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IXTP20N65X2M IXTP20N65X2M IXYS IXTP20N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Reverse recovery time: 0.35µs
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IXYP20N65B3D1 IXYP20N65B3D1 IXYS IXYP20N65B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Collector-emitter voltage: 650V
Turn-on time: 39ns
Gate charge: 29nC
Turn-off time: 271ns
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IXKH20N60C5 IXKH20N60C5 IXYS IXK(H)20N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Gate charge: 32nC
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
1+493.37 грн
3+412.81 грн
10+365.02 грн
30+327.94 грн
В кошику  од. на суму  грн.
IXTP60N20T IXTP60N20T IXYS IXTA(P,Q)60N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Drain current: 60A
Drain-source voltage: 200V
Power dissipation: 500W
Kind of channel: enhancement
Mounting: THT
на замовлення 202 шт:
термін постачання 21-30 дні (днів)
2+414.39 грн
10+305.69 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTQ60N20T IXTQ60N20T IXYS IXTA(P,Q)60N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Drain current: 60A
Drain-source voltage: 200V
Power dissipation: 500W
Kind of channel: enhancement
Mounting: THT
на замовлення 218 шт:
термін постачання 21-30 дні (днів)
2+395.76 грн
10+274.38 грн
30+243.07 грн
120+204.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFT50N60P3 IXFT50N60P3 IXYS IXFH(T,Q)50N60P3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
1+784.42 грн
10+609.74 грн
В кошику  од. на суму  грн.
IXFT50N60X IXFT50N60X IXYS IXFH(Q,T)50N60X.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
Features of semiconductor devices: ultra junction x-class
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+945.03 грн
3+790.19 грн
10+696.26 грн
В кошику  од. на суму  грн.
IXXA50N60B3 IXXA50N60B3 IXYS IXXA(p,h)50N60B3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: TO263
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
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IXXH50N60B3 IXXH50N60B3 IXYS IXXA(p,h)50N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
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IXXH50N60B3D1 IXXH50N60B3D1 IXYS IXXH50N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
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IXXH50N60C3 IXXH50N60C3 IXYS IXXH50N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
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IXXH50N60C3D1 IXXH50N60C3D1 IXYS IXXH50N60C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
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IXXP50N60B3 IXXP50N60B3 IXYS IXXA(p,h)50N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
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IXXH150N60C3 IXXH150N60C3 IXYS IXXH150N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 700A
Collector-emitter voltage: 600V
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
1+1046.19 грн
3+882.47 грн
10+771.24 грн
30+693.78 грн
В кошику  од. на суму  грн.
IXYN150N60B3 IXYN150N60B3 IXYS IXYN150N60B3.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 830W
Case: SOT227B
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 140A
Semiconductor structure: single transistor
Pulsed collector current: 750A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
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IXYA20N65C3 IXYA20N65C3 IXYS IXYA(H)20N65C3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
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IXYA20N65C3D1 IXYA20N65C3D1 IXYS IXY_20N65C3D1.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
на замовлення 141 шт:
термін постачання 21-30 дні (днів)
2+252.01 грн
3+210.11 грн
10+186.22 грн
50+167.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXYH20N65C3 IXYH20N65C3 IXYS IXYA(H)20N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
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IXYP20N65C3D1 IXYP20N65C3D1 IXYS IXY_20N65C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
на замовлення 228 шт:
термін постачання 21-30 дні (днів)
2+315.01 грн
10+197.75 грн
50+154.91 грн
100+141.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXYP20N65C3D1M IXYP20N65C3D1M IXYS IXYP20N65C3D1M.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 50W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
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IXFK120N65X2 IXFK120N65X2 IXYS IXFK120N65X2_IXFX120N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 220ns
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IXFX120N65X2 IXFX120N65X2 IXYS IXFK120N65X2_IXFX120N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 220ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 240nC
Reverse recovery time: 220ns
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IXTK120N65X2 IXTK120N65X2 IXYS IXT_120N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 230nC
Reverse recovery time: 505ns
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IXTX120N65X2 IXTX120N65X2 IXYS IXT_120N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 230nC
Reverse recovery time: 505ns
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CPC1394GR CPC1394GR IXYS CPC1394.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Mounting: SMT
Body dimensions: 4.57x6.35x3.3mm
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 5ms
Control current max.: 50mA
Kind of output: MOSFET
Max. operating current: 90mA
On-state resistance: 40Ω
Case: DIP4
Insulation voltage: 5kV
на замовлення 533 шт:
термін постачання 21-30 дні (днів)
2+238.70 грн
100+145.02 грн
500+117.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFK78N50P3 IXFK78N50P3 IXYS IXFK(X)78N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: TO264
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+1138.47 грн
10+874.23 грн
В кошику  од. на суму  грн.
