Продукція > IXYS > Всі товари виробника IXYS (16522) > Сторінка 261 з 276

Обрати Сторінку:   [  << Попередня Сторінка ]  1 27 54 81 108 135 162 189 216 243 256 257 258 259 260 261 262 263 264 265 266 270 276  [ Наступна Сторінка >> ]
Фото Назва Виробник Інформація Доступність
Ціна
DSP25-16AT-TUB DSP25-16AT-TUB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC498C99CFDA0C4&compId=DSP25-16AT.pdf?ci_sign=0b5fa43321000384158f4db8f203a913258a48d6 Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: double series
Case: D3PAK
Max. forward voltage: 1.16V
Max. forward impulse current: 0.3kA
Power dissipation: 160W
товару немає в наявності
В кошику  од. на суму  грн.
VHF25-12IO7 VHF25-12IO7 IXYS VHF25-ser.pdf Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
1+1182.46 грн
3+968.82 грн
10+875.53 грн
В кошику  од. на суму  грн.
IXDD604SI IXDD604SI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 597 шт:
термін постачання 21-30 дні (днів)
3+204.38 грн
10+144.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDI604PI IXDI604PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 974 шт:
термін постачання 21-30 дні (днів)
4+109.92 грн
10+81.33 грн
50+75.75 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTN22N100L IXTN22N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA743238E52B820&compId=IXTN22N100L.pdf?ci_sign=bd0f90a435af556a9c7a240091db1d3ed3d343fd Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Pulsed drain current: 50A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.6Ω
Gate charge: 0.27µC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 1µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTX22N100L IXTX22N100L IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD1D9980B2F820&compId=IXTK(X)22N100L.pdf?ci_sign=0615493c1b1063422d61a154cca03734f6f66ba8 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
товару немає в наявності
В кошику  од. на суму  грн.
IXBH24N170 IXBH24N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF2EB66970D820&compId=IXBH(t)24N170.pdf?ci_sign=2bee8c9822cc9e5187f0a7830b316f81bec56b83 Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Power dissipation: 250W
Collector current: 24A
Pulsed collector current: 230A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+1548.27 грн
В кошику  од. на суму  грн.
IXDD604PI IXDD604PI IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 146 шт:
термін постачання 21-30 дні (днів)
4+124.51 грн
10+84.52 грн
50+76.55 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDD604SITR IXYS littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH30N50P IXFH30N50P IXYS IXFH30N50P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
1+615.70 грн
3+523.88 грн
5+499.96 грн
10+466.47 грн
В кошику  од. на суму  грн.
IXFH30N50Q3 IXFH30N50Q3 IXYS IXFH30N50Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ30N50L IXTQ30N50L IXYS IXTH(Q,T)30N50L.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N50L IXTT30N50L IXYS IXTH(Q,T)30N50L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N50P IXTT30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTH30N50L2 IXTH30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXFT30N50P IXFT30N50P IXYS IXFH30N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFT30N50Q3 IXFT30N50Q3 IXYS IXFH30N50Q3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTH30N50P IXTH30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ30N50L2 IXTQ30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ30N50P IXTQ30N50P IXYS IXTH(Q,T,V)30N50P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N50L2 IXTT30N50L2 IXYS IXTH(Q,T)30N50L2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTY14N60X2 IXTY14N60X2 IXYS IXTY14N60X2_DS_1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 16.7nC
товару немає в наявності
В кошику  од. на суму  грн.
MDD142-16N1 MDD142-16N1 IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E076A735FF9E28&compId=MDD142-16N1-DTE.pdf?ci_sign=b81a928fa52fbbec2ea352c4ce2044d25f13adb9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793 Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4kA
Electrical mounting: screw
Max. load current: 300A
Mechanical mounting: screw
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
1+3821.31 грн
6+3317.12 грн
В кошику  од. на суму  грн.
DMA150YC1600NA DMA150YC1600NA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA5AF2EE937A7E0CE&compId=DMA150YC1600NA.pdf?ci_sign=eb9d0cd237fe04937e9b7f93c2a2703efc0afafc Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Version: module
Mechanical mounting: screw
Electrical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 700A
Max. off-state voltage: 1.6kV
Load current: 150A
Semiconductor structure: common cathode
товару немає в наявності
В кошику  од. на суму  грн.
DMA150YA1600NA DMA150YA1600NA IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA5AF2D437F59C0CE&compId=DMA150YA1600NA.pdf?ci_sign=981018eb9fe457baa6e6553f151d3e4298168dcd Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Version: module
Mechanical mounting: screw
Electrical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 0.8kA
Max. off-state voltage: 1.6kV
Load current: 150A
Semiconductor structure: common anode
товару немає в наявності
В кошику  од. на суму  грн.
CPC1966Y CPC1966Y IXYS CPC1966.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Max. operating current: 3A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Control current max.: 50mA
Insulation voltage: 3.75kV
Case: SIP4
Mounting: THT
Switching method: zero voltage switching
на замовлення 125 шт:
термін постачання 21-30 дні (днів)
2+389.86 грн
10+314.17 грн
25+281.48 грн
100+266.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTY1N120P IXTY1N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of package: tube
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
3+176.90 грн
5+147.52 грн
25+129.97 грн
70+124.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP2R4N120P IXTP2R4N120P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE993964EAD3952F8BF&compId=IXT_2R4N120P.pdf?ci_sign=eb8ee9bf4f44f4620c1e19588ea25a870e1c1b6d Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
на замовлення 307 шт:
термін постачання 21-30 дні (днів)
1+436.23 грн
10+378.76 грн
50+312.57 грн
100+276.69 грн
250+269.52 грн
В кошику  од. на суму  грн.
