Продукція > IXYS > Всі товари виробника IXYS (16355) > Сторінка 261 з 273

Обрати Сторінку:   [  << Попередня Сторінка ]  1 27 54 81 108 135 162 189 216 243 256 257 258 259 260 261 262 263 264 265 266 270 273  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
IXFH30N50P IXFH30N50P IXYS IXFH30N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
1+621.47 грн
3+528.79 грн
5+504.64 грн
10+470.84 грн
В кошику  од. на суму  грн.
IXFH30N50Q3 IXFH30N50Q3 IXYS IXFH30N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ30N50L IXTQ30N50L IXYS IXTH(Q,T)30N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N50L IXTT30N50L IXYS IXTH(Q,T)30N50L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N50P IXTT30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTH30N50L2 IXTH30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXFT30N50P IXFT30N50P IXYS IXFH30N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFT30N50Q3 IXFT30N50Q3 IXYS IXFH30N50Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTH30N50P IXTH30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ30N50L2 IXTQ30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ30N50P IXTQ30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N50L2 IXTT30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTY14N60X2 IXTY14N60X2 IXYS IXTY14N60X2_DS_1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 16.7nC
товару немає в наявності
В кошику  од. на суму  грн.
MDD142-16N1 MDD142-16N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E076A735FF9E28&compId=MDD142-16N1-DTE.pdf?ci_sign=b81a928fa52fbbec2ea352c4ce2044d25f13adb9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4kA
Electrical mounting: screw
Max. load current: 300A
Mechanical mounting: screw
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+3857.10 грн
6+3348.19 грн
В кошику  од. на суму  грн.
CPC1966Y CPC1966Y IXYS CPC1966.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Max. operating current: 3A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Control current max.: 50mA
Insulation voltage: 3.75kV
Case: SIP4
Mounting: THT
Switching method: zero voltage switching
на замовлення 125 шт:
термін постачання 21-30 дні (днів)
2+393.51 грн
10+317.11 грн
25+284.11 грн
100+268.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTY1N120P IXTY1N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of package: tube
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
3+178.55 грн
5+148.90 грн
25+131.19 грн
70+125.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP2R4N120P IXTP2R4N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993964EAD3952F8BF&compId=IXT_2R4N120P.pdf?ci_sign=eb8ee9bf4f44f4620c1e19588ea25a870e1c1b6d Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
на замовлення 307 шт:
термін постачання 21-30 дні (днів)
1+440.32 грн
10+382.31 грн
50+315.50 грн
100+279.28 грн
250+272.04 грн
В кошику  од. на суму  грн.
VGO36-16IO7 VGO36-16IO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6236239A8C0C4&compId=VGO36-16io7.pdf?ci_sign=f9fb0bce59b8ae8122be8b955a3f251a5e31da08 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 36A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 36A
Max. forward impulse current: 280A
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Gate current: 65mA
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
1+1424.96 грн
3+1211.30 грн
5+1150.94 грн
В кошику  од. на суму  грн.
IXFT14N80P IXFT14N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ14N60P IXTQ14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTA180N10T IXTA180N10T IXYS IXTA(P)180N10T.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
2+396.98 грн
10+313.09 грн
25+259.16 грн
50+243.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTT170N10P IXTT170N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9185A4CE98DE27&compId=IXTK170N10P-DTE.pdf?ci_sign=9136904f8419278af3f28381c2ff94e364518191 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Kind of channel: enhancement
Case: TO268
Type of transistor: N-MOSFET
Mounting: SMD
Technology: Polar™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Gate charge: 198nC
Reverse recovery time: 120ns
On-state resistance: 9mΩ
Power dissipation: 715W
Gate-source voltage: ±20V
на замовлення 147 шт:
термін постачання 21-30 дні (днів)
1+873.70 грн
3+743.68 грн
5+695.39 грн
10+620.54 грн
30+565.01 грн
В кошику  од. на суму  грн.
IXFK140N30P IXFK140N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5FBBF2FB0F8BF&compId=IXFK140N30P_IXFX140N30P.pdf?ci_sign=6d081054787efa2c56b843d54a6d6c3f464460d2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 185nC
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Drain-source voltage: 300V
Power dissipation: 1.04kW
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
на замовлення 272 шт:
термін постачання 21-30 дні (днів)
1+1404.16 грн
5+1147.72 грн
10+1068.04 грн
В кошику  од. на суму  грн.
