Продукція > IXYS > Всі товари виробника IXYS (16043) > Сторінка 254 з 268

Обрати Сторінку:   [  << Попередня Сторінка ]  1 26 52 78 104 130 156 182 208 234 249 250 251 252 253 254 255 256 257 258 259 260 268  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
CPC1945Y CPC1945Y IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4384923AE38BF&compId=CPC1945Y.pdf?ci_sign=a1bb4db4c3f93e15666e949682f73ba24088c71a Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 120V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 0.34Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Switching method: zero voltage switching
Turn-on time: 5ms
Turn-off time: 3ms
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
2+228.73 грн
10+192.71 грн
25+168.11 грн
75+132.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH24N80P IXFH24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFK24N80P IXFK24N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+870.78 грн
В кошику  од. на суму  грн.
IXFK27N80Q IXFK27N80Q IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFK34N80 IXFK34N80 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5531C0BEB820&compId=IXFK(X)34N80.pdf?ci_sign=c21449cd8db7a186cc87835ff14b3420826840c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFK44N80P IXFK44N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 255 шт:
термін постачання 21-30 дні (днів)
1+1369.75 грн
3+1206.31 грн
5+1150.54 грн
10+1084.12 грн
В кошику  од. на суму  грн.
IXFK44N80Q3 IXFK44N80Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D555DA4D32F820&compId=IXFK(X)44N80Q3.pdf?ci_sign=dd049728423ed64df76c419a8fd12eba8ab2dd10 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+1193.12 грн
В кошику  од. на суму  грн.
MXHV9910B MXHV9910B IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
товару немає в наявності
В кошику  од. на суму  грн.
MXHV9910BE IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8-EP
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
товару немає в наявності
В кошику  од. на суму  грн.
MXHV9910BETR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO8-EP
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
товару немає в наявності
В кошику  од. на суму  грн.
MXHV9910BTR MXHV9910BTR IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561 Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO8
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
товару немає в наявності
В кошику  од. на суму  грн.
IXTA08N50D2 IXTA08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP08N50D2 IXTP08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
на замовлення 264 шт:
термін постачання 21-30 дні (днів)
3+204.01 грн
10+153.35 грн
25+119.73 грн
50+109.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTY08N50D2 IXTY08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
товару немає в наявності
В кошику  од. на суму  грн.
IXKC15N60C5 IXYS media?resourcetype=datasheets&itemid=350D5F86-1037-44C7-AFE1-4B49E34623C5&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Super-Junction-IXKC15N60C5-Datasheet.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
товару немає в наявності
В кошику  од. на суму  грн.
CLA100PD1200NA CLA100PD1200NA IXYS Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 40/80mA
Threshold on-voltage: 0.83V
Max. forward voltage: 1.21V
Load current: 100A
Max. forward impulse current: 1.5kA
Max. load current: 150A
Kind of package: bulk
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+2505.47 грн
В кошику  од. на суму  грн.
CPC1135N CPC1135N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20E20C7&compId=CPC1135N.pdf?ci_sign=4a18a2dbc91e1ae370bd5a8a3cd54dcab1a8fe21 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 35Ω
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 350V AC; max. 350V DC
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
4+140.42 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC1968J CPC1968J IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA92FB94A0B59FE0C4&compId=CPC1968.pdf?ci_sign=160af4d4d6569d9dbcf0943ab2d83726dac949bb Category: DC Solid State Relays
Description: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ
Type of relay: solid state
Control voltage: 0.9...1.56V DC
Control current: 10mA
Max. operating current: 5A
Switched voltage: max. 500V DC
Relay variant: Photo MOSFET
On-state resistance: 0.35Ω
Mounting: THT
Operate time: 4.6ms
Release time: 0.07ms
Operating temperature: -40...85°C
Body dimensions: 26.2x20x5mm
Control current max.: 100mA
на замовлення 115 шт:
термін постачання 21-30 дні (днів)
1+1606.43 грн
50+1379.34 грн
100+1344.08 грн
В кошику  од. на суму  грн.
IXTX90N25L2 IXTX90N25L2 IXYS IXTK(X)90N25L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 266ns
Features of semiconductor devices: linear power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTX90P20P IXTX90P20P IXYS IXT_90P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: PLUS247™
Type of transistor: P-MOSFET
на замовлення 138 шт:
термін постачання 21-30 дні (днів)
1+1195.77 грн
5+1029.99 грн
10+998.83 грн
В кошику  од. на суму  грн.
