| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
LAA125P | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS Kind of output: MOSFET Manufacturer series: OptoMOS Mounting: SMT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.66x6.35x2.16mm Max. operating current: 0.17A Control current max.: 50mA On-state resistance: 16Ω Switched voltage: max. 350V AC; max. 350V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Case: DIP8 Type of relay: solid state Contacts configuration: SPST-NO x2 |
на замовлення 100 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXFP14N85XM | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 850V Drain current: 14A Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 38W Features of semiconductor devices: ultra junction x-class Gate charge: 30nC Reverse recovery time: 116ns |
на замовлення 43 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXFP14N60P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 300W Case: TO220AB On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 36nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IXTA2N100P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 86W Case: TO263 Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 800ns Drain current: 2A Drain-source voltage: 1kV |
на замовлення 293 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXTY2N100P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 86W Case: TO252 Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: standard power mosfet Reverse recovery time: 800ns Drain current: 2A Drain-source voltage: 1kV |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXFR32N100Q3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™ Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 195nC On-state resistance: 0.35Ω Drain current: 23A Power dissipation: 570W Drain-source voltage: 1kV Kind of channel: enhancement Case: ISOPLUS247™ |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXFK52N100X | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns Drain-source voltage: 1kV Drain current: 52A Case: TO264 Polarisation: unipolar On-state resistance: 0.125Ω Power dissipation: 1.25kW Kind of channel: enhancement Gate charge: 245nC Reverse recovery time: 260ns Type of transistor: N-MOSFET Features of semiconductor devices: ultra junction x-class Kind of package: tube Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IXFN52N100X | IXYS |
Category: Transistor modules MOSFETDescription: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 44A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 0.125Ω Pulsed drain current: 100A Power dissipation: 830W Technology: HiPerFET™; X-Class Kind of channel: enhancement Gate charge: 245nC Reverse recovery time: 260ns Gate-source voltage: ±40V Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IXXH75N60B3D1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3 Type of transistor: IGBT Technology: GenX3™; Planar; XPT™ Power dissipation: 750W Case: TO247-3 Mounting: THT Gate charge: 107nC Kind of package: tube Pulsed collector current: 300A Collector-emitter voltage: 600V Turn-on time: 108ns Turn-off time: 315ns Gate-emitter voltage: ±20V Collector current: 75A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
CPC1788J | IXYS |
Category: DC Solid State RelaysDescription: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS Type of relay: solid state Max. operating current: 1.2A Switched voltage: max. 1kV DC Mounting: THT Case: ISOPLUS264™ Relay variant: current source Manufacturer series: OptoMOS Body dimensions: 19.91x26.16x5.03mm Turn-on time: 20ms Turn-off time: 5ms Contacts configuration: SPST-NO On-state resistance: 1.25Ω Control current max.: 100mA Kind of output: MOSFET Insulation voltage: 2.5kV Operating temperature: -40...85°C |
на замовлення 25 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
DSEP29-12A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 200A Case: TO220AC Max. forward voltage: 1.81V Power dissipation: 165W Reverse recovery time: 40ns Technology: HiPerFRED™ |
на замовлення 197 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXFH16N60P3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 347W Case: TO247-3 On-state resistance: 470mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 36nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IXYP8N90C3D1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Collector-emitter voltage: 900V Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT Mounting: THT Case: TO220-3 Kind of package: tube Gate charge: 13.3nC Turn-on time: 39ns Turn-off time: 238ns Collector current: 8A Gate-emitter voltage: ±20V Pulsed collector current: 48A Power dissipation: 125W |
на замовлення 126 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXYP8N90C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3 Collector-emitter voltage: 900V Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT Mounting: THT Case: TO220-3 Kind of package: tube Gate charge: 13.3nC Turn-on time: 39ns Turn-off time: 238ns Collector current: 8A Gate-emitter voltage: ±20V Pulsed collector current: 48A Power dissipation: 125W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IXFK220N20X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 220A Power dissipation: 960W Case: TO264 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: THT Gate charge: 204nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 116ns Technology: HiPerFET™; X3-Class |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
| MEA250-12DA | IXYS |
Category: Diode modulesDescription: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V Type of semiconductor module: diode Semiconductor structure: common anode Max. off-state voltage: 1.2kV Load current: 260A Case: Y4-M6 Max. forward voltage: 1.54V Max. forward impulse current: 2.4kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
XAA117S | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 150mA Switched voltage: max. 60V AC; max. 60V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 16Ω Mounting: SMT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXGA30N120B3 | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263 Type of transistor: IGBT Case: TO263 Technology: GenX3™; PT Kind of package: tube Mounting: SMD Turn-on time: 56ns Gate charge: 87nC Turn-off time: 471ns Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 150A Power dissipation: 300W Collector-emitter voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IXYH30N120C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3 Type of transistor: IGBT Case: TO247-3 Technology: GenX3™; XPT™ Kind of package: tube Mounting: THT Turn-on time: 71ns Gate charge: 69nC Turn-off time: 296ns Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 145A Power dissipation: 500W Collector-emitter voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IXFN30N120P | IXYS |