IXFK98N50P3 IXFK98N50P3 IXYS IXFK(X)98N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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IXFX78N50P3 IXFX78N50P3 IXYS IXFK(X)78N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
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IXFX98N50P3 IXFX98N50P3 IXYS IXFK(X)98N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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DSB15IM45IB DSB15IM45IB IXYS DSB15IM45IB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.55V; 70W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: TO262
Max. forward voltage: 0.55V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
на замовлення 494 шт:
термін постачання 21-30 дні (днів)
18+25.73 грн
19+22.25 грн
Мінімальне замовлення: 18
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IXFN210N30P3 IXFN210N30P3 IXYS IXFN210N30P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 192A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14.5mΩ
Pulsed drain current: 550A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar3™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 268nC
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2891.00 грн
В кошику  од. на суму  грн.
MCMA35PD1600TB MCMA35PD1600TB IXYS MCMA35PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Case: TO240AA
Gate current: 78/200mA
Threshold on-voltage: 0.87V
Max. forward voltage: 1.22V
Load current: 35A
Max. load current: 55A
Max. forward impulse current: 520A
Max. off-state voltage: 1.6kV
Kind of package: bulk
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
1+1796.89 грн
3+1557.30 грн
10+1505.39 грн
36+1483.15 грн
В кошику  од. на суму  грн.
IXFX27N80Q IXFX27N80Q IXYS IXFK(X)27N80Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
1+1701.94 грн
3+1421.35 грн
10+1326.59 грн
В кошику  од. на суму  грн.
IXYA50N65C3 IXYA50N65C3 IXYS IXY_50N65C3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
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IXYH50N65C3 IXYH50N65C3 IXYS IXY_50N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
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IXYH50N65C3D1 IXYH50N65C3D1 IXYS IXYH50N65C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
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IXYP50N65C3 IXYP50N65C3 IXYS IXY_50N65C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
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IXGX320N60B3 IXGX320N60B3 IXYS IXGK(x)320N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate charge: 585nC
Turn-on time: 107ns
Turn-off time: 595ns
Collector current: 320A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2028.49 грн
В кошику  од. на суму  грн.
IXFA34N65X2 IXFA34N65X2 IXYS IXFA34N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
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IXFH34N65X2 IXFH34N65X2 IXYS IXF_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Technology: HiPerFET™; X2-Class
на замовлення 186 шт:
термін постачання 21-30 дні (днів)
1+542.17 грн
10+416.93 грн
30+389.74 грн
120+355.96 грн
В кошику  од. на суму  грн.
IXFP34N65X3 IXFP34N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfp34n65x3-datasheet?assetguid=b8b82367-8165-4fdb-9be0-fbb097cfcc0b Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
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IXTA34N65X2 IXTA34N65X2 IXYS IXTA34N65X2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
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IXTH34N65X2 IXTH34N65X2 IXYS IXT_34N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
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IXTP24N65X2 IXTP24N65X2 IXYS IXT_24N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
1+504.02 грн
В кошику  од. на суму  грн.
IXTP90N055T2 IXTP90N055T2 IXYS IXTA(I,P,Y)90N055T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Case: TO220AB
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Drain-source voltage: 55V
Drain current: 90A
Reverse recovery time: 37ns
Gate charge: 42nC
On-state resistance: 8.4mΩ
Power dissipation: 150W
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
3+218.29 грн
10+124.42 грн
50+104.64 грн
100+95.58 грн
200+92.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTR90P20P IXTR90P20P IXYS IXTR90P20P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Case: ISOPLUS247™
Mounting: THT
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -53A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 48mΩ
Power dissipation: 312W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+641.56 грн
В кошику  од. на суму  грн.