IXFR18N90P IXFR18N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B09820&compId=IXFR18N90P.pdf?ci_sign=630c9b0ce412688e2b82a725d5ca14f372c1c7c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 10.5A
Pulsed drain current: 36A
Power dissipation: 200W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+956.91 грн
3+798.41 грн
10+701.83 грн
В кошику  од. на суму  грн.
IXFH120N15P IXFH120N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Case: TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 16mΩ
Drain current: 120A
Power dissipation: 600W
Drain-source voltage: 150V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
на замовлення 207 шт:
термін постачання 21-30 дні (днів)
1+634.47 грн
5+504.64 грн
10+421.74 грн
В кошику  од. на суму  грн.
IXFH52N30P IXFH52N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5E98F50BC18BF&compId=IXF(V%2CH)52N30P(S).pdf?ci_sign=364d4b58b7cffdd5dffcd14a44a5a11a01598e3a Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 110nC
Reverse recovery time: 160ns
On-state resistance: 73mΩ
Gate-source voltage: ±20V
Drain current: 52A
Drain-source voltage: 300V
Power dissipation: 400W
на замовлення 282 шт:
термін постачання 21-30 дні (днів)
1+486.26 грн
5+383.11 грн
30+316.31 грн
В кошику  од. на суму  грн.
CPC1906Y CPC1906Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1900C7&compId=CPC1906.pdf?ci_sign=ecc876797bb2c9d84a9e02b4914db18b397562b5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 10ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
MDNA360UB2200PTED IXYS MDNA360UB2200PTED.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: E2-Pack
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 135A
Pulsed collector current: 280A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
товару немає в наявності
В кошику  од. на суму  грн.
MDNA210UB2200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: E2-Pack
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
товару немає в наявності
В кошику  од. на суму  грн.
MDNA280UB2200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: E2-Pack
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
товару немає в наявності
В кошику  од. на суму  грн.
CLA60MT1200NHB CLA60MT1200NHB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEF950EA5DBD8BF&compId=CLA60MT1200NHB.pdf?ci_sign=931ed8de95f4a498e58b92338e50a36a33e544fe Category: Triacs
Description: Triac; 1.2kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 325A
Kind of package: tube
Case: TO247-3
Mounting: THT
Type of thyristor: triac
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
1+571.20 грн
10+360.57 грн
В кошику  од. на суму  грн.
CLA80MT1200NHB CLA80MT1200NHB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA7822040C5C200C4&compId=CLA80MT1200NHB.pdf?ci_sign=b7d475d8ebe5374c36b717c8b05ac079131171a7 Category: Triacs
Description: Triac; 1.2kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 440A
Kind of package: tube
Mounting: THT
Case: TO247-3
Type of thyristor: triac
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
на замовлення 313 шт:
термін постачання 21-30 дні (днів)
1+671.74 грн
10+546.50 грн
30+472.45 грн
В кошику  од. на суму  грн.
CLA60MT1200NHR CLA60MT1200NHR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFAF1199F33C0C4&compId=CLA60MT1200NHR.pdf?ci_sign=667c2802955af27425e185a40228badc5bc85a18 Category: Triacs
Description: Triac; 1.2kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 325A
Kind of package: tube
Case: ISO247™
Mounting: THT
Type of thyristor: triac
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
1+842.50 грн
3+689.76 грн
10+619.74 грн
30+596.40 грн
В кошику  од. на суму  грн.
IXFP26N50P3 IXFP26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
1+587.67 грн
10+485.33 грн
50+426.57 грн
100+400.01 грн
250+371.84 грн
В кошику  од. на суму  грн.
FDA217S FDA217S IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Type of integrated circuit: driver
Operating temperature: -40...85°C
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
2+221.89 грн
3+188.34 грн
5+177.07 грн
10+171.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FMD15-06KC5 FMD15-06KC5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F522E6E4505820&compId=FMD15-06KC5.pdf?ci_sign=2f4352c0a860f23fb93ad3877941b2c9bd4b7589 Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A
Type of transistor: N-MOSFET
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: diode/transistor
Features of semiconductor devices: super junction coolmos
Topology: boost chopper
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+1190.07 грн
3+977.09 грн
В кошику  од. на суму  грн.