Category: Transistor modules MOSFETDescription: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A Case: SOT227B Kind of channel: enhancement Technology: HiPerFET™; Polar™ Type of semiconductor module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Polarisation: unipolar Gate-source voltage: ±40V Gate charge: 310nC Reverse recovery time: 300ns On-state resistance: 0.35Ω Drain current: 30A Pulsed drain current: 75A Power dissipation: 890W Drain-source voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IXFB30N120P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™ Type of transistor: N-MOSFET Case: PLUS264™ Kind of channel: enhancement Technology: HiPerFET™; Polar™ Kind of package: tube Mounting: THT Polarisation: unipolar Gate-source voltage: ±30V Gate charge: 310nC Reverse recovery time: 300ns On-state resistance: 0.35Ω Drain current: 30A Power dissipation: 1.25kW Drain-source voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IXGT30N120B3D1 | IXYS |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268 Type of transistor: IGBT Case: TO268 Technology: GenX3™; PT Kind of package: tube Mounting: SMD Turn-on time: 56ns Gate charge: 87nC Turn-off time: 471ns Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 150A Power dissipation: 300W Collector-emitter voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IXYH30N120C3D1 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3 Type of transistor: IGBT Case: TO247-3 Technology: GenX3™; Planar; XPT™ Kind of package: tube Mounting: THT Turn-on time: 71ns Gate charge: 69nC Turn-off time: 296ns Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 133A Power dissipation: 416W Collector-emitter voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IXYP30N120C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3 Type of transistor: IGBT Case: TO220-3 Technology: GenX3™; Planar; XPT™ Kind of package: tube Mounting: THT Turn-on time: 71ns Gate charge: 69nC Turn-off time: 296ns Gate-emitter voltage: ±20V Collector current: 30A Pulsed collector current: 145A Power dissipation: 500W Collector-emitter voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IXA33IF1200HB | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3 Type of transistor: IGBT Case: TO247-3 Technology: Sonic FRD™; XPT™ Kind of package: tube Mounting: THT Turn-on time: 110ns Gate charge: 76nC Turn-off time: 350ns Gate-emitter voltage: ±20V Collector current: 34A Pulsed collector current: 75A Power dissipation: 250W Collector-emitter voltage: 1.2kV |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
LOC112S | IXYS |
Category: Optocouplers - othersDescription: Optocoupler; SMD; Ch: 1; 3.75kV; 1A Type of optocoupler: optocoupler Insulation voltage: 3.75kV Trigger current: 1A Mounting: SMD Number of channels: 1 |
на замовлення 98 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXTP14N60PM | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 75W Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Reverse recovery time: 0.5µs Gate charge: 36nC Features of semiconductor devices: standard power mosfet |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IXTP230N04T4M | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 230A Power dissipation: 40W Case: TO220FP On-state resistance: 2.9mΩ Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 32ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IXFP30N25X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 170W Case: TO220AB On-state resistance: 60mΩ Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 82ns Features of semiconductor devices: ultra junction x-class |
на замовлення 291 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXFY30N25X3 | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 30A Power dissipation: 170W Case: TO252 On-state resistance: 60mΩ Mounting: SMD Gate charge: 21nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 82ns Features of semiconductor devices: ultra junction x-class |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXBN75N170A | IXYS |
Category: IGBT modulesDescription: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B Type of semiconductor module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.7kV Collector current: 42A Case: SOT227B Application: for UPS; motors Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 100A Mechanical mounting: screw Power dissipation: 500W Technology: BiMOSFET™ |
на замовлення 2 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXyH100N65C3 | IXYS |
Category: THT IGBT transistorsDescription: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3 Case: TO247-3 Technology: GenX3™; Planar; XPT™ Type of transistor: IGBT Kind of package: tube Mounting: THT Turn-on time: 62ns Gate charge: 172nC Turn-off time: 200ns Gate-emitter voltage: ±20V Power dissipation: 830W Collector current: 100A Pulsed collector current: 420A Collector-emitter voltage: 650V |
на замовлення 282 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXFP4N100P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Case: TO220AB Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 26nC Power dissipation: 150W |
на замовлення 419 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXDN609CI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: TO220-5 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 1061 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
DSEC120-12AK | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W Semiconductor structure: common cathode; double Features of semiconductor devices: fast switching Technology: HiPerFRED™ Type of diode: rectifying Kind of package: tube Case: TO264 Mounting: THT Reverse recovery time: 40ns Max. forward voltage: 2.66V Load current: 60A x2 Max. forward impulse current: 0.5kA Max. off-state voltage: 1.2kV Power dissipation: 330W |
на замовлення 21 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
XBB170 | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NC x2 Control current max.: 50mA Max. operating current: 0.1A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 50Ω Mounting: THT Case: DIP8 Body dimensions: 9.65x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 5ms Turn-off time: 5ms Kind of output: MOSFET Operating temperature: -40...85°C |
на замовлення 250 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
CPC1333GR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC Type of relay: solid state Contacts configuration: SPST-NC Control current max.: 50mA Max. operating current: 0.13A Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 30Ω Mounting: SMT Case: DIP4 Body dimensions: 4.57x6.35x3.3mm Insulation voltage: 5kV Turn-on time: 2ms Turn-off time: 3ms Kind of output: MOSFET Operating temperature: -40...85°C |
на замовлення 231 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