IXFN26N100P IXFN26N100P IXYS IXFN26N100P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 197nC
Kind of channel: enhancement
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+4724.27 грн
3+3871.84 грн
В кошику  од. на суму  грн.
IXYH40N65B3D1 IXYH40N65B3D1 IXYS IXYH(Q)40N65B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Technology: GenX3™; Planar; XPT™
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IXYH40N65C3D1 IXYH40N65C3D1 IXYS IXYH(Q)40N65C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
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IXYH40N65C3H1 IXYH40N65C3H1 IXYS IXYH40N65C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Technology: GenX3™; Planar; XPT™
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IXXH140N65C4 IXXH140N65C4 IXYS IXXH140N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Technology: GenX4™; Trench; XPT™
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IXTA05N100HV IXTA05N100HV IXYS IXTA(P)05N100_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
2+318.56 грн
3+279.33 грн
10+237.30 грн
50+185.39 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN220N20X3 IXFN220N20X3 IXYS IXFN220N20X3.pdf 200VProductBrief.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 128ns
Gate charge: 204nC
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2670.93 грн
В кошику  од. на суму  грн.
IXTX8N150L IXTX8N150L IXYS IXTK(X)8N150L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
Drain current: 8A
Drain-source voltage: 1.5kV
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+2537.83 грн
В кошику  од. на суму  грн.
IXTP24N65X2M IXTP24N65X2M IXYS IXTP24N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
2+315.90 грн
10+196.93 грн
50+190.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXGH36N60B3 IXGH36N60B3 IXYS IXGH36N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
на замовлення 223 шт:
термін постачання 21-30 дні (днів)
2+386.89 грн
30+258.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXGH36N60B3C1 IXGH36N60B3C1 IXYS IXGx36N60B3C1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Turn-on time: 47ns
Turn-off time: 350ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2421.59 грн
В кошику  од. на суму  грн.
IXFL82N60P IXFL82N60P IXYS IXFL82N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Power dissipation: 625W
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+898.89 грн
В кошику  од. на суму  грн.
IXFN50N120SK IXFN50N120SK IXYS media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+6933.78 грн
3+5691.99 грн
В кошику  од. на суму  грн.
IXFH230N10T IXFH230N10T IXYS IXFH230N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+652.20 грн
В кошику  од. на суму  грн.
IXTP20N65X2M IXTP20N65X2M.pdf
IXTP20N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; 36W; TO220FP; 350ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 36W
Case: TO220FP
On-state resistance: 0.185Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 27nC
Reverse recovery time: 0.35µs
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IXYP20N65B3D1 IXYP20N65B3D1.pdf
IXYP20N65B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 108A
Collector-emitter voltage: 650V
Turn-on time: 39ns
Gate charge: 29nC
Turn-off time: 271ns
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IXKH20N60C5 IXK(H)20N60C5.pdf
IXKH20N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; 208W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
Gate charge: 32nC
на замовлення 49 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+493.37 грн
3+412.81 грн
10+365.02 грн
30+327.94 грн
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IXTP60N20T IXTA(P,Q)60N20T.pdf
IXTP60N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO220AB; 118ns
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO220AB
Kind of package: tube
Polarisation: unipolar
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Drain current: 60A
Drain-source voltage: 200V
Power dissipation: 500W
Kind of channel: enhancement
Mounting: THT
на замовлення 202 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+414.39 грн
10+305.69 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTQ60N20T IXTA(P,Q)60N20T.pdf
IXTQ60N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 60A; 500W; TO3P; 118ns
Type of transistor: N-MOSFET
Features of semiconductor devices: thrench gate power mosfet
Case: TO3P
Kind of package: tube
Polarisation: unipolar
Gate charge: 73nC
Reverse recovery time: 118ns
On-state resistance: 40mΩ
Drain current: 60A
Drain-source voltage: 200V
Power dissipation: 500W
Kind of channel: enhancement
Mounting: THT
на замовлення 218 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+395.76 грн
10+274.38 грн
30+243.07 грн
120+204.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFT50N60P3 IXFH(T,Q)50N60P3.pdf
IXFT50N60P3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 1040W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 1.04kW
Case: TO268
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 94nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 200 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+784.42 грн
10+609.74 грн
В кошику  од. на суму  грн.
