Продукція > IXYS > Всі товари виробника IXYS (16263) > Сторінка 257 з 272

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
IXYH60N90C3 IXYH60N90C3 IXYS IXYH60N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3
Type of transistor: IGBT
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 310A
Turn-on time: 104ns
Turn-off time: 268ns
Gate-emitter voltage: ±20V
Collector current: 60A
на замовлення 257 шт:
термін постачання 14-30 дні (днів)
1+760.72 грн
5+614.69 грн
10+556.96 грн
30+470.36 грн
60+466.96 грн
В кошику  од. на суму  грн.
IXDD604SI IXDD604SI IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 1291 шт:
термін постачання 14-30 дні (днів)
2+245.95 грн
10+173.20 грн
25+158.77 грн
50+153.67 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXDD604D2TR IXDD604D2TR IXYS IXDD604PI.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
товару немає в наявності
В кошику  од. на суму  грн.
IXDD604SITR IXDD604SITR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
товару немає в наявності
 Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IXGH50N90B2D1 IXGH50N90B2D1 IXYS IXG_50N90B2D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
на замовлення 240 шт:
термін постачання 14-30 дні (днів)
1+1350.46 грн
2+574.78 грн
3+573.94 грн
5+543.37 грн
В кошику  од. на суму  грн.
IXGH50N90B2 IXGH50N90B2 IXYS IXGH(T)50N90B2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: HiPerFAST™; XPT™
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
на замовлення 120 шт:
термін постачання 14-30 дні (днів)
1+585.17 грн
3+427.06 грн
7+404.13 грн
30+388.85 грн
В кошику  од. на суму  грн.
IXYN80N90C3H1 IXYN80N90C3H1 IXYS IXYN80N90C3H1.pdf Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 70A; SOT227B; 500W
Collector current: 70A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Type of semiconductor module: IGBT
Technology: GenX3™; XPT™
Mechanical mounting: screw
Max. off-state voltage: 900V
Electrical mounting: screw
Semiconductor structure: single transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXYT80N90C3 IXYT80N90C3 IXYS IXYH(T)80N90C3.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 80A
Power dissipation: 830W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 134ns
Turn-off time: 201ns
товару немає в наявності
В кошику  од. на суму  грн.
IXYH80N90C3 IXYH80N90C3 IXYS IXYH(T)80N90C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 80A
Power dissipation: 830W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 134ns
Turn-off time: 201ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFP50N20X3 IXFP50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
товару немає в наявності
В кошику  од. на суму  грн.
IXFA50N20X3 IXFA50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
товару немає в наявності
В кошику  од. на суму  грн.
IXFH150N20T IXFH150N20T IXYS IXFH(T)150N20T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFT150N20T IXFT150N20T IXYS IXFH(T)150N20T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXFA12N50P IXFA12N50P IXYS IXF_12N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
на замовлення 101 шт:
термін постачання 14-30 дні (днів)
3+213.95 грн
50+180.84 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXFP12N50P IXFP12N50P IXYS IXF_12N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
On-state resistance: 0.5Ω
товару немає в наявності
В кошику  од. на суму  грн.
IXTA12N50P IXTA12N50P IXYS IXTA12N50P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Technology: Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH16N80P IXFH16N80P IXYS IXFH16N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 70nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFT16N80P IXFT16N80P IXYS IXFH16N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFK180N15P IXFK180N15P IXYS IXFK180N15P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
DCG20B650LB-TUB IXYS Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 650V
Load current: 16A
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 2V
Features of semiconductor devices: Schottky
Technology: SiC
товару немає в наявності
В кошику  од. на суму  грн.
PLA150S PLA150S IXYS PLA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: SMT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 0.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
на замовлення 144 шт:
термін постачання 14-30 дні (днів)
1+480.02 грн
100+415.17 грн
В кошику  од. на суму  грн.
PLA150 PLA150 IXYS PLA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 0.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
1+626.31 грн
10+466.96 грн
50+425.36 грн
В кошику  од. на суму  грн.
