Semiconductor structure: diode/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MDNA425P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Case: SimBus F Electrical mounting: Press-Fit Mechanical mounting: screw Kind of package: bulk Max. forward impulse current: 10kA Load current: 425A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MDNA300P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Case: SimBus F Electrical mounting: Press-Fit Mechanical mounting: screw Kind of package: bulk Max. forward impulse current: 8kA Load current: 300A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MDNA600P2200PTSF | IXYS |
Category: Diode modules Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 2.2kV Case: SimBus F Electrical mounting: Press-Fit Mechanical mounting: screw Kind of package: bulk Max. forward impulse current: 15kA Load current: 600A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MIXA300PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Collector current: 325A Pulsed collector current: 650A Power dissipation: 1.5kW Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT Application: fans; for pump; for UPS; motors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MIXA450PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: Sonic FRD™; XPT™ Gate-emitter voltage: ±20V Max. off-state voltage: 1.2kV Collector current: 450A Pulsed collector current: 900A Power dissipation: 2.1kW Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT Application: fans; for pump; for UPS; motors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MIXG330PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Case: SimBus F Type of semiconductor module: IGBT Technology: X2PT Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MIXG490PF1200TSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: X2PT Max. off-state voltage: 1.2kV Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MIXG330PF1200PTSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Case: SimBus F Type of semiconductor module: IGBT Technology: X2PT Mechanical mounting: screw Max. off-state voltage: 1.2kV Electrical mounting: Press-in PCB Semiconductor structure: transistor/transistor Topology: IGBT half-bridge; NTC thermistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MIXG490PF1200PTSF | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F Mechanical mounting: screw Case: SimBus F Electrical mounting: Press-in PCB Technology: X2PT Max. off-state voltage: 1.2kV Topology: IGBT half-bridge; NTC thermistor Semiconductor structure: transistor/transistor Type of semiconductor module: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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VBE55-06NO7 | IXYS |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 600V; If: 68A; Ifsm: 215A Type of bridge rectifier: single-phase Max. off-state voltage: 0.6kV Load current: 68A Max. forward impulse current: 215A Electrical mounting: THT Mechanical mounting: screw Version: module Case: ECO-PAC 1 Technology: FRED |
на замовлення 25 шт: термін постачання 14-30 дні (днів) |
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DPG120C300QB | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 300V; 60Ax2; Ifsm: 450A; TO3P; tube; 275W Max. forward impulse current: 0.45kA Max. forward voltage: 1.4V Power dissipation: 275W Technology: HiPerFRED™ 2nd Gen Features of semiconductor devices: fast switching Max. off-state voltage: 300V Load current: 60A x2 Kind of package: tube Semiconductor structure: common cathode; double Case: TO3P Type of diode: rectifying Reverse recovery time: 35ns Mounting: THT |
на замовлення 17 шт: термін постачання 14-30 дні (днів) |
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| IXGL75N250 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; 2.5kV; 110A; 430W; ISOPLUS264™ Type of transistor: IGBT Power dissipation: 430W Case: ISOPLUS264™ Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Collector current: 110A Pulsed collector current: 580A Collector-emitter voltage: 2.5kV |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | |||||||||||||
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IXYH30N450HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV Case: TO247HV Mounting: THT Kind of package: tube Features of semiconductor devices: high voltage Technology: XPT™ Gate charge: 88nC Turn-on time: 632ns Turn-off time: 1545ns Gate-emitter voltage: ±20V Collector current: 30A Power dissipation: 430W Pulsed collector current: 200A Collector-emitter voltage: 4.5kV Type of transistor: IGBT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXYT30N450HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV Case: TO268HV Mounting: SMD Kind of package: tube Features of semiconductor devices: high voltage Technology: XPT™ Gate charge: 88nC Turn-on time: 632ns Turn-off time: 1542ns Gate-emitter voltage: ±20V Collector current: 30A Power dissipation: 430W Pulsed collector current: 200A Collector-emitter voltage: 4.5kV Type of transistor: IGBT |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
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IXFH96N20P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 96A Case: TO247-3 On-state resistance: 24mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 600W Gate charge: 145nC |
на замовлення 300 шт: термін постачання 14-30 дні (днів) |