VGO36-16IO7 VGO36-16IO7 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6236239A8C0C4&compId=VGO36-16io7.pdf?ci_sign=f9fb0bce59b8ae8122be8b955a3f251a5e31da08 Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 36A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 36A
Max. forward impulse current: 280A
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Gate current: 65mA
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
1+1411.74 грн
3+1200.06 грн
5+1140.26 грн
В кошику  од. на суму  грн.
IXFT14N80P IXFT14N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ14N60P IXTQ14N60P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTA180N10T IXTA180N10T IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D545772189D820&compId=IXTA(P)180N10T.pdf?ci_sign=95831666b0a60635c5fe5a67c516de81d010b765 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
2+393.29 грн
10+310.18 грн
25+256.76 грн
50+241.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1984Y CPC1984Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493853439C0C7&compId=CPC1984Y.pdf?ci_sign=c4456eb49faad16e3d4dbbc32458cf0e8e594af7 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 10ms
Max. operating current: 1A
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.66Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 4kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ69N30P IXTQ69N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D131A4635E27&compId=IXTQ69N30P-DTE.pdf?ci_sign=30ac47e4c9ca5a13d0405042e859205ebf2f7209 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: Polar™
Kind of package: tube
Case: TO3P
Polarisation: unipolar
Gate charge: 156nC
Reverse recovery time: 330ns
On-state resistance: 49mΩ
Gate-source voltage: ±20V
Drain current: 69A
Drain-source voltage: 300V
Power dissipation: 500W
товару немає в наявності
В кошику  од. на суму  грн.
MD18200S-DKM2MM IXYS littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf?assetguid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8 Category: Diode modules
Description: Module: diode; double,common cathode; 1.8kV; If: 200A; package S
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.5V
Load current: 200A
Max. load current: 310A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 6.5kA
Case: package S
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
товару немає в наявності
В кошику  од. на суму  грн.
PLA191 PLA191 IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
PLA191STR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IXTT170N10P IXTT170N10P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9185A4CE98DE27&compId=IXTK170N10P-DTE.pdf?ci_sign=9136904f8419278af3f28381c2ff94e364518191 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Kind of channel: enhancement
Case: TO268
Type of transistor: N-MOSFET
Mounting: SMD
Technology: Polar™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Gate charge: 198nC
Reverse recovery time: 120ns
On-state resistance: 9mΩ
Power dissipation: 715W
Gate-source voltage: ±20V
на замовлення 147 шт:
термін постачання 21-30 дні (днів)
1+865.59 грн
3+736.78 грн
5+688.94 грн
10+614.78 грн
30+559.76 грн
В кошику  од. на суму  грн.
IXFK140N30P IXFK140N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5FBBF2FB0F8BF&compId=IXFK140N30P_IXFX140N30P.pdf?ci_sign=6d081054787efa2c56b843d54a6d6c3f464460d2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 185nC
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Drain-source voltage: 300V
Power dissipation: 1.04kW
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
на замовлення 272 шт:
термін постачання 21-30 дні (днів)
1+1391.13 грн
5+1137.07 грн
10+1058.13 грн
В кошику  од. на суму  грн.
IXFR18N90P IXFR18N90P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B09820&compId=IXFR18N90P.pdf?ci_sign=630c9b0ce412688e2b82a725d5ca14f372c1c7c0 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 10.5A
Pulsed drain current: 36A
Power dissipation: 200W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
1+948.03 грн
3+791.00 грн
10+695.32 грн
В кошику  од. на суму  грн.
IXFH120N15P IXFH120N15P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052 Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Case: TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 16mΩ
Drain current: 120A
Power dissipation: 600W
Drain-source voltage: 150V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
на замовлення 207 шт:
термін постачання 21-30 дні (днів)
1+628.58 грн
5+499.96 грн
10+417.83 грн
В кошику  од. на суму  грн.
IXFH52N30P IXFH52N30P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5E98F50BC18BF&compId=IXF(V%2CH)52N30P(S).pdf?ci_sign=364d4b58b7cffdd5dffcd14a44a5a11a01598e3a Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 110nC
Reverse recovery time: 160ns
On-state resistance: 73mΩ
Gate-source voltage: ±20V
Drain current: 52A
Drain-source voltage: 300V
Power dissipation: 400W
на замовлення 282 шт:
термін постачання 21-30 дні (днів)
1+481.74 грн
5+379.55 грн
30+313.37 грн
В кошику  од. на суму  грн.
CPC1906Y CPC1906Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1900C7&compId=CPC1906.pdf?ci_sign=ecc876797bb2c9d84a9e02b4914db18b397562b5 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 10ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
MDNA360UB2200PTED IXYS MDNA360UB2200PTED.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: E2-Pack
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 135A
Pulsed collector current: 280A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
товару немає в наявності
В кошику  од. на суму  грн.
MDNA210UB2200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: E2-Pack
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
товару немає в наявності
В кошику  од. на суму  грн.
MDNA280UB2200PTED IXYS Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: E2-Pack
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
товару немає в наявності
В кошику  од. на суму  грн.