PLB171P | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC Type of relay: solid state Contacts configuration: SPST-NC Max. operating current: 80mA Switched voltage: max. 800V AC; max. 800V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 90Ω Mounting: SMT Operating temperature: -40...85°C Turn-on time: 5ms Turn-off time: 5ms Body dimensions: 9.65x6.35x2.16mm Control current max.: 50mA Insulation voltage: 5kV Kind of output: MOSFET |
на замовлення 57 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXTP102N15T | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 102A Power dissipation: 455W Case: TO220AB On-state resistance: 18mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Reverse recovery time: 97ns |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
DSEI30-12A | IXYS |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1.2kV; 26A; tube; Ifsm: 200A; TO247-2; 138W Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.2kV Load current: 26A Semiconductor structure: single diode Features of semiconductor devices: fast switching Kind of package: tube Max. forward impulse current: 200A Case: TO247-2 Max. forward voltage: 2.2V Power dissipation: 138W Reverse recovery time: 40ns Technology: FRED |
на замовлення 212 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
| LAA110LSTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS Type of relay: solid state Contacts configuration: SPST-NO x2 Control current max.: 50mA Max. operating current: 120mA Switched voltage: max. 350V AC; max. 350V DC Manufacturer series: OptoMOS Relay variant: 1-phase; current source On-state resistance: 35Ω Mounting: SMT Case: DIP8 Body dimensions: 9.66x6.35x3.3mm Insulation voltage: 3.75kV Turn-on time: 3ms Turn-off time: 3ms Kind of output: MOSFET Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
| MUBW25-06A6K | IXYS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A Collector current: 21A Power dissipation: 100W Case: E1-Pack Gate-emitter voltage: ±20V Pulsed collector current: 40A Mechanical mounting: screw Type of semiconductor module: IGBT Application: motors Technology: NPT Semiconductor structure: diode/transistor Max. off-state voltage: 0.6kV Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Electrical mounting: Press-in PCB |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
IXTP12N50P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 29nC Reverse recovery time: 300ns On-state resistance: 0.5Ω Kind of channel: enhancement Technology: Polar™ Drain current: 12A Gate-source voltage: ±30V Drain-source voltage: 500V |
на замовлення 294 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXFA12N50P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO263 Mounting: SMD Kind of package: tube Gate charge: 29nC Reverse recovery time: 300ns On-state resistance: 0.5Ω Kind of channel: enhancement Technology: HiPerFET™; Polar™ Drain current: 12A Gate-source voltage: ±30V Drain-source voltage: 500V |
на замовлення 116 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXFP12N50P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO220AB Mounting: THT Kind of package: tube Gate charge: 29nC On-state resistance: 0.5Ω Kind of channel: enhancement Drain current: 12A Drain-source voltage: 500V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IXTA12N50P | IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO263 Mounting: SMD Kind of package: tube Gate charge: 29nC Reverse recovery time: 300ns On-state resistance: 0.5Ω Kind of channel: enhancement Technology: Polar™ Drain current: 12A Gate-source voltage: ±30V Drain-source voltage: 500V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
IXFR26N100P | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™ Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 15A Power dissipation: 290W Case: ISOPLUS247™ On-state resistance: 0.43Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 197nC |
на замовлення 10 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
CPC1972GS | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase Type of relay: solid state Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 800V AC Relay variant: 1-phase Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
| CPC1972GSTR | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase Type of relay: solid state Control current max.: 50mA Max. operating current: 250mA Switched voltage: max. 800V AC Relay variant: 1-phase Mounting: SMT Case: DIP6 Body dimensions: 8.38x6.35x3.3mm Switching method: zero voltage switching Insulation voltage: 3.75kV Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||
|
IXFP38N30X3 | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO220AB Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 35nC Reverse recovery time: 90ns On-state resistance: 50mΩ Drain current: 38A Gate-source voltage: ±20V Power dissipation: 240W Drain-source voltage: 300V Kind of channel: enhancement Technology: HiPerFET™; X3-Class Case: TO220AB |
на замовлення 110 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXFP38N30X3M | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP Type of transistor: N-MOSFET Mounting: THT Kind of package: tube Polarisation: unipolar Gate charge: 35nC Reverse recovery time: 90ns On-state resistance: 50mΩ Drain current: 38A Gate-source voltage: ±20V Power dissipation: 34W Drain-source voltage: 300V Kind of channel: enhancement Technology: HiPerFET™; X3-Class Case: TO220FP |
на замовлення 295 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXDD614PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: non-inverting Turn-off time: 130ns Turn-on time: 140ns Supply voltage: 4.5...35V |
на замовлення 937 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXDI614PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -14...14A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Kind of output: inverting Turn-off time: 130ns Turn-on time: 140ns Supply voltage: 4.5...35V |
на замовлення 513 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXDN609PI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: DIP8 Output current: -9...9A Number of channels: 1 Mounting: THT Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 115ns Turn-off time: 105ns |
на замовлення 655 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXDD614SI | IXYS |
Category: MOSFET/IGBT driversDescription: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V Type of integrated circuit: driver Kind of integrated circuit: gate driver; low-side Case: SO8-EP Output current: -14...14A Number of channels: 1 Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Supply voltage: 4.5...35V Kind of output: non-inverting Turn-on time: 140ns Turn-off time: 130ns |
на замовлення 264 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
CPC1215G | IXYS |
Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.400VAC Case: DIP4 Mounting: THT Kind of output: MOSFET Type of relay: solid state Contacts configuration: SPST-NO Operating temperature: -40...85°C Turn-off time: 3ms Turn-on time: 5ms Body dimensions: 19.2x6.4x3.3mm Control current max.: 50mA Max. operating current: 0.5A On-state resistance: 6Ω Switched voltage: max. 400V AC; max. 400V DC Insulation voltage: 3.75kV Relay variant: 1-phase; current source Manufacturer series: OptoMOS |
