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CPC1030N CPC1030N IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75BE0C7&compId=CPC1030N.pdf?ci_sign=f5306a3547ebea4ac3441d82e07f700914fb2e7d Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 30Ω
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Switched voltage: max. 350V AC; max. 350V DC
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
4+140.42 грн
10+111.07 грн
100+98.19 грн
Мінімальне замовлення: 4
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IXYH40N65B3D1 IXYH40N65B3D1 IXYS IXYH(Q)40N65B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Technology: GenX3™; Planar; XPT™
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IXYH40N65C3D1 IXYH40N65C3D1 IXYS IXYH(Q)40N65C3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
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IXYH40N65C3H1 IXYH40N65C3H1 IXYS IXYH40N65C3H1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Technology: GenX3™; Planar; XPT™
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IXXH140N65B4 IXXH140N65B4 IXYS IXXH140N65B4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
Technology: GenX4™; Trench; XPT™
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IXXH140N65C4 IXXH140N65C4 IXYS IXXH140N65C4.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Technology: GenX4™; Trench; XPT™
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IXFT15N100Q3 IXFT15N100Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECE0AF857958BF&compId=IXF_15N100Q3.pdf?ci_sign=1dd331295c1d7ea0154eeba2040fc94c4aba0ac2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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IXTA05N100 IXTA05N100 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CFC3007D5820&compId=IXTA(P)05N100_HV.pdf?ci_sign=7a5ec5e1cee1b6c6154e445efc3fb4608695a56f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
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IXTA05N100HV IXTA05N100HV IXYS IXTA(P)05N100_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 40W
Case: TO263HV
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
On-state resistance: 17Ω
Drain current: 0.75A
Drain-source voltage: 1kV
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
2+247.89 грн
3+213.29 грн
10+188.34 грн
50+181.09 грн
Мінімальне замовлення: 2
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IXTP05N100 IXTP05N100 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CFC3007D5820&compId=IXTA(P)05N100_HV.pdf?ci_sign=7a5ec5e1cee1b6c6154e445efc3fb4608695a56f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO220AB
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
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IXTP05N100P IXTP05N100P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12CB820&compId=IXTP05N100P.pdf?ci_sign=d4781f4c3352d29dcd458ddadab27f78de1e370d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
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IXDN614SI IXDN614SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
2+229.69 грн
5+190.75 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFN220N20X3 IXFN220N20X3 IXYS IXFN220N20X3.pdf 200VProductBrief.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 128ns
Gate charge: 204nC
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2608.96 грн
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IXTX8N150L IXTX8N150L IXYS IXTK(X)8N150L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Case: PLUS247™
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 8A
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+2693.04 грн
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IXTP2N65X2 IXTP2N65X2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89C4F8CE3158BF&compId=IXTP(Y)2N65X2.pdf?ci_sign=a1b44b73e461987c86a1219b0eef051f39a61060 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
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IXTP24N65X2M IXTP24N65X2M IXYS IXTP24N65X2M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
на замовлення 91 шт:
термін постачання 21-30 дні (днів)
2+308.57 грн
10+192.36 грн
50+185.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXGH36N60B3 IXGH36N60B3 IXYS IXGH36N60B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
на замовлення 225 шт:
термін постачання 21-30 дні (днів)
2+393.51 грн
10+293.77 грн
30+247.89 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXGH36N60B3C1 IXGH36N60B3C1 IXYS IXGx36N60B3C1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 47ns
Turn-off time: 350ns
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2365.40 грн
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MCD132-12io1 IXYS MCD132-12io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Semiconductor module: diode-thyristor; 1.2kV; 130A; Y4-M6; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
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MCD132-14io1 IXYS MCD132-14io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Semiconductor module: diode-thyristor; 1.4kV; 130A; Y4-M6; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
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MCD132-16io1 IXYS MCD132-16IO1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Semiconductor module: diode-thyristor; 1.6kV; 130A; Y4-M6; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
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MCD132-18io1 IXYS MCD132-18io1.pdf PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Semiconductor module: diode-thyristor; 1.8kV; 130A; Y4-M6; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
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IXFL82N60P IXFL82N60P IXYS IXFL82N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Power dissipation: 625W
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+878.90 грн
В кошику  од. на суму  грн.
MCMA50P1200TA MCMA50P1200TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: thyristor
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
1+1681.52 грн
В кошику  од. на суму  грн.
MCMA50P1600TA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: thyristor
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MDMA50P1200TG IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82E9F44A6C80C4&compId=MDMA50P1200TG.pdf?ci_sign=c338cd758340ff753151ab05348149331307a229 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: diode
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MDMA50P1600TG IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82F5CADE9380C4&compId=MDMA50P1600TG.pdf?ci_sign=0a5f5597242916f0250f9ce76767b1af5665c5e0 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.6kV
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: diode
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IXFN50N120SK IXFN50N120SK IXYS media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+6772.90 грн
3+5559.92 грн
В кошику  од. на суму  грн.