IXFH56N30X3 IXFH56N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBB8D50EDA38BF&compId=IXF_56N30X3.pdf?ci_sign=633f7ff7bbd4d5f73ecc58750c76abed9db4d947 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 56nC
Reverse recovery time: 115ns
On-state resistance: 27mΩ
Gate-source voltage: ±20V
Drain current: 56A
Drain-source voltage: 300V
Power dissipation: 320W
на замовлення 236 шт:
термін постачання 21-30 дні (днів)
1+612.80 грн
10+464.40 грн
В кошику  од. на суму  грн.
IXFH50N30Q3 IXFH50N30Q3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5E17586FE98BF&compId=IXFH50N30Q3_IXFT50N30Q3.pdf?ci_sign=52d892f03a88a92038e3318344d24f837885d158 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO247-3; 250ns
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 65nC
Reverse recovery time: 250ns
On-state resistance: 80mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 300V
Power dissipation: 690W
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
1+800.02 грн
10+701.83 грн
В кошику  од. на суму  грн.
IXFN420N10T IXFN420N10T IXYS IXFN420N10T.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 420A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.3mΩ
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 670nC
Kind of channel: enhancement
на замовлення 274 шт:
термін постачання 21-30 дні (днів)
1+2059.43 грн
5+1637.88 грн
10+1622.58 грн
В кошику  од. на суму  грн.
IXFT120N15P IXFT120N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Case: TO268
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 150nC
Reverse recovery time: 200ns
On-state resistance: 16mΩ
Drain current: 120A
Power dissipation: 600W
Drain-source voltage: 150V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; PolarHT™
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
1+760.15 грн
10+581.91 грн
30+457.16 грн
В кошику  од. на суму  грн.
IXFT120N25X3HV IXFT120N25X3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAAA7C92A91820&compId=IXFH(T%2CQ)120N25X3_HV.pdf?ci_sign=f0265349042830fefde5800576c2580ffda544fa Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Case: TO268HV
Polarisation: unipolar
Gate charge: 122nC
Reverse recovery time: 140ns
On-state resistance: 12mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 480W
Kind of package: tube
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
1+897.97 грн
В кошику  од. на суму  грн.
MMIX1F210N30P3
+1
 		MMIX1F210N30P3 IXYS media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Mounting: SMD
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 268nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 108A
Drain-source voltage: 300V
Power dissipation: 520W
Pulsed drain current: 550A
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Case: SMPD
Type of transistor: N-MOSFET
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
1+3501.73 грн
3+2871.72 грн
10+2581.97 грн
20+2578.75 грн
В кошику  од. на суму  грн.
IX4427NTR IX4427NTR IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
5+101.41 грн
10+59.16 грн
25+51.99 грн
50+47.41 грн
100+43.46 грн
250+39.04 грн
500+38.23 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IXTH24N50L IXTH24N50L IXYS IXTH24N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXGH16N170 IXGH16N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
IXGH16N170A IXGH16N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
IXGH6N170A IXGH6N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE62EB13C77820&compId=IXGh(T)6N170A.pdf?ci_sign=e3be7b7321a119c55baa6fb6dbef9aed2b2b65e8 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 14A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
IXTP10P15T IXTP10P15T IXYS IXT_10P15T.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Gate charge: 36nC
Reverse recovery time: 120ns
On-state resistance: 0.35Ω
Power dissipation: 83W
Gate-source voltage: ±15V
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
3+178.55 грн
10+133.61 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PLA150S PLA150S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 145 шт:
термін постачання 21-30 дні (днів)
2+248.76 грн
100+214.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLA150 PLA150 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
2+323.30 грн
10+240.65 грн
50+219.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA3N120 IXFA3N120 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39C93820&compId=IXFA3N120.pdf?ci_sign=8c812837976fee0aac5a23608e183a8630e51a8a Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 39nC
Drain current: 3A
Power dissipation: 200W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Case: TO263
на замовлення 321 шт:
термін постачання 21-30 дні (днів)
1+676.94 грн
3+575.47 грн
5+536.84 грн
10+474.86 грн
50+440.25 грн
В кошику  од. на суму  грн.