MCD26-08IO1B MCD26-08IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFCCD2F11B1C0C4&compId=MCD26-08io1B.pdf?ci_sign=9a6942d374cdf75d8a1ab1d84902414ef95e38c5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 0.8kV
Load current: 27A
Max. forward impulse current: 520A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+1435.10 грн
В кошику  од. на суму  грн.
MCD56-08IO1B MCD56-08IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF1B629813A0C4&compId=MCD56-08io1B.pdf?ci_sign=821060ef1b8511e1aedf945e2c2f1ad91acdf64e pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Max. off-state voltage: 0.8kV
Load current: 60A
Max. forward impulse current: 1.5kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.24V
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. load current: 100A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+2177.82 грн
3+1786.09 грн
10+1608.95 грн
В кошику  од. на суму  грн.
MCD26-12IO1B MCD26-12IO1B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED997E95549EA455820&compId=MCD26-12io1B.pdf?ci_sign=4127869398e286376682561c16b0525127e15c21 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 1.2kV
Load current: 27A
Max. forward impulse current: 0.44kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+1667.37 грн
3+1390.82 грн
10+1292.41 грн
В кошику  од. на суму  грн.
IXTP150N15X4 IXTP150N15X4 IXYS IXTH(P)150N15X4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Gate charge: 105nC
Reverse recovery time: 100ns
On-state resistance: 7.2mΩ
Power dissipation: 480W
на замовлення 205 шт:
термін постачання 21-30 дні (днів)
1+644.69 грн
3+541.24 грн
10+443.65 грн
25+378.87 грн
В кошику  од. на суму  грн.
IXTQ150N15P IXTQ150N15P IXYS IXTK150N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Case: TO3P
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PolarHT™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Gate charge: 0.19µC
Reverse recovery time: 150ns
On-state resistance: 13mΩ
Power dissipation: 714W
Gate-source voltage: ±20V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+502.51 грн
В кошику  од. на суму  грн.
IXTA3N150HV IXTA3N150HV IXYS IXTA3N150HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Gate charge: 38.6nC
Reverse recovery time: 900ns
Power dissipation: 250W
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
1+607.60 грн
5+521.56 грн
В кошику  од. на суму  грн.
IXFP10N60P IXFP10N60P IXYS IXFA(P)10N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
2+236.68 грн
3+197.63 грн
10+174.67 грн
50+158.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP10N60P IXTP10N60P IXYS IXTP10N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Gate charge: 32nC
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXFN110N60P3 IXFN110N60P3 IXYS IXFN110N60P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate charge: 254nC
Reverse recovery time: 250ns
Pulsed drain current: 275A
товару немає в наявності
В кошику  од. на суму  грн.
IXFA10N60P IXFA10N60P IXYS IXFA(P)10N60P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFB110N60P3 IXFB110N60P3 IXYS IXFB110N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 254nC
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
CPC9909NTR CPC9909NTR IXYS CPC9909.pdf Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
CPC9909N CPC9909N IXYS CPC9909.pdf Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 2mA
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
Output current: 2mA
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
2+233.15 грн
5+176.31 грн
10+153.35 грн
25+125.47 грн
50+108.25 грн
100+98.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC9909NE CPC9909NE IXYS CPC9909.pdf Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
на замовлення 1016 шт:
термін постачання 21-30 дні (днів)
3+211.07 грн
10+122.19 грн
25+104.15 грн
50+99.23 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC9909NETR IXYS CPC9909.pdf Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
IXFN44N80P IXFN44N80P IXYS IXFN44N80P.pdf description Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 200nC
Reverse recovery time: 250ns
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+2681.21 грн
3+2201.04 грн
В кошику  од. на суму  грн.
IXFN44N80Q3 IXFN44N80Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9F937B909F820&compId=IXFN44N80Q3.pdf?ci_sign=fd80aa4819d75a8d19acc0bc3f82bfef6bd57b62 Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
IXTP60N10T IXTP60N10T IXYS IXTA(P)60N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Gate charge: 49nC
Reverse recovery time: 59ns
On-state resistance: 18mΩ
Power dissipation: 176W
Kind of package: tube
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
на замовлення 261 шт:
термін постачання 21-30 дні (днів)
3+158.97 грн
10+127.11 грн
25+104.15 грн
50+93.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFN360N10T IXFN360N10T IXYS IXFN360N10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 360A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.6mΩ
Pulsed drain current: 900A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 525nC
Reverse recovery time: 130ns
Kind of channel: enhancement
на замовлення 181 шт:
термін постачання 21-30 дні (днів)
1+1855.48 грн
5+1464.62 грн
10+1418.70 грн
В кошику  од. на суму  грн.