IXFH230N10T IXFH230N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F37820&compId=IXFH230N10T.pdf?ci_sign=7906ddc75f59da0a6c8caab968b9ecc6143741fa Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 82ns
On-state resistance: 4.7mΩ
Drain current: 230A
Power dissipation: 650W
Drain-source voltage: 100V
Kind of channel: enhancement
Case: TO247-3
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
1+637.07 грн
В кошику  од. на суму  грн.
IXFP130N10T2 IXFP130N10T2 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDDFC904CE7820&compId=IXFA(P)130N10T2.pdf?ci_sign=9f7a4995595efb7e18b0a338b9a9c0baa1ff9a83 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 10.1mΩ
Drain current: 130A
Power dissipation: 360W
Drain-source voltage: 100V
Kind of channel: enhancement
Case: TO220AB
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
2+272.16 грн
3+226.97 грн
10+201.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1560G CPC1560G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D8C0C7&compId=CPC1560.pdf?ci_sign=c3c246383ef6fa3887c9a7b5b676f250f34749d1 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Mounting: THT
Case: DIP8
Contacts configuration: SPST-NO
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 0.1ms
Turn-off time: 400µs
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 146 шт:
термін постачання 21-30 дні (днів)
2+315.50 грн
10+257.55 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
VVZ110-12IO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98C861DB90B34D8BF&compId=VVZ110_VVZ175.pdf?ci_sign=07196062ed3a464ff7e33b39e08a02fdb9b7931a Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Case: PWS-E
Leads: M6 screws
Electrical mounting: FASTON connectors; screw
Type of bridge rectifier: half-controlled
Mechanical mounting: screw
Gate current: 100/200mA
Max. forward voltage: 1.75V
Load current: 110A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.35kA
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IXTH50P10 IXTH50P10 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA07D75C831B8BF&compId=IXT_50P10.pdf?ci_sign=cc953308140627b6febcf9593e82ba0797b12d8b Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO247-3
на замовлення 306 шт:
термін постачання 21-30 дні (днів)
1+800.89 грн
10+634.22 грн
30+594.79 грн
120+545.69 грн
270+519.94 грн
В кошику  од. на суму  грн.
IXTT50P10 IXTT50P10 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA07D75C831B8BF&compId=IXT_50P10.pdf?ci_sign=cc953308140627b6febcf9593e82ba0797b12d8b Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO268
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
1+652.67 грн
3+536.03 грн
10+481.30 грн
В кошику  од. на суму  грн.
IXFP60N25X3M IXFP60N25X3M IXYS IXFP60N25X3M.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 36W
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+518.33 грн
3+426.57 грн
10+346.09 грн
В кошику  од. на суму  грн.
IXTN210P10T IXTN210P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1EE797949FD586272748&compId=IXTN210P10T.pdf?ci_sign=c7eaa6ff621298b381d20e5aabc3375642501283 Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Case: SOT227B
Semiconductor structure: single transistor
Polarisation: unipolar
Pulsed drain current: -800A
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: TrenchP™
Type of semiconductor module: MOSFET transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXTR210P10T IXTR210P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA04275137A38BF&compId=IXTR210P10T.pdf?ci_sign=6be69c09b119a4bc5566676e52a110aa09280e61 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -195A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 8mΩ
Gate-source voltage: ±15V
Power dissipation: 390W
Kind of channel: enhancement
Technology: TrenchP™
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+2380.14 грн
3+1954.99 грн
10+1774.70 грн
В кошику  од. на суму  грн.
IXTX210P10T IXTX210P10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03E7174C718BF&compId=IXTX210P10T.pdf?ci_sign=eb9be669937aaa10adc6b2be9042b5a5749257a3 Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Kind of channel: enhancement
Technology: TrenchP™
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
1+1936.35 грн
10+1646.73 грн
В кошику  од. на суму  грн.
CPC1510G CPC1510G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004780C7&compId=CPC1510.pdf?ci_sign=dca2f490d390e88ab018824ec0cbe6d4e63b3e56 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
2+219.29 грн
50+197.19 грн
300+184.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1510GS CPC1510GS IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE9958FDF2EB56DF8BF&compId=CPC1510.pdf?ci_sign=9749f199defe3add8fb64a51a16864787d36708b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
2+393.51 грн
50+335.62 грн
100+286.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEC16-12A DSEC16-12A IXYS DSEC16-12A.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 40ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.94V
Max. off-state voltage: 1.2kV
Load current: 8A x2
Max. forward impulse current: 40A
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
товару немає в наявності
В кошику  од. на суму  грн.