PLB150S PLB150S IXYS PLB150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 1ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
1+1015.82 грн
2+538.28 грн
5+508.56 грн
В кошику  од. на суму  грн.
PAA191 PAA191 IXYS PAA191.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Insulation voltage: 5kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Case: DIP8
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Type of relay: solid state
Manufacturer series: OptoMOS
на замовлення 35 шт:
термін постачання 14-30 дні (днів)
1+1489.44 грн
В кошику  од. на суму  грн.
PBA150S PBA150S IXYS PBA150.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Mounting: SMT
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 250mA
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
1+1023.13 грн
10+801.47 грн
В кошику  од. на суму  грн.
IXXK200N60C3 IXXK200N60C3 IXYS IXXK(X)200N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Type of transistor: IGBT
Collector current: 200A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 1.63kW
Gate charge: 315nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 900A
Turn-on time: 143ns
Kind of package: tube
Case: TO264
Turn-off time: 240ns
Gate-emitter voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
IXXX300N60C3 IXXX300N60C3 IXYS IXXK(x)300N60C3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Type of transistor: IGBT
Collector current: 300A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 2.3kW
Gate charge: 438nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 1075A
Turn-on time: 128ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 278ns
Gate-emitter voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
IXTA02N250HV IXTA02N250HV IXYS IXTA(T)02N250HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 0.2A
Power dissipation: 83W
Case: TO263
On-state resistance: 450Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1.5µs
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTH02N250 IXTH02N250 IXYS IXTH02N250.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 450Ω
Reverse recovery time: 1.5µs
Mounting: THT
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTQ470P2 IXTQ470P2 IXYS IXTQ470P2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Power dissipation: 830W
Gate charge: 88nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Reverse recovery time: 400ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ120N15P IXTQ120N15P IXYS IXTQ120N15P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
On-state resistance: 16mΩ
Reverse recovery time: 150ns
Mounting: THT
Power dissipation: 600W
Gate charge: 150nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
товару немає в наявності
В кошику  од. на суму  грн.
IXXH75N60B3D1 IXXH75N60B3D1 IXYS IXXH75N60B3D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 108ns
Turn-off time: 315ns
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
CPC3960ZTR CPC3960ZTR IXYS CPC3960.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 44Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
на замовлення 776 шт:
термін постачання 14-30 дні (днів)
7+66.75 грн
10+46.70 грн
30+32.77 грн
81+30.99 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
IXFP38N30X3M IXFP38N30X3M IXYS IXFP38N30X3M.pdf 300VProductBrief.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
на замовлення 268 шт:
термін постачання 14-30 дні (днів)
2+361.16 грн
10+287.82 грн
50+260.65 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFB210N20P IXFB210N20P IXYS IXFB210N20P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.5kW
Case: PLUS264™
Mounting: THT
Gate charge: 255nC
Technology: HiPerFET™; Polar™
Drain current: 210A
Kind of channel: enhancement
Drain-source voltage: 200V
Kind of package: tube
On-state resistance: 10.5mΩ
товару немає в наявності
В кошику  од. на суму  грн.
MCB60I1200TZ-TUB IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; TO268AA
Case: TO268AA
Technology: SiC
Gate charge: 160C
Polarisation: unipolar
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25mΩ
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
MCB60P1200TLB-TRR IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B
Semiconductor structure: double series
Case: SMPD-B
Technology: SiC
Gate charge: 161nC
Polarisation: unipolar
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 25mΩ
Mounting: SMD
товару немає в наявності
 Мінімальне замовлення: 200 шт
В кошику  од. на суму  грн.
MCB60P1200TLB-TUB IXYS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B
Semiconductor structure: double series
Case: SMPD-B
Technology: SiC
Gate charge: 161nC
Polarisation: unipolar
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25mΩ
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
MDMA600P1600PTSF IXYS MDMA600P1600PTSF.pdf Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 600A; SimBus F; Ifsm: 15kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 15kA
Load current: 600A
товару немає в наявності
В кошику  од. на суму  грн.