LOC110 LOC110 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6 Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Insulation voltage: 3.75kV
Kind of output: photodiode
Case: DIP8
на замовлення 363 шт:
термін постачання 21-30 дні (днів)
3+173.46 грн
9+114.82 грн
23+108.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PLB150S PLB150S IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7960C7&compId=PLB150.pdf?ci_sign=e6a835b33cf7bbb6db157533fe16deb901f9ab13 Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Manufacturer series: OptoMOS
Case: DIP6
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-on time: 1ms
Turn-off time: 2.5ms
On-state resistance: 7Ω
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
1+520.38 грн
4+275.10 грн
10+259.95 грн
В кошику  од. на суму  грн.
CLA60MT1200NHB CLA60MT1200NHB IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEF950EA5DBD8BF&compId=CLA60MT1200NHB.pdf?ci_sign=931ed8de95f4a498e58b92338e50a36a33e544fe Category: Triacs
Description: Triac; 1.2kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 325A
Kind of package: tube
Case: TO247-3
Mounting: THT
Type of thyristor: triac
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
1+565.90 грн
10+357.23 грн
В кошику  од. на суму  грн.
CLA80MT1200NHB CLA80MT1200NHB IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA7822040C5C200C4&compId=CLA80MT1200NHB.pdf?ci_sign=b7d475d8ebe5374c36b717c8b05ac079131171a7 Category: Triacs
Description: Triac; 1.2kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 440A
Kind of package: tube
Mounting: THT
Case: TO247-3
Type of thyristor: triac
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
на замовлення 313 шт:
термін постачання 21-30 дні (днів)
1+665.51 грн
10+541.42 грн
30+468.06 грн
В кошику  од. на суму  грн.
CLA60MT1200NHR CLA60MT1200NHR IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFAF1199F33C0C4&compId=CLA60MT1200NHR.pdf?ci_sign=667c2802955af27425e185a40228badc5bc85a18 Category: Triacs
Description: Triac; 1.2kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 325A
Kind of package: tube
Case: ISO247™
Mounting: THT
Type of thyristor: triac
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
1+834.68 грн
3+683.36 грн
10+613.99 грн
30+590.86 грн
В кошику  од. на суму  грн.
IXGH24N170 IXGH24N170 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3D3296E6F820&compId=IXGH(T)24N170.pdf?ci_sign=bcf829c7a280c895f4c01ef3c947f0ab37ed7901 Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 106nC
Turn-on time: 105ns
Turn-off time: 560ns
Power dissipation: 250W
Collector current: 24A
Pulsed collector current: 150A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
1+1088.00 грн
3+955.27 грн
В кошику  од. на суму  грн.
IXFP26N50P3 IXFP26N50P3 IXYS pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
1+582.21 грн
10+480.82 грн
50+422.61 грн
100+396.30 грн
250+368.39 грн
В кошику  од. на суму  грн.
CPC1705Y CPC1705Y IXYS pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147DD40C7&compId=CPC1705y.pdf?ci_sign=9a0e8e0330114c6075c230c6290a49adb090967b Category: DC Solid State Relays
Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Max. operating current: 3.25A
Switched voltage: max. 60V DC
Mounting: THT
Case: SOP4
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 21.08x10.16x3.3mm
Turn-on time: 2ms
Turn-off time: 12ms
Contacts configuration: SPST-NC
On-state resistance: 90mΩ
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
FDA217S FDA217S IXYS pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Type of integrated circuit: driver
Operating temperature: -40...85°C
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
2+219.83 грн
3+186.59 грн
5+175.42 грн
10+169.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FMD15-06KC5 FMD15-06KC5 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F522E6E4505820&compId=FMD15-06KC5.pdf?ci_sign=2f4352c0a860f23fb93ad3877941b2c9bd4b7589 Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A
Type of transistor: N-MOSFET
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: diode/transistor
Features of semiconductor devices: super junction coolmos
Topology: boost chopper
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
1+1179.02 грн
3+968.02 грн
В кошику  од. на суму  грн.
IXGP48N60A3 IXGP48N60A3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE53B33B1DDB820&compId=IXGA(P%2CH)48N60A3.pdf?ci_sign=3de66c7eadd74b16b8875cd3a050200178617cff Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTH1N200P3HV IXTH1N200P3HV IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDCB63FB405820&compId=IXTA(H)1N200P3HV.pdf?ci_sign=deac538022c3e7b6cce7ceee522f5c545d6ce7d6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247HV
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
товару немає в наявності
В кошику  од. на суму  грн.
LOC112P LOC112P IXYS pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; 3.75kV; Flatpack 8pin
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Kind of output: photodiode
Case: Flatpack 8pin
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+429.36 грн
В кошику  од. на суму  грн.
IXFH56N30X3 IXFH56N30X3 IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBB8D50EDA38BF&compId=IXF_56N30X3.pdf?ci_sign=633f7ff7bbd4d5f73ecc58750c76abed9db4d947 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 56nC
Reverse recovery time: 115ns
On-state resistance: 27mΩ
Gate-source voltage: ±20V
Drain current: 56A
Drain-source voltage: 300V
Power dissipation: 320W
на замовлення 236 шт:
термін постачання 21-30 дні (днів)
1+607.12 грн
10+460.09 грн
В кошику  од. на суму  грн.
DSP25-16AT-TUB pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BEC498C99CFDA0C4&compId=DSP25-16AT.pdf?ci_sign=0b5fa43321000384158f4db8f203a913258a48d6
DSP25-16AT-TUB
Виробник: IXYS
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1.6kV; 25A; D3PAK; Ufmax: 1.16V; Ifsm: 300A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1.6kV
Load current: 25A
Semiconductor structure: double series
Case: D3PAK
Max. forward voltage: 1.16V
Max. forward impulse current: 0.3kA
Power dissipation: 160W
товару немає в наявності
В кошику  од. на суму  грн.