DSEC16-12AS-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4F5F44C2260C4&compId=DSEC16-12AS.pdf?ci_sign=7fe88d45cfa69a339b55e2fa6635825aa1a7704b Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Mounting: SMD
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 1.96V
Max. off-state voltage: 1.2kV
Load current: 8A x2
Max. forward impulse current: 40A
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: D2PAK
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
товару немає в наявності
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IXTQ120N20P IXTQ120N20P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9109183E093E27&compId=IXTK120N20P-DTE.pdf?ci_sign=8d92652847182241575b90496cedc624b85642c3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Gate-source voltage: ±20V
Power dissipation: 714W
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
1+701.21 грн
В кошику  од. на суму  грн.
PLB190 PLB190 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 240 шт:
термін постачання 21-30 дні (днів)
2+386.58 грн
10+311.48 грн
50+268.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLB190S PLB190S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
2+384.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLB190STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ34N65X2M IXTQ34N65X2M IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtq34n65x2m_datasheet.pdf?assetguid=9e2804bf-85d4-45e2-ba6f-de4ee48d3cec Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
1+649.21 грн
3+541.67 грн
10+478.89 грн
В кошику  од. на суму  грн.
IXTQ48N65X2M IXTQ48N65X2M IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
1+793.09 грн
3+664.00 грн
10+586.74 грн
В кошику  од. на суму  грн.
IXFP60N25X3 IXFP60N25X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48077B3DDB820&compId=IXFA(P%2CQ)60N25X3.pdf?ci_sign=40bf31d6f48e6a29413d60f94152aaab04d45448 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
1+572.06 грн
3+494.98 грн
10+437.84 грн
50+368.62 грн
В кошику  од. на суму  грн.
IXTH32N65X IXTH32N65X IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC14A9F2EB3820&compId=IXTH(P%2CQ)32N65X.pdf?ci_sign=6a88174097b72279f3942c45d4c91b42e2da5718 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
на замовлення 157 шт:
термін постачання 21-30 дні (днів)
1+512.26 грн
3+428.18 грн
10+378.28 грн
30+339.65 грн
В кошику  од. на суму  грн.
IXFN240N15T2 IXFN240N15T2 IXYS IXFN240N15T2.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 460nC
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2121.84 грн
В кошику  од. на суму  грн.
DSS25-0025B DSS25-0025B IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAD2C325DCD8BF&compId=DSS25-0025B.pdf?ci_sign=f6f65f217afdcd493a817c25caa07db6fbf77538 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
товару немає в наявності
В кошику  од. на суму  грн.
IXFN36N100 IXFN36N100 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA766581850B820&compId=IXFN36N100.pdf?ci_sign=ed624506c3a3f62202f258b7df94949020d4b004 description Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 180ns
Gate charge: 380nC
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+6613.41 грн
3+5425.51 грн
10+4872.58 грн
В кошику  од. на суму  грн.
CPC1973Y CPC1973Y IXYS CPC1973.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Case: SIP4
On-state resistance: 5Ω
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Max. operating current: 0.35mA
Turn-off time: 3ms
Turn-on time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 400V AC
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Relay variant: 1-phase
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
2+360.57 грн
10+293.77 грн
25+267.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFB82N60Q3 IXFB82N60Q3 IXYS IXFB82N60Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+972.51 грн
В кошику  од. на суму  грн.
IXTP15P15T IXTP15P15T IXYS IXT_15P15T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Gate charge: 48nC
Reverse recovery time: 116ns
On-state resistance: 0.24Ω
Power dissipation: 150W
Gate-source voltage: ±15V
на замовлення 182 шт:
термін постачання 21-30 дні (днів)
2+292.10 грн
10+248.70 грн
50+200.41 грн
100+176.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1218Y CPC1218Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF21340C7&compId=CPC1218.pdf?ci_sign=9c98dc3d6e8c890d0b45503495283d4f4da9397b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 5÷12VDC; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 5...12V DC
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1.1Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
на замовлення 136 шт:
термін постачання 21-30 дні (днів)
1+437.72 грн
10+319.53 грн
25+287.33 грн
50+263.19 грн
100+239.85 грн
В кошику  од. на суму  грн.
