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IXA17IF1200HJ IXA17IF1200HJ IXYS IXA17IF1200HJ.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 47nC
Turn-on time: 110ns
Turn-off time: 350ns
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 100W
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
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IXFH160N15T2 IXFH160N15T2 IXYS IXFH160N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Case: TO247-3
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 253nC
On-state resistance: 9mΩ
Drain current: 160A
Power dissipation: 880W
Drain-source voltage: 150V
Kind of channel: enhancement
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
1+572.34 грн
30+431.76 грн
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IXFK360N15T2 IXFK360N15T2 IXYS IXFK(X)360N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of package: tube
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Kind of channel: enhancement
Gate-source voltage: ±20V
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IXFX360N15T2 IXFX360N15T2 IXYS IXFK(X)360N15T2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Mounting: THT
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of package: tube
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Kind of channel: enhancement
Gate-source voltage: ±20V
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MMIX1H60N150V1 IXYS MMIX1H60N150V1.pdf Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
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MMIX1F360N15T2 IXYS media?resourcetype=datasheets&itemid=D974702A-D102-455F-98DF-8C5F7606CE98&filename=littelfuse-discrete-mosfets-n-channel-trench-gate-mmix1f360n15t2-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4.4mΩ
Drain current: 235A
Power dissipation: 680W
Drain-source voltage: 150V
Pulsed drain current: 900A
Kind of channel: enhancement
Gate-source voltage: ±20V
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IXGP20N120A3 IXGP20N120A3 IXYS IXG_20N120A3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Technology: GenX3™; PT
Turn-on time: 66ns
Turn-off time: 1.53µs
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
1+590.98 грн
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IXGP20N120B3 IXGP20N120B3 IXYS IXGA(P)20N120B3.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Technology: GenX3™; PT
Turn-on time: 61ns
Turn-off time: 720ns
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
1+580.33 грн
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DSS40-0008D DSS40-0008D IXYS DSS40-0008D.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; TO247-3; Ufmax: 0.23V
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 0.23V
Max. forward impulse current: 0.6kA
Kind of package: tube
Power dissipation: 155W
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VUO86-16NO7 VUO86-16NO7 IXYS VUO86-16NO7.pdf Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
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MIXG330PF1200PTSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: X2PT
Max. off-state voltage: 1.2kV
Case: SimBus F
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MIXG330PF1200TSF IXYS Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: X2PT
Max. off-state voltage: 1.2kV
Case: SimBus F
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IXFH54N65X3 IXYS littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh54n65x3-datasheet?assetguid=72e478f6-5b56-48fd-b5ac-2dc7d5bb4639 Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: HiPerFET™; X3-Class
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IXFB60N80P IXFB60N80P IXYS IXFB60N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
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IXFL60N80P IXFL60N80P IXYS IXFL60N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 40A
Power dissipation: 625W
Case: ISOPLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
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DSA240X150NA DSA240X150NA IXYS DSA240X150NA.pdf Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Max. forward voltage: 0.85V
Load current: 120A x2
Max. off-state voltage: 150V
Max. forward impulse current: 1.6kA
Max. load current: 120A
Semiconductor structure: double independent
Type of semiconductor module: diode
Case: SOT227B
Mechanical mounting: screw
Features of semiconductor devices: Schottky
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IX4426N IX4426N IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Number of channels: 2
Output current: -1.5...1.5A
на замовлення 1041 шт:
термін постачання 21-30 дні (днів)
7+67.44 грн
10+45.48 грн
25+40.21 грн
50+39.63 грн
Мінімальне замовлення: 7
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IX4426MTR IX4426MTR IXYS IX4426-27-28.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Number of channels: 2
Output current: -1.5...1.5A
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
7+73.65 грн
10+48.94 грн