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IXTP48N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 48A Power dissipation: 250W Case: TO220AB On-state resistance: 50mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 60nC Reverse recovery time: 130ns Features of semiconductor devices: thrench gate power mosfet |
на замовлення 299 шт: термін постачання 14-30 дні (днів) |
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IXFX230N20T | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™ Drain-source voltage: 200V Drain current: 230A Case: PLUS247™ Polarisation: unipolar On-state resistance: 7.5mΩ Power dissipation: 1.67kW Kind of channel: enhancement Gate charge: 358nC Type of transistor: N-MOSFET Kind of package: tube Mounting: THT Features of semiconductor devices: thrench gate power mosfet |
на замовлення 103 шт: термін постачання 14-30 дні (днів) |
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| MEK600-04DA | IXYS |
Category: Diode modules Description: Module: diode; double,common cathode; 400V; If: 600A; Y4-M6; screw Kind of package: bulk Semiconductor structure: common cathode; double Type of semiconductor module: diode Mechanical mounting: screw Electrical mounting: screw Case: Y4-M6 Max. forward voltage: 1.2V Max. off-state voltage: 0.4kV Load current: 600A Max. forward impulse current: 3kA |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| ZY180RM | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
товару немає в наявності |
Мінімальне замовлення: 500 шт В кошику од. на суму грн. | |||||||||||||
| ZY180R480 | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||
| ZY180R350 | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||
| ZY180L350 | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||
| ZY180L480 | IXYS |
Category: Discrete semicon. modules - Unclass. Description: Accessories: cable with crimped terminals Type of accessories for semiconductors: cable with crimped terminals |
товару немає в наявності |
Мінімальне замовлення: 250 шт В кошику од. на суму грн. | |||||||||||||
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PLA191S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC Mounting: SMT Relay variant: 1-phase; current source Kind of output: MOSFET Body dimensions: 8.38x6.35x3.3mm Operating temperature: -40...85°C Contacts configuration: SPST-NO Insulation voltage: 5kV Turn-on time: 3ms Switched voltage: max. 400V AC; max. 400V DC Case: DIP6 Max. operating current: 250mA Turn-off time: 1ms Control current max.: 50mA On-state resistance: 8Ω Type of relay: solid state Manufacturer series: OptoMOS |
на замовлення 199 шт: термін постачання 14-30 дні (днів) |
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| PLA191STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC Type of relay: solid state Contacts configuration: SPST-NO Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 400V AC; max. 400V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 8Ω Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 3ms Turn-off time: 1ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
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IXTP14N60PM | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 75W Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Gate charge: 36nC Features of semiconductor devices: standard power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTK150N15P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 150A Power dissipation: 714W Case: TO264 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement Technology: PolarHT™ Reverse recovery time: 150ns |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
| IXTL2N450 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.5kV Drain current: 2A Power dissipation: 220W Case: ISOPLUS i5-pac™ On-state resistance: 20Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.75µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| IXTL2N470 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 4.7kV; 2A; 220W; ISOPLUS i5-pac™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 4.7kV Drain current: 2A Power dissipation: 220W Case: ISOPLUS i5-pac™ On-state resistance: 20Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 1.75µs |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
DSP25-16AR | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 28Ax2; Ifsm: 300A; ISOPLUS247™; tube Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 28A x2 Semiconductor structure: double series Max. forward impulse current: 0.3kA Case: ISOPLUS247™ Kind of package: tube Max. forward voltage: 1.23V Power dissipation: 100W |
на замовлення 4 шт: термін постачання 14-30 дні (днів) |
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 |
DSP25-16A | IXYS |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 25A; Ifsm: 300A; TO247-3; tube; 160W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 25A Semiconductor structure: double series Max. forward impulse current: 0.3kA Case: TO247-3 Kind of package: tube Max. forward voltage: 1.23V Power dissipation: 160W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
 |