CPC1393G CPC1393G IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
на замовлення 221 шт:
термін постачання 21-30 дні (днів)
3+153.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1393GV CPC1393GV IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
2+233.16 грн
100+141.65 грн
500+114.29 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CMA50P1600FC CMA50P1600FC IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF097A4C94098BF&compId=CMA50P1600FC.pdf?ci_sign=b72ced94642464a929aa6ab7e507a6825f1b9885 Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80/200mA; THT; tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 80/200mA
Load current: 50A
Max. load current: 79A
Max. forward impulse current: 610A
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: ISOPLUS i4-pac™ x024a
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CPC1030N pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49250A75BE0C7&compId=CPC1030N.pdf?ci_sign=f5306a3547ebea4ac3441d82e07f700914fb2e7d
CPC1030N
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 120mA; max.350VAC
Case: SOP4
On-state resistance: 30Ω
Turn-off time: 1ms
Turn-on time: 2ms
Body dimensions: 4.09x3.81x2.03mm
Control current max.: 50mA
Max. operating current: 120mA
Insulation voltage: 1.5kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Kind of output: MOSFET
Mounting: SMT
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Switched voltage: max. 350V AC; max. 350V DC
на замовлення 127 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+140.42 грн
10+111.07 грн
100+98.19 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXYH40N65B3D1 IXYH(Q)40N65B3D1.pdf
IXYH40N65B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 195A
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Turn-on time: 57ns
Turn-off time: 350ns
Technology: GenX3™; Planar; XPT™
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IXYH40N65C3D1 IXYH(Q)40N65C3D1.pdf
IXYH40N65C3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Turn-on time: 64ns
Turn-off time: 160ns
Technology: GenX3™; Planar; XPT™
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IXYH40N65C3H1 IXYH40N65C3H1.pdf
IXYH40N65C3H1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 40A; 300W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 300W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 180A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 206ns
Technology: GenX3™; Planar; XPT™
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IXXH140N65B4 IXXH140N65B4.pdf
IXXH140N65B4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 840A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 128ns
Turn-off time: 340ns
Technology: GenX4™; Trench; XPT™
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IXXH140N65C4 IXXH140N65C4.pdf
IXXH140N65C4
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX4™; 650V; 140A; 1.2kW; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 140A
Power dissipation: 1.2kW
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 730A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Turn-on time: 114ns
Turn-off time: 273ns
Technology: GenX4™; Trench; XPT™
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IXFT15N100Q3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CECE0AF857958BF&compId=IXF_15N100Q3.pdf?ci_sign=1dd331295c1d7ea0154eeba2040fc94c4aba0ac2
IXFT15N100Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 690W
Case: TO268
On-state resistance: 1.05Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: tube
Kind of channel: enhancement
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IXTA05N100 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CFC3007D5820&compId=IXTA(P)05N100_HV.pdf?ci_sign=7a5ec5e1cee1b6c6154e445efc3fb4608695a56f
IXTA05N100
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
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IXTA05N100HV IXTA(P)05N100_HV.pdf
IXTA05N100HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 40W
Case: TO263HV
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
On-state resistance: 17Ω
Drain current: 0.75A
Drain-source voltage: 1kV
на замовлення 290 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+247.89 грн
3+213.29 грн
10+188.34 грн
50+181.09 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP05N100 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CFC3007D5820&compId=IXTA(P)05N100_HV.pdf?ci_sign=7a5ec5e1cee1b6c6154e445efc3fb4608695a56f
IXTP05N100
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO220AB; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO220AB
On-state resistance: 17Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
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IXTP05N100P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9752F12CB820&compId=IXTP05N100P.pdf?ci_sign=d4781f4c3352d29dcd458ddadab27f78de1e370d
IXTP05N100P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.5A; 50W; TO220AB; 750ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.5A
Power dissipation: 50W
Case: TO220AB
On-state resistance: 30Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 750ns
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IXDN614SI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A5D71347C948CA50&compId=IXDD614CI-DTE.pdf?ci_sign=56f1c241270a7cf5231e597905eedca728d0721d
IXDN614SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+229.69 грн
5+190.75 грн
Мінімальне замовлення: 2
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IXFN220N20X3 IXFN220N20X3.pdf 200VProductBrief.pdf
IXFN220N20X3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 200V; 160A; SOT227B; screw; Idm: 500A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 200V
Drain current: 160A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 6.2mΩ
Pulsed drain current: 500A
Power dissipation: 390W
Technology: HiPerFET™; X3-Class
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 128ns
Gate charge: 204nC
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2608.96 грн
В кошику  од. на суму  грн.
IXTX8N150L IXTK(X)8N150L.pdf
IXTX8N150L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.5kV; 8A; 700W; PLUS247™; 1.7us
Case: PLUS247™
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 8A
Gate charge: 250nC
Reverse recovery time: 1.7µs
On-state resistance: 3.6Ω
Power dissipation: 700W
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2693.04 грн
В кошику  од. на суму  грн.