VHF25-12IO7 VHF25-ser.pdf
VHF25-12IO7
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.2kV; If: 32A; THT
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.2kV
Load current: 32A
Max. forward impulse current: 180A
Gate current: 25/50mA
Electrical mounting: THT
Mechanical mounting: screw
Version: module
Case: ECO-PAC 1
Leads: wire Ø 0.75mm
Features of semiconductor devices: freewheelling diode
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1182.46 грн
3+968.82 грн
10+875.53 грн
В кошику  од. на суму  грн.
IXDD604SI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDD604SI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 597 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+204.38 грн
10+144.33 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXDI604PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDI604PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 974 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+109.92 грн
10+81.33 грн
50+75.75 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXTN22N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED99FA743238E52B820&compId=IXTN22N100L.pdf?ci_sign=bd0f90a435af556a9c7a240091db1d3ed3d343fd
IXTN22N100L
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 22A; SOT227B; screw; Idm: 50A; 700W
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Pulsed drain current: 50A
Power dissipation: 700W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.6Ω
Gate charge: 0.27µC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 1µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTX22N100L pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CD1D9980B2F820&compId=IXTK(X)22N100L.pdf?ci_sign=0615493c1b1063422d61a154cca03734f6f66ba8
IXTX22N100L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 22A; 700W; PLUS247™; 1us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 22A
Power dissipation: 700W
Case: PLUS247™
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 0.27µC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 1µs
товару немає в наявності
В кошику  од. на суму  грн.
IXBH24N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF2EB66970D820&compId=IXBH(t)24N170.pdf?ci_sign=2bee8c9822cc9e5187f0a7830b316f81bec56b83
IXBH24N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; BiMOSFET™; 1.7kV; 24A; 250W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 0.14µC
Turn-on time: 190ns
Turn-off time: 1285ns
Power dissipation: 250W
Collector current: 24A
Pulsed collector current: 230A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: BiMOSFET™
Features of semiconductor devices: high voltage
Type of transistor: IGBT
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1548.27 грн
В кошику  од. на суму  грн.
IXDD604PI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FF23FE769DD55EA&compId=IXDD604PI.pdf?ci_sign=ec27755554a44cc83c0b7faa400454990cec8327
IXDD604PI
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; DIP8; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: DIP8
Output current: -4...4A
Number of channels: 2
Supply voltage: 4.5...35V
Mounting: THT
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: non-inverting
Turn-off time: 79ns
Turn-on time: 81ns
на замовлення 146 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
4+124.51 грн
10+84.52 грн
50+76.55 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
IXDD604SITR littelfuse-integrated-circuits-ixd-604si-sia-datasheet?assetguid=9f38a290-f482-4588-95a1-b6b544380200
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,gate driver; SO8-EP; -4÷4A; Ch: 2; 4.5÷35V
Type of integrated circuit: driver
Kind of integrated circuit: gate driver; low-side
Case: SO8-EP
Output current: -4...4A
Number of channels: 2
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Supply voltage: 4.5...35V
Kind of output: non-inverting
Turn-on time: 81ns
Turn-off time: 79ns
товару немає в наявності
В кошику  од. на суму  грн.
IXFH30N50P IXFH30N50P.pdf
IXFH30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 500V; 30A; 460W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Gate-source voltage: ±30V
Technology: HiPerFET™; PolarHV™
на замовлення 23 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+615.70 грн
3+523.88 грн
5+499.96 грн
10+466.47 грн
В кошику  од. на суму  грн.
IXFH30N50Q3 IXFH30N50Q3.pdf
IXFH30N50Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO247-3; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Gate-source voltage: ±20V
Technology: HiPerFET™
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ30N50L IXTH(Q,T)30N50L.pdf
IXTQ30N50L
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N50L IXTH(Q,T)30N50L.pdf
IXTT30N50L
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTT30N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTH30N50L2 IXTH(Q,T)30N50L2.pdf
IXTH30N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO247-3; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO247-3
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXFT30N50P IXFH30N50P.pdf
IXFT30N50P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXFT30N50Q3 IXFH30N50Q3.pdf
IXFT30N50Q3
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 690W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 690W
Case: TO268
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTH30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTH30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO247-3; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO247-3
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ30N50L2 IXTH(Q,T)30N50L2.pdf
IXTQ30N50L2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO3P
On-state resistance: 0.215Ω
Mounting: THT
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ30N50P IXTH(Q,T,V)30N50P_S.pdf
IXTQ30N50P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 460W; TO3P; 400ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 460W
Case: TO3P
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 400ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTT30N50L2 IXTH(Q,T)30N50L2.pdf
IXTT30N50L2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 30A; 400W; TO268; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 30A
Power dissipation: 400W
Case: TO268
On-state resistance: 0.215Ω
Mounting: SMD
Gate charge: 240nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: linear power mosfet
Reverse recovery time: 0.5µs
товару немає в наявності
В кошику  од. на суму  грн.
IXTY14N60X2 IXTY14N60X2_DS_1.pdf
IXTY14N60X2
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 18A; 180W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 180W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 18A
Gate charge: 16.7nC
товару немає в наявності
В кошику  од. на суму  грн.
