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IXDN609YI IXDN609YI IXYS IXDD609CI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 788 шт:
термін постачання 14-30 дні (днів)
2+235.20 грн
10+184.54 грн
50+156.60 грн
100+147.29 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXDN604SI IXDN604SI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 877 шт:
термін постачання 14-30 дні (днів)
3+203.29 грн
50+159.99 грн
100+148.99 грн
200+138.83 грн
300+136.29 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXDN604SIATR IXDN604SIATR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IXDN604SITR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
MCMA110PD1800TB IXYS Littelfuse-Power-Semiconductors-MCMA110PD1800TB-Datasheet?assetguid=5C6AF596-D012-4339-B36B-1E6F5ED31A4F Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 110A; TO240AA; Ufmax: 1.5V
Gate current: 150mA
Max. forward voltage: 1.5V
Load current: 110A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 1.9kA
Type of semiconductor module: diode-thyristor
Case: TO240AA
товару немає в наявності
 Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
MCMA140PD1800TB IXYS MCMA140PD1800TB.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 140A; TO240AA; Ufmax: 1.5V; screw
Gate current: 150mA
Max. forward voltage: 1.5V
Load current: 140A
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Case: TO240AA
Mechanical mounting: screw
товару немає в наявності
 Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
MCMA200PD1800YB IXYS media?resourcetype=datasheets&itemid=294FA9BF-2490-4942-8301-8A50C78F70A7&filename=Littelfuse-Power-Semiconductors-MCMA200PD1800YB-Datasheet Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 200A; Y4-M6; Ufmax: 2.5V; Ifsm: 6kA
Gate current: 150mA
Max. forward voltage: 2.5V
Load current: 200A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 6kA
Type of semiconductor module: diode-thyristor
Case: Y4-M6
Mechanical mounting: screw
товару немає в наявності
 Мінімальне замовлення: 6 шт
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IXXR100N60B3H1 IXXR100N60B3H1 IXYS IXXR100N60B3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Mounting: THT
Case: PLUS247™
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 400W
Pulsed collector current: 440A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
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IXFT150N30X3HV IXFT150N30X3HV IXYS IXF_150N30X3_HV.pdf 300VProductBrief.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Mounting: SMD
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
1+1476.84 грн
3+1290.08 грн
5+1232.52 грн
В кошику  од. на суму  грн.
IXFH150N30X3 IXFH150N30X3 IXYS IXF_150N30X3_HV.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 167ns
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IXFK150N30X3 IXFK150N30X3 IXYS IXF_150N30X3_HV.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264
Mounting: THT
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
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MMIX1F230N20T IXYS littelfuse-discrete-mosfets-mmix1f230n20t-datasheet?assetguid=3fd9f0ca-b1d4-497b-a49b-1a4127553aba Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A
Drain-source voltage: 200V
Drain current: 156A
Case: SMPD
Polarisation: unipolar
On-state resistance: 8.3mΩ
Pulsed drain current: 630A
Power dissipation: 600W
Technology: GigaMOS™; HiPerFET™; Trench™
Kind of channel: enhancement
Gate charge: 358nC
Reverse recovery time: 200ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Mounting: SMD
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VUB135-22NO1 IXYS media?resourcetype=datasheets&itemid=633EF3F8-FCB9-440E-BF5F-9F1D8A39DFA4&filename=Littelfuse-Power-Semiconductors-VUB135-22NO1-Datasheet Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 80A
Type of semiconductor module: IGBT
Power dissipation: 445W
Mechanical mounting: screw
Pulsed collector current: 150A
Application: Inverter
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 80A
Topology: buck chopper; NTC thermistor; three-phase diode bridge
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IXTA44P15T-TRL IXTA44P15T-TRL IXYS littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 150V; 44A; 298W; D2PAK
Mounting: SMD
Power dissipation: 298W
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: P-MOSFET
Gate-source voltage: 15V
Case: D2PAK
On-state resistance: 65mΩ
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
LCA125 LCA125 IXYS LCA125.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
1+491.37 грн
10+358.92 грн
В кошику  од. на суму  грн.
LAA125S LAA125S IXYS LAA125.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
1+530.57 грн
50+412.25 грн
В кошику  од. на суму  грн.
LCA125S LCA125S IXYS LCA125.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
1+698.31 грн
50+424.95 грн
100+341.99 грн
В кошику  од. на суму  грн.