IXTP2N65X2 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C89C4F8CE3158BF&compId=IXTP(Y)2N65X2.pdf?ci_sign=a1b44b73e461987c86a1219b0eef051f39a61060
IXTP2N65X2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 2A; 55W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 55W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 2.3Ω
Mounting: THT
Gate charge: 4.3nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 137ns
Technology: X2-Class
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IXTP24N65X2M IXTP24N65X2M.pdf
IXTP24N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 24A; 37W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 24A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Technology: X2-Class
на замовлення 91 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+308.57 грн
10+192.36 грн
50+185.12 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXGH36N60B3 IXGH36N60B3.pdf
IXGH36N60B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 45ns
Turn-off time: 350ns
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
на замовлення 225 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+393.51 грн
10+293.77 грн
30+247.89 грн
Мінімальне замовлення: 2
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IXGH36N60B3C1 IXGx36N60B3C1-DTE.pdf
IXGH36N60B3C1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector-emitter voltage: 600V
Turn-on time: 47ns
Turn-off time: 350ns
Collector current: 36A
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2365.40 грн
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MCD132-12io1 MCD132-12io1.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Semiconductor module: diode-thyristor; 1.2kV; 130A; Y4-M6; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
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MCD132-14io1 MCD132-14io1.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Semiconductor module: diode-thyristor; 1.4kV; 130A; Y4-M6; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.4kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
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MCD132-16io1 MCD132-16IO1.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Semiconductor module: diode-thyristor; 1.6kV; 130A; Y4-M6; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.6kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
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MCD132-18io1 MCD132-18io1.pdf PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Semiconductor module: diode-thyristor; 1.8kV; 130A; Y4-M6; bulk
Case: Y4-M6
Kind of package: bulk
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
Gate current: 150/200mA
Threshold on-voltage: 0.8V
Max. forward voltage: 1.08V
Load current: 130A
Max. load current: 300A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 4.75kA
Type of semiconductor module: diode-thyristor
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IXFL82N60P IXFL82N60P.pdf
IXFL82N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 55A; 625W; ISOPLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 55A
Power dissipation: 625W
Case: ISOPLUS264™
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+878.90 грн
В кошику  од. на суму  грн.
MCMA50P1200TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
MCMA50P1200TA
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 50A; TO240AA; Ufmax: 1.48V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.2kV
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: thyristor
на замовлення 25 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1681.52 грн
В кошику  од. на суму  грн.
MCMA50P1600TA pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 50A; TO240AA; Ufmax: 1.48V
Electrical mounting: screw
Mechanical mounting: screw
Gate current: 78/200mA
Max. forward voltage: 1.48V
Load current: 50A
Max. off-state voltage: 1.6kV
Kind of package: bulk
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: thyristor
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В кошику  од. на суму  грн.
MDMA50P1200TG pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82E9F44A6C80C4&compId=MDMA50P1200TG.pdf?ci_sign=c338cd758340ff753151ab05348149331307a229 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 50A; TO240AA; Ufmax: 1.09V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.2kV
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: diode
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В кошику  од. на суму  грн.
MDMA50P1600TG pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BB82F5CADE9380C4&compId=MDMA50P1600TG.pdf?ci_sign=0a5f5597242916f0250f9ce76767b1af5665c5e0 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB868934A0DC0DC&compId=PCN210930_TO240%20screw.pdf?ci_sign=fc1deaeffb9c0a234ca205e9ee1ec78950839dc9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB852A8E14A40DC&compId=PCN210915_TO240%20screw.pdf?ci_sign=1f8f5638dbc52f8c352e3e79d6ce5b26fd81478d
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 50A; TO240AA; Ufmax: 1.09V
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.09V
Load current: 50A
Max. forward impulse current: 850A
Max. off-state voltage: 1.6kV
Semiconductor structure: double series
Case: TO240AA
Type of semiconductor module: diode
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IXFN50N120SK media?resourcetype=datasheets&itemid=bd339330-b6b9-4c90-b751-d8293a8ae31c&filename=Littelfuse-Power-Semiconductors-IXFN50N120SK-Datasheet
IXFN50N120SK
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 48A; SOT227B; screw; SiC; 115nC
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1.2kV
Drain current: 48A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 50mΩ
Technology: SiC
Gate-source voltage: -5...20V
Mechanical mounting: screw
Features of semiconductor devices: Kelvin terminal
Reverse recovery time: 54ns
Gate charge: 115nC
Kind of channel: enhancement
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+6772.90 грн
3+5559.92 грн
В кошику  од. на суму  грн.
IXFH230N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F94D147F37820&compId=IXFH230N10T.pdf?ci_sign=7906ddc75f59da0a6c8caab968b9ecc6143741fa
IXFH230N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 230A; 650W; TO247-3; 82ns
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 250nC
Reverse recovery time: 82ns
On-state resistance: 4.7mΩ
Drain current: 230A
Power dissipation: 650W
Drain-source voltage: 100V
Kind of channel: enhancement
Case: TO247-3
на замовлення 7 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+637.07 грн
В кошику  од. на суму  грн.