MDD142-16N1 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6B7E076A735FF9E28&compId=MDD142-16N1-DTE.pdf?ci_sign=b81a928fa52fbbec2ea352c4ce2044d25f13adb9 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFBEB87B287EDE20DC&compId=PCN241015_Y4-M6%20screw.pdf?ci_sign=38ad13cc2fd32f04493442be66d282dffeb86793
MDD142-16N1
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double series; 1.6kV; If: 165A; Y4-M6; Ufmax: 1.05V
Type of semiconductor module: diode
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 165A
Case: Y4-M6
Max. forward voltage: 1.05V
Max. forward impulse current: 4kA
Electrical mounting: screw
Max. load current: 300A
Mechanical mounting: screw
на замовлення 6 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3821.31 грн
6+3317.12 грн
В кошику  од. на суму  грн.
DMA150YC1600NA pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA5AF2EE937A7E0CE&compId=DMA150YC1600NA.pdf?ci_sign=eb9d0cd237fe04937e9b7f93c2a2703efc0afafc
DMA150YC1600NA
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Version: module
Mechanical mounting: screw
Electrical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 700A
Max. off-state voltage: 1.6kV
Load current: 150A
Semiconductor structure: common cathode
товару немає в наявності
В кошику  од. на суму  грн.
DMA150YA1600NA pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA5AF2D437F59C0CE&compId=DMA150YA1600NA.pdf?ci_sign=981018eb9fe457baa6e6553f151d3e4298168dcd
DMA150YA1600NA
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase half bridge; Urmax: 1.6kV; If: 150A
Case: SOT227B
Version: module
Mechanical mounting: screw
Electrical mounting: screw
Type of bridge rectifier: three-phase half bridge
Max. forward voltage: 1.16V
Max. forward impulse current: 0.8kA
Max. off-state voltage: 1.6kV
Load current: 150A
Semiconductor structure: common anode
товару немає в наявності
В кошику  од. на суму  грн.
CPC1966Y CPC1966.pdf
CPC1966Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 3000mA; max.240VAC; 1-phase
Type of relay: solid state
Max. operating current: 3A
Switched voltage: max. 240V AC
Relay variant: 1-phase
Body dimensions: 21.08x10.16x3.3mm
Operating temperature: -40...85°C
Control current max.: 50mA
Insulation voltage: 3.75kV
Case: SIP4
Mounting: THT
Switching method: zero voltage switching
на замовлення 125 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+389.86 грн
10+314.17 грн
25+281.48 грн
100+266.33 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTY1N120P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A28465095B933820&compId=IXTY(A%2CP)1N120P.pdf?ci_sign=8005f7217719a368d68d2e956d74381e1fc08bc0
IXTY1N120P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO252; 900ns
Kind of package: tube
Case: TO252
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Features of semiconductor devices: standard power mosfet
Polarisation: unipolar
Reverse recovery time: 900ns
On-state resistance: 20Ω
Drain current: 1A
Power dissipation: 63W
Drain-source voltage: 1.2kV
на замовлення 77 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+176.90 грн
5+147.52 грн
25+129.97 грн
70+124.39 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
IXTP2R4N120P pVersion=0046&contRep=ZT&docId=005056AB82531EE993964EAD3952F8BF&compId=IXT_2R4N120P.pdf?ci_sign=eb8ee9bf4f44f4620c1e19588ea25a870e1c1b6d
IXTP2R4N120P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 2.4A; Idm: 6A; 125W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO220AB
Technology: Polar™
Mounting: THT
Features of semiconductor devices: standard power mosfet
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 2.4A
Gate charge: 37nC
Reverse recovery time: 920ns
On-state resistance: 7.5Ω
Pulsed drain current: 6A
Gate-source voltage: ±30V
Power dissipation: 125W
на замовлення 307 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+436.23 грн
10+378.76 грн
50+312.57 грн
100+276.69 грн
250+269.52 грн
В кошику  од. на суму  грн.
VGO36-16IO7 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA81F6236239A8C0C4&compId=VGO36-16io7.pdf?ci_sign=f9fb0bce59b8ae8122be8b955a3f251a5e31da08
VGO36-16IO7
Виробник: IXYS
Category: Single phase controlled bridge rectif.
Description: Bridge rectifier: half-controlled; Urmax: 1.6kV; If: 36A; Igt: 65mA
Type of bridge rectifier: half-controlled
Max. off-state voltage: 1.6kV
Load current: 36A
Max. forward impulse current: 280A
Electrical mounting: THT
Version: module
Leads: wire Ø 0.75mm
Case: ECO-PAC 1
Mechanical mounting: screw
Gate current: 65mA
на замовлення 31 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1411.74 грн
3+1200.06 грн
5+1140.26 грн
В кошику  од. на суму  грн.
IXFT14N80P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF8DAC82F1820&compId=IXFH(Q%2CT)14N80P_S.pdf?ci_sign=54c4a7d42ec81caabad0953bf61c033b9e6baf24
IXFT14N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 14A; 400W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 14A
Power dissipation: 400W
Case: TO268
On-state resistance: 720mΩ
Mounting: SMD
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ14N60P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3CDF3FD8C429820&compId=IXTA(P%2CQ)14N60P.pdf?ci_sign=6554e46a5935d8c3dafc1333256ae865a9571c1d
IXTQ14N60P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; 300W; TO3P; 500ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 300W
Case: TO3P
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 0.5µs
Features of semiconductor devices: standard power mosfet
товару немає в наявності
В кошику  од. на суму  грн.