MIXG240RF1200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Type of semiconductor module: IGBT
Technology: X2PT
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit
Semiconductor structure: diode/transistor
Case: E2-Pack PFP
Collector current: 250A
Topology: boost chopper
товару немає в наявності
В кошику  од. на суму  грн.
MITA300RF1700PTED IXYS media?resourcetype=datasheets&itemid=202c2010-df96-46c8-b404-30369d66b0f0&filename=mita300rf1700pted.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.7kV
Collector current: 310A
Case: E2-Pack PFP
Electrical mounting: Press-Fit
Mechanical mounting: screw
Technology: Trench
товару немає в наявності
В кошику  од. на суму  грн.
MIXA100W1200TEH IXYS MIXA100W1200TEH.pdf Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 108A
Case: E3-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 500W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
VVZB170-16ioXT IXYS VVZB170-16IOXT.pdf Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 500W
Technology: X2PT
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
MDNA360UB2200PTED IXYS MDNA360UB2200PTED.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 280A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 135A
Topology: boost chopper; NTC thermistor; three-phase diode bridge
товару немає в наявності
В кошику  од. на суму  грн.
MDNA210UB2200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper; NTC thermistor; three-phase diode bridge
товару немає в наявності
 Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
IXTP80N10T IXTP80N10T IXYS IXTA(P)80N10T.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 60nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
2+339.21 грн
10+217.35 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTT170N10P IXTT170N10P IXYS IXTK170N10P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Power dissipation: 715W
Gate charge: 198nC
Polarisation: unipolar
Technology: Polar™
Drain current: 170A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 9mΩ
Reverse recovery time: 120ns
Mounting: SMD
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
1+973.76 грн
3+650.35 грн
В кошику  од. на суму  грн.
IXTT88N30P IXTT88N30P IXYS IXTH88N30P-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Power dissipation: 600W
Gate charge: 180nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 88A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 40mΩ
Reverse recovery time: 250ns
Mounting: SMD
на замовлення 140 шт:
термін постачання 14-30 дні (днів)
1+1054.22 грн
5+837.13 грн
10+784.49 грн
В кошику  од. на суму  грн.
DSB40C15PB DSB40C15PB IXYS DSB40C15PB.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20Ax2; TO220AB; Ufmax: 0.39V
Mounting: THT
Max. forward impulse current: 390A
Max. forward voltage: 0.39V
Power dissipation: 70W
Max. off-state voltage: 15V
Heatsink thickness: 1.14...1.39mm
Load current: 20A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
4+120.69 грн
5+101.03 грн
10+89.15 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
MCMA110P1200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
MCMA140P1200TA IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
DSEI2X101-06P DSEI2X101-06P IXYS DSEI2X101-06P.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; ECO-PAC 2; THT
Electrical mounting: THT
Max. forward impulse current: 1.2kA
Max. forward voltage: 1.17V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Load current: 96A x2
Max. load current: 192A
Kind of package: bulk
Semiconductor structure: double independent
Case: ECO-PAC 2
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
1+1974.94 грн
3+1650.49 грн
10+1535.02 грн
В кошику  од. на суму  грн.
IXTK170P10P IXTK170P10P IXYS IXTK170P10P.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -170A
Power dissipation: 890W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 176ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTK17N120L IXTK17N120L IXYS IXTK(X)17N120L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; TO264; 1.83us
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.9Ω
Reverse recovery time: 1.83µs
Mounting: THT
Power dissipation: 700W
Gate charge: 155nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
PLB171PTR IXYS PLB171.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
 Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
DSSK30-018A DSSK30-018A IXYS DSSK30-018A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 180V; 15Ax2; TO247-3; Ufmax: 0.72V
Mounting: THT
Max. forward impulse current: 120A
Max. forward voltage: 0.72V
Power dissipation: 90W
Max. off-state voltage: 180V
Load current: 15A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Type of diode: Schottky rectifying
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTH64N10L2 IXTH64N10L2 IXYS IXTA(H,P)64N10L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: linear power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
DHG50X650NA DHG50X650NA IXYS DFE240X600NA.pdf Category: Diode modules
Description: Module: diode; double independent; 650V; If: 25Ax2; SOT227B; screw
Max. forward impulse current: 200A
Max. forward voltage: 2.03V
Type of semiconductor module: diode
Technology: Sonic FRD™
Mechanical mounting: screw
Max. off-state voltage: 650V
Electrical mounting: screw
Load current: 25A x2
Max. load current: 50A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
Reverse recovery time: 35ns
товару немає в наявності
В кошику  од. на суму  грн.