LAA125LS LAA125LS IXYS LAA125L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 63 шт:
термін постачання 14-30 дні (днів)
1+700.13 грн
10+520.60 грн
В кошику  од. на суму  грн.
LCA125L LCA125L IXYS LCA125L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 99 шт:
термін постачання 14-30 дні (днів)
1+709.25 грн
50+431.72 грн
В кошику  од. на суму  грн.
LAA125P LAA125P IXYS LAA125.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
1+555.18 грн
100+413.10 грн
В кошику  од. на суму  грн.
LAA125PL LAA125PL IXYS LAA125L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
1+962.68 грн
50+585.79 грн
100+468.97 грн
В кошику  од. на суму  грн.
LCA125LS LCA125LS IXYS LCA125L.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
1+709.25 грн
50+431.72 грн
100+347.07 грн
В кошику  од. на суму  грн.
DSP25-12AT-TRL IXYS Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet?assetguid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V
Max. off-state voltage: 1.2kV
Load current: 25A
Kind of package: reel; tape
Case: D3PAK; TO268AA
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 325A
Max. forward voltage: 1.23V
товару немає в наявності
 Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
DSEI25-06AS-TRL DSEI25-06AS-TRL IXYS Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 25A; 50ns; D2PAK,TO263AB; FRED
Mounting: SMD
Case: D2PAK; TO263AB
Kind of package: reel; tape
Technology: FRED
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
товару немає в наявності
 Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFP26N30X3 IXFP26N30X3 IXYS IXF_26N30X3.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB
On-state resistance: 66mΩ
Reverse recovery time: 105ns
Mounting: THT
Power dissipation: 170W
Gate charge: 22nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
на замовлення 208 шт:
термін постачання 14-30 дні (днів)
2+242.49 грн
25+173.53 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFP26N50P3 IXFP26N50P3 IXYS IXFH26N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 255 шт:
термін постачання 14-30 дні (днів)
1+601.67 грн
50+451.19 грн
В кошику  од. на суму  грн.
IXTP08N120P IXTP08N120P IXYS IXT_08N120P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.8A; 50W; TO220AB; 900ns
Mounting: THT
Case: TO220AB
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25Ω
Reverse recovery time: 900ns
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.8A
Kind of channel: enhancement
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IXTA08N120P IXTA08N120P IXYS IXT_08N120P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263
Mounting: SMD
Case: TO263
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 25Ω
Reverse recovery time: 900ns
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Technology: Polar™
Drain current: 0.8A
Kind of channel: enhancement
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IXGT16N170A IXGT16N170A IXYS IXGH(t)16N170A_H1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
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IXGT16N170AH1 IXGT16N170AH1 IXYS IXGH(t)16N170A_H1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
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IXTQ140N10P IXTQ140N10P IXYS IXTQ140N10P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of channel: enhancement
Reverse recovery time: 120ns
Polarisation: unipolar
Technology: PolarHT™
Kind of package: tube
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В кошику  од. на суму  грн.
IXTT140N10P IXTT140N10P IXYS IXTQ140N10P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Reverse recovery time: 120ns
Polarisation: unipolar
Technology: PolarHT™
Kind of package: tube
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В кошику  од. на суму  грн.
LDA100STR LDA100STR IXYS LDA100.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 33-300%@1mA; 50mA
Number of channels: 1
Mounting: SMD
Trigger current: 50mA
Collector-emitter voltage: 30V
CTR@If: 33-300%@1mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
на замовлення 720 шт:
термін постачання 14-30 дні (днів)
8+62.90 грн
10+49.35 грн
100+42.75 грн
400+38.77 грн
500+38.18 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
IXTA200N055T2 IXTA200N055T2 IXYS IXTA(P)200N055T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Mounting: SMD
Power dissipation: 360W
Gate charge: 109nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 200A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 4.2mΩ
Reverse recovery time: 49ns
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В кошику  од. на суму  грн.
IXTA64N10L2 IXTA64N10L2 IXYS IXTA(H,P)64N10L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO263
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
товару немає в наявності
В кошику  од. на суму  грн.
LAA127S LAA127S IXYS LAA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
В кошику  од. на суму  грн.
LAA127STR IXYS LAA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LBA127STR IXYS LBA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LBB127S LBB127S IXYS LBB127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
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В кошику  од. на суму  грн.