25+46.06 грн
Мінімальне замовлення: 7
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IX4426NTR IX4426NTR IXYS littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250 Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
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CPC1972G CPC1972G IXYS CPC1972.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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CPC1972GS CPC1972GS IXYS CPC1972.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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CPC1972GSTR IXYS CPC1972.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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IXTA380N036T4-7 IXTA380N036T4-7 IXYS IXTA380N036T4-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
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CPC1017NTR CPC1017NTR IXYS CPC1017N.pdf Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 60V DC; max. 600V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXFB62N80Q3 IXFB62N80Q3 IXYS IXFB62N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns
Case: PLUS264™
Mounting: THT
Kind of package: tube
Gate charge: 0.27µC
Reverse recovery time: 300ns
On-state resistance: 0.14Ω
Drain current: 62A
Power dissipation: 1.56kW
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+3295.63 грн
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IXFK32N80Q3 IXFK32N80Q3 IXYS IXFK(X)32N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 0.14µC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 1kW
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
1+2038.25 грн
3+1675.13 грн
10+1501.27 грн
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IXFR32N80P IXFR32N80P IXYS IXFR32N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 150nC
On-state resistance: 0.29Ω
Drain current: 20A
Power dissipation: 300W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXFN32N80P IXFN32N80P IXYS IXFN32N80P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A
Case: SOT227B
Gate charge: 150nC
Reverse recovery time: 250ns
On-state resistance: 0.27Ω
Drain current: 29A
Pulsed drain current: 250A
Power dissipation: 625W
Gate-source voltage: ±40V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: HiPerFET™; PolarHV™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
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IXFK32N80P IXFK32N80P IXYS IXFK(X)32N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 150nC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 830W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXFX32N80Q3 IXFX32N80Q3 IXYS IXFK(X)32N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 0.14µC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 1kW
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXFN62N80Q3 IXFN62N80Q3 IXYS IXFN62N80Q3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A
Case: SOT227B
Gate charge: 0.27µC
Reverse recovery time: 300ns
On-state resistance: 0.14Ω
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 960W
Gate-source voltage: ±40V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
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IXFR32N80Q3 IXFR32N80Q3 IXYS IXFR32N80Q3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 500W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 0.14µC
On-state resistance: 0.3Ω
Drain current: 24A
Power dissipation: 500W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXFX32N80P IXFX32N80P IXYS IXFK(X)32N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 150nC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 830W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXFB52N90P IXFB52N90P IXYS IXFB52N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 52A
Gate-source voltage: ±30V
Power dissipation: 1.25kW
Drain-source voltage: 900V
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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IXFN52N90P IXFN52N90P IXYS IXFN52N90P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 43A
Pulsed drain current: 104A
Gate-source voltage: ±40V
Power dissipation: 890W
Drain-source voltage: 900V
Case: SOT227B
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
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IXFH12N90P IXFH12N90P IXYS IXFH(V)12N90P_S.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Polarisation: unipolar
Gate charge: 56nC
On-state resistance: 1Ω
Drain current: 12A
Power dissipation: 380W
Drain-source voltage: 900V
Case: TO247-3
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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IXFK32N90P IXFK32N90P IXYS IXFK(X)32N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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IXFX32N90P IXFX32N90P IXYS IXFK(X)32N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: PLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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IXGR32N90B2D1 IXGR32N90B2D1 IXYS IXGR32N90B2D1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Gate charge: 89nC