IXTA180N10T pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3D545772189D820&compId=IXTA(P)180N10T.pdf?ci_sign=95831666b0a60635c5fe5a67c516de81d010b765
IXTA180N10T
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
на замовлення 300 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+393.29 грн
10+310.18 грн
25+256.76 грн
50+241.61 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
CPC1984Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B493853439C0C7&compId=CPC1984Y.pdf?ci_sign=c4456eb49faad16e3d4dbbc32458cf0e8e594af7
CPC1984Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 1000mA; max.600VAC
Manufacturer series: OptoMOS
Operating temperature: -40...85°C
Turn-on time: 10ms
Max. operating current: 1A
Turn-off time: 2ms
Body dimensions: 21.08x10.16x3.3mm
Control current max.: 50mA
On-state resistance: 0.66Ω
Switched voltage: max. 600V AC; max. 600V DC
Relay variant: 1-phase; current source
Insulation voltage: 4kV
Case: SIP4
Kind of output: MOSFET
Mounting: THT
Type of relay: solid state
Contacts configuration: SPST-NO
товару немає в наявності
В кошику  од. на суму  грн.
IXTQ69N30P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF90D131A4635E27&compId=IXTQ69N30P-DTE.pdf?ci_sign=30ac47e4c9ca5a13d0405042e859205ebf2f7209
IXTQ69N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 69A; 500W; TO3P; 330ns
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: Polar™
Kind of package: tube
Case: TO3P
Polarisation: unipolar
Gate charge: 156nC
Reverse recovery time: 330ns
On-state resistance: 49mΩ
Gate-source voltage: ±20V
Drain current: 69A
Drain-source voltage: 300V
Power dissipation: 500W
товару немає в наявності
В кошику  од. на суму  грн.
MD18200S-DKM2MM littelfuse_power_semiconductor_rectifier_module_circuit_package_s_datasheet.pdf?assetguid=9a102cdc-ebef-4b54-afd4-1c80071a8ed8
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double,common cathode; 1.8kV; If: 200A; package S
Electrical mounting: screw
Mechanical mounting: screw
Max. forward voltage: 1.5V
Load current: 200A
Max. load current: 310A
Max. off-state voltage: 1.8kV
Max. forward impulse current: 6.5kA
Case: package S
Semiconductor structure: common cathode; double
Type of semiconductor module: diode
товару немає в наявності
В кошику  од. на суму  грн.
PLA191 pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b
PLA191
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
PLA191STR pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7280C7&compId=PLA191.pdf?ci_sign=3679a127269571c5666f8573ba55d2cee627ee6b
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 250mA; max.400VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 400V AC; max. 400V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 8Ω
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Insulation voltage: 5kV
Turn-on time: 3ms
Turn-off time: 1ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
IXTT170N10P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6AF9185A4CE98DE27&compId=IXTK170N10P-DTE.pdf?ci_sign=9136904f8419278af3f28381c2ff94e364518191
IXTT170N10P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 100V; 170A; 715W; TO268
Kind of channel: enhancement
Case: TO268
Type of transistor: N-MOSFET
Mounting: SMD
Technology: Polar™
Kind of package: tube
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 170A
Gate charge: 198nC
Reverse recovery time: 120ns
On-state resistance: 9mΩ
Power dissipation: 715W
Gate-source voltage: ±20V
на замовлення 147 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+865.59 грн
3+736.78 грн
5+688.94 грн
10+614.78 грн
30+559.76 грн
В кошику  од. на суму  грн.
IXFK140N30P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5FBBF2FB0F8BF&compId=IXFK140N30P_IXFX140N30P.pdf?ci_sign=6d081054787efa2c56b843d54a6d6c3f464460d2
IXFK140N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 140A; 1040W; TO264
Mounting: THT
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Polarisation: unipolar
Reverse recovery time: 200ns
Gate charge: 185nC
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Drain-source voltage: 300V
Power dissipation: 1.04kW
Drain current: 140A
Case: TO264
Kind of package: tube
Kind of channel: enhancement
на замовлення 272 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1391.13 грн
5+1137.07 грн
10+1058.13 грн
В кошику  од. на суму  грн.
IXFR18N90P pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9557C6B09820&compId=IXFR18N90P.pdf?ci_sign=630c9b0ce412688e2b82a725d5ca14f372c1c7c0
IXFR18N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 10.5A; Idm: 36A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 10.5A
Pulsed drain current: 36A
Power dissipation: 200W
Case: ISOPLUS247™
Gate-source voltage: ±30V
On-state resistance: 0.66Ω
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 300ns
на замовлення 13 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+948.03 грн
3+791.00 грн
10+695.32 грн
В кошику  од. на суму  грн.
IXFH120N15P pVersion=0046&contRep=ZT&docId=005056AB82531EE995A8C3083ED8B8BF&compId=IXF_120N15P.pdf?ci_sign=156bfe286b85bf27cbdb6b6e3a775cb4e363d052
IXFH120N15P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 150V; 120A; 600W; TO247-3
Case: TO247-3
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 150nC
On-state resistance: 16mΩ
Drain current: 120A
Power dissipation: 600W
Drain-source voltage: 150V
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
на замовлення 207 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+628.58 грн
5+499.96 грн
10+417.83 грн
В кошику  од. на суму  грн.
IXFH52N30P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CA5E98F50BC18BF&compId=IXF(V%2CH)52N30P(S).pdf?ci_sign=364d4b58b7cffdd5dffcd14a44a5a11a01598e3a
IXFH52N30P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 300V; 52A; 400W; TO247-3
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 110nC
Reverse recovery time: 160ns
On-state resistance: 73mΩ
Gate-source voltage: ±20V
Drain current: 52A
Drain-source voltage: 300V
Power dissipation: 400W
на замовлення 282 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+481.74 грн
5+379.55 грн
30+313.37 грн
В кошику  од. на суму  грн.