DSP25-16AT-TUB | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.6kV Load current: 25A Semiconductor structure: double series Max. forward impulse current: 0.3kA Case: D3PAK Max. forward voltage: 1.16V Power dissipation: 160W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| DSP25-16AT-TRL | IXYS |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1.6kV Load current: 25A Max. forward impulse current: 325A Case: D3PAK; TO268AA Kind of package: reel; tape Max. forward voltage: 1.23V |
товару немає в наявності |
Мінімальне замовлення: 400 шт В кошику од. на суму грн. | |||||||||||||
|
|
IXBH12N300 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3 Features of semiconductor devices: high voltage Type of transistor: IGBT Mounting: THT Case: TO247-3 Kind of package: tube Gate charge: 62nC Turn-on time: 460ns Turn-off time: 705ns Collector current: 12A Gate-emitter voltage: ±20V Pulsed collector current: 100A Power dissipation: 160W Collector-emitter voltage: 3kV Technology: BiMOSFET™; FRED |
товару немає в наявності |
Мінімальне замовлення: 300 шт В кошику од. на суму грн. | ||||||||||||
 |
LF2101NTR | IXYS |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA Mounting: SMD Type of integrated circuit: driver Case: SO8 Kind of integrated circuit: gate driver; high-/low-side Topology: IGBT half-bridge; MOSFET half-bridge Kind of package: reel; tape Operating temperature: -40...125°C Output current: -600...290mA Number of channels: 2 Supply voltage: 10...20V Voltage class: 600V |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. | ||||||||||||
 |
LAA108S | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS Operating temperature: -40...85°C Case: DIP8 Kind of output: MOSFET Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Turn-off time: 3ms Turn-on time: 3ms Body dimensions: 9.66x6.35x3.3mm Control current max.: 50mA Max. operating current: 300mA On-state resistance: 8Ω Switched voltage: max. 100V AC; max. 100V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| LAA108STR | IXYS |
Category: One Phase Solid State Relays Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS Operating temperature: -40...85°C Case: DIP8 Kind of output: MOSFET Mounting: SMT Type of relay: solid state Contacts configuration: SPST-NO x2 Turn-off time: 3ms Turn-on time: 3ms Body dimensions: 9.66x6.35x3.3mm Control current max.: 50mA Max. operating current: 300mA On-state resistance: 8Ω Switched voltage: max. 100V AC; max. 100V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | |||||||||||||
| MKI75-06A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Application: for UPS; motors Max. off-state voltage: 0.6kV Technology: NPT Topology: H-bridge Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MWI75-06A7T | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Application: motors Max. off-state voltage: 0.6kV Technology: NPT Topology: IGBT three-phase bridge; NTC thermistor Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MKI75-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor Collector current: 60A Power dissipation: 280W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 120A Application: for UPS; motors Max. off-state voltage: 0.6kV Technology: NPT Topology: H-bridge; NTC thermistor Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MWI30-06A7 | IXYS |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Collector current: 30A Power dissipation: 140W Case: E2-Pack Gate-emitter voltage: ±20V Pulsed collector current: 60A Application: motors Max. off-state voltage: 0.6kV Technology: NPT Topology: IGBT three-phase bridge Type of semiconductor module: IGBT Electrical mounting: Press-in PCB Mechanical mounting: screw Semiconductor structure: transistor/transistor |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
 |
IXTA34N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Power dissipation: 540W Case: TO263 On-state resistance: 96mΩ Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Gate charge: 54nC Features of semiconductor devices: ultra junction x-class |
товару немає в наявності |
В кошику од. на суму грн. |
| DSEI30-06A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; Ifsm: 300A; TO247-2; tube; 125W
Power dissipation: 125W
Case: TO247-2
Mounting: THT
Kind of package: tube
Reverse recovery time: 35ns
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.4V
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Type of diode: rectifying
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 37A; Ifsm: 300A; TO247-2; tube; 125W
Power dissipation: 125W
Case: TO247-2
Mounting: THT
Kind of package: tube
Reverse recovery time: 35ns
Max. forward impulse current: 0.3kA
Max. forward voltage: 1.4V
Technology: FRED
Features of semiconductor devices: fast switching
Max. off-state voltage: 0.6kV
Load current: 37A
Semiconductor structure: single diode
Type of diode: rectifying
на замовлення 52 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 352.16 грн |
| 3+ | 267.03 грн |
| 5+ | 250.60 грн |
| 10+ | 249.78 грн |
| MD16200S-DKM2MM |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Max. load current: 310A
Category: Diode modules
Description: Module: diode; double,common cathode; 1.6kV; If: 200A; package S
Type of semiconductor module: diode
Semiconductor structure: common cathode; double
Max. off-state voltage: 1.6kV
Load current: 200A
Case: package S
Max. forward voltage: 1.5V
Max. forward impulse current: 6.5kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Max. load current: 310A
товару немає в наявності
В кошику
од. на суму грн.