DFE250X600NA DFE250X600NA IXYS DFE250X600NA.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 125Ax2; SOT227B; screw
Max. forward impulse current: 1.2kA
Type of semiconductor module: diode
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 125A x2
Max. load current: 250A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ14N60P IXTQ14N60P IXYS IXTA(P,Q)14N60P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
товару немає в наявності
 Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXYH60N90C3 IXYH60N90C3.pdf
IXYH60N90C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 60A; 750W; TO247-3
Type of transistor: IGBT
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 310A
Turn-on time: 104ns
Turn-off time: 268ns
Gate-emitter voltage: ±20V
Collector current: 60A
на замовлення 257 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+760.72 грн
5+614.69 грн
10+556.96 грн
30+470.36 грн
60+466.96 грн
В кошику  од. на суму  грн.
IXDD604SI IXDD604PI.pdf
IXDD604SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
на замовлення 1291 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+245.95 грн
10+173.20 грн
25+158.77 грн
50+153.67 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXDD604D2TR IXDD604PI.pdf
IXDD604D2TR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DFN8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DFN8
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
товару немає в наявності
В кошику  од. на суму  грн.
IXDD604SITR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
IXDD604SITR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
товару немає в наявності
Мінімальне замовлення: 2000 шт
В кошику  од. на суму  грн.
IXGH50N90B2D1 IXG_50N90B2D1.pdf
IXGH50N90B2D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; HiPerFAST™; PT
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
на замовлення 240 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1350.46 грн
2+574.78 грн
3+573.94 грн
5+543.37 грн
В кошику  од. на суму  грн.
IXGH50N90B2 IXGH(T)50N90B2.pdf
IXGH50N90B2
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 50A; 400W; TO247-3
Type of transistor: IGBT
Technology: HiPerFAST™; XPT™
Collector-emitter voltage: 900V
Collector current: 50A
Power dissipation: 400W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 48ns
Turn-off time: 820ns
на замовлення 120 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+585.17 грн
3+427.06 грн
7+404.13 грн
30+388.85 грн
В кошику  од. на суму  грн.
IXYN80N90C3H1 IXYN80N90C3H1.pdf
IXYN80N90C3H1
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 900V; Ic: 70A; SOT227B; 500W
Collector current: 70A
Power dissipation: 500W
Case: SOT227B
Gate-emitter voltage: ±20V
Pulsed collector current: 340A
Type of semiconductor module: IGBT
Technology: GenX3™; XPT™
Mechanical mounting: screw
Max. off-state voltage: 900V
Electrical mounting: screw
Semiconductor structure: single transistor
товару немає в наявності
В кошику  од. на суму  грн.
IXYT80N90C3 IXYH(T)80N90C3.pdf
IXYT80N90C3
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO268
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 80A
Power dissipation: 830W
Case: TO268
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: SMD
Gate charge: 145nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 134ns
Turn-off time: 201ns
товару немає в наявності
В кошику  од. на суму  грн.
IXYH80N90C3 IXYH(T)80N90C3.pdf
IXYH80N90C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 80A; 830W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 900V
Collector current: 80A
Power dissipation: 830W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 360A
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Technology: GenX3™; Planar; XPT™
Turn-on time: 134ns
Turn-off time: 201ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFP50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
IXFP50N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
товару немає в наявності
В кошику  од. на суму  грн.
IXFA50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
IXFA50N20X3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
товару немає в наявності
В кошику  од. на суму  грн.