CPC1906Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492C38F1900C7&compId=CPC1906.pdf?ci_sign=ecc876797bb2c9d84a9e02b4914db18b397562b5
CPC1906Y
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 2000mA; max.60VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 2A
Switched voltage: max. 60V AC; max. 60V DC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 0.3Ω
Mounting: THT
Case: SIP4
Body dimensions: 21.08x10.16x3.3mm
Insulation voltage: 2.5kV
Turn-on time: 10ms
Turn-off time: 5ms
Kind of output: MOSFET
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
MDNA360UB2200PTED MDNA360UB2200PTED.pdf
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: E2-Pack
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 135A
Pulsed collector current: 280A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
товару немає в наявності
В кошику  од. на суму  грн.
MDNA210UB2200PTED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: E2-Pack
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
товару немає в наявності
В кошику  од. на суму  грн.
MDNA280UB2200PTED
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.7kV; screw
Mechanical mounting: screw
Type of semiconductor module: IGBT
Case: E2-Pack
Semiconductor structure: diode/transistor
Topology: boost chopper; NTC thermistor; three-phase diode bridge
Gate-emitter voltage: ±20V
Collector current: 100A
Pulsed collector current: 200A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
товару немає в наявності
В кошику  од. на суму  грн.
LOC110 pVersion=0046&contRep=ZT&docId=005056AB82531EE995A4BD066FD0D8BF&compId=LOC110.pdf?ci_sign=d2d833749eb568e434c2a264e575cdf87bfe75c6
LOC110
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; THT; OUT: photodiode; 3.75kV; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Insulation voltage: 3.75kV
Kind of output: photodiode
Case: DIP8
на замовлення 363 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
3+173.46 грн
9+114.82 грн
23+108.44 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
PLB150S pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B494F3CC7960C7&compId=PLB150.pdf?ci_sign=e6a835b33cf7bbb6db157533fe16deb901f9ab13
PLB150S
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NC; Icntrl max: 50mA; 250mA; max.250VAC
Manufacturer series: OptoMOS
Case: DIP6
Mounting: SMT
Kind of output: MOSFET
Type of relay: solid state
Contacts configuration: SPST-NC
Operating temperature: -40...85°C
Turn-on time: 1ms
Turn-off time: 2.5ms
On-state resistance: 7Ω
Body dimensions: 8.38x6.35x3.3mm
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 250V AC; max. 250V DC
Relay variant: 1-phase; current source
Insulation voltage: 3.75kV
на замовлення 32 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+520.38 грн
4+275.10 грн
10+259.95 грн
В кошику  од. на суму  грн.
CLA60MT1200NHB pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEF950EA5DBD8BF&compId=CLA60MT1200NHB.pdf?ci_sign=931ed8de95f4a498e58b92338e50a36a33e544fe
CLA60MT1200NHB
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; TO247-3; Igt: 60/80mA; Ifsm: 325A
Kind of package: tube
Case: TO247-3
Mounting: THT
Type of thyristor: triac
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
на замовлення 19 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+565.90 грн
10+357.23 грн
В кошику  од. на суму  грн.
CLA80MT1200NHB pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA7822040C5C200C4&compId=CLA80MT1200NHB.pdf?ci_sign=b7d475d8ebe5374c36b717c8b05ac079131171a7
CLA80MT1200NHB
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 40A; TO247-3; Igt: 70/90mA; Ifsm: 440A
Kind of package: tube
Mounting: THT
Case: TO247-3
Type of thyristor: triac
Gate current: 70/90mA
Max. load current: 40A
Max. forward impulse current: 0.44kA
Max. off-state voltage: 1.2kV
на замовлення 313 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+665.51 грн
10+541.42 грн
30+468.06 грн
В кошику  од. на суму  грн.
CLA60MT1200NHR pVersion=0046&contRep=ZT&docId=005056AB90B41ED9BCFAF1199F33C0C4&compId=CLA60MT1200NHR.pdf?ci_sign=667c2802955af27425e185a40228badc5bc85a18
CLA60MT1200NHR
Виробник: IXYS
Category: Triacs
Description: Triac; 1.2kV; 30A; ISO247™; Igt: 60/80mA; Ifsm: 325A
Kind of package: tube
Case: ISO247™
Mounting: THT
Type of thyristor: triac
Gate current: 60/80mA
Max. load current: 30A
Max. forward impulse current: 325A
Max. off-state voltage: 1.2kV
на замовлення 45 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+834.68 грн
3+683.36 грн
10+613.99 грн
30+590.86 грн
В кошику  од. на суму  грн.
IXGH24N170 pVersion=0046&contRep=ZT&docId=005056AB82531ED99DAF3D3296E6F820&compId=IXGH(T)24N170.pdf?ci_sign=bcf829c7a280c895f4c01ef3c947f0ab37ed7901
IXGH24N170
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; NPT; 1.7kV; 24A; 250W; TO247-3
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 106nC
Turn-on time: 105ns
Turn-off time: 560ns
Power dissipation: 250W
Collector current: 24A
Pulsed collector current: 150A
Gate-emitter voltage: ±20V
Collector-emitter voltage: 1.7kV
Technology: NPT
Features of semiconductor devices: high voltage
Type of transistor: IGBT
на замовлення 9 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1088.00 грн
3+955.27 грн
В кошику  од. на суму  грн.