| MDMA210P1600YD |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 210A; Y4-M6; Ufmax: 1.04V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 210A
Case: Y4-M6
Max. forward voltage: 1.04V
Max. forward impulse current: 6.6kA
Electrical mounting: screw
Mechanical mounting: screw
Kind of package: bulk
товару немає в наявності
В кошику
од. на суму грн.
| LCA110 |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| LCA110S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| LCA110L |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| LCA110LSTR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| LCA110STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| LCA110LS |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| DSEK60-06A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 300A; TO247-3; tube; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.3kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30Ax2; Ifsm: 300A; TO247-3; tube; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 0.3kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.4V
Power dissipation: 125W
Reverse recovery time: 35ns
Technology: FRED
на замовлення 180 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 476.92 грн |
| 2+ | 421.50 грн |
| 5+ | 381.24 грн |
| 10+ | 358.23 грн |
| DSEK60-12A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26Ax2; Ifsm: 200A; TO247-3; tube; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 2.55V
Power dissipation: 125W
Reverse recovery time: 40ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26Ax2; Ifsm: 200A; TO247-3; tube; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A x2
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Max. forward impulse current: 200A
Case: TO247-3
Kind of package: tube
Max. forward voltage: 2.55V
Power dissipation: 125W
Reverse recovery time: 40ns
Technology: FRED
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 468.08 грн |
| IXTR40P50P |
|
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 312W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -22A
Reverse recovery time: 477ns
Gate charge: 205nC
On-state resistance: 0.26Ω
Gate-source voltage: ±20V
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -500V; -22A; 312W; 477ns
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 312W
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: PolarP™
Drain-source voltage: -500V
Drain current: -22A
Reverse recovery time: 477ns
Gate charge: 205nC
On-state resistance: 0.26Ω
Gate-source voltage: ±20V
на замовлення 18 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1114.89 грн |
| 3+ | 921.87 грн |
| 10+ | 818.34 грн |
| IXTQ82N25P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 82A
Power dissipation: 500W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 250V; 82A; 500W; TO3P
Type of transistor: N-MOSFET
Technology: PolarHT™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 82A
Power dissipation: 500W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: THT
Gate charge: 142nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
на замовлення 262 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 638.85 грн |
| 5+ | 499.55 грн |
| 10+ | 442.86 грн |
| 30+ | 426.43 грн |
| IXFB100N50P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 49mΩ
Gate-source voltage: ±30V
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1890W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 100A; 1890W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 240nC
On-state resistance: 49mΩ
Gate-source voltage: ±30V
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1890W
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| IXFB100N50Q3 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 49mΩ
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1.56kW
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 100A; 1560W; PLUS264™
Kind of package: tube
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Case: PLUS264™
Polarisation: unipolar
Gate charge: 255nC
On-state resistance: 49mΩ
Drain current: 100A
Drain-source voltage: 500V
Power dissipation: 1.56kW
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| IXGK400N30A3 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Case: TO264
Mounting: THT
Technology: GenX3™; PT
Type of transistor: IGBT
Turn-on time: 0.1µs
Gate charge: 560nC
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 300V
Power dissipation: 1kW
Pulsed collector current: 1.2kA
Kind of package: tube
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 300V; 200A; 1kW; TO264
Case: TO264
Mounting: THT
Technology: GenX3™; PT
Type of transistor: IGBT
Turn-on time: 0.1µs
Gate charge: 560nC
Turn-off time: 565ns
Gate-emitter voltage: ±20V
Collector current: 200A
Collector-emitter voltage: 300V
Power dissipation: 1kW
Pulsed collector current: 1.2kA
Kind of package: tube
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| IXTN80N30L2 |
|
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 300V; 80A; SOT227B; screw; Idm: 200A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 80A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 38mΩ