IXFH150N20T IXFH(T)150N20T.pdf
IXFH150N20T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO247-3; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO247-3
On-state resistance: 15mΩ
Mounting: THT
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXFT150N20T IXFH(T)150N20T.pdf
IXFT150N20T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 150A; 890W; TO268; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 150A
Power dissipation: 890W
Case: TO268
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 177nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 100ns
Features of semiconductor devices: thrench gate power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXFA12N50P IXF_12N50P.pdf
IXFA12N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Technology: HiPerFET™; Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
на замовлення 101 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
3+213.95 грн
50+180.84 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
IXFP12N50P IXF_12N50P.pdf
IXFP12N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
On-state resistance: 0.5Ω
товару немає в наявності
В кошику  од. на суму  грн.
IXTA12N50P IXTA12N50P-DTE.pdf
IXTA12N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Technology: Polar™
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 500V
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Reverse recovery time: 300ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH16N80P IXFH16N80P.pdf
IXFH16N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate charge: 70nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFT16N80P IXFH16N80P.pdf
IXFT16N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
товару немає в наявності
В кошику  од. на суму  грн.
IXFK180N15P IXFK180N15P.pdf
IXFK180N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 180A; 830W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 180A
Power dissipation: 830W
Case: TO264
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
DCG20B650LB-TUB
Виробник: IXYS
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 650V; 16A; SMPD-B; SMT; tube
Type of bridge rectifier: single-phase
Max. off-state voltage: 650V
Load current: 16A
Case: SMPD-B
Electrical mounting: SMT
Kind of package: tube
Max. forward voltage: 2V
Features of semiconductor devices: Schottky
Technology: SiC
товару немає в наявності
В кошику  од. на суму  грн.
PLA150S PLA150.pdf
PLA150S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: SMT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 0.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
на замовлення 144 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+480.02 грн
100+415.17 грн
В кошику  од. на суму  грн.
PLA150 PLA150.pdf
PLA150
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 0.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
на замовлення 95 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+626.31 грн
10+466.96 грн
50+425.36 грн
В кошику  од. на суму  грн.
PLB150S PLB150.pdf
PLB150S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Mounting: SMT
Type of relay: solid state
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 8.38x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 1ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP6
Max. operating current: 250mA
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
на замовлення 32 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1015.82 грн
2+538.28 грн
5+508.56 грн
В кошику  од. на суму  грн.
PAA191 PAA191.pdf
PAA191
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 250mA; OptoMOS
Mounting: THT
Relay variant: 1-phase; current source
Kind of output: MOSFET
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO x2
Insulation voltage: 5kV
Turn-on time: 3ms
Switched voltage: max. 400V AC; max. 400V DC
Case: DIP8
Max. operating current: 250mA
Turn-off time: 1ms
Control current max.: 50mA
On-state resistance: 8Ω
Type of relay: solid state
Manufacturer series: OptoMOS
на замовлення 35 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1489.44 грн
В кошику  од. на суму  грн.
PBA150S PBA150.pdf
PBA150S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO + SPST-NC; Icntrl max: 50mA; 250mA
Mounting: SMT
Relay variant: 1-phase; current source
Body dimensions: 9.65x6.35x3.3mm
Operating temperature: -40...85°C
Contacts configuration: SPST-NO + SPST-NC
Insulation voltage: 3.75kV
Turn-on time: 2.5ms
Switched voltage: max. 250V AC; max. 250V DC
Case: DIP8
Max. operating current: 250mA
Turn-off time: 2.5ms
Control current max.: 50mA
On-state resistance: 7Ω
Type of relay: solid state
Manufacturer series: OptoMOS
на замовлення 46 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1023.13 грн
10+801.47 грн
В кошику  од. на суму  грн.
IXXK200N60C3 IXXK(X)200N60C3.pdf
IXXK200N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 200A; 1.63kW; TO264
Type of transistor: IGBT
Collector current: 200A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 1.63kW
Gate charge: 315nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 900A
Turn-on time: 143ns
Kind of package: tube
Case: TO264
Turn-off time: 240ns
Gate-emitter voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
IXXX300N60C3 IXXK(x)300N60C3.pdf
IXXX300N60C3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 300A; 2.3kW; PLUS247™
Type of transistor: IGBT
Collector current: 300A
Mounting: THT
Collector-emitter voltage: 600V
Power dissipation: 2.3kW
Gate charge: 438nC
Technology: GenX3™; Planar; XPT™
Pulsed collector current: 1075A
Turn-on time: 128ns
Kind of package: tube
Case: PLUS247™
Turn-off time: 278ns
Gate-emitter voltage: ±20V
товару немає в наявності
В кошику  од. на суму  грн.