IXFK120N30T IXFK120N30T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD9A0D060F820&compId=IXFK(X)120N30T.pdf?ci_sign=f7ad151cb9d281d49ca96d548a02ff3a244c55e0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 265nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 960W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+433.38 грн
В кошику  од. на суму  грн.
IXFP270N06T3 IXFP270N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
товару немає в наявності
В кошику  од. на суму  грн.
IXFA270N06T3 IXFA270N06T3 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
товару немає в наявності
В кошику  од. на суму  грн.
IXFP50N20X3 IXFP50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
2+404.78 грн
3+338.84 грн
10+299.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA50N20X3 IXYS littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
товару немає в наявності
В кошику  од. на суму  грн.
IXBT16N170A IXBT16N170A IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD04849F0DFB820&compId=IXBH(T)16N170A.pdf?ci_sign=05b45852ed6e7230aca07a9203cce83faedf4e33 Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+1081.72 грн
3+882.12 грн
В кошику  од. на суму  грн.
IXBT16N170AHV IXBT16N170AHV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD01F9B98FE5820&compId=IXBA16N170AHV.pdf?ci_sign=95336b0cb3303bf228c8eebd741f5683b4c5f35c Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
1+1067.85 грн
3+882.12 грн
10+791.98 грн
В кошику  од. на суму  грн.
IXGP30N120B3 IXGP30N120B3 IXYS IXGA(H,P)30N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
1+780.09 грн
В кошику  од. на суму  грн.
LCB110 LCB110 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
3+184.62 грн
50+156.14 грн
250+140.04 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXFH30N50P IXFH30N50P.pdf
IXFH30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+621.47 грн
3+528.79 грн
5+504.64 грн
10+470.84 грн
В кошику  од. на суму  грн.
IXFH30N50Q3 IXFH30N50Q3.pdf
IXFH30N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ30N50L IXTH(Q,T)30N50L.pdf
IXTQ30N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N50L IXTH(Q,T)30N50L.pdf
IXTT30N50L
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTT30N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTH30N50L2 IXTH(Q,T)30N50L2.pdf
IXTH30N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXFT30N50P IXFH30N50P.pdf
IXFT30N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFT30N50Q3 IXFH30N50Q3.pdf
IXFT30N50Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTH30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTH30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ30N50L2 IXTH(Q,T)30N50L2.pdf
IXTQ30N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTQ30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N50L2 IXTH(Q,T)30N50L2.pdf
IXTT30N50L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTY14N60X2 IXTY14N60X2_DS_1.pdf
IXTY14N60X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 16.7nC
товару немає в наявності
В кошику  од. на суму  грн.
MDD142-16N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E076A735FF9E28&compId=MDD142-16N1-DTE.pdf?ci_sign=b81a928fa52fbbec2ea352c4ce2044d25f13adb9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MDD142-16N1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4kA
Electrical mounting: screw
Max. load current: 300A
Mechanical mounting: screw
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3857.10 грн
6+3348.19 грн
В кошику  од. на суму  грн.
CPC1966Y CPC1966.pdf
CPC1966Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Max. operating current: 3A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Control current max.: 50mA
Insulation voltage: 3.75kV
Case: SIP4
Mounting: THT
Switching method: zero voltage switching
на замовлення 125 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+393.51 грн
10+317.11 грн
25+284.11 грн
100+268.82 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTY1N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0
IXTY1N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of package: tube
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+178.55 грн
5+148.90 грн
25+131.19 грн
70+125.56 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP2R4N120P pVersion=0046&contRep=ZT&docId=005056AB82531EE993964EAD3952F8BF&compId=IXT_2R4N120P.pdf?ci_sign=eb8ee9bf4f44f4620c1e19588ea25a870e1c1b6d
IXTP2R4N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
на замовлення 307 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+440.32 грн
10+382.31 грн
50+315.50 грн
100+279.28 грн
250+272.04 грн
В кошику  од. на суму  грн.
VGO36-16IO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6236239A8C0C4&compId=VGO36-16io7.pdf?ci_sign=f9fb0bce59b8ae8122be8b955a3f251a5e31da08
VGO36-16IO7
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 36A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 36A
Max. forward impulse current: 280A
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Gate current: 65mA
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1424.96 грн
3+1211.30 грн
5+1150.94 грн
В кошику  од. на суму  грн.