Pulsed drain current: 200A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 660nC
Reverse recovery time: 485ns
Gate-source voltage: ±30V
Mechanical mounting: screw
Category: Transistor modules
Description: Module; single transistor; 300V; 80A; SOT227B; screw; Idm: 200A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 80A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 38mΩ
Pulsed drain current: 200A
Power dissipation: 735W
Technology: Linear L2™
Kind of channel: enhancement
Gate charge: 660nC
Reverse recovery time: 485ns
Gate-source voltage: ±30V
Mechanical mounting: screw
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| MIXA225RF1200TSF |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Topology: boost chopper; NTC thermistor
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper,NTC thermistor
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 250A
Pulsed collector current: 500A
Power dissipation: 1.1kW
Topology: boost chopper; NTC thermistor
Semiconductor structure: diode/transistor
Type of semiconductor module: IGBT
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| MDNA425P2200PTSF |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 10kA
Load current: 425A
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 425A; SimBus F; Ifsm: 10kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 10kA
Load current: 425A
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| MDNA300P2200PTSF |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 8kA
Load current: 300A
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 300A; SimBus F; Ifsm: 8kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 8kA
Load current: 300A
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| MDNA600P2200PTSF |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 15kA
Load current: 600A
Category: Diode modules
Description: Module: diode; double series; 2.2kV; If: 600A; SimBus F; Ifsm: 15kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 2.2kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 15kA
Load current: 600A
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| MIXA300PF1200TSF |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 325A
Pulsed collector current: 650A
Power dissipation: 1.5kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 325A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 325A
Pulsed collector current: 650A
Power dissipation: 1.5kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
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| MIXA450PF1200TSF |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.1kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 450A
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: Sonic FRD™; XPT™
Gate-emitter voltage: ±20V
Max. off-state voltage: 1.2kV
Collector current: 450A
Pulsed collector current: 900A
Power dissipation: 2.1kW
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Application: fans; for pump; for UPS; motors
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| MIXG330PF1200TSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Type of semiconductor module: IGBT
Technology: X2PT
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Type of semiconductor module: IGBT
Technology: X2PT
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
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| MIXG490PF1200TSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| MIXG330PF1200PTSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Type of semiconductor module: IGBT
Technology: X2PT
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Case: SimBus F
Type of semiconductor module: IGBT
Technology: X2PT
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge; NTC thermistor
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| MIXG490PF1200PTSF |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Mechanical mounting: screw
Case: SimBus F
Electrical mounting: Press-in PCB
Technology: X2PT
Max. off-state voltage: 1.2kV
Topology: IGBT half-bridge; NTC thermistor
Semiconductor structure: transistor/transistor
Type of semiconductor module: IGBT
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| VBE55-06NO7 |
|
Виробник: IXYS
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 68A; Ifsm: 215A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 68A
Max. forward impulse current: 215A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 68A; Ifsm: 215A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 68A
Max. forward impulse current: 215A
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Technology: FRED
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1263.54 грн |
| 3+ | 1115.77 грн |
| 5+ | 1064.83 грн |
| 10+ | 988.42 грн |
| DPG120C300QB |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 60Ax2; Ifsm: 450A; TO3P; tube; 275W
Max. forward impulse current: 0.45kA
Max. forward voltage: 1.4V
Power dissipation: 275W
Technology: HiPerFRED™ 2nd Gen
Features of semiconductor devices: fast switching
Max. off-state voltage: 300V
Load current: 60A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 60Ax2; Ifsm: 450A; TO3P; tube; 275W
Max. forward impulse current: 0.45kA