на замовлення 342 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
CPC1708J | IXYS |
Category: DC Solid State RelaysDescription: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω Type of relay: solid state Contacts configuration: SPST-NO Max. operating current: 5350mA Switched voltage: max. 60V DC Manufacturer series: OptoMOS Relay variant: current source On-state resistance: 80mΩ Mounting: THT Case: i4-pac Operating temperature: -40...85°C Turn-on time: 20ms Turn-off time: 5ms Body dimensions: 19.91x20.88x5.03mm Control current max.: 50mA Insulation voltage: 2.5kV Kind of output: MOSFET |
на замовлення 144 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
MEE250-12DA | IXYS |
Category: Diode modulesDescription: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V Type of semiconductor module: diode Semiconductor structure: double series Max. off-state voltage: 1.2kV Load current: 260A Case: Y4-M6 Max. forward voltage: 1.54V Max. forward impulse current: 2.4kA Electrical mounting: screw Mechanical mounting: screw |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||
|
CS19-12HO1 | IXYS |
Category: SMD/THT thyristorsDescription: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube Max. off-state voltage: 1.2kV Load current: 20A Case: TO220AB Mounting: THT Max. load current: 31A Max. forward impulse current: 180A Kind of package: tube Type of thyristor: thyristor Gate current: 28mA |
на замовлення 436 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
|
IXTP8N70X2M | IXYS |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 8A Case: TO220FP On-state resistance: 0.55Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 32W Features of semiconductor devices: ultra junction x-class Gate charge: 12nC Reverse recovery time: 200ns |
на замовлення 298 шт: термін постачання 21-30 дні (днів) |
|
| LAA125P |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 170mA; OptoMOS
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.66x6.35x2.16mm
Max. operating current: 0.17A
Control current max.: 50mA
On-state resistance: 16Ω
Switched voltage: max. 350V AC; max. 350V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP8
Type of relay: solid state
Contacts configuration: SPST-NO x2
на замовлення 100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 293.20 грн |
| 100+ | 224.70 грн |
| IXFP14N85XM |
![]() |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 38W
Features of semiconductor devices: ultra junction x-class
Gate charge: 30nC
Reverse recovery time: 116ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 850V; 14A; 38W; TO220FP; 116ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 850V
Drain current: 14A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 38W
Features of semiconductor devices: ultra junction x-class
Gate charge: 30nC
Reverse recovery time: 116ns
на замовлення 43 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 370.92 грн |
| 3+ | 309.98 грн |
| 10+ | 273.90 грн |
| IXFP14N60P |
![]() |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO220AB
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
товару немає в наявності
В кошику
од. на суму грн.
| IXTA2N100P |
![]() |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Drain current: 2A
Drain-source voltage: 1kV
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO263; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 86W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Drain current: 2A
Drain-source voltage: 1kV
на замовлення 293 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 154.99 грн |
| 10+ | 141.05 грн |
| 50+ | 137.77 грн |
| IXTY2N100P |
![]() |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Drain current: 2A
Drain-source voltage: 1kV
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 2A; 86W; TO252; 800ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 86W
Case: TO252
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 800ns
Drain current: 2A
Drain-source voltage: 1kV
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 441.57 грн |
| IXFR32N100Q3 |
![]() |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 195nC
On-state resistance: 0.35Ω
Drain current: 23A
Power dissipation: 570W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: ISOPLUS247™
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; 570W; ISOPLUS247™
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 195nC
On-state resistance: 0.35Ω
Drain current: 23A
Power dissipation: 570W
Drain-source voltage: 1kV
Kind of channel: enhancement
Case: ISOPLUS247™
на замовлення 30 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3412.45 грн |
| 3+ | 2853.80 грн |
| 10+ | 2519.22 грн |
| 30+ | 2263.36 грн |
| IXFK52N100X |
![]() |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Drain-source voltage: 1kV
Drain current: 52A
Case: TO264
Polarisation: unipolar
On-state resistance: 0.125Ω
Power dissipation: 1.25kW
Kind of channel: enhancement
Gate charge: 245nC
Reverse recovery time: 260ns
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 52A; 1250W; TO264; 260ns
Drain-source voltage: 1kV
Drain current: 52A
Case: TO264
Polarisation: unipolar
On-state resistance: 0.125Ω
Power dissipation: 1.25kW
Kind of channel: enhancement
Gate charge: 245nC
Reverse recovery time: 260ns
Type of transistor: N-MOSFET
Features of semiconductor devices: ultra junction x-class
Kind of package: tube
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
| IXFN52N100X |
![]() |
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 44A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.125Ω
Pulsed drain current: 100A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Kind of channel: enhancement
Gate charge: 245nC
Reverse recovery time: 260ns
Gate-source voltage: ±40V
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 44A; SOT227B; screw; Idm: 100A; 830W
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 44A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 0.125Ω
Pulsed drain current: 100A
Power dissipation: 830W
Technology: HiPerFET™; X-Class
Kind of channel: enhancement
Gate charge: 245nC
Reverse recovery time: 260ns
Gate-source voltage: ±40V
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| IXXH75N60B3D1 |
![]() |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 108ns
Turn-off time: 315ns
Gate-emitter voltage: ±20V
Collector current: 75A
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 75A; 750W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; Planar; XPT™
Power dissipation: 750W
Case: TO247-3
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Pulsed collector current: 300A
Collector-emitter voltage: 600V
Turn-on time: 108ns
Turn-off time: 315ns
Gate-emitter voltage: ±20V
Collector current: 75A
товару немає в наявності
В кошику
од. на суму грн.