IXFT50N60X IXFH(Q,T)50N60X.pdf
IXFT50N60X
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 50A; 660W; TO268; 195ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Power dissipation: 660W
Case: TO268
On-state resistance: 73mΩ
Mounting: SMD
Gate charge: 116nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 195ns
Features of semiconductor devices: ultra junction x-class
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+945.03 грн
3+790.19 грн
10+696.26 грн
В кошику  од. на суму  грн.
IXXA50N60B3 IXXA(p,h)50N60B3.pdf
IXXA50N60B3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO263
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: TO263
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
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IXXH50N60B3 IXXA(p,h)50N60B3.pdf
IXXH50N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
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IXXH50N60B3D1 IXXH50N60B3D1.pdf
IXXH50N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
товару немає в наявності
В кошику  од. на суму  грн.
IXXH50N60C3 IXXH50N60C3.pdf
IXXH50N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
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IXXH50N60C3D1 IXXH50N60C3D1.pdf
IXXH50N60C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 600W
Case: TO247-3
Mounting: THT
Gate charge: 64nC
Kind of package: tube
Turn-on time: 69ns
Turn-off time: 170ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
товару немає в наявності
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IXXP50N60B3 IXXA(p,h)50N60B3.pdf
IXXP50N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 50A; 600W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; XPT™
Power dissipation: 600W
Case: TO220-3
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 75ns
Turn-off time: 320ns
Gate-emitter voltage: ±20V
Collector current: 50A
Pulsed collector current: 200A
Collector-emitter voltage: 600V
товару немає в наявності
В кошику  од. на суму  грн.
IXXH150N60C3 IXXH150N60C3.pdf
IXXH150N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 150A; 1.36kW; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 1.36kW
Case: TO247-3
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Turn-on time: 0.1µs
Turn-off time: 230ns
Gate-emitter voltage: ±20V
Collector current: 150A
Pulsed collector current: 700A
Collector-emitter voltage: 600V
на замовлення 298 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1046.19 грн
3+882.47 грн
10+771.24 грн
30+693.78 грн
В кошику  од. на суму  грн.
IXYN150N60B3 IXYN150N60B3.pdf
IXYN150N60B3
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 600V; Ic: 140A; SOT227B
Technology: GenX3™; XPT™
Power dissipation: 830W
Case: SOT227B
Type of semiconductor module: IGBT
Gate-emitter voltage: ±20V
Collector current: 140A
Semiconductor structure: single transistor
Pulsed collector current: 750A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Mechanical mounting: screw
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В кошику  од. на суму  грн.
IXYA20N65C3 IXYA(H)20N65C3.pdf
IXYA20N65C3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
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IXYA20N65C3D1 IXY_20N65C3D1.pdf
IXYA20N65C3D1
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO263
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
на замовлення 141 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+252.01 грн
3+210.11 грн
10+186.22 грн
50+167.27 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXYH20N65C3 IXYA(H)20N65C3.pdf
IXYH20N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 230W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 230W
Case: TO247-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
товару немає в наявності
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IXYP20N65C3D1 IXY_20N65C3D1.pdf
IXYP20N65C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 20A; 200W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 200W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
на замовлення 228 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+315.01 грн
10+197.75 грн
50+154.91 грн
100+141.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXYP20N65C3D1M IXYP20N65C3D1M.pdf
IXYP20N65C3D1M
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 9A; 50W; TO220FP
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 50W
Case: TO220FP
Mounting: THT
Kind of package: tube
Collector current: 9A
Gate-emitter voltage: ±20V
Pulsed collector current: 105A
Collector-emitter voltage: 650V
Turn-on time: 51ns
Gate charge: 30nC
Turn-off time: 132ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFK120N65X2 IXFK120N65X2_IXFX120N65X2.pdf
IXFK120N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 240nC
Reverse recovery time: 220ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFX120N65X2 IXFK120N65X2_IXFX120N65X2.pdf
IXFX120N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 220ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 24mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 240nC
Reverse recovery time: 220ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTK120N65X2 IXT_120N65X2.pdf
IXTK120N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 120A; 1250W; TO264
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 230nC
Reverse recovery time: 505ns
товару немає в наявності
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IXTX120N65X2 IXT_120N65X2.pdf
IXTX120N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 120A; 1250W; PLUS247™; 505ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 120A
Power dissipation: 1.25kW
Case: PLUS247™
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 230nC
Reverse recovery time: 505ns
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В кошику  од. на суму  грн.