Max. forward voltage: 1.4V
Power dissipation: 275W
Technology: HiPerFRED™ 2nd Gen
Features of semiconductor devices: fast switching
Max. off-state voltage: 300V
Load current: 60A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO3P
Type of diode: rectifying
Reverse recovery time: 35ns
Mounting: THT
на замовлення 17 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 846.78 грн |
| 3+ | 697.56 грн |
| 5+ | 638.41 грн |
| 10+ | 550.49 грн |
| IXGL75N250 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 110A; 430W; ISOPLUS264™
Type of transistor: IGBT
Power dissipation: 430W
Case: ISOPLUS264™
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 580A
Collector-emitter voltage: 2.5kV
Category: THT IGBT transistors
Description: Transistor: IGBT; 2.5kV; 110A; 430W; ISOPLUS264™
Type of transistor: IGBT
Power dissipation: 430W
Case: ISOPLUS264™
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Collector current: 110A
Pulsed collector current: 580A
Collector-emitter voltage: 2.5kV
товару немає в наявності
Мінімальне замовлення: 300 шт
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| IXYH30N450HV |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Case: TO247HV
Mounting: THT
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1545ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
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| IXYT30N450HV |
|
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1542ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Case: TO268HV
Mounting: SMD
Kind of package: tube
Features of semiconductor devices: high voltage
Technology: XPT™
Gate charge: 88nC
Turn-on time: 632ns
Turn-off time: 1542ns
Gate-emitter voltage: ±20V
Collector current: 30A
Power dissipation: 430W
Pulsed collector current: 200A
Collector-emitter voltage: 4.5kV
Type of transistor: IGBT
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Мінімальне замовлення: 300 шт
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| IXFH96N20P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 600W
Gate charge: 145nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 96A; 600W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 96A
Case: TO247-3
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 600W
Gate charge: 145nC
на замовлення 300 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 675.13 грн |
| 5+ | 529.95 грн |
| 10+ | 477.37 грн |
| 20+ | 430.53 грн |
| 30+ | 415.74 грн |
| IXTP48N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Reverse recovery time: 130ns
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 48A; 250W; TO220AB; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 48A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 50mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 60nC
Reverse recovery time: 130ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 299 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 325.62 грн |
| 3+ | 265.39 грн |
| 10+ | 211.98 грн |
| 50+ | 163.50 грн |
| IXFX230N20T |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Drain-source voltage: 200V
Drain current: 230A
Case: PLUS247™
Polarisation: unipolar
On-state resistance: 7.5mΩ
Power dissipation: 1.67kW
Kind of channel: enhancement
Gate charge: 358nC
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 230A; 1670W; PLUS247™
Drain-source voltage: 200V
Drain current: 230A
Case: PLUS247™
Polarisation: unipolar
On-state resistance: 7.5mΩ
Power dissipation: 1.67kW
Kind of channel: enhancement
Gate charge: 358nC
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
на замовлення 103 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1838.68 грн |
| 3+ | 1599.71 грн |
| 5+ | 1534.80 грн |
| 10+ | 1443.60 грн |
| 30+ | 1310.50 грн |
| 60+ | 1227.51 грн |
| MEK600-04DA |
|
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 600A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Load current: 600A
Max. forward impulse current: 3kA
Category: Diode modules
Description: Module: diode; double,common cathode; 400V; If: 600A; Y4-M6; screw
Kind of package: bulk
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
Mechanical mounting: screw
Electrical mounting: screw
Case: Y4-M6
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Load current: 600A
Max. forward impulse current: 3kA
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| ZY180RM |
Виробник: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
товару немає в наявності
Мінімальне замовлення: 500 шт
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| ZY180R480 |
Виробник: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
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| ZY180R350 |
Виробник: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
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Мінімальне замовлення: 250 шт
В кошику
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| ZY180L350 |
Виробник: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
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| ZY180L480 |
|
Виробник: IXYS
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
Category: Discrete semicon. modules - Unclass.