Turn-on time: 42ns
Turn-off time: 690ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 160W
Pulsed collector current: 200A
Collector-emitter voltage: 900V
Case: PLUS247™
Technology: HiPerFAST™; PT
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
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IXFR40N90P IXFR40N90P IXYS IXFR40N90P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 230nC
On-state resistance: 0.25Ω
Drain current: 21A
Power dissipation: 300W
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXFH16N80P IXFH16N80P IXYS IXFH16N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXFT16N80P IXFT16N80P IXYS IXFH16N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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IXFN56N90P IXFN56N90P IXYS IXFN56N90P.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
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IXKC19N60C5 IXYS Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Reverse recovery time: 430ns
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IXFH10N80P IXFH10N80P IXYS IXFA(H,P,Q)10N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
на замовлення 261 шт:
термін постачання 21-30 дні (днів)
2+350.50 грн
10+266.97 грн
30+245.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP10N80P IXFP10N80P IXYS IXFA(H,P,Q)10N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
на замовлення 297 шт:
термін постачання 21-30 дні (днів)
2+356.72 грн
50+269.44 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFA10N80P IXFA10N80P IXYS IXFA(H,P,Q)10N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
на замовлення 264 шт:
термін постачання 21-30 дні (днів)
2+319.45 грн
3+263.67 грн
10+204.34 грн
50+190.34 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
MCNA180PD2200YB IXYS PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 180A; Y4-M6; Ufmax: 1.18V; bulk
Max. forward voltage: 1.18V
Load current: 180A
Max. load current: 280A
Max. forward impulse current: 5.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: Y4-M6
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA650PD2200CB IXYS media?resourcetype=datasheets&itemid=CBDA49D5-9FD9-49E5-A455-70AC7F88D31C&filename=Littelfuse-Power-Semiconductors-MCNA650PD2200CB-Datasheet Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 650A; ComPack; Ufmax: 1.16V; bulk
Max. forward voltage: 1.16V
Load current: 650A
Max. forward impulse current: 16kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: ComPack
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA75PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk
Max. forward voltage: 1.21V
Load current: 75A
Max. load current: 118A
Max. forward impulse current: 1.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA120PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk
Max. forward voltage: 1.34V
Load current: 120A
Max. load current: 190A
Max. forward impulse current: 2.2kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA150PD2200YB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 150A; TO240AA; Ufmax: 1.18V; bulk
Max. forward voltage: 1.18V
Load current: 150A
Max. load current: 235A
Max. forward impulse current: 4.3kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA220PD2200YB IXYS PCN241015_Y4-M6 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 220A; Y4-M6; Ufmax: 1.19V; bulk
Max. forward voltage: 1.19V
Load current: 220A
Max. load current: 345A
Max. forward impulse current: 7.2kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: Y4-M6
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA40PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk
Max. forward voltage: 1.29V
Load current: 40A
Max. load current: 63A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA55PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA
Max. forward voltage: 1.2V
Load current: 55A
Max. load current: 86A
Max. forward impulse current: 1kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA95PD2200TB IXYS PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk
Max. forward voltage: 1.24V
Load current: 95A
Max. load current: 149A
Max. forward impulse current: 1.7kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXKH70N60C5 IXKH70N60C5 IXYS IXKH70N60C5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXKT70N60C5 IXKT70N60C5 IXYS IXKT70N60C5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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DFE240X600NA DFE240X600NA IXYS DFE240X600NA.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Reverse recovery time: 35ns
Technology: FRED
Max. forward voltage: 1.2V
Semiconductor structure: double independent
Load current: 120A x2
Max. forward impulse current: 1.2kA
Max. off-state voltage: 0.6kV
Mechanical mounting: screw
Type of semiconductor module: diode
Electrical mounting: screw
Case: SOT227B
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
1+2422.47 грн
В кошику  од. на суму  грн.