IXFP130N10T2 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDDFC904CE7820&compId=IXFA(P)130N10T2.pdf?ci_sign=9f7a4995595efb7e18b0a338b9a9c0baa1ff9a83
IXFP130N10T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 130A; 360W; TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
Polarisation: unipolar
Gate charge: 130nC
On-state resistance: 10.1mΩ
Drain current: 130A
Power dissipation: 360W
Drain-source voltage: 100V
Kind of channel: enhancement
Case: TO220AB
на замовлення 42 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+272.16 грн
3+226.97 грн
10+201.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1560G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147D8C0C7&compId=CPC1560.pdf?ci_sign=c3c246383ef6fa3887c9a7b5b676f250f34749d1
CPC1560G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 300mA; max.60VAC
Mounting: THT
Case: DIP8
Contacts configuration: SPST-NO
Kind of output: MOSFET
Type of relay: solid state
Operating temperature: -40...85°C
Turn-on time: 0.1ms
Turn-off time: 400µs
Body dimensions: 9.65x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 300mA
On-state resistance: 5.6Ω
Switched voltage: max. 60V AC; max. 60V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
на замовлення 146 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+315.50 грн
10+257.55 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
VVZ110-12IO7 pVersion=0046&contRep=ZT&docId=005056AB82531EE98C861DB90B34D8BF&compId=VVZ110_VVZ175.pdf?ci_sign=07196062ed3a464ff7e33b39e08a02fdb9b7931a
Виробник: IXYS
Category: Three phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 110A; PWS-E
Version: module
Case: PWS-E
Leads: M6 screws
Electrical mounting: FASTON connectors; screw
Type of bridge rectifier: half-controlled
Mechanical mounting: screw
Gate current: 100/200mA
Max. forward voltage: 1.75V
Load current: 110A
Max. off-state voltage: 1.2kV
Max. forward impulse current: 1.35kA
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IXTH50P10 pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA07D75C831B8BF&compId=IXT_50P10.pdf?ci_sign=cc953308140627b6febcf9593e82ba0797b12d8b
IXTH50P10
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO247-3; 180ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO247-3
на замовлення 306 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+800.89 грн
10+634.22 грн
30+594.79 грн
120+545.69 грн
270+519.94 грн
В кошику  од. на суму  грн.
IXTT50P10 pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA07D75C831B8BF&compId=IXT_50P10.pdf?ci_sign=cc953308140627b6febcf9593e82ba0797b12d8b
IXTT50P10
Виробник: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -50A; 300W; TO268; 180ns
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -50A
Gate charge: 0.14µC
Reverse recovery time: 180ns
On-state resistance: 55mΩ
Gate-source voltage: ±20V
Power dissipation: 300W
Kind of package: tube
Case: TO268
на замовлення 17 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+652.67 грн
3+536.03 грн
10+481.30 грн
В кошику  од. на суму  грн.
IXFP60N25X3M IXFP60N25X3M.pdf
IXFP60N25X3M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 36W; TO220FP; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Case: TO220FP
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 36W
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+518.33 грн
3+426.57 грн
10+346.09 грн
В кошику  од. на суму  грн.
IXTN210P10T pVersion=0046&contRep=ZT&docId=005056AB752F1EE797949FD586272748&compId=IXTN210P10T.pdf?ci_sign=c7eaa6ff621298b381d20e5aabc3375642501283
IXTN210P10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; -100V; -210A; SOT227B; screw; Idm: -800A
Case: SOT227B
Semiconductor structure: single transistor
Polarisation: unipolar
Pulsed drain current: -800A
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 830W
Electrical mounting: screw
Kind of channel: enhancement
Mechanical mounting: screw
Technology: TrenchP™
Type of semiconductor module: MOSFET transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXTR210P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA04275137A38BF&compId=IXTR210P10T.pdf?ci_sign=6be69c09b119a4bc5566676e52a110aa09280e61
IXTR210P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -195A; 390W; 200ns
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -195A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 8mΩ
Gate-source voltage: ±15V
Power dissipation: 390W
Kind of channel: enhancement
Technology: TrenchP™
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2380.14 грн
3+1954.99 грн
10+1774.70 грн
В кошику  од. на суму  грн.