LBB127STR IXYS LBB127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCA127STR IXYS LCA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCB127STR IXYS LCB127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
PAA127STR IXYS PAA127.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 500µs
Switched voltage: max. 280V AC; max. 280V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 0.5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXGH25N160 IXGH25N160 IXYS IXGH(T)25N160.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
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MMIX2F60N50P3MMIX2F60N50P3
MMIX2F60N50P3MMIX2F60N50P3
 MMIX2F60N50P3 IXYS 238_MMIX2F60N50P3.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Type of transistor: N-MOSFET x2
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 320W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
1+3033.90 грн
3+2485.36 грн
10+2234.79 грн
20+2085.80 грн
В кошику  од. на суму  грн.
IXTN60N50L2 IXTN60N50L2 IXYS IXTN60N50L2.pdf Category: Transistor modules
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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В кошику  од. на суму  грн.
IXTK60N50L2 IXTK60N50L2 IXYS IXTK(X)60N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 980ns
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В кошику  од. на суму  грн.
IXFQ60N50P3 IXFQ60N50P3 IXYS IXF_60N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
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В кошику  од. на суму  грн.
IXTX60N50L2 IXTX60N50L2 IXYS IXTK(X)60N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 980ns
товару немає в наявності
В кошику  од. на суму  грн.
IXGH16N170 IXGH16N170 IXYS IXGH16N170-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
на замовлення 218 шт:
термін постачання 14-30 дні (днів)
1+936.24 грн
5+765.25 грн
10+705.14 грн
30+609.49 грн
60+606.10 грн
В кошику  од. на суму  грн.
IXFP16N50P3 IXFP16N50P3 IXYS IXF_16N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
2+327.27 грн
10+259.03 грн
50+228.56 грн
100+215.86 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFP16N50P IXFP16N50P IXYS IXF_16N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 279 шт:
термін постачання 14-30 дні (днів)
2+312.69 грн
10+266.65 грн
50+214.17 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTP16N50P IXTP16N50P IXYS IXTP16N50P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
на замовлення 230 шт:
термін постачання 14-30 дні (днів)
2+325.45 грн
10+190.47 грн
50+183.69 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFA16N50P3 IXFA16N50P3 IXYS IXF_16N50P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
3+183.69 грн
10+161.68 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXTH16N50D2 IXTH16N50D2 IXYS IXTH(T)16N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
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IXFH16N50P IXFH16N50P IXYS IXF_16N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
товару немає в наявності
В кошику  од. на суму  грн.
IXFH16N50P3 IXFH16N50P3 IXYS IXF_16N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ16N50P IXTQ16N50P IXYS IXTP16N50P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
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В кошику  од. на суму  грн.
IXTT16N50D2 IXTT16N50D2 IXYS IXTH(T)16N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
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IXFA16N50P IXFA16N50P IXYS IXF_16N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
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IXDN609YI IXDD609CI.pdf
IXDN609YI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO263-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO263-5
Output current: -9...9A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 788 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+235.20 грн
10+184.54 грн
50+156.60 грн
100+147.29 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXDN604SI IXDD604PI.pdf
IXDN604SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 877 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+203.29 грн
50+159.99 грн
100+148.99 грн
200+138.83 грн
300+136.29 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXDN604SIATR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
IXDN604SIATR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IXDN604SITR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
MCMA110PD1800TB Littelfuse-Power-Semiconductors-MCMA110PD1800TB-Datasheet?assetguid=5C6AF596-D012-4339-B36B-1E6F5ED31A4F
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 110A; TO240AA; Ufmax: 1.5V
Gate current: 150mA
Max. forward voltage: 1.5V
Load current: 110A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 1.9kA
Type of semiconductor module: diode-thyristor
Case: TO240AA
товару немає в наявності
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
MCMA140PD1800TB MCMA140PD1800TB.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 140A; TO240AA; Ufmax: 1.5V; screw
Gate current: 150mA
Max. forward voltage: 1.5V
Load current: 140A
Max. off-state voltage: 1.8kV
Type of semiconductor module: diode-thyristor
Case: TO240AA
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 36 шт
В кошику  од. на суму  грн.