DFE250X600NA DFE250X600NA IXYS DFE250X600NA.pdf Category: Diode modules
Description: Module: diode; double independent; 600V; If: 125Ax2; SOT227B; screw
Technology: FRED
Semiconductor structure: double independent
Load current: 125A x2
Max. forward impulse current: 1.2kA
Max. off-state voltage: 0.6kV
Mechanical mounting: screw
Type of semiconductor module: diode
Electrical mounting: screw
Case: SOT227B
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IXA17IF1200HJ IXA17IF1200HJ.pdf
IXA17IF1200HJ
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 18A; 100W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 47nC
Turn-on time: 110ns
Turn-off time: 350ns
Collector current: 18A
Gate-emitter voltage: ±20V
Pulsed collector current: 45A
Power dissipation: 100W
Technology: GenX3™; Planar; Sonic FRD™; XPT™
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
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IXFH160N15T2 IXFH160N15T2.pdf
IXFH160N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 160A; 880W; TO247-3
Case: TO247-3
Mounting: THT
Features of semiconductor devices: thrench gate power mosfet
Polarisation: unipolar
Type of transistor: N-MOSFET
Kind of package: tube
Gate charge: 253nC
On-state resistance: 9mΩ
Drain current: 160A
Power dissipation: 880W
Drain-source voltage: 150V
Kind of channel: enhancement
на замовлення 285 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+572.34 грн
30+431.76 грн
В кошику  од. на суму  грн.
IXFK360N15T2 IXFK(X)360N15T2.pdf
IXFK360N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; TO264
Case: TO264
Mounting: THT
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of package: tube
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Kind of channel: enhancement
Gate-source voltage: ±20V
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IXFX360N15T2 IXFK(X)360N15T2.pdf
IXFX360N15T2
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 360A; 1670W; 150ns
Case: PLUS247™
Mounting: THT
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Kind of package: tube
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4mΩ
Drain current: 360A
Power dissipation: 1.67kW
Drain-source voltage: 150V
Kind of channel: enhancement
Gate-source voltage: ±20V
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MMIX1H60N150V1 MMIX1H60N150V1.pdf
Виробник: IXYS
Category: SMD/THT thyristors
Description: Thyristor; 1.5kV; SMPD; SMD; 32kA
Type of thyristor: thyristor
Max. off-state voltage: 1.5kV
Case: SMPD
Mounting: SMD
Max. forward impulse current: 32kA
Features of semiconductor devices: freewheelling diode; MOS-gated thyristor (MGT)
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MMIX1F360N15T2 media?resourcetype=datasheets&itemid=D974702A-D102-455F-98DF-8C5F7606CE98&filename=littelfuse-discrete-mosfets-n-channel-trench-gate-mmix1f360n15t2-datasheet
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; GigaMOS™; unipolar; 150V; 235A; Idm: 900A
Case: SMPD
Mounting: SMD
Polarisation: unipolar
Type of transistor: N-MOSFET
Technology: GigaMOS™; HiPerFET™; TrenchT2™
Gate charge: 715nC
Reverse recovery time: 150ns
On-state resistance: 4.4mΩ
Drain current: 235A
Power dissipation: 680W
Drain-source voltage: 150V
Pulsed drain current: 900A
Kind of channel: enhancement
Gate-source voltage: ±20V
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IXGP20N120A3 IXG_20N120A3.pdf
IXGP20N120A3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220AB
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220AB
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Technology: GenX3™; PT
Turn-on time: 66ns
Turn-off time: 1.53µs
на замовлення 16 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+590.98 грн
В кошику  од. на суму  грн.
IXGP20N120B3 IXGA(P)20N120B3.pdf
IXGP20N120B3
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 20A; 180W; TO220-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-emitter voltage: ±20V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Technology: GenX3™; PT
Turn-on time: 61ns
Turn-off time: 720ns
на замовлення 37 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+580.33 грн
В кошику  од. на суму  грн.