IXTA02N250HV IXTA(T)02N250HV.pdf
IXTA02N250HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO263; 1.5us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2.5kV
Drain current: 0.2A
Power dissipation: 83W
Case: TO263
On-state resistance: 450Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 1.5µs
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTH02N250 IXTH02N250.pdf
IXTH02N250
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2.5kV; 0.2A; 83W; TO247-3; 1.5us
Power dissipation: 83W
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 2.5kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO247-3
On-state resistance: 450Ω
Reverse recovery time: 1.5µs
Mounting: THT
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTQ470P2 IXTQ470P2.pdf
IXTQ470P2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 42A; 830W; TO3P; 400ns
Case: TO3P
Mounting: THT
On-state resistance: 0.145Ω
Kind of package: tube
Power dissipation: 830W
Gate charge: 88nC
Polarisation: unipolar
Features of semiconductor devices: standard power mosfet
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 500V
Type of transistor: N-MOSFET
Reverse recovery time: 400ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ120N15P IXTQ120N15P-DTE.pdf
IXTQ120N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO3P
On-state resistance: 16mΩ
Reverse recovery time: 150ns
Mounting: THT
Power dissipation: 600W
Gate charge: 150nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 150V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO3P
товару немає в наявності
В кошику  од. на суму  грн.
IXXH75N60B3D1 IXXH75N60B3D1.pdf
IXXH75N60B3D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 75A
Power dissipation: 750W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Pulsed collector current: 300A
Turn-on time: 108ns
Turn-off time: 315ns
Gate charge: 107nC
Technology: GenX3™; Planar; XPT™
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
CPC3960ZTR CPC3960.pdf
CPC3960ZTR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 0.1A; 1.8W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 0.1A
Power dissipation: 1.8W
Case: SOT223
Gate-source voltage: ±15V
On-state resistance: 44Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: depletion
на замовлення 776 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
7+66.75 грн
10+46.70 грн
30+32.77 грн
81+30.99 грн
Мінімальне замовлення: 7 шт
В кошику  од. на суму  грн.
IXFP38N30X3M IXFP38N30X3M.pdf 300VProductBrief.pdf
IXFP38N30X3M
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: HiPerFET™; X3-Class
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 38A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 90ns
на замовлення 268 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+361.16 грн
10+287.82 грн
50+260.65 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXFB210N20P IXFB210N20P.pdf
IXFB210N20P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 200V; 210A; 1500W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 1.5kW
Case: PLUS264™
Mounting: THT
Gate charge: 255nC
Technology: HiPerFET™; Polar™
Drain current: 210A
Kind of channel: enhancement
Drain-source voltage: 200V
Kind of package: tube
On-state resistance: 10.5mΩ
товару немає в наявності
В кошику  од. на суму  грн.
MCB60I1200TZ-TUB
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; TO268AA
Case: TO268AA
Technology: SiC
Gate charge: 160C
Polarisation: unipolar
Drain current: 70A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25mΩ
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
MCB60P1200TLB-TRR
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B
Semiconductor structure: double series
Case: SMPD-B
Technology: SiC
Gate charge: 161nC
Polarisation: unipolar
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: reel; tape
On-state resistance: 25mΩ
Mounting: SMD
товару немає в наявності
Мінімальне замовлення: 200 шт
В кошику  од. на суму  грн.
MCB60P1200TLB-TUB
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 62A; SMPD-B
Semiconductor structure: double series
Case: SMPD-B
Technology: SiC
Gate charge: 161nC
Polarisation: unipolar
Drain current: 62A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
On-state resistance: 25mΩ
Mounting: SMD
товару немає в наявності
В кошику  од. на суму  грн.