MCMA200PD1800YB media?resourcetype=datasheets&itemid=294FA9BF-2490-4942-8301-8A50C78F70A7&filename=Littelfuse-Power-Semiconductors-MCMA200PD1800YB-Datasheet
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.8kV; 200A; Y4-M6; Ufmax: 2.5V; Ifsm: 6kA
Gate current: 150mA
Max. forward voltage: 2.5V
Load current: 200A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 6kA
Type of semiconductor module: diode-thyristor
Case: Y4-M6
Mechanical mounting: screw
товару немає в наявності
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
IXXR100N60B3H1 IXXR100N60B3H1.pdf
IXXR100N60B3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 100A; 400W; PLUS247™
Mounting: THT
Case: PLUS247™
Kind of package: tube
Turn-on time: 92ns
Gate charge: 143nC
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 100A
Power dissipation: 400W
Pulsed collector current: 440A
Collector-emitter voltage: 600V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
товару немає в наявності
В кошику  од. на суму  грн.
IXFT150N30X3HV IXF_150N30X3_HV.pdf 300VProductBrief.pdf
IXFT150N30X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO268
Mounting: SMD
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
на замовлення 15 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1476.84 грн
3+1290.08 грн
5+1232.52 грн
В кошику  од. на суму  грн.
IXFH150N30X3 IXF_150N30X3_HV.pdf 300VProductBrief.pdf
IXFH150N30X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 8.3mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 167ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFK150N30X3 IXF_150N30X3_HV.pdf 300VProductBrief.pdf
IXFK150N30X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 150A; 890W; TO264
Mounting: THT
Power dissipation: 890W
Gate charge: 254nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 150A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO264
On-state resistance: 8.3mΩ
Reverse recovery time: 167ns
товару немає в наявності
В кошику  од. на суму  грн.
MMIX1F230N20T littelfuse-discrete-mosfets-mmix1f230n20t-datasheet?assetguid=3fd9f0ca-b1d4-497b-a49b-1a4127553aba
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 200V; 156A; Idm: 630A
Drain-source voltage: 200V
Drain current: 156A
Case: SMPD
Polarisation: unipolar
On-state resistance: 8.3mΩ
Pulsed drain current: 630A
Power dissipation: 600W
Technology: GigaMOS™; HiPerFET™; Trench™
Kind of channel: enhancement
Gate charge: 358nC
Reverse recovery time: 200ns
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
VUB135-22NO1 media?resourcetype=datasheets&itemid=633EF3F8-FCB9-440E-BF5F-9F1D8A39DFA4&filename=Littelfuse-Power-Semiconductors-VUB135-22NO1-Datasheet
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.7kV; Ic: 80A
Type of semiconductor module: IGBT
Power dissipation: 445W
Mechanical mounting: screw
Pulsed collector current: 150A
Application: Inverter
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 80A
Topology: buck chopper; NTC thermistor; three-phase diode bridge
товару немає в наявності
В кошику  од. на суму  грн.
IXTA44P15T-TRL littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2
IXTA44P15T-TRL
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; 150V; 44A; 298W; D2PAK
Mounting: SMD
Power dissipation: 298W
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: P-MOSFET
Gate-source voltage: 15V
Case: D2PAK
On-state resistance: 65mΩ
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
LCA125 LCA125.pdf
LCA125
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 98 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+491.37 грн
10+358.92 грн
В кошику  од. на суму  грн.
LAA125S LAA125.pdf
LAA125S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+530.57 грн
50+412.25 грн
В кошику  од. на суму  грн.
LCA125S LCA125.pdf
LCA125S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+698.31 грн
50+424.95 грн
100+341.99 грн
В кошику  од. на суму  грн.
LAA125LS LAA125L.pdf
LAA125LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 63 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+700.13 грн
10+520.60 грн
В кошику  од. на суму  грн.
LCA125L LCA125L.pdf
LCA125L
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: THT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 99 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+709.25 грн
50+431.72 грн
В кошику  од. на суму  грн.
LAA125P LAA125.pdf
LAA125P
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+555.18 грн
100+413.10 грн
В кошику  од. на суму  грн.
LAA125PL LAA125L.pdf
LAA125PL
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP8
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 9.66x6.35x2.16mm
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+962.68 грн
50+585.79 грн
100+468.97 грн
В кошику  од. на суму  грн.
LCA125LS LCA125L.pdf
LCA125LS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 170mA; max.300VAC
Type of relay: solid state
Max. operating current: 0.17A
Switched voltage: max. 300V AC; max. 300V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Case: DIP6
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 16Ω
Mounting: SMT
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
на замовлення 100 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+709.25 грн
50+431.72 грн
100+347.07 грн
В кошику  од. на суму  грн.