IXFT14N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24
IXFT14N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d
IXTQ14N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTA180N10T IXTA(P)180N10T.pdf
IXTA180N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+396.98 грн
10+313.09 грн
25+259.16 грн
50+243.87 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTT170N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9185A4CE98DE27&compId=IXTK170N10P-DTE.pdf?ci_sign=9136904f8419278af3f28381c2ff94e364518191
IXTT170N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Kind of channel: enhancement
Case: TO268
Type of transistor: N-MOSFET
Mounting: SMD
Technology: Polar™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Gate charge: 198nC
Reverse recovery time: 120ns
On-state resistance: 9mΩ
Power dissipation: 715W
Gate-source voltage: ±20V
на замовлення 147 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+873.70 грн
3+743.68 грн
5+695.39 грн
10+620.54 грн
30+565.01 грн
В кошику  од. на суму  грн.
IXFK140N30P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5FBBF2FB0F8BF&compId=IXFK140N30P_IXFX140N30P.pdf?ci_sign=6d081054787efa2c56b843d54a6d6c3f464460d2
IXFK140N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 185nC
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Drain-source voltage: 300V
Power dissipation: 1.04kW
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
на замовлення 272 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1404.16 грн
5+1147.72 грн
10+1068.04 грн
В кошику  од. на суму  грн.
IXFR18N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B09820&compId=IXFR18N90P.pdf?ci_sign=630c9b0ce412688e2b82a725d5ca14f372c1c7c0
IXFR18N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 10.5A
Pulsed drain current: 36A
Power dissipation: 200W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+956.91 грн
3+798.41 грн
10+701.83 грн
В кошику  од. на суму  грн.
IXFH120N15P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052
IXFH120N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Case: TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 16mΩ
Drain current: 120A
Power dissipation: 600W
Drain-source voltage: 150V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
на замовлення 207 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+634.47 грн
5+504.64 грн
10+421.74 грн
В кошику  од. на суму  грн.
IXFH52N30P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5E98F50BC18BF&compId=IXF(V%2CH)52N30P(S).pdf?ci_sign=364d4b58b7cffdd5dffcd14a44a5a11a01598e3a
IXFH52N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 110nC
Reverse recovery time: 160ns
On-state resistance: 73mΩ
Gate-source voltage: ±20V
Drain current: 52A
Drain-source voltage: 300V
Power dissipation: 400W
на замовлення 282 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+486.26 грн
5+383.11 грн
30+316.31 грн
В кошику  од. на суму  грн.
CPC1906Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1900C7&compId=CPC1906.pdf?ci_sign=ecc876797bb2c9d84a9e02b4914db18b397562b5
CPC1906Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 10ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
MDNA360UB2200PTED MDNA360UB2200PTED.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: E2-Pack
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 135A
Pulsed collector current: 280A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
товару немає в наявності
В кошику  од. на суму  грн.
MDNA210UB2200PTED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: E2-Pack
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
товару немає в наявності
В кошику  од. на суму  грн.
MDNA280UB2200PTED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: E2-Pack
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
товару немає в наявності
В кошику  од. на суму  грн.
CLA60MT1200NHB pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEF950EA5DBD8BF&compId=CLA60MT1200NHB.pdf?ci_sign=931ed8de95f4a498e58b92338e50a36a33e544fe
CLA60MT1200NHB
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 325A
Kind of package: tube
Case: TO247-3
Mounting: THT
Type of thyristor: triac
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+571.20 грн
10+360.57 грн
В кошику  од. на суму  грн.
CLA80MT1200NHB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA7822040C5C200C4&compId=CLA80MT1200NHB.pdf?ci_sign=b7d475d8ebe5374c36b717c8b05ac079131171a7
CLA80MT1200NHB
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 440A
Kind of package: tube
Mounting: THT
Case: TO247-3
Type of thyristor: triac
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
на замовлення 313 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+671.74 грн
10+546.50 грн
30+472.45 грн
В кошику  од. на суму  грн.