| CPC1788J |
![]() |
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Mounting: THT
Case: ISOPLUS264™
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 19.91x26.16x5.03mm
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 1.25Ω
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
Category: DC Solid State Relays
Description: Relay: solid state; 1200mA; max.1kVDC; THT; ISOPLUS264™; OptoMOS
Type of relay: solid state
Max. operating current: 1.2A
Switched voltage: max. 1kV DC
Mounting: THT
Case: ISOPLUS264™
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 19.91x26.16x5.03mm
Turn-on time: 20ms
Turn-off time: 5ms
Contacts configuration: SPST-NO
On-state resistance: 1.25Ω
Control current max.: 100mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
на замовлення 25 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1012.96 грн |
| 25+ | 827.44 грн |
| DSEP29-12A |
![]() |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 30A; tube; Ifsm: 200A; TO220AC; 165W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO220AC
Max. forward voltage: 1.81V
Power dissipation: 165W
Reverse recovery time: 40ns
Technology: HiPerFRED™
на замовлення 197 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 319.70 грн |
| 10+ | 186.97 грн |
| IXFH16N60P3 |
![]() |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO247-3
On-state resistance: 470mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 36nC
товару немає в наявності
В кошику
од. на суму грн.
| IXYP8N90C3D1 |
![]() |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
на замовлення 126 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 279.07 грн |
| 3+ | 232.90 грн |
| 10+ | 205.83 грн |
| 50+ | 185.33 грн |
| IXYP8N90C3 |
![]() |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 900V; 8A; 125W; TO220-3
Collector-emitter voltage: 900V
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Mounting: THT
Case: TO220-3
Kind of package: tube
Gate charge: 13.3nC
Turn-on time: 39ns
Turn-off time: 238ns
Collector current: 8A
Gate-emitter voltage: ±20V
Pulsed collector current: 48A
Power dissipation: 125W
товару немає в наявності
В кошику
од. на суму грн.
| IXFK220N20X3 |
![]() |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Technology: HiPerFET™; X3-Class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 220A; 960W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 220A
Power dissipation: 960W
Case: TO264
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: THT
Gate charge: 204nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 116ns
Technology: HiPerFET™; X3-Class
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1314.11 грн |
| 3+ | 1075.92 грн |
| 10+ | 975.87 грн |
| MEA250-12DA |
![]() |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Semiconductor structure: common anode
Max. off-state voltage: 1.2kV
Load current: 260A
Case: Y4-M6
Max. forward voltage: 1.54V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; common anode; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Semiconductor structure: common anode
Max. off-state voltage: 1.2kV
Load current: 260A
Case: Y4-M6
Max. forward voltage: 1.54V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| XAA117S |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 150mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 150mA
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 283.49 грн |
| 50+ | 173.03 грн |
| 250+ | 138.59 грн |
| IXGA30N120B3 |
![]() |
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Case: TO263
Technology: GenX3™; PT
Kind of package: tube
Mounting: SMD
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO263
Type of transistor: IGBT
Case: TO263
Technology: GenX3™; PT
Kind of package: tube
Mounting: SMD
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| IXYH30N120C3 |
![]() |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 71ns
Gate charge: 69nC
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Power dissipation: 500W
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 71ns
Gate charge: 69nC
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Power dissipation: 500W
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| IXFN30N120P |
![]() |
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Case: SOT227B
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Gate-source voltage: ±40V
Gate charge: 310nC
Reverse recovery time: 300ns
On-state resistance: 0.35Ω
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Drain-source voltage: 1.2kV
Category: Transistor modules MOSFET
Description: Module; single transistor; 1.2kV; 30A; SOT227B; screw; Idm: 75A
Case: SOT227B
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
Gate-source voltage: ±40V
Gate charge: 310nC
Reverse recovery time: 300ns
On-state resistance: 0.35Ω
Drain current: 30A
Pulsed drain current: 75A
Power dissipation: 890W
Drain-source voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| IXFB30N120P |
![]() |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 310nC
Reverse recovery time: 300ns
On-state resistance: 0.35Ω
Drain current: 30A
Power dissipation: 1.25kW
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 30A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Kind of package: tube
Mounting: THT
Polarisation: unipolar
Gate-source voltage: ±30V
Gate charge: 310nC
Reverse recovery time: 300ns
On-state resistance: 0.35Ω
Drain current: 30A
Power dissipation: 1.25kW
Drain-source voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| IXGT30N120B3D1 |
![]() |
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Case: TO268
Technology: GenX3™; PT
Kind of package: tube
Mounting: SMD
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
Category: SMD IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO268