DSS40-0008D DSS40-0008D.pdf
DSS40-0008D
Виробник: IXYS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 8V; 40A; TO247-3; Ufmax: 0.23V
Type of diode: Schottky rectifying
Case: TO247-3
Mounting: THT
Max. off-state voltage: 8V
Load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 0.23V
Max. forward impulse current: 0.6kA
Kind of package: tube
Power dissipation: 155W
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VUO86-16NO7 VUO86-16NO7.pdf
VUO86-16NO7
Виробник: IXYS
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1.6kV; If: 86A; Ifsm: 550A
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.6kV
Load current: 86A
Max. forward impulse current: 0.55kA
Electrical mounting: THT
Version: module
Max. forward voltage: 1.51V
Leads: wire Ø 1.5mm
Case: ECO-PAC 1
Mechanical mounting: screw
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MIXG330PF1200PTSF
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: X2PT
Max. off-state voltage: 1.2kV
Case: SimBus F
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MIXG330PF1200TSF
Виробник: IXYS
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; SimBus F
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT half-bridge; NTC thermistor
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: X2PT
Max. off-state voltage: 1.2kV
Case: SimBus F
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IXFH54N65X3 littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh54n65x3-datasheet?assetguid=72e478f6-5b56-48fd-b5ac-2dc7d5bb4639
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X3-Class; unipolar; 650V; 54A; Idm: 70A; 625W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 54A
Pulsed drain current: 70A
Power dissipation: 625W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 59mΩ
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 140ns
Technology: HiPerFET™; X3-Class
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IXFB60N80P IXFB60N80P.pdf
IXFB60N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 60A; 1250W; PLUS264™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 60A
Power dissipation: 1.25kW
Case: PLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
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IXFL60N80P IXFL60N80P.pdf
IXFL60N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 40A; 625W; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 40A
Power dissipation: 625W
Case: ISOPLUS264™
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
Technology: HiPerFET™; Polar™
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DSA240X150NA DSA240X150NA.pdf
DSA240X150NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 150V; If: 120Ax2; SOT227B; screw
Electrical mounting: screw
Max. forward voltage: 0.85V
Load current: 120A x2
Max. off-state voltage: 150V
Max. forward impulse current: 1.6kA
Max. load current: 120A
Semiconductor structure: double independent
Type of semiconductor module: diode
Case: SOT227B
Mechanical mounting: screw
Features of semiconductor devices: Schottky
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IX4426N IX4426-27-28.pdf
IX4426N
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: SO8
Supply voltage: 4.5...35V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Kind of output: inverting
Number of channels: 2
Output current: -1.5...1.5A
на замовлення 1041 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+67.44 грн
10+45.48 грн
25+40.21 грн
50+39.63 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IX4426MTR IX4426-27-28.pdf
IX4426MTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; DFN8; -1.5÷1.5A; Ch: 2
Type of integrated circuit: driver
Kind of integrated circuit: low-side; MOSFET gate driver
Case: DFN8
Supply voltage: 4.5...30V
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: inverting
Number of channels: 2
Output current: -1.5...1.5A
на замовлення 2000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
7+73.65 грн
10+48.94 грн
25+46.06 грн
Мінімальне замовлення: 7
В кошику  од. на суму  грн.
IX4426NTR littelfuse-integrated-circuits-ix4426-27-28-datasheet?assetguid=56368590-6fa3-453c-9630-e9feee6f9250
IX4426NTR
Виробник: IXYS
Category: MOSFET/IGBT drivers
Description: IC: driver; low-side,MOSFET gate driver; SO8; -1.5÷1.5A; Ch: 2
Case: SO8
Type of integrated circuit: driver
Mounting: SMD
Kind of integrated circuit: low-side; MOSFET gate driver
Kind of output: inverting
Kind of package: reel; tape
Operating temperature: -40...125°C
Output current: -1.5...1.5A
Number of channels: 2
Supply voltage: 4.5...35V
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CPC1972G CPC1972.pdf
CPC1972G
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: THT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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CPC1972GS CPC1972.pdf
CPC1972GS