CPC1394GR CPC1394.pdf
CPC1394GR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Mounting: SMT
Body dimensions: 4.57x6.35x3.3mm
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 5ms
Control current max.: 50mA
Kind of output: MOSFET
Max. operating current: 90mA
On-state resistance: 40Ω
Case: DIP4
Insulation voltage: 5kV
на замовлення 533 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+238.70 грн
100+145.02 грн
500+117.00 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFK78N50P3 IXFK(X)78N50P3.pdf
IXFK78N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: TO264
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1138.47 грн
10+874.23 грн
В кошику  од. на суму  грн.
IXFK98N50P3 IXFK(X)98N50P3.pdf
IXFK98N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXFX78N50P3 IXFK(X)78N50P3.pdf
IXFX78N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: PLUS247™
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
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В кошику  од. на суму  грн.
IXFX98N50P3 IXFK(X)98N50P3.pdf
IXFX98N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 98A; 1300W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 98A
Power dissipation: 1.3kW
Case: PLUS247™
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
DSB15IM45IB DSB15IM45IB.pdf
DSB15IM45IB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15A; TO262; Ufmax: 0.55V; 70W
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A
Semiconductor structure: single diode
Case: TO262
Max. forward voltage: 0.55V
Max. forward impulse current: 340A
Power dissipation: 70W
Kind of package: tube
на замовлення 494 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
18+25.73 грн
19+22.25 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
IXFN210N30P3 IXFN210N30P3.pdf
IXFN210N30P3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 192A; SOT227B; screw; Idm: 550A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 192A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 14.5mΩ
Pulsed drain current: 550A
Power dissipation: 1.5kW
Technology: HiPerFET™; Polar3™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 250ns
Gate charge: 268nC
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2891.00 грн
В кошику  од. на суму  грн.
MCMA35PD1600TB MCMA35PD1600TB.pdf PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
MCMA35PD1600TB
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 35A; TO240AA; Ufmax: 1.22V; bulk
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Case: TO240AA
Gate current: 78/200mA
Threshold on-voltage: 0.87V
Max. forward voltage: 1.22V
Load current: 35A
Max. load current: 55A
Max. forward impulse current: 520A
Max. off-state voltage: 1.6kV
Kind of package: bulk
на замовлення 36 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1796.89 грн
3+1557.30 грн
10+1505.39 грн
36+1483.15 грн
В кошику  од. на суму  грн.
IXFX27N80Q IXFK(X)27N80Q.pdf
IXFX27N80Q
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1701.94 грн
3+1421.35 грн
10+1326.59 грн
В кошику  од. на суму  грн.
IXYA50N65C3 IXY_50N65C3.pdf
IXYA50N65C3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO263-2
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO263-2
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
товару немає в наявності
В кошику  од. на суму  грн.
IXYH50N65C3 IXY_50N65C3.pdf
IXYH50N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
товару немає в наявності
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IXYH50N65C3D1 IXYH50N65C3D1.pdf
IXYH50N65C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
товару немає в наявності
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IXYP50N65C3 IXY_50N65C3.pdf
IXYP50N65C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 50A; 600W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 600W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 250A
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 56ns
Turn-off time: 145ns
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IXGX320N60B3 IXGK(x)320N60B3.pdf
IXGX320N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 320A; 1.7kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 1.7kW
Case: PLUS247™
Mounting: THT
Kind of package: tube
Collector-emitter voltage: 600V
Gate charge: 585nC
Turn-on time: 107ns
Turn-off time: 595ns
Collector current: 320A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.2kA
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2028.49 грн
В кошику  од. на суму  грн.
IXFA34N65X2 IXFA34N65X2.pdf
IXFA34N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 164ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Features of semiconductor devices: ultra junction x-class
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IXFH34N65X2 IXF_34N65X2.pdf
IXFH34N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 34A; 540W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 164ns
Technology: HiPerFET™; X2-Class
на замовлення 186 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+542.17 грн
10+416.93 грн
30+389.74 грн
120+355.96 грн
В кошику  од. на суму  грн.