IXTP160N10T IXTP160N10T IXYS IXT_160N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Mounting: THT
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Gate charge: 132nC
Reverse recovery time: 60ns
On-state resistance: 7mΩ
Power dissipation: 430W
Gate-source voltage: ±20V
Kind of package: tube
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
на замовлення 254 шт:
термін постачання 21-30 дні (днів)
2+356.79 грн
10+271.44 грн
50+241.10 грн
100+227.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN44N100Q3 IXFN44N100Q3 IXYS IXFN44N100Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 264nC
Reverse recovery time: 300ns
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+5928.52 грн
В кошику  од. на суму  грн.
DSA1-12D DSA1-12D IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82836F916CE143&compId=DSA1-18D.pdf?ci_sign=452a5902ddb9885d20bbcd189749dd424e83331a Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Load current: 2.3A
Max. forward impulse current: 110A
Max. off-state voltage: 1.2kV
Mounting: THT
Case: FP-Case
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward voltage: 1.34V
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
2+263.18 грн
10+226.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTH48N65X2 IXTH48N65X2 IXYS IXTH48N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
на замовлення 253 шт:
термін постачання 21-30 дні (днів)
1+655.29 грн
10+479.73 грн
В кошику  од. на суму  грн.
IXFH60N65X2 IXFH60N65X2 IXYS IXFH60N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Pulsed drain current: 120A
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Features of semiconductor devices: ultra junction x-class
Gate charge: 108nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFH60N65X2-4 IXFH60N65X2-4 IXYS IXFH60N65X2-4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-4
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Gate charge: 108nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFT60N65X2HV IXFT60N65X2HV IXYS IXFT60N65X2HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO268
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Gate charge: 108nC
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
1+727.71 грн
В кошику  од. на суму  грн.
IXXH60N65B4 IXXH60N65B4 IXYS IXXH60N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 536W
Collector current: 60A
Pulsed collector current: 265A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 86nC
Turn-on time: 94ns
Turn-off time: 208ns
на замовлення 187 шт:
термін постачання 21-30 дні (днів)
1+534.30 грн
3+446.11 грн
10+394.45 грн
30+354.27 грн
В кошику  од. на суму  грн.
IXXH60N65B4H1 IXXH60N65B4H1 IXYS IXXH60N65B4H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 536W
Collector current: 60A
Pulsed collector current: 265A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 86nC
Turn-on time: 94ns
Turn-off time: 208ns
на замовлення 293 шт:
термін постачання 21-30 дні (днів)
1+961.74 грн
3+811.86 грн
10+715.09 грн
30+642.11 грн
В кошику  од. на суму  грн.
IXXH60N65C4 IXXH60N65C4 IXYS IXXH60N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 536W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 86nC
Turn-on time: 110ns
Turn-off time: 164ns
товару немає в наявності
В кошику  од. на суму  грн.
IXXK160N65B4 IXXK160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Case: TO264
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 860A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 425nC
Turn-on time: 93ns
Turn-off time: 380ns
на замовлення 293 шт:
термін постачання 21-30 дні (днів)
1+1430.69 грн
3+1276.83 грн
10+1256.33 грн
В кошику  од. на суму  грн.
IXXK160N65C4 IXYS DS100516AIXXKX160N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Case: TO264
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 320A
Collector-emitter voltage: 650V
Technology: GenX4™; XPT™
Gate charge: 422nC
Turn-on time: 52ns
Turn-off time: 197ns
товару немає в наявності
В кошику  од. на суму  грн.
IXXX160N65B4 IXXX160N65B4 IXYS IXXK(x)160N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 860A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 425nC
Turn-on time: 93ns
Turn-off time: 380ns
товару немає в наявності
В кошику  од. на суму  грн.
IXXX160N65C4 IXYS littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38 Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 320A
Collector-emitter voltage: 650V
Technology: GenX4™; XPT™
Gate charge: 422nC
Turn-on time: 52ns
Turn-off time: 197ns
товару немає в наявності
В кошику  од. на суму  грн.