CLA60MT1200NHR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFAF1199F33C0C4&compId=CLA60MT1200NHR.pdf?ci_sign=667c2802955af27425e185a40228badc5bc85a18
CLA60MT1200NHR
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 325A
Kind of package: tube
Case: ISO247™
Mounting: THT
Type of thyristor: triac
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+842.50 грн
3+689.76 грн
10+619.74 грн
30+596.40 грн
В кошику  од. на суму  грн.
IXFP26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFP26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+587.67 грн
10+485.33 грн
50+426.57 грн
100+400.01 грн
250+371.84 грн
В кошику  од. на суму  грн.
FDA217S pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b
FDA217S
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Type of integrated circuit: driver
Operating temperature: -40...85°C
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+221.89 грн
3+188.34 грн
5+177.07 грн
10+171.43 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FMD15-06KC5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F522E6E4505820&compId=FMD15-06KC5.pdf?ci_sign=2f4352c0a860f23fb93ad3877941b2c9bd4b7589
FMD15-06KC5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A
Type of transistor: N-MOSFET
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: diode/transistor
Features of semiconductor devices: super junction coolmos
Topology: boost chopper
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1190.07 грн
3+977.09 грн
В кошику  од. на суму  грн.
IXFH56N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBB8D50EDA38BF&compId=IXF_56N30X3.pdf?ci_sign=633f7ff7bbd4d5f73ecc58750c76abed9db4d947 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFH56N30X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 56nC
Reverse recovery time: 115ns
On-state resistance: 27mΩ
Gate-source voltage: ±20V
Drain current: 56A
Drain-source voltage: 300V
Power dissipation: 320W
на замовлення 236 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+612.80 грн
10+464.40 грн
В кошику  од. на суму  грн.
IXFH50N30Q3 pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5E17586FE98BF&compId=IXFH50N30Q3_IXFT50N30Q3.pdf?ci_sign=52d892f03a88a92038e3318344d24f837885d158
IXFH50N30Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 50A; 690W; TO247-3; 250ns
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 65nC
Reverse recovery time: 250ns
On-state resistance: 80mΩ
Gate-source voltage: ±20V
Drain current: 50A
Drain-source voltage: 300V
Power dissipation: 690W
на замовлення 14 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+800.02 грн
10+701.83 грн
В кошику  од. на суму  грн.
IXFN420N10T IXFN420N10T.pdf
IXFN420N10T
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 100V; 420A; SOT227B; screw; Idm: 1kA
Type of semiconductor module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 100V
Drain current: 420A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 2.3mΩ
Pulsed drain current: 1kA
Power dissipation: 1.07kW
Technology: GigaMOS™; HiPerFET™
Gate-source voltage: ±30V
Mechanical mounting: screw
Reverse recovery time: 140ns
Gate charge: 670nC
Kind of channel: enhancement
на замовлення 274 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2059.43 грн
5+1637.88 грн
10+1622.58 грн
В кошику  од. на суму  грн.
IXFT120N15P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052
IXFT120N15P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; PolarHT™; unipolar; 150V; 120A; 600W; TO268
Case: TO268
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 150nC
Reverse recovery time: 200ns
On-state resistance: 16mΩ
Drain current: 120A
Power dissipation: 600W
Drain-source voltage: 150V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; PolarHT™
на замовлення 30 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+760.15 грн
10+581.91 грн
30+457.16 грн
В кошику  од. на суму  грн.
IXFT120N25X3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BAAA7C92A91820&compId=IXFH(T%2CQ)120N25X3_HV.pdf?ci_sign=f0265349042830fefde5800576c2580ffda544fa
IXFT120N25X3HV
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 120A; 480W; TO268HV; 140ns
Mounting: SMD
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Type of transistor: N-MOSFET
Case: TO268HV
Polarisation: unipolar
Gate charge: 122nC
Reverse recovery time: 140ns
On-state resistance: 12mΩ
Drain current: 120A
Drain-source voltage: 250V
Power dissipation: 480W
Kind of package: tube
на замовлення 24 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+897.97 грн
В кошику  од. на суму  грн.