Description: Accessories: cable with crimped terminals
Type of accessories for semiconductors: cable with crimped terminals
товару немає в наявності
Мінімальне замовлення: 250 шт
В кошику
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| PLA191S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Mounting: SMT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 5kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Type of relay: solid state
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Mounting: SMT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 5kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Type of relay: solid state
Manufacturer series: OptoMOS
на замовлення 199 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 650.35 грн |
| 100+ | 461.76 грн |
| PLA191STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
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| IXTP14N60PM |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
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| IXTK150N15P |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 150ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Power dissipation: 714W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Technology: PolarHT™
Reverse recovery time: 150ns
товару немає в наявності
Мінімальне замовлення: 300 шт
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| IXTL2N450 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.5kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.5kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
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| IXTL2N470 |
|
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.7kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.7kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 4.7kV; 2A; 220W; ISOPLUS i5-pac™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 4.7kV
Drain current: 2A
Power dissipation: 220W
Case: ISOPLUS i5-pac™
On-state resistance: 20Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 1.75µs
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| DSP25-16AR |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; Ifsm: 300A; ISOPLUS247™; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 28A x2
Semiconductor structure: double series
Max. forward impulse current: 0.3kA
Case: ISOPLUS247™
Kind of package: tube
Max. forward voltage: 1.23V
Power dissipation: 100W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 28Ax2; Ifsm: 300A; ISOPLUS247™; tube
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 28A x2
Semiconductor structure: double series
Max. forward impulse current: 0.3kA
Case: ISOPLUS247™
Kind of package: tube
Max. forward voltage: 1.23V
Power dissipation: 100W
на замовлення 4 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 889.26 грн |
| DSP25-16A |
|
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; Ifsm: 300A; TO247-3; tube; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: double series
Max. forward impulse current: 0.3kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.23V
Power dissipation: 160W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.6kV; 25A; Ifsm: 300A; TO247-3; tube; 160W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: double series
Max. forward impulse current: 0.3kA
Case: TO247-3
Kind of package: tube
Max. forward voltage: 1.23V
Power dissipation: 160W
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| DSP25-16AT-TUB |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: double series
Max. forward impulse current: 0.3kA
Case: D3PAK
Max. forward voltage: 1.16V
Power dissipation: 160W
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: double series
Max. forward impulse current: 0.3kA
Case: D3PAK
Max. forward voltage: 1.16V
Power dissipation: 160W
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| DSP25-16AT-TRL |
|
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 325A
Case: D3PAK; TO268AA
Kind of package: reel; tape
Max. forward voltage: 1.23V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 25A
Max. forward impulse current: 325A
Case: D3PAK; TO268AA
Kind of package: reel; tape
Max. forward voltage: 1.23V
товару немає в наявності
Мінімальне замовлення: 400 шт
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| IXBH12N300 |
|
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 62nC
Turn-on time: 460ns
Turn-off time: 705ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™; FRED
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 3kV; 12A; 160W; TO247-3
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 62nC
Turn-on time: 460ns
Turn-off time: 705ns
Collector current: 12A
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Power dissipation: 160W
Collector-emitter voltage: 3kV
Technology: BiMOSFET™; FRED
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику
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| LF2101NTR |
|
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Mounting: SMD
Type of integrated circuit: driver
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -600÷290mA
Mounting: SMD
Type of integrated circuit: driver
Case: SO8
Kind of integrated circuit: gate driver; high-/low-side
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -600...290mA
Number of channels: 2
Supply voltage: 10...20V
Voltage class: 600V
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
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| LAA108S |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
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| LAA108STR |
|
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 300mA; OptoMOS
Operating temperature: -40...85°C
Case: DIP8
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO x2
Turn-off time: 3ms
Turn-on time: 3ms
Body dimensions: 9.66x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 8Ω
Switched voltage: max. 100V AC; max. 100V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
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| MKI75-06A7T |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 600V; Ic: 60A
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| MWI75-06A7T |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: IGBT three-phase bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| MKI75-06A7 |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge,NTC thermistor
Collector current: 60A
Power dissipation: 280W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Application: for UPS; motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: H-bridge; NTC thermistor
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| MWI30-06A7 |
|
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 30A
Power dissipation: 140W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Application: motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Collector current: 30A
Power dissipation: 140W
Case: E2-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Application: motors
Max. off-state voltage: 0.6kV
Technology: NPT
Topology: IGBT three-phase bridge
Type of semiconductor module: IGBT
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
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| IXTA34N65X2 |
|
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Gate charge: 54nC
Features of semiconductor devices: ultra junction x-class
товару немає в наявності
В кошику
од. на суму грн.