DSEC16-06A DSEC16-06A IXYS Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet?assetguid=508d2251-0e5c-48cf-8629-cef1a4793aa5 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.1V
Max. off-state voltage: 0.6kV
Load current: 10A x2
Max. forward impulse current: 50A
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
на замовлення 68 шт:
термін постачання 21-30 дні (днів)
3+185.33 грн
10+161.55 грн
50+121.37 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DSEC16-06AC DSEC16-06AC IXYS Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet?assetguid=727180e8-2052-4708-a088-44156766e2f7 Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Max. forward voltage: 2.1V
Max. off-state voltage: 0.6kV
Load current: 10A x2
Max. forward impulse current: 50A
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: ISOPLUS220™
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
товару немає в наявності
В кошику  од. на суму  грн.
IXTA160N04T2 IXTA160N04T2 IXYS IXTA(P)160N04T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP160N04T2 IXTP160N04T2 IXYS IXTA(P)160N04T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH46N65X2 IXFH46N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F8F820&compId=IXFH46N65X2.pdf?ci_sign=18d8737ea270a8587aa3e2cf370bec98f3fe9809 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
на замовлення 220 шт:
термін постачання 21-30 дні (днів)
1+479.54 грн
В кошику  од. на суму  грн.
CPC1150N CPC1150N IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A3B9CF7BD978BF&compId=CPC1150N.pdf?ci_sign=c821c2d7d5de511af558a9ef727e8d94eaa1df7b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 50Ω
Turn-off time: 2ms
Turn-on time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 350V AC; max. 350V DC
на замовлення 504 шт:
термін постачання 21-30 дні (днів)
2+228.73 грн
100+177.13 грн
500+141.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH14N80P IXFH14N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
CPC1945Y pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4384923AE38BF&compId=CPC1945Y.pdf?ci_sign=a1bb4db4c3f93e15666e949682f73ba24088c71a
CPC1945Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 100mA; 1000mA; max.120VAC; OptoMOS
Type of relay: solid state
Max. operating current: 1A
Switched voltage: max. 120V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase
On-state resistance: 0.34Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Switching method: zero voltage switching
Turn-on time: 5ms
Turn-off time: 3ms
Body dimensions: 19.2x6.35x3.3mm
Control current max.: 100mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 96 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+228.73 грн
10+192.71 грн
25+168.11 грн
75+132.85 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91
IXFH24N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFK24N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CCB94722F39820&compId=IXFH(K%2CT)24N80P.pdf?ci_sign=de1ae4e3915cc5ae12d6efcc3663703594898c91
IXFK24N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 650W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 24A
Power dissipation: 650W
Case: TO264
On-state resistance: 0.4Ω
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+870.78 грн
В кошику  од. на суму  грн.
IXFK27N80Q pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd
IXFK27N80Q
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: TO264
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFK34N80 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5531C0BEB820&compId=IXFK(X)34N80.pdf?ci_sign=c21449cd8db7a186cc87835ff14b3420826840c0
IXFK34N80
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 34A; 568W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 34A
Power dissipation: 568W
Case: TO264
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFK44N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D55A88536A9820&compId=IXFK(X)44N80P.pdf?ci_sign=fe7a22c35d7909b220aeebf7fe0c0b6a1d419d2d
IXFK44N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1040W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.04kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 198nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 255 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1369.75 грн
3+1206.31 грн
5+1150.54 грн
10+1084.12 грн
В кошику  од. на суму  грн.
IXFK44N80Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D555DA4D32F820&compId=IXFK(X)44N80Q3.pdf?ci_sign=dd049728423ed64df76c419a8fd12eba8ab2dd10
IXFK44N80Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 44A; 1250W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 44A
Power dissipation: 1.25kW
Case: TO264
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 185nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1193.12 грн
В кошику  од. на суму  грн.
MXHV9910B pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
MXHV9910B
Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
товару немає в наявності
В кошику  од. на суму  грн.
MXHV9910BE pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: tube
Case: SO8-EP
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
товару немає в наявності
В кошику  од. на суму  грн.
MXHV9910BETR pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; 12V
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO8-EP
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
товару немає в наявності
В кошику  од. на суму  грн.
MXHV9910BTR pVersion=0046&contRep=ZT&docId=005056AB752F1ED884E51E01529F2A18&compId=MXHV9910.pdf?ci_sign=ffd62dce3bffad03e2e18b014812ca4d02bc5561
MXHV9910BTR
Виробник: IXYS
Category: LED drivers
Description: IC: driver; buck; AC/DC switcher,DC/DC switcher,LED driver; SO8
Topology: buck
Type of integrated circuit: driver
Mounting: SMD
Integrated circuit features: linear dimming; PWM
Kind of package: reel; tape
Case: SO8
Operating temperature: -40...85°C
Output current: 0.28A
Input voltage: 8...450V
Output voltage: 12V
Frequency: 64kHz
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
товару немає в наявності
В кошику  од. на суму  грн.