MMIX1F210N30P3 media?resourcetype=datasheets&itemid=670ef26e-24b2-4f5e-8ee0-56c3d653d777&filename=littelfuse_discrete_mosfets_smpd_packages_mmix1f210n30p3_datasheet.pdf
MMIX1F210N30P3
+1
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar3™; unipolar; 300V; 108A; Idm: 550A; 520W
Mounting: SMD
Polarisation: unipolar
Reverse recovery time: 250ns
Gate charge: 268nC
On-state resistance: 16mΩ
Gate-source voltage: ±20V
Drain current: 108A
Drain-source voltage: 300V
Power dissipation: 520W
Pulsed drain current: 550A
Kind of channel: enhancement
Technology: HiPerFET™; Polar3™
Case: SMPD
Type of transistor: N-MOSFET
на замовлення 20 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3501.73 грн
3+2871.72 грн
10+2581.97 грн
20+2578.75 грн
В кошику  од. на суму  грн.
IX4427NTR pVersion=0046&contRep=ZT&docId=005056AB82531EE98D863802577458BF&compId=IX4426-27-28.pdf?ci_sign=99fa057a30fafec2de1c6f12a1a5e55d8b525d9c
IX4427NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Type of integrated circuit: driver
Kind of output: non-inverting
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
5+101.41 грн
10+59.16 грн
25+51.99 грн
50+47.41 грн
100+43.46 грн
250+39.04 грн
500+38.23 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
IXTH24N50L IXTH24N50L.pdf
IXTH24N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 24A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 24A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 160nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXGH16N170 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5BAB99F1D44C151BF&compId=IXGH16N170-DTE.pdf?ci_sign=03a18b66e5d35198e9e236f78cf7b52f7cc4d616
IXGH16N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 16A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 16A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Turn-on time: 90ns
Turn-off time: 1.6µs
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
IXGH16N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF1B026578F820&compId=IXGH(t)16N170A_H1.pdf?ci_sign=82251fb9a53624c1a8393f1c64015dacf9520a38
IXGH16N170A
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 11A; 190W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 11A
Power dissipation: 190W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Turn-on time: 35ns
Turn-off time: 298ns
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
IXGH6N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAE62EB13C77820&compId=IXGh(T)6N170A.pdf?ci_sign=e3be7b7321a119c55baa6fb6dbef9aed2b2b65e8
IXGH6N170A
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 6A; 75W; TO247-3
Type of transistor: IGBT
Technology: NPT
Collector-emitter voltage: 1.7kV
Collector current: 6A
Power dissipation: 75W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 14A
Mounting: THT
Gate charge: 18.5nC
Kind of package: tube
Turn-on time: 91ns
Turn-off time: 271ns
Features of semiconductor devices: high voltage
товару немає в наявності
В кошику  од. на суму  грн.
IXTP10P15T IXT_10P15T.pdf
IXTP10P15T
Виробник: IXYS
Category: THT P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -150V; -10A; 83W; TO220AB
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Type of transistor: P-MOSFET
Technology: TrenchP™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -10A
Gate charge: 36nC
Reverse recovery time: 120ns
On-state resistance: 0.35Ω
Power dissipation: 83W
Gate-source voltage: ±15V
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+178.55 грн
10+133.61 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PLA150S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558
PLA150S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: SMT
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 145 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+248.76 грн
100+214.90 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
PLA150 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B49527A99160C7&compId=PLA150.pdf?ci_sign=5c7b2ceba8611d1013361ab1d5aeffd0d8ee6558
PLA150
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.250VAC
Kind of output: MOSFET
Manufacturer series: OptoMOS
Mounting: THT
Operating temperature: -40...85°C
Turn-on time: 2.5ms
Turn-off time: 0.5ms
Body dimensions: 8.38x6.35x3.3mm
Max. operating current: 250mA
Control current max.: 50mA
On-state resistance: 7Ω
Switched voltage: max. 250V AC; max. 250V DC
Insulation voltage: 3.75kV
Relay variant: 1-phase; current source
Case: DIP6
Type of relay: solid state
Contacts configuration: SPST-NO
на замовлення 95 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+323.30 грн
10+240.65 грн
50+219.72 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA3N120 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F93BE39C93820&compId=IXFA3N120.pdf?ci_sign=8c812837976fee0aac5a23608e183a8630e51a8a
IXFA3N120
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 3A; 200W; TO263
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: tube
Polarisation: unipolar
Gate charge: 39nC
Drain current: 3A
Power dissipation: 200W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Case: TO263
на замовлення 321 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+676.94 грн
3+575.47 грн
5+536.84 грн
10+474.86 грн
50+440.25 грн
В кошику  од. на суму  грн.