Type of transistor: IGBT
Case: TO268
Technology: GenX3™; PT
Kind of package: tube
Mounting: SMD
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| IXYH30N120C3D1 |
![]() |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 71ns
Gate charge: 69nC
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 133A
Power dissipation: 416W
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 416W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 71ns
Gate charge: 69nC
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 133A
Power dissipation: 416W
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| IXYP30N120C3 |
![]() |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 71ns
Gate charge: 69nC
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Power dissipation: 500W
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 500W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Technology: GenX3™; Planar; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 71ns
Gate charge: 69nC
Turn-off time: 296ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 145A
Power dissipation: 500W
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| IXA33IF1200HB |
![]() |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: Sonic FRD™; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 110ns
Gate charge: 76nC
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 75A
Power dissipation: 250W
Collector-emitter voltage: 1.2kV
Category: THT IGBT transistors
Description: Transistor: IGBT; Sonic FRD™; 1.2kV; 34A; 250W; TO247-3
Type of transistor: IGBT
Case: TO247-3
Technology: Sonic FRD™; XPT™
Kind of package: tube
Mounting: THT
Turn-on time: 110ns
Gate charge: 76nC
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Collector current: 34A
Pulsed collector current: 75A
Power dissipation: 250W
Collector-emitter voltage: 1.2kV
товару немає в наявності
В кошику
од. на суму грн.
| LOC112S |
![]() |
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Trigger current: 1A
Mounting: SMD
Number of channels: 1
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; 3.75kV; 1A
Type of optocoupler: optocoupler
Insulation voltage: 3.75kV
Trigger current: 1A
Mounting: SMD
Number of channels: 1
на замовлення 98 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 222.55 грн |
| 5+ | 172.21 грн |
| 25+ | 154.99 грн |
| IXTP14N60PM |
![]() |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; 75W; TO220FP; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 75W
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Gate charge: 36nC
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику
од. на суму грн.
| IXTP230N04T4M |
![]() |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 230A; 40W; TO220FP; 32ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 230A
Power dissipation: 40W
Case: TO220FP
On-state resistance: 2.9mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 32ns
товару немає в наявності
В кошику
од. на суму грн.
| IXFP30N25X3 |
![]() |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO220AB; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO220AB
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
на замовлення 291 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 452.17 грн |
| 10+ | 282.92 грн |
| 50+ | 277.18 грн |
| IXFY30N25X3 |
![]() |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO252
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 30A; 170W; TO252; 82ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 30A
Power dissipation: 170W
Case: TO252
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 82ns
Features of semiconductor devices: ultra junction x-class
на замовлення 46 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 347.07 грн |
| 5+ | 284.56 грн |
| 25+ | 268.98 грн |
| IXBN75N170A |
![]() |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 42A
Case: SOT227B
Application: for UPS; motors
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mechanical mounting: screw
Power dissipation: 500W
Technology: BiMOSFET™
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 42A; SOT227B
Type of semiconductor module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.7kV
Collector current: 42A
Case: SOT227B
Application: for UPS; motors
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mechanical mounting: screw
Power dissipation: 500W
Technology: BiMOSFET™
на замовлення 2 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 4677.11 грн |
| IXyH100N65C3 |
![]() |
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 62ns
Gate charge: 172nC
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Power dissipation: 830W
Collector current: 100A
Pulsed collector current: 420A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 650V; 100A; 830W; TO247-3
Case: TO247-3
Technology: GenX3™; Planar; XPT™
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Turn-on time: 62ns
Gate charge: 172nC
Turn-off time: 200ns
Gate-emitter voltage: ±20V
Power dissipation: 830W
Collector current: 100A
Pulsed collector current: 420A
Collector-emitter voltage: 650V
на замовлення 282 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 761.27 грн |
| 5+ | 654.41 грн |
| 10+ | 624.06 грн |
| 30+ | 608.48 грн |
| IXFP4N100P |
![]() |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Power dissipation: 150W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 26nC
Power dissipation: 150W
на замовлення 419 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 257.88 грн |
| 3+ | 215.68 грн |
| 10+ | 190.25 грн |
| 50+ | 172.21 грн |
| IXDN609CI |
![]() |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; TO220-5; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: TO220-5