IXTA08N50D2 IXTA(P,Y)08N50D2.pdf
IXTA08N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP08N50D2 IXTA(P,Y)08N50D2.pdf
IXTP08N50D2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
на замовлення 264 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+204.01 грн
10+153.35 грн
25+119.73 грн
50+109.07 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTY08N50D2 IXTA(P,Y)08N50D2.pdf
IXTY08N50D2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO252; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO252
On-state resistance: 4.6Ω
Mounting: SMD
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
товару немає в наявності
В кошику  од. на суму  грн.
IXKC15N60C5 media?resourcetype=datasheets&itemid=350D5F86-1037-44C7-AFE1-4B49E34623C5&filename=Littelfuse-Discrete-MOSFETs-N-Channel-Super-Junction-IXKC15N60C5-Datasheet.PDF
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; ISOPLUS220™; 390ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 52nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
товару немає в наявності
В кошику  од. на суму  грн.
CLA100PD1200NA Littelfuse-Power-Semiconductors-CLA100PD1200NA-Datasheet?assetguid=3c99ebf3-0787-4f96-8215-5f6801302969
CLA100PD1200NA
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 100A; SOT227B; Ufmax: 1.21V; screw
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Case: SOT227B
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 40/80mA
Threshold on-voltage: 0.83V
Max. forward voltage: 1.21V
Load current: 100A
Max. forward impulse current: 1.5kA
Max. load current: 150A
Kind of package: bulk
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2505.47 грн
В кошику  од. на суму  грн.
CPC1135N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF20E20C7&compId=CPC1135N.pdf?ci_sign=4a18a2dbc91e1ae370bd5a8a3cd54dcab1a8fe21
CPC1135N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 35Ω
Turn-off time: 2ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 350V AC; max. 350V DC
на замовлення 5 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+140.42 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
CPC1968J pVersion=0046&contRep=ZT&docId=005056AB90B41EDA92FB94A0B59FE0C4&compId=CPC1968.pdf?ci_sign=160af4d4d6569d9dbcf0943ab2d83726dac949bb
CPC1968J
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; Ucntrl: 0.9÷1.56VDC; 5A; max.500VDC; THT; 350mΩ
Type of relay: solid state
Control voltage: 0.9...1.56V DC
Control current: 10mA
Max. operating current: 5A
Switched voltage: max. 500V DC
Relay variant: Photo MOSFET
On-state resistance: 0.35Ω
Mounting: THT
Operate time: 4.6ms
Release time: 0.07ms
Operating temperature: -40...85°C
Body dimensions: 26.2x20x5mm
Control current max.: 100mA
на замовлення 115 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1606.43 грн
50+1379.34 грн
100+1344.08 грн
В кошику  од. на суму  грн.
IXTX90N25L2 IXTK(X)90N25L2.pdf
IXTX90N25L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 90A; 960W; PLUS247™; 266ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 90A
Power dissipation: 960W
Case: PLUS247™
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 640nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 266ns
Features of semiconductor devices: linear power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTX90P20P IXT_90P20P.pdf
IXTX90P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -90A; 890W; 315ns
Mounting: THT
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -90A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 44mΩ
Power dissipation: 890W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Case: PLUS247™
Type of transistor: P-MOSFET
на замовлення 138 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1195.77 грн
5+1029.99 грн
10+998.83 грн
В кошику  од. на суму  грн.
MCD26-08IO1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFCCD2F11B1C0C4&compId=MCD26-08io1B.pdf?ci_sign=9a6942d374cdf75d8a1ab1d84902414ef95e38c5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCD26-08IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 0.8kV
Load current: 27A
Max. forward impulse current: 520A
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1435.10 грн
В кошику  од. на суму  грн.
MCD56-08IO1B pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFF1B629813A0C4&compId=MCD56-08io1B.pdf?ci_sign=821060ef1b8511e1aedf945e2c2f1ad91acdf64e pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCD56-08IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 800V; 60A; TO240AA; Ufmax: 1.24V; bulk
Max. off-state voltage: 0.8kV
Load current: 60A
Max. forward impulse current: 1.5kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.24V
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. load current: 100A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2177.82 грн
3+1786.09 грн
10+1608.95 грн
В кошику  од. на суму  грн.