IXTX210P10T pVersion=0046&contRep=ZT&docId=005056AB82531EE98EA03E7174C718BF&compId=IXTX210P10T.pdf?ci_sign=eb9be669937aaa10adc6b2be9042b5a5749257a3
IXTX210P10T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -210A; 1040W
Case: PLUS247™
Mounting: THT
Kind of package: tube
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: -210A
Drain-source voltage: -100V
Gate charge: 740nC
Reverse recovery time: 200ns
On-state resistance: 7.5mΩ
Gate-source voltage: ±15V
Power dissipation: 1.04kW
Kind of channel: enhancement
Technology: TrenchP™
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1936.35 грн
10+1646.73 грн
В кошику  од. на суму  грн.
CPC1510G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004780C7&compId=CPC1510.pdf?ci_sign=dca2f490d390e88ab018824ec0cbe6d4e63b3e56
CPC1510G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+219.29 грн
50+197.19 грн
300+184.31 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1510GS pVersion=0046&contRep=ZT&docId=005056AB82531EE9958FDF2EB56DF8BF&compId=CPC1510.pdf?ci_sign=9749f199defe3add8fb64a51a16864787d36708b
CPC1510GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 200mA; max.250VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 200mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
On-state resistance: 15Ω
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 2ms
Turn-off time: 2ms
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 3.75kV
Kind of output: MOSFET
на замовлення 245 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+393.51 грн
50+335.62 грн
100+286.53 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
DSEC16-12A DSEC16-12A.pdf
DSEC16-12A
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 8Ax2; tube; Ifsm: 40A; TO220AB; 60W
Mounting: THT
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 40ns
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 2.94V
Max. off-state voltage: 1.2kV
Load current: 8A x2
Max. forward impulse current: 40A
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: TO220AB
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
товару немає в наявності
В кошику  од. на суму  грн.
DSEC16-12AS-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC4F5F44C2260C4&compId=DSEC16-12AS.pdf?ci_sign=7fe88d45cfa69a339b55e2fa6635825aa1a7704b
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.2kV; 8Ax2; 40ns; D2PAK; Ufmax: 1.96V; 60W
Mounting: SMD
Type of diode: rectifying
Kind of package: tube
Reverse recovery time: 40ns
Max. forward voltage: 1.96V
Max. off-state voltage: 1.2kV
Load current: 8A x2
Max. forward impulse current: 40A
Power dissipation: 60W
Semiconductor structure: common cathode; double
Case: D2PAK
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
товару немає в наявності
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IXTQ120N20P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9109183E093E27&compId=IXTK120N20P-DTE.pdf?ci_sign=8d92652847182241575b90496cedc624b85642c3
IXTQ120N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 200V; 120A; 714W; TO3P
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO3P
Technology: PolarHT™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 120A
Gate charge: 152nC
Reverse recovery time: 180ns
On-state resistance: 22mΩ
Gate-source voltage: ±20V
Power dissipation: 714W
на замовлення 2 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+701.21 грн
В кошику  од. на суму  грн.
PLB190 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78
PLB190
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 240 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+386.58 грн
10+311.48 грн
50+268.02 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLB190S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78
PLB190S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
на замовлення 12 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+384.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLB190STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7C40C7&compId=PLB190.pdf?ci_sign=43ecac0b7c199c1befebaefaa259b05c67cbcd78
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 25Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 1ms
Turn-off time: 2.5ms
Operating temperature: -40...85°C
товару немає в наявності
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IXTQ34N65X2M littelfuse_discrete_mosfets_n-channel_ultra_junction_ixtq34n65x2m_datasheet.pdf?assetguid=9e2804bf-85d4-45e2-ba6f-de4ee48d3cec
IXTQ34N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; Idm: 48A; 40W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Pulsed drain current: 48A
Power dissipation: 40W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 96mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 27 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+649.21 грн
3+541.67 грн
10+478.89 грн
В кошику  од. на суму  грн.
IXTQ48N65X2M
IXTQ48N65X2M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 15 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+793.09 грн
3+664.00 грн
10+586.74 грн
В кошику  од. на суму  грн.
IXFP60N25X3 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D48077B3DDB820&compId=IXFA(P%2CQ)60N25X3.pdf?ci_sign=40bf31d6f48e6a29413d60f94152aaab04d45448
IXFP60N25X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 60A; 320W; TO220AB; 95ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 60A
Power dissipation: 320W
Case: TO220AB
On-state resistance: 23mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Gate charge: 50nC
Reverse recovery time: 95ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+572.06 грн
3+494.98 грн
10+437.84 грн
50+368.62 грн
В кошику  од. на суму  грн.
IXTH32N65X pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CC14A9F2EB3820&compId=IXTH(P%2CQ)32N65X.pdf?ci_sign=6a88174097b72279f3942c45d4c91b42e2da5718
IXTH32N65X
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 32A; 500W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 32A
Power dissipation: 500W
Case: TO247-3
On-state resistance: 135mΩ
Mounting: THT
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Features of semiconductor devices: ultra junction x-class
на замовлення 157 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+512.26 грн
3+428.18 грн
10+378.28 грн
30+339.65 грн
В кошику  од. на суму  грн.