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 1061 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 228.73 грн |
| 10+ | 160.73 грн |
| 25+ | 154.99 грн |
| DSEC120-12AK |
![]() |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Kind of package: tube
Case: TO264
Mounting: THT
Reverse recovery time: 40ns
Max. forward voltage: 2.66V
Load current: 60A x2
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.2kV
Power dissipation: 330W
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 60Ax2; tube; Ifsm: 500A; TO264; 330W
Semiconductor structure: common cathode; double
Features of semiconductor devices: fast switching
Technology: HiPerFRED™
Type of diode: rectifying
Kind of package: tube
Case: TO264
Mounting: THT
Reverse recovery time: 40ns
Max. forward voltage: 2.66V
Load current: 60A x2
Max. forward impulse current: 0.5kA
Max. off-state voltage: 1.2kV
Power dissipation: 330W
на замовлення 21 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1298.22 грн |
| 3+ | 1093.96 грн |
| 10+ | 969.31 грн |
| XBB170 |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC x2; Icntrl max: 50mA; 100mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NC x2
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 50Ω
Mounting: THT
Case: DIP8
Body dimensions: 9.65x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 5ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 250 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 370.04 грн |
| 10+ | 300.14 грн |
| 250+ | 254.22 грн |
| CPC1333GR |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 130mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 0.13A
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 30Ω
Mounting: SMT
Case: DIP4
Body dimensions: 4.57x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 2ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 231 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 155.43 грн |
| 10+ | 113.99 грн |
| 100+ | 100.05 грн |
| PLB171P |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 80mA; max.800VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Max. operating current: 80mA
Switched voltage: max. 800V AC; max. 800V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 90Ω
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 5ms
Turn-off time: 5ms
Body dimensions: 9.65x6.35x2.16mm
Control current max.: 50mA
Insulation voltage: 5kV
Kind of output: MOSFET
на замовлення 57 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 450.40 грн |
| 10+ | 332.94 грн |
| 50+ | 303.42 грн |
| IXTP102N15T |
![]() |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 97ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 102A; 455W; TO220AB; 97ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 102A
Power dissipation: 455W
Case: TO220AB
On-state resistance: 18mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 97ns
товару немає в наявності
В кошику
од. на суму грн.
| DSEI30-12A |
![]() |
Виробник: IXYS
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26A; tube; Ifsm: 200A; TO247-2; 138W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 2.2V
Power dissipation: 138W
Reverse recovery time: 40ns
Technology: FRED
Category: THT universal diodes
Description: Diode: rectifying; THT; 1.2kV; 26A; tube; Ifsm: 200A; TO247-2; 138W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 26A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Kind of package: tube
Max. forward impulse current: 200A
Case: TO247-2
Max. forward voltage: 2.2V
Power dissipation: 138W
Reverse recovery time: 40ns
Technology: FRED
на замовлення 212 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 402.71 грн |
| 10+ | 242.74 грн |
| LAA110LSTR |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO x2; Icntrl max: 50mA; 120mA; OptoMOS
Type of relay: solid state
Contacts configuration: SPST-NO x2
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: SMT
Case: DIP8
Body dimensions: 9.66x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| MUBW25-06A6K |
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: motors
Technology: NPT
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 600V; Ic: 21A
Collector current: 21A
Power dissipation: 100W
Case: E1-Pack
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mechanical mounting: screw
Type of semiconductor module: IGBT
Application: motors
Technology: NPT
Semiconductor structure: diode/transistor
Max. off-state voltage: 0.6kV
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Electrical mounting: Press-in PCB
товару немає в наявності
В кошику
од. на суму грн.
| IXTP12N50P |
![]() |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
на замовлення 294 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 220.78 грн |
| 3+ | 183.69 грн |
| 10+ | 162.37 грн |
| 50+ | 146.79 грн |
| 250+ | 144.33 грн |
| IXFA12N50P |
![]() |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
на замовлення 116 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 213.72 грн |
| IXFP12N50P |
![]() |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Kind of channel: enhancement
Drain current: 12A
Drain-source voltage: 500V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO220AB
Mounting: THT
Kind of package: tube
Gate charge: 29nC
On-state resistance: 0.5Ω
Kind of channel: enhancement
Drain current: 12A
Drain-source voltage: 500V
товару немає в наявності
В кошику
од. на суму грн.
| IXTA12N50P |
![]() |
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 200W
Case: TO263
Mounting: SMD
Kind of package: tube
Gate charge: 29nC
Reverse recovery time: 300ns
On-state resistance: 0.5Ω
Kind of channel: enhancement
Technology: Polar™
Drain current: 12A
Gate-source voltage: ±30V
Drain-source voltage: 500V
товару немає в наявності
В кошику
од. на суму грн.