IXFP26N50P3 pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AFB180D4E852E143&compId=IXFH26N50P3.pdf?ci_sign=96ca4b01122992fdeaebf66ee18c5319168d1131
IXFP26N50P3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 26A; 500W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 26A
Power dissipation: 500W
Case: TO220AB
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 260 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+582.21 грн
10+480.82 грн
50+422.61 грн
100+396.30 грн
250+368.39 грн
В кошику  од. на суму  грн.
CPC1705Y pVersion=0046&contRep=ZT&docId=005056AB90B41EDAA8B492F147DD40C7&compId=CPC1705y.pdf?ci_sign=9a0e8e0330114c6075c230c6290a49adb090967b
CPC1705Y
Виробник: IXYS
Category: DC Solid State Relays
Description: Relay: solid state; 3250mA; max.60VDC; THT; SOP4; OptoMOS; 0.09Ω
Type of relay: solid state
Max. operating current: 3.25A
Switched voltage: max. 60V DC
Mounting: THT
Case: SOP4
Relay variant: current source
Manufacturer series: OptoMOS
Body dimensions: 21.08x10.16x3.3mm
Turn-on time: 2ms
Turn-off time: 12ms
Contacts configuration: SPST-NC
On-state resistance: 90mΩ
Control current max.: 50mA
Kind of output: MOSFET
Insulation voltage: 2.5kV
Operating temperature: -40...85°C
товару немає в наявності
В кошику  од. на суму  грн.
FDA217S pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8ADDE49FA04800D5&compId=FDA217.pdf?ci_sign=7af944d323d634b0cf6432ef54580522e3fe231b
FDA217S
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET gate driver; SO8; Ch: 2
Case: SO8
Mounting: SMD
Kind of package: tube
Number of channels: 2
Kind of integrated circuit: MOSFET gate driver
Type of integrated circuit: driver
Operating temperature: -40...85°C
на замовлення 179 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+219.83 грн
3+186.59 грн
5+175.42 грн
10+169.84 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
FMD15-06KC5 pVersion=0046&contRep=ZT&docId=005056AB82531ED9A0F522E6E4505820&compId=FMD15-06KC5.pdf?ci_sign=2f4352c0a860f23fb93ad3877941b2c9bd4b7589
FMD15-06KC5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; HiPerDynFRED; unipolar; 600V; 15A
Type of transistor: N-MOSFET
Technology: CoolMOS™; HiPerDynFRED; Multi-Chip Configurations
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Case: ISOPLUS i4-pac™ x024a
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Semiconductor structure: diode/transistor
Features of semiconductor devices: super junction coolmos
Topology: boost chopper
на замовлення 8 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+1179.02 грн
3+968.02 грн
В кошику  од. на суму  грн.
IXGP48N60A3 pVersion=0046&contRep=ZT&docId=005056AB82531ED99AE53B33B1DDB820&compId=IXGA(P%2CH)48N60A3.pdf?ci_sign=3de66c7eadd74b16b8875cd3a050200178617cff
IXGP48N60A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 48A; 300W; TO220-3
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 600V
Collector current: 48A
Power dissipation: 300W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Turn-on time: 54ns
Turn-off time: 925ns
товару немає в наявності
В кошику  од. на суму  грн.
IXTH1N200P3HV pVersion=0046&contRep=ZT&docId=005056AB82531ED9A4CDCB63FB405820&compId=IXTA(H)1N200P3HV.pdf?ci_sign=deac538022c3e7b6cce7ceee522f5c545d6ce7d6
IXTH1N200P3HV
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 2kV; 1A; 125W; TO247HV; 2.3us
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 2kV
Drain current: 1A
Power dissipation: 125W
Case: TO247HV
On-state resistance: 40Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 2.3µs
товару немає в наявності
В кошику  од. на суму  грн.
LOC112P pVersion=0046&contRep=ZT&docId=005056AB752F1ED3B79ADF4EA9EF01EC&compId=LOC112P.pdf?ci_sign=8cbac573205132593f6f59bb6199ad1903ebb2fb
LOC112P
Виробник: IXYS
Category: Optocouplers - others
Description: Optocoupler; SMD; Ch: 1; OUT: photodiode; 3.75kV; Flatpack 8pin
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Insulation voltage: 3.75kV
Kind of output: photodiode
Case: Flatpack 8pin
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+429.36 грн
В кошику  од. на суму  грн.
IXFH56N30X3 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FBB8D50EDA38BF&compId=IXF_56N30X3.pdf?ci_sign=633f7ff7bbd4d5f73ecc58750c76abed9db4d947 pVersion=0046&contRep=ZT&docId=005056AB82531EE990FC1CCCD2D4B8BF&compId=300VProductBrief.pdf?ci_sign=243527b0db45b2a88c7e85e44a9cf5e3419beb5c
IXFH56N30X3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 300V; 56A; 320W; TO247-3
Mounting: THT
Kind of channel: enhancement
Technology: HiPerFET™; X3-Class
Type of transistor: N-MOSFET
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 56nC
Reverse recovery time: 115ns
On-state resistance: 27mΩ
Gate-source voltage: ±20V
Drain current: 56A
Drain-source voltage: 300V
Power dissipation: 320W
на замовлення 236 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+607.12 грн
10+460.09 грн
В кошику  од. на суму  грн.
Обрати Сторінку:   [  << Попередня Сторінка ]  1 27 54 81 108 135 162 189 216 243 256 257 258 259 260 261 262 263 264 265 266 270 276  [ Наступна Сторінка >> ]