IXFK120N30T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDD9A0D060F820&compId=IXFK(X)120N30T.pdf?ci_sign=f7ad151cb9d281d49ca96d548a02ff3a244c55e0
IXFK120N30T
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 120A; 960W; TO264
Kind of package: tube
Polarisation: unipolar
Gate charge: 265nC
On-state resistance: 24mΩ
Drain current: 120A
Drain-source voltage: 300V
Power dissipation: 960W
Case: TO264
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Type of transistor: N-MOSFET
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+433.38 грн
В кошику  од. на суму  грн.
IXFP270N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f
IXFP270N06T3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO220AB; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
товару немає в наявності
В кошику  од. на суму  грн.
IXFA270N06T3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B2A4328E9678BE27&compId=IXxx270N06T3-DTE.pdf?ci_sign=19ddd571869c0b9ce2fbd4148878297eb900047f
IXFA270N06T3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 480W; TO263; 47ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 480W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 200nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 47ns
Technology: HiPerFET™; TrenchT3™
товару немає в наявності
В кошику  од. на суму  грн.
IXFP50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
IXFP50N20X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
на замовлення 10 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+404.78 грн
3+338.84 грн
10+299.41 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA50N20X3 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixf_50n20x3_datasheet.pdf?assetguid=4654016f-96e1-44c8-b50b-388f1e88194d
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 200V; 50A; Idm: 70A; 240W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 70A
Power dissipation: 240W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 70ns
Technology: HiPerFET™; X3-Class
товару немає в наявності
В кошику  од. на суму  грн.
IXBT16N170A pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD04849F0DFB820&compId=IXBH(T)16N170A.pdf?ci_sign=05b45852ed6e7230aca07a9203cce83faedf4e33
IXBT16N170A
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268
Technology: BiMOSFET™
Mounting: SMD
Case: TO268
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1081.72 грн
3+882.12 грн
В кошику  од. на суму  грн.
IXBT16N170AHV pVersion=0046&contRep=ZT&docId=005056AB82531ED99AD01F9B98FE5820&compId=IXBA16N170AHV.pdf?ci_sign=95336b0cb3303bf228c8eebd741f5683b4c5f35c
IXBT16N170AHV
Виробник: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 10A; 150W; TO268HV
Technology: BiMOSFET™
Mounting: SMD
Case: TO268HV
Collector current: 10A
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Power dissipation: 150W
Collector-emitter voltage: 1.7kV
Kind of package: tube
Features of semiconductor devices: high voltage
Type of transistor: IGBT
Turn-on time: 43ns
Gate charge: 65nC
Turn-off time: 370ns
на замовлення 18 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1067.85 грн
3+882.12 грн
10+791.98 грн
В кошику  од. на суму  грн.
IXGP30N120B3 IXGA(H,P)30N120B3.pdf
IXGP30N120B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 30A; 300W; TO220-3
Type of transistor: IGBT
Case: TO220-3
Technology: GenX3™; PT
Kind of package: tube
Mounting: THT
Turn-on time: 56ns
Gate charge: 87nC
Turn-off time: 471ns
Gate-emitter voltage: ±20V
Collector current: 30A
Pulsed collector current: 150A
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+780.09 грн
В кошику  од. на суму  грн.
LCB110 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B4942FD86260C7&compId=LCB110.pdf?ci_sign=03dbca411aa4d9626aca9faf26083c3ec20f2f0c
LCB110
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 120mA; max.350VAC
Type of relay: solid state
Contacts configuration: SPST-NC
Control current max.: 50mA
Max. operating current: 120mA
Switched voltage: max. 350V AC; max. 350V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 35Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 3.75kV
Turn-on time: 3ms
Turn-off time: 3ms
Kind of output: MOSFET
Operating temperature: -40...85°C
на замовлення 450 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+184.62 грн
50+156.14 грн
250+140.04 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 27 54 81 108 135 162 189 216 243 256 257 258 259 260 261 262 263 264 265 266 270 273  [ Наступна Сторінка >> ]