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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CPC1972GSTR CPC1972.pdf
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; Icntrl max: 50mA; 250mA; max.800VAC; 1-phase
Type of relay: solid state
Control current max.: 50mA
Max. operating current: 250mA
Switched voltage: max. 800V AC
Relay variant: 1-phase
Mounting: SMT
Case: DIP6
Body dimensions: 8.38x6.35x3.3mm
Switching method: zero voltage switching
Insulation voltage: 3.75kV
Operating temperature: -40...85°C
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IXTA380N036T4-7 IXTA380N036T4-7.pdf
IXTA380N036T4-7
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 36V; 380A; 480W; TO263-7; 54ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 36V
Drain current: 380A
Power dissipation: 480W
Case: TO263-7
On-state resistance: 1mΩ
Mounting: SMD
Gate charge: 260nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 54ns
Features of semiconductor devices: thrench gate power mosfet
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CPC1017NTR CPC1017N.pdf
CPC1017NTR
Виробник: IXYS
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl max: 50mA; 100mA; max.600VAC
Type of relay: solid state
Contacts configuration: SPST-NO
Control current max.: 50mA
Max. operating current: 0.1A
Switched voltage: max. 60V DC; max. 600V AC
Manufacturer series: OptoMOS
Relay variant: 1-phase; current source
On-state resistance: 16Ω
Mounting: SMT
Case: SOP4
Body dimensions: 4.09x3.81x2.03mm
Insulation voltage: 1.5kV
Turn-on time: 10ms
Turn-off time: 10ms
Kind of output: MOSFET
Operating temperature: -40...85°C
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IXFB62N80Q3 IXFB62N80Q3.pdf
IXFB62N80Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Q3-Class; unipolar; 800V; 62A; 1560W; 300ns
Case: PLUS264™
Mounting: THT
Kind of package: tube
Gate charge: 0.27µC
Reverse recovery time: 300ns
On-state resistance: 0.14Ω
Drain current: 62A
Power dissipation: 1.56kW
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+3295.63 грн
В кошику  од. на суму  грн.
IXFK32N80Q3 IXFK(X)32N80Q3.pdf
IXFK32N80Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 0.14µC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 1kW
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
на замовлення 22 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2038.25 грн
3+1675.13 грн
10+1501.27 грн
В кошику  од. на суму  грн.
IXFR32N80P IXFR32N80P.pdf
IXFR32N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 20A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 150nC
On-state resistance: 0.29Ω
Drain current: 20A
Power dissipation: 300W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXFN32N80P IXFN32N80P.pdf
IXFN32N80P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 29A; SOT227B; screw; Idm: 250A
Case: SOT227B
Gate charge: 150nC
Reverse recovery time: 250ns
On-state resistance: 0.27Ω
Drain current: 29A
Pulsed drain current: 250A
Power dissipation: 625W
Gate-source voltage: ±40V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: HiPerFET™; PolarHV™
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
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IXFK32N80P IXFK(X)32N80P.pdf
IXFK32N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; TO264
Case: TO264
Mounting: THT
Kind of package: tube
Gate charge: 150nC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 830W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXFX32N80Q3 IXFK(X)32N80Q3.pdf
IXFX32N80Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 1000W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 0.14µC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 1kW
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXFN62N80Q3 IXFN62N80Q3.pdf
IXFN62N80Q3
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 800V; 49A; SOT227B; screw; Idm: 180A
Case: SOT227B
Gate charge: 0.27µC
Reverse recovery time: 300ns
On-state resistance: 0.14Ω
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 960W
Gate-source voltage: ±40V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: HiPerFET™; Q3-Class
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Polarisation: unipolar
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IXFR32N80Q3 IXFR32N80Q3.pdf
IXFR32N80Q3
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 24A; 500W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 0.14µC
On-state resistance: 0.3Ω
Drain current: 24A
Power dissipation: 500W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXFX32N80P IXFK(X)32N80P.pdf
IXFX32N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 32A; 830W; PLUS247™
Case: PLUS247™
Mounting: THT
Kind of package: tube
Gate charge: 150nC
On-state resistance: 0.27Ω
Drain current: 32A
Power dissipation: 830W
Drain-source voltage: 800V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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IXFB52N90P IXFB52N90P.pdf