DSP25-12AT-TRL Littelfuse-Power-Semiconductors-DSP25-12A-Datasheet?assetguid=e596c328-6ce1-40f9-b9cf-5c4bf362b9c8
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 25A; D3PAK,TO268AA; Ufmax: 1.23V
Max. off-state voltage: 1.2kV
Load current: 25A
Kind of package: reel; tape
Case: D3PAK; TO268AA
Type of diode: rectifying
Mounting: SMD
Max. forward impulse current: 325A
Max. forward voltage: 1.23V
товару немає в наявності
Мінімальне замовлення: 400 шт
В кошику  од. на суму  грн.
DSEI25-06AS-TRL
DSEI25-06AS-TRL
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 25A; 50ns; D2PAK,TO263AB; FRED
Mounting: SMD
Case: D2PAK; TO263AB
Kind of package: reel; tape
Technology: FRED
Max. off-state voltage: 0.6kV
Load current: 25A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 50ns
товару немає в наявності
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
IXFP26N30X3 IXF_26N30X3.pdf 300VProductBrief.pdf
IXFP26N30X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 26A; 170W; TO220AB
On-state resistance: 66mΩ
Reverse recovery time: 105ns
Mounting: THT
Power dissipation: 170W
Gate charge: 22nC
Polarisation: unipolar
Technology: HiPerFET™; X3-Class
Drain current: 26A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
на замовлення 208 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+242.49 грн
25+173.53 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFP26N50P3 IXFH26N50P3.pdf
IXFP26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 255 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+601.67 грн
50+451.19 грн
В кошику  од. на суму  грн.
IXTP08N120P IXT_08N120P.pdf
IXTP08N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 0.8A; 50W; TO220AB; 900ns
Mounting: THT
Case: TO220AB
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25Ω
Reverse recovery time: 900ns
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.8A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTA08N120P IXT_08N120P.pdf
IXTA08N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263
Mounting: SMD
Case: TO263
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 25Ω
Reverse recovery time: 900ns
Power dissipation: 50W
Gate charge: 14nC
Polarisation: unipolar
Technology: Polar™
Drain current: 0.8A
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXGT16N170A IXGH(t)16N170A_H1.pdf
IXGT16N170A
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
IXGT16N170AH1 IXGH(t)16N170A_H1.pdf
IXGT16N170AH1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO268
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ140N10P IXTQ140N10P-DTE.pdf
IXTQ140N10P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO3P
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO3P
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 155nC
Kind of channel: enhancement
Reverse recovery time: 120ns
Polarisation: unipolar
Technology: PolarHT™
Kind of package: tube
товару немає в наявності
В кошику  од. на суму  грн.
IXTT140N10P IXTQ140N10P-DTE.pdf
IXTT140N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 100V; 140A; 600W; TO268
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Drain current: 140A
Power dissipation: 600W
Case: TO268
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 155nC
Kind of channel: enhancement
Reverse recovery time: 120ns
Polarisation: unipolar
Technology: PolarHT™
Kind of package: tube
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LDA100STR LDA100.pdf
LDA100STR
Виробник: IXYS
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; Uinsul: 3.75kV; CTR@If: 33-300%@1mA; 50mA
Number of channels: 1
Mounting: SMD
Trigger current: 50mA
Collector-emitter voltage: 30V
CTR@If: 33-300%@1mA
Insulation voltage: 3.75kV
Type of optocoupler: optocoupler
Turn-on time: 7µs
Turn-off time: 20µs
на замовлення 720 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
8+62.90 грн
10+49.35 грн
100+42.75 грн
400+38.77 грн
500+38.18 грн
Мінімальне замовлення: 8 шт
В кошику  од. на суму  грн.
IXTA200N055T2 IXTA(P)200N055T2.pdf
IXTA200N055T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 200A; 360W; TO263; 49ns
Mounting: SMD
Power dissipation: 360W
Gate charge: 109nC
Polarisation: unipolar
Features of semiconductor devices: thrench gate power mosfet
Drain current: 200A
Kind of channel: enhancement
Drain-source voltage: 55V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO263
On-state resistance: 4.2mΩ
Reverse recovery time: 49ns
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IXTA64N10L2 IXTA(H,P)64N10L2.pdf
IXTA64N10L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO263; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO263
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 180ns
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LAA127S LAA127.pdf
LAA127S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
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В кошику  од. на суму  грн.