IXFP34N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfp34n65x3-datasheet?assetguid=b8b82367-8165-4fdb-9be0-fbb097cfcc0b
IXFP34N65X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 34A; Idm: 48A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 446W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 150ns
Technology: HiPerFET™; X3-Class
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IXTA34N65X2 IXTA34N65X2.pdf
IXTA34N65X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
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В кошику  од. на суму  грн.
IXTH34N65X2 IXT_34N65X2.pdf
IXTH34N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO247-3; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO247-3
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
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IXTP24N65X2 IXT_24N65X2.pdf
IXTP24N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 390W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 390W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+504.02 грн
В кошику  од. на суму  грн.
IXTP90N055T2 IXTA(I,P,Y)90N055T2.pdf
IXTP90N055T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 90A; 150W; TO220AB; 37ns
Case: TO220AB
Mounting: THT
Type of transistor: N-MOSFET
Kind of package: tube
Features of semiconductor devices: thrench gate power mosfet
Drain-source voltage: 55V
Drain current: 90A
Reverse recovery time: 37ns
Gate charge: 42nC
On-state resistance: 8.4mΩ
Power dissipation: 150W
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+218.29 грн
10+124.42 грн
50+104.64 грн
100+95.58 грн
200+92.28 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTR90P20P IXTR90P20P.pdf
IXTR90P20P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -200V; -53A; 312W; 315ns
Case: ISOPLUS247™
Mounting: THT
Type of transistor: P-MOSFET
Technology: PolarP™
Kind of package: tube
Drain-source voltage: -200V
Drain current: -53A
Reverse recovery time: 315ns
Gate charge: 205nC
On-state resistance: 48mΩ
Power dissipation: 312W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+641.56 грн
В кошику  од. на суму  грн.
IXFN26N100P IXFN26N100P.pdf
IXFN26N100P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 23A; SOT227B; screw; Idm: 65A; 595W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 23A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 390mΩ
Pulsed drain current: 65A
Power dissipation: 595W
Technology: HiPerFET™; Polar™
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 300ns
Gate charge: 197nC
Kind of channel: enhancement
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+4724.27 грн
3+3871.84 грн
В кошику  од. на суму  грн.
IXYH40N65B3D1 IXYH(Q)40N65B3D1.pdf
IXYH40N65B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Technology: GenX3™; Planar; XPT™
товару немає в наявності
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IXYH40N65C3D1 IXYH(Q)40N65C3D1.pdf
IXYH40N65C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
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IXYH40N65C3H1 IXYH40N65C3H1.pdf
IXYH40N65C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Technology: GenX3™; Planar; XPT™
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IXXH140N65C4 IXXH140N65C4.pdf
IXXH140N65C4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Technology: GenX4™; Trench; XPT™
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IXTA05N100HV IXTA(P)05N100_HV.pdf
IXTA05N100HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+318.56 грн
3+279.33 грн
10+237.30 грн
50+185.39 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN220N20X3 IXFN220N20X3.pdf 200VProductBrief.pdf
IXFN220N20X3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 128ns
Gate charge: 204nC
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2670.93 грн
В кошику  од. на суму  грн.
IXTX8N150L IXTK(X)8N150L.pdf
IXTX8N150L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Case: PLUS247™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
Drain current: 8A
Drain-source voltage: 1.5kV
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2537.83 грн
В кошику  од. на суму  грн.
IXTP24N65X2M IXTP24N65X2M.pdf
IXTP24N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
на замовлення 87 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+315.90 грн
10+196.93 грн
50+190.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXGH36N60B3 IXGH36N60B3.pdf
IXGH36N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
на замовлення 223 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+386.89 грн
30+258.73 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXGH36N60B3C1 IXGx36N60B3C1-DTE.pdf
IXGH36N60B3C1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 600V
Turn-on time: 47ns
Turn-off time: 350ns
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2421.59 грн
В кошику  од. на суму  грн.
IXFL82N60P IXFL82N60P.pdf
IXFL82N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Power dissipation: 625W
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+898.89 грн
В кошику  од. на суму  грн.
IXFN50N120SK media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet
IXFN50N120SK
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+6933.78 грн
3+5691.99 грн
В кошику  од. на суму  грн.
IXFH230N10T IXFH230N10T.pdf
IXFH230N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 230A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 4.7mΩ
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: thrench gate power mosfet
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+652.20 грн
В кошику  од. на суму  грн.
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