| IXFR26N100P |
![]() |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.43Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 197nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 15A; 290W; ISOPLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 15A
Power dissipation: 290W
Case: ISOPLUS247™
On-state resistance: 0.43Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 197nC
на замовлення 10 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 3186.37 грн |
| 3+ | 2662.73 грн |
| 10+ | 2352.75 грн |
| CPC1972GS |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| CPC1972GSTR |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| IXFP38N30X3 |
![]() |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 35nC
Reverse recovery time: 90ns
On-state resistance: 50mΩ
Drain current: 38A
Gate-source voltage: ±20V
Power dissipation: 240W
Drain-source voltage: 300V
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO220AB
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 240W; TO220AB
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 35nC
Reverse recovery time: 90ns
On-state resistance: 50mΩ
Drain current: 38A
Gate-source voltage: ±20V
Power dissipation: 240W
Drain-source voltage: 300V
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO220AB
на замовлення 110 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 316.16 грн |
| 3+ | 264.06 грн |
| 10+ | 233.72 грн |
| 50+ | 209.93 грн |
| IXFP38N30X3M |
![]() |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 35nC
Reverse recovery time: 90ns
On-state resistance: 50mΩ
Drain current: 38A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 300V
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 38A; 34W; TO220FP
Type of transistor: N-MOSFET
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 35nC
Reverse recovery time: 90ns
On-state resistance: 50mΩ
Drain current: 38A
Gate-source voltage: ±20V
Power dissipation: 34W
Drain-source voltage: 300V
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Case: TO220FP
на замовлення 295 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 308.22 грн |
| 10+ | 251.76 грн |
| IXDD614PI |
![]() |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
на замовлення 937 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 171.33 грн |
| 10+ | 118.91 грн |
| 25+ | 113.17 грн |
| IXDI614PI |
![]() |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -14...14A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 130ns
Turn-on time: 140ns
Supply voltage: 4.5...35V
на замовлення 513 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 254.34 грн |
| 10+ | 154.17 грн |
| 25+ | 133.67 грн |
| 50+ | 120.55 грн |
| 100+ | 118.09 грн |
| IXDN609PI |
![]() |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -9÷9A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -9...9A
Number of channels: 1
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 115ns
Turn-off time: 105ns
на замовлення 655 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 118.34 грн |
| 10+ | 81.19 грн |
| 50+ | 75.45 грн |
| IXDD614SI |
![]() |
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -14÷14A; Ch: 1; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -14...14A
Number of channels: 1
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 140ns
Turn-off time: 130ns
на замовлення 264 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 276.42 грн |
| 10+ | 192.71 грн |
| CPC1215G |
![]() |
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.400VAC
Case: DIP4
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Control current max.: 50mA
Max. operating current: 0.5A
On-state resistance: 6Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 500mA; max.400VAC
Case: DIP4
Mounting: THT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NO
Operating temperature: -40...85°C
Turn-off time: 3ms
Turn-on time: 5ms
Body dimensions: 19.2x6.4x3.3mm
Control current max.: 50mA
Max. operating current: 0.5A
On-state resistance: 6Ω
Switched voltage: max. 400V AC; max. 400V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Manufacturer series: OptoMOS
на замовлення 342 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 389.46 грн |
| 25+ | 232.08 грн |
| CPC1708J |
![]() |
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 5350mA
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 80mΩ
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
Category: DC Solid State Relays
Description: Relay: solid state; 5350mA; max.60VDC; THT; i4-pac; OptoMOS; 0.08Ω
Type of relay: solid state
Contacts configuration: SPST-NO
Max. operating current: 5350mA
Switched voltage: max. 60V DC
Manufacturer series: OptoMOS
Relay variant: current source
On-state resistance: 80mΩ
Mounting: THT
Case: i4-pac
Operating temperature: -40...85°C
Turn-on time: 20ms
Turn-off time: 5ms
Body dimensions: 19.91x20.88x5.03mm
Control current max.: 50mA
Insulation voltage: 2.5kV
Kind of output: MOSFET
на замовлення 144 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 813.37 грн |
| 10+ | 647.85 грн |
| 25+ | 608.48 грн |
| 100+ | 547.80 грн |
| MEE250-12DA |
![]() |
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 260A
Case: Y4-M6
Max. forward voltage: 1.54V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
Category: Diode modules
Description: Module: diode; double series; 1.2kV; If: 260A; Y4-M6; Ufmax: 1.54V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.2kV
Load current: 260A
Case: Y4-M6
Max. forward voltage: 1.54V
Max. forward impulse current: 2.4kA
Electrical mounting: screw
Mechanical mounting: screw
товару немає в наявності
В кошику
од. на суму грн.
| CS19-12HO1 | ![]() |
![]() |
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 20A
Case: TO220AB
Mounting: THT
Max. load current: 31A
Max. forward impulse current: 180A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 28mA
Category: SMD/THT thyristors
Description: Thyristor; 1.2kV; Ifmax: 31A; 20A; Igt: 28mA; TO220AB; THT; tube
Max. off-state voltage: 1.2kV
Load current: 20A
Case: TO220AB
Mounting: THT
Max. load current: 31A
Max. forward impulse current: 180A
Kind of package: tube
Type of thyristor: thyristor
Gate current: 28mA
на замовлення 436 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 244.63 грн |
| 3+ | 201.73 грн |
| 10+ | 159.09 грн |
| 50+ | 117.27 грн |
| IXTP8N70X2M |
![]() |
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 32W
Features of semiconductor devices: ultra junction x-class
Gate charge: 12nC
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 700V; 8A; 32W; TO220FP; 200ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Case: TO220FP
On-state resistance: 0.55Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 32W
Features of semiconductor devices: ultra junction x-class
Gate charge: 12nC
Reverse recovery time: 200ns
на замовлення 298 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.63 грн |
| 10+ | 140.23 грн |
| 30+ | 137.77 грн |



