MCD26-12IO1B pVersion=0046&contRep=ZT&docId=005056AB82531ED997E95549EA455820&compId=MCD26-12io1B.pdf?ci_sign=4127869398e286376682561c16b0525127e15c21 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9
MCD26-12IO1B
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.2kV; 27A; TO240AA; Ufmax: 1.27V; bulk
Max. off-state voltage: 1.2kV
Load current: 27A
Max. forward impulse current: 0.44kA
Case: TO240AA
Electrical mounting: FASTON connectors; screw
Kind of package: bulk
Max. forward voltage: 1.27V
Gate current: 100/200mA
Threshold on-voltage: 0.85V
Max. load current: 42A
Semiconductor structure: double series
Type of semiconductor module: diode-thyristor
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1667.37 грн
3+1390.82 грн
10+1292.41 грн
В кошику  од. на суму  грн.
IXTP150N15X4 IXTH(P)150N15X4.pdf
IXTP150N15X4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 150A; 480W; TO220AB; 100ns
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Gate charge: 105nC
Reverse recovery time: 100ns
On-state resistance: 7.2mΩ
Power dissipation: 480W
на замовлення 205 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+644.69 грн
3+541.24 грн
10+443.65 грн
25+378.87 грн
В кошику  од. на суму  грн.
IXTQ150N15P IXTK150N15P-DTE.pdf
IXTQ150N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 150A; 714W; TO3P
Case: TO3P
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: PolarHT™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 150A
Gate charge: 0.19µC
Reverse recovery time: 150ns
On-state resistance: 13mΩ
Power dissipation: 714W
Gate-source voltage: ±20V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+502.51 грн
В кошику  од. на суму  грн.
IXTA3N150HV IXTA3N150HV.pdf
IXTA3N150HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 3A; 250W; TO263; 900ns
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Gate charge: 38.6nC
Reverse recovery time: 900ns
Power dissipation: 250W
на замовлення 55 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+607.60 грн
5+521.56 грн
В кошику  од. на суму  грн.
IXFP10N60P IXFA(P)10N60P.pdf
IXFP10N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 120ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
на замовлення 52 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+236.68 грн
3+197.63 грн
10+174.67 грн
50+158.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP10N60P IXTP10N60P.pdf
IXTP10N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; 200W; TO220AB; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO220AB
On-state resistance: 0.74Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Gate charge: 32nC
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXFN110N60P3 IXFN110N60P3.pdf
IXFN110N60P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 90A; SOT227B; screw; Idm: 275A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 90A
Power dissipation: 1.5kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 56mΩ
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Gate charge: 254nC
Reverse recovery time: 250ns
Pulsed drain current: 275A
товару немає в наявності
В кошику  од. на суму  грн.
IXFA10N60P IXFA(P)10N60P.pdf
IXFA10N60P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 600V; 10A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 200W
Case: TO263
On-state resistance: 0.74Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 32nC
Reverse recovery time: 120ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFB110N60P3 IXFB110N60P3.pdf
IXFB110N60P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 600V; 110A; 1890W; 250ns
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 110A
Power dissipation: 1890W
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 56mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 254nC
Reverse recovery time: 250ns
товару немає в наявності
В кошику  од. на суму  грн.
CPC9909NTR CPC9909.pdf
CPC9909NTR
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
CPC9909N CPC9909.pdf
CPC9909N
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8; 2mA
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
Output current: 2mA
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+233.15 грн
5+176.31 грн
10+153.35 грн
25+125.47 грн
50+108.25 грн
100+98.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC9909NE CPC9909.pdf
CPC9909NE
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: tube
на замовлення 1016 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+211.07 грн
10+122.19 грн
25+104.15 грн
50+99.23 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC9909NETR CPC9909.pdf
Виробник: IXYS
Category: LED drivers
Description: IC: driver; AC/DC switcher,DC/DC switcher,LED driver; SO8-EP
Type of integrated circuit: driver
Kind of integrated circuit: AC/DC switcher; DC/DC switcher; LED driver
Case: SO8-EP
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating temperature: -55...85°C
Input voltage: 8...550V
Kind of package: reel; tape
товару немає в наявності
В кошику  од. на суму  грн.