MDMA600P1600PTSF MDMA600P1600PTSF.pdf
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 600A; SimBus F; Ifsm: 15kA
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Case: SimBus F
Electrical mounting: Press-Fit
Mechanical mounting: screw
Kind of package: bulk
Max. forward impulse current: 15kA
Load current: 600A
товару немає в наявності
В кошику  од. на суму  грн.
MIXG240RF1200PTED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; X2PT
Type of semiconductor module: IGBT
Technology: X2PT
Mechanical mounting: screw
Max. off-state voltage: 1.2kV
Electrical mounting: Press-Fit
Semiconductor structure: diode/transistor
Case: E2-Pack PFP
Collector current: 250A
Topology: boost chopper
товару немає в наявності
В кошику  од. на суму  грн.
MITA300RF1700PTED media?resourcetype=datasheets&itemid=202c2010-df96-46c8-b404-30369d66b0f0&filename=mita300rf1700pted.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.7kV
Collector current: 310A
Case: E2-Pack PFP
Electrical mounting: Press-Fit
Mechanical mounting: screw
Technology: Trench
товару немає в наявності
В кошику  од. на суму  грн.
MIXA100W1200TEH MIXA100W1200TEH.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT three-phase bridge; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 108A
Case: E3-Pack
Application: motors; photovoltaics
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 500W
Technology: Sonic FRD™; XPT™
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
VVZB170-16ioXT VVZB170-16IOXT.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/thyristor/IGBT; boost chopper; Urmax: 1.2kV
Type of semiconductor module: IGBT
Semiconductor structure: diode/thyristor/IGBT
Topology: 3-phase diode-thyristor bridge; boost chopper; NTC thermistor
Max. off-state voltage: 1.2kV
Collector current: 140A
Case: E2-Pack
Application: Inverter
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Power dissipation: 500W
Technology: X2PT
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
MDNA360UB2200PTED MDNA360UB2200PTED.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 280A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 135A
Topology: boost chopper; NTC thermistor; three-phase diode bridge
товару немає в наявності
В кошику  од. на суму  грн.
MDNA210UB2200PTED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Type of semiconductor module: IGBT
Mechanical mounting: screw
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Semiconductor structure: diode/transistor
Case: E2-Pack
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper; NTC thermistor; three-phase diode bridge
товару немає в наявності
Мінімальне замовлення: 28 шт
В кошику  од. на суму  грн.
IXTP80N10T IXTA(P)80N10T.pdf
IXTP80N10T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 80A; 230W; TO220AB; 100ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 80A
Power dissipation: 230W
Case: TO220AB
On-state resistance: 14mΩ
Mounting: THT
Kind of channel: enhancement
Reverse recovery time: 100ns
Gate charge: 60nC
Features of semiconductor devices: thrench gate power mosfet
Kind of package: tube
на замовлення 44 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
2+339.21 грн
10+217.35 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
IXTT170N10P IXTK170N10P-DTE.pdf
IXTT170N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Power dissipation: 715W
Gate charge: 198nC
Polarisation: unipolar
Technology: Polar™
Drain current: 170A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 9mΩ
Reverse recovery time: 120ns
Mounting: SMD
на замовлення 13 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+973.76 грн
3+650.35 грн
В кошику  од. на суму  грн.
IXTT88N30P IXTH88N30P-DTE.pdf
IXTT88N30P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 300V; 88A; 600W; TO268
Power dissipation: 600W
Gate charge: 180nC
Polarisation: unipolar
Technology: PolarHT™
Drain current: 88A
Kind of channel: enhancement
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO268
On-state resistance: 40mΩ
Reverse recovery time: 250ns
Mounting: SMD
на замовлення 140 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1054.22 грн
5+837.13 грн
10+784.49 грн
В кошику  од. на суму  грн.