IXFB52N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 52A; 1250W; PLUS264™
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 52A
Gate-source voltage: ±30V
Power dissipation: 1.25kW
Drain-source voltage: 900V
Case: PLUS264™
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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IXFN52N90P IXFN52N90P.pdf
IXFN52N90P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 43A; SOT227B; screw; Idm: 104A
Polarisation: unipolar
Gate charge: 308nC
Reverse recovery time: 300ns
On-state resistance: 0.16Ω
Drain current: 43A
Pulsed drain current: 104A
Gate-source voltage: ±40V
Power dissipation: 890W
Drain-source voltage: 900V
Case: SOT227B
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of semiconductor module: MOSFET transistor
Electrical mounting: screw
Mechanical mounting: screw
Semiconductor structure: single transistor
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IXFH12N90P IXFH(V)12N90P_S.pdf
IXFH12N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 900V; 12A; 380W; TO247-3
Polarisation: unipolar
Gate charge: 56nC
On-state resistance: 1Ω
Drain current: 12A
Power dissipation: 380W
Drain-source voltage: 900V
Case: TO247-3
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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IXFK32N90P IXFK(X)32N90P.pdf
IXFK32N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; TO264
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: TO264
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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IXFX32N90P IXFK(X)32N90P.pdf
IXFX32N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 32A; 960W; PLUS247™
Polarisation: unipolar
Gate charge: 215nC
On-state resistance: 0.3Ω
Drain current: 32A
Power dissipation: 960W
Drain-source voltage: 900V
Case: PLUS247™
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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IXGR32N90B2D1 IXGR32N90B2D1.pdf
IXGR32N90B2D1
Виробник: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; HiPerFAST™; 900V; 22A; 160W; PLUS247™
Gate charge: 89nC
Turn-on time: 42ns
Turn-off time: 690ns
Gate-emitter voltage: ±20V
Collector current: 22A
Power dissipation: 160W
Pulsed collector current: 200A
Collector-emitter voltage: 900V
Case: PLUS247™
Technology: HiPerFAST™; PT
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
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IXFR40N90P IXFR40N90P.pdf
IXFR40N90P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 21A; 300W; ISOPLUS247™
Case: ISOPLUS247™
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate charge: 230nC
On-state resistance: 0.25Ω
Drain current: 21A
Power dissipation: 300W
Drain-source voltage: 900V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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IXFH16N80P IXFH16N80P.pdf
IXFH16N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 800V; 16A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 250ns
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IXFT16N80P IXFH16N80P.pdf
IXFT16N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 16A; 460W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 16A
Power dissipation: 460W
Case: TO268
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
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IXFN56N90P IXFN56N90P.pdf
IXFN56N90P
Виробник: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 900V; 56A; SOT227B; screw; Idm: 168A
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 56A
Pulsed drain current: 168A
Power dissipation: 1kW
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 0.145Ω
Gate charge: 375nC
Kind of channel: enhancement
Reverse recovery time: 300ns
Semiconductor structure: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Type of semiconductor module: MOSFET transistor
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IXKC19N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Reverse recovery time: 430ns
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IXFH10N80P IXFA(H,P,Q)10N80P.pdf
IXFH10N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
на замовлення 261 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+350.50 грн
10+266.97 грн
30+245.54 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFP10N80P IXFA(H,P,Q)10N80P.pdf
IXFP10N80P
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; 300W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
на замовлення 297 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+356.72 грн
50+269.44 грн
Мінімальне замовлення: 2
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IXFA10N80P IXFA(H,P,Q)10N80P.pdf
IXFA10N80P
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