IXFN44N80P description IXFN44N80P.pdf
IXFN44N80P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 39A; SOT227B; screw; Idm: 100A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 800V
Drain current: 39A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.19Ω
Pulsed drain current: 100A
Power dissipation: 694W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 200nC
Reverse recovery time: 250ns
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2681.21 грн
3+2201.04 грн
В кошику  од. на суму  грн.
IXFN44N80Q3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99EF9F937B909F820&compId=IXFN44N80Q3.pdf?ci_sign=fd80aa4819d75a8d19acc0bc3f82bfef6bd57b62
IXFN44N80Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 37A; SOT227B; screw; Idm: 130A
Technology: HiPerFET™; Q3-Class
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 37A
Pulsed drain current: 130A
Power dissipation: 780W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.19Ω
Gate charge: 185nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
IXTP60N10T IXTA(P)60N10T.pdf
IXTP60N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 176W; TO220AB; 59ns
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Gate charge: 49nC
Reverse recovery time: 59ns
On-state resistance: 18mΩ
Power dissipation: 176W
Kind of package: tube
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
на замовлення 261 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+158.97 грн
10+127.11 грн
25+104.15 грн
50+93.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFN360N10T IXFN360N10T.pdf
IXFN360N10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 360A; SOT227B; screw; Idm: 900A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 360A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.6mΩ
Pulsed drain current: 900A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Gate charge: 525nC
Reverse recovery time: 130ns
Kind of channel: enhancement
на замовлення 181 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1855.48 грн
5+1464.62 грн
10+1418.70 грн
В кошику  од. на суму  грн.
IXTP160N10T IXT_160N10T.pdf
IXTP160N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench™; unipolar; 100V; 160A; 430W; TO220AB
Mounting: THT
Technology: Trench™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 160A
Gate charge: 132nC
Reverse recovery time: 60ns
On-state resistance: 7mΩ
Power dissipation: 430W
Gate-source voltage: ±20V
Kind of package: tube
Kind of channel: enhancement
Case: TO220AB
Type of transistor: N-MOSFET
на замовлення 254 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+356.79 грн
10+271.44 грн
50+241.10 грн
100+227.16 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN44N100Q3 IXFN44N100Q3.pdf
IXFN44N100Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 38A; SOT227B; screw; Idm: 110A; 960W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 38A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.22Ω
Pulsed drain current: 110A
Power dissipation: 960W
Technology: HiPerFET™; Q3-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Gate charge: 264nC
Reverse recovery time: 300ns
Kind of channel: enhancement
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+5928.52 грн
В кошику  од. на суму  грн.
DSA1-12D pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8BA82836F916CE143&compId=DSA1-18D.pdf?ci_sign=452a5902ddb9885d20bbcd189749dd424e83331a
DSA1-12D
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 2.3A; tube; Ifsm: 110A; FP-Case
Load current: 2.3A
Max. forward impulse current: 110A
Max. off-state voltage: 1.2kV
Mounting: THT
Case: FP-Case
Type of diode: rectifying
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect
Kind of package: tube
Max. forward voltage: 1.34V
на замовлення 64 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+263.18 грн
10+226.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTH48N65X2 IXTH48N65X2.pdf
IXTH48N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
на замовлення 253 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+655.29 грн
10+479.73 грн
В кошику  од. на суму  грн.
IXFH60N65X2 IXFH60N65X2.pdf
IXFH60N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; Idm: 120A; 780W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Pulsed drain current: 120A
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Features of semiconductor devices: ultra junction x-class
Gate charge: 108nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFH60N65X2-4 IXFH60N65X2-4.pdf
IXFH60N65X2-4
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO247-4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO247-4
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Gate charge: 108nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFT60N65X2HV IXFT60N65X2HV.pdf
IXFT60N65X2HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 60A; 780W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 60A
Case: TO268
Gate-source voltage: ±30V
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
On-state resistance: 52mΩ
Power dissipation: 780W
Technology: HiPerFET™; X2-Class
Gate charge: 108nC
на замовлення 26 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+727.71 грн
В кошику  од. на суму  грн.
IXXH60N65B4 IXXH60N65B4.pdf
IXXH60N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 536W
Collector current: 60A
Pulsed collector current: 265A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 86nC
Turn-on time: 94ns
Turn-off time: 208ns
на замовлення 187 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+534.30 грн
3+446.11 грн
10+394.45 грн
30+354.27 грн
В кошику  од. на суму  грн.