DSB40C15PB DSB40C15PB.pdf
DSB40C15PB
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 15V; 20Ax2; TO220AB; Ufmax: 0.39V
Mounting: THT
Max. forward impulse current: 390A
Max. forward voltage: 0.39V
Power dissipation: 70W
Max. off-state voltage: 15V
Heatsink thickness: 1.14...1.39mm
Load current: 20A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO220AB
Type of diode: Schottky rectifying
на замовлення 48 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
4+120.69 грн
5+101.03 грн
10+89.15 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
MCMA110P1200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 110A; Ifmax: 170A; TO240AA
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 110A
Max. load current: 170A
Case: TO240AA
Max. forward voltage: 1.57V
Max. forward impulse current: 1.9kA
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
MCMA140P1200TA PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Thyristor modules
Description: Module: thyristor; double series; 1.2kV; 140A; TO240AA; Ufmax: 1.7V
Type of semiconductor module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 140A
Case: TO240AA
Max. forward voltage: 1.7V
Gate current: 150/200mA
Electrical mounting: screw
Kind of package: bulk
Mechanical mounting: screw
товару немає в наявності
В кошику  од. на суму  грн.
DSEI2X101-06P DSEI2X101-06P.pdf
DSEI2X101-06P
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 96Ax2; ECO-PAC 2; THT
Electrical mounting: THT
Max. forward impulse current: 1.2kA
Max. forward voltage: 1.17V
Type of semiconductor module: diode
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Load current: 96A x2
Max. load current: 192A
Kind of package: bulk
Semiconductor structure: double independent
Case: ECO-PAC 2
на замовлення 25 шт:
термін постачання 14-30 дні (днів)
КількістьЦіна без ПДВ
1+1974.94 грн
3+1650.49 грн
10+1535.02 грн
В кошику  од. на суму  грн.
IXTK170P10P IXTK170P10P.pdf
IXTK170P10P
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; PolarP™; unipolar; -100V; -170A; 890W; TO264
Type of transistor: P-MOSFET
Technology: PolarP™
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -170A
Power dissipation: 890W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 176ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTK17N120L IXTK(X)17N120L.pdf
IXTK17N120L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 17A; 700W; TO264; 1.83us
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO264
On-state resistance: 0.9Ω
Reverse recovery time: 1.83µs
Mounting: THT
Power dissipation: 700W
Gate charge: 155nC
Polarisation: unipolar
Features of semiconductor devices: linear power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
PLB171PTR PLB171.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Body dimensions: 9.65x6.35x2.16mm
Insulation voltage: 5kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику  од. на суму  грн.
DSSK30-018A DSSK30-018A.pdf
DSSK30-018A
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 180V; 15Ax2; TO247-3; Ufmax: 0.72V
Mounting: THT
Max. forward impulse current: 120A
Max. forward voltage: 0.72V
Power dissipation: 90W
Max. off-state voltage: 180V
Load current: 15A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Case: TO247-3
Type of diode: Schottky rectifying
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.
IXTH64N10L2 IXTA(H,P)64N10L2.pdf
IXTH64N10L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 64A; 357W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 64A
Power dissipation: 357W
Case: TO247-3
On-state resistance: 32mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 180ns
Features of semiconductor devices: linear power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
DHG50X650NA DFE240X600NA.pdf
DHG50X650NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 650V; If: 25Ax2; SOT227B; screw
Max. forward impulse current: 200A
Max. forward voltage: 2.03V
Type of semiconductor module: diode
Technology: Sonic FRD™
Mechanical mounting: screw
Max. off-state voltage: 650V
Electrical mounting: screw
Load current: 25A x2
Max. load current: 50A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
Reverse recovery time: 35ns
товару немає в наявності
В кошику  од. на суму  грн.
DFE250X600NA DFE250X600NA.pdf
DFE250X600NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 125Ax2; SOT227B; screw
Max. forward impulse current: 1.2kA
Type of semiconductor module: diode
Technology: FRED
Mechanical mounting: screw
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 125A x2
Max. load current: 250A
Kind of package: tube
Semiconductor structure: double independent
Case: SOT227B
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ14N60P IXTA(P,Q)14N60P.pdf
IXTQ14N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
товару немає в наявності
Мінімальне замовлення: 300 шт
В кошику  од. на суму  грн.