IXFN240N15T2 IXFN240N15T2.pdf
IXFN240N15T2
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 150V; 240A; SOT227B; screw; Idm: 600A
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 150V
Drain current: 240A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 5.2mΩ
Pulsed drain current: 600A
Power dissipation: 830W
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 460nC
Kind of channel: enhancement
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2121.84 грн
В кошику  од. на суму  грн.
DSS25-0025B pVersion=0046&contRep=ZT&docId=005056AB82531EE991CAD2C325DCD8BF&compId=DSS25-0025B.pdf?ci_sign=f6f65f217afdcd493a817c25caa07db6fbf77538
DSS25-0025B
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 25V; 25A; TO220AC; Ufmax: 0.44V
Type of diode: Schottky rectifying
Case: TO220AC
Mounting: THT
Max. off-state voltage: 25V
Load current: 25A
Semiconductor structure: single diode
Max. forward voltage: 0.44V
Max. forward impulse current: 330A
Kind of package: tube
Power dissipation: 90W
товару немає в наявності
В кошику  од. на суму  грн.
IXFN36N100 description pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA766581850B820&compId=IXFN36N100.pdf?ci_sign=ed624506c3a3f62202f258b7df94949020d4b004
IXFN36N100
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 36A; SOT227B; screw; Idm: 144A; 694W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 36A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.24Ω
Pulsed drain current: 144A
Power dissipation: 694W
Technology: HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 180ns
Gate charge: 380nC
Kind of channel: enhancement
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+6613.41 грн
3+5425.51 грн
10+4872.58 грн
В кошику  од. на суму  грн.
CPC1973Y CPC1973.pdf
CPC1973Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 0.35mA; max.400VAC
Case: SIP4
On-state resistance: 5Ω
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Max. operating current: 0.35mA
Turn-off time: 3ms
Turn-on time: 5ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
Switched voltage: max. 400V AC
Insulation voltage: 2.5kV
Manufacturer series: OptoMOS
Relay variant: 1-phase
на замовлення 44 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+360.57 грн
10+293.77 грн
25+267.21 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFB82N60Q3 IXFB82N60Q3.pdf
IXFB82N60Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 600V; 82A; 1560W; 300ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 82A
Power dissipation: 1.56kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Gate charge: 275nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Reverse recovery time: 300ns
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+972.51 грн
В кошику  од. на суму  грн.
IXTP15P15T IXT_15P15T.pdf
IXTP15P15T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -15A; 150W; 116ns
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -15A
Gate charge: 48nC
Reverse recovery time: 116ns
On-state resistance: 0.24Ω
Power dissipation: 150W
Gate-source voltage: ±15V
на замовлення 182 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+292.10 грн
10+248.70 грн
50+200.41 грн
100+176.26 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1218Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4928AF21340C7&compId=CPC1218.pdf?ci_sign=9c98dc3d6e8c890d0b45503495283d4f4da9397b
CPC1218Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Ucntrl: 5÷12VDC; 600mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control voltage: 5...12V DC
Max. operating current: 0.6A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 1.1Ω
Mounting: THT
Case: SIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Insulation voltage: 2.5kV
Kind of output: MOSFET
на замовлення 136 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+437.72 грн
10+319.53 грн
25+287.33 грн
50+263.19 грн
100+239.85 грн
В кошику  од. на суму  грн.
CPC1393G pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640
CPC1393G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
на замовлення 221 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+153.42 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
CPC1393GV pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49232004440C7&compId=CPC1393.pdf?ci_sign=734142b32e7627939a7043ba3b0eb9a9b8e4c640
CPC1393GV
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 90mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 90mA
Switched voltage: max. 600V AC; max. 600V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP4
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 4.57x6.35x3.3mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
на замовлення 500 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+233.16 грн
100+141.65 грн
500+114.29 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CMA50P1600FC pVersion=0046&contRep=ZT&docId=005056AB82531EE98CF097A4C94098BF&compId=CMA50P1600FC.pdf?ci_sign=b72ced94642464a929aa6ab7e507a6825f1b9885
CMA50P1600FC
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.6kV; Ifmax: 79A; 50A; Igt: 80/200mA; THT; tube
Mounting: THT
Type of thyristor: thyristor
Gate current: 80/200mA
Load current: 50A
Max. load current: 79A
Max. forward impulse current: 610A
Max. off-state voltage: 1.6kV
Kind of package: tube
Semiconductor structure: double series
Case: ISOPLUS i4-pac™ x024a
товару немає в наявності
В кошику  од. на суму  грн.
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