IXXH60N65B4H1 IXXH60N65B4H1.pdf
IXXH60N65B4H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 536W
Collector current: 60A
Pulsed collector current: 265A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 86nC
Turn-on time: 94ns
Turn-off time: 208ns
на замовлення 293 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+961.74 грн
3+811.86 грн
10+715.09 грн
30+642.11 грн
В кошику  од. на суму  грн.
IXXH60N65C4 IXXH60N65C4.pdf
IXXH60N65C4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 60A; 536W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 536W
Collector current: 60A
Pulsed collector current: 260A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 86nC
Turn-on time: 110ns
Turn-off time: 164ns
товару немає в наявності
В кошику  од. на суму  грн.
IXXK160N65B4 IXXK(x)160N65B4.pdf
IXXK160N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Case: TO264
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 860A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 425nC
Turn-on time: 93ns
Turn-off time: 380ns
на замовлення 293 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1430.69 грн
3+1276.83 грн
10+1256.33 грн
В кошику  од. на суму  грн.
IXXK160N65C4 DS100516AIXXKX160N65C4.pdf
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; TO264
Type of transistor: IGBT
Case: TO264
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 320A
Collector-emitter voltage: 650V
Technology: GenX4™; XPT™
Gate charge: 422nC
Turn-on time: 52ns
Turn-off time: 197ns
товару немає в наявності
В кошику  од. на суму  грн.
IXXX160N65B4 IXXK(x)160N65B4.pdf
IXXX160N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 860A
Collector-emitter voltage: 650V
Technology: GenX4™; Trench; XPT™
Gate charge: 425nC
Turn-on time: 93ns
Turn-off time: 380ns
товару немає в наявності
В кошику  од. на суму  грн.
IXXX160N65C4 littelfuse-discrete-igbts-ixx-160n65c4-datasheet?assetguid=dcea7101-7c37-4ad5-a03a-2aa565384e38
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 160A; 940W; PLUS247™
Type of transistor: IGBT
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 940W
Collector current: 160A
Pulsed collector current: 320A
Collector-emitter voltage: 650V
Technology: GenX4™; XPT™
Gate charge: 422nC
Turn-on time: 52ns
Turn-off time: 197ns
товару немає в наявності
В кошику  од. на суму  грн.
DSEC16-06A Littelfuse-Power-Semiconductors-DSEC16-06A-Datasheet?assetguid=508d2251-0e5c-48cf-8629-cef1a4793aa5
DSEC16-06A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; TO220AB; 60W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.1V
Max. off-state voltage: 0.6kV
Load current: 10A x2
Max. forward impulse current: 50A
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
на замовлення 68 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+185.33 грн
10+161.55 грн
50+121.37 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
DSEC16-06AC Littelfuse-Power-Semiconductors-DSEC16-06AC-Datasheet?assetguid=727180e8-2052-4708-a088-44156766e2f7
DSEC16-06AC
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 10Ax2; tube; Ifsm: 50A; ISOPLUS220™
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 30ns
Max. forward voltage: 2.1V
Max. off-state voltage: 0.6kV
Load current: 10A x2
Max. forward impulse current: 50A
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: ISOPLUS220™
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
товару немає в наявності
В кошику  од. на суму  грн.
IXTA160N04T2 IXTA(P)160N04T2.pdf
IXTA160N04T2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO263; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO263
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTP160N04T2 IXTA(P)160N04T2.pdf
IXTP160N04T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; 250W; TO220AB; 40ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 160A
Power dissipation: 250W
Case: TO220AB
On-state resistance: 5mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 40ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH46N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F8F820&compId=IXFH46N65X2.pdf?ci_sign=18d8737ea270a8587aa3e2cf370bec98f3fe9809
IXFH46N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: ultra junction x-class
на замовлення 220 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+479.54 грн
В кошику  од. на суму  грн.
CPC1150N pVersion=0046&contRep=ZT&docId=005056AB82531EE995A3B9CF7BD978BF&compId=CPC1150N.pdf?ci_sign=c821c2d7d5de511af558a9ef727e8d94eaa1df7b
CPC1150N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 50Ω
Turn-off time: 2ms
Turn-on time: 1ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Switched voltage: max. 350V AC; max. 350V DC
на замовлення 504 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+228.73 грн
100+177.13 грн
500+141.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH14N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24
IXFH14N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 14A; 400W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 720mΩ
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 26 52 78 104 130 156 182 208 234 249 250 251 252 253 254 255 256 257 258 259 260 268  [ Наступна Сторінка >> ]