на замовлення 264 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
2+319.45 грн
3+263.67 грн
10+204.34 грн
50+190.34 грн
Мінімальне замовлення: 2
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MCNA180PD2200YB PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 180A; Y4-M6; Ufmax: 1.18V; bulk
Max. forward voltage: 1.18V
Load current: 180A
Max. load current: 280A
Max. forward impulse current: 5.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: Y4-M6
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA650PD2200CB media?resourcetype=datasheets&itemid=CBDA49D5-9FD9-49E5-A455-70AC7F88D31C&filename=Littelfuse-Power-Semiconductors-MCNA650PD2200CB-Datasheet
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 650A; ComPack; Ufmax: 1.16V; bulk
Max. forward voltage: 1.16V
Load current: 650A
Max. forward impulse current: 16kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: ComPack
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
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MCNA75PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 75A; TO240AA; Ufmax: 1.21V; bulk
Max. forward voltage: 1.21V
Load current: 75A
Max. load current: 118A
Max. forward impulse current: 1.4kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA120PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 120A; TO240AA; Ufmax: 1.34V; bulk
Max. forward voltage: 1.34V
Load current: 120A
Max. load current: 190A
Max. forward impulse current: 2.2kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA150PD2200YB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 150A; TO240AA; Ufmax: 1.18V; bulk
Max. forward voltage: 1.18V
Load current: 150A
Max. load current: 235A
Max. forward impulse current: 4.3kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA220PD2200YB PCN241015_Y4-M6 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 220A; Y4-M6; Ufmax: 1.19V; bulk
Max. forward voltage: 1.19V
Load current: 220A
Max. load current: 345A
Max. forward impulse current: 7.2kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: Y4-M6
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA40PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 40A; TO240AA; Ufmax: 1.29V; bulk
Max. forward voltage: 1.29V
Load current: 40A
Max. load current: 63A
Max. forward impulse current: 0.5kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA55PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 55A; TO240AA; Ufmax: 1.2V; Ifsm: 1kA
Max. forward voltage: 1.2V
Load current: 55A
Max. load current: 86A
Max. forward impulse current: 1kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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MCNA95PD2200TB PCN210930_TO240 screw.pdf PCN210915_TO240 screw.pdf
Виробник: IXYS
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 2.2kV; 95A; TO240AA; Ufmax: 1.24V; bulk
Max. forward voltage: 1.24V
Load current: 95A
Max. load current: 149A
Max. forward impulse current: 1.7kA
Max. off-state voltage: 2.2kV
Kind of package: bulk
Case: TO240AA
Type of semiconductor module: diode-thyristor
Semiconductor structure: double series
Electrical mounting: FASTON connectors; screw
Features of semiconductor devices: Kelvin terminal
Mechanical mounting: screw
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IXKH70N60C5 IXKH70N60C5.pdf
IXKH70N60C5
Виробник: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 70A
Power dissipation: 625W
Case: TO247-3
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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IXKT70N60C5 IXKT70N60C5.pdf
IXKT70N60C5
Виробник: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 66A; 540W; TO268
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Power dissipation: 540W
Case: TO268
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: super junction coolmos
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DFE240X600NA DFE240X600NA.pdf
DFE240X600NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 120Ax2; SOT227B; screw
Reverse recovery time: 35ns
Technology: FRED
Max. forward voltage: 1.2V
Semiconductor structure: double independent
Load current: 120A x2
Max. forward impulse current: 1.2kA
Max. off-state voltage: 0.6kV
Mechanical mounting: screw
Type of semiconductor module: diode
Electrical mounting: screw
Case: SOT227B
на замовлення 1 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна
1+2422.47 грн
В кошику  од. на суму  грн.
DFE250X600NA DFE250X600NA.pdf
DFE250X600NA
Виробник: IXYS
Category: Diode modules
Description: Module: diode; double independent; 600V; If: 125Ax2; SOT227B; screw
Technology: FRED
Semiconductor structure: double independent
Load current: 125A x2
Max. forward impulse current: 1.2kA
Max. off-state voltage: 0.6kV
Mechanical mounting: screw
Type of semiconductor module: diode
Electrical mounting: screw
Case: SOT227B
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