LAA127STR LAA127.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LBA127STR LBA127.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 200mA
Operating temperature: -40...85°C
Body dimensions: 9.66x6.35x3.3mm
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LBB127S LBB127.pdf
LBB127S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
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LBB127STR LBB127.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NC x2
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCA127STR LCA127.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.350VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 350V AC; max. 350V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
LCB127STR LCB127.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 200mA; max.250VAC
Operating temperature: -40...85°C
Body dimensions: 8.38x6.35x3.3mm
Contacts configuration: SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 200mA
Turn-off time: 5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
PAA127STR PAA127.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 200mA; OptoMOS
Operating temperature: -40...85°C
Body dimensions: 9.65x6.35x3.3mm
Contacts configuration: SPST-NO x2
Insulation voltage: 3.75kV
Turn-on time: 500µs
Switched voltage: max. 280V AC; max. 280V DC
Case: DIP8
Max. operating current: 200mA
Turn-off time: 0.5ms
Control current max.: 50mA
On-state resistance: 10Ω
Type of relay: solid state
Mounting: SMT
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
IXGH25N160 IXGH(T)25N160.pdf
IXGH25N160
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.6kV; 25A; 300W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.6kV
Collector current: 25A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Turn-on time: 283ns
Turn-off time: 526ns
Features of semiconductor devices: high voltage
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MMIX2F60N50P3 238_MMIX2F60N50P3.pdf
MMIX2F60N50P3MMIX2F60N50P3
MMIX2F60N50P3MMIX2F60N50P3
Виробник: IXYS
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Polar3™; unipolar; 500V; 30A; Idm: 150A
Type of transistor: N-MOSFET x2
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Pulsed drain current: 150A
Power dissipation: 320W
Case: SMPD
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 96nC
Kind of channel: enhancement
Reverse recovery time: 250ns
на замовлення 20 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+3033.90 грн
3+2485.36 грн
10+2234.79 грн
20+2085.80 грн
В кошику  од. на суму  грн.
IXTN60N50L2 IXTN60N50L2.pdf
IXTN60N50L2
Виробник: IXYS
Category: Transistor modules
Description: Module; single transistor; 500V; 53A; SOT227B; screw; Idm: 150A
Technology: Linear L2™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 53A
Pulsed drain current: 150A
Power dissipation: 735W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.1Ω
Gate charge: 610nC
Kind of channel: enhancement
Reverse recovery time: 980ns
Semiconductor structure: single transistor
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
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IXTK60N50L2 IXTK(X)60N50L2.pdf
IXTK60N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; TO264; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: TO264
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 980ns
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IXFQ60N50P3 IXF_60N50P3.pdf
IXFQ60N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 1040W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 1.04kW
Case: TO3P
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 96nC
Kind of channel: enhancement
Kind of package: tube
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IXTX60N50L2 IXTK(X)60N50L2.pdf
IXTX60N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 60A; 960W; PLUS247™; 980ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 60A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 610nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 980ns
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IXGH16N170 IXGH16N170-DTE.pdf
IXGH16N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
на замовлення 218 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+936.24 грн
5+765.25 грн
10+705.14 грн
30+609.49 грн
60+606.10 грн
В кошику  од. на суму  грн.
IXFP16N50P3 IXF_16N50P3.pdf
IXFP16N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
на замовлення 195 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+327.27 грн
10+259.03 грн
50+228.56 грн
100+215.86 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFP16N50P IXF_16N50P.pdf
IXFP16N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 279 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+312.69 грн
10+266.65 грн
50+214.17 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTP16N50P IXTP16N50P-DTE.pdf
IXTP16N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
на замовлення 230 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+325.45 грн
10+190.47 грн
50+183.69 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFA16N50P3 IXF_16N50P3.pdf
IXFA16N50P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
на замовлення 31 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+183.69 грн
10+161.68 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXTH16N50D2 IXTH(T)16N50D2.pdf
IXTH16N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO247-3; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
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IXFH16N50P IXF_16N50P.pdf
IXFH16N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Technology: HiPerFET™; Polar™
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IXFH16N50P3 IXF_16N50P3.pdf
IXFH16N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 500V; 16A; 330W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 330W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar3™
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IXTQ16N50P IXTP16N50P-DTE.pdf
IXTQ16N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 500V; 16A; 300W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Technology: PolarHT™
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IXTT16N50D2 IXTH(T)16N50D2.pdf
IXTT16N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; 695W; TO268; 130ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 695W
Case: TO268
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 130ns
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IXFA16N50P IXF_16N50P.pdf
IXFA16N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 16A; 300W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: TO263
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
товару немає в наявності
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